Semiconductor processing waste gas treatment device

Abstract

The utility model relates to a semiconductor process waste gas treatment device which comprises a burner, a flame generating device, a first gas inlet device, a purging device and a second gas inlet device, the combustor is provided with a combustion cavity, the first air inlet device and the purging device are arranged on the two sides of the combustor, the first air inlet device inputs waste gas into the combustion cavity, the purging device blows the waste gas input into the combustor, and the second air inlet device is arranged on the combustor and inputs air into the combustion cavity. The flame generating device is arranged on the burner, and a first gas outlet of the first gas inlet device is obliquely arranged towards a high-temperature area of flame of the flame generating device. According to the semiconductor manufacturing process waste gas treatment device, the gas inlet direction of an existing machine table is changed from a side inlet mode to a bias inlet mode, namely, waste gas input through the first gas inlet device is aligned to the lower middle portion of flame, namely the high-temperature area of the flame, the input waste gas makes direct contact with the high-temperature area of the flame, sufficient combustion of the waste gas can be guaranteed, and the service life of the waste gas is prolonged. The waste gas treatment efficiency of the machine table can also be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor waste gas treatment device, specifically, relates to a semiconductor process waste gas treatment device. BACKGROUND

[0002] Semiconductor manufacturing will use many process gases, and powder will be generated in the waste gas combustion treatment process, which will adhere to the gas inlet pipeline and block the gas inlet pipeline, thereby causing the machine table gas inlet pressure to be too high.

[0003] On the other hand, the powder carried by the waste gas will also accumulate in the chamber, blocking the effective area of the high-temperature flame combustion, thereby affecting the processing temperature inside the combustion chamber.

[0004] However, the current semiconductor waste gas treatment device does not have a powder purging device for the gas inlet pipeline, and the powder is easily blocked in the gas inlet pipeline and the chamber. In addition, the chamber gas inlet pipeline is side-close type, and when the input waste gas flow is large, the airflow will blow to the flame root, causing the flame to shift, affecting the normal combustion of the flame, and there is no temperature monitoring for the combustion chamber, thereby affecting the normal operation of the machine table. SUMMARY

[0005] The utility model aims at providing a semiconductor process waste gas treatment device, which can avoid the technical problem of flame shift caused by direct blowing to the flame root when the waste gas flow is large, thereby affecting the normal combustion of the flame.

[0006] The embodiment of the utility model is implemented as follows:

[0007] The semiconductor process waste gas treatment device of the embodiment comprises a burner, a flame generating device, a first gas inlet device, a purging device and a second gas inlet device. The inside of the burner is provided with a combustion chamber. The first gas inlet device and the purging device are respectively arranged on the two sides of the burner. The first gas inlet device is used for inputting waste gas into the inside of the combustion chamber. The purging device is used for blowing the waste gas input into the inside of the burner to remove the powder carried by the waste gas. The second gas inlet device is arranged on the burner and is used for inputting air into the inside of the combustion chamber. The flame generating device is arranged on the burner and is used for igniting the waste gas in the inside of the combustion chamber. The first gas outlet of the first gas inlet device is inclinedly arranged towards the high-temperature area of the flame of the flame generating device.

[0008] In a possible implementation, the combustion cavity comprises a first combustion sub-cavity and a second combustion sub-cavity in communication, the first combustion sub-cavity has a larger volume than the second combustion sub-cavity; the flame of the flame generating device and the first gas outlet are located in the first combustion sub-cavity respectively, and the second gas outlet of the second air inlet device is located in the second combustion sub-cavity.

[0009] In a possible implementation, the exhaust gas treatment device further comprises a temperature sensor and a control device, the temperature sensor is electrically connected with the control device; the second combustion sub-cavity is in the shape of a truncated cone, and the inner diameter of the second combustion sub-cavity gradually increases in the direction away from the flame generating device; the temperature sensor is arranged at the largest inner diameter of the second combustion sub-cavity, and is used to collect the temperature at the position; the control device receives the temperature information collected by the temperature sensor, and is used to adjust the input amount of exhaust gas of the first air inlet device, the flame temperature of the flame generating device, the input amount of air of the second air inlet device, and the purging mode and frequency of the purging device based on the temperature information.

[0010] In a possible implementation, the purging device comprises a nitrogen gas input pipeline, a gas conveying pipeline and a nitrogen gas source; the nitrogen gas input pipeline is arranged in the gas inlet of the gas conveying pipeline, the third gas outlet of the gas conveying pipeline is located in the first combustion sub-cavity; the nitrogen gas inlet of the nitrogen gas input pipeline is connected with the nitrogen gas source, and the nitrogen gas outlet is arranged on the side of the nitrogen gas input pipeline.

[0011] In a possible implementation, the third gas outlet and the first gas outlet are arranged at an included angle.

[0012] In a possible implementation, the purging mode of the purging device at least comprises a long purging mode and an intermittent purging mode, and the purging device is further provided with a purging frequency matched with the input exhaust gas flow of the first air inlet device.

[0013] In a possible implementation, the nitrogen gas input pipeline is coaxially arranged with the gas inlet of the input pipeline, and a gap is arranged between the nitrogen gas input pipeline and the gas inlet; the nitrogen gas outlet is arranged in multiple and arranged at equal angles along the outer circumferential wall of the nitrogen gas input pipeline.

[0014] In a possible implementation, the temperature sensor comprises a temperature probe and a temperature feedback line; the temperature probe is arranged at the largest inner diameter of the second combustion sub-cavity, and is used to collect the temperature at the position; the temperature probe is electrically connected with the control device through the temperature feedback line.

[0015] In a possible implementation, the temperature sensor is arranged in multiple and arranged at equal angles along the outer circumferential of the second combustion sub-cavity.

[0016] The semiconductor process waste gas treatment device has the advantages that the semiconductor process waste gas treatment device changes the air inlet direction of the current machine table from a side-in type to a partial-in type, that is, the waste gas input by the first air inlet device is aligned with the middle and lower parts of the flame, that is, the high-temperature zone of the flame, so that the input waste gas directly contacts the high-temperature zone of the flame, which can not only ensure sufficient combustion of the waste gas, but also improve the waste gas treatment efficiency of the machine table. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly introduced as follows, and it should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope, and for those skilled in the art, other related drawings can also be obtained without creative labor on the basis of the drawings.

[0018] Figure 1 FIG. 1 is a whole structure diagram of a semiconductor process waste gas treatment device according to an embodiment of the present application;

[0019] Figure 2 FIG. 2 is a layout diagram of a first air inlet device and a blowing device of a semiconductor process waste gas treatment device according to an embodiment of the present application;

[0020] Figure 3 FIG. 3 is a perspective view of a blowing device of a semiconductor process waste gas treatment device according to an embodiment of the present application;

[0021] Figure 4 FIG. 4 is an exploded view of a blowing device of a semiconductor process waste gas treatment device according to an embodiment of the present application;

[0022] Figure 5 FIG. 5 is a layout diagram of a temperature sensor of a semiconductor process waste gas treatment device according to an embodiment of the present application.

[0023] FIG. 1 is a whole structure diagram of a semiconductor process waste gas treatment device according to an embodiment of the present application; DETAILED DESCRIPTION

[0024] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application.

[0026] It should be noted that: similar reference numbers and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0027] In the description of the present application, it should be noted that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, or the orientations or positional relationships commonly placed when the product of the present application is used, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third", etc. are only used for differentiation in description, and cannot be understood as indicating or implying relative importance.

[0028] In addition, the terms "horizontal", "vertical", etc. do not mean that the components must be absolutely horizontal or vertical, but can be slightly inclined. For example, "horizontal" only means that its direction is relatively more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0029] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set", "mount", "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication inside two elements. For those of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0030] Considering that the existing equipment uses a side-entry method for exhaust gas intake, meaning the exhaust gas flow directly blows towards the root of the flame 21 in the flame generator 2, when the input exhaust gas flow rate is large, the flame 21 in the flame generator 2 will deviate significantly, affecting the normal combustion of the flame 21 and resulting in incomplete combustion of the exhaust gas. The semiconductor process exhaust gas treatment device of this application changes the current equipment's air intake direction from side-entry to offset-entry, meaning the input exhaust gas is aimed at the lower middle part of the flame 21 (i.e., the high-temperature zone of the flame 21), allowing the input exhaust gas to directly contact the high-temperature zone of the flame 21. This not only ensures complete combustion of the exhaust gas but also improves the equipment's exhaust gas treatment efficiency.

[0031] The semiconductor process exhaust gas treatment device of this application embodiment includes a burner 1, a flame generating device 2, a first air intake device 3, a purging device 4, and a second air intake device 5. The burner 1 has a combustion chamber inside. The first air intake device 3 and the purging device 4 are respectively arranged opposite to each other on both sides of the burner 1. The first air intake device 3 is used to input exhaust gas into the combustion chamber, and the purging device 4 is used to blow the exhaust gas into the burner 1 to remove the powder carried by the exhaust gas. The second air intake device 5 is arranged on the burner 1 and is used to input air into the combustion chamber. The flame generating device 2 is arranged on the burner 1 to ignite the exhaust gas inside the combustion chamber, and the first air outlet of the first air intake device 3 is inclined toward the high-temperature zone of the flame 21 of the flame generating device 2.

[0032] In conjunction with the above embodiments, such as Figure 1 As shown, the burner 1 is arranged vertically and has a combustion chamber inside. A flame generating device 2 is installed on top of the burner 1, used to generate a flame 21 inside the combustion chamber. A first air intake device 3 and a purging device 4 are installed on the left and right sides of the burner 1, respectively, and introduce the waste gas to be treated and nitrogen into the combustion chamber. A second air intake device 5 is installed at the bottom of the burner 1 to introduce air. The waste gas from the first air intake device 3 and the air from the second air intake device 5 mix inside the combustion chamber. The mixed gas is burned by the flame 21 generated by the burner 1. Dust generated during combustion is purged by nitrogen introduced by the purging device 4, preventing dust accumulation in the first air intake device 3 and inside the combustion chamber. Furthermore, the first outlet of the first air intake device 3 is inclined downwards towards the lower middle part of the flame 21, allowing the input waste gas to directly contact the high-temperature zone of the flame 21. This avoids severe flame 21 deviation when the waste gas input flow is large, and ensures complete combustion of the waste gas, improving the combustion efficiency of the machine.

[0033] The semiconductor process waste gas treatment device of this application embodiment includes a combustion chamber comprising a first combustion sub-chamber 11 and a second combustion sub-chamber 12 connected together. The volume of the first combustion sub-chamber 11 is larger than that of the second combustion sub-chamber 12. The flame of the flame generating device 2 and the first gas outlet are respectively located in the first combustion sub-chamber 11, and the second gas outlet of the second gas inlet device 5 is located in the second combustion sub-chamber 12.

[0034] In conjunction with the above embodiments, such as Figure 1 As shown, the combustion chamber includes a first combustion sub-chamber 11 and a second combustion sub-chamber 12, which are arranged vertically and connected. The first combustion sub-chamber 11 can be cylindrical, and the second combustion sub-chamber 12 can be truncated conical. The first and second combustion sub-chambers 11 and 12 are coaxially arranged. The flame 21 of the flame generating device 2 and the first air outlet of the first air intake device 3 are located in the first combustion sub-chamber 11, and the second air outlet of the second air intake device 5 is located in the second combustion sub-chamber 12. The input exhaust gas and air mix inside the first combustion sub-chamber 11 and are ignited by the flame 21 of the flame generating device 2. The temperature is concentrated inside the first combustion sub-chamber 11, making it a high-temperature concentration zone, which is beneficial for the complete combustion of the subsequently input exhaust gas. Since the volume of the second combustion chamber 12 is smaller than that of the first combustion chamber 11, and the temperature of the second combustion chamber 12 is lower than that of the first combustion chamber 11, the fully combusted gas is sent into the water washing area through the second combustion chamber 12, thereby ensuring the smooth flow of gas (including exhaust gas and air) and thus improving the combustion efficiency.

[0035] The semiconductor process exhaust gas treatment apparatus of this application embodiment further includes a temperature sensor 6 and a control device. The temperature sensor 6 is electrically connected to the control device. The second combustion sub-cavity 12 is a truncated cone shape, and the inner diameter of the second combustion sub-cavity 12 gradually increases along the direction away from the flame generating device 2. The temperature sensor 6 is located at the maximum inner diameter of the second combustion sub-cavity 12 and is used to collect the temperature at that location. The control device receives the temperature information collected by the temperature sensor 6 and is used to adjust the exhaust gas input of the first air intake device 3, the flame temperature of the flame generating device 2, the air input of the second air intake device 5, and the purging mode and purging frequency of the purging device 4 based on the temperature information.

[0036] In conjunction with the above embodiments, such as Figure 1 and Figure 5As shown, the temperature at the bottom of the second combustion sub-cavity 12 will maintain a dynamic balance, for example, will be stably maintained at a certain temperature value or temperature range, when the exhaust gas inside the burner 1 is normally combusted. When the combustion of the exhaust gas inside the combustion cavity is greatly affected due to various reasons, such as too large input flow of the exhaust gas, too low temperature of the flame 21 of the flame generating device 2, too large nitrogen purging amount, or too large input amount of air, etc., the temperature balance inside the second combustion sub-cavity 12 is destroyed, and the temperature information collected by the temperature sensor 6 changes. The control device adjusts different combustion strategies in time according to the temperature information collected by the temperature sensor 6, for example, uses different flow rates of the exhaust gas, air, changes the flame temperature of the flame generating device 2, or changes the purging mode or purging frequency of the nitrogen, etc., so as to ensure the full combustion of the exhaust gas inside the combustion cavity.

[0037] Further, the temperature sensor 6 can be provided as two, and the two temperature sensors 6 are symmetrically arranged on the two sides of the second combustion sub-cavity 12, so as to improve the accuracy of collecting the temperature of the second combustion sub-cavity 12, and at the same time, avoid that the failure of a certain temperature sensor 6 leads to the failure of temperature collection, and increase the fault tolerance of temperature collection. Each temperature sensor 6 can include a temperature probe 61 and a temperature feedback line 62, the temperature probe 61 is installed on the two sides of the second combustion sub-cavity 12 and extends into the inside of the second combustion sub-cavity 12, and each temperature probe 61 is electrically connected to the control device through the corresponding temperature feedback line 62, so as to transmit the collected temperature information to the control device in real time.

[0038] The semiconductor process exhaust gas treatment device provided by the embodiment of the present application, the purging device 4 includes a nitrogen input pipeline 41, a gas conveying pipeline 42 and a nitrogen source; the nitrogen input pipeline 41 is arranged in the gas inlet of the gas conveying pipeline 42, and the third gas outlet of the gas conveying pipeline 42 is located in the first combustion sub-cavity 11; the nitrogen inlet 412 of the nitrogen input pipeline 41 is connected with the nitrogen source, and the peripheral side of the nitrogen input pipeline 41 is provided with a nitrogen outlet 411.

[0039] In combination with the above embodiment, as shown in the figure, Figures 1 to 4 The nitrogen source is connected with the nitrogen input pipeline 41, and is used for blowing nitrogen into the inside of the combustion cavity through the nitrogen input pipeline 41. The nitrogen is input through the nitrogen inlet 411 of the nitrogen input pipeline 41, and the nitrogen input pipeline 41 is provided with six nitrogen outlets 412 on the peripheral side wall thereof, so that the nitrogen is uniformly blown from top to bottom through the six nitrogen outlets 412 to purify the exhaust gas, and the dust carried by the exhaust gas is better removed. According to the actual process, the nitrogen can also be set as long blowing or intermittent blowing, when the dust carried by the exhaust gas is less or the input flow of the exhaust gas is less, the intermittent blowing mode is adopted, which to a certain extent plays a role in energy saving.

[0040] As shown in the figure, Figure 1 and Figure 2As shown, the semiconductor process waste gas treatment device of the embodiment of the application is characterized in that the third gas outlet and the first gas outlet are arranged at an angle. The first gas outlet and the third gas outlet are symmetrically arranged on both sides of the burner, which can not only blow away the dust in the waste gas, but also straighten the flame 21, to a certain extent, to compensate for the deviation of the flame 21 caused by the input of the waste gas.

[0041] In summary, the semiconductor process waste gas treatment device of the application changes the current machine intake direction from side-in to bias-in, that is, the input waste gas is aligned with the middle and lower parts of the flame 21, that is, the high-temperature zone of the flame 21, so that the input waste gas directly contacts the high-temperature zone of the flame 21, which not only ensures the sufficient combustion of the waste gas, but also improves the waste gas treatment efficiency of the machine. In addition, the combustion chamber is divided into a first combustion sub-cavity 11 and a second combustion sub-cavity 12, the input waste gas and air are mixed in the first combustion sub-cavity 11 and ignited and burned by the flame 21 of the flame generating device 2, and the temperature is concentrated in the first combustion sub-cavity 11, so that the first combustion sub-cavity 11 is a high-temperature concentration area, which is beneficial to the subsequent sufficient combustion of the input waste gas. Since the volume of the second combustion sub-cavity 12 is smaller than that of the first combustion sub-cavity 11, the temperature of the second combustion sub-cavity 12 is lower than that of the first combustion sub-cavity 11, and the fully combusted gas is sent into the water washing area through the second combustion sub-cavity 12, so as to ensure the smooth flow of the gas (including waste gas and air), thereby improving the combustion efficiency. The blowing device 4 can also be set as long blowing or intermittent blowing according to the actual process. When the waste gas carries less dust or the input flow of the waste gas is less, the intermittent blowing mode is adopted, which plays a certain role in energy saving.

[0042] The above only describes the preferred embodiments of the application and is not intended to limit the application. For those skilled in the art, the application can be variously changed and modified. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the application shall be included in the protection scope of the application.

Claims

1. A semiconductor process exhaust gas treatment apparatus characterized by comprising: The waste gas treatment device comprises a burner, a flame generating device, a first air inlet device, a blowing device and a second air inlet device; the burner is internally provided with a combustion chamber; the first air inlet device and the blowing device are oppositely arranged on two sides of the burner respectively; the first air inlet device is used for inputting waste gas into the interior of the combustion chamber; the blowing device is used for blowing the waste gas input into the interior of the burner to remove the powder carried by the waste gas; the second air inlet device is arranged on the burner and is used for inputting air into the interior of the combustion chamber; the flame generating device is arranged on the burner and is used for igniting the waste gas in the interior of the combustion chamber; and the first air outlet of the first air inlet device is obliquely arranged towards the high-temperature area of the flame of the flame generating device.

2. The semiconductor process exhaust gas treatment apparatus according to claim 1, wherein The combustion chamber comprises a first combustion sub-chamber and a second combustion sub-chamber which are communicated; the volume of the first combustion sub-chamber is greater than that of the second combustion sub-chamber; the flame of the flame generating device and the first air outlet are located in the first combustion sub-chamber respectively; and the second air outlet of the second air inlet device is located in the second combustion sub-chamber.

3. The semiconductor process exhaust gas treatment apparatus according to claim 2, wherein The waste gas treatment device further comprises a temperature sensor and a control device; the temperature sensor is electrically connected with the control device; the second combustion sub-chamber is in the shape of a truncated cone; the inner diameter of the second combustion sub-chamber gradually increases in the direction away from the flame generating device; the temperature sensor is arranged at the maximum inner diameter of the second combustion sub-chamber and is used for collecting the temperature at the position; the control device receives the temperature information collected by the temperature sensor and is used for adjusting the waste gas input amount of the first air inlet device, the flame temperature of the flame generating device, the air input amount of the second air inlet device and the blowing mode and blowing frequency of the blowing device based on the temperature information.

4. The semiconductor process exhaust treatment apparatus of claim 2, wherein The blowing device comprises a nitrogen input pipeline, a gas conveying pipeline and a nitrogen source; the nitrogen input pipeline is arranged in the air inlet of the gas conveying pipeline; the third air outlet of the gas conveying pipeline is located in the first combustion sub-chamber; the nitrogen inlet of the nitrogen input pipeline is connected with the nitrogen source; and the nitrogen output is arranged on the circumferential side of the nitrogen input pipeline.

5. The semiconductor process exhaust gas treatment apparatus according to claim 4, wherein The third air outlet and the first air outlet are arranged at an included angle.

6. The semiconductor process exhaust gas treatment apparatus according to claim 4, wherein The blowing mode of the blowing device at least comprises a long blowing mode and an intermittent blowing mode; the blowing device is further provided with a blowing frequency which matches the waste gas input flow of the first air inlet device.

7. The semiconductor process exhaust treatment apparatus of claim 6, wherein The nitrogen input pipeline is coaxially arranged with the air inlet of the input pipeline and a set gap is arranged between the two; the nitrogen output is arranged in multiple and is arranged at equal angles along the outer circumferential wall of the nitrogen input pipeline.

8. The semiconductor process exhaust treatment apparatus of claim 3, wherein The temperature sensor comprises a temperature probe and a temperature feedback line; the temperature probe is arranged at the maximum inner diameter of the second combustion sub-chamber and is used for collecting the temperature at the position; and the temperature probe is electrically connected with the control device through the temperature feedback line.

9. The semiconductor process exhaust gas treatment apparatus according to claim 8, wherein The temperature sensor is arranged in multiple and is arranged at equal angles along the outer circumferential side of the second combustion sub-chamber.

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