Air inlet equipment for semiconductor processing equipment
By designing components such as the mixing pipe and flow guide sleeve in the gas inlet equipment, the problem of uneven distribution of process gas components was solved, achieving uniform mixing of process gases and improving the uniformity and stability of semiconductor processing.
Patent Information
- Application Number
- CN202520359801.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-04
- Publication Date
- 2026-02-17
- Estimated Expiration
- 2035-03-04
AI Technical Summary
In existing gas inlet devices, the process gas components are not fully mixed during silicon carbide epitaxial growth, resulting in uneven component distribution within the process chamber, which affects the reaction efficiency at different locations on the substrate and consequently affects process uniformity.
An air intake device was designed, which includes components such as an air intake pipe, a gas mixing pipe, a gas mixing fan blade, a flow guide sleeve, a motor, gears, a gear ring, and an air intake plate. Through the cooperation of these components, the process gas is fully mixed and evenly distributed, ensuring that the reaction efficiency is consistent at different locations on the substrate.
This achieves uniform mixing of process gases, improves process uniformity, and ensures the stability and consistency of semiconductor processing.
Smart Images

Figure CN223921630U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of air intake equipment technology, specifically an air intake device for semiconductor processing equipment. Background Technology
[0002] Epitaxial growth refers to the growth of a single-crystal layer with the same crystal orientation as the substrate on a single-crystal substrate. Compared with the growth environment of silicon epitaxy, the process environment of silicon carbide epitaxy has a higher temperature, typically reaching 1500℃ to 1800℃, and a longer growth cycle. Currently, chemical vapor deposition (CVD) is mainly used for the growth of silicon carbide epitaxial layers. In epitaxial growth, the control of the gas flow field is an important factor affecting the uniformity of the process. Existing gas inlet devices are used to output process gases containing multiple gas components into the process chamber. If the process gases are not sufficiently mixed before entering, it will easily lead to uneven distribution of process gas components in the process chamber, resulting in different reaction efficiencies at different locations on the substrate, thus affecting the uniformity of the process. To address this, we propose a gas inlet device for semiconductor processing equipment. Utility Model Content
[0003] In view of the above situation and to overcome the defects of the prior art, this utility model provides an air intake device for semiconductor processing equipment, which effectively solves the problem that the process gas entering without sufficient mixing will easily lead to uneven distribution of process gas components in the process chamber, resulting in different reaction efficiencies at different locations on the substrate, and thus affecting process uniformity.
[0004] To achieve the above objectives, this utility model provides the following technical solution: an air intake device for semiconductor processing equipment, comprising an air intake pipe, a mixing pipe at the bottom end of the air intake pipe, mixing fan blades on the inner wall of the mixing pipe, a guide sleeve on the bottom wall of the inner cavity of the mixing pipe, air outlets evenly distributed on the lower side of the outer wall of the guide sleeve, a motor on the right side wall of the air intake pipe, a gear at the output end of the motor, a toothed ring on the outer wall of the mixing pipe meshing with the gear, and an air intake plate at the bottom end of the mixing pipe, with air distribution ports evenly distributed on the bottom wall of the air intake plate.
[0005] Preferably, the top wall of the flow guide sleeve is tapered, and the top wall of the flow guide sleeve is uniformly provided with turbulence rods.
[0006] Preferably, the bottom wall of the inner cavity of the flow guide sleeve is provided with a return tube, and the return tube is located in the inner cavity of the flow guide sleeve.
[0007] Preferably, the top wall of the air intake disc cavity is inclined, and the number of air distribution ports gradually increases from the inside to the outside.
[0008] Preferably, the outer wall of the air intake disc is provided with a support frame, which is disposed on the outer wall of the air intake pipe.
[0009] Compared with the prior art, the beneficial effects of this utility model are:
[0010] 1. The gas inlet device for semiconductor processing equipment, by setting up gas inlet pipe, gas mixing pipe and gas mixing fan blades, etc., can facilitate the mixing of process gases with multiple gas components, avoid uneven distribution of process gas components in the process chamber, make the reaction efficiency of different positions of the substrate consistent, and promote the uniformity of the process.
[0011] 2. The gas inlet device for semiconductor processing equipment, by setting up a flow guide sleeve, a flow swerve, and a gas mixing pipe, can facilitate the turbulence mixing of process gases, making the mixing of process gases of various gas components more uniform and improving the mixing efficiency of the device.
[0012] 3. The air intake device for semiconductor processing equipment, by setting up a guide sleeve, a deflector tube and a mixing roller, can improve the uniformity of air pressure in the inner cavity of the air intake plate, so that the exhaust velocity at the air distribution port is consistent, and the time for the gas to reach the semiconductor processing area is consistent, which is conducive to uniform semiconductor processing. Attached Figure Description
[0013] The accompanying drawings are provided to further understand the present invention and form part of the specification. They are used together with the embodiments of the present invention to explain the present invention and do not constitute a limitation thereof.
[0014] In the attached diagram:
[0015] Figure 1 This is a schematic diagram of the air intake device for semiconductor processing equipment according to this utility model;
[0016] Figure 2 This is a cross-sectional view of the mixing pipe of this utility model;
[0017] Figure 3 This is a schematic diagram of the structure of the spoiler rod of this utility model;
[0018] In the diagram: 100, intake pipe; 101, mixing pipe; 102, mixing fan blade; 103, guide sleeve; 104, motor; 105, gear; 106, gear ring; 107, intake disc; 108, spoiler bar; 109, deflector pipe; 110, support frame. Detailed Implementation
[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the protection scope of the present utility model.
[0020] Depend on Figure 1 , Figure 2 and Figure 3 This invention discloses an air intake device for semiconductor processing equipment. An air intake pipe 100 has a mixing pipe 101 rotatably connected to its bottom end. The mixing pipe 101 facilitates the rotation of a mixing fan blade 102. The mixing fan blade 102 is fixedly connected to the inner wall of the mixing pipe 101, facilitating gas mixing. A guide sleeve 103 is fixedly connected to the bottom wall of the inner cavity of the mixing pipe 101, facilitating gas flow. Air outlets are evenly distributed on the lower side of the outer wall of the guide sleeve 103, facilitating gas flow. The air intake pipe 100… A motor 104 is fixedly connected to the right side wall, which drives the gear 105 to rotate. The output end of the motor 104 is fixedly connected to the gear 105, which drives the gear ring 106 to rotate. The outer wall of the mixing pipe 101 is fixedly connected to the gear ring 106, which drives the mixing pipe 101 to rotate. The gear ring 106 meshes with the gear 105. The bottom end of the mixing pipe 101 is rotatably connected to the air inlet plate 107, which facilitates the introduction of process gas into the processing cavity. The bottom wall of the air inlet plate 107 is evenly provided with air distribution ports.
[0021] In this embodiment: a process gas containing multiple gas components is delivered to the inner cavity of the inlet pipe 100. The process gas is then introduced into the mixing pipe 101 through the inlet pipe 100. The motor 104 drives the gear 105 to rotate, which in turn drives the gear ring 106 to rotate. The gear ring 106 then drives the mixing pipe 101 to rotate, which in turn drives the mixing fan blade 102 to rotate. The rotating mixing fan blade 102 mixes the incoming process gas. The mixed gas flows along the outer wall of the guide sleeve 103 and enters the outlet. It is then injected into the inner cavity of the guide sleeve 103 through the outlet and exits through the mixing pipe 101 into the inlet plate 107. The gas is then injected into the interior of the cavity for processing through the gas distribution port on the inlet plate 107. This allows the device to easily mix the incoming process gas containing multiple gas components, avoiding uneven distribution of process gas components in the process chamber, ensuring consistent reaction efficiency at different locations on the substrate, and promoting process uniformity.
[0022] The top wall of the guide sleeve 103 is tapered, and the top wall of the guide sleeve 103 is uniformly fixed with turbulence rods 108, which facilitate the turbulence mixing of the gas.
[0023] In this embodiment, the conical shape facilitates gas flow guidance. The gas mixing pipe 101 drives the flow guide sleeve 103 to rotate, and the flow guide sleeve 103 drives the flow turbulence rod 108 to rotate. The flow turbulence rod 108 turbulentizes the gas flow, which makes it easier for the device to turbulently mix the process gas, making the mixing of process gas with multiple gas components more uniform and improving the mixing efficiency of the device.
[0024] A return pipe 109 is fixedly connected to the bottom wall of the inner cavity of the guide sleeve 103. The return pipe 109 facilitates the return and guidance of gas flow. The return pipe 109 is located in the inner cavity of the guide sleeve 103.
[0025] In this embodiment, the reversing tube 109 facilitates the obstruction and guidance of the mixed gas, causing the gas flow direction to reverse, reducing the flow impact of the gas, and at the same time facilitating the bending and mixing of the gas flow, thereby improving the mixing efficiency of the device.
[0026] The top wall of the inner cavity of the air intake disc 107 is inclined, and the number of air distribution ports gradually increases from the inside to the outside.
[0027] In this embodiment, the top wall of the inner cavity of the air intake plate 107 is inclined, which reduces the size of the outer space of the inner cavity of the air intake plate 107. The size of the inner cavity of the air intake plate 107 is adapted to the amount of gas introduced, which improves the uniformity of the air pressure in the inner cavity of the air intake plate 107, makes the flow rate consistent when the gas is exhausted from the air distribution port, and makes the time for the gas to reach the semiconductor processing area consistent, which is conducive to uniform semiconductor processing.
[0028] A support frame 110 is fixedly connected to the outer wall of the air intake plate 107. The support frame 110 facilitates the support connection between the air intake plate 107 and the air intake pipe 100. The support frame 110 is located on the outer wall of the air intake pipe 100.
[0029] In this embodiment: the air intake plate 107 facilitates the support frame 110, and the support frame 110 facilitates the support of the air intake pipe 100, preventing the air intake plate 107 from deflecting. During installation, the air intake plate 107 is installed on the top wall of the processing chamber, which is beneficial to the stability of the air intake device.
Claims
1. A gas inlet apparatus for a semiconductor processing apparatus, comprising a gas inlet tube (100), characterized in that: The bottom end of the air inlet pipe (100) is provided with a gas mixing pipe (101), the inner wall of the gas mixing pipe (101) is provided with a gas mixing fan blade (102), the bottom wall of the inner cavity of the gas mixing pipe (101) is provided with a flow guide sleeve (103), the lower side of the outer wall of the flow guide sleeve (103) is uniformly provided with an air outlet, the right side wall of the air inlet pipe (100) is provided with a motor (104), the output end of the motor (104) is provided with a gear (105), the outer wall of the gas mixing pipe (101) is provided with a gear ring (106), the gear ring (106) is engaged with the gear (105), the bottom end of the gas mixing pipe (101) is provided with an air inlet disc (107), and the bottom wall of the air inlet disc (107) is uniformly provided with an air distribution port.
2. The gas inlet apparatus for a semiconductor processing apparatus according to claim 1, wherein: The top wall of the flow guide sleeve (103) is conical, and the top wall of the flow guide sleeve (103) is uniformly provided with a spoiler rod (108).
3. The gas inlet apparatus for a semiconductor processing apparatus according to claim 1, wherein: The bottom wall of the inner cavity of the flow guide sleeve (103) is provided with a turn-back pipe (109), and the turn-back pipe (109) is located in the inner cavity of the flow guide sleeve (103).
4. The gas inlet apparatus for a semiconductor processing apparatus according to Claim 1, wherein: The top wall of the inner cavity of the air inlet disc (107) is inclined, and the number of holes from inside to outside of the air distribution port gradually increases.
5. The gas inlet apparatus for a semiconductor processing apparatus according to Claim 1, wherein: The outer wall of the air inlet disc (107) is provided with a support frame (110), and the support frame (110) is arranged on the outer wall of the air inlet pipe (100).