Electrothermal treatment device for semiconductor process waste gas

Abstract

The utility model discloses a semiconductor process waste gas electro-thermal treatment device which comprises an outer cylinder, an inner cylinder and a middle cylinder, the inner side of the inner cylinder is provided with a first channel, a gap between the middle cylinder and the inner cylinder forms a second channel, and a gap between the outer cylinder and the middle cylinder forms a third channel. The first channel, the second channel and the third channel form an end-to-end roundabout airflow path; a plurality of heating plates are arranged in the first channel and used for heating gas passing through the first channel, a plurality of splitter plates distributed at intervals along a gas flow path are arranged in the second channel, and a plurality of splitter through holes are formed in the splitter plates. The utility model is beneficial for solving the problems that as a preheating device is not arranged in front of the combustion chamber, the temperature in the combustion chamber fluctuates due to relatively low-temperature gas input from the front side of the combustion chamber, the stable and continuous combustion state of the gas in the combustion chamber is influenced, and few waste gas components are difficult to fully burn due to the influence of temperature difference fluctuation; and an escape phenomenon occurs.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor waste gas treatment technology, and in particular to an electrothermal treatment device for semiconductor process waste gas. Background Technology

[0002] Semiconductors are materials whose electrical conductivity at room temperature falls between that of conductors and insulators. From both a technological and economic development perspective, semiconductors are of paramount importance. Most electronic products, such as computers, mobile phones, and digital recorders, rely heavily on semiconductors as their core components.

[0003] In existing technologies, some semiconductor manufacturing processes use axial flow fans to send exhaust gases and combustible auxiliary gases into the combustion chamber. The fans create vortices in the exhaust gases and combustible gases, facilitating uniform mixing with air. However, often without a preheating device before the combustion chamber, the temperature of the mixed gas is low upon entering. During actual operation, the fluctuating airflow, coupled with the relatively low temperature of the incoming gas, causes temperature fluctuations within the combustion chamber. This not only affects the stable and continuous combustion of the gases but also makes it easy for some exhaust gas components to escape due to incomplete combustion caused by temperature fluctuations. Utility Model Content

[0004] This invention provides an electrothermal treatment device for semiconductor process waste gas, which helps to solve the problem that some current semiconductor process waste gas combustion treatment processes do not have a preheating device before the combustion chamber, resulting in a low temperature when the mixed gas first enters the combustion chamber. In actual operation, due to the fluctuating airflow, the temperature inside the combustion chamber often fluctuates due to the relatively low temperature gas input from the front of the combustion chamber. This not only affects the stable and continuous combustion state of the gas inside the combustion chamber, but also makes it easy for a small amount of waste gas components to be difficult to burn completely due to the temperature difference fluctuation, resulting in escape.

[0005] This utility model is implemented as follows:

[0006] An electrothermal treatment device for semiconductor process waste gas includes an outer cylinder with an inlet pipe and an outlet pipe at its axial ends. The outer cylinder contains an inner cylinder and a middle cylinder arranged radially at intervals. The axial cross-sectional profiles of the inner and middle cylinders are U-shaped. The closed ends of the inner and middle cylinders face the outlet pipe and overlap. The inner cylinder has a first channel on its inner side. The gap between the middle and inner cylinders forms a second channel, and the gap between the outer and middle cylinders forms a third channel. The input end of the first channel, located on the opening side of the inner cylinder, is connected to the inlet pipe, and the output end of the third channel is connected to the outlet pipe. The first, second, and third channels form a meandering airflow path. The first channel contains several heating plates, with the radially outer ends of the heating plates connected to the inner wall of the inner cylinder and the radially inner ends of the heating plates being free ends. The heating plates are equipped with electric heating wires for heating the gas passing through the first channel. The second channel contains several flow dividers arranged at intervals along the airflow path, with several flow-diverting holes on the flow dividers.

[0007] Based on the above technical solution, several heating plates are arranged in a centrally symmetrical manner relative to the axial center line of the inner cylinder.

[0008] Based on the above technical solution, the heating plate includes a first side plate and a second side plate located on both sides, and the electric heating wire is disposed between the first side plate and the second side plate. The first side plate and the second side plate are made of thermally conductive material.

[0009] Based on the above technical solution, the third channel is provided with helical guide vanes.

[0010] Based on the above technical solution, the inner cylinder and the middle cylinder are connected to each other at the closed end by a sealing plate.

[0011] Based on the above technical solution, a detachable connection structure is provided between the sealing plate and the inner cylinder and the middle cylinder.

[0012] Based on the above technical solution, the inner cylinder and the middle cylinder are made of thermally conductive material, and the outer cylinder is provided with a heat insulation layer structure on the outside.

[0013] Based on the above technical solution, a conical transition structure is provided at the connection between the air outlet pipe and the outer cylinder.

[0014] Compared with the prior art, the present invention has at least the following advantages:

[0015] 1. This utility model uses an outer cylinder, an inner cylinder, and a middle cylinder to form a meandering airflow path, which increases the gas residence time and thus the heating cycle. A heating plate is installed in the first channel to preheat the gas passing through it. The multi-stage preheating structure (heating plate + meandering path) gradually increases the temperature of the exhaust gas, avoiding direct impact of low-temperature gas on the combustion zone, increasing the temperature of the exhaust gas before it enters the combustion chamber, reducing temperature fluctuations in the combustion chamber, and ensuring stable combustion of the exhaust gas.

[0016] 2. This utility model sets up a flow divider in the second channel to guide the airflow to be evenly distributed, thereby increasing the degree of interaction and mixing of the gas during the flow process, improving the uniformity of gas heating, increasing the heat exchange area between the airflow and the heating plate, and improving the preheating effect. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is an axial cross-sectional view of a semiconductor process waste gas electrothermal treatment device in one embodiment;

[0019] Figure 2 for Figure 1 Schematic diagram of the external structure of the electrothermal treatment device for waste gas from semiconductor manufacturing processes;

[0020] Figure 3 for Figure 2 Radial cross-sectional view of a semiconductor manufacturing waste gas electrothermal treatment device;

[0021] Figure 4 for Figure 3 A simplified diagram of the internal structure of the heating plate.

[0022] Figure 5 for Figure 4 A partial structural diagram of the middle splitter;

[0023] Figure 6 This is a schematic diagram showing the airflow passing through the splitter plate.

[0024] The diagram is labeled as follows: 100, outer cylinder; 110, air inlet pipe; 120, air outlet pipe; 130, spiral guide vane; 200, inner cylinder; 210, heating plate; 211, first side plate; 212, filler; 213, second side plate; 214, electric heating wire; 220, sealing plate; 230, first perforation; 300, middle cylinder; 310, flow divider plate; 311, flow divider hole; 320, second perforation; a, first channel; b, second channel; c, third channel. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Therefore, the following detailed description of the embodiments of this utility model provided in the accompanying drawings is not intended to limit the scope of the claimed utility model, but merely to represent selected embodiments of this utility model.

[0026] In the description of this utility model, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0027] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the element or there may be an intervening element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0028] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0029] Combination Figures 1 to 6 This embodiment discloses a semiconductor process waste gas electrothermal treatment device, which aims to increase the temperature of the waste gas before it enters the combustion chamber through preheating treatment, reduce temperature fluctuations in the combustion chamber, ensure stable combustion of the waste gas, and reduce incomplete combustion and escape of waste gas components caused by temperature fluctuations.

[0030] Among them, such as Figure 1 As shown, the semiconductor process waste gas electrothermal treatment device specifically includes an outer cylinder 100, which serves as the main structure of the entire device. An inlet pipe 110 and an outlet pipe 120 are respectively installed at both ends of the outer cylinder 100 for the input and output of waste gas. The inlet pipe 110 is connected to external waste gas and combustible gas pipelines, and the outlet pipe 120 is connected to the input end of an external burner. The material of the outer cylinder 100 should possess sufficient strength and corrosion resistance to ensure the stability and reliability of the device during long-term use.

[0031] The outer cylinder 100 has an inner cylinder 200 and a middle cylinder 300 arranged radially at intervals inside. The axial cross-sectional profiles of the inner cylinder 200 and the middle cylinder 300 are U-shaped, and their closed ends face the outlet pipe 120 and are arranged to overlap. The inner side of the inner cylinder 200 forms a first channel a, the gap between the middle cylinder 300 and the inner cylinder 200 forms a second channel b, and the gap between the outer cylinder 100 and the middle cylinder 300 forms a third channel c. The first channel a, located at the inlet end of the inner cylinder 200 at the opening, is connected to the air inlet pipe 110. The outlet end of the third channel c is connected to the air outlet pipe 120. Several centrally symmetrically distributed first perforations 230 are provided on the side wall of the first channel a away from the opening, connecting the end of the first channel a to the inlet end of the second channel b. Several centrally symmetrically distributed second perforations 320 are provided on the side wall of the end of the second channel b, connecting the end of the second channel b to the inlet end of the third channel c, thus forming a meandering airflow path. The airflow direction is as follows: Figure 1 As indicated by the arrow, this increases the gas residence time, which in turn increases the heating cycle.

[0032] Furthermore, in combination Figure 1 and Figure 3 Six heating plates 210 are centrally symmetrically distributed within the first channel a. Each heating plate 210 is a long, strip-shaped structure with its long side parallel to the axial direction of the first channel a. The outer radial ends of the heating plates 210 are connected to the inner wall of the inner cylinder 200, while the inner radial ends are free. This structure ensures unobstructed flow in the core area of ​​the first channel a, guaranteeing stable gas flow. The surrounding heating plates 210 provide uniform heating for preheating the gas. Furthermore, the number and distribution of the heating plates 210 should be rationally designed based on the waste gas flow rate and preheating requirements to achieve the optimal preheating effect.

[0033] The heating plate 210 is equipped with an electric heating wire 214 for heating the gas passing through the first channel a. Combined with... Figure 4The heating plate 210 includes a first side plate 211 and a second side plate 213 located on both sides. An electric heating wire 214 is disposed between the first side plate 211 and the second side plate 213. The first side plate 211 and the second side plate 213 are made of thermally conductive material to quickly transfer the heat generated by the electric heating wire 214 to the flowing gas. A filler 212 is also provided between the first side plate 211 and the second side plate 213. The filler 212 is used to fill the gap and provide suitable adhesion, making the structure of the electric heating wire 214 more stable and reliable. In this embodiment, the filler 212 is made of modified high-temperature resistant epoxy resin.

[0034] Four flow dividers 310 are spaced apart along the airflow path within the second channel b. Each flow divider 310 has several flow-diverting holes 311. Figure 1 , Figure 5 and Figure 6 When the airflow passes through each of the flow dividers 310, it is blocked by the main body of the flow divider 310 and needs to pass through the smaller gaps in the flow divider holes 311. This effectively divides and disperses the gas. Multiple flow dividers 310 work together to form a gas mixing mechanism, which guides the airflow to be evenly distributed in the second channel b. At the same time, it has a certain slowing effect on the airflow, increases the heat exchange efficiency between the airflow and the outer wall of the inner cylinder 200, and improves the preheating effect. The material of the flow dividers 310 should have a certain strength and corrosion resistance to ensure its stability and reliability during use.

[0035] In addition, a spiral guide vane 130 is provided in the third channel c. The radially outer end of the spiral guide vane 130 is fixedly connected to the inner wall of the outer cylinder 100 to guide the airflow in a spiral flow within the third channel c, further increasing the interaction between different areas of the airflow, making the gas more evenly heated, and improving the preheating effect. At the same time, the spiral guide vane 130 also plays a role in stabilizing the airflow and reducing the impact of airflow fluctuations on the temperature inside the combustion chamber. A conical transition structure is provided at the connection between the exhaust pipe 120 and the outer cylinder 100 to guide the airflow to smoothly transition to the exhaust pipe 120, reducing airflow resistance and improving the overall performance of the device. The material and shape of the spiral guide vane 130 should be rationally designed according to the airflow characteristics and preheating requirements to achieve the best preheating effect.

[0036] The inner cylinder 200 and the middle cylinder 300 are connected to each other at the closed end by a sealing plate 220. The sealing plate 220 has a detachable connection structure with the inner cylinder 200 and the middle cylinder 300, specifically consisting of bolts and flanges (shown in the simplified diagram). This connection, along with the maintenance holes (not shown) on the side wall of the outer cylinder 100, facilitates maintenance and cleaning of the device. The inner cylinder 200 and the middle cylinder 300 are made of thermally conductive materials (such as copper or stainless steel) to improve heat transfer efficiency. The outer cylinder 100 has an insulation layer structure on its outer side, specifically using insulation cotton, to reduce heat loss and improve preheating efficiency.

[0037] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A semiconductor manufacturing process waste gas electrothermal treatment device, characterized in that, The system includes an outer cylinder with an inlet pipe and an outlet pipe at its axial ends. Inside the outer cylinder are radially spaced inner and middle cylinders, with the axial cross-sectional profiles of the inner and middle cylinders forming a "U" shape. The closed ends of the inner and middle cylinders face the outlet pipe and overlap. The inner cylinder has a first channel, the gap between the middle and inner cylinders forms a second channel, and the gap between the outer and middle cylinders forms a third channel. The input end of the first channel, located on the opening side of the inner cylinder, is connected to the inlet pipe, and the output end of the third channel is connected to the outlet pipe. The first, second, and third channels form a meandering airflow path. The first channel contains several heating plates, with the radially outer ends of the heating plates connected to the inner wall of the inner cylinder and the radially inner ends of the heating plates being free ends. The heating plates are equipped with electric heating wires for heating the gas passing through the first channel. The second channel contains several flow dividers distributed at intervals along the airflow path, with several flow-diverting holes on the flow dividers.

2. The semiconductor process waste gas electrothermal treatment device according to claim 1, characterized in that, Several heating plates are arranged in a centrally symmetrical manner relative to the axial center line of the inner cylinder.

3. The semiconductor process waste gas electrothermal treatment device according to claim 2, characterized in that, The heating plate includes a first side plate and a second side plate located on both sides, and the electric heating wire is disposed between the first side plate and the second side plate. The first side plate and the second side plate are made of thermally conductive material.

4. The semiconductor process waste gas electrothermal treatment device according to claim 1, characterized in that, The third channel is equipped with helical guide vanes.

5. The semiconductor process waste gas electrothermal treatment device according to claim 1, characterized in that, The inner cylinder and the middle cylinder are connected to each other at the closed end by a sealing plate.

6. The semiconductor manufacturing process waste gas electrothermal treatment device according to claim 5, characterized in that, The sealing plate is provided with a detachable connection structure between itself and the inner cylinder and the middle cylinder.

7. The semiconductor process waste gas electrothermal treatment device according to claim 1, characterized in that, The inner and middle cylinders are made of thermally conductive material, and the outer cylinder has an insulation layer structure on its outer side.

8. The semiconductor process waste gas electrothermal treatment device according to claim 4, characterized in that, A conical transition structure is provided at the connection between the air outlet pipe and the outer cylinder.

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