IGBT bidirectional switch module

Abstract

An IGBT bidirectional switch module disclosed by the present invention comprises a heat dissipation plate, a conductive sheet, one or more chip sets, a CLIP structure, signal terminals and power supply terminals, the signal terminals comprise first to fourth signal terminals, the power supply terminals comprise first to third power supply terminals, the chip sets are welded on the conductive sheet and comprise first and second IGBT chips, first and second diode chips, and the first and second diode chips are welded on the conductive sheet. The CLIP structure is a copper conducting strip and is welded on the electrode, the power supply terminal, the signal terminal and the conducting strip of the chipset through solder paste, the first diode chip, the second diode chip and the corresponding IGBT chips form a follow current loop, the first signal terminal and the second signal terminal are electrically connected with the G poles of the first IGBT chip and the second IGBT chip, the third signal terminal and the fourth signal terminal are electrically connected with the E poles of the first IGBT chip and the second IGBT chip, and the third signal terminal and the fourth signal terminal are electrically connected with the E poles of the first IGBT chip and the second IGBT chip. The first power supply terminal and the second power supply terminal are electrically connected with C poles of the first IGBT chip and the second IGBT chip, and the third power supply terminal is electrically connected with E poles of the first IGBT chip and the second IGBT chip. Compared with the prior art, the LED lamp has a good heat dissipation effect and can bear higher current.

Description

Technical Field

[0001] This invention relates to semiconductor modules, and more particularly to IGBT bidirectional switching modules. Background Technology

[0002] An IGBT (Insulated Gate Bipolar Transistor) is a composite, fully controllable, voltage-driven power semiconductor device composed of a bipolar junction transistor (BJT) and an insulated gate field-effect transistor (MOS). It combines the high input impedance of a MOSFET with the low on-state voltage drop of a giant transistor (GTR). An IGBT module is a component that integrates one or more IGBT transistors, a freewheeling diode, and protection and control circuitry into a compact, insulated package. IGBT modules are key components in power electronics for high-voltage and high-current applications, widely used in industrial, automotive, and renewable energy sectors.

[0003] When IGBT modules are used for switching control, they can rapidly switch high currents and high voltages, enabling precise control of power flow in the system. Especially when used for bidirectional switching, two IGBTs need to be connected back-to-back in series, one for forward current and the other for reverse current. A freewheeling diode is connected in anti-parallel within the IGBT module to provide a path for the reverse current. Bidirectional switching has important applications in electric vehicles and other power electronic systems, such as: battery charging management: allowing current to flow bidirectionally during charging and discharging; inverters and motor drives: enabling regenerative braking and energy recovery in motor drives; and power exchange and energy feedback systems: enabling bidirectional control of the power supply.

[0004] However, since the bidirectional switch of the IGBT module can only conduct one set of IGBT modules in sequence, the heat dissipation pressure is relatively large. The current needs to work through the conducted IGBT module, and the heat generation is relatively concentrated, resulting in a relatively large heat dissipation pressure.

[0005] Therefore, there is an urgent need for an IGBT bidirectional switching module that can solve the above problems. Summary of the Invention

[0006] The purpose of this invention is to provide an IGBT bidirectional switching module with good heat dissipation and the ability to withstand higher currents.

[0007] To achieve the above objectives, the present invention provides an IGBT bidirectional switching module, comprising a heat sink, one or more switching units, multiple signal terminals, and multiple power terminals. Each switching unit includes a conductive sheet disposed on the heat sink, one or more chipsets, and a CLIP structure. The signal terminals include a first signal terminal, a second signal terminal, a third signal terminal, and a fourth signal terminal. The power terminals include a first power terminal, a second power terminal, and a third power terminal. The chipsets are soldered onto the conductive sheet. Each chipset includes a first IGBT chip, a first diode chip, a second IGBT chip, and a second diode chip. The CLIP structure is a copper conductive sheet soldered to the electrodes, power terminals, and signal terminals of the chipset using solder paste. The first diode chip is electrically connected to the emitter (E) and collector (C) terminals of the first IGBT chip to form a freewheeling circuit. The second diode chip is electrically connected to the emitter (E) and collector (C) terminals of the second IGBT chip to form a freewheeling circuit. The first and second signal terminals are electrically connected to the gate (G) terminals of the first and second IGBT chips, respectively. The third and fourth signal terminals are electrically connected to the emitter (E) terminals of the first and second IGBT chips, respectively. The first and second power supply terminals are electrically connected to the collector (C) terminals of the first and second IGBT chips, respectively. The third power supply terminal is also electrically connected to the emitter (E) terminals of both the first and second IGBT chips.

[0008] Preferably, the conductive sheet includes a first conductive unit and a second conductive unit. The first conductive unit includes a first conductive sheet, a second conductive sheet, and a third conductive sheet arranged sequentially along a first direction. The second conductive unit has a fourth conductive sheet, a fifth conductive sheet, and a sixth conductive sheet arranged symmetrically with respect to the first conductive unit along the first direction. The first IGBT chip and the first diode chip are arranged along the first direction and soldered onto the second conductive sheet. The second IGBT chip and the second diode chip are arranged along the first direction and soldered onto the fifth conductive sheet. The CLIP structure includes a first CLIP component, a second CLIP component, a third CLIP component, and a fourth CLIP component. The first CLIP component is electrically connected to the emitter (E) terminal of the first IGBT chip, the anode of the first diode chip, and the third conductive sheet. The second CLIP component is electrically connected to the gate (G) terminal of the first IGBT chip and the first conductive sheet. The third CLIP component is electrically connected to the emitter (E) terminal of the second IGBT chip, the anode of the second diode chip, and the fourth conductive sheet. The fourth CLIP component is electrically connected to the gate (G) terminal of the second IGBT chip and the sixth conductive sheet.

[0009] Specifically, the CLIP structure further includes a bridging CLIP component, which electrically connects the third conductive sheet and the fourth conductive sheet.

[0010] Specifically, the number of the first IGBT chip and the second IGBT chip are the same and they are positioned opposite each other in the first direction, and the number of the bridging CLIP is the same as the number of the first IGBT chip and they are positioned opposite each other in the first direction.

[0011] Specifically, the second conductive sheet has a welding area for welding a first power terminal, the fifth conductive sheet has a welding area for welding a second power terminal, and the third or fourth conductive sheet has a welding area for welding a third power terminal.

[0012] More preferably, each of the chipsets has two first IGBT chips, two first diode chips, two second IGBT chips, and two second diode chips. The gate spacing of the two first IGBT chips is opposite to each other, and the gate spacing of the two second IGBT chips is opposite to each other. Each second CLIP includes a first solder portion soldered to the first conductive sheet, two second solder portions soldered to the gates of the two first IGBT chips respectively, and a T-shaped connection portion connecting the first solder portion and the two second solder portions. Each fourth CLIP includes a first solder portion soldered to the sixth conductive sheet, two second solder portions soldered to the gates of the two second IGBT chips respectively, and a T-shaped connection portion connecting the first solder portion and the two second solder portions.

[0013] Preferably, there are multiple switching units, which are arranged side by side along a second direction, the first direction being perpendicular to the second direction, and the signal terminals and power terminals of the multiple switching units are shared.

[0014] Preferably, the conductive sheet further includes a plurality of conductive strips located around the first conductive unit and the second conductive unit, and the CLIP structure includes a first bridging member electrically connecting the conductive strips to the first conductive unit, a second bridging member electrically connecting the conductive strips to the soldering area of ​​the signal terminal, and a third bridging member electrically connecting the two conductive strips.

[0015] Preferably, the first bridging member and the third bridging member each include two welded portions and a connecting strip located between the two welded portions, wherein the middle of the connecting strip protrudes outward in a transverse direction to form an extension area.

[0016] Preferably, the signal terminal is located on one side of the switching unit, and the power terminal is soldered to the conductive sheet of the switching unit.

[0017] Compared with the prior art, in this invention, the first and second signal terminals are electrically connected to the gate (G) terminals of the first and second IGBT chips, respectively, and the third and fourth signal terminals are electrically connected to the emitter (E) terminals of the first and second IGBT chips, respectively. This allows the emitter and gate terminals of the IGBT chips in each IGBT unit group (the first group includes a first IGBT chip and a first diode chip, and the second group includes a second IGBT chip and a second diode chip) to output signal terminals that are connected to independent control signal input terminals, facilitating the switching control of the two groups of IGBT units. Furthermore, this invention uses a cup structure with copper connecting pieces soldered onto the electrodes, power terminals, signal terminals, and conductive plates of the chipset, thereby electrically connecting the electrodes, power terminals, signal terminals, and conductive plates together. This results in better heat dissipation, effectively increases the area through which current flows during operation, reduces connection resistance, and allows the IGBT bidirectional switching module to withstand higher currents. On the other hand, the CLIP structure is soldered to the electrodes, power terminals, signal terminals, and conductive sheets of the chipset using solder paste, resulting in high connection stability and stronger stress resistance. Attached Figure Description

[0018] Figure 1 This is a perspective view of the IGBT bidirectional switching module of this utility model.

[0019] Figure 2 This is an exploded view of the IGBT bidirectional switching module of this utility model.

[0020] Figure 3 This is a partial structural diagram of the IGBT bidirectional switching module of this utility model.

[0021] Figure 4 This is a structural diagram of the first bridging component and the third bridging component of this utility model.

[0022] Figure 5 This is a circuit diagram of one of the smallest units in the IGBT bidirectional switching module of this utility model. Detailed Implementation

[0023] To illustrate the technical content, structural features, objectives, and effects of the present invention in detail, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0024] refer to Figures 1 to 3 The present invention provides an IGBT bidirectional switching module, including a housing 10, a heat sink 13 installed in the housing 10, one or more switching units, and multiple signal terminals and multiple power terminals installed on the housing 10.

[0025] refer to Figure 2 The housing 10 includes a bottom shell 11 and an upper cover mounted on the bottom shell 11.

[0026] Each of the switching units includes a conductive sheet laid on the heat sink 13, one or more chipsets, and a CLIP structure.

[0027] The signal terminals include a first signal terminal 24, a second signal terminal 25, a third signal terminal 26, and a fourth signal terminal 27, and the power terminals include a first power terminal 21, a second power terminal 22, and a third power terminal 23.

[0028] The chipset is soldered onto the conductive sheet, and each chipset includes a first IGBT chip 51, a first diode chip 52, a second IGBT chip 53, and a second diode chip 54.

[0029] The CLIP structure is a copper conductive sheet soldered to the electrodes, power terminals, signal terminals, and conductive sheet of the chipset using solder paste. The first diode chip 52 is electrically connected between the emitter (E) and collector (C) terminals of the first IGBT chip 51, forming a freewheeling circuit. The second diode chip 54 is electrically connected between the emitter (E) and collector (C) terminals of the second IGBT chip 53, also forming a freewheeling circuit. The first signal terminal 24 and the second signal terminal 25 are electrically connected to the gate (G) terminals of the first IGBT chip 51 and the second IGBT chip 53, respectively, via the CLIP structure. The third signal terminal 26 and the fourth signal terminal 27 are electrically connected to the emitters (E) terminals of the first IGBT chip 51 and the second IGBT chip 53, respectively. The first power terminal 21 and the second power terminal 22 are electrically connected to the collector (C) terminals of the first IGBT chip 51 and the second IGBT chip 53, respectively. The third power terminal 23 is simultaneously connected to the emitters (E) terminals of both the first IGBT chip 51 and the second IGBT chip 53.

[0030] refer to Figure 2 and Figure 3 The conductive sheet includes a first conductive unit and a second conductive unit. The first conductive unit includes a first conductive sheet 41, a second conductive sheet 42, and a third conductive sheet 43 arranged sequentially along a first direction. The second conductive unit includes a fourth conductive sheet 44, a fifth conductive sheet 45, and a sixth conductive sheet 46 arranged symmetrically with respect to the first conductive unit along the first direction. The first IGBT chip 51 and the first diode chip 52 are arranged along the first direction and soldered onto the second conductive sheet 42. The second IGBT chip 53 and the second diode chip 54 are arranged along the first direction and soldered onto the fifth conductive sheet 45.

[0031] The CLIP structure includes a first CLIP 61, a second CLIP 62, a third CLIP 63, and a fourth CLIP 64. The first CLIP 61 is electrically connected to the emitter (E) of the first IGBT chip 51, the anode of the first diode chip 52, and the third conductive plate 43. The second CLIP 62 is electrically connected to the gate (G) of the first IGBT chip 51 and the first conductive plate 41. The third CLIP 63 is electrically connected to the emitter (E) of the second IGBT chip 53, the anode of the second diode chip 54, and the fourth conductive plate 44. The fourth CLIP 64 is electrically connected to the gate (G) of the second IGBT chip 53 and the sixth conductive plate 46. Both the first CLIP 61 and the third CLIP 63 include three soldering portions and two connecting portions connecting the three soldering portions. One or more solder grooves are formed through the soldering portions on the IGBT chip and the diode chip, allowing partial solder paste to penetrate.

[0032] Specifically, the CLIP structure further includes a bridging CLIP 65, which electrically connects the third conductive sheet 43 and the fourth conductive sheet 44. The number of the first IGBT chips 51 and the second IGBT chips 53 are the same, and they are positioned opposite each other in a first direction. The number of bridging CLIPs 65 is the same as the number of the first IGBT chips 51, and they are also positioned opposite each other in a first direction.

[0033] The signal terminal is located on one side of the switching unit, and the power terminal is soldered to the conductive sheet of the switching unit.

[0034] Specifically, the second conductive sheet 42 has a welding area 201 for welding the first power terminal 21, the fifth conductive sheet 45 has a welding area 202 for welding the second power terminal 22, and the third conductive sheet 43 or the fourth conductive sheet 44 has a welding area 203 for welding the third power terminal 23.

[0035] The switching unit has conductive plates 481, 482, 483, and 484 on one side. The first signal terminal 24 is soldered to the conductive plate 481, the second signal terminal 25 is soldered to the conductive plate 482, the third signal terminal 26 is soldered to the conductive plate 483, and the fourth signal terminal is soldered to the conductive plate 484.

[0036] refer to Figure 3Each of the chipsets includes two first IGBT chips 51, two first diode chips 52, two second IGBT chips 53, and two second diode chips 54. The gate spacing of the two first IGBT chips 51 is opposite to each other, and the gate spacing of the two second IGBT chips 53 is opposite to each other. Each second CLIP 62 includes a first welding portion soldered to the first conductive sheet 41, two second welding portions soldered to the gates of the two first IGBT chips 51 respectively, and a T-shaped connection portion connecting the first welding portion and the two second welding portions. Each fourth CLIP 64 includes a first welding portion soldered to the sixth conductive sheet 46, two second welding portions soldered to the gates of the two second IGBT chips 53 respectively, and a T-shaped connection portion connecting the first welding portion and the two second welding portions.

[0037] refer to Figure 3 The switching unit comprises multiple units arranged side-by-side along a second direction, wherein the first direction is perpendicular to the second direction, and the signal terminals and power terminals of the multiple switching units are shared. In this embodiment, there are two switching units; however, the number of switching units is not limited to two, and can also be one, three, or other numbers.

[0038] refer to Figure 3 The conductive sheet further includes a plurality of conductive strips 46 located around the first conductive unit and the second conductive unit. The CLIP structure includes a first bridging member 65 that electrically connects the conductive strips 46 to the first conductive unit, a second bridging member 67 that electrically connects the conductive strips 46 to the soldering area of ​​the signal terminal, and a third bridging member 66 that electrically connects two of the conductive strips 46.

[0039] refer to Figure 4 The first bridging member 65 and the third bridging member 66 each include two welding parts 602 and a connecting strip 603 located between the two welding parts 602. The middle of the connecting strip 603 is convex outward along the transverse direction to form an extension area 601.

[0040] The heat sink 13 and the conductive sheet form the DBC board. The conductive sheet is a copper-clad sheet, and the CLIP structure is a bent copper sheet.

[0041] refer to Figure 5During operation, the first power terminal 21 and the second power terminal 22 are current input terminals, the third power terminal 23 is the current output terminal, the first signal terminal 24 and the third signal terminal 26 are a set of signal input terminals, and the second signal terminal 25 and the fourth signal terminal 27 are signal input terminals. When a voltage signal is input to the first signal terminal 24 and the third signal terminal 26, the upper first IGBT chip 51 is turned on, and current flows from the first power terminal 21 to the third power terminal 23. Simultaneously, when a voltage signal is input to the second signal terminal 25 and the fourth signal terminal 27, the lower second IGBT chip 53 is turned on, and current flows from the second power terminal 22 to the third power terminal 23. By controlling the order in which the voltage signals are input to the first signal terminal 24, the second signal terminal 25, the third signal terminal 26, and the fourth signal terminal 27, the direction of current output can be controlled, thus achieving bidirectional switching control of the IGBT module.

[0042] Figure 5 A circuit diagram is given when there is only one first IGBT chip 51 and one second IGBT chip 53. Of course, there can be multiple first IGBT chips 51 and multiple second IGBT chips 53. When there are multiple first IGBT chips 51 and multiple second IGBT chips 53 are connected in parallel.

[0043] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.

Claims

1. An IGBT bidirectional switching module, characterized in that: The device includes a heat sink, one or more switching units, multiple signal terminals, and multiple power terminals. Each switching unit includes a conductive sheet laid on the heat sink, one or more chipsets, and a CLIP structure. The signal terminals include a first signal terminal, a second signal terminal, a third signal terminal, and a fourth signal terminal. The power terminals include a first power terminal, a second power terminal, and a third power terminal. The chipsets are soldered onto the conductive sheet. Each chipset includes a first IGBT chip, a first diode chip, a second IGBT chip, and a second diode chip. The CLIP structure is a copper conductive sheet and is soldered to the electrodes, power terminals, signal terminals, and conductive sheet of the chipset using solder paste. A diode chip is electrically connected between the emitter (E) and collector (C) terminals of the first IGBT chip to form a freewheeling circuit. A second diode chip is electrically connected between the emitter (E) and collector (C) terminals of the second IGBT chip to form a freewheeling circuit. The first signal terminal and the second signal terminal are electrically connected to the gate (G) terminals of the first IGBT chip and the second IGBT chip, respectively. The third signal terminal and the fourth signal terminal are electrically connected to the emitter (E) terminals of the first IGBT chip and the second IGBT chip, respectively. The first power supply terminal and the second power supply terminal are electrically connected to the collector (C) terminals of the first IGBT chip and the second IGBT chip, respectively. The third power supply terminal is also electrically connected to the emitter (E) terminals of both the first IGBT chip and the second IGBT chip.

2. The IGBT bidirectional switching module as described in claim 1, characterized in that: The conductive sheet includes a first conductive unit and a second conductive unit. The first conductive unit includes a first conductive sheet, a second conductive sheet, and a third conductive sheet arranged sequentially along a first direction. The second conductive unit has a fourth conductive sheet, a fifth conductive sheet, and a sixth conductive sheet arranged symmetrically with respect to the first conductive unit along the first direction. The first IGBT chip and the first diode chip are arranged along the first direction and soldered onto the second conductive sheet. The second IGBT chip and the second diode chip are arranged along the first direction and soldered onto the fifth conductive sheet. The CLIP structure includes a first CLIP component, a second CLIP component, a third CLIP component, and a fourth CLIP component. The first CLIP component is electrically connected to the emitter (E) terminal of the first IGBT chip, the anode of the first diode chip, and the third conductive sheet. The second CLIP component is electrically connected to the gate (G) terminal of the first IGBT chip and the first conductive sheet. The third CLIP component is electrically connected to the emitter (E) terminal of the second IGBT chip, the anode of the second diode chip, and the fourth conductive sheet. The fourth CLIP component is electrically connected to the gate (G) terminal of the second IGBT chip and the sixth conductive sheet.

3. The IGBT bidirectional switching module as described in claim 2, characterized in that: The CLIP structure further includes a bridging CLIP component, which electrically connects the third conductive sheet and the fourth conductive sheet.

4. The IGBT bidirectional switching module as described in claim 3, characterized in that: The number of the first IGBT chip and the second IGBT chip are the same and they are positioned opposite each other in a first direction. The number of the bridging CLIP is the same as the number of the first IGBT chip and they are positioned opposite each other in a first direction.

5. The IGBT bidirectional switching module as described in claim 2, characterized in that: The second conductive sheet has a welding area for welding a first power terminal, the fifth conductive sheet has a welding area for welding a second power terminal, and the third or fourth conductive sheet has a welding area for welding a third power terminal.

6. The IGBT bidirectional switching module as described in claim 2, characterized in that: Each of the chipsets includes two first IGBT chips, two first diode chips, two second IGBT chips, and two second diode chips. The gate spacing of the two first IGBT chips is opposite to each other, and the gate spacing of the two second IGBT chips is opposite to each other. Each second CLIP includes a first solder portion soldered to the first conductive sheet, two second solder portions soldered to the gates of the two first IGBT chips respectively, and a T-shaped connection portion connecting the first solder portion and the two second solder portions. Each fourth CLIP includes a first solder portion soldered to the sixth conductive sheet, two second solder portions soldered to the gates of the two second IGBT chips respectively, and a T-shaped connection portion connecting the first solder portion and the two second solder portions.

7. The IGBT bidirectional switching module as described in claim 2, characterized in that: The switching unit has multiple units, which are arranged side by side along a second direction. The first direction is perpendicular to the second direction, and the signal terminals and power terminals of the multiple switching units are shared.

8. The IGBT bidirectional switching module as described in claim 1, characterized in that: The conductive sheet also includes a plurality of conductive strips located around the first conductive unit and the second conductive unit. The CLIP structure includes a first bridging component that electrically connects the conductive strips to the first conductive unit, a second bridging component that electrically connects the conductive strips to the soldering area of ​​the signal terminal, and a third bridging component that electrically connects the two conductive strips.

9. The IGBT bidirectional switching module as described in claim 8, characterized in that: The first bridging component and the third bridging component each include two welded portions and a connecting strip located between the two welded portions, wherein the middle of the connecting strip protrudes outward in a transverse direction to form an extension area.

10. The IGBT bidirectional switching module as described in claim 1, characterized in that: The signal terminal is located on one side of the switching unit, and the power terminal is soldered to the conductive plate of the switching unit.

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