Structure for improving uniformity of aluminum target film
By increasing the thickness of the central region of the aluminum target, the problem of film non-uniformity caused by the non-uniform magnetic field on the target surface was solved, thus improving the uniformity of the aluminum target film and enhancing the coating quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- KONFOONG MATERIALS INTERNATIONAL CO LTD
- Filing Date
- 2025-03-25
- Publication Date
- 2026-05-26
AI Technical Summary
During magnetron sputtering, the uneven magnetic field on the target surface causes the aluminum target film to be deposited thicker in the central region, and existing designs cannot effectively improve the film uniformity.
By increasing the thickness of the central region of the aluminum target, the magnetic field lines passing through the central region of the target are reduced, thereby balancing the magnetic field strength and improving the uniformity of the aluminum target film.
It effectively reduces the magnetic field strength in the central region of the target material, improves the uniformity of the aluminum target film, and enhances the coating quality and production yield.
Smart Images
Figure CN224280424U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of target material manufacturing and relates to a structure for improving the uniformity of aluminum target thin films. Background Technology
[0002] In the magnetron sputtering physical vapor deposition process, under certain process conditions, the target material is sputtered with an uneven surface magnetic field, and the magnetic field in the central region is stronger. As a result, the central region is sputtered more, leading to a thicker film deposited in the central region on the wafer. The existing design surface is planar, and the product thickness is uniform, so the obstruction to the passage of the magnetic field is the same. This results in a relatively high magnetic field line density on the surface of the central region, and a thicker film deposited in the central region on the wafer.
[0003] CN112708865A discloses a coating apparatus for improving thin film uniformity, comprising: a cavity, a deposition source, and a wafer substrate. A target is located at the upper part of the cavity, a magnet is located above the target, and the wafer substrate is located at the lower part of the cavity. The wafer substrate includes a substrate surface and a planar electrode located below the substrate surface. The planar electrode is used to provide a bias field. The planar electrode is divided into multiple electrode regions by one or more insulating rings. Each electrode region separated by the insulating ring can independently generate a pulsed DC bias voltage or a radio frequency bias voltage to generate the same or different negative bias voltages in different regions of the wafer surface. By dividing the planar electrode into regions, this coating apparatus can set different bias voltage magnitudes according to the process requirements of different regions of the wafer surface. By adjusting the resistance value of the series resistor in each electrode region, the stress uniformity and sheet resistance uniformity of the deposited thin film can be optimized, which can significantly improve the quality of the deposited thin film and help improve the production yield.
[0004] CN106756790A discloses a PVD cavity structure for improving the sheet resistance uniformity of metal oxide thin films, including: a cavity, a driving device, a magnetic component, a target material, an upper baffle, a lower baffle, and a wafer; the upper baffle is in the shape of an inverted conical cylinder, with its outer edge positioned at the opening of the cavity, and its bottom end lower than the upper surface of the base pressure ring; the cavity has an oxygen inlet, and an inlet ring is installed at the inlet. The inlet ring is divided into an outer ring and an inner ring. The outer ring has one inlet and two outlets, with the two separate holes connecting to the inner ring, and the holes in the inner ring are symmetrically distributed. With this cavity structure, gas entering the cavity is not immediately drawn away from the gap between the upper and lower baffles. During the downward drawing process, the gas flow has a vector direction towards the center, increasing the concentration of reactive gas at the wafer center; changing the mixed gas inlet to a separate gas inlet results in a more uniform gas flow distribution and better dispersion. Separating the oxygen and argon inlets allows the argon gas to better stir the oxygen, resulting in a more uniform oxygen distribution. Utility Model Content
[0005] To address the technical problems existing in the prior art, this utility model provides a structure for improving the uniformity of aluminum target films. The structure reduces the passage of magnetic field lines in the central region of the target material and reduces the surface magnetic field intensity in the central region of the target material, thereby effectively improving the uniformity of the aluminum target film.
[0006] To achieve the above-mentioned technical effects, the present invention adopts the following technical solution:
[0007] This invention provides a structure for improving the uniformity of aluminum target films. The structure includes an aluminum target and a back plate welded to the aluminum target. The thickness of the central region of the aluminum target is greater than the thickness of the edge region of the aluminum target.
[0008] In this invention, by increasing the thickness of the central region of the aluminum target, the magnetic field lines passing through the central region of the target are reduced, thereby balancing the magnetic field strength between the central region and the surrounding region of the target and achieving the purpose of improving the uniformity of the aluminum target film.
[0009] In this invention, the aluminum target center region can be prepared by template method or other means to create a shaped aluminum target with a protruding center region, or the thickness of the aluminum target center region can be increased by electroplating, vapor deposition or other methods based on the existing ordinary aluminum target. The above methods are all conventional methods for preparing target materials in this field and are not specifically limited here.
[0010] As a preferred technical solution of this utility model, the thickness of the central region of the aluminum target material is greater than the thickness of the edge region of the aluminum target material by 0 to 2.0 mm, such as 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, or 1.9 mm, but is not limited to the listed values. Other unlisted values within this range are also applicable, excluding 0.
[0011] As a preferred embodiment of this invention, the thickness of the central region of the aluminum target is 0.2 to 1.0 mm greater than the thickness of the edge region of the aluminum target.
[0012] As a preferred technical solution of this utility model, the area of the central region of the aluminum target is 10% to 30% of the sputtering surface area of the aluminum target, such as 12%, 15%, 18%, 20%, 22%, 25% or 28%, etc., but is not limited to the listed values. Other unlisted values within this range are also applicable.
[0013] In this invention, the shape of the central region of the aluminum target material can be any one or a combination of at least two of the following: circle, ellipse, triangle, rectangle, pentagon, or hexagon. Typical but non-limiting examples of such combinations include: a combination of circle and ellipse, a combination of ellipse and triangle, a combination of triangle and rectangle, a combination of rectangle and pentagon, a combination of pentagon and hexagon, a combination of hexagon and circle, or a combination of circle, rectangle, and hexagon, etc.
[0014] As a preferred technical solution of this utility model, the thickness of the aluminum target material is 10.0 to 20.0 mm, such as 11.0 mm, 12.0 mm, 13.0 mm, 14.0 mm, 15.0 mm, 16.0 mm, 17.0 mm, 18.0 mm or 19.0 mm, but it is not limited to the listed values. Other unlisted values within this range are also applicable.
[0015] As a preferred technical solution of this utility model, the thickness of the aluminum target material is 12.0 to 15.0 mm.
[0016] As a preferred technical solution of this utility model, the shape of the aluminum target material can be any one or a combination of at least two of the following: circle, ellipse, triangle, rectangle, pentagon or hexagon. Typical but non-limiting examples of such combinations include: combination of circle and ellipse, combination of ellipse and triangle, combination of triangle and rectangle, combination of rectangle and pentagon, combination of pentagon and hexagon, combination of hexagon and circle, or combination of circle, rectangle and hexagon, etc.
[0017] As a preferred technical solution of this utility model, the thickness of the back plate is 10.0 to 20.0 mm, such as 11.0 mm, 12.0 mm, 13.0 mm, 14.0 mm, 15.0 mm, 16.0 mm, 17.0 mm, 18.0 mm or 19.0 mm, but it is not limited to the listed values. Other unlisted values within this range are also applicable.
[0018] As a preferred technical solution of this utility model, the thickness of the back plate is 12.0 to 15.0 mm.
[0019] As a preferred technical solution of this utility model, the shape of the back plate can be any one or a combination of at least two of the following: circle, ellipse, triangle, rectangle, pentagon or hexagon. Typical but non-limiting examples of such combinations include: combination of circle and ellipse, combination of ellipse and triangle, combination of triangle and rectangle, combination of rectangle and pentagon, combination of pentagon and hexagon, combination of hexagon and circle, or combination of circle, rectangle and hexagon, etc.
[0020] Compared with the prior art, the present invention has at least the following beneficial effects:
[0021] This invention provides a structure for improving the uniformity of aluminum target films. The structure reduces the passage of magnetic field lines in the central region of the target material and reduces the surface magnetic field strength in the central region of the target material, thereby effectively improving the uniformity of the aluminum target film. Attached Figure Description
[0022] Figure 1a This describes the distribution of the magnetic field in the aluminum target and backplate in the existing technology.
[0023] Figure 1b The distribution of the magnetic field in the structure provided by this utility model for improving the uniformity of aluminum target thin film.
[0024] Figure 2a This is a structural design of aluminum target material and backplate in the prior art.
[0025] Figure 2b A schematic diagram of the structure provided by this utility model for improving the uniformity of aluminum target thin films.
[0026] The present invention will now be described in further detail. However, the examples described below are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention shall be determined by the claims. Detailed Implementation
[0027] The technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.
[0028] To better illustrate this utility model and facilitate understanding of its technical solution, typical but non-limiting embodiments of this utility model are as follows:
[0029] Example 1
[0030] This embodiment provides a structure for improving the uniformity of aluminum target thin films, the structure of which is as follows: Figure 2b As shown, the structure includes an aluminum target and a back plate welded to the aluminum target. The thickness of the central region of the aluminum target is greater than the thickness of the edge region of the aluminum target. The thickness of the aluminum target is 10.0 mm. The central region of the aluminum target accounts for 10% of the sputtering surface area of the aluminum target. The thickness of the central region of the aluminum target is 0.5 mm greater than the thickness of the edge region of the aluminum target. The thickness of the back plate is 10.0 mm.
[0031] Example 2
[0032] This embodiment provides a structure for improving the uniformity of aluminum target thin films, the structure of which is as follows: Figure 2bAs shown, the structure includes an aluminum target and a back plate welded to the aluminum target. The thickness of the central region of the aluminum target is greater than the thickness of the edge region of the aluminum target. The thickness of the aluminum target is 20.0 mm. The central region of the aluminum target accounts for 30% of the sputtering surface area of the aluminum target. The thickness of the central region of the aluminum target is 2.0 mm greater than the thickness of the edge region of the aluminum target. The thickness of the back plate is 20.0 mm.
[0033] Example 3
[0034] This embodiment provides a structure for improving the uniformity of aluminum target thin films, the structure of which is as follows: Figure 2b As shown, the structure includes an aluminum target and a back plate welded to the aluminum target. The thickness of the central region of the aluminum target is greater than the thickness of the edge region of the aluminum target. The thickness of the aluminum target is 12.7 mm. The central region of the aluminum target accounts for 18% of the sputtering surface area of the aluminum target. The thickness of the central region of the aluminum target is 0.8 mm greater than the thickness of the edge region of the aluminum target. The thickness of the back plate is 12.7 mm.
[0035] Example 4
[0036] This embodiment provides a structure for improving the uniformity of aluminum target thin films, the structure of which is as follows: Figure 2b As shown, the structure includes an aluminum target and a back plate welded to the aluminum target. The thickness of the central region of the aluminum target is greater than the thickness of the edge region of the aluminum target. The thickness of the aluminum target is 15.0 mm. The central region of the aluminum target accounts for 20% of the sputtering surface area of the aluminum target. The thickness of the central region of the aluminum target is 1.0 mm greater than the thickness of the edge region of the aluminum target. The thickness of the back plate is 15.0 mm.
[0037] Example 5
[0038] This embodiment provides a structure for improving the uniformity of aluminum target thin films, the structure of which is as follows: Figure 2b As shown, the structure includes an aluminum target and a back plate welded to the aluminum target. The thickness of the central region of the aluminum target is greater than the thickness of the edge region of the aluminum target. The thickness of the aluminum target is 18.0 mm. The central region of the aluminum target accounts for 25% of the sputtering surface area of the aluminum target. The thickness of the central region of the aluminum target is 1.5 mm greater than the thickness of the edge region of the aluminum target. The thickness of the back plate is 18.0 mm.
[0039] Comparative Example 1
[0040] This comparative example is identical to Example 3 except that the sputtering surface of the aluminum target is flat and there is no protruding structure in the central region. Its structure is as follows: Figure 2a As shown.
[0041] The aluminum target used in Embodiments 1-5 and Comparative Example 1 of this utility model is 300mm in size, and the back plate is made of Al alloy material. The aluminum target, the back plate, and the central area of the aluminum target are all circular.
[0042] Thin films were prepared by PVD sputtering on the targets provided in Examples 1-5 and Comparative Example 1. The PVD conditions were 5 kW power under vacuum.
[0043] The flatness of the thin film prepared by the PVD method was tested. The coating uniformity test method was to measure the film thickness at multiple points and observe the difference ratio. The results are shown in Table 1.
[0044] Table 1
[0045]
[0046]
[0047] As can be seen from the test results in Table 1, the structure for improving the uniformity of aluminum target film provided by this invention can effectively improve the uniformity of aluminum target film. Compared with Example 1, Comparative Example 1 has no protruding structure in the central region, and its coating uniformity is significantly reduced compared with Example 1.
[0048] The applicant declares that the detailed structural features of this utility model are illustrated through the above embodiments, but this utility model is not limited to the above detailed structural features, that is, it does not mean that this utility model must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvements to this utility model, equivalent substitutions of selected components, additions of auxiliary components, and selection of specific methods, etc., all fall within the protection and disclosure scope of this utility model.
[0049] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.
[0050] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable way without contradiction. In order to avoid unnecessary repetition, this utility model will not describe the various possible combinations separately.
[0051] Furthermore, various different embodiments of this utility model can be combined in any way, as long as they do not violate the spirit of this utility model, they should also be regarded as the content disclosed by this utility model.
Claims
1. A structure for improving the uniformity of aluminum target thin films, characterized in that, The structure includes an aluminum target and a back plate welded to the aluminum target, wherein the thickness of the central region of the aluminum target is greater than the thickness of the edge region of the aluminum target. The thickness of the central region of the aluminum target is 0~2.0 mm greater than the thickness of the edge region of the aluminum target, excluding 0; The area of the central region of the aluminum target is 10-30% of the sputtering surface area of the aluminum target.
2. The structure for improving the uniformity of aluminum target thin films according to claim 1, characterized in that, The thickness of the central region of the aluminum target is 0.2~1.0 mm greater than the thickness of the edge region of the aluminum target.
3. The structure for improving the uniformity of aluminum target thin films according to claim 1, characterized in that, The thickness of the aluminum target is 10.0~20.0 mm.
4. The structure for improving the uniformity of aluminum target thin films according to claim 3, characterized in that, The thickness of the aluminum target is 12.0~15.0 mm.
5. The structure for improving the uniformity of aluminum target thin films according to claim 1, characterized in that, The shape of the aluminum target can be any one or a combination of at least two of the following: circular, elliptical, triangular, rectangular, pentagonal, or hexagonal.
6. The structure for improving the uniformity of aluminum target thin films according to claim 1, characterized in that, The thickness of the back plate is 10.0~20.0 mm.
7. The structure for improving the uniformity of aluminum target thin films according to claim 6, characterized in that, The thickness of the back plate is 12.0~15.0 mm.
8. The structure for improving the uniformity of aluminum target thin films according to claim 1, characterized in that, The shape of the backplate can be any one or a combination of at least two of the following: circle, ellipse, triangle, rectangle, pentagon or hexagon.