Semiconductor module, energy conversion device and method for manufacturing the semiconductor module

Abstract

Semiconductor module (10), comprising: - a first electrode connection (1) and a second electrode connection (2) arranged along a first direction (A1); and - a third electrode connection (3), a fourth electrode connection (4), a fifth electrode connection (5) and a sixth electrode connection (6) arranged along a second direction (A2) orthogonal to the first direction (A1), wherein: - the first electrode connection (1) is located at a position where the first direction (A1) intersects the second direction (A2), - the fourth electrode terminal (4), the fifth electrode terminal (5) and the sixth electrode terminal (6) are AC output terminals or AC input terminals, - the first electrode connection (1) is either an anode connection or a cathode connection, - at least one of the second electrode connection (2) and the third electrode connection (3) is the other of the anode connection and the cathode connection, - the third electrode connection (3): - either (A) the other of the anode terminal and the cathode terminal or (B) a terminal without contact and - is arranged next to the first electrode connection (1) along the second direction (A2), - the third electrode terminal (3) is the other of the anode terminal and the cathode terminal and - the second electrode connection (2) is an output connection.

Description

Background of the invention: Technical field

[0001] The present invention relates to a semiconductor module, an energy conversion device, and a method for manufacturing a semiconductor module. In particular, the present invention relates to a semiconductor module, an energy conversion device, and a method for manufacturing a semiconductor module having electrode connections. Description of the state of the art

[0002] Semiconductor modules are commonly known to convert direct current (DC) energy into three-phase (U-phase, V-phase, and W-phase) alternating current (AC) energy. Such a semiconductor module has an anode terminal and a cathode terminal connected to a DC power source, and AC output terminals corresponding to the U-phase, V-phase, and W-phase, respectively (see, for example, published Japanese patents JP 2008-029052A, JP 2008-166421A, and JP 2013-055739A). In a semiconductor module described in the disclosed Japanese patent JP 2008-029 052 A, an anode terminal, a cathode terminal and AC output terminals, each corresponding to the U-phase, the V-phase and the W-phase, are arranged in a straight line (this arrangement of the electrode terminals is hereinafter also referred to as a series arrangement).In a semiconductor module described in the disclosed Japanese patent JP 2008-166 421 A, a terminal-equipped package has a substantially rectangular shape. AC output terminals, corresponding to the U-phase, V-phase, and W-phase respectively, are arranged on a longer side, and an anode terminal and a cathode terminal are arranged on a shorter side of the substantially rectangular shape (this arrangement of electrode terminals is hereinafter referred to as the L-shaped arrangement).

[0003] DE 694 00 694 T2 discloses a semiconductor device for converting an input direct current into an output alternating current, which is designed with a block in which a plurality of semiconductor chips are installed, and with direct current input terminals, alternating current output terminals and control terminals of the semiconductor chips arranged on a rectangular upper surface of the block.A pair of positive terminals and a pair of negative terminals of the DC input connections are distributed on boundary sections of a pair of opposite sides of the rectangular top surface, wherein the positive terminals are opposite each other and the negative terminals are opposite each other, that the AC output connections are arranged on a boundary section of one side of another pair of opposite sides of the rectangular top surface, and that the control terminals of the semiconductor chips are arranged on a boundary section of another side of the other pair of opposite sides of the rectangular top surface.

[0004] DE 100 36 619 A1 relates to a semiconductor component which, within a housing, comprises a power element, a driver circuit, a protection circuit for the power element, and a control connection arrangement with control terminals for control signals that are routed from the driver circuit and the protection circuit to the outside of the housing. The control connection arrangement has the design of a socket-like connector for receiving pin- or knife-shaped terminals and has slot-shaped openings that allow the pin- or knife-shaped terminals to be inserted at least from above and from one side surface.

[0005] JP 2008-166 421 A discloses a power module designed for efficient wiring, connecting its internal circuitry and externally routed terminals held by its enclosing housing, thereby reducing its size and thickness and further reducing the inductance of its wiring. In this power module, its output terminals are located on the first edge of its enclosing housing, and its control terminals are located on the second edge of its enclosing housing opposite the first edge. Furthermore, external connection sections of its anode terminal and external connection sections of its cathode terminal are located on the remaining third and fourth edges of its enclosing housing, respectively.Furthermore, the anode and cathode terminal sections, each extending from the outer terminal sections at the third edge and the outer terminal sections at the fourth edge to the third edge or the fourth edge and further to the second edge, and coupled with inner terminal sections, are arranged in two layers closer to one side of the circuit mounting surface than the control terminals in the sectional view perpendicular to the circuit mounting surface, while being insulated from each other by the insulating element of the enclosure housing. Additionally, the inner terminal sections are arranged alternately between the inner terminal sections of the control terminals at the second edge.

[0006] JP H09-219970A describes a semiconductor power element designed to prevent malfunctions due to surge voltage or induced noise when constructed by combining a converter module and an inverter module. The device comprises a converter module and an inverter module, formed by arranging U, V, W, and P, N main circuit terminals and a control terminal on the top of a housing containing a plurality of built-in power elements forming a bridge circuit, and by wiring a busbar between the P and N terminals on each module.In this case, the terminals are arranged such that the P and N terminals of a converter and inverter face each other and are aligned in right-left symmetrical positions in the terminal arrangement, reducing the wiring length of the busbar wired between the In and N terminals, thereby reducing the wiring inductance and suppressing the influence of inductive noise on the semiconductor elements due to the current supply to the busbar. Summary of the invention

[0007] In the case of a series arrangement, an anode terminal and a cathode terminal are arranged along one direction of a longer side of a package. Conversely, in an L-shaped arrangement, an anode terminal and a cathode terminal are arranged along one direction of a shorter side of a package. That is, in both the series and L-shaped arrangements, the anode and cathode terminals are arranged along only one direction of either the longer or shorter side. An electrode (busbar) can, for example, be connected to a terminal of a semiconductor module for connection to an external device. The busbar is designed taking into account the arrangement of the anode and cathode terminals in the semiconductor module.In particular, inductance increases with the length of the busbar connecting a power source to the anode or cathode terminal. An increase in inductance leads to a higher voltage surge during a switching operation. Accordingly, the busbar is designed to have a short overall length.In a case where, for example, a semiconductor module using a series arrangement is connected via a busbar to a semiconductor module using an L-shaped arrangement, the modules should be arranged, for example, so that the shorter side of the series-arranged module faces the longer side of the L-shaped module, in order to shorten the overall busbar length. This is because the anode and cathode terminal arrangements differ between the two configurations. In other words, in a case where semiconductor modules with different terminal arrangements are electrically connected via a busbar, the possible arrangement of the modules is limited.

[0008] The present invention was developed in view of the aforementioned problem, and one object of the present invention is to provide a semiconductor module, an energy conversion device and a method for manufacturing a semiconductor module which are able to improve the degree of freedom for arranging the semiconductor module.

[0009] The problem underlying the invention is solved according to the invention in a semiconductor module by the features of claim 1 and alternatively by the features of claim 3, and in a method for manufacturing a semiconductor module according to the invention by the features of claim 7. Advantageous embodiments are the subject of the respective dependent claims.

[0010] A semiconductor module according to the present invention comprises a first electrode terminal, a second electrode terminal, a third electrode terminal, a fourth electrode terminal, a fifth electrode terminal, and a sixth electrode terminal. The first and second electrode terminals are arranged along a first direction. The third, fourth, fifth, and sixth electrode terminals are arranged along a second direction orthogonal to the first direction. The first electrode terminal is located at a position where the first direction intersects the second direction. The fourth, fifth, and sixth electrode terminals are AC output terminals or AC input terminals. The first electrode terminal is either an anode terminal or a cathode terminal.At least one of the second electrode terminals and one of the third electrode terminals is the other of the anode terminal and the cathode terminal. The third electrode terminal is either (A) the other of the anode terminal and the cathode terminal, or (B) a terminal without contact and it is located next to the first electrode terminal along the second direction.

[0011] According to a first alternative, the electrode terminal is the other of the anode terminal and the cathode terminal, and the second electrode terminal is an output terminal.

[0012] According to a second alternative, both the second electrode connection and the third electrode connection are the other of the anode connection and the cathode connection.

[0013] A method for manufacturing a semiconductor module according to the present invention comprises the steps of: manufacturing a base part having a first electrode terminal and a second electrode terminal arranged along a first direction, a third electrode terminal, a fourth electrode terminal, a fifth electrode terminal and a sixth electrode terminal arranged along a second direction orthogonal to the first direction, and an internal circuit, wherein the first electrode terminal is located at a position where the first direction intersects the second direction, wherein the fourth electrode terminal, the fifth electrode terminal and the sixth electrode terminal are AC output terminals or AC input terminals, wherein the first electrode terminal is either an anode terminal or a cathode terminal.wherein at least one of the second electrode terminals and the third electrode terminal is the other of the anode terminal and the cathode terminal, the second electrode terminal being electrically insulated from the third electrode terminal; and electrical connection of at least one of the second electrode terminals and the third electrode terminal to the internal circuit. The third electrode terminal is either (A) the other of the anode terminal and the cathode terminal or (B) a non-contact terminal and is arranged adjacent to the first electrode terminal along the second direction.

[0014] According to a first alternative, the electrode terminal is the other of the anode terminal and the cathode terminal, and the second electrode terminal is an output terminal.

[0015] The foregoing and other tasks, features, aspects and advantages of the present invention will become clearer from the following detailed description of the present invention in conjunction with the accompanying drawings. Brief description of the drawings Fig. Figure 1 is a perspective view that schematically shows an arrangement of a semiconductor module according to each of the first and second embodiments. Fig. Figure 2 is a top view schematically showing the arrangement of the semiconductor module according to each of the first and second embodiments. Fig. Figure 3 is a circuit diagram that schematically shows a circuit arrangement of the semiconductor module according to each of the first and second embodiments. Fig. Figure 4 is a perspective view that schematically shows an arrangement of an energy conversion device according to a fourth embodiment. Fig. Figure 5 is a circuit diagram that schematically shows a first example of an energy conversion device according to a fifth embodiment. Fig. Figure 6 is a circuit diagram that schematically shows a second example of the energy conversion device according to the fifth embodiment. Fig. Figure 7 is a flowchart that schematically shows a process for manufacturing a semiconductor module according to a sixth embodiment. Fig. Figure 8 is a top view schematically showing a first step of the process for manufacturing the semiconductor module according to the sixth embodiment. Fig. Figure 9 is a top view schematically showing an example of a second step of the process for manufacturing the semiconductor module to illustrate the technical background of the present invention. Fig. Figure 10 is a top view schematically showing an example of the second step of the process for manufacturing the semiconductor module to illustrate the technical background of the present invention. Fig. Figure 11 is a top view schematically showing an example of the second step of the process for manufacturing the semiconductor module according to the sixth embodiment. Description of preferred embodiments

[0016] Embodiments of the present invention are described below with reference to the drawings. It should be noted that identical or corresponding parts in the following drawings are identified by the same reference numerals, and their descriptions are not repeated. First embodiment

[0017] An arrangement of a semiconductor module according to a first embodiment of the present invention is described with reference to Fig. 1 to 3 described. A semiconductor module 10 according to the first embodiment mainly comprises a first electrode terminal 1, a second electrode terminal 2, a third electrode terminal 3, a fourth electrode terminal 4, a fifth electrode terminal 5, a sixth electrode terminal 6, a base part 7 and a connecting element 8. As described in Fig. As shown in Figure 2, the first electrode connection 1 and the second electrode connection 2 are arranged along a first direction A1. The third electrode connection 3, the fourth electrode connection 4, the fifth electrode connection 5, and the sixth electrode connection 6 are arranged along a second direction A2, orthogonal to the first direction A1. The first electrode connection 1 is located at a position where the first direction A1 intersects the second direction A2.

[0018] As in Fig. As shown in Figure 2, the base part 7, viewed from a top view (from a direction orthogonal to a plane formed by the first direction A1 and the second direction A2), has an elongated shape, and in particular, the base part 7 has a substantially rectangular shape. The first direction A1 is a direction of a shorter side of a rectangle. The second direction A2 is a direction of a longer side of the rectangle. As shown in Figure 2, the base part 7 has an elongated shape, and in particular, a substantially rectangular shape. The first direction A1 is a direction of a shorter side of the rectangle. The second direction A2 is a direction of a longer side of the rectangle. Fig. As shown in Figure 1, the first electrode connection 1, the second electrode connection 2, the third electrode connection 3, the fourth electrode connection 4, the fifth electrode connection 5, and the sixth electrode connection 6 are provided on the base part 7. The first electrode connection 1, the second electrode connection 2, the third electrode connection 3, the fourth electrode connection 4, the fifth electrode connection 5, and the sixth electrode connection 6 are located in the same plane. The first electrode connection 1, the second electrode connection 2, the third electrode connection 3, the fourth electrode connection 4, the fifth electrode connection 5, and the sixth electrode connection 6 are physically separated from each other. The distance between the first electrode connection 1 and the second electrode connection 2 can be greater than the distance between the first electrode connection 1 and the third electrode connection 3.

[0019] As in Fig. 1 and Fig. As shown in Figure 2, the first electrode connection 1, the second electrode connection 2, and the sixth electrode connection 6 are located at corner regions of the surface of the base part 7. More precisely, the first electrode connection 1 and the second electrode connection 2 are each located at the corner regions on one side and the other side in the first direction A1. The first electrode connection 1 and the sixth electrode connection 6 are each located at the corner regions on one side and the other side in the second direction A2. The third electrode connection 3, the fourth electrode connection 4, and the fifth electrode connection 5 are located between the first electrode connection 1 and the sixth electrode connection 6. The third electrode connection 3 is located next to the first electrode connection 1, and the fifth electrode connection 5 is located next to the sixth electrode connection 6.The fourth electrode terminal 4 is provided between the third electrode terminal 3 and the fifth electrode terminal 5. A recess, which is circular in a top view, may be provided near the center of each electrode terminal 1 to 6. The connecting element 8 is provided on the base part 7. A plurality of connecting elements 8 may be provided along a direction that runs through the second electrode terminal 2 and is parallel to the second direction A2. The connecting element 8 is, for example, connected to a circuit that drives a gate. It should be noted that the connecting element 8 is in . Fig. Figures 2 and subsequent are not shown for the sake of simplicity.

[0020] With reference to Fig. In Figure 3, semiconductor module 10 is, for example, an inverter. Semiconductor module 10 further comprises semiconductor elements such as a transistor and a diode. In particular, semiconductor module 10 comprises, for example, switching elements S1 to S6 and diodes D1 to D6. The switching elements S1 to S6 are, for example, insulated-gate bipolar transistors (IGBTs). The diodes D1 to D6 are, for example, reflux diodes. Preferably, the semiconductor elements consist of a wide-bandgap semiconductor, which has a larger bandgap than silicon. Examples of wide-bandgap semiconductors include gallium nitride, silicon carbide, and the like. As in Fig. As shown in Figure 3, the semiconductor elements such as the IGBTs are electrically connected, for example, to both the first electrode terminal 1 and the second electrode terminal 2.

[0021] As in Fig. As shown in Figure 3, switching element S1 and diode D1 are connected in parallel to form a first branch switching unit. Similarly, switching element S2 and diode D2 are connected in parallel to form a second branch switching unit. A connection point between the first and second branch switching units is connected to the sixth electrode terminal 6. The sixth electrode terminal 6 is, for example, a W-phase output terminal. Similarly, switching element S3 and diode D3 are connected in parallel to form a third branch switching unit. Similarly, switching element S4 and diode D4 are connected in parallel to form a fourth branch switching unit. A connection point between the third and fourth branch switching units is connected to the fifth electrode terminal 5. The fifth electrode terminal 5 is, for example, a V-phase output terminal.Similarly, switching element S5 and diode D5 are connected in parallel to form a fifth branch switching unit. Similarly, switching element S6 and diode D6 are connected in parallel to form a sixth branch switching unit. A connection point between the fifth and sixth branch switching units is connected to the fourth electrode terminal 4. The fourth electrode terminal 4 is, for example, a U-phase output terminal.

[0022] Although the foregoing description describes a case in which the fourth electrode terminal 4 is a U-phase AC output terminal, the fifth electrode terminal 5 is a V-phase AC output terminal, and the sixth electrode terminal 6 is a W-phase AC output terminal, the phase of each terminal is not limited to the phase described above. For example, the fourth electrode terminal 4, the fifth electrode terminal 5 and the sixth electrode terminal 6 can each be V-phase, W-phase, and U-phase AC output terminals, can each be W-phase, U-phase, and V-phase AC output terminals, can each be U-phase, W-phase, and V-phase AC output terminals, can each be V-phase, U-phase, and W-phase AC output terminals, or can each be W-phase, V-phase, and U-phase AC output terminals.The fourth electrode connection 4, the fifth electrode connection 5 and the sixth electrode connection 6 can be connected to a load 12 such as a motor.

[0023] The first electrode terminal 1 can be connected, for example, to an anode (a P-side) of a DC power source 11. In other words, the first electrode terminal 1 is an anode input terminal. The first electrode terminal 1 is connected to the first branch switching unit, the third branch switching unit, and the fifth branch switching unit. Similarly, the second electrode terminal 2 can be connected, for example, to a cathode (an N-side) of the DC power source 11. In other words, the second electrode terminal 2 is a cathode input terminal. The second electrode terminal 2 is connected to the second branch switching unit, the fourth branch switching unit, and the sixth branch switching unit.

[0024] Again with reference to Fig. 2. The first electrode terminal 1 can be connected to the anode (P-side) of the DC power source 11, the second electrode terminal 2 can be connected to the cathode (N-side) of the DC power source 11, and the third electrode terminal 3 can be an output terminal connectable to a braking circuit (not shown). Alternatively, the first electrode terminal 1 can be connected to the cathode (N-side) of the DC power source 11, the second electrode terminal 2 can be connected to the anode (P-side) of the DC power source 11, and the third electrode terminal 3 can be an output terminal connectable to the braking circuit. Alternatively, the first electrode terminal 1 can be connected to the anode (P-side) of the DC power source 11, the third electrode terminal 3 can be connected to the cathode (N-side) of the DC power source 11, and the second electrode terminal 2 can be an output terminal connectable to the braking circuit.Alternatively, the first electrode terminal 1 can be connected to the cathode (N-side) of the DC power source 11, the third electrode terminal 3 can be connected to the anode (P-side) of the DC power source 11, and the second electrode terminal 2 can be an output terminal connectable to the braking circuit. That is, the first electrode terminal 1 is either a DC anode terminal or a DC cathode terminal. Either the second electrode terminal 2 or the third electrode terminal 3 is the other of the DC anode terminal and the DC cathode terminal. The other of the second electrode terminal 2 and the third electrode terminal 3 is an output terminal, such as a braking output terminal. The first electrode terminal 1 and at least one of the second electrode terminal 2 and the third electrode terminal 3 can be DC input terminals.

[0025] Next, the function and effect of the semiconductor module according to the first embodiment of the present invention will be described.

[0026] In the semiconductor module 10 according to the first embodiment, the first electrode terminal 1 and the second electrode terminal 2 are arranged along the first direction A1. The third electrode terminal 3, the fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are arranged along the second direction A2, orthogonal to the first direction A1. The first electrode terminal 1 is located at a position where the first direction A1 intersects the second direction A2. The fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are AC output terminals. The first electrode terminal 1 is either an anode terminal or a cathode terminal. At least one of the second electrode terminal 2 and the third electrode terminal 3 is the other of the anode terminal and the cathode terminal.This allows the anode and cathode connections to be arranged along either the first direction A1 or the second direction A2. This improves the degree of freedom for arranging the semiconductor module. Furthermore, it improves the degree of freedom for designing a busbar. Therefore, the design time for the semiconductor module can be shortened. Additionally, the semiconductor module can be standardized.

[0027] Furthermore, in the semiconductor module 10 according to the first embodiment, the fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are AC output terminals. The first electrode terminal 1 and at least one of the second electrode terminal 2 and the third electrode terminal 3 are DC input terminals. This improves the degree of freedom for arranging the semiconductor module 10, which is used, for example, as an inverter.

[0028] Furthermore, in the semiconductor module 10 according to the first embodiment, one of the second electrode terminals 2 and the third electrode terminal 3 is the other of the anode terminal and the cathode terminal. The other of the second electrode terminal 2 and the third electrode terminal 3 is an output terminal. Therefore, the other of the second electrode terminal 2 and the third electrode terminal 3 can effectively be used as an output terminal, such as a brake terminal.

[0029] Furthermore, according to the first embodiment, the semiconductor module 10 comprises a semiconductor element that is electrically connected to the first electrode terminal. The semiconductor element consists of a wide-bandgap semiconductor, which has a larger bandgap than that of silicon. A wide-bandgap semiconductor such as SiC or GaN exhibits low loss during fast switching and, compared to a silicon semiconductor, offers excellent temperature tolerance. Accordingly, the wide-bandgap semiconductor is often used at a frequency higher than that used for a silicon semiconductor device (i.e., in a fast-switching condition). When the wide-bandgap semiconductor is used in the fast-switching condition, dV / dt is increased, and thus it is necessary to reduce the surge voltage.The degree of freedom for arranging the semiconductor module is increased by using the terminal arrangement of the semiconductor module 10 described above. As a result, the degree of freedom for arranging a snubber (damper) to reduce shock is increased. Therefore, the semiconductor module according to the first embodiment is suitable for use when the semiconductor element consists of a wide-bandgap semiconductor. Second embodiment

[0030] Next, an arrangement of a semiconductor module according to a second embodiment of the present invention is described. The semiconductor module according to the second embodiment differs from the semiconductor module according to the first embodiment mainly in that both the second electrode terminal 2 and the third electrode terminal 3 are DC anode terminals or DC cathode terminals. Apart from this, the semiconductor module according to the second embodiment is essentially identical to the semiconductor module according to the first embodiment.

[0031] With reference to Fig. 1 and Fig. 2. The first electrode terminal 1, the second electrode terminal 2, and the third electrode terminal 3 can be connected to a DC power source 11. Specifically, the first electrode terminal 1 can be connected to the anode (P-side) of the DC power source 11, and the second electrode terminal 2 and the third electrode terminal 3 can be connected to the cathode (N-side) of the DC power source 11. In other words, the first electrode terminal 1 is a DC anode input terminal, and the second electrode terminal 2 and the third electrode terminal 3 are DC cathode input terminals. Alternatively, the first electrode terminal 1 can be connected to the cathode (N-side) of the DC power source 11, and the second electrode terminal 2 and the third electrode terminal 3 can be connected to the anode (P-side) of the DC power source 11.In other words, the first electrode terminal 1 can be a DC cathode input terminal, and the second electrode terminal 2 and the third electrode terminal 3 can be DC anode input terminals. The second electrode terminal 2 and the third electrode terminal 3 have the same electrical potential.

[0032] Alternatively, the first electrode terminal 1 can be a DC anode output terminal, and the second electrode terminal 2 and the third electrode terminal 3 can be DC cathode output terminals. That is, the first electrode terminal 1 is either a DC anode or a DC cathode output terminal, and both the second electrode terminal 2 and the third electrode terminal 3 are the other of the DC anode and DC cathode output terminals, respectively.

[0033] In the semiconductor module 10 according to the second embodiment, both the second electrode terminal and the third electrode terminal are opposite the anode and cathode terminals. This means that the anode and cathode terminals, which are connected, for example, to a main power source, are arranged in two directions, i.e., the first direction A1 and the second direction A2. This improves the degree of freedom for designing a busbar. Furthermore, it improves the degree of freedom for arranging the semiconductor module.

[0034] Third embodiment to explain the technical background of the invention. Next, an arrangement of a semiconductor module according to a third embodiment is described to explain the technical background of the present invention. The semiconductor module according to the third embodiment differs from the semiconductor module according to the first embodiment mainly in that either the second electrode terminal 2 or the third electrode terminal 3 is a terminal without contact. Apart from this, the semiconductor module according to the third embodiment is essentially identical to the semiconductor module according to the first embodiment.

[0035] With reference to Fig. 1 and Fig. Terminal 2 can be either the second electrode terminal 2 or the third electrode terminal 3, which is not connected to the DC power source 11. Conversely, the other terminal connected to the second electrode terminal 2 and the third electrode terminal 3 can be connected to the DC power source 11. For example, the first electrode terminal 1 can be connected to the anode (P-side) of the DC power source 11, the second electrode terminal 2 can be connected to the cathode (N-side) of the DC power source 11, and the third electrode terminal 3 is not connected to the DC power source 11. In other words, the first electrode terminal 1 is a DC anode input terminal, the second electrode terminal 2 is a DC cathode input terminal, and the third electrode terminal 3 is a terminal without a contact. The terminal without a contact is not connected to any other terminal.This means that the non-contact connection has an electrical potential that is isolated from an electrical potential within the semiconductor module (i.e., an unconnected electrical potential).

[0036] Alternatively, the first electrode terminal 1 can be a DC cathode input terminal, the second electrode terminal 2 can be a DC anode input terminal, and the third electrode terminal 3 can be a terminal without a contact.

[0037] Alternatively, the first electrode terminal 1 can be a DC anode output terminal, the second electrode terminal 2 can be a DC cathode output terminal, and the third electrode terminal 3 can be a terminal without a contact.That is to say, in the third embodiment, for the purpose of explaining the technical background, the first electrode terminal 1 is either an anode terminal or a cathode terminal. One of the second electrode terminals 2 and the third electrode terminal 3 is the other of the anode terminal and the cathode terminal. The other of the second electrode terminal 2 and the third electrode terminal 3 is a terminal without contact.

[0038] In the semiconductor module 10 according to the third embodiment, for the purposes of explaining the technical background, one of the second electrode terminals 2 and the third electrode terminal 3 is the other of the anode terminal and the cathode terminal. The other of the second electrode terminal 2 and the third electrode terminal 3 is a non-contact terminal. The non-contact terminal is electrically isolated from the other terminals. Accordingly, the non-contact terminal can be used as a mechanical structural support for a circuit substrate, an electronic component, or the like that controls the semiconductor module. A more rigid housing structure can be achieved by increasing the number of elements that support the housing structure. Fourth embodiment

[0039] Next, an arrangement of an energy conversion device according to a fourth embodiment of the present invention is described. An energy conversion device 100 according to the fourth embodiment, for example, comprises at least one semiconductor module 10 according to the first and second embodiments.

[0040] As in Fig. As shown in Figure 4, the energy conversion device 100 mainly comprises, for example, a first semiconductor module 10a, a second semiconductor module 10b, a third semiconductor module 10c, a fourth semiconductor module 10d, a first busbar 14, and a second busbar 15. The first semiconductor module 10a, the second semiconductor module 10b, and the third semiconductor module 10c are arranged along a longitudinal direction of the base part 7. The fourth semiconductor module 10d is arranged such that a short direction of the fourth semiconductor module 10d is parallel to a longitudinal direction of the first semiconductor module 10a. In other words, the fourth semiconductor module 10d is arranged such that the short direction of the fourth semiconductor module 10d is opposite a longer side of the first semiconductor module 10a. The fourth semiconductor module 10d is also arranged such that a shorter side of the fourth semiconductor module 10d is opposite a longer side of the first semiconductor module 10a.

[0041] The first busbar 14 and the second busbar 15 are plate-like electrode wiring configurations. The first busbar 14 and the second busbar 15 are arranged, for example, to supply electrical energy to the first electrode terminal 1, the second electrode terminal 2, and the third electrode terminal 3. The first electrode terminal 1 of the first semiconductor module 10a, the first electrode terminal 1 of the second semiconductor module 10b, the first electrode terminal 1 of the third semiconductor module 10c, and the first electrode terminal 1 of the fourth semiconductor module 10d are electrically connected by the first busbar 14.Similarly, the third electrode terminal 3 of the first semiconductor module 10a, the third electrode terminal 3 of the second semiconductor module 10b, the third electrode terminal 3 of the third semiconductor module 10c, and the second electrode terminal 2 of the fourth semiconductor module 10d are electrically connected by the second busbar 15. The first electrode terminal 1 is, for example, an anode terminal. The second electrode terminal 2 and the third electrode terminal 3 are, for example, cathode terminals. By connecting the second busbar 15 to the second electrode terminal 2 instead of the third electrode terminal 3 of the fourth semiconductor module 10d, as described above, the overall length of the second busbar 15 can be shortened. Fifth embodiment

[0042] Next, an arrangement of an energy conversion device according to a fifth embodiment of the present invention is described. An energy conversion device 100 according to the fifth embodiment comprises, for example, at least one semiconductor module 10 according to the first and second embodiments. The energy conversion device 100 is, for example, an inverter device, a converter device, a servo amplifier, or an energy source unit.

[0043] As in Fig. As shown in Figure 5, such an energy conversion device 100, for example, mainly comprises a fifth semiconductor module 10e, a sixth semiconductor module 10f, an analog-to-digital (AD) converter 16, an integrated circuit 17, an isolation circuit 18, an integrated circuit 19, a third busbar 25, and a fourth busbar 25. The fifth semiconductor module 10e is, for example, a converter. The fifth semiconductor module 10e has diodes D8 to D13. A junction between diode D8 and diode D9 is connected to the sixth electrode terminal 6. The sixth electrode terminal 6 is, for example, a T-phase input terminal. A junction between diode D10 and diode D11 is connected to the fifth electrode terminal 5. The fifth electrode terminal 5 is, for example, an S-phase input terminal. A connection point between diode D12 and diode D13 is connected to the fourth electrode terminal 4.The fourth electrode terminal 4, for example, is an R-phase input terminal. The fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are designed to be connected to the AC power source 11.

[0044] Although the foregoing description describes a case in which the fourth electrode terminal 4 is an R-phase AC input terminal, the fifth electrode terminal 5 is an S-phase AC input terminal, and the sixth electrode terminal 6 is a T-phase AC input terminal, the phase of each terminal is not limited to the phase described above. For example, the fourth electrode terminal 4, the fifth electrode terminal 5 and the sixth electrode terminal 6 can each be S-phase, T-phase and R-phase AC input terminals, can each be T-phase, R-phase and S-phase AC input terminals, can each be R-phase, T-phase and S-phase AC input terminals, can each be S-phase, R-phase and T-phase AC input terminals, or can each be T-phase, S-phase and R-phase AC input terminals.

[0045] The first electrode terminal 1 and the second electrode terminal 2 are designed to output direct current. For example, the first electrode terminal 1 is an anode output terminal. It is connected to diodes D8, D10, and D12. The second electrode terminal 2 is a cathode output terminal. It is connected to diodes D9, D11, and D13. The third electrode terminal 3 can be connected to diodes D9, D11, and D13 instead of the second electrode terminal 2, or both the second electrode terminal 2 and the third electrode terminal 3 can be connected to diodes 9, 11, and 13. That is, the first electrode terminal and at least one of the second and third electrode terminals can be direct current output terminals.

[0046] As in Fig. As shown in Figure 5, the sixth semiconductor module 10f, for example, comprises an inverter circuit and a braking circuit. The inverter circuit has an arrangement that is essentially identical to the arrangement described in the first embodiment. The braking circuit comprises a diode D7 and a switching element S7. The diode D7 is connected to the first electrode terminal 1. The switching element S7 is connected to the second electrode terminal 2. An output electrode terminal of the braking circuit can be provided in the sixth semiconductor module 10f. A current sensor 13 is designed to detect an alternating current. The current sensor 13 is, for example, provided in a wiring configuration that connects the sixth electrode terminal 6 and a load 12, such as a motor. The current sensor 13 can, for example, be provided in a wiring configuration that connects the fifth electrode terminal 5 and a load 12, such as a motor.A signal detected by the current sensor 13 is sent to the analog-to-digital converter (ADC) 16. In the ADC 16, the signal detected by the current sensor 13 undergoes analog-to-digital conversion. The converted signal is sent to the integrated circuit 17. The integrated circuit 17 is, for example, a microcomputer or a digital signal processor (DSP). The integrated circuit 17 is connected to the isolation circuit 18. The isolation circuit 18 is connected to the integrated circuit 19. The integrated circuit 19 is, for example, a driver circuit or a protection circuit. The integrated circuit 19 controls, for example, the gate terminals of the switching elements S1 to S7.

[0047] As in Fig. As shown in Figure 5, the first electrode terminal 1 of the fifth semiconductor module 10e is connected to the first electrode terminal 1 of the sixth semiconductor module 10f via the third busbar 24. Similarly, the second electrode terminal 2 of the fifth semiconductor module 10e is connected to the second electrode terminal 2 of the sixth semiconductor module 10f via the fourth busbar 25. As shown in Fig. As shown in Figure 5, the first electrode terminal 1 and the second electrode terminal 2 of the fifth semiconductor module 10e are DC output terminals, and the fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 of the fifth semiconductor module 10e are AC input terminals. Conversely, the first electrode terminal 1 and the second electrode terminal 2 of the sixth semiconductor module 10f are DC input terminals, and the fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 of the sixth semiconductor module 10f are AC output terminals.

[0048] If the fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are AC input terminals, then the first electrode terminal 1 is either an anode output terminal or a cathode output terminal, and at least one of the second electrode terminal 2 and the third electrode terminal 3 is the other of both the anode output and the cathode output terminals. If the fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are AC output terminals, then the first electrode terminal 1 is either an anode input terminal or a cathode input terminal, and at least one of the second electrode terminal 2 and the third electrode terminal 3 is the other of both the anode input and the cathode input terminals.

[0049] The energy conversion device 100 can further include a seventh semiconductor module 10g, as shown in Fig. Figure 6 shows the arrangement of the seventh semiconductor module 10g. Since the arrangement of the seventh semiconductor module 10f is essentially identical to that of the sixth semiconductor module 10f, a detailed description is not repeated. The first electrode terminal 1 of the fifth semiconductor module 10e, the first electrode terminal 1 of the sixth semiconductor module 10f, and the first electrode terminal 1 of the seventh semiconductor module 10g are connected by the third busbar 24. Similarly, the second electrode terminal 2 of the fifth semiconductor module 10e, the second electrode terminal 2 of the sixth semiconductor module 10f, and the second electrode terminal 2 of the seventh semiconductor module 10g are connected by the fourth busbar 25.

[0050] In the fifth semiconductor module 10e according to the fifth embodiment, the fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are AC input terminals. The first electrode terminal 1 and at least one of the second electrode terminal 2 and the third electrode terminal 3 are DC output terminals. This improves the degree of freedom for arranging the semiconductor module 10, which is used, for example, as a converter.

[0051] Furthermore, in the energy conversion device 100 according to the fifth embodiment, since the degree of freedom for arranging each of a plurality of semiconductor modules 10 is high, the plurality of semiconductor modules 10 can be arranged in a compact manner. As a result, the energy conversion device 100 can be miniaturized. Furthermore, an increase in inductance can be prevented by optimizing the design of the busbars. Therefore, there is no need to add a snubber to suppress a voltage surge, and thus the energy conversion device 100 can be miniaturized even further. Sixth embodiment

[0052] Next, an example of a process for manufacturing the semiconductor module will be described.

[0053] First, a basic part manufacturing step (S10: Fig. 7) executed. With reference to Fig. 8 A base part (housing) is manufactured, which is provided with the first electrode connection 1, the second electrode connection 2, the third electrode connection 3, the fourth electrode connection 4, the fifth electrode connection 5, the sixth electrode connection 6 and an internal circuit 40. The first electrode connection 1 and the second electrode connection 2 are arranged along a first direction A1. The third electrode connection 3, the fourth electrode connection 4, the fifth electrode connection 5 and the sixth electrode connection 6 are arranged along a second direction A2 orthogonal to the first direction. The first electrode connection 1 is located at a position where the first direction A1 intersects the second direction A2.

[0054] The fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are, for example, AC output terminals. The fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 can be AC ​​input terminals. The first electrode terminal 1 is either an anode terminal or a cathode terminal. At least one of the second electrode terminal 2 and the third electrode terminal 3 is the other of the anode terminal and the cathode terminal, respectively. Electrode terminals 1 through 6 are electrically isolated from each other. In particular, the second electrode terminal 2 is electrically isolated from the third electrode terminal 3. Similarly, the second electrode terminal 2 is electrically isolated from the first electrode terminal 1. Similarly, the first electrode terminal 1 is electrically isolated from the third electrode terminal 3.

[0055] The internal circuit 40, for example, mainly comprises wiring 20, 21 and 22, switching elements S1 and S2, diodes D1 and D2 and a substrate 39, as shown in Fig. Figure 8 shows that the wires 20, 21, and 22 are arranged on the substrate 39 such that they are separated from each other. The switching element S1 and the diode D1 are arranged on the wiring 21. The switching element S2 and the diode D2 are arranged on the wiring 22.

[0056] Next, a connection step (S20: Fig. 7) carried out. In particular, the electrode terminals 1 to 6 are connected to the internal circuit 40, as shown in Fig. 9 showed the technical background. With reference to Fig. 9. For technical background, the first electrode terminal 1 is connected to wiring 21 using wire 32. The second electrode terminal 2 is connected to wiring 20 using wire 31. The third electrode terminal 3 is not connected to any other electrode terminal. The third electrode terminal 3 is not connected to the internal circuit 40. In other words, the third electrode terminal 3 is used as a non-contact terminal. The fourth electrode terminal 4 is connected to wiring 22 using wire 37. Wiring 22 is connected to diode D1 using wire 36. Diode D1 is connected to switching element S1 using wire 35. Wiring 20 is connected to diode D2 using wire 33. Diode D2 is connected to switching element S2 using wire 34.The first electrode terminal 1 and the second electrode terminal 2 are used as DC input terminals. The first electrode terminal 1 is used as an anode terminal, and the second electrode terminal 2 is used as a cathode terminal. The fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are used as AC output terminals.

[0057] In the connection step (S20: Fig. 7) The electrode terminals 1 to 6 can be connected to the internal circuit 40 as shown in Fig. 10. The technical background was shown. With reference to Fig. 10. For technical background, the first electrode terminal 1 is connected to the wiring 21 using wire 32. The third electrode terminal 3 is connected to the wiring 20 using wire 38. The second electrode terminal 2 is not connected to any other terminal. The second electrode terminal 2 is not connected to the internal circuit 40. In other words, the second electrode terminal 2 is used as a terminal without contact. The first electrode terminal 1 and the third electrode terminal 3 are used as DC input terminals. The first electrode terminal 1 is used as an anode terminal, and the third electrode terminal 3 is used as a cathode terminal. The fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are used as AC output terminals. Apart from this, the arrangement is identical to that described in Fig. 9 is described.

[0058] In the connection step (S20: Fig. 7) The electrode terminals 1 to 6 can be connected to the internal circuit 40 as shown in Fig. 11 shown. With reference to Fig. In Figure 11, the first electrode terminal 1 is connected to wiring 21 using wire 32. The third electrode terminal 3 is connected to wiring 20 using wire 38. The second electrode terminal 2 is connected to wiring 20 using wire 31. The first electrode terminal 1, the second electrode terminal 2, and the third electrode terminal 3 are used as DC input terminals. The first electrode terminal 1 is used as an anode terminal, and the second electrode terminal 2 and the third electrode terminal 3 are used as cathode terminals. The fourth electrode terminal 4, the fifth electrode terminal 5, and the sixth electrode terminal 6 are used as AC output terminals. Apart from this, the arrangement is identical to that described in Figure 1. Fig. 9 is described.

[0059] It should be noted that the wires connecting electrode terminals 1 to 6 and the internal circuit 40 can be made of a material such as aluminum or gold. Alternatively, a metal plate or similar material can be used instead of a wire. Elements can be connected by wire bonding, as described above, or by soldering or ultrasonic bonding.

[0060] As in Fig. 9 and Fig. As shown in Figure 11, in the method for manufacturing the semiconductor module 10 according to the sixth embodiment, at least one of the second electrode terminal 2 and the third electrode terminal 3 is electrically connected to the internal circuit 40. That is, it is possible that only one of the second electrode terminal 2 and the third electrode terminal 3 is connected to the internal circuit 40, or that both the second electrode terminal 2 and the third electrode terminal 3 are connected to the internal circuit 40. In other words, the connection of the second electrode terminal 2 and the third electrode terminal 3 to the internal circuit 40 is selective.Each of the second electrode terminal 2 and the third electrode terminal 3 must be provided on the base part 7 in such a way that it can be connected to the internal circuit 40, and may or may not be connected to the internal circuit 40. Thus, the second electrode terminal 2 is electrically isolated from the third electrode terminal 3 within the base part 7. During an assembly phase of the semiconductor module 10, the electrical connection or non-connection of the second electrode terminal 2 and the third electrode terminal 3 to the internal circuit 40 is performed selectively. That is, three in . Fig. Types of semiconductor modules shown in 9 to 11 can be created by using one in Fig.The structure shown in Figure 8 and the modification of the wire connections during the assembly phase can be achieved. Thus, since a common structure can be used before assembly, the handling of the components of the semiconductor module 10 can be simplified. Furthermore, the manufacturing process of the semiconductor module 10 can be generalized. Accordingly, the processing time for manufacturing the semiconductor module 10 can be reduced. Reference symbol list 1 - 6 - Electrode connection 7 - Base part 8 - Connecting element 10, 10a - 10g semiconductor module 11 - Energy source 12 - Last 13 - Current sensor 14, 15 - Busbar 16 - Analog-to-digital converters, AD converters 17 - integrated circuit 18 - Isolation circuit 19 - integrated circuit 20, 21, 22 - Wiring 24, 25 - Busbar 31 - 38 - wire 39 - Substrat 40 - internal circuit 100 - Energy conversion device A1 - first direction A2 - second direction D1 - D13 - Diode S1 - S7 - Switching element

Claims

[1] Semiconductor module (10), comprising: - a first electrode connection (1) and a second electrode connection (2) arranged along a first direction (A1); and - a third electrode connection (3), a fourth electrode connection (4), a fifth electrode connection (5) and a sixth electrode connection (6) arranged along a second direction (A2) orthogonal to the first direction (A1), wherein: - the first electrode connection (1) is located at a position where the first direction (A1) intersects the second direction (A2), - the fourth electrode terminal (4), the fifth electrode terminal (5) and the sixth electrode terminal (6) are AC output terminals or AC input terminals, - the first electrode connection (1) is either an anode connection or a cathode connection, - at least one of the second electrode connection (2) and the third electrode connection (3) is the other of the anode connection and the cathode connection, - the third electrode connection (3): - either (A) the other of the anode terminal and the cathode terminal or (B) a terminal without contact and - is arranged next to the first electrode connection (1) along the second direction (A2), - the third electrode terminal (3) is the other of the anode terminal and the cathode terminal and - the second electrode connection (2) is an output connection. [2] Semiconductor module (10) according to claim 1, wherein: - the fourth electrode terminal (4), the fifth electrode terminal (5) and the sixth electrode terminal (6) are AC output terminals and - the first electrode terminal (1) and the third electrode terminal (3) are DC input terminals. [3] Semiconductor module (10), exhibiting: - a first electrode connection (1) and a second electrode connection (2) arranged along a first direction (A1); and - a third electrode connection (3), a fourth electrode connection (4), a fifth electrode connection (5) and a sixth electrode connection (6) arranged along a second direction (A2) orthogonal to the first direction (A1), where: - the first electrode connection (1) is located at a position where the first direction (A1) intersects the second direction (A2), - the fourth electrode terminal (4), the fifth electrode terminal (5) and the sixth electrode terminal (6) are AC output terminals or AC input terminals, - the first electrode connection (1) is either an anode connection or a cathode connection, - at least one of the second electrode connection (2) and the third electrode connection (3) is the other of the anode connection and the cathode connection, - the third electrode connection (3): - either (A) the other of the anode terminal and the cathode terminal or (B) a terminal without contact and - is arranged next to the first electrode connection (1) along the second direction (A2), and - both the second electrode connection (2) and the third electrode connection (3) are the other of the anode connection and the cathode connection. [4] Semiconductor module (10) according to claim 1, - further comprising a semiconductor element which is electrically connected to the first electrode terminal (1), - wherein the semiconductor element consists of a wide bandgap semiconductor that has a larger bandgap than silicon. [5] Semiconductor module (10) according to claim 1, wherein - the fourth electrode terminal (4), the fifth electrode terminal (5) and the sixth electrode terminal (6) are AC input terminals and - the first electrode terminal (1) and the second electrode terminal (2) are DC output terminals. [6] An energy conversion device (100) comprising at least one semiconductor module according to claim 1. [7] Method for manufacturing a semiconductor module (10), which includes the following steps: - Manufacturing a base part (7) comprising a first electrode terminal (1) and a second electrode terminal (2) arranged along a first direction (A1), a third electrode terminal (3), a fourth electrode terminal (4), a fifth electrode terminal (5) and a sixth electrode terminal (6) arranged along a second direction (A2) orthogonal to the first direction (A1), and an internal circuit (40), where: - the first electrode connection (1) is located at a position where the first direction (A1) intersects the second direction (A2), - the fourth electrode terminal (4), the fifth electrode terminal (5) and the sixth electrode terminal (6) are AC output terminals or AC input terminals, - the first electrode connection (1) is either an anode connection or a cathode connection, - at least one of the second electrode connection (2) and the third electrode connection (3) is the other of the anode connection and the cathode connection, - the second electrode terminal (2) is electrically isolated from the third electrode terminal (3) and - the third electrode connection (3): - either (A) the other of the anode terminal and the cathode terminal or (B) a terminal without contact and - is arranged next to the first electrode connection (1) along the second direction (A2); and - electrically connecting at least one of the second electrode terminal (2) and the third electrode terminal (3) to the internal circuit (40), where: - the third electrode terminal (3) is the other of the anode terminal and the cathode terminal and - the second electrode connection (2) is an output connection.

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