Sputtering device and substrate processing device

Abstract

A sputtering apparatus (100) comprising a chamber (7), a substrate holder (108) configured to hold a substrate (109) in the chamber (7) and to rotate about an axis (8) perpendicular to a surface of the substrate (109), first to fourth target holders (91, 92, 93, 94) configured to hold four targets (T1, T2, T3, T4) respectively such that surfaces of the four targets (T1, T2, T3, T4) are inclined with respect to the surface of the substrate (109), first to fourth magnet units (80) respectively provided on the first to fourth target holders (91, 92, 93, 94), and an aperture unit (SU) configured to select a target to be used for sputtering from the four targets (T1, T2, T3, T4), wherein the substrate (109) is conveyed between an inner space of the chamber (7) and an outer space of the chamber (7) through a shut-off valve (6) along a conveying direction, characterized in that the first to fourth target holders (91, 92, 93, 94) are arranged in a plan view at corner points of a virtual rectangle (VR) with long sides (LS) and short sides (SS) and lie on a virtual circle (VC) whose center lies on the axis (8), the first target holder (91) and the second target holder (92) are arranged at two corner points that define a short side (SS) of the virtual rectangle (VR), and distances from the first target holder (91) and the second target holder (92) to the shut-off valve (6) are shorter than distances from the third target holder (93) and the fourth target holder (94) to the shut-off valve (6), and a part of each of the first to fourth magnet units (80) is arranged outside the chamber (7) in plan view such that a distance between the parts of the first and second magnet units (80) is longer than the width of the chamber (7) in a direction perpendicular to the conveying direction.

Description

[0001] The present invention relates to a sputtering apparatus according to the preamble of claim 1 and to a substrate processing apparatus comprising such a sputtering apparatus. STATE OF THE ART

[0002] JP 2009 - 041 108 A discloses an arrangement in which a plurality of sputtering devices are arranged around a conveyor chamber. In each sputtering device, four objects are arranged on the ceiling portion of a container forming a deposition chamber. A double rotary shutter mechanism is arranged between these objects and a substrate holder.

[0003] To form multiple films at high throughput for device fabrication, it is advantageous to use a substrate processing apparatus with a plurality of sputtering devices arranged around a conveying chamber. A plurality of sputtering devices may be arranged around the conveying chamber through a gate valve. In this case, to arrange multiple sputtering devices around the conveying chamber, the width of each sputtering device should be narrowed in a direction perpendicular to a direction in which a substrate is conveyed (supplied, fed) through a gate valve, particularly the width of each sputtering device on the gate valve side.

[0004] In the deposition chamber, which is Fig. As shown in Figure 2 in JP 2009-041108 A, objects 35, 36, 37, and 38 are arranged at the vertices of a virtual isosceles trapezoid. The distance between objects 36 and 38 arranged on the side of the shut-off valve 20 is shorter than the distance between objects 35 and 37 on the opposite side of the shut-off valve 20. This arrangement is advantageous for arranging multiple separation chambers around the conveying chamber.

[0005] However, the rear surface of each object is provided with a magnet for causing a magnetron discharge. Each magnet is generally arranged such that one of the N and S poles is directed toward the inside of the deposition chamber, and the other pole is directed toward the outside of the deposition chamber. The magnetic field formed within the deposition chamber by the magnet disposed on the rear surface of each object is influenced by the magnet disposed on the rear surface of each adjacent object. In each deposition chamber located in Fig. As shown in Figure 2 in JP 2009-041108 A, since the objects 35, 36, 37, 38 are arranged at the vertices of the virtual isosceles trapezoid, the magnetic fields formed on the respective surfaces of the respective objects may differ from each other. For example, the magnetic field formed on the respective surface of the object 35 is influenced by the magnets for the objects 36, 37, and 38, and the magnetic field formed on the respective surface of the object 36 is influenced by the magnets for the objects 35, 37, and 38. Since the positions of the objects 36, 37 and 38 relative to the object 35 differ from the positions of the objects 35, 37 and 38 relative to the object 36, the magnetic field formed on the respective surface of the object 35 may differ from the magnetic field formed on the respective surface of the object 36.Therefore, in the arrangement shown in . Fig. 2 in JP 2009 - 041 108 A, the sputtering characteristics vary depending on the arrangement positions of the articles to be used.

[0006] US 2005 / 0 199 490 A1 discloses a sputtering apparatus according to the preamble of claim 1. The sputtering apparatus includes a chamber, a substrate holder configured to hold a substrate in the chamber and to rotate about an axis perpendicular to a surface of the substrate, first to fourth target holders configured to hold four targets (objects, articles) respectively such that surfaces of the four targets are inclined with respect to the surface of the substrate, first to fourth magnet units provided respectively on the first to fourth target holders, and an aperture unit configured to select a target to be used for sputtering from the four targets. The substrate is conveyed between an inner space of the chamber and an outer space of the chamber through a shut-off valve along a conveying direction. SUMMARY OF THE INVENTION

[0007] It is the object of the present invention to improve a sputtering apparatus according to the preamble of claim 1 such that it can be arranged around a conveying chamber and the sputtering characteristic differences that can be caused (occur) depending on the positions of the objects to be used are reduced.

[0008] The object of the present invention is achieved by a sputtering device having the features of claim 1.

[0009] Advantageous further developments of the present invention are defined in the dependent claims.

[0010] Furthermore, a substrate processing apparatus is provided in claim 10, which comprises a conveying chamber with a plurality of connecting surfaces and a sputtering apparatus according to the invention which is connected to at least one of the plurality of connecting surfaces, wherein an angle defined by adjacent connecting surfaces of the plurality of connecting surfaces is greater than 90°.

[0011] The present invention provides a sputtering apparatus which is advantageous, for example, in that it can be arranged around a conveying chamber and reduces the sputtering characteristic differences which may occur depending on the positions of the objects to be used. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a schematic plan view of a sputtering apparatus according to an embodiment of the present invention; Fig. 1B is a schematic sectional view of a sputtering apparatus according to an embodiment of the present invention; Fig. 2A is a view showing an example of the arrangement of a first shutter (first door, aperture); Fig. 2B is a view showing an example of the arrangement of a second shutter (second door, aperture); Fig. 3A is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 3B is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 4A is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 4B is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 5A is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 5B is a view showing an example of control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 6A is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 6B is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 7A is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 7B is a view exemplifying control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 7C is a view showing an example of control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 7D is a view showing an example of control regarding the positional relationship between objects and the openings of the first and second shutters. Fig. 8 is a schematic sectional view of the sputtering apparatus according to an embodiment of the present invention; Fig. 9 is a sectional view of a substrate processing apparatus according to an embodiment of the present invention; and Fig. 10 is a block diagram for explaining a control device provided in the substrate processing apparatus according to an embodiment of the present invention. DESCRIPTION OF THE EMBODIMENTS

[0012] The present invention is described below using an exemplary embodiment with reference to the accompanying drawings.

[0013] Fig. 1A and Fig. 1B are a schematic plan view and a cross-sectional view of a sputtering apparatus 100 according to an embodiment of the present invention. The sputtering apparatus 100 includes a chamber 7, a substrate holder 108, and first to fourth object holders (object holders, target holders) 91, 92, 93, and 94. The substrate holder 108 can hold a substrate 109 in the chamber 7 and can be rotated about an axis 8 perpendicular to the surface of the substrate 109. The first to fourth object holders 91, 92, 93, and 94 hold objects (objects, targets) T1, T2, T3, and T4, respectively. The first to fourth article holders 91, 92, 93 and 94 are arranged along a virtual circle VC whose center is on the axis A, clockwise in the order: the first article holder 91, the second article holder 92, the third article holder 93 and the fourth article holder 94.The sputtering apparatus 100 is provided with a shut-off valve 6, and the substrate 109 is conveyed (supplied, fed) between the inner space and the outer space of the chamber 7 through the shut-off valve 6.

[0014] The sputtering apparatus 100 also includes a shutter unit (door unit, aperture unit) SU for selecting an object to be used for sputtering from the four objects T1, T2, T3, and T4 held by the first to fourth object holders 91, 92, 93, and 94, respectively. The shutter unit SU may include a first shutter (door, aperture) and a second shutter (door, aperture) 111 and 112 that can rotate about the axis 8, and may further include a drive unit 110 that individually rotates the first and second shutters 111 and 112.

[0015] The first shutter 111 and the second shutter 112 may each have at least one opening. If the first shutter 111 and the second shutter 112 each have two openings, it is possible to perform sputtering simultaneously using two devices (co-sputtering).

[0016] As in Fig. 2A, the first shutter 111 may have two openings H1 and H2, the centers of which are arranged on a virtual circle VC1, the center of which lies on the axis 8. As shown in Fig. 2B, the second shutter 112 may have two openings H3 and H4 whose centers are located on a virtual circle VC2 whose center is on the axis 8. The drive unit 110 drives the first shutter 111 and the second shutter 112 such that one of the four objects T1, T2, T3, and T4 used for sputtering is exposed to the substrate 109 through the opening of the first shutter 111 and the opening of the second shutter 112. The first shutter 111 and the second shutter 112 may be arranged to be spaced from each other in a direction along the axis 8. The first shutter 111 is arranged between the first to fourth object holders 91, 92, 93, and 94 and the second shutter 112.

[0017] The central angle of an arc whose two ends correspond to the centers of the two openings H1 and H2 of the first shutter 111, respectively, is the same as the central angle of an arc whose two ends correspond to the centers of two adjacent article holders selected from the first to fourth article holders 91, 92, 93, and 94. The central angle of an arc whose two ends correspond to the centers of the two openings H3 and H4 of the second shutter 112, respectively, is the same as the central angle of an arc whose two ends correspond to the centers of adjacent article holders selected from the first to fourth article holders 91, 92, 93, and 94.

[0018] In the case of Fig. 2A, a central angle αH12 of an arc whose two ends correspond to the centers of the two openings H1 and H2 of the first shutter 111, respectively, is the same as the central angle of an arc whose two ends correspond to the centers of the second article holder 92 and the third article holder 93, respectively (the central angle of an arc whose two ends correspond to the centers of the first article holder 91 and the fourth article holder 94, respectively). In the case shown in Fig. 2B, a central angle αH34 of an arc whose two ends respectively correspond to the centers of the two openings H3 and H4 of the second shutter 112 is the same as the central angle of an arc whose two ends respectively correspond to the centers of the second article holder 92 and the third article holder 93 (the central angle of an arc whose two ends respectively correspond to the centers of the first article holder 91 and the fourth article holder 94).

[0019] Instead of the case mentioned in Fig. 2A, the central angle of an arc whose two ends correspond to the centers of the two openings H1 and H2 of the first shutter 111, respectively, may be the same as the central angle of an arc whose two ends correspond to the centers of the first article holder 91 and the second article holder 92, respectively (the central angle of an arc whose two ends correspond to the centers of the third article holder 93 and the fourth article holder 94, respectively). Instead of the case shown in Fig. 2B, the central angle of an arc whose two ends correspond to the centers of the two openings H3 and H4 of the second shutter 112, respectively, may be the same as the central angle of an arc whose two ends correspond to the centers of the first article holder 91 and the second article holder 92, respectively (the central angle of an arc whose two ends correspond to the third article holder 93 and the fourth article holder 94, respectively).

[0020] A magnet unit 80 is arranged on the rear surface side of each of the objects 91, 92, 93, and 94. Each magnet unit 80 may include a magnet 82 for causing a magnetron discharge (e.g., DC magnetron discharge) and a drive unit 84 for driving (e.g., rotating the magnet 82). Each magnet unit 80 may also include a distance adjustment unit 84 for adjusting the distance between the magnet 82 and the object holder (the object).

[0021] Each of the article holders 91, 92, 93, and 94 may be configured to hold a corresponding one of the articles T1, T2, T3, and T4 in a position where its surface is inclined with respect to the surface of the substrate 109 held by the substrate holder 108. In this case, each of the article holders 91, 92, 93, and 94 may be configured to hold a corresponding one of the articles T1, T2, T3, and T4 such that a normal to its surface is directed toward the center of the substrate 109. In this case, each magnet unit 80 may be arranged such that its upper portion is inclined to separate (move away from) the axis 8.

[0022] As exemplified in Fig. As shown in Fig. 9, in order to arrange many sputtering apparatuses around a conveying chamber 300, the size of the sputtering apparatus 100 should be reduced in a direction (hereinafter also referred to as a "width direction") perpendicular to the conveying direction of the substrate 109 between the conveying chamber 300 and the sputtering apparatus 100. As described above, when the magnet unit 80 is tilted such that the upper portion of the magnet unit 80 is separated (removed) from the axis 8, the required area of ​​the sputtering apparatus 100 can be determined (fixed) by the upper portion of the magnet unit 80. In view of this arrangement, in order to reduce the size of the sputtering apparatus 100 in the width direction, the article holders 91, 92, 93, and 94 should be arranged to be compressed (squashed) in the width direction.

[0023] In this embodiment, therefore, first, the first to fourth article holders 91, 92, 93, and 94 (their centers) are arranged on a virtual circle VC whose center lies on the axis 8, and are also arranged at the vertices of a virtual quadrilateral VR having long sides LS and short sides SS and inscribed in the virtual circle VC such that the first article holder 91 and the second article holder 92 (their centers) are arranged respectively on the two vertices of the virtual quadrilateral VR defining a short side SS, and that the distances from these vertices to the shut-off valve 6 are shorter than the distances from the third article holder 93 and the fourth article holder 94 to the shut-off valve 6. In this case, the distances from the first article holder 91 and the second article holder 92 to the shut-off valve 6 are preferably equal to each other.

[0024] According to the above arrangement, the article holders 91, 92, 93, and 94 are arranged while being compressed (compressedly arranged) in the width direction, thereby reducing the size of the sputtering apparatus 100 in the width direction. This makes it possible to arrange more sputtering apparatuses 100 around the conveying chamber. In addition, according to the above arrangement, the magnetic fields formed on the surfaces of the articles T1, T2, T3, and T4 held by the first to fourth article holders 91, 92, 93, and 94, respectively, are equal to each other.For example, the influences that the magnetic field formed on the surface of the object T1 held by the object holder 91 receives from the magnets 82 arranged on the rear surface sides of the objects T2, T3 and T4 held by the object holders 92, 93 and 94 are equivalent to those that the magnetic field formed on the surface of the object T2 held by the object holder 92 receives from the magnets 82 arranged on the rear surface sides of the objects T1, T3 and T4 held by the object holders 91, 92 and 94. That is, arranging the first to fourth object holders 91, 92, 93 and 94 (their centers) at the vertices of the virtual quadrilateral VR can equalize or unify the magnetic fields formed on the surfaces of the objects T1, T3 and T4.This can reduce the sputtering characteristic differences that may be caused depending on the positions of the items during their use.

[0025] A control of the positional relationship between the objects T1, T2, T3 and T4, the openings H1 and H2 of the first shutter 111 and the openings H3 and H4 of the second shutter 112 is described below with reference to Fig. 3A to 7D are described as examples. The sputtering apparatuses according to this embodiment are arranged such that the respective objects are arranged while being inclined toward a substrate. However, for convenience of description, Fig. 3A to 7D that the objects T1, T2, T3 and T4, the openings H1 and H2 of the first closure 111 and the openings H3 and H4 of the second closure 112 are shown parallel to each other. Fig. 7A to 7D are sectional views of the items T1, T2, T3, and T4, the openings H1 and H2 of the first shutter 111, and the openings H3 and H4 of the second shutter 112 along the virtual circle described above. The control device shown in Fig. 10 can perform control of the positional relationship shown exemplified in Fig. 3A to 7D.

[0026] With reference to Fig. 3A to 7D, each item indicated by hatching is the item used for sputtering, and each item indicated by the solid outline or the dashed outline is the item not used for sputtering. In addition, each item indicated by the solid outline is the item located at the same position as the opening of the first shutter 111 or the opening of the second shutter 112. Each item indicated by the dashed outline is the item located at a position different from either the opening of the first terminal 111 or the opening of the second shutter 112.

[0027] Fig. 3A, Fig. 3B and Fig. 7A shows an example of a state in which the object T2 is used for sputtering. Fig. 4A, Fig. 4B and Fig. 7B show an example of a state in which the article T1 is used for sputtering. In the case shown in Fig. 3A, Fig. 3B and Fig. 7A, since the opening H2 of the first shutter 111 faces the object T3 not used for sputtering, the material emitted from the object T2 used for sputtering adheres to the object T3. This may contaminate the object T3. In contrast, in the case shown in Fig. 4A, Fig. 4B and Fig. 7B, since the opening H2 of the first shutter 111 does not face the object T3 not used for sputtering, the material emitted from the object T2 used for sputtering does not easily adhere to the object T3. This reduces the possibility of contaminating the object T3. In this case, in the case shown in Fig. 4A, Fig. 4B and Fig. 7B, when only one object T3 of the four objects T1, T2, T3, and T4 is used for sputtering, control is carried out to cause one of the two openings H1 and H2 of the first shutter 111 to face the object T1, while causing the other opening not to face any of the four objects T1, T2, T3, and T4. In addition, in the case shown in Fig. 4A, Fig. 4B and Fig. 7B, since the distance between the objects T1 and T2 is larger than that between the openings H1 and H2, the probability of contamination of the object T3 is lower than in other cases.

[0028] Fig. 5A, Fig. 5B and Fig. 7C shows an example case where none of the objects T1, T2, T3 and T4 are used for sputtering. Fig. 6A, Fig. 6B and Fig. 7D exemplifies a case where the items T2 and T3 of the items T1, T2, T3, and T4 are simultaneously used for sputtering (that is, sputtering is performed simultaneously).

[0029] Although an embodiment related to the structure of the sputtering apparatus 100 will be described below with reference to Fig. 8, the technical scope of the present invention is not limited to this embodiment. According to one embodiment, a distance R1 between each of the centers of the objects T1, T2, T3, and T4 and the axis 8 is 240 mm, a distance (a distance along the axis 8) Wd between each of the centers of the objects T1, T2, T3, and T4 and the surface of the substrate 109 is 250 mm, an angle α defined by a normal from each of the centers of the objects T1, T2, T3, and T4 and the axis 8 is 35°, and a diameter Dw of the substrate 109 is 300 mm. In this embodiment, σ (standard deviation) of the thickness distribution of the film formed on the substrate 109 by sputtering is equal to or less than 2%.

[0030] Fig. 9 shows, by way of example, a substrate processing apparatus with one or a plurality of sputtering devices 100 arranged around the conveying chamber 300. The conveying chamber 300 has a plurality of connecting surfaces 301. The sputtering device 100 is connected to at least one of the plurality of connecting surfaces 301. The conveying chamber 300 and the sputtering device 100 are connected to each other by the shut-off valve 6. An angle A defined by the adjacent connecting surfaces 301 of the plurality of connecting surfaces 301 is preferably greater than 90°. This makes it possible to arrange more sputtering devices 100 around the chamber 300.

[0031] Fig. 10 shows the arrangement of a control device 400 according to this embodiment. The control device 400 has an input unit 400b, a storage unit 400c that stores programs and data, a processor 400d, and an output unit 400e, and can control the sputtering device 100 according to the embodiment. The control device 400 can control the operation of the sputtering device 100 by causing the processor 400d to read out control programs stored in the storage unit 400c and execute them. That is, the drive unit 110 is operated according to the control of the control device 400 to drive the first shutter 111 and the second shutter 112, which are shown in Fig.3A to 7D. Note that the control device 400 may be provided separately from the sputtering apparatus 100 or incorporated into the sputtering apparatus 100. In addition, the control device 400 is connected to a power supply (current supply) that controls power (current) applied to the objects T1, T2, T3, and T4 (that is, the power applied to the object holders 91, 92, 93, and 94), and may control the drive unit 110 in accordance with the power supply to each object.

Claims

[1] A sputtering apparatus (100) comprising a chamber (7), a substrate holder (108) configured to hold a substrate (109) in the chamber (7) and to rotate about an axis (8) perpendicular to a surface of the substrate (109), first to fourth target holders (91, 92, 93, 94) configured to hold four targets (T1, T2, T3, T4) respectively such that surfaces of the four targets (T1, T2, T3, T4) are inclined with respect to the surface of the substrate (109), first to fourth magnet units (80) respectively provided on the first to fourth target holders (91, 92, 93, 94), and an aperture unit (SU) configured to select a target to be used for sputtering from the four targets (T1, T2, T3, T4), wherein the substrate (109) is conveyed between an inner space of the chamber (7) and an outer space of the chamber (7) through a shut-off valve (6) along a conveying direction, characterized by , that the first to fourth target holders (91, 92, 93, 94) are arranged in a plan view at corner points of a virtual rectangle (VR) with long sides (LS) and short sides (SS) and lie on a virtual circle (VC) whose center lies on the axis (8), the first target holder (91) and the second target holder (92) are arranged at two corner points that define a short side (SS) of the virtual rectangle (VR), and distances from the first target holder (91) and the second target holder (92) to the shut-off valve (6) are shorter than distances from the third target holder (93) and the fourth target holder (94) to the shut-off valve (6), and a part of each of the first to fourth magnet units (80) is arranged outside the chamber (7) in plan view such that a distance between the parts of the first and second magnet units (80) is longer than the width of the chamber (7) in a direction perpendicular to the conveying direction. [2] Sputtering apparatus (100) according to claim 1, wherein the distances from the first target holder (91) and the second target holder (92) to the shut-off valve (6) are equal to each other. [3] Sputtering apparatus (100) according to claim 1 or 2, wherein the first to fourth target holders (91, 92, 93, 94) are arranged sequentially along the virtual circle (VC) in the following order: the first target holder (91), the second target holder (92), the third target holder (93) and the fourth target holder (94), the aperture unit (SU) comprises a first aperture (111) and a second aperture (112) designed to rotate about the axis (8), the first aperture (111) and the second aperture (112) are arranged to be spaced apart from each other in a direction along the axis (8), the first aperture (111) has two openings (H1, H2) arranged on a virtual circle (VC1) whose center lies on the axis (8), and the second aperture (112) has two openings (H3, H4) arranged on a virtual circle (VC2) whose center lies on the axis (8), and a central angle of an arc having two ends, each corresponding to the center points of the two openings (H1, H2) of the first aperture (111), is equal to a central angle of an arc having two ends, each corresponding to the center points of adjacent target holders (92 and 93; 91 and 92) selectable from the first to fourth target holders (91, 92, 93, 94), and a central angle of an arc having two ends, each corresponding to the center points of the two openings (H3, H4) of the second aperture (112), is equal to a central angle of an arc having two ends, each corresponding to the center points of adjacent target holders (92 and 93; 91 and 92) selectable from the first to fourth target holders (91, 92, 93, 94). [4] The sputtering apparatus (100) according to claim 3, wherein the central angle of the arc having two ends respectively corresponding to the centers of the two openings (H1, H2) of the first aperture (111) is the same as a central angle of an arc having two ends respectively corresponding to the centers of the second target holder (92) and the third target holder (93), and the central angle of the arc having two ends respectively corresponding to the centers of the two openings (H3, H4) of the second aperture (112) is the same as a central angle of an arc having two ends respectively corresponding to the centers of the second target holder (92) and the third target holder (93). [5] The sputtering apparatus (100) according to claim 3, wherein the central angle of the arc having two ends respectively corresponding to the centers of the two openings (H1, H2) of the first aperture (111) is equal to a central angle of an arc having two ends respectively corresponding to centers of the first target holder (91) and the second target holder (92), and the central angle of the arc having two ends respectively corresponding to the centers of the two openings (H3, H4) of the second aperture (112) is equal to a central angle of an arc having two ends respectively corresponding to centers of the first target holder (91) and the second target holder (92). [6] Sputtering apparatus (100) according to one of claims 3 to 5, wherein the first aperture (111) is arranged between the first to fourth target holders (91, 92, 93, 94) and the second aperture (112), and the first aperture (111) is controllable such that one of the two openings (H1, H2) of the first aperture (111) faces only one of the four targets (T1, T2, T3, T4) and the other opening does not face any of the four targets (T1, T2, T3, T4). [7] The sputtering apparatus (100) according to claim 3 or 4, wherein the first aperture (111) is controllable such that the first opening (H1) is disposed in front of the target (T2) held by the second target holder (92) and the second opening (H2) is disposed in front of the target held by the third target holder (93), and the second aperture (112) is controllable such that the fourth opening (H4) is disposed in front of the target (T2) held by the second target holder (92) and the third opening (H3) is disposed at a position offset from each front surface of the targets (T1, T2, T3, T4) held by the first to fourth target holders (91, 92, 93, 94). [8] The sputtering apparatus (100) according to any one of claims 1 to 7, wherein a distance between a center of the first target holder (91) and the shut-off valve (6) in the conveying direction is shorter than a distance between the first target holder (91) and the fourth target holder (94) in the conveying direction. [9] The sputtering apparatus (100) according to any one of claims 1 to 8, wherein a width of the chamber (7) decreases in a width direction perpendicular to the conveying direction toward the shut-off valve (6) from a position on a line passing through the first target holder (91) and the second target holder (92) and being parallel to the width direction. [10] Substrate processing device comprising: a conveying chamber with a plurality of connecting surfaces; and a sputtering device connected to at least one of the plurality of bonding surfaces, wherein the sputtering device is the sputtering device (100) according to one of claims 1 to 9, and an angle defined by adjacent connecting surfaces of the plurality of connecting surfaces is greater than 90°.

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