POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, AS WELL AS POWER CONVERTER DEVICE

Abstract

Power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) comprising: a conductive circuit pattern (10) having a first main surface (10a); a power semiconductor device (15) bonded to the first main surface (10a); a sealing element (20) sealing the first main surface (10a) and the power semiconductor device (15); a first conductive support (30) filling the first hole (22) formed in the sealing member (20) and connected to the first main surface (10a) of the conductive circuit pattern (10); and a second conductive support (33, 36) filling a second hole (23, 24) formed in the sealing element (20) and connected to the power semiconductor device (15), wherein the first conductive support (30) has a first metal pin (31) and a first conductive bonding element (32), the second conductive support (33, 36) has a second metal pin (34, 37) and a second conductive bonding element (35, 38), the first conductive bonding element (32) fills between a first pin side surface of the first metal pin (31) and a first side surface of the first hole (22) and bonds the first metal pin (31) to the conductive circuit pattern (10), and the second conductive bonding element (35, 38) fills between a second pin side surface of the second metal pin (34, 37) and a second side surface of the second hole (23, 24) and bonds the second metal pin (34, 37) to the power semiconductor device (15).

Description

Technical area

[0001] The present invention relates to a power semiconductor device and a method for manufacturing the same, as well as a power converter device. State of the art

[0002] Japanese Patent Laid-Open No. 2002-170906 (PTL 1) discloses a semiconductor device comprising a substrate, a semiconductor chip, a wire, an electrode pattern, a sealing resin, and a post. The semiconductor chip is fixed to the substrate. The electrode pattern is disposed on the substrate. The wire is connected to the semiconductor chip and the electrode pattern. The sealing resin has a post hole. The post is formed in the post hole using high-speed Cu plating technology. One end of the post is connected to the electrode pattern, and the other end of the post protrudes from the outer surface of the sealing resin.

[0003] PTL2 relates to a semiconductor module, a manufacturing method thereof, and a bonding method thereof.

[0004] PTL 3 relates to a resin-encapsulated semiconductor device, and more particularly to a power semiconductor device in which an electrode is taken out from an upper surface of a package. BibliographyPatent literature PTL 1: Japanese Patent Application Laid-Open No. JP 2002-170906 A PTL2: JP 2014 - 123 618 A PTL 3: JP 2011 - 138 998 A Summary of the inventionTechnical problem

[0005] A power semiconductor device including a power semiconductor device generates more heat. When the power semiconductor device is mounted on a substrate provided with an electronic component, it is necessary to protect the electronic component from the heat generated in the power semiconductor device. Furthermore, a high voltage applied to the power semiconductor device and a conductive circuit pattern generates a strong electric field between the power semiconductor device and the conductive circuit pattern.It is also necessary to reduce the adverse effects of electromagnetic interference caused by this strong electric field on the electronic component on the substrate and to prevent this strong electric field from causing dielectric breakdown in an insulating member (e.g., a sealing member that seals the power semiconductor device) disposed between the power semiconductor device and the electronic component. Therefore, it is necessary to increase the height of the support and increase the distance between the power semiconductor device and the electronic component. However, with high-speed Cu plating technology, it is impossible to increase the height of the support due to the support manufacturing time and cost.

[0006] The present invention was made in view of the above problem, and it is an object according to a first aspect of the present invention to provide a power semiconductor device in which a higher conductive post can be formed and which has improved reliability, and a method for manufacturing the same. An object according to a second aspect of the present invention is to improve the reliability of a power converter device. Solution to the problem

[0007] A power semiconductor device according to the present invention includes a conductive circuit pattern, a power semiconductor device, a sealing member, a first conductive post, and a second conductive post. The conductive circuit pattern has a first main surface. The power semiconductor device is bonded to the first main surface of the conductive circuit pattern. The sealing member seals the first main surface of the conductive circuit pattern and the power semiconductor device. The first conductive post fills a first hole formed in the sealing member and is connected to the first main surface of the conductive circuit pattern. The second conductive post fills a second hole formed in the sealing member and is connected to the power semiconductor device. The first conductive post includes a first metal pin and a first conductive bonding element.The second conductive post includes a second metal pin and a second conductive bonding element. The first conductive bonding element fills between a first pin side surface of the first metal pin and a first side surface of the first hole, bonding the first metal pin to the conductive circuit pattern. The second conductive bonding element fills between a second pin side surface of the second metal pin and a second side surface of the second hole, bonding the second metal pin to the power semiconductor device.

[0008] A method for manufacturing a power semiconductor device according to the present invention includes: bonding a power semiconductor device to a first main surface of a conductive circuit pattern; and disposing a sealing member that seals the first main surface of the conductive circuit pattern and the power semiconductor device and has a first hole and a second hole. The method for manufacturing a power semiconductor device according to the present invention includes: forming a first conductive post in the first hole of the sealing member; and forming a second conductive post in the second hole of the sealing member.Disposing the sealing member includes placing the conductive circuit pattern to which the power semiconductor device is bonded into a mold cavity having a first mold pin and a second mold pin, injecting a sealing resin material into the mold cavity, and curing the sealing resin material to obtain the sealing member. The first mold pin is disposed corresponding to the first hole of the sealing member. The second mold pin is disposed corresponding to the second hole of the sealing member. The first conductive post fills the first hole of the sealing member and is connected to the first main surface of the conductive circuit pattern. The second conductive post fills the second hole of the sealing member and is connected to the power semiconductor device. The first conductive post includes a first metal pin and a first conductive bonding element.

[0009] The second conductive post includes a second metal pin and a second conductive bonding element. The first conductive bonding element fills between a first pin side surface of the first metal pin and a first side surface of the first hole, bonding the first metal pin to the conductive circuit pattern. The second conductive bonding element fills between a second pin side surface of the second metal pin and a second side surface of the second hole, bonding the second metal pin to the power semiconductor device.

[0010] A power conversion device according to the present invention includes a main conversion circuit for converting input power and outputting the converted power, and a control circuit for outputting a control signal—for controlling the main conversion circuit—to the main conversion circuit. The main conversion circuit includes the semiconductor module according to the present invention. Advantageous effects of the invention

[0011] In the power semiconductor device according to the present invention, the first conductive post includes the first metal pin, and the second conductive post includes the second metal pin. This configuration can increase a first height of the first conductive post and a second height of the second conductive post. The first metal pin is bonded to the conductive circuit pattern and the sealing member by means of the first conductive bonding member. The second metal pin is bonded to the power semiconductor device and the sealing member by means of the second conductive bonding member. The reliability of the power semiconductor device can be improved.

[0012] In the method for manufacturing a power semiconductor device according to the present invention, the first conductive post includes the first metal pin, and the second conductive post includes the second metal pin. Accordingly, a higher first conductive post and a higher second conductive post can be formed. The first metal pin is bonded to the conductive circuit pattern and the sealing member by means of the first conductive bonding member. The second metal pin is bonded to the power semiconductor device and the sealing member by means of the second conductive bonding member. With the method for manufacturing a power semiconductor device in the present embodiment, a power semiconductor device with improved reliability can be obtained.

[0013] The power converter device according to the present invention has the power semiconductor device in the present invention and therefore has improved reliability. Short description of the drawings Fig. 1 is a schematic cross-sectional view of a power semiconductor device in a first embodiment. Fig. 2 is a schematic cross-sectional view showing a step of a first example, a second example, and a third example of a method for manufacturing a power semiconductor device in the first embodiment. Fig. 3 is a schematic cross-sectional view showing a step related to the Fig. 2 in the first example, the second example and the third example of the method for manufacturing a power semiconductor device in the first embodiment. Fig. 4 is a schematic cross-sectional view showing a step related to the Fig. 3 in the first example, the second example and the third example of the method for manufacturing a power semiconductor device in the first embodiment. Fig. Figure 5 is a schematic cross-sectional view showing a step related to the Fig. 4 in the first example of the method for manufacturing a power semiconductor device in the first embodiment. Fig. 6 is a schematic cross-sectional view showing a step related to the Fig. 5 in the first example of the method for manufacturing a power semiconductor device in the first embodiment. Fig. 7 is a schematic cross-sectional view showing a step related to the Fig. 4 in the second example of the method for manufacturing a power semiconductor device in the first embodiment. Fig. Fig. 8 is a schematic cross-sectional view showing a step related to the Fig. 4 in the third example of the method for manufacturing a power semiconductor device in the first embodiment. Fig. 9 is a schematic cross-sectional view of a power semiconductor module in the first embodiment. Fig. 10 is a schematic cross-sectional view of a power semiconductor module in a modification of the first embodiment. Fig. 11 is a schematic cross-sectional view of a power semiconductor device in a second embodiment. Fig. 12 is a schematic cross-sectional view of a power semiconductor module in a modification of the second embodiment. Fig. 13 is a schematic cross-sectional view of a power semiconductor device in a third embodiment. Fig. 14 is a schematic cross-sectional view of a power semiconductor module in a modification of the third embodiment. Fig. 15 is a schematic cross-sectional view of a power semiconductor device in a fourth embodiment. Fig. 16 is a schematic cross-sectional view of a power semiconductor module in a modification of the fourth embodiment. Fig. 17 is a block diagram showing the configuration of a power converter system in a fifth embodiment. Description of embodiments

[0014] Embodiments of the present invention are described below. Like configurations are denoted by like reference numerals, and their descriptions will not be repeated. First embodiment

[0015] With reference to Fig. 1, a power semiconductor device 1 in a first embodiment is described. The power semiconductor device 1 includes a conductive circuit pattern 10, a power semiconductor device 15, a sealing member 20, a conductive post 30, a conductive post 33, and a conductive post 36.

[0016] The conductive circuit pattern 10 is formed, for example, from a metal material such as copper or aluminum. The conductive circuit pattern 10 has a first main surface 10a. An insulating substrate (not shown) may be disposed on a main surface 10b of the conductive circuit pattern 10 on the side opposite the first main surface 10a. The insulating substrate may be formed, for example, from an inorganic material (ceramic material) such as alumina, aluminum nitride, or silicon nitride. The insulating substrate may be formed, for example, from a resin material such as an epoxy resin, a polyimide resin, or a cyanate resin containing an inorganic filler (ceramic filler) such as alumina, aluminum nitride, or silicon nitride.

[0017] The power semiconductor device 15 is bonded to a first main surface 10a of a conductive circuit pattern 10 using a conductive bonding element (not shown). The power semiconductor device 15 is mainly formed of silicon or a wide band-gap semiconductor material such as silicon carbide, gallium nitride, or diamond. The conductive bonding element is, for example, solder such as a lead-free solder or a sintered metal fine particle body such as a sintered silver fine particle body, a sintered copper fine particle body, or a sintered nickel fine particle body.

[0018] The power semiconductor device 15 is, for example, an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field-effect transistor (MOSFET), or a freewheeling diode (FWD). The power semiconductor device 15 has, for example, a back electrode 16, a first front electrode 17, and a second front electrode 18. The back electrode 16 is arranged on the back surface of the power semiconductor device 15, which is opposite to the first main surface 10a of the conductive circuit pattern 10. The back electrode 16 is bonded to the conductive circuit pattern 10 by means of a conductive bonding element (not shown). The first front electrode 17 and the second front electrode 18 are formed on the front surface of the power semiconductor device 15, specifically on the side opposite the back surface of the power semiconductor device 15. The power semiconductor device 15 is, for example, an IGBT.The first front electrode 17 is, for example, a source electrode. The second front electrode 18 is, for example, a gate electrode. The back electrode 16 is, for example, a drain electrode.

[0019] The sealing member 20 seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor device 15. The main surface 10b of the conductive circuit pattern 10 on the side opposite the first main surface 10a may be exposed from the sealing member 20 or sealed with the sealing member 20. The sealing member 20 is formed, for example, from a resin sealing material such as epoxy resin. The sealing member 20 has a second main surface 20a facing away from the first main surface 10a of the conductive circuit pattern 10, in the normal direction to the first main surface 10a of the conductive circuit pattern 10.

[0020] The sealing element 20 has holes 22, 23, and 24. The longitudinal direction of the hole 22 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. The hole 22 extends to the second main surface 20a of the sealing element 20. In the plan view of the second main surface 20a of the sealing element 20, the hole 22 exposes a part of the first main surface 10a of the conductive circuit pattern 10 from the sealing element 20. The longitudinal direction of the hole 23 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. The hole 23 extends to the second main surface 20a of the sealing element 20. In the plan view of the second main surface 20a of the sealing element 20, the hole 23 exposes a part of the first front electrode 17 of the power semiconductor device 15 from the sealing element 20. The longitudinal direction of the hole 24 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10.The hole 24 extends to the second main surface 20a of the sealing element 20. In the plan view of the second main surface 20a of the sealing element 20, the hole 24 exposes a part of the second front electrode 18 of the power semiconductor device 15 from the sealing element 20.

[0021] The conductive post 30 fills the hole 22 of the sealing member 20 and is connected to the first main surface 10a of the conductive circuit pattern 10. The longitudinal direction of the conductive post 30 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. An end portion of the conductive post 30 distal from the first main surface 10a of the conductive circuit pattern 10 protrudes from the second main surface 20a of the sealing member 20. The height of the conductive post 30 is, for example, 1.0 mm or more. The height of the conductive support 30 is the length of the conductive support 30 in the longitudinal direction of the conductive support 30. The height of the conductive support 30 may be, without limitation, 100 mm or less, in view of preventing bending and breaking of the conductive support 30 and avoiding mechanical interactions between the conductive support 30 and other components.

[0022] The conductive post 30 includes a metal pin 31 and a conductive bonding element 32. The longitudinal direction of the metal pin 31 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. The metal pin 31 is formed, for example, from a metal material consisting essentially of a single metal element, such as copper, aluminum, gold, or silver. The metal material consisting essentially of a single metal element means a material consisting of the metal material and an unavoidable impurity. The thermal conductivity of the metal pin 31 may be higher than the thermal conductivity of the conductive bonding element 32, and the electrical resistivity of the metal pin 31 may be lower than the electrical resistivity of the conductive bonding element 32.

[0023] The conductive bonding member 32 bonds the metal pin 31 to the conductive circuit pattern 10. The conductive bonding member 32 fills between a pin side surface of the metal pin 31 and a side surface of the hole 22. The conductive bonding member 35 bonds the pin side surface of the metal pin 31 to the side surface of the hole 22 of the sealing member 20. The conductive bonding member 32 is formed from a sintered metal fine particle body, such as a sintered silver fine particle body, a sintered copper fine particle body, or a sintered nickel fine particle body, solder, or a conductive adhesive containing resin and conductive particles dispersed in the resin.

[0024] The conductive post 33 fills the hole 23 of the sealing member 20 and is connected to the power semiconductor device 15 (more precisely, the first front electrode 17). The longitudinal direction of the conductive post 33 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. An end portion of the conductive post 33 distal from the first main surface 10a of the conductive circuit pattern 10 protrudes from the second main surface 20a of the sealing member 20. The height of the conductive post 33 is, for example, 1.0 mm or more. The height of the conductive post 33 is the length of the conductive post 33 in the longitudinal direction of the conductive post 33.The height of the conductive support 33 may be, without limitation, 100 mm or less, in view of preventing bending and breaking of the conductive support 33 and avoiding mechanical interactions between the conductive support 33 and other components.

[0025] The conductive post 33 includes a metal pin 34 and a conductive bonding element 35. The longitudinal direction of the metal pin 34 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. The metal pin 34 is formed of a metal material consisting essentially of a single metal element, such as copper, aluminum, gold, or silver. The metal material consisting essentially of a single metal element means a material consisting of the metal material and an unavoidable impurity. The thermal conductivity of the metal pin 34 may be higher than the thermal conductivity of the conductive bonding element 35, and the electrical resistivity of the metal pin 34 may be lower than the electrical resistivity of the conductive bonding element 35.

[0026] The conductive bonding member 35 bonds the metal pin 34 to the power semiconductor device 15 (more precisely, the first front electrode 17). The conductive bonding member 35 fills the space between a pin side surface of the metal pin 34 and a side surface of the hole 23. The conductive bonding member 35 bonds the pin side surface of the metal pin 34 to the side surface of the hole 23 of the sealing member 20. The conductive bonding member 35 is formed from a sintered metal fine particle body, such as a sintered silver fine particle body, a sintered copper fine particle body, or a sintered nickel fine particle body, solder, or a conductive adhesive containing resin and conductive particles dispersed in the resin.

[0027] The conductive post 36 fills the hole 24 of the sealing member 20 and is connected to the power semiconductor device 15 (more precisely, the second front electrode 18). The longitudinal direction of the conductive post 36 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. An end portion of the conductive post 36 distal from the first main surface 10a of the conductive circuit pattern 10 protrudes from the second main surface 20a of the sealing member 20. The height of the conductive post 36 is, for example, 1.0 mm or more. The height of the conductive post 36 is the length of the conductive post 36 in the longitudinal direction of the conductive post 36.The height of the conductive support 36 may be, without limitation, 100 mm or less, in view of preventing bending and breaking of the conductive support 36 and avoiding mechanical interactions between the conductive support 36 and other components.

[0028] The conductive post 36 includes a metal pin 37 and a conductive bonding element 38. The longitudinal direction of the metal pin 37 is, for example, the normal direction to the first main surface 10a of the conductive circuit pattern 10. The metal pin 37 is formed of a metal material consisting essentially of a single metal element, such as copper, aluminum, gold, or silver. The metal material consisting essentially of a single metal element means a material composed of the metal material and an unavoidable impurity. The thermal conductivity of the metal pin 37 may be higher than the thermal conductivity of the conductive bonding element 38, and the electrical resistivity of the metal pin 37 may be lower than the electrical resistivity of the conductive bonding element 38.

[0029] The conductive bonding element 38 bonds the metal pin 37 to the power semiconductor device 15 (more precisely, the second front electrode 18). The conductive bonding element 38 fills the space between a pin side surface of the metal pin 37 and a side surface of the hole 24. The conductive bonding element 38 bonds the pin side surface of the metal pin 37 to the side surface of the hole 24 of the sealing element 20. The conductive bonding element 38 is formed from a sintered metal fine particle body, such as a sintered silver fine particle body, a sintered copper fine particle body, or a sintered nickel fine particle body, solder, or a conductive adhesive containing resin and conductive particles dispersed in the resin.

[0030] During operation of the power semiconductor device 1, the first current flowing through the metal pin 31 and the second current flowing through the metal pin 34 are each greater than the third current flowing through the metal pin 37. Therefore, the first cross-sectional area of ​​the metal pin 31 and the second cross-sectional area of ​​the metal pin 34 are each greater than the third cross-sectional area of ​​the metal pin 37. The first cross-sectional area of ​​the metal pin 31 is the area of ​​the metal pin 31 in the cross-section perpendicular to the longitudinal direction of the metal pin 31. The second cross-sectional area of ​​the metal pin 34 is the area of ​​the metal pin 34 in the cross-section perpendicular to the longitudinal direction of the metal pin 34. The third cross-sectional area of ​​the metal pin 37 is the area of ​​the metal pin 37 in the cross-section perpendicular to the longitudinal direction of the metal pin 37.

[0031] With reference to Fig. 1 to Fig. 6, a first example of a method for manufacturing the power semiconductor device 1 in the present embodiment will be described.

[0032] As in Fig. As illustrated in FIG. 2, the first example of the method for manufacturing the power semiconductor device 1 in the present embodiment includes bonding the power semiconductor device 15 to the first main surface 10a of the conductive circuit pattern 10. More specifically, the power semiconductor device 15 is bonded to the first main surface 10a of the conductive circuit pattern 10 using a conductive bonding member (not shown). The conductive bonding member is, for example, solder such as a lead-free solder or a sintered metal fine particle body such as a sintered silver fine particle body, a sintered copper fine particle body, or a sintered nickel fine particle body.

[0033] As in Fig. 3 and Fig. As shown in Figure 4, the first example of the method for manufacturing the power semiconductor device 1 in the present embodiment includes disposing the sealing member 20. The sealing member 20 seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor device 15. The sealing member 20 has holes 22, 23, 24. The sealing member 20 is formed, for example, by transfer molding.

[0034] More precisely: As in Fig. As illustrated in Figure 3, a mold 40 includes a fixed part 41 and a movable part 42. The conductive circuit pattern 10, to which the power semiconductor device 15 is bonded, is placed on the fixed part 41. The movable mold 42 is moved to close the mold 40. The movable mold 42 has mold pins 43, 44, and 45. The mold pin 43 is arranged corresponding to the hole 22 of the sealing member 20. The mold pin 44 is arranged corresponding to the hole 23 of the sealing member 20. The mold pin 45 is arranged corresponding to the hole 24 of the sealing member 20. The conductive circuit pattern 10, to which the power semiconductor device 15 is bonded, is placed in the cavity of the mold 40, which is formed from the movable part 42 and the fixed part 41. As shown in Fig. As shown in Figure 4, a resin sealing material is injected into the cavity of the mold 40. The sealing resin material is cured, thus obtaining the sealing member 20. The power semiconductor device 15, the conductive circuit pattern 10, and the sealing member 20 are removed from the mold 40.

[0035] As in Fig. 5 and Fig. As shown in FIG. 6, the first example of the method for manufacturing the power semiconductor device 1 in the present embodiment includes forming the conductive post 30 in the hole 22 of the sealing member 20, forming the conductive post 33 in the hole 23 of the sealing member 20, and forming the conductive post 36 in the hole 24 of the sealing member 20. The conductive post 30 fills the hole 22 of the sealing member 20 and is connected to the first main surface 10a of the conductive circuit pattern 10. The conductive post 33 fills the hole 23 of the sealing member 20 and is connected to the power semiconductor device 15 (more specifically, the first front electrode 17). The conductive support 36 fills the hole 24 of the sealing element 20 and is connected to the power semiconductor device 15 (more precisely, the second front electrode 18).The formation of the conductive support 30 in the hole 22 of the sealing element 20, the formation of the conductive support 33 in the hole 23 of the sealing element 20 and the formation of the conductive support 36 in the hole 24 of the sealing element 20 can be carried out simultaneously.

[0036] The conductive post 30 includes the metal pin 31 and the conductive bonding element 32. The conductive bonding element 32 bonds the metal pin 31 to the conductive circuit pattern 10. The conductive bonding element 32 fills the space between a pin side surface of the metal pin 31 and a side surface of the hole 22. The conductive bonding element 32 bonds the pin side surface of the metal pin 31 to the side surface of the hole 22 of the sealing member 20. The conductive post 33 includes the metal pin 34 and the conductive bonding element 35. The conductive bonding element 35 bonds the metal pin 34 to the power semiconductor device 15 (more specifically, the first front electrode 17). The conductive bonding element 35 fills the space between a pin side surface of the metal pin 34 and a side surface of the hole 23. The conductive bonding element 35 bonds the pin side surface of the metal pin 34 to the side surface of the hole 23 of the sealing element 20.The conductive post 36 includes the metal pin 37 and the conductive bonding element 38. The conductive bonding element 38 bonds the metal pin 37 to the power semiconductor device 15 (more precisely, the second front electrode 18). The conductive bonding element 38 fills the space between a pin side surface of the metal pin 37 and a side surface of the hole 24. The conductive bonding element 38 bonds the pin side surface of the metal pin 37 to the side surface of the hole 24 of the sealing element 20.

[0037] More specifically, the conductive supports 30, 33, 36 are formed in the holes 22, 23, 24 by the following steps. As shown in Fig. As shown in Figure 5, a conductive bond precursor 32p in paste or powder form is disposed in hole 22. A conductive bond precursor 35p in paste or powder form is disposed in hole 23. A conductive bond precursor 38p in paste or powder form is disposed in hole 24. The conductive bond precursors 32p, 35p, 38p are, for example, pastes containing fine metal particles or conductive particles, powders made of fine metal particles or conductive particles, or solder powder.

[0038] As in Fig. As shown in Figure 6, the metal pin 31 is brought into contact with the conductive bond precursor 32p. The conductive bond precursor 32p is disposed between the metal pin 31 and the conductive circuit pattern 10, and between the pin-side surface of the metal pin 31 and the side surface of the hole 22. The metal pin 34 is brought into contact with the conductive bond precursor 35p. The conductive bond precursor 35p is disposed between the metal pin 34 and the power semiconductor device 15 (more precisely, the first front electrode 17) and between the pin-side surface of the metal pin 34 and the side surface of the hole 23. The metal pin 37 is brought into contact with the conductive bond precursor 38p. The conductive bond precursor 38p is arranged between the metal pin 37 and the power semiconductor device 15 (more precisely, the second front electrode 18) and between the pin side surface of the metal pin 37 and the side surface of the hole 24.

[0039] When the metal pins 31, 34, 37 are brought into contact with the conductive bond precursors 32p, 35p, 38p, the conductive bond precursors 32p, 35p, 38p are also formed on the portions of the metal pins 31, 34, 37 on the side distal from the conductive circuit pattern 10 with respect to the second main surface 20a of the sealing member 20. More specifically, a mask (not shown) is disposed on a front surface of the second main surface 20a of the sealing member 20. The mask has a first opening, a second opening, and a third opening. The first opening has the same diameter as that of the hole 22 and is communicatively connected to the hole 22. The second opening has the same diameter as that of the hole 23 and is communicatively connected to the hole 23. The third opening has the same diameter as that of hole 24 and is communicating with hole 24.When the metal pins 31, 34, 37 are brought into contact with the conductive bond precursors 32p, 35p, 38p, the conductive bond precursors 32p, 35p, 38p overflowing from the holes 22, 23, 24 are also formed on the portions of the metal pins 31, 34, 37 on the side distal from the conductive circuit pattern 10 with respect to the second main surface 20a of the sealing member 20. The mask is then removed.

[0040] The conductive bond precursor 32p is heated and cooled so that the conductive bond precursor 32p becomes the conductive bond element 32. The conductive bond precursor 35p is heated and cooled so that the conductive bond precursor 35p becomes the conductive bond element 35. The conductive bond precursor 38p is heated and cooled so that the conductive bond precursor 38p becomes the conductive bond element 38. The conductive bond precursors 32p, 35p, 38p can be heated by heating all the elements constituting the power semiconductor device 1, including the conductive circuit pattern 10, the power semiconductor device 15, and the sealing element 20. When current is supplied to the metal pins 31, 34, 37, heat is generated in the metal pins 31, 34, 37. This heat can be used to heat the conductive bond precursors 32p, 35p, 38p.

[0041] With reference to Fig. 1 to Fig. 4 and Fig. 7, a second example of the method for manufacturing the power semiconductor device 1 in the present embodiment will be described. The second example of the method for manufacturing the power semiconductor device 1 in the present embodiment includes steps similar to those in the first example of the method for manufacturing the power semiconductor device 1 in the present embodiment (the steps shown in Fig. 2 to Fig. 4), and it differs mainly in the following points.

[0042] More specifically, the conductive supports 30, 33, 36 are formed in the holes 22, 23, 24 by the following steps. As shown in Fig. As shown in Figure 7, a conductive bond precursor 32q is disposed in hole 22. A conductive bond precursor 35q is disposed in hole 23. A conductive bond precursor 38q is disposed in hole 24. The conductive bond precursors 32q, 35q, 38q are, for example, a solder plate or a solder rod.

[0043] The conductive bond precursors 32q, 35q, 38q are heated to melt the conductive bond precursors 32q, 35q, 38q. The conductive bond precursors 32q, 35q, 38q can be heated by heating all the elements constituting the power semiconductor device 1, including the conductive circuit pattern 10, the power semiconductor device 15, and the sealing member 20.

[0044] The metal pin 31 is immersed in the molten conductive bond precursor 32q. The metal pin 34 is immersed in the molten conductive bond precursor 35q. The metal pin 37 is immersed in the molten conductive bond precursor 38q. The molten conductive bond precursor 32q is disposed between the metal pin 31 and the conductive circuit pattern 10, and between the pin side surface of the metal pin 31 and the side surface of the hole 22. The molten conductive bond precursor 35q is disposed between the metal pin 34 and the power semiconductor device 15 (more precisely, the first front electrode 17), and between the pin side surface of the metal pin 34 and the side surface of the hole 23.The molten conductive bond precursor 38q is disposed between the metal pin 37 and the power semiconductor device 15 (more precisely, the second front electrode 18), and between the pin side surface of the metal pin 37 and the side surface of the hole 24. The molten conductive bond precursors 32q, 35q, 38q are cooled to become the conductive bond elements 32, 35, 38.

[0045] When the metal pins 31, 34, 37 are brought into contact with the conductive bond precursors 32p, 35p, 38p, the conductive bond precursors 32p, 35p, 38p are also formed on the portions of the metal pins 31, 34, 37 on the side distal from the conductive circuit pattern 10 with respect to the second main surface 20a of the sealing member 20. More specifically, a mask (not shown) is disposed on a front surface of the second main surface 20a of the sealing member 20. The mask has a first opening, a second opening, and a third opening. The first opening has the same diameter as that of the hole 22 and is communicatively connected to the hole 22. The second opening has the same diameter as that of the hole 23 and is communicatively connected to the hole 23. The third opening has the same diameter as that of hole 24 and is communicating with hole 24.When the metal pins 31, 34, 37 are brought into contact with the molten conductive bond precursors 32p, 35p, 38p, the conductive bond precursors 32p, 35p, 38p overflowing from the holes 22, 23, 24 are also formed on the portions of the metal pins 31, 34, 37 on the side distal from the conductive circuit pattern 10 with respect to the second main surface 20a of the sealing member 20. The molten conductive bond precursors 32q, 35q, 38q are cooled to become the conductive bond elements 32, 35, 38. The mask is then removed.

[0046] With reference to Fig. 1 to Fig. 4 and Fig. 8, a third example of the method for manufacturing the power semiconductor device 1 in the present embodiment will be described. The third example of the method for manufacturing the power semiconductor device 1 in the present embodiment includes steps similar to those in the first example of the method for manufacturing the power semiconductor device 1 in the present embodiment (the steps shown in Fig. 2 to Fig. 4) are shown), and it differs mainly in the following points.

[0047] More specifically, the conductive supports 30, 33, 36 are formed in the holes 22, 23, 24 by the following steps. As shown in Fig. As illustrated in Figure 8, a conductive bond precursor 32r is applied to the metal pin 31 by coating or vapor deposition. A conductive bond precursor 35r is applied to the metal pin 34 by coating or vapor deposition. A conductive bond precursor 38r is applied to the metal pin 37 by coating or vapor deposition. The conductive bond precursors 32r, 35r, 38r are, for example, conductive pastes containing resin and conductive particles (e.g., silver particles, copper particles, nickel particles, or gold particles) dispersed in the resin, or a solder coating.

[0048] The metal pin 31, on which the conductive bond precursor 32r is applied, is inserted into the hole 22. The metal pin 34, on which the conductive bond precursor 35r is applied, is inserted into the hole 23. The metal pin 37, on which the conductive bond precursor 38r is applied, is inserted into the hole 24. The conductive bond precursor 32r is arranged between the metal pin 31 and the conductive circuit pattern 10, and between the pin side surface of the metal pin 31 and the side surface of the hole 22. The conductive bond precursor 35p is arranged between the metal pin 34 and the power semiconductor device 15 (more precisely, the first front electrode 17), and between the pin side surface of the metal pin 34 and the side surface of the hole 23.The conductive bond precursor 38r is arranged between the metal pin 37 and the power semiconductor device 15 (more precisely, the second front electrode 18) and between the pin side surface of the metal pin 37 and the side surface of the hole 24.

[0049] The conductive bond precursors 32r, 35r, 38r are heated and cooled so that the conductive bond precursors 32r, 35r, 38r become the conductive bonding elements 32, 35, 38. The conductive bond precursors 32r, 35r, 38r can be heated by heating all the elements constituting the power semiconductor device 1, including the conductive circuit pattern 10, the power semiconductor device 15, and the sealing element 20. When current is supplied to the metal pins 31, 34, 37, heat is generated in the metal pins 31, 34, 37. This heat can be used to heat the conductive bond precursors 32r, 35r, 38r.

[0050] With reference to Fig. 9, a power semiconductor module 2 in the present embodiment is described. The power semiconductor device 2 includes a power semiconductor device 1 and a circuit board 50.

[0051] The circuit board 50 includes an insulating substrate 51 and wiring 52. The insulating substrate 51 is, for example, a glass-epoxy substrate or a glass composite substrate. The glass-epoxy substrate is formed, for example, by heat-curing a glass fabric impregnated with epoxy resin. The glass composite substrate is formed, for example, by heat-curing a glass mat impregnated with epoxy resin. The insulating substrate 51 has a third main surface 51a facing the second main surface 20a of the sealing element 20, and a fourth main surface 51b on the side opposite the third main surface 51a.

[0052] The wiring 52 is arranged, for example, on a fourth main surface 51b of the insulating substrate 51. The wiring 52 may be arranged on the third main surface 51a of the insulating substrate 51, or it may be embedded in the insulating substrate 51. The wiring 52 is, for example, a metal layer such as a copper foil.

[0053] The wiring 52 has a first wiring region 53, a second wiring region 54, and a third wiring region 55. The first wiring region 53, the second wiring region 54, and the third wiring region 55 are spaced apart from one another. The circuit board 50 is equipped with an electronic component (not shown) that is connected to the wiring 52. The electronic component is, for example, a resistor, a capacitor, or a converter.

[0054] The power semiconductor device 1 is mounted on the circuit board 50. More specifically, the conductive post 30 is fixed to the first wiring region 53, for example, using the conductive bonding element 32. The conductive post 33 is fixed to the second wiring region 54, for example, using the conductive bonding element 35. The conductive post 36 is fixed to the third wiring region 55, for example, using the conductive bonding element 38.

[0055] With reference to Fig. 10, a power semiconductor module 2a in a modification of the present embodiment will be described. The power semiconductor module 2a includes a power semiconductor device 1a and a circuit board 50a in a modification of the present embodiment. In the circuit board 50a, the wiring 52 is arranged on the third main surface 51a of the insulating substrate 51. In the power semiconductor device 1a, an end portion of the conductive post 30 distal from the first main surface 10a of the conductive circuit pattern 10 is flush with the second main surface 20a of the sealing member 20. An end portion of the conductive post 33 distal from the first main surface 10a of the conductive circuit pattern 10 is flush with the second main surface 20a of the sealing member 20. An end portion of the conductive post 36 distal from the first main surface 10a of the conductive circuit pattern 10 is flush with the second main surface 20a of the sealing member 20.distal from the first main surface 10a of the conductive circuit pattern 10 is flush with the second main surface 20a of the sealing member 20. The power semiconductor device 1a is surface-mounted on the circuit board 50a.

[0056] The effects of the power semiconductor device 1, 1a in the present embodiment will be described.

[0057] The power semiconductor device 1, 1a in the present embodiment includes the conductive circuit pattern 10, the power semiconductor device 15, the sealing member 20, a first conductive post (conductive post 30), and a second conductive post (conductive post 33 or conductive post 36). The conductive circuit pattern 10 has the first main surface 10a. The power semiconductor device 15 is bonded to the first main surface 10a of the conductive circuit pattern 10. The sealing member 20 seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor device 15. The first conductive post fills a first hole (hole 22) formed in the sealing member 20 and is connected to the first main surface 10a of the conductive circuit pattern 10.The second conductive post fills a second hole (hole 23 or hole 24) formed in the sealing member 20 and is connected to the power semiconductor device 15. The first conductive post includes a first metal pin (metal pin 31) and a first conductive bonding element (conductive bonding element 32). The second conductive post includes a second metal pin (metal pin 34 or metal pin 37) and a second conductive bonding element (conductive bonding element 35 or conductive bonding element 38). The first conductive bonding element fills between a first pin side surface of the first metal pin and a first side surface of the first hole and bonds the first metal pin to the conductive circuit pattern 10. The second conductive bonding element fills between a second pin side surface of the second metal pin and a second side surface of the second hole and bonds the second metal pin to the power semiconductor device 15.

[0058] The first conductive post (conductive post 30) includes the first metal pin (metal pin 31), and the second conductive post (conductive post 33 or conductive post 36) includes the second metal pin (metal pin 34 or metal pin 37). This configuration can increase a first height of the first conductive post and a second height of the second conductive post. The first metal pin is firmly bonded to the conductive circuit pattern 10 and the sealing member 20 by means of the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor device 15 and the sealing member 20 by means of the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). The reliability of the power semiconductor device 1, 1a can be improved.

[0059] Compared with soldering wires from the conductive circuit pattern 10 and the power semiconductor device 15, the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) enable a size reduction of the power semiconductor device 1, 1a.

[0060] In the power semiconductor device 1, 1a in the present embodiment, the first metal pin (metal pin 31) and the second metal pin (metal pin 34 or metal pin 37) are formed of copper, aluminum, gold, or silver. Therefore, the first metal pin and the second metal pin have high thermal conductivity and low electrical resistivity. The heat generated in the power semiconductor device 15 can be effectively dissipated. The reliability of the power semiconductor device 1, 1a can be improved. More current can be supplied to the power semiconductor device 15. The electrical capacity of the power semiconductor device 1, 1a can be increased.

[0061] In the power semiconductor device 1, 1a in the present embodiment, the first conductive bonding element (conductive bonding element 32) and the second conductive bonding element (conductive bonding element 35 or conductive bonding element 38) are formed of solder or a sintered metal fine particle body. Therefore, the first metal pin (metal pin 31) is bonded to the conductive circuit pattern 10 and the sealing element 20 by means of the first conductive bonding element. The second metal pin (conductive bonding element 32 or conductive bonding element 35) is bonded to the power semiconductor device 15 and the sealing element 20 by means of the second conductive bonding element. The reliability of the power semiconductor device 1, 1a can be improved.

[0062] In the power semiconductor device 1 in the present embodiment, the sealing member 20 has the second main surface 20a away from the first main surface 10a of the conductive circuit pattern 10 in a direction normal to the first main surface 10a of the conductive circuit pattern 10. A first end portion of the first conductive post (conductive post 30) and a second end portion of the second conductive post (conductive post 33 or conductive post 36) distal from the first main surface 10a of the conductive circuit pattern 10 protrude from the second main surface 20a of the sealing member 20.

[0063] With this configuration, when the power semiconductor device 1 including the power semiconductor device 15 is mounted on the circuit board 50 mounted with an electronic component, the distance between the power semiconductor device 15 and the electronic component can be increased. The electronic component can be protected from the heat generated in the power semiconductor device 15. The power semiconductor device 1 can be applied to more electrical products.

[0064] In the power semiconductor device 1a in the present embodiment, the sealing member 20 has the second main surface 20a away from the first main surface 10a in a direction normal to the first main surface 10a of the conductive circuit pattern 10. A first end portion of the first conductive post (conductive post 30) and a second end portion of the second conductive post (conductive post 33 or conductive post 36) distal from the first main surface 10a of the conductive circuit pattern 10 are flush with the second main surface 20a of the sealing member 20.

[0065] With this configuration, the power semiconductor device 1a including the power semiconductor device 15 can be surface-mounted on the circuit board 50a. Mounting the power semiconductor device 1a on the circuit board 50a becomes easy.

[0066] The method for manufacturing the power semiconductor device 1, 1a in the present embodiment includes bonding the power semiconductor device 15 to the first main surface 10a of the conductive circuit pattern 10; and disposing the sealing member 20 that seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor device 15 and has a first hole (hole 22) and a second hole (hole 23 or hole 24). The method for manufacturing the power semiconductor device 1, 1a in the present embodiment includes forming a first conductive post (conductive post 30) in the first hole of the sealing member 20; and forming a second conductive post (conductive post 33 or conductive post 36) in the second hole of the sealing member 20.The disposition of the sealing member 20 includes placing the conductive circuit pattern 10, to which the power semiconductor device 15 is bonded, into a cavity of the mold 40 having a first mold pin (molding pin 43) and a second mold pin (molding pin 44 or mold pin 45), injecting a sealing resin material into the cavity of the mold 40, and curing the sealing resin material to obtain the sealing member 20. The first mold pin is disposed corresponding to the first hole of the sealing member 20. The second mold pin is disposed corresponding to the second hole of the sealing member 20.

[0067] The first conductive post (conductive post 30) fills the first hole (hole 22) of the sealing member 20 and is connected to the first main surface 10a of the conductive circuit pattern 10. The second conductive post (conductive post 33 or conductive post 36) fills the second hole (hole 23 or hole 24) of the sealing member 20 and is connected to the power semiconductor device 15. The first conductive post includes a first metal pin (metal pin 31) and a first conductive bonding element (conductive bonding element 32). The second conductive post includes a second metal pin (metal pin 34 or metal pin 37) and a second conductive bonding element (conductive bonding element 35 or conductive bonding element 38). The first conductive bonding element fills between a first pin side surface of the first metal pin and a first side surface of the first hole and bonds the first metal pin to the conductive circuit pattern 10.The second conductive bonding element fills between a second pin side surface of the second metal pin and a second side surface of the second hole and bonds the second metal pin to the power semiconductor device 15.

[0068] The first conductive post (conductive post 30) includes the first metal pin (metal pin 31), and the second conductive post (conductive post 33 or conductive post 36) includes the second metal pin (metal pin 34 or metal pin 37). With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a higher first conductive post and a higher second conductive post can be formed. The first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 by means of the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor device 15 and the sealing member 20 by means of the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38).With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a power semiconductor device 1, 1a with improved reliability can be obtained.

[0069] In the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, after the sealing member 20 is arranged with the first hole (hole 22) and the second hole (hole 23 or hole 24), the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) are formed. The cross-sectional area (or diameter) of the first conductive post is predetermined by the cross-sectional area (or diameter) of the first hole. The first conductive post does not extend beyond the cross-sectional area (or diameter) of the first hole in the in-plane direction parallel to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area (or diameter) of the second conductive post is predetermined by the cross-sectional area (or diameter) of the second hole.The second conductive post does not extend beyond the cross-sectional area (or diameter) of the second hole in the in-plane direction parallel to the first main surface 10a of the conductive circuit pattern 10. With this configuration, the distance between the first conductive post and the second conductive post can be reduced. With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, the power semiconductor device 1, 1a can be obtained with a reduced size.

[0070] Compared with soldering wires from the conductive circuit pattern 10 and the power semiconductor device 15, the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) can reduce the size of the power semiconductor device 1, 1a. With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, the power semiconductor device 1, 1a can be obtained with a reduced size.

[0071] In the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, forming the first conductive post (conductive post 30) in the first hole (hole 22) includes: disposing a first conductive bonding precursor (conductive bonding precursor 32p) in paste or powder form in the first hole, bringing the first metal pin (metal pin 31) into contact with the first conductive bonding precursor so that the first conductive bonding precursor is disposed between the first metal pin and the conductive circuit pattern 10 and between the first pin side surface of the first metal pin and the first side surface of the first hole, and heating and cooling the first conductive bonding precursor so that the first conductive bonding precursor becomes the first conductive bonding element (conductive bonding element 32).

[0072] Forming the second conductive post (conductive post 33 or conductive post 36) in the second hole (hole 23 or hole 24) comprises the following: disposing a second conductive bond precursor (conductive bond precursor 35p or conductive bond precursor 38p) in paste or powder form in the second hole, bringing the second metal pin (metal pin 34 or metal pin 37) into contact with the second conductive bond precursor such that the second conductive bond precursor is disposed between the second metal pin and the power semiconductor device 15 and between the second pin side surface of the second metal pin and the second side surface of the second hole, and heating and cooling the second conductive bond precursor such that the second conductive bond precursor becomes the second conductive bonding element (conductive bonding element 35 or conductive bonding element 38). becomes.

[0073] The first conductive post (conductive post 30) includes the first metal pin (metal pin 31), and the second conductive post (conductive post 33 or conductive post 36) includes the second metal pin (metal pin 34 or metal pin 37). With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a higher first conductive post and a higher second conductive post can be formed. The first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 by means of the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor device 15 and the sealing member 20 by means of the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38).With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, the reliability of the power semiconductor device 1, 1a can be improved. With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, the power semiconductor device 1, 1a can be obtained with a reduced size.

[0074] In the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, forming the first conductive post (conductive post 30) in the first hole (hole 22) includes: disposing a first conductive bonding precursor (conductive bonding precursor 32q) in the first hole, heating the first conductive bonding precursor so that the first conductive bonding precursor melts, immersing the first metal pin (metal pin 31) in the molten first conductive bonding precursor so that the molten first conductive bonding precursor is disposed between the first metal pin and the conductive circuit pattern 10 and between the first pin side surface of the first metal pin and the first side surface of the first hole, and cooling the first conductive bonding precursor so that the first conductive bonding precursor becomes the first conductive bonding element (conductive bonding element 32).

[0075] Forming the second conductive post (conductive post 33 or conductive post 36) in the second hole (hole 23 or hole 24) comprises: arranging a second conductive bond precursor (conductive bond precursor 35q or conductive bond precursor 38q) in the second hole, heating the second conductive bond precursor so that the second conductive bond precursor melts, immersing the second metal pin (metal pin 34 or metal pin 37) in the molten second conductive bond precursor so that the molten second conductive bond precursor is arranged between the second metal pin and the power semiconductor device 15 and between the second pin side surface of the second metal pin and the second side surface of the second hole, and cooling the second conductive bond precursor so that the second conductive bond precursor becomes the second conductive bonding element (conductive bonding element 35 or conductive bonding element 38).

[0076] The first conductive post (conductive post 30) includes the first metal pin (metal pin 31), and the second conductive post (conductive post 33 or conductive post 36) includes the second metal pin (metal pin 34 or metal pin 37). With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a higher first conductive post and a higher second conductive post can be formed. The first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 by means of the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor device 15 and the sealing member 20 by means of the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38).With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a power semiconductor device 1, 1a with improved reliability can be obtained. With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, the power semiconductor device 1, 1a with a reduced size can be obtained.

[0077] In the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, forming the first conductive post (conductive post 30) in the first hole (hole 22) includes applying a first conductive bonding precursor (conductive bonding precursor 32r) to the first metal pin (metal pin 31), inserting the first metal pin, to which the first conductive bonding precursor is applied, into the first hole so that the first conductive bonding precursor is disposed between the first metal pin and the conductive circuit pattern 10 and between the first pin side surface of the first metal pin and the first side surface of the first hole, and heating and cooling the first conductive bonding precursor so that the first conductive bonding precursor becomes the first conductive bonding element (conductive bonding element 32).

[0078] Forming the second conductive post (conductive post 33 or conductive post 36) in the second hole (hole 23 or hole 24) comprises applying a second conductive bond precursor (conductive bond precursor 35r or conductive bond precursor 38r) to the second metal pin (metal pin 34 or metal pin 37), inserting the second metal pin, to which the second conductive bond precursor is applied, into the second hole so that the second conductive bond precursor is arranged between the second metal pin and the power semiconductor device 15 and between the second pin side surface of the second metal pin and the second side surface of the second hole, and heating and cooling the second conductive bond precursor so that the second conductive bond precursor is bonded to the second conductive bonding element (conductive bonding element 35 or conductive bonding element 38).

[0079] The first conductive post (conductive post 30) includes the first metal pin (metal pin 31), and the second conductive post (conductive post 33 or conductive post 36) includes the second metal pin (metal pin 34 or metal pin 37). With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a higher first conductive post and a higher second conductive post can be formed. The first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 by means of the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor device 15 and the sealing member 20 by means of the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38).With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a power semiconductor device 1, 1a with improved reliability can be obtained. With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, the power semiconductor device 1, 1a with a reduced size can be obtained.

[0080] In the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, the first conductive bond precursor (conductive bond precursor 32p, 32r) is heated using heat generated in the first metal pin (metal pin 31). The second conductive bond precursor (conductive bond precursor 35p, 35r or conductive bond precursor 38p, 38r) is heated using heat generated in the second metal pin (metal pin 34 or metal pin 37).

[0081] The first conductive bond precursor (conductive bond precursor 32p, 32r) and the second conductive bond precursor (conductive bond precursor 35p, 35r or conductive bond precursor 38p, 38r) can therefore be intensively heated. Thermal damage to a component constituting the power semiconductor device 1, 1a, such as the power semiconductor device 15 or the sealing member 20, can be reduced. With the method for manufacturing the power semiconductor device 1, 1a in the present embodiment, a power semiconductor device 1, 1a with improved reliability can be obtained. Second embodiment

[0082] With reference to Fig. 11, a power semiconductor device 1b in a second embodiment will be described. The power semiconductor device 1b in the present embodiment has a configuration similar to that of the power semiconductor device 1 in the first embodiment, and a method for manufacturing the power semiconductor device 1b in the present embodiment includes steps similar to those in the method for manufacturing the power semiconductor device 1 in the first embodiment, and differs mainly in the following points.

[0083] In the power semiconductor device 1b and the method for manufacturing the same in the present embodiment, the cross section of the metal pin 31 along the longitudinal direction of the metal pin 31 has a T-shape. The metal pin 31 includes a body 61 and a head 62 located at the distal end of the body 61 with respect to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 62 is larger than the cross-sectional area of ​​the body 61. The cross-sectional area of ​​the body 61 is the area of ​​the body 61 in the cross section perpendicular to the longitudinal direction of the metal pin 31. The cross-sectional area of ​​the head 62 is the area of ​​the head 62 in the cross section perpendicular to the longitudinal direction of the metal pin 31.

[0084] The cross-section of the metal pin 34 along the longitudinal direction of the metal pin 34 has a T-shape. The metal pin 34 has a body 64 and a head 65 located at the distal end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 65 is larger than the cross-sectional area of ​​the body 64. The cross-sectional area of ​​the body 64 is the area of ​​the body 64 in the cross-section perpendicular to the longitudinal direction of the metal pin 34. The cross-sectional area of ​​the head 65 is the area of ​​the head 65 in the cross-section perpendicular to the longitudinal direction of the metal pin 34.

[0085] The cross-section of the metal pin 37 along the longitudinal direction of the metal pin 37 has a T-shape. The metal pin 37 has a body 67 and a head 68 located at the distal end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 68 is larger than the cross-sectional area of ​​the body 67. The cross-sectional area of ​​the body 67 is the area of ​​the body 67 in the cross-section perpendicular to the longitudinal direction of the metal pin 37. The cross-sectional area of ​​the head 68 is the area of ​​the head 68 in the cross-section perpendicular to the longitudinal direction of the metal pin 37.

[0086] As in Fig. As illustrated in Figure 12, in a power semiconductor device 1c and a method for manufacturing the same in a modification of the present embodiment, the cross section of the metal pin 31 along the longitudinal direction of the metal pin 31 has an I-shape. The metal pin 31 includes a body 61, a head 62 located at the distal end of the body 61 with respect to the first main surface 10a of the conductive circuit pattern 10, and a leg 63 located at the proximal end of the body 61 with respect to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 62 is larger than the cross-sectional area of ​​the body 61. The cross-sectional area of ​​the leg 63 is larger than the cross-sectional area of ​​the body 61. The cross-sectional area of ​​the leg 63 is the area of ​​the leg 63 in the cross section perpendicular to the longitudinal direction of the metal pin 31.

[0087] The cross-section of the metal pin 34 along the longitudinal direction of the metal pin 34 has an I-shape. The metal pin 34 includes a body 64, a head 65 located at the distal end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10, and a leg 66 located at the proximal end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 65 is larger than the cross-sectional area of ​​the body 64. The cross-sectional area of ​​the leg 66 is larger than the cross-sectional area of ​​the body 64. The cross-sectional area of ​​the leg 66 is the area of ​​the leg 66 in the cross-section perpendicular to the longitudinal direction of the metal pin 34.

[0088] The cross-section of the metal pin 37 along the longitudinal direction of the metal pin 37 has an I-shape. The metal pin 37 includes a body 67, a head 68 located at the distal end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10, and a leg 69 located at the proximal end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 68 is larger than the cross-sectional area of ​​the body 67. The cross-sectional area of ​​the leg 69 is larger than the cross-sectional area of ​​the body 67. The cross-sectional area of ​​the leg 69 is the area of ​​the leg 69 in the cross-section perpendicular to the longitudinal direction of the metal pin 37.

[0089] The power semiconductor device 1b, 1c and the method of manufacturing the same in the present embodiment achieve the following effects in addition to the effects achieved by the power semiconductor device 1 and the method of manufacturing the same in the first embodiment.

[0090] In the power semiconductor device 1b, 1c and the method for manufacturing the same in the present embodiment, the first cross section of the first metal pin (metal pin 31) along the first longitudinal direction of the first metal pin and the cross section of the second metal pin (metal pin 34 or metal pin 37) along the second longitudinal direction of the second metal pin have a T-shape or an I-shape.

[0091] With this configuration, the following applies: When the first metal pin (metal pin 31) is inserted into the first hole (hole 22), the first metal pin crushes voids formed in the first conductive bond precursor (conductive bond precursor 32p, 32q, see Fig. 5 to Fig. 7) arranged in the first hole. The first metal pin is bonded even more firmly to the conductive circuit pattern 10 and the sealing element 20. When the second metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), the second metal pin crushes voids formed in the second conductive bond precursor (conductive bond precursor 35p, 35q or conductive bond precursor 38p, 38q, see Fig. 5 to Fig. 7) are provided, which is arranged in the second hole. The second metal pin is bonded even more tightly to the power semiconductor device 15 and the sealing element 20. The reliability of the power semiconductor device 1b, 1c can be improved. Third embodiment

[0092] With reference to Fig. 13, a power semiconductor device 1d in a third embodiment will be described. The power semiconductor device 1d in the present embodiment has a configuration similar to that of the power semiconductor device 1 in the first embodiment, and a method for manufacturing the power semiconductor device 1d in the present embodiment includes steps similar to those in the method for manufacturing the power semiconductor device 1 in the first embodiment, and differs mainly in the following points.

[0093] In the power semiconductor device 1d and the method for manufacturing the same in the present embodiment, the cross section of the metal pin 31 has a tapered shape along the longitudinal direction of the metal pin 31, narrowing toward the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​one end of the metal pin 31 distal from the first main surface 10a of the conductive circuit pattern 10 is larger than the cross-sectional area of ​​the other end of the metal pin 31 proximal to the first main surface 10a of the conductive circuit pattern 10.

[0094] The cross-section of the metal pin 34 along the longitudinal direction of the metal pin 34 has a conical shape that narrows toward the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​one end of the metal pin 34 distal from the first main surface 10a (or power semiconductor device 15) of the conductive circuit pattern 10 is larger than the cross-sectional area of ​​the other end of the metal pin 34 proximal to the first main surface 10a (or power semiconductor device 15) of the conductive circuit pattern 10.

[0095] The cross-section of the metal pin 37 along the longitudinal direction of the metal pin 37 has a conical shape that becomes narrower toward the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​one end of the metal pin 37 distal from the first main surface 10a (or power semiconductor device 15) of the conductive circuit pattern 10 is larger than the cross-sectional area of ​​the other end of the metal pin 37 proximal to the first main surface 10a (or power semiconductor device 15) of the conductive circuit pattern 10.

[0096] As in Fig. 14, in a power semiconductor device 1e and a method for manufacturing the same in a modification of the present embodiment, the cross section of the metal pin 31 along the longitudinal direction of the metal pin 31 has a serrated shape that narrows toward the first main surface 10a of the conductive circuit pattern 10. The cross section of the metal pin 34 along the longitudinal direction of the metal pin 34 has a serrated shape that narrows toward the first main surface 10a of the conductive circuit pattern 10. The cross section of the metal pin 37 along the longitudinal direction of the metal pin 37 has a serrated shape that narrows toward the first main surface 10a of the conductive circuit pattern 10.

[0097] The power semiconductor device 1d, 1e and the method of manufacturing the same in the present embodiment achieve the following effects in addition to the effects achieved by the power semiconductor device 1 and the method of manufacturing the same in the first embodiment.

[0098] In the power semiconductor device 1d, 1e and the method for manufacturing the same in the present embodiment, the first cross section of the first metal pin (metal pin 31) along the first longitudinal direction of the first metal pin and the cross section of the second metal pin (metal pin 34 or metal pin 37) along the second longitudinal direction of the second metal pin have a conical shape or a toothed shape that becomes narrower toward the first main surface 10a of the conductive circuit pattern 10.

[0099] With this configuration, the following applies: When the first metal pin (metal pin 31) is inserted into the first hole (hole 22), the first metal pin crushes voids that exist in the conductive bond precursor (conductive bond precursor 32p, 32q, see Fig. 5 to Fig. 7) arranged in the first hole. The first metal pin is bonded even more firmly to the conductive circuit pattern 10 and the sealing element 20. When the second metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), the second metal pin crushes voids formed in the conductive bond precursor (conductive bond precursor 35p, 35q or conductive bond precursor 38p, 38q, see Fig. 5 to Fig. 7) disposed in the second hole. The second metal pin is bonded even more tightly to the power semiconductor device 15 and the sealing element 20. The reliability of the power semiconductor device 1d, 1e can be improved.

[0100] When the first metal pin (metal pin 31) is inserted into the first hole (hole 22), the central axis in the first longitudinal direction of the first metal pin is aligned or flush with the central axis in the second longitudinal direction of the first hole through the side surface of the first metal pin, even if the central axis in the first longitudinal direction of the first metal pin is misaligned with the central axis in the second longitudinal direction of the first hole. The first conductive bonding element (conductive bonding element 32) is uniformly formed around the first metal pin. When the first metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), the central axis in the third longitudinal direction of the second metal pin is aligned or flush with the central axis in the fourth longitudinal direction of the second hole through the side surface of the second metal pin.is aligned with it, even if the central axis in the third longitudinal direction of the second metal pin is misaligned with the central axis in the fourth longitudinal direction of the second hole. The second conductive bonding member (conductive bonding member 35 or conductive bonding member 38) is uniformly formed around the second metal pin. With this configuration, even if a stress is applied to the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) due to a change in ambient temperature, the stress can be prevented from acting strongly locally on a part of the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36).The reliability of the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) can be improved, and the reliability of the power semiconductor device 1d, 1e can be improved. The productivity of the power semiconductor device 1d, 1e can be improved. Fourth embodiment

[0101] With reference to Fig. 15, a power semiconductor device 1f in a fourth embodiment will be described. The power semiconductor device 1f in the present embodiment has a configuration similar to that of the power semiconductor device 1 in the first embodiment, and a method for manufacturing the power semiconductor device 1f in the present embodiment includes steps similar to those in the method for manufacturing the power semiconductor device 1 in the first embodiment, and differs mainly in the following points.

[0102] In the power semiconductor device 1f and the method for manufacturing the same in the present embodiment, the diameter of the proximal end of the hole 22 with respect to the first main surface 10a of the conductive circuit pattern 10 is smaller than the diameter of the distal end of the hole 22 with respect to the first main surface 10a of the conductive circuit pattern 10. The hole 22 positions the metal pin 31 in the direction normal to the first main surface 10a of the conductive circuit pattern 10. More specifically, the hole 22 has a tapered shape that becomes narrower toward the first main surface 10a of the conductive circuit pattern 10. The proximal end of the metal pin 31 relative to the first main surface 10a of the conductive circuit pattern 10 abuts the side surface of the hole 22, and thereby the metal pin 31 is positioned in the direction normal to the first main surface 10a of the conductive circuit pattern 10.

[0103] The diameter of the proximal end of the hole 23 relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than the diameter of the distal end of the hole 23 relative to the first main surface 10a of the conductive circuit pattern 10. The hole 23 positions the metal pin 34 in the direction normal to the first main surface 10a of the conductive circuit pattern 10. More specifically, the hole 23 has a tapered or conical shape that becomes narrower toward the first main surface 10a of the conductive circuit pattern 10. The proximal end of the metal pin 34 relative to the first main surface 10a of the conductive circuit pattern 10 abuts the side surface of the hole 23, and thereby the metal pin 34 is positioned in the direction normal to the first main surface 10a of the conductive circuit pattern 10.

[0104] The diameter of the proximal end of the hole 24 relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than the diameter of the distal end of the hole 24 relative to the first main surface 10a of the conductive circuit pattern 10. The hole 24 positions the metal pin 37 in the direction normal to the first main surface 10a of the conductive circuit pattern 10. More specifically, the hole 24 has a tapered or conical shape that becomes narrower toward the first main surface 10a of the conductive circuit pattern 10. The proximal end of the metal pin 37 relative to the first main surface 10a of the conductive circuit pattern 10 abuts the side surface of the hole 24, and thereby the metal pin 37 is positioned in the direction normal to the first main surface 10a of the conductive circuit pattern 10.

[0105] As in Fig. 16, in a power semiconductor device 1g and a method for manufacturing the same in a modification of the present embodiment, the metal pin 31 includes a body 61 and a head 62 disposed at the distal end of the body 61 with respect to the first main surface 10a of the conductive circuit pattern 10. The diameter of the head 62 is larger than the diameter of the body 61. The hole 22 has a small-diameter portion 71 and a large-diameter portion 72 communicatively connected to the small-diameter portion 71. The large-diameter portion 72 has a larger diameter than the small-diameter portion 71 and is more distal from the first main surface 10a of the conductive circuit pattern 10 than the small-diameter portion 71.

[0106] The diameter of the body 61 of the metal pin 31 is smaller than the diameter of the small diameter portion 71 of the hole 22 and smaller than the diameter of the large diameter portion 72 of the hole 22. The diameter of the head 62 of the metal pin 31 is larger than the diameter of the small diameter portion 71 of the hole 22 and smaller than the diameter of the large diameter portion 72 of the hole 22. The small diameter portion 71 of the hole 22 receives the body 61 of the metal pin 31. The large diameter portion 72 of the hole 22 receives the head 62 of the metal pin 31. The head 62 of the metal pin 31 abuts against the bottom surface of the large diameter portion 72 of the hole 22, and thereby the metal pin 31 is positioned in the direction normal to the first main surface 10a of the conductive circuit pattern 10.

[0107] The metal pin 34 has a body 64 and a head 65 located at the distal end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10. The diameter of the head 65 is larger than the diameter of the body 64. The hole 23 has a small-diameter portion 74 and a large-diameter portion 75 communicating with the small-diameter portion 74. The large-diameter portion 75 has a larger diameter than the small-diameter portion 74 and is further distal from the first main surface 10a of the conductive circuit pattern 10 than the small-diameter portion 74.

[0108] The diameter of the body 64 of the metal pin 34 is smaller than the diameter of the small diameter portion 74 of the hole 23 and smaller than the diameter of the large diameter portion 75 of the hole 23. The diameter of the head 65 of the metal pin 34 is larger than the diameter of the small diameter portion 74 of the hole 23 and smaller than the diameter of the large diameter portion 75 of the hole 23. The small diameter portion 74 of the hole 23 receives the body 64 of the metal pin 34. The large diameter portion 75 of the hole 23 receives the head 65 of the metal pin 34. The head 65 of the metal pin 34 abuts against the bottom surface of the large diameter portion 75 of the hole 23, and thereby the metal pin 34 is positioned in the direction normal to the first main surface 10a of the conductive circuit pattern 10.

[0109] The metal pin 37 has a body 67 and a head 68 located at the distal end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10. The diameter of the head 68 is larger than the diameter of the body 67. The hole 24 has a small-diameter portion 77 and a large-diameter portion 78 communicating with the small-diameter portion 77. The large-diameter portion 78 has a larger diameter than the small-diameter portion 77 and is further distal from the first main surface 10a of the conductive circuit pattern 10 than the small-diameter portion 77.

[0110] The diameter of the body 67 of the metal pin 37 is smaller than the diameter of the small diameter portion 77 of the hole 24 and smaller than the diameter of the large diameter portion 78 of the hole 24. The diameter of the head 68 of the metal pin 37 is larger than the diameter of the small diameter portion 77 of the hole 24 and smaller than the diameter of the large diameter portion 78 of the hole 24. The small diameter portion 77 of the hole 24 receives the body 67 of the metal pin 37. The large diameter portion 78 of the hole 24 receives the head 68 of the metal pin 37. The head 68 of the metal pin 37 abuts against the bottom surface of the large diameter portion 78 of the hole 24, and thereby the metal pin 37 is positioned in the direction normal to the first main surface 10a of the conductive circuit pattern 10.

[0111] The power semiconductor device 1f, 1g and the method of manufacturing the same in the present embodiment achieve the following effects in addition to the effects achieved by the power semiconductor device 1 and the method of manufacturing the same in the first embodiment.

[0112] In the power semiconductor device 1f, 1g and the method for manufacturing the same in the present embodiment, the diameter of the first proximal end of the first hole (hole 22) relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than the second diameter of the first distal end of the first hole relative to the first main surface 10a of the conductive circuit pattern 10. The first hole positions the first metal pin (metal pin 31) in the direction normal to the first main surface 10a of the conductive circuit pattern 10. A third diameter of a second proximal end of the second hole (hole 23 or hole 24) relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than the fourth diameter of a second distal end of the second hole relative to the first main surface 10a of the conductive circuit pattern 10.The second hole positions the second metal pin (metal pin 34 or metal pin 37) in the direction normal to the first main surface 10a of the conductive circuit pattern 10.

[0113] With this contact, a first distance (distance G1 between the conductive circuit pattern 10 and the first metal pin (metal pin 31) and a second distance (distance G2 or distance G3 between the power semiconductor device 15 and the second metal pin (metal pin 34 or metal pin 37)) can be suitably specified.

[0114] The reliability of the electrical connection between the conductive circuit pattern 10 and the first metal pin and the reliability of the electrical connection between the power semiconductor device 15 and the second metal pin can be improved. The reliability of the power semiconductor device 1f, 1g can be improved.

[0115] In the power semiconductor device 1f, 1g and the method for manufacturing the same in the present embodiment, the first hole (hole 22) and the second hole (hole 23 or hole 24) have a conical shape that becomes narrower toward the first main surface 10a of the conductive circuit pattern 10.

[0116] With this configuration, the first distance between the conductive circuit pattern 10 and the first metal pin (metal pin 31) and the second distance between the power semiconductor device 15 and the second metal pin (metal pin 34 or metal pin 37) can be appropriately specified. The reliability of the electrical connection between the conductive circuit pattern 10 and the first metal pin and the reliability of the electrical connection between the power semiconductor device 15 and the second metal pin can be improved. The reliability of the power semiconductor device 1f, 1g can be improved.

[0117] When the first metal pin (metal pin 31) is inserted into the first hole (hole 22), the central axis in the first longitudinal direction of the first metal pin is aligned or flush with the central axis in the second longitudinal direction of the first hole through the side surface of the first hole, even if the central axis in the first longitudinal direction of the first metal pin is misaligned with the central axis in the second longitudinal direction of the first hole. The first conductive bonding element (conductive bonding element 32) is evenly formed around the first metal pin. When the first metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), the central axis in the third longitudinal direction of the second metal pin is aligned or flush with the central axis in the fourth longitudinal direction of the second hole through the side surface of the second hole.is aligned with it, even if the central axis in the third longitudinal direction of the second metal pin is misaligned with the central axis in the fourth longitudinal direction of the second hole. The second conductive bonding member (conductive bonding member 35 or conductive bonding member 38) is uniformly formed around the second metal pin. With this configuration, even if a stress is applied to the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) due to a change in ambient temperature, the stress can be prevented from acting strongly locally on a part of the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36).The reliability of the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) can be improved, and the reliability of the power semiconductor device 1f, 1g can be improved. The productivity of the power semiconductor device 1f, 1g can be improved.

[0118] In the power semiconductor device 1f, 1g and the method for manufacturing the same in the present embodiment, the first metal pin (metal pin 31) includes the first body (body 61) and the first head (head 62) located at a third distal end of the first body with respect to the first main surface 10a of the conductive circuit pattern 10. The second metal pin (metal pin 34 or metal pin 37) includes the second body (body 64 or body 67) and the second head (head 65 or head 68) located at a fourth distal end of the second body with respect to the first main surface 10a of the conductive circuit pattern 10. The first hole has the first small-diameter portion (small-diameter portion 71) that receives the first body. The first hole has the first large-diameter portion (large-diameter portion 72) that receives the first head.The second hole has a second small-diameter portion (small-diameter portion 74 or small-diameter portion 77) that receives the second body. The second hole has the second large-diameter portion (large-diameter portion 75 or large-diameter portion 78) that receives the second head.

[0119] With this configuration, the first distance between the conductive circuit pattern 10 and the first metal pin (metal pin 31) and the second distance between the power semiconductor device 15 and the second metal pin (metal pin 34 or metal pin 37) can be appropriately specified. The reliability of the electrical connection between the conductive circuit pattern 10 and the first metal pin and the reliability of the electrical connection between the power semiconductor device 15 and the second metal pin can be improved. The reliability of the power semiconductor device 1f, 1g can be improved. Fifth embodiment

[0120] In the present embodiment, any one of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g in the above first to fourth embodiments is applied to a power converter device. Although the present invention is not limited to any particular power converter device, the application of any one of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g to a three-phase inverter will be described below as a fifth embodiment.

[0121] The power converter system used in Fig. 17 is configured with a power source 100, a power converter device 200, and a load 300. The power source 100 is a DC power source and supplies DC power to the power converter device 200. The power source 100 may be formed, for example and without limitation, from a DC system, a solar battery, or a storage battery, or it may be formed from a rectifier circuit or an AC / DC converter connected to an AC system. The power source 100 may be formed from a DC / DC converter that converts DC power output from a DC system into other types of DC power.

[0122] The power converter device 200 is a three-phase inverter connected between the power source 100 and the load 300, and converts DC power supplied from the power source 100 into AC power and supplies the AC power to the load 300. As shown in Fig.17, the power converter device 200 includes: a main conversion circuit 201 for converting DC power into AC power and outputting AC power, and a control circuit 203 for outputting a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

[0123] The load 300 is a three-phase motor driven by the AC power supplied by the power converter device 200. The load 300 is not limited to specific applications and is a motor installed in a variety of electrical instruments and used, for example, as a motor for hybrid vehicles, electric vehicles, rail vehicles, elevators, or air conditioning systems.

[0124] The details of the power converter device 200 are described below. The main conversion circuit 201 includes switching elements (not shown) and freewheeling diodes (not shown). The switching elements switch a voltage supplied from the power source 100, whereby the main conversion circuit 201 converts the DC power supplied from the power source 100 into AC power and supplies AC power to the load 300. There are a variety of circuit configurations of the main conversion circuit 201. The main conversion circuit 201 according to the present embodiment may be a two-level, three-phase full-bridge circuit and include six switching elements and six freewheeling diodes connected in antiparallel to the respective switching elements.At least one of the switching elements and the freewheeling diodes of the main conversion circuit 201 is a switching element or a freewheeling diode of a power semiconductor device 202 corresponding to one of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g in the above first to fourth embodiments. Six switching elements are connected in series in groups of two, thus forming upper and lower arms, and the upper and lower arms form each phase (U-phase, V-phase, W-phase) of a full-bridge circuit. The respective output terminals of the upper and lower arms, i.e., three output terminals of the main conversion circuit 201, are connected to the load 300.

[0125] The main conversion circuit 201 also includes a drive circuit (not shown) for driving each switching element. The drive circuit may be included in the power semiconductor device 202 or may be arranged outside the power semiconductor device 202. The drive circuit generates a drive signal for driving a switching element in the main conversion circuit 201 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 201. More specifically, a drive signal for turning on a switching element and a drive signal for turning off a switching element are output to the control electrode of each switching element according to a control signal from the control circuit 203. When the switching element is left in the on state, the drive signal is a voltage signal (turn-on signal) equal to or higher than a threshold voltage of the switching element.When the switching element is left in the off state, the drive signal is a voltage signal (off signal) equal to or lower than a threshold voltage of the switching element.

[0126] The control circuit 203 controls the switching element of the main conversion circuit 201 to supply power to the load 300. Specifically, the time (on time) for which each switching element of the main conversion circuit 201 is to be turned on is calculated based on the power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control, which modulates the on time of the switching elements according to the voltage to be output to the load 300. A control command (control signal) is output to a driver circuit of the main conversion circuit 201 so that an on signal is output to a switching element to be turned on and an off signal is output to a switching element to be turned off at each time point.The drive circuit outputs an on-signal or an off-signal as a drive signal to the control electrode of each switching element according to the control signal.

[0127] In the power conversion device in the present embodiment, any one of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g in the first to fourth embodiments is applied as the power semiconductor device 202 constituting the main conversion circuit 201. In the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g in the first to fourth embodiments, since the first conductive post (conductive post 30) and the second conductive post (conductive post 33 or conductive post 36) can be formed with a larger height, the distance between the power semiconductor device 15 included in the power semiconductor device 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g and the control circuit 203 can be increased. The reliability of the power converter device can be improved.

[0128] In the present embodiment, the present invention is applied to a two-level, three-phase inverter. However, the present invention is not limited thereto and can be applied to a variety of power conversion devices. In the present embodiment, the present invention is applied to a two-level power conversion device, but it can also be applied to a three-level or more power conversion device. When the power conversion device supplies power to a single-phase load, the present invention can also be applied to a single-phase inverter. When the power conversion device supplies power to a DC load or the like, the present invention can also be applied to a DC / DC / DC converter or an AC / DC converter.

[0129] The power converter device to which the present invention is applied is not limited to the case where the load is a motor as described above, and it can be used as a power supply device for an electric discharge machine or laser machine or an induction cooker or a wireless charging system, or it can be used as a power conditioner for a solar power system or an energy storage system. List of reference symbols 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g power semiconductor device, 2, 2a power semiconductor module, 10 conductive circuit pattern, 10a first main area, 10b main area, 15 power semiconductor device, 16 return electrode, 17 first front electrode, 18 second front electrode, 20 sealing element, 20a second main surface, 22, 23, 24 holes, 30, 33, 36 conductive support, 31, 34, 37 metal pin, 32, 35, 38 conductive bonding element, 32p, 32q, 32r, 35p, 35q, 35r, 38p, 38q, 38r conductive bond precursor, 40 shape, 41 fixed part, 42 moving part, 43, 44, 45 Form-Pin, 50, 50a circuit board, 51 Insulating substrate, 51a third main area, 51b fourth main surface, 52 wiring, 53 first wiring area, 54 second wiring area, 55 third wiring area, 61, 64, 67 body, 62, 65, 68 head, 63, 66, 69 leg, 71, 74, 77 small diameter area, 72, 75, 78 large diameter area, 100 energy source, 200 power converter device, 201 Main conversion circuit, 202 power semiconductor device, 203 control circuit, 300 load.

Claims

[1] Power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) comprising: a conductive circuit pattern (10) having a first main surface (10a); a power semiconductor device (15) bonded to the first main surface (10a); a sealing element (20) sealing the first main surface (10a) and the power semiconductor device (15); a first conductive support (30) filling the first hole (22) formed in the sealing member (20) and connected to the first main surface (10a) of the conductive circuit pattern (10); and a second conductive support (33, 36) filling a second hole (23, 24) formed in the sealing element (20) and connected to the power semiconductor device (15), wherein the first conductive support (30) has a first metal pin (31) and a first conductive bonding element (32), the second conductive support (33, 36) has a second metal pin (34, 37) and a second conductive bonding element (35, 38), the first conductive bonding element (32) fills between a first pin side surface of the first metal pin (31) and a first side surface of the first hole (22) and bonds the first metal pin (31) to the conductive circuit pattern (10), and the second conductive bonding element (35, 38) fills between a second pin side surface of the second metal pin (34, 37) and a second side surface of the second hole (23, 24) and bonds the second metal pin (34, 37) to the power semiconductor device (15). [2] The power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) according to claim 1, wherein the first metal pin (31) and the second metal pin (34, 37) are formed of copper, aluminum, gold, or silver. [3] The power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) according to claim 1 or 2, wherein the first conductive bonding element (32) and the second conductive bonding element (35, 38) are formed of solder or a sintered metal fine particle body. [4] The power semiconductor device (1b, 1c, 1g) according to any one of claims 1 to 3, wherein a first cross section of the first metal pin (31) along a first longitudinal direction of the first metal pin (31) and a second cross section of the second metal pin (34, 37) along a second longitudinal direction of the second metal pin (34, 37) have a T-shape or an I-shape. [5] The power semiconductor device (1d, 1e) according to any one of claims 1 to 3, wherein a first cross section of the first metal pin (31) along a first longitudinal direction of the first metal pin (31) and a second cross section of the second metal pin (34, 37) along a second longitudinal direction of the second metal pin (34, 37) have a conical shape that becomes narrower toward the first main surface (10a) or a toothed shape that becomes narrower toward the first main surface (10a). [6] The power semiconductor device (1f, 1g) according to any one of claims 1 to 5, wherein a first diameter of a first proximal end of the first hole (22) relative to the first main surface (10a) is smaller than a second diameter of a first distal end of the first hole (22) relative to the first main surface (10a), and the first hole (22) positions the first metal pin (31) in a direction normal to the first main surface (10a), and a third diameter of a second proximal end of the second hole (23, 24) relative to the first main surface (10a) is smaller than a fourth diameter of a second distal end of the second hole (23, 24) relative to the first main surface (10a), and the second hole (23, 24) positions the second metal pin (34, 37) in a direction normal to the first main surface (10a). [7] The power semiconductor device (1f) according to claim 6, wherein the first hole (22) and the second hole (23, 24) have a conical shape that becomes narrower toward the first main surface (10a). [8] Power semiconductor device (1g) according to claim 6, wherein the first metal pin (31) has a first body (61) and a first head (62) arranged at a third distal end of the first body (61) relative to the first main surface (10a), the second metal pin (34, 37) has a second body (64, 67) and a second head (65, 68) arranged at a fourth distal end of the second body (64, 67) relative to the first main surface (10a), the first hole (22) has a first small diameter portion which receives the first body (61), the first hole (22) has a first large diameter portion which receives the first head (62), the second hole (23, 24) has a second small diameter portion which receives the second body (64, 67), and the second hole (23, 24) has a second large diameter portion which receives the second head (65, 68). [9] Power semiconductor device (1, 1b, 1c, 1d, 1e) according to one of claims 1 to 5, wherein the sealing element (20) has a second main surface (20a) away from the first main surface (10a) in a direction normal to the first main surface (10a), and a first end portion of the first conductive support (30) and a second end portion of the second conductive support (33, 36) protrude distally from the first main surface (10a) from the second main surface (20a). [10] Power semiconductor device (1a, 1f, 1g) according to one of claims 1 to 5, wherein the sealing element (20) has a second main surface (20a) away from the first main surface (10a) in a direction normal to the first main surface (10a), and a first end region of the first conductive support (30) and a second end region of the second conductive support (33, 36) distal from the first main surface (10a) are flush with the second main surface (20a). [11] A method for manufacturing a power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g), the method comprising: Bonding the power semiconductor device (15) to the first main surface (10a) of a conductive circuit pattern (10); Arranging a sealing element (20) which seals the first main surface (10a) and the power semiconductor device (15) and has a first hole (22) and a second hole (23, 24); forming a first conductive support (30) in the first hole (22); and Forming a second conductive support (33, 36) in the second hole (23, 24), wherein arranging the sealing element (20) comprises placing the conductive circuit pattern (10) to which the power semiconductor device (15) is bonded into a cavity of a mold (40) having a first mold pin (43) and a second mold pin (44, 45), injecting a sealing resin material into the cavity of the mold, and curing the sealing resin material to obtain the sealing element (20), wherein the first mold pin (43) is arranged corresponding to the first hole (22), wherein the second mold pin (44, 45) is arranged corresponding to the second hole (23, 24), wherein the first conductive support (30) fills the first hole (22) and is connected to the first main surface (10a) of the conductive circuit pattern (10), the second conductive support (33, 36) fills the second hole (23, 24) and is connected to the power semiconductor device (15), the first conductive support (30) has a first metal pin (31) and a first conductive bonding element (32), the second conductive support (33, 36) has a second metal pin (34, 37) and a second conductive bonding element (35, 38), the first conductive bonding element (32) fills between a first pin side surface of the first metal pin (31) and a first side surface of the first hole (22) and bonds the first metal pin (31) to the conductive circuit pattern (10), and the second conductive bonding element (35, 38) fills between a second pin side surface of the second metal pin (34, 37) and a second side surface of the second hole (23, 24) and bonds the second metal pin (34, 37) to the power semiconductor device (15). [12] A method for manufacturing a power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) according to claim 11, wherein forming the first conductive support (30) in the first hole (22) comprises disposing a first conductive bond precursor (32p) in paste or powder form in the first hole (22), bringing the first metal pin (31) into contact with the first conductive bond precursor (32p) to dispose the first conductive bond precursor (32p) between the first metal pin (31) and the conductive circuit pattern (10) and between the first pin side surface of the first metal pin (31) and the first side surface of the first hole (22), and heating and cooling the first conductive bond precursor (32p) to convert the first conductive bond precursor (32p) into the first conductive bond element (32), and forming the second conductive support (33, 36) in the second hole (23, 24), arranging a second conductive bond precursor (35p, 38p) in paste or powder form in the second hole (23, 24), bringing the second metal pin (34, 37) into contact with the second conductive bond precursor (35p, 38p) to arrange the second conductive bond precursor (35p, 38p) between the second metal pin (34, 37) and the power semiconductor device (15) and between the second pin side surface of the second metal pin (34, 37) and the second side surface of the second hole (23, 24), and heating and cooling the second conductive bond precursor (35p, 38p) to convert the second conductive bond precursor (35p, 38p) into the second conductive bonding element (35, 38). [13] A method for manufacturing a power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) according to claim 11, wherein forming the first conductive support (30) in the first hole (22) comprises disposing a first conductive bonding precursor (32q) in the first hole (22), heating the first conductive bonding precursor (32q) so that the first conductive bonding precursor (32q) melts, immersing the first metal pin (31) in the molten first conductive bonding precursor (32q) to dispose the molten first conductive bonding precursor (32q) between the first metal pin (31) and the conductive circuit pattern (10) and between the first pin side surface of the first metal pin (31) and the first side surface of the first hole (22) and cooling the first conductive bond precursor (32q) to convert the first conductive bond precursor (32q) into the first conductive bond element (32), and forming the second conductive support (33,36) in the second hole (23, 24), arranging a second conductive bond precursor (35q, 38q) in the second hole (23, 24), heating the second conductive bond precursor (35q, 38q) so that the second conductive bond precursor (35q, 38q) melts, immersing the second metal pin (34, 37) in the molten second conductive bond precursor (35q, 38q) to arrange the molten second conductive bond precursor (35q, 38q) between the second metal pin (34, 37) and the power semiconductor device (15) and between the second pin side surface of the second metal pin (34, 37) and the second side surface of the second hole (23, 24), and cooling the second conductive bond precursor (35q, 38q) for converting the second conductive bond precursor (35q, 38q) into the second conductive bond element (35, 38)., [14] A method for manufacturing a power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) according to claim 11, wherein forming the first conductive support (30) in the first hole (22) comprises applying a first conductive bond precursor (32r) to the first metal pin (31), inserting the first metal pin (31), to which the first conductive bond precursor (32r) is applied, into the first hole (22) such that the first conductive bond precursor (32r) is arranged between the first metal pin (31) and the conductive circuit pattern (10) and between the first pin side surface of the first metal pin (31) and the first side surface of the first hole (22), and heating and cooling the first conductive bond precursor (32r) to convert the first conductive bond precursor (32r) into the first conductive bonding element (32), and forming the second conductive support (33, 36) in the second hole (23, 24), applying a second conductive bond precursor (35r, 38r) to the second metal pin (34, 37), inserting the second metal pin (34, 37), to which the second conductive bond precursor (35r, 38r) is applied, into the second hole (23, 24) so ​​that the second conductive bond precursor (35r, 38r) is arranged between the second metal pin (34, 37) and the power semiconductor device (15) and between the second pin side surface of the second metal pin (34, 37) and the second side surface of the second hole (23, 24), and heating and cooling the second conductive bond precursor (35r, 38r) to convert the second conductive bond precursor (35r, 38r) into the second conductive bond element (35, 38). [15] A method for manufacturing a power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) according to claim 12 or 14, wherein the first conductive bond precursor (32p, 32r) is heated using heat generated in the first metal pin (31), and the second conductive bond precursor (35p, 35r, 38p, 38r) is heated using heat generated in the second metal pin (34, 37). [16] A method for manufacturing a power semiconductor device (1b, 1c, 1g) according to any one of claims 11 to 15, wherein a first cross section of the first metal pin (31) along a first longitudinal direction of the first metal pin (31) and a second cross section of the second metal pin (34, 37) along a second longitudinal direction of the second metal pin (34, 37) have a T-shape or an I-shape. [17] A method for manufacturing a power semiconductor device (1d, 1e) according to any one of claims 11 to 15, wherein a first cross section of the first metal pin (31) along a first longitudinal direction of the first metal pin (31) and a second cross section of the second metal pin (34, 37) along a second longitudinal direction of the second metal pin (34, 37) have a conical shape that becomes narrower toward the first main surface (10a) or have a toothed shape that becomes narrower toward the first main surface (10a). [18] A method for manufacturing a power semiconductor device (1f, 1g) according to any one of claims 11 to 16, wherein a first diameter of a first end of the first hole (22) proximal to the first main surface (10a) is smaller than a second diameter of a second end of the first hole (22) distal from the first main surface (10a) and the first hole (22) positions the first metal pin (31) in a direction normal to the first main surface (10a), and a third diameter of a third end of the second hole (23, 24) proximal to the first main surface (10a) is smaller than a fourth diameter of a fourth end of the second hole (23, 24) distal from the first main surface (10a), and the second hole (23, 24) positions the second metal pin (34, 37) in a direction normal to the first main surface (10a). [19] Power converter device (200) comprising: a main conversion circuit (201) comprising the power semiconductor device (1, 1a, 1b, 1c, 1d, 1e, 1f, 1g) according to any one of claims 1 to 10, wherein the main conversion circuit (201) converts input energy and outputs the converted energy; and a control circuit (203) for outputting a control signal for controlling the main conversion circuit (201) to the main conversion circuit (201).

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