Power converter module

Abstract

Power converter module (10) comprising: an active metal solder substrate (48) comprising an aluminum nitride base layer (50), a first conductive layer (52) on a first surface of the aluminum nitride base layer (50), and a second conductive layer (58) on a second surface of the aluminum nitride base layer (50) opposite the first surface; a power converter circuit assembly (18) on the active metal solder substrate (48) and a plurality of silicon carbide switching components coupled to one another via the first conductive layer (52); one or more wire connections (54) such that a gate control path has a maximum length of approximately 20 mm, wherein the power converter circuit assembly (18) is configured to provide an output voltage greater than 650 V, an output power greater than 900 W, and operation at a switching frequency greater than 40 kHz;and a housing (12) that encloses the active metal solder substrate (48), wherein the surface area of ​​a base of the housing (12) is less than or equal to approximately 20.46 cm2.;

Description

FIELD OF DISCLOSUREThe present disclosure relates to power converter modules.BACKGROUNDPower converter modules (which, as referred to herein, may also include power converters) are stand-alone devices that may perform a variety of functions within a power converter system. For example, the power converter modules may include boost converters (boost converters), buck converters (buck converters), half bridge converters, and full bridge converters. Conventional power converter modules generally include power converter circuitry that uses silicon (Si) switching components. While effective in numerous applications, the use of the power converter circuitry with silicon (Si) circuit components generally limits the switching frequency at which the power converter circuitry can operate. The lower the switching frequency of the components in the power converter circuitry, the larger the filter components, such as inductors and capacitors, that are used in a power converter system must be. Accordingly, filter components used together with the power converter circuitry using silicon (Si) switching components must be relatively large, thereby increasing the cost of the power converter system. Further, switching components of silicon (Si) at high switching frequency are often accompanied by relatively low efficiency and low energy density.SUMMARY OF THE INVENTIONThe present disclosure relates to a power converter module having the features of claim 1, a power converter module having the features of claim 12, a power converter module having the features of claim 24, a power converter module having the features of claim 27, a power converter module having the features of claim 29, a power converter module having the features of claim 36, a power converter module having the features of claim 43, a power converter module having the features of claim 49, a power converter module having the features of claim 63, a power converter module having the features of claim 71, a power converter module having the features of claim 79, a power converter module having the features of claim 87, a power converter module having the features of claim 94 and a power converter module having the features of claim 104.In an embodiment, the first conductive layer is directly on the first surface of the aluminum nitride base layer and the second conductive layer is directly on the second surface of the aluminum nitride base layer.In an embodiment, the first conductive layer is etched to form a desired connection pattern between the silicon carbide switching components. The silicon carbide switching components may be coupled to the first conductive layer via one or more wire bonds such that the power circuit path has a maximum length of about 50 mm and the gate control path has a maximum length of about 20 mm. By minimizing the power circuit path length and a gate control path length, the leakage inductance in the power converter module is reduced.In one embodiment, the power converter circuitry is a boost converter (boost converter) configured to receive a direct current (DC) input voltage and provide a boosted DC output voltage. The power converter circuit arrangement may include a silicon carbide metal oxide semiconductor field effect transistor (MOSFET) connected in series with a silicon carbide Schottky diode. Further, the power converter circuitry may be configured to provide an output voltage of greater than 650 V, an output power of greater than 900 W, and operate at a switching frequency of greater than 40 kHz. The switching losses of the power converter circuitry may be between 5 mJ / A and 100 mJ / A. The insulating base layer may have a minimum thermal conductivity of 30 W / m-K to provide a low thermal resistance between the power converter circuitry and the second conductive layer.In an embodiment, the power converter circuitry is a buck converter (buck converter), an albridge converter, a full-bridge converter, a single-phase converter, a three-phase converter, and multi-stage topologies such as the neutral point clamped (NPC) and the transistor-type neutral point clamped (TNPC).Those skilled in the art will recognize the scope of the present disclosure and additionally realize aspects thereof after having read the following detailed description of the preferred embodiments in conjunction with the accompanying drawing figures.BRIEF DESCRIPTION OF THE DRAWINGSThe accompanying drawing figures, which are incorporated in and constitute a part of this specification, illustrate several aspects of the disclosure and, together with the description, serve to explain the principles of the disclosure. In the drawings, there are shown: FIG. 1 is an isometric view of a power converter module in accordance with an embodiment of the present disclosure; FIG. 2 is a side view of a power converter module in accordance with an embodiment of the present disclosure; FIG. 3 is a schematic illustration of power converter circuitry in a power converter module in accordance with an embodiment of the present disclosure; FIG. 4 is a schematic illustration of a boost converter including power converter circuitry shown in accordance with an embodiment of the present disclosure; FIG. 5 is a schematic illustration of a boost converter with power converter circuitry in accordance with an additional embodiment of the present disclosure; FIG. 6 is a schematic view of a boost converter including power converter circuitry in accordance with an additional embodiment of the present disclosure; FIG. 7 is a top view of the power converter circuitry, in accordance with an embodiment of the present disclosure; and FIG. 8 is a cross-sectional view of a substrate and the power converter circuitry shown in FIG. 3, in accordance with an embodiment of the present disclosure.DETAILED DESCRIPTIONThe embodiments listed hereinafter provide the necessary information to enable those skilled in the art to practice the embodiments and illustrate the preferred methodology for practicing the embodiments. Upon a study of the following description, with reference to the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will realize applications of these concepts that are not particularly referred to herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the appended claims.Although the terms first, second, etc. may be used herein to describe various elements, it should be understood that these elements are not limited by these terms. These terms are used only to distinguish one element from another. For example, a first element could be referred to as a second element, and similarly, a second element could be referred to as a first element, without departing from the scope of the present disclosure. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.It should be noted that when an element such as a layer, region or substrate is referred to as being "on" or extending "on" another element, it may be directly on or extending directly on the other element, or intervening elements may also be present. In contrast, if an element is referred to as being "directly on" or extending "directly on" another element, then there are no intervening elements present. Likewise, it should be understood that when an element, such as a layer, region, or substrate, is referred to as being "over" or extending "over" another element, it may be directly over the other element or directly over this other element, or intervening elements may also be present. In contrast, if an element is referred to as being "directly over" another element or extending "directly over" another element, then there are no intervening elements present. It should also be noted that when an element is referred to as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element or intervening elements may be present. In contrast, if an element is referred to as being "directly connected" or "directly coupled" to another element, then there are no intervening elements present.Relative terms, such as "below" or "above" or "upper" or "lower" or "horizontal" or "vertical", may be used herein to describe a relationship of one element, layer or region to another element, layer or region as depicted in the figures. It should be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the figuresThe terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It is further understood that the terms "comprises," "comprising," "includes," and / or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure pertains. It is further understood that terms used herein are to be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the art, and are not to be interpreted in an idealized or overly formal sense unless expressly so defined herein.In view of the above embodiments, there is a need for a power converter circuit arrangement with improved performance. In particular, there is a need for a power converter circuit arrangement that is capable of operating efficiently at high switching frequencies and at high power densities.FIGS. 1 and 2 show an isometric view and a side view, respectively, of a power converter module 10 in accordance with an embodiment of the present disclosure. The power converter module 10 includes a housing 12, a number of input / output (I / O) pins 14, and a number of mounting holes 16. the housing 12 may be formed of a plastic material and may have dimensions of about 31 mm x 66 mm x 16 mm such that the power converter module 10 is compatible with existing power converter systems that accommodate power converter modules of that size. It should be appreciated that the principles of the present disclosure may be applied to housings of any type of material and size. The I / O pins 14 are coupled to various points in the power converter circuitry (not shown) contained within the housing 12, as discussed in more detail below.FIG. 3 is a schematic diagram illustrating details of power converter circuitry 18 within housing 12 of power converter module 10 in accordance with an embodiment of the present disclosure. The power converter circuitry 18 is divided into two parts (referred to herein as "channels") and includes a first metal oxide semiconductor field effect transistor (MOSFET) 20 connected in series with a first diode 22 and a second MOSFET 24 connected in series with a second diode 26. In particular, the first MOSFET 20 includes a gate contact (G), a source contact (S), and a drain contact (D). The gate contact of the first MOSFET 20 is coupled to a first of the I / O pins 14A. The source contact (S) of the first MOSFET 20 is coupled to second, third and fourth of the I / O pins 14B, 14C and 14D. A cathode of the first diode 22 is coupled to fifth and sixth ones of the I / O pins 14B, 14C, and 14D. The drain contact (D) of the first MOSFET 20 is coupled to ninth and tenth ones of the I / O pins 14G and 14H and to the anode of the first diode 22.Similarly, the second MOSFET 24 includes a gate contact (G), a source contact (S), and a drain contact (D). The drain contact (D) of the second MOSFET 24 is coupled to eleventh and twelfth ones of the I / O pins 14I and 14J and to the anode of the second diode 26. The cathode of the second diode 26 is coupled to thirteenth and fourteenth ones of the I / O pins 14K and 14L. The source contact (S) of the second MOSFET 24 is coupled to fifteenth, sixteenth and sixteenth of the I / O pins 14M, 14N, 140. The gate contact (G) of the second MOSFET 24 is coupled to an eighteenth of the I / O pins 14P. A temperature sensing resistor R_TM is coupled between nineteenth and twentieth ones of the I / O pins 14Q and 14R.The first MOSFET 20 and the first diode 22 (i.e., a first channel) together with one or more external components form a first boost converter circuit arrangement, while the second MOSFET 24 and the second diode 26 (i.e., a second channel) together with one or more external components form a second boost converter circuit arrangement. Because the separate boost converter circuitry operates in the same manner, the operating principles thereof will now be discussed as they relate to the first boost converter circuitry. In operation, a direct current (DC) voltage is applied across the source contact (S) and the drain contact (D) of the first MOSFET 20. In some embodiments, the DC voltage provided to the drain contact (D) of the first MOSFET 20 may be provided via a boost inductor (not shown). Further, a switching control signal is provided at the gate contact (G) of the first MOSFET 20, generally by gate driver circuitry (not shown). The resulting voltage across the cathode of the first diode 22 and the source contact (S) of the first MOSFET 20 is a converted-up DC output voltage. Accordingly, the first boost converter circuitry and the second boost converter circuitry may be used to appropriately scale high-power DC voltages, which may be particularly useful in applications such as solar power systems.In particular, the first MOSFET 20 and the second MOSFET 24 each include a gate feedback terminal (I / O pin 14B and I / O pin 14O, respectively) coupled to the source contact (S) thereof. In particular, these gate feedback terminals are respectively arranged as close as possible to the first MOSFET 20 and the second MOSFET 24, so that parasitic inductance between the gate feedback terminal and the source contact (S) is minimized. Generally, this increases the achievable turn-on and turn-off speeds of the first MOSFET 20 and the second MOSFET 24, thereby improving the performance of the power converter circuitry 18 by reducing switching losses.Each of the first MOSFET 20, the first diode 22, the second MOSFET 24, and the second diode 26 are silicon carbide devices, which may be referred to as switching devices. As discussed herein, switching devices are devices capable of selectively supplying power to a load. In one embodiment, the first diode 22 and the second diode 26 are Schottky diodes. As a result, the performance of the power conversion module 10 can be substantially improved. In particular, because silicon carbide devices are majority carrier devices, they do not have the disadvantages of reductions in switching speed due to recombination of minority carriers that generate deactivation (tail current) currents or reverse recovery current (reverse recovery current). In one embodiment, reverse recovery currents in conventional silicon PIN diodes are on the order of about 7000 nC, while recovery currents in power converter circuitry 18 are less than about 120 NC (a reduction by a factor of 16). As a result, silicon carbide devices may be operated at much higher speeds than conventional silicon devices, which provides several advantages to the performance of the power converter module 10 discussed below. The first boost converter circuit and the second boost converter circuit may be referred to as "channels.". Each of these channels may provide an output voltage between 650 V and 1200 V, an output current of 10 A to 50 A (e.g., 10 A, 20 A, 30 A, 40 A, and 50 A), and an output power between 900 W and 30 kW. Further, each of these channels may provide an efficiency between about 96% and 99.5%, and switching losses of less than or equal to about 300 W when operating at switching speeds greater than 40 kHz.In addition to the operational performance advantages provided by the use of silicon carbide devices in the power converter module 10, the use of silicon carbide devices also provides cost savings. In particular, the size of filter components, such as inductors and capacitors, used in a power conversion system incorporating the power conversion module 10 is inversely proportional to the switching frequency of the power conversion module. Further, the size of the filter components is proportional to the cost thereof. Accordingly, by using silicon carbide switching components that can be operated at high frequencies, such as those above 40 kHz, the size of filter components in a power system can be drastically reduced, thereby saving costs.While the power converter circuitry 18 shown in FIG. 3 is shown as a dual-channel boost converter, the present disclosure is not so limited. The principles of the present disclosure may be applied to a power converter circuit arrangement 18 having a buck converter (buck converter), a half bridge converter, a full bridge converter, a single phase converter, a three phase converter, or the like.FIG. 4 shows boost converter circuitry 28 including a first channel of power converter circuitry 18. Boost converter circuitry 28 includes first MOSFET 20 and first diode 20, a boost inductor 30, an output capacitor 32, and a voltage source 34. boost inductor 30 is coupled between a positive output of voltage source 34 and the drain contact (D) of first MOSFET 20. The first diode 22 is coupled between the drain contact (D) of the first MOSFET 20 and a first load output 36 of the boost converter circuitry 28. A second load output 38 is coupled to the source contact (S) of the first MOSFET 20. The output capacitor 32 is coupled between the first load output 36 and the second load output 38.In operation, a positive voltage is provided from the voltage source 34 to the boost inductor 30, where energy may be stored as a magnetic field. A switching control signal is supplied to the gate contact (G) of the first MOSFET 20 to repeatedly switch the first MOSFET 20 between an off state and an on state. In the off state of the first MOSFET 20, a positive potential across the first diode 22 as a result of charge on the boost inductor 30 allows current to flow from the boost inductor (I_BOOST) to the first load output 36 and let the output capacitor 32 pass. While not shown, a load will be coupled between the first load output 36 and the second load output 38 to complete the circuit. In the on state of the first MOSFET 20, the anode of the first diode 22 is shorted to ground, and charge on the output capacitor 32 causes the first diode 22 to remain in a reverse mode of operation. Energy stored in the output capacitor 32 causes a current to continue flowing into the load (not shown).In particular, the speed at which the first MOSFET 20 is able to transition between the off state and the on state determines numerous operating characteristics of the boost converter circuitry 28. Faster switching speeds allow the boost converter circuitry 28 to operate in a continuous conduction mode in which the current supplied by the boost inductor 30 in a single switching period is reduced. Generally, silicon devices cannot achieve speeds sufficient to operate in a continuous conduction mode and instead need to operate in a discontinuous conduction mode. The reduced current delivery requirements provided by switching the first MOSFET 20 at high speeds result in a reduced requirement for energy storage by the boost inductor 30 and reduced electromagnetic interference (EMI), which simplifies the construction of the electromagnetic filter circuit associated with the boost converter circuitry 28. As a result, the inductance of the boost converter may be reduced without compromising the performance of the boost converter circuitry 28. Generally, the inductance value of an inductor is proportional to its size. As a result, the size of the boost inductor 30 can be reduced as well. Further, the inductance value and the size of an inductor is proportional to the cost thereof. Because boost inductor 30 may be one of the most expensive parts of boost converter circuitry 28, it may be highly useful to take advantage of the high switching speed of first MOSFET 20 to reduce this cost. In one embodiment, the inductance value of the boost inductor 30 may be less than 450 μH due to the switching speeds achievable by the first MOSFET 20 as described herein. For example, the inductance of the boost inductor 30 may be between 25 μH and 150 μH, may be between 150 μH and 300 μH, and may be between 300 μH and 450 μH. Further, the total volume of the boost inductor 30 may be less than 7 cubic inches (e.g., between 1 cubic inch and 3 cubic inches, between 3 cubic inches and 5 cubic inches, and between 5 cubic inches and 7 cubic inches), and the total weight of the boost inductor 30 may be less than one pound (e.g., between 0.1 pound and 0.3 pounds, between 0.3 pounds and 0.6 pounds, and between 0.6 pounds and 0.9 pounds), in some embodiments.FIG. 5 illustrates boost converter circuitry 28 in accordance with an alternative embodiment of the present disclosure. Boost converter circuitry 28 shown in FIG. 5 is substantially similar to that shown in FIG. 4 except that boost converter circuitry 28 shown in FIG. 5 includes an inner-loop capacitor 40 (inner-loop capacitor) connected between first load output 36 and second load output 38 (parallel to output capacitor 32). In particular, the inner loop capacitor 40 is within the power converter circuitry 18 itself. Specifically, the inner-loop capacitor 40 closes the loop between the cathode of the first diode 22 and the source contact (S) of the first MOSFET 20 in as short a length as possible. This improves the performance of the power converter circuitry 18 by reducing parasitic inductances and thus reducing ringing (ringing) and other phenomena that reduce the performance. In the embodiment shown in FIG. 5, the inner loop capacitor 40 may be a high frequency capacitor, such as a ceramic capacitor, while the output capacitor 32 may be a relatively low frequency capacitor, such as an electrolytic capacitor or a polymer film capacitor. However, the output capacitor 32 and the inner loop capacitor 40 may be any type of capacitor without departing from the principles described herein.FIG. 6 illustrates boost converter circuitry 28 in accordance with an additional embodiment of the present disclosure. The boost converter circuitry shown in FIG. 6 is substantially similar to that shown in FIG. 4 except that the boost converter circuitry 28 shown in FIG. 6 includes a snubber capacitor 44 and a snubber resistor 46 connected in series between the first load output 36 and the second load output 38. As discussed above, the snubber capacitor 44 and the snubber resistor 46 may be within the power converter circuitry 18 to reduce the length of the snubber loop between the cathode of the first diode 22 and the source contact (S) of the first MOSFET 20. The snubber circuitry 42 effectively reduces transient signals occurring at the cathode of the first diode 22. In particular, ringing (ringing) that occurs as a result of excursions in the current provided at the cathode of the first diode 22 can be significantly reduced by the snubber circuitry 42. A reduction in this ringing process prevents ringing and sub-oscillations in the output, so that the reliability and the operating behavior of boost converter circuit arrangement 28 is increased predominantly by lowering the radiated and conducted EMI.FIG. 7 shows a view of a substrate 48 within the housing 12 in accordance with an embodiment of the present disclosure. In particular, the substrate 48 may be an active metal brazing (AMB) substrate that includes an insulating aluminum nitride base layer 50 and a first conductive layer 52 on a first surface of the aluminum nitride base layer 50. As discussed herein, an active metal solder (AMB) substrate is a substrate in which conductive layers deposited on a base layer have been soldered in a high temperature vacuum soldering process to form a strong bond between the conductive layers and the insulating base layer. Generally, AMB substrates are stronger than their conventional counterparts formed from technologies such as Direct Bond Copper (DBC) and the like. The use of an AMB substrate provides the necessary strength to the aluminum nitride base layer 50 to render it wearable for use in the power converter module 10 that does not include a base plate to increase the structural integrity thereof as in conventional designs. Aluminum nitride generally has much better thermal conduction properties compared to conventional substrate materials such as aluminum oxide. The increased thermal conductivity provided by the use of the aluminum nitride base layer 50 allows the switching components in the power converter module 10 to operate at lower temperatures, which is converted to higher power levels, higher efficiency, higher reliability, or all three.In other embodiments, the substrate 48 is an active metal solder (AMB) substrate having an insulating silicon nitride base layer 50 and a first conductive layer 52 on a first surface of the silicon nitride base layer 50. silicon nitride may have similar properties to aluminum nitride as discussed above, and therefore may increase the performance of the power converter module 10. In another embodiment, the substrate may be a DBCS substrate with an aluminum nitride or silicon nitride base layer, which may allow similar performance improvements to those discussed above.The first conductive layer 52 is etched to form a desired pattern on the first surface of the aluminum nitride base layer 50. Wire bonds (i.e., wire bonds) 54 connect the first MOSFET 20, the first diode 22, the second MOSFET 24, and the second diode 26 to various portions of the first conductive layer 52 to connect the various components as described above with reference to FIG. 3. The particular pattern of the first conductive layer 52 is chosen to minimize the distance from the gate contact (G) of each one of the first MOSFET 20 and the second MOSFET 24 to their respective I / O pins 14, minimize the length of the wire bonds (wire bonds) 54, and optimize current flow through the power conversion module 10. In one embodiment, the pattern of the first conductive layer 52 and routing of the wire bonds 54 are constructed such that the power circuit path has a maximum length of about 50 mm and the gate control path has a maximum length of about 20 mm. As defined herein, the gate control path is the total distance (as determined by tracing the path) between the I / O pin 14O (shown in FIG. 3 ) and the I / O pin 14P (also shown in FIG. 3 ). Further, as defined herein, the power switching path is the total distance (as determined by tracing the path) between the I / O pin 14E and the I / O pin 14F to the I / O pin 14C and the I / O pin 14D (all of which are shown in FIG. 3 ). Minimizing the power circuit path length below the gate control path length reduces the leakage inductance in the power converter module 10, which may be less than 15 nH, in accordance with some embodiments. In one embodiment, wire bonds 54 in the gate control path have a diameter of about 5mil, while wire bonds 54 in the power circuit path have a diameter of about 15mil. A greater number or lesser number of data links 54 may be used to form a particular branch of the particular power path based on a desired current carrying capacity thereof.FIG. 8 shows a cross-sectional view of the housing 12 and the substrate 48 through the section line A-A' shown in FIG. 7. As shown in FIG. 8, the substrate 48 is mounted in the package 12 and includes the aluminum nitride base layer 50, the first conductive layer 52 on which the first diode 22 is mounted via a die attach material 56 (solder mount material) and connected via the data links 54, and a second conductive layer 58. It should be noted, as discussed above, that the power conversion module 10 does not include a base plate. Accordingly, the substrate 48 must be sufficiently robust to support the power converter circuitry 18 formed on the first conductive layer 52. Further, since silicon carbide devices are generally higher power density devices that generate a significant amount of heat, it is desirable that the substrate 48 have a relatively low thermal resistance such that the substrate 48 is capable of effectively dissipating heat. The use of an AMB substrate as discussed above provides a strong substrate 48 capable of effectively dissipating heat. In an embodiment, the insulating base layer 50 may have a minimum thermal conductivity of 30 W / K to provide a low thermal resistance between the power converter circuitry 18 and the second conductive layer 58. As a result, the power converter circuitry 18 may be operated to provide additional power output, efficiency, or both.Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are within the scope of the concepts disclosed herein and the following claims.

Claims

A power converter module (10) comprising: an active metal solder substrate (48) comprising an aluminum nitride base layer (50), a first conductive layer (52) on a first surface of the aluminum nitride base layer (50), and a second conductive layer (58) on a second surface of the aluminum nitride base layer (50) opposite the first surface; power converter circuitry (18) on the active metal solder substrate (48) and a plurality of silicon carbide switching components coupled together via the first conductive layer (52); one or more wire bonds (54) such that a gate control path has a maximum length of about 20 mm, wherein the power converter circuitry (18) is configured to provide an output voltage greater than 650 V, an output power greater than 900 W, and operation at a switching frequency greater than 40 kHz; and a housing (12) enclosing the active metal solder substrate (48), wherein a footprint area of the housing (12) is less than or equal to about 20,46 cm 2.The power converter module (10) of claim 1, wherein the first conductive layer (52) is directly on the first surface of the aluminum nitride base layer (50) and the second conductive layer (58) is directly on the second surface of the aluminum nitride base layer (50).The power converter module (10) of claim 1, wherein the first conductive layer (52) is etched to form a desired connection pattern between the plurality of silicon carbide switching components.The power converter module (10) of claim 3, wherein the plurality of silicon carbide switching components are coupled to the first conductive layer (52) via the one or more wire bonds (54).The power converter module (10) of claim 4, wherein the first conductive layer (52) is etched and the one or more wire bonds (54) are laid such that a power circuit path has a maximum length of about 50 mm.The power converter module (10) of claim 1, wherein the power converter circuitry (18) is a boost (boost) converter configured to receive a DC input voltage (DC) and provide a stepped-up DC output voltage.The power converter module (10) of claim 6, wherein the power converter circuitry comprises a silicon carbide metal oxide semiconductor field effect transistor (20, 24) connected in series with a silicon carbide Schottky diode (22, 26).The power converter module (10) of claim 1, wherein the power converter circuitry (18) has switching losses between 5 mJ / A and 100 mJ / A.The power converter module (10) of claim 1, wherein the active metal solder substrate (48) has a thermal conductivity greater than about 30 W / m-K.The power converter module (10) of claim 1, wherein the power converter circuitry (18) is a buck (buck) converter, a half bridge converter, a full bridge converter, a single phase converter, or a three phase converter.The power converter module (10) of claim 1, wherein the power converter circuitry (18) is configured to provide an output voltage greater than 1200V and an output power greater than 30 kW.A power converter module (10) comprising: a base plate; a substrate (48) on the base plate; one or more of silicon carbide switching components on the substrate (48); and a housing (12) over the base plate, the substrate (48), and the one or more of silicon carbide switching components, wherein the housing (12) has a footprint less than or equal to 25 cm 2.The power converter module (10) of claim 12, wherein the housing (12) has a footprint greater than 5 cm 2.The power converter module (10) of claim 12, wherein the substrate (48) comprises: an aluminum nitride base layer (50); a first conductive layer (52) on a first surface of the aluminum nitride base layer (50); and a second conductive layer (58) on a second surface of the aluminum nitride base layer (50) opposite the first surface.The power converter module (10) of claim 14, wherein the one or more of silicon carbide switching components are on the first conductive layer (52) and the second conductive layer (58) is on the base plate.The power converter module (10) of claim 14, wherein the first conductive layer (52) is etched to form a desired connection pattern between the one or more of silicon carbide switching components.The power converter module (10) of claim 16, wherein the one or more silicon carbide switching components are coupled to the first conductive layer (52) via one or more wire bonds (54).The power converter module (10) of claim 17, wherein the one or more wire bonds (54) are laid such that a power circuit path has a maximum length of about 50 mm and a gate control path has a maximum length of about 20 mm.The power converter module (10) of claim 12, wherein the power converter module (10) is a boost (boost) converter configured to receive a DC input voltage (DC) and provide a stepped-up DC output voltage.The power converter module (10) of claim 19, wherein the one or more of silicon carbide switching components comprises a field effect transistor (20, 24) connected in series with a Schottky diode (22, 26).The power conversion module (10) of claim 20, wherein: the metal oxide semiconductor field effect transistor (20, 24) comprises a drain contact (D), a gate contact (G), and a source contact (S); the Schottky diode (22, 26) comprises an anode coupled to the drain contact (D) of the metal oxide semiconductor field effect transistor (20, 24) and a cathode; and the power conversion module (10) additionally comprises a snubber circuit (42) coupled between the cathode of the Schottky diode (22, 26) and the source contact (S) of the metal oxide semiconductor field effect transistor (20, 24).The power conversion module (10) of claim 20, wherein: the metal oxide semiconductor field effect transistor (20, 24) comprises a drain contact (D), a gate contact (G), and a source contact (S); the Schottky diode (22, 26) comprises an anode coupled to the drain contact (D) of the metal oxide semiconductor field effect transistor (20, 24) and a cathode; and the power conversion module (10) additionally comprises inner loop capacitor (40) provided on the substrate (48) and connected between the cathode of the Schottky diode (22, 26) and the source contact (S) of the metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 12, wherein the one or more of silicon carbide switching components provide a buck (buck) converter, a half bridge converter, a full bridge converter, or a three phase converter.A power converter module (10) comprising: a base plate; a substrate (48) on the base plate; one or more of silicon carbide switching components on the substrate (48), the one or more of silicon carbide switching components occupying an active area of less than 30 mm 2 per silicon carbide switching component; and a housing (12) over the base plate, the substrate (48), and the one or more of silicon carbide switching components.The power converter module (10) of claim 24, wherein the substrate (48) comprises: an aluminum nitride base layer (50); a first conductive layer (52) on a first surface of the aluminum nitride base layer (50); and a second conductive layer (58) on a second surface of the aluminum nitride base layer (50) opposite the first surface.The power converter module (10) of claim 25, wherein the one or more of silicon carbide switching components are on the first conductive layer (52) and the second conductive layer (58) is on the base plate.A power converter module (10) comprising: a substrate (48) comprising a base layer (50), a first conductive layer (52) on a first surface of the base layer (50), and a second conductive layer (58) on a second surface of the base layer (50) opposite the first surface, wherein a thickness of the first conductive layer (52) is greater than 0.5 mm; one or more of silicon carbide switching components on the first conductive layer (52) of the substrate (48); and a housing (12) over the substrate (48) and the one or more of silicon carbide switching components.The power converter module (10) of claim 27, wherein the thickness of the first conductive layer (52) is less than 2.0 mm.A power converter module (10) comprising: a substrate (48); power converter circuitry (18) on the substrate (48), wherein the power converter circuitry (18) comprises a plurality of switching components coupled together via a conductive layer (52) on the substrate (48) and configured to selectively supply power to a load; wherein a leakage inductance of the power converter circuitry (18) is less than 15 nH, and wherein the power converter circuitry (18) is configured as boost converter circuitry (28).The power converter module (10) of claim 29, wherein the power converter circuitry (18) is divided into two parts each comprising a channel; the plurality of switching components are implemented with a gate control path and a power circuit path; and a length of the gate control path and a length of the power circuit path are implemented such that a leakage inductance of the power converter circuitry (18) is less than 15 nH.The power converter module (10) of claim 30, wherein a length of the power circuit path is less than 50 mm, and wherein the power converter circuitry (18) comprises a dual channel boost converter.The power converter module (10) of claim 31, wherein the length of the gate control path is less than 20 mm.The power converter module (10) of claim 32, wherein: the conductive layer (52) is etched on the substrate (48) to form a connection pattern between the plurality of switching components; and the plurality of switching components are coupled to portions of the connection pattern of the conductive layer (52), and the plurality of switching components are additionally coupled to other portions of the connection pattern via one or more wire bonds (54).The power converter module (10) of claim 29 additionally comprising snubber circuitry (42) coupled to at least one of the plurality of switching components, the plurality of switching components comprising silicon carbide semiconductor components.The power converter module (10) of claim 29, wherein the power converter circuitry (18) is configured to provide an output voltage greater than 650 V and an output power greater than 900 W and operate at a switching frequency greater than 40 kHz.A power conversion module (10) comprising: at least one metal oxide semiconductor field effect transistor (20, 24) comprising a drain contact (D), a gate contact (G) and a source contact (S); at least one diode (22, 26) comprising an anode coupled to the drain contact (D) of the at least one metal oxide semiconductor field effect transistor (20, 24) and a cathode; and snubber circuitry (42) coupled between the cathode of the at least one diode (22, 26) and the source contact (S) of the at least one metal oxide semiconductor field effect transistor (20, 24), wherein the at least one metal oxide semiconductor field effect transistor (20, 24) and the at least one diode (22, 26) are configured as boost converter circuitry (28).The power converter module (10) of claim 36, wherein the at least one diode (22, 26) is configured and arranged externally of the at least one metal oxide semiconductor field effect transistor (20, 24); and wherein the boost converter circuitry (28) is connected to a boost inductor (30).The power converter module (10) of claim 36, wherein the snubber circuitry (42) is configured to reduce transient signals at the cathode of the at least one diode (22, 26); and wherein the boost converter circuitry (28) is divided into two portions, each of which comprises a channel.The power converter module (10) of claim 36, wherein the snubber circuitry (42) comprises a snubber capacitor (44) connected in series with a snubber resistor (46).The power conversion module (10) of claim 36, wherein the power conversion module (10) is configured to provide an output voltage greater than 650 V and an output power greater than 900 W and operate at a switching frequency greater than 40 kHz.The power converter module (10) of claim 36, wherein the at least one metal oxide semiconductor field effect transistor (20, 24) is a silicon carbide metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 36, wherein the at least one diode (22, 26) is a silicon carbide diode (22, 26).A power conversion module (10) comprising: a substrate (48); at least one metal oxide semiconductor field effect transistor (20, 24) disposed on the substrate (48), the at least one metal oxide semiconductor field effect transistor (20, 24) comprising a drain contact (D), a gate contact (G) and a source contact (S); at least one diode (22, 26) disposed on the substrate (48) and connected in series with the at least one metal oxide semiconductor field effect transistor (20, 24) and comprising an anode coupled to the drain contact (D) of the at least one metal oxide semiconductor field effect transistor (20, 24); and an inner loop capacitor (40) arranged on the substrate (48), which capacitor is coupled between a cathode of the at least one diode (22, 26) and the source contact (S) of the at least one metal oxide semiconductor field effect transistor (20, 24), wherein the at least one metal oxide semiconductor field effect transistor (20, 24) and the at least one diode (22, 26) are configured as a boost converter circuit arrangement (28).The power converter module (10) of claim 43, wherein the at least one diode (22, 26) is configured and arranged externally of the at least one metal oxide semiconductor field effect transistor (20, 24); and wherein the boost converter circuitry (28) is connected to a boost inductor (30).The power converter module (10) of claim 43 additionally comprising snubber circuitry (42) coupled to the at least one metal oxide semiconductor field effect transistor (20, 24); wherein the inner loop capacitor (40) is configured to reduce parasitic inductance at the cathode of the at least one diode (22, 26).The power converter module (10) of claim 45, wherein the inner loop capacitor (40) is a high frequency ceramic capacitor (40); and wherein the boost converter circuitry (28) is connected to the boost inductor (30).The power converter module (10) of claim 43, wherein the inner loop capacitor (40) is a high frequency ceramic capacitor (40); and wherein the boost converter circuitry (28) is connected to a boost inductor (30).The power converter module (10) of claim 43, wherein the power converter module (10) is configured to provide an output voltage greater than 650 V and an output power greater than 900 W and operate at a switching frequency greater than 40 kHz; and wherein the power converter circuitry (18) comprises a dual-channel boost converter.A power converter module (10) comprising: a housing (12); a substrate (48) disposed in the housing (12), the substrate (48) comprising a base layer (50) and a conductive layer (52) on a surface of the base layer (50); and a power converter circuit assembly (18) disposed on the substrate (48) comprising at least two silicon carbide switching components coupled to each other via the conductive layer (52); wherein the power converter module (10) does not have a base plate.The power converter module (10) of claim 49, wherein the substrate (48) is a direct bond copper substrate (48).The power converter module (10) of claim 50, wherein the base layer (50) on the direct bond copper substrate (48) comprises aluminum nitride or silicon nitride.The power converter module (10) of claim 49, wherein the substrate (48) is an active metal solder substrate (48).The power converter module (10) of claim 49, wherein the power converter circuitry (18) is a buck (buck) converter, a half bridge converter, a full bridge converter, a single phase converter, or a three phase converter.The power converter module (10) of claim 49, wherein the power converter circuitry (18) has a multi-stage topology.The power converter module (10) of claim 54, wherein the multi-stage topology is a transistor-type neutral point clamp or a transistor-type neutral point clamp.The power converter module (10) of claim 49, wherein the power converter circuitry (18) is a boost (boost) converter configured to receive a DC input voltage (DC) and provide a stepped-up DC output voltage.The power converter module (10) of claim 49, wherein the power converter circuitry (18) comprises at least one silicon carbide metal oxide semiconductor field effect transistor (20, 24) connected in series with at least one silicon carbide Schottky diode (22, 26).The power converter module (10) of claim 57, wherein the at least one silicon carbide Schottky diode (22, 26) is coupled between a drain contact (D) of the at least one silicon carbide metal oxide semiconductor field effect transistor (20, 24) and a first load output (36) of the power converter circuitry (18), and a source contact (S) of the at least one silicon carbide metal oxide semiconductor field effect transistor (20, 24) is coupled to a second load output (38) of the power converter circuitry (18).The power conversion module (10) according to claim 58, further comprising an inner loop capacitor (40) provided on the substrate (48) and connected between a cathode of the at least one silicon carbide Schottky diode (22, 26) and the source contact (S) of the silicon carbide metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 58 additionally comprising a snubber circuit arrangement (42) connected between a cathode of the at least one silicon carbide Schottky diode (22, 26) and the source contact (S) of the silicon carbide metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 60, wherein the snubber circuitry (42) comprises a resistor (46) connected between the first load output (36) and the second load output (38).The power converter module (10) of claim 61, wherein the snubber circuitry (42) comprises a capacitor (44) connected in series between the first load output (36) and the second load output (38).A power converter module (10) comprising: a housing (12); a substrate (48) comprising a base layer (50) and a first conductive layer (52) on a first surface of the base layer (50) and a second conductive layer (58) on a second surface of the base layer (50) opposite the first surface; and power converter circuitry (18) disposed on the substrate (48) comprising at least two silicon carbide switching components coupled together via the first conductive layer (52), wherein the at least two silicon carbide switching components form a plurality of channels and each channel of the plurality of channels comprises at least one silicon carbide transistor (20, 24). wherein the power converter module (10) does not have a base plate.The power converter module (10) of claim 63, wherein each channel of the plurality of channels additionally comprises at least one silicon carbide diode (22, 26) connected in series with the at least one silicon carbide transistor (20, 24).The power converter module (10) of claim 64, wherein the at least one silicon carbide transistor (20, 24) comprises at least one silicon carbide metal oxide semiconductor field effect transistor (20, 24) and the at least one silicon carbide diode (22, 26) comprises at least one silicon carbide Schottky diode (22, 26).The power conversion module (10) according to claim 65, further comprising an inner loop capacitor (40) provided on the substrate (48) and connected between a cathode of the at least one silicon carbide Schottky diode (22, 26) and a source contact (S) of the at least one silicon carbide metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 65, wherein the at least one silicon carbide Schottky diode (22, 26) is coupled between a drain contact (D) of the at least one silicon carbide metal oxide semiconductor field effect transistor (20, 24) and a first load output (36) of the power converter circuitry (18), and a source contact (S) of the at least one silicon carbide metal oxide semiconductor field effect transistor (20, 24) is coupled to a second load output (38) of the power converter circuitry (18).The power converter module (10) of claim 67 additionally comprising a snubber circuit arrangement (42) connected between a cathode of the at least one silicon carbide Schottky diode (22, 26) and the source contact (S) of the silicon carbide metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 68, wherein the snubber circuitry (42) comprises a resistor (46) connected between the first load output (36) and the second load output (38).The power converter module (10) of claim 69, wherein the snubber circuitry (42) comprises a capacitor (44) connected in series between the first load output (36) and the second load output (38).A power converter module (10) comprising: a substrate (48) comprising a conductive layer (52); and power converter circuitry (18) disposed on the substrate (48), the power converter circuitry (18) comprising a plurality of switching components coupled to each other via the conductive layer (52), the plurality of switching components configured to selectively supply power to a load; wherein a leakage inductance of the power converter circuitry (18) is less than 15 nH, and wherein the power converter circuitry (18) is configured as a buck (buck) converter circuitry, a half bridge converter circuitry, a full bridge converter circuitry, a single phase converter circuitry, a three phase converter circuitry, a neutral point clamped circuitry, and / or a transistor type neutral point clamped circuitry.The power converter module (10) of claim 71, wherein the power converter circuitry (18) is configured to include at least two channels; and wherein each of the two channels is configured with an efficiency between about 96% and 99.5%.The power converter module (10) of claim 72, wherein each of the at least two channels comprises a gate control path and a power circuit path; and wherein a length of the gate control path is less than 20 mm.The power converter module (10) of claim 71, wherein: the conductive layer (52) of the substrate (48) is etched to form a connection pattern between the plurality of switching components; and the plurality of switching components are coupled to portions of the connection pattern of the conductive layer (52), and the plurality of switching components are additionally coupled to other portions of the connection pattern via one or more wire bonds (54).The power converter module (10) of claim 71 : wherein the power converter circuitry (18) is configured to include at least two channels; and wherein each of the two channels is configured for switching losses less than or equal to 300 W when operating at switching speeds greater than 40 kHz.The power converter module (10) of claim 75: wherein each of the at least two channels comprises a gate control path and a power circuit path; and wherein a length of the power circuit path is less than 50 mm.The power converter module (10) of claim 75: wherein each of the at least two channels comprises a gate control path and a power circuit path; and wherein a length of the gate control path is less than 20 mm.The power converter module (10) of claim 71 additionally comprising snubber circuitry (42) coupled to at least one of the plurality of switching components, the plurality of switching components comprising silicon carbide switching components.A power converter module (10) comprising: a substrate (48) comprising a conductive layer (52); power converter circuitry (18) disposed on the substrate (48), the power converter circuitry (18) comprising a plurality of switching components coupled together via the conductive layer (52), the plurality of switching components configured to selectively supply power to a load; wherein the power converter circuitry (18) is configured to comprise at least two channels; and wherein each of the two channels is configured with an efficiency between about 96% and 99.5%.The power converter module (10) of claim 79, wherein a leakage inductance of the power converter circuitry (18) is less than 15 nH.The power converter module (10) of claim 79: wherein each of the at least two channels comprises a gate control path and a power circuit path; and wherein a length of the power circuit path is less than 50 mm.The power converter module (10) of claim 79: wherein each of the at least two channels comprises a gate control path and a power circuit path; and wherein a length of the gate control path is less than 20 mm.The power converter module (10) of claim 79, wherein: the conductive layer (52) of the substrate (48) is etched to form a connection pattern between the plurality of switching components; and the plurality of switching components are coupled to portions of the connection pattern of the conductive layer (52), and the plurality of switching components are additionally coupled to other portions of the connection pattern via one or more wire bonds (54).The power converter module (10) of claim 79, wherein each of the two channels is configured for switching losses less than or equal to 300 W when operating at switching speeds greater than 40 kHz.The power converter module (10) of claim 79 additionally comprising snubber circuitry (42) coupled to at least one of the plurality of switching components, the plurality of switching components comprising silicon carbide switching components.The power converter module (10) of claim 79, wherein the power converter circuitry (18) is configured as boost converter circuitry (28), buck (buck) converter circuitry, half bridge converter circuitry, full bridge converter circuitry, single phase converter circuitry, three phase converter circuitry, neutral point clamped circuitry, and / or as transistor-type neutral point clamped circuitry.A power converter module (10) comprising: a substrate (48) comprising a conductive layer (52); and power converter circuitry (18) disposed on the substrate (48), the power converter circuitry (18) comprising a plurality of switching components coupled together via the conductive layer (52), the plurality of switching components configured to selectively supply power to a load; wherein the power converter circuitry (18) is configured to comprise at least two channels; wherein each of the two channels is configured for switching losses less than or equal to 300 W when operating at switching speeds greater than 40 kHz, and wherein the power converter circuitry (18) is configured as a boost converter circuitry (28), a buck (buck) converter circuitry, a half bridge converter circuitry, a full bridge converter circuitry, a single phase converter circuitry, a three phase converter circuitry, a neutral point clamped circuitry, and / or as a transistor type neutral point clamped circuitry.The power converter module (10) of claim 87, wherein each of the two channels is configured with an efficiency between about 96% and 99.5%.The power converter module (10) of claim 87: wherein each of the at least two channels comprises a gate control path and a power circuit path; and wherein a length of the power circuit path is less than 50 mm.The power converter module (10) of claim 87: wherein each of the at least two channels comprises a gate control path and a power circuit path; and wherein a length of the gate control path is less than 20 mm.The power converter module (10) of claim 87, wherein the conductive layer (52) is etched on the substrate (48) to form a connection pattern between the plurality of switching components; and the plurality of switching components are coupled to portions of the connection pattern of the conductive layer (52), and the plurality of switching components are additionally coupled to other portions of the connection pattern via one or more wire bonds (54).The power converter module (10) of claim 87, wherein a leakage inductance of the power converter circuitry (18) is less than 15 nH.The power converter module (10) of claim 87 additionally comprising snubber circuitry (42) coupled to at least one of the plurality of switching components, the plurality of switching components comprising silicon carbide switching components.A power conversion module (10) comprising: at least one metal oxide semiconductor field effect transistor (20, 24) comprising a drain contact (D), a gate contact (G), and a source contact (S); at least one diode (22, 26) comprising an anode coupled to the drain contact (D) of the at least one metal oxide semiconductor field effect transistor (20, 24) and a cathode; and a snubber circuit arrangement (42) coupled between the cathode of the at least one diode (22, 26) and the source contact (S) of the at least one metal oxide semiconductor field effect transistor (20, 24), wherein the at least one metal oxide semiconductor field effect transistor (20, 24) and the at least one diode (22, 26) comprise a power converter circuit arrangement (18) configured as a buck (buck) converter circuit arrangement, a half bridge converter circuit arrangement, a full bridge converter circuit arrangement, a single phase converter circuit arrangement, a three phase converter circuit arrangement, a neutral point clamped circuit arrangement and / or as a transistor type neutral point clamped circuit arrangement.The power converter module (10) of claim 94: wherein the power converter circuitry (18) is configured to comprise at least two channels; and wherein each of the two channels is configured with an efficiency between about 96% and 99.5%.The power converter module (10) of claim 94: wherein the power converter circuitry (18) is configured to include at least two channels; and wherein each of the two channels is configured for switching losses less than or equal to 300 W when operating at switching speeds greater than 40 kHz.The power converter module (10) of claim 94, wherein a leakage inductance of the power converter circuitry (18) is less than 15 nH.The power converter module (10) of claim 94, wherein the at least one diode (22, 26) is configured and arranged externally of the at least one metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 94, wherein the snubber circuitry (42) is configured to reduce transient signals at the cathode of the at least one diode (22, 26).The power converter module (10) of claim 94, wherein the snubber circuitry (42) comprises a snubber capacitor (44) connected in series with a snubber resistor (46).The power conversion module (10) of claim 94, wherein the power conversion module (10) is configured to provide an output voltage greater than 650 V and an output power greater than 900 W and operate at a switching frequency greater than 40 kHz.The power converter module (10) of claim 94, wherein the at least one metal oxide semiconductor field effect transistor (20, 24) is a silicon carbide metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 102, wherein the at least one silicon carbide diode (22, 26) is at least one silicon carbide Schottky diode (22, 26).A power conversion module (10) comprising: a substrate (48); at least one metal oxide semiconductor field effect transistor (20, 24) disposed on the substrate (48), the at least one metal oxide semiconductor field effect transistor (20, 24) comprising a drain contact (D), a gate contact (G) and a source contact (S); at least one diode (22, 26) disposed on the substrate (48) in series with the at least one metal oxide semiconductor field effect transistor (20, 24) and comprising an anode coupled to the drain contact (D) of the at least one metal oxide semiconductor field effect transistor (20, 24); and an inner loop capacitor (40) disposed on the substrate (48) and coupled between a cathode of the at least one diode (22, 26) and the source contact (S) of the at least one metal oxide semiconductor field effect transistor (20, 24); wherein the at least one metal oxide semiconductor field effect transistor (20, 24) and the at least one diode (22, 26) comprise a power converter circuit arrangement (18) configured as a buck (buck) converter circuit arrangement, a half bridge converter circuit arrangement, a full bridge converter circuit arrangement, a single phase converter circuit arrangement, a three phase converter circuit arrangement, a neutral point clamped circuit arrangement and / or as a transistor type neutral point clamped circuit arrangement.The power converter module (10) of claim 104: wherein the power converter circuitry (18) is configured to comprise at least two channels; and wherein each of the two channels is configured with an efficiency between about 96% and 99.5%.The power converter module (10) of claim 104: wherein the power converter circuitry (18) is configured to comprise at least two channels; and wherein each of the two channels is configured for switching losses less than or equal to 300 W when operating at switching speeds greater than 40 kHz.The power converter module (10) of claim 104, wherein a leakage inductance of the power converter circuitry (18) is less than 15 nH.The power converter module (10) of claim 104, wherein the at least one diode (22, 26) is configured and arranged externally of the at least one metal oxide semiconductor field effect transistor (20, 24).The power converter module (10) of claim 104 additionally comprising snubber circuitry (42) coupled to the at least one metal oxide semiconductor field effect transistor (20, 24), wherein the inner loop capacitor (40) is configured to reduce parasitic inductance at the cathode of the at least one diode (22, 26).The power converter module (10) of claim 104, wherein the inner loop capacitor (40) is a high frequency ceramic capacitor (40).The power converter module (10) of claim 104, wherein the power converter module (10) is configured to provide an output voltage greater than 650 V and an output power greater than 900 W and operate at a switching frequency greater than 40 kHz.

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