Substrate processing device and placement table

Abstract

To provide a substrate processing device which has a placement table for a substrate that can suppress degradation of seal performance of a seal member and a placement table.SOLUTION: A substrate processing device includes a processing container 10, and a placement table 100 which has a base 26 and on which a substrate is placed. The base comprises: a first flow path 101 for circulating a heat medium at a first temperature; a first insulation layer 111 positioned below the first flow path; and a second flow path 102 positioned below the first insulation layer for circulating a heat medium at a second temperature. An O-ring 301 being a first seal member is placed between a bottom surface of the base and an upper surface of a cylindrical holding member 12 with an insulation property that supports the base.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a mounting stage. [Background technology]

[0002] The substrate processing apparatus has a mounting table for mounting a substrate in a processing chamber. An O-ring is provided between the bottom surface of the mounting table and a member disposed below the mounting table, sealing the vacuum space in the processing chamber from the atmospheric space below the mounting table and maintaining the vacuum state in the processing chamber.

[0003] For example, Patent Document 1 discloses that an electrostatic chuck for electrostatically adsorbing a substrate is provided on a mounting table in a processing vessel, and an O-ring is provided between the bottom surface of the electrostatic chuck and a base material arranged below the electrostatic chuck. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-107433 A Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique capable of suppressing deterioration of the sealing performance of a sealing member. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a substrate processing apparatus comprising a processing vessel, and a mounting table disposed within the processing vessel, the mounting table having a base and on which a substrate is placed, the base comprising a first flow path through which a heat medium at a first temperature flows, a first insulating layer disposed below the first flow path, and a second flow path disposed below the first insulating layer through which a heat medium at a second temperature flows. Effect of the Invention

[0007] According to one aspect, deterioration of the sealing performance of the seal member can be suppressed. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment; [Diagram 2] FIG. 2 is an enlarged schematic cross-sectional view of a mounting table according to an embodiment. [Diagram 3] FIG. 13 is an enlarged schematic cross-sectional view of a mounting table according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0010] [Substrate processing equipment] 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 is a RIE (Reactive Ion Etching) type substrate processing apparatus. However, the substrate processing apparatus 1 can also be used as a plasma etching apparatus, a plasma CVD apparatus, etc.

[0011] The substrate processing apparatus 1 has a cylindrical processing vessel 10 made of metal, for example, aluminum or stainless steel, and the inside of the processing vessel 10 serves as a processing chamber where plasma processing such as plasma etching, plasma CVD, etc. is performed. The processing vessel 10 is grounded.

[0012] A disk-shaped mounting table 100 for mounting a wafer W thereon is provided inside the processing vessel 10. The mounting table 100 has an electrostatic chuck 25 and a base 26. The electrostatic chuck 25 is disposed on the base 26. The base 26 is made of, for example, aluminum or a titanium alloy, and is supported by a cylindrical support 13 extending vertically upward from the bottom of the processing vessel 10 via an insulating cylindrical holding member 12.

[0013] The central portion of the electrostatic chuck 25 is configured by sandwiching an attraction electrode 25c made of a conductive film between dielectric films 25a. A DC power supply 29 is electrically connected to the attraction electrode 25c via a switch 28. The electrostatic chuck 25 holds the wafer W on the electrostatic chuck 25 by an electrostatic attraction force generated by a voltage applied from the DC power supply 29 to the attraction electrode 25c.

[0014] The electrostatic chuck 25 is composed of a disk-shaped central portion on which the wafer W is placed and an annular peripheral portion, and the height of the central portion is higher than the height of the peripheral portion. An edge ring 27 that annularly surrounds the edge of the substrate is placed on the upper surface of the peripheral portion. The edge ring 27 is also called a focus ring.

[0015] An exhaust path 14 is formed between the side wall of the processing vessel 10 and the cylindrical support 13. An annular baffle plate 15 is provided at the entrance or midway of the exhaust path 14. An exhaust port 16 is provided at the bottom of the exhaust path 14. An exhaust device 18 is connected to the exhaust port 16 via an exhaust pipe 17. The exhaust device 18 has a vacuum pump and reduces the pressure in the processing vessel 10 to a predetermined vacuum level. An automatic pressure control valve (not shown), which is a variable butterfly valve, is provided in the exhaust pipe 17, and the pressure in the processing vessel 10 is controlled by the automatic pressure control valve. A gate valve 20 for opening and closing a transfer port 19 for the wafer W is attached to the side wall of the processing vessel 10.

[0016] The substrate processing apparatus 1 has a first high frequency power supply 21 and a second high frequency power supply 22. The first high frequency power supply 21 is a power supply that generates a first high frequency power. The first high frequency power has a frequency suitable for generating plasma. The frequency of the first high frequency power is, for example, within a range of 27 MHz to 100 MHz. The first high frequency power supply 21 is connected to the mounting table 100 via a matching device 21a. The matching device 21a has a circuit for matching the output impedance of the first high frequency power supply 21 with the impedance on the load side (the mounting table 100 side).

[0017] The second high frequency power supply 22 is a power supply that generates a second high frequency power. The second high frequency power has a frequency lower than that of the first high frequency power. When the second high frequency power is used together with the first high frequency power, the second high frequency power is used as a bias high frequency power for attracting ions into the wafer W. The frequency of the second high frequency power is, for example, within a range of 400 kHz to 13.56 MHz. The second high frequency power supply 22 is connected to the mounting table 100 via a matching device 22a. The matching device 22a has a circuit for matching the output impedance of the second high frequency power supply 22 with the impedance on the load side (the mounting table 100 side).

[0018] It is also possible to generate plasma by using the second high frequency power without using the first high frequency power, that is, by using only a single high frequency power. In this case, the frequency of the second high frequency power may be a frequency higher than 13.56 MHz, for example, 40 MHz. The substrate processing apparatus 1 does not need to have the first high frequency power supply 21 and the matching box 21a. In this case, the second high frequency power supply 22 constitutes an example of a plasma generating unit.

[0019] A shower head 40 is disposed on the ceiling of the processing chamber 10 facing the mounting table 100. Thus, high frequency power from a first high frequency power supply 21 is applied between the mounting table 100 and the shower head 40.

[0020] With this configuration, the mounting table 100 also functions as a lower electrode, and the shower head 40 also functions as an upper electrode at a ground potential. The first high frequency power supply 21 may be connected to the shower head 40 via a matching box 21a.

[0021] The base 26 is provided with a first flow path 101 and a second flow path 102 at an upper and lower stage. A heat medium at a first temperature flows and circulates from the chiller unit 200 through pipes 202, 212, 213, and 203 in the first flow path 101. A heat medium at a second temperature flows and circulates from the chiller unit 200 through pipes 201, 211, 214, and 204 in the second flow path 102. The second temperature of the heat medium flowing in the second flow path 102 is higher than the first temperature of the heat medium flowing in the first flow path 101.

[0022] The first flow passage 101 is a spiral or concentric flow passage extending in the circumferential direction relative to the wafer mounting surface. The first flow passage 101 is provided over the entire wafer mounting surface of the electrostatic chuck 25, and the outermost flow passage is formed outside the outermost circumference of the wafer W. This can improve the controllability of the temperature of the wafer W and achieve uniformity of the temperature distribution of the wafer W in its surface.

[0023] A first heat insulating layer 111 is disposed below the first flow path 101. A second flow path 102 is disposed below the first heat insulating layer 111. A second heat insulating layer 112 is disposed below the second flow path 102. The second flow path 102 is a spiral or concentric flow path extending in the circumferential direction with respect to the wafer mounting surface. The second flow path 102 may have the same shape as the first flow path 101, or may have a different shape. The second flow path 102 is provided over the entire wafer mounting surface of the electrostatic chuck 25, and the outermost flow path is formed outside the outermost circumference of the wafer W. This can improve the controllability of the temperature of the base 26 below the first heat insulating layer 111 of the base 26.

[0024] The heat transfer gas supply unit 30 supplies a heat transfer gas between the back surface of the wafer W and the electrostatic chuck 25 via a gas supply line 31. As the heat transfer gas, a gas having thermal conductivity, such as He gas, is suitably used.

[0025] The O-ring 301 is disposed between the bottom surface of the base 26 and the upper surface of the cylindrical holding member 12. The O-ring 302 is disposed between the bottom surface of the base 26 and the joint portion 32 of the gas supply line 31.

[0026] The shower head 40 in the ceiling portion has an electrode plate 45 on the lower surface and an electrode support 41 that detachably supports the electrode plate 45. The electrode plate 45 has a large number of gas vent holes 46. A buffer chamber 44 is provided inside the electrode support 41, and a gas inlet 42 connected to the buffer chamber 44 is connected to a gas supply pipe 43, and the gas supply pipe 43 is connected to a process gas supply unit 47.

[0027] Each component of the substrate processing apparatus 1 is connected to a control unit 50. The control unit 50 controls each component of the substrate processing apparatus 1. Examples of each component include an exhaust device 18, a first high frequency power supply 21, a second high frequency power supply 22, a switch 28, a DC power supply 29, a heat transfer gas supply unit 30, a processing gas supply unit 47, and a chiller unit 200.

[0028] The control unit 50 includes a CPU 51 and a memory 52 (storage device), and reads and executes programs and processing recipes stored in the memory 52 to control a desired substrate processing in the substrate processing apparatus 1. The control unit 50 also controls the temperature of the heat medium supplied from the chiller unit 200, controls the exhaust device 18, and the like.

[0029] Magnets 48 extending in a ring shape or a concentric shape are arranged around the processing vessel 10, and a horizontal magnetic field directed in one direction is generated by the magnets 48 in the processing vessel 10 of the substrate processing apparatus 1. Also, a vertical RF electric field is generated by high frequency power applied between the mounting table 100 and the shower head 40. As a result, a magnetron discharge occurs through the processing gas in the processing vessel 10, and high density plasma is generated from the processing gas near the surface of the mounting table 100.

[0030] In the substrate processing apparatus 1, when processing a substrate, first, the gate valve 20 is opened, and the wafer W to be processed is loaded into the processing vessel 10 and placed on the electrostatic chuck 25. Heat media having a first temperature and a second temperature are supplied from the chiller unit 200 to the first flow path 101 and the second flow path 102, respectively. Then, the processing gas is introduced into the processing vessel 10 from the processing gas supply unit 47 at a predetermined flow rate and flow rate ratio, and the pressure inside the processing vessel 10 is set to a predetermined value by the exhaust device 18 or the like. Further, high frequency power is supplied to the mounting table 100 from the first high frequency power source 21 and the second high frequency power source 22, and a voltage is applied to the adsorption electrode 25c from the DC power source 29, so that the wafer W is adsorbed onto the electrostatic chuck 25. Also, a heat transfer gas is supplied to the back surface of the wafer W. Then, the processing gas discharged from the shower head 40 is turned into plasma, and a predetermined plasma processing is performed on the front surface of the wafer W by radicals and ions in the plasma.

[0031] [Placement table] Next, details of the configuration of the mounting table 100 according to an embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic cross-sectional view mainly showing an enlarged view of the base 26 of the mounting table 100 in Fig. 1. This figure mainly shows O-rings 301 and 302 arranged inside the base 26 and on the bottom surface of the base 26 among the configuration of the mounting table 100, and omits the electrostatic chuck 25, the edge ring 27, and the wafer W. Note that the mounting table 100 does not necessarily have to have the electrostatic chuck 25. When the electrostatic chuck 25 is not included, the upper part of the base 26 becomes the mounting surface for the wafer W.

[0032] The base 26 has a first flow path 101 through which a heat medium at a first temperature flows, and a first insulating layer 111 disposed below the first flow path 101. The base 26 further has a second flow path 102 disposed below the first insulating layer 111 and through which a heat medium at a second temperature flows, and a second insulating layer 112 disposed below the second flow path 102. O-rings 301, 302 are disposed between the bottom surface of the base 26 and the lower part of the second insulating layer 112 and members (the cylindrical holding member 12 and the joint part 32 of the gas supply line 31) that come into contact with the bottom surface of the base 26.

[0033] The first flow path 101 circulates a heat medium at a first temperature to cool the wafer. The heat medium flowing through the first flow path 101 may be a liquid such as Fluorinert, liquid nitrogen, or a specified gas. The first temperature is controlled to a temperature of −100° C. or lower (hereinafter also referred to as “extremely low temperature”). This allows the wafer mounting surface of the mounting table 100 to be locally cooled to a temperature in the extremely low temperature range.

[0034] In order to improve the heat exchange rate, the first flow path 101 preferably has a fin structure that increases the surface area in contact with the heat medium. In the example of Fig. 2, the first flow path 101 is provided with a fin structure 101a having several pillars. The multiple pillars of the fin structure 101a are formed from the top of the first flow path 101 downward with the heights of the pillars being staggered. This improves the heat exchange rate and allows the wafer W placed on the top of the first flow path 101 to be cooled to an extremely low temperature.

[0035] The structure provided in the first flow channel 101 may have a lattice structure or an uneven structure having recesses and / or protrusions instead of a fin structure. However, as long as the mechanical strength of the first flow channel 101 can be ensured, the first flow channel 101 does not need to have a fin structure or a lattice structure.

[0036] The first insulating layer 111 has first hollow spaces 111a, 111b formed so as to surround the first flow path 101 at the lower and side portions of the first flow path 101. As shown in Fig. 1, the first hollow spaces 111a, 111b are connected to an exhaust device 18 by metal piping 130, and are evacuated and controlled to a vacuum state by the exhaust device 18. This makes it possible to insulate the heat of the heat medium flowing through the first flow path 101 by the vacuum insulation effect, and to prevent the heat from being transmitted to the lower portion of the first insulating layer 111.

[0037] However, the present invention is not limited to this, and the first hollow spaces 111a and 111b may be controlled to a pressure lower than atmospheric pressure. This also provides a heat insulating effect. When a predetermined heat insulating effect can be obtained, the first heat insulating layer 111 has the first hollow space 111a at the bottom of the first flow path 101, and the first hollow space 111b does not have to be provided on the side.

[0038] With this configuration, the first insulating layer 111 isolates and insulates the region in the base 26 where the first flow path 101 is provided from the region below the first insulating layer 111. This allows the wafer W to be cooled to an extremely low temperature, and the vacuum insulation effect of the first insulating layer 111 can prevent the region below the first insulating layer 111 from being cooled to an extremely low temperature.

[0039] Although not shown in Fig. 2, the first hollow spaces 111a, 111b of the first insulation layer 111 may have a fin structure or a lattice structure to increase mechanical strength. However, it is important that the first hollow spaces 111a, 111b have as large a space as possible to reduce heat conduction and increase the vacuum insulation effect. For this reason, the fin structure or lattice structure of the first insulation layer 111 may not be provided if mechanical strength can be ensured without the structure from the standpoint of both mechanical strength and ensuring internal space.

[0040] A second flow path 102 is provided on the opposite side of the first flow path 101 with the first insulating layer 111 sandwiched therebetween. The second flow path 102 circulates a heat medium at a second temperature, for example, 0° C. or higher. This makes it possible to prevent the region on the opposite side of the first flow path 101 with the first insulating layer 111 sandwiched therebetween from being cooled to an extremely low temperature when cooled by the heat medium at, for example, −100° C. flowing through the first flow path 101.

[0041] The heat medium flowing through the second flow path 102 may be a liquid such as Fluorinert, or a predetermined gas. The type of the heat medium flowing through the second flow path 102 may be the same as or different from the heat medium flowing through the first flow path 101.

[0042] The second flow path 102 may have a fin structure that increases the surface area in contact with the heat medium in order to improve the heat exchange rate. For example, the second flow path 102 may be provided with a fin structure having several columns, similar to the first flow path 101. This improves the heat exchange rate, and the second flow path 102, which flows a heat medium at a second temperature close to room temperature, absorbs heat from the base 26, thereby increasing the temperature of the region of the base 26 in which the second flow path 102 is arranged. This makes it possible to efficiently suppress a temperature drop in the entire base 26 caused by circulating a very low temperature heat medium in the first flow path 101.

[0043] The structure provided in the second flow path 102 may have a lattice structure or an uneven structure having recesses and / or protrusions instead of a fin structure. However, as long as the mechanical strength of the second flow path 102 can be ensured, the second flow path 102 does not need to have a fin structure or a lattice structure.

[0044] The second insulating layer 112 has second hollow spaces 112a, 112b formed to surround the second flow path 102 at the lower and side portions of the second flow path 102. As shown in Fig. 1, the second hollow spaces 112a, 112b are connected to an exhaust device 18 by metal piping 131, and are evacuated and controlled to a vacuum state by the exhaust device 18. This makes it possible to further insulate the heat of the heat medium flowing through the first flow path 101 by the vacuum insulation effect, and to prevent the heat from being transmitted to the lower portion of the second insulating layer 112.

[0045] However, the present invention is not limited to this, and the pressure of the second hollow spaces 112a, 112b may be controlled to be lower than atmospheric pressure. This also provides a heat insulating effect. When a predetermined heat insulating effect can be obtained, the second heat insulating layer 112 has the second hollow space 112a at the bottom of the second flow path 102, and the second hollow space 112b does not have to be provided on the side.

[0046] With this configuration, a heat medium at a temperature close to room temperature is supplied to second flow path 102 to absorb heat from base 26, and second insulating layer 112 further isolates and insulates the region in base 26 where first flow path 101 is provided from the region below second insulating layer 112. As a result, even in an environment where wafer W is cooled to an extremely low temperature, the temperature of the region below second insulating layer 112 can be made higher than the glass transition point, and deterioration of the sealing performance of O-rings 301, 302 can be prevented.

[0047] Specifically, the O-rings 301 and 302 are made of fluororubber, silicone rubber, etc. The sealing performance of the O-rings 301 and 302 deteriorates when they are used at extremely low temperatures. Generally, when a substance is cooled, its fluidity decreases, and it changes from liquid to solid at a certain temperature (freezing point). The stable solid state is divided into a rubber state with rubber elasticity and a glass state in which the substance is completely frozen at an even lower temperature. Even when the O-ring is made of silicone rubber with a glass transition temperature of about -60°C, if the O-ring is used at a temperature below -60°C, the O-ring will become glassy and its sealing performance will deteriorate. As a result, the vacuum space U cannot be kept airtight from the atmospheric space A, and a vacuum leak will occur. Therefore, it is difficult to use the O-ring in a state where the O-ring can demonstrate its sealing function below the glass transition temperature.

[0048] In recent years, with the advancement of miniaturization and high integration of device structures, contact holes, etc., have become higher in aspect ratio. In etching high aspect ratios, it has been considered to perform etching by lowering the temperature of the wafer W to extremely low temperatures, but in this case, deterioration of the sealing performance of the O-ring becomes an issue.

[0049] In contrast, in the mounting table 100 having such a configuration, the cooling efficiency of the wafer W can be improved by circulating a heat medium at a first temperature, which is an extremely low temperature of, for example, −100° C. or lower, through the first flow passage 101. On the other hand, even if the first temperature is lower than the glass transition temperature of the O-rings 301 and 302, the mounting table 100 can perform vacuum insulation by the first insulating layer 111 provided below the first flow passage 101 and the second insulating layer 112 provided below the second flow passage 102. In addition, the mounting table 100 can absorb heat from the base 26 by flowing a heat medium at a second temperature, for example, room temperature, higher than the glass transition point through the second flow passage 102 provided below the first insulating layer 111.

[0050] This makes it possible to suppress a drop in temperature of the sealing surfaces of the O-rings 301 and 302 and to make the temperature of the sealing surfaces higher than the glass transition point. As a result, even in a structure in which the wafer W is cooled at an extremely low temperature, the vacuum space U in the processing vessel 10 can be sealed from the atmospheric space A below the base 26 by using the O-rings 301 and 302 without deteriorating the sealing performance of the O-rings 301 and 302. As a result, the vacuum space U can be kept airtight.

[0051] Furthermore, the hollow spaces of the first insulating layer 111 and the second insulating layer 112 absorb the load due to atmospheric pressure from the bottom side of the base 26 caused by the pressure difference between the vacuum space U and the atmospheric space A, thereby suppressing bending deformation of the wafer mounting surface.

[0052] Other than O-rings 301 and 302, an O-ring may be disposed at the joint between the bottom surface of base 26 and the tube through which the pusher pin passes, or an O-ring may be disposed between the bottom surface of base 26 and another member disposed therebelow. Even in this case, the sealing performance of the O-ring is not reduced, and the vacuum space U can be kept airtight by the O-ring.

[0053] Although not shown in Fig. 2, the second hollow spaces 112a, 112b of the second insulation layer 112 may have a fin structure or a lattice structure to increase mechanical strength. However, it is important that the second hollow spaces 112a, 112b have as large a space as possible to reduce heat conduction and increase the vacuum insulation effect. For this reason, the fin structure or lattice structure of the second insulation layer 112 may not be provided if mechanical strength can be ensured without the structure from the standpoint of both mechanical strength and ensuring internal space.

[0054] The second hollow spaces 112a, 112b may have the same shape as the first hollow spaces 111a, 111b or may have a different shape. The second hollow spaces 112a, 112b may be connected to the first hollow spaces 111a, 111b and form the same space, or may be separate spaces from the first hollow spaces 111a, 111b.

[0055] However, in order to enhance the heat insulating effect, the first hollow spaces 111a, 111b and the second hollow spaces 112a, 112b are all controlled to be reduced in pressure, so it is preferable to use a structure that can be easily controlled to be a vacuum space.

[0056] [Variations] When the first flow path 101, the first insulating layer 111, the second flow path 102 and the second insulating layer 112 are formed in a shape and dimensions that ensure the mechanical strength of the base 26, it is not necessary to provide a fin structure or a lattice structure in any of the structures, as in the mounting table 100 of the modified example shown in Figure 3.

[0057] Furthermore, the number of heat insulating layers is not limited to two, and may be one, multiple, or none. Furthermore, the number of flow paths disposed below the first flow path 101 is not limited to one, and may be multiple, or none.

[0058] Furthermore, the flow paths such as the second flow path 102 disposed below the first flow path 101 may be divided into a plurality of flow paths such as a low temperature line and a room temperature line, or may be a single line flow path.

[0059] Even if a cryogenic heat medium is circulated through the first flow path 101, if the sealing surfaces of the O-rings 301, 302 can be controlled to a temperature higher than the glass transition point by the first insulating layer 111, it is not necessary to provide the second flow path 102 and the second insulating layer 112. In this case, the O-rings 301, 302 are disposed below the first insulating layer 111 without the second flow path 102 and the second insulating layer 112 interposed therebetween.

[0060] [Manufacturing method] Next, a manufacturing method of the mounting table 100 according to an embodiment and a modified example will be described. The base 26 has a hollow structure in which the first flow path 101, the first heat insulating layer 111, the second flow path 102, and the second heat insulating layer 112 are formed.

[0061] Furthermore, in the base 26 of the mounting table 100 according to an embodiment, a fin structure 101a is formed in the first flow path 101. The base 26 having such a configuration is preferably manufactured by 3D printer technology or additive manufacturing technology. Specifically, a layered manufacturing technology using a metal material can be used. For example, a manufacturing technology that irradiates powder metal with a laser or electron beam to sinter it, a manufacturing technology that melts and deposits a material with a laser or electron beam while supplying powder metal or wire, and the like can be used. Note that these manufacturing methods are merely examples and are not limited thereto. The mounting table 100 including the base 26 may also be manufactured by 3D printer technology or additive manufacturing technology.

[0062] The mounting table and the substrate processing apparatus according to the embodiment and its modified examples disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiment can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The matters described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent.

[0063] The mounting table of the present disclosure can be applied to any type of substrate processing apparatus, including Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP), and ALD (Atomic Layer Deposition) apparatus. Although a plasma processing apparatus has been given as an example of a substrate processing apparatus, the substrate processing apparatus is not limited to a plasma processing apparatus as long as it is an apparatus that performs a predetermined process (e.g., a film forming process, an etching process, etc.) on a substrate. For example, it may be a CVD apparatus.

[0064] The above disclosed embodiments include, for example, the following aspects. (Appendix 1) A mounting table having a base and on which a substrate is placed, The base is a first flow path through which a heat transfer medium having a first temperature flows; a first insulating layer disposed below the first flow path; A seal member disposed under the first insulation layer; A mounting table having (Appendix 2) The first insulation layer has a first hollow space, The first hollow space is controlled to a pressure lower than atmospheric pressure. 2. The mounting table according to claim 1. (Appendix 3) The first hollow space has a fin structure or a lattice structure. Attachment 2. A mounting table as described in appendix 2. (Appendix 4) The first flow path has a fin structure or a lattice structure. The mounting table according to any one of claims 1 to 3. (Appendix 5) a second flow path through which a heat transfer medium having a second temperature flows, the second flow path being disposed under the first insulation layer; a second insulating layer disposed below the second flow path, The sealing member is disposed below the second insulating layer. The mounting table according to any one of claims 1 to 4. (Appendix 6) The second insulating layer has a second hollow space, The second hollow space is controlled to a pressure lower than atmospheric pressure. 6. A mounting table as described in appendix 5. (Appendix 7) The second hollow space has a fin structure or a lattice structure. 7. A mounting table as described in appendix 6. (Appendix 8) The second flow path has a fin structure or a lattice structure. The mounting table according to any one of claims 5 to 7. (Appendix 9) The second temperature is higher than the first temperature. The mounting table according to any one of claims 5 to 8. (Appendix 10) the second temperature is higher than the glass transition temperature of the seal member; The mounting table according to any one of claims 5 to 9. (Appendix 11) the first temperature is lower than the glass transition temperature of the seal member; The mounting table according to any one of claims 1 to 9. (Appendix 12) 12. The mounting table according to any one of claims 1 to 11, wherein the base is formed by a 3D printer technique or an additive manufacturing technique. (Appendix 13) A processing vessel; a substrate processing apparatus that is disposed in the processing chamber, has a base, and includes a mounting table on which a substrate is placed, The base is a first flow path through which a heat transfer medium having a first temperature flows; a first insulating layer disposed below the first flow path; A seal member disposed under the first insulation layer; The substrate processing apparatus includes: [Explanation of symbols]

[0065] 1: Substrate processing equipment 10: Processing container 15: Baffle plate 18: Exhaust system 21: First high frequency power source 22: Second high frequency power source 25: Electrostatic chuck 26: Foundation 27: Edge Ring 31: Gas supply line 32: Joint section 40: Shower head 47: Processing gas supply unit 50: Control unit 100:Placement table 101: First flow path 101a: Fin structure 111: First insulation layer 102: Second flow path 112: Second insulation layer 200: Chiller unit 301, 302: O-ring U: Vacuum space A: Atmospheric space

Claims

1. A processing vessel; a substrate processing apparatus that is disposed in the processing chamber, has a base, and includes a mounting table on which a substrate is placed, The base is a first flow path through which a heat medium having a first temperature flows; a first insulating layer disposed below the first flow path; a second flow passage arranged under the first insulation layer and through which a heat transfer medium having a second temperature flows; The substrate processing apparatus includes:

2. The first insulation layer has a first hollow space, The first hollow space is controlled to a pressure lower than atmospheric pressure. The substrate processing apparatus according to claim 1 .

3. The first heat insulating layer is formed so as to surround the first flow passage at a lower portion and a side portion of the first flow passage. The substrate processing apparatus according to claim 1 .

4. a second insulating layer disposed in a lower portion of the second flow path; The substrate processing apparatus according to any one of claims 1 to 3.

5. The second insulation layer has a second hollow space, The second hollow space is controlled to a pressure lower than atmospheric pressure. The substrate processing apparatus according to claim 4 .

6. The second heat insulating layer is formed so as to surround the second flow passage at a lower portion and a side portion of the second flow passage. The substrate processing apparatus according to claim 4 .

7. The first flow path, the first insulating layer, the second flow path, and the second insulating layer are formed inside the base which is integrally formed. The substrate processing apparatus according to any one of claims 4 to 6.

8. At least one of the first flow path, the first insulating layer, the second flow path, and the second insulating layer has a fin structure or a lattice structure. The substrate processing apparatus according to any one of claims 4 to 7.

9. The second temperature is higher than the first temperature. The substrate processing apparatus according to any one of claims 1 to 8.

10. A first seal member is disposed between a bottom surface of the base and an upper surface of a holding member supporting the base. The substrate processing apparatus according to any one of claims 1 to 9.

11. A second seal member is disposed between the bottom surface of the base and a joint portion of a gas supply line for a heat transfer gas. The substrate processing apparatus according to claim 10 .

12. A mounting table having a base and on which a substrate is placed, The base is a first flow path through which a heat medium having a first temperature flows; a first insulating layer disposed below the first flow path; a second flow passage arranged under the first insulation layer and through which a heat transfer medium having a second temperature flows; A mounting table comprising:

13. The first insulation layer has a first hollow space, The first hollow space is controlled to a pressure lower than atmospheric pressure. The mounting table according to claim 12 .

14. The first heat insulating layer is formed so as to surround the first flow passage at a lower portion and a side portion of the first flow passage. The mounting table according to claim 12 or 13.

15. a second insulating layer disposed in a lower portion of the second flow path; The mounting table according to any one of claims 12 to 14.

16. The second insulation layer has a second hollow space, The second hollow space is controlled to a pressure lower than atmospheric pressure. The mounting table according to claim 15 .

17. The second heat insulating layer is formed so as to surround the second flow passage at a lower portion and a side portion of the second flow passage. The mounting table according to claim 15 or 16.

18. The first flow path, the first insulating layer, the second flow path, and the second insulating layer are formed inside the base which is integrally formed. The mounting table according to any one of claims 15 to 17.

19. At least one of the first flow path, the first insulating layer, the second flow path, and the second insulating layer has a fin structure or a lattice structure. The mounting table according to any one of claims 15 to 18.

20. The second temperature is higher than the first temperature. The mounting table according to any one of claims 12 to 19.

21. A first seal member is disposed between a bottom surface of the base and an upper surface of a holding member supporting the base. The mounting table according to any one of claims 12 to 20.

22. A second seal member is disposed between the bottom surface of the base and a joint portion of a gas supply line for a heat transfer gas. The mounting table according to claim 21 .

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