Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a method, for processing a substrate at a desired processing rate by controlling a heating part to a desired temperature.SOLUTION: A substrate processing apparatus 1 includes: a rotational body 10 that rotates a substrate W; a first supply part 30 that supplies a processing liquid to a processed surface wa of the substrate W from a nozzle 30a; a heating part 50 that heats the processing liquid supplied to the processed surface wa of the substrate W; a temperature measurement part 60 that measures a temperature of the processing liquid supplied to the processed surface wa from a back surface Wb on the side opposite to the processed surface wa of the substrate W; a cover 70 that includes a transparent part Ta that is provided between the temperature measurement part 60 and the substrate W, and can transmissivity measure a temperature of the processing liquid by the temperature measurement part 60; a heating control part 130 that controls the heating part 50 on the basis of the temperature measured by the temperature measurement part 60; a second supply part 40 that supplies a cleaning liquid from a nozzle 40b onto the back surface Wb on the side opposite from the processed surface wa of the substrate W to be rotated; and a removing part 90 that removes droplets from the processing liquid in the transparent part Ta or the cleaning liquid by blowing out gases.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] As a wet etching apparatus for etching a film laminated on a substrate such as a semiconductor wafer using a processing liquid, there is a batch-type substrate processing apparatus in which multiple substrates are immersed in the processing liquid at once. Such a batch-type substrate processing apparatus has high productivity because it can process multiple substrates at once.

[0003] However, in a batch-type substrate processing apparatus, multiple substrates are immersed in a processing solution with common conditions, and it is difficult to finely adjust the etching depth, etc. for each substrate according to differences in the film thickness, etc. formed on each substrate. Therefore, a single-wafer type substrate processing apparatus is used in which a processing solution for etching is supplied near the center of rotation of a substrate while the substrate is rotated, and the processing solution is spread over the processing surface of the substrate, thereby processing substrates one by one.

[0004] As the processing liquid for etching, an acid liquid such as hydrofluoric acid, phosphoric acid, or sulfuric acid is used. For example, when etching a nitride film on a substrate having an oxide film and a nitride film stacked thereon, there is a substrate processing apparatus that uses an aqueous solution of phosphoric acid (phosphoric acid solution) as the processing liquid. The higher the temperature of the phosphoric acid solution, the higher the etching rate, and when the temperature of the phosphoric acid solution drops, the etching rate drops. Therefore, in order to obtain a desired etching rate, the phosphoric acid solution must be maintained at a high temperature. For example, the phosphoric acid solution is heated to 150°C to 160°C and supplied to the substrate to etch the nitride film.

[0005] However, substrates such as silicon wafers have high thermal conductivity. As a result, the phosphoric acid solution supplied to the surface of the substrate to be treated loses heat through the substrate, and the temperature is likely to drop. In other words, the phosphoric acid solution supplied near the center of rotation is maintained at a high temperature, but as it moves toward the outer periphery of the substrate, the temperature of the phosphoric acid solution drops due to heat dissipation.

[0006] If the temperature of the phosphoric acid solution differs depending on the position on the substrate surface to be treated in this way, the etching rate will differ depending on the position on the substrate, making it difficult to uniformly treat the entire substrate. To address this, there is a substrate treatment apparatus that performs etching treatment while maintaining the temperature of the phosphoric acid solution on the substrate surface to be treated.

[0007] In such a substrate processing apparatus, a heating unit is provided facing the substrate, and the phosphoric acid solution supplied to the vicinity of the center of the substrate flows over the substrate surface to be processed while being heated by the heating unit, thereby making it possible to maintain the etching rate of the phosphoric acid solution. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2014-209600 A Summary of the Invention [Problem to be solved by the invention]

[0009] As described above, in a substrate processing apparatus using a heating unit, it is necessary to maintain the temperature of the processing liquid during processing at a desired temperature in order to obtain a desired etching rate. Therefore, it is conceivable to measure the temperature of the processing liquid and control the temperature of the heating unit in accordance with the measured temperature to maintain the temperature of the processing liquid.

[0010] As a thermometer for measuring the temperature of the processing liquid, for example, there is a radiation thermometer that uses infrared rays to measure the temperature without contact. However, when measuring from the processing surface side of the substrate during processing, there is a risk that the measurement accuracy of the thermometer will decrease due to the influence of steam generated above the substrate as the processing liquid is heated. In other words, the steam becomes a disturbance and the desired temperature control cannot be performed. To address this, a substrate processing apparatus has been proposed that is provided with a thermometer that measures the temperature of the substrate from the back side of the substrate, which is less susceptible to the influence of steam.

[0011] Here, after the processing with the processing liquid, it is necessary to wash away the processing liquid and the etched object remaining on the processing surface of the substrate and the back surface opposite to the processing surface. Therefore, after the processing with the processing liquid, a cleaning liquid is supplied to the processing surface and back surface of the substrate to clean the substrate. Then, after cleaning with the cleaning liquid, liquid droplets remain near the thermometer provided on the back surface side of the substrate. If liquid droplets remain near the thermometer, the measurement accuracy of the thermometer decreases, so that the measured temperature becomes inaccurate or the temperature cannot be measured when processing the next substrate carried in. That is, in this case, the processing liquid or cleaning liquid remaining in the thermometer as liquid droplets becomes a disturbance, and there are cases where the heating unit cannot be controlled to the desired temperature or the substrate cannot be processed at the desired processing rate.

[0012] An embodiment of the present invention has been proposed to solve the above-mentioned problems, and its object is to provide a substrate processing apparatus and a substrate processing method that can control a heating section to a desired temperature and process substrates at a desired processing rate. [Means for solving the problem]

[0013] A substrate processing apparatus according to an embodiment of the present invention includes a rotating body that rotates a substrate held by a holding unit, a first supply unit that supplies a processing liquid to a processing surface of the rotating substrate, a heating unit that heats the processing liquid supplied to the processing surface of the substrate, a temperature measurement unit that measures the temperature of the processing liquid supplied to the processing surface from the side of the substrate opposite the processing surface, a transmission unit that can transparently measure the temperature of the processing liquid by the temperature measurement unit and is provided between the temperature measurement unit and the substrate, a heating control unit that controls the heating unit based on the temperature measured by the temperature measurement unit, a second supply unit that supplies a cleaning liquid to the side of the rotating substrate opposite the processing surface, and a removal unit that removes droplets of the processing liquid or the cleaning liquid in at least the transmission unit.

[0014] In the substrate processing method of the present embodiment, a rotating body rotates the substrate held by a holding unit, a first supply unit supplies a processing liquid to the processing surface of the rotating substrate, a heating unit heats the processing liquid supplied to the processing surface of the substrate, a temperature measurement unit measures the temperature of the processing liquid supplied to the processing surface from the side of the substrate opposite the processing surface through a cover having a transparent portion capable of transparently measuring the temperature of the processing liquid, a heating control unit controls the heating unit based on the temperature measured by the temperature measurement unit, a second supply unit supplies a cleaning liquid to the side of the rotating substrate opposite the processing surface, and a removal unit removes droplets of the processing liquid or the cleaning liquid at least in the transparent portion. Effect of the Invention

[0015] An embodiment of the present invention can control the heating section to a desired temperature to process substrates at a desired processing rate. [Brief description of the drawings]

[0016] [Figure 1] 1 is an overall configuration diagram showing a state in which a plate of a substrate processing apparatus according to an embodiment is in a standby position; [Diagram 2] 2 is an overall configuration diagram showing a substrate processing state of the substrate processing apparatus of FIG. 1. [Diagram 3]2 is an overall configuration diagram showing a substrate cleaning state of the substrate processing apparatus of FIG. 1. [Figure 4] 2 is an overall configuration diagram showing a droplet detection state of the substrate processing apparatus of FIG. 1. FIG. [Diagram 5] 2 is an overall configuration diagram showing a droplet removal state of the substrate processing apparatus of FIG. 1. FIG. [Figure 6] 10 is a plan view showing an example of a droplet on a masking surface detected by a detection unit; FIG. [Figure 7] 4 is a flowchart showing a processing procedure of the substrate processing apparatus according to the embodiment. [Figure 8] 13 is an explanatory diagram showing a modified example in which a removal unit has a plurality of nozzles. FIG. [Figure 9] FIG. 13 is an explanatory diagram showing a modified example in which a heating device is used as the removal unit. [Figure 10] 13 is an explanatory diagram showing a modified example in which a wiping unit is used instead of a removing unit. FIG.

[0017] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. [overview] 1 and 2, the substrate processing apparatus 1 of this embodiment supplies one surface (hereinafter referred to as the surface to be processed wa) of the substrate W with a processing liquid Le heated in a first supply unit 30 while rotating the substrate W together with a rotor 10, thereby processing the surface to be processed wa. At this time, as shown in Fig. 2, the heating unit 50 is brought close to the surface to be processed wa of the substrate W to narrow the space between the heating unit 50 and the substrate W, thereby making it difficult for heat to escape and heating the processing liquid Le, thereby suppressing a drop in temperature. The heating unit 50 can be advanced and retreated relative to the substrate W without coming into contact with the substrate W by an advance / retract mechanism 53c.

[0018] Furthermore, as shown in FIG. 3, the substrate processing apparatus 1 cleans both sides of the substrate W by supplying a cleaning liquid Lw to the processing surface wa of the rotating substrate W and to the surface opposite to the processing surface wa (hereinafter referred to as the back surface wb) by the second supply section 40.

[0019] The substrate W processed in this embodiment is, for example, a silicon wafer on which a nitride film is formed, and the processing liquid Le for processing the substrate W is, for example, an aqueous solution containing phosphoric acid (H3PO4) for etching the nitride film (hereinafter, referred to as phosphoric acid solution). Also, pure water (DIW) is used as the cleaning liquid Lw for cleaning the substrate W. Preheated warm pure water may be used as the cleaning liquid Lw. The cleaning liquid Lw is not limited to pure water. For example, hydrofluoric acid (aqueous solution of hydrogen fluoride) may also be used.

[0020] [composition] As shown in Figures 1 to 4, the substrate processing apparatus 1 has a rotating body 10, a holding section 20, a first supply section 30, a second supply section 40, a heating section 50, a temperature measurement section 60, a cover 70, a detection section 80, a removal section 90, and a control section 100.

[0021] (rotating body) The rotating body 10 rotates the substrate W held by a holding part 20 described below. The rotating body 10 has a cylindrical shape with a diameter larger than that of the substrate W, and has a circular through-hole 10a formed in the vertical direction at its center. A vertical fixed cylinder 11 is inserted into the through-hole 10a without contact, and a vertical drainage pipe 12 is inserted into the fixed cylinder 11. A funnel-shaped (inverted cone-shaped, mortar-shaped) inclined surface is formed at the top of the drainage pipe 12, and its upper end is open.

[0022] A table 13 is provided on the upper part of the rotating body 10. The table 13 is a doughnut-shaped cylinder with its lower part open and attached to the rotating body 10. The upper part of the table 13 is an annular surface with an outer diameter larger than the diameter of the substrate W, and faces the substrate W held by the holder 20 with a gap therebetween.

[0023] A space is provided in the center of the table 13 to accommodate a temperature measuring unit 60 and a cover 70, which will be described later. A protective wall 10b is provided on the upper surface of the rotor 10 in this space to prevent the intrusion of the treatment liquid Le. The protective wall 10b is a cylindrical wall that is concentric with the rotor 10 and stands up from the upper surface of the rotor 10.

[0024] The rotating body 10 and the table 13 are formed of a material that is resistant to the processing liquid Le. For example, the rotating body 10 and the table 13 are preferably made of a fluorine-based resin such as PTFE (Polytetrafluoroethylene) or PCTFE (Polychlorotrifluoroethylene). Although not shown, the rotating body 10 is provided on a fixed base fixed to an installation surface or a stand installed on the installation surface so as to be rotatable by a rotation mechanism 15 described later.

[0025] The rotation mechanism 15 has a driving source 15a. The driving source 15a is a hollow motor fixed to a fixed base and having a hollow rotor and a stator that rotates the rotor. The driving source 15a rotates the rotor and the rotor 10 by passing electricity through the coil of the stator. However, the fixed cylinder 11 arranged in a non-contact manner in the through hole 10a of the rotor 10 is inserted into the driving source 15a and fixed to the fixed base, and does not rotate. Furthermore, the drainage pipe 12 inserted into the fixed cylinder 11 does not rotate either.

[0026] A collection unit 16 that covers the periphery of the rotor 10 in a non-contact manner is provided around the rotor 10. The collection unit 16 is a cylindrical body that is bent so that the diameter at the top is narrowed. A drainage port 16a for draining the processing liquid Le and the cleaning liquid Lw is provided at the bottom surface of the collection unit 16. The collection unit 16 is provided so as to be movable between a shielding position that covers the periphery of the holder 20 and a retracted position that retracts from the periphery of the holder 20 by a driving mechanism 16b such as a cylinder fixed to a fixed base.

[0027] The recovery unit 16 in the shielding position receives and recovers the processing liquid Le and cleaning liquid Lw scattered from the rotating substrate W from around the substrate W. The recovery unit 16 also receives and recovers the processing liquid Le and cleaning liquid Lw removed from the cover unit 70 (described later) by the removal unit 90 (described later). The processing liquid Le and cleaning liquid Lw received by the recovery unit 16 are discharged to a recovery path (not shown) via the drainage port 16a.

[0028] (holding part) 2, the holding unit 20 holds the substrate W parallel to and spaced from the table 13. The holding unit 20 has a holding pin 21. The holding pin 21 is rotated eccentrically about an axis parallel to the axis of rotation of the rotating body 10 by a drive mechanism (not shown) built into the rotating body 10, thereby moving between a holding position where the holding pin 21 comes into contact with the edge of the substrate W to hold the substrate W, and a release position where the holding pin 21 moves away from the edge of the substrate W to release the substrate W.

[0029] (First supply unit) 2, the first supply unit 30 supplies the processing liquid Le to a processing surface wa of the substrate W, that is, a surface of the substrate W held by the holder 20 opposite to a surface facing the table 13. The first supply unit 30 supplies a phosphoric acid solution as the processing liquid Le. The first supply unit 30 has a liquid tank 31 that stores the processing liquid Le.

[0030] The liquid tank 31 is connected to a supply pipe 32. The tip of the supply pipe 32 is a nozzle 30a facing the substrate W held by the holder 20. As a result, the processing liquid Le from the liquid tank 31 is supplied to the processing surface wa of the substrate W through the supply pipe 32 and the nozzle 30a.

[0031] The supply pipe 32 is provided with a valve 33 and a flowmeter 34. The valve 33 has a flow rate adjustment function and an ON / OFF function. The valve 33 adjusts the flow rate of the processing liquid Le flowing from the liquid tank 31 into the supply pipe 32. The flow rate of the processing liquid Le flowing through the supply pipe 32 is detected by the flowmeter 34. Note that the generating equipment and generating method of the processing liquid Le stored in the liquid tank 31 are not limited to a specific one.

[0032] (Second Supply Section) 3, the second supply unit 40 supplies the cleaning liquid Lw to the back surface wb opposite to the processing surface wa of the substrate W. The second supply unit 40 also supplies the cleaning liquid Lw to the processing surface wa of the substrate W. The second supply unit 40 supplies pure water as the cleaning liquid Lw. The second supply unit 40 has a liquid tank 41 that stores the cleaning liquid Lw.

[0033] The liquid tank 41 is connected to a supply pipe 42. The tip of the supply pipe 42 is a nozzle 40a facing the substrate W held by the holder 20. As a result, the cleaning liquid Lw from the liquid tank 41 is supplied to the processing surface wa of the substrate W through the supply pipe 42. A supply pipe 43 branches off from the supply pipe 42. The supply pipe 43 is inserted from the lower part of the fixed cylinder 11 and extends to the inclined surface at the upper part of the drain pipe 12, and the tip of the supply pipe 43 is a nozzle 40b that passes through a hole formed in the inclined surface and faces the vicinity of the center of the back surface wb of the substrate W. Note that a plurality of nozzles 40b may be provided along the circumferential direction of the inclined surface of the supply pipe 43, and the cleaning liquid Lw may be supplied from a plurality of locations toward the vicinity of the center of the back surface wb.

[0034] The supply pipe 42 is provided with a valve 44 and a flowmeter 45. The valve 44 has a flow rate adjustment function and an ON / OFF function. The valve 44 adjusts the flow rate of the cleaning liquid Lw supplied from the liquid tank 41 to the processing surface wa of the substrate W through the supply pipe 42. In addition, a valve 46 and a flowmeter 47 are provided on the supply pipe 43 branched from the supply pipe 42. The valve 46 has a flow rate adjustment function and an ON / OFF function. The valve 46 adjusts the discharge flow rate of the cleaning liquid Lw supplied to the back surface wb of the substrate W. The flow rate of the cleaning liquid Lw flowing through the supply pipes 42 and 43 is detected by the corresponding flowmeters 45 and 47. The equipment and method for generating the cleaning liquid Lw stored in the liquid tank 41 are not limited to a specific one.

[0035] (heating part) 2, the heating unit 50 heats the processing liquid Le supplied to the processing surface wa of the substrate W. The heating unit 50 has a plate 51, a heating source 52, and a driving unit 53. The plate 51 is provided at a position facing the processing surface wa of the substrate W, and is a member movable in a direction toward and away from the substrate W. The plate 51 is concentric with the center of rotation of the substrate W, and has a disk shape with a diameter larger than that of the substrate W. In other words, the plate 51 is sized to cover the entire processing surface wa of the substrate W without contacting it. The plate 51 is made of quartz. A flange 51a with an outwardly expanding diameter is formed on the upper peripheral edge of the plate 51.

[0036] The plate 51 may have a double structure to achieve both heat resistance and liquid resistance. That is, the base may be formed of a heat-resistant material, and the periphery may be covered with a material that is resistant to the treatment liquid Le. For example, the plate 51 may be formed by forming a cover of a fluorine-based resin such as PTFE or PCTFE around the base made of quartz.

[0037] Nozzles 30a, 40a at the tips of two supply pipes 32, 42 are inserted into plate 51, and their respective outlets are exposed on the side of substrate W. The two nozzles 30a, 40a are offset from the axis of rotation of rotor 10. This is because, as substrate W rotates, the portions of substrate W facing the outlets of nozzles 30a, 40a change successively, thereby contributing to uniforming the temperature of processing liquid Le.

[0038] The heating source 52 is an LED that emits light and generates heat when energized. A plurality of heating sources 52 are provided concentrically at different positions in the horizontal direction of the plate 51. For example, a plurality of sets of LEDs are arranged concentrically so as to be divided into four annular rings with different diameters. With such a heating source 52, the heat generation amount (light amount) is controlled for each of the four annular rings arranged concentrically, thereby changing the temperature for each concentric portion, and changing the temperature distribution of the processing liquid Le. Note that the outer diameter of the outermost periphery of the heating source 52 is preferably a size that covers the substrate W, that is, a diameter equal to or larger than the diameter of the substrate W, in order to suppress a temperature drop on the outer periphery side of the substrate W. Note that, "heating the processing liquid Le supplied to the processing surface wa of the substrate W" includes a mode in which the substrate W is heated and the processing liquid Le is indirectly heated via the substrate W.

[0039] The driving unit 53 is a mechanism for moving the plate 51 forward and backward relative to the substrate W. The driving unit 53 has a support unit 53a, an arm 53b, and an advance / retract mechanism 53c. The support unit 53a is a ring-shaped member into which the plate 51 is inserted and which supports the plate 51 horizontally by abutting the flange 51a on the upper portion. The arm 53b is a member extending horizontally and one end of which is fixed to the support unit 53a.

[0040] The advancing / retreating mechanism 53c is a mechanism that is erected on a stand and that moves the plate 51 via the arm 53b in a direction toward and away from the substrate W. The advancing / retreating mechanism 53c of this embodiment has a movable part that moves in a direction parallel to the axis of rotation of the rotating body 10, and the other end of the arm 53b is attached to the movable part. The advancing / retreating mechanism 53c can be implemented by various mechanisms that move the movable part, such as a cylinder or a ball screw mechanism, but details will be omitted.

[0041] The advance / retract mechanism 53c moves the plate 51 to a standby position, a processing position, and a cleaning position. As shown in FIG. 1, the standby position is a position where the gap between the plate 51 and the rotor 10 allows the substrate W to be loaded and unloaded. As shown in FIG. 2, the processing position is a position where the processing liquid Le is circulated between the plate 51 and the processing surface wa, and the processing surface wa is processed while being heated by the heating source 52. In this embodiment, the plate 51 is lowered to a position where a gap is formed between the plate 51 and the processing surface of the substrate W. This gap is, for example, 4 mm or less, but is preferably maintained so that a gap of about 2 mm is provided between the plate 51 and the processing liquid Le.

[0042] The processing liquid Le is heated to a preset temperature by a heating device (not shown) in the first supply unit 30, and is then supplied to the substrate W and heated by the heating unit 50. This allows the processing liquid Le supplied to the substrate W to be spread over the entire surface of the substrate W while maintaining the preset temperature. In particular, by setting the heating source 52 on the outer periphery to a high temperature, the temperature of the outer periphery of the substrate W, which is prone to temperature drop, is increased, and uniformity in the temperature of the processing liquid Le on the processing surface Wa of the substrate W is obtained.

[0043] As shown in FIG. 3, the cleaning position is a position where the cleaning liquid Lw is circulated between the plate 51 and the treatment surface wa to clean the treatment surface wa.

[0044] It is not necessary that the cleaning position, the processing position, and the standby position are all different. For example, the cleaning position and the standby position are not necessarily different. When the cleaning liquid Lw is supplied to the substrate W, the position of the plate 51 may be in the standby position, and when the substrate W is carried in and out, the position of the plate 51 may be in the cleaning position. In other words, the two positions do not have to be clearly distinguished, and the substrate W may be carried in and out and the cleaning liquid Lw may be supplied at the same position. Also, for example, the cleaning position and the processing position are not necessarily different. When the cleaning liquid Le is supplied to the substrate W, the position of the plate 51 may be in the processing position. In this case, the cleaning liquid Lw is placed at a position where it can adhere to the plate 51, so that the processing liquid Le on the processing surface wa of the substrate W is washed away, and the processing liquid Le that adheres to the plate 51 during processing can be washed away by the cleaning liquid Lw.

[0045] (Temperature measurement part) As shown in FIG. 2, the temperature measuring unit 60 measures the temperature of the processing liquid Le supplied to the processing surface wa of the substrate W by measuring infrared rays that are transmitted through the substrate W and radiated from the back surface wb of the substrate W opposite to the processing surface wa. The temperature measuring unit 60 is a radiation thermometer that measures the temperature from the amount of infrared rays radiated from the measurement target. The temperature measuring unit 60 is accommodated in the central space of the table 13 such that an axis indicating the direction toward the measurement point faces the back surface wb of the substrate W. A plurality of temperature measuring units 60 are provided so that the temperature of a plurality of points in the radial direction of the substrate W can be measured. In this embodiment, four temperature measuring units 60 are provided corresponding to the four annular sets of the heating source 52.

[0046] The temperature measuring unit 60 does not need to be disposed directly below the measurement location, and may be disposed at an angle toward the measurement location. The temperature of the processing liquid Le decreases more easily as it is supplied away from the center of the substrate W, and therefore it is highly necessary to measure and monitor the temperature. However, due to the need to dispose the holder 20, the diameter of the space in which the temperature measuring unit 60 can be disposed is smaller than the diameter of the substrate W. For this reason, the multiple temperature measuring units 60 may include one whose axis indicating the direction toward the measurement location is inclined.

[0047] (cover) As shown in FIG. 2, the cover 70 is provided between the temperature measuring unit 60 and the substrate W, and has a transmitting portion Ta through which the temperature measuring unit 60 can measure the temperature of the processing liquid Le through the transmitting portion Ta. Note that being able to measure through the transmitting portion Ta means that the temperature measuring unit 60 can measure the temperature of the processing liquid Le by converting infrared rays emitted from the measurement target and transmitted through the transmitting portion Ta into temperature. The cover 70 is a cylindrical member whose upper end is covered with a horizontal shielding surface 71 and whose lower end is open (see FIG. 6). The cover 70 is formed of a material that is resistant to the processing liquid Le. For example, the cover 70 is preferably made of a fluorine-based resin such as PTFE or PCTFE. The cover 70 prevents the processing liquid Le from adhering to the temperature measuring unit 60.

[0048] The cover 70 is not in contact with the rotor 10 and the table 13, and is supported and fixed to the fixed cylinder 11, so that the cover 70 does not rotate even when the rotor 10 rotates. The cover 70 is provided so as to cover the outer periphery of the protective wall 10b, so that a labyrinth structure, which is a curved path, is formed between the side surface of the cover 70 and the protective wall 10b, and the processing liquid Le and the cleaning liquid Lw that flow down along the outer wall of the cover 70 are unlikely to flow into the inside of the cover 70.

[0049] The transmission part Ta is provided on the shielding surface 71. A plurality of transmission parts Ta are provided corresponding to the plurality of temperature measuring parts 60 housed in the cover 70. For example, the transmission part Ta can be a window in which quartz capable of transmitting infrared rays is fitted into a through hole formed in the shielding surface 71. In this embodiment, four transmission parts Ta are provided. The transmission parts Ta are formed at positions where the extension lines of the axes indicating the directions toward the measurement points of the plurality of temperature measuring parts 60 intersect. Therefore, the arrangement position of the transmission part Ta is not limited to directly below the measurement point or directly above the temperature measuring part 60.

[0050] Further, a drainage port 72, which is a through hole to which the upper end of the drainage pipe 12 is connected, is formed in the center of the shielding surface 71 of the cover 70. A part of the processing liquid La and the cleaning liquid Lw dropped from the substrate W flows into the drainage pipe 12 through the drainage port 72 and is discharged into a drainage flow path connected to the drainage pipe 12.

[0051] (Detection unit) As shown in FIG. 4, the detection unit 80 detects droplets Dr of the processing liquid Le or cleaning liquid Lw in the transmission unit Ta. That is, after the processing and cleaning of the substrate W, the detection unit 80 detects the droplets Dr remaining on the shielding surface 71 of the cover 70. The detection unit 80 has an imaging unit 81 and a moving mechanism 82. As shown in FIG. 6, the imaging unit 81 captures an image of the entire shielding surface 71 of the cover 70. For example, an IR camera or a CCD camera can be used as the imaging unit 81. The captured image is binarized, for example, so that the area of ​​the droplets Dr becomes white, and therefore the presence or absence of the droplets Dr can be detected. The detection unit 80 detects the droplets Dr when the holder 20 is not holding the substrate W. That is, the imaging unit 81 captures an image of the shielding surface 71 of the cover 70 when the holder 20 is not holding the substrate W. The detection unit 80 only needs to detect the droplets Dr at least in the measurement range of the temperature measurement unit 60 in the transmission unit Ta.

[0052] The moving mechanism 82 has an arm that swings due to a drive source not shown, and moves the imaging unit 81 provided at the tip of the arm between an imaging position located above the cover 70 and a retracted position where it is retracted from above the cover 70.

[0053] (Removal part) 5, the removal unit 90 removes droplets Dr from the processing liquid Le or cleaning liquid Lw on the shielding surface 71. The removal unit 90 has a blowing unit 91 and a moving mechanism 92. The blowing unit 91 removes the droplets Dr by blowing gas. The blowing unit 91 has a pipe 91a connected to an air supply device (not shown), and the tip of the pipe 91a is a nozzle 91b directed toward the shielding surface 71 of the cover 70. The gas blown out by the blowing unit 91 is N2 gas, clean air, or the like. It is sufficient for the removal unit 90 to be able to remove droplets Dr at least in the transmission unit Ta.

[0054] The remover 90 removes the liquid droplets Dr when the holder 20 is not holding the substrate W. That is, the blower 91 blows gas onto the shielding surface 71 when the holder 20 is not holding the substrate W.

[0055] The movement mechanism 92 has an arm that swings due to a drive source (not shown), and moves a nozzle 91b provided at the tip of the arm between a blowing position where the nozzle 91b blows gas downward from above the cover 70 and a retracted position where the nozzle 91b retracts from above the cover 70. In addition, the movement mechanism 92 swings the nozzle 91b blowing gas, thereby changing the blowing position and blowing away the droplets Dr.

[0056] (Control unit) The control unit 100 controls each unit of the substrate processing apparatus 1. The control unit 100 has a processor that executes a program to realize various functions of the substrate processing apparatus 1, a memory that stores various information such as the program and operating conditions, and a drive circuit that drives each element. That is, the control unit 100 has a mechanism control unit 110 that controls the driving of the rotation mechanism 15, the recovery unit 16, the holding unit 20, etc.

[0057] Moreover, the control unit 100 of this embodiment has a supply control unit 120, a heating control unit 130, a detection control unit 140, a determination unit 150, and a removal control unit 160. The supply control unit 120 controls the supply of the processing liquid Le and the cleaning liquid Lw by controlling the valves 33, 44, 46, etc. of the first supply unit 30 and the second supply unit 40. That is, when the flow rates detected by the flow meters 34, 45, 47 exceed or decrease to predetermined values, the supply control unit 120 controls the valves 33, 44, 46 so that the flow rates become the predetermined values.

[0058] The heating control unit 130 controls the temperature of the heating unit 50 based on the temperature of the processing liquid Le measured by the temperature measuring unit 60. That is, the heating control unit 130 performs feedback control to control the output of the heating source 52 according to the measured temperature of the processing liquid Le. For example, when the average value of the temperatures of the processing liquid Le measured by the plurality of temperature measuring units 60 is lower than a predetermined temperature, the heating control unit 130 increases the temperature of the heating source 52. Also, when the temperature of the processing liquid Le measured by each temperature measuring unit 60 is lower than a predetermined temperature, the heating control unit 130 increases the temperature of the heating source 52 corresponding to the temperature measuring unit 60. In this case, for example, a set of the heating sources 52 arranged opposite to the points where the temperatures are detected by each temperature measuring unit 60 corresponds to each temperature measuring unit 60. The heating control unit 130 controls the driving unit 53 to move the plate 51 in a direction toward or away from the substrate W.

[0059] The detection control unit 140 controls the driving of the detection unit 80. That is, the detection control unit 140 controls the imaging of the imaging unit 81 and the driving of the moving mechanism 82. The determination unit 150 determines whether or not the temperature can be measured by the temperature measurement unit 60 via the transmission part Ta, based on the droplets Dr detected by the detection unit 80. For example, in the image captured by the imaging unit 81, if the ratio of the area of ​​the droplets Dr covering the transmission part Ta to the area of ​​the transmission part Ta exceeds a threshold value, or if the ratio of the area not covered by the transmission part Ta is equal to or less than a threshold value, the determination unit 150 determines that the temperature cannot be measured. If the ratio of the area of ​​the droplets Dr covering the transmission part Ta to the area of ​​the transmission part Ta is equal to or less than a threshold value, or if the ratio of the area not covered by the transmission part Ta exceeds a threshold value, the determination unit 150 determines that the temperature can be measured.

[0060] The removal control unit 160 controls the driving of the removal unit 90. That is, the removal control unit 160 controls the movement of the nozzle 91b by the movement mechanism 92, the oscillation of the nozzle 91b, and the blowing of gas from the nozzle 91b by the air supply device. The removal control unit 160 of this embodiment causes the removal unit 90 to remove the droplets Dr when the determination unit 150 determines that temperature measurement is not possible.

[0061] [Operation] The operation of the substrate processing apparatus 1 of this embodiment as described above will be described with reference to the flowchart of Fig. 7 in addition to Figs. 1 to 6. Note that a substrate processing method and a substrate manufacturing method for processing a substrate W according to the following procedure are also aspects of this embodiment.

[0062] 1, the plate 51 is in an upper standby position. In this state, a puddle of pure water has been placed on the surface to be processed in the previous step, and the substrate W mounted on the hand of the transport robot is carried above the rotating body 10, and its periphery is supported by a plurality of holding pins 21, so that it is held on the table 13 of the rotating body 10 (step S01). At this time, the substrate W is positioned so that its center coincides with the axis of rotation of the rotating body 10.

[0063] The rotor 10 rotates at a relatively slow predetermined speed (e.g., about 50 rpm). This causes the substrate W to rotate together with the holder 20 at the predetermined speed (step S02). At the same time, the recovery unit 16 rises and moves to the shielding position. Then, as shown in FIG. 2, the plate 51 descends to a processing position where a predetermined gap (e.g., 4 mm or less) is formed between the plate 51 and the processing surface wa of the substrate W (step S03).

[0064] The first supply unit 30 supplies the processing liquid Le to the processing surface wa of the substrate W, and the temperature measurement unit 60 starts measuring the temperature of the processing liquid Le and the heating source 52 starts heating by energizing the heating source 52 (step S04). The heating source 52 heats the surface of the plate 51 facing the substrate W and maintains it at a predetermined temperature (for example, a temperature within a temperature range of 180°C to 225°C). For example, since the temperature of the outer peripheral region of the substrate W is the lowest due to heat dissipation, the heating source 52 of the outer peripheral region may be heated to a higher temperature than other regions. While the processing liquid Le is being supplied, the temperature is constantly measured. As described above, the processing liquid Le is heated in advance by the heating device of the first supply unit 30. The processing liquid Le moves sequentially toward the outer periphery of the rotating substrate W, and the pure water on the processing surface wa of the substrate W is replaced by the phosphoric acid solution of the processing liquid Le, and the nitride film is removed by etching.

[0065] The processing liquid Le supplied near the center of the substrate W is more likely to lose heat as it moves toward the outer periphery of the substrate W, but in this embodiment, the plate 51 is close to the substrate W, so the processing liquid Le is heated by the heat source 52, and a decrease in the processing rate due to a drop in temperature is suppressed. For example, the temperature of the phosphoric acid solution, which is the processing liquid Le, is preferably maintained at about 150 to 160°C.

[0066] The temperature of the processing liquid Le during processing is measured by the temperature measuring unit 60 as described above. The heating control unit 130 controls the temperature of the heat source 52 according to the measured temperature of the processing liquid Le. That is, when the average value of the temperature of the processing liquid Le measured by the temperature measuring unit 60 is lower than a predetermined temperature, the temperatures of all the heat sources 52 are increased. Alternatively, when the temperature of the processing liquid Le measured by each temperature measuring unit 60 is lower than a predetermined temperature, the temperature of the heat source 52 corresponding to that temperature measuring unit 60 is increased.

[0067] When a predetermined processing time has elapsed (YES in step S05), the first supply unit 30 stops supplying the processing liquid Le, and the temperature measurement unit 60 stops measuring the temperature (step S06). Next, as shown in FIG. 3, the plate 51 is raised to a cleaning position above the processing position (step S07).

[0068] Then, the second supply unit 40 supplies the cleaning liquid Lw to the processing surface wa and the back surface wb of the substrate W (step S08). When the cleaning liquid Lw is supplied to the processing surface wa of the rotating substrate W, the cleaning liquid Lw moves sequentially toward the outer periphery of the substrate W, thereby washing away the processing liquid Le on the processing surface wa of the substrate W. Also, when the cleaning liquid Lw is supplied to the back surface wb of the rotating substrate W, the cleaning liquid Lw moves sequentially toward the outer periphery of the substrate W, thereby preventing the processing liquid Le supplied to the processing surface wa of the substrate W from flowing around to the back surface wb. When a predetermined cleaning time has elapsed (YES in step S09), the second supply unit 40 stops supplying the cleaning liquid Lw (step S10).

[0069] The plate 51 moves to a standby position (step S11), the rotor 10 stops, the substrate W stops rotating, and the recovery unit 16 descends to the retreat position (step S12). The hand of the transport robot is inserted under the substrate W, the substrate W is released from the holder 20, and the substrate W is removed by the hand of the transport robot (step S13).

[0070] Next, the detection unit 80 detects the droplets Dr, and the removal unit 90 removes the droplets Dr. That is, as shown in Fig. 4, the movement mechanism 82 moves the imaging unit 81 to an imaging position (step S14), and after the imaging unit 81 captures an image of the shielding surface 71 of the cover 70 (step S15), the movement mechanism 82 moves the imaging unit 81 to a retracted position (step S16).

[0071] The determination unit 150 determines whether the droplets Dr allow the temperature measurement unit 60 to measure the temperature through the transmission unit Ta based on the image captured by the imaging unit 81 (step S17). If the determination unit 150 determines that the temperature can be measured (YES in step S18), and if there is a substrate W to be processed next (YES in step S24), the process proceeds to loading the substrate W (step S01). If there is no substrate W to be processed next (NO in step S24), the process ends.

[0072] If the determination unit 150 determines that the temperature cannot be measured (NO in step S18), the recovery unit 16 rises to the shielding position (step S19). The movement mechanism 92 of the removal unit 90 moves the nozzle 91b to the blowing position (step S20). As shown in FIG. 5, the nozzle 91b removes the droplets Dr by blowing gas toward the shielding surface 71 of the cover 70 while swinging (step S21). The movement mechanism 92 moves the nozzle 91b to the retracted position (step S22). The recovery unit 16 descends to the retracted position (step S23).

[0073] Furthermore, if there is a substrate W to be processed next (YES in step S24), the process proceeds to loading of the substrate W (step S01). If there is no substrate W to be processed next (NO in step S24), the process ends.

[0074] [effect] (1) The substrate processing apparatus 1 of this embodiment as described above includes a rotating body 10 that rotates the substrate W held by the holding unit 20, a first supply unit 30 that supplies a processing liquid Le to the processing surface wa of the rotating substrate W, a heating unit 50 that heats the processing liquid Le supplied to the processing surface wa of the substrate W, a temperature measurement unit 60 that measures the temperature of the processing liquid Le supplied to the processing surface wa from the side of the substrate W opposite to the processing surface wa, a cover 70 that is provided between the temperature measurement unit 60 and the substrate W and has a transmission unit Ta that allows the temperature of the processing liquid Le to be measured transparently by the temperature measurement unit 60, a heating control unit 130 that controls the heating unit 50 based on the temperature measured by the temperature measurement unit 60, a second supply unit 40 that supplies a cleaning liquid Lw to the side of the rotating substrate W opposite to the processing surface wa, and a removal unit 90 that removes droplets Dr of the processing liquid Le or the cleaning liquid Lw at least in the transmission unit Ta.

[0075] In the substrate processing method of this embodiment, the rotating body 10 rotates the substrate W held by the holding unit 20, the first supply unit 30 supplies the processing liquid Le to the processing surface wa of the rotating substrate W, the heating unit 50 heats the processing liquid Le supplied to the processing surface wa of the substrate W, the temperature measurement unit 60 measures the temperature of the processing liquid Le supplied to the processing surface wa of the substrate W from the side opposite the processing surface wa through a cover 70 having a transmission unit Ta capable of transparently measuring the temperature of the processing liquid Le, the heating control unit 130 controls the heating unit 50 based on the temperature measured by the temperature measurement unit 60, the second supply unit 40 supplies a cleaning liquid Lw to the side opposite the processing surface wa of the rotating substrate W, and the removal unit 90 removes droplets Dr of the processing liquid Le or the cleaning liquid Lw at least in the transmission unit Ta.

[0076] In this way, the droplets Dr adhering to the transmitting portion Ta of the cover 70 are removed after the substrate W is cleaned, so that the remaining droplets Dr are prevented from lowering the accuracy of temperature measurement by the temperature measurement unit 60 or from making it impossible to measure the temperature. Therefore, when processing the next substrate W, the heating unit 50 can be controlled to a desired temperature and processing can be performed at a desired processing rate.

[0077] (2) The remover 90 removes the droplets Dr when the holder 20 is not holding the substrate W. In this manner, by removing the droplets Dr after the processed substrate W is unloaded and before the substrate W to be processed next is loaded, adhesion of the droplets Dr to the substrate W to be processed next can be prevented.

[0078] (3) The device has a detection unit 80 for detecting droplets Dr at least in the transmission portion Ta. This makes it possible to determine the presence or absence of droplets Dr that may affect the temperature measurement.

[0079] (4) The apparatus includes a determination unit 150 that determines whether or not temperature measurement by the temperature measurement unit 60 via the transmission unit Ta is possible based on the droplets Dr detected by the detection unit 80, and a removal control unit 160 that causes the removal unit 90 to remove the droplets Dr when the determination unit 150 determines that temperature measurement is not possible. Therefore, the removal work can be performed only when removal of the droplets Dr is necessary, thereby improving processing efficiency.

[0080] (5) The detection unit 80 detects the droplets Dr in a state where the holder 20 is not holding the substrate W. This allows the droplets Dr to be detected accurately without the substrate W getting in the way.

[0081] (6) A plurality of temperature measuring units 60 are provided so as to be able to measure the temperature at a plurality of locations in the radial direction of the substrate W. Therefore, the heating unit 50 can be controlled in response to differences in the radial temperature distribution of the processing liquid Le on the processing surface wa of the substrate W, and the substrate W can be processed more accurately at a desired processing rate. As a result, the temperature is measured at a plurality of locations, and the transmission portion Ta also becomes wide, increasing the possibility of being blocked by the droplets Dr. However, accurate temperature measurement can be maintained by removing the droplets Dr using the removal unit 90.

[0082] (7) The remover 90 has a blower 91 that blows out gas to remove the droplets Dr. This allows the droplets Dr to be blown away in a short time. Furthermore, not only the droplets Dr but also particles and the like can be removed.

[0083] (8) The collection unit 16 receives the droplets Dr scattered from the cover 70 by covering the periphery of the holder 20 in a non-contact manner. This prevents the droplets Dr removed by the remover 90 from adhering to members outside the collection unit 16.

[0084] [Variations] The present embodiment is not limited to the above aspects. (1) After the removal of the droplets Dr by the removal unit 90, the detection of the droplets Dr by the detection unit 80 and the judgment by the judgment unit 150 are performed again. If it is determined that the temperature cannot be measured, the removal of the droplets Dr by the removal unit 90 may be performed again. The removal of the droplets Dr by the removal unit 90 may be performed without fail after cleaning without the detection of the droplets Dr by the detection unit 80. Note that, after that, if it is determined that the temperature cannot be measured after the detection of the droplets Dr by the detection unit 80 and the judgment by the judgment unit 150, the removal of the droplets Dr by the removal unit 90 may be performed again. Furthermore, without the judgment by the judgment unit 150, the droplets Dr detected by the detection unit 80 may be displayed on a display device connected to the control unit 100, and the operator may visually confirm and determine whether or not to perform removal by the removal unit 90.

[0085] (2) The blowing unit 91 of the removal unit 90 may have a plurality of nozzles 91b. For example, as shown in Fig. 8, by providing a plurality of nozzles 91b facing the shielding surface 71 and blowing gas onto the entire shielding surface 71, the droplets Dr can be removed more reliably.

[0086] (3) The removal unit 90 may be any mechanism capable of removing the droplets Dr. Therefore, the removal unit 90 is not limited to the mechanism that blows gas. The removal unit 90 may remove the droplets Dr by evaporating them by heating. For example, as shown in FIG. 9, the removal unit 90 may be configured to evaporate the droplets Dr by heating them using a heating device 93 that is moved to a position facing the shielding surface 71 by a moving mechanism 92. The heating device 93 may be oscillated during heating. For example, an LED, a halogen lamp, a heater, or the like may be used as the heating source of the heating device 93. The heating unit 50 may also be used as the removal unit 90 that is a heating device. In other words, the droplets Dr may be evaporated by the heating source 52 of the plate 51 that is brought close to the substrate W. This eliminates the need to provide a separate removal unit 90, simplifying the configuration and saving space.

[0087] 10, a wiping unit 94 having a length shorter than the diameter of the substrate W is provided so as to be horizontally movable by a moving mechanism, and the wiping unit 94 reciprocates while in contact with the shielding surface 71 so as not to interfere with the holding pins 21, thereby forming the removal unit 90 that wipes off the droplets Dr. The portion of the wiping unit 94 that comes into contact with the shielding surface 71 is preferably made of an elastic and flexible material.

[0088] (4) The transmission portions Ta provided in the cover 70 need only be provided so that all of the temperature measurement portions 60 can measure the temperature, and do not need to correspond to the number of the temperature measurement portions 60. In other words, the cover 70 may include transmission portions Ta of a size that allows a plurality of or all of the temperature measurement portions 60 to measure the temperature.

[0089] (5) The heating unit 50 may be one that heats the processing liquid Le with a heater, a halogen lamp, or the like. In this case, it is preferable to energize the heating source 52 in advance before the substrate W is loaded. The number of sets of heating sources 52 and the number of temperature measurement units 60 in the heating unit 50 are not limited to the above embodiment, and may be one, two, or four or more. In the above embodiment, a temperature measurement unit 60 is provided corresponding to each of the sets of heating sources 52, so that the area where the temperature is measured coincides with the area to be heated, but the number of heating sources 52 and the number of temperature measurement units 60 do not necessarily have to correspond to each other.

[0090] (6) In the process of the substrate processing apparatus 1, the process contents and the process liquid Le are not limited to those exemplified above, so long as the temperatures of the process liquid Le and the substrate W affect the process rate. The substrate W and the film to be processed are also not limited to those exemplified above.

[0091] [Other embodiments] Although the embodiment of the present invention and the modified examples of each part have been described above, these embodiments and the modified examples of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, modifications, and combinations can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims. [Explanation of symbols]

[0092] 1. Substrate Processing Equipment 10 Rotating Body 10a through hole 10b Protective wall 11 Fixed tube 12 Drain 13 Tables 15 Rotation mechanism 15a Driving source 16 Collection Department 16a Drainage port 16b Drive mechanism 20 Holding part 21 Retaining pin 30 First Supply Section 30a nozzle 31 Liquid tank 32 Supply pipe 33 Valve 34 Flow meter 40 Second Supply Section 40a nozzle 40b Nozzle 41 Liquid tank 42 Supply pipe 43 Supply pipe 44 Valve 45 Flow meter 46 Valve 47 Flow meter 50 Heating section 51 Plate 51a flange 52 Heating source 53 Drive unit 53a Support part 53b Arm 53c Advancement / retraction mechanism 60 Temperature measurement section 70 Cover 71 Shielding surface 72 Drainage port 80 Detection unit 81 Imaging unit 82 Moving mechanism 90 Removal part 91 Outlet 91a Piping 91b Nozzle 92 Moving mechanism 94 Wiping section 100 Control section 110 Mechanical control unit 120 Supply control section 130 Heating control section 140 Detection control section 150 Judgment section 160 Removal control section

Claims

1. a rotating body that rotates the substrate held by the holding part; a first supply unit that supplies a processing liquid to a processing surface of the rotating substrate; a heating unit that heats the processing liquid supplied to the processing surface of the substrate; a temperature measuring unit for measuring a temperature of the processing liquid supplied to the processing surface from a surface of the substrate opposite to the processing surface; a cover provided between the temperature measuring unit and the substrate, the cover having a transparent portion through which the temperature measuring unit can measure the temperature of the processing liquid transparently; A heating control unit that controls the heating unit based on the temperature measured by the temperature measurement unit; a second supply unit that supplies a cleaning liquid to a surface of the rotating substrate opposite to the surface to be processed; a removal unit that removes droplets of the processing liquid or the cleaning liquid in at least the transmission unit; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , wherein the remover removes the droplets while the holder is not holding the substrate.

3. The substrate processing apparatus according to claim 1 , further comprising a detection unit for detecting the droplets at least in the transmission unit.

4. a determination unit that determines whether or not the temperature can be measured by the temperature measurement unit through the transmission unit based on the droplet detected by the detection unit; a removal control unit that causes the removal unit to remove the droplets when the determination unit determines that the temperature cannot be measured; The substrate processing apparatus according to claim 3 , further comprising:

5. The substrate processing apparatus according to claim 3 , wherein the detection unit detects the droplets when the holder is not holding the substrate.

6. The substrate processing apparatus according to claim 1 , wherein the temperature measuring unit is provided in a plurality of units so as to be capable of measuring the temperature of a plurality of positions in a radial direction of the substrate.

7. The substrate processing apparatus according to claim 1 , wherein the removing section includes a blowing section that removes the droplets by blowing gas.

8. The substrate processing apparatus according to claim 1 , wherein the removal section includes a heating device that removes the droplets by heating.

9. 8. The substrate processing apparatus according to claim 7, further comprising a recovery section for receiving the droplets scattered from the cover by covering the periphery of the holder in a non-contact manner.

10. The rotating body rotates the substrate held by the holding part, a first supply unit supplies a processing liquid to a processing surface of the rotating substrate; a heating unit that heats the processing liquid supplied to the processing surface of the substrate; a temperature measuring unit measures the temperature of the treatment liquid supplied to the treatment surface from a surface of the substrate opposite to the treatment surface through a cover having a transparent portion capable of transparently measuring the temperature of the treatment liquid; a heating control unit that controls the heating unit based on the temperature measured by the temperature measurement unit; a second supply unit supplies a cleaning liquid to a surface of the rotating substrate opposite to the surface to be processed; A substrate processing method, comprising: a removal section removing droplets of at least the processing liquid or the cleaning liquid in the transmission section.

Images