Substrate support and plasma processing apparatus

Abstract

To provide a technology to suppress electrical discharges between a substrate mounting table and a substrate.SOLUTION: A disclosed substrate support has a base and an electrostatic chuck located on the base. The electrostatic chuck is a laminate that is located on a base, the laminate has a top surface and sides, and the laminate includes a first insulating layer, a second insulating layer, and an electrode layer disposed between the first and second insulating layers, and the electrode layer includes a laminate covered by one or both of the first and second insulating layers, a first coating layer covering the top and sides of the laminate, and a second coating layer covering the first coating layer and containing ceramic material.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] SUMMARY An exemplary embodiment of the present disclosure relates to a substrate mounting stage and a substrate processing apparatus. [Background technology]

[0002] A substrate (wafer) placed on a mounting table can be held by an electrostatic chuck. The electrostatic chuck electrostatically attracts the wafer to the mounting table by electrostatic force. The mounting device disclosed in Patent Document 1 includes a mounting body and an electrostatic chuck. An object to be processed is placed on the mounting body. The electrostatic chuck includes an insulating layer and an electrode layer embedded in the insulating layer. In the electrostatic chuck, a voltage is applied to the electrode layer to generate an electrostatic force between the electrode layer and the object to be processed, and the object to be processed is electrostatically attracted to the surface of the insulating layer. The electrostatic chuck layer, which is an insulating layer on the surface side of the electrode layer, is a yttrium oxide sprayed layer having a thickness of 200 to 280 μm formed by plasma spraying. The surface of the electrostatic chuck layer is formed to have a surface roughness that depends on the particle size of the sprayed yttrium oxide. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-117982 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for suppressing discharge between a substrate and a substrate supporting table. [Means for solving the problem]

[0005] In an exemplary embodiment, a substrate support is provided. The substrate support includes a base and an electrostatic chuck disposed on the base. The electrostatic chuck includes a stack disposed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, a first covering layer covering the top surface and the side surface of the stack, and a second covering layer covering the first covering layer and including a ceramic material. Effect of the Invention

[0006] According to one exemplary embodiment, a technique for suppressing discharge between a substrate mounting table and a substrate can be provided. [Brief description of the drawings]

[0007] [Figure 1] 1A and 1B are diagrams illustrating an example of a configuration of a substrate mounting table according to an illustrative embodiment; [Diagram 2] 2 is a diagram showing an example of a configuration of an end portion of the substrate mounting table shown in FIG. 1. [Diagram 3] 2 is a diagram showing an example of a configuration of a portion of the substrate mounting table shown in FIG. 1; [Figure 4] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Diagram 5] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 6] FIG. 6 is a diagram for explaining a method of forming the coating layer shown in each of FIGS. [Figure 7] 2 is a diagram showing an example of the configuration of a substrate processing apparatus provided with the substrate mounting stage shown in FIG. [Figure 8] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 9] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 10] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 11] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 12] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 13] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 14] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 15] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 16] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 17] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 18] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 19] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 20] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 21] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 22] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 23] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 24] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments will be described below. In the exemplary embodiments, a substrate mounting table is provided. The substrate mounting table includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a laminated portion, an intermediate layer, and a coating layer. The laminated portion is provided on the base. The intermediate layer is provided on the laminated portion. The coating layer is provided on the intermediate layer. The laminated portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the coating layer, and is in close contact with the second layer and the coating layer. The second layer is a resin layer. The coating layer is ceramics. In this way, since the second layer provided on the electrode layer of the electrostatic chuck is known to have a relatively high insulation resistance as a resin, the thickness of the second layer can be sufficiently reduced while maintaining a predetermined insulation resistance. Therefore, the combined capacitance of the electrostatic chuck is increased, and the potential between the base and the substrate placed on the substrate mounting table is reduced, so that when a voltage is applied to the substrate mounting table at a relatively low frequency, the voltage phase difference is reduced, and thus the occurrence of discharge between the substrate mounting table and the substrate can be suppressed.

[0009] In an exemplary embodiment, the first layer is a resin layer.

[0010] In an exemplary embodiment, the base includes a main body and a sidewall provided on a side of the base. The electrostatic chuck is disposed on the main body and the sidewall. The first layer and the second layer each have a diameter larger than a diameter of the main body. The first layer and the second layer extend over the base to overlap the sidewall.

[0011] In an exemplary embodiment, the intermediate layer includes an end region covering a side surface of the laminate, the end region being in contact with the base and having a tapered shape that narrows in a direction away from the laminate.

[0012] In an exemplary embodiment, the taper angle of the end region is less than or equal to 45°.

[0013] In an exemplary embodiment, the first layer material and the second layer material are either a polyimide resin, a silicone resin, an epoxy resin, or an acrylic resin.

[0014] In an exemplary embodiment, the substrate support further includes an end region that covers a side surface of the laminated portion. The end region is made of a material selected from the group consisting of resin and insulator. The first layer is an insulating layer or a resin layer.

[0015] In an exemplary embodiment, when the first layer is an insulating layer, the material of the first layer is ceramic. When the first layer is a resin layer, the material of the first layer is any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin. The material of the second layer is any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin.

[0016] In an exemplary embodiment, the end regions of the resin have a tapered shape that narrows in a direction away from the laminate.

[0017] In an exemplary embodiment, the base has an insulating region on a surface of the base, the insulating region having a portion extending along a side surface of the laminate, and the end region of the resin is provided between the side surface of the laminate and the insulating region.

[0018] In an exemplary embodiment, the base includes a main body and a sidewall provided on a side of the base. The electrostatic chuck is disposed on the main body and the sidewall. An inner diameter of each of the first layer and the second layer is smaller than an inner diameter of the main body. The first layer and the second layer extend over the base to overlap the sidewall. A surface of the sidewall has a portion that extends along a side of the stack. An end region of the resin is provided between the side of the stack and the portion of the surface of the sidewall.

[0019] In an exemplary embodiment, the diameter of the electrode layer is smaller than the diameter of each of the first and second layers.

[0020] In an exemplary embodiment, the intermediate layer covers the entire surface of the laminate that is attached to the base.

[0021] In an exemplary embodiment, the intermediate layer covers a portion of the sidewall.

[0022] In an exemplary embodiment, the covering layer includes an underlayer and a plurality of protrusions. The underlayer is in close contact with the intermediate layer. The plurality of protrusions are provided on an upper surface of the underlayer.

[0023] In an exemplary embodiment, the surface roughness of the upper surface of the underlayer is 0.05 to 0.5 μm.

[0024] In an exemplary embodiment, the intermediate layer includes a substrate and a plurality of particles dispersed in the substrate, the plurality of particles including exposed portions exposed from the substrate, the exposed portions contacting the second layer and the coating layer.

[0025] In an exemplary embodiment, the substrate material includes a resin or a silane-based agent, and the particulate material is a ceramic. A silane-based agent is, for example, an inorganic material that includes silicon and oxygen atoms.

[0026] In an exemplary embodiment, a substrate processing apparatus is provided, the substrate processing apparatus comprising any of the substrate stages described above.

[0027] The substrate processing apparatus according to the exemplary embodiment includes a high frequency power supply, which is connected to a substrate mounting table and supplies high frequency power of 3 MHz or less to the substrate mounting table.

[0028] Various exemplary embodiments will be described in detail below with reference to the drawings. Note that the same or corresponding parts in each drawing are denoted by the same reference numerals. First, with reference to FIG. 1, one embodiment of the configuration of a substrate mounting table 2 will be described.

[0029] The substrate mounting table 2 is provided in a substrate processing apparatus 1. The substrate processing apparatus 1 may be, for example, but is not limited to, a parallel plate type plasma processing apparatus. The substrate processing apparatus 1 is fully equipped with equipment necessary for plasma processing of a substrate (hereinafter, sometimes referred to as a wafer) mounted on the substrate mounting table 2, but FIG. 1 does not show the detailed configuration of the substrate processing apparatus 1. The detailed configuration of the substrate processing apparatus 1 will be described later with reference to FIG. 7.

[0030] The substrate mounting table 2 has a generally circular disk shape extending so as to intersect with the central axis AX. The substrate mounting table 2 includes an electrostatic chuck 3 and a base 4. The electrostatic chuck 3 is provided on the base 4. The electrostatic chuck 3 includes a laminated portion 3a, an intermediate layer 3b, and a coating layer 3c. The laminated portion 3a is provided on the base 4. The intermediate layer 3b is provided on the laminated portion 3a. The coating layer 3c is provided on the intermediate layer 3b.

[0031] The laminated portion 3a includes a layer 3a1 (first layer), an electrode layer 3a2, and a layer 3a3 (second layer). The layer 3a1 is provided on a base 4. The electrode layer 3a2 is provided on the layer 3a1. The layer 3a3 is provided on the electrode layer 3a2. The layer 3a3 is a resin layer.

[0032] Here, as shown in FIG. 2, the intermediate layer 3b includes a base 3b1 and a plurality of granules 3b2, and the plurality of granules 3b2 are dispersed in the base 3b1. A portion of the plurality of granules 3b2 is exposed from the base 3b1 to the side of the layer 3a3 and the coating layer 3c (more specifically, the underlayer 3c1) that are in contact with the base 3b1. The plurality of granules 3b2 thus includes an exposed portion that is exposed from the base 3b1. This exposed portion is in contact with the layer 3a3 and the coating layer 3c. Therefore, the intermediate layer 3b and the layer 3a3, and the intermediate layer 3b and the coating layer 3c (more specifically, the underlayer 3c1) are adhered to each other with a strong bonding force, thereby improving the degree of adhesion. The coating layer 3c includes a underlayer 3c1 and a plurality of convex portions 3c2. The plurality of convex portions 3c2 are provided on the upper surface 31 of the underlayer 3c1. When a substrate is placed on the substrate mounting table 2, the substrate is in contact with the plurality of protruding portions 3c2.

[0033] Returning to Fig. 1, the intermediate layer 3b covers the entire surface of the laminated portion 3a provided on the base 4 (including the side surface SF2 and the top surface SF3 of the laminated portion 3a). The covering layer 3c covers the entire surface of the intermediate layer 3b provided on the base 4.

[0034] The intermediate layer 3b is provided between the layer 3a3 and the coating layer 3c (particularly the underlayer 3c1). The intermediate layer 3b is in close contact with the layer 3a3 and the underlayer 3c1. The base body 3b1 and the granular body 3b2 are in contact with the underlayer 3c1 and the layer 3a3.

[0035] The thickness TH1 corresponds to the sum of the thickness of the laminated portion 3a and the thickness of the intermediate layer 3b. The thickness TH2 corresponds to the thickness of the laminated portion 3a. The thickness TH3 corresponds to the thickness of the covering layer 3c.

[0036] The base 4 includes a main body 4a and a side wall 4b1 and a side wall 4b2. The side wall 4b1 and the side wall 4b2 are provided on a side surface SF1 of the main body 4a. The electrostatic chuck 3 is disposed on the main body 4a and the side wall 4b1 and the side wall 4b2.

[0037] The side wall portion 4b1 corresponds to an outer wall of the base 4. The side wall portion 4b2 corresponds to a sleeve that defines, within the base 4, a hole GT that penetrates the electrostatic chuck 3 and the base 4. The hole GT can be a hole through which a gas passes, or a hole provided for moving a pin up and down when the wafer W is placed on the substrate mounting table 2.

[0038] 3, the base 4 is provided with a contact pin 4d. The contact pin 4d is electrically connected to the electrode layer 3a2. In the base 4, the contact pin 4d is covered by a sleeve 4c. The configuration shown in FIG. 3 is included in the region ER2 shown in FIG.

[0039] The configuration of the end portion of the substrate mounting table 2 will be described with reference to Fig. 2. The end portion of the substrate mounting table 2 shown in Fig. 2 is included in the region ER1 shown in Fig. 1. The end portion of the substrate mounting table 2 is a portion including a side wall portion 4b1 that corresponds to the outer wall portion of the base 4, and a portion including a side wall portion 4b2 that corresponds to the sleeve that defines the hole GT.

[0040] The intermediate layer 3b has an end region 3bb at the end of the substrate mounting table 2. The end region 3bb covers the side surface SF2 of the laminated portion 3a. The end region 3bb is in contact with the base 4, more specifically, with the side wall portion 4b1 and the side wall portion 4b2.

[0041] The end region 3bb has a tapered shape that narrows in a direction away from the laminated portion 3a. In other words, the end region 3bb has a thickness that decreases in a direction away from the laminated portion 3a. The thickness of the end region 3bb decreases approximately linearly in a direction away from the laminated portion 3a and converges to a thickness TH4.

[0042] More specifically, the thickness of the end region 3bb converges to a thickness TH4 at a location separated from the stack portion 3a by approximately a length LT3. The length LT3 corresponds to the width of the joint between the end region 3bb and the side wall portion 4b1 and the side wall portion 4b2.

[0043] The tapered shape of the end region 3bb is not limited to the approximately linear tapered shape as shown in Fig. 2. For example, the tapered shape of the end region 3bb may be either a concave tapered shape (with negative curvature) as shown in the end region 3bb shown in Fig. 4, or a convex tapered shape (with positive curvature) as shown in the end region 3bb shown in Fig. 5.

[0044] The diameter of electrode layer 3a2 is smaller than the diameters of layers 3a1 and 3a3, respectively. Length LT1 corresponds to half the difference between the diameter of electrode layer 3a2 and the diameters of layers 3a1 and 3a3, respectively.

[0045] The diameter of each of the layers 3a1 and 3a3 is larger than the diameter of the main body portion 4a. The length LT2 corresponds to 1 / 2 of the difference between the diameter of each of the layers 3a1 and 3a3 and the diameter of the main body portion 4a. In this manner, the layers 3a1 and 3a3 extend on the base 4 so as to overlap the side wall portion 4b1 and the side wall portion 4b2. The intermediate layer 3b covers a part of the side wall portion 4b1 and a part of the side wall portion 4b2.

[0046] According to the substrate mounting table 2 having the above configuration, the layers 3a1 and 3a3 sandwiching the electrode layer 3a2 of the electrostatic chuck 3 have high insulation resistance, so that the thicknesses of the layers 3a1 and 3a3 can be sufficiently reduced while maintaining a predetermined insulation resistance. Therefore, the composite capacitance of the electrostatic chuck 3 is increased, and the potential between the substrate mounted on the substrate mounting table 2 and the base 4 can be reduced. Therefore, when a voltage is applied to the substrate mounting table 2 at a relatively low frequency, for example, a frequency of 3 MHz or less, the voltage phase difference is reduced, and thus the occurrence of discharge between the substrate mounting table and the substrate can be suppressed.

[0047] The capacitance (composite capacitance) of the electrostatic chuck 3 is 10 to 21 pF / cm 2 The capacitance is about 10 pF / cm 2 If the capacitance is smaller than this, when high frequency power of 3 MHz or less is applied to the substrate mounting table, discharge between the substrate and the substrate is likely to occur. Also, the upper limit of the capacitance that can be achieved at present is 21 pF / cm 2 It is.

[0048] The electrode layer 3a2 has a thickness of about 5 μm. The layer 3a1 has a thickness of about 25 to 50 μm. The layer 3a1 has a relative dielectric constant of about 3.2. The layer 3a3 has a thickness of about 25 to 50 μm. The layer 3a3 has a relative dielectric constant of about 3.2.

[0049] The adhesive layer 3a4 has a thickness of about 10 to 20 μm. The adhesive layer 3a4 has a relative dielectric constant of about 3.0. The adhesive layer 3a5 has a thickness of about 10 to 20 μm. The adhesive layer 3a5 has a relative dielectric constant of about 3.0.

[0050] The intermediate layer 3b has a thickness of about 20 to 100 μm. The intermediate layer 3b has a relative dielectric constant of about 2.7. The covering layer 3c has a thickness (thickness TH3 shown in FIGS. 1 to 5) of about 65 μm.

[0051] Underlayer 3c1 has a thickness of about 50 μm. Underlayer 3c1 has a relative dielectric constant of about 7.1. Convex portion 3c2 has a thickness of about 15 μm. Convex portion 3c2 has a relative dielectric constant of about 7.1.

[0052] The surface roughness (arithmetic mean roughness: Ra) of the upper surface 31 of the underlayer 3c1 is 0.05 to 0.5 μm. The surface roughness (arithmetic mean roughness: Ra) of the end surfaces 32 of the protrusions 3c2 is 0.05 to 0.5 μm.

[0053] The multiple protrusions 3c2 are provided so as to contact, for example, approximately 20% of the substrate.

[0054] The length LT1 shown in Figs. 2, 4, and 5 is about 1.2 to 2.2 mm. The length LT2 shown in Figs. 2, 4, and 5 is about 0.7 to 1 mm. If the length LT2 is shorter than 0.7 mm, the leakage current increases at the interface between the ceramic and the layer 3a1, making it easier for discharge to occur between the substrate mounting table 2 and the substrate. On the other hand, the area of ​​the laminated portion 3a in contact with the base 4 is maximized in order to obtain an attractive force. Therefore, if the length LT2 is longer than 1 mm, the diameter of the main body portion 4a becomes smaller and the diameter of the ceramic becomes larger, so that the heat extraction area of ​​the base 4 decreases, the temperature of the substrate rises locally, and the temperature uniformity within the substrate decreases.

[0055] The taper angle θ of the end region 3bb shown in FIG. 2 is, for example, 45° or less.

[0056] The layer 3a1 shown in each of Figures 2 to 6 is, for example, a resin layer. In this case, the material of the layer 3a1 and the material of the layer 3a3 may be, for example, a polyimide resin, a silicone resin, an epoxy resin, or an acrylic resin. The materials of the layer 3a1 and the layer 3a3 may be different from each other. The coating layer 3c is ceramics. The material of the side wall portion 4b1 and the material of the side wall portion 4b2 are ceramics.

[0057] The material of the base 3b1 of the intermediate layer 3b contains a resin or a silane-based agent, and the material of the granules 3b2 is ceramic.

[0058] An example of a method for forming the covering layer 3C will be described with reference to Fig. 6. The method for forming the covering layer 3C is not limited to the method shown in Fig. 6 as long as the formation of the convex portion 3c2 of the covering layer 3c can be suitably achieved.

[0059] To carry out the method shown in Fig. 6, a plasma spraying device is used to form a ceramic coating layer 3c by thermal spraying. First, a product PD1 is placed in the plasma spraying device. The product PD1 includes a base 4, a laminated portion 3a, and an intermediate layer 3b. The laminated portion 3a is provided on the base 4, and the intermediate layer 3b is provided on the laminated portion 3a. The laminated portion 3a includes a layer 3a1, an electrode layer 3a2, and a layer 3a3.

[0060] Next, ceramic spraying is performed on the intermediate layer 3b of the product PD1 to form a product PD2. In the ceramic spraying, for example, a powder of a spraying material having a particle diameter of 15 μm or less is sprayed together with a plasma generating gas from the tip of a nozzle into a plasma generating section having a common axis with the nozzle. Next, plasma is generated from the plasma generating gas by power of 50 kW or less in the plasma generating section, and the sprayed powder of the spraying material is liquefied by the plasma and sprayed to cover the surface of the intermediate layer 3b. Since the particle diameter of the powder of the spraying material is small and the amount of power required to melt the powder of the spraying material can be reduced, the coating layer 3d can be formed without burning the intermediate layer 3b during spraying. In the product PD2, the coating layer 3d is formed on the intermediate layer 3b by ceramic spraying. The coating layer 3c shown in FIGS. 1 to 5 is formed by processing the coating layer 3d.

[0061] In the product PD2, the surface of the coating layer 3d is further polished. This polishing makes the surface roughness of the surface of the coating layer 3d approximately the same as the surface roughness of the upper surface 31 of the base layer 3c1 shown in FIGS.

[0062] Next, a mask MK1 made of, for example, resin and having a plurality of openings is placed on the covering layer 3d of the product PD2, thereby forming a product PD3. The openings of the mask MK1 correspond to the positions where the convex portions 3c2 are provided in the covering layer 3c shown in FIGS.

[0063] Next, ceramic spraying is further performed on the mask MK1 and the coating layer 3d of the product PD3 to form a product PD4. The ceramic material used to form the product PD4 is the same as the ceramic material used to form the coating layer 3d. In the product PD4, the openings of the mask MK1 are filled with ceramic, and a ceramic mask MK2 is also formed on the mask MK1. The portions of the product PD4 where the openings of the mask MK1 are filled with ceramic correspond to the protrusions 3c2 shown in Figures 1 to 5.

[0064] Next, the masks MK1 and MK2 are removed from the product PD4 to form a product PD5. In the product PD5, the surface of the coating layer 3d is provided with irregularities (the protrusions correspond to the protrusions 3c2 shown in FIGS. 1 to 5) formed by removing the masks MK1 and MK2.

[0065] Next, the end faces of the convex portions of the covering layer 3d of the product PD5 are polished to form the covering layer 3c from the covering layer 3d, thereby forming the substrate mounting table 2. This polishing makes the surface roughness of the end faces of the convex portions of the covering layer 3d of the product PD5 approximately the same as the surface roughness of the end faces 32 of the convex portions 3c2 shown in FIGS.

[0066] By forming the underlayer 3c1 and the protrusions 3c2 as described above, the surface roughness of not only the end faces 32 of the protrusions 3c2 but also the upper surface 31 of the underlayer 3c1 is reduced. Therefore, for example, when performing plasma cleaning without placing a substrate, the surface is less likely to be broken down by plasma, so that particles generated from the underlayer are sufficiently reduced. Note that the method of forming the protrusions 3c2 is not limited to the method using a mask, and for example, the protrusions 3c2 may be formed without using a mask after the surface of the coating layer 3d of the product PD2 is polished.

[0067] An example of a substrate processing apparatus according to an illustrative embodiment will be described with reference to FIG. 7. The substrate processing apparatus 1 is a parallel plate type capacitively coupled plasma processing apparatus, and has a substantially cylindrical processing container PC (chamber). An yttrium oxide film is sprayed onto the inner surface of the processing container PC, or the inner surface is anodized (anodic oxidation). The inside of the processing container PC is a processing chamber where plasma processing such as etching processing and film formation processing is performed by plasma. The substrate processing apparatus 1 is provided with a substrate mounting table 2 shown in FIGS. 1 to 5.

[0068] A semiconductor wafer (hereinafter, referred to as a "wafer W"), which is an example of a substrate, is placed on the substrate mounting table 2. The substrate mounting table 2 also functions as a lower electrode.

[0069] The DC power supply 30 is electrically connected to the electrode layer 3a2 via a contact pin 4d (see FIGS. 1 and 3). When a DC voltage is applied from the DC power supply 30 to the electrode layer 3a2 by opening and closing the switch 30a, the wafer W is attracted to the electrostatic chuck 3 by electrostatic force.

[0070] An annular focus ring 11 is placed on the outer periphery of the electrostatic chuck 3 so as to surround the outer periphery of the wafer W. The material of the focus ring 11 may be, for example, silicon. The focus ring 11 functions to focus plasma in the processing container PC toward the surface of the wafer W to improve the efficiency of the plasma processing.

[0071] A coolant flow path 12a is formed inside the base 4. A cooling medium (hereinafter also referred to as "coolant") such as cooling water or brine output from a chiller 36 flows and circulates through the coolant inlet pipe 12b, the coolant flow path 12a, and the coolant outlet pipe 12c. The coolant circulating in this manner removes heat from the substrate mounting table 2 made of metal and cools it.

[0072] The heat transfer gas supply source 37 supplies a heat transfer gas, such as He gas, between the front surface of the electrostatic chuck 3 and the back surface of the wafer W via the heat transfer gas supply line 16. With this configuration, the temperature of the electrostatic chuck 3 is controlled by the coolant circulated through the coolant flow passage 12a and the heat transfer gas supplied to the back surface of the wafer W. As a result, the wafer W is controlled to a predetermined temperature.

[0073] A first high frequency power supply 33 that supplies high frequency power HF for generating plasma of a first frequency is connected to the substrate mounting table 2 via a first matcher 33a. A second high frequency power supply 34 that supplies high frequency power LF for generating a bias voltage of a second frequency is connected to the substrate mounting table 2 via a second matcher 34a. The first frequency is, for example, a high frequency of 40 MHz, and the first high frequency power supply 33 can supply the high frequency power HF of the first frequency to the substrate mounting table 2. The second frequency is a high frequency of 3 MHz or less. In this embodiment, the high frequency power HF is applied to the substrate mounting table 2, but may be applied to the gas showerhead 20.

[0074] The first matching box 33a functions to make the internal impedance of the first high frequency power supply 33 and the load impedance appear to match when plasma is generated in the processing container PC. The second matching box 34a functions to make the internal impedance of the second high frequency power supply 34 and the load impedance appear to match when plasma is generated in the processing container PC.

[0075] The gas shower head 20 is attached to close an opening in the ceiling of the processing container PC via a shield ring 21 that covers the outer edge of the gas shower head 20. A variable DC power supply 26 is connected to the gas shower head 20, and a negative direct current voltage (DC) is output from the variable DC power supply 26. The gas shower head 20 may be made of silicon. The gas shower head 20 also functions as a counter electrode (upper electrode) that faces the substrate mounting table 2 (lower electrode).

[0076] The gas shower head 20 is formed with a gas inlet 22 for introducing gas. A center-side gas diffusion chamber 24a and an edge-side gas diffusion chamber 24b branched from the gas inlet 22 are provided inside the gas shower head 20. Gas output from a gas supply source 23 is supplied to the gas diffusion chamber 24a and the gas diffusion chamber 24b via the gas inlet 22, diffused in the gas diffusion chamber 24a and the gas diffusion chamber 24b, and introduced toward the substrate mounting table 2 through a plurality of gas supply holes 25.

[0077] An exhaust port 18 is formed in the bottom surface of the processing container PC, and the inside of the processing container PC is evacuated by an exhaust device 38 connected to the exhaust port 18. This allows the inside of the processing container PC to be maintained at a predetermined vacuum level. A gate valve 17 is provided on the side wall of the processing container PC. The gate valve 17 opens and closes when a wafer W is loaded into or unloaded from the processing container PC.

[0078] The substrate processing apparatus 1 is provided with a control device 100 that controls the operation of the entire apparatus. The control device 100 has a CPU 105 (Central Processing Unit), a ROM 110 (Read Only Memory), and a RAM 115 (Random Access Memory). The CPU 105 executes a desired plasma process such as etching according to a recipe stored in a storage area such as the RAM 115. The recipe includes settings such as process time, pressure (exhaust of gas), high frequency power and voltage, various gas flow rates, temperature inside the processing container PC (temperature of the upper electrode, temperature of the sidewall of the processing container PC, temperature of the wafer W, temperature of the electrostatic chuck 3, etc.), temperature of the coolant from the chiller 36, etc.

[0079] When a plasma process such as etching or film formation is performed, the opening and closing of the gate valve 17 is controlled, and the wafer W is loaded into the process container PC and placed on the substrate mounting table 2. When a DC voltage of positive or negative polarity is applied from the DC power supply 30 to the electrode layer 3a2, the wafer W is electrostatically attracted to and held by the electrostatic chuck 3.

[0080] During processing, a desired gas is supplied from the gas supply source 23 into the processing container PC, and high frequency power HF is applied from the first high frequency power supply 33 to the substrate mounting stage 2. High frequency power LF may be applied from the second high frequency power supply 34 to the substrate mounting stage 2. A negative DC voltage may be applied from the variable DC power supply 26 to the gas shower head 20. As a result, the gas is dissociated above the wafer W to generate plasma, and the wafer W is subjected to plasma processing by the action of the plasma.

[0081] After the plasma processing, a DC voltage having a polarity opposite to that during electrostatic attraction is applied from the DC power source 30 to the electrode layer 3a2, thereby removing the charge on the wafer W. After removing the charge, the wafer W is peeled off from the electrostatic chuck 3 and is transferred out of the processing container PC through the gate valve 17.

[0082] (Modifications) Fig. 8 to Fig. 24 each show a modification of the substrate mounting table 2. Note that the materials of each component related to the modification shown in Fig. 8 to Fig. 24 may be the above-mentioned materials unless otherwise specified below.

[0083] A modified example shown in FIG. 8 will be described. FIG. 8 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1. The resin region 3e is provided on the insulating region 4e and has a tapered shape tapering in a direction away from the laminated portion 3a. The resin region 3e contacts the side surface SF2 and the insulating region 4e of the laminated portion 3a and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the insulating region 4e, and contacts the layer 3a3, the resin region 3e, and the insulating region 4e. The layer 3a1 is a resin layer, and the material of the layer 3a1 is, for example, any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin (the same applies to the material of the layer 3a1 shown in each of FIGS. 9 to 11 and 14 to 16). The layer 3a3 is a resin layer, and the material of the layer 3a3 is, for example, any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin (the same applies to the material of the layer 3a3 shown in each of FIGS. 9 to 24). The material of the main body portion 4a is, for example, SiC (the same applies to the material of the main body portion 4a shown in FIGS. 9 to 24).

[0084] In the configuration shown in FIG. 8, the diameter of the electrode layer 3a2 is smaller than the diameters of the layers 3a1 and 3a3, the intermediate layer 3b covers the entire surface of the laminated portion 3a provided on the base 4, and the intermediate layer 3b covers a part of the side wall portion 4b2 (similar to the configurations in FIG. 9 to FIG. 24). In the configuration shown in FIG. 8, the covering layer 3c includes a base layer 3c1 and a plurality of protrusions 3c2, the base layer 3c1 is in close contact with the intermediate layer 3b, and the plurality of protrusions 3c2 are provided on the upper surface 31 of the base layer 3c1 (similar to the configurations in FIG. 9 to FIG. 24). In the configuration shown in FIG. 8, the surface roughness of the upper surface 31 of the base layer 3c1 is 0.05 to 0.5 μm, and the intermediate layer 3b includes a base 3b1 and a plurality of granular bodies 3b2 dispersed in the base 3b1 (similar to the configurations in FIG. 9 to FIG. 24). In the configuration shown in Fig. 8, the plurality of granules 3b2 include exposed portions that are exposed from the base 3b1, and these exposed portions contact the layer 3a3 and the coating layer 3c (the same applies to the configurations in Figs. 9 to 24). In the configuration shown in Fig. 8, the material of the base 3b1 contains a resin or a silane-based agent, and the material of the granules 3b2 is ceramic (the same applies to the configurations in Figs. 9 to 24).

[0085] A modified example shown in FIG. 9 will be described. FIG. 9 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has a resin region 3e as an end region and an insulating region 3f. The base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1. The resin region 3e is disposed on the insulating region 4e between the insulating region 3f and the laminated portion 3a. The resin region 3e contacts the side surface SF2, the insulating region 3f, and the insulating region 4e of the laminated portion 3a, and covers the side surface SF2. The insulating region 3f contacts the insulating region 4e. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, the insulating region 3f, and the insulating region 4e, and contacts the layer 3a3, the resin region 3e, the insulating region 3f, and the insulating region 4e. The material of the insulating region 3f is an insulating material such as aluminum oxide (the same applies to the materials of the insulating region 3f shown in each of FIGS. 11, 15, and 17).

[0086] A modified example shown in FIG. 10 will be described. FIG. 10 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1. The resin region 3e is provided on the insulating region 4e, contacts the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The insulating region 4e has a portion (convex portion 4e1) that extends along the side surface SF2 of the electrostatic chuck 3. The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the convex portion 4e1 of the insulating region 4e. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the insulating region 4e, and contacts the layer 3a3, the resin region 3e, and the insulating region 4e.

[0087] A modified example shown in FIG. 11 will be described. FIG. 11 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has an insulating region 3f as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1. The insulating region 3f is provided on the insulating region 4e, contacts the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the insulating region 3f, and the insulating region 4e, and contacts the layer 3a3, the insulating region 3f, and the insulating region 4e.

[0088] A modified example shown in FIG. 12 will be described. FIG. 12 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a. The laminated portion 3a shown in FIG. 12 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 12 does not have the adhesive layer 3a4 shown in FIG. 8 and the like. The layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The resin region 3e is provided on the layer 3a1, contacts the side surface SF2 and the layer 3a1 of the laminated portion 3a, covers the side surface SF2, and has a tapered shape tapering in a direction away from the laminated portion 3a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the layer 3a1, and is in contact with the layer 3a3, the resin region 3e, and the layer 3a1. The layer 3a1 is an insulating layer or a resin layer (the same applies to the layer 3a1 shown in each of FIG. 13, and FIG. 17 to FIG. 24). When the layer 3a1 is an insulating film, the material of the layer 3a1 is ceramic, and when the layer 3a1 is a resin layer, the material of the layer 3a1 is any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin. The material of the layer 3a1 shown in each of FIG. 13, and FIG. 17 to FIG. 24 is the same.

[0089] A modified example shown in FIG. 13 will be described. FIG. 13 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The base 4 of the substrate mounting table 2 shown in FIG. 13 has a conductive region 4f, and the configuration of the substrate mounting table 2 shown in FIG. 13 differs from the configuration of the substrate mounting table 2 shown in FIG. 12 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and contacts the main body portion 4a. The layer 3a1 is provided on the conductive region 4f and contacts the conductive region 4f. The material of the conductive region 4f is a conductive material such as aluminum or copper (the same applies to the materials of the conductive region 4f shown in FIG. 14 and each of FIGS. 21 to 24).

[0090] A modified example shown in FIG. 14 will be described. FIG. 14 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The configuration of the substrate mounting table 2 shown in FIG. 14 has a conductive region 4f, and the configuration of the substrate mounting table 2 shown in FIG. 14 differs from the configuration of the substrate mounting table 2 shown in FIG. 8 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and contacts the main body portion 4a. The insulating region 4e is provided on the conductive region 4f and contacts the conductive region 4f. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1.

[0091] The configuration shown in FIG. 14 in which the conductive region 4f is provided is the same in FIGS.

[0092] A modified example shown in FIG. 15 will be described. FIG. 15 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e and an insulating region 3f as end regions, and a resin region 3g. The base 4 includes a main body portion 4a and a side wall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body portion 4a and the side wall portion 4b2. The inner diameters of the layers 3a1 and 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) are smaller than the inner diameter of the main body portion 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layers 3a1 and 3a3 extend on the base 4 so as to overlap the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2, and contacts the adhesive layer 3a4. The resin region 3g extends toward the laminated portion 3a in the vicinity of the laminated portion 3a. The resin region 3e contacts the side surface SF2 and the side wall portion 4b2 of the laminated portion 3a and covers the side surface SF2. The insulating region 3f contacts the side wall portion 4b2. The resin region 3e is disposed on the side wall portion 4b2 between the insulating region 3f and the laminated portion 3a and contacts the insulating region 3f and the laminated portion 3a. The intermediate layer 3b covers the layer 3a3 and the resin region 3e and contacts the layer 3a3 and the resin region 3e.

[0093] A modified example shown in FIG. 16 will be described. FIG. 16 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e as an end region and a resin region 3g. The base 4 includes a main body portion 4a and a side wall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body portion 4a and the side wall portion 4b2. The inner diameters of the layers 3a1 and 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) are smaller than the inner diameter of the main body portion 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layers 3a1 and 3a3 extend on the base 4 so as to overlap with the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and is in contact with the adhesive layer 3a4. The resin region 3g extends so as to widen toward the laminate portion 3a in the vicinity of the laminate portion 3a. The surface of the side wall 4b2 has a portion in contact with the laminated portion 3a and a portion extending along the side surface SF2 of the laminated portion 3a (a portion of the surface of the protruding portion 4b21 included in the side wall 4b2). The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the portion of the surface of the side wall 4b2 (a portion of the surface of the protruding portion 4b21). The resin region 3e is in contact with the side surface SF2 and the side wall 4b2 (particularly the protruding portion 4b21) of the laminated portion 3a, and covers the side surface SF2. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and is in contact with the layer 3a3 and the resin region 3e.

[0094] A modified example shown in FIG. 17 will be described. FIG. 17 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e and an insulating region 3f as an end region, and a resin region 3g. The laminated portion 3a shown in FIG. 17 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 17 does not have the adhesive layer 3a4 shown in FIG. 8 and the like. The layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 includes the main body portion 4a and a side wall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body portion 4a and the side wall portion 4b2. The inner diameter of the layer 3a3 (diameter of the region including the hole GT and defined by the side surface SF2) is smaller than the inner diameter of the main body portion 4a (diameter of the region including the hole GT and defined by the side surface SF1). The layer 3a3 extends on the base 4 so as to overlap with the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and contacts the adhesive layer 3a5. The resin region 3g extends so as to widen toward the laminated portion 3a in the vicinity of the laminated portion 3a. The resin region 3e contacts the side surface SF2 and the side wall portion 4b2 of the laminated portion 3a and covers the side surface SF2. The insulating region 3f contacts the side wall portion 4b2. The resin region 3e is disposed on the side wall portion 4b2 between the insulating region 3f and the laminated portion 3a and contacts the insulating region 3f and the laminated portion 3a. The intermediate layer 3b covers the layer 3a3 and the resin region 3e and is in contact with the layer 3a3 and the resin region 3e.

[0095] A modified example shown in FIG. 18 will be described. FIG. 18 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e as an end region and a resin region 3g. The laminated portion 3a shown in FIG. 18 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 18 does not have the adhesive layer 3a4 shown in FIG. 8 and the like. The layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 includes the main body portion 4a and a side wall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body portion 4a and the side wall portion 4b2. The inner diameter of the layer 3a3 (diameter of the region including the hole GT and defined by the side surface SF2) is smaller than the inner diameter of the main body portion 4a (diameter of the region including the hole GT and defined by the side surface SF1). The layer 3a3 extends on the base 4 so as to overlap with the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and contacts the adhesive layer 3a5. The resin region 3g extends so as to widen toward the laminated portion 3a in the vicinity of the laminated portion 3a. The surface of the side wall portion 4b2 has a portion that contacts the laminated portion 3a and a portion that extends along the side surface SF2 of the laminated portion 3a (a portion of the surface of the protruding portion 4b21 included in the side wall portion 4b2). The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the corresponding portion of the surface of the side wall portion 4b2 (a portion of the surface of the protruding portion 4b21). The resin region 3e contacts the side surface SF2 and the side wall portion 4b2 (particularly the protrusion 4b21) of the laminate portion 3a, and covers the side surface SF2. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and contacts the layer 3a3 and the resin region 3e.

[0096] A modified example shown in FIG. 19 will be described. FIG. 19 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3g as an end region. The laminated portion 3a shown in FIG. 19 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 19 does not have the adhesive layer 3a4 shown in FIG. 8 and the like. The layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 includes the main body portion 4a and a side wall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body portion 4a and the side wall portion 4b2. The inner diameter of the layer 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) is larger than the inner diameter of the main body portion 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layer 3a3 does not overlap the side wall 4b2 and extends only on the main body 4a. The resin region 3g is provided between the main body 4a and the side wall 4b2, contacts the intermediate layer 3b and the side surface SF2 of the laminated portion 3a, and covers the side surface SF2. The resin region 3g extends toward the intermediate layer 3b in the vicinity of the intermediate layer 3b. The intermediate layer 3b covers the layer 3a3, the resin region 3g, and the side wall 4b2, and contacts the layer 3a3, the resin region 3g, and the side wall 4b2.

[0097] A modified example shown in FIG. 20 will be described. FIG. 20 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3g as an end region. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2, and contacts the intermediate layer 3b. The distance between the main body portion 4a and the side wall portion 4b2 (the width of the resin region 3g) increases stepwise toward the intermediate layer 3b. The configuration of the substrate mounting table 2 shown in FIG. 20 differs from the configuration of the substrate mounting table 2 shown in FIG. 19 in terms of the distance between the main body portion 4a and the side wall portion 4b2 (the width of the resin region 3g).

[0098] A modified example shown in Fig. 21 will be described. Fig. 21 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The configuration of the substrate mounting table 2 shown in Fig. 21 has a conductive region 4f, and differs from the configuration of the substrate mounting table 2 shown in Fig. 19 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and contacts the main body portion 4a. The layer 3a1 is provided on the conductive region 4f and contacts the conductive region 4f.

[0099] A modified example shown in Fig. 22 will be described. Fig. 22 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The configuration of the substrate mounting table 2 shown in Fig. 22 has a conductive region 4f, and differs from the configuration of the substrate mounting table 2 shown in Fig. 20 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and contacts the main body portion 4a. The layer 3a1 is provided on the conductive region 4f and contacts the main body portion 4a and the conductive region 4f.

[0100] The configurations shown in FIGS. 21 and 22 in which the conductive region 4f is provided are the same as those in FIGS.

[0101] A modified example shown in FIG. 23 will be described. FIG. 23 is a modified example of the configuration of the substrate mounting table 2 in the region ER1. In the configuration of the substrate mounting table 2 shown in FIG. 23, a recess 4a1 is provided on the surface of the main body 4a. In the recess 4a1, a conductive area 4f, a laminated portion 3a, and a resin area 3e are provided. The laminated portion 3a shown in FIG. 23 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 23 does not have the adhesive layer 3a4 shown in FIG. 8 and the like. The layer 3a1 is provided on the conductive area 4f. The electrode layer 3a2, the adhesive layer 3a5, the layer 3a3, and the resin area 3e are provided on the layer 3a1. The resin area 3e contacts the layer 3a1 and the side surface SF2 of the laminated portion 3a, and covers the side surface SF2. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the main body portion 4a, and is in contact with the layer 3a3, the resin region 3e, and the main body portion 4a.

[0102] A modified example shown in FIG. 24 will be described. FIG. 24 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1. In the configuration of the substrate mounting table 2 shown in FIG. 24, a conductive region 4f is provided on the main body portion 4a, and a laminated portion 3a is provided on the conductive region 4f. The laminated portion 3a shown in FIG. 24 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 24 does not have the adhesive layer 3a4 shown in FIG. 8 and the like. The layer 3a1 is provided on the conductive region 4f. The resin region 3e is provided on the main body portion 4a, contacts the main body portion 4a, the side surface SF2 of the laminated portion 3a, and the side surface of the conductive region 4f, covers the side surface SF2 and the side surface of the conductive region 4f, and has a tapered shape tapering in a direction away from the laminated portion 3a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the main body portion 4a, and is in contact with the layer 3a3, the resin region 3e, and the main body portion 4a.

[0103] 8 to 24, the side surface SF2 of the electrostatic chuck 3 is covered with a resin region 3e made of a material with a relatively high viscosity and the resin region 3e is hardened, or the side surface SF2 of the electrostatic chuck 3 is covered with an insulating region 3f. Therefore, the occurrence of cracks and the like in the intermediate layer 3b and the covering layer 3c covering the resin region 3e or the insulating region 3f whose shape is maintained is suppressed, and the intermediate layer 3b and the covering layer 3c as well as the configuration of the side surface SF2 of the electrostatic chuck 3 (resin region 3e or insulating region 3f) can all be formed in a good shape.

[0104] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and modifications may be made. In addition, elements in different exemplary embodiments may be combined to form other exemplary embodiments.

[0105] From the foregoing, it will be understood that various exemplary embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various exemplary embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0106] 1...substrate processing apparatus, 100...control device, 105...CPU, 11...focus ring, 110...ROM, 115...RAM, 12a...coolant flow path, 12b...coolant inlet pipe, 12c...coolant outlet pipe, 16...heat transfer gas supply line, 17...gate valve, 18...exhaust port, 2...substrate placement table, 20...gas shower head, 21...shield ring, 22...gas inlet port, 23...gas supply source, 24a...gas diffusion chamber, 24b...gas diffusion chamber, 25...gas supply hole, 26...variable DC power supply, 3...electrostatic chuck, 3e...resin region, 3f...insulating region, 3g...resin region, 30...DC power supply, 30a...switch, 31...upper surface, 32...end surface, 33...first high frequency power supply, 33a...first matching box, 34...second high frequency power supply, 34a...second matching box, 36...chiller, 37...heat transfer gas supply source, 38...exhaust device, 3a...stack portion, 3a1...layer, 3a2...electrode layer, 3a3...layer, 3a4...adhesive layer, 3a5...adhesive layer, 3b...intermediate layer, 3b1...substrate, 3b2...granular body, 3bb...end region, 3c...coating layer, 3c1...base layer, 3c2...convex part, 3d...coating Covering layer, 4... Base, 4a... Main body, 4a1... Recess, 4b1... Side wall, 4b2... Side wall, 4b21... Convex, 4c... Sleeve, 4d... Contact pin, 4e... Insulating area, 4e1... Convex, 4f... Conductive area , AX...central axis, ER1...area, ER2...area, GT...hole, LT1...length, LT2...length, LT3...length, MK1...mask, MK2...mask, PC...processing container, PD1...product, PD2...product, PD3...product, PD4...product, PD5...product, SF1...side, SF2...side, SF3...top, TH1...thickness, TH2...thickness, TH3...thickness, TH4...thickness, W...wafer, θ...taper angle.

Claims

1. The base and an electrostatic chuck disposed on the base; Equipped with The electrostatic chuck comprises: a stack disposed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; a first covering layer covering the top surface and the side surface of the laminate; a second coating layer covering the first coating layer and including a ceramic material; and A substrate support comprising:

2. The substrate support according to claim 1 , wherein the first cover layer has an annular portion surrounding the side surface of the stack, the annular portion having a lower surface in contact with the base.

3. The substrate support of claim 2 , wherein the annular portion has a first sloped surface above the lower surface.

4. The substrate support according to claim 3 , wherein the second cover layer has a second inclined surface aligned with the first inclined surface.

5. The substrate support according to claim 3 , wherein the first inclined surface is inclined at an angle of 45 degrees or less with respect to the lower surface.

6. The substrate support of claim 2 , wherein the annular portion has a first curved surface on the lower surface.

7. The substrate support according to claim 6 , wherein the second cover layer has a second curved surface that conforms to the first curved surface.

8. The substrate support according to claim 2 , wherein the laminate comprises a first adhesive layer provided between the first insulating layer and the base.

9. The substrate support of claim 8 , wherein the laminate further comprises a second adhesive layer disposed between the second insulating layer and the first cover layer.

10. The substrate support of claim 1 , wherein the laminate further comprises a second adhesive layer disposed between the second insulating layer and the first cover layer.

11. the first insulating layer includes a ceramic material or a resin material; The resin material is selected from the group consisting of polyimide, silicone, epoxy and acrylic resins. The substrate support of claim 1 .

12. The substrate support of claim 11 , wherein the second insulating layer comprises a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin.

13. the first coating layer includes a substrate and a particulate material dispersed in the substrate; The substrate support of claim 1 , wherein at least a portion of the particulate material contacts the second insulating layer and the top surface of the stack.

14. The substrate comprises a resin or a silane-based agent; The substrate support of claim 13 , wherein the particulate material comprises a ceramic material.

15. a plasma processing chamber; a substrate support disposed within the plasma processing chamber, the substrate support including a base and an electrostatic chuck disposed on the base; an RF power source electrically connected to the substrate support; Equipped with The electrostatic chuck comprises: a stack disposed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; a first covering layer covering the top surface and the side surface of the laminate; a second coating layer covering the first coating layer and including a ceramic material; and A plasma processing apparatus comprising:

16. The plasma processing apparatus of claim 15 , wherein the RF power source is configured to generate RF power having a frequency of 3 MHz or less.

17. The plasma processing apparatus of claim 15 , wherein the RF power source is electrically connected to the base.

Images