Capacitor and manufacturing method for the same

Abstract

To provide a capacitor with high capacitance, and a manufacturing method for the same according to at least one of examples.SOLUTION: A capacitor according to one aspect includes: a structure having a first surface and a second surface, which exist in directions opposite to each other, and having a plurality of openings existing on the first surface; a first internal electrode existing on a region having the opening; a dielectric layer existing on a partial region of the first internal electrode; a second internal electrode existing on the dielectric layer; a first external electrode existing on the first surface and connected to the first internal electrode; and a second external electrode existing on the first surface and connected to the second internal electrode.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a capacitor and a method for manufacturing the same. [Background technology]

[0002] Electronic components used in electronic devices include capacitors, inductors, piezoelectric elements, varistors, thermistors, etc. Among these ceramic electronic components, multilayer capacitors have the advantages of being small, having a high capacitance, and being easy to mount, and can be used in various electronic devices.

[0003] For example, the stacked capacitor can be mounted on substrates of various electronic products such as imaging devices such as liquid crystal display (LCD), plasma display panel (PDP), and organic light-emitting diode (OLED), computers, personal portable terminals, and smartphones, and can be used as a chip-type capacitor that charges and discharges electricity.

[0004] In recent years, the trend toward smaller and thinner electronic products has led to an increased demand for capacitors with higher capacitance than conventional stacked capacitors. Summary of the Invention [Problem to be solved by the invention]

[0005] At least one of the embodiments is directed to providing a capacitor having a high capacitance and a method for manufacturing the same.

[0006] However, the problems to be solved by the embodiments of the present invention are not limited to the above problems, and can be variously expanded within the scope of the technical ideas included in the present invention. [Means for solving the problem]

[0007] A capacitor according to one aspect may include a structure including a first surface and a second surface positioned in opposite directions from each other, with a plurality of openings positioned on the first surface; a first internal electrode positioned on an area where the openings are positioned; a dielectric layer positioned on a partial area of ​​the first internal electrode; a second internal electrode positioned on the dielectric layer; a first external electrode positioned on the first surface and connected to the first internal electrode; and a second external electrode positioned on the first surface and connected to the second internal electrode.

[0008] The structure may be anodized aluminum.

[0009] The plurality of openings may include a first opening and a second opening, and the first external electrode may face a region in which the first opening is located in a direction in which the first surface and the second surface are spaced apart.

[0010] The plurality of openings may include a first opening and a second opening, and the first external electrode may be connected to the first internal electrode in a region located adjacent to the first opening.

[0011] The first external electrode may be connected to the first internal electrode in direct contact therewith.

[0012] The first external electrode may include a first sub-electrode portion in contact with the first internal electrode; and a first main electrode portion located on the first sub-electrode portion.

[0013] The plurality of openings may include a first opening and a second opening, and the second external electrode may face a region in which the second opening is located in a direction in which the first surface and the second surface are spaced apart.

[0014] The plurality of openings may include a first opening and a second opening, and the second external electrode may be connected to the second internal electrode in a region located adjacent to the second opening.

[0015] The second external electrode may be connected to the second internal electrode in direct contact therewith.

[0016] The second external electrode may include a second sub-electrode portion in contact with the second internal electrode; and a second main electrode portion located on the second sub-electrode portion.

[0017] The first external electrode and the second external electrode may be provided in a plurality.

[0018] The dielectric layer may be any one of Al2O3, ZrO2, HfO2, or a combination thereof, or a ZrO2-Al2O3-ZrO2 composite layer, ZAZ.

[0019] A capacitor according to another aspect may include a structure made of anodized aluminum, the structure including a first surface and a second surface positioned in opposite directions, the first surface having a plurality of openings; a first internal electrode positioned in an area between the openings in the first surface and above the openings; a dielectric layer positioned on a portion of the first internal electrode; a second internal electrode positioned on the dielectric layer; a first external electrode connected to the first internal electrode and positioned in a direction in which the first surface of the structure faces; and a second external electrode connected to the second internal electrode and positioned in a direction in which the first surface of the structure faces.

[0020] The opening includes a first opening and a second opening, the dielectric layer and the second internal electrode are absent in an area where the first opening and the second opening are adjacent to each other, and the first external electrode can be connected to the first internal electrode in an area located adjacent to the first opening.

[0021] A filling portion may be positioned on the first internal electrode located in the first opening.

[0022] According to another aspect, a method for manufacturing a capacitor may include providing a substrate having a plurality of openings; forming a first internal electrode on an area where the openings are located; forming a dielectric layer on an area where a second opening is located, except for an area where the first opening is located; and forming a second internal electrode on the dielectric layer.

[0023] An insulating material layer is formed to cover the first internal electrode in the region where the first opening is located and the second internal electrode in the region where the second opening is located; and an open hole can be formed in at least a portion of the region where the first opening is located and the region where the second opening is located.

[0024] A seed layer may be formed on the open hole.

[0025] An external electrode layer may be formed on the seed layer. Effect of the Invention

[0026] According to at least one of the embodiments, a capacitor having a high capacitance and a manufacturing method thereof can be provided. [Brief description of the drawings]

[0027] [Figure 1] 1 is a diagram illustrating a capacitor according to an embodiment. [Diagram 2] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Diagram 3] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 4] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Diagram 5] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 6] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 7] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 8] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 9] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 10] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 11]1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 12] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 13] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 14] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 15] 1 is a diagram illustrating a schematic plan view of a capacitor according to an embodiment; [Figure 16] 13 is a diagram illustrating a schematic plan view of a capacitor according to another embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] Hereinafter, with reference to the accompanying drawings, an embodiment of the present invention will be described in detail so that a person having ordinary skill in the art to which the present invention belongs can easily carry out the present invention. In the drawings, parts that are not related to the description are omitted in order to clearly explain the present invention, and the same reference numerals are used for the same or similar components throughout the specification. In addition, in the accompanying drawings, some components are exaggerated, omitted, or shown in a schematic manner, and the size of each component does not completely reflect the actual size.

[0029] The accompanying drawings are intended to facilitate understanding of the embodiments disclosed in this specification, and are not intended to limit the technical ideas disclosed in this specification. It should be understood that the accompanying drawings include all modifications, equivalents, or alternatives included in the idea and technical scope of the present invention.

[0030] Terms including ordinal numbers such as first, second, etc. may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from another.

[0031] Furthermore, when a part such as a layer, film, region, or plate is said to be "on" or "above" another part, this includes not only when it is "directly on" the other part, but also when there is another part between them. Conversely, when a part is said to be "directly on" another part, it means that there is no other part in between. Furthermore, being "on" or "above" a reference part means being located above or below the reference part, and does not necessarily mean being located "on" or "above" the opposite direction of gravity.

[0032] Throughout the specification, terms such as "comprise" or "have" are to be understood as specifying the presence of a feature, value, step, operation, component, part, or combination thereof described in the specification, but without precluding the possibility of the presence or addition of one or more other features, values, steps, operations, components, parts, or combinations thereof. Thus, when a part is described as "comprising" a certain element, this means that it can further include other elements, rather than excluding other elements, unless specifically stated to the contrary.

[0033] Additionally, throughout the specification, "on a plane" means when the target part is viewed from above, and "on a cross section" means when the target part is cut vertically and viewed from the side.

[0034] Furthermore, throughout the specification, "connected" does not only mean that two or more components are directly connected, but also that two or more components are indirectly connected through other components, that are not only physically connected but also electrically connected, or that are referred to by different names depending on their location or function but are integrated.

[0035] Throughout the specification, the substrate (S) has a structure that is wide in plan and thin in cross section, and the "planar direction of the substrate (S)" refers to the direction parallel to the wide, flat surface of the substrate (S), and the "thickness direction of the substrate (S)" refers to the direction perpendicular to the wide, flat surface of the substrate (S).

[0036] FIG. 1 is a diagram showing a capacitor according to an embodiment.

[0037] Referring to FIG. 1, a capacitor 10 according to one embodiment includes a structure 100 , a first internal electrode 210 , a dielectric layer 220 , a second internal electrode 230 , a first external electrode 300 and a second external electrode 310 .

[0038] The structure 100 includes a first surface 100a and a second surface 100b located in opposite directions. In FIG. 1, the first surface 100a is shown located on the upper side, and the second surface 100b is shown located on the lower side. Thus, the first surface 100a can be the upper surface, and the second surface 100b can be shown as the lower surface. The direction in which the first surface 100a and the second surface 100b face each other can be shown as the up-down direction. The structure 100 is made of an insulating material. A plurality of openings 110 are located in the first surface 100a of the structure 100. The openings 110 may be columnar spaces extending from the first surface 100a toward the second surface 100b. As an example, the structure 100 is made of porous anodized aluminum oxide (AAO), and the openings 110 can be formed by micropores formed in the anodized aluminum oxide. The aspect ratio of the micropores may be 2000 to 3000. The structure 100 may have a structure in which the lower ends of the micropores are closed.

[0039] The first internal electrode 210 is located on the opening 110. Also, the first internal electrode 210 is located in a section between adjacent openings 110 on the first surface 100a of the structure 100. This allows the first internal electrode 210 to be connected to the region located on the opening 110 by the region located on the first surface 100a of the structure 100.

[0040] The openings 110 include a first opening 110a and a second opening 110b. At least one of the multiple openings 110 is provided as the first opening 110a, and the remaining openings 110 are provided as the second openings 110b.

[0041] A filling portion 215 may be positioned on the first internal electrode 210 positioned in the first opening 110a. The filling portion 215 may be made of an insulating material. The filling portion 215 may be formed to fill a space remaining after the first internal electrode 210 is filled in the first opening 110a.

[0042] The dielectric layer 220 is located on a partial region of the first internal electrode 210. The dielectric layer 220 is located on the first internal electrode 210 in the second opening 110b. The dielectric layer 220 is also located on the first internal electrode 210 between adjacent second openings 110b. The dielectric layer 220 is not formed on the first opening 110a and the first internal electrode 210 located in the region between adjacent first openings 110a on the first surface 100a.

[0043] The second internal electrode 230 is located on the dielectric layer 220. That is, the second internal electrode 230 is located on the dielectric layer 220 of the second opening 110b. Also, the second internal electrode 230 is located on the dielectric layer 220 between the adjacent second openings 110b. Thus, the second internal electrode 230 faces the first internal electrode 210 with the dielectric layer 220 therebetween in the region between the second opening 110b and the adjacent second openings 110b. The second internal electrode 230 can be formed to fill the inner space of the second opening 110b. The second internal electrode 230 is not formed in the first opening 110a and the region between the adjacent first openings 110a on the first surface 100a.

[0044] The first external electrode 300 may be connected to the first internal electrode 210. The first external electrode 300 is located in the direction of the first surface 100a of the structure 100. The first external electrode 300 may face the area in which the first opening 110a is located in the vertical direction.

[0045] The first external electrode 300 may be connected to the first internal electrode 210 in a region adjacent to the first opening 110a. Specifically, in the case of the region adjacent to the first opening 110a, there is no dielectric layer 220 on the first internal electrode 210. Thus, the first external electrode 300 is provided to be in direct contact with the first internal electrode 210 in the region adjacent to the first opening 110a, and may be connected to the first internal electrode 210.

[0046] The first external electrode 300 may include a first sub-electrode portion 301 and a first main electrode portion 302 .

[0047] The first sub-electrode unit 301 may be connected to the first internal electrode 210. The first sub-electrode unit 301 may be located on the first internal electrode 210 in a region where at least a portion of the region is located adjacent to the first opening 110a. The first sub-electrode unit 301 may be in direct contact with the first internal electrode 210 in a region where at least a portion of the region is located adjacent to the first opening 110a.

[0048] The first main electrode unit 302 may be connected to the first sub-electrode unit 301. At least a partial area of ​​the first main electrode unit 302 may be located on the first sub-electrode unit 301. At least a partial area of ​​the first main electrode unit 302 may be in direct contact with the first sub-electrode unit 301. As an example, the first main electrode unit 302 may be in direct contact with the first sub-electrode unit 301 in a direction facing the structure 100.

[0049] The second external electrode 310 may be connected to the second internal electrode 230. The second external electrode 310 is located in the direction of the first surface 100a of the structure 100. The second external electrode 310 may face at least a portion of the region in which the second opening 110b is located in the vertical direction.

[0050] The second external electrode 310 is provided to contact at least a portion of the second internal electrode 230 in a region adjacent to the second opening 110 b, and may be connected to the second internal electrode 230 .

[0051] The second external electrode 310 may include a second sub-electrode portion 311 and a second main electrode portion 312 .

[0052] The second sub-electrode unit 311 may be connected to the second internal electrode 230. The second sub-electrode unit 311 may be located on at least a portion of the second internal electrode 230, at least a portion of which is adjacent to the second opening 110b. The second sub-electrode unit 311 may be in direct contact with at least a portion of the second internal electrode 230, at least a portion of which is adjacent to the second opening 110b. The second sub-electrode unit 311 may be provided using the same material as the first sub-electrode unit 301.

[0053] The second main electrode portion 312 may be connected to the second sub-electrode portion 311. At least a partial area of ​​the second main electrode portion 312 may be located on the second sub-electrode portion 311. At least a partial area of ​​the second main electrode portion 312 may be in direct contact with the second sub-electrode portion 311. As an example, the second main electrode portion 312 may be in direct contact with the second sub-electrode portion 311 in a direction facing the structure 100. The second main electrode portion 312 may be provided using the same material as the first main electrode portion 302.

[0054] An insulating part 250 may be located on a region of the first internal electrode 210 adjacent to the first opening 110a other than the region in contact with the first external electrode 300. The insulating part 250 may be located to fill a part of the first external electrode 300 spaced apart from the first internal electrode 210 and a region where the first internal electrode 210 faces each other. Also, the insulating part 250 may be located to fill a part of the first external electrode 300 spaced apart from the first internal electrode 210 and a region where the second external electrode 310 faces each other.

[0055] In addition, an insulating part 250 may be positioned on a region of the second internal electrode 230 adjacent to the second opening 110b other than the region in contact with the second external electrode 310. The insulating part 250 may be positioned to fill a portion of the second external electrode 310 spaced apart from the second internal electrode 230 and a region where the second internal electrodes 230 face each other.

[0056] In addition, the insulating portion 250 may be positioned to fill a step located outside the region where the opening 110 is formed in the structure 100. The insulating portion 250 may be positioned to surround at least a portion of the periphery of the region where the opening 110 is formed in the structure 100.

[0057] The insulating portion 250 may be of the same material as the filling portion 215 .

[0058] 2 to 14 are diagrams showing a method for manufacturing a capacitor according to an embodiment.

[0059] A method for manufacturing the capacitor 10 according to one embodiment will now be described with reference to FIGS.

[0060] Referring to FIG. 2, a substrate (S) for forming a structure 100 is provided. The substrate (S) is provided in a state in which a plurality of openings 110 are formed. The substrate (S) is provided with anodized aluminum oxide (AAO), and the openings 110 may be micropores formed by anodization. At this time, the lower ends of the openings 110 are provided in a closed state. The substrate (S) may be in a state in which the regions in which the openings 110 are located are partitioned to a size corresponding to the size of the capacitor 10 through etching using a mask. The mask may be made through a photoresist (PR) or the like. As a result, the substrate (S) may have a step outside the region in which the openings 110 are located. The substrate (S) may be provided in a state in which it is positioned on a process substrate (PS). The process substrate (PS) improves the operability of the substrate (S) during the manufacturing process of the capacitor 10 and prevents the substrate (S) from being damaged. The process substrate (PS) may be a silicon wafer.

[0061] Referring to FIG. 3, the first internal electrode 210 may be formed on a region where the opening 110 is located in the structure 100. The first internal electrode 210 may be formed on the opening 110. Also, the first internal electrode 210 may be formed on a region where the openings 110 are adjacent to each other. Thus, the first internal electrodes 210 may be formed to be connected to each other. The opening 110 is formed by anodization and has a diameter of several tens of nanometers, so that the first internal electrode 210 may be formed by atomic layer deposition (ALD). The first internal electrode 210 may be formed of TiN or the like. The first internal electrode 210 may be formed to a thickness of 2.9 nm to 3.1 nm.

[0062] 4, a deposition prevention mask M1 is formed on a region where the first opening 110a is located in the structure 100. The deposition prevention mask M1 may be formed through a photoresist (PR).

[0063] 5, the dielectric layer 220 may be formed on the region where the second opening 110b of the structure 100 is located. That is, the dielectric layer 220 may be formed on the first internal electrode 210 of the second opening 110b. Also, the dielectric layer 220 may be formed on the first internal electrode 210 in the region where the second openings 110b are adjacent to each other. The dielectric layer 220 may be formed by atomic layer deposition (ALD). The dielectric layer 220 may be formed of any one of metal oxides such as Al2O3, ZrO2, and HfO2. Also, the dielectric layer 220 may be formed of a combination of metal oxides such as Al2O3, ZrO2, and HfO2. Also, the dielectric layer 220 may be formed of a ZAZ of a ZrO2-Al2O3-ZrO2 composite layer. In this case, the thicknesses of ZrO2, Al2O3, and ZrO2 may be 1.9 nm to 2.1 nm, 0.29 nm to 0.31 nm, and 1.9 nm to 2.1 nm, respectively.

[0064] The deposition prevention mask M1 prevents the dielectric layer 220 from being formed on the first internal electrode 210 in the region where the first opening 110a is located.

[0065] 6, the second internal electrode 230 may be formed on the region where the second opening 110b of the structure 100 is located. That is, the second internal electrode 230 may be formed on the dielectric layer 220 of the second opening 110b. Also, the second internal electrode 230 may be formed on the dielectric layer 220 in the region where the second openings 110b are adjacent to each other. As a result, the second internal electrodes 230 may be formed to be connected to each other. The second internal electrode 230 may be formed of TiN or the like. The second internal electrode 230 is formed to fill the inside of the second opening 110b, and it is possible to prevent the occurrence of voids in the second opening 110b. At this time, the second internal electrode 230 may be formed by atomic layer deposition (ALD). Also, the second internal electrode 230 may be formed by an additional process of filling the inside of the second opening 110b after the atomic layer deposition is performed. An additional process of filling the interior of the second opening 110b can be carried out through the conductive material to form the second internal electrode 230 with the area having been processed through atomic layer deposition.

[0066] The deposition prevention mask M1 prevents the second internal electrode 230 from being formed on the first internal electrode 210 in the region where the first opening 110a is located.

[0067] 7, after the deposition prevention mask M1 is removed, the insulating material layer IM is formed. The deposition prevention mask M1 can be removed by a lift off process, a polishing process, or the like.

[0068] The insulating material layer (IM) is formed to cover the area where the opening 110 is located. That is, the insulating material layer (IM) is formed to cover the first internal electrode 210 on the area where the first opening 110a is located, so that the first internal electrode 210 is not exposed to the outside. Also, the insulating material layer (IM) is formed to cover the second internal electrode 230 on the area where the second opening 110b is located, so that the second external electrode 310 is not exposed to the outside. Also, the insulating material is filled inside the first opening 110a, so that a void can be removed inside the first opening 110a. As a result, the insulating material filled inside the first opening 110a forms the filling portion 215. Also, the insulating material layer (IM) can be formed to fill the step formed outside the area where the opening 110 is located. The insulating material can be polyimide (PI) or the like.

[0069] Referring to FIG. 8, an open hole (OP) may be formed in the insulating material layer (IM1). The open hole (OP) may be formed in at least a portion of the region where the first opening 110a is located and the region where the second opening 110b is located. The first internal electrode 210 formed in the region where the first opening 110a is located is exposed to the outside through the open hole (OP) formed in the region where the second opening 110b is located. The second internal electrode 230 formed in the region where the second opening 110b is located is exposed to the outside through the open hole (OP) formed in the region where the second opening 110b is located. The open hole (OP) may be formed through a lithography process.

[0070] 9, a seed layer (SL) may be formed on the open hole (OP). The seed layer (SL) may be made of a metal material such as Ti or Cu. The seed layer (SL) may be formed through a sputtering process. The seed layer (SL) formed on the open hole (OP) in the region where the first opening 110a is located will contact the first internal electrode 210. The seed layer (SL) formed on the open hole (OP) in the region where the second opening 110b is located will contact the second internal electrode 230.

[0071] Referring to Fig. 10, a mask for external electrodes (M2) may be formed on an insulating material layer (IM1). The mask for external electrodes (M2) may be formed on the outer periphery of the upper end of the open hole (OP). The pattern of the mask for external electrodes (M2) may be formed such that the seed layer (SL) formed on the open hole (OP) is exposed to the outside. The mask for external electrodes (M2) may be formed through a photoresist (PR).

[0072] 11, an external electrode layer (E) may be formed on a seed layer (SL). The external electrode layer (E) may be formed on the seed layer (SL) formed in the open hole (OP) according to a pattern of an external electrode mask (M2). The external electrode layer (E) may be formed through a plating process using Cu, Sn, Ag, etc.

[0073] 12, the mask for external electrodes M2 is removed. The mask for external electrodes M2 can be removed by a lift off process, an ashing process, or the like.

[0074] Referring to FIG. 13, the seed layer (SL) located on the insulating material layer (IM1) is removed. In the process described above in FIG. 9, the seed layer (SL) may be formed on the insulating material layer (IM1) located outside the open hole (OP). Thus, when the mask for external electrode (M2) is formed, the seed layer (SL) may be located between the external electrode layer (E) and the insulating material layer (IM1). Such a seed layer (SL) is exposed to the outside when the mask for external electrode (M2) is removed after the external electrode layer (E) is formed. Therefore, the seed layer (SL) exposed to the outside is removed, and the external electrode layer (E) is electrically separated from each other. Thus, the external electrode layer (E) becomes the first main electrode part 302 and the second main electrode part 312, respectively. And, the seed layer (SL) located under the first main electrode part 302 and the second main electrode part 312 becomes the first sub-electrode part 301 and the second sub-electrode part 311, respectively.

[0075] The seed layer (SL) exposed to the outside can be removed by an etching process or the like.

[0076] 14, a dicing process is performed to separate each capacitor 10 from the others. Prior to the dicing process, the process substrate (PS) may be separated. Prior to the dicing process, a reflow process may be performed to change the shape of the external electrodes 300, 310.

[0077] FIG. 15 is a diagram illustrating a schematic plan view of a capacitor according to an embodiment.

[0078] 15, the capacitor 10 may have a first external electrode 300 and a second external electrode 310 positioned in a direction facing the first surface 100a of the structure 100. The first external electrode 300 may be positioned to face a region in the body where the first opening 110a is positioned, and may be connected to the first internal electrode 210. The second external electrode 310 may be positioned to face at least a portion of a region in which the second opening 110b is positioned, and may be connected to the second internal electrode 230. In addition, the first internal electrodes 210 are entirely connected to each other, and the second internal electrodes 230 are entirely connected to each other.

[0079] Most of the first internal electrode 210 and the second internal electrode 230 are located on the opening 110. Although only a portion of the opening 110 is shown in FIG. 15 for convenience, a large number of the openings 110 are located in the nanostructure of the structure 100, which is anodized aluminum oxide (AAO). As a result, the surface areas of the first internal electrode 210 and the second internal electrode 230 are very large compared to the area occupied by the structure 100, based on a plane intersecting the direction in which the first surface 100a and the second surface 100b of the structure 100 face each other. As a result, the capacitor 10 has a capacitance that is very large compared to its size.

[0080] FIG. 16 is a diagram illustrating a schematic plan view of a capacitor according to another embodiment.

[0081] 16, in the capacitor 10a, a first external electrode 300 and a second external electrode 310 may be positioned in a direction facing a first surface 100a of the structure 100. In the capacitor 10a, as shown in FIG.

[0082] When the opening 110 is positioned based on a plane intersecting the direction in which the first surface 100a and the second surface 100b of the structure 100 face each other, the area occupied by the first external electrode 300 and the second external electrode 310 may be small compared to the area. As a result, the capacitor 10a may include a plurality of first external electrodes 300. In addition, the capacitor 10a may include a plurality of second external electrodes 310.

[0083] The structure 100 may include a plurality of regions in which the first openings 110a are located. Each of the first external electrodes 300 may be located in the structure 100 so as to face the region in which the first openings 110a are located, and may be connected to the first internal electrode 210. Also, each of the second external electrodes 310 may be located in the structure 100 so as to face a part of the region in which the second openings 110b are located, and may be connected to the second internal electrode 230. The first internal electrodes 210 located across the plurality of openings 110 may be connected to each other. As a result, in the capacitor 10a, the position of the first opening 110a where the dielectric layer 220 and the second internal electrode 230 are not formed, and the position and number of the first external electrodes 300 may be adjusted. Also, the second openings 110b are located in regions other than the region in which the first openings 110a are located. As a result, the second internal electrodes 230 located across the plurality of second openings 110b may be connected to each other. Thus, by selecting the area in which the second external electrodes 310 are located from the area in which the second openings 110b are located, the positions and number of the second external electrodes 310 included in the capacitor 10a can be adjusted.

[0084] Although the preferred embodiment of the present invention has been described above, the present invention is not limited thereto, and various modifications can be made within the scope of the claims, the description of the invention, and the accompanying drawings, which of course also fall within the scope of the present invention. [Explanation of symbols]

[0085] 100 structures 110 Aperture 110a 1st opening 110b 2nd opening 210 1st internal electrode 220 Dielectric layer 230 2nd internal electrode 250 Insulation 300 1st external electrode 301 First sub-electrode part 302 First main electrode part 310 2nd external electrode 311 Second sub-electrode part 312 Second main electrode part

Claims

1. a structure including first and second opposed surfaces, the first surface having a plurality of openings disposed therein; a first internal electrode located on the region in which the opening is located; a dielectric layer located on a partial region of the first internal electrode; a second internal electrode located on the dielectric layer; a first outer electrode located on the first surface and connected to a first inner electrode; and a second outer electrode located on the first surface and connecting with the second inner electrode;

2. The capacitor of claim 1 , wherein the structure is anodized aluminum.

3. the plurality of openings include a first opening and a second opening; The capacitor of claim 1 , wherein the first external electrode faces a region in which the first opening is located in a direction in which the first surface and the second surface are spaced apart.

4. the plurality of openings include a first opening and a second opening; The capacitor according to claim 1 , wherein the first external electrode is connected to the first internal electrode in a region adjacent to the first opening.

5. The capacitor of claim 4 , wherein the first external electrode is connected in direct contact with the first internal electrode.

6. The first external electrode is a first sub-electrode portion in contact with the first internal electrode; and The capacitor of claim 5 , comprising a first main electrode portion located on the first sub-electrode portion.

7. the plurality of openings include a first opening and a second opening; The capacitor of claim 1 , wherein the second external electrode faces a region in which the second opening is located in a direction in which the first surface and the second surface are spaced apart.

8. the plurality of openings include a first opening and a second opening; The capacitor according to claim 1 , wherein the second external electrode is connected to the second internal electrode in a region adjacent to the second opening.

9. The capacitor of claim 8 , wherein the second external electrode is connected in direct contact with the second internal electrode.

10. The second external electrode is a second sub-electrode portion in contact with the second internal electrode; and The capacitor of claim 9 , further comprising a second main electrode portion located on the second sub-electrode portion.

11. The capacitor according to claim 1 , wherein the first external electrode and the second external electrode are each provided in a plurality of electrodes.

12. The dielectric layer is Al ２ O ３ , ZrO ２ , HfO ２ or any combination thereof, or ZrO ２ -Al ２ O ３ -ZrO ２ The capacitor of claim 1 which is a composite layer (ZAZ).

13. a structure made of anodized aluminum, the structure including first and second opposed surfaces, the first surface having a plurality of openings disposed therein; a first internal electrode located on said first surface in an area between said openings and over said opening; a dielectric layer located on a partial region of the first internal electrode; a second internal electrode located on the dielectric layer; a first external electrode connected to the first internal electrode and positioned in a direction toward which the first surface of the structure faces; and a second external electrode connected to the second internal electrode and positioned in a direction toward the first surface of the structure;

14. the opening includes a first opening and a second opening; the dielectric layer and the second internal electrode are absent in a region where the first opening and the second opening are adjacent to each other; The capacitor of claim 13 , wherein the first external electrode connects to the first internal electrode in a region located adjacent to the first opening.

15. The capacitor of claim 13 , wherein a filling portion is located on the first internal electrode located in the first opening.

16. providing a substrate having a plurality of openings; forming a first internal electrode on the area where the opening is located; forming a dielectric layer in an area of ​​the opening where a second opening is located, but not in an area of ​​the opening where a first opening is located; and forming a second internal electrode on the dielectric layer.

17. forming an insulating material layer to cover the first internal electrode in a region where the first opening is located and the second internal electrode in a region where the second opening is located; and The method of claim 16 , further comprising forming an open hole in at least a portion of the region in which the first opening is located and the region in which the second opening is located.

18. The method for manufacturing a capacitor according to claim 17 , further comprising forming a seed layer on the open hole.

19. The method for producing a capacitor according to claim 18 , further comprising forming an external electrode layer on the seed layer.

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