Light-emitting device

Abstract

To achieve miniaturization of a light-emitting device or simplification of the components of the light-emitting device while using a space where a semiconductor laser element is arranged as sealing space.SOLUTION: A light-emitting device includes a package having a frame portion, a lid portion, a base that has an upper surface and a lower surface, and has a thickness ranging from 100 μm or more to 500 μm or less, and a first metal member that is provided on the upper surface or lower surface of the base and has a thickness of 10 μm or more to 150 μm or less, and a semiconductor laser element. The base includes an insulating member that has an upper surface and a lower surface and has a first through-hole extending from the upper surface to the lower surface, and a first conductive member provided in the first through-hole. The first metal member is provided on the upper surface or lower surface of the insulating member so as to cover the first through-hole. The semiconductor laser element is disposed in a sealed space which is an inner space of the package, and is electrically connected to the first conductive member and the first metal member.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a light emitting device. [Background technology]

[0002] Japanese Patent Application Laid-Open No. 2019-212752 discloses a light-emitting device in which a semiconductor laser element is arranged in a package. In this light-emitting device, the semiconductor laser element is arranged in a sealed space in consideration of the influence of dust collection. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2019-212752 Summary of the Invention [Problem to be solved by the invention]

[0004] An invention is disclosed that solves the problem of realizing miniaturization of a light emitting device or simplification of components while making the space in which a semiconductor laser element is disposed a sealed space.

[0005] Alternatively, instead of the invention for solving the above-mentioned problem, an invention for solving the problem of suppressing warping of a package for a light emitting device will be disclosed.

[0006] Alternatively, instead of the invention for solving the above-mentioned problems, an invention is disclosed for solving the problem of improving the accuracy of the direction of light emitted from a semiconductor laser element while making the space in which the semiconductor laser element is arranged a sealed space.

[0007] Alternatively, instead of the invention for solving the above-mentioned problems, an invention for solving the problem of mounting other components on the mounting surface of the package with high accuracy will be disclosed.

[0008] Alternatively, instead of the inventions for solving the above-mentioned problems, an invention for solving the problem of improving the heat dissipation of a package will be disclosed.

[0009] In addition, this specification also discloses an invention that solves two or more of the above-mentioned problems in a composite manner. [Means for solving the problem]

[0010] The light emitting device disclosed in the embodiment comprises a package having a frame portion, a lid portion, a base having an upper surface and a lower surface and a thickness of 100 μm or more and 500 μm or less, and a first metal member provided on the upper surface or lower surface of the base and having a thickness of 10 μm or more and 150 μm or less, and a semiconductor laser element, wherein the base has an insulating member having the upper surface and a lower surface and a first through hole extending from the upper surface to the lower surface, and a first conductive member provided in the first through hole, the first metal member being provided on the upper surface or lower surface of the insulating member so as to cover the first through hole, and the semiconductor laser element is disposed in a sealed space inside the package, and is electrically connected to the first conductive member and the first metal member.

[0011] In at least one of the one or more inventions disclosed in the embodiments, it is possible to realize miniaturization of the light emitting device or simplification of the components while making the space in which the semiconductor laser element is disposed a sealed space. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a perspective view of a light emitting device according to each embodiment. [Diagram 2] FIG. 2 is a side view of the light emitting device according to each embodiment. [Diagram 3] FIG. 3 is a cross-sectional view of the light emitting device according to the first embodiment taken along line III-III in FIG. [Figure 4] FIG. 4 is a perspective view showing the inside of the package of the light emitting device according to the first embodiment. [Diagram 5] FIG. 5 is a top view of the light emitting device in the same state as in FIG. [Figure 6]FIG. 6 is a bottom view of the package according to each embodiment. [Figure 7] FIG. 7 is a cross-sectional view of the package according to the first embodiment taken along the line VII-VII in FIG. [Figure 8] FIG. 8 is a top view of the package according to the first embodiment with the lid removed. [Figure 9] FIG. 9 is a cross-sectional view of the light emitting device according to the second and third embodiments taken along the line IX-IX in FIG. [Figure 10] FIG. 10 is a cross-sectional view of the packages according to the second and third embodiments taken along the line XX in FIG. [Figure 11] FIG. 11 is a perspective view showing the state inside the package of the light emitting device according to the second embodiment. [Figure 12] FIG. 12 is a top view of the light emitting device in the same state as in FIG. [Figure 13] FIG. 13 is a perspective view showing the state inside the package of the light emitting device according to the third embodiment. [Figure 14] FIG. 14 is a top view of the light emitting device in the same state as in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] In this specification and claims, polygons such as triangles and quadrangles are referred to as polygons, including shapes in which the corners of the polygons have been processed by rounding, chamfering, removing corners, rounding, etc. Furthermore, shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle parts of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while leaving the polygon as the base are included in the interpretation of "polygon" described in this specification and claims.

[0014] This is not limited to polygons, but also applies to words expressing specific shapes such as trapezoids, circles, and irregular shapes. The same is true when dealing with each side that forms the shape. In other words, even if the corners or middle part of a side have been processed, the interpretation of "side" includes the processed part. Note that when distinguishing a "polygon" or "side" that has no processing from a processed shape, the word "strict" is added, for example, "strict quadrangle."

[0015] In addition, in this specification or the claims, descriptions such as up and down (upper / lower), left and right, front and back, front and back (front / rear), front and back, etc., merely describe relationships such as relative positions, orientations, and directions, and do not necessarily correspond to the relationships during use.

[0016] In addition, directions such as the X direction, the Y direction, and the Z direction may be indicated by using arrows in the drawings. The directions of these arrows are consistent among multiple drawings relating to the same embodiment. In addition, the direction of the arrows marked with X, Y, and Z in the drawings is the positive direction, and the opposite direction is the negative direction. For example, the direction marked with X at the tip of the arrow is the X direction and the positive direction. In this specification, the direction that is the X direction and the positive direction is referred to as the "positive X direction", and the opposite direction is referred to as the "negative X direction". When referring to the "X direction", it includes both the positive and negative directions. The same applies to the Y and Z directions.

[0017] In addition, in this specification, when an object is specified as "one or more" and the object is described, both the form in which the object is one and the form in which the object is multiple are described together. Thus, the description specifying "one or more" supports any of the following embodiments: an embodiment with one or more objects, an embodiment with at least one object, and an embodiment with multiple objects.

[0018] In addition, in this specification, the description of the "one or each" object is a description that combines a description of one object in an embodiment having one object, a description of one object in an embodiment having multiple objects, and a description of each of the objects in an embodiment having multiple objects. Therefore, the description of the "one or each" object supports all of the following: in an embodiment having one object, this one object has explanatory content; in an embodiment having multiple objects, at least one of these objects has explanatory content; in an embodiment having multiple objects, each of these multiple objects has explanatory content; and in an embodiment having one or multiple objects, all of the objects have explanatory content.

[0019] Furthermore, in this specification, the terms "component" and "part" may be used when explaining components, for example. A "component" refers to an object that is physically handled as a single unit. An object that is physically handled as a single unit can also be said to be an object that is handled as a single part in the manufacturing process. On the other hand, a "part" refers to an object that does not need to be physically handled as a single unit. For example, a "part" is used when referring to a portion of a single component, or when referring to multiple components collectively as a single object.

[0020] The distinction between "component" and "part" above does not indicate any intention to consciously limit the scope of the right in the interpretation of the doctrine of equivalents. In other words, even if there is a component described as a "component" in the scope of the patent claim, this does not mean that the applicant recognizes that treating this component as a single physical unit is essential for the application of the present invention.

[0021] In addition, in this specification or claims, when there are multiple elements of a certain type and each element needs to be expressed separately, the elements may be distinguished by adding "first" or "second" to the beginning of the element. In addition, the objects to be distinguished may differ between this specification and the claims. Therefore, even if the claims describe an element with the same notation as this specification, the object identified by this element may not be the same between this specification and the claims.

[0022] For example, if there are elements in this specification that are distinguished by the notation "first," "second," and "third," and the elements to which "first" and "third" are attached in this specification are described in the claims, the elements may be distinguished by the notation "first" and "second" in the claims from the viewpoint of readability. In this case, the elements to which "first" and "second" are attached in the claims refer to the elements to which "first" and "third" are attached in this specification, respectively. Note that this rule is not limited to elements, and can be applied rationally and flexibly to other objects as well.

[0023] Hereinafter, the embodiment for carrying out the present invention will be described. Furthermore, a specific embodiment for carrying out the present invention will be described with reference to the drawings. Note that the embodiment for carrying out the present invention is not limited to this specific embodiment. In other words, the illustrated embodiment is not the only embodiment in which the present invention can be realized. Note that the size and positional relationship of the members shown in each drawing may be exaggerated for ease of understanding.

[0024] First Embodiment A light emitting device 1 according to a first embodiment will be described. FIGS. 1 to 8 are diagrams for explaining an exemplary embodiment of the light emitting device 1. FIG. 1 is a perspective view of the light emitting device 1. FIG. 2 is a side view of the light emitting device 1. FIG. 3 is a cross-sectional view of the light emitting device 1 taken along the III-III cross-sectional line in FIG. 1. FIG. 4 is a perspective view showing the state inside the package 10 of the light emitting device 1. FIG. 5 is a top view of the light emitting device 1 in the same state as in FIG. 4. FIG. 6 is a bottom view of the package 10. FIG. 7 is a cross-sectional view of the package 10 taken along the VII-VII cross-sectional line in FIG. 6. FIG. 8 is a top view of the package 10 without the lid 14. In FIGS. 5, 6, and 8, the first through hole 11H1 and the second through hole 11H2 are indicated by dashed lines.

[0025] The light emitting device 1 includes a plurality of components. The plurality of components include a package 10, one or more semiconductor laser elements 20, one or more reflective members 40, and one or more wirings 60.

[0026] The light emitting device 1 may include other components. For example, the light emitting device 1 may include a semiconductor laser element in addition to the one or more semiconductor laser elements 20. The light emitting device 1 may not include some of the components listed here.

[0027] First, each component will be described.

[0028] (Package 10) The package 10 includes a base 11 and a lid 14. The package 10 includes one or more metal members 15. The lid 14 is joined to the base 11 to form the package 10. An internal space is defined in the package 10 in which other components are disposed. This internal space is a closed space surrounded by the base 11 and the lid 14. In addition, this internal space can be a space that is sealed in a vacuum or airtight state.

[0029] When viewed from above, the outer edge shape of the package 10 is rectangular. This rectangle can be a rectangle having a long side and a short side. In the illustrated package 10, the long side direction of this rectangle is the same as the X direction, and the short side direction is the same as the Y direction. Note that when viewed from above, the outer edge shape of the package 10 does not have to be rectangular.

[0030] In the package 10, an internal space is formed in which other components are disposed. The top surface 11A of the package 10 is a part of the area that defines the internal space. In addition, each of the inner side surfaces 14E and the first bottom surface 14B of the package 10 is also a part of the area that defines the internal space.

[0031] The base 11 has an upper surface 11A and a lower surface 11B. The base 11 also has one or more side surfaces 11C. The base 11 is configured in a rectangular parallelepiped flat plate shape. The shape of the base 11 does not have to be a rectangular parallelepiped.

[0032] The outer edge shape of the upper surface 11A is rectangular. This rectangle may have long and short sides. In the illustrated base 11, the long side of this rectangle is in the same direction as the X direction, and the short side is in the same direction as the Y direction.

[0033] The base 11 has an insulating member 11M having an upper surface 11A and a lower surface 11B, and one or more conductive members 11N. The insulating member 11M is provided with one or more through holes 11H. One or each of the through holes 11H extends from the upper surface 11A to the lower surface 11B.

[0034] One or each of the conductive members 11N is provided in a through hole 11H of the insulating member 11M. By providing the conductive members 11N in the through holes 11H, a conductive path connecting the internal space of the package 10 with the external space is realized.

[0035] The uppermost point of conductive member 11N provided in through hole 11H is the same as upper surface 11A of insulating member 11M, but is located higher than upper surface 11A. Also, the lowermost point of conductive member 11N provided in through hole 11H is the same as lower surface 11B of insulating member 11M, but is located lower than lower surface 11B.

[0036] The one or more through holes 11H include a first through hole 11H1 and a second through hole 11H2. The one or more conductive members 11N include a first conductive member 11N1 provided in the first through hole 11H1 and a second conductive member 11N2 provided in the second through hole 11H2.

[0037] The or each metal member 15 has an upper surface 15A and a lower surface 15B. The or each metal member 15 is provided on the upper surface 11A or the lower surface 11B of the base 11. The or each metal member 15 includes a metal member 15 provided on the base 11 so as to cover the through hole 11H. When viewed from above or below, the through hole 11H is blocked by the metal member 15. This can improve the sealing performance of the package 10.

[0038] The thickness of the base 11 is 100 μm or more and 500 μm or less. In addition, this thickness can be 150 μm or more. In addition, this thickness can be 300 μm or less. The thickness of the base 11 is the width from the upper surface 11A to the lower surface 11B of the base 11.

[0039] The thickness of one or each of the metal members 15 is 10 μm or more and 150 μm or less. This thickness can be 50 μm or more. This thickness can be 100 μm or less. The thickness of the metal member 15 is the width from the upper surface 15A to the lower surface 15B of the metal member 15. By making the thickness of the metal member 15 that closes the through hole 11H 10 μm or more, it is possible to prevent the sealing property of the internal space of the package 10 from being reduced by the through hole 11H, and to realize a sealed space. Furthermore, by reducing the thickness of the metal member 15, it is possible to realize a miniaturized light emitting device.

[0040] One or each of the metal members 15 may be composed of one or more metal layers. For example, it may be composed of a metal layer formed as a thin film of 0.5 μm or less and a metal layer formed with a thickness of 10 μm or more. The thin metal layer is used, for example, to improve the adhesion of the metal member 15 provided on the insulating member 11M.

[0041] Whether the internal space of the package 10 can be said to be a sealed space or not can be determined by a measurement based on the immersion method (bombing method) in the standard number "JIS Z2331:2006" and the standard name "Helium Leak Test Method". 3 ] is 50.0 mm 3 For a package of less than 1000mm², the actual measured leakage amount of helium gas [Pa m 3 / sec] is 1.0×10 -7 Pa·m 3 / sec. Alternatively, from the viewpoint of reliability and warranty, the condition for a more sealed state can be set as the internal volume [mm 3 ] is 0.5 mm 3 Over 4.0mm 3 For the following package, the actual measured leak rate of helium gas [Pa m 3 / sec] is 1.0×10 -9 Pa·m 3A condition for a sealed space can be that the light emitting device has a package and other components, and the test can be performed in the state of the light emitting device without disassembling it into a package. However, if proper testing of the package cannot be performed due to the influence of components other than the package, the test can be performed in a state where proper testing of the package can be performed, such as by separating the influencing components from the package. For example, the inspection device "MUH-0100" by Fukuda Co., Ltd. (English name "FUKUDA CO., LTD.") can be used for this measurement.

[0042] In addition, in determining whether the internal space of the package 10 is a sealed space or not, the test Q in the standard "Environmental Test Methods - Electrical and Electronic - Sealing (Airtightness) Test Method" of the standard number "JIS C0026:2001 (IEC 60068-2-17:1994)" is also used. c: It is advisable to carry out the test method 2 "immersed in high temperature liquid" for sealing test by gas leakage. For a package in which a semiconductor laser element is arranged in an internal space, the temperature of the liquid in this test shall be maintained at a temperature 1°C to 5°C higher than the maximum operating temperature if the operating temperature range is specified as a product standard for the light emitting device equipped with this package. On the other hand, if there is no operating temperature range specified as a product standard, the temperature shall be maintained at a temperature of 75°C to 80°C. In addition, the test shall be carried out with the top of the package or light emitting device immersed at a depth of at least 10 mm from the liquid surface. The immersion time of the package or light emitting device shall be 10 minutes (10 minutes shall have passed), but if the time specified in the product standard is specified as a time shorter than 10 minutes, the time specified in the product standard shall have passed. The test criterion may be whether or not a clear flow of bubbles, two or more large bubbles, or the growth of attached bubbles are observed during the test by a person with a visual acuity of 1.0 or higher. If the product is in the form of a light-emitting device with a package and other components, the test can be performed without disassembling the package. However, if air bubbles caused by components other than the package are observed and appropriate testing of the package is not possible, the component can be separated from the package and the test can be performed in a state where appropriate testing of the package can be performed. Compared to measurements based on the immersion method (bombing method), the test based on this test method 2 is more suitable for determining whether or not a larger leak has occurred. The necessary condition for a sealed space can be determined by conducting this test and satisfying the judgment criteria. For this judgment, for example, an inspection device "G-203A" by Hisol Co., Ltd. can be used.

[0043] The one or more metal members 15 include a first metal member 151 and a second metal member 152. The first metal member 151 is provided on the insulating member 11M so as to cover the first through hole 11H1. The second metal member 152 is provided on the insulating member 11M so as to cover the second through hole 11H2.

[0044] The first metal member 151 and the second metal member 152 are provided on the same surface of the insulating member 11M. For example, the first metal member 151 and the second metal member 152 are provided on the lower surface 11B of the base 11. In this case, the lower surface 15B of the first metal member 151 and the lower surface 15B of the second metal member 152 are located lower than the lower surface 11B of the base 11. The lower surface 15B of the first metal member 151 or the lower surface 15B of the second metal member 152 can be the bottommost surface of the package 10.

[0045] The one or more metal members 15 include a first metal member 151 and a third metal member 153. The third metal member 153 is provided on the surface opposite to the surface on which the first metal member 151 is provided. For example, the first metal member 151 is provided on the lower surface 11B of the insulating member 11M, and the third metal member 153 is provided on the upper surface 11A of the insulating member 11M. By providing metal members 15 of equal thickness on the upper and lower surfaces, warping of the package 10 can be suppressed.

[0046] The third metal member 153 is provided on the insulating member 11M without covering the first through hole 11H1. In other words, the third metal member 153 and the first through hole 11H1 do not overlap in a top view. By providing the third metal member 153 without covering the first through hole 11H1, the upper surface 15A of the third metal member 153 can be provided precisely parallel to the upper surface 11A of the insulating member 11M.

[0047] A part of the third metal member 153 overlaps a part of the first metal member 151 in a top view. By overlapping the first metal member 151 and the third metal member 153, warping of the package 10 can be suppressed.

[0048] The thickness of the insulating member 11M is greater than the thickness of the first metal member 151. Moreover, the thickness of the insulating member 11M is greater than or equal to the sum of the thickness of the first metal member 151 and the thickness of the third metal member 153.

[0049] All of the through holes 11H provided in the insulating member 11M are covered by either all of the metal members 15 provided on the upper surface 11A or the lower surface 11B. In other words, there are no through holes 11H that are not covered by the metal members 15 on either the upper surface 11A or the lower surface 11B.

[0050] For one or each through hole 11H, the distance from the through hole 11H to the outer edge of the metal member 15 covering the through hole 11H is 50 μm or more. Alternatively, this distance may be 100 μm or more. By providing the metal member 15 with a certain width from the through hole 11H, it becomes easier to ensure sealing performance.

[0051] The base 11 has one or more wiring portions 12A. The one or more wiring portions 12A are arranged in the internal space of the package 10. The one or each wiring portion 12A is provided on a top surface 11A of the package 10.

[0052] One or each wiring portion 12A is connected to conductive member 11N. One or more wiring portions 12A include a wiring portion 12A provided so as to cover first through hole 11H1 or second through hole 11H2. One or more wiring portions 12A include a first wiring portion 12A1 provided so as to cover first through hole 11H1. One or more wiring portions 12A include a second wiring portion 12A2 provided so as to cover second through hole 11H2.

[0053] The third metal member 153 is electrically connected to the first wiring portion 12A1. The third metal member 153 and the first wiring portion 12A1 have portions that are in physical contact with each other. For example, the lower end of the side surface of the third metal member 153 and the outer edge of the upper surface of the first wiring portion 12A1 are in physical contact with each other, thereby electrically connecting the third metal member 153 and the first wiring portion 12A1. The first through hole 11H1 does not overlap the third metal member 153 in a top view and is covered by the first wiring portion 12A1. In the package 10, there is no metal member 15 that is in contact with the second wiring portion 12A2.

[0054] A metal member 15 that does not cover the through-hole 11H may be provided on the lower surface 11B of the base 11. This metal member 15 is larger than both the first metal member 151 and the second metal member 152 when viewed from below. This metal member 15 overlaps with the third metal member 153 when viewed from above. This forms a heat dissipation path from the third metal member 153 to this metal member 15.

[0055] When viewed from below, the first metal member 151 and the second metal member 152 are arranged side by side in the short side direction of the bottom surface 11B. The metal member 15 that does not cover the through hole 11H is arranged away from both the first metal member 151 and the second metal member 152 in the long side direction of the bottom surface 11B. This stabilizes the balance of the package 10.

[0056] The thickness (width in the vertical direction) of the wiring portion 12A is 0.2 μm or more and 5 μm or less. The thickness of the wiring portion 12A is sufficiently thinner than the thickness of the metal member 15. For example, the thickness of the wiring portion 12A can be 10% or less of the thickness of the metal member 15.

[0057] All of the through holes 11H extending from the upper surface 11A to the lower surface 11B of the base 11 are covered on at least one of the upper surface 11A side and the lower surface 11B side by the metal member 15. Since there are no through holes 11H that are not covered by the metal member 15, the sealing performance of the package 10 can be improved.

[0058] A relationship is established between the "plurality of metal members 15" as all the metal members 15 provided on the upper surface 11A or the lower surface 11B of the base 11, and the "plurality of through holes 11H" as all the through holes 11H extending from the upper surface 11A to the lower surface 11B of the base 11, in which all of the "plurality of through holes 11H" are covered by any of the "plurality of metal members 15." Note that the "plurality of metal members 15" here includes at least the first metal member 151 and the second metal member 152, and the "plurality of through holes 11H" includes at least the first through hole 11H1 and the second through hole 11H2.

[0059] The base 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the upper surface 11A. The bonding pattern 13A is provided in an annular shape. The bonding pattern 13A is provided in a rectangular annular shape. When viewed from above, the bonding pattern 13A is provided near the outer edge of the upper surface 11A.

[0060] The bonding pattern 13A does not cover the through holes 11H. That is, in a top view, the bonding pattern 13A does not overlap any of the through holes 11H. The thickness of the bonding pattern 13A is 0.2 μm or more and 5 μm or less. The thinner the bonding pattern 13A is, the smaller the vertical width of the package can be. The thickness of the bonding pattern 13A is smaller than the thickness of the metal member 15. The thickness of the bonding pattern 13A may be equal to or greater than the thickness of the metal member 15.

[0061] The base 11 can be formed, for example, using ceramic as the main material. Examples of the ceramic that is the main material of the base 11 include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0062] Here, the main material refers to the material that occupies the largest proportion of the mass or volume of the target structure. Note that when the target structure is formed from one material, that material is the main material. In other words, when a material is the main material, it includes the possibility that the proportion of that material can be 100%.

[0063] The conductive member 11N can be formed, for example, by using a metal material as the main material. Examples of the metal material that is the main material of the conductive member 11N include simple metals such as Cu, Ag, Ni, Cr, and W, and alloys containing these metals. The conductive member 11N can be composed of, for example, one or more metal layers.

[0064] The metal member 15 can be formed by using a metal material as a main material. Examples of the metal material that is the main material of the metal member 15 include simple metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, and alloys containing these metals. The metal member 15 can be composed of, for example, one or more metal layers. The metal member 15 can be formed on the upper surface 11A or the lower surface 11B of the base 11 by processing such as plating or lamination.

[0065] The wiring portion 12A can be formed, for example, by using a metal material as a main material. Examples of the metal material that is the main material of the wiring portion 12A include simple metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, and alloys containing these metals. The wiring portion 12A can be composed of, for example, one or more metal layers. The wiring portion 12A can be formed on the upper surface 11A or the lower surface 11B of the base 11 by processing such as plating, sputtering, and vapor deposition.

[0066] The bonding pattern 13A can be formed, for example, by using a metal material as a main material. Examples of the metal material that is the main material of the bonding pattern 13A include simple metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, and alloys containing these metals. The bonding pattern 13A can be formed, for example, by one or more metal layers.

[0067] The cover 14 has an upper surface 14A and a first lower surface 14B. The cover 14 has a second lower surface 14C. The cover 14 has one or more outer surfaces 14D. The cover 14 has one or more inner surfaces 14E. The one or more outer surfaces 14D intersect with the upper surface 14A. The one or more outer surfaces 14D intersect with the second lower surface 14C. The one or more inner surfaces 14E intersect with the first lower surface 14B. The one or more inner surfaces 14E intersect with the second lower surface 14C.

[0068] When viewed from above, the outer edge shape of the lid 14 is rectangular. When viewed from above, the outer edge shape of the lid 14 is the outer edge shape of the package 10. When viewed from above, the outer edge shape of the top surface 14A is rectangular. This rectangle can be a rectangle having long sides and short sides. The long side direction of the top surface 14A and the long side direction of the outer edge shape of the lid 14 are parallel. Note that when viewed from above, the outer edge shape of the top surface 14A does not have to be rectangular.

[0069] In a bottom view, the first lower surface 14B is surrounded by the second lower surface 14C. The second lower surface 14C is an annular surface surrounding the first lower surface 14B in a bottom view. The second lower surface 14C is a rectangular annular surface. Here, the frame defined by the inner edge of the second lower surface 14C is referred to as the inner frame of the second lower surface 14C, and the frame defined by the outer edge of the second lower surface 14C is referred to as the outer frame of the second lower surface 14C.

[0070] The cover 14 has a recess surrounded by a frame by the second lower surface 14C. The recess defines a portion of the cover 14 that is recessed above the second lower surface 14C. The first lower surface 14B is a part of the recess. The one or more inner surfaces 14E are a part of the recess. The first lower surface 14B is located above the second lower surface 14C.

[0071] The lid body 14 has a lid portion 14M and a frame portion 14N. The lid portion 14M and the frame portion 14N may be made of different materials. The lid body 14 may be configured to include a lid member corresponding to the lid portion 14M and a frame member corresponding to the frame portion 14N.

[0072] The lid portion 14M includes an upper surface 14A. The lid portion 14M includes a first lower surface 14B. The frame portion 14N includes a second lower surface 14C. The frame portion 14N includes one or more outer surfaces 14D and one or more inner surfaces 14E.

[0073] The lid 14 is bonded to the base 11. A second lower surface 14C of the lid 14 is bonded to the upper surface 11A of the base 11. The lid 14 is bonded to the bonding pattern 13A of the base 11. The lid 14 is bonded to the base 11 via an adhesive.

[0074] The lid body 14 has a translucency that transmits light. Here, translucency means that the transmittance of light incident on the lid body 14 is 80% or more. The lid body 14 may have a non-translucent region (a region that does not have translucency) in part.

[0075] The lid body 14 can be formed, for example, using glass as a main material. The lid body 14 may be formed using a lid member and a frame member formed using different main materials. The lid member can be formed, for example, using a light-transmitting material such as glass or sapphire as a main material. The frame member can be formed, for example, using glass or ceramic as a main material. Examples of ceramics that are the main material of the frame member include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0076] The width of the package 10 in the X direction may be 1 mm or more and 3 mm or less. The width of the package 10 in the Y direction may be 2 mm or more and 4 mm or less. The width of the package 10 in the Z direction may be 1 mm or more and 3 mm or less. This enables the light emitting device 1 to be made more compact. The width of the internal space of the package 10 in the X direction may be 0.7 mm or more and 2.4 mm or less. The width of the internal space of the package 10 in the Y direction may be 1.7 mm or more and 3.6 mm or less. The width of the internal space of the package 10 in the Z direction may be 0.3 mm or more and 1.5 mm or less. The internal volume of the internal space of the package 10 is 0.357 mm 3 Over 12.96mm 3 It could be the following:

[0077] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having long sides and short sides. The outer shape of the semiconductor laser element 20 in top view is a rectangle having long sides and short sides. Note that the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 in top view are not limited to this.

[0078] The semiconductor laser element 20 has a light emitting surface 22 that emits light. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C that serves as the light emitting surface 22 intersects with a short side of the top surface 21A. Alternatively, for example, the top surface 21A can serve as the light emitting surface 22.

[0079] A single-emitter semiconductor laser element having one emitter can be used as the semiconductor laser element 20. Also, a multi-emitter semiconductor laser element having multiple emitters can be used as the semiconductor laser element 20.

[0080] For example, a semiconductor laser element that emits blue light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits green light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits red light can be used as the semiconductor laser element 20. Note that the semiconductor laser element 20 may also employ a semiconductor laser element that emits light of other colors or wavelengths.

[0081] Here, blue light refers to light whose emission peak wavelength is in the range of 420nm to 494nm, green light refers to light whose emission peak wavelength is in the range of 495nm to 570nm, and red light refers to light whose emission peak wavelength is in the range of 605nm to 750nm.

[0082] The semiconductor laser element 20 emitting blue light or the semiconductor laser element 20 emitting green light may be a semiconductor laser element containing a nitride semiconductor. As the nitride semiconductor, for example, a GaN-based semiconductor such as GaN, InGaN, or AlGaN may be used. As the semiconductor laser element 20 emitting red light, a semiconductor laser element containing an InAlGaP-based, GaInP-based, or GaAs-based semiconductor such as GaAs or AlGaAs may be used.

[0083] The semiconductor laser element 20 emits directional laser light. Diverging light having a spread is emitted from a light emitting surface 22 (emitting end surface) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface 22. The FFP refers to the shape and light intensity distribution of the emitted light at a position away from the light emitting surface of the semiconductor laser element.

[0084] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis or the light passing through the optical axis. Also, in the light intensity distribution of the FFP, the peak intensity value is 1 / e 2 The light having an intensity equal to or greater than this will be referred to as the main portion of the light.

[0085] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an ellipse in which the stacking direction is longer than the direction perpendicular to the stacking direction on a plane parallel to the light emission surface 22. The stacking direction is the direction in which multiple semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the in-plane direction of the semiconductor layers. The long axis direction of the elliptical shape of the FFP can also be called the fast axis direction of the semiconductor laser element 20, and the short axis direction can also be called the slow axis direction of the semiconductor laser element 20.

[0086] Based on the light intensity distribution of FFP, the peak light intensity is 1 / e 2 The angle at which the light with this light intensity spreads is defined as the light spread angle of the semiconductor laser element 20. Here, the light spread angle is the angle between the light with the peak light intensity (light passing through the optical axis) and the light with 1 / e of the peak light intensity. 2 The spread angle of light is expressed as the angle between the light with a peak light intensity of 1 / e 2 In addition to the light intensity at half the peak light intensity, the light intensity may also be calculated from the light intensity at half the peak light intensity. 2 This refers to the spread angle of light at a light intensity of

[0087] The divergence angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be equal to or greater than 15 degrees and less than 90 degrees. The divergence angle of this light in the slow axis direction can be greater than 0 degrees and equal to or less than 8 degrees. The divergence angle of this light in the fast axis direction is greater than the divergence angle of the light in the slow axis direction.

[0088] (Reflective member 40) The reflecting member 40 has a lower surface 41A and a light reflecting surface 41B that reflects light. The light reflecting surface 41B is inclined with respect to the lower surface 41A. A straight line connecting the lower end and the upper end of the light reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light reflecting surface 41B is inclined with respect to the lower surface 41A is referred to as the inclination angle of the light reflecting surface 41B.

[0089] The light reflecting surface 41B is a flat surface. The light reflecting surface 41B may be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. The inclination angle of the light reflecting surface 41B does not have to be 45 degrees.

[0090] The main material of the reflective member 40 may be glass, metal, or the like. It is preferable to use a heat-resistant material as the main material of the reflective member 40. The main material may be, for example, glass such as quartz or BK7 (borosilicate glass), or metal such as Al. The reflective member 40 may also be formed using Si as the main material.

[0091] If the main material is a reflective material such as Al, the light reflecting surface 41B can be formed from the main material. Instead of forming the light reflecting surface 41B from the main material, the outline of the reflecting member 40 may be formed from the main material, and the light reflecting surface 41B may be formed on the surface of the outline. In this case, the light reflecting surface 41B may be formed from a metal layer such as Ag or Al, or a Ta 2 O 5 / SiO 2 , TiO 2 / SiO 2 , Nb 2 O 5 / SiO 2 The dielectric multilayer film may be formed using the above dielectric multilayer films.

[0092] The light reflecting surface 41B has a reflectance of 90% or more for the peak wavelength of light irradiated onto the light reflecting surface 41B. This reflectance may be 95% or more. This reflectance can also be 99% or more. The light reflectance is 100% or less or less than 100%. (Wiring 60) The wiring 60 is a linear conductive material with joints at both ends. The joints at both ends become joints with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. Examples of metals that can be used include gold, aluminum, silver, and copper.

[0093] Next, the light emitting device 1 will be described.

[0094] (Light emitting device 1) In the light emitting device 1, one or each semiconductor laser element 20 is disposed in the internal space of the package 10. This allows the space in which the semiconductor laser element 20 is disposed to be a sealed space.

[0095] The or each semiconductor laser element 20 is disposed on an upper surface 11A of the base 11. The or each semiconductor laser element 20 is disposed on the upper surface 11A of the base 11 with a metal member 15 interposed therebetween.

[0096] One or each of the semiconductor laser elements 20 is disposed on an upper surface 15A of the metal member 15. By disposing the semiconductor laser element 20 on the metal member 15, the position of the light emitting point of the semiconductor laser element 20 can be raised.

[0097] One or each of the semiconductor laser elements 20 is directly bonded to the metal member 15. Here, "directly" means that no other components, except for an adhesive, are present between the semiconductor laser elements 20 and the metal member 15. This allows the components of the light emitting device 1 to be simplified.

[0098] The metal member 15 on which the semiconductor laser element 20 is disposed is electrically connected to the conductive member 11N of the package 10. The semiconductor laser element 20 is electrically connected to the conductive member 11N and the metal member 15 provided so as to cover the through hole 11H in which the conductive member 11N is provided. For example, the semiconductor laser element 20 is electrically connected to the first conductive member 11N1 and the first metal member 151. The semiconductor laser element 20 is also electrically connected to the second conductive member 11N2 and the second metal member 152.

[0099] The semiconductor laser element 20 is disposed on an upper surface 15A of the third metal member 153. Since the upper surface 15A of the third metal member 153 is precisely parallel to the upper surface 11A of the base 11, the accuracy of the direction of the light emitted from the semiconductor laser element 20 is also improved.

[0100] By providing a third metal member 153 on the upper surface 11A of the base 11 without covering the through hole 11H, and providing a first metal member 151 on the lower surface 11B of the base 11 so as to cover the through hole 11H, it is possible to enjoy benefits in both the sealing of the internal space of the package 10 and the accuracy of the direction of the light emitted from the semiconductor laser element 20.

[0101] In addition, by providing a second metal member 152 covering the second through hole 11H2 on the lower surface 11B of the base 11 in accordance with the first metal member 151, the bottom surface of the package 10 directly below the first through hole 11H1 and the bottom surface of the package 10 directly below the second through hole 11H2 can be aligned, which leads to stability of the package 10.

[0102] The semiconductor laser element 20 is disposed so that the long side direction of the upper surface 21A is parallel to the long side direction of the package 10. By disposing it in this manner, the light emitting device 1 can be made more compact.

[0103] The or each semiconductor laser element 20 emits light laterally from side surface 21C, which is light emission surface 22. Light traveling in a first direction is emitted from the or each semiconductor laser element 20. In the illustrated light emitting device 1, the first direction is the same as the X direction. The optical axis of the light emitted from the or each semiconductor laser element 20 is the same as the X direction.

[0104] The distance from the upper surface 11A of the package 11 to the lower surface 21B of the semiconductor laser element 20 in a direction perpendicular to the upper surface 11A of the package 11 is more than 0 μm and not more than 150 μm. This distance is preferably 50 μm or more and 130 μm or less. This allows the light emitting device 1 to be made more compact.

[0105] In the light emitting device 1, one or more reflective members 40 are disposed in the internal space of the package 10. The one or each reflective member 40 reflects light emitted from the semiconductor laser element 20. The reflective member 40 is disposed at a position away from the semiconductor laser element 20 in the first direction.

[0106] Light traveling in the first direction from the semiconductor laser element 20 is reflected by the reflecting member 40. A light reflecting surface 41B of the reflecting member 40 reflects the light emitted laterally from the semiconductor laser element 20 upward.

[0107] One or each of the reflecting members 40 is disposed at a position not overlapping with the through hole 11H in a top view. The conductive member 11N makes it possible to prevent the lower surface 41A of the reflecting member 40 from being mounted at an angle to the lower surface 11B of the base 11, so that the lower surface 41A of the reflecting member 40 can be mounted with high accuracy.

[0108] The second through hole 11H2 is provided at a position farther in the second direction than the semiconductor laser element 20 and at a position farther in the second direction than the reflecting member 40 in a top view. This makes it possible to reduce the ratio of the width in the long side direction to the width in the short side direction of the package 10 in a top view. Furthermore, if the width in the long side direction is longer, the stress in the long side direction increases, which affects the mounting accuracy of the semiconductor laser element 20.

[0109] In the light emitting device 1, one or more wirings 60 are provided to electrically connect one or more semiconductor laser elements 20 to the package 10. The one or more wirings 60 include a wiring 60 having one end bonded to the upper surface 21A of the semiconductor laser element 20 and the other end bonded to the wiring portion 12A. The one or more wirings 60 include a wiring 60 having one end bonded to the upper surface 21A of the semiconductor laser element 20 and the other end bonded to the second wiring portion 12A2. The multiple wirings 60 are bonded to the upper surface 21A of one semiconductor laser element 20.

[0110] When the light emitting device 1 includes one semiconductor laser element 20, the internal volume of the package 10 is 0.357 mm 3 More than 2mm 3 It is preferable that the following is true: This allows the light emitting device 1 to be made smaller.

[0111] When the light emitting device 1 includes two semiconductor laser elements 20, the internal volume of the package 10 is 0.6 mm 3 4mm or more 3 It is preferable that the following is true: This allows the light emitting device 1 to be made smaller.

[0112] Although the light emitting device 1 according to the first embodiment has been described above, the member that serves to block the through hole 11H in the light emitting device 1 does not have to be limited to a member mainly made of metal (metal member 15). By employing the first metal member 151 and the second metal member 152, they can also serve as a conductive member to the semiconductor laser element 20, but from the viewpoint of sealing the package 10 alone, any sealing member that has a predetermined thickness or more and can block gas leakage can be used in place of the metal member 15.

[0113] <Second embodiment> A light emitting device 2 according to a second embodiment will be described. FIGS. 1, 2, 6, and 9 to 12 are drawings for explaining an exemplary embodiment of the light emitting device 2. FIG. 1 is a perspective view of the light emitting device 2. FIG. 2 is a side view of the light emitting device 2. FIG. 6 is a bottom view of a package 10A. FIG. 9 is a cross-sectional view of the light emitting device 2 taken along the IX-IX cross-sectional line in FIG. 1. FIG. 10 is a cross-sectional view of the package 10A taken along the XX cross-sectional line in FIG. 6. FIG. 11 is a perspective view showing the state inside the package 10A of the light emitting device 2. FIG. 12 is a top view of the light emitting device 2 in the same state as in FIG. 11.

[0114] Of the above-mentioned description of the light emitting device 1 and each of its components according to the first embodiment, all contents except for those that may be considered to be inconsistent with the drawings of the light emitting device 2 in Figures 1, 2, 6, and 9 to 12 are also applicable to the description of the light emitting device 2. In order to avoid redundancy, all non-inconsistent contents will not be described again here.

[0115] The light emitting device 2 includes a plurality of components. The plurality of components include a package 10A, one or more semiconductor laser elements 20, one or more reflective members 40, and one or more wirings 60.

[0116] (Package 10A) In the package 10A, the third metal member 153 is provided on the insulating member 11M so as to cover the first through hole 11H1. In other words, the third metal member 153 and the first through hole 11H1 overlap in a top view. By providing the metal members 15 on the upper and lower surfaces of the insulating member 11M, the sealing performance of the internal space can be improved.

[0117] In the package 10A, the first through hole 11H1 is covered by the third metal member 153, and therefore the first wiring portion 12A1 provided to cover the first through hole 11H1 in the package 10 is not necessary in the package 10A.

[0118] (Light emitting device 2) In the light emitting device 2, the third metal member 153 has the semiconductor laser element 20 disposed on its upper surface 11A and seals the first through hole 11H1. Moreover, the semiconductor laser element 20 and the first through hole 11H1 do not overlap in top view. This allows the third metal member 153 to extend in the longitudinal direction of the semiconductor laser element 20, thereby improving heat dissipation.

[0119] <Third embodiment> A light emitting device 3 according to a third embodiment will be described. FIGS. 1, 2, 6, 9, 10, 13, and 14 are drawings for explaining an exemplary embodiment of the light emitting device 3. FIG. 1 is a perspective view of the light emitting device 3. FIG. 2 is a side view of the light emitting device 3. FIG. 6 is a bottom view of the package 10B. FIG. 9 is a cross-sectional view of the light emitting device 3 taken along the IX-IX cross-sectional line in FIG. 1. FIG. 10 is a cross-sectional view of the package 10A taken along the XX cross-sectional line in FIG. 6. FIG. 13 is a perspective view showing the state inside the package 10B of the light emitting device 3. FIG. 14 is a top view of the light emitting device 3 in the same state as in FIG. 13.

[0120] Of the above-mentioned descriptions of the light emitting device 1 of the first embodiment, the light emitting device 2 of the second embodiment, and each of the components, all contents except for those that may be considered to be inconsistent with the drawings of the light emitting device 3 in Figures 1, 2, 6, and 9 to 12 are also applicable to the description of the light emitting device 3. In order to avoid redundancy, all non-inconsistent contents will not be repeated here.

[0121] The light emitting device 3 includes a plurality of components. The plurality of components include a package 10B, one or more semiconductor laser elements 20, one or more reflective members 40, and one or more wirings 60.

[0122] (Package 10B) In the package 10B, the one or more metal members 15 include a fourth metal member 154. The fourth metal member 154 is provided on the insulating member 11M so as to cover the second through hole 11H2. The fourth metal member 154 is provided on the surface opposite to the surface on which the second metal member 152 is provided. For example, the second metal member 152 is provided on the lower surface 11B of the insulating member 11M so as to cover the second through hole 11H2, and the fourth metal member 154 is provided on the upper surface 11A of the insulating member 11M so as to cover the second through hole 11H2. By providing the metal members 15 on the upper and lower surfaces of the insulating member 11M, the sealing performance of the internal space can be improved.

[0123] In the package 10B, the second through hole 11H2 is covered by the fourth metal member 154, and therefore the second wiring portion 12A2 provided to cover the second through hole 11H2 in the package 10 is not necessary in the package 10B.

[0124] All of the through holes 11H extending from the upper surface 11A to the lower surface 11B of the base 11 are covered on both the upper surface 11A side and the lower surface 11B side by metal members 15. This includes a first metal member 151 and a second metal member 152. All of the metal members 15 provided on the lower surface 11B of the base 11 can be provided thinly, allowing the package to be made compact.

[0125] (Light emitting device 3) In the light emitting device 3, the one or more wirings 60 include a wiring 60 having one end joined to the upper surface 21A of the semiconductor laser element 20 and the other end joined to the fourth metal member 154. In a top view, the one or more wirings 60 joined to the fourth metal member 154 do not overlap with the second through hole 11H2. In the light emitting device 3, by providing the fourth metal member 154, the length of the wiring 60 can be shortened, and the electrical load on the wiring 60 can be reduced.

[0126] Although each embodiment of the present invention has been described above, the light-emitting device according to the present invention is not strictly limited to the light-emitting device of each embodiment. In other words, the present invention can be realized without being limited to the external shape and structure of the light-emitting device disclosed in each embodiment. The present invention can be applied without necessarily having all the components. For example, if some of the components of the light-emitting device disclosed in the embodiment are not described in the claims, the freedom of design by a person skilled in the art, such as substitution, omission, modification of shape, and change of material, is allowed for those components, and the invention described in the claims is specified to be applied.

[0127] Through the contents described so far in this specification, the following technical matters are disclosed. (Section 1) a package including a frame, a lid, a base having an upper surface and a lower surface and a thickness of 100 μm or more and 500 μm or less, and a first metal member provided on the upper surface or the lower surface of the base and a thickness of 10 μm or more and 150 μm or less; A semiconductor laser element, the base body includes an insulating member having the upper surface and the lower surface, and a first through hole extending from the upper surface to the lower surface, and a first conductive member provided in the first through hole, the first metal member is provided on an upper surface or a lower surface of the insulating member so as to cover the first through hole, The light emitting device, wherein the semiconductor laser element is disposed in a sealed internal space of the package and is electrically connected to the first conductive member and the first metal member. (Section 2) Further comprising a second metal member having a thickness of 10 μm or more and 150 μm or less; The insulating member is provided with a second through hole extending from the upper surface to the lower surface, the base body has a second conductive member provided in the second through hole, the second metal member is provided on an upper surface or a lower surface of the insulating member so as to cover the second through hole, Item 2. The light emitting device according to item 1, wherein the semiconductor laser element is electrically connected to the second conductive member and the second metal member. (Section 3) 3. The light emitting device according to item 2, wherein the first metal member and the second metal member are provided on the same surface of the insulating member. (Section 4) A plurality of metal members, the metal members being all metal members having a thickness of 10 μm or more and 150 μm or less provided on an upper surface or a lower surface of the insulating member, the metal members including at least the first metal member and the second metal member; a plurality of through holes, the through holes being all through holes extending from the upper surface to the lower surface, the plurality of through holes including at least the first through hole and the second through hole; 4. The light emitting device according to claim 2, wherein all of the plurality of through holes are covered with any of the plurality of metal members. (Section 5) Further comprising a third metal member having a thickness of 10 μm or more and 150 μm or less; the first metal member is provided on a lower surface of the insulating member, the third metal member is provided on an upper surface of the insulating member without covering the first through hole, 5. The light emitting device according to any one of items 1 to 4, wherein a portion of the first metal member and a portion of the third metal member overlap each other in a top view. (Section 6) a third metal member having a thickness of 10 μm or more and 150 μm or less; A fourth metal member having a thickness of 10 μm or more and 150 μm or less, the first metal member is provided on a lower surface of the insulating member, the third metal member is provided on an upper surface of the insulating member so as to cover the first through hole, the second metal member is provided on a lower surface of the insulating member, 5. The light emitting device according to any one of items 2 to 4, wherein the fourth metal member is provided on an upper surface of the insulating member so as to cover the second through hole. (Section 7) Item 7. The light emitting device according to item 5 or 6, wherein the semiconductor laser element is disposed on an upper surface of the third metal member. (Section 8) 8. The light emitting device according to any one of items 1 to 7, further comprising a reflecting member disposed in an internal space of the package and configured to reflect light emitted from the semiconductor laser element. (Section 9) 8. The light emitting device according to any one of items 5 to 7, wherein the thickness of the insulating member is greater than the thickness of the first metal member and is greater than or equal to the sum of the thickness of the first metal member and the thickness of the third metal member. (Section 10) a package including a frame, a lid, a base having an upper surface and a lower surface and a thickness from the upper surface to the lower surface of 100 μm or more and 500 μm or less, and a sealing member provided on the upper surface or the lower surface of the base and a thickness of 10 μm or more and 150 μm or less; A semiconductor laser element, the base body includes an insulating member having the upper surface and the lower surface, and a first through hole extending from the upper surface to the lower surface, and a first conductive member provided in the first through hole, the sealing member is provided on an upper surface or a lower surface of the insulating member so as to cover the first through hole, The light emitting device, wherein the semiconductor laser element is disposed in a sealed space inside the package and is electrically connected to the first conductive member. (Section 11) The internal volume of the package is 0.357 mm 3 Over 12.96mm 3 is as follows: The internal space of the package was measured based on the immersion method (bombing method) in the JIS Z2331:2006 standard, and the actual measured leakage amount of helium gas [Pa m] was 0.5 MPa when the bombing pressure [Pa] of helium gas was 0.5 MPa, the bombing pressure time [h] was 1 hour, and the exposure time [h] was within 0.1 hours. 3 / sec] is 1.0×10 -7 Pa·m 3 Item 11. The light-emitting device according to any one of items 1 to 10, which is a sealed space and satisfies the condition that the light-emitting efficiency is less than 1 / sec. (Section 12) The internal volume of the package is 0.357 mm 3 Over 12.96mm 3 is as follows: The internal space of the package was measured based on the immersion method (bombing method) in the JIS Z2331:2006 standard, and the actual measured leakage amount of helium gas [Pa m] was 0.5 MPa when the helium gas bombing pressure [Pa] was 0.5 MPa, the bombing pressure time [h] was 1 hour, and the exposure time [h] was within 5 hours. 3 / sec] is 1.0×10 -9 Pa·m 3 Item 11. The light-emitting device according to any one of items 1 to 10, which is a sealed space and satisfies the condition that the light-emitting efficiency is less than 1 / sec. [Industrial Applicability]

[0128] The light-emitting device described in the embodiment can be used in a head-mounted display. In other words, a head-mounted display can be considered as one application form to which the present invention is applied. However, the present invention is not limited to this, and can be used in various applications such as a projector, lighting, exposure, vehicle headlights, and backlights for other displays. [Explanation of symbols]

[0129] 1, 2, 3 Light emitting device 10, 10A, 10B packages 11 Base 11A Top 11B Bottom side 11C Side 11M Insulation material 11N Conductive materials 11N1 First conductive member 11N2 Second conductive member 11H through hole 11H1 1st through hole 11H2 2nd through hole 12A wiring section 12A1 1st wiring section 12A2 2nd wiring section 13A Joint Pattern 14 cover 14A Above 14B No. 1 below 14C 2nd bottom 14D Outer side 14E Inner side 14M Cover 14N 15 metal parts 15A Above 15B Below 151 1st metal parts 152 2nd metal parts 153 3rd metal parts 154 4th metal parts 20 Semiconductor Ryosoko 21A Above 21B Below 21C Side 22 Light exit surface 40 Reflective materials 41A Below 41B Light reflecting surface 60 Wiring

Claims

1. a package including a frame, a lid, a base having an upper surface and a lower surface and a thickness of 100 μm or more and 500 μm or less, and a first metal member provided on the upper surface or the lower surface of the base and a thickness of 10 μm or more and 150 μm or less; A semiconductor laser element, the base body includes an insulating member having the upper surface and the lower surface, and a first through hole extending from the upper surface to the lower surface, and a first conductive member provided in the first through hole, the first metal member is provided on an upper surface or a lower surface of the insulating member so as to cover the first through hole, The semiconductor laser element is disposed in a sealed internal space of the package, and is electrically connected to the first conductive member and the first metal member.

2. Further comprising a second metal member having a thickness of 10 μm or more and 150 μm or less; The insulating member is provided with a second through hole extending from the upper surface to the lower surface, the base body has a second conductive member provided in the second through hole, the second metal member is provided on an upper surface or a lower surface of the insulating member so as to cover the second through hole, The light emitting device according to claim 1 , wherein the semiconductor laser element is electrically connected to the second conductive member and the second metal member.

3. The light emitting device according to claim 2 , wherein the first metal member and the second metal member are provided on the same surface of the insulating member.

4. A plurality of metal members, the metal members being all metal members having a thickness of 10 μm or more and 150 μm or less provided on an upper surface or a lower surface of the insulating member, the metal members including at least the first metal member and the second metal member; a plurality of through holes, the through holes being all through holes extending from the upper surface to the lower surface, the plurality of through holes including at least the first through hole and the second through hole; The light emitting device according to claim 2 , wherein all of the plurality of through holes are covered with any of the plurality of metal members.

5. Further comprising a third metal member having a thickness of 10 μm or more and 150 μm or less; the first metal member is provided on a lower surface of the insulating member, the third metal member is provided on an upper surface of the insulating member without covering the first through hole, The light emitting device according to claim 1 , wherein a portion of the first metal member and a portion of the third metal member overlap each other in a top view.

6. a third metal member having a thickness of 10 μm or more and 150 μm or less; A fourth metal member having a thickness of 10 μm or more and 150 μm or less, the first metal member is provided on a lower surface of the insulating member, the third metal member is provided on an upper surface of the insulating member so as to cover the first through hole, the second metal member is provided on a lower surface of the insulating member, The light emitting device according to claim 2 , wherein the fourth metal member is provided on an upper surface of the insulating member so as to cover the second through hole.

7. The light emitting device according to claim 5 , wherein the semiconductor laser element is disposed on an upper surface of the third metal member.

8. The light emitting device according to claim 7 , further comprising a reflecting member disposed in an internal space of the package for reflecting the light emitted from the semiconductor laser element.

9. The light emitting device according to claim 7 , wherein the thickness of the insulating member is greater than the thickness of the first metal member and is equal to or greater than the sum of the thickness of the first metal member and the thickness of the third metal member.

10. a package including a frame, a lid, a base having an upper surface and a lower surface and a thickness from the upper surface to the lower surface of 100 μm or more and 500 μm or less, and a sealing member provided on the upper surface or the lower surface of the base and a thickness of 10 μm or more and 150 μm or less; A semiconductor laser element, the base body includes an insulating member having the upper surface and the lower surface, and a first through hole extending from the upper surface to the lower surface, and a first conductive member provided in the first through hole, the sealing member is provided on an upper surface or a lower surface of the insulating member so as to cover the first through hole, The semiconductor laser element is disposed in a sealed internal space of the package and is electrically connected to the first conductive member.

11. The internal volume of the package is 0.357 mm ３ Over 12.96 mm ３ is as follows: The internal space of the package had an actual leak amount [Pa m] of helium gas measured based on the immersion method (bombing method) in the JIS Z2331:2006 standard when the bombing pressure [Pa] of helium gas was 0.5 MPa, the bombing pressurization time [h] was 1 hour, and the leaving time [h] was within 0.1 hour. ３ / sec] is 1.0 x 10 －７ P.A.M. ３ The light emitting device according to claim 1 or 10, which is a sealed space that satisfies the condition that the light emitting device is a light emitting device having a light emitting capacity of less than 1000 s / sec.

12. The internal volume of the package is 0.357 mm ３ Over 12.96 mm ３ is as follows: The internal space of the package had a helium gas leakage amount [Pa m] of 0.5 MPa when the helium gas bombing pressure [Pa] was 0.5 MPa, the bombing pressure time [h] was 1 hour, and the leaving time [h] was within 5 hours, as measured based on the immersion method (bombing method) in the JIS Z2331:2006 standard. ３ / sec] is 1.0 x 10 －９ P.A.M. ３ The light emitting device according to claim 1 or 10, which is a sealed space that satisfies the condition that the light emitting device is a light emitting device having a light emitting capacity of less than 1000 s / sec.

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