Film deposition apparatus

Abstract

To provide a film deposition apparatus capable of holding a work to and releasing the work from a holding region of a turn table and depositing a film while efficiently heating the work in the holding region.SOLUTION: A film deposition apparatus 1 according to an embodiment has: a turn table 31 that holds multiple works 10 in a chamber 20 and circularly transports in a circle trajectory; a film deposition part 40 that deposits a film on the work 10 while being circularly transported; a film treatment part 50 for treating the film deposited; multiple holding regions HA in which each work 10 is held; a heating part 34 arranged in the holding region HA; a pair of table-side pushers 37 that runs through a position where the heating part 34 in the turn table 31 is not overlapped in a plane view, is arranged so as to be movable in a direction parallel to a rotation axis 311, and holds the work 10 and removes work from the holding region HA; and a transportation part 70 that transport the work 10 to the table-side pusher 37.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus. [Background technology]

[0002] Compound semiconductors made by nitriding gallium (Ga) are attracting attention as next-generation device materials. For example, devices using gallium nitride (GaN) include light-emitting devices, power devices, and high-frequency communication devices. These devices are manufactured by forming (depositing) a compound film (GaN film) made by nitriding Ga on silicon (Si) wafers, silicon carbide (SiC) wafers, sapphire substrates, and glass substrates.

[0003] Conventionally, GaN films have been formed by MO-CVD (metal organic chemical vapor deposition). In the MO-CVD method, NH is used for processing to suppress the evaporation of gallium (Ga), which is liquid at room temperature and pressure, and to react Ga with nitrogen (N). 3 A large amount of gas is required, resulting in poor material usage efficiency. Furthermore, the handling of the material gas is difficult, and it is difficult to maintain the state of the device in a stable state, resulting in poor yield. Also, an extra step called dehydrogenation is required for the GaN film, which absorbs hydrogen (H) from the processing gas during processing.

[0004] Therefore, a film formation device has been proposed that increases the efficiency of material usage by flowing sputtering gas and process gas into a vacuum chamber and depositing and nitriding the target material by sputtering onto the workpiece held in the chamber. This type of film formation device does not use reactive gases containing hydrogen (H), so extra processes such as dehydrogenation are not required. Furthermore, since it is sufficient to introduce an easy-to-handle rare gas into the chamber, it is easy to maintain the state of the device in a stable state, resulting in good yields.

[0005] For example, in a film formation apparatus shown in Patent Document 1, a workpiece is circulated and transported on a rotating table, a target material is deposited by sputtering, and the deposited target material is nitrided. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2020-164927 Summary of the Invention [Problem to be solved by the invention]

[0007] Incidentally, when depositing a compound film in which gallium (Ga) is nitrided by sputtering, in order to improve the crystallinity of the film during deposition, it is necessary to deposit the film while heating it to about several hundreds of degrees C. Therefore, in some deposition apparatuses, the heat source is fixedly disposed away from, for example, a rotating table on which the substrate is placed.

[0008] However, when heating from a position away from the rotating table, the workpiece is mainly heated only by radiant heat because the chamber is in a vacuum. This means that even if the workpiece is heated at a close distance of about 30 mm, it is necessary to heat the workpiece to a temperature higher than the required temperature. For example, to heat the workpiece to 600°C, it is necessary to heat it to over 1000°C, which requires a high-output heating device and is costly.

[0009] Therefore, when attempting to heat the workpiece by direct contact, a heat source is provided on the turntable, and in this case, it is preferable to provide the heat source in the area of ​​the turntable where the workpiece is held.

[0010] For example, when pushing up a workpiece to place it on the turntable or remove it from it, a pusher mechanism that can be raised and lowered must be provided in the workpiece holding area of ​​the turntable, penetrating the turntable. Therefore, if a heating source is provided in the workpiece holding area of ​​the turntable, it becomes difficult to arrange a pusher mechanism that raises and lowers the workpiece.

[0011] The present invention has been proposed to solve the problems described above, and aims to provide a film-forming apparatus that enables a workpiece to be held and removed from the holding area of ​​a rotary table, while efficiently heating the workpiece in the holding area while forming a film on it. [Means for solving the problem]

[0012] In order to achieve the above object, the film forming apparatus of this embodiment has a chamber capable of evacuating the inside thereof, a rotary table provided within the chamber, holding a plurality of workpieces and circulating and transporting the workpieces in a circular trajectory, a plasma generator that converts a sputtering gas introduced between a target made of a film forming material and the rotary table into plasma, and has a film forming section that deposits particles of the film forming material by sputtering on the workpieces being circulated and transported by the rotary table to form a film, a film processing section that processes a film deposited by the film forming section on the workpieces being circulated and transported by the rotary table, a plurality of holding areas that are provided in an annular film forming area other than the rotation axis of the rotary table and facing the film forming section and the film processing section, and in which each of the workpieces is held, a heating section that is disposed in the plurality of holding areas, a pair of table side pushers that are provided to pass through positions on the rotary table that do not overlap with the heating sections in a plan view and are movable in a direction parallel to the rotation axis of the rotary table, and that hold and release the workpieces from the holding areas, and a transport section that transports the workpieces to the table side pushers. Effect of the Invention

[0013] According to an embodiment of the present invention, a workpiece can be held on and removed from the holding area of ​​a turntable, and a film can be formed while efficiently heating the workpiece in the holding area. [Brief description of the drawings]

[0014] [Figure 1] 1 is a partially perspective plan view showing a schematic configuration of a film forming apparatus according to an embodiment; [Diagram 2] 2 is a cross-sectional view taken along the line AB in FIG. 1, showing in detail the internal configuration of the film forming apparatus as viewed from the side. [Diagram 3] 2 is a cross-sectional view taken along the line AC in FIG. 1, showing in detail the internal configuration of the film forming apparatus as viewed from the side. [Figure 4] 1A is a top perspective view showing a workpiece to be film-formed, and an absorbing member and a tray on which the workpiece is placed, and FIG. [Diagram 5] 13 is a detailed side view of the internal configuration of the transfer section and a portion of the chamber. FIG. [Figure 6] FIG. 2 is a perspective view showing a table side pusher, a load lock side pusher, and a transport arm. [Figure 7] 1A is a plan view showing a tray and a table-side pusher, and FIG. [Figure 8] 1A is a plan view showing a tray and a load lock side pusher, and FIG. [Figure 9] 1A is a plan view showing a tray and a transport arm, and FIG. [Figure 10] 4 is a flowchart of a process performed by a film forming apparatus according to an embodiment. [Figure 11] 13 is a flowchart showing a procedure for carrying in a workpiece. [Figure 12] 1A is a cross-sectional view showing an example of a layer structure of an LED, and FIG. 1B is an enlarged cross-sectional view of a buffer layer. [Figure 13] FIG. 13 is a diagram showing the internal configuration as seen from the side, illustrating (A) the placement of a tray, (B) the sealing with a lid, and (C) the movement of a pusher on the load lock side to a delivery position. [Figure 14]FIG. 13 is an internal configuration diagram seen from the side, showing (A) the insertion of the transport arm below the load lock pusher, (B) the transfer of the tray from the load lock pusher to the transport arm, and (C) the movement of the tray by the rotation of the transport arm. [Figure 15] FIG. 13 is an internal configuration diagram seen from the side, showing (A) the transfer of the tray from the transport arm to the table-side pusher, (B) the retraction by rotating the transport arm, and (C) the transfer of the tray from the table-side pusher to the rotating table. [Figure 16] 1A is a plan view of a portion of the transfer section and the chamber, showing the lid in a closed state before the tray is placed thereon (A), the lid in an open state (B), and the tray in a placed state (C). [Figure 17] 1A is a plan view of a portion of the transfer section and chamber, showing the lid in a closed state after the tray is placed on the substrate (A), the transfer arm rotating to the tray delivery position (B), and the tray being transferred by the rotation of the transfer arm (C). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] An embodiment of a film forming apparatus will be described with reference to the drawings. Note that the drawings are merely schematic illustrations of each member and each component, and do not accurately depict the dimensions, intervals, and the like. [overview] A film forming apparatus 1 shown in FIGS. 1 to 3 is an apparatus for forming a GaN (Gallium Nitride) film or an AlN (Aluminum Nitride) film on a workpiece 10, which is an object to be formed with a film, by sputtering.

[0016] The workpiece 10 on which the film is formed is, for example, a silicon (Si) wafer, a silicon carbide (SiC) wafer, a sapphire substrate, or a glass substrate. As shown in FIG. 4(A), the workpiece 10 in this embodiment is a circular plate. As described below, the workpiece 10 is placed on a tray 11 and transported. The tray 11 is a plate held by a rotating table 31. The workpiece 10 is placed on the tray 11 via an absorbing member 12, as shown in FIGS. 4(A) and (B).

[0017] The film forming apparatus 1 includes a chamber 20, a transfer section 30, a film forming section 40, a film processing section 50, a surface processing section 60, a transfer section 70, and a control device 90. These will be described in detail below.

[0018] The film forming apparatus 1 is placed in a chamber 20, the inside of which can be evacuated, and while the workpiece 10 is being transported by a transport unit 30, various processes are performed by a film forming unit 40 which performs a film forming process on the workpiece 10, a film processing unit 50 which performs a chemical reaction process on the film formed by the film forming unit 40, and a surface processing unit 60 which processes the surface of the workpiece 10 before film formation or after film formation. The film forming apparatus 1 also has a transport unit 70 for carrying the workpiece 10 in and out of the chamber 20. Each of these units is controlled by a control device 90.

[0019] [Chamber] As shown in Fig. 2, the chamber 20 is a container capable of creating a vacuum inside. The chamber 20 has a cylindrical shape and is formed by being surrounded by a disk-shaped top surface 20a, a disk-shaped bottom surface 20b, and an annular side surface 20c. The inside of the chamber 20 is divided into a plurality of sections by partitions 22. The partitions 22 are rectangular wall plates arranged radially from the center of the cylindrical shape, and extend from the top surface 20a toward the bottom surface 20b, but do not reach the bottom surface 20b. That is, a cylindrical space of the chamber 20 is secured on the bottom surface 20b side of the chamber 20.

[0020] In this cylindrical space, a rotating table 31 for transporting the workpiece 10 is disposed. The lower end of the partitioning portion 22 faces the mounting surface of the rotating table 31 on which the workpiece 10 is placed, with a gap through which the workpiece 10 placed on the rotating table 31 passes. The partitioning portion 22 separates a processing space 41 in which the workpiece 10 is processed by the film forming portion 40. That is, the film forming portion 40 has a processing space 41 smaller than the chamber 20. The partitioning portion 22 suppresses the diffusion of the sputtering gas G1 used in the film forming portion 40 into the chamber 20. In the film forming portion 40, it is only necessary to adjust the pressure in the processing space 41, which is partitioned to be smaller than the chamber 20, and therefore the pressure can be easily adjusted and the plasma discharge can be stabilized.

[0021] The chamber 20 is provided with an exhaust port 21. The exhaust port 21 is connected to an exhaust unit 23. The exhaust unit 23 has piping, a pump, a valve, and the like (not shown). By exhausting air by the exhaust unit 23 through the exhaust port 21, the inside of the chamber 20 can be depressurized and made into a vacuum. The exhaust unit 23 is set to a vacuum level of, for example, 10° C. in order to keep the oxygen concentration low. -4 Evacuate until the pressure reaches 1 Pa.

[0022] 1 and 5, the chamber 20 is provided with a loading / unloading port 24 for loading and unloading the workpiece 10. The loading / unloading port 24 is provided at one location on the side of the chamber 20, and a transfer unit 70, which will be described later, is connected to this position.

[0023] [Transport section] 1 and 5, the transport unit 30 has a rotary table 31, a motor 32, a heat insulating unit 33, a heating unit 34, a rotary connection unit 35, a heat shield unit 36, and a table side pusher 37. The transport unit 30 is provided in the chamber 20, holds a plurality of workpieces 10, and circulates and transports the workpieces 10 along a transport path L which is a circular trajectory. The transport unit 30 also heats the workpieces 10 with the heating unit 34.

[0024] (Rotary table) The rotating table 31 is a disk-shaped member disposed in the chamber 20, and is expanded so as not to come into contact with the inside of the side surface 20c. The rotating table 31 is supported by inserting a cylindrical rotating shaft 311 coaxial with the rotating table 31 into an insertion hole 31a provided in the center of the rotating table 31 via a fastening member 31b. The inside of the rotating shaft 311 is a hollow atmospheric pressure space, and a circular plate 311b is fixed so as to cover the central hole 311a, which is an open end. The rotating shaft 311 also protrudes to the outside through a through hole 20d provided in the bottom surface 20b of the chamber 20, and is fastened to the bottom surface 20b by a fastening member 20e so as to be airtight.

[0025] In the present embodiment, the film forming apparatus 1 is installed so that the rotation axis 311 of the turntable 31 is in the vertical direction, and the direction parallel to the rotation axis 311 is the up-down direction. In the following description, movement in the direction parallel to the rotation axis 311 is referred to as up-down movement or lifting and lowering. However, the installation direction of the film forming apparatus 1 is not limited to this.

[0026] (Motor) The motor 32 is disposed outside the chamber 20 and is a drive source that rotates the rotary shaft 311 via a coupling member (not shown) to continuously rotate the rotary table 31 at a predetermined rotation speed. The rotary table 31 rotates at a speed of, for example, 1 to 150 rpm.

[0027] The workpiece 10 is placed on the tray 11 and transported by the rotating table 31. The tray 11 is a plate held by the rotating table 31. As shown in Figs. 4(A) and (B), the tray 11 in this embodiment is, for example, a horizontally elongated hexagonal quartz plate. A circular hole 11a that holds the absorbing member 12 described below is formed in the center of the tray 11. A step that supports the absorbing member 12 is provided on the inner edge of the hole 11a. The workpiece 10 is placed on the tray 11 via the absorbing member 12.

[0028] As shown in Fig. 4(B), the bottom surface of the tray 11 is formed with a head positioning hole 11b and an arm positioning hole 11c. The head positioning holes 11b are formed along the left and right short sides, two on each side, for a total of four. The arm positioning holes 11c are formed on the left and right sides closer to the central hole 11a than the head positioning holes 11b, for a total of two. Note that cases where the workpiece 10 is held, transferred, conveyed, carried in, or carried out include cases where the workpiece 10 is held, transferred, conveyed, carried in, or carried out via other members such as the tray 11 and the absorbing member 12.

[0029] The absorbing member 12 is a member that absorbs heat from the heating unit 34 and emits electromagnetic waves with a wavelength that absorbs heat of the workpiece 10, thereby increasing the heating efficiency of the workpiece 10. The absorbing member 12 in this embodiment is a circular plate having a circular recess on its upper surface for placing the workpiece 10. The absorbing member 12 is fitted into the hole 11a of the tray 11 so that the upper and lower surfaces of the absorbing member 12 are exposed.

[0030] For example, when the work 10 is a sapphire substrate, the absorbing member 12 is a member that emits electromagnetic waves with a wavelength between mid-infrared and far-infrared, which is the heat absorption wavelength of the sapphire substrate, of about 2 μm to 4 μm. This heat absorption wavelength value is a value when the work 10 is a sapphire substrate, and when another material is used, an absorbing member 12 with a wavelength suitable for the material used is used. The absorbing member 12 is a black plate-like member. For example, carbon graphite or glassy carbon is used as the absorbing member 12. A heat-resistant hard member with a surface painted black may be used as the absorbing member 12. The color does not have to be limited to black. In other words, a paint having a wavelength including the heat absorption wavelength of the work 10 may be applied, and a wide range of heat absorption wavelengths may be used as a member or paint with partially different absorption wavelengths.

[0031] Furthermore, in this embodiment, since the workpiece 10 to be heated is a sapphire substrate that is difficult to heat, the absorbing member 12 is used. If the material of the workpiece 10 itself is one that easily absorbs heat, there is no need to install the absorbing member 12. In other words, if the workpiece 10 can be heated to a desired temperature by the heating unit 34 alone, the absorbing member 12 is not essential.

[0032] As shown in Fig. 1, the turntable 31 is provided with a film-forming area FA where a plurality of workpieces 10 are formed. As shown by the two-dot chain line in Fig. 1, the film-forming area FA is an area other than the rotation axis 311 of the turntable 31 in a plan view, and is an annular area facing the film-forming unit 40 and the film processing unit 50. In the film-forming area FA, holding areas HA where the individual workpieces 10 are held are provided at equal intervals in the circumferential direction.

[0033] As shown in Figs. 1, 5 and 6, the holding area HA is formed with a holding hole 31c having an inner edge with a step into which the outer edge of the tray 11 fits. A pair of positioning pins 31d are provided on the bottom surface of the holding hole 31c in a plan view, sandwiching a heating unit 34 described later. The tray 11 is positioned by fitting the pair of positioning pins 31d into the arm positioning holes 11c, and is placed in the holding hole 31c. As a result, the tray 11 with the workpieces 10 mounted thereon is held in the holding area HA. ​​Note that the diameter of the positioning pins 31d is smaller than the diameter of the arm positioning holes 11c to allow for some misalignment.

[0034] Furthermore, a pair of openings 31e are provided on the bottom surface of the holding hole 31c, outside the pair of positioning pins 31d. A table side pusher 37, which will be described later, penetrates each of the pair of openings 31e and moves in a direction parallel to the rotation shaft 311. That is, a horizontally long tray 11 that protrudes to the left and right of the heating unit 34 in a plan view is used, and the table side pusher 37 moves up and down from the openings 31e provided at the left and right positions of the heating unit 34, so that the workpiece 10 moves up and down. As shown in FIG. 1, six holding areas HA are arranged on the rotating table 31 at intervals of 60°. That is, the film forming apparatus 1 can perform film formation on multiple workpieces 10 held in multiple holding areas HA at the same time, and therefore has very high productivity.

[0035] (Insulation section) 2 and 3, the heat insulating portion 33 is a plate made of a heat insulating material and is fixed to the holding area HA. ​​In this embodiment, the heat insulating portion 33 is supported on the bottom surface of the holding hole 31c. The heat insulating portion 33 is made of, for example, ceramics.

[0036] (heating part) The heating unit 34 is a heater that generates heat by passing electricity through it. The heater may be one that generates heat by resistance heating, one that generates heat by electromagnetic induction heating, or one that generates heat by an LED light source or the like. The heating unit 34 is a circular plate and is fitted onto the heat insulating unit 33. As a result, the heating unit 34 is disposed between the turntable 31 and the workpiece 10 in the holding area HA, and the heat insulating unit 33 is disposed between the heating unit 34 and the turntable 31. The heating unit 34 only needs to be large enough to at least accommodate the workpiece 10 on the absorbing member 12 or the workpiece 10 on the tray 11. For this reason, the heating unit 34 does not necessarily need to be large enough to include the tray 11. The heat insulating unit 33 and the heating unit 34 as described above are each disposed within the holding area HA.

[0037] When the workpiece 10 is placed on the holding area HA of the turntable 31, the upper surface of the heating part 34 is arranged to correspond to the lower side of the absorbing member 12. That is, as shown in Fig. 2, the heat insulating part 33, the heating part 34, the absorbing member 12, and the workpiece 10 are arranged in this order from the bottom of the turntable 31 so as to overlap each other.

[0038] The heat insulating section 33 can prevent the heat generated from the heating section 34 from escaping to the turntable 31 and damaging the turntable 31 (deformation, etc.). It can also prevent heat from radiating from below the turntable 31. The heating section 34 heats the workpiece 10 via the absorbing member 12 of the tray 11. However, as described above, the absorbing member 12 may be omitted and the heating section 34 may be configured to come into contact with the workpiece 10. In other words, the heating section 34 may come into contact with the workpiece 10 to directly heat it, or may heat it indirectly via another member.

[0039] (Rotary connection) The rotary connection part 35 is a connector for electrically connecting the heating part 34, which is circulated and transported along a circular trajectory together with the workpiece 10, to a power source. The rotary connection part 35 in this embodiment is a slip ring having a rotating electrode part 351 and a stationary electrode part 352. Note that a rotary connector can also be used as the rotary connection part 35.

[0040] More specifically, the rotating electrode unit 351 has a plurality of conductive ring electrodes 351a arranged coaxially on a rotating shaft 311 outside the chamber 20. Each ring electrode 351a is connected to the heating unit 34 by a cable 351b (positive electrode wire, negative electrode wire) that passes through a hole provided in the rotating shaft 311 and passes from inside the rotating shaft 311 to the center of a plate 311b, and rotates together with the rotating shaft 311.

[0041] The stationary electrode unit 352 is a component in which a plurality of conductive brush electrodes 352a are fixed at positions in contact with the respective ring electrodes 351a, independently of the rotating shaft 311. The brush electrodes 352a are connected to the control device 90 via cables 352b, and power is supplied to and controlled by the control device 90. In other words, power is applied or stopped to the ring electrode 351a via the brush electrodes 352a, and the temperature of the heating unit 34 is increased or decreased.

[0042] A part of the brush electrode 352a is pressed against the outer periphery of the ring electrode 351a, forming a sliding contact point. This makes the rotating electrode part 351 and the stationary electrode part 352 conductive, and even if the rotating electrode part 351 rotates together with the rotating shaft 311, the ring electrode 351a is always maintained in contact with the brush electrode 352a, so that power can be transmitted to the heating part 34.

[0043] The reason why the rotating connection part 35, which is a slip ring, is provided outside the chamber 20 is to prevent vacuum discharge at the sliding contact point between the brush electrode 352a and the ring electrode 351a. Although simplified in Fig. 2, a pair of cables 351b, 352b connected to the ring electrode 351a and the brush electrode 352a is provided for each heating part 34, and the temperature of each heating part 34 can be controlled individually.

[0044] (Heat shielding section) The heat shield 36 is disposed along the film-forming area FA at a distance from the turntable 31 on the opposite side of the film-forming area FA facing each processing unit of the turntable 31. That is, the heat shield 36 is disposed so as to cover the lower surface of the turntable 31 at a distance. The heat shield 36 has a plurality of heat shield plates 36a. The heat shield plate 36a is a metal member having an L-shaped vertical section, which is composed of a flat plate that is a horizontal ring-shaped plate body and a cylindrical side plate whose outer periphery is raised vertically. In addition, a portion corresponding to the transfer portion 70 is cut out from the cylindrical side plate to form a transfer port in order to transfer the workpiece 10 to the turntable 31. The heat shield plates 36a are disposed in a stacked manner at intervals from each other vertically, and are supported and fixed to the bottom surface 20b of the chamber 20 by the support legs 36b. A rotation shaft 311 is inserted at a distance into the central opening of the heat shield plate 36a.

[0045] In this way, by arranging a plurality of heat shields 36a in a stacked manner from a position close to the rotary table 31 to a position away from the rotary table 31, it is possible to gradually reduce the radiant heat from the heating unit 34 in a vacuum and suppress the heat radiation to the bottom surface 20b of the chamber 20. By suppressing the heat radiation from the bottom surface 20b of the chamber 20, it is possible to prevent damage caused by heat to the inner wall surfaces of the bottom surface 20b and the side surface 20c of the chamber 20, the bearing of the rotating shaft 311, and the like. In order to suppress the damage by heat, a reflecting plate can be provided in addition to the heat shields 36a to prevent the light emitted from the heating unit 34 from hitting the bottom surface 20b of the chamber 20. In order to obtain a similar light reflection effect, the surface of the heat shields 36a can be gold-plated.

[0046] (Table side pusher) 5 and 6, the table side pusher 37 is a member that is provided to be capable of ascending and descending through a position of the heating unit 34 of the turntable 31 that does not overlap in a plan view, and holds and releases the workpiece 10 from the holding area HA. ​​In this embodiment, a pair of table side pushers 37 are provided on either side of the heating unit 34 in a plan view. The table side pushers 37 are provided at a position corresponding to the loading / unloading entrance 24 of the chamber 20.

[0047] The table side pusher 37 has a table side pusher head 371, a table side lift shaft 372, and a drive unit 373. The table side pusher head 371 is a member on which the workpiece 10 is placed. The table side pusher head 371 is a pair of elongated plate bodies extending parallel to a horizontal line connecting the center of the rotation shaft 311 of the rotary table 31 and the center of the carry-in / out port 24 (a horizontal line connecting the center of the rotation shaft 311 and the center of an arm shaft 751 described later). The upper surfaces of the pair of table side pusher heads 371 are horizontal planes at the same height. The interval between the pair of table side pusher heads 371 is larger than the width (length in a direction perpendicular to the longitudinal direction) of the transport arm 75 described later. Therefore, when the table side pusher 37 moves up and down, the table side pusher head 371 does not interfere with the transport arm 75. The distance between the pair of openings 31 e through which the table side pusher 37 including the table side pusher head 371 moves is also larger than the width of the transport arm 75 .

[0048] The table side pusher head 371 is provided with a table side head pin 371a and a table side head protrusion 371b. As shown in Figures 7(A) and (B), the table side head pin 371a fits into the head positioning hole 11b of the tray 11. The table side head pin 371a is provided on the upper surface of the table side pusher head 371 at the end side close to the center of the rotary table 31, and fits into the head positioning hole 11b on this end side. The diameter of the table side head pin 371a is smaller than the diameter of the head positioning hole 11b to allow for some misalignment.

[0049] The table side head protrusion 371b is provided so as to protrude from the upper surface of the table side pusher head 371, and contacts and supports the lower surface of the tray 11. The table side head protrusion 371b is provided on the upper surface of the table side pusher head 371 at the end side close to the outer periphery of the rotary table 31. Since the upper surface of the table side head protrusion 371b is a dome-shaped curved surface, it contacts the lower surface of the tray 11 in a narrow area close to a point. At this time, it is provided so that the tray 11 is horizontal with the table side head pin 371a fitted in one head positioning hole 11b at a position where it does not fit in the other head positioning hole 11b. The table side head protrusion 371b may be replaced with the table side head pin 371a that fits in the other positioning hole 11b.

[0050] The table side lift shafts 372 are a pair of members parallel to the rotation axis 311 of the turntable 31 of the chamber 20, as shown in Fig. 5. The table side lift shafts 372 are provided so as to be movable up and down, airtightly penetrating the bottom surface 20b of the chamber 20. The upper ends of the pair of table side lift shafts 372 are fixed to the lower surface of the end side of the table side pusher head 371 close to the center of the turntable 31. The position of the table side lift shafts 372 is on the center side of the turntable 31 corresponding to the loading / unloading entrance 24, and is outside the area of ​​the rotation locus OR of the transport arm 75 described later (see Fig. 1).

[0051] The driving unit 373 is provided outside the chamber 20 and drives the table-side lifting shaft 372. That is, in this embodiment, one driving unit 372 can raise and lower the pair of table-side lifting shafts 372. The driving unit 373 uses, for example, an air cylinder. Like the table-side lifting shafts 372, the driving unit 373 is also located on the center side of the turntable 31 corresponding to the loading / unloading entrance 24. However, the position of the driving unit 373 is not limited to this. The driving unit 373 may be located in the center of the work 10, and only the table-side lifting shaft 372 may be offset toward the center side of the turntable 31 of the loading / unloading entrance 24.

[0052] When any one of the holding areas of the rotary table 31 stops at a position corresponding to the loading / unloading entrance 24, the pair of openings 31e comes above the pair of table side pusher heads 371. This allows the table side pusher heads 371 and the table side lifting shaft 372 to pass through the rotary table 31 via the openings 31e and move up and down (see FIG. 6).

[0053] [Film forming section] The film forming unit 40 generates plasma and exposes a target 42 made of a film forming material to the plasma. In this manner, the film forming unit 40 deposits particles (hereinafter referred to as sputter particles) constituting the target 42, which are knocked out by colliding ions contained in the plasma with the target 42, on the workpiece 10 to form a film. The film forming unit 40 has a plasma generator P1 that converts a sputter gas G1 introduced between the target 42 made of a film forming material and the rotating table 31 into plasma.

[0054] As shown in FIGS. 2 and 3, the plasma generator P1 is composed of a sputtering source composed of a target 42, a backing plate 43, and an electrode 44, a power supply unit 46, and a sputtering gas introduction unit 49.

[0055] The target 42 is a plate-like member made of a film-forming material that is deposited on the workpiece 10 to form a film. The target 42 is provided at a distance on the transport path L of the workpiece 10 placed on the turntable 31. The surface of the target 42 is held on the top surface 20a of the chamber 20 so as to face the workpiece 10 placed on the turntable 31. For example, three targets 42 are provided. The three targets 42 are provided at positions aligned on the vertices of a triangle in a plan view.

[0056] The backing plate 43 is a support member that holds the targets 42. This backing plate 43 holds each target 42 individually. The electrode 44 is a conductive member for applying power to each target 42 individually from outside the chamber 20, and is electrically connected to the targets 42. The power applied to each target 42 can be changed individually. In addition, the sputtering source is appropriately equipped with a magnet, a cooling mechanism, etc. as necessary.

[0057] The power supply unit 46 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 44. The power supply unit 46 applies power to the target 42 through the electrode 44. The rotary table 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 42 side.

[0058] 2 and 3, the sputtering gas introduction part 49 introduces the sputtering gas G1 into the chamber 20. The sputtering gas introduction part 49 has a supply source of the sputtering gas G1 such as a cylinder (not shown), a pipe 48, and a gas introduction port 47. The pipe 48 is connected to the supply source of the sputtering gas G1, airtightly penetrates the chamber 20, and extends into the interior of the chamber 20, with its end opening as the gas introduction port 47. The sputtering gas introduction part 49 of this embodiment introduces the sputtering gas G1 into the processing space 41 so that the pressure in the processing space 41 is, for example, 0.3 Pa or more and 1.0 Pa or less.

[0059] The gas inlet 47 opens between the turntable 31 and the target 42, and introduces a sputtering gas G1 for film formation into a processing space 41 formed between the turntable 31 and the target 42. A rare gas can be used as the sputtering gas G1, and argon (Ar) gas is preferable. The sputtering gas G1 is a gas that does not contain nitrogen (N), and can be argon (Ar) gas alone.

[0060] In this film forming section 40, when sputtering gas G1 is introduced from sputtering gas inlet 49 and power supply 46 applies a high voltage to target 42 through electrode 44, sputtering gas G1 introduced into processing space 41 formed between turntable 31 and target 42 turns into plasma, generating active species such as ions. The ions in the plasma collide with target 42 and knock out sputter particles.

[0061] The workpiece 10 passes through this processing space 41 while being circulated and transported by the turntable 31. The sputtered particles are deposited on the workpiece 10 as the workpiece 10 passes through the processing space 41, and a film made of the sputtered particles is formed on the workpiece 10. The workpiece 10 is circulated and transported by the turntable 31, and is subjected to a film forming process by repeatedly passing through this processing space 41. The thickness of the film deposited each time it passes through the film forming section 40 depends on the processing rate of the film processing section 50, but can be, for example, a thin film at the 1 to 2 atom level (5 nm or less). By circulating and transporting the workpiece 10 multiple times, the thickness of the film increases, and a film of a predetermined thickness is formed on the workpiece 10.

[0062] In this embodiment, the film forming apparatus 1 includes a plurality of (here, two) film forming units 40, and the film forming units 40 are provided in two compartments in the chamber 20 separated by the separation unit 22. The film forming units 40 selectively deposit the film forming materials to form a film consisting of layers of a plurality of film forming materials. In particular, in this embodiment, sputtering sources corresponding to different types of film forming materials are included, and a film consisting of layers of a plurality of types of film forming materials is formed by selectively depositing the film forming materials. Including sputtering sources corresponding to different types of film forming materials includes a case where the film forming materials of all the film forming units 40 are different, and a case where the film forming materials are common to the plurality of film forming units 40 but different from the others. Selectively depositing film forming materials one by one means that while a film forming unit 40 of any one type of film forming material forms a film, a film forming unit 40 of the other film forming material does not form a film.

[0063] In this embodiment, the film forming material constituting the target 42 of one of the film forming units 40 is a material containing Ga and GaN, and the target 42 serves as a supply source of sputtering particles containing Ga atoms to be deposited on the workpiece 10. The target 42 contains GaN and incomplete GaN lacking nitrogen, that is, Ga atoms lacking bonds with N (nitrogen).

[0064] The film forming material constituting the target 42 of the other film forming unit 40 is a material containing Al, and the target 42 serves as a supply source of sputtering particles containing Al atoms to be deposited on the workpiece 10. Note that as long as the sputtering target 42 is capable of supplying sputtering particles containing Ga atoms and sputtering particles containing Al atoms, it is permissible for the target 42 to contain elements other than Ga, Al, and N (nitrogen).

[0065] In order to distinguish between the two film formation units 40, the film formation unit 40 having a target 42 made of a material containing Ga and GaN is referred to as film formation unit 40A (GaN film formation unit), and the film formation unit 40 having a target 42 made of a material containing Al is referred to as film formation unit 40B (Al film formation unit).

[0066] [Membrane processing section] The film processing unit 50 generates an inductively coupled plasma in a processing space 59 to which a process gas G2 has been introduced, and generates a compound film by chemically reacting chemical species in the plasma with the film deposited on the workpiece 10 by the film forming unit 40. The film processing unit 50 is disposed in a section in the chamber 20 other than the section in which the film forming unit 40 is disposed.

[0067] The process gas G2 introduced contains, for example, oxygen or nitrogen. The process gas G2 may contain an inert gas such as argon gas, in addition to oxygen gas or nitrogen gas. The process gas G2 in this embodiment is a gas containing nitrogen. The film processing unit 50 in this embodiment is a nitriding processing unit that generates an inductively coupled plasma in a processing space 59 into which the process gas G2 containing nitrogen gas is introduced, and generates a nitride film by chemically reacting nitrogen atoms in the plasma with the film deposited on the workpiece 10 by the film forming unit 40.

[0068] As shown in FIG. 2, the film processing section 50 has a plasma generator P2 that is composed of a cylindrical body 51, a window member 52, an antenna 53, an RF power source 54, a matching box 55, and a process gas introduction section 58.

[0069] The cylindrical body 51 is a member that covers the periphery of the processing space 59. The cylindrical body 51 has a cylindrical shape and has an opening as shown in Figures 1 and 2. The cylindrical body 51 is fitted into the top surface 20a of the chamber 20 so that the opening faces away from the turntable 31 and protrudes into the internal space of the chamber 20. The cylindrical body 51 is made of the same material as the turntable 31.

[0070] The cylindrical body 51 separates the processing space 59 in which the nitriding process is performed by the film processing unit 50, thereby preventing the process gas G2 from diffusing into the chamber 20. In other words, the film processing unit 50 has a processing space 59 that is smaller than the chamber 20 and separated from the processing space 41. Since it is only necessary to adjust the pressure in the processing space 59 that is separated into a space smaller than the chamber 20, the pressure can be easily adjusted and the plasma discharge can be stabilized.

[0071] The window member 52 is a flat plate made of a dielectric material such as quartz having a shape similar to the horizontal cross section of the cylindrical body 51. The window member 52 is provided to close the opening of the cylindrical body 51, and separates the inside of the cylindrical body 51 from a processing space 59 into which the process gas G2 containing nitrogen gas in the chamber 20 is introduced. The window member 52 may be made of a dielectric material such as alumina, or a semiconductor such as silicon.

[0072] The processing space 59 is formed between the turntable 31 and the inside of the cylindrical body 51 in the film processing unit 50. The workpiece 10, which is circulated and transported by the turntable 31, passes through this processing space 59 repeatedly, whereby the nitriding process is performed.

[0073] The antenna 53 is a conductor wound into a coil shape, and is disposed in the internal space of the cylindrical body 51 isolated from the processing space 59 in the chamber 20 by the window member 52, and generates an electric field by passing an alternating current through it. It is preferable that the antenna 53 is disposed near the window member 52 so that the electric field generated by the antenna 53 is efficiently introduced into the processing space 59 through the window member 52. An RF power supply 54 that applies a high frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedance on the input side and the output side.

[0074] 2, the process gas introduction part 58 introduces the process gas G2 into the processing space 59. The process gas introduction part 58 has a supply source of the process gas G2 such as a cylinder (not shown), a pipe 57, and a gas introduction port 56. The pipe 57 is connected to the supply source of the process gas G2, penetrates the chamber 20 while airtightly sealing it, and extends into the interior of the chamber 20, with its end opening as the gas introduction port 56.

[0075] The gas inlet 56 opens into a processing space 59 between the window member 52 and the rotary table 31, and introduces a process gas G2.

[0076] In the film processing section 50, a high-frequency voltage is applied to the antenna 53 from the RF power supply 54. This causes a high-frequency current to flow through the antenna 53, generating an electric field due to electromagnetic induction. The electric field is generated in the processing space 59 through the window member 52, and an inductively coupled plasma is generated in the process gas G2. At this time, chemical species of nitrogen containing nitrogen atoms are generated, and by colliding with the film on the workpiece 10, they bond with the atoms that make up the film. As a result, the film on the workpiece is nitrided, and a nitride film is formed as a compound film.

[0077] The reason why the film forming unit 40A uses a material containing GaN as the target 42 and further provides a film processing unit 50 that performs nitridation is as follows: Ga has a low melting point and is in a liquid state at room temperature and normal pressure, so it is necessary to make it contain nitrogen (N) in order to make it a solid target 42. For this reason, it is possible to simply increase the nitrogen content of the target 42 and form a film by sputtering the target 42 alone.

[0078] Here, in order to improve the deposition rate, DC discharge sputtering is more preferable than RF discharge. However, if the target 42 contains a large amount of nitrogen, the surface becomes an insulator. In the case of the target 42 with an insulator surface, DC discharge may not occur.

[0079] That is, there is a limit to the amount of nitrogen that can be contained in the GaN target 42, and the nitridation of Ga in the target 42 remains insufficient. That is, the target 42 containing GaN contains Ga atoms that are deficient in bonding with N (nitrogen) atoms.

[0080] If the nitrogen content is low and there are nitrogen defects in the formed GaN film, the crystallinity of the film will be poor and the flatness will be impaired, so it is necessary to compensate for the lack of nitrogen. Therefore, it is possible to add nitrogen gas to the sputtering gas G1 introduced into the film forming unit 40 and perform sputtering, but there is a risk that the surface of the target 42 will be nitrided and become an insulator. Therefore, the film forming unit 40A cannot add a sufficient amount of nitrogen gas to the sputtering gas G1 to compensate for the lack of nitrogen.

[0081] Therefore, in order to compensate for the lack of nitrogen in the GaN film formed by the film forming unit 40A, after the film is formed by the film forming unit 40A, nitridation is further performed by the film processing unit 50. As a result of such nitridation treatment during film formation, the nitrogen content of the film on the workpiece 10 can be increased, and a GaN film without nitrogen defects can be formed.

[0082] [Surface treatment section] The surface treatment section 60 treats the surface of the workpiece 10 being circulated and transported by the turntable 31 and the surface of the film deposited by the film deposition section 40. The treatment performed by the surface treatment section 60 is removal of an oxide film from the surface of the workpiece 10 before a film is deposited by the film deposition section 40, or flattening the surface of a film being formed on the workpiece.

[0083] The film in the process of being formed on the workpiece 10 is a film until it reaches a film of a desired thickness to be formed on the workpiece 10, specifically, a compound film on the workpiece 10 that has been processed by the film processing unit 50, or a film on the workpiece 10 that has been formed by the film forming unit 40. In other words, the conveying unit 30 circulates and conveys the workpiece 10 so that the workpiece 10 passes through the film forming unit 40, the film processing unit 50, and the surface processing unit 60. As a result, the surface processing unit 60 irradiates ions onto the compound film on the workpiece 10 that has been processed by the film processing unit 50. Alternatively, when the film forming unit 40, the surface processing unit 60, and the film processing unit 50 are arranged in this order in the conveying direction by the conveying unit 30 of each unit 40, 50, and 60, the conveying unit 30 circulates and conveys the workpiece 10 so that the workpiece 10 passes through the film forming unit 40, the surface processing unit 60, and the film processing unit 50, so that the surface processing unit 60 irradiates ions onto the film on the workpiece 10 that has been formed by the film forming unit 40.

[0084] The surface treatment section 60 is disposed in a section of the chamber 20 other than the sections in which the film formation section 40 and the film treatment section 50 are disposed. The surface treatment section 60 includes a plasma generator P3 that is configured with a cylindrical electrode 61, a shield 62, a process gas inlet section 65, and an RF power source 66.

[0085] 1 and 3, the surface treatment section 60 includes a box-shaped cylindrical electrode 61 provided from the upper part of the chamber 20 to the inside. The shape of the cylindrical electrode 61 is not particularly limited, but in this embodiment, it is approximately fan-shaped in a plan view. The cylindrical electrode 61 has an opening 61a at its bottom. The outer edge of the opening 61a, i.e., the lower end of the cylindrical electrode 61, faces the upper surface of the workpiece 10 on the rotating table 31 with a small gap therebetween.

[0086] The cylindrical electrode 61 is in the shape of a square cylinder, has an opening 61a at one end, and is closed at the other end. The cylindrical electrode 61 is attached to an opening 21a provided in the ceiling of the chamber 20 via an insulating member 61c so that the end having the opening 61a faces the turntable 31. The side wall of the cylindrical electrode 61 extends into the chamber 20.

[0087] An outwardly projecting flange 61b is provided on the end of the cylindrical electrode 61 opposite the opening 61a. An insulating member 61c is fixed between the flange 61b and the periphery of the opening 21a of the chamber 20 to keep the inside of the chamber 20 airtight. The insulating member 61c may be made of any material as long as it has insulating properties, and may be made of, for example, PTFE (polytetrafluoroethylene) or other material.

[0088] The opening 61a of the cylindrical electrode 61 is disposed at a position facing the transport path L of the turntable 31. The turntable 31, which serves as the transport unit 30, transports the tray 11 carrying the workpieces 10 and passes through a position facing the opening 61a. Note that the opening 61a of the cylindrical electrode 61 is larger than the size of the tray 11 in the radial direction of the turntable 31.

[0089] As described above, the cylindrical electrode 61 penetrates the opening 21a of the chamber 20, and a portion of it is exposed to the outside of the chamber 20. The portion of the cylindrical electrode 61 exposed to the outside of the chamber 20 is covered by a housing 61d, as shown in Fig. 3. The housing 61d keeps the space inside the chamber 20 airtight. The portion of the cylindrical electrode 61 located inside the chamber 20, i.e., the periphery of the side wall, is covered by a shield 62.

[0090] The shield 62 is a sector-shaped rectangular cylinder coaxial with the cylindrical electrode 61 and is larger than the cylindrical electrode 61. The shield 62 is connected to the chamber 20. Specifically, the shield 62 stands upright from the edge of the opening 21a of the chamber 20, and the end portion extending toward the inside of the chamber 20 is located at the same height as the opening 61a of the cylindrical electrode 61. The shield 62 acts as a cathode like the chamber 20, so it is preferable that the shield 62 is made of a conductive metal member with low electrical resistance. The shield 62 may be molded integrally with the chamber 20, or may be attached to the chamber 20 using a fixing metal fitting or the like.

[0091] The shield 62 is provided to stably generate plasma in the cylindrical electrode 61. Each side wall of the shield 62 is provided to extend approximately parallel to each side wall of the cylindrical electrode 61 with a predetermined gap therebetween. If the gap is too large, the capacitance becomes small and the plasma generated in the cylindrical electrode 61 enters the gap, so it is desirable that the gap is as small as possible. However, if the gap is too small, the capacitance between the cylindrical electrode 61 and the shield 62 becomes large, which is not preferable. The size of the gap should be appropriately set according to the capacitance required for generating plasma. Note that FIG. 3 shows only two side wall surfaces extending in the radial direction of the shield 62 and the cylindrical electrode 61, but a gap of the same size as the side wall surfaces in the radial direction is provided between the two side wall surfaces extending in the circumferential direction of the shield 62 and the cylindrical electrode 61.

[0092] Further, a process gas introduction section 65 is connected to the cylindrical electrode 61. In addition to piping, the process gas introduction section 65 has a gas supply source of the process gas G3, a pump, a valve, etc. (not shown). The process gas G3 is introduced into the cylindrical electrode 61 by the process gas introduction section 65. The process gas G3 can be appropriately changed depending on the purpose of the process. For example, the process gas G3 may contain an inert gas such as argon gas, oxygen gas, or nitrogen gas, or may contain oxygen gas or nitrogen gas in addition to argon gas.

[0093] An RF power supply 66 for applying a high frequency voltage is connected to the cylindrical electrode 61. A matching box 67, which is a matching circuit, is connected in series to the output side of the RF power supply 66. The RF power supply 66 is also connected to the chamber 20. When a voltage is applied from the RF power supply 66, the cylindrical electrode 61 acts as an anode, and the chamber 20, the shield 62, the turntable 31, and the tray 11 act as cathodes. In other words, they function as electrodes for reverse sputtering. For this reason, as described above, the turntable 31 and the tray 11 are conductive and are in contact with each other so as to be electrically connected.

[0094] The matching box 67 stabilizes the plasma discharge by matching the impedance on the input side and the output side. The chamber 20 and the turntable 31 are grounded. The shield 62 connected to the chamber 20 is also grounded. The RF power supply 66 and the process gas inlet 65 are both connected to the cylindrical electrode 61 via a through hole provided in the housing 61d.

[0095] Argon gas, which is the process gas G3, is introduced into the cylindrical electrode 61 from the process gas inlet 65, and when a high frequency voltage is applied to the cylindrical electrode 61 from the RF power source 66, a capacitively coupled plasma is generated, and the argon gas is converted into plasma, generating electrons, ions, radicals, etc. The ions in the generated plasma are irradiated onto the film in the process of being formed on the workpiece 10.

[0096] That is, the surface treatment section 60 has a cylindrical electrode 61 with an opening 61a at one end and into which a process gas G3 is introduced, and an RF power source 66 that applies a high frequency voltage to the cylindrical electrode 61, and the conveying section 30 conveys the workpiece 10 directly below the opening 61a and passes it through, thereby attracting ions into the film formed on the workpiece 10 and performing ion irradiation. In the surface treatment section 60, a negative bias voltage is applied to the tray 11 on which the workpiece 10 is placed and the rotating table 31 in order to attract ions into the film formed on the workpiece 10.

[0097] By using a cylindrical electrode 61 such as the surface treatment section 60, it is possible to attract ions into the formed thin film by applying a desired negative bias voltage to the tray 11 and turntable 31 on which the workpiece 10 is placed, while keeping these members at earth potential, without applying a high-frequency voltage to the tray 11 and turntable 31. This makes it unnecessary to add a structure for applying a high-frequency voltage to the tray 11 and turntable 31, or to consider the area ratio of the anode electrode to the area of ​​other members surrounding the cathode electrode in order to obtain a desired bias voltage, making it easier to design the device.

[0098] Therefore, even when film formation and ion irradiation are repeated while moving the workpiece 10 in order to flatten a film in the process of being formed on the workpiece 10, ions can be attracted to the film formed on the workpiece 10 with a simple structure.

[0099] The cylindrical electrode 61 separates the processing space 64 in the chamber 20 where the surface treatment is performed by the surface treatment unit 60. The cylindrical electrode 61 can prevent the process gas G3 from diffusing into the chamber 20. That is, the surface treatment unit 60 has a processing space 64 that is smaller than the chamber 20 and is separated from the processing spaces 41 and 59. Since it is only necessary to adjust the pressure in the processing space 64, which is separated into a space smaller than the chamber 20, the pressure can be easily adjusted and the plasma discharge can be stabilized. The order and number of the film forming unit 40, the film treatment unit 50, and the surface treatment unit 60 are not limited to a specific one. It is only necessary that the desired processing can be performed on the workpiece 10 that is circulated and transported.

[0100] In this way, the film processing unit 50 has a function of generating a compound film by converting nitrogen gas into plasma to generate chemical species containing nitrogen atoms, and causing a chemical reaction with the film formed on the workpiece 10. By utilizing inductively coupled plasma with high plasma density, the film processing unit 50 can generate a compound film by efficiently chemically reacting the chemical species in the plasma with the film formed on the workpiece 10 by the film forming unit 40.

[0101] The surface treatment section 60 has a function of applying a negative bias voltage to the tray 11 on which the workpiece 10 is placed and the rotating table 31, thereby attracting ions into the film formed on the workpiece 10 and flattening the thin film. In the surface treatment section 60, by utilizing the cylindrical electrode 61, it is possible to easily attract ions into the film formed on the workpiece 10 and flatten it.

[0102] [Transfer section] The transfer unit 70 is a device that loads and unloads the workpiece 10 into and from the chamber 20 through the load lock chamber LL, as shown in Fig. 5. The transfer unit 70 includes a load lock chamber 71, a cover 72, a valve body 73, a load lock side pusher 74, and a transfer arm 75, as shown in Figs.

[0103] (Load lock chamber) The load lock chamber 71 is a container connected to the chamber 20 and capable of creating a vacuum inside. The load lock chamber 71 is connected to the load / unload port 24 of the chamber 20 so as to air-tightly seal the load / unload port 24. The inside of the load lock chamber 71 communicates with the inside of the chamber 20 via the load / unload port 24, so that the same air pressure as inside the chamber 20 is maintained.

[0104] An opening 711 is provided in the ceiling of the load lock chamber 71. The opening 711 has a shape similar to that of the tray 11, and is large enough to allow the tray 11 on which the workpieces 10 are placed to be inserted and removed between the outside and the inside of the load lock chamber 71 (see FIGS. 1, 16, and 17).

[0105] (Lid) The lid 72 is a member that seals the opening 711. The lid 72 is provided on the top of the load lock chamber 71 and has a rectangular parallelepiped shape that covers the opening 711. The lid 72 is provided so as to be able to open and close the opening 711 by rotating about a hinge portion 72a provided on the chamber 20 side as a fulcrum (see FIG. 13). A sealing member 72b such as an O-ring is provided on the surface of the lid 72 that comes into contact with and separates from the load lock chamber 71, and is configured to be able to air-tightly seal the opening 711 by closing it. A frame 712 is fixed to the bottom of the opening 711. The frame 712 has a hole 712a that is the same shape and size as the opening 711.

[0106] (Valve body) The valve body 73 is a member that seals the hole 712a of the frame body 712. The valve body 73 is provided inside the load lock chamber 71 and is a plate body that is large enough to cover the hole 712a. As shown in FIG. 6, the valve body 73 of this embodiment has a shape similar to that of the hole 712a and the opening 711 (see FIG. 1 and FIG. 5). The valve body 73 is provided so as to be able to approach and separate from the frame body 712 by moving up and down. A sealing member 73a such as an O-ring is provided on the surface of the valve body 73 that approaches and separates from the frame body 712, and is configured to be able to airtightly seal by closing the hole 712a. The sealing member 73a has a shape similar to that of the valve body 73 in a plan view. As shown in FIG. 5, the cover body 72 seals the opening 711 of the load lock chamber 71, and the valve body 73 seals the hole 712a of the frame body 712, thereby forming a load lock chamber LL. The load lock chamber LL is switched between a vacuum state in which the pressure is reduced and a state in which the pressure is broken and the chamber is open to the atmosphere by an exhaust device including a vacuum pump and vent means including a valve (not shown).

[0107] A valve element lifting shaft 731 and a drive unit 732 are connected to the valve element 73. The valve element lifting shaft 731 is a member parallel to the rotation axis 311 of the turntable 31 in the chamber 20 (see FIG. 5). The upper end of the valve element lifting shaft 731 is connected to the center of the bottom surface of the valve element 73. The valve element lifting shaft 731 is provided so as to be able to lift and lower, airtightly penetrating the bottom surface of the load lock chamber 71. The drive unit 732 is provided outside the load lock chamber 71, and drives the valve element lifting shaft 731. The drive unit 732 uses, for example, an air cylinder.

[0108] (Load lock side pusher) The load lock side pusher 74 is a pair of members that holds and releases the workpiece 10 with respect to a transfer arm 75 described later. The load lock side pusher 74 is provided below an opening 711 of the load lock chamber 71. The load lock side pusher 74 has a load lock side pusher head 741 and a load lock side lift shaft 742.

[0109] The load lock side pusher head 741 is a member on which the workpiece 10 is placed. The pair of load lock side pusher heads 741 are elongated plate bodies provided at the same interval in the same direction as the pair of table side pusher heads 371. The upper surfaces of the pair of load lock side pusher heads 741 are horizontal surfaces at the same height. The interval between the pair of load lock side pusher heads 741 is larger than the width of the transport arm 75 described later. Therefore, when the load lock side pusher 74 moves up and down, the load lock side pusher head 741 does not interfere with the transport arm 75. In other words, the load lock side pusher head 741 is similar to the table side pusher head 371, including a load lock side head pin 741a and a load lock side head protrusion 741b described later, and is arranged symmetrically.

[0110] The load lock side pusher head 741 is provided with a load lock side head pin 741a and a load lock side head protrusion 741b as shown in Fig. 6. The load lock side head pin 741a fits into a head positioning hole 11b of the tray 11 as shown in Figs. 8(A) and (B). That is, the load lock side head pin 741a is provided on the upper surface of the load lock side pusher head 741 at the end side far from the rotary table 31, and fits into the head positioning hole 11b on this end side. The diameter of the load lock side head pin 741a is smaller than the diameter of the head positioning hole 11b to allow for some misalignment.

[0111] The load lock side head protrusion 741b is provided so as to protrude from the upper surface of the load lock side pusher head 741, and contacts and supports the lower surface of the tray 11. The load lock side head protrusion 741b is provided on the upper surface of the load lock side pusher head 741 at the end side close to the outer periphery of the rotary table 31. Since the upper surface of the load lock side head protrusion 741b is a dome-shaped curved surface, it contacts the lower surface of the tray 11 in a narrow area close to a point. At this time, it is provided so that the tray 11 is horizontal with the load lock side head pin 741a fitted in one head positioning hole 11b at a position where it does not fit in the other head positioning hole 11b. The load lock side head protrusion 741b may be replaced with the load lock side head pin 741a fitted in the other positioning hole 11b.

[0112] 5 and 6, the loadlock side lift shafts 742 are a pair of members parallel to the rotation axis 311 of the turntable 31 of the chamber 20. The lower ends of the loadlock side lift shafts 742 are fixed to the valve element 73. The upper ends of the pair of loadlock side lift shafts 742 are each fixed to the lower surface of the end side of the loadlock side pusher head 741 farther from the turntable 31. In other words, the loadlock side lift shafts 742 are installed offset from the center of the valve element 73. The drive unit 732 that drives the valve element 73 drives the loadlock side lift shafts 742 together with the valve element 73. The length (height) of the load lock side lifting shaft 742 is set so that a gap is formed between the valve body 73 and the load lock side pusher head 741 to allow the transport arm 75 to pass through, as described below, and so that when the lid body 72 and the valve body 73 seal the load lock chamber LL, the load lock side pusher head 741 and the workpiece 10 are accommodated in the load lock chamber LL without coming into contact with the lid body 72.

[0113] (Transport arm) The transport arm 75 receives the workpiece 10 from the load lock side pusher 74 and rotates to transfer the workpiece 10 to the table side pusher 37. Similarly, the transport arm 75 receives the workpiece 10 from the table side pusher 37 and transfers the workpiece 10 to the load lock side pusher 74. As shown in Fig. 1, the transport arm 75 is provided between the table side pusher 37 in the chamber 20 and the load lock side pusher 74 in the load lock chamber 71. As shown in Fig. 6, the transport arm 75 is a horizontal rectangular plate.

[0114] The transfer arm 75 is provided to be rotatable about an arm shaft 751 that is parallel to the rotation axis 311 of the turntable 31. As shown in Fig. 5, the arm shaft 751 airtightly penetrates the lower surface of the load lock chamber 71 and is rotated by a drive unit 752. The drive unit 752 is a motor that is disposed outside the load lock chamber 71. Note that the drive unit 752 may be a motor that rotates the arm shaft 751 via a belt.

[0115] 1, the load lock side lift shaft 742 and the table side lift shaft 372 are provided outside the area of ​​the rotation locus OR of the transport arm 75. The rotation locus OR here refers to the locus traced by the outermost edge of the transport arm 75, which is the farthest from the center of rotation.

[0116] The load lock side pusher head 741 and the valve body 73 are moved by the drive unit 732 among three height positions: a sealing position, a delivery position, and a retracted position. The sealing position is a position where the valve body 73 seals the hole 712a of the frame body 712 to form a load lock chamber LL (see FIG. 5 and FIG. 13(B)). The delivery position is a position where the load lock side pusher head 741 rises to a position higher than the transport arm 75 to receive and deliver the workpiece 10 between the load lock side pusher head 741 and the transport worm 75 (see FIG. 14(A)). The position where the workpiece 10 is actually received or delivered is halfway between the load lock side pusher head 371 rising or descending. Since the load lock side lift shaft 742 is outside the region of the rotation locus OR, at the transfer position, a space (height) in which the transport arm 75 can rotate is created below the load lock side pusher head 741, that is, between the load lock side pusher head 741 and the valve body 73. Therefore, at the transfer position, the transport arm 75 can rotate while overhanging between the load lock side pusher head 741 and the valve body 73.

[0117] In addition, the table side pusher head 371 is moved between two height positions, an elevated position and a retreated position, by the drive unit 373. The elevated position is a position where the table side pusher head 371 is elevated to a position higher than the transport arm 75 in order to receive and transfer the workpiece 10 between the transport worm 75 and the table side pusher head 371 (see FIG. 15(A)). The position where the workpiece 10 is actually received or transferred is during the table side pusher head 371's elevation or descent. Since the table side lift shaft 372 is outside the area of ​​the rotation trajectory OR, at the elevated position, a space (height) is created below the table side pusher head 371, that is, between the table side pusher head 372 and the holding area HA of the rotating table 32, allowing the transport arm 75 to rotate. Therefore, at the elevated position, the transport arm 75 can rotate overhanging between the table side pusher head 371 and the rotating table 31. The retracted position is a position where the table side pusher head 371 retracts below the transport arm 75 and the turntable 31 (see FIGS. 14 and 15(C)). In other words, the retracted position is a position lower than the turntable 31 and does not interfere with the rotation of the turntable 31.

[0118] When the load lock side pusher head 741 moves together with the valve body 73 between the sealing position and the delivery position, and when the table side pusher head 371 moves between the raised position and the retracted position, the transport arm 75 retracts in a direction parallel to the tangent to the outer periphery of the rotary table 31 so as not to interfere with them (see Figs. 13(A), 15(B), (C), and 16(A)-(C)). The longitudinal length of the transport arm 75 is such that, when positioned as shown in Fig. 6, both ends are positioned to allow the transfer and receipt of the workpiece 10.

[0119] As shown in FIG. 6, arm-side pins 75a and arm-side protrusions 75b are provided near both ends of the transport arm 75. The arm-side pins 75a are provided on the upper surfaces of the arms protruding from a pair of long sides near both ends of the transport arm 75. That is, a total of four arm-side pins 75a are provided, two on one end side of the transport arm 75 and two on the other end side. The arm-side pins 75a are fitted into the arm positioning holes 11c of the tray 11 as shown in FIG. 9(A) and (B). The diameter of the arm-side pins 75a is smaller than the diameter of the arm positioning holes 11c so as to allow for some misalignment. The arm-side pins 75a and the positioning pins 31d of the rotating table 31 have the same spacing and positional relationship between the pins. For this reason, a common arm positioning hole 11c can be used, which can reduce the number of holes to be formed and can reduce the variation in accuracy for the holes. The number and positions of the arm-side pins 75a are not limited to those exemplified above. However, in order to regulate the θ direction, it is preferable to have two or more.

[0120] The arm-side protrusions 75b are provided so as to protrude from the upper surface of the transport arm 75, and contact and support the lower surface of the tray 11. Four arm-side protrusions 75b are provided on the upper surface of each of the transport arm 75 near both ends. In other words, a total of eight arm-side protrusions 75b are provided, four on one end side of the transport arm 75 and four on the other end side. Since the upper surface of the arm-side protrusions 75b is a dome-shaped curved surface, the arm-side protrusions 75b contact the lower surface of the tray 11 in a narrow area close to a point. The height of the arm-side protrusions 75b is a dimension that prevents the arm-side pins 75a from colliding with the ceiling of the arm positioning hole 11c. The number and positions of the arm-side protrusions 75b are not limited to those exemplified above.

[0121] [Control device] The control device 90 controls various elements constituting the film forming apparatus 1, such as the exhaust unit 23, the sputtering gas introduction unit 49, the process gas introduction units 58, 65, the power supply unit 46, the RF power supplies 54, 66, the motor 32, and the transport unit 70. The control device 90 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program describing the control contents.

[0122] For example, the control device 90 controls the raising and lowering of the table side pusher head 371 by the drive unit 373, the raising and lowering of the valve body 73 by the drive unit 732, and the rotation of the transport arm 75 by the drive unit 752, thereby transferring the work 10 between the load lock chamber 71 and the chamber 20.

[0123] Further, the control device 90 controls the initial exhaust pressure of the film forming apparatus 1, the power applied to the target 42, the antenna 53, and the cylindrical electrode 61, the flow rates of the sputtering gas G1 and the process gases G2 and G3, the introduction time and exhaust time, the film forming time, the surface treatment time, the heating temperature of the heating part 34, the heating time, the rotation speed of the motor 32, the cooling temperature, the cooling time, etc. This allows the control device 90 to handle a wide variety of film forming specifications.

[0124] Furthermore, the control device 90 controls the heating temperature of the heating unit 34. To this end, the control device 90 has a temperature sensor, a temperature regulator, and an operation unit. The temperature sensor detects the temperature of the heating unit 34 and sends a signal of the detected temperature value to the temperature regulator. The temperature regulator compares the detected temperature value with a preset target temperature value and sends an operation signal to the operation unit. The operation unit applies or stops applying power to the ring electrode 351a via the brush electrode 352a based on the operation signal, thereby raising or lowering the temperature of the heating unit 34. In this way, the control device 90 controls the temperature of the heating unit 34 by performing feedback control. The temperature sensor can be, for example, a thermocouple that is in contact with the heating unit 34 and is provided so as to be able to detect the temperature. The operation unit can be, for example, a voltage regulator such as an SCR (Silicon Controlled Rectifier).

[0125] The heating temperature of the heating unit 34 is controlled so that the temperature of the workpiece 10 rises stepwise to the target temperature. In other words, the heating unit 34 is provided so that the temperature of the workpiece 10 can be adjusted stepwise. "Stepwise" is synonymous with "gradually," "gently," and "not suddenly," and means that the time from the start of heating to the target temperature is long enough to prevent damage to the workpiece 10. The control device 90 can also adjust the heating temperature of the heating unit 34 according to the type of workpiece 10. The heating temperatures of the multiple heating units 34 can be individually adjusted. This allows different types of workpieces 10, such as sapphire substrates and silicon wafers, to be placed on the turntable 31 and processed simultaneously in parallel.

[0126] [Operation] Next, the operation of the film forming apparatus 1 controlled by the control device 90 will be described with reference to Figs. 1 to 9 as well as Figs. 10 to 17. Note that a film forming method for forming a film by the film forming apparatus 1, as described below, is also one aspect of the present invention. Fig. 10 is a flow chart of a film forming process by the film forming apparatus 1 of this embodiment, and Fig. 11 is a flow chart showing a procedure for carrying in a workpiece 10 in the film forming apparatus 1 of this embodiment.

[0127] Figures 13 to 17 are explanatory views showing the loading operation. Figures 13 to 15 are vertical cross-sectional views showing the inside of the load lock chamber 71 and part of the chamber 20, and Figures 16 and 17 are plan views showing part of the load lock chamber 71 and part of the chamber 20, but some members are not shown for ease of understanding.

[0128] Figure 13 shows the loading of the workpiece 10 into the load-lock chamber LL, and Figure 13(A) shows the state in which the lid 72 is open and the tray 11 is placed on the load-lock side pusher head 741. At this time, the valve body 73 rises to close the opening of the frame body 712. Figure 13(B) shows the state in which the lid body 72 is closed and a sealed load-lock chamber LL is formed. At this time, the pressure inside the load-lock chamber LL is made the same as the pressure inside the transfer section 70 by an exhaust device not shown. Figure 13(C) shows the state in which the valve body 73 falls and the load-lock side pusher head 741 moves from the sealing position to the delivery position.

[0129] Figure 14 shows the transfer of the tray 11 to the transport arm 75 and the loading into the chamber 20, with Figure 14(A) showing the state in which the transport arm 75 is inserted between the load lock side pusher head 741, which is in the transfer position, and the valve body 73, Figure 14(B) showing the state in which the load lock side pusher head 741 has been lowered to the retracted position and the tray 11 has been transferred to the transport arm 75, and Figure 14(C) showing the state in which the transport arm 75 has rotated and the tray 11 has come onto the rotary table 31.

[0130] Figure 15 shows the transfer of tray 11 from transport arm 75 to rotating table 31, with Figure 15(A) showing the state in which table side pusher head 371 has reached the raised position and received tray 11 from transport arm 75, Figure 15(B) showing the state in which transport arm 75 has retreated from below table side pusher head 371, and Figure 15(C) showing the state in which table side pusher head 371 has reached a retreat position below the rotating table 31.

[0131] Fig. 16(A) shows a state before the tray 11 is loaded and the lid 72 of the transfer section 70 is closed, Fig. 16(B) shows a state before the tray 11 is loaded and the lid 72 of the transfer section 70 is open, and Fig. 16(C) shows a state in which the tray 11 is mounted on the load lock side pusher head 741. Fig. 17(A) shows a state in which the lid 72 is closed after the tray 11 is loaded, Fig. 17(B) shows a state in which the transport arm 75 has rotated and moved to below the load lock side pusher head 741, and Fig. 17(C) shows a state in which the transport arm 75 has rotated and loaded the tray 11 into the chamber 20.

[0132] This film formation process is a process in which an AlN film and a GaN film are alternately laminated on a workpiece 10, and a GaN layer is further formed. Silicon wafers and sapphire substrates have different crystal lattices from GaN, so if a GaN film is directly formed on them, there is a problem that the crystallinity of the GaN decreases. In order to eliminate such a mismatch of crystal lattices, a buffer layer is formed by alternately laminating an AlN film and a GaN film, and a GaN layer is formed on this buffer layer. The film formation apparatus 1 can be used, for example, when forming a buffer layer and a GaN layer on a silicon wafer in the manufacture of a horizontal MOSFET or LED.

[0133] For example, Fig. 12(A) shows the layered structure of an LED, in which a buffer layer 10a, a GaN layer 10b including an n-channel, a buffer layer 10a, a GaN layer 10c including a p-channel, a light-emitting layer 10d, and a transparent conductive film 10e are layered on a silicon workpiece 10. The transparent conductive film 10e is an ITO (Indium Tin Oxide) film. Note that electrodes are not shown. Fig. 12(B) shows the buffer layer 10a.

[0134] First, the inside of the chamber 20 is evacuated from the exhaust port 21 by the exhaust unit 23, and is constantly depressurized to a predetermined pressure. In addition, the heating unit 34 starts heating along with the exhaust. At the same time, the turntable 31 starts rotating. The inside of the chamber 20 is heated by radiation from the rotating heating unit 34 (step S101). Heating along with the exhaust promotes the desorption of residual gases such as water molecules and oxygen molecules in the chamber 20. This makes it difficult for the residual gases to be mixed in as impurities during film formation, improving the crystallinity of the film. After a gas analyzer such as Q-Mass detects that the oxygen concentration in the chamber 20 has fallen below a predetermined value, the rotation of the turntable 31 is stopped.

[0135] Next, the tray 11 carrying the workpieces 10 is carried into the load lock chamber 71 of the transfer section 70 (step S102). This operation will be described with reference to the flow chart of FIG. 11. When the tray 11 is carried into the load lock chamber 71, the valve body 73 is raised to a position where it contacts the frame body 712, as shown in FIG. 5, and the hole 712a is sealed. The transfer arm 75 is retracted from the valve body 73 and the load lock side pusher head 741, and rotated to a position where it does not interfere with the raising and lowering of these. The rotary table 31 moves the empty holding area HA to a position corresponding to the carry-in / out entrance 24.

[0136] First, from a state in which the lid body 72 is closed as shown in Figures 5 and 16(A), an operator rotates the lid body 72 upward to open the opening 711 as shown in Figures 13(A) and 16(B) (step 201). Then, as shown in Figures 13(B) and 16(C), an operator mounts the tray 11 on the load lock side pusher head 741 so that the load lock side head pins 741a fit into the head positioning holes 11b (step S202). As a result, the tray 11 is positioned and supported by the load lock side head pins 741a, and the lower surface is supported by the load lock side head protrusions 741b.

[0137] As shown in Fig. 13(B) and Fig. 17(A), the operator rotates the cover 72 downward to close the opening 711 (step S203). Then, the exhaust means reduces the pressure in the load lock chamber LL to the same pressure as that in the chamber 20 (step S204). Thereafter, as shown in Fig. 13(C), the valve body 73 descends, and the load lock side pusher head 741 descends to the delivery position (step S205).

[0138] As shown in FIG. 14(A) and FIG. 17(B), with the load lock side pusher head 741 positioned at the delivery position, the transport arm 75 rotates and one end comes between the load lock side pusher head 741 and the valve body 73 (step S206). At this time, the arm positioning hole 11c of the tray 11 and the arm side pin 75a of the transport arm 75 are in a corresponding position. As shown in FIG. 14(B), the valve body 73 further descends, so that the load lock side pusher head 741 descends to the retreat position (step S207). Then, the tray 11 is separated from the load lock side pusher head 741 and is delivered to the transport arm 75. At this time, the arm side pin 75a of the transport arm 75 fits into the arm positioning hole 11c of the tray 11, and the lower surface of the tray 11 is supported by the arm side protrusion 75b.

[0139] As shown in FIG. 14(C) and FIG. 17(C), the transport arm 75 rotates, and the end on which the tray 11 is mounted comes above the table side pusher head 371 (step S208). At this time, the table side pusher head 371 is positioned at the height of the retracted position below the table 31 and retracted. Then, the head pin 371a of the table side pusher head 371 and the head positioning hole 11b of the tray 11 are in a corresponding position. As shown in FIG. 15(A), the table side pusher head 371 rises to be positioned at the raised position for receiving the tray 11, and the tray 11 is released from the load lock side pusher head 741 and handed over to the table side pusher head 371 (S209). Then, the table side head pin 371a of the table side pusher head 371 fits into the head positioning hole 11b of the tray 11, and the lower surface of the tray 11 is supported by the table side head protrusion 371b.

[0140] As shown in FIG. 15(B), the transport arm 75 rotates and retreats from below the table side pusher head 371 (step S210). That is, the retreat of the transport arm 75 allows the table side pusher head 371 to descend. At this time, the arm positioning hole 11c of the tray 11 on the table side pusher head 371 is at a position corresponding to the positioning pin 31d of the rotary table 31. As shown in FIG. 15(C), the table side pusher head 371 descends, and the tray 11 is released from the table side pusher head 371 and transferred to the holding hole 31c of the rotary table 31 (step S211). At this time, the positioning pin 31d of the rotary table 31 fits into the arm positioning hole 11c of the tray 11.

[0141] The turntable 31 sequentially moves the empty holding areas HA to the loading / unloading entrance 24. Then, the trays 11 are sequentially placed in the empty holding areas HA according to the flow of operations described above. As a result, each holding area HA holds the tray 11 individually. In this way, the trays 11 carrying the workpieces 10 are placed in all holding areas HA on the turntable 31. This completes the loading of the workpieces 10 into the chamber 20.

[0142] 10, the turntable 31 starts rotating again, the workpieces 10 are heated by the heating unit 34, and the oxide film on the surface of the workpieces 10 is removed by the surface treatment unit 60 (step S103). At this time, the absorbing member 12 is heated by the heating unit 34, and the absorbing member 12 emits electromagnetic waves with a wavelength that is easily absorbed by the workpieces 10, facilitating the heating of the workpieces 10 on each tray 11.

[0143] Furthermore, as the turntable 31 rotates, the workpiece 10 passes under the surface treatment section 60. In the surface treatment section 60, a process gas G3 is introduced into a cylindrical electrode 61 from a process gas inlet 65, and a high-frequency voltage is applied to the cylindrical electrode 61 from an RF power source 66. The application of the high-frequency voltage turns the process gas G3 into plasma, and ions in the plasma collide with the surface of the workpiece 10 passing under the opening 61a, thereby removing the oxide film from the surface of the workpiece 10.

[0144] The workpiece 10 passes repeatedly under the surface treatment section 60, and is treated by the surface treatment section 60 for a predetermined time required for removing an oxide film previously determined by an experiment or the like, and then a buffer layer is formed by alternately repeating the formation of an AlN film by the film formation section 40B and the film treatment section 50 and the formation of a GaN film by the film formation section 40A and the film treatment section 50. As described above, a target 42 made of a material containing Ga and GaN is attached to the film formation section 40A, and a target 42 made of a material containing Al is attached to the film formation section 40B.

[0145] First, an AlN film is formed on the workpiece 10 by the film forming unit 40B and the film processing unit 50 (step S104). That is, the sputtering gas introduction unit 49 supplies a sputtering gas G1 into the processing space 41 of the film forming unit 40B through the gas introduction port 47. The sputtering gas G1 is supplied to the periphery of the target 42 made of Al. The power supply unit 46 applies a voltage to the target 42 of the film forming unit 40B. This causes the sputtering gas G1 to become plasma. Ions generated by the plasma collide with the target 42 and knock out sputter particles containing Al atoms. The workpiece 10 passes repeatedly under the film forming unit 40B as the turntable 31 rotates.

[0146] A thin film is formed on the surface of the workpiece 10 by deposition of sputtered particles containing Al atoms when the workpiece 10 passes through the deposition section 40B. In this embodiment, a film thickness that can contain 1 to 2 Al atoms in the thickness direction can be deposited every time the workpiece 10 passes through the deposition section 40B.

[0147] The workpiece 10 that has passed through the film forming section 40B passes through the film processing section 50, during which the Al atoms of the thin film are nitrided. That is, the process gas inlet 58 supplies a process gas G2 containing nitrogen gas through the gas inlet 56. The process gas G2 containing nitrogen gas is supplied to a processing space 59 sandwiched between the window member 52 and the rotating table 31. The RF power source 54 applies a high frequency voltage to the antenna 53.

[0148] An electric field generated by the antenna 53 through which a high-frequency current flows due to application of a high-frequency voltage is generated in the processing space 59 via the window member 52. This electric field excites the process gas G2 containing nitrogen gas supplied to this space, generating plasma. The nitrogen chemical species generated by the plasma collide with the thin Al film on the workpiece 10 and combine with the Al atoms, forming a sufficiently nitrided AlN film.

[0149] The workpiece 10, which has passed through the film treatment section 50 by the rotation of the turntable 31 and has the AlN film formed thereon, heads to the surface treatment section 60, where ions are irradiated onto the AlN film (step S105). That is, the process gas introduction section 65 supplies a process gas G3 containing argon gas through a pipe. This process gas G3 is supplied to the space inside the cylindrical electrode 61 surrounded by the cylindrical electrode 61 and the turntable 31. When a voltage is applied to the cylindrical electrode 61 by the RF power supply 66, the cylindrical electrode 61 acts as an anode, and the chamber 20, the shield 62, the turntable 31, and the tray 11 act as cathodes, exciting the process gas G3 supplied to the space inside the cylindrical electrode 61 to generate plasma. Furthermore, the argon ions generated by the plasma collide with the AlN film formed on the workpiece 10, thereby moving particles to sparse portions of the film and flattening the film surface.

[0150] Thus, in steps S104 and S105, the workpiece 10 passes through the processing space 41 of the film formation unit 40B in operation to perform the film formation process, and the workpiece 10 passes through the processing space 59 of the film treatment unit 50 in operation to perform the nitriding process. Then, the AlN film formed on the workpiece 10 is planarized by the workpiece 10 passing through the space in the cylindrical electrode 61 of the surface treatment unit 60 in operation. Note that "operating" is synonymous with a plasma generation operation that generates plasma in the processing space of each unit 40, 50, 60.

[0151] The turntable 31 continues to rotate until an AlN film of a predetermined thickness is formed on the workpiece 10, that is, until a predetermined time obtained in advance by simulation, experiment, or the like has elapsed (step S106 No). In other words, the workpiece 10 continues to circulate between the film formation unit 40 and the film processing unit 50 until an AlN film of a predetermined thickness is formed. Since it is preferable to perform nitriding every time Al is deposited to an atomic level film thickness, it is preferable to determine the film formation speed, the nitriding speed, and the rotation speed of the turntable 31 (the speed of passing through each processing unit) so that the film formation and nitriding are balanced. For example, the rotation speed of the turntable 31 is set to about 50 to 60 rpm.

[0152] When a predetermined time has elapsed (Yes in step S106), the operation of the film forming unit 40B is stopped. Specifically, the application of voltage to the target 42 by the power supply unit 46 is stopped.

[0153] Next, a GaN film is formed on the workpiece 10 by the film forming unit 40A and the film processing unit 50 (step S107). Then, the GaN film is planarized (step S108). That is, the sputtering gas G1 supplied to the processing space 41 of the film forming unit 40A is turned into plasma by supplying the sputtering gas G1 to the periphery of the target 42 of the film forming unit 40A by the sputtering gas introduction unit 49 and applying a voltage to the target 42 of the film forming unit 40A by the power supply unit 46. Ions generated by the plasma collide with the target 42 and knock out sputtered particles containing Ga atoms. The workpiece 10 passes repeatedly under the film forming unit 40A by the rotation of the turntable 31.

[0154] The workpiece 10 that has passed through the film forming section 40A passes through the film processing section 50, during which Ga atoms in the thin film are nitrided. That is, a process gas introduction section 58 supplies a process gas G2 containing nitrogen gas through a gas introduction port 56. The process gas G2 containing nitrogen gas is supplied to a processing space 59 sandwiched between a window member 52 and a rotating table 31. An RF power source 54 applies a high frequency voltage to an antenna 53.

[0155] An electric field generated by the antenna 53 through which a high-frequency current flows due to application of a high-frequency voltage is generated in the processing space 59 through the window member 52. This electric field excites the process gas G2 containing nitrogen gas supplied to this space, generating plasma. The nitrogen chemical species generated by the plasma collide with the GaN thin film on the workpiece 10 and combine with Ga atoms, forming a sufficiently nitrided GaN film.

[0156] The workpiece 10, which has passed through the film treatment section 50 and has the GaN film formed thereon, heads to the surface treatment section 60, where the GaN film is irradiated with ions (step S108). By colliding with the GaN film formed on the workpiece 10, the particles are moved to sparse portions of the film, flattening the film surface.

[0157] As a result, a thin film in which sputtered particles containing Ga atoms are deposited on the surface of the AlN film. In this embodiment, a film can be deposited to a thickness that can contain 1 to 2 Ga atoms each time the film passes through the film deposition unit 40.

[0158] Thus, in steps S106 to S107, the workpiece 10 passes through the processing space 41 of the operating film forming unit 40A to form a film containing Ga, and the workpiece 10 passes through the processing space 59 of the operating film processing unit 50 to perform nitriding to form a GaN film. Then, the workpiece 10 passes through the space in the cylindrical electrode 61 of the operating surface processing unit 60 to planarize the GaN film formed on the workpiece 10.

[0159] When the time required for a GaN film of a predetermined thickness to be formed on the workpiece 10 has elapsed, which is obtained by simulation or experiment, the turntable 31 first stops the operation of the film forming unit 40. That is, when the predetermined time has elapsed (Yes in step S109), the operation of the film forming unit 40A is stopped. Specifically, the application of voltage to the target 42 by the power supply unit 46 is stopped. Since it is preferable to perform nitridation every time Ga is deposited to an atomic level thickness, it is preferable to determine the film formation speed, the nitridation speed, and the rotation speed of the turntable 31 (the speed of passing through each processing unit) so that the film formation and nitridation are balanced. For example, the rotation speed of the turntable 31 is set to about 50 to 60 rpm.

[0160] The formation of the AlN film and the GaN film is repeated until a predetermined number of layers is reached (Step S110 No.) When the predetermined number of layers is reached (Step S110 Yes), the formation of the buffer layer is terminated.

[0161] Subsequently, a GaN layer is further formed on the buffer layer (step S111). The formation of this GaN layer is performed in the same manner as the formation of the GaN film in the buffer layer. However, the film is formed for a time period that will result in a predetermined thickness set for the GaN layer.

[0162] After the buffer layer and the GaN layer are formed as described above, the operation of the film forming unit 40A is stopped as described above, and then the operation of the film processing unit 50 is stopped (step S112). Specifically, the supply of high frequency power to the antenna 53 by the RF power supply 54 is stopped. Then, the rotation of the turntable 31 is stopped, and the tray 11 on which the film-formed workpieces 10 are placed is removed from the chamber 20 and the load lock chamber 71 by performing the reverse operation of the above-mentioned loading operation (step S113).

[0163] That is, the turntable 31 rotates and stops so that the holding area HA on which the tray 11 carrying the workpiece 10 on which the film has been formed is placed is positioned at a position corresponding to the carry-in / out entrance 24. At this time, the table side pusher head 371 is in the retracted position, and the head positioning hole 11b of the tray 11 is in a position corresponding to the table side head pin 371a. Then, the table side pusher head 371 rises, and the tray 11 is handed over to the table side pusher head 371 from the holding hole 31c of the turntable 31. At this time, the table side head pin 371a fits into the head positioning hole 11b of the tray 11.

[0164] The transport arm 75 rotates, and one end of the transport arm 75 comes under the table-side pusher head 371. At this time, the arm-side pin 75a of the transport arm 75 is in a position corresponding to the arm-positioning hole 11c of the tray 11. In this state, the table-side pusher head 371 descends, and the tray 11 is delivered to the transport arm 75. As a result, the arm-side pin 75a fits into the arm-positioning hole 11c of the tray 11.

[0165] After the table-side pusher head 371 is positioned at the retracted position below the transport arm 75, the transport arm 75 rotates, and the tray 11 comes above the load-lock-side pusher head 741, which is at the retracted position. At this time, the load-lock-side head pin 741a of the load-lock-side pusher head 741 is at a position corresponding to the head positioning hole 11b of the tray 11. In this state, the load-lock-side pusher head 741 rises together with the valve body 73 to the delivery position, and the tray 11 is delivered from the transport arm 75 to the load-lock-side pusher head 741. As a result, the load-lock-side head pin 741a fits into the head positioning hole 11b of the tray 11.

[0166] After the transfer arm 75 rotates and retreats, the valve body 73 further rises to the sealing position and contacts the frame body 712 to seal the hole 712a. After the load lock chamber LL is opened to the atmosphere by the vent means, the operator opens the lid body 72 and removes the tray 11 from the opening 711.

[0167] In the above description, the film processing unit 50 and the surface processing unit 60 are operated continuously during the formation of the buffer layer (steps S104 to S111), but the operation of the film processing unit 50 and the surface processing unit 60 may be stopped after each step S104 to S111 is completed. In this case, the operation of the film processing unit 50 is stopped after the operation of the film forming units 40B and 40A is stopped. This allows the surface of the film formed on the workpiece 10 to be sufficiently nitrided, and an AlN film or GaN film without nitrogen defects can be obtained.

[0168] [effect] (1) The film forming apparatus 1 of the embodiment includes a chamber 20 capable of evacuating the inside thereof, a rotary table 31 that is provided within the chamber 20 and holds a plurality of workpieces 10 and circulates the workpieces 10 in a circular trajectory, a plasma generator P1 that converts a sputtering gas G1 introduced between a target 42 made of a film forming material and the rotary table 31 into plasma, a film forming unit 40 that deposits particles of the film forming material by sputtering on the workpieces 10 being circulated and transported by the rotary table 31 to form a film, and a processing unit that processes the film deposited by the film forming unit 40 on the workpieces 10 being circulated and transported by the rotary table 31. The rotating table 31 has a film processing section 50 which holds the workpiece 10, a plurality of holding areas HA which are provided in a circular film forming area FA other than the rotation axis 311 on the rotating table 31 and which faces the film forming section 40 and the film processing section 50, and in which individual workpieces 10 are held, a heating section 34 which is arranged in the plurality of holding areas HA, a pair of table side pushers 37 which penetrate the heating sections 34 on the rotating table 31 at positions where there is no overlap in a planar view and which are movable in a direction parallel to the rotation axis 311, and which hold and release the workpiece 10 from the holding areas HA, and a transfer section 70 which transfers the workpiece 10 to the table side pushers 37.

[0169] In this way, the pair of table side pushers 37 move through positions on the turntable 31 that do not overlap with the heating units 34 in a plan view, so that even if the heating units 34 are provided in the holding areas HA of the turntable 31, the workpiece 10 can be held and removed from the holding areas HA. This allows the workpiece 10 to be efficiently heated while being formed, and allows the workpiece 10 to be held and removed from the holding areas HA. By providing the heating units 34 in each holding area HA of the turntable 31, the heating units 34 can heat the workpiece 10 while rotating together with the rotating workpiece 10. This allows the workpiece 10 to be heated to a desired temperature without a drop in temperature, and can be heated to a desired temperature while being maintained at that temperature during film formation.

[0170] In addition, since the heating section 34 provided for each holding area HA of the turntable 31 heats the workpiece 10 held in the holding area HA, there is no need to heat the heating section 34 to an excessively high temperature compared to the temperature required for the workpiece 10, as compared to when heating is performed using only radiant heat from a position away from the turntable 31, and efficient heating is possible.

[0171] Also, for example, if a means for directly loading and unloading the workpiece 10 is used in the load lock chamber LL provided above the turntable 31, the workpiece 10 can be loaded and unloaded without interfering with the heat source 34 of the turntable 31 that has arrived at the holding area HA. ​​However, in order to directly load and unload the workpiece 10 into and out of the load lock chamber LL, it is necessary to provide a means for picking up and placing the workpiece 10 in the load lock chamber LL. Also, if the workpiece 10 is delivered via a transfer arm, it is necessary to provide a means for placing the workpiece 10 on the transfer arm side. In either case, a complex configuration must be placed in the chamber 20, and in particular, a drive mechanism must be placed in a vacuum, which leads to a decrease in product quality due to the generation of particles, an increase in the size of the device (expansion of the footprint), and an increase in costs.

[0172] In this embodiment, the configuration can be simplified by using a push-down (lifting) system using a pusher, and the driving mechanism can be disposed outside the chamber 20, making it possible to reduce particle sources within the chamber 20. Thus, in this embodiment, the object of the present invention can be achieved by enabling the push-down system with the heating source 34 disposed in the holding area HA.

[0173] (2) The transfer section 70 has a transport arm 75 on which the work 10 is placed and which is rotatable around an arm shaft 751 parallel to the rotation axis 311 of the turntable 31, and the table side pusher 37 has a table side pusher head 371 on which the work 10 is placed, and a table side lift shaft 372 which supports the table side pusher head 371 and can be raised and lowered parallel to the rotation axis 311 of the turntable 31, and the table side lift shaft 372 is arranged outside the area of ​​the rotation locus OR of the transport arm 75.

[0174] Therefore, the table side lift shaft 372 does not interfere with the rotation of the transport arm 75, and the workpiece 10 can be transferred by the rotation of the transport arm 75.

[0175] (3) The table side pusher head 371 has a table side head pin 371a that fits into a head positioning hole 11b provided in the tray 11 on which the workpiece 10 is placed and has a diameter smaller than that of the head positioning hole 11b, and a table side head protrusion 371b that is provided to protrude from the upper surface of the table side pusher head 371 and contacts and supports the lower surface of the tray 11.

[0176] Therefore, while the position of the tray 11 is restricted by the table-side head pin 371a, it is possible to allow the position of the head positioning hole 11b to change due to thermal expansion. Also, since the table-side head protrusion 371b only supports the tray 11 by contacting it over a small area, it is possible to allow the position to change due to thermal expansion and to make it difficult for the heat of the tray 11 to be transmitted to other members.

[0177] (4) The transport arm 75 has an arm side pin 75a that fits into an arm positioning hole 11c provided in the tray 11 on which the workpiece 10 is placed and has a diameter smaller than that of the arm positioning hole 11c, and an arm side protrusion 75b that is provided so as to protrude from the upper surface of the transport arm 75 and contacts and supports the lower surface of the tray 11.

[0178] Therefore, while the position of the tray 11 is restricted by the arm-side pin 75a, it is possible to allow the position of the arm positioning hole 11c to change due to thermal expansion. Also, since the arm-side protrusion 75b only supports the tray 11 by contacting it over a small area, it is possible to allow the position to change due to thermal expansion and to make it difficult for the heat of the tray 11 to be transmitted to other members.

[0179] (5) The transfer section 70 has a load lock chamber 71 for loading and unloading the workpiece 10 while maintaining a vacuum in the chamber 20. The load lock chamber 71 is provided with a load lock side pusher 74 for holding and removing the workpiece 10 from the transport arm 75. The load lock side pusher 74 has a load lock side pusher head 741 on which the workpiece 10 is placed, and a load lock side lift shaft 742 that supports the load lock side pusher head 741 and can be raised and lowered parallel to the rotation axis 311 of the turntable 31. The load lock side lift shaft 742 is provided outside the area of ​​the rotation trajectory OR of the transport arm 75.

[0180] Therefore, the load lock side lift shaft 742 does not interfere with the rotation of the transfer arm 75, and the workpiece 10 can be transferred by the rotation of the transfer arm 75.

[0181] (6) The load lock side pusher head 741 has a load lock side head pin 741a that fits into a head positioning hole 11b provided in the tray 11 on which the workpiece 10 is placed and has a diameter smaller than that of the head positioning hole 11b, and a load lock side head protrusion 741b that is provided to protrude from the upper surface of the load lock side pusher head 741 and contacts and supports the lower surface of the tray 11.

[0182] Therefore, while the position of the tray 11 is restricted by the load lock side head pin 741a, it is possible to allow the position of the head positioning hole 11b to change due to thermal expansion. Also, since the load lock side head protrusion 741b only supports the tray 11 by contacting it over a small area, it is possible to allow the position to change due to thermal expansion and to make it difficult for the heat of the tray 11 to be transmitted to other members.

[0183] (7) The rotating table 31 has a surface treatment section 60 that treats at least one of the surface of the workpiece 10 and the surface of the film during circulating transport. This can improve the adhesion between the surface of the workpiece 10 and the surface of the film. For example, if the workpiece 10 has an oxide film, the film deposited thereon is likely to peel off. If the surface of the film is uneven, the adhesion of the film deposited thereon decreases. For this reason, the surface treatment section 60 can remove the oxide film on the surface of the workpiece 10 and can flatten the surface of the film to improve the adhesion of the film.

[0184] If the workpiece 10 is transported in the atmosphere after the oxide film is removed outside the chamber 20, a natural oxide film will be generated again on the workpiece 10, even though the oxide film has been removed. Therefore, by performing the surface treatment in the chamber 20, i.e., in a vacuum, the oxide film will not adhere again to the workpiece 10 from which the oxide film has been removed, and the film can be formed in that state. In this embodiment, since the surface treatment can be performed in a vacuum, no natural oxide film will be generated after the oxide film is removed, and no natural oxide film will be generated even after the surface of the film is flattened, so that the adhesion of the film deposited on the formed film can be improved.

[0185] [Variations] The present invention is not limited to the above-described embodiment. The following modified examples are also applicable, provided that the basic configuration is similar to that of the above-described embodiment.

[0186] (1) The configuration of the transfer unit is not limited to the above-mentioned embodiment as long as it is capable of transferring the workpiece 10 while maintaining the pressure inside the chamber 20. For example, the transfer unit may be configured to deliver the workpiece 10 to the table-side pusher 37 via a load lock chamber provided on the top surface 20a of the chamber 20.

[0187] (2) In the above embodiment, the surface treatment section 60 is provided inside the chamber 20, but a surface treatment section may be provided outside the chamber 20. This surface treatment section is provided with a cylindrical electrode, an RF power source, and a process gas inlet section, similar to the surface treatment section 60, and can perform an oxide film removal process on the carried-in workpiece 10 in a stationary state. In this embodiment, since an oxide film removal process can be performed on the workpiece 10 waiting outside the chamber during a film formation process on the workpiece 10 in the chamber 20, the processing time in the chamber 20 can be shortened.

[0188] (3) The shape and number of the heat shield plates 36a are not limited to the above embodiment. The heat shield portion 36 is disposed so as to cover the lower surface of the turntable 31 at a distance, but the heat shield plates 36a may be stacked to cover the lower surface of the turntable 31 at a position corresponding to the holding area HA. ​​Also, the heat shield plates 36a are shaped like a U-shape and are formed by laminating them together. Also, although the heat shield plates 36a are formed of a side plate and a flat plate, the heat shield effect can be obtained even if they are formed of only a flat plate.

[0189] (4) In the above embodiment, a plurality of heating parts 34 are arranged, and each ring electrode 351a is connected to the heating part 34 by a cable 351b. The number of heating parts 34 connected to one ring electrode 351a may be one or more. When a plurality of heating parts 34 are connected to one ring electrode 351a, for example, selected heating parts 34 among the plurality of heating parts 34 are electrically connected to each other, and the ring electrode 351a is connected to only the representative heating part 34 via the cable 351b. This makes it possible to reduce the number of ring electrodes 351a compared to the number of heating parts 34, and to shorten the length of the rotating electrode part 351. As a result, the rotating shaft 311 on which the rotating electrode part 351 is arranged can be shortened, and the device installation space can be reduced and the rotation stability of the rotating table 31 can be improved.

[0190] (5) The types and numbers of film formation units 40, film processing units 50, and surface processing units 60 provided in chamber 20 are not limited to the above. There may be one film formation unit 40, or three or more. There may be a plurality of film processing units 50 and surface processing units 60. For example, the film formation unit 40 may be configured as a film formation apparatus 1 for forming a GaN film with only film formation unit 40A. In addition to the above-mentioned film formation unit 40, a film formation unit 40 using a different type of target material, a film formation unit 40 using the same type of target material, or a film processing unit 50 may be added.

[0191] Also, for example, a film-forming unit having a target 42 containing indium oxide and tin oxide, which are the ITO film-forming materials, may be added so that an ITO film can be formed in the chamber 20. In this case, instead of introducing nitrogen gas, oxygen gas may be introduced into the film processing unit 50 to compensate for the oxidation of the ITO film. Also, for example, the film-forming units 40A and 40B and the film processing unit 50 may be operated simultaneously so that an AlGaN (Aluminum Gallium Nitride) film containing Ga, Al, and N can be formed. This AlGaN film functions as the light-emitting layer 14 of the LED as shown in FIG. 12(A). In other words, the light-emitting layer 14 can also be formed in the chamber 20.

[0192] (6) The film forming unit 40 is a gallium oxide (Ga 2 O 3 The film processing section 50 may include a film formation section that deposits particles of a film formation material containing Ga atoms and oxygen (O), and the film processing section 50 may include an oxidation processing section that oxidizes the particles of the film formation material deposited in the film formation section. That is, instead of or in addition to the above-mentioned film formation section 40A, a film formation section that uses a material containing Ga atoms and oxygen (O) as the target 42 may be provided, and instead of or in addition to the nitriding processing section, an oxidation processing section that uses a gas containing oxygen as the process gas G2 may be provided.

[0193] (7) In addition to the above embodiment, the film forming unit 40 may have a film forming unit having a target 42 made of a film forming material containing InN. Simple indium (In) has a low melting point, so an InN target is actually used to which nitrogen (N) is added in order to obtain a solid target 42. As described above, the InN target contains In atoms that are insufficiently bonded to nitrogen.

[0194] (8) In addition to the above embodiment, an impurity doping section may be provided to dope the formed GaN film with n-type or p-type impurities (dopants). In this case, the film forming section, the nitriding section, and the impurity doping section are arranged in this order on the circulation transport path. The impurity doping section has the same configuration as the film forming section 40.

[0195] In this embodiment, when forming the GaN film, a layer including a p-channel (p-type semiconductor) in which Mg ions are added to the GaN layer can be formed together with the film forming unit 40A and the film processing unit 50. Also, when forming the GaN film, a layer including an n-channel (n-type semiconductor) in which Si ions are added to the GaN layer can be formed together with the film forming unit 40A and the film processing unit 50.

[0196] The n-type impurities or p-type impurities added in the impurity adding processing section are not limited to those exemplified above. For example, the n-type impurities may be Ge or Sn. In this case, the film forming material constituting the target provided in the impurity adding processing section may be a film forming material containing Ge or Sn instead of Si.

[0197] [Other embodiments] Although the embodiment of the present invention and the modified examples of each part have been described, these embodiments and the modified examples of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, modifications, and combinations can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims. [Explanation of symbols]

[0198] 1 Film deposition equipment 10 Work 10a Buffer layer 10b GaN layer 10c GaN layer 10d Light-emitting layer 10e transparent conductive film 11 Tray 11a hole 11b Head positioning hole 11c Arm positioning hole 12 Absorbing material 14 Emitting layer 20 Chamber 20a Top 20b Bottom 20c side 20d through hole 20e Fastening members 21 Exhaust port 21a opening 22 Partition 23 Exhaust section 24 Loading / unloading entrance 30 Conveyor 31 Rotating Table 31a Insertion hole 31b Fastening member 31c retaining hole 31d Locating pin 31e aperture 32 Motor 33 Insulation section 34 Heating section 35 Rotating joint 36 Heat shield 36a Heat shield 36b Support leg 37 Table side pusher 40, 40A, 40B, 40C Film forming section 41 Processing Space 42 Target 43 Backing Plate 44 electrode 46 Power supply section 47 Gas inlet 48 Piping 49 Sputtering gas inlet 50 Membrane processing section 51 Cylindrical body 52 Window Materials 53 Antenna 54 RF power supply 55 Matching Box 56 Gas inlet 57 Piping 58 Process gas inlet 59 Processing Space 60 Surface Treatment Section 61 Cylindrical electrode 61a opening 61b flange 61c Insulating materials 61d Housing 62 Shield 64 Processing Space 65 Process gas inlet 66 RF power supply 67 Matching Box 70 Transfer section 71 Load Lock Chamber 72 Lid 72a Hinge part 73 Valve body 73a Sealing member 74 Load lock side pusher 75 Transport Arm 75a Arm side pin 75b Arm side protrusion 90 Control device 311 Rotational axis 311a center hole 311b Plate 351 Rotating electrode part 351a Ring electrode 351b Cable 352 Stationary electrode section 352a Brush electrode 352b Cable 371 Table side pusher head 371a Table side head pin 371b Table side head protrusion 372 Table side lift shaft 373 Drive unit 711 Aperture 712 Frame 712a hole 731 Valve body lifting shaft 732 Drive unit 741 Load lock side pusher head 741a Load lock side head pin 741b Load lock side head protrusion 742 Load lock side lift shaft 751 Arm shaft 752 Drive unit FA deposition area G1 Sputtering Gas G2 Process Gas G3 Process Gas HA retention area L Transport route LL Load Lock Chamber

Claims

1. a chamber capable of creating a vacuum therein; a rotary table provided in the chamber, holding a plurality of workpieces and circulating and transporting the workpieces along a circular trajectory; a film forming section including a plasma generator for generating plasma from a sputtering gas introduced between a target made of a film forming material and the rotating table, and depositing particles of the film forming material by sputtering on the workpiece being circulated and transported by the rotating table to form a film; a film processing unit that processes a film deposited by the film forming unit on the workpiece being circulated and transported by the rotary table; a plurality of holding areas in which the workpieces are held, the holding areas being provided in an annular film-forming area facing the film-forming unit and the film-processing unit, in an area other than the rotation axis of the turntable; Heating units disposed in the plurality of holding regions; a pair of table side pushers that are provided to pass through positions of the rotating table that do not overlap with the heating portion in a plan view, and are movable in a direction parallel to the rotation axis of the rotating table, and hold and release the workpiece from the holding area; A transfer unit that transfers the work to the table side pusher; A film forming apparatus comprising:

2. the transfer unit has a transport arm on which the workpiece is placed and which is rotatably provided around an arm shaft parallel to a rotation axis of the rotary table; The table side pusher is A table side pusher head on which the workpiece is placed; a table-side lift shaft that supports the table-side pusher head and is movable in a direction parallel to a rotation axis of the rotary table; having 2. The film forming apparatus according to claim 1, wherein the table-side lift shaft is provided outside a region of a rotation locus of the transfer arm.

3. The table side pusher head is a table-side head pin that fits into a head positioning hole provided in a tray on which the workpiece is placed and has a diameter smaller than that of the head positioning hole; a table-side head protrusion provided on an upper surface of the table-side pusher head and contacting and supporting a lower surface of the tray; 3. The film forming apparatus according to claim 2, further comprising:

4. The transport arm includes: The arm side pin is fitted into an arm positioning hole provided in the tray on which the workpiece is placed, and has a smaller diameter than the arm positioning hole. an arm-side protrusion provided on an upper surface of the transport arm so as to protrude therefrom and contacts and supports a lower surface of the tray; 3. The film forming apparatus according to claim 2, further comprising:

5. the transfer unit has a load lock chamber that carries the workpiece in and out while maintaining a vacuum in the chamber; a load lock side pusher for holding and releasing the workpiece with respect to a transport arm is provided in the load lock chamber; The load lock side pusher is a load lock side pusher head on which the workpiece is placed; a load lock side lift shaft supporting the load lock side pusher head and capable of moving up and down in a direction parallel to a rotation axis of the rotary table; having 3. The film forming apparatus according to claim 1, wherein the load lock side lift shaft is provided outside a region of a rotation locus of the transfer arm.

6. The load lock side pusher head is a load lock side head pin that fits into a head positioning hole provided in a tray on which the work is placed and has a diameter smaller than that of the head positioning hole; a load lock side head protrusion provided on an upper surface of the load lock side pusher head so as to protrude therefrom and contacts and supports a lower surface of the tray; 6. The film forming apparatus according to claim 5, further comprising:

7. 2. The film forming apparatus according to claim 1, further comprising a surface treatment section for treating at least one of a surface of the workpiece and a surface of the film during circulating transport by the rotary table.

8. the film formation unit includes a GaN film formation unit that deposits particles of the film formation material including GaN, 2. The film forming apparatus according to claim 1, wherein the film processing section includes a nitriding section that nitrides particles of the film forming material deposited in the GaN film forming section.

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