Fluid distributing device for thin-film deposition apparatus, related apparatus and method

Abstract

To provide a fluid distributing device for directing fluids into a reaction chamber of a thin-film deposition apparatus, related apparatus, systems and methods which can markedly improve uniformity of precursor distribution on the substrates.SOLUTION: A device 100 for directing fluids into a reaction chamber 201 of a thin-film deposition apparatus comprises an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates generally to thin film deposition methods and related equipment. In particular, the present invention relates to a fluid distribution device for a thin film deposition reactor for establishing a laminar flow of fluid within the reaction space. [Background technology]

[0002] Thin film deposition methods in which thin film coatings are deposited on substrates from a gas phase have been described extensively in the art. Atomic layer deposition (ALD) technology, generally considered a subclass of chemical vapor deposition (CVD), has proven its efficiency in producing high-quality, conformal coatings on three-dimensional substrate structures.

[0003] ALD is based on alternating self-saturating surface reactions in which different reactants (precursors), provided as compounds or elements in a non-reactive (inert) gaseous carrier, are sequentially introduced into a reaction space containing a substrate. After reactant deposition, the substrate is purged with an inert gas. A conventional ALD cycle proceeds in two half-reactions (introduction-purge of the first precursor, introduction-purge of the second precursor) which result in the self-limiting (self-saturating) formation of a layer of material, typically 0.05-0.2 nm thick.

[0004] During each introduction, a specific precursor chemical is injected into an inert (carrier) fluid that flows continuously through the reaction space. The introductions are separated by a purge period in which the reaction space is purged with the aforementioned carrier gas to remove the precursor chemical from the previous introduction. In a deposition run, one or more cycles are repeated as many times as necessary to obtain a film having a predetermined thickness. Typical substrate exposure times for each precursor range within 0.01 to 1 second (per introduction). Common precursors include metal oxides, elemental metals, metal nitrides, and metal sulfides.

[0005] One common drawback that can adversely affect the quality of films produced by chemical vapor deposition, especially ALD, is a non-conformal flow profile upon introduction of reactive (precursor) materials into the reaction space. Protruding features of the reaction chamber and various protruding structures within the reaction space can disrupt the flow, resulting in swirling and / or turbulent flow. In such devices, the flow profile tends to switch from laminar to turbulent or vice versa, since even small changes in the fluid flow (in terms of time, velocity, chemical composition, etc.) tend to affect the flow profile in unpredictable ways.

[0006] The deposition time is mainly limited by the long purge period. To optimize the deposition rate (in terms of time per deposition cycle, e.g. 0.5-20 seconds per deposition cycle), the flow of fluids through the deposition reactor should be as even as possible. In ALD, turbulence can slow down the evacuation of the introduced chemicals, which results in an incomplete purge where the first precursor remains in the reaction space at the time of the delivery of the second precursor. Undesirable situations arise when the second precursor reacts in the gas phase with the first precursor, which results in particle formation. In the worst case scenario, such a situation damages the sample to be coated. In any case, the presence of two precursors instead of one in an ALD reaction is prone to particle formation, coating non-uniformity, and poor quality films with impaired film properties such as breakthrough voltage and increased particles.

[0007] In this regard, an update to the field of thin film deposition technology is still desired to address the challenges associated with avoiding turbulence while providing efficient mixing of precursors in thin film deposition reactors. Summary of the Invention

[0008] The object of the present invention is to solve or at least alleviate each of the problems resulting from the limitations and drawbacks of the related art. The object is achieved by various embodiments of a fluid distribution device for a thin film deposition apparatus, related apparatus, systems and methods. Thus, in one aspect of the present invention, a fluid distribution device for a thin film deposition apparatus is provided according to the subject matter defined in independent claim 1.

[0009] In a preferred embodiment, a fluid distribution device for a thin film deposition apparatus comprises an expansion region including subregions for receiving said fluid streams F1, F2 through at least one inlet arranged in each subregion such that the fluid streams F1, F2 propagate through the subregions in a direction essentially towards each other, and a transition region in which the fluid streams F1, F2 reaching there through the subregions mix, each subregion having an interior whose distance across it increases in the direction of the fluid flows F1, F2 to an expansion width D1 in cross section between each inlet and the transition region, the transition region being configured to direct the mixed fluid stream into the reaction chamber of the deposition apparatus such that the flow F established at the inlet of the reaction chamber and propagating the length of the said reaction chamber is laminar.

[0010] In an embodiment, within each sub-region, the fluid flow established in the distance between the inlet and the transition region is laminar.

[0011] In an embodiment, the transition region is a channel with an inlet and an outlet provided as an opening having widths d2, d2' and a length extending a distance D1 corresponding to the expanded width of each sub-region.

[0012] In an embodiment, the transition region 102 further comprises a narrowing region formed by a slope of the sides of the channel to an essentially constant width d3 over a distance D1.

[0013] In an embodiment, at least a portion of said channels have sides that are sloped with a curvature.

[0014] In an embodiment, the sub-regions of the expansion region are arranged in a cross section P1 that is essentially perpendicular to the longitudinal axis Y of the deposition device.

[0015] In an embodiment, the direction of the fluid streams F1, F2 propagating through the expansion region is essentially perpendicular to the direction of the fluid flow F propagating through the reaction chamber.

[0016] In an embodiment, the sub-regions of the expansion region are each disposed in a plane P1', each such plane P1' being inclined by an angle alpha, α, with respect to the plane P1. In an embodiment, said plane P1' is mirror symmetric.

[0017] In an embodiment, in the transition region, each fluid stream F1, F2 turns from cross section P1, P1' to cross section P2, which is defined as the plane of symmetry of the sub-region along the longitudinal axis Y of the deposition device.

[0018] In an embodiment, the fluid distribution device further comprises a flow shaping element configured to adjust the flow direction of the fluid streams F1, F2 entering the transition region essentially towards the reaction chamber. In an embodiment, the fluid distribution device further comprises a mixer in the transition region.

[0019] In another aspect, a thin film deposition apparatus is provided according to the subject matter defined in independent claim 15.

[0020] In an embodiment, the apparatus comprises a reaction chamber for accommodating substrates with their sides arranged adjacent to each other, and a fluid distribution device comprising an expansion region including subregions receiving therein said fluid streams F1, F2 via at least one inlet arranged in each subregion such that the fluid streams F1, F2 propagate through the subregions in a direction essentially towards each other, and a transition region in which the fluid streams F1, F2 arriving therethrough via the subregions mix, each subregion having an interior whose distance across it increases in the direction of the fluid flows F1, F2 in cross section between each inlet and the transition region to an expansion width D1, the transition region being configured to further direct the mixed fluid stream into the reaction chamber such that a flow F established at the inlet of the reaction chamber and propagating between the sides of the substrates through the length of the aforementioned reaction chamber is laminar.

[0021] In an embodiment, the apparatus comprises a fluid distribution device according to any of the above embodiments.

[0022] In an embodiment, the reaction chamber of the aforementioned apparatus has a constant cross-section throughout its length.

[0023] In an embodiment, in the aforementioned device, the transition region is established by a channel with an inlet opening and an outlet opening, said inlet opening and / or said outlet opening having the same cross section as the reaction chamber.

[0024] In an embodiment, the interior of the reaction chamber of the aforementioned apparatus is dimensionally adapted to accommodate a predetermined number of substrates therein.

[0025] In an embodiment, the apparatus is configured to deposit material onto a substrate surface by establishing a laminar flow F of precursor fluid through the length of a reaction chamber, the precursor fluid propagating between the sides of said substrate at an essentially uniform velocity at the tip.

[0026] In an embodiment, in the aforementioned apparatus, the precursor fluid delivered into the reaction chamber comprises at least one precursor chemical.

[0027] In an embodiment, the precursor fluids are delivered into the reaction chamber of the aforementioned apparatus in several sequential introductions.

[0028] In an embodiment, the apparatus is configured to deposit a coating film simultaneously on all of the substrate surfaces.

[0029] In an embodiment, the apparatus further comprises an exhaust conduit and an enclosure essentially disposed around said exhaust conduit and receiving fluid flowing from the reaction chamber through said conduit, said exhaust conduit and said enclosure forming an exhaust assembly configured to redirect an exhaust flow exiting the reaction chamber. In an embodiment, in said exhaust assembly, said exhaust conduit and said enclosure form a passageway through which the exhaust flow exiting the reaction chamber through the exhaust conduit remains within the enclosure, turns around one or more walls forming said conduit, and is further directed into an exhaust manifold through an opening disposed in at least one side wall of the enclosure.

[0030] In an embodiment, the apparatus is configured as an apparatus for chemical vapor deposition reactions. In an embodiment, the apparatus is configured as an apparatus for atomic layer deposition (ALD).

[0031] In a further aspect, a method for depositing a material onto a substrate surface in an apparatus for thin film deposition is provided according to the subject matter defined in independent claim 28.

[0032] In a still further aspect, the use of a thin film deposition apparatus according to some of the above aspects for depositing a thin film of a coating material onto a substrate surface is provided according to the subject matter defined in independent claim 30.

[0033] In a still further aspect, a thin film deposition system comprising several thin film deposition apparatus according to several above aspects is provided according to the subject matter defined in independent claim 31. In an embodiment, the apparatuses in said system are connected to each other in series and / or in an array.

[0034] In an embodiment, the devices are arranged in the aforementioned system to receive a common precursor compound in at least two of the devices.

[0035] In some further aspects, a method for uniform distribution of a fluid in an apparatus for thin film deposition according to some of the above aspects is provided according to the subject matter defined in independent claim 33.

[0036] The usefulness of the present invention is obtained for a variety of reasons depending on each particular embodiment. Overall, the present invention provides a device and method for efficiently mixing precursor chemicals in a deposition apparatus while simultaneously establishing laminar flow conditions in a chemical vapor deposition reaction. Avoiding vortex motion in an ALD reaction allows for the production of high quality films with improved thickness uniformity. By establishing and controlling the laminar flow profile, the present invention allows for shorter purge periods and faster overall production processes.

[0037] In ALD implementations, laminar flow is maintained throughout both the introduction and purge phases. Establishing laminar flow conditions during the purge phase allows for more efficient removal of fluids, such as gases, from the reaction space and correspondingly reduces the time period required to purge a given (reaction chamber) volume. Thus, the fluid flowing laminarly into the reaction space steadily and evenly "pushes away" precursor compounds and / or reaction products remaining in the gas phase from previous introductions.

[0038] In solutions (prior art) that do not support laminar flow, the concentration of said precursor compounds and / or reaction products in the reaction space is typically reduced by "dilution" with an inert fluid. However, due to the inherently turbulent conditions, purging of the reaction chamber may last for a very long time (e.g., more than 1 minute). In the device presented here, the laminar flow conditions established at the inlet of the reaction chamber and maintained when propagating fluids through said reaction chamber are close to those observed in a laminar plug flow reactor.

[0039] The fluid distribution device according to the invention makes it possible to keep precursor chemicals arriving from different sources in the reaction chamber separated from each other, thus effectively preventing them from mixing and / or reacting with each other until they reach a predetermined space in the reactor apparatus. Thus, film formation on the reactor surfaces in front of the reaction chamber is avoided. The apparatus guides the precursor chemicals straight into the reaction chamber without them being present on undesired surfaces (due to untimely / premature mixing).

[0040] In the disclosed device, the propagation of the precursor compounds through the reaction space occurs one precursor at a time, which is made possible by the improved flow rate characteristics made possible by the innovative configuration. The device thus allows to avoid problems that often occur, for example, in showerhead reactors and that are related to so-called CVD-type reactions (based on directing at least two precursors into the reaction space simultaneously) in ALD reactors (based on directing the precursors into the reaction space sequentially so that the chemicals do not mix).

[0041] When chemical vapor deposition reactions are performed in the apparatus according to the present disclosure, all substrates, such as wafer substrates, in the reaction chamber are deposited with a uniform layer of precursor, so that the concentration of precursor is uniform across the individual substrate (side) surfaces and the surfaces of all substrates in the reaction space. Due to its ability to mix precursor chemicals uniformly and spread said mixed chemicals evenly over all substrate surfaces, the amount of precursor chemical(s) introduced into the reaction space with each introduction can be minimized. This allows for chemical savings, reduced film formation in the feed path(s), and minimized purge periods.

[0042] The device further operates without pressure loss.

[0043] In this disclosure, materials having layer thicknesses of less than 1 micrometer (μm) are referred to as "thin films."

[0044] The expressions "reactive fluid" and "precursor fluid" refer in the present disclosure to a fluid stream comprising at least one chemical (precursor compound), hereafter a precursor, in an inert carrier.

[0045] The term "several" in this disclosure refers to any positive integer starting from 1, e.g., 1, 2, or 3. The term "multiple" in this specification refers to any positive integer starting from 2, e.g., 2, 3, or 4.

[0046] The terms "first" and "second" are not intended to denote any order, quantity, or importance, but rather are merely used to distinguish one element from another, unless expressly stated otherwise.

[0047] The term "several" in this disclosure refers to any positive integer starting from 1, e.g., 1, 2, or 3. The term "multiple" in this specification refers to any positive integer starting from 2, e.g., 2, 3, or 4.

[0048] Some of the elements in the drawings illustrated herein are not necessarily to scale. [Brief description of the drawings]

[0049] [Figure 1] 2 illustrates generally a thin film deposition reactor 200 according to an embodiment. [Diagram 2] FIG. 2 is a partial cross-sectional view of a deposition reactor 200 and fluid flows established therein according to an embodiment. [Figure 3A] FIG. 1 is a side cross-sectional view of a fluid distribution device 100 according to various embodiments. [Figure 3B] FIG. 1 is a side cross-sectional view of a fluid distribution device 100 according to various embodiments. [Figure 4A] 1 illustrates a schematic diagram of fluid propagation through a deposition reactor according to an embodiment. [Figure 4B] The arrangement of various parts within the deposition reactor is shown diagrammatically in cross section. [Figure 5A]FIG. 1 is a horizontal cross-sectional view of a fluid distribution device 100 according to an embodiment. [Figure 5B] FIG. 1 is a (partial) perspective view of a deposition reactor having a fluid distribution device 100. [Figure 5C] FIG. 1 is a (partial) perspective view of a deposition reactor having a fluid distribution device 100. [Figure 6A] FIG. 2 is a perspective view of a deposition reactor 200 having an exhaust system according to an embodiment. [Figure 6B] FIG. 2 is a schematic diagram of a deposition reactor 200 having an exhaust system according to another embodiment. [Figure 7A] 5A-5C illustrate various embodiments of a thin film deposition system 500 from a top view. [Figure 7B] 5A-5C illustrate various embodiments of a thin film deposition system 500 from a top view. [Figure 7C] 5A-5C illustrate various embodiments of a thin film deposition system 500 from a top view. [Figure 7D] 5A-5C illustrate various embodiments of a thin film deposition system 500 from a top view. [Figure 8] FIG. 2 is a block diagram of a control system for a deposition reactor 200 according to an embodiment. [Figure 9] 1 shows flow uniformity measurements obtained during deposition onto a circular wafer substrate. [Figure 10] 1 shows flow uniformity measurements obtained during deposition onto a circular wafer substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0050] Detailed embodiments of the present invention are disclosed herein with reference to the accompanying drawings. The same reference numbers are used throughout the drawings to refer to the same parts. The following listed reference numbers are used for the parts: 100 Fluid distribution device 101 Expansion Area 101-1, 101-2 Sub-areas of the extension area 102 Transition region established by channels 102A-102B 102A, 102B corresponding inlet and outlet openings (in the transition region) 103 Entrance 104 Stenosis area 105 Flow-Shaping Elements 106 Mixing equipment 107 Plasma Generator 110 Cover for expansion area 112, 121 Inner surface of channel 102A-102B 200 Deposition Equipment 201 Reaction chamber 202 Substrate holder 203 Door 204 Heater 210 Vacuum Chamber 10 Substrate 11 Inert (carrier) fluids 12 Precursor Fluids 12X, 12A-12G Optionally, precursors in corresponding containers (precursor sources) 21 Precursor fluid intake line 21A Precursor Fluid Flow Regulating Device 21B Precursor source(s) shutoff valve 22 Valve block 301 Control System 40 Exhaust manifold 41, 41A Exhaust duct with corresponding outlet opening 42, 42A Enclosure for an exhaust conduit having an outlet opening therefor 43 Feedthrough arrangement for vacuum pump foreline 401 Exhaust line (vacuum pump foreline) 500 (500A, 500B, 500C, 500D) Deposition System

[0051] 1 illustrates a thin film deposition apparatus, hereafter reactor, at 200, according to various embodiments. In all configurations, the reactor 200 comprises a fluid distribution device 100 (dashed box) configured to generate a laminar flow of fluid throughout a reaction space incorporating multiple substrates 10. The reactor 200 comprises a reaction chamber 201, and a fluid distribution device 100 having an expansion region 101 and a transition region 102, the transition region 102 connecting the expansion region 101 with the reaction chamber 201.

[0052] Reactor 200 is preferably configured to utilize the principles of a vapor deposition based technology, preferably a chemical vapor deposition (CVD) based technology. In a preferred embodiment, reactor 200 is configured as an atomic layer deposition (ALD) device.

[0053] In ALD, at least one substrate is typically exposed to time-separated introductions of precursors in a reaction vessel to deposit material on the substrate surface by sequential self-saturating surface reactions. In the context of this application, the term ALD includes all applicable ALD-based techniques and any equivalent or closely related techniques, such as the following ALD subtypes: MLD (molecular layer deposition), plasma-assisted ALD, such as PEALD (plasma-enhanced atomic layer deposition), and photon-enhanced atomic layer deposition (also known as flash-enhanced ALD).

[0054] The reactor 200 may further be adapted for physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD) processes.

[0055] FIG. 1 thus illustrates an exemplary installation of a thin film deposition apparatus 200 in a vertical cross-cut. The reaction chamber 201 is configured as an elongated vessel having an interior that accommodates a plurality of substrates 10, preferably arranged side-by-side with their sides facing each other. Flat planar substrates, such as plate-like or disk-like substrates, which can be arranged in a vertical stack (flat surfaces arranged side-by-side), are preferably utilized. The substrates 10 can be wafers, such as metal wafers or silicon wafers. The interior of said reaction chamber 201 forms a reaction space (deposition space).

[0056] The substrates 10 can be loaded into the reaction chamber either individually or in batches. Batch loading is typically preferred. Without limitation, the substrate holder 202 can be configured for batches of 1-27 substrates. Some embodiments include batches of 15 substrates.

[0057] In various configurations, the substrate holder 202 can be integrated with the door / hatch 203 or the reaction chamber 201. Alternatively, the substrate holder can be provided as a separate, removable part. The substrate holder 202 can be formed by at least one element, such as a rod or bar, on which the substrate 10 is placed (e.g., fitted into a groove(s) provided in the rod). In some configurations, the substrate holder 202 comprises means, such as actuator(s) and motor(s), for moving, vibrating and / or rotating the substrate(s). In this way, the deposition coating process on said substrate(s) can be optimized, in particular with regard to the uniformity of the deposition.

[0058] It is advantageous to rotate a disk-shaped substrate, such as a wafer, in the reaction space. The rotation speed can be relatively slow, such as half a rotation (180 degrees) per full deposition run (including all deposition cycles required for the deposition of a film), or relatively fast, such as one full rotation (360 degrees) during a single chemical introduction. In a configuration in which the substrate holder 202 is provided as at least one rod fixed in the reaction space, the rotation of the substrate(s) 10 can be implemented by imparting a rotational movement to said rod about its central axis. Alternatively, the substrate holder can be implemented as several rods, for example fixed in the reaction chamber 201 to a sliding device (not shown), such as rail(s) arranged according to an essentially circular track. In such a case, the rotation is performed around the central axis of the substrate(s) 10 by moving the rod (substrate holder 202) on an essentially circular track.

[0059] The substrates 10 in a batch are preferably arranged so that their sides are equidistant from each other.

[0060] The reaction chamber 201 is configured to fit a batch of substrates received therein. Thus, the outermost substrate in the batch (the one facing the side wall of the reaction chamber) is separated from said side wall by essentially the same distance as is provided between all substrates in the batch. The reaction chamber is implemented as a flat elongated container dimensionally adapted to the predetermined number of substrates 10 received therein.

[0061] In a preferred embodiment, the fluid(s) propagate through the reaction chamber 201 along its longitudinal plane. The longitudinal plane of the reaction chamber is the plane that passes from the head (inlet) of the reaction chamber to its tail (exhaust). In this disclosure, the direction from head to tail is referred to as the y-direction or along the Y-axis (longitudinal axis). Fluid flow through the reaction chamber is therefore considered to occur along a longitudinal plane that is independent of whether the reactor 200 is positioned vertically or horizontally within the overall facility.

[0062] 1 shows a configuration of the reactor 200 in an upright position that generally allows fluid to propagate along the longitudinal plane of the reaction chamber 201 in an essentially vertical ("top-to-bottom") direction. A configuration in which the reactor 200 is positioned horizontally is shown in FIG. 6A.

[0063] The substrate is loaded into the reaction chamber 201 through an opening that is typically closed by a door 203 (FIGS. 1 and 6). Any side of the reaction chamber may be provided with an opening for substrate loading. Depending on whether the reactor 200 is vertically or horizontally positioned, loading may be implemented from the side (FIG. 1), from the bottom (FIG. 6), or from above (not shown).

[0064] Unless expressly stated otherwise, the longitudinal plane, longitudinal axis, and / or Y-axis of the device 200 are aligned with the same of the reaction chamber 201.

[0065] The reactor 200 further comprises an exhaust (exhaust) line 401 for discharging an exhaust stream, such as excess carriers, precursors, and reaction products, from the reaction chamber 201. The exhaust line 401 constitutes a foreline for a pump unit and optionally one or more valves (not shown). An arrangement in which the reaction chamber is connected to the exhaust line 401 by an exhaust manifold is described in further more detail below.

[0066] In some cases, it may be preferable to perform an uninterrupted withdrawal of fluidic materials from the reaction chamber, and therefore the pump unit may be configured as a vacuum pump for continuously removing fluidic materials from the reaction chamber during the entire deposition process.

[0067] In operation, the device 200 further comprises an outer housing 210 that houses the reaction chamber 201. In some cases, the intermediate space established by the interior of said outer housing is maintained under vacuum and is referred to as a vacuum chamber. An exemplary configuration comprising a vacuum chamber 210 is shown in Figures 1 and 6A. An embodiment in which an outer housing, optionally configured as a vacuum chamber, incorporates two or more devices 200 is further described below.

[0068] Said intermediate space 210 can further accommodate several heaters / heating elements 204 (FIG. 1). The heating element(s) can be located, for example, adjacent to one or more reaction chambers. Additionally or alternatively, several heating elements can be integrated into one or more walls of the vessel forming the reaction chamber(s) 201. In a further additional or alternative configuration, heating of the reaction space can be implemented, for example, by directing a pre-heated fluid, such as a gas, therein via a supply path 21. In such a case, several heating elements can be arranged, for example, adjacent to or encompassing the supply path 21 or integrated into a pipe (not shown) forming said supply path. In a further configuration, the heating element(s) can be provided in a separate compartment 22 enclosing the valve (FIG. 1).

[0069] The reaction chamber 201 is preferably maintained under vacuum during handling, loading and unloading, with the pressure in the reaction chamber being maintained at a level below 1 kPa (10 mbar), preferably below 10 Pa (0.1 mbar). In some configurations, the pressure in the reaction chamber is set to the same level as the ambient pressure.

[0070] It is further preferred to maintain the pressure in the intermediate space / vacuum chamber 210 at a level of at least 1 kPa (10 mbar). Preferably, the pressure in the intermediate space 210 is maintained at a level above 1 kPa to establish a pressure difference between the interior of the reaction chamber 201 (typically less than 100 Pa) and the interior of the vacuum chamber 210.

[0071] In some examples further described below, the pressure in the intermediate space is maintained higher than in the reaction chamber. Depending on the particular operating parameters, precursors, and / or reaction conditions, the pressure in the intermediate space 210 can further be maintained lower than in the reaction chamber 201 or the same as in the reaction chamber.

[0072] The precursor fluid(s) 12 are delivered into the reactor via several intake lines (supply paths) 21 and associated switching and / or regulating devices 21A, such as valves. FIG. 1 illustrates an embodiment in which the precursor fluid 12 is delivered to the interior of the reaction chamber 201 by at least one supply path 21. In some cases, it is preferred that the reactor 200 comprises two, three or more supply paths 21 (not shown). In some configurations, the apparatus may comprise a manifold supply path and distribution piping connectable to various precursor sources and one or more inert gas supplies (not shown). In some alternative configurations, the provision of the supply path(s) can be omitted by directly connecting the valve(s) 21A to the fluid distribution device 100.

[0073] The precursor fluid 12 delivered into the reaction chamber preferably includes at least one precursor compound 12X provided as any one of 12A, 12B, 12C, 12D, 12E, 12F, and 12G.

[0074] The precursor(s) are delivered in the form of a fluid into the supply path 21. The reactive fluid 12 flowing through the supply path 21 is preferably a gaseous substance containing a given precursor chemical 12X carried by an inert carrier 11. The precursor(s) are supplied into the supply path 21 from one or more sources, configured for example as containers, cartridges or piping systems. Each source preferably contains a given precursor 12X provided as a compound, molecule or element. Each source is equipped with at least one valve 21B, provided for example as a manual closing valve. The various precursor chemicals required for the deposition reaction(s), such as the ALD reaction(s), can be led into the reaction space via a single supply path 21.

[0075] In some cases, the precursor(s) 12X are provided in the form of a gas, such as ammonia gas (NH3). In some other cases, the precursor(s) are provided in liquid or solid form and vaporized before being mixed with the inert carrier.

[0076] The inert carrier 11 is a fluid, preferably a gas, such as nitrogen (N2), argon (Ar), or any other suitable gaseous medium that is essentially completely unreactive with the precursors (reactants) and reaction products. The inert carrier gas 11 is supplied from one or more separate sources (not shown).

[0077] The precursor fluids 12 are delivered into the reaction chamber 201 in several sequential introductions. As an example, the ALD process for depositing coating layers containing aluminum oxide by using trimethylaluminum (first precursor) and water (second precursor), popular in making microelectromechanical systems (MEMS), employs two of these chemicals that are sequentially supplied into the reaction chamber from two sources via the same supply path 21 or two different supply paths. Between introductions, the reaction chamber is purged with an inert fluid.

[0078] In the production of complex multi-layer structures (so-called stacks), where each layer is produced in a separate ALD cycle and / or where said layers differ from one another in composition, three or more different precursors and corresponding sources may be used.

[0079] In some cases, a mixture of compounds, for example a given precursor in a solvent, can be provided from the same precursor source.

[0080] The precursor(s) 12X and the inert carrier 11, each supplied from different sources, enter the supply path 21 via a multi-port valve 21A. The valve 21A is configured, for example, as a three-port valve with an automatic control system and optionally a manual back-up control. In a preferred configuration, the valve 21A is a three-way valve, commonly known as an ALD valve. The ALD valve is configured to maintain a steady flow of the inert carrier fluid 11 into the reaction chamber and to introduce the fluid precursor(s) 12X into said carrier at a given time. The ALD valve can be configured to inject the precursor 12X (continuously) into the flowing carrier. Additionally or alternatively, other control means (not shown), such as, for example, mass flow controller(s), can be provided upstream of the valve 21A to modify the flow of the carrier fluid 11 during the period when the precursor 12X is injected into the supply path 21. In either situation, the injection of the precursor is performed for a short introduction (0.01 to 100 seconds, typically 0.1 seconds).

[0081] In configurations where the reactor comprises two or more feed lines 21, each said feed line is preferably equipped with an ALD valve 21A.

[0082] In some configurations, valve 21A may be a four-way valve with an additional waste line, as described in WO2018 / 234611 and / or WO2018 / 202949. Additional valves, such as three-way or four-way valves, may be introduced into supply path 21 or directly connected to fluid distribution device 100.

[0083] The reactor 200 further comprises an optionally heated compartment 22 (called a "valve block") containing one of the valves 21A and 21B, and optionally one of the corresponding precursor source(s) 12X and inert carrier source(s) 11. Each precursor source 12X can further be enclosed in a cartridge with individual thermal regulation, an exemplary implementation of such sources is described in WO2009 / 130375.

[0084] 1, reactive fluid(s) 12 are delivered into the reaction chamber via several inlets 103 connected to at least one supply path 21 and / or directly to a precursor source 12A via valve 21A. Prior to entering the reaction chamber 201, the reactive fluid(s) 12 are received via inlets 103 into a fluid distribution device 100, described below.

[0085] Reference is made to Figures 2 and 5A, which illustrate the fluid distribution device 100 in a vertical cross-cut seen from the side (Figure 2) and a horizontal cross-cut seen from above (Figure 5A). The orientation of the device 200 in Figure 2 is the same as in Figure 1. In a three-dimensional Cartesian coordinate system, Figure 2 shows a view along a longitudinal section (intersection of the fluid distribution device 100 / device 200 with the XY plane), while Figure 5A shows a view along a transverse (horizontal) section (intersection of the fluid distribution device 100 with the XZ plane). In the reaction chamber 201, substrates 10, for example disc-shaped wafers, are arranged in a so-called vertical stack (on the substrate holder 202 in Figure 1), with the sides of the substrates 10 facing each other (parallel to each other). All substrates are arranged along the longitudinal axis (Y axis) of the reaction chamber 201 / reactor 200.

[0086] The fluid distribution device 100 comprises an expansion region 101 and a transition region 102. The expansion region 101 can be considered as the "lid" of the reactor in the sense that it is the top of the reactor. The expansion region 101 can optionally be formed by a separate part that is joined to the reaction chamber by standard techniques, such as welding. Thus, in some cases, the expansion region 101 can be provided as a removable and replaceable section. The transition region 102 is formed by the region between the aforementioned lid (expansion region 101) and the reaction chamber 201, which optionally comprises some devices for efficient mixing of the joining fluid streams.

[0087] The expansion area 101 comprises sub-areas (sub-volumes) 101-1, 101-2 separated by a transition area 102, but provided under a common top cover 110. The top cover 110 may be supplied as an integral (inseparable) part of the expansion area 101, or alternatively, the top cover part 110 may be provided as a separate, removable part (e.g. for ease of maintenance). The top cover is not shown in Figures 5A-5C and 7A-7D.

[0088] Each of the aforementioned sub-regions 101-1, 101-2 comprises at least one inlet 103. Through the inlet 103, a fluid stream F1, F2 is admitted into the expansion region, specifically into the respective sub-region 101-1 and 101-2.

[0089] In a preferred configuration, each sub-region 101-1, 101-2 is given an essentially triangular shape with a horizontal cross-cut (FIG. 5A). The sub-regions 101-1, 101-2 can be provided, for example, in the shape of an isosceles triangle with at least one inlet 103 located between congruent sides and at the corner opposite the inlet of the transition region 102 (defined by the distance D1 in FIG. 5A). The distance D1 thus defines the base of the triangle.

[0090] Each subregion 101-1, 101-2 is thus established by a compartment having an interior whose distance (width) across which gradually increases in the direction of the fluid flows F1, F2, between each inlet 103 and the transition region 102 (distance indicated by d1), up to an extension width D1 (FIG. 5A). Due to the essentially triangular shape of the subregions 101-1, 101-2, the fluid propagates between the inlet 103 and the transition region 102 at the distance d1 to the extension width D1 according to an essentially spread (radial) pattern, but within the limits determined by the interiors of the compartments 101-1, 101-2.

[0091] The provision of the inlet(s) 103 to any one of the subregions 101-1, 101-2 is such that the fluid streams F1, F2 propagate through the subregions 101-1, 101-2 essentially towards each other at a distance d1 (indicated by arrows in Fig. 2, Fig. 5A). In some embodiments, the inlet(s) 103 of the subregion 101-1 is positioned opposite the inlet(s) of the subregion 101-2, thus allowing the fluid streams F1, F2 to propagate towards each other from opposite directions.

[0092] The compartments forming the sub-regions 101-1, 101-2 have an internal height h1 (FIG. 2). The height h1 is preferably essentially constant throughout the interior of the sub-region. Nevertheless, the value h1 can be varied within each sub-region 101-1, 101-2, for example to suit specific flow conditions, thereby achieving configurations with heights h1 that increase or decrease with the distance (d1) between each inlet and the transition region.

[0093] Thanks to features such as the provision of the sub-regions 101-1, 101-2 as substantially expanded ("wing-shaped") sections having a width that gradually increases to reach an expansion width D1 at a distance d1 between the inlet 103 and the transition region 102, the profile of the fluid flows (F1, F2) propagating through the sub-regions 101-1, 101-2 is laminar.

[0094] Laminar flow (or streamline flow) is defined in the context of this disclosure as a flow that is turbulent-free (without turbulent velocity fluctuations). In laminar flow, fluid layers / streams move smoothly in parallel in the absence of vortex motion, swirl, or current. For clarity, it is noted that the present invention should not be confused with any kind of Venturi application, neither in terms of construction details nor functionality. The present invention does not utilize incompressible liquids, but rather gaseous media, at high vacuum conditions and in most cases at high temperatures.

[0095] In the apparatus described herein, laminar flow is naturally maintained for both the precursor fluid flow and the inert fluid flow, the latter occurring in ALD, for example, during purge periods.

[0096] 2 shows two alternative configurations of the inlets 103. The left inlet (F1) is configured as a tube essentially perpendicular to the expansion area 101 (placed on the horizontal plane XZ). The fluid F1 (vertical downward flow) entering the expansion space through said inlet turns essentially at a right angle (90°), whereby the fluid stream F1 collides with the opposing wall and propagates further with gradually decreasing flow resistance towards the transition area 102 through the section 101-1. Alternatively, the inlet 103 for receiving the flow F1 can be located at the bottom of the section constituting the expansion area 101 (not shown), whereby the flow F1 shall be established in an upward direction.

[0097] The right inlet (FIG. 2) for receiving the flow F2 is configured as a tube with two right-angle bends. Fluid F2 entering such an inlet is forced to change its direction twice. As a result, the inertia of the fluid flow is reduced. Still, any other suitable configurations for the inlets and / or combinations of inlets and / or the location of the inlet(s) in the device are not excluded.

[0098] A transition region 102 (so-called "throat" of the device 200) is established between the expansion region 101 and the reaction chamber 201. In the device 200, the transition region 102 is essentially a region where the fluid streams F1, F2 arriving from opposite sides meet and mix. With respect to its shape and / or various structural features, e.g. 105, 106 (described further below), the transition region 102 is configured to receive and mix the fluid streams F1, F2 arriving therein via the expansion region 101, thereby forming a mixed fluid stream Fc (FIG. 2, FIG. 3A), which is further directed into the reaction chamber 201.

[0099] The transition region 102 is established by channels 102A-102B having an inlet 102A and an outlet 102B each provided as an opening of width d2 and d2', respectively (FIG. 5B). The width parameters d2 and d2' can be equal or different from each other (d2=d2' or d2<d2’またはd2> Additionally, each opening 102A, 102B has a length that extends a distance D1 that corresponds to the extension width of each sub-region 101-1, 101-2 (FIG. 5B).

[0100] Overall, the implementation of the transition region 102 ensures efficient mixing of the streams F1, F2 such that the precursor chemicals are evenly present on the deposition surface. Thus, all (wafer) substrates 10 in the reaction chamber are deposited with a uniform layer of precursor, so that the concentration of precursor is uniform across the individual substrate (side) faces and the surfaces of all substrates in the batch / reaction space. Mixing is implemented in the transition region 102 in a highly controlled manner, in the absence of vortex formation and without pressure loss, which further enables efficient purging.

[0101] Typically, the cross-sectional area of ​​the opening 102B is determined by the cross-sectional area (XZ) of the reaction chamber, while the cross-sectional area of ​​the opening 102A may be subject to design-related modifications. Thus, the width d2' of the opening 102B typically corresponds to the width of the reaction chamber 201 (FIG. 5B).

[0102] The opening 102B thus delineates the boundary between the transition region 102 and the reaction chamber 201, and thus said opening 102B may further be referred to as an entrance to the reaction chamber.

[0103] The sections 101-1, 101-2 forming the expansion region 101 can be considered as hollow extensions ("wings") on top of the body of the device 200. The sub-regions 101-1, 101-2 extend over a distance d1 between the opening 102A and the inlet(s) 103. At the distance D1, the opening 102A forms the boundary between the expansion region 101 and the transition region 102 (Figures 5A-5C).

[0104] In the exemplary layout of expansion region 101 (Figures 5A-5C), the distance between the farthest points of the subregions, established, for example, by inlet 103 (Figure 5A), is more than two or three times the distance d2 that defines the width of channels 102A-102B that form transition region 102.

[0105] In an embodiment, the channels 102A-102B have a constant cross-section (intersection with the XZ plane) over their entire height (h2). In such a case, the openings 102A and 102B are identical in their cross-sections. In some configurations, the channels 102A-102B can be configured with a cross-section (XZ) that varies over their height.

[0106] In an embodiment, the cross section (XZ) of the channels 102A-102B decreases with the distance (h2) between the inlet 102A (width d2) and the outlet 102B (width d2'). The width of the channels 102A-102B thus narrows from a value d2 to a given value d3 (FIGS. 2, 3A, 5A, 5B) and further widens to a value d2' at the inlet (102B) of the reaction chamber.

[0107] The narrowest regions of channels 102A-102B are formed by constriction region 104. In some configurations, transition region 102 thus comprises constriction region 104 (FIGS. 2, 3A-3B) having an essentially constant width d3 over the entire distance D1 (FIGS. 5A, 5B).

[0108] The narrowed region 104 is preferably formed by a slope of the (internal) sides 112, 121 (FIGS. 2, 3A) of the channels 102A-102B over a total distance D1 to a width d3. In such channels, the surfaces 112, 121 gradually slope with the distance from the corresponding inlets 102A and outlets 102B, respectively, towards the narrowed region 104 (FIG. 5B).

[0109] Additionally or alternatively, the narrowed region 104 may include an (inner) bevel of the end face, ie a narrow portion provided between the sides 112, 121 (not shown).

[0110] In some configurations, at least a portion of said channels 102A-102B have an inner surface that is inclined with a curvature. In some cases, it is advantageous for a portion of the channel to be inclined with a curvature in the distance 102A-104 (surface 112) while a portion of the channel forms an inclined plane in the distance 104-102B (surface 121) (FIGS. 2, 3A-3B). Such an arrangement makes it possible to achieve a smooth transition of the fluid flow from an essentially horizontal plane (XZ) to an essentially vertical plane (XY) as defined by the direction of the fluid flow.

[0111] In the transition region 102, the fluid streams F1, F2 arriving into the channels 102A-102B from essentially opposite directions (101-1, 101-2) meet and mix to form a mixed stream Fc. The mixing of the incoming fluids F1, F2 and the formation of the mixed stream Fc are shown diagrammatically in Figures 2 and 3A.

[0112] 3A and 3B illustrate several additional features 105, 106 provided on the fluid dispensing device 100 to facilitate mixing of the fluids F1, F2.

[0113] In some configurations, the device 100 comprises a flow shaping element 105 configured to adjust the flow direction of the fluid streams F1, F2 entering the transition region 102 to essentially direct said streams towards the reaction chamber 201. The flow shaping element 105 can be provided as an integral extension of the top cover 110 or as a separate part removably connectable to the inside of said top cover.

[0114] In cross section, the flow shaping element 105 can have shapes such as a dome shape (FIGS. 3A, 3B), a triangle, and a truncated triangle. In the fluid distribution device 100, the element 105 is preferably positioned such that its apex (the most protruding flow shaping portion) faces the reaction chamber 201. The element 105 can be provided as a continuous element having the same cross section throughout the distance D1, or alternatively, the element 105 can be provided as several shaped articles (dome shape, triangle, etc.) sequentially positioned at the aforementioned distance D1.

[0115] Element 105 prevents streams F1, F2 arriving into transition region 102 via sections 101-1, 101-2 from colliding at inlet 102A (FIG. 5B, element 105 not shown); instead, element 105 guides streams F1, F2 towards constriction region 104. Such an arrangement improves mixing rate and mixing uniformity.

[0116] Additionally or alternatively, the fluid distribution device 100 comprises a mixing device 106 arranged in the transition area 102 (FIG. 3B). In an embodiment, the mixing device comprises a shaft or rod extending (within the transition area 102) a distance D1, on said shaft being provided with several fixed blades arranged in a cross shape (FIG. 3B). The blades may be configured in cross section with a curved, sharp-edged profile. In some other embodiments, blades or similar tools (rods, sticks, fingers, etc.) may be arranged on the inner surface or cover 110 forming the transition area 102. Said tools may also be provided by other methods, for example by extrusion. Any other suitable implementation of the mixing device 106 is not excluded.

[0117] In configurations where the fluid distribution device 100 comprises the instrument(s) 105 and / or 106, the provision of the constriction region 104 in the channels 102A-102B may be omitted.

[0118] In an embodiment, a plasma generating device 107 is provided (FIG. 3A). The plasma generating device 107 can replace or complement the mixing device 106. In the latter case, the plasma electrode(s) can be integrated into the structure of the mixing device 106. In terms of design features, the aforementioned plasma generating device 107 is constructed and / or connected to the inner wall of the reactor in a similar manner as described for the mixing device 106. The plasma generating device 107 comprises or consists of at least one plasma source, such as, for example, a plasma electrode. A plasma source is defined in the context of the present disclosure as a device capable of generating and / or emitting plasma from a bypass fluid, preferably a gas. Furthermore, the device 200 can include one or more devices for generating plasma located outside the reaction chamber, such as a device(s) for generating inductively coupled plasma. Such device(s) preferably include a high-frequency induction coil and a high-frequency power source (not shown).

[0119] In some configurations, the plasma generation device 107 comprises or consists of at least one plasma antenna. Said plasma antenna(s) may be provided in the form of individual rods extending a distance D1 (as described above for the mixing device 106) or as one or more "fingers" disposed on the interior surface or cover 110 forming the transition region 102.

[0120] The mixed fluid flow (Fc) comprising the mixed streams F1, F2 in the transition region is further directed into the reaction chamber 201. The fluid flow established at the reaction chamber inlet 102B (FIG. 3A) and propagating through said reaction chamber is shown in FIGS. 2 and 3A as flow F. The flow F established at the reaction chamber inlet and propagating through the entire length of said reaction chamber between the substrates 10 is a laminar flow.

[0121] In the reactor 200, the propagation of the fluid streams F1, F2 through the transition region 102 on their way from the expansion region 101 (101-1, 101-2) to the reaction chamber 201 is accompanied by a change in the direction of the fluid streams as mentioned above. By provision of the fluid distribution device 100 according to the embodiment and thanks to the relatively flat reaction chamber 201 provided as an enclosed space containing a batch of substrates arranged in a vertical stack, the formation of jets, vortices and / or swirls in the fluid pattern propagating through the transition region 102 is prevented.

[0122] The reactor 200 is constructed in such a way that the flow of fluids through each of its compartments is maintained laminar. The fluids, shown for clarity as streams F1, F2, Fc, F, move through each of the respective compartments 101-1, 101-2, 102, 201 in regular paths, in the absence of fluctuations or irregularities, so that the flow velocity, pressure, acceleration, and other flow characteristics remain essentially constant at any point within each imaginary cross-section of the fluid stream moving through each particular compartment. Although the above-mentioned parameters remain essentially constant within each (imaginary) cross-cut across the fluid path in the direction of the tip and fluid flow, some parameter values ​​(pressure, flow velocity) may decrease over the distance defining the entire fluid path from the inlet 10 towards the substrate 10 and / or as they propagate through the reaction chamber 201.

[0123] The transition region 102 ("throat") is implemented in such a way as to allow efficient (convective and diffusive) mixing of the fluids under laminar flow conditions. In said transition region, the fluid streams F1, F2 arriving from essentially opposite directions are redistributed and remixed (Fc) to form a flow F parallel to the flow direction Y corresponding to the longitudinal axis Y of the deposition apparatus in the absence of turbulent eddies or jets. The laminar mixing in the transition region 102 is achieved by the characteristic configuration of the fluid distribution device 100 and the reaction chamber 201.

[0124] The streams F1, F2 meet and mix in a transition region 102 having a boundary D1 with the expansion region 101 (FIGS. 5A-5C). The mixed stream Fc propagates in the form of a flow F into a reaction chamber 201 configured as a substantially flat elongated body. The reaction chamber 201 preferably has a constant cross-section (XZ plane) throughout its length defined by the Y axis (from its boundary with the transition region shown at 102B in FIG. 5B to the exhaust).

[0125] The flow F established at the inlet of the reaction chamber therefore propagates between the sides of the substrate 10 through said length of the reaction chamber with essentially uniform velocity.

[0126] The reactor 200 according to the embodiment allows for uniform deposition of a coating film on all substrate surfaces simultaneously by establishing a laminar flow (F) of the precursor fluid 12 through the entire length of the reaction chamber 201. In laminar flow conditions, the precursor fluid 12 propagates between the sides of the substrate 10 with an essentially uniform velocity at the leading edge. The apparatus 200 allows for avoiding deposition failures common in conventional chemical vapor deposition reactors due to irregular deposition rates on the substrates during stacking (caused by non-uniform and / or turbulent precursor fluid flow between the substrates).

[0127] In the reactor 200, a uniform concentration of precursor (essentially the same amount of precursor molecules in a given volume) is achieved at the inlet (102B, cross section XZ) of the reaction chamber. The precursor concentration is maintained essentially uniform as the precursor fluid propagates between the substrates 10 through the entire length of the reaction chamber in the form of a steady laminar flow F. Thus, all sides of the substrate 10 become deposited with a film having the same thickness and a uniform / even distribution of precursor molecules across the deposition surface(s).

[0128] Placing the substrates side-by-side and close to each other in the reaction chamber (but leaving gaps between them) contributes to establishing a laminar flow between the aforementioned substrates 10. Indeed, reaction chambers can be provided in different sizes to dimensionally accommodate substrates of various standards, such as, but not limited to, disc-shaped wafer substrates having diameters in the range of 25-300 mm. The reaction chamber 201 (and the entire reactor facility 200 accordingly) can be further modified to incorporate substrates with diameters greater than 300 mm.

[0129] When a disk-shaped substrate 10 is utilized, the exhaust end of the reactor 200 / reaction chamber 201 can be curved or arcuate (FIG. 6A).

[0130] To prevent the precursor chemicals from mixing in the fluid distribution device 100 before they reach the transition region 102 and to maintain a steady flow at a uniform rate through the reactor 200, the following arrangements can be made.

[0131] During the delivery of precursor chemicals to one side of the reaction chamber (e.g. via the first sub-region 101-1), said chemicals are introduced (injected) via a three-way or four-way valve into a stream of inert fluid that flows continuously through the feed path(s) 21 into the deposition reactor. At the same time, there is a constant flow of inert fluid 11 from the other direction (e.g. via the second sub-region 101-2). In ideal conditions, the pressure in the feed paths on both sides (101-1, 101-2) is maintained essentially the same (e.g. 5 mbar). However, the pressure in the feed paths changes the moment the precursor chemicals are injected from the precursor source into said feed paths 21 due to the higher pressure (e.g. 10 mbar) that is usually maintained in the vessel containing the precursor chemicals. This can be compensated for by several methods, such as: - Rapid flow changes in the precursor injection delivery path using a mass flow controller or another suitable regulating device; - pressure compensation in the precursor injection supply line by increasing the flow rate in the supply line on the other side (the inert fluid supply) to match the increased pressure in the precursor injection supply line; and - Rapid pressure changes (increase or decrease) in the precursor injection supply path using an additional valve in parallel to the mass flow controller.

[0132] Reference is made to Figures 4A and 4B, where Figure 4A is intended to provide one of ordinary skill in the art with insight into three-dimensional fluid propagation in reactor 200, and Figure 4B illustrates various configurations of expansion volume(s) 101. The reference coordinate system is specified in a three-dimensional Cartesian coordinate system.

[0133] The diagram of Figure 4A combines a horizontal cross-cut view of the fluid distribution device 100 (viewed from above as shown in Figure 5A) with a vertical cross-cut view of the reaction chamber 201 (viewed from the side as shown in any one of Figures 1, 2, 3A or 3B).

[0134] Figure 4A shows the reaction chamber 201 as an intersection with a longitudinal section (XY) along the longitudinal axis (Y-axis) of the deposition device 200. The sub-regions 101-1, 101-2 forming the expansion region 101 are shown as an intersection with a horizontal section (XZ) essentially perpendicular to the longitudinal axis Y of said deposition device. Section XZ is shown in Figure 4B with reference symbol P1. Said section P1 is further considered as the plane in which the sub-regions 101-1, 101-2 are arranged.

[0135] 4B further illustrates the orientation of the essentially flat elongated vessel forming the reaction chamber 201 with respect to plane 1 (P1). The reaction chamber 201 is thus illustrated in FIG. 4B as an intersection with a longitudinal cross section (YZ) along the longitudinal axis (Y-axis) of the deposition apparatus 200.

[0136] The cross section (YZ) forms a plane of symmetry of the sub-regions 101-1, 101-2 along the longitudinal axis (Y-axis) of the deposition apparatus 200. Except for a few minor details (e.g. the configuration of the inlet 103), the plane YZ bisects the apparatus 200 into halves that are mirror images of each other, with each such half containing sub-regions 101-1, 101-2.

[0137] The plane of symmetry of the sub-regions 101-1, 101-2 along the longitudinal axis of the deposition device 200 is indicated in FIG. 4B with the reference symbol P2.

[0138] Configuration (i) shown in Figure 4B corresponds to the embodiment shown in Figures 5A-5C. In a reactor according to configuration (i), the fluid distribution device 100 is configured such that the direction of the fluid streams F1, F2 propagating through the expansion region 101 (101-1, 101-2) is essentially perpendicular to the direction of the fluid flow F propagating through the reaction chamber 201.

[0139] In configuration (i), the horizontal plane P1 is therefore perpendicular to the vertical plane P2.

[0140] In (i) and (iii), Figure 4B shows an alternative configuration of the reactor 200, where the compartments 101-1, 101-2 are not on a plane P1, but instead each compartment is inclined from said plane P1 by a given angle α (alpha). The inclined plane of each compartment / sub-region 101-1, 101-2 is indicated with the reference symbol P1' (ii, iii in Figure 4B).

[0141] Thus, in configurations (ii, iii), sub-regions 101-1, 101-2 are each disposed in a cross-section P1', with each such plane P1' being inclined at a predetermined angle relative to the cross-section (P1). For clarity, Figure 4B shows plane P1 as a dashed box, while the inclined plane P1' has a solid outline.

[0142] The tilt angle (alpha) can be provided in the range of 0 to 180 degrees, or more preferably 5 to 45 (95 to 135) degrees from the XZ plane. In FIG. 4B, the right angle α1 (alpha1) and the right angle α2 (alpha2) together define a range of 0 to 180 degrees. To implement configurations (ii, iii), the tilt boundaries of each sub-region should be aligned with the boundaries D1 on each side of the transition region 102 as described above.

[0143] More preferably, the inclined plane P1' has mirror symmetry.

[0144] In all configurations described above, the fluid distribution device 100 is configured such that each fluid stream F1, F2 bends in the transition region 102 from cross section P1, P1' (expansion region 101) to cross section P2 (reaction chamber 201) while maintaining laminar flow in all aforementioned sections 101, 102, 201. Plane P2 (YZ) is further defined as the plane of symmetry of the sub-regions 101-1, 101-2 along the longitudinal axis (Y-axis) of the deposition apparatus 200.

[0145] Planes P1, P2 are further shown in Figures 5B, 5C.

[0146] In the configuration described above, the substrates 10 are placed such that their sides are aligned with the aforementioned plane P2 (YZ). Thus, in a batch of substrates arranged in a vertical stack and placed in a reaction chamber, all substrates are parallel to the aforementioned plane P2.

[0147] 6A and 6B illustrate an embodiment in which the reactor 200 further comprises an exhaust assembly arranged to redirect the exhaust flow exiting the reaction chamber 201. The exhaust assembly is formed by an exhaust conduit 41 and an enclosure 42 configured to house the conduit 41. The exhaust assembly is connectable to an exhaust manifold 40 configured as at least one tube with or without a bend. The bend can be, for example, a J-bend. The manifold 40 further connects the reactor to a vacuum pump foreline 401 via a feed-through device 43 (vacuum pump not shown). The arrangement of the manifold tube(s) 40 for the reactor 200 shown in FIGS. 6A, 6B is exemplary and may vary depending on the particular implementation.

[0148] Exhaust assemblies 41, 42 advantageously replace typical hard exhaust pipes with bends (eg, J-bends) attached directly to the reaction chamber (not shown).

[0149] In FIG. 6A, the upper dashed box shows the exhaust end of the reactor 200 / reaction chamber 201 without the manifold 40. At the exhaust end, the reactor is provided with an exhaust conduit 41 with an outlet opening 41A. An exhaust enclosure 42 configured as a "cup" with a diameter larger than that of the exhaust conduit 41 is placed around said conduit. In the configuration of FIG. 6A, the cup-like enclosure 42 is mounted on the conduit 41. The enclosure 42 has an opening 42A, optionally configured as an orifice or orifice pipe, located in its sidewall. The enclosure 42 mediates the connection between the manifold 40 and the reaction chamber 201 (lower dashed box). The hard bottom of the enclosure 42 forms a "dead end" for the exhaust stream (Fex) exiting the reaction chamber, forcing the exhaust stream into the manifold 40 via the opening / orifice 42A located in the sidewall of said enclosure. The flow (exhaust flow Fex) discharged from the reaction chamber 201 through the exhaust conduit 41 (upper dashed box in FIG. 6A) hits the hard bottom of the enclosure 42 (exhaust cup 42 in FIG. 6A), from where said exhaust flow is forced to bend inside the enclosure 42. The elements 41, 42 are configured to support the exhaust flow bending at a predetermined angle, preferably a minimum of 90 degrees. In the configuration shown in FIG. 6A, the bend of the exhaust flow is about 180 degrees (upper and lower dashed boxes in FIG. 6A) in a direction essentially opposite to the direction from which said flow arrived, i.e., towards the reaction chamber. The 180 degree bend occurs inside the enclosure 42. Thus, the exhaust flow Fex turns around ("U-turn") in the exhaust conduit 41 and exits the enclosure 42 through the opening(s) / orifice(s) 42A and enters at least one manifold tube 40. In the manifold tube(s) 40 described above, the flow direction may be essentially perpendicular to the direction in / through the exhaust conduit 41. For clarity, the cup 42 has been omitted from the upper dashed box (FIG. 6A).

[0150] FIG. 6B shows an alternative embodiment of the exhaust assembly 41, 42. Herein, the exhaust conduit 41 is established by the inclination of the bottom surface of the reaction chamber 201 across the width of the reaction chamber (Z axis) to form a gradually narrowing channel with an elongated outlet opening or gap 41A (XZ plane). Said channel is enclosed in an elongated enclosure space 42 adapted to fit the shape of the reaction chamber 201 at its bottom. The embodiment can be considered as a reaction chamber 201 with a "double" bottom, where a bend, such as a U-turn, is formed by an intermediate wall established by the conduit 41 in the enclosure 42. In this configuration, the exhaust flow (Fex) bends at a predetermined angle, such as at least a 90 degree bend, across the end of the entire reaction chamber that is in the enclosure 42. In some configurations, said bend is about a 180 degree bend.

[0151] The U-turning exhaust flow can be at least partially confined to the XY plane, for example with some flow guides. In this way, the uniformity of the exhaust across the width of the reaction chamber in the Z direction can be improved. To further optimize the flow parameters, the dimensions of the components forming the vacuum pump foreline, such as the feedthrough arrangement 43 (FIG. 6A), can be adjusted.

[0152] 6B thus shows a configuration with an exhaust manifold 40 with two tubes located on opposite sides of the reactor 200 / reaction chamber 201. Depending on the particular design and its optimization, it is possible to provide a manifold with one tube or any other number of tubes.

[0153] The opening / orifice 42A may be connected to a corresponding manifold tube 40 by a flange or collar. In such a case, the outlet opening of the orifice 42A facing the manifold tube 40 preferably has essentially the same diameter as the aforementioned manifold tube. In some alternative configurations, the orifice 42A may be configured to fit inside the manifold tube 40, thereby creating a sliding connection (lower dashed box in FIG. 6A). In both configurations described, the connection between the cup 42 and the manifold 40 may be further secured, for example, by welding.

[0154] The advantage of the exhaust assembly with flow bends described above is a compact design without compromising on flow conditions. The exhaust conduit 41 and the enclosure 42 together form a passage in which the exhaust flow (Fex) leaving the reaction chamber 201 via the exhaust conduit 41 turns around the wall forming said conduit 41, for example with a turn of about 180 degrees, while remaining inside the enclosure 42. From the enclosure 42, via an opening 42A arranged in at least one side wall thereof, the exhaust flow is further led into the exhaust manifold 40. The exhaust flow turns 180 degrees with virtually no pressure loss (as is often the case with conventional exhaust pipes with a bend of about 90 degrees with a centerline radius equal to or smaller than the diameter of the pipe, the so-called "short radius elbow"). Compared to known solutions such as the aforementioned short radius elbow solution, the exhaust assembly 41, 42 allows to reduce the overall length of the reactor 200.

[0155] Reference is now made to Figures 7A-7D, which illustrate various embodiments of a thin film deposition system 500. The system 500 is a modular system comprising several deposition apparatus 200 as described above, connected in series and / or in an array(s). A series connection (series connection) is illustrated in Figures 7A and 7B (500A, 500B), which show several reactor units 200 arranged in series to form a row. An array connection ("parallel" connection) is illustrated in Figure 7C (500C). Each reactor unit 200 thus constitutes an individual module within the system.

[0156] The system 500 preferably further comprises at least one substrate handler (not shown) for loading the substrate 10 into the substrate holder 202 and / or the reaction chamber 201, removing the substrate, and optionally transporting the substrate between the reactor units 200. The connections between the reactor units 200 in the system 500 are established by fluid feed lines 21 and / or manifolds that supply precursor fluids into the individual deposition reactors. The reactor units 200 are preferably arranged such that a given precursor compound provided as any one of 12A, 12B, 12C, 12D, 12E, 12G, and 12F is led from a precursor source into at least two reactor units that are optionally adjacent to each other. In an embodiment, the precursor source is a common precursor source that supplies the same precursor (common precursor) into at least two reactor units. In an embodiment, at each junction between adjacent reactor units 200, a common precursor chemical is directed to each reactor unit via a feed path manifold. The junctions between the reactor units 200 can be considered as several inlets 103, provided in different reactor units, but arranged adjacent to each other. The junctions are established between at least two reactor units (FIGS. 7A, 7B, 7D). An arrangement with four reactors at each junction is shown in FIG. 7C. The precursor(s) can be fed simultaneously or sequentially into the aforementioned at least two reactor units. In an embodiment, the feeding of a particular precursor chemical, e.g. 12A, into the reactor units 200 at a given junction is synchronized in the system 500 to actuate a particular set of valves 21A to feed the aforementioned precursor chemical 12A from the associated precursor source or sources into the reactor units at all the aforementioned given junctions simultaneously according to a particular reaction design. As an example, in the configuration shown in FIG. 7B, the junction between the first and second reactor units and the junction between the fourth and fifth reactor units (numbered from left to right) receive an exemplary precursor chemical 12B. In an embodiment, the system 500B is synchronized such that the precursors 12B are simultaneously delivered into the inlets 103 of the reactor units 200 that form the aforementioned junctions.Synchronization is advantageously accomplished via a control system, described further below.

[0157] It may be feasible to connect a common precursor source to 2-10 modules, and when constructing arrays with 10 or more modules, it may be preferable to utilize several common precursor sources.

[0158] In system 500 , the reactor units 200 are further arranged such that each deposition reactor is supplied with at least two different precursors via inlets 103 .

[0159] A combination of sequential and array connections can be established, for example, by arranging the modules provided in system 500A and / or 500B in several rows and connecting the modules to form an array. The reactor units 200 can be further arranged in a ring-like arrangement to form system 500D (FIG. 7D). The number of units 200 in the ring and the corresponding shape of the ring (e.g., hexagonal as shown in FIG. 7D) can be adjusted for a particular deposition system.

[0160] System 500A (FIG. 7A) utilizes two precursors 12A and 12B. As an example, if precursor 12A is trimethylaluminum (TMA) and 12B is water, effective deposition of aluminum oxide (12A+12B) can be implemented simultaneously in several modules 200. Purging with an inert fluid can be implemented via the above-mentioned three-way and four-way valves 21A (e.g., ALD valves) connected to inlet line(s) 21 or inlet manifold(s).

[0161] Systems 500B, 500C, and 500D (FIGS. 7B, 7C, and 7D) allow for simultaneous operation of multiple reactor units 200, whereby individual deposition reactors, either sequentially (500B) or in an array (500C, 500D), can be configured to deposit separate coatings onto a substrate 10. As an example, system 500B is configured to deposit the following coatings onto a substrate: 12A+12B, 12B+12C, and 12A+12C.

[0162] As a note, the same coating is deposited on all substrates 10 in a batch placed in the reaction chamber of an individual reactor unit 200 (module). Thus, the provision of separate coatings is coordinated for each module.

[0163] System 500C comprises several arrays, each of which comprises four interconnected reactor units 200. All units in an array are supplied with at least one common precursor (12A, 12B, 12C, with a supply source in the center of each array). As an example, the common precursor is the first precursor. In practice, the common precursor can be provided as the first precursor, the second precursor, or any other subsequent precursor. Furthermore, each reactor unit 200 in the array is supplied with another precursor (e.g., a second precursor) different from the first precursor to initiate the chemical vapor deposition reaction. If the system embodied as 500C contains a row of two or more arrays arranged, for example, in a honeycomb arrangement (not shown), both the first and second precursors can be considered as "common" precursors with respect to the different reactor units 200 in the honeycomb arrangement.

[0164] As an example, the system 500 may comprise several reactor units 200 for deposition of metal oxides and several reactor units for deposition of metals and / or metal nitrides. The system may further comprise a substrate loader (not shown) for loading and unloading substrates into the substrate holders or reaction chambers and optionally transporting the substrates between the deposition reactors.

[0165] 7A-7D should not be considered limiting, but rather provide guidance to one skilled in the art to implement system 500 in any suitable configuration based on the examples provided. Similarly, any suitable combination of precursors may be utilized.

[0166] 8 is a block diagram illustrating the control system 300 of the apparatus 200 and / or the system 500. The system 300 comprises at least one processing unit (CPU, 301) in communication with a central control space 305 configured to manage several reactor units 200 in the system 500. Said central control space 305 and optionally processing unit 301 are configured to communicate with a human machine interface (HMI) 302 and associated software. In a basic system, set process parameters are programmed with software and instructions are executed on the HMI terminal 302 and communicated directly or remotely to the central control space 305 and optionally (not shown) processing unit 301 via line 307. Any one of the units 301, 305 comprises at least one microprocessor for executing program code stored in memory, dynamic and static random access memory, I / O modules, A / D and D / A converters, and power relays.

[0167] The processing unit 301 transmits and / or receives signals to the valve controller 321 (which regulates the operation of the valves 21A, 21B), transmits signals to the heater controller 322 (which regulates the operation of the heater 204 and / or the precursor source cartridge heater), reads the output values ​​of the thermocouples 323, the pressure transducers 324 and the switches 326 (e.g. overheat switches), and communicates bidirectionally with the mass flow controllers and / or sensors 325, the substrate loader 327, the control means 328 of the plasma generator 107, and the ozone generator 320 and associated control means. The signal transmission paths between the above-mentioned devices 321-327 and the processing unit 301 are shown diagrammatically in FIG. 8 at 306. The dashed line 310 indicates the boundary between the processing unit 301 and the parts of the deposition reactor 200. Arrows (designated with numerals 311) indicate communication lines (one-way or two-way) between processing unit 301 and modules 321-329, the direction of the arrows is exemplary and may vary depending on the configuration.

[0168] In an embodiment, the program code of the HMI terminal 302 and the processing unit 301 is updated from a fixed remote access point 304 via wired or wireless communication links 303, 309.

[0169] Within the control system 300, a central control space 305 is further provided for managing several reactor units 200 and optionally substrate handle(s) in the system 500 via wired or wireless communication links 308. In the system 500, the modules 200 can be connected to the central control space 305 in such a way as to enable synchronized delivery of precursor chemicals into various adjacent reactor units (at interfaces as described above) and integration of various deposition processes, such as ALD processes, into an automated wafer processing line.

[0170] The control system 300 can be provided as an integrated or stand-alone CPU solution with a user interface and associated software. The software management functions for the processing unit 301 and / or the central control unit 305 may further include implementation of local and / or remote control(s), monitoring of the several deposition reactor modules, as well as emergency power control(s), etc.

[0171] The invention further relates to a method for depositing material onto a substrate surface in a thin film deposition apparatus, the method advantageously making use of an apparatus 200 having a fluid distribution device 100 according to the embodiment described above.

[0172] In an embodiment, the method comprises: To obtain a thin film deposition apparatus 200 comprising a reaction chamber for accommodating a substrate 10 arranged with their sides adjacent to each other, and a fluid distribution device 100 comprising an extension region 101 and a transition region 102 including sub-regions 101-1, 101-2; Establishing fluid flows F1, F2 into the subregions 101-1, 101-2 via at least one inlet 103 arranged in each subregion such that the fluid streams F1, F2 propagate through the subregions in a direction essentially towards each other, wherein at least one fluid stream F1, F2 comprises at least one precursor 12X, 12A, 12B, 12C, 12D, 12E, 12F, 12G; mixing the fluid streams F1, F2 in a transition region 102, thereby forming a precursor fluid comprising at least one precursor as described above, and further directing the precursor fluid into a reaction chamber 201; depositing material on a substrate surface by establishing a laminar flow F of a precursor fluid at an inlet of a reaction chamber and maintaining said laminar flow as said precursor fluid propagates between the sides of the substrate 10 through the length of said reaction chamber; Includes.

[0173] In the above described method, the precursor fluid propagates between the substrates 10 with an essentially uniform velocity at the tip.

[0174] The invention further relates to a method for uniform distribution of a fluid in an apparatus for thin film deposition, the method advantageously making use of an apparatus 200 comprising a fluid distribution device 100 according to the embodiment described above.

[0175] In an embodiment, the method comprises: to obtain a thin film deposition apparatus 200 comprising a reaction chamber 201 for accommodating a substrate 10 arranged with their sides adjacent to each other, and a fluid distribution device 100 comprising an extension region 101 and a transition region 102 including sub-regions 101-1, 101-2; establishing fluid flows F1, F2 into the subregions 101-1, 101-2 via at least one inlet 103 disposed in each subregion such that the fluid streams F1, F2 propagate through the subregions in a direction essentially towards each other; mixing the fluid streams F1, F2 in a transition region 102; directing the mixed fluid stream into the reaction chamber 201 such that a flow F established at the inlet of the reaction chamber and propagating between the sides of the substrate 10 through said length of the reaction chamber is laminar; Includes.

[0176] Furthermore, the present invention relates to the use of the thin film deposition apparatus 200 according to an embodiment for depositing a thin film of a coating material on a substrate surface. In an embodiment, the apparatus 200 is applied in a chemical vapor deposition process, in particular an atomic layer deposition (ALD) process.

[0177] Example 1 The examples illustrate demonstration runs conducted to demonstrate the performance of the thin film deposition apparatus 200 in terms of establishing a laminar flow pattern avoiding turbulence. An exemplary AB-type ALD reaction was conducted at 300° C. for deposition of aluminum oxide (Al2O3) from two precursors, namely trimethylaluminum (TMA) and water, delivered sequentially into the reaction chamber. The amount of at least one precursor chemical supplied to said reaction was limited to such an extent that said chemical ended up approximately halfway across the wafer(s) as it propagated through the reaction chamber and between the wafer substrates (14 wafers).

[0178] FIG. 9 shows thickness maps (nm) of aluminum oxide coatings obtained from TMA introduction (0.1 seconds) on a batch of 14 wafer substrates 10 arranged as follows: 9A is the thickness map (nm) of the aluminum oxide coating on the second (2 nd ) slot, 9B shows a wafer in a second slot on the wall of the reaction chamber opposite the door, and 9C shows a wafer in an eighth slot on the door side. th ) and 9D is the eighth wafer on the wall side. 9A and 9B show the coating results of wafers in the batch that are placed closer to the sides of the reaction chamber, while 9C and 9D show the results of wafers placed in the middle of the batch. The flow direction of the precursor fluid (F) propagating through the reaction chamber is indicated by arrows (from bottom to top). All wafers had an Al2O3 coating (partially) deposited on both sides (one side is shown in maps A-D of Fig. 9).

[0179] FIG. 9 shows clear sharp contours between the coated areas (darker areas) on wafers A-D and the uncoated areas (lighter areas) on said wafers. The contours are uniform as they delineate essentially the same sized coated areas on all wafers (edge ​​slots and center slots), indicating equal propagation of precursor fluid among all substrates in the substrate chamber. The uniform coverage of all substrate wafers indicates the absence of turbulence. The precursor chemicals propagating with the precursor fluid through the reaction chamber are equally deposited on all wafers in the batch, which is a result of efficient mixing at the transition region of the fluid distribution device 100 and the establishment of laminar flow conditions in the reaction chamber to achieve essentially uniform precursor fluid velocity at its leading edge.

[0180] FIG. 10 shows a thickness map (nm) of an aluminum oxide coating deposited under similar conditions as those described above, but with a dose of precursor chemicals adjusted to cover the entire wafer substrate. The reaction conditions were not further optimized. According to FIG. 10, the non-uniformity achievable with the reaction described above corresponds to less than 1% even without further optimization. Thus, in the map shown in FIG. 10, a total of 81 points were measured with the ellipsometer device, corresponding to a non-uniformity of only 0.54%.

[0181] It will be understood by those skilled in the art that the embodiments described in this disclosure can be adapted and combined as desired. Accordingly, this disclosure is intended to cover all possible modifications of the apparatus and systems described herein that are recognizable by those skilled in the art within the scope of the appended claims.

Claims

1. A fluid distribution device (100) for a thin film deposition apparatus, said fluid distribution device (100) comprising: an expansion region (101) comprising subregions (101-1, 101-2) for receiving fluid streams (F1, F2) through at least one inlet (103) arranged in each subregion, whereby said fluid streams (F1, F2) propagate through said subregions in a direction essentially towards one another; a transition region (102) in which the fluid streams (F1, F2) arriving there via said subregions (101-1, 101-2) mix; A device comprising: each sub-region (101-1, 101-2) has an interior whose distance across it increases in cross section in the direction of fluid flow (F1, F2) between each inlet (103) and said transition region (102) to an expansion width (D1); A fluid distribution device (100), wherein the transition region (102) is configured such that the mixed fluid stream (F) exits the expansion region (101) as a laminar flow.

2. The fluid distribution device (100) of claim 1, wherein the fluid distribution device (100) is configured to be connected to a reaction chamber (201).

3. The fluid distribution device (100) of claim 2, wherein the transition region (102) is configured such that the mixed fluid stream (F) is introduced into the reaction chamber (201) as a laminar flow.

4. The fluid distribution device (100) of claim 2 or 3, wherein the transition region (102) is configured such that the mixed fluid stream (F) is introduced into the reaction chamber (201) as a laminar flow.

5. The fluid distribution device (100) of any one of claims 2 to 4, further comprising a flow shaping element (105) configured to adjust a flow direction of the fluid streams (F1, F2) entering the transition region (102) essentially towards the reaction chamber (201).

6. 6. The fluid distribution device (100) of claim 5, wherein the flow shaping element (105) is configured to prevent fluid streams (F1, F2) arriving within the transition region (102) from colliding at the inlet (102A).

7. The fluid distribution device (100) of any one of claims 1 to 6, wherein the transition region (102) is a channel (102A-102B) with an inlet (102A) and an outlet (102B) provided as an opening having a width (d2, d2') and a length extending a distance (D1) corresponding to the expanded width of each sub-region (101-1, 101-2).

8. The fluid distribution device (100) of any one of claims 1 to 7, wherein the transition region (102) further comprises a narrowing region (104) formed by a slope of the sides (112, 121) of the channels (102A-102B) to an essentially constant width (d3) over the distance (D1).

9. The fluid distribution device (100) of any one of claims 1 to 8, wherein at least some of the channels (102A-102B) have sides that are inclined with a curvature.

10. A fluid distribution device (100) as described in any one of claims 1 to 9, wherein the sub-regions (101-1, 101-2) of the expansion region (101) are arranged in a primary cross section (P1) essentially perpendicular to a longitudinal axis (Y) of the thin film deposition apparatus.

11. The fluid distribution device (100) of any one of claims 1 to 10, wherein the direction of the fluid streams (F1, F2) propagating through the expansion region (101) is essentially perpendicular to the direction of the fluid flow (F) propagating through the reaction chamber (201).

12. A fluid distribution device (100) according to any one of claims 1 to 9, wherein the sub-regions (101-1, 101-2) of the expansion region (101) are each arranged in a secondary cross section (P1'), each secondary cross section (P1') being inclined at an angle (alpha, α) relative to the primary cross section (P1).

13. The fluid distribution device (100) of claim 12, wherein the secondary cross section (P1') is of mirror symmetry.

14. A fluid distribution device (100) according to any one of claims 1 to 13, wherein in the transition region (102), each fluid stream (F1, F2) bends from a primary cross section (P1) or a secondary cross section (P1') towards a tertiary cross section (P2) defined as a plane of symmetry of the sub-regions (101-1, 101-2) along a longitudinal axis (Y) of the thin film deposition apparatus.

15. The fluid distribution device (100) of any one of the preceding claims, wherein said sub-regions (101-1, 101-2) have an essentially constant height (h1) throughout their interior.

16. The fluid distribution device (100) of any one of the preceding claims, further comprising a mixer (106) in the transition region (102).

17. The fluid distribution device (100) of any one of the preceding claims, further comprising a plasma generator (107).

18. The fluid distribution device (100) of claim 17, wherein the plasma generator (107) is disposed in the transition region (102).

19. A thin film deposition apparatus (200), comprising: - a reaction chamber (201) for accommodating a number of substrates (10) arranged side by side with each other; - a fluid distribution device (100) according to any one of claims 1 to 18, A thin film deposition apparatus (200) comprising: The thin film deposition apparatus (200), wherein the transition region (102) is established at the inlet of the reaction chamber and is configured to further direct the mixed fluid stream into the reaction chamber (201) such that flow (F) propagating through the length of the reaction chamber and between the sides of the multiple substrates (10) is laminar.

20. 20. The thin film deposition apparatus (200) of claim 19, wherein the reaction chamber (201) has a constant cross-section throughout its length.

21. The thin film deposition apparatus (200) of claim 19 or 20, wherein the transition region (102) is established by a channel (102A-102B) having an inlet opening (102A) and an outlet opening (102B), the inlet opening and / or the outlet opening having the same cross section as the reaction chamber (201).

22. The thin film deposition apparatus (200) of any one of claims 19 to 21, wherein an interior of the reaction chamber (201) is dimensionally adapted to accommodate a predetermined number of the substrates (10) therein.

23. The thin film deposition apparatus (200) of any one of claims 19 to 22, wherein the thin film deposition apparatus (200) is configured to deposit a coating film on all substrate surfaces simultaneously.

24. The thin film deposition apparatus (200) according to any one of claims 19 to 23, further comprising an exhaust conduit (41) and an enclosure (42) disposed essentially around the exhaust conduit (41) and receiving fluid flowing from the reaction chamber (201) through the conduit (41), the exhaust conduit (41) and the enclosure (42) forming an exhaust assembly configured to redirect an exhaust flow (Fex) exiting the reaction chamber (201).

25. 25. The thin film deposition apparatus (200) of claim 24, wherein the exhaust conduit (41) and the enclosure (42) form a passage through which an exhaust flow (Fex) leaving the reaction chamber (201) through the exhaust conduit (41) remains within the enclosure (42), bends around one or more walls forming the conduit (41), and is further directed into an exhaust manifold (40) through an opening (42A) disposed in at least one side wall of the enclosure (42).

26. The thin film deposition apparatus (200) of any one of claims 19 to 25, wherein the thin film deposition apparatus (200) is configured as an apparatus for chemical vapor deposition reactions.

27. The thin film deposition apparatus (200) of any one of claims 19 to 26, wherein the thin film deposition apparatus (200) is configured as an apparatus for atomic layer deposition (ALD).

28. The thin film deposition apparatus (200) of any one of claims 19 to 27, wherein the thin film deposition apparatus (200) is used for depositing a thin film of a coating material onto a substrate surface.

29. A thin film deposition system (500A, 500B, 500C, 500D) comprising several thin film deposition apparatus (200) according to any one of claims 19 to 28, connected to each other in series and / or in an array.

30. 30. The system of claim 29, wherein the thin film deposition apparatus (200) is configured to receive a common precursor compound in at least two of the apparatus.

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