Electrostatic chuck, film forming device, adsorption method, film forming method, method for manufacturing electronic device, and method for manufacturing electrostatic chuck

Abstract

To suppress arcing between an electrode for a heater and an electrode for electrostatic adsorption in an electrostatic chuck having the heater.SOLUTION: An electrostatic chuck for adsorbing an adsorption object by electrostatic force includes: a base material made of sintered ceramic; an electrostatic chuck unit including an adsorption electrode provided on a first surface of the base material therein; and a heater unit including a heater electrode provided on a second surface opposite to the first surface of the base material and an insulating layer made of an insulator formed on the heater electrode therein. The base material satisfies at least any of low porosity, a high withstand voltage, and high volume resistivity with respect to the insulator constituting the insulating layer of the heater unit.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to an electrostatic chuck, a film forming apparatus, an adsorption method, a film forming method, a method for manufacturing an electronic device, and a method for manufacturing an electrostatic chuck.

Background Art

[0002] In the manufacture of an organic EL display device (organic EL display), when forming an organic light emitting element (organic EL element; OLED) that constitutes the organic EL display device, a vapor deposition material evaporated from a vapor deposition source in a vacuum chamber of a film forming apparatus is passed through a mask on which a pixel pattern is formed, and is vapor deposited on a substrate held in the vacuum chamber to form an organic layer or a metal layer. In the vacuum chamber, the substrate is held by a substrate holder. The substrate holder holds the substrate by supporting the peripheral portion of the lower surface of the substrate so as not to damage the organic layer or the electrode layer formed on the lower surface of the substrate, but the central portion not supported by the substrate holder bends due to the weight of the substrate. As a means for suppressing this bending, an electrostatic chuck is used. The electrostatic chuck has an insulating base material and an electrode disposed on the base material, and by applying a voltage to the electrode in a state of being close to or in contact with the upper surface of the substrate, charges of opposite polarity are induced on the surface of the substrate, thereby applying an electrostatic attraction force to the substrate. By adsorbing the substrate to the electrostatic chuck by the electrostatic attraction force, the bending of the substrate can be suppressed. In this specification, "insulating" means "electrically insulating" unless otherwise specified.

[0003] In order to control the temperature of the substrate to a temperature suitable for film formation during film formation processing, there is a technique of providing a heater for heating the substrate on an electrostatic chuck. Patent Document 1 describes a technique for controlling the temperature of a wafer during processing by placing the wafer on a stage provided on a metal base material, with a dielectric film portion formed by spraying a dielectric film of a plurality of layers containing a film-like heater electrode inside on the opposite side of the adsorption surface of an electrostatic chuck in which an electrode for electrostatic adsorption is disposed inside a sintered ceramic plate, and attaching the heater thus formed with an adhesive. Patent Document 2 describes an electrostatic chuck configured by spraying and forming a film-like heater electrode layer, a dielectric layer, and an electrode layer for electrostatic adsorption on a base material made of metal or ceramic.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] In a structure in which a heater electrode layer and an electrode layer for electrostatic adsorption are adjacent to each other through a dielectric layer formed by spraying, arcing may occur between the heater electrode and the electrode for electrostatic adsorption.

[0006] An object of the present invention is to suppress arcing between an electrode for a heater and an electrode for electrostatic adsorption in an electrostatic chuck provided with a heater.

Means for Solving the Problems

[0007] The present invention is an electrostatic chuck for adsorbing an object to be adsorbed by electrostatic force, a base material made of sintered ceramic, and an electrostatic chuck portion including an adsorption electrode provided on a first surface of the base material inside, A heater electrode provided on a second surface of the base material opposite to the first surface and the heater electrode A heater unit including an insulating layer made of an insulator formed thereon, comprising, The base material satisfies at least one of a low porosity, a high dielectric breakdown voltage, and a large volume resistivity with respect to the insulator constituting the insulating layer of the heater unit, and is an electrostatic chuck.

[0008] The present invention is an electrostatic chuck for adsorbing an object to be adsorbed by electrostatic force, a base material made of sintered ceramic, an electrostatic chuck portion provided on a first surface of the base material and including an adsorption electrode therein, a heater portion provided on a second surface of the base material opposite to the first surface and including a heater electrode therein, comprising, The heater electrode is composed of a sprayed layer formed on the second surface of the base material, The heater unit is an electrostatic chuck characterized by having an insulating layer composed of a sprayed layer formed on the heater electrode.

[0009] The present invention is a method of adsorbing an object to be adsorbed to an electrostatic chuck, The electrostatic chuck is a base material made of sintered ceramic, an electrostatic chuck portion provided on a first surface of the base material and including an adsorption electrode therein, a heater portion provided on a second surface of the base material opposite to the first surface and including a heater electrode and an insulating layer made of an insulator formed on the heater electrode therein, comprising, The base material satisfies at least one of a low porosity, a high dielectric breakdown voltage, and a large volume resistivity with respect to the insulator constituting the insulating layer of the heater unit, a step of applying a voltage to the adsorption electrode to adsorb the object to be adsorbed to the electrostatic chuck portion, a step of applying a voltage to the heater electrode to heat the object to be adsorbed, A suction method characterized by having

[0010] The present invention is a method for manufacturing an electrostatic chuck having an electrostatic chuck portion and a heater portion for adsorbing an object to be adsorbed by electrostatic force, a step of forming an adsorption electrode of the electrostatic chuck portion on a first surface of a sintered ceramic base material, a step of forming an insulating layer made of an insulator on the adsorption electrode by spraying, a step of forming a heater electrode of the heater portion on a second surface of the base material opposite to the first surface by spraying, a step of forming an insulating layer made of an insulator on the heater electrode by spraying, A method for manufacturing an electrostatic chuck having

Advantages of the Invention

[0011] According to the present invention, in an electrostatic chuck provided with a heater, arcing between the electrode for the heater and the electrode for electrostatic adsorption can be suppressed.

Brief Description of the Drawings

[0012]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Mode for Carrying Out the Invention

[0013] (Example 1) Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely exemplarily show preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the device are not intended to limit the scope of the present invention only to those unless otherwise specifically described.

[0014] The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum evaporation. As the material of the substrate, any material such as glass, a film of a polymer material, or metal can be selected, and the substrate may be, for example, a substrate having a film such as polyimide laminated on a glass substrate. Also, as the evaporation material, any material such as an organic material or a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum evaporation apparatus described in the following description, the present invention can also be applied to a film forming apparatus having a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technology of the present invention can be applied to manufacturing apparatuses for organic electronic devices (for example, organic EL elements, thin film solar cells), optical members, etc. Among them, a manufacturing apparatus for an organic EL element that forms an organic EL element by evaporating an evaporation material and depositing it on a substrate through a mask is one of the preferred application examples of the present invention.

[0015] <Manufacturing Apparatus for Electronic Devices> FIG. 1 is a plan view schematically showing a partial configuration of a manufacturing apparatus for an electronic device.

[0016] The manufacturing apparatus of FIG. 1 is used, for example, in the manufacture of a display panel of an organic EL display device for a smartphone. A manufacturing apparatus for an electronic device generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects between the cluster apparatuses 1.

[0017] The cluster apparatus 1 includes a plurality of film forming apparatuses 11 that perform processing (e.g., film formation) on a substrate S, a plurality of mask stock apparatuses 12 that store masks M before and after use, and a transfer chamber 13 disposed in the center thereof. As shown in FIG. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and mask stock apparatuses 12.

[0018] In the transfer chamber 13, a transfer robot 14 for transferring the substrate S and the mask M is disposed. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay apparatus disposed on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding the substrate S or the mask M is attached to an articulated arm.

[0019] In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the vapor deposition material stored in the vapor deposition source is heated by a heater and evaporated, and is vapor-deposited on the substrate S through the mask M. The mask M is provided with an opening at a position corresponding to the position where the thin film is formed on the substrate S, and is configured to cover the position where the thin film is not formed on the substrate S. Thereby, on the substrate S through the mask M, the m By performing film formation through the mask M, a thin film with a desired pattern (a pattern corresponding to the position where the opening is provided) is formed on the substrate S. As a specific example of the mask M, for example, a member composed of a mask frame with high rigidity provided on the outer periphery and a mask foil with low rigidity provided inside the mask frame can be mentioned. The mask frame and the mask foil can be joined by welding or the like. In the mask configured in this way, the above-mentioned opening is provided in the mask foil. As another specific example, a mask integrally including a portion corresponding to the mask frame and a portion corresponding to the mask foil can be mentioned. Such a mask can be manufactured, for example, by processing a silicon wafer. A series of film formation processes such as the transfer of the substrate S from or to the transfer robot 14, the adjustment of the relative position (alignment) between the substrate S and the mask M, the fixing of the substrate S on the mask M, and film formation (deposition) are performed by the film formation apparatus 11.

[0020] In the mask stock apparatus 12, a new mask M used in the film formation process in the film formation apparatus 11 and a used mask M are stored separately in two cassettes. The transfer robot 14 transfers the used mask M from the film formation apparatus 11 to the cassette of the mask stock apparatus 12, and transfers the new mask M stored in another cassette of the mask stock apparatus 12 to the film formation apparatus 11.

[0021] In the cluster apparatus 1, a pass chamber 15 for delivering the substrate S from the upstream side in the transfer direction of the substrate S to the cluster apparatus 1 and a buffer chamber 16 for delivering the substrate S on which the film formation process has been completed in the cluster apparatus 1 to another cluster apparatus on the downstream side are connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream pass chamber 15 and transfers it to one of the film formation apparatuses 11 (for example, the film formation apparatus 11a) in the cluster apparatus 1. Also, the transfer robot 14 receives the substrate S on which the film formation process has been completed in the cluster apparatus 1 from one of the plurality of film formation apparatuses 11 (for example, the film formation apparatus 11b) and transfers it to the buffer chamber 16 connected to the downstream side.

[0022] A turning chamber 17 for changing the orientation of the substrate S is installed between the buffer chamber 16 and the pass chamber 15. The turning chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180°, and transferring it to the pass chamber 15. As a result, the orientations of the substrate S in the upstream cluster device 1 and the downstream cluster device 1 become the same, facilitating substrate processing.

[0023] The pass chamber 15, the buffer chamber 16, and the turning chamber 17 are so-called relay devices that connect between the cluster devices 1. The relay device installed on the upstream side and / or the downstream side of the cluster device 1 has at least one of the pass chamber 15, the buffer chamber 16, and the turning chamber 17.

[0024] The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the turning chamber 17, etc. are maintained in a high vacuum state during the manufacturing process of the organic EL element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

[0025] Note that the configuration of the manufacturing apparatus for an electronic device to which the present invention is applicable is not limited to the above configuration, and may have other types of devices and chambers, and the arrangement between these devices and chambers may be changed. Hereinafter, the specific configuration of the film forming device 11 will be described.

[0026] <Film Forming Device> FIG. 2 is a schematic diagram showing the configuration of the film forming device 11. In the following description, an XYZ orthogonal coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction, and the long side direction (direction parallel to the long side) is the Y direction. Also, the rotation angle around the Z axis is represented by θ.

[0027] The film forming device 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 provided inside the vacuum container 21, a mask support unit 23, an electrostatic chuck 24, and a vapor deposition source 25.

[0028] The substrate support unit 22 is a means for receiving and holding the substrate S conveyed by the transfer robot 14 provided in the transfer chamber 13, and is also called a substrate holder (substrate holding means).

[0029] Below the substrate support unit 22, a mask support unit 23 is provided. The mask support unit 23 is a means for receiving and holding the mask M conveyed by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.

[0030] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. For example, a mask used for manufacturing an organic EL element for a smartphone is a metal mask formed with a fine opening pattern, and is also called an FMM (Fine Metal Mask).

[0031] Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate S and / or the mask M by electrostatic attraction is provided. The electrostatic chuck 24 adsorbs and holds the substrate S (the first adsorbed body) before film formation. Thereafter, film formation is performed while the substrate S (the first adsorbed body) and the mask M (the second adsorbed body) are held by the electrostatic chuck 24, and after film formation is completed, the holding by the electrostatic chuck 24 for the substrate S (the first adsorbed body) and the mask M (the second adsorbed body) is released.

[0032] Although not shown in FIG. 2, a cooling mechanism (for example, a cooling plate) for suppressing the temperature rise of the substrate S may be provided on the side opposite to the adsorption surface of the electrostatic chuck 24, so as to suppress the alteration and deterioration of the organic material deposited on the substrate S.

[0033] The evaporation source 25 includes a crucible (not shown) for storing the evaporation material to be formed on the substrate S, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the evaporation material from scattering onto the substrate S until the evaporation rate from the evaporation source 25 becomes constant, and the like. The evaporation source 25 can have various configurations according to the application, such as a point evaporation source or a linear evaporation source.

[0034] Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate S.

[0035] On the upper outer side (atmosphere side) of the vacuum chamber 21, a substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, etc. are provided. These actuators 26, 27, 28 and the position adjustment mechanism 29 are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for moving the substrate support unit 22 up and down (Z-direction movement). The mask Z actuator 27 is a driving means for moving the mask support unit 23 up and down (Z-direction movement). The electrostatic chuck Z actuator 28 is a driving means for moving the electrostatic chuck 24 up and down (Z-direction movement).

[0036] The position adjustment mechanism 29 is a driving means for the alignment of the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X-direction, Y-direction, and rotates it by θ with respect to the substrate support unit 22 and the mask support unit 23. In addition, with the substrate S adsorbed, alignment for adjusting the relative position between the substrate S and the mask M is performed by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions.

[0037] On the outer upper surface of the vacuum chamber 21, in addition to the above-described driving means and position adjustment mechanism, a camera 20 for photographing the alignment marks formed on the substrate S and the mask M is provided through the transparent window provided on the upper surface of the vacuum chamber 21 and the holes provided in the electrostatic chuck 24. The camera 20 is provided at positions corresponding to the through holes H provided in the electrostatic chuck 24, that is, at positions corresponding to the four corner portions and the central portion of the electrostatic chuck 24.

[0038] The camera 20 is a camera having the performance capable of performing fine alignment for precisely adjusting the relative positions of the substrate S and the mask M, and has a narrow viewing angle but high resolution. Note that, in addition to the camera 20 for fine alignment, the film forming apparatus 11 has a camera for rough alignment that has a relatively wide viewing angle and low resolution, and rough alignment using the camera for rough alignment and fine alignment using the camera for fine alignment may be combined to perform alignment for positioning the substrate S and the mask M.

[0039] The control unit 40 acquires the position information of the substrate S and the mask M by analyzing the images of the alignment marks of the substrate S (first adsorbed body) and the mask M (second adsorbed body) photographed by the camera 20. The control unit 40 performs alignment for relatively moving the substrate S (first adsorbed body) and the mask M (second adsorbed body) to perform position adjustment by controlling the position adjustment mechanism 29 based on the position information of the substrate S and the mask M.

[0040] The control unit 40 has functions such as conveyance and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit 40 also has a function of controlling the application of voltage to the electrostatic chuck 24, that is, the function of the first voltage control unit 32 in FIG. 3 described later.

[0041] The control unit 40 can be configured by, for example, a computer having a processor, a memory, a storage, I / O, etc. In this case, the functions of the control unit 40 are realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (Programmable Logic Controller) may be used. Alternatively, part or all of the functions of the control unit 40 may be configured by a circuit such as an ASIC or an FPGA. Also, the control unit 40 may be installed for each film forming apparatus 11, or one control unit 40 may be configured to control a plurality of film forming apparatuses 11.

[0042] <Electrostatic chuck system> With reference to FIGS. 3 to 6, the electrostatic chuck system 30 and the adsorption method will be described. FIG. 3 is a block diagram of the electrostatic chuck system 30 and a cross-sectional view of the electrostatic chuck 24. FIG. 4 is a plan view of the electrostatic chuck portion 240. FIG. 5 is a plan view of the heater portion 150. FIG. 6 is a plan view of the electrostatic chuck portion 240. FIG. 3 is a cross-sectional view at the position indicated by line AA in FIGS. 4 and 5.

[0043] As shown in FIG. 3, the electrostatic chuck system 30 includes an electrostatic chuck 24, a first voltage application unit 31, a first voltage control unit 32, a second voltage application unit 36, and a second voltage control unit 37. The electrostatic chuck 24 adsorbs the substrate S, which is an object to be adsorbed, by electrostatic force. The electrostatic chuck 24 includes a sintered ceramic base material 80, an electrostatic chuck portion 240 provided on the first surface 81 of the base material 80 and including the adsorption electrode 2 therein, and a heater portion 150 provided on the second surface 82 opposite to the first surface 81 of the base material 80 and including the heater electrode 90 therein. The first voltage application unit 31 is connected to the adsorption electrode 2 of the electrostatic chuck portion 240 via the wiring 34, and applies a voltage for generating an electrostatic attraction force to the adsorption electrode 2. Further, the second voltage application unit 36 is connected to the heater electrode 90 of the heater portion 150 via the wiring 35, and applies a voltage for generating heat to the heater electrode 90.

[0044] The electrostatic chuck portion 240 includes an electrode layer 240a composed of a sprayed layer formed on the first surface 81 of the base material 80, and a dielectric layer 240b composed of a sprayed layer formed on the electrode layer 240a. The portion of the electrode layer 240a other than the adsorption electrode 2 is composed of an insulator. The wiring 34 connected to the adsorption electrode 2 of the electrode layer 240a is drawn out from the lower surface of the electrostatic chuck 24 through the dielectric layer 240b and connected to the first voltage application unit 31.

[0045] The heater unit 150 includes an electrode layer 150a composed of a sprayed layer formed on the second surface 82 of the base material 80, and an insulating layer 150b composed of a sprayed layer formed on the electrode layer 150a. The wiring 35 connected to the heater electrode 90 of the electrode layer 150a is drawn out from the upper surface of the electrostatic chuck 24 through the insulating layer 150b and connected to the second voltage application unit 36.

[0046] Note that the wiring connected to the adsorption electrode 2 and the wiring connected to the heater electrode 90 may both be drawn out from the upper surface of the electrostatic chuck 24, or both may be drawn out from the lower surface of the electrostatic chuck 24.

[0047] <Method for manufacturing an electrostatic chuck> In the electrostatic chuck 24 of Example 1, the base material 80 satisfies at least one of the following conditions with respect to the insulator constituting the insulating layer 150b of the heater unit 150: low porosity, high dielectric breakdown voltage, and high volume resistivity. In such a method for manufacturing the electrostatic chuck 24, a terminal assembly is provided on the base material 80 produced by machining a ceramic sintered material.

[0048] For the electrostatic chuck portion 240, first, an electrode layer 240a is formed on the first surface 81 of the base material 80 by spraying. The electrode layer 240a is pattern-formed by spraying an electrode material such as aluminum using a pattern mask to form the adsorption electrode 2. Next, a dielectric layer 240b, which is a layer made of a dielectric such as alumina, is formed on the electrode layer 240a by spraying. Next, impregnation is performed on the dielectric layer 240b using an inorganic or organic impregnating agent, and a sealing treatment is performed to take measures against porosity. Thereby, the electrical insulation and non-hygroscopicity are improved. Next, the dielectric layer 240b is polished.

[0049] First, an electrode layer 150a is formed on the second surface 82 of the base material 80 by spraying. The formation of the electrode layer 150a of the heater unit 150 is performed in the same manner as the formation of the electrode layer 240a of the electrostatic chuck unit 240. Next, an insulating layer 150b, which is made of an insulator and electrically insulates between the electrode of the electrode layer 240a and the outside of the electrostatic chuck 24, is formed on the electrode layer 150a by spraying. Next, an impregnation treatment is performed on the insulating layer 150b. The impregnation treatment of the insulating layer 150b of the heater unit 150 is performed in the same manner as the impregnation treatment of the dielectric layer 240b of the electrostatic chuck unit 240. Next, the insulating layer 150b is polished.

[0050] The thickness of the base material 80 is 3 mm or more and 20 mm or less, and more preferably 8 mm or more and 15 mm or less. The base material 80 is manufactured by sintering, and as materials, alumina (Al 2 O 3 ), machinable ceramic, MMC (Metal Matrix Composites), etc. can be used.

[0051] The thickness of the electrode layer 150a including the heater electrode 90 of the heater unit 150 is 0.02 mm or more and 0.4 mm or less. The thickness of the electrode layer 240a including the adsorption electrode 2 of the electrostatic chuck unit 240 is 0.1 mm or more and 0.4 mm or less. The electrode layers 150a and 240a are manufactured by metal spraying, and as materials, aluminum (Al), tungsten (W), molybdenum (Mo), nickel-chromium alloy (NiCr), etc. can be used.

[0052] The thickness of the insulating layer 150b of the heater unit 150 is 0.1 mm or more and 0.8 mm or less. The thickness of the dielectric layer 240b of the electrostatic chuck unit 240 is 0.2 mm or more and 1.0 mm or less. The insulating layer 150b and the dielectric layer 240b are manufactured by ceramic spraying, and as materials, alumina, YAG, yttria (Y 2 O 3 ), zircon (ZrSiO 4 ), titania (TiO 2 ), etc. can be used.

[0053] Since the electrostatic chuck system 30 of Example 1 is used in a film forming apparatus for forming a film on a substrate S by deposition up, the first surface 81 where the electrostatic chuck portion 240 of the base material 80 is provided is the lower surface, and the second surface 82 is the upper surface. When vapor deposition is performed by deposition down, the first surface where the electrostatic chuck portion of the base material 80 is provided is the upper surface, and the second surface where the heater portion on the opposite side is provided is the lower surface. When vapor deposition is performed while holding the substrate in a posture parallel to the vertical direction, both the first surface where the electrostatic chuck of the base material is provided and the second surface where the heater portion on the opposite side is provided are parallel to the vertical direction.

[0054] The first voltage control unit 32 controls the voltage applied to the adsorption electrode 2 from the first voltage application unit 31 according to the progress of the adsorption process of the electrostatic chuck system 30 and the film forming process of the film forming apparatus 11. The second voltage control unit 37 controls the voltage applied to the heater electrode 90 from the second voltage application unit 36. The control of these voltages includes control of the magnitude of the voltage, the start point of voltage application, the duration of voltage maintenance, the order of voltage application, and the like.

[0055] The adsorption electrode 2 generates an electrostatic force for adsorbing an object to be adsorbed (for example, a substrate S, a mask M) on the adsorption surface 83 (the lower surface of the dielectric layer 240b) by applying a voltage by the first voltage application unit 31. And the electrostatic chuck portion 240 has a shape and dimensions corresponding to the shape of the substrate S. In Example 1, the substrate S is rectangular and its long side is 1500 mm or more, and the electrostatic chuck portion 240 has a shape and dimensions capable of adsorbing such a large substrate.

[0056] The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rahbek force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. When the electrostatic chuck 24 is a gradient force type electrostatic chuck, even if the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive and negative voltages are applied to the metal electrodes, polarization charges of the opposite polarity to the metal electrodes are induced in the adsorbed object such as the substrate S through the dielectric matrix, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by the electrostatic attraction between them.

[0057] In the electrostatic chuck 24, a through hole H which is one or more notch portions is formed so as to penetrate the plate. The through hole H is an alignment through hole for enabling the alignment marks formed on the substrate S and the mask M to be photographed through the electrostatic chuck 24. The through hole H may be an empty space with nothing filled, or may be filled with a transparent insulating substance.

[0058] As shown in FIG. 6, the through holes H are provided at the four corner portions and the central portion of the electrostatic chuck 24. Note that the location where the through holes H are provided is an example, and is set according to the positions of the alignment marks provided on the substrate S and the mask M. Note that the installation position and the number of the through holes H are examples, and the present invention is not limited to the above example. For example, the through holes H may be provided at two corner portions instead of the four corner portions on the diagonal line. Further, the through holes H may be further provided at the centers of a pair of opposing sides (for example, short sides). Further, the through holes H may be formed by performing a notching process on a member having no through hole later, or may be provided by forming a member having a through hole from the beginning. Further, the shape of the notch portion may be any shape as long as it penetrates from the adsorption surface for adsorbing the adsorbed object to the surface on the opposite side, and the adsorbed object can be photographed by a camera through it. Any shape may be used as long as it has such a shape.

[0059] As shown in FIGS. 3 and 4, the adsorption electrode 2 has a plurality of electrode portions. Specifically, the adsorption surface 83 of the electrostatic chuck portion 240 is divided into a plurality of regions along the longitudinal direction (Y direction) and the short-side direction (X direction), and each of the plurality of electrode portions is provided at a position corresponding to each of the plurality of regions. The first voltage control unit 32 can independently control the voltage application to the plurality of electrode portions of the electrostatic chuck portion 240 for each electrode portion. In the first embodiment, the electrostatic chuck portion 240 is divided into a total of nine regions 141 to 149 that are divided into three in the X direction and three in the Y direction, and each of the nine electrode portions 241 to 249 of the adsorption electrode 2 is provided at a position corresponding to each region.

[0060] Each of the electrode portions 241 to 249 has an electrode pair 33 composed of a first electrode 331 and a second electrode 332. In the first embodiment, an electrostatic adsorption force is generated by applying a positive voltage to the first electrode 331 and a negative voltage to the second electrode 332.

[0061] As shown in FIG. 4, the first electrode 331 and the second electrode 332 each have a comb shape. For example, the first electrode 331 and the second electrode 332 each have a plurality of comb teeth portions and a base portion connected to the plurality of comb teeth portions. The base portion of each of the first electrode 331 and the second electrode 332 supplies a voltage to the comb teeth portion, and the plurality of comb teeth portions generate an electrostatic adsorption force with the object to be adsorbed. In one electrode portion, the comb teeth portions of the first electrode 331 are alternately arranged so as to face the comb teeth portions of the second electrode 332. In this way, by adopting a configuration in which the comb teeth portions of the first electrode 331 and the second electrode 332 face each other and are intertwined with each other, the distance between the electrodes to which different voltages are applied can be narrowed, a large non-uniform electric field can be formed, and the substrate S can be adsorbed by the gradient force. Note that the shapes of the first electrode 331 and the second electrode 332 of each of the electrode portions 241 to 249 of the electrostatic chuck 24 are merely examples and are not limited to the above example. As long as an electrostatic attractive force can be generated with the object to be adsorbed, various shapes can be adopted.

[0062] Note that the region division of the electrostatic chuck portion 240 shown in FIGS. 3 and 4 is an example and is not limited to the above example. For example, it may be divided only in the longitudinal direction or the short-side direction of the electrostatic chuck portion 240. Further, the phrase "the adsorption surface 83 of the electrostatic chuck portion 240 is divided into a plurality of regions" as used herein means that the electrostatic chuck portion 240 may have a plurality of adsorption portions that are physically separate, and each adsorption portion may have one or a plurality of electrode portions, or a configuration in which a plurality of electrode portions capable of independently controlling voltage application are provided in one physically single adsorption portion. Further, a configuration in which voltage application can be controlled independently for each sub-electrode may be adopted, or a plurality of electrode portions may be divided into a plurality of groups each including one or a plurality of electrode portions, and a configuration in which voltage application can be controlled independently for each group may be adopted.

[0063] For example, three electrode portions 241, 244, and 247 arranged in a direction (Y direction) intersecting the adsorption progress direction (X direction) of the substrate S can be regarded as one group, and the three electrode portions included in this group can form one adsorption portion. That is, although the three electrode portions 241, 244, and 247 can be independently voltage-controlled, by controlling so that the same voltage is applied to these three electrode portions 241, 244, and 247 simultaneously, these three electrode portions 241, 244, and 247 can function as one adsorption portion.

[0064] Note that the first voltage control unit 32 and the second voltage control unit 37 may be configured by hardware separate from the control unit 40 of the film forming apparatus 11, or the control unit 40 of the film forming apparatus 11 may execute the functions of the first voltage control unit 32 and the second voltage control unit 37.

[0065] Further, FIG. 4 shows an example in which the electrode densities of the plurality of electrode portions 241 to 249 are uniform, but the electrode density may be set for each electrode portion as necessary. For example, the electrode density may be different between the electrode portion corresponding to the region where the through hole H is provided and the electrode portion corresponding to the region where the through hole H is not provided. density may be different.

[0066] As shown in FIG. 5, the heater electrodes 90 of the heater unit 150 are provided on the entire second surface 82 of the base material 80. The heater electrodes 90 have a continuous folded-back shape including a plurality of first portions 90d extending from one end side to the other end side in the Y direction of the second surface 82 of the base material 80 along the Y direction, and second portions 90c connecting the ends of the adjacent first portions 90d in the X direction. Terminals 90a and 90b to which wirings for supplying power from the second voltage applying unit 36 are connected are provided at both ends of the heater electrode 90. The terminals 90a and 90b are both provided on the outer peripheral portion of the heater unit 150.

[0067] <Advantages of the electrostatic chuck 24 of Example 1> In the electrostatic chuck 24 of Example 1, since the electrode layer 150a of the heater unit 150 is formed by spraying, the degree of freedom in the shape of the electrode to be formed is high. Therefore, an electrode having a complex shape as shown in FIG. 5 can be formed, and the heat uniformity of the heater unit 150 is high. Further, between the heater electrode 90 of the heater unit 150 and the adsorption electrode 2 of the electrostatic chuck unit 240, it is insulated by the base material 80 made of sintered ceramic. By insulating between the heater electrode 90 and the adsorption electrode 2 with the base material 80 made of sintered ceramic, for example, compared with the case of insulating with an insulating layer formed by spraying, it can be insulated with an insulating layer having a low porosity, high density, strong dielectric breakdown voltage, large volume inefficiency, and small variation in electrical characteristics. Therefore, arcing between the heater electrode 90 of the heater unit 150 and the adsorption electrode 2 of the electrostatic chuck unit 240 can be suppressed.

[0068] Since the electrostatic chuck portion 240 is configured by forming an electrode layer 240a and a dielectric layer 240b on the first surface 81 of the base material 80 by spraying, the members constituting the base material 80 and the members constituting the electrostatic chuck portion 240 are directly joined, and the members constituting the electrostatic chuck portion 240 are directly in contact with the members constituting the base material 80. Therefore, there is no adhesive layer which is a layer disposed between the first surface 81 of the base material 80 and the electrode layer 240a and fixes both with an adhesive. Thus, the electrostatic chuck portion 240 is provided on the first surface 81 of the base material 80 without passing through the adhesive layer. Further, since the heater portion 150 is configured by forming an electrode layer 150a and an insulating layer 150b on the second surface 82 of the base material 80 by spraying, the members constituting the base material 80 and the members constituting the heater portion 150 are directly joined, and the members constituting the heater portion 150 are directly in contact with the members constituting the base material 80. Therefore, the heater portion 150 is provided on the second surface 82 of the base material 80 without passing through the adhesive layer. Thus, since the electrostatic chuck 24 does not have an adhesive layer, generation of outgassing in the vacuum vessel 21 (vacuum chamber) can be suppressed.

[0069] Since a wiring 34 for supplying power from the outside to the adsorption electrode 2 is taken out from the lower surface of the electrostatic chuck 24 (the side where the electrostatic chuck portion 240 is provided), and a wiring 35 for supplying power from the outside to the heater electrode 90 is taken out from the upper surface of the electrostatic chuck 24 (the side where the heater portion 150 is provided), there is no electrical wiring portion inside the base material 80. Therefore, generation of arcing due to the presence of the electrical wiring portion can be suppressed.

[0070] <Alignment> The alignment performed based on the image of the substrate S photographed through the through hole H of the electrostatic chuck 24 by the camera 20 will be described with reference to FIG. 7. FIG. 7 is a diagram schematically showing the image photographed by the camera 20.

[0071] In the image 50 captured by the camera 20, there are shown a through-hole H provided in the electrostatic chuck 24, a substrate mark 51 which is an alignment mark provided on the substrate S, and a mask mark 52 which is an alignment mark provided on a mask M positioned below the substrate S. The control unit 40 obtains the positional relationship between the substrate mark 51 and the mask mark 52 by analyzing the image 50 captured by the camera 20, and calculates the operation amount of the position adjustment mechanism 29 necessary for aligning the positions of the substrate mark 51 and the mask mark 52 with the mask mark 52 as the target position. Then, the position adjustment mechanism 29 is driven in the X direction, Y direction, and θ direction by the calculated operation amount.

[0072] Thus, in the first embodiment, alignment can be determined based on the image 50 obtained by imaging with the camera 20 through the through-hole H.

[0073] <Film Deposition Process> Hereinafter, a film deposition method employing the adsorption method according to the first embodiment will be described based on the flowchart of FIG. 8.

[0074] In step S1, the control unit 40 causes the transfer robot 14 in the transfer chamber 13 to carry the substrate S into the vacuum chamber 21 of the film deposition apparatus 11 in a state where the mask M is supported by the mask support unit 23 in the vacuum chamber 21. The hand of the transfer robot 14 that has entered the vacuum chamber 21 is lowered, and the substrate S is placed on the support portion of the substrate support unit 22.

[0075] In step S2, the control unit 40 lowers the electrostatic chuck 24 toward the substrate S, and after sufficiently approaching or contacting the substrate S, applies a predetermined voltage to the adsorption electrode 2 of the electrostatic chuck portion 240 to adsorb the substrate S.

[0076] In step S3, with the substrate S adsorbed on the electrostatic chuck 24, the control unit 40 measures the relative positional deviation of the substrate S with respect to the mask M. The control unit 40 lowers the electrostatic chuck 24 and brings the substrate S adsorbed on the electrostatic chuck 24 closer to the mask M. When the substrate S descends to the measurement position, the control unit 40 uses the camera 20 to photograph the alignment marks formed on the substrate S and the mask M through the through holes H, and measures the relative positional deviation between the substrate S and the mask M.

[0077] In step S4, the control unit 40 determines whether the relative positional deviation of the substrate S with respect to the mask M is equal to or less than the threshold value. If the deviation is greater than the threshold value, the process proceeds to step S5. If the deviation is equal to or less than the threshold value, the process proceeds to step S6.

[0078] In step S5, the control unit 40 controls the position adjustment mechanism 29 to move the substrate S adsorbed on the electrostatic chuck 24 in the horizontal direction (XYθ direction), and performs position adjustment (alignment) of the substrate S with respect to the mask M. Then, the determination of the positional deviation in step S4 is performed again.

[0079] In step S6, the control unit 40 applies a predetermined voltage to the adsorption electrode 2 of the electrostatic chuck unit 240 to adsorb the mask M to the electrostatic chuck 24 through the substrate S.

[0080] In step S7, the control unit 40 applies a predetermined voltage to the heater electrode 90 of the heater unit 150 to heat the substrate S so that its temperature becomes suitable for the film formation process. Note that the temperature control can be performed, for example, by providing a temperature sensor inside the electrostatic chuck 24 and performing feedback control based on the output value of the temperature sensor.

[0081] In step S8, the control unit 40 opens the shutter of the vapor deposition source 25 and vapor-deposits the vapor deposition material on the substrate S through the mask M. After vapor deposition to a desired thickness, the voltage applied to the adsorption electrode 2 of the electrostatic chuck 24 is lowered to separate the mask M, and the electrostatic chuck 24 is raised by the electrostatic chuck Z actuator 28 with only the substrate S adsorbed on the electrostatic chuck 24. Subsequently, the hand of the transfer robot 14 enters the vacuum chamber 21 of the film forming apparatus 11, and a voltage of zero (0) or reverse polarity is applied to the adsorption electrode 2 of the electrostatic chuck 24, and the substrate S is separated from the electrostatic chuck 24. Thereafter, the substrate S on which vapor deposition has been completed is carried out of the vacuum chamber 21 by the transfer robot 14.

[0082] In the above description, the film forming apparatus 11 is configured in a so-called upward vapor deposition method (depo-up) in which film formation is performed with the film formation surface of the substrate S facing downward in the vertical direction. However, the present invention is not limited to this, and the substrate S may be arranged in a state where it is vertically erected on the side surface side of the vacuum chamber 21, and film formation may be performed with the film formation surface of the substrate S parallel to the gravitational direction.

[0083] Hereinafter, Example 2 and Example 3 will be described. The same members as those in Example 1 are denoted by the same reference numerals, and detailed descriptions thereof are omitted. (Example 2) In Example 2, the configuration of the heater unit 150 is different from that in Example 1. Hereinafter, the differences from Example 1 will be mainly described. FIG. 9 is a plan view of the heater unit 150 of Example 2. As shown in FIG. 9, the heater electrode 90 has a plurality of electrode portions, and each of the plurality of electrode portions is arranged at a position corresponding to each of a plurality of regions set on the second surface 82 of the base material 80. In the example of FIG. 9, the heater unit 150 is divided into a total of nine regions 161 to 169 that are divided into three parts in the X direction and three parts in the Y direction, and each of the nine electrode portions 91 to 99 of the heater electrode 90 is provided at a position corresponding to each region.

[0084] The second voltage control unit 37 may be able to independently control the voltage application by the second voltage application unit 36 to each of the plurality of electrode units 91 to 99. In this case, among the plurality of regions 161 to 169, the second voltage control unit 37 makes the heat generation amount of the outer peripheral electrode units 91 to 94, 96 to 99 corresponding to the regions 161 to 164, 166 to 169 on the outer peripheral portion of the heater unit 150 larger than the heat generation amount by the central electrode unit 95 corresponding to the region 165 in the central portion of the heater unit 150, and may control the voltage application so that the voltage applied to the outer peripheral electrode units 91 to 94, 96 to 99 is larger than the voltage applied to the central electrode unit 95. Thereby, since the heat generation amount of the easily-cooled outer peripheral portion becomes large, it becomes possible to uniformly heat the substrate S over the entire area of the heater unit 150.

[0085] Note that the configuration in which the heat generation amount by the outer peripheral electrode units 91 to 94, 96 to 99 is larger than the heat generation amount by the central electrode unit 95 is not limited to this. For example, the resistance of the outer peripheral electrode units 91 to 94, 96 to 99 may be made larger than the resistance of the central electrode unit 95. Also, the film thickness of the outer peripheral electrode units 91 to 94, 96 to 99 may be made smaller than the film thickness of the central electrode unit 95. Also, the width of the outer peripheral electrode units 91 to 94, 96 to 99 may be made narrower than the width of the central electrode unit 95.

[0086] Note that depending on the purpose, the voltage application to the electrode units 91 to 99 may be controlled so that a temperature gradient is formed in the plane of the heater unit 150, or the resistance, film thickness, and width of the electrode units 91 to 99 may be set.

[0087] Terminals 91a, 91b, ···, 99a, 99b to which wirings for supplying power from the second voltage application unit 36 are connected are provided at both ends of each of the plurality of electrode units 91 to 99. All of the terminals 91a to 99b are provided on the outer peripheral portion of the heater unit 150.

[0088] (Example 3) Example 3 will be described with reference to FIG. 10. FIG. 10 is a cross-sectional view of the electrostatic chuck 24 of Example 3 at the same position as in FIG. 3. In Example 3, the configuration of the base material 80 is different from that of Example 1. Hereinafter, the differences from Example 1 will be mainly described.

[0089] The base material 80 of Example 3 has a structure in which insulating layers 80b and 80c made of sintered ceramic are provided on both surfaces of a flat core member 80a made of metal.

[0090] <Method for manufacturing the electrostatic chuck 24> The insulating layers 80b and 80c are attached to both surfaces of the core member 80a with an adhesive. The electrostatic chuck portion 240 is formed by forming an electrode layer 240a and a dielectric layer 240b on the lower surface of the insulating layer 80b by spraying. The heater portion 150 is formed by forming an electrode layer 150a and an insulating layer 150b on the upper surface of the insulating layer 80c by spraying. Note that the base material 80 may be manufactured by hollowing out the inside of a plate material made of sintered ceramic and pouring a metal material.

[0091] Also in the configuration of Example 3, since the insulating layers 80b and 80c made of sintered ceramic isolate between the adsorption electrode 2 and the heater electrode 90, the occurrence of arcing between the adsorption electrode 2 and the heater electrode 90 can be suppressed. Further, since the core member 80a is a plate material made of metal, it has high workability, and for example, it is easy to have a complicated structure such as arranging a water cooling pipe inside.

[0092] <Method for manufacturing an electronic device> Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device will be exemplified as an example of the electronic device.

[0093] First, the organic EL display device to be manufactured will be described. Fig. 11(a) is an overall view of the organic EL display device 60, and Fig. 11(b) shows the cross-sectional structure of one pixel. As shown in Fig. 11(a), in the display area 61 of the organic EL display device 60, a plurality of pixels 62 each including a light-emitting element are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to the minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device in this embodiment, the pixel 62 is constituted by a combination of a first light-emitting element 62R, a second light-emitting element 62G, and a third light-emitting element 62B that exhibit different emissions. The pixel 62 is often constituted by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color or more.

[0094] Fig. 11(b) is a partial cross-sectional schematic view taken along line B-B in Fig. 11(a). The pixel 62 has an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on a substrate S. Among these, the hole transport layer 65, the light-emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Also, in this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. Also, the anode 64 is formed separately for each light-emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with a plurality of light-emitting elements 62R, 62G, 62B, or may be formed for each light-emitting element. Note that an insulating layer 69 is provided between the anodes 64 to prevent short-circuiting between the anode 64 and the cathode 68 due to foreign matter. Further, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

[0095] In FIG. 11(b), the hole transport layer 65 and the electron transport layer 67 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed of a plurality of layers having a hole blocking layer and an electron blocking layer. Further, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 can be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

[0096] Next, an example of a method for manufacturing an organic EL display device will be specifically described. First, a substrate S on which a circuit (not shown) for driving the organic EL display device and the anode 64 are formed is prepared. An acrylic resin is spin-coated on the substrate S on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0097] The substrate S on which the insulating layer 69 is patterned is carried into a first organic material film-forming apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display region. The hole transport layer 65 is formed by vacuum deposition. Actually, since the hole transport layer 65 is formed in a size larger than the display region 61, a high-definition mask is not required.

[0098] Next, the substrate S on which the hole transport layer 65 is formed is carried into a second organic material film-forming apparatus and held by an electrostatic chuck. Alignment between the substrate S and the mask M is performed, the mask M is held through the substrate S by an electrostatic chuck, and a light-emitting layer 66R that emits red light is formed in the portion where the element that emits red light of the substrate S is disposed.

[0099] Similar to the formation of the light-emitting layer 66R, a light-emitting layer 66G that emits green light is formed by a third organic material film-forming apparatus, and a light-emitting layer 66B that emits blue light is further formed by a fourth organic material film-forming apparatus. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, an electron transport layer 67 is formed over the entire display region 61 by a fifth film-forming apparatus. The electron transport layer 67 is formed as a common layer for the three-color light-emitting layers 66R, 66G, and 66B.

[0100] The substrate S on which the electron transport layer 67 is formed is moved by a metallic vapor deposition material film-forming apparatus to form a cathode 68. Thereafter, the substrate is moved to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed. If the substrate S with the patterned insulating layer 69 is exposed to an atmosphere containing moisture or oxygen from when it is loaded into the film-forming apparatus until the formation of the protective layer 70 is completed, the light-emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in the present embodiment, the loading and unloading of the substrate S between the film-forming apparatuses are performed under a vacuum atmosphere or an inert gas atmosphere.

[0101] The above embodiment is an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

Description of Reference Numerals

[0102] 2: Adsorption electrode 24: Electrostatic chuck 80: Substrate 90: Heater electrode 150: Heater section 150b: Insulating layer 240: Electrostatic chuck section

Claims

1. An electrostatic chuck for adsorbing an object to be adsorbed by electrostatic force, comprising: a base material made of sintered ceramic; an electrostatic chuck portion including an adsorption electrode provided on a first surface of the base material; a heater portion including a heater electrode provided on a second surface of the base material opposite to the first surface and an insulating layer formed on the heater electrode; wherein the base material satisfies at least one of the following conditions with respect to the insulator constituting the insulating layer of the heater portion: low porosity, high dielectric breakdown voltage, and high volume resistivity. The electrostatic chuck is characterized by this.

2. The heater electrode is composed of a sprayed layer formed on the second surface of the base material, The electrostatic chuck according to claim 1, wherein the insulating layer of the heater portion is composed of a sprayed layer formed on the heater electrode.

3. The electrostatic chuck according to claim 1 or 2, wherein the electrostatic chuck portion has an insulating layer made of an insulator formed on the adsorption electrode.

4. The adsorption electrode is composed of a sprayed layer formed on the first surface of the base material, The electrostatic chuck according to claim 3, wherein the insulating layer of the electrostatic chuck portion is composed of a sprayed layer formed on the adsorption electrode.

5. The electrostatic chuck portion is provided on the first surface of the base material without an adhesive layer therebetween, The electrostatic chuck according to claim 1 or 2, wherein the heater portion is provided on the second surface of the base material without an adhesive layer therebetween.

6. The electrostatic chuck according to claim 1 or 2, wherein the lower surface of the base material is the first surface and the upper surface of the base material is the second surface.

7. The heater electrode has a plurality of electrode portions, The electrostatic chuck according to claim 1 or 2, wherein each of the plurality of electrode portions is disposed at a position corresponding to each of a plurality of regions set on the second surface.

8. The amount of heat generated by an outer peripheral electrode portion corresponding to a region on the outer peripheral portion of the second surface among the plurality of regions is greater than the amount of heat generated by a central electrode portion corresponding to a region on the central portion of the second surface among the plurality of regions. The electrostatic chuck according to claim 7 is characterized by this.

9. The electrostatic chuck according to claim 8, wherein the resistance of the outer peripheral electrode portion is greater than the resistance of the central electrode portion.

10. The electrostatic chuck according to claim 8, wherein the film thickness of the outer peripheral electrode portion is smaller than the film thickness of the central electrode portion.

11. The electrostatic chuck according to claim 8, wherein the width of the outer peripheral electrode portion is narrower than the width of the central electrode portion.

12. The electrostatic chuck according to claim 8, wherein the voltage applied to the outer peripheral electrode portion is larger than the voltage applied to the central electrode portion.

13. The terminal of the wiring for supplying power to each of the plurality of electrode portions is provided on the outer peripheral portion of the heater portion. The electrostatic chuck according to claim 7.

14. The wiring for supplying power from the outside to the adsorption electrode is taken out from the side where the electrostatic chuck portion in the electrostatic chuck is provided, The wiring for supplying power from the outside to the heater electrode is taken out from the side where the heater portion in the electrostatic chuck is provided. The electrostatic chuck according to claim 1 or 2.

15. An electrostatic chuck for adsorbing an object to be adsorbed by electrostatic force, A base material made of sintered ceramic, An electrostatic chuck portion provided on the first surface of the base material and including an adsorption electrode therein, A heater portion provided on the second surface of the base material opposite to the first surface and including a heater electrode therein, Comprising, The heater electrode is composed of a sprayed layer formed on the second surface of the base material, The heater portion has an insulating layer composed of a sprayed layer formed on the heater electrode. The electrostatic chuck is characterized in that.

16. A film forming apparatus for forming a vapor deposition material on a substrate through a mask, The electrostatic chuck according to any one of claims 1, 2 or 15, which adsorbs the substrate as the object to be adsorbed to the electrostatic chuck portion, Substrate holding means for holding the substrate, A film forming apparatus, characterized in that film formation is performed on the surface of the substrate opposite to the surface adsorbed by the electrostatic chuck of the substrate in a state where the substrate held by the substrate holding means is adsorbed to the electrostatic chuck portion.

17. The film forming apparatus according to claim 16, wherein film formation is performed on the lower surface of the substrate in a state where the upper surface of the substrate is adsorbed by the electrostatic chuck.

18. A method for adsorbing an object to be adsorbed to an electrostatic chuck, The electrostatic chuck is, A base material made of sintered ceramic, An electrostatic chuck portion provided on the first surface of the base material and including an adsorption electrode therein, A heater portion provided on the second surface of the base material opposite to the first surface and including a heater electrode and an insulating layer formed on the heater electrode therein, Comprising, The base material satisfies at least one of low porosity, strong dielectric breakdown voltage, and high volume resistivity with respect to the insulator constituting the insulating layer of the heater portion. A step of applying a voltage to the adsorption electrode to adsorb the adsorbed object to the electrostatic chuck part; A step of applying a voltage to the heater electrode to heat the adsorbed object; An adsorption method characterized by comprising these steps.

19. A film forming method for forming a vapor deposition material on a substrate through a mask, A step of adsorbing the substrate as the adsorbed object to the electrostatic chuck part by the adsorption method according to Claim 18; A step of heating the substrate by the adsorption method according to Claim 18; A step of forming the vapor deposition material on the substrate through the mask; A film forming method characterized by comprising these steps.

20. A method for manufacturing an electronic device, characterized by manufacturing the electronic device using the film forming method of Claim 19 .

21. A method for manufacturing an electrostatic chuck having an electrostatic chuck part and a heater part for adsorbing an adsorbed object by electrostatic force, A step of forming an adsorption electrode of the electrostatic chuck part on a first surface of a sintered ceramic base material; A step of forming an insulating layer made of an insulator on the adsorption electrode by thermal spraying; A step of forming a heater electrode of the heater part on a second surface of the base material opposite to the first surface by thermal spraying; A step of forming an insulating layer made of an insulator on the heater electrode by thermal spraying; A method for manufacturing an electrostatic chuck characterized by comprising these steps.

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