Laminated type electronic component

Abstract

To provide a laminated type electronic component which is excellent in reliability and high temperature reliability.SOLUTION: A laminated type electronic component includes a body including a dielectric layer, and an internal electrode alternately arranged with the dielectric layer, and an external electrode arranged on the body, wherein a ceramic layer is arranged between the dielectric layer and the internal electrode, an area ratio occupied by a gap in the ceramic layer is represented by Sp1 and an area ratio occupied by a gap in the dielectric layer is represented by Sp2, Sp1 is less than 5%, and Sp1<Sp2 can be satisfied.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-shaped capacitor that is mounted on a printed circuit board of various electronic products such as video equipment like liquid crystal display (LCD) devices and plasma display panel (PDP) panels, computers, smartphones, and mobile phones, and serves to charge or discharge electricity.

[0003] Due to the advantages of being small in size while ensuring high capacitance and being easy to mount, multilayer ceramic capacitors can be used as components of various electronic devices. As various electronic devices such as computers and mobile devices are miniaturized and have increased output power, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] In addition, as the application to automotive electrical components and the like increases, high reliability in various environments is required. In particular, in the case of the power train, which is a core component of an automobile, since heat of 100 °C or higher is generated, the development of a multilayer ceramic capacitor that can operate stably even at high temperatures is required.

[0005] In order to improve the high-temperature reliability of multilayer ceramic capacitors, a proposal has been made to change the material of the dielectric layer. Typically, a proposal has been made to make the dielectric crystal grains have a core-shell structure. However, due to the form of the core-shell structure, it has a problem that it is difficult to adjust the fine structure because it greatly affects the electrical characteristics of the multilayer ceramic capacitor.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] One of the various objects of the present invention is to provide a multilayer electronic component with excellent reliability.

[0008] One of the various objects of the present invention is to provide a multilayer electronic component with excellent high-temperature reliability.

[0009] However, the object of the present invention is not limited to the above-described content, and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Means for Solving the Problems

[0010] The multilayer electronic component according to an embodiment of the present invention includes a dielectric layer, a capacitance forming portion including internal electrodes alternately arranged with the dielectric layer in a first direction, and cover portions arranged above and below the capacitance forming portion in the first direction. The multilayer electronic component includes a main body including first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and facing each other in a third direction, and external electrodes arranged on the main body. The cover portion includes one or more crystal phases composed of an oxide containing a rare earth element and Si. When the area ratio occupied by the crystal phase at the central portions of the first and second surfaces is S1, and the area ratio occupied by the crystal phase at the central portion of the cross section of the cover portion in the first and third directions is S2, S1 > S2 can be satisfied.

Effects of the Invention

[0011] One of the various effects of the present invention is that the reliability of the multilayer electronic component is improved by arranging a crystal phase composed of an oxide containing a rare earth element and Si on the surface of the cover portion.

[0012] One of the various effects of the present invention is that the high-temperature reliability of the multilayer electronic component is improved.

Brief Description of the Drawings

[0013]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape and size of elements in the drawings may be enlarged or reduced (or emphasized or simplified) for a clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0015] For the sake of clearly explaining the present invention in the drawings, parts not related to the description are omitted. The sizes and thicknesses of the illustrated components are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited by the illustration. Also, components having the same functions within the same concept range are described using the same reference numerals. Further, throughout the specification, when a certain part "includes" a certain component, it means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0016] In the drawings, the first direction can be defined as the stacking direction or the thickness (T) direction, the second direction as the length (L) direction, and the third direction as the width (W) direction.

[0017] Stacked electronic component FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention. FIG. 2 schematically shows a cross-sectional view taken along the line I-I' of FIG. 1. FIG. 3 schematically shows a cross-sectional view taken along the line II-II' of FIG. 1. FIG. 4 schematically shows the disassembled main body of FIG. 1. FIG. 5 is an image obtained by scanning K1 of FIG. 1 with a scanning electron microscope. FIG. 6 is an image obtained by scanning K2 of FIG. 3 with a scanning electron microscope. FIG. 7 schematically shows the shape of the crystal phase.

[0018] Hereinafter, with reference to FIGS. 1 to 7, a stacked electronic component 100 according to an embodiment of the present invention will be described in detail. Also, as an example of the stacked electronic component, a multilayer ceramic capacitor (hereinafter referred to as "MLCC") will be described, but the present invention is not limited thereto and can also be applied to various stacked electronic components using ceramic materials, such as inductors, piezoelectric elements, varistors, or thermistors.

[0019] A multilayer electronic component 100 according to an embodiment of the present invention includes a dielectric layer 111, a capacitance forming portion Ac including internal electrodes 121 and 122 alternately arranged with the dielectric layer in a first direction, and cover portions 112 and 113 arranged above and below the capacitance forming portion in the first direction. The multilayer electronic component 100 includes a main body including first and second surfaces 1 and 2 facing each other in the first direction, third and fourth surfaces 3 and 4 connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces 5 and 6 connected to the first to fourth surfaces and facing each other in a third direction, and external electrodes 131 and 132 arranged on the main body. The cover portion includes one or more crystal phases 10a composed of an oxide containing a rare earth element and Si. When an area ratio occupied by the crystal phase at a central portion of the first and second surfaces is S1 and an area ratio occupied by the crystal phase at a central portion of a cross section of the cover portion in the first and third directions is S2, S1 > S2 can be satisfied.

[0020] According to an embodiment of the present invention, by arranging a crystal phase 10a composed of an oxide containing a rare earth element and Si on the surface of the cover portion, the thermal conductivity can be lowered and heat absorption from the outside can be minimized, so that the high-temperature reliability can be improved. Further, the crystal phase 10a composed of an oxide containing a rare earth element and Si has a low coefficient of thermal expansion and can suppress the occurrence of cracks in the main body, and can lower the moisture absorption rate and improve the moisture resistance reliability.

[0021] Hereinafter, each configuration included in the multilayer electronic component 100 according to an embodiment of the present invention will be described.

[0022] In the main body 110, the dielectric layer 111 and the internal electrodes 121 and 122 can be alternately laminated.

[0023] There is no particular limitation on the specific shape of the main body 110. As shown in the figure, the main body 110 can have a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 does not have a perfect hexahedron shape with straight lines, but can substantially have a hexahedron shape.

[0024] The main body 110 can have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first and second surfaces 1 and 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the third and fourth surfaces 3 and 4 and facing each other in a third direction. The first surface 1 can be a mounting surface that is arranged to face the substrate when mounted on the substrate.

[0025] When a margin region where the internal electrodes 121 and 122 are not arranged overlaps on the dielectric layer 111, a step due to the thickness of the internal electrodes 121 and 122 occurs, and the corners connecting the first surface to the third to fifth surfaces and / or the corners connecting the second surface to the third to fifth surfaces can have a form that is shrunk toward the central side in the first direction of the main body 110 when viewed with reference to the first surface or the second surface. Alternatively, due to the shrinkage behavior during the sintering process of the main body, the corners connecting the first surface 1 to the third to sixth surfaces 3, 4, 5, 6 and / or the corners connecting the second surface 2 to the third to sixth surfaces 3, 4, 5, 6 can have a form that is shrunk toward the central side in the first direction of the main body 110 when viewed with reference to the first surface or the second surface. Alternatively, in order to prevent chipping defects or the like, by performing a separate process to round the edges connecting the respective surfaces of the main body 110, the corners connecting the first surface to the third to sixth surfaces and / or the corners connecting the second surface to the third to sixth surfaces can have a rounded form.

[0026] On the other hand, in order to suppress the step due to the internal electrodes 121 and 122, after cutting so that the internal electrodes are exposed on the fifth and sixth surfaces 5 and 6 of the main body after lamination, when a single dielectric layer or two or more dielectric layers are laminated in the third direction (width direction) on both side surfaces of the capacitance forming portion Ac to form the margin portions 114 and 115, the portions connecting the first surface to the fifth and sixth surfaces and the portions connecting the second surface to the fifth and sixth surfaces can be prevented from having a shrunk form.

[0027] The plurality of dielectric layers 111 forming the body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to the extent that they are difficult to confirm without using a scanning electron microscope (SEM). The number of stacked dielectric layers does not need to be particularly limited and can be determined in consideration of the size of the multilayer electronic component. For example, 400 or more dielectric layers can be stacked to form the body.

[0028] The dielectric layer 111 can be formed by producing a ceramic slurry containing ceramic powder, an organic solvent, and a binder, applying and drying the slurry on a carrier film to provide a ceramic green sheet, and then firing the ceramic green sheet. The ceramic powder is not particularly limited as long as a sufficient capacitance can be obtained. For example, a barium titanate (BaTiO3)-based powder can be used as the ceramic powder. More specifically, as the ceramic powder, a barium titanate (BaTiO3)-based powder, a normal dielectric powder of a CaZrO3 substrate, etc. can be used. More specifically, as the barium titanate (BaTiO3)-based powder, BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) and Ba(Ti 1-y Zr y )O3 (0 < y < 1) can be one or more of them, and the normal dielectric powder of the CaZrO3 substrate can be (Ca 1-x Sr x )(Zr 1-y Ti y )O3 (0 < x < 1, 0 < y < 1).

[0029] Therefore, the dielectric layer 111 is BaTiO3, (Ba 1-x Ca x)TiO3(0 < x < 1), Ba(Ti 1-y Ca y )O3(0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3(0 < x < 1, 0 < y < 1), Ba(Ti 1-y Zr y )O3(0 < y < 1) and (Ca 1-x Sr x )(Zr 1-y Ti y )O3(0 < x < 1, 0 < y < 1) can include one or more of them. In one embodiment, the dielectric layer 111 can include (Ca 1-x Sr x )(Zr 1-y Ti y )O3(0 < x < 1, 0 < y < 1) as a main component.

[0030] The main body 110 includes a capacitance forming portion Ac that is disposed inside the main body 110 and in which a capacitance is formed by including a first internal electrode 121 and a second internal electrode 122 that are disposed to face each other with the dielectric layer 111 interposed therebetween, and cover portions 112 and 113 that are formed above and below the capacitance forming portion Ac in a first direction.

[0031] Also, the capacitance forming portion Ac is a portion that contributes to the formation of the capacitance of the capacitor, and can be formed by repeatedly laminating a plurality of first and second internal electrodes 121 and 122 with the dielectric layer 111 interposed therebetween.

[0032] The internal electrodes 121 and 122 can include the first and second internal electrodes 121 and 122. The first and second internal electrodes 121 and 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be exposed on the third and fourth surfaces 3 and 4 of the main body 110, respectively.

[0033] The first internal electrode 121 is spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 is disposed on the third surface 3 of the main body and connected to the first internal electrode 121, and a second external electrode 132 can be disposed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0034] That is, the first internal electrode 121 is not connected to the second external electrode 132 but is connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131 but is connected to the second external electrode 132. Therefore, the first internal electrode 121 can be formed at a certain distance from the fourth surface 4, and the second internal electrode 122 can be formed at a certain distance from the third surface 3. Also, the first and second internal electrodes 121, 122 can be disposed spaced apart from the fifth and sixth surfaces of the main body 110.

[0035] The conductive metal contained in the internal electrodes 121, 122 can be one or more of Ni, Cu, Pd, Ag, Au, Pt, In, Sn, Al, Ti, and alloys thereof, but the present invention is not limited thereto.

[0036] The average thickness td of the dielectric layer 111 does not particularly need to be limited, but can be, for example, 0.1 μm to 10 μm. The average thickness te of the internal electrodes 121, 122 does not particularly need to be limited, but can be, for example, 0.05 μm to 3.0 μm. Also, the average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121, 122 can be arbitrarily set according to desired characteristics and applications. For example, in the case of an electronic component for small IT for achieving miniaturization and high capacitance, the average thickness td of the dielectric layer 111 can be 0.4 μm or less, and the average thickness te of the internal electrodes 121, 122 can be 0.4 μm or less.

[0037] The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 respectively represent the sizes of the dielectric layer 111 and the internal electrodes 121 and 122 in the first direction. The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be measured by scanning cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, for the average thickness td of the dielectric layer 111, the thickness can be measured at a number of points on one dielectric layer 111, for example, 30 points at equal intervals in the second direction, and the average value can be measured. Also, for the average thickness te of the internal electrodes 121 and 122, the thickness can be measured at a number of points on one internal electrode 121 or 122, for example, 30 points at equal intervals in the second direction, and the average value can be measured. The 30 equally spaced points can be specified by the capacitance forming portion Ac. On the other hand, after performing such average value measurements for 10 dielectric layers 111 and 10 internal electrodes 121 and 122 respectively, and then measuring the average values, the average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be further generalized.

[0038] The cover portions 112 and 113 can include an upper cover portion 112 disposed above the capacitance forming portion Ac in the first direction and a lower cover portion 113 disposed below the capacitance forming portion Ac in the first direction.

[0039] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac respectively, and can basically play a role in preventing damage to the internal electrodes due to physical or chemical stress.

[0040] The cover parts 112 and 113 can include one or more crystal phases 10a composed of an oxide containing a rare earth element and Si. The upper surface of the upper cover part 112 in the first direction can form the second surface of the main body 110, and the lower surface of the lower cover part 113 in the first direction can form the first surface of the main body 110. That is, the second surface 2 can be the upper surface of the upper cover part 112 in the first direction, and the first surface 1 can be the lower surface of the lower cover part 113 in the first direction.

[0041] According to an embodiment of the present invention, when the area ratio occupied by the crystal phase at the central part K1 of the first and second surfaces 1 and 2 is S1, and the area ratio occupied by the crystal phase at the central part K2 of the cross-section of the cover parts 112 and 113 in the first and third directions is S2, S1 > S2 can be satisfied.

[0042] Since the crystal phase 10a is composed of an oxide containing a rare earth element and Si, the crystal phase 10a can have characteristics of low thermal conductivity, low thermal expansibility, and low water absorption.

[0043] However, when the crystal phase 10a is arranged inside the cover part, it can affect the electrical characteristics of the multilayer electronic component 100. Therefore, according to an embodiment of the present invention, the area ratio S1 occupied by the crystal phase 10a at the central part K1 of the first and second surfaces 1 and 2 is made higher than the area ratio S2 occupied by the crystal phase 10a at the central part K2 of the cross-section of the cover parts 112 and 113 in the first and third directions, so that the reliability can be improved while minimizing the influence on the electrical characteristics of the multilayer electronic component 100.

[0044] The rare earth element contained in the crystal phase 10a can include one or more of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb.

[0045] In one embodiment, the rare earth element contained in the crystal phase 10a can be yttrium (Y). When the rare earth element contained in the crystal phase 10a is yttrium (Y), the characteristics of low thermal conductivity, low thermal expansibility, and low water absorbency of the crystal phase 10a can be further improved. Further, when the rare earth element contained in the crystal phase 10a is yttrium (Y), the crystal phase 10a is not added separately, but the crystal phase 10a can be easily grown in the sintering process of the main body 110, so that the crystal phase 10a can be formed without a separate process.

[0046] In one embodiment, the crystal phase 10a can be Y2Si2O7.

[0047] Y2Si2O7 has lower thermal conductivity and thermal expansion coefficient than BaTiO3 and can be advantageous for high-temperature reliability and crack suppression. The thermal conductivity of Y2Si2O7 is about 1.4 W / mK, and the coefficient of thermal expansion is about 4 ppm / K. On the other hand, the thermal conductivity of BaTiO3 is about 2.8 W / mK, and the coefficient of thermal expansion is about 10 ppm / K.

[0048] Referring to FIG. 7, in one embodiment, the crystal phase 10a can have a ratio (Lx / Sx) of the major axis Lx to the minor axis Sx of 1.5 or more and 60 or less. That is, the crystal phase 10a can have a rod shape. Thereby, the thermal conductivity can be more effectively reduced and the heat absorption from the outside can be minimized.

[0049] It is not necessary for all the crystal phases 10a contained in the cover portions 112 and 113 to satisfy the above conditions. At least one or more crystal phases 10a can satisfy a ratio (Lx / Sx) of the major axis Lx to the minor axis Sx of 1.5 or more and 60 or less, but is not limited thereto.

[0050] In one embodiment, the crystal phase 10a can have a minor axis Sx length of 0.05 μm or more and 0.5 μm or less, and a major axis Lx length of 0.1 μm or more and 3.0 μm or less.

[0051] All the crystal phases 10a included in the cover portions 112 and 113 do not necessarily have to satisfy the above conditions. At least one or more crystal phases 10a can satisfy a minor axis Sx length of 0.05 μm or more and 0.5 μm or less, and a major axis Lx length of 0.1 μm or more and 3.0 μm or less, but is not limited thereto.

[0052] In one embodiment, the area ratio S1 occupied by the crystal phase 10a at the central portion K1 of the first and second surfaces 1 and 2 can be 5% or more. By having S1 be 5% or more, the thermal conductivity can be decreased, and the effect of minimizing heat absorption from the outside can be further improved.

[0053] In one embodiment, the area ratio S1 occupied by the crystal phase 10a at the central portion K1 of the first and second surfaces 1 and 2 is 5% or more and 50% or less, and the area ratio S2 occupied by the crystal phase 10a at the central portion K2 of the cross-section of the cover portions 112 and 113 in the first and third directions can be 0% or more and 0.1% or less.

[0054] Also, S2 can be 0%, and thereby the influence on the electrical characteristics of the stacked electronic component 100 can be further minimized.

[0055] In one embodiment, the crystal phase 10a has a cross-sectional area of 1.0 μm 2 or more, and can be arranged at 0.25 pieces / μm 2 or more and 2.0 pieces / μm 2 or less on the first and second surfaces. Thereby, the effect of decreasing the thermal conductivity and minimizing heat absorption from the outside can be further improved.

[0056] Also, the crystal phase 10a has a cross-sectional area of 1.0 μm 2 or more, and can be arranged at 0.25 pieces / μm 2 or more and 2.0 pieces / μm 2Arranged below, 0.01 pieces / μm in the cross-section in the first and third directions of the cover part 2 Can be arranged below. That is, the cross-sectional area is 1.0 μm 2 The crystal phase 10a with an area of 1 or more is arranged at 0.25 or more and 2.0 or less per unit area (μm 2 ) per unit area, and 0.01 pieces / μm per unit area (μm 2 ) in the cross-section in the first and third directions of the cover part 2 Can be arranged below.

[0057] The method for measuring the area ratio and the number per unit area (μm 2 ) of the crystal phase 10a is not particularly limited. For example, when the second surface is divided into three equal parts in the second and third directions respectively, when the region located in the center and the upper cover part 112 are cut in the first and third directions at the center in the second direction and then divided into three equal parts in the first and third directions respectively, the region located in the center can be analyzed and measured by a scanning electron microscope (SEM).

[0058] Fig. 5 is an image obtained by scanning K1 in Fig. 1 with a scanning electron microscope. Referring to Fig. 5, it can be confirmed that a large number of crystal phases 10a in rod form are arranged. Also, it can be confirmed that the dielectric crystal grains 10b can be clearly distinguished from the crystal phase 10a by the contrast in light and dark even in the image. Therefore, the area ratio and the number per unit area (μm 2 ) of the crystal phase 10a can be measured by the contrast in light and dark using an image analysis program. For more accurate analysis, the scanned image can also be analyzed by SEM-EDS to measure the area ratio and the number per unit area of the crystal phase 10a. The area ratio of the crystal phase 10a is the ratio of the area occupied by the crystal phase 10a in the total area of the scanned image, and the area ratio and the number per unit area (μm 2 ) of the crystal phase 10a can be measured in a 10 μm × 10 μm region.

[0059] The cover portions 112 and 113 include a plurality of dielectric crystal grains 10b, and the crystal phase 10a can be disposed on the dielectric crystal grains 10b on the first and second surfaces. Referring to FIG. 5, it can be confirmed that the crystal phase 10a is disposed on the plurality of dielectric crystal grains 10b, and a part of the crystal phase 10a can be disposed at grain boundaries between the dielectric crystal grains 10b.

[0060] In one embodiment, the cover portions 112 and 113 are made of BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), and Ba(Ti 1-y Zr y )O3 (0 < y < 1), and can contain one or more of them as main components.

[0061] In one embodiment, the crystal phase 10a can be free of Ba and Ti. By the crystal phase 10a being free of Ba and Ti, the distinction from the dielectric crystal grains 10b can be facilitated.

[0062] In one embodiment, the cover portions 112 and 113 contain Ba, Ti, Y, Mn, and Mg, and the crystal phase 10b can be free of Ba and Ti.

[0063] The cover portion is made of BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), and Ba(Ti 1-y Zr y)It can contain one or more of O3 (0 < y < 1) as the main component and can contain 3 moles or more of Y per 100 moles of Ti. Thereby, the crystal phase 10b can be easily formed in the sintering process.

[0064] In order to confirm that a crystal phase can be easily formed when the amount of Y is 3 moles or more per 100 moles of Ti, barium titanate (BaTiO3) ceramic powder was used as the main component, and yttrium oxide (Y2O3), silicon oxide (SiO2), manganese oxide (Mn3O4), magnesium carbonate (MgCO3), etc. were added as sub-components, and an organic solvent and a binder were added to produce a ceramic slurry. The above slurry was applied and dried on a carrier film to provide a ceramic green sheet for the cover part.

[0065] After laminating the ceramic green sheet for the cover part, a ceramic green sheet printed with an internal electrode pattern was laminated, and then the ceramic green sheet for the cover part was laminated again to provide a laminate. After that, the laminate was calcined at 400 °C for 12 hours, and then a secondary calcination was performed at 850 °C for 4 hours in an inert gas atmosphere. After that, a sintering process was performed at 1,200 °C for 2 hours in a reducing atmosphere to obtain a main body.

[0066] The ceramic green sheet for the cover part of the comparative example was produced such that the contents of the sub-components Y, Si, Mn, and Mg were 1 mole, 2 moles, 0.15 mole, and 0.5 mole per 100 moles of Ti, respectively. The ceramic green sheet for the cover part of the invention example was produced such that the contents of the sub-components Y, Si, Mn, and Mg were 3 moles, 2 moles, 0.15 mole, and 0.5 mole per 100 moles of Ti, respectively.

[0067] FIG. 6 shows an observation of the second surface of the invention example, and FIG. 8 shows an observation of the second surface of the comparative example. Referring to FIG. 6, in the case of the invention example, the crystal phase 10a disposed on the dielectric crystal grains 10b is observed. In the case of the comparative example, it can be confirmed that only the dielectric crystal grains 10b' are observed and no crystal phase is observed.

[0068] The cover parts 112 and 113 may not include the internal electrodes 121 and 122. However, for the purpose of improving the warping strength, etc., the cover parts 112 and 113 may include dummy electrodes that do not participate in capacitance formation.

[0069] On the other hand, the thickness of the cover parts 112 and 113 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover parts 112 and 113 can be 15 μm or less.

[0070] The average thickness tc of the cover parts 112 and 113 can mean the size in the first direction, and can be a value obtained by averaging the sizes in the first direction of the cover parts 112 and 113 measured at five equally spaced points above or below the capacitance formation part Ac.

[0071] Also, margin parts 114 and 115 can be arranged on the side surfaces of the capacitance formation part Ac.

[0072] The margin parts 114 and 115 can include a first margin part 114 arranged on one surface of the capacitance formation part Ac in the third direction and a second margin part 115 arranged on the other surface of the capacitance formation part Ac in the third direction.

[0073] As shown in FIG. 3, the margin parts 114 and 115 can mean the regions between the boundaries of the main body 110 and both ends of the first and second internal electrodes 121 and 122 in the cross-section obtained by cutting the main body 110 in the width-thickness (W-T) direction.

[0074] The margin parts 114 and 115 can basically play a role in preventing damage to the internal electrodes due to physical or chemical stress.

[0075] The margin parts 114 and 115 can be formed by applying a conductive paste to form internal electrodes except where the margin parts are formed on the ceramic green sheet.

[0076] On the other hand, the widths of the margin portions 114 and 115 do not particularly need to be limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average width of the margin portions 114 and 115 can be 15 μm or less.

[0077] The average width of the margin portions 114 and 115 can mean the average size MW1 in the third direction of the region where the internal electrodes are separated from the fifth surface and the average size MW2 in the third direction of the region where the internal electrodes are separated from the sixth surface, and can be a value obtained by averaging the sizes in the third direction of the margin portions 114 and 115 measured at five equally spaced points on the side surface of the capacitance forming portion Ac.

[0078] Therefore, in one embodiment, the average sizes (MW1, MW2) in the third direction of the regions where the internal electrodes 121 and 122 are separated from the fifth and sixth surfaces can each be 15 μm or less.

[0079] The external electrodes 131 and 132 can be disposed on the third surface 3 and the fourth surface 4 of the main body 110.

[0080] The external electrodes 131 and 132 can be disposed on the third and fourth surfaces 3 and 4 of the main body 110, respectively, and can include first and second external electrodes 131 and 132 respectively connected to the first and second internal electrodes 121 and 122.

[0081] In this embodiment, the structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number, shape, etc. of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 and other purposes.

[0082] On the other hand, as long as the external electrodes 131 and 132 have electrical conductivity such as metal, they can be formed using any material, and specific materials can be determined in consideration of electrical characteristics, structural stability, etc., and can further have a multilayer structure.

[0083] For example, the external electrodes 131 and 132 can include electrode layers 131a and 132a disposed on the main body 110 and plating layers 131b and 132b formed on the electrode layers 131a and 132a.

[0084] More specific examples of the electrode layers 131a and 132a are that the electrode layers 131a and 132a can be fired electrodes containing a conductive metal and glass, or resin-based electrodes containing a conductive metal and resin.

[0085] Also, the electrode layers 131a and 132a can be in a form in which a fired electrode and a resin-based electrode are sequentially formed on the main body. Also, the electrode layers 131a and 132a can be formed by a method of transferring a sheet containing a conductive metal onto the main body, or can be formed by a method of transferring a sheet containing a conductive metal onto the fired electrode.

[0086] As the conductive metal contained in the electrode layers 131a and 132a, a material with excellent electrical conductivity can be used, and it is not particularly limited. For example, the conductive metal can be one or more of nickel (Ni), copper (Cu), and their alloys.

[0087] The plating layers 131b and 132b play a role in improving the mounting characteristics. The types of the plating layers 131b and 132b are not particularly limited, and can be plating layers containing one or more of Ni, Sn, Pd, and their alloys, and can be formed of a plurality of layers.

[0088] More specific examples of the plating layers 131b and 132b are that the plating layers 131b and 132b can be Ni plating layers or Sn plating layers, and can be in a form in which a Ni plating layer and an Sn plating layer are sequentially formed on the electrode layers 131a and 132a, or can be in a form in which an Sn plating layer, a Ni plating layer, and an Sn plating layer are sequentially formed. Also, the plating layers 131b and 132b can also include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0089] The size of the stacked electronic component 100 does not need to be particularly limited. For example, the length (L) of the stacked electronic component 100 can be 0.4 to 5.7 mm, the thickness (T) of the stacked electronic component 100 can be 0.1 to 3.2 mm, and the width (W) of the stacked electronic component 100 can be 0.2 to 5.0 mm.

[0090] Here, the length (L) of the stacked electronic component 100 means the maximum size in the second direction of the stacked electronic component 100, the thickness (T) of the stacked electronic component 100 means the maximum size in the first direction of the stacked electronic component 100, and the width (W) of the stacked electronic component 100 can mean the maximum size in the third direction of the stacked electronic component 100.

[0091] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, within the scope not departing from the technical idea of the present invention described in the claims, various forms of substitution, modification, and change are possible by those having ordinary knowledge in the art, and this can also be said to belong to the scope of the present invention.

[0092] In addition, the expression "one embodiment" used in the present disclosure does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, the above-presented one embodiment does not exclude being realized in combination with the features of another one embodiment. For example, even if a matter described in a specific one embodiment is not described in another one embodiment, it can be understood as an explanation related to another one embodiment as long as there is no explanation contrary to or conflicting with that matter in another one embodiment.

[0093] The terms used in the present disclosure are merely used to explain one embodiment and are not intended to limit the present disclosure. At this time, the singular expression includes the plural expression unless the context clearly indicates otherwise.

Explanation of Reference Numerals

[0094] 100 Multilayer Electronic Component 110 Body 111 Dielectric Layer 112, 113 Cover Part 114, 115 Margin Part 121, 122 Internal Electrodes 131, 132 External Electrodes 131a, 132a Electrode Layers 131b, 132b Plating Layers

Claims

1. A capacitor forming portion including a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, and cover portions arranged above and below the capacitor forming portion in the first direction, the body including first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, fifth and sixth surfaces connected to the first to fourth surfaces and facing each other in a third direction, and an external electrode disposed on the body. The cover portion includes one or more crystal phases composed of an oxide containing a rare earth element and Si. When the area ratio occupied by the crystal phase at the central portions of the first and second surfaces is S1 and the area ratio occupied by the crystal phase at the central portions of the cross-sections of the cover portion in the first and third directions is S2, a multilayer electronic component satisfying S1 > S2.

2. The multilayer electronic component according to Claim 1, wherein the rare earth element is yttrium (Y).

3. The crystal phase is Y ２ Si ２ O ７ The multilayer electronic component according to claim 1, wherein the crystal phase is Y

4. The multilayer electronic component according to Claim 1, wherein the crystal phase has a ratio of the major axis to the minor axis of 1.5 or more and 60 or less.

5. The multilayer electronic component according to Claim 1, wherein the crystal phase has a minor axis length of 0.05 μm or more and 0.5 μm or less, and a major axis length of 0.1 μm or more and 3.0 μm or less.

6. The multilayer electronic component according to Claim 1, wherein S1 is 5% or more.

7. S1 is 5% or more and 50% or less, and S2 is 0% or more and 0.1% or less. The multilayer electronic component according to Claim 1.

8. The cross-sectional area of the crystal phase is 1.0 μm ２ or more, On the first and second surfaces, 0.25 pieces / μm ２ or more and 2.0 pieces / μm ２ The stacked electronic component according to claim 1, which is disposed below.

9. The cross-sectional area of the crystal phase is 1.0 μm ２ or more, On the first and second surfaces, 0.25 pieces / μm ２ or more and 2.0 pieces / μm ２ or less are arranged, 0.01 pieces / μm in cross-section in the first and third directions of the cover portion ２ The multilayer electronic component according to claim 1, disposed below

10. The cover portion includes a plurality of dielectric crystal grains, and the crystal phase is disposed on the dielectric crystal grains at the first and second surfaces. The multilayer electronic component according to Claim 1.

11. The cover portion is BaTiO ３ , (Ba １－ｘ Ca ｘ )TiO ３ (0 < x < 1), Ba(Ti １－ｙ Ca ｙ )O ３ (0 < y < 1), (Ba １－ｘ Ca ｘ )(Ti １－ｙ Zr ｙ )O ３ (0 < x < 1, 0 < y < 1) and Ba(Ti １－ｙ Zr ｙ )O ３ The multilayer electronic component according to claim 1, comprising one or more of (0 < y < 1) as a main component.

12. The multilayer electronic component according to Claim 1, wherein the crystal phase does not contain Ba and Ti.

13. The cover portion includes Ba, Ti, Mn, and Mg, and the crystal phase does not contain Ba and Ti. The multilayer electronic component according to Claim 1.

14. The cover part is BaTiO ３ , (Ba １－ｘ Ca ｘ )TiO ３ (0 < x < 1), Ba(Ti １－ｙ Ca ｙ )O ３ (0 < y < 1), (Ba １－ｘ Ca ｘ )(Ti １－ｙ Zr ｙ )O ３ (0 < x < 1, 0 < y < 1) and Ba(Ti １－ｙ Zr ｙ )O ３ (0 < y < 1), and contains one or more of them as main components, and contains 3 moles or more of Y with respect to 100 moles of Ti. The multilayer electronic component according to claim 1.

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