Laminated type electronic component

Abstract

To provide a laminated type electronic component which is excellent in electrode connectivity and electric characteristics.SOLUTION: A laminated type capacitor includes a capacitor body including a dielectric layer, an internal electrode and an oxidation metal layer arranged between the dielectric layer and the internal electrode, and an external electrode arranged outside the capacitor body, wherein the internal electrode contains a compound represented by a chemical formula 1. The definition of chemical formula 1 is described as in the specification.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a multilayer capacitor.

Background Art

[0002] Recently, as the multifunctionalization and miniaturization of electronic devices have been rapidly progressing, the miniaturization and performance improvement of electronic components have also been rapidly advanced. In addition, the requirements for high reliability of electrical devices used in automobiles or network devices, etc., and electronic components for industrial use have been greatly increasing.

[0003] In order to meet such market requirements, the technological development competition of passive components such as inductors, capacitors, or resistors has been accelerating. In particular, in order to preempt the market in the development of various products of multilayer ceramic capacitors (MLCCs), which are passive components with continuously increasing applications and usage amounts, many efforts are required.

[0004] In addition, a multilayer capacitor is a capacitor manufactured in a form in which dielectric layers and internal electrodes are stacked, and is used in various electronic devices such as mobile phones, notebook computers, and LCD (liquid crystal) televisions.

[0005] Recently, with the development of technology, multilayer capacitors have been required to be miniaturized and have a higher capacitance. For this purpose, technological development has been carried out to increase the connectivity of the internal electrodes in contact with the dielectric layers to increase the effective electrode area, or to make the dielectric material and the internal electrode material finer.

[0006] Currently, in order to reduce the thermal shrinkage temperature difference between the dielectric layer and the internal electrode, a method of adding a nano-sized barium titanate (BaTiO3) co-material during the manufacture of the internal electrode is used.

[0007] However, when the content of the barium titanate co-material increases, the film density of the internal electrode decreases, and there is a problem that a co-material diffused into the dielectric layer during the firing process increases the thickness of the dielectric layer and causes a side effect of reducing the capacitance of the capacitor. Summary of the Invention Problems to be Solved by the Invention

[0008] One embodiment of the present invention provides a multilayer capacitor having excellent electrode connectivity and excellent electrical characteristics.

[0009] However, the problems to be solved by the embodiment are not limited to the above-described problems, and can be variously extended within the scope of the technical idea included in the embodiment. Means for Solving the Problems

[0010] A multilayer capacitor according to one embodiment of the present invention includes a capacitor body including a dielectric layer, an internal electrode, and a metal oxide layer disposed between the dielectric layer and the internal electrode, and an external electrode disposed outside the capacitor body. The internal electrode contains a compound represented by the following Chemical Formula 1. [Chemical Formula 1] M n+1 AX n In Chemical Formula 1, M includes Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, or a combination thereof, A includes Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, Au, or a combination thereof, X includes C, N, or a combination thereof, n is an integer from 1 to 4.

[0011] The compound represented by the above Chemical Formula 1 can include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC, V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3, Ti4GeC3, or a combination thereof.

[0012] The compound represented by the above Chemical Formula 1 can include the compound represented by the following Chemical Formula 1A. [Chemical Formula 1A] M n+1 A l X n In the above Chemical Formula 1A, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, A 1 includes Al or Si, X includes C, N, or a combination thereof, n is an integer from 1 to 4.

[0013] The compound represented by the chemical formula 1A can include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo, V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, or a combination thereof.

[0014] The compound represented by the chemical formula 1 can include the compound represented by the following chemical formula 1B. [Chemical formula 1B] M n+1 AlC n In the chemical formula 1B, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, n is an integer from 1 to 4.

[0015] The compound represented by the chemical formula 1B can include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, or a combination thereof.

[0016] The internal electrode further includes a conductive metal, The conductive metal can include Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Co, Mn, Cr, Pt, Sn, W, Ti, Pb, alloys thereof, or a combination thereof.

[0017] The metal oxide layer can include nickel oxide, magnesium oxide, aluminum oxide, zirconium oxide, bismuth oxide, ruthenium oxide, iridium oxide, copper oxide, cobalt oxide, zinc oxide, silver oxide, palladium oxide, gold oxide, cobalt oxide, manganese oxide, chromium oxide, platinum oxide, tin oxide, tungsten oxide, titanium oxide, lead oxide, or a combination thereof.

[0018] The dielectric layer mainly includes a barium titanate-based compound, The barium titanate-based compound is Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, x ≤ 0.10), (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), or combinations thereof.

[0019] A multilayer capacitor according to another embodiment includes a capacitor body including a dielectric layer, an internal electrode containing a conductive metal, and a metal oxide layer disposed between the dielectric layer and the internal electrode, and an external electrode disposed outside the capacitor body. The internal electrode contains a compound represented by the following Chemical Formula 1. [Chemical Formula 1] M n+1 AX n In Chemical Formula 1, M includes Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, or combinations thereof, A includes Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, Au, or combinations thereof, X includes C, N, or combinations thereof, n is an integer from 1 to 4.

[0020] The compound represented by the above Chemical Formula 1 can include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo, V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC, V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3, Ti4GeC3, or combinations thereof.

[0021] The compound represented by the above Chemical Formula 1 can include the compound represented by the following Chemical Formula 1A. [Chemical Formula 1A] M n+1 A l X n In the above Chemical Formula 1A, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or combinations thereof, A 1 includes Al or Si, X includes C, N, or combinations thereof, n is an integer from 1 to 4.

[0022] The compound represented by the chemical formula 1A can include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo, V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, or a combination thereof.

[0023] The compound represented by the chemical formula 1 can include the compound represented by the following chemical formula 1B. [Chemical formula 1B] M n+1 AlC n In the chemical formula 1B, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, n is an integer from 1 to 4.

[0024] The compound represented by the chemical formula 1B can include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, or a combination thereof.

[0025] The conductive metal included in the internal electrode can include Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Co, Mn, Cr, Pt, Sn, W, Ti, Pb, alloys thereof, or a combination thereof.

[0026] The metal oxide layer can include nickel oxide, magnesium oxide, aluminum oxide, zirconium oxide, bismuth oxide, ruthenium oxide, iridium oxide, copper oxide, cobalt oxide, zinc oxide, silver oxide, palladium oxide, gold oxide, cobalt oxide, manganese oxide, chromium oxide, platinum oxide, tin oxide, tungsten oxide, titanium oxide, lead oxide, or a combination thereof.

[0027] The dielectric layer mainly contains a barium titanate-based compound. The barium titanate-based compound is Bam TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, x ≤ 0.10), (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), or combinations thereof.

Advantages of the Invention

[0028] According to the multilayer capacitor according to an embodiment of the present invention, there are advantages of excellent electrode connectivity and excellent electrical characteristics.

[0029] However, the various and beneficial advantages and effects of the present invention are not limited to the above-described content and should be more easily understood in the process of describing specific embodiments of the present invention.

Brief Description of the Drawings

[0030]

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Figure 9

MODE FOR CARRYING OUT THE INVENTION

[0031] Hereinafter, embodiments of the present invention will be described in detail so that those having ordinary knowledge in the technical field to which the present invention pertains can easily implement it with reference to the attached drawings. In order to clearly explain the present invention in the drawings, parts that are unnecessary for the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification. Also, the attached drawings are merely for facilitating the understanding of the embodiments disclosed in this specification, and the technical idea disclosed in this specification is not limited by the attached drawings, and it must be understood that all modifications, equivalents, or alternatives included in the idea and technical scope of the present invention are included.

[0032] Terms including ordinal numbers such as first, second, etc. can be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

[0033] When a component is referred to as being "connected to" or "attached to" another component, it should be understood that it may be directly connected to, attached to, or opposite to the other component, but there may also be other components in between. On the contrary, when a component is referred to as being "directly connected to" or "directly attached to" another component, it should be understood that there are no other components in between.

[0034] Throughout the specification, terms such as "including" or "having" are intended to specify the presence of the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and it must be understood that the presence or addition possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof is not precluded in advance. Therefore, when a part "includes" a certain component, this means that it can further include other components rather than excluding other components unless otherwise stated to the contrary.

[0035] FIG. 1 is a perspective view showing a multilayer capacitor 100 according to an embodiment, FIG. 2 is a cross-sectional view of the multilayer capacitor 100 taken along line I-I' of FIG. 1, and FIG. 3 is an exploded perspective view showing the laminated structure of internal electrodes in the capacitor body 110 of FIG. 1.

[0036] To clearly explain this embodiment, if directions are defined, the L-axis, W-axis, and T-axis shown in the drawings indicate the length direction, width direction, and thickness direction of the capacitor body 110, respectively. Here, the thickness direction (T-axis direction) may be a direction perpendicular to the wide surface (main surface) of the sheet-shaped component, and as an example, it can be used as the same concept as the lamination direction in which the dielectric layer 111 is laminated. The length direction (L-axis direction) may be a direction that extends parallel to the wide surface (main surface) of the sheet-shaped component and is substantially perpendicular to the thickness direction (T-axis direction), and as an example, it may be the direction in which the first external electrode 131 and the second external electrode 132 are located on both sides. The width direction (W-axis direction) may be a direction that extends parallel to the wide surface (main surface) of the sheet-shaped component and is substantially perpendicular to the thickness direction (T-axis direction) and the length direction (L-axis direction), and the length of the sheet-shaped component in the length direction (L-axis direction) may be even longer than the length in the width direction (W-axis direction).

[0037] Referring to FIGS. 1 to 3, a multilayer capacitor 100 according to an embodiment can include a capacitor body 110 and first and second external electrodes 131 and 132 disposed at both ends facing the length direction (L-axis direction) of the capacitor body 110.

[0038] The capacitor body 110 may be, for example, a substantially hexahedral shape.

[0039] In this embodiment, for convenience of explanation, the two surfaces of the capacitor body 110 facing each other in the thickness direction (T-axis direction) are defined as the first surface and the second surface, the two surfaces connected to the first surface and the second surface and facing each other in the length direction (L-axis direction) are defined as the third surface and the fourth surface, and the two surfaces connected to the first surface and the second surface and connected to the third surface and the fourth surface and facing each other in the width direction (W-axis direction) are defined as the fifth surface and the sixth surface.

[0040] As an example, the first surface, which is the bottom surface, can be the surface facing the mounting direction. Also, the first to sixth surfaces may be flat, but the present embodiment is not limited to this. For example, the first to sixth surfaces may be curved surfaces convex at the center, and the corners that are the boundaries of each surface may be rounded.

[0041] The shape, dimensions, and number of stacked dielectric layers 111 of the capacitor body 110 are not limited to those shown in the drawings of the present embodiment.

[0042] The capacitor body 110 is formed by firing after laminating a plurality of dielectric layers 111 in the thickness direction (T-axis direction), and includes a first internal electrode 121 and a second internal electrode 122 that are alternately arranged in the thickness direction (T-axis direction) with the plurality of dielectric layers 111 interposed therebetween.

[0043] At this time, the boundaries between the respective adjacent dielectric layers 111 of the capacitor body 110 can be integrated to such an extent that it is difficult to confirm without using a scanning electron microscope (SEM).

[0044] Also, the capacitor body 110 can include an active region and cover regions 112 and 113.

[0045] The active region is a portion that contributes to the formation of the capacitance of the multilayer capacitor 100. As an example, the active region may be a region where the first internal electrode 121 or the second internal electrode 122 stacked along the thickness direction (T-axis direction) overlaps.

[0046] The cover regions 112 and 113 are margin portions in the thickness direction and can be respectively arranged on the first surface and the second surface sides of the active region in the thickness direction (T-axis direction). Such cover regions 112 and 113 may be formed by laminating a single dielectric layer 111 or two or more dielectric layers 111 on the upper surface and the lower surface of the active region, respectively.

[0047] Further, the capacitor body 110 can further include side cover regions. The side cover regions are widthwise margin portions and can be respectively arranged on the fifth and sixth surface sides of the active region in the width direction (W-axis direction). Such side cover regions can be formed by applying a conductive paste layer for forming an internal electrode only to a partial region of the surface of the dielectric green sheet when applying the conductive paste layer to the surface of the dielectric green sheet, laminating dielectric green sheets without applying the conductive paste layer to both side surfaces of the surface of the dielectric green sheet, and then firing.

[0048] The cover regions 112 and 113 and the side cover regions serve to prevent damage to the first internal electrode 121 and the second internal electrode 122 due to physical or chemical stress.

[0049] The multilayer capacitor 100 according to one embodiment includes a capacitor body 110 including a dielectric layer 111, internal electrodes 121 and 122, and a metal oxide layer disposed between the dielectric layer 111 and the internal electrodes 121 and 122, and external electrodes 131 and 132 disposed outside the capacitor body 110.

[0050] Hereinafter, the multilayer capacitor 100 will be described in detail with reference to the drawings.

[0051] Internal electrode The first internal electrode 121 and the second internal electrode 122 are electrodes having different polarities from each other, and are alternately arranged so as to face each other along the T-axis direction with the dielectric layer 111 interposed therebetween, and one end of each is exposed through the third and fourth surfaces of the capacitor body 110.

[0052] The first internal electrode 121 and the second internal electrode 122 can be electrically insulated from each other by the dielectric layer 111 disposed in the middle.

[0053] The ends of the first internal electrode 121 and the second internal electrode 122 that are alternately exposed through the third and fourth surfaces of the capacitor body 110 can be connected to the first external electrode 131 and the second external electrode 132 respectively and electrically connected.

[0054] In one embodiment, the internal electrodes 121, 122 include a compound represented by the following Chemical Formula 1. [Chemical Formula 1] M n+1 AX n In Chemical Formula 1, M includes Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, or a combination thereof, A includes Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, Au, or a combination thereof, X includes C, N, or a combination thereof, n is an integer from 1 to 4.

[0055] As an example, the compound represented by Chemical Formula 1 may be a MAX phase compound. The MAX phase compound is a compound having all the properties of metals and ceramics, and is characterized by very excellent thermal conductivity and electrical conductivity, and high strength and modulus.

[0056] As an example, since the sintering temperature of the MAX phase compound is higher than that of metals such as Ni, the difference in sintering temperature from the dielectric material of the dielectric layer 111 may not be large. Thus, when the internal electrodes 121, 122 containing the MAX phase compound and the dielectric layer 111 are fired together, no mismatching problem occurs between the dielectric layer 111, preventing breakage and thickness expansion of the internal electrodes 121, 122 and significantly improving electrode connectivity.

[0057] As an example, the compound represented by the chemical formula 1 may include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo, V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC, V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3, Ti4GeC3, or a combination thereof.

[0058] As an example, the compound represented by the chemical formula 1 may include the compound represented by the following chemical formula 1A. [Chemical formula 1A] M n+1 A l X n In the chemical formula 1A, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, A 1 includes Al or Si, X includes C, N, or a combination thereof, n is an integer from 1 to 4.

[0059] As an example, the compound represented by the chemical formula 1A may include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo, V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, or a combination thereof.

[0060] As an example, the compound represented by the chemical formula 1 may include the compound represented by the following chemical formula 1B. [Chemical formula 1B] M n+1 AlC n In the chemical formula 1B, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, and n is an integer from 1 to 4.

[0061] As an example, the compound represented by the chemical formula 1B may include Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, or a combination thereof.

[0062] As an example, the internal electrodes 121 and 122 may further include a conductive metal, and the conductive metal may be the same as or different from the sacrificial metal described later. As an example, a part of the sacrificial metal contained in the conductive paste for the internal electrode may be trapped in the internal electrodes 121 and 122 without being oxidized during the firing process.

[0063] As an example, the conductive metal contained in the internal electrodes 121 and 122 may include Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Co, Mn, Cr, Pt, Sn, W, Ti, Pb, alloys thereof, or a combination thereof.

[0064] Further, the internal electrodes 121 and 122 can also contain dielectric particles of the same composition system as the ceramic material contained in the dielectric layer 111.

[0065] As an example, the internal electrodes 121 and 122 can be formed using a conductive paste containing a conductive metal. As the printing method of the conductive paste, a screen printing method, a gravure printing method, or the like can be used.

[0066] As an example, the average thickness of the first internal electrode 121 and the second internal electrode 122 can be 0.05 μm or more, 0.1 μm or more, 0.2 μm or more, or 0.25 μm or more, and can be 2 μm or less, 1 μm or less, or 0.5 μm or less.

[0067] The average thickness of the internal electrodes 121 and 122 can be measured by the following method.

[0068] First, after putting the multilayer capacitor 100 into an epoxy mixture and curing it, the side surfaces of the capacitor body 110 in the L-axis direction and the T-axis direction are polished to the 1 / 2 point in the W-axis direction, fixed, and maintained in a vacuum atmosphere chamber, and a cross-sectional sample (hereinafter referred to as "cross-sectional sample") cut from the center of the capacitor body 110 in the W-axis direction in the L-axis direction and the T-axis direction is prepared.

[0069] Thereafter, in the scanning electron microscope (SEM) image of the cross-sectional sample, taking the central point of the first internal electrode 121 or the second internal electrode 122 in the L-axis direction or the W-axis direction as a reference point, the arithmetic mean value of the thicknesses of the internal electrodes 121 and 122 at 10 points separated from the reference point at a predetermined interval can be obtained to obtain the average thickness of the internal electrode.

[0070] The interval between the 10 points can be adjusted according to the scale of the scanning electron microscope (SEM) image, and for example, the interval can be 1 μm to 100 μm, 1 μm to 50 μm, or 1 μm to 10 μm.

[0071] At this time, all 10 points must be located within the first internal electrode 121 or the second internal electrode 122. If all 10 points are not located within the first internal electrode 121 or the second internal electrode 122, the position of the reference point can be changed, or the interval between the 10 points can be adjusted.

[0072] Metal oxide layer The multilayer capacitor 100 according to one embodiment includes a metal oxide layer (not shown) disposed between the dielectric layer 111 and the internal electrodes 121 and 122. The metal oxide layer may be a reaction blocking layer that suppresses oxidation of the MAX phase compound contained in the internal electrodes 121 and 122.

[0073] When only the MAX phase compound is included in the conductive paste for the internal electrode and fired, the elements constituting the MAX phase are oxidized and the MAX phase compound is decomposed. When the compound represented by Chemical Formula 1 is fired in an oxygen atmosphere, the relatively weakly bonded A element is oxidized while forming an A-oxide, whereby the compound represented by Chemical Formula 1 is decomposed. When A is oxidized and escapes from the compound represented by Chemical Formula 1, the MAX phase compound is decomposed into a binary compound or the like. In this case, the MAX phase compound may be removed and the electrical characteristics of the internal electrodes 121 and 122 may deteriorate.

[0074] In contrast, in the case of the multilayer capacitor 100 according to one embodiment, when forming the internal electrode, a metal having excellent metal reactivity (hereinafter, may also be referred to as a "sacrificial metal") is added to the MAX phase compound and fired together, and the metal can be first oxidized during firing to form a metal oxide layer.

[0075] As an example, the MAX phase compound undergoes phase decomposition at about 900 °C to 1000 °C, and in the case of the sacrificial metal, an oxidation reaction occurs at a temperature of about 900 °C or lower, so it is first oxidized compared to the MAX phase compound. As an example, Ti can be oxidized at about 600 °C, Mg at about 450 °C, and Cr at about 650 °C.

[0076] The formed metal oxide layer can prevent the decomposition of the MAX phase compound and improve the electrical characteristics of the multilayer capacitor 100.

[0077] As an example, the metal oxide layer can contain a metal oxide, and the metal oxide can be appropriately selected according to the type of A contained in Chemical Formula 1. The metal oxide may be an oxide formed by oxidizing the sacrificial metal contained in the conductive paste for the internal electrode.

[0078] As an example, the metal oxide can contain Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Co oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide, Pb oxide, or a combination thereof.

[0079] Dielectric layer The dielectric layer 111 contains a dielectric, and the dielectric can contain a main component and a sub-component.

[0080] The main component is the base material of the dielectric, has a high dielectric constant, and contributes to forming the dielectric constant of the multilayer capacitor 100.

[0081] As an example, the main component contains a barium titanate-based compound, and the barium titanate-based compound is Ba m TiO3 (0.995 ≦ m ≦ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≦ m ≦ 1.010, 0 ≦ x ≦ 0.10, 0 < y ≦ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≦ m ≦ 1.010, x ≦ 0.10), (Ba 1-x Ca x ) m (Ti 1-y Sn y)It may be a dielectric material containing O3 (0.995 ≦ m ≦ 1.010, 0 ≦ x ≦ 0.10, 0 < y ≦ 0.20), or a combination thereof.

[0082] As an example, the main component can include BaTiO3, Ba(Ti,Zr)O3, Ba(Ti,Sn)O3, (Ba,Ca)TiO3, (Ba,Ca)(Ti,Zr)O3, (Ba,Ca)(Ti,Sn)O3, (Ba,Sr)TiO3, (Ba,Sr)(Ti,Zr)O3, (Ba,Sr)(Ti,Sn)O3, or a combination thereof.

[0083] As an example, the sub-components can include dysprosium (Dy), vanadium (V), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), germanium (Ge), gallium (Ga), barium (Ba), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), indium (In), or a combination thereof.

[0084] The dielectric may further include a ceramic additive, an organic solvent, a binder, a dispersant, or a combination thereof.

[0085] As an example, the average thickness of the dielectric layer 111 may be 0.2 μm or more, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more, and may also be 5.0 μm or less, or 3.0 μm or less.

[0086] The average thickness of the dielectric layer 111 can be measured by the following method.

[0087] First, prepare a scanning electron microscope image obtained by observing a cross-sectional sample with a scanning electron microscope (SEM).

[0088] In the scanning electron microscope (SEM) image of the cross-sectional sample, it may be the arithmetic mean value of the thickness of the dielectric layer 111 at 10 points separated from a reference point at a predetermined interval with the central point in the length direction (L-axis direction) or the width direction (W-axis direction) of the dielectric layer 111 as the reference point.

[0089] The interval between the 10 points can be adjusted according to the scale of the scanning electron microscope (SEM) image, and may be, for example, an interval of 1 μm to 100 μm, 1 μm to 50 μm, or 1 μm to 10 μm.

[0090] At this time, all 10 points must be located within the dielectric layer 111. If all 10 points are not located within the dielectric layer 111, the position of the reference point can be changed, or the interval between the 10 points can be adjusted.

[0091] External electrode The first external electrode 131 and the second external electrode 132 are provided with voltages of different polarities and are respectively connected to the exposed portions of the first internal electrode 121 and the second internal electrode 122 to be electrically connected.

[0092] With the above configuration, when a predetermined voltage is applied to the first external electrode 131 and the second external electrode 132, charges are accumulated between the first internal electrode 121 and the second internal electrode 122 facing each other. At this time, the capacitance of the multilayer capacitor 100 is proportional to the overlapping area of the first internal electrode 121 and the second internal electrode 122 that overlap each other along the T-axis direction in the active region.

[0093] The first external electrode 131 and the second external electrode 132 are respectively disposed on the third surface and the fourth surface of the capacitor body 110, and include first connection portions and second connection portions connected to the first internal electrode 121 and the second internal electrode 122, the third surface and the fourth surface of the capacitor body 110, and first band portions and second band portions disposed at corners where the first surface and the second surface or the fifth surface and the sixth surface are in contact.

[0094] The first band portion and the second band portion are respectively extended from the first connection portion and the second connection portion to a part of the first surface and the second surface or the fifth surface and the sixth surface of the capacitor body 110. The first band portion and the second band portion serve to improve the adhesion strength of the first external electrode 131 and the second external electrode 132.

[0095] As an example, the first external electrode 131 and the second external electrode 132 may each include a sintered metal layer in contact with the capacitor body 110, a conductive resin layer disposed to cover the sintered metal layer, and a plating layer disposed to cover the conductive resin layer.

[0096] The sintered metal layer may include a conductive metal and glass.

[0097] As an example, the sintered metal layer may include copper (Cu), nickel (Ni), silver (Ag), palladium (Pd), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), lead (Pb), alloys thereof, or combinations thereof as the conductive metal. For example, copper (Cu) may include a copper (Cu) alloy. When the conductive metal includes copper, the metal other than copper may be included in an amount of 5 mol parts or less per 100 mol parts of copper.

[0098] As an example, the sintered metal layer can include a composition in which an oxide is mixed as glass, and for example, it may be one or more selected from the group consisting of silicon oxide, boron oxide, aluminum oxide, transition metal oxide, alkali metal oxide, and alkaline earth metal oxide. The transition metal is selected from the group consisting of zinc (Zn), titanium (Ti), copper (Cu), vanadium (V), manganese (Mn), iron (Fe), and nickel (Ni), the alkali metal is selected from the group consisting of lithium (Li), sodium (Na), and potassium (K), and the alkaline earth metal may be one or more selected from the group consisting of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

[0099] Optionally, the conductive resin layer is formed on the sintered metal layer and can be formed, for example, in a form that completely covers the sintered metal layer. On the other hand, the first external electrode 131 and the second external electrode 132 may not include the sintered metal layer. In this case, the conductive resin layer may be in direct contact with the capacitor body 110.

[0100] The conductive resin layer extends to the first and second surfaces or the fifth and sixth surfaces of the capacitor body 110, and the length of the region (i.e., the band portion) where the conductive resin layer extends and is disposed on the first and second surfaces or the fifth and sixth surfaces of the capacitor body 110 may be longer than the length of the region (i.e., the band portion) where the sintered metal layer extends and is disposed on the first and second surfaces or the fifth and sixth surfaces of the capacitor body 110. That is, the conductive resin layer is formed on the sintered metal layer and can be formed in a form that completely covers the sintered metal layer.

[0101] The conductive resin layer includes a resin and a conductive metal.

[0102] The resin contained in the conductive resin layer is not particularly limited as long as it has bonding properties and shock absorption properties and can be mixed with the conductive metal powder to make a paste. For example, it can include a phenol resin, an acrylic resin, a silicon resin, an epoxy resin, or a polyimide resin.

[0103] The conductive metal contained in the conductive resin layer serves to be electrically connected to the first internal electrode 121 and the second internal electrode 122 or the sintered metal layer.

[0104] The conductive metal contained in the conductive resin layer can have a spherical, flake-shaped, or a combination of these forms. That is, the conductive metal may consist only of flake shape, or only of spherical shape, or may be a form in which flakes and spheres are mixed.

[0105] Here, the spherical shape can also include a shape that is not a perfect sphere. For example, it can include a shape in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. The flake-shaped powder means a powder having a flat and elongated shape, and is not particularly limited. For example, the length ratio of the major axis to the minor axis (major axis / minor axis) may be 1.95 or more.

[0106] The first external electrode 131 and the second external electrode 132 can further include a plating layer disposed outside the conductive resin layer.

[0107] The plating layer can include a single or an alloy of nickel (Ni), copper (Cu), tin (Sn), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), tungsten (W), titanium (Ti), or lead (Pb), etc. As an example, the plating layer may be a nickel (Ni) plating layer or a tin (Sn) plating layer, or may be a form in which a nickel (Ni) plating layer and a tin (Sn) plating layer are sequentially laminated, or may be a form in which a tin (Sn) plating layer, a nickel (Ni) plating layer, and a tin (Sn) plating layer are sequentially laminated. Also, the plating layer can include a plurality of nickel (Ni) plating layers and / or a plurality of tin (Sn) plating layers.

[0108] The plating layer can improve the mountability with the substrate of the multilayer capacitor 100, the structural reliability, the durability against the outside, the heat resistance, and the equivalent series resistance (ESR).

[0109] Manufacturing method of multilayer capacitor The manufacturing method of the multilayer capacitor according to another embodiment includes a step of manufacturing a capacitor body including a dielectric layer and an internal electrode, and a step of forming an external electrode outside the capacitor body.

[0110] First, the manufacturing of the capacitor body will be described.

[0111] In the manufacturing process of the capacitor body, a dielectric paste that becomes a dielectric layer after firing and a conductive paste that becomes an internal electrode after firing are prepared.

[0112] The dielectric paste is manufactured, for example, by the following method. The dielectric powder is uniformly mixed by means such as wet mixing, dried, and then heat-treated under predetermined conditions to obtain a plastic powder. An organic vehicle or an aqueous vehicle is added to the obtained plastic powder and kneaded to prepare a dielectric paste.

[0113] The obtained dielectric paste is sheeted by a technique such as the doctor blade method to obtain a dielectric green sheet. The dielectric paste may also contain additives selected from various dispersants, plasticizers, dielectrics, sub-component compounds, or glass as necessary.

[0114] The conductive paste for the internal electrode is prepared by kneading a compound represented by the following Chemical Formula 1 and a conductive metal that serves as a sacrificial metal with a binder and a solvent. [Chemical Formula 1] M n+1 AX n In the above Chemical Formula 1, M includes Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, or a combination thereof, A contains Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, Au, or a combination thereof, X contains C, N, or a combination thereof, n is an integer from 1 to 4.

[0115] Since the compound represented by Chemical Formula 1 and the conductive metal serving as the sacrificial metal are as described above, detailed descriptions are omitted here.

[0116] The compound represented by Chemical Formula 1 is contained in the conductive paste for the internal electrode at 1 wt% to 10 wt%.

[0117] When the compound represented by Chemical Formula 1 is contained in the conductive paste for the internal electrode at less than 1 wt%, it is difficult to form an oxide metal layer with sufficient thickness, and the MAX phase compound contained in the internal electrode is decomposed. Also, when the compound represented by Chemical Formula 1 is contained in the conductive paste for the internal electrode at more than 10 wt%, the electrode connectivity may not be sufficiently improved.

[0118] On the surface of the dielectric green sheet, the conductive paste for the internal electrode is applied in a predetermined pattern by various printing methods such as screen printing or transfer methods. Then, after laminating the dielectric green sheets with the internal electrode patterns formed thereon in multiple layers, a dielectric green sheet laminate is obtained by pressing in the lamination direction. At this time, the dielectric green sheet and the internal electrode pattern can be laminated so that the dielectric green sheet is positioned on the upper and lower surfaces in the lamination direction of the dielectric green sheet laminate.

[0119] Optionally, the obtained dielectric green sheet laminate can be cut into a predetermined size by dicing or the like.

[0120] Also, the dielectric green sheet laminate can be solidified and dried to remove a plasticizer or the like if necessary, and can be barrel polished using a horizontal centrifugal barrel polishing machine or the like after solidification and drying. In barrel polishing, the dielectric green sheet laminate is put into a barrel container together with media and a polishing liquid, and rotational motion, vibration, or the like is applied to the barrel container to polish unnecessary portions such as bars generated during cutting. Further, after barrel polishing, the dielectric green sheet laminate can be washed with a cleaning liquid such as water and dried.

[0121] The dielectric green sheet laminate is subjected to a debinding process and a firing process to obtain a capacitor body.

[0122] The conditions of the debinding process can be appropriately adjusted according to the main component composition of the dielectric layer and the main component composition of the internal electrode. For example, the heating rate during the debinding process may be 5°C / hour to 300°C / hour, the holding temperature may be 180°C to 400°C, and the temperature holding time may be 0.5 hour to 24 hours. The debinding atmosphere may be air or a reducing atmosphere.

[0123] The conditions of the firing process can be appropriately adjusted according to the main component composition of the dielectric layer and the main component composition of the internal electrode. For example, the temperature during firing may be 1200°C to 1350°C, or 1220°C to 1300°C, and the time may be 0.5 hour to 8 hours, or 1 hour to 3 hours. The firing atmosphere may be a reducing atmosphere, for example, an atmosphere in which a mixed gas of nitrogen gas (N2) and hydrogen gas (H2) is humidified.

[0124] After the firing process, annealing can be performed as necessary. Annealing is a process for re-oxidizing the dielectric layer, and can be performed when the firing process is carried out in a reducing atmosphere. The conditions of the annealing process can also be appropriately adjusted according to the main component composition of the dielectric layer and the like. For example, the temperature during annealing may be 950°C to 1150°C, the time may be 0 hours to 20 hours, and the heating rate may be 50°C / hour to 500°C / hour. The annealing atmosphere may be a humidified nitrogen gas (N2) atmosphere, and the oxygen partial pressure may be 1.0×10 -9 MPa to 1.0×10 -5 MPa.

[0125] In the debinding process, firing process, or annealing process, in order to humidify nitrogen gas, mixed gas, etc., a wetter or the like can be used, and in this case, the water temperature may be 5°C to 75°C. The debinding process, firing process, and annealing process can be carried out continuously or independently.

[0126] Optionally, surface treatment such as sandblasting, laser irradiation, or barrel polishing can be performed on the third and fourth surfaces of the obtained capacitor body. By performing such surface treatment, the ends of the first internal electrode and the second internal electrode are exposed on the outermost surfaces of the third and fourth surfaces, whereby the electrical connection between the first external electrode and the second external electrode and the first internal electrode and the second internal electrode is improved, and an alloy part can be easily formed.

[0127] Thereafter, a paste for forming a sintered metal layer can be applied to the outer surface of the obtained capacitor body and then sintered to form a sintered metal layer.

[0128] The paste for forming a sintered metal layer can contain a conductive metal and glass. Since the description of the conductive metal and glass is as described above, repetitive explanations are omitted. Further, the paste for forming a sintered metal layer can selectively contain sub-components such as a binder, a solvent, a dispersant, a plasticizer, or oxide powder. For example, ethyl cellulose, acrylic, or butyral can be used as the binder, and organic solvents such as terpineol, butyl carbitol, alcohol, methyl ethyl ketone, acetone, or toluene, or aqueous solvents can be used as the solvent.

[0129] As a method for applying the paste for forming a sintered metal layer to the outer surface of the capacitor body, a dipping method, various printing methods such as screen printing, an application method using a dispenser, or a spraying method using a spray can be used. The paste for the sintered metal layer is applied to at least the third and fourth surfaces of the capacitor body, and can also be selectively applied to a part of the first surface, the second surface, the fifth surface, or the sixth surface where the band portions of the first external electrode and the second external electrode are formed.

[0130] Thereafter, the capacitor body coated with the paste for forming a sintered metal layer is dried and sintered at a temperature of 700°C to 1000°C for 0.1 hour to 3 hours to form a sintered metal layer.

[0131] Optionally, a conductive resin layer can be formed by applying a paste for forming a conductive resin layer to the outer surface of the obtained capacitor body and then curing it.

[0132] The paste for forming a conductive resin layer can contain a resin and, optionally, a conductive metal or a non-conductive filler. Since the descriptions of the conductive metal and the resin are as described above, repetitive explanations are omitted. Further, the paste for forming a conductive resin layer can optionally contain sub-components such as a binder, a solvent, a dispersant, a plasticizer, or oxide powder. For example, as the binder, ethyl cellulose, acrylic, or butyral can be used, and as the solvent, organic solvents such as terpineol, butyl carbitol, alcohol, methyl ethyl ketone, acetone, or toluene, or aqueous solvents can be used.

[0133] As an example, the method for forming a conductive resin layer can be to dip the capacitor body 110 into the paste for forming a conductive resin layer and then cure it, or to print the paste for forming a conductive resin layer on the surface of the capacitor body 110 by a screen printing method or a gravure printing method, or to apply the paste for forming a conductive resin layer on the surface of the capacitor body 110 and then cure it to form.

[0134] Thereafter, a plating layer is formed outside the conductive resin layer.

[0135] As an example, the plating layer can be formed by a plating method, and can also be formed by sputtering or electric deposition.

[0136] Hereinafter, specific embodiments of the invention will be presented. However, the embodiments described below are only for specifically exemplifying or explaining the invention, and the scope of the invention should not be limited thereby.

Example

[0137] Production Example: Production of Conductive Paste for Internal Electrodes A conductive paste for an internal electrode containing Ti3AlC2 and Ni as a sacrificial metal was manufactured. Specifically, after weighing the materials so that Ni was contained at 4.6% by weight based on the total weight of the conductive paste for the internal electrode, Ti3AlC2 and Ni were mixed by the Ram-mixing method to manufacture a conductive paste for the internal electrode.

[0138] Example: Manufacture of a multilayer capacitor Example 1 A slurry for a dielectric containing BaTiO3 was manufactured, and a dielectric green sheet was manufactured using an on-roll coater of the head discharge method with the slurry for the dielectric.

[0139] The conductive paste for the internal electrode manufactured in the above production example was printed on the surface of the dielectric green sheet, and the dielectric green sheet (width × length × height = 3.2 mm × 2.5 mm × 2.5 mm) having a conductive paste layer formed thereon was laminated and pressed to manufacture a dielectric green sheet laminate.

[0140] The dielectric green sheet laminate was subjected to a plasticizing process in a nitrogen atmosphere at 400°C or lower and then fired under the conditions of a firing temperature of 1300°C or lower and a hydrogen concentration of 1.0% H2 or lower to manufacture a multilayer capacitor according to Example 1.

[0141] Comparative Example 1 A multilayer capacitor according to Comparative Example 1 was manufactured in the same manner as in Example 1, except that a capacitor was manufactured with a conductive paste for an internal electrode containing Ni and a sintering aid (BaTiO3).

[0142] Comparative Example 2 A multilayer capacitor according to Comparative Example 2 was manufactured in the same manner as in Example 1, except that a capacitor was manufactured with a conductive paste for an internal electrode containing only Ti3AlC2 without Ni as a sacrificial metal.

[0143] (Evaluation Example) Evaluation Example 1: Elemental analysis of the conductive paste for the internal electrode Figure 4 is an SEM image of the conductive paste for internal electrodes according to the production example, and is an image obtained by mapping (b) Ti, (c) Al, (d) C, and (e) Ni to the SEM image.

[0144] Referring to Figure 4, it was confirmed that the conductive paste for internal electrodes according to the production example contains the constituent elements of Ti3AlC2 and Ni, which is a sacrificial metal. Further, as a result of measuring the content (weight %) of the conductive paste for internal electrodes by Ni mapping, it was confirmed that Ni is contained at 4.6% by weight in the conductive paste for internal electrodes according to the above production example.

[0145] Evaluation Example 2: Micro XRD Evaluation After the multilayer capacitors according to Example 1 and Comparative Example 1 were put into an epoxy mixture and cured, the side surfaces in the L-axis direction and T-axis direction of the capacitor body were polished to the 1 / 2 point in the W-axis direction, fixed, and maintained in a vacuum atmosphere chamber. Cross-sectional samples cut in the L-axis direction and T-axis direction from the center in the W-axis direction of the capacitor body 110 were respectively prepared.

[0146] Micro XRD analysis was performed within the range including the internal electrodes of the cross-sectional samples and the interfaces between the internal electrodes and the dielectric layers, and is shown in Figures 5 and 6 respectively.

[0147] In addition, cross-sectional samples before firing the dielectric green sheet laminate during the production of the multilayer capacitors according to Example 1 and Comparative Example 1 were prepared, and Micro XRD analysis was performed on these, and is shown in Figures 5 and 6 respectively.

[0148] Figure 5 shows the XRD analysis results before firing and after firing during the production of the multilayer capacitor according to Example 1. Figure 6 shows the XRD analysis results before firing and after firing during the production of the multilayer capacitor according to Comparative Example 1.

[0149] Referring to FIG. 5, in the case of Example 1, before firing, the peak of Ti3AlC2 was mainly confirmed. After firing, an Ni oxide layer was formed, which could prevent the oxidation of Al. Therefore, it was confirmed that the peak of Al2O3 was very weak.

[0150] Referring to FIG. 6, in the case of Comparative Example 1, different from Example 1, after firing, first, Al with relatively weak bonding in Ti3AlC2 was oxidized to form an Al2O3 layer. Then, Ti was oxidized to form a TiO2 layer on the Al2O3 layer. It was confirmed that Al2O3 and TiO2 showed the main peaks.

[0151] Evaluation Example 3: SEM Image Analysis FIG. 7 is a scanning electron microscope (SEM) image of a part of the cross-section of the multilayer capacitor according to Example 1, (b) an image obtained by mapping with Ni for the SEM image and performing SEM-EDS analysis, and (c) an image obtained by mapping with Ti for the (a) and performing SEM-EDS analysis.

[0152] FIG. 8 is a graph showing the results of line profile analysis of Al, C, and O elements according to the position changes of the internal electrodes and dielectric layers of the multilayer capacitor according to Example 1. FIG. 9 is a graph showing the results of line profile analysis of Ti and Ni elements according to the position changes of the internal electrodes and dielectric layers of the multilayer capacitor according to Example 1. In FIGS. 8 and 9, the line profile analysis is performed in the region shown in (a) of FIG. 7.

[0153] Referring to FIG. 7, in the multilayer capacitor according to Example 1, it was confirmed that an oxide metal layer containing Ni was formed between the internal electrode and the dielectric layer.

[0154] Referring to FIG. 8, in the multilayer capacitor according to Example 1, it was possible to confirm the Al and C elements contained in Ti3AlC2, which is a MAX phase compound, in the internal electrodes, and it was possible to confirm the O element contained in BaTiO3 in the dielectric layer.

[0155] Referring to FIG. 9, in the multilayer capacitor according to Example 1, it was possible to confirm that there is a layer containing Ni between the internal electrode and the dielectric layer.

[0156] As described above, the preferred embodiments of the present invention have been described. However, the present invention is not limited thereto, and various modifications can be made and implemented within the scope of the claims, the detailed description of the invention, and the accompanying drawings, and it is natural that these also belong to the scope of the present invention.

Explanation of Reference Numerals

[0157] 100: Multilayer capacitor 110: Capacitor body 111: Dielectric layer 112, 113: Cover region 121: First internal electrode 122: Second internal electrode 131: First external electrode 132: Second external electrode

Claims

1. A capacitor body including a dielectric layer, an internal electrode, and a metal oxide layer disposed between the dielectric layer and the internal electrode, and an external electrode disposed outside the capacitor body, wherein the internal electrode contains a compound represented by the following Chemical Formula 1: [Chemical Formula 1] M ｎ＋１ AX ｎ In Chemical Formula 1, M includes Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, or a combination thereof, A includes Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, Au, or a combination thereof, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

2. The compound represented by the chemical formula 1 contains Ti ２ AlC, V ２ AlC, Cr ２ AlC, Nb ２ AlC, Ta ２ AlC, Zr ２ AlC, Ti ２ AlN, Ti ３ AlC ２ , V ３ AlC ２ , Ta ３ AlC ２ , Zr ３ AlC ２ , Ti ４ AlN ３ , V ４ AlC ３ , Nb ４ AlC ３ , Ta ４ AlC ３ , (Mo, V) ４ AlC ３ , Mo ４ VAlC ４ , Ti ３ SiC ２ , Ti ４ SiC ３ , Ti ２ CdC, Sc ２ InC, Sc ２ SnC, Ti ２ GaC, Ti ２ InC, Ti ２ TlC, V ２ GaC, Cr ２ GaC, Ti ２ GaN, Ti ２ InN, V ２ GaN, Cr ２ GaN, Ti ２ GeC, Ti ２ SnC, Ti ２ PbC, V ２ GeC, Cr ２ GeC, V ２ PC, V ２ AsC, Ti ２ SC, Zr ２ InC, Zr ２ TlC, Nb ２ GaC, Nb ２ InC, Mo ２ GaC, Zr ２ InN, Zr ２ TlN, Zr ２ SnC, Zr ２ PbC, Nb ２ SnC, Nb ２ PC, Nb ２ AsC, Zr ２ SC, Nb ２ SC, Hf ２ InC, Hf ２ TlC, Ta ２ GaC, Hf ２ SnC, Hf ２ PbC, Hf ２ SnN, Hf ２ SC, Ti ２ ZnC, Ti ２ ZnN, V ２ ZnC, Nb ２ CuC, Mn ２ GaC, Mo ２ AuC, Ti ２ AuN, Ti ３ GaC ２ , Ti ３ InC ２ , Ti ３ GeC ２ , Ti ３ SnC ２ , Ti ３ ZnC ２ , Ti ４ GaC ３ , Ti ４ GeC ３ The multilayer capacitor according to claim 1, comprising GaC, or GeC, or a combination thereof, or Ti, or both.

3. The multilayer capacitor according to Claim 1, wherein the compound represented by Chemical Formula 1 contains a compound represented by the following Chemical Formula 1A: [Chemical Formula 1A] M ｎ＋１ A ｌ X ｎ In Chemical Formula 1A, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, A １ contains Al or Si, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

4. The compound represented by the chemical formula 1A is Ti ２ AlC, V ２ AlC, Cr ２ AlC, Nb ２ AlC, Ta ２ AlC, Zr ２ AlC, Ti ２ AlN, Ti ３ AlC ２ , V ３ AlC ２ , Ta ３ AlC ２ , Zr ３ AlC ２ , Ti ４ AlN ３ , V ４ AlC ３ , Nb ４ AlC ３ , Ta ４ AlC ３ , (Mo, V) ４ AlC ３ , Mo ４ VAlC ４ , Ti ３ SiC ２ , Ti ４ SiC ３ The multilayer capacitor according to claim 3, comprising or a combination thereof

5. The multilayer capacitor according to Claim 1, wherein the compound represented by Chemical Formula 1 contains a compound represented by the following Chemical Formula 1B: [Chemical Formula 1B] M ｎ＋１ AlC ｎ In Chemical Formula 1B, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, and n is an integer from 1 to 4.

6. The compound represented by the chemical formula 1B is Ti ２ AlC, V ２ AlC, Cr ２ AlC, Nb ２ AlC, Ta ２ AlC, Zr ２ The multilayer capacitor according to claim 5, comprising AlC, or a combination thereof.

7. The internal electrode further contains a conductive metal, wherein the conductive metal includes Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Co, Mn, Cr, Pt, Sn, W, Ti, Pb, an alloy thereof, or a combination thereof. The multilayer capacitor according to Claim 1.

8. The multilayer capacitor according to Claim 1, wherein the metal oxide layer includes Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Co oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide, Pb oxide, or a combination thereof.

9. The dielectric layer mainly contains a barium titanate-based compound, The barium titanate-based compound is Ba ｍ TiO ３ (0.995 ≤ m ≤ 1.010), (Ba １－x Ca ｘ ) ｍ (Ti １－ｙ Zr ｙ )O ３ (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba ｍ (Ti １－ｘ Zr ｘ )O ３ (0.995 ≤ m ≤ 1.010, x ≤ 0.10), (Ba １－x Ca ｘ ) ｍ (Ti １－ｙ Sn ｙ )O ３ (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), or a combination thereof, the multilayer capacitor according to claim 1.

10. A capacitor body including a dielectric layer, an internal electrode containing a conductive metal, and a metal oxide layer disposed between the dielectric layer and the internal electrode, an external electrode disposed outside the capacitor body, and a multilayer capacitor, wherein the internal electrode contains a compound represented by the following Chemical Formula 1: [Chemical Formula 1] M ｎ＋１ AX ｎ In Chemical Formula 1, M includes Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, or a combination thereof, A includes Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, Au, or a combination thereof, X includes C, N, or a combination thereof, n is an integer from 1 to 4.

11. The compound represented by the chemical formula 1 is Ti ２ AlC, V ２ AlC, Cr ２ AlC, Nb ２ AlC, Ta ２ AlC, Zr ２ AlC, Ti ２ AlN, Ti ３ AlC ２ , V ３ AlC ２ , Ta ３ AlC ２ , Zr ３ AlC ２ , Ti ４ AlN ３ , V ４ AlC ３ , Nb ４ AlC ３ , Ta ４ AlC ３ , (Mo, V) ４ AlC ３ , Mo ４ VAlC ４ , Ti ３ SiC ２ , Ti ４ SiC ３ , Ti ２ CdC, Sc ２ InC, Sc ２ SnC, Ti ２ GaC, Ti ２ InC, Ti ２ TlC, V ２ GaC, Cr ２ GaC, Ti ２ GaN, Ti ２ InN, V ２ GaN, Cr ２ GaN, Ti ２ GeC, Ti ２ SnC, Ti ２ PbC, V ２ GeC, Cr ２ GeC, V ２ PC, V ２ AsC, Ti ２ SC, Zr ２ InC, Zr ２ TlC, Nb ２ GaC, Nb ２ InC, Mo ２ GaC, Zr ２ InN, Zr ２ TiN, Zr ２ SnC, Zr ２ PbC, Nb ２ SnC, Nb ２ PC, Nb ２ AsC, Zr ２ SC, Nb ２ SC, Hf ２ InC, Hf ２ TlC, Ta ２ GaC, Hf ２ SnC, Hf ２ PbC, Hf ２ SnN, Hf ２ SC, Ti ２ ZnC, Ti ２ ZnN, V ２ ZnC, Nb ２ CuC, Mn ２ GaC, Mo ２ AuC, Ti ２ AuN, Ti ３ GaC ２ , Ti ３ InC ２ , Ti ３ GeC ２ , Ti ３ SnC ２ , Ti ３ ZnC ２ , Ti ４ GaC ３ , Ti ４ GeC ３ The multilayer capacitor according to claim 10, comprising GaC, GeC, or a combination thereof, or these combinations.

12. The multilayer capacitor according to claim 10, wherein the compound represented by Chemical Formula 1 includes a compound represented by the following Chemical Formula 1A: [Chemical Formula 1A] M ｎ＋１ A ｌ X ｎ In Chemical Formula 1A, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, A １ contains Al or Si, X includes C, N, or a combination thereof, n is an integer from 1 to 4.

13. The compound represented by the chemical formula 1A is Ti ２ AlC, V ２ AlC, Cr ２ AlC, Nb ２ AlC, Ta ２ AlC, Zr ２ AlC, Ti ２ AlN, Ti ３ AlC ２ , V ３ AlC ２ , Ta ３ AlC ２ , Zr ３ AlC ２ , Ti ４ AlN ３ , V ４ AlC ３ , Nb ４ AlC ３ , Ta ４ AlC ３ , (Mo, V) ４ AlC ３ , Mo ４ VAlC ４ , Ti ３ SiC ２ , Ti ４ SiC ３ The multilayer capacitor according to claim 12, comprising, or a combination thereof.

14. The multilayer capacitor according to claim 10, wherein the compound represented by Chemical Formula 1 includes a compound represented by the following Chemical Formula 1B: [Chemical Formula 1B] M ｎ＋１ AlC ｎ In Chemical Formula 1B, M includes Ti, Zr, Cr, V, Nb, Ta, Mo, Hf, Sc, Mn, or a combination thereof, n is an integer from 1 to 4.

15. The compound represented by the chemical formula 1B is Ti ２ AlC, V ２ AlC, Cr ２ AlC, Nb ２ AlC, Ta ２ AlC, Zr ２ The multilayer capacitor according to claim 14, comprising AlC, or a combination thereof.

16. The multilayer capacitor according to claim 10, wherein the conductive metal contained in the internal electrode includes Ni, Mg, Al, Zr, Bi, Ru, Ir, Cu, Co, Zn, Ag, Pd, Au, Co, Mn, Cr, Pt, Sn, W, Ti, Pb, an alloy thereof, or a combination thereof.

17. The multilayer capacitor according to claim 10, wherein the metal oxide layer includes a Ni oxide, Mg oxide, Al oxide, Zr oxide, Bi oxide, Ru oxide, Ir oxide, Cu oxide, Co oxide, Zn oxide, Ag oxide, Pd oxide, Au oxide, Co oxide, Mn oxide, Cr oxide, Pt oxide, Sn oxide, W oxide, Ti oxide, Pb oxide, or a combination thereof.

18. The dielectric layer mainly contains a barium titanate-based compound, The barium titanate-based compound is Ba ｍ TiO ３ where (0.995 ≤ m ≤ 1.010), (Ba １－x Ca ｘ )) ｍ (Ti １－ｙ Zr ｙ )O ３ (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba ｍ (Ti １－ｘ Zr ｘ )O ３ (0.995 ≤ m ≤ 1.010, x ≤ 0.10), (Ba １－x Ca ｘ )) ｍ (Ti １－ｙ Sn ｙ )O ３ (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), or a combination thereof, the multilayer capacitor according to claim 10.

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