Substrate processing apparatus and method for manufacturing metal oxide semiconductor

Abstract

The present invention relates to a substrate processing apparatus including a first source supply unit for supplying a first source gas, a second source supply unit for supplying a second source gas, a first supply line connecting the first source supply unit and an injection unit, a second supply line connecting the second source supply unit and the injection unit, a mixing unit installed on the first supply line so as to be disposed between the first supply unit and the injection unit, a first connection line connecting the second supply line to at least one of the first supply line and the mixing unit, and a first path changing unit installed at a first connection point where the first connection line is connected to the second supply line, wherein the first path changing unit changes a flow path of the second source gas so that the second source gas supplied from the second source supply unit is supplied to any one selected from the mixing unit and the injection unit.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus for performing processing steps such as a deposition step and an etching step on a substrate. [Background technology]

[0002] Generally, a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate in order to manufacture solar cells, semiconductor devices, flat panel displays, etc. To this end, substrate processing processes such as a deposition process for depositing a thin film of a specific material on the substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film from the selectively exposed portions to form a pattern are performed.

[0003] Such a substrate processing step is performed by a substrate processing apparatus, which performs the processing step on the substrate using gas supplied from a gas supply apparatus.

[0004] FIG. 1 is a schematic diagram of a substrate processing apparatus according to the prior art.

[0005] 1, a conventional substrate processing apparatus 10 includes an injection unit 11 that injects gas toward a substrate, a first supply unit 12 that supplies a first gas to the injection unit 11, and a second supply unit 13 that supplies a second gas to the injection unit 11. The first gas supplied by the first supply unit 12 and the second gas supplied by the second supply unit 13 are mixed in a mixing space disposed inside the injection unit 11 and then injected toward the substrate.

[0006] Here, the injection unit 11 must be provided with a gas flow path for the first gas and the second gas to flow, and therefore the mixing space is narrow in design. Therefore, in the conventional substrate processing apparatus 10, it is difficult to control the mixture composition ratio between the first gas and the second gas, and as a result, the deviation of the mixture composition ratio between the first gas and the second gas from the target value increases, resulting in a problem of deterioration in the quality of the thin film formed using the first gas and the second gas. Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention has been devised to solve the problems described above, and aims to provide a substrate processing apparatus capable of improving the film quality of a thin film formed using a first gas and a second gas.

[0008] The present invention provides a method for producing a metal oxide semiconductor capable of improving the step coverage of a gallium-containing oxide layer. [Means for solving the problem]

[0009] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0010] The substrate processing apparatus according to the present invention includes a chamber, and may include a substrate support disposed inside the chamber, an injector disposed above the substrate support, a first source supplying part for supplying a first source gas, a second source supplying part for supplying a second source gas, a first supply line connecting the first source supplying part and the injector, a second supply line connecting the second source supplying part and the injector, a mixer disposed in the first supply line to be disposed between the first supplying part and the injector, a first connection line connecting the second supply line to at least one of the first supply line and the mixer, and a first path changing part disposed at a first connection point where the first connection line is connected to the second supply line. The first path changing part may change a flow path of the second source gas such that the second source gas supplied from the second source supplying part is supplied to one selected from the mixer and the injector.

[0011] A method for manufacturing a metal oxide semiconductor according to the present invention forms an oxide layer on an exposed surface of a thin film, and includes the steps of: a) preparing a substrate having a patterned exposed surface of the thin film; b) forming a first channel layer on the exposed surface using at least one of indium oxide (InO), zinc oxide (ZnO), and tin oxide (SnO); and c) forming a second channel layer using gallium oxide (GaO). Effect of the Invention

[0012] According to the present invention, the following effects can be obtained.

[0013] The substrate processing apparatus according to the present invention is embodied to mix a plurality of source gases in a mixing space that is larger than the interior of the injection unit to generate a mixed gas. As a result, the substrate processing apparatus according to the present invention can improve the ease of controlling the mixture composition ratio of the plurality of source gases. Also, the substrate processing apparatus according to the present invention can reduce deviation of the mixture composition ratio of the plurality of source gases from a target value, thereby improving the quality of a thin film formed using the plurality of source gases.

[0014] The substrate processing apparatus according to the present invention is embodied to be capable of performing both a co-flow type process in which a mixed gas of a plurality of source gases is injected onto a substrate, and a nano lamination type process in which a plurality of source gases are injected onto a substrate in sequence. Therefore, the substrate processing apparatus according to the present invention can provide a user with process options, thereby contributing to ensuring a variety of process processes that the user can perform, as well as contributing to reducing the user's facility construction costs.

[0015] The substrate processing apparatus according to the present invention is embodied such that, when performing a processing process using a nanolaminate method in which a plurality of source gases are sequentially sprayed onto a substrate, a portion of the source gas is directly transferred to the spraying unit without passing through a mixing unit. Therefore, when performing a processing process using a nanolaminate method, the substrate processing apparatus according to the present invention can omit a purge process for purging the inside of the mixing unit using a purge gas, thereby shortening the time required for the processing process and improving the productivity of substrates subjected to the processing process.

[0016] The method for manufacturing a metal oxide semiconductor according to the present invention may be embodied by first forming a first channel layer using at least one of indium, zinc, and tin, which has a higher reactivity with hydroxyl groups (-OH) of a thin film compared to gallium, and therefore the method for manufacturing a metal oxide semiconductor according to the present invention may improve the film quality of an oxide layer by improving step coverage.

[0017] The method for manufacturing a metal oxide semiconductor according to the present invention may be embodied to form a first channel layer and a second channel layer independently of each other, and therefore, the method for manufacturing a metal oxide semiconductor according to the present invention may improve the accuracy and ease of adjusting the composition ratio between the precursor of the first channel layer and the precursor of the second channel layer. [Brief description of the drawings]

[0018] [Figure 1] FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to a conventional technique. [Diagram 2] 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Diagram 3] 4 is a schematic cross-sectional side view of an injection section that injects gas in the substrate processing apparatus according to the present invention; [Figure 4] 4 is a schematic cross-sectional side view of an injection section that injects gas in the substrate processing apparatus according to the present invention; [Diagram 5] 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Figure 6]1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Figure 7] 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Figure 8] 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Figure 9] FIG. 1 is a schematic cross-sectional side view showing an example of a metal oxide semiconductor. [Figure 10] 1 is a schematic flow chart of a method for manufacturing a metal oxide semiconductor according to the present invention. [Figure 11] 1 is a schematic flow chart of a method for manufacturing a metal oxide semiconductor according to the present invention. [Figure 12] 1 is a schematic flow chart of a method for manufacturing a metal oxide semiconductor according to the present invention. [Figure 13] 4 is a schematic flow chart of a method for manufacturing a metal oxide semiconductor according to a modified embodiment of the present invention. [Figure 14] 4 is a schematic flow chart of a method for manufacturing a metal oxide semiconductor according to a modified embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0020] 2, the substrate processing apparatus 1 according to the present invention performs a processing process on a substrate (S). The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention can perform a deposition process for depositing a thin film on the substrate (S), an etching process for removing a part of the thin film deposited on the substrate (S), and the like. Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present invention performs a deposition process will be described as an example, but it will be obvious to those skilled in the art to which the present invention pertains that embodiments in which the substrate processing apparatus 1 according to the present invention performs a different processing process, such as an etching process, can be derived from this.

[0021] The substrate processing apparatus 1 according to the present invention may include a chamber 2 , a substrate support 3 , and an injection unit 4 .

[0022] Referring to FIG. 2, the chamber 2 provides a processing space 100. In the processing space 100, processing processes such as deposition processes and etching processes can be performed on a substrate (S). The processing space 100 can be disposed inside the chamber 2. The chamber 2 can be coupled with an exhaust port (not shown) for exhausting gas from the processing space 100. A substrate support unit 3 and an injection unit 4 can be disposed inside the chamber 2.

[0023] Referring to FIG. 2, the substrate support 3 supports a substrate (S). The substrate support 3 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported on the substrate support 3, processing steps can be performed on the multiple substrates (S) at one time. The substrate support 3 can be coupled to the chamber 2. The substrate support 3 can be disposed inside the chamber 2.

[0024] 2 to 4, the injection unit 4 injects gas toward the substrate support 3. The injection unit 4 may be disposed inside the chamber 2. The injection unit 4 may be disposed facing the substrate support 3. The injection unit 4 may be disposed above the substrate support 3 based on the vertical direction. The vertical direction is an axial direction parallel to the direction in which the injection unit 4 and the substrate support 3 are spaced apart from each other. A processing space 100 may be disposed between the injection unit 4 and the substrate support 3. The injection unit 4 may be coupled to a lid (not shown). The lid may be coupled to the chamber 2 so as to cover an upper portion of the chamber 2. The injection unit 4 may be connected to a gas supply unit 40. In this case, the injection unit 4 may inject gas supplied from the gas supply unit 40 toward the substrate support 3.

[0025] The ejection portion 4 may include a first gas flow passage 4a and a second gas flow passage 4b.

[0026] The first gas flow path 4a is for injecting gas. The first gas flow path 4a can be connected to the processing space 100. Therefore, the gas flows along the first gas flow path 4a and then is injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a can function as a flow path for the gas to flow and also as an injection port for injecting the gas into the processing space 100. One side of the first gas flow path 4a can be connected to the gas supply unit 40 through a pipe, a hose, a gas block, etc. The other side of the first gas flow path 4a can be connected to the processing space 100. Thereby, the gas supplied from the gas supply unit 40 can flow along the first gas flow path 4a and then be injected into the processing space 100 through the first gas flow path 4a.

[0027] The second gas passage 4b ​​is for injecting gas. The gas injected through the second gas passage 4b ​​and the gas injected through the first gas passage 4a may be different gases. For example, the gas injected through the second gas passage 4b ​​and the gas injected through the first gas passage 4a may be different source gases. For example, the gas injected through the second gas passage 4b ​​may be a reactant gas, and the gas injected through the first gas passage 4a may be a source gas. The second gas passage 4b ​​may be connected to the processing space 100. Therefore, the gas may flow along the second gas passage 4b ​​and then be injected into the processing space 100 through the second gas passage 4b. The second gas passage 4b ​​may function as a passage for the gas to flow and also as an injection port for injecting the gas into the processing space 100. One side of the second gas passage 4b ​​may be connected to the gas supply unit 40 via a pipe, a hose, a gas block, or the like. The other side of the second gas flow passage 4b ​​can be connected to the processing space 100. This allows the gas supplied from the gas supply unit 40 to flow along the second gas flow passage 4b ​​and then be injected into the processing space 100 via the second gas flow passage 4b.

[0028] The second gas flow passage 4b ​​and the first gas flow passage 4a may be arranged to be spatially separated from each other. Therefore, the injection unit 4 may be embodied such that the gas flowing along the second gas flow passage 4b ​​and the gas flowing along the first gas flow passage 4a do not mix with each other before being injected into the processing space 100. The second gas flow passage 4b ​​and the first gas flow passage 4a may inject gas toward different portions of the processing space 100.

[0029] As shown in FIG. 3, the ejection portion 4 can include a first plate 41 and a second plate 42 .

[0030] The first plate 41 is disposed above the second plate 42. The first plate 41 and the second plate 42 may be disposed apart from each other. A plurality of first gas holes 411 may be formed in the first plate 41. The first gas holes 411 may function as passages for gas flow. The first gas holes 411 may belong to the first gas flow passage 4a. A plurality of second gas holes 412 may be formed in the first plate 41. The second gas holes 412 may function as passages for gas flow. The second gas holes 412 may belong to the second gas flow passage 4b. A plurality of protruding members 413 may be coupled to the first plate 41. The protruding members 413 may protrude from the lower surface of the first plate 41 toward the second plate 42. Each of the first gas holes 411 may be formed by penetrating the first plate 41 and the protruding members 413.

[0031] A plurality of openings 421 may be formed in the second plate 42. The openings 421 may be formed penetrating the second plate 42. The openings 421 may be disposed at positions corresponding to the respective protruding members 413. Thus, as shown in FIG. 3, the protruding members 413 may be formed to a length disposed so as to be inserted into the respective openings 421. Although not shown in the figure, the protruding members 413 may also be formed to a length disposed so as to be disposed above the respective openings 421. The protruding members 413 may also be formed to a length protruding to the lower side of the second plate 42. The second gas holes 412 may be disposed so as to inject gas toward the upper surface of the second plate 42. Although not shown in the figure, the second plate 42 may not include the protruding members 413. In this case, the lower surface of the second plate 42 facing the first plate 41 may be formed flat.

[0032] The ejection unit 4 can generate plasma using the second plate 42 and the first plate 41. In this case, a plasma power source such as RF power can be applied to the first plate 41, and the second plate 42 can be grounded. It is also possible to ground the first plate 41 and apply a plasma power source to the second plate 42.

[0033] As shown in FIG. 4, the second plate 42 may have a plurality of first openings 422 and a plurality of second openings 423 formed therein.

[0034] The first openings 422 may be formed through the second plate 42. The first openings 422 may be connected to the first gas holes 411, respectively. In this case, the protruding members 413 may be disposed to contact the upper surface of the second plate 42. The gas may be injected into the processing space 100 through the first gas holes 411 and the first openings 422. The first gas holes 411 and the first openings 422 may be included in the first gas flow path 4a.

[0035] The second opening 423 may be formed through the second plate 42. The second opening 423 may be connected to a buffer space 43 disposed between the first plate 41 and the second plate 42. Gas may be injected into the processing space 100 through the second gas hole 412, the buffer space 43, and the second opening 423. The second gas hole 412, the buffer space 43, and the second opening 423 may be included in a second gas flow path 4b.

[0036] Referring to FIG. 5, the substrate processing apparatus 1 according to the present invention may further include a source supply unit 5.

[0037] The source supply unit 5 is for supplying a source gas. The source supply unit 5 may belong to the gas supply unit 40. The source supply unit 5 may supply a source gas to the spray unit 4. In this case, the spray unit 4 may spray the source gas supplied from the source supply unit 5 toward the substrate support unit 3. The source supply unit 5 may include a storage tank (not shown) for storing the source gas, a flow rate control valve (not shown) for controlling the supply amount of the source gas discharged from the storage tank and supplied to the spray unit 4, and the like.

[0038] The source supply unit 5 can include a first source supply unit 51 and a second source supply unit 52 .

[0039] The first source supply unit 51 is for supplying a first source gas. The first source supply unit 51 may be connected to the injector 4 via a first supply line 511. When the injector 4 includes a first gas passage 4a and a second gas passage 4b, the first supply line 511 may be connected to the first source supply unit 51 and the first gas passage 4a, respectively. The first supply line 511 may be embodied as a hose, a pipe, a tube, etc. The first supply line 511 may also be embodied as a hole formed in a predetermined structure.

[0040] The second source supply unit 52 is for supplying a second source gas. The second source supply unit 52 may be connected to the injection unit 4 via a second supply line 521. When the injection unit 4 includes a first gas passage 4a and a second gas passage 4b, the second supply line 521 may be connected to the second source supply unit 52 and the second gas passage 4b, respectively. The second supply line 521 may be embodied as a hose, a pipe, a tube, or the like. The second supply line 521 may also be embodied as a hole formed in a predetermined structure. The second source gas and the first source gas may each include at least one of indium, gallium, zinc, and oxygen. The second source gas and the first source gas may be different gases from each other.

[0041] Referring to FIG. 5, the substrate processing apparatus 1 according to the present invention may further include a mixing section 6.

[0042] The mixer 6 is installed in the first supply line 511. The mixer 6 can be disposed between the first source supply unit 51 and the injection unit 4. The mixer 6 can mix a plurality of source gases to generate a mixed gas. When the substrate processing apparatus 1 according to the present invention performs a processing process using a co-flow method in which a mixed gas containing a plurality of source gases is injected, the mixer 6 can mix the first source gas supplied from the first source supply unit 51 and the second source gas supplied from the second source supply unit 52 to generate a mixed gas, and then transfer the mixed gas to the front injection unit 4 through the first supply line 511. In this case, the mixed gas is supplied from the mixer 6 to the first gas flow path 4a through the first supply line 511, and can be injected to the substrate (S) through the first gas flow path 4a. Meanwhile, the second source gas is not supplied to the second gas flow path 4b.

[0043] In this manner, the substrate processing apparatus 1 according to the present invention is embodied to mix a plurality of source gases to generate a mixed gas through the mixer 6 provided separately from the injection unit 4. As a result, in comparison with the comparative example in which a mixture gas is generated by mixing a plurality of source gases in the injection unit 4, the substrate processing apparatus 1 according to the present invention can mix a plurality of source gases to generate a mixed gas in the mixer 6 which is wider than the injection unit 4. Therefore, the substrate processing apparatus 1 according to the present invention can improve the ease of the operation of controlling the mixture composition ratio of the plurality of source gases. In addition, the substrate processing apparatus 1 according to the present invention can improve the film quality of a thin film formed using the plurality of source gases since it can reduce the deviation of the mixture composition ratio of the plurality of source gases.

[0044] The mixing unit 6 may be disposed outside the chamber 2. The mixing unit 6 may be disposed apart from the lid of the chamber 2. The mixing unit 6 may be coupled to the lid of the chamber 2. The mixing unit 6 may be embodied as a tank having a mixing space therein.

[0045] 5 to 7, the substrate processing apparatus 1 according to the present invention may further include a first path changing section .

[0046] The first path changing unit 7 changes the flow path of the second source gas. The first path changing unit 7 can change the flow path of the second source gas so that the second source gas supplied from the second source supply unit 52 is supplied to one selected from the mixer 6 and the sprayer 4.

[0047] When the first path changing unit 7 changes the flow path of the second source gas so that the second source gas is supplied to the mixing unit 6, the second source gas can be supplied to the injection unit 4 via the mixing unit 6. This allows the injection unit 4 to inject a mixed gas of the first source gas and the second source gas onto the substrate (S). In this case, the substrate processing apparatus 1 according to the present invention can deposit a thin film layer formed of the mixed gas onto the substrate (S) by performing a processing process using a coflow method.

[0048] When the first path changing unit 7 changes the flow path of the second source gas so that the second source gas is supplied to the injection unit 4, the second source gas can be supplied to the injection unit 4 without passing through the mixer 6. As a result, the injection unit 4 can inject the first source gas and the second source gas onto the substrate S separately without mixing them. In this case, the substrate processing apparatus 1 according to the present invention can sequentially deposit a thin film layer formed from the first source gas and a thin film layer formed from the second source gas on the substrate S by performing a processing process using a nano lamination method.

[0049] In this way, the substrate processing apparatus 1 according to the present invention is embodied to be capable of performing both the co-flow process and the nanolamination process using the first path changing unit 7. Therefore, the substrate processing apparatus 1 according to the present invention can provide the user with options for the process, which not only contributes to ensuring the variety of process steps that the user can execute, but also contributes to reducing the user's facility construction costs. In this case, the selection of whether to supply the second source gas to the mixing unit 6 or the injection unit 4 may be made by the operator. The selection of whether to supply the second source gas to the mixing unit 6 or the injection unit 4 may be made according to a preset process sequence.

[0050] Furthermore, when performing a processing process using the nanolaminate method, the substrate processing apparatus 1 according to the present invention is embodied such that the second source gas is transferred to the injection unit 4 without passing through the mixing unit 6, so that the second source gas is not supplied to the mixing unit 6. Therefore, when performing a processing process using the nanolaminate method, the substrate processing apparatus 1 according to the present invention can omit a purge process for purging the inside of the mixing unit 6 using a purge gas, thereby shortening the time required for the processing process and increasing the productivity of the substrates (S) that have been processed. This can be specifically described as follows.

[0051] First, in the comparative example in which both the first and second source gases pass through the mixing unit 6 when performing the processing process using the nanolamination method, when the first source gas passes through the mixing unit 6 and is transferred to the injection unit 4, the first source gas remains inside the mixing unit 6. Therefore, in the comparative example, in order to prevent the first and second source gases from mixing with each other, a purge process must be performed on the mixing unit 6 before the second source gas is supplied to the mixing unit 6. Therefore, in the comparative example, the time required for performing the processing process using the first and second source gases is delayed by the time required for the purge process on the mixing unit 6.

[0052] In contrast, in the substrate processing apparatus 1 according to the present invention, when performing a processing process using the nanolamination method, the second source gas is transferred to the injection unit 4 without passing through the mixer 6, so that a purge process for the mixer 6 is not required. Therefore, compared to the comparative example, the substrate processing apparatus 1 according to the present invention can reduce the time required for the processing process by the time required for the purge process for the mixer 6. In addition, the substrate processing apparatus 1 according to the present invention can contribute to reducing construction costs and process costs because it is possible to omit equipment for performing a purge process for the mixer 6.

[0053] The first path changing unit 7 can be installed at a first connection point 71a where the first connection line 71 is connected to the second supply line 521. The first connection line 71 connects the second supply line 521 to at least one of the first supply line 511 and the mixer 6.

[0054] 6, one side of the first connection line 71 may be connected to the second supply line 521 at a first connection point 71a, and the other side of the first connection line 71 may be connected to the first supply line 511 between the first source supply unit 51 and the mixer 6. In this case, when the processing process is performed using the coflow method, the second source gas may flow along the second supply line 521, the first connection line 71, and the first supply line 511 by changing the flow path by the first path change unit 7, and may be supplied to the mixer 6.

[0055] 7, one side of the first connection line 71 is connected to the second supply line 521 at a first connection point 71a, and the other side of the first connection line 71 may be directly connected to the mixer 6. In this case, when a processing process is performed using the co-flow method, the second source gas flows along the second supply line 521 and the first connection line 71 by changing the flow path by the first path changing unit 7, and can be directly supplied to the mixer 6.

[0056] Although not shown in the figure, one side of the first connecting line 71 may be connected to the second supply line 521 at a first connecting point 71a, and the other side of the first connecting line 71 may be branched and connected to both the first supply line 511 and the mixer 6. The first connecting line 71 may be embodied as a hose, a pipe, a tube, etc. The first connecting line 71 may also be embodied as a hole formed in a predetermined structure.

[0057] The first path change section 7 can include a first connecting valve 72 and a first supply valve 73 .

[0058] The first connecting valve 72 selectively opens and closes the first connecting line 71. The first connecting valve 72 can be installed in the first connecting line 71 between one side of the first connecting line 71 and the other side of the first connecting line 71.

[0059] The first supply valve 73 selectively opens and closes the second supply line 521. The first supply valve 73 may be installed in the second supply line 521 between the first connection point 71a and the injection unit 4.

[0060] The first path changing unit 7 can change the flow path of the second source gas by using the first connection valve 72 and the first supply valve 73.

[0061] For example, when the injector 4 injects a mixed gas of a plurality of source gases onto the substrate (S) to perform a processing process, the first path changing unit 7 can control the first supply valve 73 to close the second supply line 521 and control the first connecting valve 72 to open the first connecting line 71. In this way, the first path changing unit 7 can change the flow path of the second source gas so that the second source gas is supplied to the mixer 6.

[0062] For example, when the injector 4 injects a plurality of source gases onto the substrate (S) in sequence to perform a processing process, the first path changer 7 can control the first connection valve 72 to close the first connection line 71 and control the first supply valve 73 to open the second supply line 521. As a result, the first path changer 7 can change the flow path of the second source gas so that the second source gas is supplied to the injector 4. In this case, the first path changer 7 can control the first connection valve 72 to keep the first connection line 71 closed, and control the first supply valve 73 to open and close the second supply line 521 according to the process sequence of the processing process. For example, the first path changer 7 can control the first supply valve 73 so that the second supply line 521 is opened only in a section where the second source gas is injected onto the substrate (S) in the process sequence. In the process sequence, in the remaining sections except for the section in which the second source gas is injected onto the substrate (S), the first path changing unit 7 can control the first supply valve 73 to close the second supply line 521.

[0063] Here, a first mixing valve 61 and a second mixing valve 62 can be installed on the first supply line 511 .

[0064] The first mixing valve 61 is disposed between the first source supply unit 51 and the mixing unit 6. That is, the first mixing valve 61 can be disposed on the inlet side of the mixing unit 6. The first mixing valve 61 can change whether or not the first source gas is supplied to the mixing unit 6 by opening and closing the first supply line 511 on the inlet side of the mixing unit 6.

[0065] The second mixing valve 62 is disposed between the mixing section 6 and the spray section 4. That is, the second mixing valve 62 can be disposed on the outlet side of the mixing section 6. The second mixing valve 62 can change whether or not the first source gas or a mixed gas of the first source gas and the second source gas is supplied to the spray section 4 by opening and closing the first supply line 511 on the outlet side of the mixing section 6.

[0066] When the substrate processing apparatus 1 according to the present invention performs a processing step in a co-flow system, the first mixing valve 61 and the second mixing valve 62 can operate as follows.

[0067] First, until the supply of the first source gas and the second source gas to the mixing section 6 is completed, the first mixing valve 61 opens the first supply line 511, and the second mixing valve 62 closes the first supply line 511. In this case, the first supply valve 73 closes the second supply line 521, and the first connecting valve 72 opens the first connecting line 71. This allows the first source gas and the second source gas to be supplied to the mixing section 6.

[0068] Next, when the supply of the first source gas and the second source gas to the mixer 6 is completed, the first mixing valve 61 closes the first supply line 511, and the first connection valve 72 closes the first connection line 71. In this case, the second mixing valve 62 maintains the first supply line 511 in a closed state, and the first supply valve 73 maintains the second supply line 521 in a closed state. In this state, a process can be performed in which the first source gas and the second source gas are mixed together inside the mixer 6 to become a mixed gas.

[0069] Next, when the first source gas and the second source gas are mixed to form a mixed gas, the second mixing valve 62 opens the first supply line 511. In this case, the first mixing valve 61 maintains the first supply line 511 in a closed state, the first connection valve 72 maintains the first connection line 71 in a closed state, and the first supply valve 73 maintains the second supply line 521 in a closed state. As a result, the mixed gas can flow along the first supply line 511 and be supplied to the injection unit 4.

[0070] In this way, the substrate processing apparatus 1 according to the present invention can improve the mixing ratio of the plurality of source gases by using the first mixing valve 61 and the second mixing valve 62. As a result, the substrate processing apparatus 1 according to the present invention can further improve the ease of the operation of controlling the mixture composition ratio of the plurality of source gases, and can further reduce the deviation of the mixture composition ratio of the plurality of source gases from the target value, thereby further improving the film quality of the thin film formed by using the plurality of source gases. In addition, the substrate processing apparatus 1 according to the present invention can increase the pressure of the mixed gas in the mixing unit 6 by using the first mixing valve 61 and the second mixing valve 62. Therefore, the substrate processing apparatus 1 according to the present invention can inject the mixed gas toward the substrate (S) through the injection unit 4 with a stronger injection pressure, thereby further improving the quality of the substrate after the processing process.

[0071] Here, the substrate processing apparatus 1 according to the present invention can operate to perform only the process by the coflow method or only the process by the nanolaminate method according to the user's selection. Meanwhile, the substrate processing apparatus 1 according to the present invention can also operate to perform the process by the coflow method and the process by the nanolaminate method in sequence according to the user's selection. In this case, the injection unit 4 can inject a mixed gas of a plurality of source gases onto the substrate (S) to perform the first process, and then inject the plurality of source gases onto the substrate (S) in sequence to perform the second process. That is, the injection unit 4 can inject the mixed gas, the first source gas, and the second source gas onto the substrate (S) in sequence. When both the first process and the second process are performed in this manner, the substrate processing apparatus 1 according to the present invention can further include an inter-purge unit 63.

[0072] The inter-purge unit 63 is connected to the mixing unit 6. After the first process is performed, a purge gas for purging the inside of the mixing unit 6 can be supplied to the mixing unit 6 before supplying only the first source gas to the mixing unit 6 to perform the second process. Thus, the inter-purge unit 63 can remove the mixed gas remaining in the mixing unit 6 from the mixing unit 6. Then, the first source gas can be supplied to the mixing unit 6. Thus, the substrate processing apparatus 1 according to the present invention can prevent the mixed gas from being mixed with the first source gas and injected when performing the second process after performing the first process. Therefore, the substrate processing apparatus 1 according to the present invention can be realized to improve the quality of the thin film formed on the substrate (S) even when the process according to the coflow method and the process according to the nanolaminate method are performed in sequence.

[0073] 5 to 7, a substrate processing apparatus 1 according to the present invention can include a reactant supply unit 8. In the embodiment shown in FIG.

[0074] The reactant supply unit 8 is for supplying a reactant gas to the spray unit 4. The reactant supply unit 8 may belong to the gas supply unit 40. The reactant supply unit 8 may supply a reactant gas capable of reacting with at least one of the source gases supplied by the source supply unit 5. The spray unit 4 may spray the reactant gas supplied from the reactant supply unit 8 toward the substrate support unit 3. The reactant supply unit 8 may include a storage tank (not shown) for storing the reactant gas, a flow control valve (not shown) for controlling the supply amount of the reactant gas discharged from the storage tank and supplied to the spray unit 4, and the like. The reactant supply unit 8 may be connected to at least one of the first gas flow path 4a and the second gas flow path 4b. The reactant supply unit 8 may also be connected to a third gas flow path (not shown) of the spray unit 4. The reactant supply unit 8 may be connected to the spray unit 4 via a supply line 81. The supply line 81 may be embodied as a hose, a pipe, a tube, or the like. The supply line 81 may be realized as a hole formed in a given structure.

[0075] Although not shown in the figure, the substrate processing apparatus 1 according to the present invention may also include a purge supply unit. The purge supply unit is for supplying a purge gas to the injection unit 4. The purge supply unit may be included in the gas supply unit 40. The injection unit 4 may inject the purge gas supplied from the purge supply unit toward the substrate support unit 3. The purge supply unit may be connected to at least one of the first gas flow path 4a and the second gas flow path 4b. The purge supply unit may also be connected to a purge gas flow path (not shown) of the injection unit 4. The purge supply unit may be connected to at least one of the first supply line 511 and the second supply line 521. The purge supply unit may also be connected to the injection unit 4 via a separate supply line.

[0076] 5 to 8, the substrate processing apparatus 1 according to the present invention may be embodied to perform a processing process using three or more source gases. For example, when the substrate processing apparatus 1 according to the present invention performs a processing process using three source gases, the source supply unit 5 may further include a third source supply unit 53 (shown in FIG. 8).

[0077] The third source supply unit 53 is for supplying a third source gas. The third source supply unit 53 may be connected to the injector 4 via a third supply line 531. In this case, the injector 4 may include a third gas passage (not shown) for injecting the third source gas. The third source supply unit 53 may be connected to at least one of the first gas passage 4a and the second gas passage 4b ​​via the third supply line 531. The third supply line 531 may be embodied as a hose, a pipe, a tube, or the like. The third supply line 531 may be embodied as a hole formed in a predetermined structure.

[0078] Meanwhile, the substrate processing apparatus 1 according to the present invention may further include a second path changing unit 9 (shown in FIG. 8).

[0079] The second path changing unit 9 changes the flow path of the third source gas. The second path changing unit 9 can change the flow path of the third source gas so that the third source gas supplied from the third source supply unit 53 is supplied to one selected from the mixer 6 and the sprayer 4.

[0080] When the second path changing unit 9 changes the flow path of the third source gas so that the third source gas is supplied to the mixer 6, the third source gas can be supplied to the spraying unit 4 via the mixer 6. As a result, the spraying unit 4 can spray a mixed gas in which at least one of the first source gas and the second source gas is further mixed with the third source gas onto the substrate (S). In this case, the substrate processing apparatus 1 according to the present invention can deposit a thin film layer formed of the mixed gas on the substrate (S) by performing a processing process using a coflow method.

[0081] When the second path changing unit 9 changes the flow path of the third source gas so that the third source gas is supplied to the injection unit 4, the third source gas can be supplied to the injection unit 4 without passing through the mixer 6. As a result, the injection unit 4 can inject the first source gas, the second source gas, and the third source gas individually onto the substrate (S) without being mixed with each other. In this case, the substrate processing apparatus 1 according to the present invention can sequentially deposit a thin film layer formed with the first source gas, a thin film layer formed with the second source gas, and a thin film layer formed with the third source gas on the substrate (S) by performing a processing process using a nanolamination method.

[0082] The second path changing section 9 can be installed at a second connection point 91a where the second connection line 91 is connected to the third supply line 531. The second connection line 91 connects the third supply line 531 to at least one of the first supply line 511 and the mixer 6.

[0083] 8, one side of the second connection line 91 may be connected to the third supply line 531 at a second connection point 91a, and the other side of the second connection line 91 may be connected to the first supply line 511 between the first source supply unit 51 and the mixer 6. In this case, when the processing process is performed using the coflow method, the third source gas may flow along the third supply line 531, the second connection line 91, and the first supply line 511 by changing the flow path by the second path changing unit 9, and be supplied to the mixer 6.

[0084] Although not shown in the figure, one side of the second connection line 91 may be connected to the third supply line 531 at a second connection point 91a, and the other side of the second connection line 91 may be directly connected to the mixer 6. In this case, when a processing process is performed using the co-flow method, the third source gas may flow along the third supply line 531 and the second connection line 91 by changing the flow path by the second path changing unit 9, and may be directly supplied to the mixer 6.

[0085] Although not shown in the figure, one side of the second connecting line 91 may be connected to the third supply line 531 at a second connecting point 91a, and the other side of the second connecting line 91 may be branched and connected to both the first supply line 511 and the mixer 6. The second connecting line 91 may be embodied as a hose, a pipe, a tube, etc. The second connecting line 91 may also be embodied as a hole formed in a predetermined structure.

[0086] Although not shown in the drawings, the second path changing unit 9 may include a second connection valve that selectively opens and closes the second connection line 91, and a second supply valve that selectively opens and closes the third supply line 531. The second connection valve and the second supply valve are different from the above-described first connection valve 72 and first supply valve 73, respectively, only in their arrangements, and therefore detailed description thereof will be omitted.

[0087] On the other hand, when the substrate processing apparatus 1 according to the present invention performs a processing process using N source gases (N is an integer greater than 3), the substrate processing apparatus 1 according to the present invention may be embodied including N source supply units, N supply lines, N path change units, and N connecting lines.

[0088] Hereinafter, embodiments of the method for manufacturing a metal oxide semiconductor according to the present invention will be described in detail with reference to the accompanying drawings. In the description of the embodiments of the present invention, when it is described that a certain structure is formed on another structure, such description should be interpreted as including the case where the structures are in contact with each other, as well as the case where a third structure is interposed between the structures.

[0089] 2 to 9, the method for manufacturing a metal oxide semiconductor according to the present invention is for manufacturing a metal oxide semiconductor 200 on a substrate (S) by forming an oxide layer 230. The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, etc. The method for manufacturing a metal oxide semiconductor according to the present invention may be performed by the substrate processing apparatus 1 according to the present invention described above.

[0090] 2 to 10, the method for manufacturing a metal oxide semiconductor according to the present invention can manufacture a metal oxide semiconductor 200 including a thin film 210 formed on a substrate (S) and an oxide layer 230 formed on an exposed surface 211 of the thin film 210, as shown in FIG. 9. The exposed surface 211 is a surface of the thin film 210 that is exposed by patterning the thin film 210. In FIG. 9, the exposed surface 211 is shown to correspond to a side surface of the thin film 210, but is not limited thereto, and the exposed surface 211 can correspond to another surface of the thin film 210. The exposed surface 211 can also be exposed by a through hole 220 formed in the thin film 210. When the metal oxide semiconductor 200 is a three-dimensional transistor, the thin film 210 can be a gate insulating film. In this case, the exposed surface 211 can correspond to a side surface of the gate insulating film. A thin film layer 240 can be disposed on both sides of the thin film 210. When the metal oxide semiconductor 200 is a three-dimensional transistor, the thin film layer 240 may be embodied as a structure in which a plurality of oxide films and a plurality of word lines (WL) are alternately stacked. The thin film layer 240 may be formed on a substrate (S), and a pattern hole may be formed in the thin film layer 240 through an etching process, and then the thin film 210 may be formed on the side of the thin film layer 240 exposed by the pattern hole. The oxide layer 230 may be embodied as an IGZO oxide layer containing indium (In), gallium (Ga), zinc (Zn), and oxygen (O). The oxide layer 230 may also be embodied as an ITGO oxide layer containing indium (In), tin (Sn), gallium (Ga), and oxygen (O).

[0091] The method for producing a metal oxide semiconductor according to the present invention may include a) step (S10), b) step (S20), and c) step (S30).

[0092] Step a) (S10) may be performed by preparing a substrate (S) having a patterned exposed surface 211 of a thin film 210. Step a) (S10) may also be performed by loading the substrate (S) having a patterned exposed surface 211 onto a substrate support 3. The substrate (S) may be loaded onto the substrate support 3 with thin film layers 240 disposed on both sides of the thin film 210 and with through holes 220 formed in the thin film 210. In this case, the exposed surface 211 may correspond to the side surface of the thin film 210.

[0093] The step b) (S20) can be performed by forming the first channel layer 231 on the exposed surface 211 using at least one of indium oxide (InO), zinc oxide (ZnO), and tin oxide (SnO). The step b) (S20) can be performed by the injection unit 4 sequentially injecting a source gas containing at least one of indium, zinc, and tin and a reactant gas containing oxygen. Thereby, the first channel layer 231 can be formed on the exposed surface 211 through atomic layer deposition (ALD). The source gas containing at least one of indium, zinc, and tin can be injected through the first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The reactant gas containing oxygen can be injected through the second gas flow path 4b. In this case, the second gas flow path 4b can be connected to the reactant supply unit 8. The reactant gas containing oxygen can also be injected through the third gas flow path. In this case, the third gas flow passage can be connected to a reactant supply section 8.

[0094] The step c) (S30) may be performed by forming the second channel layer 232 using gallium oxide (GaO). The step c) (S30) may be performed by the injection unit 4 sequentially injecting a source gas containing gallium and a reactant gas containing oxygen. Thereby, the second channel layer 232 may be formed on the first channel layer 231 through atomic layer deposition. The source gas containing gallium may be injected through the first gas flow path 4a. In this case, the first gas flow path 4a may be connected to the source supply unit 5. The reactant gas containing oxygen may be injected through the second gas flow path 4b. In this case, the second gas flow path 4b may be connected to the reactant supply unit 8. The reactant gas containing oxygen may also be injected through the third gas flow path. In this case, the third gas flow path may be connected to the reactant supply unit 8.

[0095] In this manner, the method for manufacturing a metal oxide semiconductor according to the present invention may be embodied by first forming the first channel layer 231 on the exposed surface 211 using at least one of indium, zinc, and tin, and then forming the second channel layer 232 using gallium. As a result, the method for manufacturing a metal oxide semiconductor according to the present invention can achieve the following effects.

[0096] First, the method for manufacturing a metal oxide semiconductor according to the present invention forms the first channel layer 231 first using at least one of indium, zinc, and tin, which has a higher reactivity with the hydroxyl group (-OH) of the thin film 210 compared to gallium, and therefore can prevent the step coverage from being reduced due to a high activation barrier that hinders an initial self-limiting chemisorption process between gallium and the hydroxyl group (-OH) of the thin film 210. In this case, the method for manufacturing a metal oxide semiconductor according to the present invention can reduce the activation barrier between the thin film 210 and the first channel layer 231, and therefore can facilitate the surface nucleation growth of the precursor of the first channel layer 231. Therefore, the method for manufacturing a metal oxide semiconductor according to the present invention can improve not only the step coverage of the first channel layer 231 formed on the exposed surface 211, but also the step coverage of the second channel layer 232 formed on the first channel layer 231, and therefore can improve the film quality of the oxide layer 230.

[0097] Secondly, the method for manufacturing a metal oxide semiconductor according to the present invention can improve the accuracy and easiness of adjusting the composition ratio between the precursor of the first channel layer 231 and the precursor of the second channel layer 232 by forming the first channel layer 231 and the second channel layer 232 independently. Therefore, the method for manufacturing a metal oxide semiconductor according to the present invention can improve the adaptability to changes in the type and specifications of the metal oxide semiconductor 200, and can improve the versatility of being applicable to forming the oxide layer 230 of various metal oxide semiconductors 200. In addition, since the surface reactivity can be improved by adjusting the composition ratio between the precursor of the first channel layer 231 and the precursor of the second channel layer 232, the method for manufacturing a metal oxide semiconductor according to the present invention can further improve the step coverage of the oxide layer 230.

[0098] Thirdly, the method for manufacturing a metal oxide semiconductor according to the present invention may be embodied such that the second channel layer 232 including gallium oxide is formed after the first channel layer 231 including indium oxide is formed. Since the indium of the first channel layer 231 can contribute to improving the deposition uniformity of gallium of the second channel layer 232, the method for manufacturing a metal oxide semiconductor according to the present invention can further improve the step coverage of the second channel layer 232, thereby further improving the film quality of the oxide layer 230. Therefore, the method for manufacturing a metal oxide semiconductor according to the present invention can manufacture a metal oxide semiconductor 200 in which excellent electrical and chemical properties of the oxide layer 230 per unit cell are guaranteed in a high aspect ratio ultra-fine pattern device.

[0099] Meanwhile, the oxide layer 230 may be realized as an IGZO oxide layer or an ITGO oxide layer by mixing or reacting the material constituting the first channel layer 231 with the material constituting the second channel layer 232. When the oxide layer 230 is realized as an IGZO oxide layer, the b) step (S20) may form the first channel layer 231 using indium oxide and zinc oxide. When the oxide layer 230 is realized as an ITGO oxide layer, the b) step (S20) may form the first channel layer 231 using indium oxide and tin oxide.

[0100] On the other hand, when the metal oxide semiconductor 200 is a three-dimensional transistor, step b) (S20) can be performed by forming a first channel layer 231 on a side of the gate insulating film, and step c) (S30) can be performed by forming a second channel layer 232 on a side of the first channel layer 231.

[0101] 2 to 10, the method for manufacturing a metal oxide semiconductor according to the present invention may include a step of repeatedly performing step b) (S20) and then repeatedly performing step c) (S30). In this case, by repeatedly performing step b) (S20), the first channel layer 231 is formed in a plurality of layers on the exposed surface 211, and then by repeatedly performing step c) (S30), the second channel layer 232 is formed in a plurality of layers on the first channel layer 231. Repeating step b) (S20) may be performed by sequentially performing a plurality of times the injection of a source gas containing at least one of indium, zinc, and tin and the injection of a reactant gas containing oxygen. As a result, the first channel layer 231 may be formed in a plurality of layers through atomic layer deposition. Repeating step c) (S30) may be performed by sequentially performing a plurality of times the injection of a source gas containing gallium and the injection of a reactant gas containing oxygen. As a result, the second channel layer 232 may be formed in a plurality of layers through atomic layer deposition. The step of repeatedly performing step b) and then repeating step c) can be repeated until an oxide layer 230 is formed on exposed surface 211 to a predetermined thickness.

[0102] 2 to 11, the method for manufacturing a metal oxide semiconductor according to the present invention may further include step d) (S40). Step d) (S40) may be performed by forming the first channel layer 231 on the second channel layer 232 using at least one of indium oxide, zinc oxide, and tin oxide. Step d) (S40) may be performed by the injection unit 4 sequentially injecting a source gas containing at least one of indium, zinc, and tin and a reactant gas containing oxygen. Thus, the first channel layer 231 may be formed on the second channel layer 232 through atomic layer deposition. The source gas containing at least one of indium, zinc, and tin may be injected through the first gas passage 4a. In this case, the first gas passage 4a may be connected to the source supply unit 5. The reactant gas containing oxygen may be injected through the second gas passage 4b. In this case, the second gas passage 4b ​​may be connected to the reactant supply unit 8. The reactant gas containing oxygen may be injected through a third gas passage. In this case, the third gas passage may be connected to the reactant supply unit 8. When the metal oxide semiconductor 200 is a three-dimensional transistor, the d) step (S40) may be performed by forming the first channel layer 231 on a side surface of the second channel layer 232.

[0103] 2 to 11, the method for manufacturing a metal oxide semiconductor according to the present invention may further include a step (S50, shown in FIG. 11) of repeatedly performing step c) after performing step d). Through this step (S50), the first channel layer 231 and the second channel layer 232 may be alternately formed on the exposed surface 211, such as the first channel layer 231, the second channel layer 232, the first channel layer 231, the second channel layer 232, etc. The step (S50) of repeatedly performing step c) after performing step d) may be repeatedly performed until the oxide layer 230 is formed to a predetermined thickness on the exposed surface 211.

[0104] 2 to 12, the method for manufacturing a metal oxide semiconductor according to the present invention may include a step (S11, shown in FIG. 12) of treating the exposed surface (improving film quality). Such step (S11) may be performed before performing step b) (S20). As a result, the method for manufacturing a metal oxide semiconductor according to the present invention is embodied in such a way that the first channel layer 231 is formed on the exposed surface 211 after treating the exposed surface 211, thereby further improving the step coverage of the first channel layer 231. The step (S11) of treating the exposed surface 211 may be performed by the spray unit 4.

[0105] The step (S11) of treating the exposed surface can be performed by treating the exposed surface 211 with plasma using at least one of ozone (O3), hydrogen (H2), and ammonia (NH3). In this case, the exposed surface 211 can be treated using plasma generated by the injection unit 4 using the second plate 42 and the first plate 41, and at least one of ozone (O3), hydrogen (H2), and ammonia (NH3).

[0106] The step (S11) of treating the exposed surface can also be performed by treating the exposed surface 211 using a thermal treatment process in an oxygen (O2) atmosphere. In this case, the spray unit 4 creates an oxygen atmosphere in the processing space 100, and a heating unit (not shown) supplies heat to perform the step (S11) of treating the exposed surface. The heating unit can be installed in at least one of the lid and the substrate support unit 3.

[0107] 2 to 13, in the method for manufacturing a metal oxide semiconductor according to the modified embodiment of the present invention, step b) (S20) and step c) (S30) can be implemented as follows.

[0108] b) Step (S20) can be achieved by forming the first channel layer 231 using at least one of indium zinc oxide (IZO), indium tin oxide (ITO), and zinc tin oxide (ZTO).

[0109] b) Step (S20) may include a step (S21) of depositing indium zinc oxide. The step (S21) of depositing indium zinc oxide may be performed by sequentially performing an indium oxide subcycle (ISC) and a zinc oxide subcycle (ZSC).

[0110] The indium oxide subcycle (ISC) can deposit indium oxide through atomic layer deposition by sequentially injecting a source gas containing indium and a reactant gas containing oxygen. The indium oxide subcycle (ISC) can deposit indium oxide through atomic layer deposition by sequentially injecting a source gas containing indium and a reactant gas containing oxygen multiple times. The source gas containing indium can be injected through a first gas passage 4a. In this case, the first gas passage 4a can be connected to the source supply unit 5. The reactant gas containing oxygen can be injected through a second gas passage 4b. In this case, the second gas passage 4b ​​can be connected to the reactant supply unit 8. The reactant gas containing oxygen can be injected through a third gas passage. In this case, the third gas passage can be connected to the reactant supply unit 8.

[0111] The zinc oxide subcycle (ZSC) can deposit zinc oxide through atomic layer deposition by sequentially injecting a zinc-containing source gas and an oxygen-containing reactant gas. The zinc oxide subcycle (ZSC) can deposit zinc oxide through atomic layer deposition by sequentially injecting a zinc-containing source gas and an oxygen-containing reactant gas multiple times. The zinc-containing source gas can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The oxygen-containing reactant gas can be injected through a second gas flow path 4b. In this case, the second gas flow path 4b can be connected to the reactant supply unit 8. The oxygen-containing reactant gas can be injected through a third gas flow path. In this case, the third gas flow path can be connected to the reactant supply unit 8.

[0112] By sequentially performing the indium oxide subcycle (ISC) and zinc oxide subcycle (ZSC), the step of depositing indium zinc oxide (S21) can sequentially deposit indium oxide and zinc oxide on the exposed surface 211 to form indium zinc oxide (IZO) on the exposed surface 211. The indium zinc oxide (IZO) can form the entirety of the first channel layer 231 or a part of the first channel layer 231. The step of depositing indium zinc oxide (S21) can also be performed by sequentially performing the indium oxide subcycle (ISC) and zinc oxide subcycle (ZSC) multiple times.

[0113] b) Step (S20) may include a step (S22) of depositing indium tin oxide. The step (S22) of depositing indium tin oxide may be performed by sequentially performing an indium oxide subcycle (ISC) and a tin oxide subcycle (TSC). The indium oxide subcycle (ISC) may be implemented in substantially the same manner as the step (S21) of depositing indium zinc oxide, and therefore a detailed description thereof will be omitted.

[0114] The tin oxide subcycle (TSC) can deposit tin oxide through atomic layer deposition by sequentially injecting a tin-containing source gas and an oxygen-containing reactant gas. The tin oxide subcycle (TSC) can deposit tin oxide through atomic layer deposition by sequentially injecting a tin-containing source gas and an oxygen-containing reactant gas multiple times. The tin-containing source gas can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The oxygen-containing reactant gas can be injected through a second gas flow path 4b. The second gas flow path 4b can be connected to the reactant supply unit 8. The oxygen-containing reactant gas can also be injected through a third gas flow path. In this case, the third gas flow path can be connected to the reactant supply unit 8.

[0115] By sequentially performing the indium oxide subcycle (ISC) and the tin oxide subcycle (TSC), the step of depositing indium tin oxide (S22) can sequentially deposit indium oxide and tin oxide on the exposed surface 211 to form indium tin oxide (ITO) on the exposed surface 211. The indium tin oxide (ITO) can form the entirety of the first channel layer 231 or a part of the first channel layer 231. The step of depositing indium tin oxide (S22) can also be performed by sequentially performing the indium oxide subcycle (ISC) and the tin oxide subcycle (TSC) multiple times.

[0116] b) Step (S20) may include a step (S23) of depositing zinc tin oxide. The step (S23) of depositing zinc tin oxide may be performed by sequentially performing a zinc oxide subcycle (ZSC) and a tin oxide subcycle (TSC). The zinc oxide subcycle (ZSC) may be implemented in substantially the same manner as described in the step (S21) of depositing indium zinc oxide, and the tin oxide subcycle (TSC) may be implemented in substantially the same manner as described in the step (S22) of depositing indium tin oxide, so detailed description will be omitted. By sequentially performing the zinc oxide subcycle (ZSC) and the tin oxide subcycle (TSC), the step (S23) of depositing zinc tin oxide may deposit zinc oxide and tin oxide in sequence on the exposed surface 211 to form zinc tin oxide (ZTO) on the exposed surface 211. The zinc tin oxide (ZTO) may form the entire first channel layer 231 or a part of the first channel layer 231. The step (S23) of depositing zinc tin oxide can also be performed by sequentially performing a zinc oxide subcycle (ZSC) and a tin oxide subcycle (TSC) multiple times.

[0117] Meanwhile, the step b) (S20) may include at least one of a step of depositing indium zinc oxide (S21), a step of depositing indium tin oxide (S22), and a step of depositing zinc tin oxide (S23).

[0118] The c) step (S30) can be performed by forming the second channel layer 232 using at least one of indium gallium oxide (IGO), gallium tin oxide (GTO), and gallium zinc oxide (GZO).

[0119] The step c) (S30) may include a step S31 of depositing indium gallium oxide. The step S31 of depositing indium gallium oxide may be performed by sequentially performing an indium oxide subcycle (ISC) and a gallium oxide subcycle (GSC). The indium oxide subcycle (ISC) may be implemented in substantially the same manner as the step S21 of depositing indium zinc oxide in the step b) (S20), and therefore a detailed description thereof will be omitted.

[0120] The gallium oxide subcycle (GSC) can deposit gallium oxide through atomic layer deposition by sequentially injecting a gallium-containing source gas and an oxygen-containing reactant gas. The gallium oxide subcycle (GSC) can deposit gallium oxide through atomic layer deposition by sequentially injecting a gallium-containing source gas and an oxygen-containing reactant gas multiple times. The gallium-containing source gas can be injected through a first gas passage 4a. In this case, the first gas passage 4a can be connected to the source supply unit 5. The oxygen-containing reactant gas can be injected through a second gas passage 4b. In this case, the second gas passage 4b ​​can be connected to the reactant supply unit 8. The oxygen-containing reactant gas can also be injected through a third gas passage. In this case, the third gas passage can be connected to the reactant supply unit 8.

[0121] By sequentially performing the indium oxide subcycle (ISC) and the gallium oxide subcycle (GSC), the indium gallium oxide depositing step (S31) can form indium gallium oxide (IGO) on the first channel layer 231 by sequentially depositing indium oxide and gallium oxide on the first channel layer 231. The indium gallium oxide (IGO) can form the entire second channel layer 232 or a part of the second channel layer 232. The indium gallium oxide depositing step (S31) can also be performed by sequentially performing the indium oxide subcycle (ISC) and the gallium oxide subcycle (GSC) multiple times.

[0122] The step (S30) of c) may include a step (S32) of depositing gallium tin oxide. The step (S32) of depositing gallium tin oxide may be performed by sequentially performing a gallium oxide subcycle (GSC) and a tin oxide subcycle (TSC). The gallium oxide subcycle (GSC) is implemented in a manner similar to that described in the step (S31) of depositing indium gallium oxide, and the tin oxide subcycle (TSC) is implemented in a manner similar to that described in the step (S22) of depositing indium tin oxide in the step (S20) of b), and therefore a detailed description thereof will be omitted.

[0123] By sequentially performing the gallium oxide subcycle (GSC) and the tin oxide subcycle (TSC), the step of depositing gallium tin oxide (S32) can form gallium tin oxide (GTO) on the first channel layer 231 by sequentially depositing gallium oxide and tin oxide on the first channel layer 231. The gallium tin oxide (GTO) can form the entire second channel layer 232 or a part of the second channel layer 232. The step of depositing gallium tin oxide (S32) can also be performed by sequentially performing the gallium oxide subcycle (GSC) and the tin oxide subcycle (TSC) multiple times.

[0124] The step c) (S30) may include a step S33 of depositing gallium zinc oxide. The step S33 of depositing gallium zinc oxide may be performed by sequentially performing a gallium oxide subcycle (GSC) and a zinc oxide subcycle (ZSC). The gallium oxide subcycle (GSC) is implemented in a manner similar to that described in the step S31 of depositing indium gallium oxide, and the zinc oxide subcycle (ZSC) is implemented in a manner similar to that described in the step S21 of depositing indium zinc oxide in the step b) (S20), and therefore detailed description thereof will be omitted.

[0125] By sequentially performing the gallium oxide subcycle (GSC) and zinc oxide subcycle (ZSC), the step of depositing gallium zinc oxide (S33) can form gallium zinc oxide (GZO) on the first channel layer 231 by sequentially depositing gallium oxide and zinc oxide on the first channel layer 231. The gallium zinc oxide (GZO) can form the entire second channel layer 232 or a part of the second channel layer 232. The step of depositing gallium zinc oxide (S33) can also be performed by sequentially performing the gallium oxide subcycle (GSC) and zinc oxide subcycle (ZSC) multiple times.

[0126] Meanwhile, the step c) (S30) may include at least one of a step of depositing indium gallium oxide (S31), a step of depositing gallium tin oxide (S32), and a step of depositing gallium zinc oxide (S33).

[0127] 2 to 13, the method for manufacturing a metal oxide semiconductor according to the modified embodiment of the present invention may include a step of repeatedly performing step b) (S20) and then repeatedly performing step c) (S30). In this case, by repeatedly performing step b) (S20), the first channel layer 231 is formed in a plurality of layers on the exposed surface 211, and then by repeatedly performing step c) (S30), the second channel layer 232 is formed in a plurality of layers on the first channel layer 231. The step of repeatedly performing step b) and then repeating step c) can be repeatedly performed until the oxide layer 230 is formed to a predetermined thickness on the exposed surface 211.

[0128] 2 to 14, the method for manufacturing a metal oxide semiconductor according to the modified embodiment of the present invention may further include step d) (S40).

[0129] d) Step (S40) can be done by forming the first channel layer 231 using at least one of indium zinc oxide (IZO), indium tin oxide (ITO), and zinc tin oxide (ZTO).

[0130] d) Step (S40) may include a step (S41) of depositing indium zinc oxide. The step (S41) of depositing indium zinc oxide may be performed by sequentially performing an indium oxide subcycle (ISC) and a zinc oxide subcycle (ZSC). By sequentially performing the indium oxide subcycle (ISC) and the zinc oxide subcycle (ZSC), the step (S41) of depositing indium zinc oxide may sequentially deposit indium oxide and zinc oxide on the second channel layer 232 to form indium zinc oxide (IZO) on the second channel layer 232. The indium zinc oxide (IZO) may form the entire first channel layer 231 or a part of the first channel layer 231. The step (S41) of depositing indium zinc oxide may also be performed by sequentially performing the indium oxide subcycle (ISC) and the zinc oxide subcycle (ZSC) multiple times.

[0131] d) Step (S40) may include a step (S42) of depositing indium tin oxide. The step (S42) of depositing indium tin oxide may be performed by sequentially performing an indium oxide subcycle (ISC) and a tin oxide subcycle (TSC). By sequentially performing the indium oxide subcycle (ISC) and the tin oxide subcycle (TSC), the step (S42) of depositing indium tin oxide may sequentially deposit indium oxide and tin oxide on the second channel layer 232 to form indium tin oxide (ITO) on the second channel layer 232. The indium tin oxide (ITO) may form the entire first channel layer 231 or a part of the first channel layer 231. The step (S42) of depositing indium tin oxide may also be performed by sequentially performing the indium oxide subcycle (ISC) and the tin oxide subcycle (TSC) multiple times.

[0132] d) step (S40) may include a step (S43) of depositing zinc tin oxide. The step (S43) of depositing zinc tin oxide may be performed by sequentially performing a zinc oxide subcycle (ZSC) and a tin oxide subcycle (TSC). By sequentially performing the zinc oxide subcycle (ZSC) and the tin oxide subcycle (TSC), the step (S43) of depositing zinc tin oxide may form zinc tin oxide (ZTO) on the second channel layer 232 by sequentially depositing zinc oxide and tin oxide on the second channel layer 232. The zinc tin oxide (ZTO) may form the entire first channel layer 231 or a part of the first channel layer 231. The step (S43) of depositing zinc tin oxide may also be performed by sequentially performing the zinc oxide subcycle (ZSC) and the tin oxide subcycle (TSC) multiple times.

[0133] Meanwhile, d) step (S40) may include at least one of a step of depositing indium zinc oxide (S41), a step of depositing indium tin oxide (S42), and a step of depositing zinc tin oxide (S43).

[0134] 2 to 14, the method for manufacturing a metal oxide semiconductor according to the modified embodiment of the present invention may further include a step (S50, shown in FIG. 11) of repeatedly performing step c) after performing step d). Through this step (S50), the first channel layer 231 and the second channel layer 232 may be alternately formed on the exposed surface 211, such as the first channel layer 231, the second channel layer 232, the first channel layer 231, the second channel layer 232, etc. The step (S50) of repeatedly performing step c) after performing step d) may be repeated until the oxide layer 230 is formed to a predetermined thickness on the exposed surface 211.

[0135] The present invention described above is not limited to the above-mentioned embodiments and the accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications and alterations are possible without departing from the technical spirit of the present invention.

Claims

1. Chamber, a substrate support disposed within the chamber; an ejection unit disposed above the substrate support unit; a first source supply unit for supplying a first source gas; a second source supply unit for supplying a second source gas; a first supply line connecting the first source supply unit and the injector; a second supply line connecting the second source supply unit and the injection unit; a mixing unit installed on the first supply line so as to be disposed between the first source supply unit and the injection unit; a first connection line connecting the second supply line to at least one of the first supply line and the mixing section; and The first connection line includes a first path change unit installed at a first connection point where the first connection line is connected to the second supply line, the first path changing unit changes a flow path of the second source gas so that the second source gas supplied from the second source supply unit is supplied to one selected from the mixing unit and the injection unit.

2. 2. The substrate processing apparatus of claim 1, wherein, when the injection unit injects a mixed gas of a plurality of source gases onto the substrate to perform a processing process, the first path changing unit changes a flow path of the second source gas so that the second source gas is supplied to the mixing unit.

3. 2. The substrate processing apparatus of claim 1, wherein, when the injection unit injects a plurality of source gases onto the substrate in sequence to perform a processing process, the first path changing unit changes a flow path of the second source gas so that the second source gas is supplied to the injection unit.

4. The first route changing unit, a first connection valve for selectively opening and closing the first connection line; and 4. The substrate processing apparatus according to claim 1, further comprising a first supply valve that selectively opens and closes the second supply line.

5. a first mixing valve installed in the first supply line so as to be disposed between the first supply portion and the mixing portion; and The substrate processing apparatus of claim 1 , further comprising: a second mixing valve installed on the first supply line so as to be disposed between the mixing unit and the spray unit.

6. An interpurge section connected to the mixing section, the injection unit injects a mixed gas of a plurality of source gases onto the substrate to perform a first process, and then injects the plurality of source gases sequentially onto the substrate to perform a second process; 2. The substrate processing apparatus of claim 1, wherein the inter-purge section supplies a purge gas to the mixing section to purge the inside of the mixing section before supplying only the first source gas to the mixing section to perform the second processing step after the first processing step is performed.

7. a third source supply unit for supplying a third source gas; a third supply line connecting the third source supply unit and the injection unit; a second connecting line connecting the third supply line to at least one of the first supply line and the mixing section; and the second connection line includes a second path change unit installed at a second connection point where the second connection line is connected to the third supply line, 2. The substrate processing apparatus of claim 1, wherein the second path changing unit changes a flow path of the third source gas so that the third source gas supplied from the third source supply unit is supplied to one selected from the mixing unit and the injection unit.

8. The substrate processing apparatus according to claim 1 , further comprising a reactant supply unit for supplying a reactant gas to the injection unit.

9. A method for manufacturing a metal oxide semiconductor, comprising forming an oxide layer on an exposed surface of a thin film, the method comprising the steps of: a) providing a substrate having an exposed surface of the thin film patterned; b) forming a first channel layer on the exposed surface using at least one of indium oxide (InO), zinc oxide (ZnO), and tin oxide (SnO); and c) forming a second channel layer using gallium oxide (GaO).

10. The method for producing a metal oxide semiconductor according to claim 9 , further comprising the step of repeatedly carrying out the step b) and then repeatedly carrying out the step c).

11. 10. The method for producing a metal oxide semiconductor according to claim 9, further comprising the step of: d) forming the first channel layer using at least one of indium oxide, zinc oxide, and tin oxide for the second channel layer.

12. The method for producing a metal oxide semiconductor according to claim 11, further comprising the step of repeatedly carrying out the step d) and then the step c).

13. 10. The method for producing a metal oxide semiconductor according to claim 9, further comprising the step of treating (improving film quality) the exposed surface before carrying out the step b).

14. The step of treating the exposed surface comprises using ozone (O ３ ), hydrogen (H ２ ), and ammonia (NH ３ 14. The method for producing a metal oxide semiconductor according to claim 13, further comprising treating the metal oxide semiconductor with plasma using at least one of the following:

15. The step of treating the exposed surface comprises treating with oxygen (O ２ 14. The method of claim 13, further comprising the step of: subjecting the metal oxide semiconductor to a thermal treatment process in a nitrogen atmosphere.

16. The step b) forms the first channel layer using at least one of indium zinc oxide (IZO), indium tin oxide (ITO), and zinc tin oxide (ZTO); 10. The method of claim 9, wherein in the step c), the second channel layer is formed using at least one of indium gallium oxide (IGO), gallium tin oxide (GTO), and gallium zinc oxide (GZO).

17. The method for producing a metal oxide semiconductor according to claim 16, further comprising the step of repeatedly carrying out the step b) and then repeatedly carrying out the step c).

18. d) forming the first channel layer using at least one of indium zinc oxide (IZO), indium tin oxide (ITO), and zinc tin oxide (ZTO) for the second channel layer. The method for manufacturing a metal oxide semiconductor according to claim 16,

19. 20. The method for producing a metal oxide semiconductor according to claim 18, further comprising the step of repeatedly carrying out the step d) and then the step c).

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