Monitoring device capable of measuring characteristics of an edge region and method for manufacturing the same

Abstract

Provided are a monitoring device capable of measuring characteristics of an edge region of a diagnosed object and a method for manufacturing the same. 【Solution means】The monitoring device according to the present invention includes a lower cover, a guide portion arranged on the lower cover, a circuit module on which at least one electronic element is arranged on the upper portion, and an upper cover arranged on the guide portion and the circuit module. A space is formed in the guide portion, and the circuit module is arranged in the space.

Description

Technical Field

[0001] The present invention relates to a monitoring device capable of measuring characteristics of an edge region of a subject to be diagnosed and a method for manufacturing the same.

Background Art

[0002] An electrostatic chuck is a core component in a semiconductor device. Such an electrostatic chuck may have its temperature increased and decreased in each process, and the resistance component of the internal heating electrode may change, resulting in a decrease in temperature uniformity. Furthermore, the deviation of the inclination of the electrostatic chuck that may occur during the process of alternating the electrostatic chuck affects the plasma distribution. Also, the change in the electrical component of the internal electrode of the electrostatic chuck affects the electrostatic force, and the vibration of the semiconductor device affects the process result. When performing a semiconductor process or a display process in a state where the electrostatic chuck is not formed at a desired temperature or temperature distribution, the electrostatic force is not constant, the semiconductor device itself has vibration, or the electrostatic chuck or the shower head is twisted, especially when performing an etching process, it may cause a serious problem that defects occur on the wafer and all the wafers have to be discarded. On the other hand, there is a monitoring device as shown in FIG. 1 for measuring the characteristics of an electrostatic chuck. The monitoring device has a structure in which a plurality of elements 102 such as sensors are arranged in the internal space of a concave-shaped wafer 100. Such a structure makes it impossible for the sensor to measure the characteristics of the edge region of the electrostatic chuck by the side surface of the wafer 100.

Summary of the Invention

Problems to be Solved by the Invention

[0003] An object of the present invention is to provide a monitoring device capable of measuring characteristics of an edge region of a subject to be diagnosed and a method for manufacturing the same.

Means for Solving the Problems

[0004] In order to achieve the above-described object, a monitoring device according to an embodiment of the present invention includes a lower cover, a guide portion arranged on the lower cover, a circuit module in which at least one electronic element is arranged on the upper portion of a circuit board, and an upper cover arranged on the guide portion and the circuit module. Here, a space is formed in the guide portion, and the circuit module is arranged in the space.

[0005] A monitoring device according to another embodiment of the present invention includes a lower cover, a circuit module arranged on the lower cover, a plurality of elements arranged on the circuit module, and an upper cover arranged on the plurality of elements. Here, the plurality of elements have a first element with a relatively low height and a second element with a relatively high height, and by filling the first element with a filler, the height of the first element filled with the filler is the same as that of the second element.

[0006] A monitoring device according to still another embodiment of the present invention includes a lower cover, a circuit module arranged on the lower cover, at least one electronic element arranged on the circuit module, and an upper cover arranged on the electronic element. Here, the sensor as the electronic element is arranged on the region of the circuit module corresponding to the extreme edge region of the wafer used in the process.

[0007] A manufacturing method of a monitoring device according to an embodiment of the present invention includes a step of arranging a circuit board on a lower cover, a step of arranging a first element with a relatively low height and a second element with a relatively high height on the circuit board, a step of filling the first element with a filler to make the height the same as that of the second element, and a step of arranging an upper cover on the first element and the second element.

Advantages of the Invention

[0008] The monitoring device and the method for manufacturing the same according to the present invention can be arranged in a region corresponding to an extreme edge region of a wafer in which the sensor is used in a subsequent process, whereby the monitoring device can measure characteristics of an edge region of a subject to be diagnosed.

Brief Description of the Drawings

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Embodiments for Carrying Out the Invention

[0010] As used herein, singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "composed of" or "including" should not necessarily be construed as including all of the plurality of components or plurality of steps described in the specification. Some of the components or steps may not be included, or additional components or steps may be further included. Also, terms such as "... part" and "module" described in the specification mean a unit that processes at least one function or operation, which may be implemented in hardware or software, or implemented by a combination of hardware and software.

[0011] The present invention relates to a monitoring device, and in, for example, a semiconductor process or a display process, it is possible to measure the temperature distribution of a subject to be diagnosed, for example, an electrostatic chuck, and determine an abnormal state of the electrostatic chuck. For example, in the plasma state of a semiconductor process or a display process, the state of an RF voltage, current, or power can be measured. Further, the monitoring device can determine an abnormal state of the electrostatic chuck by determining the DC voltage of the electrostatic chuck.

[0012] As another example, the monitoring device can measure the degree of inclination of the electrostatic chuck or the degree of inclination of the shower head in a manner of measuring the distance from the monitoring device to the upper electrode or the lower electrode. Further, the monitoring device can measure the degree of vibration generated in the electrostatic chuck or the semiconductor device.

[0013] According to one embodiment, the monitoring device of this embodiment can measure a wide area while having a thickness below a certain standard for automatic transfer and conveyance utilizing a robot. In particular, the monitoring device can measure the characteristics of the edge region of the subject to be diagnosed corresponding to the extreme edge region of the wafer used in subsequent processes.

[0014] In an existing wafer type monitoring device as shown in FIG. 1, since a plurality of electronic elements 102 such as sensors are arranged inside a concave-shaped wafer 100, sensors cannot be arranged in the side thickness region of the wafer 100. As a result, it was not possible to measure the temperature etc. of the portion corresponding to the edge region of the wafer 100 in the electrostatic chuck, that is, the edge region corresponding to within 3 mm from the reference outer diameter of the wafer.

[0015] On the other hand, the cover of the monitoring device of the present invention has a planar shape instead of a concave shape, and sensors can be arranged in the vicinity of the edge of the cover, for example, in a region corresponding to within 3 mm from the outer diameter of the cover. As a result, the edge region of the electrostatic chuck can be sensed, that is, the sensing region can be widened.

[0016] A heater is arranged in the edge region of the electrostatic chuck, and heat or cooling is applied to the wafer on which an etching or vapor deposition process etc. is performed by such a heater, that is, the heater in the edge region of the electrostatic chuck affects the wafer. Therefore, it was necessary to measure the temperature etc. of the edge region of the electrostatic chuck, but it was impossible with conventional monitoring devices. In order to solve such problems, the monitoring device of the present invention proposes a structure capable of measuring the characteristics of the edge region of the electrostatic chuck.

[0017] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. For the sake of convenience of explanation, it is assumed that the object measured by the monitoring device is an electrostatic chuck, but it is not limited thereto. FIG. 2 is a drawing showing an arrangement of monitoring devices according to an embodiment of the present invention, FIG. 3 is an exploded view showing a configuration of a monitoring device according to an embodiment of the present invention, and FIGS. 4 and 5 are drawings showing an arrangement of monitoring devices according to an embodiment of the present invention. FIG. 6 is a drawing showing a guide member and a circuit board according to an embodiment of the present invention, FIG. 7 is a drawing showing a coupling structure of a plurality of elements of a monitoring device according to an embodiment of the present invention, and FIG. 8 is a drawing showing a process of arranging a plurality of electronic elements according to an embodiment of the present invention. FIG. 9 is a drawing showing a part of a monitoring device according to another embodiment of the present invention, FIG. 10 is an exploded view showing a structure of a monitoring device according to another embodiment of the present invention, and FIG. 11 is a drawing showing an arrangement of a guide member and a circuit module according to an embodiment of the present invention.

[0018] Referring to FIG. 2, the monitoring device 200 of the present embodiment is arranged in contact or non-contact on the electrostatic chuck 202 in the chamber, and the shower head 204 is arranged in a state separated from the monitoring device 200. In this case, the transfer path of the wafer in the apparatus is designed to be narrow. That is, since the interval between the shower head 204 and the electrostatic chuck 202 is designed to be narrow for plasma density or uniformity management, it is preferable that the monitoring device 200 is also designed to have a thickness below a reference value.

[0019] According to an embodiment, the monitoring device 200 of the present embodiment can arrange a plurality of electronic elements on a circuit module, fill a filler on the low electronic elements, and then polish the upper surface to design the thickness below the reference value. The monitoring device 200 determines the presence or absence of an abnormality in the electrostatic chuck 202 before the process starts. If it is determined that there is no abnormality in the electrostatic chuck 202, the monitoring device 200 is removed and the actual process can be performed. For example, after the monitoring device 200 is removed, wafers for a deposition process, an etching process, an implant process, and a photo process can be arranged on the electrostatic chuck 202. Such a monitoring device 200 can be placed on the electrostatic chuck 202 by using a robot without opening the chamber, and as a result, the chamber can maintain a vacuum state.

[0020] According to one embodiment, the monitoring device 200 can also measure the temperature or inclination of the electrostatic chuck 202, the distance between the upper electrode and the lower electrode in the semiconductor device, or the voltage and current in the plasma environment or the degree of vibration of the device. According to one embodiment, the monitoring device 200 can also be arranged inside the edge ring (400) on the electrostatic chuck 202 as shown in FIGS. 4 and 5.

[0021] Referring specifically to FIGS. 3 to 8, the monitoring device 200 of this embodiment includes a lower cover 300, a guide portion 302, a circuit module 304, and an upper cover 306. The lower cover 300 protects the circuit module 304 and a plurality of electronic elements on the circuit module 304 from the external environment, for example, the plasma environment, and protects the chamber from contamination generated from the circuit module 304. According to one embodiment, the lower cover 300 can have a circular shape that is the same as the shape of the wafer as shown in FIG. 3, is a planar shape, and is formed of silicon or glass, which are materials commonly used in semiconductor processes. Further, the lower cover 300 is silicon carbide, sapphire, Y in the ceramic series 2 O 3 、YOF、Al 2 O 3 、or formed of engineering plastics such as Teflon (registered trademark), PEEK, and carbon fiber.

[0022] Since such a lower cover 300 is a part that directly contacts the electrostatic chuck 202, which is the object to be diagnosed, the lower cover 300 can have the same flatness as the silicon wafer. According to one embodiment, the lower cover 300 is adhered by using the guide portion 302 or the circuit module 304 and the adhesive layer 308 as shown in FIG. 7. Here, the adhesive layer 308 may be an adhesive such as an acrylic series or a silicon series. On the other hand, the lower cover 300 can be adhered to the guide portion 302 or the circuit module 304 by using a thermosetting material such as epoxy or an insulating material such as SOG or SOD.

[0023] The guide portion 302 can protect the side surface portion of the circuit module 304 from the external environment, for example, plasma, and can improve the mechanical strength of the monitoring device 200 depending on the form. In addition, the section connected to the upper cover 306, the guide portion 302, and the lower cover 300, that is, the section where the upper cover 306, the guide portion 302, and the lower cover 300 all exist, can also cool the circuit module 304 from the heat source. Therefore, the upper cover 306, the guide portion 302, and the lower cover 300 can have the same or similar thermal conductivity as silicon.

[0024] According to one embodiment, the guide portion 302 is arranged on the lower cover 300, and a space into which the circuit module 304 is inserted can be formed. That is, the circuit module 304 can be inserted and fixed into the space of the guide portion 302, and on the other side, the guide portion 302 can be structured to surround the circuit module 304. Such a guide portion 302 can also be formed of the same material as a silicon wafer, and can also use silicon carbide, sapphire, ceramics series Al 2 O 3 , YOF, Y 2 O 3 etc., and can also use PEEK, Teflon (registered trademark), carbon fiber, etc., which are engineering plastics.

[0025] According to one embodiment, the guide portion 302 can have the same or a similar size and shape as the wafer, and one of the distances from the edge of the guide portion 302 to the space can have a different value as shown in FIG. 6. For example, the distance from the edge of the guide portion 302 to the first part of the space can be a, and the distance from the edge of the guide portion 302 to the second part of the space can be b which is greater than a. If all the distances from the edge of the guide portion 302 to the space are a, the guide portion 302 may become too thin and the guide portion 302 may be damaged, and the strength of the monitoring device 200 cannot be reinforced. Therefore, while maintaining the distance from the edge of the guide portion 302 to a part of the space at b or more, the distance from the edge of the guide portion 302 to the other part of the space can be formed at a according to the position where the sensor 600 is arranged.

[0026] This is because if the distance from the edge of the guide portion 302 to the space is a, the corresponding part of the circuit module 304 can be close to the edge of the guide portion 302 as shown in FIG. 6. If the sensor 600 is arranged on the corresponding part in such a circuit module 304, the temperature of the electrostatic chuck corresponding to the vicinity of the edge of the wafer can be measured. For example, at least a part of the sensor 600 can be arranged in the region between the part of the circuit module 304 where the distance to the space is a and the part where the distance to the space is b. According to one embodiment, the distance from the edge of the guide portion 302 to the space is 1.5 mm to 3 mm from the edge of the wafer corresponding to the extreme edge of the wafer. Of course, such a length varies depending on the size of the wafer, but the distance from the edge of the guide portion 302 to the space can correspond to the extreme edge region of the wafer used in the subsequent process.

[0027] From another perspective, the position of the sensor arranged on the circuit module 304 corresponds to the extreme edge region of the wafer. However, the mechanical strength of the guide portion 302, which has been processed to the extreme edge region and weakened in a certain part of the guide portion 302 in this way, may be compensated by other parts of the guide portion 302. According to one embodiment, the space of the guide part 302 and the circuit module 304 each have a structure in which small squares are formed on the four sides of a large square. Of course, the space and the circuit module 304 can also have other shapes such as a circular shape. That is, as long as the sensors can be arranged at positions corresponding to the extreme edge regions of the wafer, the space and the circuit module 304 can have various shapes.

[0028] According to another embodiment, one of the distances from the edge of the guide part 302 to the circuit module 304 has a different value. For example, the distance from the edge of the guide part 302 to the first part of the circuit module 304 can be c, and the distance from the edge of the guide part 302 to the second part of the circuit module 304 can be d which is greater than c. According to still another embodiment, as shown in FIGS. 10 and 11, the circuit module 304 has a circular or elliptical shape identical or similar to the wafer, and the guide part 302 can include a side part that protects the side surface of the circuit module 304 and a plurality of protrusions 1000 protruding in a direction intersecting the side part, for example, a vertical direction. The plurality of protrusions 1000 can be spaced apart from each other, the circuit module 304 can also have a circular or elliptical shape identical or similar to the wafer, and the plurality of protrusions 1000 can cover a part of the upper surface of the circuit module 304. At this time, the sensors for sensing the edge of the object to be diagnosed can be arranged in the space 1010 between the plurality of protrusions 1000 of the circuit module 304, and electronic elements such as microprocessors can be arranged outside the plurality of protrusions 1000 of the circuit module 304. From another perspective, the guide part 302 covers the edge of the circuit module 304, but a groove 1010 is formed in the guide part 302, and at least a part of the sensors for sensing the edge of the object to be diagnosed can be arranged in the groove 1010.

[0029] The circuit module 304 can be arranged in the inner space of the guide part 302 on the lower cover 300. Upon examining such a circuit module 304 in detail, a plurality of electronic components 602 such as a microprocessor, a wireless communication device, a wireless charging device, a sensor, etc. can be arranged on the circuit board 800. In particular, some sensors 600 can be arranged on a region corresponding to an extreme edge region of the wafer on the circuit board 800.

[0030] According to one embodiment, as shown in FIG. 8, since the thickness of the circuit board 800 is below a certain level, it may be vulnerable to stress. In order to reinforce this, a fixing cover 402 for improving flatness and preventing distortion of the circuit board 800 can be arranged on the area excluding the plurality of electronic components 602 arranged on the circuit board 800. The fixing cover 402 can use the same or similar materials as the upper cover 306 or the lower cover 300 such as epoxy, silicon, silicon carbide, glass, etc. At this time, after arranging the fixing cover 402 on the circuit board 800, free spaces for leads of the plurality of electronic components, soldering pads, etc. are generated. In this case, a filler 404 can be used to fill the free space, and the filler 404 can be a liquid material such as epoxy, thermosetting resin, ceramic resin, etc. for improving the flatness of the circuit module 304.

[0031] According to one embodiment, the circuit module 304 includes a base substrate to which electrical wirings are connected and a filling substrate for protecting the plurality of electronic components and enhancing flatness, and the base substrate and the filling substrate are adhered by using an acrylic-based or silicon-based adhesive. According to one embodiment, at least a part of the heights of the plurality of electronic components can be different, and thus the filler 404 can be filled on top of the plurality of electronic components with a low height to make the heights of all the electronic components the same. This is because when the heights of the plurality of electronic components are different, it may become difficult to join with the upper cover 306.

[0032] For example, as shown in FIG. 8, the sensor 600 may be relatively lower in height compared to the microprocessor. In this case, the filler 404 may be filled in the upper part of the sensor 600 so that the heights of the sensor 600 and the microprocessor become the same. Here, the height of the upper ends of the plurality of electronic elements can be the same as the height of the upper end of the guide portion 302. According to one embodiment, the filler 404 may be a non-conductor, for example, epoxy or silicon, a thermosetting resin, a ceramic resin, or the like. According to one embodiment, as shown in FIG. 8, after applying the filler 404 on some of the electronic elements, the upper surfaces of the plurality of electronic elements can be polished to make the upper surface of the circuit module 304 flat. That is, the filler filled above a certain height can be removed, and the removed portion is referred to as the polishing layer 406. Depending on the situation, it is also possible to polish up to the surface of the electronic element during the polishing process.

[0033] According to one embodiment, the circuit module 304 can include a circuit board 800 to which electrical wirings are connected and a fixing cover 402 for protecting the plurality of electronic elements and enhancing flatness. Here, the circuit board 800 and the fixing cover 402 can be adhered by using an acrylic-based or silicon-based adhesive. According to one embodiment, as shown in FIG. 9, a first EMI shield layer 406 for electromagnetic wave shielding can be formed on the guide portion 302 and the plurality of electronic elements 602, and a second EMI shield layer can be formed below the circuit module 304. Here, the shield layer can be formed by applying a liquid material or formed of a film. It can also be formed of a material such as gold, silver, copper, aluminum, or a mixed material thereof. According to another embodiment, the EMI shield layer can also be formed on the lower cover 300 and the upper cover 306.

[0034] According to one embodiment, as shown in FIG. 9, a heat insulation layer 408 can be additionally arranged below or above the circuit module 304 to intentionally reduce the thermal conductivity from the heat source to the circuit module 304 and protect a plurality of electronic elements 602 from thermal shock at low or high temperatures. The heat insulation layer 408 at this time can include an aerogel with low thermal conductivity and is arranged in the form of a liquid material or a film. The upper cover 306 can be adhered onto the guide part 302 or the circuit module 304 via an adhesive layer 308 and can protect the elements.

[0035] The adhesive layer 308 is an acrylic-based or silicon-based adhesive. On the other hand, the upper cover 306 can be adhered to the guide part 302 or the circuit module 304 using a thermosetting material such as epoxy or an insulating material such as SOG or SOD. On the other hand, the adhesive layer 308 between the lower cover 300 and the guide part 302 or the circuit module 304 and the adhesive layer 308 between the guide part 302 or the circuit module 304 and the upper cover 306 can be composed of the same adhesive, or can be composed of adhesives with different properties.

[0036] To summarize, in the monitoring device 200 of this embodiment, at least a part of the circuit module 304 is arranged within the space of the guide part 302, and the sensors can be arranged from the central region of the wafer within the circuit module 304 to the region corresponding to the extreme edge region. As a result, the characteristics of the edge region of the electrostatic chuck 202 that applies heat to the edge region of the wafer can be measured.

[0037] On the one hand, although the abnormal state of the electrostatic chuck has been determined above, the monitoring device 200 can be used to diagnose the RF voltage, RF current, RF power, tilt of the chuck, tilt of the shower head, degree of vibration, temperature of the high-temperature chuck in the deposition process, RF voltage, RF current, RF power, tilt of the chuck, tilt of the shower head, temperature, tilt or degree of vibration of the baking chuck in the photo process, temperature, tilt or degree of vibration of the chuck in the implant device, etc. When the temperature of the chuck is low or high, the filled substrates can be arranged for direct measurement, and in some cases, measurement can also be performed at a distance. In addition, the monitoring device 200 can also be used to measure the temperature, vibration or tilt of the photomask used in the exposure process. At this time, the monitoring device 200 can have the same structure as the above-described structure.

[0038] According to another embodiment, the monitoring device 200 may not physically contact the electrostatic chuck 202. The monitoring device 200 can monitor the temperature of the high-temperature chuck non-contact on the lift pin of the chuck in order to diagnose the high-temperature chuck in the deposition process. In addition, the monitoring device 200 can also be used to diagnose the object to be diagnosed with an optical sensor that senses light or an electrical sensor that measures electrical components. At this time, in order to mount the optical sensor, while using the monitoring device 200 having the above-described structure, a light receiving sensor for receiving light can be included, and a hole through which light can pass can be formed in the monitoring device 200. In addition, an electrical sensor can be built into the monitoring device 200 to mount the electrical sensor, and a hole through which electrical components can pass can be formed in the monitoring device 200.

[0039] In addition, a sensor capable of displacement measurement can be built into the monitoring device 200 to measure the tilt, and a hole through which electrical components or optical components can pass can be formed in the monitoring device 200. On the one hand, the components of the above-described embodiments can be easily understood from a process perspective. That is, each component is understood as its own process. Also, the processes of the above-described embodiments can be easily understood from the perspective of the components of the device. The above-described embodiments of the present invention are disclosed for illustrative purposes, and those of ordinary skill in the art who have knowledge of the present invention can make various modifications, changes, and additions within the spirit and scope of the present invention, and such modifications, changes, and additions should be considered to fall within the scope of the following claims.

Explanation of Reference Numerals

[0040] 100 wafer 102 element 200 monitoring device 202 electrostatic chuck 204 shower head 300 lower cover 302 guide part 304 circuit module 306 upper cover 308 adhesive layer 400 edge ring 402 fixed cover 404 filler 406 polishing layer, first EMI shield layer 408 heat insulation layer 600 sensor 602 electronic element 800 circuit board 1000 protrusion 1010 space, groove

Claims

1. A lower cover, a guide part arranged on the lower cover, a circuit module in which at least one electronic element is arranged on the upper part of a circuit board, an upper cover arranged on the guide part or the circuit module, comprising: a space is formed in the guide part, and at least a part of the circuit module is arranged in the space, and the monitoring device is characterized in that.

2. A first distance from an edge of the guide part to a point in the space is different from a second distance from the edge to another point in the space, the first distance is smaller than the second distance, at least a part of the sensors as the electronic elements is arranged in a region between a part corresponding to one point in the space and a part corresponding to another point in the space of the circuit module to measure an edge region of a subject to be diagnosed, and the monitoring device according to claim 1 is characterized in that.

3. The monitoring device is arranged on an electrostatic chuck, the monitoring device is removed after measuring the characteristics of the electrostatic chuck, and a wafer for a process is arranged on the electrostatic chuck after the monitoring device is removed, the sensor is arranged in a region corresponding to an extreme edge region of the wafer in the circuit module, and the monitoring device according to claim 2 is characterized in that.

4. The lower cover and the upper cover each have a planar shape, and the space or the circuit module each has a structure in which a shape with a relatively small size is combined with a relatively large shape, the sensors as the electronic elements are arranged on the relatively small shape, and the monitoring device according to claim 1 is characterized in that.

5. A first element with a relatively low height and a second element with a relatively high height are arranged on the circuit module, after applying a filler on the first element and polishing it to the same height as the second element, the first element coated with the filler, the second element and the guide part have the same height, and the monitoring device according to claim 1 is characterized in that.

6. A first EMI shield layer is formed on the coated first element and the second element, and a second EMI shield layer is formed under the circuit module, and the monitoring device according to claim 5 is characterized in that.

7. The monitoring device according to claim 1, wherein an EMI shield layer for electromagnetic wave shielding is formed on each of the upper cover and the lower cover.

8. The lower cover, the guide portion, or the upper cover is each made of the same material as the silicon wafer, silicon carbide, sapphire, or a ceramic series Y ２ O ３ , YOF, Al ２ O ３ or Teflon (registered trademark), PEEK, or carbon fiber, which is an engineering plastic, and the monitoring device according to claim 1, characterized in that it is formed therefrom.

9. The circuit module includes a circuit board, electronic elements arranged on the circuit board, and a fixed cover arranged in a region on the circuit board excluding the electronic elements. The monitoring device according to claim 1, wherein the fixed cover is formed of epoxy, silicon, silicon carbide, or glass.

10. The guide part and the circuit module each have a circular or elliptical shape. The guide part includes a side part that protects the side surface of the circuit module and a plurality of protrusions that are perpendicular to the side part and cover a part of the upper surface of the circuit module. The monitoring device according to claim 1, wherein the plurality of protrusions are spaced apart from each other, a sensor for sensing a subject to be diagnosed is arranged between the plurality of protrusions of the circuit module, and electronic elements other than the sensor are arranged outside the protrusions of the circuit module.

11. A lower cover, A circuit module arranged on the lower cover, A plurality of elements arranged on the circuit module, An upper cover arranged on the plurality of elements, and The plurality of elements have a first element with a relatively low height and a second element with a relatively high height. The monitoring device is characterized in that by filling a filler on the first element, the heights of the first element filled with the filler and the second element are the same.

12. The monitoring device according to claim 11, wherein a heat insulation layer is formed at the lower part of the circuit module to protect the plurality of elements from thermal shock.

13. A lower cover, A circuit module arranged on the lower cover, At least one electronic element arranged on the circuit module, An upper cover arranged on the electronic element, and The monitoring device is characterized in that a sensor as the electronic element is arranged on a region of the circuit module corresponding to an extreme edge region of a wafer used in the process.

14. The step of arranging a circuit board on a lower cover, The step of arranging a first element with a relatively low height and a second element with a relatively high height on the circuit board. A step of filling a filler on the first element to make it the same height as the second element; A step of arranging an upper cover on the first element and the second element, characterized in that the method for manufacturing a monitoring device includes the above steps.

15. Further including a step of forming a guide portion so as to surround the circuit board, After filling the filler on the first element, by polishing, the heights of the upper ends of the first element filled with the filler, the second element, and the guide portion are the same. The method for manufacturing a monitoring device according to claim 14, characterized in that.

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