Semiconductor packages, resin components for semiconductor packages, and resin molding materials for resin components of semiconductor packages

Abstract

This disclosure relates to suppressing warping in a semiconductor package having a resin component which is a molded body containing a cured product of a resin molding material. [Solution] A semiconductor package 100 comprising a substrate 1, a circuit member 20 including semiconductor chip components 21 and 22 mounted on the main surface S1 of the substrate 1, and a resin member 5 provided around the circuit member 20 on the main surface S1. The resin member 5 is a molded body containing a cured product of a curable resin molding material. The cured product of the resin molding material exhibits a coefficient of linear expansion of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor package, a resin member for a semiconductor package, and a resin molding material for a resin member of a semiconductor package.

Background Art

[0002] In a semiconductor package, a rigid member called a stiffener may be provided at a position surrounding a semiconductor chip component on a substrate (for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003] [[ID=二十三]]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure relates to a semiconductor package having a resin member which is a molded body containing a cured product of a resin molding material, and relates to suppressing warpage.

Means for Solving the Problems

[0005] The present disclosure includes the following. [1] A substrate, A circuit member including a semiconductor chip component mounted on a main surface of the substrate, A resin member provided around the circuit member on the main surface, Comprising, The resin member is a molded body containing a cured product of a curable resin molding material, The cured product of the resin molding material exhibits a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10000 MPa or more and 13000 MPa or less, a semiconductor package. [2] The semiconductor package according to [1], wherein the cured product of the resin molding material exhibits a glass transition temperature of 120°C or higher and 170°C or lower. [3] The semiconductor package according to [1] or [2], wherein the resin molding material is a thermosetting resin composition comprising a thermosetting resin and an inorganic filler. [4] A molded body containing a cured resin molding material, The cured product of the aforementioned resin molding material exhibits a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. Resin components for semiconductor packaging. [5] The resin component for semiconductor packaging according to [4], wherein the cured product of the resin molding material exhibits a glass transition temperature of 130°C or higher and 170°C or lower. [6] The resin component for semiconductor packaging according to [4] or [5], wherein the resin molding material is a thermosetting resin composition comprising a thermosetting resin and an inorganic filler. [7] A resin molding material comprising a thermosetting resin and an inorganic filler, The cured product of the resin molding material exhibits a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. Resin molding material for resin components of semiconductor packages. [8] The resin molding material for resin components of semiconductor packages described in [7], wherein the cured product of the resin molding material exhibits a glass transition temperature of 130°C or higher and 170°C or lower. [Effects of the Invention]

[0006] Regarding semiconductor packages having a resin component which is a molded body containing a cured product of a resin molding material, warping can be further suppressed. [Brief explanation of the drawing]

[0007] [Figure 1] This is a cross-sectional view showing an example of a semiconductor package. [Figure 2] It is a perspective view showing an analysis model of a semiconductor package. [Figure 3] It is an end view showing an analysis model of a semiconductor package. [Figure 4] It is a three-dimensional graph showing the relationship between the predicted value of the warpage amount, the CTE, and the elastic modulus.

Mode for Carrying Out the Invention

[0008] The present invention is not limited to the following examples.

[0009] FIG. 1 is a cross-sectional view showing an example of a semiconductor package. The semiconductor package 100 shown in FIG. 1 includes a substrate 1, a circuit member 20 including semiconductor chip components 21 and 22 mounted on the main surface S1 of the substrate 1, a resin member 5 provided around the circuit member 20 on the main surface S1, and an underfill 8 interposed between the circuit member 20 and the substrate 1.

[0010] The resin member 5 is a molded body including a cured product of a curable resin molding material. The resin member 5 may be a frame-shaped molded body surrounding the entire circuit member 20.

[0011] The cured product of the resin molding material for forming the molded body as the resin member 5 may exhibit a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less. When the linear expansion coefficient of the cured product of the resin molding material is within this range, the occurrence of warpage in the semiconductor package can be suppressed. From the same perspective, the linear expansion coefficient of the cured product of the resin molding material may be 11 ppm / K or more, 12 ppm / K or more, 13 ppm / K or more, 14 ppm / K or more, or 15 ppm / K or more, and may be 19 ppm / K or less, 18 ppm / K or less, 17 ppm / K or less, or 16 ppm / K or less.

[0012] In this specification, the coefficient of linear expansion means the coefficient of linear expansion in the temperature range below the glass transition temperature. For example, in the thermomechanical analysis under the condition of a heating rate of 5°C / min for a test piece of a cured product of a resin molding material, the average coefficient of linear expansion in the range of 30°C to 260°C can be used as the coefficient of linear expansion of the cured product.

[0013] The cured product of the resin molding material for forming the molded body as the resin member 5 may exhibit an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. When the coefficient of linear expansion of the cured product of the resin molding material is within this range, the occurrence of warpage in the semiconductor package can be suppressed. In particular, when the cured product of the resin molding material exhibits an elastic modulus of 10,000 MPa or more and 13,000 MPa or less together with the above-mentioned coefficient of linear expansion, warpage can be more effectively suppressed. In this specification, the elastic modulus means the flexural elastic modulus at 25°C measured by a three-point bending test conforming to JIS K7171.

[0014] The cured product of the resin molding material or the resin member 5 may exhibit a glass transition temperature of 120°C or more and 170°C or less. The glass transition temperature being within this range can also contribute to reducing warpage. From the same perspective, the glass transition temperature of the cured product of the resin molding material or the resin member 5 may be 130°C or more, and may also be 160°C or less, 150°C or less, or 140°C or less. The glass transition temperature here can be a value determined by thermomechanical analysis under the condition of a heating rate of 5°C / min.

[0015] The resin molding material may be a thermosetting resin composition containing a thermosetting resin and an inorganic filler. The thermosetting resin composition may further contain an additive. By appropriately selecting the types and blending ratios of the thermosetting resin, inorganic filler, and additive, the coefficient of linear expansion, elastic modulus, and glass transition temperature of the cured product can be adjusted to be within a predetermined range.

[0016] Thermosetting resins are compounds that form crosslinked polymers by reaction with a curing agent upon heating and / or by self-polymerization, and examples include epoxy resins. A thermosetting resin composition as a resin molding material may further contain a curing agent for the thermosetting resin. Inorganic fillers may include, for example, silica particles. The content of inorganic fillers in the resin molding material (thermosetting resin composition) may be, for example, 65% by mass or more and 85% by mass or 70% by mass or more and 80% by mass or less, based on the mass of the resin molding material (thermosetting resin composition).

[0017] The resin member 5 can be formed using a resin molding material by a conventional molding method such as compression molding. The resin member 5 may be formed before the circuit member 20 is mounted on the substrate 1, or it may be formed after the circuit member 20 is mounted on the substrate 1.

[0018] The substrate 1 is a wiring board having a rectangular main surface S1 and including wiring connected to the circuit member 20, and is sometimes referred to as a package substrate. The substrate 1 may be, for example, a wiring board having a plate-shaped core material including a fiber base material and an insulating resin, and build-up layers including wiring provided on both sides of the core material. The substrate 1 may have connection pads connected to the wiring in the build-up layer. The substrate 1 may have solder resist provided around the electrodes (connection pads). Conductive through-holes penetrating the core material may be provided.

[0019] The thickness of the substrate 1 may be, for example, 0.1 mm or more and 5 mm or less. The length of at least two of the four sides that constitute the rectangular main surface S1 of the substrate 1 may be, for example, 10 mm or more and 300 mm or less.

[0020] In the example shown in Figure 1, the circuit member 20 is a sealing structure having an interposer 3, a plurality of semiconductor chip components 21, 22 provided on the interposer 3, and a sealing layer 4 that seals the semiconductor chip components 21, 22 on the interposer 3. Part or all of the semiconductor chip components 21, 22 are embedded in the sealing layer 4. The semiconductor chip components 21, 22 may be exposed on the side opposite to the substrate 1. The configuration of the circuit member 20 can be arbitrarily changed according to the design, etc. For example, the circuit member 20 may include one or more bare chips and may be semiconductor chip components without a sealing layer.

[0021] The following study examined the relationship between the flexural modulus and coefficient of thermal expansion of resin components and the amount of warpage in a semiconductor package analysis model using three-dimensional structural analysis. Figure 2 is a perspective view showing an analytical model of a semiconductor package, and Figure 3 is an end view of the semiconductor package shown in Figure 2. The semiconductor package 100 shown in Figures 2 and 3 is a 1 / 4 symmetric model and mainly consists of substrates 1A, 1B, chips 2A, 2B, 2C, 2D, an interposer 3, a sealing layer 4, a resin member 5, and an underfill 8. Details of each member are as follows. Substrate 1A, 1B (Size: 100mm x 100mm, Thickness: 1.6mm, Ball 9 Diameter: 600μm, Ball 9 Pitch: 1mm) Tip 2A (Size: 21.9mm x 21.9mm, Thickness: 675μm) Tip 2B (Size: 10mm x 8mm, Thickness: 675μm) Chip 2C (Size: 50mm x 11mm, Thickness: 675μm) 2D chip (Size: 23mm x 4mm, Thickness: 675μm) Interposer 3 (Size: 50mm x 50mm, Thickness: 200μm) Resin component 5 (width Wx, Wy: 25 mm, thickness: 2 mm)

[0022] Table 1 shows the values ​​of the elastic modulus and coefficient of thermal expansion (CTE) used in the three-dimensional structural analysis for chips 2A, 2B, 2C, and 2D, interposer 3, and sealing layer 4. The elastic modulus values ​​in the table are those at 25°C.

[0023] [Table 1]

[0024] Substrates 1A and 1B are 4-2-4 package substrates having a core material containing copper foil, a build-up layer, and a solder resist. The values ​​of the flexural modulus and coefficient of thermal expansion (CTE) used in the three-dimensional structural analysis for substrates 1A and 1B are shown in Table 2. X, Y, and Z in Table 2 correspond to X, Y, and Z in Figure 2.

[0025] [Table 2]

[0026] The parameters for each of the above components, as well as for resin component 5, were set within the range of a flexural modulus of 10,000 to 25,000 MPa, a coefficient of linear expansion of 10 to 20 ppm / K, and a glass transition temperature (Tg) of 120 to 170°C. Three-dimensional structural analysis was then performed at each level using experimental design. In the three-dimensional structural analysis, the stress-free temperature was set to 150°C, which corresponds to the molding temperature of the sealing layer. The temperature was changed in the order of (i) 150°C, (ii) 25°C, (iii) 260°C (reflow temperature), and (iv) 25°C, and the amount of warpage at each temperature was calculated.

[0027] Table 3, Example 1, shows calculation examples for combinations of CTE, Tg, and elastic modulus that exhibit particularly small amounts of warping. Example 2 shows calculation examples for 3D structural analysis when the Tg of the resin member is 180°C.

[0028] [Table 3]

[0029] Based on the results of the 3D structural analysis, the following formula was obtained to predict the amount of warpage after molding from the elastic modulus [MPa], CTE [ppm / K], and Tg [°C] of the resin member. Warpage amount (predicted value, μm) = -53.4939349 +0.0064343682 × modulus of elasticity +9.532361617×CTE -0.054267621×Tg +(elastic modulus - 17265.625) × {(CTE - 14.84375) × 0.001954} +(CTE-14.84375)×{(CTE-14.84375)×1.2693395436} +(modulus of elasticity - 17265.625) × {(Tg - 144.25) × (-0.000082427)} +(CTE-14.84375)×{(Tg-144.25)×(-0.11352)}

[0030] Figure 4 is a three-dimensional graph showing the relationship between the predicted warpage amount calculated from the above formula, CTE, and modulus of elasticity, for the case where the Tg of the resin member is 120°C. It was confirmed that a sufficiently small amount of warpage can be observed when the CTE of the resin member is in the range of 10 to 20 ppm / K and the modulus of elasticity is in the range of 10,000 to 13,000 MPa. [Explanation of Symbols]

[0031] 1, 1A, 1B... Substrate; 2A, 2B, 2C, 2D... Chip; 3... Interposer; 4... Encapsulation layer; 5... Resin component; 8... Underfill; 20... Circuit component; 21, 22... Semiconductor chip component; 100... Semiconductor package.

Claims

1. circuit board and A circuit member including semiconductor chip components is mounted on the main surface of the aforementioned substrate, A resin member provided around the circuit member on the main surface, Equipped with, The resin member is a molded body containing a cured product of a curable resin molding material, A semiconductor package in which the cured product of the resin molding material exhibits a coefficient of linear expansion of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less.

2. The semiconductor package according to claim 1, wherein the cured product of the resin molding material exhibits a glass transition temperature of 120°C or higher and 170°C or lower.

3. The semiconductor package according to claim 1 or 2, wherein the resin molding material is a thermosetting resin composition comprising a thermosetting resin and an inorganic filler.

4. A molded body containing a cured resin molding material, The cured product of the resin molding material exhibits a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. Resin components for semiconductor packaging.

5. The resin component for semiconductor packaging according to claim 4, wherein the cured product of the resin molding material exhibits a glass transition temperature of 130°C or higher and 170°C or lower.

6. The resin component for semiconductor packaging according to claim 4 or 5, wherein the resin molding material is a thermosetting resin composition comprising a thermosetting resin and an inorganic filler.

7. A resin molding material comprising a thermosetting resin and an inorganic filler, The cured product of the resin molding material exhibits a linear expansion coefficient of 10 ppm / K or more and 20 ppm / K or less, and an elastic modulus of 10,000 MPa or more and 13,000 MPa or less. Resin molding material for resin components of semiconductor packages.

8. The resin molding material for a resin component of a semiconductor package according to claim 7, wherein the cured product of the resin molding material exhibits a glass transition temperature of 130°C or more and 170°C or less.

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