Atomic layer deposition using tin- or germanium-based precursors

Abstract

Methods, systems, and devices for atomic layer deposition using tin-based or germanium-based precursors are described. For example, the device can react a first precursor with a base material to form a first compound containing a first element on the base material. The first compound includes at least one element from Group XIII, Group XIV, or Group XV. Furthermore, the device can react a second precursor with the first compound to form a second compound on the base material. The second precursor has the chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety that independently comprises at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin.

Description

[Technical Field]

[0001] cross reference This patent application claims priority to U.S. patent application Ser. No. 18 / 434,588 by Lehn, entitled "ATOMIC LAYER DEPOSITION USING TIN-BASED OR GERMANIUM-BASED PRECURSORS," filed February 6, 2024, and U.S. patent application Ser. No. 63 / 484,728 by Lehn, entitled "ATOMIC LAYER DEPOSITION USING TIN-BASED OR GERMANIUM-BASED PRECURSORS," filed February 13, 2023, each of which is assigned to the assignee of the present patent application, and each of which is expressly incorporated herein by reference in its entirety.

[0002] The following relates to one or more systems for memory that include atomic layer deposition using tin-based or germanium-based precursors. [Background technology]

[0003] Atomic layer deposition (ALD) is a technique used to deposit a film on a first material. For example, performing ALD can include exposing a first material to a first precursor to form a second material on the first material. Further, performing ALD can include exposing a second material to a second precursor, which can react with the second material to leave a third material on the surface of the first material. In some embodiments, the process can be repeated, where a third material is exposed to the first precursor to form another instance of the second material on the third material, and then another instance of the second material is exposed to the second precursor to leave another instance of the third material on the surface of the previously formed instance of the third material.

[0004] In some examples, reactions involved in ALD can occur at a variety of temperatures. However, if such temperatures are outside a predetermined range for a threshold duration, other materials near the material being exposed to ALD may experience changes in physical or chemical properties that exceed the expected threshold. Such changes in physical or chemical properties may adversely affect the operation of an electronic device containing these other materials (e.g., shortening the life of the electronic device, increasing the likelihood that the electronic device will exhibit erroneous behavior, or increasing the likelihood that the electronic device will not operate as intended). For some materials, the temperature required to promote a reaction in ALD (e.g., to form a third material) may exceed a predetermined range of threshold durations. Thus, materials whose reactions can be promoted within a predetermined range or outside a predetermined range for less than a predetermined duration may reduce the likelihood that the operation of the electronic device will be adversely affected. [Brief explanation of the drawings]

[0005] [Figure 1] 1 illustrates an example of an atomic layer deposition (ALD) process that supports atomic layer deposition using tin-based or germanium-based precursors, according to an embodiment disclosed herein. [Figure 2] 1 illustrates an example of a material deposition process that supports atomic layer deposition using tin-based or germanium-based precursors, according to an embodiment disclosed herein. [Figure 3] 1A-1C illustrate examples of electronic devices that support atomic layer deposition using tin-based or germanium-based precursors, according to embodiments disclosed herein. [Figure 4] FIG. 1 illustrates a block diagram of a controller supporting atomic layer deposition using tin-based or germanium-based precursors according to embodiments disclosed herein. [Figure 5] 1 shows a flowchart illustrating method(s) of supporting atomic layer deposition using tin-based or germanium-based precursors, according to embodiments disclosed herein. [Figure 6]1 shows a flowchart illustrating method(s) of supporting atomic layer deposition using tin-based or germanium-based precursors, according to embodiments disclosed herein. DETAILED DESCRIPTION OF THE INVENTION

[0006] In some examples, selenide films can be deposited on materials by performing ALD using silicon-based precursors. However, to form selenide films on materials, the ambient temperature may be set high enough to adversely affect the physical or chemical properties of other materials in the same vicinity as the material. For example, electronic devices may be more likely to behave incorrectly or not perform their intended functions due to changes in the physical or chemical properties of such materials. Therefore, precursors that can form selenide films at lower temperatures may reduce the likelihood that the operation of electronic devices will be adversely affected.

[0007] As described herein, precursors containing germanium or tin (e.g., bis(trimethylgermyl)selenide or bis(trimethylstannyl)selenide) instead of silicon may allow for the formation of selenide films at lower temperatures compared to one or more precursors containing silicon (e.g., bis(trimethylsilyl)selenide) because the reactivity of germanium and tin may be higher than that of silicon. Additionally or alternatively, such precursors may allow for an increased rate of selenide film formation at a given temperature compared to one or more silicon-based precursors. It should be noted that the methods described herein may have similar benefits for tellurium-based films, sulfur-based films, antimony-based films, arsenic-based films, phosphorus-based films, germanium-based films, tin-based films, or any combination thereof.

[0008] In one example of the methods disclosed herein, the method may include reacting a first precursor with a material to form a first compound on the base material, the first compound including at least one of Group XIII, Group XIV, or Group XV elements. Further, the method may include reacting a second precursor with the first compound to form a second compound on the base material, the second precursor including germanium, tin, or silicon.

[0009] Features of the present disclosure are first described in the context of ALD processes and material deposition processes, as described with reference to Figures 1 and 2. Features of the present disclosure are then described in the context of electronic devices, as described with reference to Figure 3. These and other features of the present disclosure are further shown and described with reference to apparatus diagrams and flow charts for atomic layer deposition using tin-based or germanium-based precursors, as described with reference to Figures 4-6.

[0010] FIG. 1 illustrates an example of an ALD process 100 that supports atomic layer deposition using tin-based or germanium-based precursors according to an embodiment disclosed herein.

[0011] As shown in stage 101-a, a base material 105 may be exposed to a first precursor 110. For example, the base material 105 may be placed in a reactor (e.g., a deposition chamber) into which the vapor phase of the first precursor 110 may be introduced. Exposing the base material to the first precursor may allow a first compound 115 to form on the surface of the base material 105, as shown in stage 101-b. In some embodiments, a by-product 130-a is formed as a result of the reaction between the base material 105 and the first precursor 110. After forming the first compound 115, the by-product 130-a may be formed. In that case, the by-product 130-a and / or a portion of the first precursor 110 may be purged (e.g., removed from the reactor) in stage 102-a before proceeding to stage 101-b. In some embodiments, the temperature of the reactor may be set or adjusted to a first predetermined value such that the first compound 115 forms on the surface of the base material 105. In some examples, the base material may be a substrate. In some examples, exposing a material to a precursor may refer to adding the precursor to a reactor in which the material is placed, and reacting a material with a precursor may refer to a chemical reaction that occurs between the precursor and the material, and may include setting or adjusting the temperature of the reactor to a particular temperature that promotes the reaction.

[0012] After forming the first compound 115 in stage 101-a, the first compound 115 can be exposed to a second precursor 120 in stage 101-b. For example, the vapor phase of the second precursor 120 can be introduced into the reactor and exposed to the surface of the first compound 115. In some embodiments, the base material 105 can be transported to a second reactor to introduce the second precursor 120. In other examples, the same reactor can be used. As shown in stage 101-b, the second precursor 120 can react with the first compound 115 to form a second compound 125. In some embodiments, a by-product 130-b is formed as a result of the reaction between the first compound 115 and the second precursor 120. After forming the second compound 125, the by-product 130-b and / or at least a portion of the second precursor 120 can be purged (e.g., removed from the reactor) in stage 102-b before proceeding to stage 101-c. In some examples, the temperature of the reactor can be set or adjusted to a second predetermined value such that the second compound 125 forms on the surface of the base material 105 .

[0013] After forming the second compound 125 in stage 101-b, the second compound 125 can be exposed to the first precursor 110 in stage 101-c. For example, the vapor phase of the first precursor 110 can be introduced into a reactor and exposed to the surface of the second compound 125. In some examples, the base material 105 can be transported to a third reactor to introduce the first precursor 110. In other examples, the same reactor used for one or both of stages 101-a and 101-b can be used for stage 101-c. The first precursor 110 can react with the second compound 125 to form a second instance of the first compound 115 on top of the second compound 125. In some examples, a by-product 130-c is formed as a result of the reaction between the second compound 125 and the first precursor 110. After forming the second instance of the first compound 115, the by-product 130-c and / or at least a portion of the first precursor 110 may be purged (e.g., removed from the reactor) in stage 102-c before returning to stage 101-b. In some embodiments, the temperature of the reactor may be set or adjusted to a first predetermined value or a third predetermined value such that the first compound 115 forms on the surface of the base material 105. In some embodiments, the first precursor 110 and the second precursor 120 may be delivered to the reactor (e.g., multiple reactors) using an inert gas (e.g., argon, helium, nitrogen). Additionally or alternatively, the by-products 130-a, 130-b, and / or 130-c may be purged using an inert gas (e.g., argon, helium, nitrogen).

[0014] In some examples, this process can be repeated to deposit multiple layers of second compound 125. For example, after depositing a first instance of second compound 125, the first instance of second compound 125 can be exposed to first precursor 110 to form a second instance of first compound 115 on the surface of the first instance of second compound 125. The second instance of first compound 115 can then be exposed to second precursor 120 to form a second instance of second compound 125 on the surface of the first instance of second compound 125.

[0015] In some examples, first precursor 110 and first compound 115 can include an element from Group XIII, Group XIV, or Group XV (e.g., germanium, arsenic, tin), and second precursor 120 can include at least one of germanium, tin, or silicon. For example, second precursor 120 can have the formula BC(1)-D(1), or BC(1)-C(1)-D(1), or BC(2)-D(1)D(2), or BD(3)-C(2)-C(2)-D(1)D(2), or BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), where B is a first moiety and D(1), D(2), D(3), D(4), and D(5) are additional moieties, and B and D(1), D(2), D(3), D(4), and D(5) each independently comprise at least one of germanium, tin, or silicon. In some embodiments, C(1) can be one of tellurium, sulfur, or selenium. In some examples, C(2) can be one of antimony, arsenic, and phosphorus. In some examples, C(3) can be one of silicon, germanium, or tin.

[0016] In some examples, base material 105 can be a structure on a substrate (e.g., a wafer). In some such examples, base material 105 can span a first direction and a second direction, where the first direction is orthogonal to the second direction. Furthermore, a memory device including base material 105 can include word lines extending along the first direction and / or the second direction, and bit lines extending along a third direction orthogonal to the first direction and the second direction. In some such examples, a deposited layer of material (e.g., a sequence of materials) can be formed in one or more recesses of the word lines, where the deposited layer can extend along the first direction and / or the second direction, and the sequence of materials can include memory cells (e.g., chalcogenide elements). In some examples, techniques described herein can be used to form compounds on base material 105, word lines, bit lines, deposited layers, or any combination thereof.

[0017] FIG. 2 illustrates an example material deposition process 200 that supports atomic layer deposition using tin-based or germanium-based precursors according to examples disclosed herein.

[0018] Referring to FIG. 2 , layer 210 can be exposed to first precursor 205. The first precursor can include, for example, at least one of Group XIII, Group XIV, or Group XV elements. In some examples, first precursor 205 reacting with layer 210 can form by-product 225-a, which can be removed from the reactor. After forming first compound 220, first compound 220 can be exposed to second precursor 215, which can include at least one of germanium, tin, silicon, tellurium, sulfur, antimony, arsenic, phosphorus, or selenium. Second precursor 215 can react with first compound 220 to form second compound 230. In some examples, second precursor 215 can form a layer on first compound 220, which can react with first compound 220 to form second compound 230. In other examples, the second precursor 215 can react directly with the first compound 220 to form the second compound 230. This reaction may produce a by-product 225, which can be removed from the reactor.

[0019] In some examples, the second compound 230 can be exposed to the first precursor 205 to form a second instance of the first compound on the second compound 230. In some examples, the first precursor can form a layer on the second compound 230, which can react with the second compound 230 to form a second instance of the first compound. In other examples, the first precursor 205 can react directly with the second compound 230 to form a second instance of the first compound. This reaction may produce a by-product 225-c, which can be removed from the reactor. Without departing from the scope of the present disclosure, the second instance of the first compound can instead be a third compound different from the first compound. In some examples, this process can be repeated to deposit multiple layers of the second compound 230. For example, the process may be repeated once more, where the second instance of the first compound serves as the illustrated first compound 220 and the second compound 230 serves as layer 210. In some embodiments, the first precursor 205 and the second precursor 215 can be delivered to the reactor(s) using an inert gas (e.g., argon, helium, nitrogen). Additionally or alternatively, the by-products 225-a, 225-b, and / or 225-c can be purged using an inert gas (e.g., argon, helium, nitrogen).

[0020] In some embodiments, the first precursor 205 can include at least one of Group XIII, Group XIV, or Group XV elements. Examples of Group XIII elements can include boron, aluminum, gallium, indium, and thallium. Examples of Group XIV elements can include carbon, silicon, germanium, tin, and lead, and examples of Group XV elements can include nitrogen, phosphorus, arsenic, antimony, and bismuth. An example of a first precursor can include Ge(OEt)4, where "Ge" corresponds to germanium, "O" corresponds to oxygen, and "Et" corresponds to ethyl. Another example of a first precursor can include As(OEt)3, where "As" corresponds to arsenic, "O" corresponds to oxygen, and "Et" corresponds to ethyl. Another example of a first precursor can be SbCl3, where "Sb" corresponds to antimony, and "Cl" corresponds to chlorine. Another example of the first precursor may be GeCl4, where "Ge" corresponds to germanium and "Cl" corresponds to chlorine.

[0021] In some examples, C(1) may be tellurium, sulfur, or selenium; B may be defined by the formula R1R2R3A, where A is at least one of germanium, tin, or silicon; D(1) may be defined by the formula XR4R5R6, where X is at least one of germanium, tin, or silicon; and each of R1, R2, R3, R4, R5, or R6 may be independently selected from hydrogen (or deuterium), an alkyl group, an aryl group, an alkoxy group, an alkyl sulfide, an alkyl selenide, a halide, or an alkyl telluride. Additionally or alternatively, each of R1, R2, R3, R4, R5, or R6 may be independently selected from cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, isofulminate; an amide containing two substituents that may be selected from alkyl, silyl (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); or a hydrazide containing three substituents that may be selected from alkyl, silyl (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). Additionally or alternatively, each of R, R, R, R, R, or R can be independently selected from a -SiRaBbRc moiety, a -GeRaBbRc moiety, a -SnRaBbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or more generally, a moiety comprising a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, such that each atom of the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, is fully saturated with a respective substituent, such that each of these (carbon, silicon, germanium, or tin) atoms has four bonds.This bond may be either to another (carbon, silicon, germanium, or tin) atom of the set, or to a corresponding substituent represented as Ra-Rx (substituents may be indexed as a, b, c..., x, where x is some index different from a). In some such examples, up to 10 carbon, silicon, germanium, or tin atoms may be included in the set that are distinct from any of the carbon, silicon, germanium, or tin atoms of the Ra-Rx substituents. In addition, the carbon, silicon, germanium, tin atoms, or any combination thereof, of the set may be linear, branched, or cyclic. In some examples, R through R can be independently selected from hydrogen (or deuterium), an alkyl group, an aryl group, an alkoxy group, an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, an isofulminate; an amide containing two substituents that can be selected from among an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); or a hydrazide containing three substituents that can be selected from among an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). In some embodiments, R1, R2, R3, R4, R5, and R6 are each the same element or compound. In embodiments where B is defined by the formula R1R2R3A, D(1) is defined by the formula XR4R5R6, and each of A and X is at least one of germanium, tin, or silicon, second precursor 215 may have the following form: [ka]

[0022] In some embodiments, C(2) may be arsenic, phosphorus, or antimony; B may be defined by the formula R1R2R3A, where A is at least one of germanium, tin, or silicon; D(1), D(2), and D(3) may be defined by the formula X1R4R5R6, X2R7R8R9, X3R10R11R12, where each of X1, X2, and X3 is at least one of germanium, tin, or silicon; and each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, or R12 may be independently selected from hydrogen (or deuterium), an alkyl group, an aryl group, an alkoxy group, an alkyl sulfide, an alkyl selenide, a halide, or an alkyl telluride. Additionally or alternatively, each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, or R12 may be independently selected from a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, an isofulminate, an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); or a hydrazide containing three substituents selected from an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). Additionally or alternatively, each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, or R12 may be independently selected from a -SiRaBbRc moiety, a -GeRaBbRc moiety, a -SnRaBbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or more generally, a moiety comprising the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof.For example, each atom of a set of carbon, silicon, germanium, tin, or any combination thereof is fully saturated with a respective substituent, such that each of these (carbon, silicon, germanium, or tin) atoms has four bonds. The bonds may be either to other (carbon, silicon, germanium, or tin) atoms in the set or to corresponding substituents represented as R-R (substituents may be indexed as a, b, c, ..., x, where x is any index different from a). In some such examples, the set may include up to 10 carbon, silicon, germanium, or tin atoms that are distinct from any of the carbon, silicon, germanium, or tin atoms of the R-R substituents. Additionally, the carbon, silicon, germanium, tin, or any combination thereof in the set may be linear, branched, or cyclic. In some examples, R through R can be independently selected from hydrogen (or deuterium), an alkyl group, an aryl group, an alkoxy group, an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, an isofulminate; an amide containing two substituents that can be selected from among an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); or a hydrazide containing three substituents that can be selected from among an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). In some embodiments, each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 is the same element or the same compound.In embodiments where B is defined by the formula R1R2R3A, D(1), D(2), and D(3) are defined by the formulas X1R4R5R6, X2R7R8R9, X3R10R11R12, and each of A, X1, X2, and X3 is at least one of germanium, tin, or silicon, the second precursor 215 may have the following form: [ka]

[0023] In some examples, C(3) can be germanium or tin, and B can be defined by the formula R1R2R3A. A is at least one of germanium, tin, or silicon; and D(1), D(2), D(3), D(4), and D(5) can be defined by the formula X1R4R5R6, X2R7R8R9, X3R10R11R12, X4R13R14R15, X5R16R17R18, where each of X1, X2, X3, X4, and X5 is at least one of germanium, tin, or silicon; and each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, or R18 is hydrogen (or deuterium), an alkyl group, an aryl group, an alkoxy group, or an alkoxy group. an amide containing two substituents that may be selected from alkyl, silyl (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); or a hydrazide containing three substituents that may be selected from alkyl, silyl (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). Additionally or alternatively, each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, or R18 may be independently selected from cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, or isofulminate.Additionally or alternatively, each of R, R, R, R, R, R, R, R, R, R, R, R, R, R, R, R, R, R, R, R, R, or R can be independently selected from a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or more generally, a moiety comprising a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof. For example, each atom of the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is fully saturated with a respective substituent, such that each of these (carbon, silicon, germanium, or tin) atoms has four bonds. This bond may be either to another (carbon, silicon, germanium, or tin) atom of the set, or to a corresponding substituent represented as Ra-Rx (substituents may be indexed as a, b, c..., x, where x is some index different from a). In some such examples, the set may include up to 10 carbon, silicon, germanium, or tin atoms that are distinct from any of the carbon, silicon, germanium, or tin atoms of the Ra-Rx substituents. In addition, the carbon, silicon, germanium, tin atoms, or any combination thereof, of the set may be linear, branched, or cyclic.In some examples, R to R can be independently selected from hydrogen (or deuterium), an alkyl group, an aryl group, an alkoxy group, an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, an isofulminate; an amide containing two substituents that can be selected from an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); or a hydrazide containing three substituents that can be selected from an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). In some embodiments, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, and R18 are each the same element or the same compound. In embodiments where B is defined by the formula R1R2R3A and D(1), D(2), D(3), D(4), and D(5) are defined by the formula X1R4R5R6, X2R7R8R9, X3R10R11R12, X4R13R14R15, X5R16R17R18, where each of A, X1, X2, X3, X4, and X5 is at least one of germanium, tin, or silicon, second precursor 215 can have the following form: [ka]

[0024] In one example, first precursor 205 may have the formula Ge(OEt)4 and second precursor 215 may have the formula R1R2R3A-Se-ZR4R5R6, where "Ge" may refer to germanium, "O" may refer to oxygen, "Et" may refer to ethyl, and "Se" may refer to selenium. In some such examples, second compound 230 may be GeSe2, and by-product 225 may be EtO-AR1R2R3 and EtO-ZR4R5R6. Such a reaction may be represented by the formula 2R1R2R3A-Se-ZR4R5R6 + Ge(OEt)4 → GeSe2(deposition) + 2EtO-AR1R2R3(volatility) + 2EtO-ZR4R5R6(volatility).

[0025] In another example, first precursor 205 may have the formula As(OEt)3 and second precursor 215 may have the formula R1R2R3A-Se-XR4R5R6, where "As" may refer to germanium, "O" may refer to oxygen, "Et" may refer to ethyl, and "Se" may refer to selenium. In some such examples, second compound 230 may be As2Se3, and by-products 225 may be EtO-AR1R2R3 and EtO-ZR4R5R6. Such a reaction may be represented by the formula 3RR2R3A-Se-XR4R5R6 + 2As(OEt)3 → As2Se3 (deposited) + 3EtO-AR1R2R3 (volatile) + 3EtO-XR4R5R6 (volatile).

[0026] In another example, first precursor 205 may have the formula SbCl3 and second precursor 215 may have the formula R1R2R3A-Sb-(X1R4R5R6)(X2R7R8R9), where "Sb" may refer to antimony and "Cl" may refer to chlorine. In some such examples, second compound 230 may be Sb, and by-products 225 may be Cl-AR1R2R3, Cl-X1R4R5R6, and Cl-X2R7R8R9. Such a reaction may be represented by the formula R1R2R3A-Sb-(X1R4R5R6)(X2R7R8R9) + SbCl3 → 2Sb(deposited) + Cl-AR1R2R3(volatile) + Cl-X1R4R5R6(volatile) + Cl-X2R7R8R9(volatile).

[0027] In another example, first precursor 205 may have the formula ClGe-GeCl and second precursor 215 may have the formula RRR-Se-(XRR), where "Se" may refer to selenium and "Cl" may refer to chlorine. In some such examples, second compound 230 may be GeSe and by-products 225 may be Cl-ARR- and Cl-XRR. Such a reaction may be represented by the formula 3RR-Se-(XRR) + 2ClGe-GeCl → 2GeSe(deposited) + 3Cl-ARR-(volatile) + 3Cl-XRR-(volatile).

[0028] In another example, first precursor 205 may be a germanium(II) amidinate (or other germanium(II) compound) with the formula Ge(AMD), and second precursor 215 may have the formula RRR-Se-(XRR), where "Se" refers to selenium and "AMD" refers to the amidinate ligand. In some such examples, second compound 230 may be GeSe, and by-product 225 may be AMD-ARR, AMD-XRR. Such a reaction may be represented by the formula RRR-Se-(XRR) + Ge(AMD) → GeSe(deposited) + AMD-ARR(volatile) + AMD-XRR(volatile).

[0029] In another example, first precursor 205 may have the formula GeCl4 and second precursor 215 may have the formula R1R2R3A-Ge-(X1R4R5R6)(X2R7R8R9)(X3R10R11R12), where "Ge" may refer to germanium and "Cl" may refer to chlorine. In some such examples, second compound 230 may be Ge, and by-products 225 may be Cl-AR1R2R3, Cl-X1R4R5R6, Cl-X2R7R8R9, and Cl-X3R10R11R12. Such a reaction may be represented by the equation R1R2R3A-Ge-(X1R4R5R6)(X2R7R8R9)(X3R10R11R12) + GeCl4 → 2Ge(deposited) + Cl-AR1R2R3(volatile) + Cl-X1R4R5R6(volatile) + Cl-X2R7R8R9(volatile) + Cl-X3R10R11R12(volatile).

[0030] In some examples, the term "alkyl" can refer to a saturated, unsaturated, straight-chain, branched, or cyclic hydrocarbon chain containing from 1 carbon atom (e.g., C1) to 10 carbon atoms (e.g., C10).

[0031] In some embodiments, "methyl" may refer to a compound having the formula CH, where "C" may refer to carbon and "H" may refer to hydrogen. In some embodiments, "ethyl" may refer to a compound having the formula CHCH. In some embodiments, "propyl" may refer to a compound having the formula CHCHCH. In some embodiments, "isopropyl" may refer to a compound having the formula CH(CH). In some embodiments, an alkyl group may refer to a compound having the formula CH, where n is an integer greater than or equal to 1. In some embodiments, sulfide may refer to an inorganic anion of sulfur, selenide may refer to an inorganic anion of selenium, and telluride may refer to an inorganic anion of tellurium. In some embodiments, dialkylamide may refer to an amide group having two alkyl groups.

[0032] In some embodiments, methoxy may refer to a methyl group bonded to an oxygen. In some embodiments, ethoxy may refer to an ethyl group bonded to an oxygen. Dimethylamino may be a moiety having the formula N(CH3)2, where "C" may refer to carbon, "H" may refer to hydrogen, and "N" may refer to nitrogen. In some embodiments, diethylamino may be a moiety having the formula N(CH2CH3)2. In some embodiments, ethylmethylamino may be a moiety having the formula N(CH2CH3)(CH3).

[0033] In some examples, an alkyl group may refer to a compound having the formula CH(2n+1), where n is an integer equal to or greater than 1. In some examples, an alkyl sulfide may refer to a -SR moiety, where R is an alkyl group. An alkyl selenide may refer to a -SeR moiety, where R is an alkyl group. An alkyl telluride may refer to a -TeR moiety, where R is an alkyl group. In some examples, a dialkylamide may refer to an amide moiety having two alkyl groups, such as -NR'R", where R' and R" are alkyl groups.

[0034] In some examples, methods or aspects of methods described herein may be performed using chemical vapor deposition (CVD). For example, first precursor 205 may be deposited using CVD, a second precursor may be reacted with first compound 220 by methods described herein, first compound 220 may be formed using first precursor 205 by methods described herein, second precursor 215 may be deposited on first compound 220 using CVD, or both first precursor 205 and second precursor 215 may be deposited using CVD.

[0035] "Independently comprising a set of elements and / or compounds" or "independently selected from a set of elements and / or compounds" can refer to the property that an initial element or compound can be substituted for another while still producing a precursor that can be used to form a compound on the surface of the material.

[0036] It should be noted that there may be instances in which the second precursor 215 reacts with the layer 210 to form a third compound. In some such examples, the first precursor 205 may react with the third compound to form a fourth compound. This process may be repeated to form multiple layers of selenide-based films, tellurium-based films, sulfur-based films, antimony-based films, arsenic-based films, phosphorus-based films, germanium-based films, tin-based films, or any combination thereof.

[0037] The second compound 230 can be formed by sequentially introducing and reacting the first precursor 205 and the second precursor 215 (i.e., in the order ABAB...), although the precursors can be introduced in a different order (e.g., a BABA... sequence, an AABAAB... sequence, or an ABBABB sequence) depending on the composition of the second compound 230. For example, the first precursor 205 can be introduced, followed by the second precursor 215. Depending on the composition of the second compound 230, multiple introductions (e.g., pulses) of the first precursor 205 or the second precursor 215 can be made, followed by the second precursor 215 or the first precursor 205, respectively.

[0038] In some examples, a first molecule for the first precursor 205 (i.e., precursor 1-a) and a second molecule for the second precursor 215 (i.e., precursor 2-a) may be repeatedly introduced in one or more cycles (e.g., AA times or AA cycles, where AA is a positive integer). After the repeated introduction of precursor 1-a and precursor 2-a over multiple cycles, a third molecule of the first precursor 205 (i.e., precursor 1-b) and a fourth molecule of the second precursor (i.e., precursor 2-b) may be repeatedly introduced in one or more cycles (e.g., BB times or BB cycles, where BB is a positive integer). This process may continue for multiple other precursors up to a predetermined amount (e.g., CC times or CC cycles for precursors 1-c and 2-c, DD times or DD cycles for precursors 1-d and 2-d, etc., up to XX times or XX cycles for precursors 1-x and 2-x, where CC, DD, and XX are all positive integers). After this process continues for a predefined amount, the process may be repeated (e.g., precursors 1-a and 2-a may again be used AA times or cycles). Note that each of the molecules used as precursors in each cycle may be selected from the same molecules for different cycles or different molecules than those described herein for first precursor 205 and second precursor 215.

[0039] In some such examples, a third precursor can be reacted with the layer of second compound 230 to form another compound on the layer of second compound 230. Additionally, a fourth precursor can be reacted with another compound to form a second layer of material on the layer of second compound 230. In some such examples, a set of X precursor pairs can be identified, each precursor pair in the set of X precursor pairs including one of the precursors in the first set and one of the precursors in the second set, each precursor pair having an associated cycle amount. X is an integer greater than or equal to 2, and each precursor in the second set of precursors has a form given by the formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), where each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety that independently comprises at least one of germanium, tin, or silicon, C(1) comprises tellurium, sulfur, or selenium, C(2) comprises antimony, arsenic, and phosphorus, and C(3) comprises silicon, germanium, or tin. In particular, the moieties represented by B, D(1), D(2), D(3), D(4), D(5), or any combination, can be different for different precursors in the second set of precursors, and the elements comprised by C(1), C(2), and C(3) can be different for different precursors in the second set of precursors. Further, according to the cycle number associated with each precursor pair in the set of X precursor pairs, one of the precursors in the first set can be reacted to form a respective compound, and one of the precursors in the second set can be reacted with a respective compound to form one or more layers, to form a respective film associated with the precursor pair.

[0040] The methods described herein may have one or more advantages. For example, using germanium and / or tin in first precursor 205 may allow the reaction (e.g., formation of first compound 220 and / or formation of second compound 230) to occur at a lower temperature compared to precursors that do not contain germanium and / or tin (e.g., trimethylsilyl precursors). Additionally or alternatively, using germanium and / or tin in first precursor 205 may allow for more rapid deposition at a given temperature compared to precursors that do not contain germanium and / or tin.

[0041] 3 illustrates an example of an electronic device 300 that supports atomic layer deposition using tin-based or germanium-based precursors, according to embodiments disclosed herein. The electronic device 300 can include a base material 305 having one or more features 310 (e.g., pillars, deposition layers), and the base material 305 and one or more features 310 can be covered with a material 315. Each feature 310 can include materials 320, 325, 330, 335, and 340, each of which can be an example of a chalcogenide material, an organic (e.g., carbon) material, a carbon allotrope (e.g., graphite), a reactive metal (e.g., tungsten, aluminum, or tantalum), a heat-sensitive material, an oxidation-sensitive material, or any combination thereof. Some of the materials 320, 325, 330, 335, and 340 can be examples of other materials. In some examples, base material 305, or the combination of base material 305 and one or more features 310, may be an example of base material 105 described with reference to Figure 1 or an example of layer 210 described with reference to Figure 2. Additionally or alternatively, material 315 may be an example of second compound 125 described with reference to Figure 1 or an example of second compound 20 described with reference to Figure 2.

[0042] While FIG. 3 shows feature 310 including five materials, each feature may be made of a single material, two or more materials, or five materials. Features may be separated from one another by openings 322. The materials of feature 310 may be formed adjacent to (e.g., on) base material 305 using techniques such as photolithography, physical vapor deposition (PVD), chemical vapor deposition (CVD), or ALD. In some embodiments, base material 305 may include one or more materials, layers, structures, or regions thereon. Feature 310 may be considered a high aspect ratio (HAR) feature, where HAR may correspond, for example, to an aspect ratio of 10:1 or greater, a 20:1 aspect ratio or greater, a 25:1 aspect ratio or greater, or a 50:1 aspect ratio or greater. In some embodiments, material 315 may be formed in either base material 305 or one or more features 310, but not both. Additionally or alternatively, material 315 may be formed as material within each of one or more features 310. Additionally or alternatively, material 315 may be formed on planar material or on low aspect ratio features of an electronic device.

[0043] Material 315 can be formed on feature 310 according to embodiments described herein. For example, material 315 can be formed by sequentially exposing feature 310 of electronic device 300 to a first precursor (e.g., first precursor 205) and a second precursor (e.g., second precursor 215) as described herein. Material 315 can function as a conductive component of electronic device 300, such as a transistor, a capacitor, an electrode, an etch stop material, a gate, a barrier material, or a spacer material. One or more materials and / or structures, such as a gate, can then be formed within opening 322 by techniques such as photolithography, PVD, CVD, or ALD and / or additional processes performed to form a complete electronic device including electronic device 300.

[0044] Material 315 can be conformally formed on feature 310 according to embodiments described herein. For example, the thickness of material 315 on the sidewalls of feature 310 can be substantially uniform. For example, material 315 can be formed to a thickness ranging from a monolayer to 100 nm. Alternatively, material 315 can be formed to a greater thickness. Material 315 can be in direct contact with each material of feature 310 or with some materials of feature 310. Additionally or alternatively, material 315 can be in contact with base material 305.

[0045] In some examples, base material 305 may be a structure on a substrate (e.g., a wafer). In some such embodiments, base material 305 may span a first direction and a second direction, where the first direction is orthogonal to the second direction. Furthermore, a memory device including base material 305 may include word lines extending along the first direction and / or the second direction, and bit lines extending along a third direction orthogonal to the first direction and the second direction. In some such embodiments, a deposited layer of material (e.g., a sequence of materials, such as deposited layer 310) may be formed in one or more recesses of the word lines, where the deposited layer may extend along the first direction and / or the second direction, and the sequence of materials may include memory cells (e.g., chalcogenide elements). In some embodiments, the stacks may each be coupled to one word line and one bit line. In some embodiments, techniques described herein may be used to form a carbon layer on base material 305, the word lines, the bit lines, the deposited layer, or any combination thereof.

[0046] FIG. 4 illustrates a block diagram 400 of a controller 420 supporting atomic layer deposition using tin-based or germanium-based precursors, according to embodiments disclosed herein. The controller 420 may be an example of an embodiment of the controller described with reference to FIGS. 1-3. The controller 420, or various components thereof, may be examples of means for performing various embodiments of atomic layer deposition using tin-based or germanium-based precursors, as described herein. For example, the controller 420 may include a reaction element 425, a formation element 430, an exposure element 435, or any combination thereof. Each of these components may be in direct or indirect communication with each other (e.g., via one or more buses).

[0047] Reactive element 425 can be configured or otherwise supportive of reacting a first precursor with a base material to form a first compound on the base material, the first compound including a first element. The first compound includes at least one of Group XIII, Group XIV, or Group XV elements. In some embodiments, reactive element 425 can be configured or otherwise supportive of reacting a second precursor with the first compound to form a second compound on the base material. The second precursor has the chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is independently a respective moiety comprising at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin.

[0048] In some embodiments, reactive element 425 can be configured or otherwise supportive of reacting a third precursor with a second compound to form a third compound on the second compound. The third precursor includes at least one of a Group XIII, Group XIV, or Group XV element. In some embodiments, reactive element 425 can be configured or otherwise supportive of reacting a fourth precursor with a third compound to form a fourth compound on the second compound. The fourth precursor includes one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first portion and a second portion, and the first portion and the second portion independently include at least one of germanium, tin, or silicon.

[0049] In some examples, reactive element 425 can be configured with or otherwise support a means for identifying a set of X precursor pairs, where each precursor pair of the set of X precursor pairs includes one of a first set of precursors and one of a second set of precursors, where each precursor pair has an associated cycle number, X is an integer greater than or equal to 2, each precursor of the first set of precursors includes an element of Group XIII, Group XIV, or Group XV, and each precursor of the second set of precursors includes one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with two or more moieties, each of the two or more moieties independently including germanium, tin, or silicon. In some examples, the reaction element 425 can react one precursor from a first set of precursors to form a respective first compound and one precursor from a second set of precursors with the first compound to form a respective second compound to form a respective film associated with each precursor pair in accordance with the number of cycles associated with each precursor pair in the set of X precursor pairs.

[0050] In some embodiments, B has the formula R1R2R3A. In some embodiments, A comprises at least one of the germanium, tin, or silicon of B. In some embodiments, each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents that may be selected from among an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); a hydrazide, an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate containing three substituents that may be selected from among an alkyl substituent, a silyl substituent (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). the Rb, Rc, Rd, Re, ..., Rx is a substituted or unsubstituted aryl group selected from the group consisting of 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with a respective substituent, Ra, Rb, Rc, Rd, Re, ..., Rx, and 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, which are different from any carbon, silicon, germanium, or tin atom in a respective substituent, Ra, Rb, Rc, Rd, Re, ..., Rx.x in Rx is an index different from a in Ra, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); an alkyl substituent, a silyl substituent, and a hydrazide, alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellocyanate, azide, fulminate, or isofulminate, each of which may contain three substituents that may be selected from a substituent (e.g., a silyl group having hydrogen, deuterium, or alkyl substituents), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or alkyl substituents).

[0051] In some embodiments, each of R1, R2, and R3 comprises the same element or compound.

[0052] In some embodiments, D(1) has the formula X1R4R5R6, D(2) has the formula X2R7R8R9, D(3) has the formula X3R10R11R12, D(4) has the formula X4R13R14R15, and D(5) has the formula X5R16R17R18, or any combination thereof, where each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon. wherein each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, is selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); a hydrazide containing three substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, an alkyl aryl group ... a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or each of the substituents Ra and R b, Rc, Rd, Re, ..., Rx, each of which comprises a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, that are each fully saturated with R, Rb, Rc, Rd, Re, ..., Rx, and which comprises 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, that are different from any carbon, silicon, germanium, or tin in each of the substituents R, Rb, Rc, Rd, Re, ..., Rx.wherein x in Rx is an index different from a in Ra; wherein the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is linear, branched, or cyclic; wherein Ra, Rb, Rc, Rd, Re, ..., Rx are amides, alkyl substituents, silyl substituents (e.g., silyl groups having hydrogen, deuterium, or alkyl substituents), or germyl substituents (e.g., germyl groups having hydrogen, deuterium, or alkyl substituents) containing two substituents which may be selected from among amides, alkyl substituents, silyl groups, alkoxy groups, amides, silyl groups, silyl groups, silyl groups having hydrogen, deuterium, or alkyl substituents, and germyl groups having hydrogen, deuterium, or alkyl substituents. and a silyl group having three substituents, which may be selected from silyl (e.g., a silyl group having hydrogen, deuterium, or alkyl substituents), germyl (e.g., a germyl group having hydrogen, deuterium, or alkyl substituents), hydrazide, alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellocyanate, azide, fulminate, or isofulminate.

[0053] In some embodiments, each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, comprises the same element or compound.

[0054] The formation element 430 may be configured as or otherwise support a means for forming a deposited layer of multiple materials on a substrate. The exposure element 435 may be configured as or otherwise support a means for exposing the deposited layer of multiple materials to a first precursor to form a first compound including a first element on the deposited layer of multiple materials. The first compound includes at least one of an element from Group XIII, Group XIV, or Group XV. In some embodiments, the exposure element 435 may be configured as or otherwise support a means for exposing the deposited layer of multiple materials to a second precursor to form a second compound on the deposited layer of multiple materials. The second precursor has the chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is independently a respective moiety comprising at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin.

[0055] In some embodiments, the exposure element 435 can be configured as or otherwise support a means for exposing a second compound to a third precursor to form a third compound on the deposited layer of a plurality of materials. The third precursor includes at least one of Group XIII, Group XIV, or Group XV elements. In some embodiments, the exposure element 435 can be configured as or otherwise support a means for exposing the third compound to a fourth precursor to form a fourth compound on the second compound. The fourth precursor includes tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first portion and a second portion, the first portion and the second portion independently including at least one of germanium, tin, or silicon.

[0056] In some examples, exposure element 435 can be configured as or otherwise support a means for identifying a set of X precursors, where each precursor pair of the set of X precursor pairs includes one of a first set of precursors and one of a second set of precursors, each precursor pair having an associated cycle number, X being an integer greater than or equal to 2, each precursor of the first set of precursors including at least one element of Group XIII, Group XIV, or Group XV, and each precursor of the second set of precursors including one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with two or more moieties, each of the two or more moieties independently including germanium, tin, or silicon. In some examples, the exposing component can be configured as or otherwise support a means for exposing each precursor pair of a set of X precursor pairs to one of a first set of precursors to form a respective first compound, and further exposing each first compound to one of a second set of precursors to form a respective second compound, in response to a number of cycles associated with each precursor pair of the set of X precursor pairs, to form a respective film associated with the precursor pair.

[0057] In some embodiments, B has the formula R1R2R3A. In some embodiments, A includes at least one of germanium, tin, or silicon. In some embodiments, each of R1, R2, and R3 is independently selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents that may be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); a hydrazide, alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate containing three substituents that may be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent). the Rb, Rc, Rd, Re, ..., Rx is a substituted or unsubstituted aryl group selected from the group consisting of 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with a respective substituent, Ra, Rb, Rc, Rd, Re, ..., Rx, and 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, which are different from any carbon, silicon, germanium, or tin atom in a respective substituent, Ra, Rb, Rc, Rd, Re, ..., Rx.x in Rx is an index different from a in Ra, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); an alkyl substituent, a silyl substituent, and a hydrazide, alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellocyanate, azide, fulminate, or isofulminate, each of which may contain three substituents that may be selected from a substituent (e.g., a silyl group having hydrogen, deuterium, or alkyl substituents), or a germyl substituent (e.g., a germyl group having hydrogen, deuterium, or alkyl substituents).

[0058] In some embodiments, each of R1, R2, and R3 comprises the same element or compound.

[0059] In some embodiments, D(1) has the formula X1R4R5R6, D(2) has the formula X2R7R8R9, D(3) has the formula X3R10R11R12, D(4) has the formula X4R13R14R15, and D(5) has the formula X5R16R17R18, or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon. wherein each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, is selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); a hydrazide containing three substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, an alkyl aryl group ... a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or each of the substituents Ra and R b, Rc, Rd, Re, ..., Rx, each of which comprises a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, that are each fully saturated with R, Rb, Rc, Rd, Re, ..., Rx, and which comprises 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, that are different from any carbon, silicon, germanium, or tin in each of the substituents R, Rb, Rc, Rd, Re, ..., Rx.wherein x in Rx is an index different from a in Ra, and wherein the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is linear, branched, or cyclic, and wherein Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); an alkyl substituent, a silyl group, an amide containing two substituents that can be selected from alkyl substituents, silyl substituents (e.g., a silyl group having hydrogen, deuterium, or an alkyl substituent), or germyl substituents (e.g., a germyl group having hydrogen, deuterium, or an alkyl substituent); and a silyl group having three substituents, which may be selected from silyl (e.g., a silyl group having hydrogen, deuterium, or alkyl substituents), germyl (e.g., a germyl group having hydrogen, deuterium, or alkyl substituents), hydrazide, alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellocyanate, azide, fulminate, or isofulminate.

[0060] In some embodiments, each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, comprises the same element or compound.

[0061] FIG. 5 shows a flowchart illustrating a method 500 for supporting atomic layer deposition using tin-based or germanium-based precursors, according to embodiments disclosed herein. The operations of method 500 may be performed by a controller or components thereof, as described herein. For example, the operations of method 500 may be performed by a controller, as described with reference to FIGS. 1-4. In some embodiments, the controller may execute a set of instructions to control functional elements of a device to perform the described functions. Additionally or alternatively, the controller may use dedicated hardware to perform aspects of the described functions.

[0062] In 505, the method may include reacting a first precursor with a base material to form a first compound on the base material, the first compound including at least one of a Group XIII, Group XIV, or Group XV element. The operation of 505 may be performed according to examples disclosed herein. In some embodiments, aspects of the operation of 505 may be performed by a reaction element 425, as described with reference to FIG. 4.

[0063] At 510, the method may include reacting a second precursor with the first compound to form a second compound on the base material. The second precursor has the chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), where B, D(1), D(2), D(3), D(4), and D(5) are each respective moieties independently comprising at least one of germanium, tin, or silicon, C(1) comprises tellurium, sulfur, or selenium, C(2) comprises antimony, arsenic, and phosphorus, and C(3) comprises silicon, germanium, or tin. The operation of 510 can be performed according to examples disclosed herein. In some embodiments, aspects of the operations of 510 may be performed by a reactive element 425, as described with reference to FIG.

[0064] In some examples, an apparatus described herein may perform a method(s), such as method 500. The apparatus may include functionality, circuitry, logic, means, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor), or any combination thereof, for performing the following aspects of the present disclosure:

[0065] Aspect 1: A method, apparatus, or non-transitory computer-readable medium comprising operations, functions, circuits, logic, means, or instructions, or any combination thereof, comprising: reacting a first precursor with a base material to form a first compound on the base material comprising a first element, the first compound comprising at least one of an element from Group XIII, Group XIV, or Group XV; and reacting a second precursor with the first compound to form a second compound on the base material, the second precursor having a chemical formula of BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1). )D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), where each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety independently comprising at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin.

[0066] Aspect 2: The method, apparatus, or non-transitory computer-readable medium of Aspect 1 further comprising operations, functions, circuits, logic, means, or instructions, or any combination thereof, for: reacting a third precursor with the second compound to form a third compound on the second compound, the third precursor comprising at least one element from Group XIII, Group XIV, or Group XV; and reacting a fourth precursor with the third compound to form a fourth compound on the second compound, the fourth precursor comprising one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first portion and a second portion, and the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

[0067] Aspect 3: Identifying a set of X precursor pairs, each precursor pair of the set of X precursor pairs comprising one of a first set of precursors and one of a second set of precursors, each precursor pair having an associated cycle number, X being an integer greater than or equal to 2, each precursor of the first set of precursors comprising a Group XIII, Group XIV, or Group XV element, each precursor of the second set of precursors comprising one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with two or more moieties, each of the two or more moieties independently being germanium. and reacting said one of the first set of precursors with said first compound to form a respective first compound and reacting said one of the second set of precursors with said first compound to form a respective second compound, according to a number of cycles associated with each precursor pair in the set of X precursor pairs, to form a respective film associated with the precursor pair.

[0068] Aspect 4: B comprises the formula R1R2R3A, A comprises the at least one germanium, tin, or silicon relative to B, and each of R1, R2, and R3 comprises two substituents selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; the amide; the alkyl substituent, the silyl substituent, and the germyl substituent. hydrazides containing three substituents selected from silyl groups, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellocyanates, azidosulfides, alkyl sulph ...ides, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellocyanates, azidosulfides, alkyl sulphides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanides, isocyanates a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with respective substituents Ra, Rb, Rc, Rd, Re, ..., R x is independently selected from a moiety containing 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, which is different from any carbon, silicon, germanium, or tin atom in x, and x in Rx is an index different from a in Ra, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, alkyl groups, aryl groups, or alkoxy groups;4. The method, apparatus, or non-transitory computer-readable medium of any one of claims 1 to 3, wherein the amide comprises two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; the hydrazide comprises three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; the hydrazide comprises three substituents independently selected from an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, or an isofulminate;

[0069] Aspect 5: The method, apparatus, or non-transitory computer-readable medium of aspect 4, wherein each of R1, R2, and R3 comprises the same element or the same compound.

[0070] Aspect 6: (1) comprises the formula X1R4R5R6; D(2) comprises the formula X2R7R8R9; D(3) comprises the formula X3R10R11R12; D(4) comprises the formula X4R13R14R15; and D(5) comprises the formula X5R16R17R18, or any combination thereof; each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon; and each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof. Any combination of these may be selected from the group consisting of hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents;an alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, isofulminate, a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or each of the substituents Ra, Rb, and Rc, Rd, Re, ..., Rx are each independently selected from the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with Rd, Re, ..., Rx, and each independently selected from the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each of which is different from any carbon, silicon, germanium, or tin in each of said substituents Ra, Rb, Rc, ... any combination of R, Rb, Rc, Rd, Re, ..., Rx is hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; 6. The method, apparatus, or non-transitory computer-readable medium of any one of aspects 1 to 5, wherein the substituent and the germyl substituent are independently selected from the group consisting of the hydrazide; alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellocyanate, azide, fulminate, or isofulminate;

[0071] Aspect 7: The method, apparatus, or non-transitory computer-readable medium of aspect 6, wherein each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, comprises the same element or compound.

[0072] FIG. 6 shows a flowchart illustrating a method 600 for supporting atomic layer deposition using tin-based or germanium-based precursors, according to embodiments disclosed herein. The operations of method 600 may be performed by a controller or components thereof, as described herein. For example, the operations of method 600 may be performed by a controller, as described with reference to FIGS. 1-4. In some embodiments, the controller may execute a set of instructions to control functional elements of a device to perform the described functions. Additionally or alternatively, the controller may perform aspects of the described functions using dedicated hardware.

[0073] At 605, the method may include forming a plurality of deposited layers of material on a substrate. The operations of 605 may be performed according to examples disclosed herein. In some embodiments, aspects of the operations of 605 may be performed by forming element 430, as described with reference to FIG.

[0074] At 610, the method may include exposing the deposited layer of the plurality of materials to a first precursor to form a first compound including a first element on the deposited layer of the plurality of materials. The first compound includes at least one of a Group XIII, Group XIV, or Group XV element. The operations of 610 may be performed according to examples disclosed herein. In some examples, aspects of the operations of 610 may be performed by exposing element 435, as described with reference to FIG. 4 .

[0075] At 615, the method may include exposing the deposited layer of the plurality of materials to a second precursor to form a second compound on the deposited layer of the plurality of materials, the second precursor having the formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3). Each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety independently comprising at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin. The operation of 615 may be performed according to examples disclosed herein. In some embodiments, aspects of the operation of 615 may be performed by exposure element 435, as described with reference to FIG. 4.

[0076] In some examples, an apparatus described herein may perform a method(s), such as method 600. The apparatus may include functionality, circuitry, logic, means, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor), or any combination thereof, for performing the following aspects of the present disclosure:

[0077] Aspect 8: A method, apparatus, or non-transitory computer-readable medium comprising operations, functions, circuits, logic, means, or instructions, or any combination thereof, forming a deposited layer of a plurality of materials on a substrate; exposing the deposited layer of a plurality of materials to a first precursor to form a first compound on the deposited layer of a plurality of materials, the first compound comprising a first element, the first compound comprising at least one element from Group XIII, Group XIV, or Group XV; and exposing the deposited layer of a plurality of materials to a second precursor to form a second compound on the deposited layer of a plurality of materials, the second precursor having a chemical formula BC(1)-D(1), BC(1) forming the second compound comprising -C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety independently comprising at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin.

[0078] Aspect 9: The method, apparatus, or non-transitory computer-readable medium of Aspect 8, further comprising operations, functions, circuits, logic, means, or instructions, or any combination thereof, for: exposing the second compound to a third precursor to form a third compound on the deposited layer of materials, the third precursor comprising at least one element from Group XIII, Group XIV, or Group XV; and exposing the third compound to a fourth precursor to form a fourth compound on the second compound, the fourth precursor comprising one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first portion and a second portion, and the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

[0079] Embodiment 10: Identifying a set of X precursors, each precursor pair of the set of X precursor pairs comprising one precursor from a first set and one precursor from a second set, each precursor pair having an associated cycle number, X being an integer greater than 2, each precursor from the first set of precursors comprising at least one Group XIII, XIV, or XV element, each precursor from the second set of precursors comprising one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with two or more moieties, each of the two or more moieties being selected from the group consisting of germanium, 10. The method, apparatus, or non-transitory computer-readable medium of embodiment 9, further comprising operations, functions, circuits, logic, means, or instructions, or any combination thereof, for identifying, independently comprising tin, or silicon, and exposing each first compound to one of the first set of precursors to form a respective first compound, and exposing each first compound to one of the second set of precursors to form a respective second compound, in accordance with a number of cycles associated with each precursor pair in the set of X precursor pairs, to form a respective film associated with the precursor pair.

[0080] Aspect 11: An amide wherein B comprises the formula R1R2R3A, A comprises the at least one germanium, tin, or silicon relative to B, and each of R1, R2, and R3 comprises two substituents selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; hydrazides containing three substituents selected from silyl groups, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellocyanates, azidosulfides, alkyl sulph ...ides, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellocyanates, azidosulfides, alkyl sulphides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanides, isocyanates a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with respective substituents Ra, Rb, Rc, Rd, Re, ..., R x is independently selected from a moiety containing 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, which is different from any carbon, silicon, germanium, or tin atom in x, and x in Rx is an index different from a in Ra, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, alkyl groups, aryl groups, or alkoxy groups;11. The method, apparatus, or non-transitory computer-readable medium of any one of claims 8 to 10, wherein the amide comprises two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; the hydrazide comprises three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; the hydrazide comprises three substituents independently selected from an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, or an isofulminate;

[0081] Embodiment 12: The method, apparatus, or non-transitory computer-readable medium of embodiment 11, wherein each of R1, R2, and R3 comprises the same element or the same compound.

[0082] Aspect 13: D(1) comprises the formula X1R4R5R6, D(2) comprises the formula X2R7R8R9, D(3) comprises the formula X3R10R11R12, D(4) comprises the formula X4R13R14R15, and D(5) comprises the formula X5R16R17R18, or any combination thereof; each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon; each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or Any combination thereof may include: an amide containing two substituents selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents contain one or more of hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl substituents, silyl substituents, and germyl substituents, wherein one or more of the silyl substituents and the germyl substituents contain one or more of hydrogen, deuterium, or alkyl substituents;an alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, isofulminate, a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or each of the substituents Ra, Rb, and Rc, Rd, Re, ..., Rx are each independently selected from the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with Rd, Re, ..., Rx, and each independently selected from the set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each of which is different from any carbon, silicon, germanium, or tin in each of said substituents Ra, Rb, Rc, ... any combination of R, Rb, Rc, Rd, Re, ..., Rx is hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; 13. The method, apparatus, or non-transitory computer-readable medium of any of aspects 8 to 12, wherein the hydrazide group and the germyl substituents are independently selected from the group consisting of one or more hydrogen, deuterium, or alkyl substituents; alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellucyanates, azides, fulminates, or isofulminates;

[0083] Aspect 14: The method, apparatus, or non-transitory computer-readable medium of aspect 13, wherein each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, comprises the same element or compound.

[0084] It should be noted that the methods described herein describe possible implementations, and that the acts and steps may be rearranged or otherwise modified, and that other implementations are possible. Additionally, two or more portions of the methods may be combined.

[0085] DEVICES ARE DESCRIBED Below, a summary of aspects of the devices described herein is provided.

[0086] Aspect 15: An apparatus, comprising: a deposition layer of multiple materials on a substrate, at least one material of the deposition layer of multiple materials comprising a memory material; and a film on the deposition layer of multiple materials formed by exposing the deposition layer of multiple materials to a first precursor to form a first compound on the deposition layer of multiple materials comprising a first element, and exposing the deposition layer of multiple materials to a second precursor to form a second compound on the deposition layer of multiple materials, wherein the first compound comprises at least one element of Group XIII, Group XIV, or Group XV, and the second precursor is a compound represented by the formula BC(1)- and the film comprising D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety independently comprising at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin.

[0087] Aspect 16: The apparatus of aspect 15, further comprising: a second film on the film formed by exposing the film to a third precursor to form a third compound on the deposited layer of multiple materials; and exposing the fourth compound to a fourth precursor to form a fourth compound on the film, wherein the third precursor comprises at least one of Group XIII, Group XIV, or Group XV elements; the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first portion and a second portion; and the first portion and the second portion independently comprise at least one of germanium, tin, or silicon.

[0088] Embodiment 17: A method further comprising: providing a film of a set, each of the films of the set associated with a precursor pair of a set of X precursor pairs, each precursor pair of the set of X precursor pairs including one precursor of a first set and one precursor of a second set, each precursor pair having an associated cycle number; each precursor of the first set of precursors including a Group XIII, XIV, or XV element; and each precursor of the second set of precursors including tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or or tin, each of the two or more portions independently comprising germanium, tin, or silicon, and each of the set of films is formed by performing, according to the associated number of cycles of the associated pair of precursors of the set, exposing each film to one of the precursors of the first set to form a respective first compound and exposing each of the first compounds to one of the precursors of the second set to form a respective second compound.

[0089] Aspect 18: B comprises the formula R1R2R3A, A comprises the at least one germanium, tin, or silicon relative to B, and each of R1, R2, and R3 comprises two substituents selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; hydrazides containing three substituents selected from silyl and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellocyanates, and alkyl hydroxy groups; a dode, fulminate, isofulminate, -SiRaRbRc moiety, -GeRaRbRc moiety, -SnRaRbRc moiety, -SiRaRbCRcRdRe moiety, -CRaRbSiRcRdRe moiety, -SiRaRbGeRcRdRe moiety, or a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with respective substituents Ra, Rb, Rc, Rd, Re, ..., Rx, Rx is independently selected from a moiety containing 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, which are different from any carbon, silicon, germanium, or tin atom in Rx, where x in Rx is an index different from a in Ra, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, alkyl groups, aryl groups, alkoxy groups;18. The device of any one of aspects 15 to 17, wherein the amide comprises two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents comprises one or more hydrogen, deuterium, or alkyl substituents; the hydrazide comprises three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents comprises one or more hydrogen, deuterium, or alkyl substituents; the hydrazide comprises three substituents independently selected from alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, or isofulminate;

[0090] Embodiment 19: The device of embodiment 18, wherein each of R1, R2, and R3 comprises the same element or the same compound.

[0091] Aspect 20: D(1) comprises the formula X1R4R5R6, D(2) comprises the formula X2R7R8R9, D(3) comprises the formula X3R10R11R12, D(4) comprises the formula X4R13R14R15, and D(5) comprises the formula X5R16R17R18, or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, and each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or Any combination thereof may include: an amide containing two substituents selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituents and the germyl substituents contain one or more of hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl substituents, silyl substituents, and germyl substituents, wherein one or more of the silyl substituents and the germyl substituents contain one or more of hydrogen, deuterium, or alkyl substituents;Alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, isofulminate, -SiRaRbRc moiety, -GeRaRbRc moiety, -SnRaRbRc moiety, -SiRaRbCRcRdRe moiety, -CRaRbSiRcRdRe moiety, -SiRaRbGeRcRdRe moiety, or each of the substituents Ra and R b, Rc, Rd, Re, ..., Rx, each of which is a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each of which is fully saturated with Rb, Rc, Rd, Re, ..., Rx, and each of which is independently selected from a moiety containing 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, different from any carbon, silicon, germanium, or tin in each of said substituents Rb, Rb, Rc, Rd, Re, ..., Rx, wherein x in Rx is an index different from a in Rb, and each of said set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, is fully saturated with Rb, Rc, Rd, Re, ..., Rx, R, Rb, Rc, Rd, Re, ..., Rx are each independently selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents; 20. The device of any of aspects 15 to 19, wherein one or more of the silyl and germyl substituents are independently selected from the hydrazide; alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, or isofulminate, comprising one or more hydrogen, deuterium, or alkyl substituents.

[0092] Embodiment 21: The device of embodiment 20, wherein each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, comprises the same element or compound.

[0093] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0094] As used herein, "and / or" includes any and all combinations of one or more of the associated listed items.

[0095] As used herein, the term "substantially" in reference to a given parameter, characteristic, or condition means, and includes the degree to which, one of ordinary skill in the art would understand that the given parameter, characteristic, or condition is met within a range of variation, such as within acceptable manufacturing tolerances. By way of example, depending on the particular parameter, characteristic, or condition that is substantially met, the parameter, characteristic, or condition may be at least 90.0% met, at least 95.0% met, at least 99% met, or at least 99.9% met.

[0096] As used herein, spatially relative terms, such as "adjacent," "below," "lower," "lower," "bottom," "above," "upper," "top," "in front," "behind," "left," "right," and the like, may be used for ease of description to describe the relationship of one element or feature to another element(s) or feature(s), as shown in the figures. Unless otherwise specified, spatially relative terms are intended to encompass different orientations of the material in addition to the orientation depicted in the figures. For example, if the material in the figures were inverted, an element described as "below" or "below" or "beneath" or "on the bottom" of the other element or feature would be oriented "above" or "on top of" the other element or feature. Thus, the term "below" can encompass both an orientation of above and below, depending on the context in which the term is used, as would be apparent to one of ordinary skill in the art. Materials may be otherwise oriented (e.g., rotated 90 degrees, flipped, inverted), and the spatially relative descriptors used herein interpreted accordingly.

[0097] As used herein, the term "electronic device" may include, but is not limited to, memory devices and semiconductor devices that may or may not incorporate memory, such as logic devices, processor devices, or radio frequency (RF) devices. Furthermore, an electronic device may incorporate memory in addition to other functions, such as, for example, a so-called system-on-chip (SoC) that includes a processor and memory, or an electronic device that includes logic and memory. The electronic device may be a 3D electronic device, such as a 3D dynamic random access memory (DRAM) memory device, a 3D cross-point memory device, or a 3D phase change random access memory (PCRAM) memory device.

[0098] As used herein, the term "substrate" refers to and includes the underlying material or structure on which components, such as components in a semiconductor or electronic device, are formed. A substrate can be a semiconductor substrate, a base material, a base semiconductor material on a supporting structure, a metal electrode, or a semiconductor substrate on which one or more materials, structures, or regions are formed. A substrate can be a conventional silicon substrate or other bulk substrate containing semiconductor material. As used herein, the term "bulk substrate" refers to and includes not only silicon wafers, but also silicon-on-insulator ("SOI") substrates such as silicon-on-sapphire ("SOS") substrates or silicon-on-glass ("SOG") substrates, epitaxial layers of silicon on underlying semiconductor substrates, or other semiconductor or optoelectronic materials, such as silicon germanium (SiGex, where x is, for example, a mole fraction between 0.2 and 0.8), germanium (Ge), gallium arsenide (GaAs), gallium nitride (GaN), or indium phosphide (InP), among others. Additionally, when the following description refers to a "substrate," previous process steps may have been utilized to form materials, regions, or junctions in or on a base semiconductor structure or foundation.

[0099] The terms "layer" and "level" as used herein refer to an organization of geometric structures (e.g., layers, sheets) (e.g., relative to a substrate). Each layer or level may have three dimensions (e.g., height, width, and depth) and may cover at least a portion of a surface. For example, a layer or level may be a three-dimensional structure, e.g., a thin film, in which two dimensions are greater than the third. A layer or level may comprise different elements, components, or materials. In some embodiments, a layer or level may be composed of two or more sub-layers or sub-levels.

[0100] As used herein, the term "electrode" may refer to an electrical conductor, which in some embodiments may be used as an electrical contact to a memory cell or other component of a memory array. Electrodes may include traces, wires, conductive lines, conductive layers, etc. that provide conductive paths between components of a memory array.

[0101] The devices described herein, including memory arrays, may be formed on a semiconductor substrate, such as silicon, germanium, silicon-germanium alloy, gallium arsenide, or gallium nitride. In some embodiments, the substrate is a semiconductor wafer. In other embodiments, the substrate may be a silicon-on-insulator (SOI) substrate, such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP), or an epitaxial layer of semiconductor material on another substrate. The conductivity of the substrate or subregions of the substrate can be controlled through doping using various chemical species, including, but not limited to, phosphorus, boron, or arsenic. Doping may be performed by ion implantation during the initial formation or growth of the substrate, or by any other doping means.

[0102] The description set forth herein with reference to the accompanying drawings illustrates exemplary configurations and does not represent every embodiment that may be implemented or fall within the scope of the claims. As used herein, the term "exemplary" means "serving as an example, instance, or illustration," and does not mean "preferred" or "advantageous over other embodiments." The detailed description includes specific details to provide an understanding of the described techniques. However, these techniques may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concepts of the described embodiments.

[0103] In the accompanying figures, similar components or features may have the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a dash and a second label that distinguishes between the similar components. When only a first reference label is used in the specification, the description can apply to any one of the similar components having the same first reference label, regardless of the second reference label.

[0104] The functions described herein may be implemented by hardware, software executed by a processor, firmware, or any combination thereof. When implemented in software executed by a processor, the functions may be stored on or transmitted as one or more instructions (e.g., code) on a computer-readable medium. Other examples and implementations are within the scope of this disclosure and the appended claims. For example, due to the nature of software, the functions described herein may be implemented using software executed by a processor, hardware, firmware, hardwiring, or any combination thereof. Features implementing the functions may also be physically located in various locations, including being distributed such that portions of the functions are implemented in different physical locations.

[0105] For example, the various example blocks and modules described in connection with the disclosure herein may be implemented or performed using a processor such as a DSP, an ASIC, an FPGA, discrete gate logic, discrete transistor logic, discrete hardware components, other programmable logic device, or any combination thereof, designed to perform the functions described herein. The processor may be a microprocessor, a controller, a microcontroller, a state machine, or any type of processor example. A processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration).

[0106] As used herein, including the claims, "or" when used in a list of items (e.g., a list of items ending in a phrase such as "at least one of" or "one or more of") indicates an inclusive list; for example, a list of at least one of A, B, or C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, the phrase "based on" as used herein should not be construed as referring to a closed set of conditions. For example, an example step described as "based on condition A" may be based on both condition A and condition B without departing from the scope of the present disclosure. In other words, the phrase "based on" as used herein should be interpreted the same as the phrase "based at least in part on."

[0107] Computer-readable media includes both non-transitory computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Non-transitory storage media may be any available medium that can be accessed by a computer. By way of example, and not limitation, non-transitory computer-readable media may include RAM, ROM, Electrically Erasable Programmable Read-Only Memory (EEPROM), Compact Disc (CD) ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other non-transitory medium that can be used to carry or store desired program code means in the form of instructions or data structures and that can be accessed by a computer or processor. Also, any connection is properly termed a computer-readable medium. For example, if software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, Digital Subscriber Line (DSL), or wireless technologies such as infrared, radio, and microwave, the coaxial cable, fiber optic cable, twisted pair, Digital Subscriber Line (DSL), or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. As used herein, disk and disc include CD, laser disc, optical disc, digital versatile disc (DVD), floppy disc, and Blu-ray disc, where disks typically reproduce data magnetically, while discs reproduce data optically with a laser. Combinations of the above are also included within the scope of computer-readable media.

[0108] The description herein is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. 1. A method comprising: reacting a first precursor with a base material to form a first compound on the base material, the first compound including a first element, the first compound including at least one of a Group XIII, a Group XIV, or a Group XV element; reacting a second precursor with the first compound to form a second compound on the base material, the second precursor having a chemical formula B-C(1)-D(1), B-C(1)-C(1)-D(1), B-C(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), B-C(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D( 2) forming the second compound comprising D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety that independently comprises at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin; The method comprising:

2. reacting a third precursor with the second compound to form a third compound on the second compound, the third precursor comprising at least one of a Group XIII, a Group XIV, or a Group XV element; 10. The method of claim 1, further comprising: reacting a fourth precursor with the third compound to form a fourth compound on the second compound, wherein the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first portion and a second portion, and the first portion and the second portion independently comprise at least one of germanium, tin, or silicon, forming the fourth compound.

3. identifying a set of X precursor pairs, each precursor pair of the set of X precursor pairs comprising one of a first set of precursors and one of a second set of precursors, each precursor pair having an associated cycle number, X being an integer greater than or equal to 1, each precursor of the first set of precursors comprising a Group XIII, XIV, or XV element, and each precursor of the second set of precursors comprising one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with two or more moieties, each of the two or more moieties independently comprising germanium, tin, or silicon; 3. The method of claim 2, further comprising: reacting the one of the first set of precursors to form a respective first compound and reacting the one of the second set of precursors with the first compound to form a respective second compound, in response to a number of cycles associated with each precursor pair in the set of X precursor pairs, to form a respective film associated with the precursor pair.

4. B comprises the formula R1R2R3A; A contains at least one of germanium, tin, or silicon relative to B; Each of R1, R2, and R3 is hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; the hydrazides, which contain a group, a deuterium substituent, or an alkyl substituent; alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellucyanates, azides, fulminates, isofulminates, -SiRaRbRc moieties, -GeRaRbRc moieties, -SnRaRbRc moieties, -SiRaRbCRcRdRe moieties, -CRaRbSiRcRdRe moiety, -SiRaRbGeRcRdRe moiety, or a moiety comprising a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with a respective substituent Ra, Rb, Rc, Rd, Re, ..., Rx, and comprising 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, different from any carbon, silicon, germanium, or tin atoms in said respective substituent Ra, Rb, Rc, Rd, Re, ..., Rx, wherein x in Rx is Ra is an index different from a, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, and one or more of the silyl substituent and the germyl substituent contain one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent;10. The method of claim 1, wherein the hydrazide comprises three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, or isofulminate;

5. 5. The method of claim 4, wherein R1, R2, and R3 each comprise the same element or compound.

6. D(1) comprises the formula X1R4R5R6, D(2) comprises the formula X2R7R8R9, D(3) comprises the formula X3R10R11R12, D(4) comprises the formula X4R13R14R15, and D(5) comprises the formula X5R16R17R18, or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, and each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof. any combination of the above may be selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents;an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, an isofulminate, a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or each of the substituents Ra , Rb, Rc, Rd, Re, ..., Rx, each of which is fully saturated with a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, and which is independently selected from moieties containing 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, different from any carbon, silicon, germanium, or tin atoms in said respective substituents Ra, Rb, Rc, Rd, Re, ..., Rx, wherein x in Rx is an index different from a in Ra, and each of the carbon atoms, silicon atoms, germanium atoms, and tin atoms in said set is independently saturated with a set of carbon atoms, silicon atoms, germanium atoms, and tin atoms in said respective substituents Ra, Rb, Rc, Rd, Re, ..., Rx, and R a , R b , R c , R d , R e , ..., R x are each independently selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; an amide containing three substituents selected from alkyl, silyl, and germyl substituents; 10. The method of claim 1, wherein one or more of the silyl and germyl substituents are independently selected from the group consisting of hydrazides, alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellucyanates, azides, fulminates, and isofulminates.

7. 7. The method of claim 6, wherein each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, comprises the same element or compound.

8. 1. A method comprising: forming a plurality of deposited layers of materials on a substrate; exposing the deposited layer of materials to a first precursor to form a first compound on the deposited layer of materials, the first compound including a first element, the first compound including at least one of a Group XIII, Group XIV, or Group XV element; exposing the deposited layer of materials to a second precursor to form a second compound on the deposited layer of materials, the second precursor having a chemical formula B-C(1)-D(1), B-C(1)-C(1)-D(1), B-C(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), B-C(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)- forming the second compound comprising D(1), D(2), and D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety that independently comprises at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin; The method comprising:

9. exposing the second compound to a third precursor to form a third compound on the deposited layer of materials, the third precursor comprising at least one of a Group XIII, a Group XIV, or a Group XV element; 9. The method of claim 8, further comprising: exposing the third compound to a fourth precursor to form a fourth compound on the second compound, the fourth precursor comprising one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first moiety and a second moiety, the first moiety and the second moiety independently comprising at least one of germanium, tin, or silicon.

10. identifying a set of X precursors, each precursor pair of the set of X precursor pairs comprising one precursor from a first set and one precursor from a second set, each precursor pair having an associated cycle number, X being an integer greater than 2, each precursor of the first set of precursors comprising at least one Group XIII, XIV, or XV element, and each precursor of the second set of precursors comprising one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with two or more moieties, each of the two or more moieties independently comprising germanium, tin, or silicon; 10. The method of claim 9, further comprising: exposing each precursor pair in the set of X precursor pairs to one of the first set of precursors to form a respective first compound, and exposing each first compound to one of the second set of precursors to form a respective second compound, in response to a number of cycles associated with each precursor pair in the set of X precursor pairs, to form a respective film associated with the precursor pair.

11. B comprises the formula R1R2R3A; A contains at least one of germanium, tin, or silicon relative to B; Each of R1, R2, and R3 is hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; the hydrazides, which contain a group, a deuterium substituent, or an alkyl substituent; alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellucyanates, azides, fulminates, isofulminates, -SiRaRbRc moieties, -GeRaRbRc moieties, -SnRaRbRc moieties, -SiRaRbCRcRdRe moieties, -CRaRbSiRcRdRe moiety, -SiRaRbGeRcRdRe moiety, or a moiety comprising a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with a respective substituent Ra, Rb, Rc, Rd, Re, ..., Rx, and comprising 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, different from any carbon, silicon, germanium, or tin atoms in said respective substituent Ra, Rb, Rc, Rd, Re, ..., Rx, wherein x in Rx is Ra is an index different from a, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, and one or more of the silyl substituent and the germyl substituent contain one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent;9. The method of claim 8, wherein the hydrazide comprises three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; alkyl sulfide, alkyl selenide, halide, alkyl telluride, cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurocyanate, isotellucyanate, azide, fulminate, or isofulminate.

12. 12. The method of claim 11, wherein each of R1, R2, and R3 comprises the same element or compound.

13. D(1) comprises the formula X1R4R5R6, D(2) comprises the formula X2R7R8R9, D(3) comprises the formula X3R10R11R12, D(4) comprises the formula X4R13R14R15, and D(5) comprises the formula X5R16R17R18, or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, and each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof. any combination of the above may be selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents;an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, an isofulminate, a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or each of the substituents Ra , Rb, Rc, Rd, Re, ..., Rx, each of which is fully saturated with a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, and which is independently selected from moieties containing 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, different from any carbon, silicon, germanium, or tin atoms in said respective substituents Ra, Rb, Rc, Rd, Re, ..., Rx, wherein x in Rx is an index different from a in Ra, and each of the carbon atoms, silicon atoms, germanium atoms, and tin atoms in said set is independently saturated with a set of carbon atoms, silicon atoms, germanium atoms, and tin atoms in said respective substituents Ra, Rb, Rc, Rd, Re, ..., Rx, and R a , R b , R c , R d , R e , ..., R x are each independently selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; an amide containing three substituents selected from alkyl, silyl, and germyl substituents; 9. The method of claim 8, wherein one or more of the silyl and germyl substituents are independently selected from the group consisting of hydrazides, alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellocyanates, azides, fulminates, and isofulminates.

14. 14. The method of claim 13, wherein each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof, comprises the same element or compound.

15. 1. An apparatus comprising: a deposited layer of multiple materials on a substrate, at least one material of the deposited layer of multiple materials comprising a memory material; 1. A film on a deposited layer of materials formed by exposing the deposited layer of materials to a first precursor to form a first compound on the deposited layer of materials comprising a first element, and exposing the deposited layer of materials to a second precursor to form a second compound on the deposited layer of materials, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element, and the second precursor has a chemical formula of B-C(1)-D(1), B-C(1)-C(1)-D(1), B-C(2)-D(1)D( 2), BD(3)-C(2)-C(2)-D(1)D(2), B-C(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety independently comprising at least one of germanium, tin, or silicon; C(1) comprises tellurium, sulfur, or selenium; C(2) comprises antimony, arsenic, and phosphorus; and C(3) comprises silicon, germanium, or tin; The device comprising:

16. 16. The apparatus of claim 15, further comprising a second film on the film formed by exposing the film to a third precursor to form a third compound on the deposited layer of materials, and exposing the fourth compound to a fourth precursor to form a fourth compound on the film, wherein the third precursor comprises at least one of a Group XIII, XIV, or XV element, and the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin combined with a first portion and a second portion, and the first portion and the second portion independently comprise at least one of germanium, tin, or silicon.

17. The method further includes a set of films, each of the films of the set associated with a precursor pair of a set of X precursor pairs, each precursor pair of the set of X precursor pairs including one precursor of a first set and one precursor of a second set, each precursor pair having an associated cycle number, each precursor of the first set of precursors including a Group XIII, XIV, or XV element, and each precursor of the second set of precursors including tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or sulfur bonded with two or more moieties.

17. The apparatus of claim 16, wherein each of the two or more portions independently comprises germanium, tin, or silicon, and wherein each of the set of films is formed by performing, according to the associated number of cycles of the associated pair of precursors of the set, exposing each of the films to the one of the first set of precursors to form a respective first compound and exposing each of the first compounds to the one of the second set of precursors to form a respective second compound.

18. B comprises the formula R1R2R3A; A contains at least one of germanium, tin, or silicon relative to B; Each of R1, R2, and R3 is hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; the hydrazides, which contain a group, a deuterium substituent, or an alkyl substituent; alkyl sulfides, alkyl selenides, halides, alkyl tellurides, cyanides, isocyanides, cyanates, isocyanates, thiocyanates, isothiocyanates, selenocyanates, isoselenocyanates, tellurocyanates, isotellucyanates, azides, fulminates, isofulminates, -SiRaRbRc moieties, -GeRaRbRc moieties, -SnRaRbRc moieties, -SiRaRbCRcRdRe moieties, -CRaRbSiRcRdRe moiety, -SiRaRbGeRcRdRe moiety, or a moiety comprising a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, each fully saturated with a respective substituent Ra, Rb, Rc, Rd, Re, ..., Rx, and comprising 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, different from any carbon, silicon, germanium, or tin atoms in said respective substituent Ra, Rb, Rc, Rd, Re, ..., Rx, wherein x in Rx is Ra is an index different from a, and the carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof in the set are linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, and one or more of the silyl substituent and the germyl substituent contain one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent;16. The device of claim 15, wherein the hydrazide comprises three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents comprise one or more hydrogen, deuterium, or alkyl substituents; an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, or an isofulminate.

19. 20. The device of claim 18, wherein each of R1, R2, and R3 comprises the same element or compound.

20. D(1) comprises the formula X1R4R5R6, D(2) comprises the formula X2R7R8R9, D(3) comprises the formula X3R10R11R12, D(4) comprises the formula X4R13R14R15, and D(5) comprises the formula X5R16R17R18, or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, and each of R4, R5, and R6, each of R7, R8, and R9, each of R10, R11, and R12, each of R13, R14, and R15, each of R16, R17, and R18, or any combination thereof. any combination of the above may be selected from hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents; a hydrazide containing three substituents selected from alkyl, silyl, and germyl substituents, wherein one or more of the silyl and germyl substituents contain one or more hydrogen, deuterium, or alkyl substituents;an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellurocyanate, an azide, a fulminate, an isofulminate, a -SiRaRbRc moiety, a -GeRaRbRc moiety, a -SnRaRbRc moiety, a -SiRaRbCRcRdRe moiety, a -CRaRbSiRcRdRe moiety, a -SiRaRbGeRcRdRe moiety, or each of the substituents Ra , Rb, Rc, Rd, Re, ..., Rx, each of which is fully saturated with a set of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, and which is independently selected from moieties containing 1 to 10 carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof, different from any carbon, silicon, germanium, or tin in said respective substituents Ra, Rb, Rc, Rd, Re, ..., Rx, wherein x in Rx is an index different from a in Ra, and each of the carbon atoms, silicon atoms, germanium atoms, and tin atoms in said set is independently saturated with a set of carbon atoms, silicon atoms, germanium atoms, and tin atoms in said respective substituents Ra, Rb, Rc, Rd, Re, ..., Rx, the tin atom, tin atom, or any combination thereof is linear, branched, or cyclic, and Ra, Rb, Rc, Rd, Re, ..., Rx are hydrogen, deuterium, an alkyl group, an aryl group, an alkoxy group; an amide containing two substituents selected from alkyl substituents, silyl substituents, and germyl substituents, wherein one or more of the silyl substituents and the germyl substituents contain one or more hydrogen substituents, deuterium substituents, or alkyl substituents; the amide containing three substituents selected from alkyl substituents, silyl substituents, and germyl substituents.

16. The device of claim 15, wherein one or more of the silyl and germyl substituents are independently selected from the group consisting of a hydrazide, an alkyl sulfide, an alkyl selenide, a halide, an alkyl telluride, a cyanide, an isocyanide, a cyanate, an isocyanate, a thiocyanate, an isothiocyanate, a selenocyanate, an isoselenocyanate, a tellurocyanate, an isotellocyanate, an azide, a fulminate, or an isofulminate.

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