Tantalum carbide composite material and method for manufacturing tantalum carbide composite material

Abstract

This invention discloses a tantalum carbide composite material and a method for manufacturing the tantalum carbide composite material. The tantalum carbide composite material comprises a substrate, a buffer layer deposited on the entire surface of the substrate, and a tantalum carbide layer deposited on the upper surface of the buffer layer.

Description

[Technical Field]

[0001] This disclosure relates to a tantalum carbide composite material and a method for producing a tantalum carbide composite material according to an embodiment. [Background technology]

[0002] Susceptor components used in semiconductor manufacturing equipment face the problem of corrosion due to the etching of carbon materials by corrosive gases if the carbon materials used in conventional semiconductor processes are used as is. Therefore, components are used in which the surface of the carbon material structure is coated with silicon carbide (SiC) or tantalum carbide (TaC).

[0003] In tantalum carbide composite materials, where tantalum carbide (TaC) is coated onto the surface of a carbon material, stress is generated due to the difference in thermal expansion coefficients between the carbon material and the tantalum carbide film. This leads to problems such as cracking, distortion, and delamination, affecting the damage and lifespan of the parts to which it is applied. [Overview of the project] [Problems that the invention aims to solve]

[0004] Components coated with tantalum carbide (TaC) utilize tantalum carbide composite materials, where tantalum carbide (TaC) is coated onto the surface of a carbon material. However, thermal stress caused by the difference in thermal expansion coefficients between the carbon substrate and the tantalum carbide can lead to problems such as distortion, cracking, and delamination. Therefore, the development of a buffer layer to eliminate thermal stress between the carbon substrate and the tantalum carbide film is necessary.

[0005] To solve the problems described above, the present disclosure according to one embodiment provides a tantalum carbide composite material and a method for manufacturing a tantalum carbide composite material that are suitable for stress relaxation between a substrate and a tantalum carbide film (e.g., a tantalum carbide coating layer) and that incorporate a buffer layer for stress relaxation.

[0006] The objective is to provide a tantalum carbide composite material that is suitable for stress relaxation between a substrate and a tantalum carbide film according to one embodiment, by introducing a buffer layer for stress relaxation to reduce stress between the tantalum carbide film and the carbon substrate, thereby mitigating distortion, cracking, delamination, and the like.

[0007] The present invention provides an application of a tantalum carbide composite material incorporating a buffer layer for stress relaxation, which is suitable for stress relaxation according to one embodiment of the present disclosure. The present invention also provides a semiconductor manufacturing component that includes a tantalum carbide composite material incorporating a buffer layer for stress relaxation, which is suitable for stress relaxation according to one embodiment of the present disclosure, and which can improve lifespan stability, semiconductor manufacturing process stability, and process efficiency.

[0008] However, the problems that this invention aims to solve are not limited to those mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0009] A tantalum carbide composite material according to the embodiments of this disclosure may include a substrate, a buffer layer deposited on the substrate, and a tantalum carbide layer deposited on the upper surface of the buffer layer.

[0010] The buffer layer according to one embodiment may contain a material with van der Waals bonds.

[0011] In one embodiment, the van der Waals bonded material may include at least one or a combination thereof from pyrolytic carbon, BN, MoS2, WSe2, ReS2, and MoTe2.

[0012] In one embodiment, the buffer layer may have different coefficients of thermal expansion in the lateral direction of the forming surface and in the vertical direction of the forming surface.

[0013] In the buffer layer according to one embodiment, the coefficient of thermal expansion in the vertical direction of the formation surface may be greater than the coefficient of thermal expansion in the lateral direction of the formation surface.

[0014] The coefficient of thermal expansion in the vertical direction of the formation surface of the buffer layer according to one embodiment is about 6.0×10 -6 / K to about 7.0×10 -6 / K, and the coefficient of thermal expansion in the lateral direction of the formation surface of the buffer layer is about 0.2×10 -6 / K to about 0.7×l0 -6 / K.

[0015] In the buffer layer according to one embodiment, the coefficient of thermal expansion in the vertical direction of the formation surface can satisfy at least one or more or all of the following conditions.

[0016] i) Lower than the coefficient of thermal expansion of the tantalum carbide layer,

[0017] ii) Higher than the coefficient of thermal expansion of the substrate,

[0018] iii) Higher than the intermediate value of the coefficients of thermal expansion of the substrate and the tantalum carbide layer

[0019] The thickness of the buffer layer according to one embodiment is about 1 μm to about 100 μm (micrometers).

[0020] The thickness of the tantalum carbide layer according to one embodiment is about 10 μm to about 100 μm.

[0021] The buffer layer according to one embodiment is formed in a layered structure with reference to the upper surface of the substrate.

[0022] The tantalum carbide layer according to one embodiment may be crack-free. The substrate according to one embodiment can include at least one or a combination of graphene, graphite, or fullerene.

[0023] In one embodiment, the distortion of the tantalum carbide composite material is approximately 10 μm to approximately 50 μm.

[0024] The tantalum carbide layer according to one embodiment may contain cracks with a width of approximately 0.3 μm to approximately 0.6 μm.

[0025] A method for producing a tantalum carbide composite material according to the embodiments of this disclosure includes the steps of preparing a substrate, forming a buffer layer on the substrate, and forming a tantalum carbide layer on the buffer layer, wherein the buffer layer comprises a van der Waals bonded material, and the buffer layer can be formed on at least one surface or the entire surface of the substrate.

[0026] In one embodiment, the step of forming the tantalum carbide layer can be performed to form a single film on the buffer layer.

[0027] In one embodiment, the step of forming the buffer layer can be carried out by depositing the buffer layer at a temperature of approximately 1,500°C to approximately 1,900°C and a pressure of approximately 500 torr to approximately 900 torr.

[0028] In one embodiment, the step of forming the tantalum carbide layer allows for the deposition of the tantalum carbide film at a temperature of approximately 1,900°C to approximately 2,300°C and a pressure of approximately 200 torr to approximately 400 torr.

[0029] In one embodiment, the steps of forming the buffer layer and forming the tantalum carbide layer can be carried out using a CVD process.

[0030] The step of forming the buffer layer according to one embodiment involves forming a buffer layer containing a van der Waals bonded substance, the van der Waals bonded substance may include at least one or a combination thereof from pyrolytic carbon, BN, MoS2, WSe2, ReS2, and MoTe2.

[0031] The manufacturing method according to one embodiment can produce the tantalum carbide composite material according to the embodiment of this disclosure. [Effects of the Invention]

[0032] This disclosure provides a tantalum carbide composite material and a method for manufacturing the same, which introduces a buffer layer for stress relaxation between a substrate and a tantalum carbide film, thereby reducing stress between the tantalum carbide film and the carbon substrate, and mitigating distortion, cracking, delamination, etc. This disclosure also provides a component (e.g., a component for plasma processes) comprising the tantalum carbide composite material according to an embodiment of this disclosure. [Brief explanation of the drawing]

[0033] [Figure 1a] An exemplary configuration of a tantalum carbide composite material in which a tantalum carbide film is formed on one surface of a substrate according to one embodiment is shown.

[0034] [Figure 1b] The structure of a tantalum carbide composite material in which a tantalum carbide film is deposited on a substrate according to one embodiment is shown as an example.

[0035] [Figure 2] Figure 1b illustrates the configuration of the substrate and buffer layer in a tantalum carbide composite material according to one embodiment.

[0036] [Figure 3] This shows a cross-sectional SEM image of a tantalum carbide composite material according to one embodiment.

[0037] [Figure 4a] This is an SEM image of the surface of the tantalum carbide layer in a tantalum carbide composite material according to one embodiment, and is the SEM image of Comparative Example 1.

[0038] [Figure 4b]This is an SEM image of the surface of the tantalum carbide layer in a tantalum carbide composite material according to one embodiment, and is an SEM image of Embodiment 4.

[0039] [Figure 4c] This is an SEM image of the surface of the tantalum carbide layer in a tantalum carbide composite material according to one embodiment, and is an SEM image of Embodiment 1.

[0040] [Figure 5] This shows the width of the microcracks in a tantalum carbide composite material according to one embodiment.

[0041] [Figure 6] This shows the magnitude of the warpage of a tantalum carbide composite material according to one embodiment.

[0042] [Figure 7a] An example of a stress relaxation mechanism using a tantalum carbide composite material according to one embodiment is schematically shown.

[0043] [Figure 7b] An example of a stress relaxation mechanism using a tantalum carbide composite material according to one embodiment is schematically shown. [Modes for carrying out the invention]

[0044] Embodiments of the present invention will be described in detail below with reference to the attached drawings. In describing the present invention, if a specific description of a relevant known function or configuration is deemed to unnecessarily obscure the gist of the invention, such detailed description will be omitted. Furthermore, the terms used herein are those used to appropriately express preferred embodiments of the present invention, and these may vary depending on the intent of the user, operator, or the conventions of the art to which the invention belongs. Therefore, the definitions of these terms should be based on the overall content of this specification. The same reference numerals shown in each drawing indicate the same component.

[0045] Throughout the specification, when a member is described as being "on top of" another member, this includes not only cases where one member is in contact with another member, but also cases where another member exists between the two members.

[0046] When a part of the specification "includes" a certain component, this does not mean that it excludes other components, but rather that it further includes other components.

[0047] The tantalum carbide composite material and the method for producing the tantalum carbide composite material of the present invention will be described in detail below with reference to embodiments and drawings. However, the present invention is not limited to such embodiments and drawings.

[0048] Figures 1a and 1b, according to one embodiment, illustrate the configuration of a tantalum carbide composite material. In Figure 1a, the tantalum carbide composite material includes a base material 100 and a tantalum carbide layer 300, with a buffer layer 200 between the base material 100 and the tantalum carbide layer 300.

[0049] The base material 100 according to one embodiment can be appropriately selected depending on the application of the tantalum carbide composite material. In one example, the base material 100 may be a carbon base material, taking into consideration the coefficient of thermal expansion with respect to the tantalum carbide layer 300. In one example, the base material 100 may include graphene, graphite, or fullerene or a combination thereof. In one example, the base material 100 may be graphene or graphite.

[0050] In one embodiment, the thickness of the substrate 100 may be about 1 mm to about 10 mm. In some examples, it may be about 1 mm to about 10 mm; about 1 mm to about 8 mm; about 1 mm to about 6 mm; about 1 mm to about 4 mm; or about 1 mm to about 3 mm. In some examples, if the thickness falls within the range of the substrate 100 mentioned, deformation of the substrate 100 after deposition of the tantalum carbide layer 300 can be minimized, improving the lifespan and process stability of the part to which the tantalum carbide composite material with the buffer layer 200 is applied.

[0051] In one embodiment, the buffer layer 200 is formed on the substrate 100, and for example, the buffer layer 200 can be formed (e.g., by vapor deposition) on at least one surface or at least a part or the entire surface of the substrate 100. In one example, referring to Figure 1a, the buffer layer 200 may be formed on at least a part or the entire surface of one surface of the substrate 100 (e.g., the upper surface or the lower surface). In one example, referring to Figure 1b, the buffer layer 200 may be formed on at least a part of the entire surface of the substrate 100 or on the entire surface (e.g., the upper surface, the lower surface, and the side surfaces) surrounding the substrate 100.

[0052] In one embodiment, the buffer layer 200 may contain one or more van der Waals bonding materials. In one example, the buffer layer 200 to which van der Waals bonding materials are applied can alleviate the difference in physical properties (e.g., stress due to the difference in thermal expansion coefficients) between the substrate 100 and the tantalum carbide layer 300. For example, by alleviating the stress due to the difference in thermal expansion coefficients between the substrate 100 and the tantalum carbide layer 300, the occurrence of cracks (e.g., distortion) and delamination can be reduced.

[0053] The van der Waals bonded material according to one embodiment may include at least one selected from the group consisting of pyrolytic carbon, BN (e.g., hexagonal boron nitride (h-BN)), MoS2, WSe2, ReS2, MoTe2, and combinations thereof. In one example, the buffer layer 200 may include a layered structure having a number of van der Waals bonds (e.g., bonds in the direction perpendicular to the formation surface) with respect to the formation surface (or deposition surface) of the buffer layer 200 by applying a van der Waals bonded material. This is because when TaC expands in the lateral direction of the formation surface due to thermal expansion during the deposition process of TaC, the vertical bonds of the formation surface are broken without breaking the lateral bonds of the formation surface, and internal delamination occurs, resulting in interlayer sliding. That is, even if multiple internal delaminations occur within the interlayer structure, it can be effectively expanded in accordance with the expansion of TaC through interlayer sliding due to the characteristics of van der Waals bonds and can withstand the expansion of TaC (FIGS. 7a and 7b).

[0054] A source material for forming (e.g., depositing) the van der Waals bonded material according to one embodiment may be used and appropriately selected by a forming process (e.g., a deposition process). The source material may be appropriately selected by the process in a phase such as a gas or a solid (powder). In one example, as an example of the source material, pyrolytic carbon is formed by pyrolyzing a carbon-based material containing at least one selected from hydrocarbons (C x H y )(where x and y are natural numbers and 1 < x < 6). For example, the hydrocarbon is propane (C3H8), butane (C4H 10), propylene (C3H6), or acetylene (C2H2), or combinations thereof may be selected. In some examples, the source material may be, but is not limited to, a BN source material (e.g., B2H6 and / or NH3), a MoS2 source material (e.g., S powder and MoO2 powder), a WSe2 source material (e.g., WO3 powder and Se gas), a ReS2 source material (e.g., NH4ReO4 (ammonium perrhenate) (precursor (solid)) and S gas), or a MoTe2 source material (e.g., Te powder + MoCl5 and MoO3 powder). For example, the pyrolysis carbon may be a carbon-based substance produced by pyrolysis of a hydrocarbon gas at temperatures of approximately 1,100°C to 2,000°C; approximately 1,300°C to 2,000°C; approximately 1,400°C to 2,000°C; approximately 1,500°C to 1,900°C; approximately 1,600°C to 1,900°C; or approximately 1,700°C to 1,800°C (e.g., deposition temperature, CVD deposition temperature, or heat treatment temperature). The buffer layer formation step of this disclosure can be described by referring to the manufacturing method steps described below.

[0055] The thickness of the buffer layer 200 according to one embodiment may be about 1 μm to about 50 μm. In one example, the thickness of the buffer layer may be about 1 μm to about 5 μm; about 1 μm to about 10 μm; about 1 μm to about 15 μm; about 1 μm to about 20 μm; about 1 μm to about 25 μm; about 1 μm to about 30 μm; about 1 μm to about 35 μm; about 1 μm to about 40 μm; about 1 μm to about 45 μm; or about 1 μm to about 50 μm. In one example, the thickness of the buffer layer may be about 2 μm to about 5 μm; about 2 μm to about 10 μm; about 2 μm to about 13 μm; about 2 μm to about 17 μm; about 2 μm to about 25 μm; about 2 μm to about 32 μm; about 2 μm to about 41 μm; or about 2 μm to about 48 μm. In some examples, the thickness of the buffer layer may be approximately 5 μm to 12 μm; 5 μm to 20 μm; 5 μm to 23 μm; 5 μm to 34 μm; or 5 μm to 43 μm. In some examples, the thickness of the buffer layer within the above range can reduce stress due to the difference in thermal expansion interface between the substrate 100 and the tantalum carbide layer 300, prevent the occurrence of cracks, pinholes, etc. in the tantalum carbide film 300, and improve the lifespan and process stability of the parts to which the tantalum carbide composite material is applied.

[0056] In one embodiment, the tantalum carbide layer 300 may be formed on at least a part or the entirety of the buffer layer 200, or it may be formed as a single film. The single film may be a single layer or multiple layers.

[0057] In one embodiment, the atomic ratio of Ta to C in the tantalum carbide layer 300 may be approximately 0.9 to approximately 1.34:approximately 1; approximately 0.1 to approximately 1.34:approximately 1.0 to approximately 1.34:approximately 1.1 to approximately 1.34:approximately 1; approximately 1.2 to approximately 1.34:approximately 1; or approximately 1.3 to approximately 1.34:approximately 1. By adjusting the atomic ratios mentioned, the surface energy of the tantalum carbide film can be lowered to prevent the adhesion of contaminants, thereby preventing damage to the substrate 100 by plasma and corrosive gases in the process environment (e.g., semiconductor manufacturing process), and improving the lifespan and process stability of components to which the tantalum carbide composite material is applied.

[0058] A tantalum carbide film 300 according to one embodiment may be heat-treated after synthesis and / or deposition (e.g., CVD deposition), for example, at a temperature of 2,000°C to 2,500°C, in an inert gas (e.g., Ar gas) atmosphere, for about 1 hour to about 20 hours; about 2 hours to about 20 hours; about 4 hours to about 20 hours; about 6 hours to about 20 hours; about 8 hours to about 18 hours; or about 8 hours to about 15 hours.

[0059] The tantalum carbide film 300 according to one embodiment may have a thickness of about 10 μm to about 100 μm. In some examples, this could be about 10 μm to about 100 μm; about 10 μm to about 80 μm; about 10 μm to about 60 μm; about 10 μm to about 40 μm; or about 10 μm to about 20 μm.

[0060] In one embodiment, the thickness ratio of the buffer layer 200 to the tantalum carbide film 300 may be about 0.1:about 1 to about 0.01:about 1. In one example, the thickness ratio of the buffer layer 200 to the tantalum carbide film 300 may preferably be about 0.08:about 1 to about 0.05:about 1. In one example, if the thickness ratio falls within the range mentioned, it is possible to reduce stress due to the difference in thermal expansion coefficients between the substrate 100 and the tantalum carbide layer 300, prevent the occurrence of cracks, pinholes, etc. in the tantalum carbide film 300, and improve the lifespan and process stability of the parts to which the tantalum carbide composite material is applied.

[0061] The tantalum carbide film 300 according to one embodiment can be crack-free or can include cracks in at least one or more of the surface, interior, or contact surface with the buffer layer 200 of the tantalum carbide film 300. In one example, the surface of the tantalum carbide film 300 may include cracks. In one example, the tantalum carbide film 300 may include fine cracks having a width of about 0.3 μm to about 0.6 μm. For example, it may include fine cracks having a width of about 0.3 μm to about 0.55 μm; about 0.3 μm to about 0.5 μm; about 0.3 μm to about 0.4 μm; or about 0.3 μm to about 0.35 μm. In one example, the width of the crack refers to measuring the width of the fine crack generated in the carbon material including the tantalum carbide coating layer, observing the image of the crack site at 2000 magnification using SEM analysis equipment (for example, SEM model name: JEOL, JSM-6390), and showing the average of the values measured for 10 points in the vertical direction of the gap between the cracks. In one example, at least one or more of the surface, interior, or contact surface with the buffer layer of the tantalum carbide film 300 can be crack-free.

[0062] The coefficient of thermal expansion (CTE) of the substrate 100 according to one embodiment is about 6×10 -6 / K or less; about 5×10 -6 / K or less; or about 4×10 -6 / K or less. In one example, the coefficient of thermal expansion (CTE) of the substrate 100 is about 4×10 -6 / K to about 6×10 -6 / K.

[0063] Among the coefficients of thermal expansion (CTE, Coefficient of Thermal Expansion) of the buffer layer 200 according to one embodiment (for example, the average coefficient of thermal expansion), in FIGS. 1a and 1b, the lateral coefficient of thermal expansion of the formation surface of the buffer layer 200 is about 0.3×10 -6 / K or more and about 0.5×10 -6 / K or less, and in FIGS. 1a and 1b, the vertical coefficient of thermal expansion of the formation surface of the buffer layer 200 is about 6.0×10 6 / K or higher and approximately 7.0 × 10 -6 It may be less than / K. In one embodiment, the buffer layer 200 has a weaker bonding force perpendicular to the forming surface due to van der Waals bonds compared to the bonding force lateral to the forming surface (e.g., covalent bonds), and even if the thermal expansion coefficient lateral to the forming surface of the buffer layer is extremely low, as TaC expands due to heat (e.g., expands at high temperatures), the lateral bonds of the forming surface do not break when the forming surface expands laterally, but the bonds perpendicular to the forming surface are interrupted, causing internal delamination (or multiple delamination) and interlayer sliding among the van der Waals bonds (Figures 7a and 7b). That is, if the buffer layer 200 has a layered structure due to van der Waals bonds, it can efficiently expand in accordance with the expansion of TaC through internal interlayer sliding in such a layered structure.

[0064] In a buffer layer 200 according to one embodiment, the coefficient of thermal expansion in the direction perpendicular to the formation surface can satisfy at least one of the following conditions i), ii), and iii).

[0065] i) It is lower than the thermal expansion coefficient of tantalum carbide film 300.

[0066] ii) It is higher than the thermal expansion coefficient of the substrate (for example, substrate 100 in Figures 1a and 1b).

[0067] iii) The thermal expansion coefficient is higher than the median value of the thermal expansion coefficient of the substrate (for example, the substrate 100 in Figures 1a and 1b) and the tantalum carbide film 300.

[0068] In a buffer layer 200 according to one embodiment, the ratio of the coefficient of thermal expansion in the vertical direction to the coefficient of thermal expansion in the transverse direction of the formed surface may be approximately 1:approximately 1 (excess) to approximately 14; approximately 1:approximately 1 (excess) to approximately 14; approximately 1:approximately 1 (excess) to approximately 12; approximately 1:approximately 1 (excess) to approximately 10; approximately 1:approximately 1 (excess) to approximately 8; approximately 1:approximately 1 (excess) to approximately 5; approximately 1:approximately 1.1 to approximately 3; approximately 1:approximately 1.1 to approximately 2.5; approximately 1:approximately 1.1 to approximately 2.2; approximately 1:approximately 1.1 to approximately 2; approximately 1:approximately 1.1 to approximately 1.8; approximately 1:approximately 1.1 to approximately 1.6; approximately 1:approximately 1.1 to approximately 1.4; or approximately 1:approximately 1.1 to approximately 1.2.

[0069] In one embodiment of the buffer layer 200, the intermediate value between the thermal expansion coefficient of the substrate 100 and the thermal expansion coefficient of the tantalum carbide layer 300 in the direction perpendicular to the forming surface (for example, b or d in Figures 1a and 1b) is approximately 1.1 to approximately 1.9:approximately 1; approximately 1.1 to approximately 1.8:approximately 1; approximately 1.1 to approximately 1.7:approximately 1; approximately 1.1 to approximately 1.5:approximately 1; approximately 1.1 to approximately 1.4:approximately 1; approximately 1.1 to approximately 1.3:approximately 1; approximately 1.1 to approximately 1.2:approximately 1; or 1:1.2.

[0070] In this document, the direction perpendicular to the formation surface of the buffer layer 100 corresponds to the growth direction (or deposition direction) of the buffer layer on the substrate 100. Referring to Figures 1a and 1b, in this document, the direction perpendicular to the formation surface of the buffer layer means the Z-axis direction in Figure 1a, and as shown in Figure 1b, when a deposition layer is formed over the entire surface surrounding the substrate 100, it means the direction perpendicular to the formation surfaces 110, 120, 130, and 140 of the buffer layer 200 on the substrate 100.

[0071] In this document, the lateral direction of the buffer layer formation surface is the X-axis or Y-axis direction in the case of Figure 1a. As shown in Figure 1b, when a vapor-deposited layer is formed on the front surface surrounding the substrate 100, the lateral direction of the buffer layer formation surface means all directions parallel to each of the formation surfaces 110, 120, 130, and 140 of the buffer layer 200 of the substrate 100, as shown in Figure 1b.

[0072] The coefficient of thermal expansion (CTE, Coefficient of Thermal Expansion) (e.g., average coefficient of thermal expansion) of the tantalum carbide film 300 according to one embodiment is approximately 6 × 10⁻⁶ -6 / K excess; approx. 7×10 -6 / K or higher; or approximately 8 × 10 -6 It may be 100°F or higher. In one example, the coefficient of thermal expansion (CTE) of tantalum carbide film 300 is approximately 6 × 10⁻⁶. -6 / K excess~approx. 7×10 -6 / K; approx. 6.1×10 -6 / K ~ approx. 7×10 -6 / K; or approximately 6.3 × 10-6 / K ~ approx. 7×10 -6 / K is also fine.

[0073] The thermal expansion coefficient according to one embodiment may be measured at room temperature to 1000°C using a thermal expansion coefficient measuring instrument (DIL 402C). In this document, the thermal expansion coefficient refers to the maximum, minimum, or average value.

[0074] The distortion of the tantalum carbide composite material according to one embodiment may be about 10 μm to about 50 μm. In some examples, it may be about 10 μm to about 50 μm; about 10 μm to about 40 μm; about 10 μm to about 30 μm; or about 10 μm to about 20 μm. A preferred embodiment of the present disclosure provides a method for measuring the distortion of the tantalum carbide composite material, which includes the steps of (a) manufacturing a tantalum carbide coated product with dimensions of φ200 × 3 mm; (b) measuring the height of the product with respect to the upper half of a CMM (three-dimensional shape) measuring machine; and (c) measuring 10 points at the same intervals at 0°, 60°, and 120° intervals, thereby expressing the deviation of the values ​​measured at a total of 30 points as distortion.

[0075] By adjusting the difference in thermal expansion coefficients (CTE) between the substrate 100 and the tantalum carbide layer 300 according to one embodiment, the substrate can be protected in extreme environments such as high temperatures, plasma, and corrosive gases in components to which the tantalum carbide composite material is applied (e.g., semiconductor manufacturing components) (e.g., plasma process components), thereby improving the lifespan and process stability of the components. In one example, although there is a difference in thermal expansion coefficients between the substrate 100 and the tantalum carbide layer 300, the introduction of the buffer layer 200 induces stress relaxation, preventing cracks and delamination of the tantalum carbide film 300, thereby protecting the substrate in process environments including high temperatures, plasma, and corrosive gases in components to which it is applied (e.g., semiconductor manufacturing components) (e.g., plasma process components), thereby improving the lifespan and process stability of the components.

[0076] A component comprising the tantalum carbide composite material of the present disclosure according to one embodiment can be provided. For example, the tantalum carbide composite material includes the contents mentioned in the above-mentioned description of the tantalum carbide composite material. For example, the component may be a component used in semiconductor processes. For example, the component may be a component of single-crystal SiC / AlN Epitaxy and SiC / AlN Growth process equipment.

[0077] Figure 2, according to one embodiment, shows a process flowchart of a method for manufacturing a tantalum carbide composite material according to the present disclosure. Referring to Figure 2, the manufacturing method includes a step 410 of preparing a substrate, a step 420 of forming a buffer layer, and a step 430 of forming a tantalum carbide layer.

[0078] Step 410, which prepares a substrate according to one embodiment, can prepare a substrate (e.g., substrate 100 in Figures 1a and 1b) as described in the description of the tantalum carbide composite material of the present disclosure (e.g., the tantalum carbide composite material in Figures 1a and 1b).

[0079] In step 410, which involves preparing a substrate according to one embodiment, the prepared substrate (for example, the substrate 100 in Figures 1a and 1b) can be placed in a deposition chamber and evacuated under vacuum.

[0080] Step 420 of forming a buffer layer according to one embodiment is the step of forming a buffer layer (e.g., the buffer layer 200 in Figures 1a and 1b) on a substrate (e.g., the substrate 100 in Figures 1a and 1b). The buffer layer according to one embodiment (e.g., the buffer layer 200 in Figures 1a and 1b) may be formed on at least one surface or at least a portion of the entire surface of the substrate (e.g., the substrate 100 in Figures 1a and 1b). Preferably, the buffer layer (e.g., the buffer layer 200 in Figures 1a and 1b) may be formed as a single film on the entire surface of the substrate (e.g., the substrate 100 in Figures 1a and 1b). In some examples, the buffer layer (e.g., the buffer layer 200 in Figures 1a and 1b) may be a single layer or multiple layers.

[0081] Step 420, which forms the buffer layer according to one embodiment, may involve depositing the buffer layer at a temperature of approximately 1,100°C to approximately 2,000°C; approximately 1,300°C to approximately 2,000°C; approximately 1,400°C to approximately 2,000°C; approximately 1,500°C to approximately 1,900°C; approximately 1,600°C to approximately 1,900°C; or approximately 1,700°C to approximately 1,900°C (e.g., deposition temperature, CVD deposition temperature, or heat treatment temperature) and at a pressure of approximately 400 torr to approximately 1,000 torr; approximately 500 torr to approximately 1,000 torr; or approximately 500 torr to approximately 900 torr.

[0082] Step 420, forming a buffer layer according to one embodiment, allows the buffer layer to be deposited by supplying raw materials for buffer layer deposition under the temperature and pressure conditions mentioned. In some examples, a raw material gas and a carrier gas may be supplied. In some examples, the raw material gas may be selected as a raw material gas suitable for deposition (e.g., CVD) depending on the components of the buffer layer. For example, if the buffer layer is pyrolysis carbon, propane (C3H8), butane (C4H8) may be used. 10) Supply at least one or a combination of hydrocarbon gases such as propylene (C3H6) or acetylene (C2H2), and obtain a buffer layer deposited with a carbonaceous substance generated by thermally decomposing the hydrocarbon gas under the mentioned process conditions. In an example, the carrier gas may be selected from hydrogen (H2), argon, or nitrogen.

[0083] Step 420 of forming a buffer layer according to an embodiment forms a buffer layer containing a van der Waals bonded substance (for example, buffer layer 200 in FIG. 1a or FIG. 1b). The van der Waals bonded substance may include at least one or a combination of pyrolytic carbon, BN, MoS2, WSe2, ReS2, and MoTe2. Step 420 of forming a buffer layer according to an embodiment may be appropriately selected by a forming process (for example, a deposition process) using a source substance for forming (for example, depositing) the van der Waals bonded substance. The source substance according to an embodiment may be appropriately selected by the process in a phase such as a gas or a solid (powder). In an example, as an example of the source substance, pyrolytic carbon is formed by thermally decomposing a carbonaceous substance containing at least one selected from hydrocarbons (C x H y )(where x and y are natural numbers, and 1 < x < 6). For example, the hydrocarbon may be selected from propane (C3H8), butane (C4H 10 ), propylene (C3H6), or acetylene (C2H2) and combinations thereof. In an example, examples of the source substance may include, but are not limited to, a BN source substance (for example, B2H6 and / or NH3), a MoS2 source substance (for example, S powder and MoO2 powder), a WSe2 source substance (for example, WO3 powder and Se gas), a ReS2 source substance (for example, ammonium perrhenate (precursor (solid)) and S gas), or a MoTe2 source substance (for example, Te powder + MoCl5 and MoO3 powder).

[0084] Step 420 of forming the tantalum carbide layer according to one embodiment may involve forming a tantalum carbide film on a buffer layer (for example, the buffer layer 200 in Figures 1a and 1b), and the tantalum carbide film (for example, the tantalum carbide film 300 in Figures 1a and 1b) may be synthesized or deposited (for example, by CVD deposition) on at least a part or the entire buffer layer (for example, the buffer layer 200 in Figures 1a and 1b).

[0085] Step 420, in which a tantalum carbide layer is formed according to one embodiment, allows for the deposition of a tantalum carbide film (e.g., the tantalum carbide film 300 in Figures 1a and 1b) at a temperature of about 1,800°C to about 2,300°C; about 1,900°C to about 2,300°C; or about 2,000°C to about 2,300°C and a pressure of about 200 torr to about 400 torr. Step 420, in which a tantalum carbide layer is formed according to one embodiment, allows for the deposition of a tantalum carbide film by supplying raw materials for tantalum carbide film deposition at the aforementioned temperature and pressure conditions. In some examples, a raw material gas and a carrier gas may be supplied. In some examples, the raw material gas may be selected as a raw material gas suitable for the deposition process (e.g., CVD). In some examples, the raw material gas may be any raw material known in the art of this disclosure, as long as it is a raw material for supplying Ta and C (carbon), and is not specifically mentioned herein. In some examples, the atomic ratio of Ta to C in the source gas may be approximately 0.9 to approximately 1.34:1; approximately 0.1 to approximately 1.34:1; approximately 1 to approximately 1.34:1; or approximately 1.1 to approximately 1.34:1. In some examples, the carrier gas may be selected from inert gases.

[0086] After step 430, in which the tantalum carbide layer is formed according to one embodiment, the material may be cooled or heat-treated at room temperature (rt) or a temperature close to room temperature. For example, after step 430, in which the tantalum carbide layer is formed, the material may be heat-treated at a temperature of about 2,000°C to about 2,500°C, in an inert gas (e.g., Ar gas) atmosphere, for a period of about 1 hour to about 20 hours; about 2 hours to about 20 hours; about 4 hours to about 20 hours; about 6 hours to about 20 hours; about 8 hours to about 18 hours; or about 8 hours to about 15 hours. After the heat treatment, the material may be cooled at room temperature (rt) or a temperature close to room temperature.

[0087] Step 420 for forming the buffer layer and Step 430 for forming the tantalum carbide layer according to one embodiment may use various deposition processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma chemical vapor deposition, and sputtering, and preferably a CVD process may be used to form a material layer for stress relaxation.

[0088] Numerical ranges described herein may be expressed or interpreted as less than or equal to, greater than or equal to, less than, and / or greater than, for specific numerical values ​​within those ranges, without deviating from the purpose and scope of the present invention. “At least one” as described herein means one or a combination of two or more.

[0089] The present invention will be described in detail below with reference to embodiments and comparative examples. However, the embodiments described below are merely illustrative of the present invention, and the content of the present invention is not limited to the embodiments described below.

[0090] Embodiment 1

[0091] The thermal expansion coefficient of the graphite substrate is 4.5 × 10⁻⁶. -6 The solution was K, and a pyrolysis carbon (PyC) layer was deposited onto the substrate to a thickness of 5 μm by CVD deposition, after which a TaC layer was formed on the pyrolysis carbon (PyC) layer by CVD deposition.

[0092] Embodiment 2

[0093] The thermal expansion coefficient of the graphite substrate is 4.5 × 10⁻⁶.-6 The solution was K, and a pyrolysis carbon (PyC) layer was deposited onto the substrate to a thickness of 15 μm by CVD deposition. Subsequently, a TaC layer was formed on the pyrolysis carbon (PyC) layer by CVD deposition.

[0094] Embodiment 3

[0095] The thermal expansion coefficient of the graphite substrate is 4.5 × 10⁻⁶. -6 The solution was K, and a pyrolysis carbon (PyC) layer was deposited onto the substrate to a thickness of 25 μm by CVD deposition, after which a TaC layer was formed on the pyrolysis carbon (PyC) layer by CVD deposition.

[0096] Embodiment 4

[0097] The thermal expansion coefficient of the graphite substrate is 5.5 × 10⁻⁶. -6 The solution was K, and a pyrolysis carbon layer was deposited onto the substrate to a thickness of 5 μm by CVD deposition. Subsequently, a TaC layer was formed on the pyrolysis carbon (PyC) layer by CVD deposition.

[0098] Comparative Example 1

[0099] The TaC composite material was manufactured using the same method as in Embodiment 1, except that a buffer layer was not formed.

[0100] Comparative Example 2

[0101] The TaC composite material was manufactured using the same method as in Embodiment 4, except that a buffer layer was not formed.

[0102] Cross-sectional observation of the TaC composite material manufactured in Embodiment 1 was performed by measuring SEM (Scanning Electron Microscope) images. The results are shown in Figure 3. In Figure 3, it can be confirmed that a pyrolysis carbon layer / TaC layer was formed on the graphite substrate. Furthermore, as shown in Figure 1a, a vapor-deposited layer is formed in front of the substrate and buffer layer of the TaC composite material manufactured in the embodiment.

[0103] Evaporation process of the embodiment

[0104] A graphite substrate was placed in the deposition chamber, and after evacuating the chamber for 1 to 20 hours, a pyrolysis carbon (PyC) layer was deposited. Specifically, the pyrolysis carbon (PyC) layer was deposited under the conditions of a heating temperature of 1,700°C, a process pressure of 400 torr, and an atmospheric gas of N2, while supplying the raw material C3H8 with a first carrier gas of H2. Next, TaC was deposited under the conditions of a heating temperature of 2,100°C and a process pressure of 400 torr, while supplying the raw material Ta with a second carrier gas of Ar and CH4. After the deposition process, the chamber was cooled to room temperature.

[0105] Vapor deposition process of the comparative example

[0106] A graphite substrate was placed in the deposition chamber, and after evacuating it for 1 to 20 hours, TaC was deposited under heating conditions of 2,100°C and process pressure of 400 torr, while supplying the raw material Ta with a second carrier gas of Ar and CH4. After the deposition process, the chamber was cooled to room temperature.

[0107] Analysis of surface microstructure

[0108] The surface microstructure of the TaC produced in the embodiments and comparative examples was observed by SEM, and the results regarding crack width are shown in Figures 4a, 4b, 4c, and Table 1.

[0109] [Table 1]

[0110] *The average width corresponds to the average value of cracks measured at 20 points. Distortion measurement.

[0111] The distortion of the composite materials of the embodiment and comparative example was measured. The results are shown in Table 2.

[0112] Method for measuring distortion

[0113] A tantalum carbide coated product measuring φ200 × 3 mm was manufactured, and its height was measured using the upper half of a CMM measuring machine as a reference. Specifically, the product height was measured at 10 points at equal intervals of 0°, 60°, and 120°. The deviation of the 30 measured values ​​was represented using Warpage.

[0114] [Table 2]

[0115] Figures 4a, 4b, and 4c show SEM images of the TaC layer surface of the TaC composite material, representing (a) Comparative Example 1, (b) Embodiment 4, and (c) Embodiment 1, respectively. In Figures 4a, 4b, and 4c, cracks on the surface were observed through the SEM images of the composite materials of the embodiments and comparative examples. In Comparative Example 1, a large crack width occurred on the TaC surface, and when the gap between cracks was measured vertically, it was at a maximum level of 3.0 μm to 3.6 μm. This is due to the generation of internal stress between the graphite substrate and the TaC. In Embodiments 1 and 3, in which a buffer layer is introduced, when the gap between cracks is measured vertically, fine cracks of a maximum width level of 0.2 μm to 0.4 μm (Embodiment 1) occur, or no cracks are observed (Embodiment 4). In other words, a difference in thermal expansion coefficient occurs between the graphite substrate and TaC, but by introducing a buffer layer, the stress between them can be relaxed, reducing the crack width on the surface of the TaC layer, and decreasing the occurrence of cracks and distortion, thereby reducing the possibility of delamination.

[0116] In Figure 5, applying the buffer layer can reduce the width (μm) of microcracks on the surface of the TaC layer by up to 2.8 times (for example, comparing Embodiment 1 and Comparative Example 1). It is also confirmed that the size of the microcracks changes depending on the thickness of the buffer layer. In Figure 6, applying the buffer layer can reduce the warpage on the surface of the TaC layer by up to 14 times (for example, comparing Embodiment 1 and Comparative Example 1). It is also confirmed that the warpage changes depending on the thickness of the buffer layer. Table 3 shows the results of measuring stress changes with respect to the thickness of the pyrolysis carbon layer and the TaC layer.

[0117] [Table 3]

[0118] (In Table 3, "O" indicates delamination has occurred, and "x" indicates delamination has not occurred.)

[0119] Table 3 shows that the lower the thickness of the pyrolysis carbon layer (buffer layer), the greater the effect of stress relaxation between the graphite substrate and TaC, which can prevent or reduce crack formation, or reduce delamination by reducing the width of cracks.

[0120] Furthermore, if the thickness of the buffer layer exceeds a certain level, the buffer layer may expand more in the direction perpendicular to the forming surface (e.g., the thickness direction) than by lateral sliding of the forming surface due to the thermal expansion coefficient perpendicular to the forming surface (e.g., the thickness direction), potentially causing distortion and cracking.

[0121] Furthermore, when forming a buffer layer using CVD, if the buffer layer thickness is less than 1 μm or even lower, the TaC layer will not be sufficiently deposited.

[0122] The thermal expansion coefficients of the buffer layer formed on the substrates manufactured according to Embodiments 1 to 4 were measured in the X, Y, and Z axes. The thermal expansion coefficients were measured at 30 points at equal intervals in each direction, and the average value was obtained.

[0123] The coefficient of thermal expansion was measured from room temperature to 1,000°C using a thermal expansion coefficient measuring instrument (DIL 402C).

[0124] In one embodiment, a tantalum carbide composite material introduces a buffer layer for stress relaxation between a substrate (e.g., a carbon substrate) and a tantalum carbide film, thereby reducing the width of cracks in the tantalum carbide film and reducing the occurrence of distortion.

[0125] In one embodiment, a semiconductor manufacturing component can be made more stable in terms of lifespan and can be made more stable in terms of process stability and process efficiency in the semiconductor manufacturing process by applying a tantalum carbide composite material in which a buffer layer for stress relaxation is introduced between the substrate (e.g., a carbon substrate) and the tantalum carbide film.

[0126] In one embodiment, due to the difference in physical properties between the graphite substrate and the TaC coating layer, there is no stress during the high-temperature CVD process. However, stress is generated during the cooling process due to the difference in physical properties between the two materials, and in particular, significant stress can be generated due to the coefficient of thermal expansion. As a result, the generated stress is mainly manifested as warping and crack development, and the degree of damage increases with the number of times the part is used (damage accumulates as heating and cooling increase). In this case, the tantalum carbide composite material according to one embodiment can improve stress by forming a buffer layer (e.g., pyrolytic carbon) which has intermediate physical properties between graphite and TaC. This is achieved by using the difference between the coefficient of thermal expansion (e.g., average value) in the lateral direction (X axis, Y axis) and vertical direction (Z axis) of the surface on which the buffer layer (e.g., pyrolytic carbon) is formed and the coefficient of thermal expansion between the graphite substrate and the TaC coating layer to relieve stress.

[0127] In one embodiment, since a high CTE is used for final deposition of TaC, existing buffer layer materials cannot withstand the expansion of TaC. However, the composite material according to the embodiment of this disclosure forms a van der Waals bond buffer layer on a substrate in which the lateral CTE of the formation surface is lower than that of the formation surface, and is formed in a layered structure (e.g., using CVD), allowing it to withstand the expansion of TaC through internal interlayer sliding using the van der Waals bonding properties. Referring to Figures 7a and 7b, Figures 7a and 7b schematically show an example of a stress relaxation mechanism using a tantalum carbide composite material according to the embodiment of this disclosure. In Figures 7a and 7b, the van der Waals bond, which is a property of the buffer layer, has an extremely weak bonding force in the direction perpendicular to the formation surface compared to the bonding force (covalent bond) in the direction lateral to the formation surface. As a result, even if the coefficient of thermal expansion in the lateral direction of the buffer layer's formation surface is extremely low, when TaC expands due to thermal expansion, the lateral bonds of the formation surface do not break, but the vertical bonds of the formation surface break, causing internal delamination and interlayer sliding (the cut line at 200 on the right in Figure 7b). The inside of the buffer layer has a layered structure relative to the deposition surface (lines at 200 on the upper and left sides in Figures 7a and 7b) with numerous van der Waals bonding layers, so internal delamination occurs in multiple layers at numerous locations. In other words, even if one layer itself is delaminated by the numerous van der Waals bonding layers, it is not a problem, and it can effectively expand in accordance with the expansion of TaC and withstand the expansion of TaC.

[0128] In one embodiment of this disclosure, when applying a buffer layer with a material having only a difference between the substrate and / or coating layer (e.g., SiC or TaC) and CTE, a buffer layer having a layered structure due to van der Waals bonding can be utilized, and a buffer layer that can withstand the expansion of TaC through internal interlayer sliding due to van der Waals bonding properties can be used.

[0129] As described above, although the embodiments are described by limited embodiments and drawings, a person with ordinary skill in the art can make various modifications and variations from the above description. For example, the described technique may be performed in a different order than described, and / or the described components may be combined or combined in a different manner than described, or substituted or replaced by other components or equivalents, and still achieve the desired results. Therefore, the scope of the present invention is not limited to the disclosed embodiments, but is defined by the claims and equivalents thereof.

Claims

1. Substrate and A buffer layer deposited on the substrate, A tantalum carbide layer deposited on the upper surface of the buffer layer, A tantalum carbide composite material containing this material.

2. The tantalum carbide composite material according to claim 1, wherein the buffer layer contains a substance with van der Waals bonds.

3. The van der Waals bonded substance is pyrolytic carbon, BN, MoS ２ , WSe ２ ReS ２ and MoTe ２ The tantalum carbide composite material according to claim 2, comprising at least one of or a combination thereof.

4. The tantalum carbide composite material according to claim 1, wherein the buffer layer has different coefficients of thermal expansion in the lateral direction of the forming surface and in the vertical direction of the forming surface.

5. The tantalum carbide composite material according to claim 4, wherein the coefficient of thermal expansion in the direction perpendicular to the formed surface in the buffer layer is greater than the coefficient of thermal expansion in the direction transverse to the formed surface.

6. The coefficient of thermal expansion perpendicular to the surface where the buffer layer is formed is 6.0 × 10 －６ / K ~ 7.0 x 10 －６ The coefficient of thermal expansion in the lateral direction of the buffer layer formation surface is 0.2 × 10⁻¹⁰ / K, and the coefficient of thermal expansion in the lateral direction of the buffer layer formation surface is 0.2 × 10⁻¹⁰ －６ / K ~ 0.7 x 10 －６ The tantalum carbide composite material according to claim 5, wherein the value is / K.

7. The tantalum carbide composite material according to claim 4, wherein the coefficient of thermal expansion in the direction perpendicular to the surface formed in the buffer layer satisfies at least one of the following conditions i), ii), and iii). i) The thermal expansion coefficient is lower than that of the tantalum carbide layer. ii) It is higher than the thermal expansion coefficient of the base material. iii) The coefficient of thermal expansion is higher than the median value of the coefficient of thermal expansion between the substrate and the tantalum carbide layer.

8. The tantalum carbide composite material according to claim 1, wherein the thickness of the buffer layer is 1 μm to 100 μm.

9. The tantalum carbide composite material according to claim 1, wherein the thickness of the tantalum carbide layer is 1 μm to 100 μm.

10. The tantalum carbide composite material according to claim 1, wherein the buffer layer is formed in a layered structure with respect to the upper surface of the substrate.

11. The tantalum carbide composite material according to claim 1, wherein the tantalum carbide layer is crack-free.

12. The tantalum carbide composite material according to claim 1, wherein the distortion of the tantalum carbide composite material is 10 μm to 50 μm.

13. The tantalum carbide composite material according to claim 1, wherein the tantalum carbide layer contains cracks with a width of 0.3 μm to 0.6 μm.

14. The steps include preparing the substrate and The steps include forming a buffer layer on the substrate, The steps include forming a tantalum carbide layer on the buffer layer, Includes, The buffer layer contains a material with van der Waals bonds, A method for producing a tantalum carbide composite material, wherein the buffer layer is formed on at least one surface or the entire surface of the substrate.

15. The method for producing a tantalum carbide composite material according to claim 14, wherein the step of forming the tantalum carbide layer is to form a single film on the buffer layer.

16. The method for producing a tantalum carbide composite material according to claim 14, wherein the step of forming the buffer layer is to deposit the buffer layer at a temperature of 1,500°C to 1,900°C and a pressure of 500 torr to 900 torr.

17. The method for producing a tantalum carbide composite material according to claim 14, wherein the step of forming the tantalum carbide layer is to deposit a tantalum carbide film at a temperature of 1,900°C to 2,300°C and a pressure of 200 torr to 400 torr.

18. The method for producing a tantalum carbide composite material according to claim 14, wherein the steps of forming the buffer layer and forming the tantalum carbide layer are performed using a CVD process.

19. The step of forming the buffer layer involves forming a buffer layer containing a material with van der Waals bonds. The substance of the van der Waals bond is pyrolytic carbon, BN, MoS ２ , WSe ２ , ReS ２ and MoTe ２ The method for manufacturing a tantalum carbide composite material according to claim 14, comprising at least one or a combination thereof.

20. The manufacturing method described above is a method for producing a tantalum carbide composite material according to claim 14, wherein the tantalum carbide composite material according to claim 1 is produced.

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