Halogen-resistant glass material, glass coating, and manufacturing method thereof

Abstract

To provide glass material and glass coating film each of which has high resistance (halogen resistance) to corrosive halogen gas or plasma including the gas and enables suppression of generation of particles generated in a plasma processing step, and production methods of the glass material and a glass coating film, and the like.SOLUTION: Halogen-resistant glass material is provided, containing 45-52 mass% of Y, 5-10 mass% of Al, 7-12 mass% of Si, 23-30 mass% of O, and 7-12 mass% of F, glass coating film is provided, obtained by depositing the glass material, production methods of them are also provided, and a processing device comprising the glass material or the glass coating film is further provided.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a halogen-resistant glass material that can be used as a component of processing equipment such as CVD equipment and plasma etching equipment used in semiconductor manufacturing and processing steps, and that has high resistance (halogen resistance) particularly to corrosive halogen gases or plasmas containing halogen gases and can suppress the generation of particles generated in plasma processing processes; a method for manufacturing the glass material; a method for manufacturing a glass coating using the glass material; and a processing equipment including the glass material. [Background technology]

[0002] In the front-end process of semiconductor manufacturing, oxidation, lithography, etching, and film formation are repeated. Of these, the etching process may involve wet etching using chemical solutions, but in most cases, plasma etching using halogen gases or similar is used. In the film formation process, coatings of various materials, such as various metals and ceramics, are formed using physical vapor deposition (PVD) or chemical vapor deposition (CVD).

[0003] Plasma etching in semiconductor manufacturing is used in the process of creating circuits on wafers. Before plasma etching begins, the wafer is coated with a photoresist or hard mask (usually oxide or nitride), which is then exposed to light in a subsequent photolithography process to match the circuit pattern (patterning process). In plasma etching, plasma etching is performed on the patterned wafer to selectively remove the material to be etched (etching process). This patterning and etching process is repeated multiple times in the semiconductor manufacturing process. In plasma etching, the material to be etched is removed not only by the physical sputtering effect, but also by the chemical sputtering effect, as the wafer is exposed to plasma using halogen-based gases such as fluorine or chlorine.

[0004] In plasma etching, the creation of highly integrated semiconductor circuits requires the creation of a nearly vertical profile, which requires the release of high-energy, high-density ions and radicals from the plasma. This causes the plasma to erode not only the wafer being etched but also the material composing the inner surface of the etching chamber. The particles thus generated adhere to the wafer's circuits, reducing the yield of semiconductor chip manufacturing.

[0005] Generally, the chambers used for plasma etching are made of metal materials such as aluminum alloys, which do not have high resistance to exposure to halogen-based gas plasma. Therefore, when plasma resistance is required for the chamber, sintered ceramics made of aluminum oxide (Al2O3), yttrium oxide (Y2O3), etc. are often used.

[0006] However, ceramic sintered bodies form interfaces between crystal grains, which are a cause of plasma corrosion and peeling, causing particle generation. Therefore, in order to eliminate such grain boundary interfaces, it has been proposed to use glass materials that do not inherently have crystallinity, particularly glass materials containing corrosion-resistant Al2O3, CaO, MgO, ZrO2, BaO, etc. (Patent Document 1), and to form thermal sprayed films using such glass materials (Patent Document 2). [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-121047 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-253793 Summary of the Invention [Problem to be solved by the invention]

[0008] In recent years, semiconductors used in cutting-edge technology fields have become increasingly highly integrated, and the line width of circuits formed on chips is now required to be 20 nm or less. As a result, minute particles of several tens of nanometers in size, which were not a problem in the past in semiconductor manufacturing processes using plasma, have become a problem, and the required level of plasma resistance is becoming more stringent than ever before. The inventors conducted the following study on existing glass materials and found that they do not fully meet the recent required level of plasma resistance.

[0009] Specifically, the inventors conducted the following study. Three types of fused and solidified test pieces were prepared: ordinary soda-lime glass (glass A) used in construction, etc.; special soda-lime glass (glass B) containing fluorine used as glass frit; and Y2O3-Al2O3-SiO2 heat-resistant glass (glass C). For reference, two types of test pieces were also prepared: dense Al2O3 sintered body and dense Y2O3 sintered body. The raw material compositions of these test pieces are shown in Table 1. Each test piece was a square plate measuring 20 mm (length) × 20 mm (width) × 2 mm (thickness), and the surface was ground smoothly and further adjusted using a fine diamond slurry so that the surface roughness Ra (JIS B 0601) was 0.01 μm.

[0010] The five types of test pieces described above were subjected to a plasma exposure test using an inductively coupled plasma etching system to confirm the amount of wear. Here, the amount of wear was defined as the size of the step between the area masked to prevent plasma exposure and the area exposed to plasma, measured using a laser microscope. A dry etching system (manufactured by Samco Inc., product name: Model RIE-101iPH) was used for the test, and the sintered body was placed on a wafer and exposed to plasma. Plasma was generated under the conditions shown in Table 2. A schematic diagram of the dry etching system used in this test is shown in Figure 1.

[0011] The results of the plasma exposure test for each test piece are shown in Table 3. Here, the wear ratio in Table 3 is a value obtained by comparing the wear amount of each test piece with the wear amount of the Y2O3 sintered compact, and is shown assuming that the wear amount of the Y2O3 sintered compact is 1.0.

[0012] [Table 1]

[0013] [Table 2]

[0014] [Table 3]

[0015] As shown in Table 3 above, when the wear ratio due to plasma exposure is taken as 1.0 for the Y2O3 sintered compact, it was 7.5 for the Al2O3 sintered compact, 5.8 for Glass A, 2.6 for Glass B, and 2.1 for Glass C. These results show that even Glass C, which had the least wear among the glass samples, was more than twice as worn as the Y2O3 sintered compact, and that glasses with these compositions still pose issues with wear, preventing them from fully demonstrating the advantage of glass materials, which is to suppress the generation of particles caused by plasma corrosion between crystal grains.

[0016] The present invention has been made under these circumstances, and aims to provide a glass material and glass coating that can be used as components of processing equipment such as CVD equipment and plasma etching equipment used in the semiconductor manufacturing and processing steps described above, that have high resistance (halogen resistance) to corrosive halogen gases, particularly fluorine-based and chlorine-based halogen gases, or plasma containing halogen gases, and that can suppress the generation of particles generated in plasma processing processes, a method for manufacturing the glass material and glass coating, and a processing equipment equipped with the glass material and glass coating. [Means for solving the problem]

[0017] The present invention achieves the above object and has the following embodiments. (1) A halogen-resistant glass material characterized by containing 45 to 52 wt % of Y, 5 to 10 wt % of Al, 7 to 12 wt % of Si, 23 to 30 wt % of O, and 7 to 12 wt % of F. (2) The halogen-resistant glass material according to (1) above, containing 47 to 50% by weight of Y, 6 to 8% by weight of Al, 7 to 10% by weight of Si, 25 to 28% by weight of O, and 8 to 11% by weight of F. (3) The halogen-resistant glass material according to (1) or (2) above, wherein the glass material is a glass material in which part of the O contained in Y2O3-Al2O3-SiO2 glass is substituted with F. (4) The halogen-resistant glass material according to any one of (1) to (3) above, wherein the glass material is a glass coating obtained by forming a film on the glass material.

[0018] (5) A method for producing the halogen-resistant glass material according to any one of (1) to (4) above, comprising mixing Y2O3 powder, Al2O3 powder, SiO2 powder, and YF3 powder and / or AlF3 powder, and heat-treating the mixed powder at 1250°C to 1400°C. (6) A method for producing a halogen-resistant glass coating, comprising forming the halogen-resistant glass material according to any one of (1) to (4) above into a film on the surface of a substrate, and heating the glass material to a temperature equal to or higher than the melting point of the glass material to form a film. (7) A method for producing a halogen-resistant glass coating, which comprises forming a film of the halogen-resistant glass material according to any one of (1) to (4) above on the surface of a substrate by a thermal spraying method. (8) A method for producing a halogen-resistant glass coating according to (6) or (7) above, wherein after the coating is formed, the surface layer is remelted.

[0019] (9) A processing device comprising the halogen-resistant glass material according to any one of (1) to (4) above as a constituent member. (10) The processing apparatus according to (9) above, which is a CVD apparatus or a plasma etching apparatus in a semiconductor manufacturing / processing process. [Effects of the Invention]

[0020] According to the present invention, there are provided a glass material which can be used as a component of processing equipment such as CVD equipment and plasma etching equipment used in semiconductor manufacturing and processing steps, which has high resistance (halogen resistance) particularly to corrosive halogen gases such as fluorine-based and chlorine-based halogen gases or plasmas containing halogen gases, and which can suppress the generation of particles during the processing process; a method for forming a film of the glass material; a method for producing a glass coating using the glass material; and a method for producing a plasma processing equipment equipped with the glass coating. [Brief explanation of the drawings]

[0021] [Figure 1] A schematic diagram of a plasma exposure tester is shown. [Figure 2] 1 shows the transmittance of ultraviolet and visible light for the plate-shaped test pieces of Examples 1 and 2. [Figure 3a] 1 shows a bird's-eye view of the surface of the glass coating of Example 1, taken by atomic force microscopy. [Figure 3b] 1 shows a bird's-eye view of the surface of the glass coating of Example 2, taken by atomic force microscopy. [Figure 3c] 1 shows a bird's-eye view of the surface of the plate-shaped test specimen of Comparative Example 3, taken by an atomic force microscope. DETAILED DESCRIPTION OF THE INVENTION

[0022] <Glass material> The glass material of the present invention can be preferably used as a component of a CVD apparatus using halogen gas used in semiconductor manufacturing and processing processes, or a plasma etching apparatus that performs dry etching using plasma generated from halogen gas. Components constituting the CVD apparatus include chamber interior components such as a dome chamber exposed to corrosive gases such as halogen gas, and transparent components such as observation windows. Furthermore, components constituting the plasma etching apparatus include components exposed to plasma during plasma processing, such as chamber interior components and electrostatic chucks.

[0023] The glass material of the present invention is a material in which part of the O in Y2O3-Al2O3-SiO2-based glass has been substituted with F, and contains 42 to 52 wt%, preferably 45 to 52 wt%, of Y, 5 to 10 wt%, preferably 6 to 8 wt%, of Al, 7 to 12 wt%, preferably 7 to 10 wt%, of Si, 23 to 30 wt%, preferably 25 to 28 wt%, of O, and 7 to 12 wt%, preferably 8 to 11 wt% of F. It has been found that these glass materials and coatings formed using the glass materials have high corrosion resistance to halogen gases and plasmas containing halogen gases.

[0024] The glass material of the present invention and the coating film formed using the glass material have high resistance to halogen gas and plasma containing halogen gas, which was achieved by the following process. Y2O3, the main component of the glass material of the present invention, is known to be one of the materials with high resistance to halogen gases and plasmas containing halogen gases. However, when Y2O3, which has a high melting point and is difficult to sinter, is sintered alone or coated by a thermal spraying method, it is prone to develop minute open pores and cracks. When exposed to halogen gases, especially plasmas containing halogen gases, selective corrosion originating from the minute open pores and cracks occurs, resulting in accelerated wear.

[0025] Polishing is another method for smoothing the surfaces of ceramic sintered bodies and coatings. Polishing ceramic sintered bodies and ceramic aerosol deposition coatings with diamond slurry or similar can smooth the apparent surface roughness down to Ra = 0.01 μm. However, these materials cannot eliminate surface defects such as pores that occur during sintering or microcracks that occur during processing. These defects can become the starting point for wear when the surface is exposed to plasma, resulting in the generation of particles that reduce the yield of semiconductor products.

[0026] On the other hand, glass materials are generally produced by melting, and although the surface formed by solidification may have large undulations, it is smooth and is unlikely to have fine surface defects. Therefore, in order to suppress selective wear, it is thought to be extremely effective to use glass materials that are unlikely to have pores or microcracks.

[0027] As mentioned above, it is difficult to vitrify Y2O3 alone. However, by adding SiO2, a glass network forming element, together with Al2O3, it is possible to obtain Y2O3-Al2O3-SiO2-based glass. On the other hand, the surface of melted and solidified Y2O3-Al2O3-SiO2-based glass is extremely smooth, free of minute pores and cracks, and less susceptible to selective wear even when exposed to halogen gas or halogen-containing plasma. However, the corrosion resistance of the Si-O network structure, which is the matrix of the glass material, against halogen gas or halogen-containing plasma is not very high. Therefore, the inventors believed that by substituting some of the O in the Si-O network structure with F, the chemical reaction that causes structural changes could be suppressed and the corrosion resistance against halogen gas or halogen-containing plasma could be significantly improved.

[0028] The present inventors attempted to substitute a portion of the oxygen atoms in Y2O3-Al2O3-SiO2-based glass with fluorine atoms. They found that a glass material free from crystallization could be obtained in a composition range of 42-52 wt%, preferably 45-52 wt%, Y, 5-10 wt%, preferably 6-8 wt%, Al, 7-12 wt%, preferably 7-10 wt%, Si, 23-30 wt%, preferably 25-28 wt%, O, and 7-12 wt%, preferably 8-11 wt%, F. Furthermore, they found that the bulk and glass coating of the melted and solidified glass material did not contain minute open pores or cracks, and therefore were less susceptible to selective erosion by halogen gas or halogen-containing plasma. For this reason, it has been found that when bulk bodies or glass coatings of these glass materials are used as components of CVD equipment or plasma etching equipment used in semiconductor manufacturing, it is possible to significantly reduce particles that cause reduced yields in semiconductor products.

[0029] <Glass material manufacturing method> The method for producing the glass material of the present invention will now be described. The glass material of the present invention can be produced by mixing powders of metal oxides and metal fluorides as raw materials, melting, and solidifying them. Suitable combinations of raw materials include Y2O3, Al2O3, SiO2, and YF3, and Y2O3, Al2O3, SiO2, and AlF3. Of these, the combination of Y2O3, Al2O3, SiO2, and YF3 is preferred because it suppresses significant compositional fluctuations during melting. Powdered raw materials suitable for producing the glass material of the present invention preferably have a purity of 99.5% by weight or more, more preferably 99.9% by weight or more, and a particle size range of preferably 1 to 500 μm, more preferably 10 to 200 μm.

[0030] The mixing of the raw material powders of the glass material in the present invention can be carried out using a rotary ball mill, an Eirich mixer, or the like, and can be carried out either by a dry method or a wet method, so a high level of pulverization effect is not required. In methods that use a large amount of media, such as a rotary ball mill, it is preferable that the media be made of ceramics.

[0031] The mixed powder raw materials can be melted preferably by filling the raw materials into a platinum or platinum alloy crucible and heating it in an electric furnace, etc. To obtain a bulk glass from the melted raw materials, it is preferable to pour the molten glass into a water-cooled metal mold and cool it. When a glass material is used as a coating powder, the molten glass is preferably subjected to the following process: the molten glass is poured between cooled twin rolls, solidified and crushed to obtain glass flakes, and the obtained glass flakes are then crushed using a rotary ball mill or the like to obtain powder of a particle size suitable for the coating method.

[0032] <Glass coating manufacturing method> The glass coating of the present invention is produced, for example, using the glass material of the present invention as follows, preferably to a thickness of 30 to 300 μm, more preferably 50 to 200 μm. The glass material of the present invention is preferably pulverized to a particle size of 25 to 105 μm, and the glass powder is made into a paste using an aqueous solution of methyl cellulose, water-soluble phenolic resin, or the like, and this is applied to the surface of the substrate by screen printing or the like. The surface of the substrate to be applied preferably has few chips or cracks. The surface of the substrate may be processed by polishing or the like using a grinding stone, but it is preferable that dirt such as oil and grease has been sufficiently removed.

[0033] Next, the glass paste coated on the surface of the substrate is thoroughly dried, and then the ceramic substrate is placed in an electric furnace or the like and heat-treated at 1300 to 1450°C, preferably above the melting temperature of the glass material, whereby the molten glass spreads over the entire surface of the ceramic substrate, and a glass coating of the present invention having a thickness of preferably 20 to 250 μm, more preferably 50 to 150 μm, can be obtained. If the temperature in the heat treatment is too low, the glass will not spread sufficiently and the coating thickness will be uneven, and if the temperature is too high, some of the glass will run off and the coating thickness will not be sufficient.The arithmetic surface roughness Ra of the glass coating is preferably 1.0 nm or less, more preferably 0.5 nm or less.

[0034] The material of the substrate is not particularly limited, but examples thereof include those with high heat resistance and strength, such as ceramics such as mullite, alumina, and stabilized zirconia, metals such as platinum alloys and molybdenum, and heat-resistant glasses such as quartz glass and heat-resistant crystallized glass. Even when the substrate has high heat resistance strength as described above, or when it does not have sufficient heat resistance at the melting temperature of the glass material of the present invention, the glass coating of the present invention can be formed on the surface of the substrate by using the above-mentioned powder raw material of the glass material of the present invention, preferably by thermal spraying. As such thermal spraying, known methods such as plasma thermal spraying and flame thermal spraying can be used. Furthermore, when the glass coating formed on the surface of the substrate as described above does not easily become a continuous, smooth surface, it is preferable to re-melt the surface layer by irradiating the coating with a high-energy beam such as a laser beam. The re-melting treatment of the surface layer of the coating with such a high-energy beam is carried out by the glass coating absorbing light of the relevant wavelength and generating heat.

[0035] <Use of glass materials and glass coatings> The glass material of the present invention and the glass coating obtained therefrom have high resistance to halogen gases and plasmas containing halogen elements. Therefore, the glass material of the present invention and the glass coating obtained therefrom are suitable for use as components in processing equipment such as CVD equipment and plasma etching equipment in semiconductor manufacturing and processing steps. For example, in plasma etching equipment, they are used as components exposed to plasma during plasma processing, such as components inside the etching chamber and electrostatic chuck materials. [Example]

[0036] The present invention will be described in detail below with reference to examples, but the present invention is not limited to the following examples.

[0037] Example 1 Each raw material powder was weighed and mixed to obtain the glass composition shown in Table 4. The raw materials had an average particle size (D 50 ) is approximately 3 μm, Y2O3 powder (purity 99.9%), average particle size (D 50 ) is approximately 1 μm, YF3 powder (purity 99.9%), average particle size (D 50 ) of approximately 2 μm and Al2O3 powder (purity 99.9%) with an average particle size (D 50SiO2 powder (purity 99.9%) with a particle size of approximately 4 μm was used. Mixing was performed dry using a V-type mixer. The mixed powder was then filled into a crucible made of a 10% rhodium-platinum alloy and heated to 1350°C in air for 1 hour in a glass melting electric furnace.

[0038] Bulk glass was prepared by pouring molten glass into a carbon mold and cooling it. Plate-shaped test pieces measuring 20 mm (length) × 20 mm (width) × 3 mm (thickness) were cut using a diamond cutter. One surface of the 20 mm × 20 mm test piece was polished to an arithmetic mean roughness Ra of 0.01 μm, and the test piece was placed in the plasma etching apparatus shown in Figure 1 so that this surface was the exposed surface and subjected to a plasma exposure test. The plasma exposure test was conducted under the conditions shown in Table 2, and the results are shown in Table 4. A comparison of Table 4 with Table 2 reveals that the plasma resistance of this glass material is higher than that of existing glass materials.

[0039] Furthermore, the transmittance of a 20mm x 20mm x 3mm plate-shaped test piece, polished on both sides to Ra = 0.01μm, was measured using ultraviolet and visible light with wavelengths of 250 to 2500nm, and the results shown in Figure 2 were obtained. The measurements were performed using an ultraviolet and visible light spectrophotometer (JASCO Model V-670). The transmittance exceeded 80% in the wavelength range of 400nm to 2500nm, a value that allows the glass to be used for things like observation windows.

[0040] Furthermore, to obtain glass powder, the molten glass was poured onto a water-cooled metal twin roll to produce glass flakes. The glass flakes were then pulverized in a rotary ball mill and sieved to obtain coating powder with particle sizes ranging from 25 μm to 75 μm. The pulverization was performed wet using distilled water, and a pulverization pot and balls made of 99.9% pure alumina were used. This coating powder was mixed with a 2% aqueous solution of methylcellulose and applied by screen printing to the mirror-polished surface (Ra = 0.01 μm) of a plate-shaped alumina sintered body (30 mm × 30 mm × 3 mm) with a purity of 99.95% and an open porosity of 0.05%. After the coated test piece was thoroughly dried, it was heated in an electric furnace at 1300°C for 10 minutes, resulting in a glass coating with a nearly uniform surface and a thickness of 80 μm.

[0041] When the center of this glass coating was measured using atomic force microscopy (AFM), the arithmetic mean roughness Ra was 0.11 nm. When an Al2O3 sintered substrate was HIP-treated and polished as much as possible, the arithmetic mean roughness Ra was 1.14 nm, and the surface roughness of the glass coating of this example was much smaller. Figure 3(a) shows a bird's-eye view of the surface condition of the coating layer of this example, measured using atomic force microscopy.

[0042] Example 2 The plate-shaped test piece, glass powder for coating, and glass coating of Example 2 were prepared using the same powder raw materials, apparatus, and method as in Example 1, except that the glass compositions were adjusted to be those shown in Table 4. The obtained plate-shaped test piece, glass powder for coating, and glass coating were evaluated and measured in the same manner as in Example 1. The wear ratio of the plate-shaped test specimens in the plasma exposure test is shown in Table 4, the results of measuring the ultraviolet-visible light transmittance of the plate-shaped test specimens are shown in Figure 2, and a bird's-eye view of the surface condition of the glass coating obtained by measuring it using an atomic force microscope is shown in Figure 3(b). When the center of this glass coating was measured using an AFM, the arithmetic mean roughness Ra was 0.20 nm. The glass in question had a composition in which minute crystals crystallized in the glass, and was devitrified, resulting in low transmittance, but the plasma resistance, surface roughness, and thickness were comparable to those of the glass coating in Example 1.

[0043] (Examples 3 to 5) and (Comparative Example 1) The plate-shaped glass test pieces, glass powders for coating, and glass coatings of Examples 3 to 5 and Comparative Example 1 were prepared using the same powder raw materials, apparatus, and method as in Example 1, except that the glass compositions were adjusted to be those shown in Table 4. The obtained plate-shaped test pieces, glass powders, and glass coatings were evaluated and measured in the same manner as in Example 1. The wear ratios of the plate-shaped test pieces in the plasma exposure test are shown in Table 4. The plate-shaped glass test pieces of Examples 3 to 5 exhibited plasma resistance equivalent to that of Examples 1 and 2. On the other hand, the plate-shaped glass test piece of Comparative Example 1 did not exhibit plasma resistance equivalent to that of Examples 1 to 5.

[0044] (Comparative Examples 2 and 3) Plate-shaped test pieces of ceramic sintered bodies were prepared for Comparative Examples 2 and 3. The compositions of each are shown in Table 4. The test piece for Comparative Example 2 was a dense ceramic sintered body of Y2O3 (open porosity: 0.2%) that had been subjected to two-stage sintering at 1250°C and 1700°C, while the test piece for Comparative Example 3 was a commercially available dense Al2O3 sintered body (purity: 99.9%, water absorption: 0%).

[0045] These plate-shaped test pieces were subjected to plasma exposure tests under the same conditions as in Example 1, and the wear ratios were as shown in Table 4. The results in Table 4 indicate that the glass materials of Examples 1 to 5 exhibit wear ratios comparable to or greater than those of existing sintered bodies, while retaining the advantage of glass materials in suppressing particle generation due to plasma corrosion between crystal grains. Figure 3c shows a bird's-eye view of the surface condition of the plate-shaped test piece of Comparative Example 3, measured using the same method as in Example 1, measured by atomic force microscopy. When the center of this plate-shaped test piece was measured using AFM, the arithmetic mean roughness Ra was 1.14 nm. This indicates that the surface roughness of the plate-shaped test piece of Comparative Example 3 was greater than that of the glass coatings of Examples 1 and 2.

[0046] [Table 4] [Industrial Applicability]

[0047] The glass material of the present invention is effective in a wide range of equipment in the semiconductor field, including processing equipment such as CVD equipment and plasma etching equipment in semiconductor manufacturing and processing steps. [Explanation of symbols]

[0048] 1: Thermal spray sample 2: Wafer 3: Plasma 4: Anode 5: Cathode 6: Power supply 7: Plasma gas 8: Exhaust

Claims

1. A halogen-resistant glass material characterized by containing 45 to 52 wt % of Y, 5 to 10 wt % of Al, 7 to 12 wt % of Si, 23 to 30 wt % of O, and 7 to 12 wt % of F.

2. 2. The halogen-resistant glass material according to claim 1, containing 47 to 50 wt % of Y, 6 to 8 wt % of Al, 7 to 10 wt % of Si, 25 to 28 wt % of O, and 8 to 11 wt % of F.

3. The glass material is Y ２ O ３ -Al ２ O ３ -SiO ２ 3. The halogen-resistant glass material according to claim 1, wherein part of the oxygen contained in the halogen-resistant glass is substituted with fluorine.

4. 4. The halogen-resistant glass material according to claim 1, wherein the glass material is a glass coating obtained by forming a film on the glass material.

5. A method for producing a halogen-resistant glass material according to any one of claims 1 to 4, comprising the steps of: ２ O ３ powder, Al ２ O ３ powder, SiO ２ Powder, and YF ３ powder, and / or AlF ３ A manufacturing method in which powders are mixed and the mixed powder is heat-treated at 1250°C to 1400°C.

6. A method for producing a halogen-resistant glass coating, comprising applying the halogen-resistant glass material according to any one of claims 1 to 4 to the surface of a substrate and heating the glass material to a temperature equal to or higher than the melting point of the glass material to form a film.

7. A method for producing a halogen-resistant glass coating, which comprises forming a film of the halogen-resistant glass material according to any one of claims 1 to 4 on the surface of a substrate by a thermal spraying method.

8. 8. The method for producing a halogen-resistant glass coating according to claim 6, wherein after said coating is formed, the surface layer is remelted.

9. A processing apparatus comprising the halogen-resistant glass material according to any one of claims 1 to 4 as a constituent member.

10. 10. The processing apparatus according to claim 9, which is a CVD apparatus or a plasma etching apparatus used in semiconductor manufacturing and processing steps.

Images