Ceramic substrate and method for manufacturing the same, electrostatic chuck, substrate fixing device, package for semiconductor device

Abstract

To provide a ceramic substrate in which a conductor pattern containing tungsten is sintered using a sintering aid different from conventional ones.SOLUTION: A ceramic substrate includes a substrate, and a conductive pattern built into the substrate, the base is ceramic, the conductor pattern includes, as a main component, a solid solution of cobalt and iron in tungsten with a body-centered cubic lattice structure, a solid solution of cobalt and silicon in tungsten with a body-centered cubic lattice structure, a solid solution of cobalt and manganese in tungsten with a body-centered cubic lattice structure, or a solid solution of cobalt and nickel in tungsten with a body-centered cubic lattice structure.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a ceramic substrate, a method for manufacturing the same, an electrostatic chuck, a substrate fixing device, and a package for a semiconductor device.

Background Art

[0002] Conventionally, a film forming apparatus and a plasma etching apparatus used in manufacturing a semiconductor device have a stage for accurately holding a wafer in a vacuum processing chamber. As such a stage, for example, a substrate fixing device that adsorbs and holds a wafer by an electrostatic chuck mounted on a base plate has been proposed.

[0003] The electrostatic chuck is composed of a ceramic substrate having a base body and an electrostatic electrode built in the base body. The electrostatic electrode is, for example, a sintered body mainly composed of tungsten and containing nickel oxide, aluminum oxide, and silicon dioxide.

[0004] In the above sintered body, ceramics and tungsten are sintered under the same conditions. However, since tungsten has a high melting point (3300 °C or higher), it is difficult to sinter, and it is necessary to add an appropriate sintering aid. In the above sintered body, nickel oxide, aluminum oxide, and silicon dioxide function as sintering aids (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] Incidentally, some materials that function as sintering aids for tungsten are relatively difficult to obtain. Therefore, it is desirable to have a wide range of materials that can function as sintering aids, and there is a need for new sintering aids for tungsten.

[0007] The present invention has been made in view of the above points, and aims to provide a ceramic substrate in which a conductive pattern containing tungsten is sintered using a sintering aid different from that of the conventional method. [Means for solving the problem]

[0008] This ceramic substrate comprises a base body and a conductive pattern embedded in the base body, wherein the base body is Made of aluminum oxide Ceramics , or ceramics mainly composed of yttrium aluminum garnet The conductive pattern is, The main components are a body-centered cubic solid solution in which balt and manganese are dissolved in tungsten, or a body-centered cubic solid solution in which cobalt and nickel are dissolved in tungsten. and does not contain glass or aluminum oxide. . [Effects of the Invention]

[0009] According to the disclosed technology, it is possible to provide a ceramic substrate in which a conductive pattern containing tungsten is sintered using a sintering aid different from that of conventional methods. [Brief explanation of the drawing]

[0010] [Figure 1] This is a simplified cross-sectional view illustrating a substrate fixing device according to the first embodiment. [Figure 2] This is a simplified plan view illustrating a substrate fixing device according to the first embodiment. [Figure 3] This is a perspective view (part 1) illustrating the manufacturing process of an electrostatic chuck according to the first embodiment. [Figure 4] This is a perspective view (part 2) illustrating the manufacturing process of the electrostatic chuck according to the first embodiment. [Figure 5] This shows the results of the investigation into the liquefaction temperature in Example 1. [Figure 6] This is the result of the investigation into the liquefaction temperature in Example 2. [Figure 7] This is the result of the investigation into the liquefaction temperature in Example 3. [Figure 8] This is the result of the investigation into the liquefaction temperature in Example 4. [Figure 9] This is a cross-sectional view illustrating a semiconductor device package according to the second embodiment. [Figure 10] This is a plan view illustrating a semiconductor device package according to the second embodiment. [Modes for carrying out the invention]

[0011] The embodiments for carrying out the invention will be described below with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0012] <First Embodiment> [Structure of the substrate fixing device] Figure 1 is a simplified cross-sectional view illustrating a substrate fixing device according to the first embodiment. Referring to Figure 1, the substrate fixing device 1 has a base plate 10 and an electrostatic chuck 20 as its main components. The substrate fixing device 1 is a device that uses the electrostatic chuck 20 to adsorb and hold a substrate W (for example, a semiconductor wafer, etc.), which is the object to be adsorbed.

[0013] The base plate 10 is a component for mounting the electrostatic chuck 20. The thickness of the base plate 10 is, for example, about 20 to 40 mm. The base plate 10 is formed from a metal material such as aluminum or cemented carbide, or a composite material of such a metal material and a ceramic material, and can be used as an electrode for controlling plasma. For example, aluminum or an alloy thereof, with an anodized finish (insulating layer formation) on its surface, is preferably used due to its availability, ease of processing, and good thermal conductivity.

[0014] For example, by supplying a predetermined high-frequency power to the base plate 10, the energy for causing ions or the like in the generated plasma state to collide with the substrate W adsorbed on the electrostatic chuck 20 can be controlled, and the etching process can be effectively performed.

[0015] A gas supply path for introducing an inert gas for cooling the substrate W adsorbed on the electrostatic chuck 20 may be provided inside the base plate 10. When an inert gas such as He or Ar is introduced from the outside of the substrate fixing device 1 into the gas supply path and the inert gas is supplied to the back surface of the substrate W adsorbed on the electrostatic chuck 20, the substrate W can be cooled.

[0016] A refrigerant flow path may be provided inside the base plate 10. The refrigerant flow path is, for example, a hole formed annularly inside the base plate 10. When a refrigerant such as cooling water or galden is introduced from the outside of the substrate fixing device 1 into the refrigerant flow path and the refrigerant is circulated through the refrigerant flow path to cool the base plate 10, the substrate W adsorbed on the electrostatic chuck 20 can be cooled.

[0017] ]> The electrostatic chuck 20 is a part for adsorbing and holding the substrate W which is an object to be adsorbed. The planar shape of the electrostatic chuck 20 is formed according to the shape of the substrate W, and is, for example, circular. The diameter of the wafer which is the object to be adsorbed by the electrostatic chuck 20 is, for example, 8, 12, or 18 inches.

[0018] Note that "planar view" refers to viewing the object from the normal direction of the upper surface 10a of the base plate 10, and "planar shape" refers to the shape of the object viewed from the normal direction of the upper surface 10a of the base plate 10.

[0019] The electrostatic chuck 20 is provided on the upper surface 10a of the base plate 10 via an adhesive layer. The adhesive layer is, for example, a silicone-based adhesive. The thickness of the adhesive layer is, for example, about 0.1 to 2.0 mm. The adhesive layer not only bonds the base plate 10 and the electrostatic chuck 20, but also has the effect of reducing stress caused by the difference in thermal expansion coefficients between the ceramic electrostatic chuck 20 and the aluminum base plate 10. The electrostatic chuck 20 may also be fixed to the base plate 10 with screws.

[0020] The electrostatic chuck 20 is a ceramic substrate having a base body 21, an electrostatic electrode 22, and a heating element 24 as its main components. The upper surface of the base body 21 is the mounting surface 21a on which the object to be adsorbed is placed. The electrostatic chuck 20 is, for example, a Johnsen-Rabec type electrostatic chuck. However, the electrostatic chuck 20 may also be a Coulomb force type electrostatic chuck.

[0021] The substrate 21 is a dielectric. The thickness of the substrate 21 is, for example, about 5 to 10 mm, and the relative permittivity (at 1 kHz) of the substrate 21 is, for example, about 9 to 10. The substrate 21 is a ceramic mainly composed of, for example, aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium aluminum garnet (YAG), etc. Among these, it is preferable to use a ceramic made of aluminum oxide, which is easy to sinter, relatively low-cost, and has high electrical resistance. Here, "ceramics made of aluminum oxide" means ceramics in which no inorganic components other than aluminum oxide have been added.

[0022] The substrate 21 preferably has a purity of 99.5% or higher for aluminum oxide. A purity of 99.5% or higher indicates that it is formed without the addition of sintering aids. Furthermore, a purity of 99.5% or higher means that it may contain unintended impurities during the manufacturing process. The substrate 21 preferably has a relative density of 97% or higher for aluminum oxide. The substrate 21 preferably has an average particle size of aluminum oxide of 1.0 μm or more and 3.0 μm or less.

[0023] The electrostatic electrode 22 is a thin-film electrode formed by a conductive pattern and is embedded in the substrate 21. In this embodiment, the electrostatic electrode 22 is of a bipolar type and has a first electrostatic electrode 22a and a second electrostatic electrode 22b. Alternatively, a unipolar type consisting of a single electrostatic electrode may be used as the electrostatic electrode 22.

[0024] The electrostatic electrode 22 may be mainly composed of a solid solution with a body-centered cubic lattice structure in which cobalt and iron are dissolved in tungsten. The electrostatic electrode 22 may also be mainly composed of a solid solution with a body-centered cubic lattice structure in which cobalt and silicon are dissolved in tungsten. The electrostatic electrode 22 may also be mainly composed of a solid solution with a body-centered cubic lattice structure in which cobalt and manganese are dissolved in tungsten. The electrostatic electrode 22 may also be mainly composed of a solid solution with a body-centered cubic lattice structure in which cobalt and nickel are dissolved in tungsten.

[0025] Here, the main component refers to the component that accounts for 50 wt% or more of the total material constituting the electrostatic electrode 22. In the electrostatic electrode 22, it is preferable that the ratio of cobalt and iron to tungsten is 0.05 wt% to 10 wt%. The same applies to cobalt and silicon, cobalt and manganese, or cobalt and nickel, where it is preferable that the respective ratios to tungsten be 0.05 wt% to 10 wt%.

[0026] The first electrostatic electrode 22a is connected to the positive terminal side of a power supply 40a located outside the substrate fixing device 1. The second electrostatic electrode 22b is connected to the negative terminal side of a power supply 40b located outside the substrate fixing device 1. The negative terminal side of power supply 40a and the positive terminal side of power supply 40b are connected outside the substrate fixing device 1, and the connection point is at ground potential.

[0027] A positive (+) voltage is applied to the first electrostatic electrode 22a from the power supply 40a, and a negative (-) voltage is applied to the second electrostatic electrode 22b from the power supply 40b. As a result, a positive (+) charge is accumulated on the first electrostatic electrode 22a and a negative (-) charge is accumulated on the second electrostatic electrode 22b. Consequently, a negative (-) charge is induced in the portion Waa of the substrate W corresponding to the first electrostatic electrode 22a, and a positive (+) charge is induced in the portion Wb of the substrate W corresponding to the second electrostatic electrode 22b.

[0028] When the substrate W, the electrostatic electrode 22, and the ceramic portion 25 of the electrostatic chuck 20 (base 21) placed between them are considered as a capacitor, the ceramic portion 25 corresponds to the dielectric layer. The substrate W is then electrostatically attracted onto the electrostatic chuck 20 by the Coulomb force generated between the electrostatic electrode 22 and the substrate W via the ceramic portion 25. The attraction and holding force becomes stronger as the voltage applied to the electrostatic electrode 22 increases.

[0029] The heating element 24 is built into the base body 21 and is a heater that generates heat when current flows through it, heating the mounting surface 21a of the base body 21 to a predetermined temperature. The heating element 24 is positioned below the first electrostatic electrode 22a and the second electrostatic electrode 22b (on the base plate 10 side). The heating element 24 is a conductive material formed in a film shape. The heating element 24 is provided as multiple heater electrodes that enable independent heating control of multiple regions (heater zones) on the base body 21 in a planar manner.

[0030] The heating element 24 may also be provided as a single heater electrode. The heating element 24 mainly consists of, for example, a body-centered cubic lattice solid solution in which cobalt and iron are dissolved in tungsten, a body-centered cubic lattice solid solution in which cobalt and silicon are dissolved in tungsten, a body-centered cubic lattice solid solution in which cobalt and manganese are dissolved in tungsten, or a body-centered cubic lattice solid solution in which cobalt and nickel are dissolved in tungsten.

[0031] When current is supplied to the heating element 24 from a power source located outside the substrate fixing device 1, the heating element 24 generates heat, and the electrostatic chuck 20 is heated. The temperature of the electrostatic chuck 20 controls the substrate W to a predetermined temperature. The heating temperature of the electrostatic chuck 20 is set to, for example, 150°C, within the range of 50°C to 200°C.

[0032] Figure 2 is a simplified plan view illustrating a substrate fixing device according to the first embodiment. Referring to Figure 2, in the substrate fixing device 1, an electrostatic chuck 20 is placed on a disc-shaped base plate 10, and the peripheral edge of the base plate 10 is exposed around the electrostatic chuck 20. Mounting holes 11 for attaching to the chamber of a semiconductor manufacturing apparatus are arranged along the peripheral edge of the base plate 10.

[0033] Furthermore, the electrostatic chuck 20 and the base plate 10 have multiple (three in Figure 2) lift pin openings 12 in the center. Lift pins are inserted through the lift pin openings 12 to move the substrate W in the vertical direction. By raising the substrate W above the mounting surface 21a with the lift pins, automatic transport of the substrate W by the transport device becomes possible.

[0034] [Manufacturing method for electrostatic chucks] Next, the manufacturing method of the electrostatic chuck 20 will be described. Figures 3 and 4 are perspective views illustrating the manufacturing process of the electrostatic chuck according to the first embodiment.

[0035] First, as shown in Figure 3(a), a green sheet 51 made of ceramic material and organic material is prepared. The green sheet 51 is formed, for example, in the shape of a rectangular plate. The ceramic material of the green sheet 51 is made of aluminum oxide and does not contain sintering aids. The green sheet 51 becomes the base 21 on which the substrate W shown in Figure 1 is mounted after the organic components are removed and the ceramic material is sintered and densified.

[0036] Next, as shown in Figure 3(b), a green sheet 52 made of the same material and shape as the green sheet 51 is prepared, and a conductive paste is printed on the upper surface of the green sheet 52, for example by a printing method (screen printing), to form a conductive pattern 55. The conductive pattern 55 will be fired in a process described later to become the electrostatic electrode 22 shown in Figure 1. The conductive pattern 55 may also be formed on the lower surface of the green sheet 51.

[0037] For forming the conductive pattern 55, a conductive paste is used, which is made by adding cobalt oxide and iron oxide to tungsten, a conductive paste is made by adding cobalt oxide and silica to tungsten, a conductive paste is made by adding cobalt oxide and manganese oxide to tungsten, or a conductive paste is made by adding cobalt oxide and nickel oxide to tungsten. The conductive paste used for forming the conductive pattern 55 may further contain organic materials, etc.

[0038] The amount of cobalt oxide and iron oxide added is preferably, for example, 0.1 g to 10 g per 100 g of tungsten. That is, in the conductive paste, the ratio of cobalt oxide and iron oxide to tungsten is preferably 0.1 wt% to 10 wt%. When the ratio of cobalt oxide and iron oxide to tungsten is 0.1 wt% or more, the liquefaction temperature of the conductive paste can be set to approximately 1360°C to 1400°C. The same applies to cobalt oxide and silica, cobalt oxide and manganese oxide, or cobalt oxide and nickel oxide, where the respective ratios to tungsten are preferably 0.1 wt% to 10 wt%.

[0039] Even if the ratio of cobalt oxide and iron oxide, cobalt oxide and silica, cobalt oxide and manganese oxide, or cobalt oxide and nickel oxide to tungsten is greater than 10 wt%, the liquefaction temperature of the conductive paste remains approximately 1360°C to 1400°C. However, if the ratio of cobalt oxide and iron oxide, cobalt oxide and silica, cobalt oxide and manganese oxide, or cobalt oxide and nickel oxide to tungsten is greater than 10 wt%, the electrical characteristics of tungsten become less pronounced in the tungsten-containing solid solution produced by sintering the conductive paste. Therefore, it is preferable that the ratio of cobalt oxide and iron oxide, cobalt oxide and silica, cobalt oxide and manganese oxide, or cobalt oxide and nickel oxide to tungsten be 10 wt% or less. Furthermore, when simultaneously firing the conductive paste and the green sheet, it is preferable that the average particle size of the tungsten be between 0.5 μm and 3.0 μm.

[0040] Next, as shown in Figure 3(c), a green sheet 53 made of the same material and shape as the green sheet 51 is prepared, and a conductive paste is printed on the upper surface of the green sheet 53, for example by a printing method (screen printing), to form a conductive pattern 57. The conductive paste used to form the conductive pattern 57 can be the same conductive paste used to form the conductive pattern 55 described above. The green sheet 53 is used to form the heating element 24 shown in Figure 1 by firing, and will become the base 21 of the part that will be bonded to the base plate 10. The conductive pattern 57 will become the heating element 24 by firing in a process described later. The conductive pattern 57 may also be formed on the lower surface of the green sheet 52 described above.

[0041] Next, as shown in Figure 4(a), the green sheets 51 to 53 are stacked to form structure 71a. The green sheets 51 to 53 are bonded to each other by heating and applying pressure. Next, as shown in Figure 4(b), the periphery of structure 71a is cut to form a disc-shaped structure 71b.

[0042] Next, the structure 71b shown in Figure 4(b) is fired to obtain the ceramic substrate 72a shown in Figure 4(c). The firing temperature is, for example, 1600°C. In this process, the electrostatic electrode 22 is obtained by sintering the conductive pattern 55, and the heating element 24 is obtained by sintering the conductive pattern 57. The liquefaction temperature of the conductive paste, which is made by adding cobalt oxide and iron oxide, cobalt oxide and silica, cobalt oxide and manganese oxide, or cobalt oxide and nickel oxide to tungsten, is approximately 1360°C to 1400°C, so it is easily sintered at the firing temperature of the ceramic substrate 72a (for example, 1600°C). As a result, the electrostatic electrode 22 and the heating element 24 are formed, mainly composed of a solid solution in a body-centered cubic lattice structure in which cobalt and iron, cobalt and silicon, cobalt and manganese, or cobalt and nickel are solidly dissolved in tungsten.

[0043] Next, various processes are performed on the ceramic substrate 72a to complete the electrostatic chuck 20. For example, both the upper and lower surfaces of the ceramic substrate 72a are polished to form a mounting surface and an adhesive surface. In addition, the lift pin opening 12 shown in Figure 1 is formed in the ceramic substrate 72a.

[0044] The present invention will be described in more detail below with reference to examples, but the present invention is not limited in any way to these examples.

[0045] [Investigation of liquefaction temperature] As Example 1, the liquefaction temperature when 1g of cobalt oxide and 1g of iron oxide were added to 100g of tungsten and adjusted in a nitrogen and hydrogen atmosphere was calculated using Fact Stage (manufactured by Computational Mechanics Research Center Co., Ltd.). Fact Stage is software that quantitatively predicts the thermodynamic equilibrium state of multi-component systems.

[0046] The calculation results for Example 1 are shown in Figure 5. Figure 5(b) is an enlarged view of the area enclosed by the dashed line in Figure 5(a). As shown in Figure 5, calculations confirmed that sintering the material according to Example 1 forms a solid solution with a body-centered cubic lattice structure in which cobalt and iron are solidly dissolved in tungsten. In Example 1, the liquefaction temperature was approximately 1400°C.

[0047] Next, as Example 2, the liquefaction temperature when 1g of cobalt oxide and 1g of silica were added to 100g of tungsten and prepared in a nitrogen and hydrogen atmosphere was calculated using Fact Stage.

[0048] The calculation results for Example 2 are shown in Figure 6. Figure 6(b) is an enlarged view of the area enclosed by the dashed line in Figure 6(a). As shown in Figure 6, calculations confirmed that sintering the material related to Example 2 forms a solid solution with a body-centered cubic lattice structure in which cobalt and silicon are solidly dissolved in tungsten. In Example 2, the liquefaction temperature was approximately 1390°C.

[0049] Next, as Example 3, the liquefaction temperature when 1g of cobalt oxide and 1g of manganese oxide were added to 100g of tungsten and prepared in a nitrogen and hydrogen atmosphere was calculated using Fact Stage.

[0050] The calculation results for Example 3 are shown in Figure 7. Figure 7(b) is an enlarged view of the area enclosed by the dashed line in Figure 7(a). As shown in Figure 7, calculations confirmed that sintering the material according to Example 3 forms a solid solution with a body-centered cubic lattice structure in which cobalt and manganese are solidly dissolved in tungsten. In Example 3, the liquefaction temperature was approximately 1370°C.

[0051] Next, as Example 4, the liquefaction temperature when 1g of cobalt oxide and 1g of nickel oxide were added to 100g of tungsten and prepared in a nitrogen and hydrogen atmosphere was calculated using Fact Stage.

[0052] The calculation results for Example 4 are shown in Figure 8. Figure 8(b) is a magnified view of the area enclosed by the dashed line in Figure 8(a). As shown in Figure 8, calculations confirmed that sintering the material related to Example 4 forms a solid solution with a body-centered cubic lattice structure in which cobalt and manganese are solidly dissolved in tungsten. In Example 4, the liquefaction temperature was approximately 1360°C.

[0053] Thus, by adding cobalt oxide and iron oxide, cobalt oxide and silica, cobalt oxide and manganese oxide, or cobalt oxide and nickel oxide to tungsten and firing it, the liquid phase temperature can be raised to approximately 1360°C to 1400°C. This temperature is sufficiently lower than the melting point of tungsten (above 3300°C) and lower than the sintering temperature of the substrate (for example, around 1500°C to 1600°C), allowing tungsten to be easily sintered.

[0054] In other words, cobalt oxide and iron oxide, cobalt oxide and silica, cobalt oxide and manganese oxide, and cobalt oxide and nickel oxide are useful as alternative sintering aids to conventional methods used when sintering conductive patterns containing tungsten on ceramic substrates.

[0055] <Second Embodiment> The second embodiment shows an example of a semiconductor device package having a ceramic substrate as described in the first embodiment. Figure 9 is a cross-sectional view illustrating the semiconductor device package according to the second embodiment. Figure 10 is a plan view illustrating the semiconductor device package according to the second embodiment.

[0056] As shown in Figure 9, the semiconductor device package 100 includes a ceramic substrate 110, a heat sink 150, and external connection terminals 160, with the heat sink 150 being brazed to the ceramic substrate 110.

[0057] The ceramic substrate 110 has a plurality of stacked (four in this embodiment) ceramic substrates 111, 112, 113, 114, wiring patterns 121, 122, 123, 124 which are an example of a conductive pattern, and vias 132, 133, 134 that penetrate the ceramic substrates 112, 113, 114. Via 132 connects wiring patterns 121, 122 to each other, via 133 connects wiring patterns 122, 123 to each other, and via 134 connects wiring patterns 123, 124 to each other. In the ceramic substrate 110, the ceramic substrates 111 to 114 constitute the base.

[0058] As shown in Figures 8 and 9, the ceramic substrate 110 is provided with a cavity 170 for mounting the semiconductor element 200, which penetrates the central part of the ceramic substrates 112, 113, and 114. The wiring pattern 121 is arranged on the upper surface of the ceramic substrate 112 so as to surround the cavity 170. The ceramic substrate 111 has an opening 111X that exposes the wiring pattern 121.

[0059] The ceramic substrates 111-114 are ceramics made of aluminum oxide, and the wiring patterns 121-124 are mainly composed of solid solutions in a body-centered cubic lattice structure in which cobalt and iron, cobalt and silicon, cobalt and manganese, or cobalt and nickel are solidly dissolved in tungsten. The vias 132-134 are, for example, sintered bodies mainly composed of molybdenum, and also containing nickel oxide, aluminum oxide, and silicon dioxide. The ceramic substrate 110 can be manufactured by the same manufacturing method as the electrostatic chuck 20 of the first embodiment.

[0060] In the semiconductor device package 100, the semiconductor element 200 is mounted on a heat sink 150. The pads of the semiconductor element 200 are electrically connected to the wiring pattern 121 of the ceramic substrate 110 by bonding wires or the like. As a result, the semiconductor element 200 is connected to the external connection terminal 160 via the wiring patterns 121-124 and vias 132-134.

[0061] In the semiconductor device package 100, the wiring patterns 121 to 124 can be formed by sintering a conductive paste containing cobalt oxide and iron oxide added to tungsten, a conductive paste containing cobalt oxide and silica added to tungsten, a conductive paste containing cobalt oxide and manganese oxide added to tungsten, or a conductive paste containing cobalt oxide and nickel oxide added to tungsten. This allows tungsten to be easily sintered, similar to the first embodiment.

[0062] Although preferred embodiments have been described in detail above, the invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

[0063] For example, in the first embodiment, the components and arrangement included in the substrate fixing device may be changed as appropriate.

[0064] Furthermore, in the first embodiment, the heating element 24 may be disposed between the electrostatic chuck 20 and the base plate 10. Alternatively, the heating element 24 may be installed inside the base plate 10. Alternatively, the heating element 24 may be attached externally below the electrostatic chuck.

[0065] Furthermore, the substrate fixing apparatus according to the first embodiment is applicable to semiconductor manufacturing equipment, such as dry etching equipment (for example, parallel plate type reactive ion etching (RIE) equipment).

[0066] Furthermore, in addition to semiconductor wafers (such as silicon wafers), other examples of objects to be adsorbed by the substrate fixing device according to the first embodiment include glass substrates used in the manufacturing process of liquid crystal panels and the like. [Explanation of Symbols]

[0067] 1 Board fixing device 10 base plate 11 mounting holes 12. Opening for lift pin 20 Electrostatic Chuck 21 Base 22 Electrostatic electrodes 22a First electrostatic electrode 22b Second electrostatic electrode 24 Heating element 25 Ceramics Section 40a, 40b power supply 51, 52, 53 Green Seats 55, 57 Conductive Patterns 71a, 71b structure 72a Ceramic substrate 100 Semiconductor device package 110 Ceramic Substrates 111-114 Ceramic substrate Wiring patterns 121-124 132-134 Beer

Claims

1. Substrate and, The substrate has a conductive pattern embedded within it, The substrate is a ceramic made of aluminum oxide, or a ceramic mainly composed of yttrium aluminum garnet. The conductive pattern is a ceramic substrate mainly composed of a body-centered cubic lattice solid solution in which cobalt and manganese are solidly dissolved in tungsten, or a body-centered cubic lattice solid solution in which cobalt and nickel are solidly dissolved in tungsten, and does not contain glass or aluminum oxide.

2. The ceramic substrate according to claim 1, wherein the substrate is a ceramic made of aluminum oxide.

3. The ceramic substrate according to claim 2, wherein the substrate has a purity of 99.5% or more of the aluminum oxide.

4. The ceramic substrate according to claim 2, wherein the substrate has a relative density of 97% or more with respect to aluminum oxide.

5. The ceramic substrate according to claim 2, wherein the substrate has an average particle size of aluminum oxide of 1.0 μm or more and 3.0 μm or less.

6. A semiconductor device package having a ceramic substrate according to any one of claims 1 to 5.

7. An electrostatic chuck in which the conductive pattern is an electrostatic electrode, in a ceramic substrate according to any one of claims 1 to 5.

8. base plate and A substrate fixing device having an electrostatic chuck according to claim 7 mounted on one side of the base plate.

9. A method for manufacturing a ceramic substrate having a substrate and a conductive pattern embedded in the substrate, The substrate is a ceramic made of aluminum oxide, or a ceramic mainly composed of yttrium aluminum garnet. The process involves forming a conductive pattern on the upper surface of a green sheet using a conductive paste that does not contain glass or aluminum oxide, which is made by adding cobalt oxide and manganese oxide to tungsten, or by adding cobalt oxide and nickel oxide to tungsten, which is made by making a conductive paste that does not contain glass or aluminum oxide. A method for manufacturing a ceramic substrate, comprising the steps of firing the green sheet and the conductive pattern to form the substrate and the conductive pattern.

10. The method for manufacturing a ceramic substrate according to claim 9, wherein in the conductive paste, the ratio of cobalt oxide and manganese oxide, or cobalt oxide and nickel oxide to tungsten, is 0.1 wt% or more and 10 wt% or less.

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