Semiconductor devices, temperature detection systems, and vehicles

Abstract

This semiconductor device comprises: a power element; a drive circuit configured to drive the power element; and a temperature detection circuit configured to be able to detect a temperature of 0ºC or lower. The temperature detection circuit is configured to generate and output, on the basis of a voltage signal which depends on temperature, a detection signal having a lower temperature change rate than that of the voltage signal.

Description

Technical Field

[0001] The invention disclosed in this specification relates to a semiconductor device, a temperature detection system, and a vehicle.

Background Art

[0002] Conventionally, various semiconductor devices called IPMs (Intelligent Power Modules) have been developed. An IPM includes a power element and a drive circuit that drives the power element. Since the power element generates heat during operation, there is an IPM that incorporates a temperature detection circuit for detecting the ambient temperature of the power element.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] For example, the IPM disclosed in Patent Document 1 includes a temperature measurement circuit for measuring the chip temperature. However, the temperature measurement circuit is configured to be able to measure only temperatures between 15°C and 150°C. Therefore, the IPM disclosed in Patent Document 1 has a problem that it cannot detect the chip temperature at startup when used, for example, in a cold region.

Means for Solving the Problems

[0005] The semiconductor device disclosed in this specification includes a power element, a drive circuit configured to drive the power element, and a temperature detection circuit configured to be able to detect temperatures of 0°C or lower. The temperature detection circuit is configured to generate and output a detection signal having a smaller temperature change rate than the voltage signal based on a voltage signal that depends on temperature.

[0006] The temperature sensing system disclosed herein comprises the semiconductor device and a computer including an analog input port configured to receive an analog voltage signal.

[0007] The vehicles disclosed herein include the above-mentioned semiconductor devices. [Effects of the Invention]

[0008] According to the semiconductor device, temperature detection system, and vehicle disclosed herein, the internal temperature of the semiconductor device can be detected when the semiconductor device is started up under a wide range of operating environments. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 shows a schematic configuration of a motor control system according to one embodiment. [Figure 2] Figure 2 shows an example configuration of a temperature detection circuit. [Figure 3] Figure 3 is a graph showing the temperature characteristics of the voltage signal and the output signal. [Figure 4] Figure 4 is an external view of a vehicle according to one embodiment. [Modes for carrying out the invention]

[0010] Figure 1 is a diagram showing a schematic configuration of a motor control system according to one embodiment. The motor control system SYS1 shown in Figure 1 comprises an MCU (Micro Controller Unit) 1, an IPM 2, and a three-phase motor 3. The MCU 1 is an example of a computer. The IPM 2 is an example of a semiconductor device. In this embodiment, the load connected to the semiconductor device is a motor, but the load connected to the semiconductor device is not limited to a motor.

[0011] The motor control system SYS1 includes a temperature detection system SYS2. The temperature detection system SYS2 includes an MCU1 and an IPM2.

[0012] The MCU1 is equipped with ports P1 to P7. Ports P1 to P6 are digital output ports configured to output the first to sixth control signals, which are digital voltage signals such as PWM (Pulse Width Modulation) control signals. Port P7 is an analog input port configured to receive analog voltage signals.

[0013] IPM2 includes terminals T1 to T18.

[0014] The first terminal T1 is configured to receive the first power supply voltage VCC1. The second to fourth terminals T2 to T4 are configured to receive the first to third control signals described above, respectively. The fifth terminal T5 is configured to be connected to ground potential.

[0015] Terminal 6 T6 is configured to receive the second power supply voltage VCC2. Terminals 7 through 9 T7 through T9 are configured to receive the fourth through sixth control signals described above, respectively. Terminal 10 T10 is configured to be connected to ground potential.

[0016] The 11th terminal T11 is configured to output the output signal (detection signal) VOT of the temperature detection circuit 27, which will be described later. The 11th terminal T11 of the IPM2 and the 7th port P7 of the MCU1 are connected only by a connecting wire. In other words, there is no conversion circuit between the 11th terminal T11 of the IPM2 and the 7th port P7 of the MCU1 to convert the output signal VOT of the temperature detection circuit 27, which will be described later. Since the temperature detection system SYS2 does not need to have multiple conversion circuits to convert the output signal VOT of the temperature detection circuit 27, the number of components can be reduced, and miniaturization and cost reduction can be achieved.

[0017] The 12th terminal T12 is configured to input the third power supply voltage VCC3. The 13th terminal T13 is configured to be connected to the U-phase terminal of the three-phase motor 3. The 14th terminal T14 is configured to be connected to the V-phase terminal of the three-phase motor 3. The 15th terminal T15 is configured to be connected to the W-phase terminal of the three-phase motor 3. The 16th to 18th terminals T16 to T18 may each be configured to be connected to the ground potential as shown in, for example, FIG. 1, or may be configured to be connected to the ground potential via a filter circuit, for example.

[0018] The first to third power supply voltages VCC1 to VCC3 are each a DC voltage. The first to third power supply voltages VCC1 to VCC3 may each be voltages of different values, or at least two of them may be voltages of the same value.

[0019] IPM2 further includes a first drive circuit 21, IGBTs (Insulated Gate Bipolar Transistors) 22u, 22v, and 22w, and diodes 23u, 23v, and 23w. In the present embodiment, the power element provided in the semiconductor device is an IGBT, but a power element other than the IGBT may be provided in the semiconductor device.

[0020] The first drive circuit 21 is connected to the first to fifth terminals T1 to T5 inside the IPM2. The first drive circuit 21 operates based on the voltage between the first power supply voltage VCC1 and the ground potential. The first drive circuit 21 generates a first drive signal based on the first control signal input to the second terminal T2, and supplies the first drive signal to the gate of the IGBT 22u. The first drive circuit 21 generates a second drive signal based on the second control signal input to the third terminal T3, and supplies the second drive signal to the gate of the IGBT 22v. The first drive circuit 21 generates a third drive signal based on the third control signal input to the fourth terminal T4, and supplies the third drive signal to the gate of the IGBT 22w.

[0021] The collectors of IGBTs 22u, 22v, and 22w and the cathodes of diodes 23u, 23v, and 23w are connected to the 12th terminal T12 inside the IPM2. The emitter of IGBT 22u and the anode of diode 23u are connected to the 13th terminal T13 inside the IPM2. The emitter of IGBT 22v and the anode of diode 23v are connected to the 14th terminal T14 inside the IPM2. The emitter of IGBT 22w and the anode of diode 23w are connected to the 15th terminal T15 inside the IPM2.

[0022] The IPM2 further includes a second drive circuit 24, IGBTs 25u, 25v, and 25w, and diodes 26u, 26v, and 26w.

[0023] The second drive circuit 24 is connected to the 6th to 10th terminals T6 to T10 inside the IPM2. The second drive circuit 24 operates based on the voltage between the second power supply voltage VCC2 and the ground potential. The second drive circuit 24 generates a fourth drive signal based on the fourth control signal input to the 7th terminal T7 and supplies the fourth drive signal to the gate of IGBT 25u. The second drive circuit 24 generates a fifth drive signal based on the fifth control signal input to the 8th terminal T8 and supplies the fifth drive signal to the gate of IGBT 25v. The second drive circuit 24 generates a sixth drive signal based on the sixth control signal input to the 9th terminal T9 and supplies the sixth drive signal to the gate of IGBT 25w.

[0024] The collector of IGBT25u and the cathode of diode 26u are connected to terminal 13 T13 inside the IPM2. The emitter of IGBT25u and the anode of diode 26u are connected to terminal 16 T16 inside the IPM2. The collector of IGBT25v and the cathode of diode 26v are connected to terminal 14 T14 inside the IPM2. The emitter of IGBT25v and the anode of diode 26v are connected to terminal 17 T17 inside the IPM2. The collector of IGBT25w and the cathode of diode 26w are connected to terminal 15 T15 inside the IPM2. The emitter of IGBT25w and the anode of diode 26w are connected to terminal 18 T18 inside the IPM2.

[0025] IPM2 is further equipped with a temperature detection circuit 27.

[0026] The temperature detection circuit 27 is configured to detect temperatures below 0°C. Therefore, the temperature detection circuit 27 can detect the internal temperature of the IPM2 at startup, for example, in cold regions. In other words, the IPM2 can detect its internal temperature when it starts up under a wide range of operating environments. In this embodiment, the temperature detection circuit 27 is configured to output a positive output signal VOT when it detects a temperature of 0°C. This allows a general-purpose device (e.g., a general-purpose computer) to be used as an external device to process the detection signal output from the temperature detection circuit, and the detection signal when a temperature of 0°C is detected can be processed by the general-purpose device.

[0027] The temperature detection circuit 27 is preferably configured to detect a temperature of -25°C. If the temperature detection circuit 27 can detect a temperature of -25°C, it can detect the internal temperature of the IPM2 at startup, even in winter in most cold regions of Japan. In this case, the temperature detection circuit 27 is preferably configured to output a positive output signal VOT when it detects a temperature of -25°C.

[0028] It is even more preferable that the temperature detection circuit 27 be configured to detect a temperature of -40°C. If the temperature detection circuit 27 is capable of detecting a temperature of -40°C, it can detect the internal temperature of the IPM2 at startup, even in winter in most cold regions around the world. In this case, the temperature detection circuit 27 should be configured to output a positive output signal VOT when it detects a temperature of -40°C.

[0029] The temperature detection circuit 27 is configured to detect a temperature of 150°C. Therefore, the temperature detection circuit 27 is configured to use IGBTs 22u, 22v, 22w, 25u, 25v and 2 5 Even if the internal temperature of the IPM2 rises due to the heat generated by w, the internal temperature of the IPM2 can still be detected.

[0030] The temperature detection circuit 27 does not include a thermistor. Therefore, the IPM2 has only one terminal configured to output the output signal VOT of the temperature detection circuit 27. Since the IPM2 does not need to have multiple terminals configured to output the output signal VOT of the temperature detection circuit 27, it can be made smaller and less expensive.

[0031] It is preferable that the temperature detection circuit 27 is composed entirely of integrated circuits. By composing the entire temperature detection circuit 27 with integrated circuits, the temperature detection circuit 27 can be made smaller and less expensive.

[0032] Figure 2 shows an example configuration of the temperature detection circuit 27. The temperature detection circuit 27 shown in Figure 2 comprises a voltage signal generation circuit 271 and a conversion circuit 272.

[0033] The voltage signal generation circuit 271 is configured to generate a temperature-dependent voltage signal VT. The voltage signal generation circuit 271 comprises an operational amplifier OP1 and resistors R1 and R2. The non-inverting input terminal of operational amplifier OP1 is connected to the output terminal of operational amplifier OP1. The inverting input terminal of operational amplifier OP1 is connected to the output terminal of operational amplifier OP1 via resistor R1. In addition, the inverting input terminal of operational amplifier OP1 is connected to ground potential via resistor R2. The input stage of operational amplifier OP1 is composed of differential pair transistors with different threshold voltages. The temperature change rate (temperature coefficient) of the voltage signal VT is approximately constant within the temperature detection range of the temperature detection circuit 27 (-40°C to 150°C).

[0034] The conversion circuit 272 is configured to convert the voltage signal VT into an output signal VOT. The conversion circuit 272 comprises a bandgap type reference voltage generation circuit BG1, operational amplifiers OP2 to OP4, and resistors R3 to R8.

[0035] The bandgap-type reference voltage generation circuit BG1 is a DC voltage source that uses the bandgap voltage to generate a reference voltage that is less affected by temperature, and outputs this reference voltage. The negative terminal of the bandgap-type reference voltage generation circuit BG1 is connected to ground potential.

[0036] The positive terminal of the bandgap reference voltage generation circuit BG1 is connected to the non-inverting input terminal of the operational amplifier OP2. In other words, the reference voltage is supplied from the bandgap reference voltage generation circuit BG1 to the non-inverting input terminal of the operational amplifier OP2.

[0037] The inverting input terminal of op-amp OP2 is connected to the output terminal of op-amp OP2 via resistor R3. The inverting input terminal of op-amp OP2 is also connected to ground potential via resistor R4. A bias voltage VBIAS, which is less susceptible to temperature changes, is output from the output terminal of op-amp OP2.

[0038] The bias voltage VBIAS is divided by resistors R5 and R6. The divided bias voltage VBIAS is supplied to the non-inverting input terminal of the operational amplifier OP3. The inverting input terminal of the operational amplifier OP3 is connected to the output terminal of the operational amplifier OP3. The bandgap type reference voltage generation circuit BG1, operational amplifier OP2, and resistors R3 to R5 constitute the DC bias voltage supply section. The operational amplifier OP3 constitutes a voltage follower circuit. The DC bias voltage VREF supplied from the DC bias voltage supply section is supplied to the voltage feedback type operational amplifier, which will be described later, via the voltage follower circuit.

[0039] The output terminal of operational amplifier OP3 is connected to the inverting input terminal of operational amplifier OP4 via resistor R8. The inverting input terminal of operational amplifier OP4 is connected to the output terminal of operational amplifier OP4 via resistor R7. The output signal VOT of the temperature detection circuit 27 is output from the output terminal of operational amplifier OP4. Operational amplifier OP4, resistors R7 and R8 constitute a voltage feedback operational amplifier.

[0040] Figure 3 is a graph showing the temperature characteristics of the voltage signal VT and the output signal VOT of the temperature detection circuit 27. The horizontal axis of the graph in Figure 3 represents temperature. The vertical axis of the graph in Figure 3 represents the voltage value of the signal.

[0041] As shown in Figure 3, the rate of temperature change (temperature coefficient) of the output signal VOT of the temperature detection circuit 27 is smaller than the rate of temperature change (temperature coefficient) of the voltage signal VT. More specifically, within the temperature detection range of the temperature detection circuit 27 (-40°C to 150°C), the rate of temperature change (temperature coefficient) of the output signal VOT of the temperature detection circuit 27 is smaller than the rate of temperature change (temperature coefficient) of the voltage signal VT.

[0042] Furthermore, within the temperature detection range of the temperature detection circuit 27 (-40°C to 150°C), the rate of temperature change (temperature coefficient) of the output signal VOT of the temperature detection circuit 27 is approximately constant, and the rate of temperature change (temperature coefficient) of the voltage signal VT is also approximately constant. Therefore, at a typical temperature (for example, 25°C) within the temperature detection range of the temperature detection circuit 27 (-40°C to 150°C), if the rate of temperature change (temperature coefficient) of the output signal VOT of the temperature detection circuit 27 is smaller than the rate of temperature change (temperature coefficient) of the voltage signal VT, then within the temperature detection range of the temperature detection circuit 27 (-40°C to 150°C), the rate of temperature change (temperature coefficient) of the output signal VOT of the temperature detection circuit 27 can be considered to be smaller than the rate of temperature change (temperature coefficient) of the voltage signal VT.

[0043] By adjusting the circuit constants of the conversion circuit 272, the rate of temperature change (temperature coefficient) of the output signal VOT of the temperature detection circuit 27 can be adjusted, and the position of the intersection point between the output signal VOT of the temperature detection circuit 27 and the voltage signal VT in the graph shown in Figure 3 can also be adjusted.

[0044] The temperature detection circuit 27 shown in Figure 2 is configured to include the voltage signal generation circuit 271 and conversion circuit 272 described above, so the voltage value range of the output signal VOT of the temperature detection circuit 27 can be easily adjusted within the temperature detection range (-40°C to 150°C).

[0045] Furthermore, since the temperature change rate (temperature coefficient) of the output signal VOT of the temperature detection circuit 27 is smaller than the temperature change rate (temperature coefficient) of the voltage signal VT, the voltage value range of the output signal VOT of the temperature detection circuit 27 can be narrowed within the temperature detection range (-40°C to 150°C) of the temperature detection circuit 27. As a result, even if the temperature detection range (-40°C to 150°C) of the temperature detection circuit 27 is wide, the output signal VOT of the temperature detection circuit 27 can be directly supplied to the analog input port of the computer, for example, as in this embodiment.

[0046] While the devices or equipment on which IPM2 is installed are not limited, it is particularly useful to install IPM2 in devices or equipment where the temperature in the operating environment changes significantly.

[0047] The motor control system SYS1 shown in Figure 1 can be installed, for example, in the vehicle X shown in Figure 4. When the motor control system SYS1 shown in Figure 1 is installed in the vehicle X, the three-phase motor 3 can be, for example, a motor installed inside a compressor, which is a component of an in-vehicle air conditioner. For example, the MCU 1 can determine, based on the output signal VOT of the temperature detection circuit 27, whether the internal temperature of the IPM 2 is above the lower limit temperature at which it is safe to start the compressor.

[0048] Furthermore, the configuration of the present invention can be modified in various ways without departing from the spirit of the invention, in addition to the embodiments described above. The embodiments described above should be considered to be illustrative and not restrictive in all respects, and the technical scope of the present invention is indicated by the claims, not by the description of the embodiments described above, and should be understood to include all modifications that fall within the meaning and scope equivalent to the claims.

[0049] The semiconductor device (2) described above comprises power elements (22u, 22v, 22w, 25u, 25v, 25w), drive circuits (21, 24) configured to drive the power elements, and a temperature detection circuit (27) configured to detect temperatures of 0°C or lower. The temperature detection circuit is configured to generate and output a detection signal with a smaller rate of temperature change than the voltage signal, based on a temperature-dependent voltage signal (first configuration).

[0050] The semiconductor device with the first configuration described above can detect the internal temperature of the semiconductor device at startup, for example, in cold regions. In other words, the semiconductor device with the first configuration described above can detect the internal temperature of the semiconductor device when it starts up under a wide range of operating environments.

[0051] In the semiconductor device having the first configuration described above, the temperature detection circuit may be configured to output a detection signal that is a positive value when it detects a temperature of 0°C (second configuration).

[0052] Using the semiconductor device described in the second configuration above, a general-purpose device (e.g., a general-purpose computer) can be used as an external device to process the detection signal output from the temperature detection circuit, and the detection signal when a temperature of 0°C is detected can be processed by the general-purpose device.

[0053] In the semiconductor device having the second configuration described above, the temperature detection circuit outputs the detection signal, which is a positive value, when it detects a temperature of -25°C. do It may also be a configuration that is set up in such a way (a third configuration).

[0054] The semiconductor device with the third configuration described above can detect the internal temperature of the semiconductor device at startup, even in winter in most cold regions of Japan.

[0055] In the semiconductor device having the third configuration described above, the temperature detection circuit outputs the detection signal, which is a positive value, when it detects a temperature of -40°C. do It may also be a configuration that is set up in such a way (a fourth configuration).

[0056] The semiconductor device with the fourth configuration described above can, for example, detect the internal temperature of the semiconductor device at startup, even in winter in most cold regions around the world.

[0057] In a semiconductor device having any of the first to fourth configurations described above, there may also be a configuration (fifth configuration) that has only one terminal configured to output the detection signal.

[0058] The semiconductor device with the fifth configuration described above can be miniaturized and cost-effective because it can reduce the number of terminals.

[0059] In a semiconductor device having any of the first to fifth configurations described above, the temperature detection circuit may also have a sixth configuration, comprising a voltage signal generation circuit (271) configured to generate the voltage signal and a conversion circuit (272) configured to convert the voltage signal into the detection signal.

[0060] The semiconductor device with the sixth configuration described above can easily adjust the voltage range of the detection signal within the temperature detection range of the temperature detection circuit. Furthermore, the semiconductor device with the sixth configuration described above can narrow the voltage range of the detection signal within the temperature detection range of the temperature detection circuit.

[0061] In the semiconductor device having the sixth configuration described above, the conversion circuit may include a voltage feedback operational amplifier, the voltage signal may be input to the voltage feedback operational amplifier, and the detection signal may be output from the voltage feedback operational amplifier (seventh configuration).

[0062] The semiconductor device, which is the seventh configuration described above, can achieve the conversion from a voltage signal to a detection signal with a simple circuit configuration.

[0063] In the semiconductor device having the seventh configuration described above, the conversion circuit may also include a DC bias voltage supply unit configured to supply a DC bias voltage to the voltage feedback type operational amplifier (eighth configuration).

[0064] The semiconductor device, which is the eighth configuration described above, allows for adjustment of the detection signal value with a simple circuit configuration.

[0065] In the semiconductor device having the eighth configuration described above, the conversion circuit may also have a configuration (ninth configuration) that includes a voltage follower circuit provided between the voltage feedback operational amplifier and the DC bias voltage supply unit.

[0066] The semiconductor device with the ninth configuration described above can improve the voltage characteristics in the conversion circuit.

[0067] The temperature detection system (SYS2) described above has a configuration (the 10th configuration) comprising a semiconductor device having one of the first to 9 configurations described above, and a computer (1) including an analog input port (P7) configured to receive an analog voltage signal.

[0068] The temperature detection system, which is the 10th configuration described above, can detect the internal temperature of a semiconductor device at startup, for example, in a cold region. 10 The temperature detection system, with its configuration described above, can detect the internal temperature of a semiconductor device when it starts up under a wide range of operating conditions. Furthermore, since there is no need to provide a conversion circuit between the terminals of the temperature detection circuit and the analog input port of the computer, it can be miniaturized and cost-effective.

[0069] The vehicle (X) described above has a configuration (11th configuration) that includes a semiconductor device having one of the configurations described in the 1st to 9th above.

[0070] A vehicle with the above 11th configuration can, for example, detect the internal temperature of the semiconductor device at startup in cold regions. That is, the above 11 This is the configuration. vehicle This allows for the detection of the internal temperature of a semiconductor device when it starts up under a wide range of operating environments. [Explanation of Symbols]

[0071] 1 MCU 2 IPM 3. Three-phase motor 21 First drive circuit 22u, 22v, 22w, 25u, 25v, 25w IGBT 23u, 23v, 23w, 26u, 26v, 26w diodes 24 Second drive circuit 27 Temperature detection circuit 271 Voltage signal generation circuit 272 Conversion Circuit BG1 Bandgap type reference voltage generation circuit OP1~OP4 Operational Amplifiers R1~R8 Resistors P1-P7: Ports 1-7 SYS1 Motor Control System SYS2 Temperature Detection System T1~T18 Terminals 1~18 X Vehicle

Claims

1. Power element and A drive circuit configured to drive the aforementioned power element, It includes a temperature detection circuit configured to detect temperatures below 0°C, The temperature detection circuit is configured to generate and output a detection signal with a smaller rate of temperature change than the voltage signal, based on a temperature-dependent voltage signal. A semiconductor device in which the temperature change rate of the detection signal is the absolute value of the change in the detection signal with respect to the change in temperature, and the temperature change rate of the voltage signal is the absolute value of the change in the voltage signal with respect to the change in temperature.

2. The semiconductor device according to claim 1, wherein the temperature detection circuit is configured to output the detection signal which is a positive value when it detects a temperature of 0°C.

3. The semiconductor device according to claim 2, wherein the temperature detection circuit is configured to output the detection signal which is a positive value when a temperature of -25°C is detected.

4. The semiconductor device according to claim 3, wherein the temperature detection circuit is configured to output the detection signal which is a positive value when a temperature of -40°C is detected.

5. The semiconductor device according to any one of claims 1 to 4, comprising only one terminal configured to output the aforementioned detection signal.

6. The temperature detection circuit is A voltage signal generation circuit configured to generate the aforementioned voltage signal, A semiconductor device according to any one of claims 1 to 5, comprising a conversion circuit configured to convert the voltage signal into the detection signal.

7. The conversion circuit includes a voltage feedback operational amplifier. The aforementioned voltage signal is input to the voltage feedback type operational amplifier. The semiconductor device according to claim 6, wherein the detection signal is output from the voltage feedback operational amplifier.

8. The semiconductor device according to claim 7, wherein the conversion circuit includes a DC bias voltage supply unit configured to supply a DC bias voltage to the voltage feedback type operational amplifier.

9. The semiconductor device according to claim 8, wherein the conversion circuit includes a voltage follower circuit provided between the voltage feedback operational amplifier and the DC bias voltage supply unit.

10. A semiconductor device according to any one of claims 1 to 9, A temperature sensing system comprising a computer including an analog input port configured to receive an analog voltage signal.

11. A vehicle comprising a semiconductor device according to any one of claims 1 to 9.

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