Temperature control device, substrate processing device, and liquid volume control method

Abstract

This temperature control device includes: a main tank storing a heat medium; a first sub-tank positioned above a reference position of a liquid surface in the main tank; a second sub-tank positioned below the reference position in the main tank; a first communication tube comprising a first valve and connecting the first sub-tank and the main tank; a second communication tube comprising a second valve and connecting the second sub-tank and the main tank; and a control unit. The control unit controls the first valve and the second valve in accordance with the liquid amount in the main tank.

Description

Technical Field

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[0005]

[0001] The present disclosure relates to a temperature control device, a substrate processing device, and a liquid volume control method.

Background Art

[0002] In a substrate processing device, temperature control is performed by a chiller that circulates a heat transfer medium through a flow path in a mounting table by a pump. In the operation of the chiller, the liquid volume in the tank is managed. For example, it has been proposed that a reserve tank is arranged above a cooling side tank and a heating side tank, and the reserve tank is connected to the cooling side tank and the heating side tank by pipes so that the heat transfer medium can be replenished (Patent Document 1). Further, it has been proposed to supply a heat transfer medium from a common tank connected to a low-temperature side storage tank and a high-temperature side storage tank (Patent Document 2).

Prior Art Documents

Patent Documents

[0006] According to this disclosure, the amount of heat transfer fluid can be automatically controlled. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus in one embodiment of the present disclosure. [Figure 2] Figure 2 shows an example of a temperature control device in this embodiment. [Figure 3] Figure 3 is a flowchart showing an example of the liquid volume control process in this embodiment. [Figure 4] Figure 4 illustrates an example of the operation when replenishing the heat transfer medium in this embodiment. [Figure 5] Figure 5 illustrates an example of the operation during the recovery of the heat transfer medium in this embodiment. [Figure 6] Figure 6 shows an example of the arrangement of the sub-tank in Modification 1. [Figure 7] Figure 7 shows an example of the pump connection in Modification Example 2. [Figure 8] Figure 8 shows an example of a temperature control device in modified example 3. [Figure 9] Figure 9 shows an example of a temperature control device in modified example 4. [Figure 10] Figure 10 shows an example of the connection between sub-tanks in Modification 5. [Modes for carrying out the invention]

[0008] Embodiments of the temperature control device, substrate processing device, and liquid volume control method disclosed below will be described in detail below with reference to the drawings. However, the disclosed technology is not limited to the embodiments described below.

[0009] In chiller operation, when the amount of heat transfer fluid in the tank decreases, the substrate processing machine is temporarily stopped and an operator replenishes the heat transfer fluid in the tank. Furthermore, when operators replenish the heat transfer fluid manually, a wide range of appropriate fluid levels is required due to errors in the replenishment process. Therefore, there is a need for highly automated management of the heat transfer fluid level without stopping the substrate processing machine.

[0010] [Configuration of substrate processing apparatus 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus in one embodiment of the present disclosure. The substrate processing apparatus 1 is a plasma etching apparatus equipped with, for example, parallel plate electrodes. The substrate processing apparatus 1 comprises an apparatus body 10 and a control device 11. The apparatus body 10 is made of a material such as aluminum and has a processing container 12 having, for example, a substantially cylindrical shape. The inner wall surface of the processing container 12 is subjected to anodizing treatment. The processing container 12 is also grounded for safety.

[0011] A substantially cylindrical support portion 14, made of an insulating material such as quartz, is provided on the bottom of the processing container 12. The support portion 14 extends vertically from the bottom of the processing container 12 (for example, toward the direction of the upper electrode 30) within the processing container 12.

[0012] Inside the processing container 12, a mounting table PD is provided. The mounting table PD is supported by a support portion 14. The mounting table PD holds the wafer W on the upper surface of the mounting table PD. The wafer W is an example of an object to be temperature-controlled. The mounting table PD has an electrostatic chuck ESC and a lower electrode LE. The lower electrode LE is made of a metal material such as aluminum, for example, and has a substantially disk shape. The electrostatic chuck ESC is disposed on the lower electrode LE. The lower electrode LE is an example of a heat exchange member that performs heat exchange with the object to be temperature-controlled.

[0013] The electrostatic chuck ESC has a structure in which an electrode EL, which is a conductive film, is disposed between a pair of insulating layers or between a pair of insulating sheets. A DC power supply 17 is electrically connected to the electrode EL via a switch SW. The electrostatic chuck ESC adsorbs the wafer W on the upper surface of the electrostatic chuck ESC by an electrostatic force such as a Coulomb force generated by the DC voltage supplied from the DC power supply 17. Thereby, the electrostatic chuck ESC can hold the wafer W.

[0014] A heat transfer gas such as He gas, for example, is supplied to the electrostatic chuck ESC via a pipe 19. The heat transfer gas supplied via the pipe 19 is supplied between the electrostatic chuck ESC and the wafer W. By adjusting the pressure of the heat transfer gas supplied between the electrostatic chuck ESC and the wafer W, the heat conductivity between the electrostatic chuck ESC and the wafer W can be adjusted.

[0015] Also, inside the electrostatic chuck ESC, a heater HT, which is a heating element, is provided. A heater power supply HP is connected to the heater HT. By supplying power from the heater power supply HP to the heater HT, the wafer W on the electrostatic chuck ESC can be heated via the electrostatic chuck ESC. The temperature of the wafer W placed on the electrostatic chuck ESC is adjusted by the lower electrode LE and the heater HT. Note that the heater HT may be disposed between the electrostatic chuck ESC and the lower electrode LE. <00!00090>

[0016] Around the electrostatic chuck ESC, an edge ring ER is arranged so as to surround the edge of the wafer W and the electrostatic chuck ESC. The edge ring ER is sometimes called a focus ring. The edge ring ER can improve the in-plane uniformity of the processing on the wafer W. The edge ring ER is made of a material appropriately selected according to the material of the film to be etched, such as quartz.

[0017] Inside the lower electrode LE, a flow path 15 through which a heat medium, which is an insulating fluid such as Galden (registered trademark), flows is formed. The heat medium may sometimes be expressed as brine. A temperature control device 20 is connected to the flow path 15 via pipes 16a and 16b. The temperature control device 20 controls the temperature of the heat medium flowing in the flow path 15 of the lower electrode LE. The heat medium whose temperature is controlled by the temperature control device 20 is supplied into the flow path 15 of the lower electrode LE via the pipe 16a. The heat medium that has flowed through the flow path 15 is returned to the temperature control device 20 via the pipe 16b.

[0018] The temperature control device 20 circulates the heat medium flowing in the flow path 15 of the lower electrode LE. Also, the temperature control device 20 controls the temperature of the heat medium set to a set temperature (for example, 35°C). The temperature of the lower electrode LE is controlled to the set temperature by the heater HT and the heat medium flowing in the flow path 15. The temperature control device 20 and the control device 11 are an example of a heat medium control device.

[0019] On the lower surface of the lower electrode LE, a power supply tube 69 for supplying high-frequency power to the lower electrode LE is electrically connected. The power supply tube 69 is made of metal. Also, although not shown in FIG. 1, in the space between the lower electrode LE and the bottom of the processing container 12, a lifter pin for transferring the wafer W on the electrostatic chuck ESC and its drive mechanism and the like are arranged.

[0020] A first high-frequency power supply 64 is connected to the feed tube 69 via a matching circuit 68. The first high-frequency power supply 64 is a power supply that generates high-frequency power, i.e., high-frequency bias power, for drawing ions into the wafer W, and generates high-frequency bias power with a frequency of, for example, 400 kHz to 40.68 MHz, or in one example, 13.56 MHz. The matching circuit 68 is a circuit for matching the output impedance of the first high-frequency power supply 64 with the input impedance of the load (lower electrode LE). The high-frequency bias power generated by the first high-frequency power supply 64 is supplied to the lower electrode LE via the matching circuit 68 and the feed tube 69.

[0021] An upper electrode 30 is provided above the mounting stage PD, in a position opposite to the mounting stage PD. The lower electrode LE and the upper electrode 30 are arranged to be substantially parallel to each other. Plasma is generated in the space between the upper electrode 30 and the lower electrode LE, and plasma processing such as etching is performed on the wafer W held on the upper surface of the electrostatic chuck ESC by the generated plasma. The space between the upper electrode 30 and the lower electrode LE is the processing space PS.

[0022] The upper electrode 30 is supported on the upper part of the processing container 12 via an insulating shielding member 32 made of, for example, quartz. The upper electrode 30 has an electrode plate 34 and an electrode support 36. The lower surface of the electrode plate 34 faces the processing space PS. Multiple gas outlets 34a are formed in the electrode plate 34. The electrode plate 34 is made of, for example, a material containing silicon.

[0023] The electrode support 36 is made of a conductive material such as aluminum and detachably supports the electrode plate 34 from above. The electrode support 36 may have a water-cooling structure (not shown). A diffusion chamber 36a is formed inside the electrode support 36. Multiple gas flow ports 36b extend downward (towards the mounting stage PD) from the diffusion chamber 36a, communicating with the gas discharge port 34a of the electrode plate 34. The electrode support 36 is provided with a gas inlet 36c for guiding the processed gas into the diffusion chamber 36a, and a pipe 38 is connected to the gas inlet 36c.

[0024] A gas source group 40 is connected to the piping 38 via a valve group 42 and a flow controller group 44. The gas source group 40 has multiple gas sources. The valve group 42 includes multiple valves, and the flow controller group 44 includes multiple flow controllers such as mass flow controllers. Each of the gas source groups 40 is connected to the piping 38 via a corresponding valve in the valve group 42 and a corresponding flow controller in the flow controller group 44.

[0025] As a result, the main unit 10 can supply processing gas from one or more gas sources selected from the gas source group 40 to the diffusion chamber 36a in the electrode support 36 at individually adjusted flow rates. The processing gas supplied to the diffusion chamber 36a diffuses within the diffusion chamber 36a and is supplied in a shower-like manner into the processing space PS through the respective gas flow ports 36b and gas discharge ports 34a.

[0026] A second high-frequency power supply 62 is connected to the electrode support 36 via a matching circuit 66. The second high-frequency power supply 62 is a power supply that generates high-frequency power for plasma generation, and generates high-frequency power with a frequency of, for example, 27 to 100 MHz, and in one example, a frequency of 60 MHz. The matching circuit 66 is a circuit for matching the output impedance of the second high-frequency power supply 62 with the input impedance of the load (upper electrode 30). The high-frequency power generated by the second high-frequency power supply 62 is supplied to the upper electrode 30 via the matching circuit 66. The second high-frequency power supply 62 may also be connected to the lower electrode LE via the matching circuit 66.

[0027] Deposit shields 46, made of aluminum or the like with a surface coated with Y2O3 or quartz, are detachably provided on the inner wall surface of the processing container 12 and the outer surface of the support portion 14. The deposit shields 46 prevent etching by-products (deposits) from adhering to the processing container 12 and the support portion 14.

[0028] Between the outer wall of the support section 14 and the inner wall of the processing container 12, on the bottom side of the processing container 12 (the side where the support section 14 is installed), an exhaust plate 48 is provided, which is made of aluminum or the like with a surface coated with Y2O3 or quartz. Below the exhaust plate 48, an exhaust port 12e is provided. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52.

[0029] The exhaust system 50 has a vacuum pump such as a turbomolecular pump and can reduce the pressure of the space inside the processing container 12 to a desired vacuum level. An opening 12g for loading or unloading wafers W is provided in the side wall of the processing container 12, and the opening 12g can be opened and closed by a gate valve 54.

[0030] The control device 11 includes a processor, memory, and an input / output interface. The memory stores a program executed by the processor, as well as a recipe containing conditions for each process. The processor executes the program read from the memory and, based on the recipe stored in the memory, controls each part of the device body 10 via the input / output interface to perform a predetermined process such as etching on the wafer W. The control device 11 is an example of a control unit.

[0031] [Configuration of the temperature control device 20] Figure 2 shows an example of a temperature control device in this embodiment. The temperature control device 20 has a temperature control unit 220. The temperature control device 20 is installed, for example, on a floor below the processing container 12.

[0032] The temperature control unit 220 has the heat transfer medium supply side connected to pipe 16a. The temperature control unit 220 also has the heat transfer medium return side connected to pipe 16b. The temperature control unit 220 supplies the heat transfer medium into the flow path 15 of the lower electrode LE via pipe 16a. The heat transfer medium discharged from the flow path 15 is returned to the temperature control unit 220 via pipe 16b. The temperature control unit 220 also controls the temperature of the supplied heat transfer medium to a set temperature.

[0033] The temperature control unit 220 supplies the heat transfer medium from the reservoir tank 221 to the piping 16a using a pump 222. A heat exchanger 223, a flow sensor 224, a pressure sensor 225, a temperature sensor 226, and a variable valve 227 are provided on the outlet side of the pump 222. In other words, the heat exchanger 223, flow sensor 224, pressure sensor 225, temperature sensor 226, and variable valve 227 are located immediately after the pump 222. The heat exchanger 223 heats or cools the heat transfer medium supplied to the piping 16a to a set temperature. The flow sensor 224 detects the flow rate of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 16a. The pressure sensor 225 detects the pressure of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 16a. The temperature sensor 226 detects the temperature of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 16a. The variable valve 227, together with the variable valve 228 on the return pipe side of pipe 16b, adjusts the pressure in pipe 16a of the heat transfer medium supplied by the pump 222. Note that the reservoir tank 221 is an example of a main tank.

[0034] A sensor 229 for detecting the liquid level of the heat transfer medium stored in the reservoir tank 221 is provided on the top surface of the reservoir tank 221. The sensor 229 is a distance sensor that detects reflections from the liquid surface using, for example, ultrasound, radio waves, or lasers, to detect the height of the liquid level of the heat transfer medium. The sensor 229 outputs the detected liquid level height to the control device 11. The control device 11 determines the amount of heat transfer medium in the reservoir tank 221 based on the liquid level height. Note that the sensor 229 may use other types of sensors, such as a float type, as long as it can detect the liquid level height of the heat transfer medium. Alternatively, the sensor 229 may determine the amount of heat transfer medium in the reservoir tank 221 by measuring the weight of the reservoir tank 221. In the following explanation, it is assumed that the liquid level height detected by the sensor 229 is pre-associated with the liquid volume. In other words, it uses a reference position corresponding to the standard liquid volume, a replenishment start position corresponding to the liquid volume replenishment start level, and a recovery start position corresponding to the liquid volume recovery start level. Furthermore, the reference position, replenishment start position, and recovery start position can each be set to any position where the circulation of the heat transfer medium can continue without overflow.

[0035] A first sub-tank 231 is positioned above the reference liquid level of the reservoir tank 221. The first sub-tank 231 is connected to the reservoir tank 221 above the reference liquid level via piping 232 and a first valve 233. Piping 232 is also connected to the side of the first sub-tank 231 near the bottom or to the bottom itself. The first sub-tank 231 stores a heat transfer medium that is replenished when the amount of heat transfer medium in the reservoir tank 221 reaches a replenishment start position that is a predetermined amount less than the reference position. The first valve 233 is controlled to open when the liquid level in the reservoir tank 221 reaches the replenishment start position and close when it reaches the reference position. The first sub-tank 231 may also be equipped with a liquid level gauge or similar so that an operator can check the amount of liquid inside. Note that piping 232 is an example of a first connecting pipe. Furthermore, the first valve 233 may be of either ON / OFF control or proportional control type.

[0036] A second sub-tank 234 is positioned below the reference liquid level of the reservoir tank 221. The second sub-tank 234 is connected to the reservoir tank 221 below the reference liquid level via piping 235 and a second valve 236. Piping 235 is connected to the side of the reservoir tank 221 near the bottom or to the bottom itself. The second sub-tank 234 stores the heat transfer medium recovered when the amount of heat transfer medium in the reservoir tank 221 reaches a recovery start position that is a predetermined amount greater than the reference position. The second valve 236 is controlled to open when the liquid level in the reservoir tank 221 reaches the recovery start position and close when it reaches the reference position. The second sub-tank 234 may also be equipped with a liquid level gauge, such as a level gauge, so that an operator can check the amount of liquid inside. Note that piping 235 is an example of a second connecting pipe. The second valve 236 may be of either ON / OFF control or proportional control type.

[0037] [Liquid volume control method] Next, the liquid volume control method according to this embodiment will be described. Figure 3 is a flowchart showing an example of the liquid volume control process in this embodiment.

[0038] The control device 11 operates the pump 222 to start the circulation of the heat transfer medium through the piping 16a, the flow path 15, and the piping 16b. Based on the temperature detected by the temperature sensor 226, the control device 11 controls the opening of the heat exchanger 223 and the variable valve 227 to control the temperature of the circulating heat transfer medium to the set temperature. Once the circulation of the heat transfer medium has started, the control device 11 starts measuring the liquid level in the reservoir tank 221 (step S1).

[0039] The control device 11 determines whether the liquid level in the reservoir tank 221 is below the replenishment start position (step S2). If the control device 11 determines that the liquid level in the reservoir tank 221 is below the replenishment start position (step S2: Yes), it opens the first valve 233 (step S3). When the first valve 233 is opened, the heat transfer medium is replenished from the first sub-tank 231 to the reservoir tank 221 via the piping 232.

[0040] The control device 11 determines whether the liquid level in the reservoir tank 221 has reached the reference position (step S4). If the control device 11 determines that the liquid level in the reservoir tank 221 has not reached the reference position (step S4: No), it repeats the determination in step S4. If the control device 11 determines that the liquid level in the reservoir tank 221 has reached the reference position (step S4: Yes), it closes the first valve 233 (step S5) and returns to step S2.

[0041] On the other hand, if the control device 11 determines that the liquid level in the reservoir tank 221 exceeds the replenishment start position (step S2: No), it determines whether the liquid level in the reservoir tank 221 is above the recovery start position (step S6). If the control device 11 determines that the liquid level in the reservoir tank 221 is above the recovery start position (step S6: Yes), it opens the second valve 236 (step S7). When the second valve 236 is opened, the heat transfer medium is recovered from the reservoir tank 221 to the second sub-tank 234 via the piping 235.

[0042] The control device 11 determines whether the liquid level in the reservoir tank 221 has reached the reference position (step S8). If the control device 11 determines that the liquid level in the reservoir tank 221 has not reached the reference position (step S8: No), it repeats the determination in step S8. If the control device 11 determines that the liquid level in the reservoir tank 221 has reached the reference position (step S8: Yes), it closes the second valve 236 (step S9) and returns to step S2.

[0043] On the other hand, if the control device 11 determines that the liquid level in the reservoir tank 221 is below the recovery start position (step S6: No), it determines whether or not to terminate the liquid volume control process (step S10). If the control device 11 determines not to terminate the liquid volume control process (step S10: No), it returns to step S2. If the control device 11 determines to terminate the liquid volume control process (step S10: Yes), it stops the pump 222 and terminates the liquid volume control process. This allows for automatic management of the amount of heat transfer fluid and maintains a constant value. Furthermore, even when the substrate processing device 1 and the temperature control device 20 are operating and the heat transfer fluid in the reservoir tank 221 is circulating, maintenance of the first sub-tank 231 and the second sub-tank 234 can be performed. In other words, downtime-free operation of the temperature control device 20 is possible. Furthermore, since the first sub-tank 231 for replenishment is installed above the reference liquid level of the reservoir tank 221, and the second sub-tank 234 for recovery is installed below the reference liquid level of the reservoir tank 221, the replenishment and recovery of the heat transfer medium can be performed solely by controlling the first valve 233 and the second valve 236.

[0044] [Specific examples of heat transfer fluid replenishment and recovery] Next, specific examples of heat transfer fluid replenishment and recovery will be explained using Figures 4 and 5. Figure 4 is a diagram illustrating an example of the operation when heat transfer fluid is replenished in this embodiment. State 101 in Figure 4 shows the state in which the liquid level of the reservoir tank 221 is at the reference position. At this time, the first sub-tank 231 is filled to capacity with heat transfer fluid for replenishment, and the second sub-tank 234 is empty. Also, both the first valve 233 and the second valve 236 are closed.

[0045] Next, as shown in state 102, when the liquid level in the reservoir tank 221 falls below the replenishment start position, as shown in state 103, the control device 11 controls the opening of the first valve 233, thereby replenishing the reservoir tank 221 with heat transfer fluid from the first sub-tank 231 via the piping 232. The heat transfer fluid moves from the first sub-tank 231 to the reservoir tank 221 by gravity. Subsequently, as shown in state 104, when the liquid level in the reservoir tank 221 reaches the reference position, the control device 11 controls the closing of the first valve 233, completing the replenishment of heat transfer fluid to the reservoir tank 221.

[0046] Figure 5 illustrates an example of the operation during heat transfer fluid recovery in this embodiment. State 111 in Figure 5 shows the state where the liquid level in the reservoir tank 221 is at the reference position. At this time, the first sub-tank 231 is full of replenishment heat transfer fluid, and the second sub-tank 234 is empty. Also, both the first valve 233 and the second valve 236 are closed.

[0047] Next, as shown in state 112, when the liquid level in the reservoir tank 221 rises above the recovery start position, as shown in state 113, the control device 11 controls the opening of the second valve 236, thereby recovering the heat transfer medium from the reservoir tank 221 to the second sub-tank 234 via the piping 235. The heat transfer medium moves from the reservoir tank 221 to the second sub-tank 234 by gravity. Subsequently, as shown in state 114, when the liquid level in the reservoir tank 221 reaches the reference position, the control device 11 controls the closing of the second valve 236, thereby completing the recovery of the heat transfer medium from the reservoir tank 221.

[0048] [Example 1] In the above embodiment, the first sub-tank 231 and the second sub-tank 234 are arranged on the side of the reservoir tank 221. However, the first sub-tank 231 may be arranged above the top surface of the reservoir tank 221, and the second sub-tank 234 may be arranged below the bottom surface of the reservoir tank 221. This embodiment will be described as Modification 1. Note that some of the configurations of the substrate processing apparatus and temperature control apparatus and the liquid volume control method in Modification 1 are the same as in the above embodiment, so the description of the overlapping configurations and operations will be omitted.

[0049] Figure 6 shows an example of the sub-tank arrangement in Modification 1. In Modification 1 shown in Figure 6, the first sub-tank 231 is positioned above the top surface of the reservoir tank 221. The first sub-tank 231 is connected to the top surface of the reservoir tank 221 via piping 232 and a first valve 233. The first valve 233 is controlled, as in the embodiment, to open when the liquid level in the reservoir tank 221 reaches the replenishment start position and to close when it reaches the reference position, thereby replenishing the reservoir tank 221 with the heat transfer medium in the first sub-tank 231.

[0050] In the modified example 1, a second sub-tank 234 is positioned below the bottom surface of the reservoir tank 221. The second sub-tank 234 is connected to the bottom surface of the reservoir tank 221 via piping 235 and a second valve 236. Similar to the embodiment, the second valve 236 is controlled to open when the liquid level in the reservoir tank 221 reaches the recovery start position and close when it reaches the reference position, thereby recovering the heat transfer medium in the reservoir tank 221 into the second sub-tank 234. The arrangement of the first sub-tank 231 and the second sub-tank 234 may be such that the first sub-tank 231 is positioned above the top surface of the reservoir tank 221 and the second sub-tank 234 is positioned on the side of the reservoir tank 221. Alternatively, the first sub-tank 231 may be positioned on the side of the reservoir tank 221 and the second sub-tank 234 is positioned below the bottom surface of the reservoir tank 221.

[0051] [Differentiation 2] In the above embodiment, the heat transfer medium recovered in the second sub-tank 234 is manually transferred to another container by an operator. However, it may also be transferred from the second sub-tank 234 to the first sub-tank 231 by pump. This embodiment will be described as Modification 2. Note that some of the configurations of the substrate processing apparatus and temperature control apparatus and the liquid volume control method in Modification 2 are the same as in the above embodiment, so the description of the overlapping configurations and operations will be omitted.

[0052] Figure 7 shows an example of the pump connection in Modification 2. In Modification 2 shown in Figure 7, the lower part of the second sub-tank 234 and the upper part of the first sub-tank 231 are connected by a pipe 237. A pump 238 is provided in the pipe 237 for moving the heat transfer medium from the second sub-tank 234 to the first sub-tank 231. The heat transfer medium recovered in the second sub-tank 234 is moved to the first sub-tank 231 via the pipe 237 by operating the pump 238 with the first valve 233 and the second valve 236 closed. This eliminates the need for workers to manually move the heat transfer medium recovered in the second sub-tank 234 to another container. In addition, the recovered heat transfer medium can be reused for replenishment.

[0053] In Figure 7, the piping 237 is connected to the upper part of the side of the first sub-tank 231. However, to maximize the capacity of the first sub-tank 231, it may be connected to the top surface of the first sub-tank 231. Alternatively, a valve (not shown) may be provided on the piping 237, which is opened only when moving the heat transfer medium from the second sub-tank 234 to the first sub-tank 231, and closed during normal operation. When a valve is provided on the piping 237 in this way, the connection point of the piping 237 to the first sub-tank 231 may be any location, such as the lower part of the side.

[0054] [Difference 3] In the above embodiment, a temperature control device 20 having one temperature control unit 220 for circulating a heat transfer medium was described. However, a temperature control device that circulates multiple heat transfer mediums with different temperatures may also be used, and an embodiment in this case will be described as Modification 3. Note that some of the configurations of the substrate processing apparatus and temperature control device and the liquid volume control method in Modification 3 are the same as in the above embodiment, so the description of the overlapping configurations and operations will be omitted.

[0055] Figure 8 shows an example of a temperature control device in modified example 3. The temperature control device 20a includes a circulation unit 200, a first temperature control unit 220a, and a second temperature control unit 240a. For example, the circulation unit 200 is installed on the same floor as the processing container 12, and the first temperature control unit 220a and the second temperature control unit 240a are installed on a floor below the circulation unit 200.

[0056] The circulation unit 200 has a valve 201 whose outlet side is connected to piping 16a. The circulation unit 200 also has a pump 202 connected to piping 16b, which circulates the heat transfer medium flowing through the flow path 15 of the lower electrode LE. The outlet side of piping 16b of pump 202 is connected to the inlet side of valve 201 via a check valve 206 and piping 207 at connection point A. During pump 202 operation, the pressure in piping 207 is lower than the pressure in piping 16b on the outlet side of pump 202, causing the check valve 206 to open. Therefore, the heat transfer medium circulates through the path of pump 202, piping 16b, check valve 206, piping 207, valve 201, piping 16a, flow path 15, and piping 16b. Furthermore, a temperature sensor 203 is provided in piping 16a within the circulation unit 200 to detect the temperature on the inlet side of flow path 15. Note that the temperature sensor 203 may be located outside the temperature control device 20a. For example, the temperature sensor 203 may be installed directly below the lower electrode LE, for example, at the connection point between the pipe 16a and the flow path 15, or it may be installed at an intermediate point between the lower electrode LE and the temperature control device 20a.

[0057] The first temperature control unit 220a is connected to pipe 16a via pipe 239, pipe 210, and valve 201. The first temperature control unit 220a is also connected to pipe 16b via pipe 230, pipe 212, and check valve 204. The connection point B between pipe 239 and pipe 210 and the connection point C between pipe 230 and pipe 212 are connected by a bypass pipe 211. A monitoring pressure sensor 208 is provided at connection point C.

[0058] In modified example 3, the first temperature control unit 220a controls the temperature of the first heat transfer medium. The first temperature control unit 220a mixes the temperature-controlled first heat transfer medium with the heat transfer medium circulating from pipe 207 to pipe 16a via pipe 239, pipe 210, and valve 201, and supplies it into the flow path 15 of the lower electrode LE. The temperature of the first heat transfer medium is higher than the temperature of the second heat transfer medium, for example, it can be 90°C. The temperature of the first heat transfer medium can be any temperature higher than the temperature of the second heat transfer medium. The pressure in pipes 210-212, 230, and 239 decreases as the first heat transfer medium is supplied into the flow path 15 of the lower electrode LE. The heat transfer medium discharged from the flow path 15 is returned to the first temperature control unit 220a via pipes 212 and 230, passing through a check valve 204 that opens due to the pressure drop at connection point A of pipe 16b. The piping consisting of pipes 239, 210, and 16a is an example of supply piping. The piping consisting of pipes 16b, 212, and 230 is an example of return piping.

[0059] In the first temperature control unit 220a, the pump 222 supplies the heat transfer medium from the reservoir tank 221 to the piping 239. A heat exchanger 223, a flow sensor 224, a pressure sensor 225, a temperature sensor 226, and a variable valve 227 are provided on the outlet side of the pump 222. In other words, the heat exchanger 223, flow sensor 224, pressure sensor 225, temperature sensor 226, and variable valve 227 are located immediately after the pump 222. The heat exchanger 223 heats or cools the heat transfer medium supplied to the piping 239 to a set temperature. The flow sensor 224 detects the flow rate of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 239. The pressure sensor 225 detects the pressure of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 239. The temperature sensor 226 detects the temperature of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 239. The variable valve 227, together with the variable valve 228 on the return pipe side of pipe 230, adjusts the pressure in the pipe 239 of the heat transfer medium supplied by the pump 222. In the modified example 3, the reservoir tank 221 is an example of a main tank. Similar to the embodiment, the reservoir tank 221 is connected to a first sub-tank 231 and a second sub-tank 234.

[0060] The second temperature control unit 240a is connected to pipe 16a via pipe 259, pipe 213, and valve 201. The second temperature control unit 240a is also connected to pipe 16b via pipe 250, pipe 215, and check valve 205. The connection point D between pipe 259 and pipe 213 and the connection point E between pipe 250 and pipe 215 are connected by a bypass pipe 214. A monitoring pressure sensor 209 is provided at connection point E.

[0061] In modified example 3, the second temperature control unit 240a controls the temperature of the second heat transfer medium. The second temperature control unit 240a mixes the temperature-controlled second heat transfer medium with the heat transfer medium circulating from pipe 207 to pipe 16a via pipe 259, pipe 213, and valve 201, and supplies it into the flow path 15 of the lower electrode LE. The temperature of the second heat transfer medium is lower than the temperature of the first heat transfer medium, for example, it can be -10°C. The temperature of the second heat transfer medium can be any temperature lower than the temperature of the first heat transfer medium. The pressure in pipes 213-215, 250, and 259 decreases as the second heat transfer medium is supplied into the flow path 15 of the lower electrode LE. The heat transfer medium discharged from the flow path 15 passes through the check valve 205, which opens due to the pressure drop at connection point A of pipe 16b, and is returned to the second temperature control unit 240a via pipes 215 and 250.

[0062] In the second temperature control unit 240a, the pump 242 supplies the heat transfer medium from the reservoir tank 241 to the piping 259. A heat exchanger 243, a flow sensor 244, a pressure sensor 245, a temperature sensor 246, and a variable valve 247 are provided on the outlet side of the pump 242. In other words, the heat exchanger 243, flow sensor 244, pressure sensor 245, temperature sensor 246, and variable valve 247 are located immediately after the pump 242. The heat exchanger 243 heats or cools the heat transfer medium supplied to the piping 259 to a set temperature. The flow sensor 244 detects the flow rate of the heat transfer medium supplied by the pump 242 on the outlet side of the piping 259. The pressure sensor 245 detects the pressure of the heat transfer medium supplied by the pump 242 on the outlet side of the piping 259. The temperature sensor 246 detects the temperature of the heat transfer medium supplied by the pump 242 on the outlet side of the piping 259. The variable valve 247, together with the variable valve 248 on the return pipe side of pipe 250, adjusts the pressure in pipe 259 of the heat transfer medium supplied by pump 242. Note that the reservoir tank 241 is an example of a main tank.

[0063] A sensor 249 for detecting the liquid level of the heat transfer medium stored in the reservoir tank 241 is provided on the top surface of the reservoir tank 241. The sensor 249 is a distance sensor that detects reflections from the liquid surface using, for example, ultrasound, radio waves, or lasers, to detect the height of the liquid level of the heat transfer medium. The sensor 249 outputs the detected liquid level height to the control device 11. The control device 11 determines the amount of liquid in the heat transfer medium in the reservoir tank 241 based on the liquid level height. Note that the sensor 249 may use other types of sensors, such as a float type, as long as it can detect the liquid level height of the heat transfer medium. Alternatively, the sensor 249 may determine the amount of liquid in the reservoir tank 241 by measuring the weight of the reservoir tank 241. The liquid level height detected by the sensor 249 is pre-associated with the liquid volume. In other words, similar to the reservoir tank 221, it uses a reference position corresponding to the standard liquid volume, a replenishment start position corresponding to the liquid volume replenishment start level, and a recovery start position corresponding to the liquid volume recovery start level. Furthermore, the reference position, replenishment start position, and recovery start position can each be set to any position where circulation of the heat transfer medium can continue without overflow.

[0064] A first sub-tank 251 is positioned above the reference liquid level of the reservoir tank 241. The first sub-tank 251 is connected to the reservoir tank 241 above the reference liquid level via piping 252 and a first valve 253. Piping 252 is also connected to the side of the first sub-tank 251 near the bottom or to the bottom itself. The first sub-tank 251 stores a heat transfer medium that is replenished when the amount of heat transfer medium in the reservoir tank 241 reaches a replenishment start position that is a predetermined amount less than the reference position. The first valve 253 is controlled to open when the liquid level in the reservoir tank 241 reaches the replenishment start position and close when it reaches the reference position. The first sub-tank 251 may also be equipped with a liquid level gauge, such as a level gauge, so that an operator can check the amount of liquid inside. Piping 252 is an example of a first connecting pipe. Furthermore, the first valve 253 may be of either ON / OFF control or proportional control type.

[0065] A second sub-tank 254 is positioned below the reference liquid level of the reservoir tank 241. The second sub-tank 254 is connected to the reservoir tank 241 below the reference liquid level via piping 255 and a second valve 256. Piping 255 is connected to the side of the reservoir tank 241 near the bottom or to the bottom itself. The second sub-tank 254 stores the heat transfer medium recovered when the amount of heat transfer medium in the reservoir tank 241 reaches a recovery start position that is a predetermined amount greater than the reference position. The second valve 256 is controlled to open when the liquid level in the reservoir tank 241 reaches the recovery start position and close when it reaches the reference position. The second sub-tank 254 may also be equipped with a liquid level gauge, such as a level gauge, so that an operator can check the amount of liquid inside. Note that piping 255 is an example of a second connecting pipe. The second valve 256 may be of either ON / OFF control or proportional control type.

[0066] In Modification 3, the opening degrees of valves 201, 227, 228, 247, and 248, the discharge pressure of pumps 202, 222, and 242, and the temperatures in heat exchangers 223 and 243 are controlled by the control device 11, respectively. Pumps 202, 222, and 242 are pumps whose discharge pressure can be controlled according to the inverter frequency. The opening degree of valve 201 can be adjusted, for example, between +100% and -100%. When valve 201 is at a 0% opening, the entire heat transfer medium from pipe 207 flows into pipe 16a, and the heat transfer medium from pipes 210 and 213 does not flow into pipe 16a. When valve 201 is at a +100% opening, the entire heat transfer medium from pipe 210 flows into pipe 16a, and the heat transfer medium from pipes 207 and 213 does not flow into pipe 16a. On the other hand, when valve 201 is open to -100%, the entire heat transfer fluid from pipe 213 flows into pipe 16a, and the heat transfer fluid from pipes 207 and 210 does not flow into pipe 16a.

[0067] In other words, if you want to raise the temperature of the circulating heat transfer medium by mixing in the first heat transfer medium on the high-temperature side, you change the opening of valve 201 from the 0% position to the positive side. On the other hand, if you want to lower the temperature of the circulating heat transfer medium by mixing in the second heat transfer medium on the low-temperature side, you change the opening of valve 201 from the 0% position to the negative side. For example, when plasma processing is performed by igniting plasma in the processing space PS, heat is also supplied from the plasma to the lower electrode LE. Therefore, in order to keep the temperature of the lower electrode LE constant, for example, you can set the opening of valve 201 to -10%, set the flow rate of the heat transfer medium circulating in pipe 207 to 90%, and mix in 10% of the second heat transfer medium on the low-temperature side of pipe 213.

[0068] In the liquid volume control method according to Modification 3, the control device 11 executes the liquid volume control method of the embodiment shown in Figure 3 for the first temperature control unit 220a and the second temperature control unit 240a, respectively. That is, in Modification 3, the liquid volume of the heat transfer medium can be automatically managed for each of the first temperature control unit 220a and the second temperature control unit 240a, and a constant value can be maintained. Furthermore, even when the substrate processing apparatus 1 and the temperature control device 20a are operating and the heat transfer medium in the reservoir tanks 221 and 241 is circulating, maintenance of the first sub-tanks 231 and 251 and the second sub-tanks 234 and 254 can be performed. In other words, downtime-free operation of the temperature control device 20a can be achieved. Furthermore, since the first sub-tanks 231 and 251 for replenishment are installed above the reference liquid level of the reservoir tanks 221 and 241, and the second sub-tanks 234 and 254 for recovery are installed below the reference liquid level of the reservoir tanks 221 and 241, the replenishment and recovery of the heat transfer medium can be performed solely by controlling the first valves 233 and 253 and the second valves 236 and 256.

[0069] [Differentiation Example 4] In the above-described Modification 3, a temperature control device 20a of the type in which a heat transfer medium circulates within the circulation section 200 was described. However, a temperature control device of the type that switches between a first heat transfer medium and a second heat transfer medium in the flow path 15 within the lower electrode LE may also be used, and an embodiment of this case will be described as Modification 4. Note that some of the configurations of the substrate processing apparatus and temperature control device and the liquid volume control method in Modification 4 are the same as in Modification 3 described above, so the explanation of the overlapping configurations and operations will be omitted.

[0070] Figure 9 shows an example of a temperature control device in modified example 4. Compared to the temperature control device 20a in modified example 3 described above, the temperature control device 20b shown in Figure 9 has a switching unit 300, a first temperature control unit 220b, and a second temperature control unit 240b instead of a circulation unit 200, a first temperature control unit 220a, and a second temperature control unit 240a. The switching unit 300 also has valves 301 to 304, a temperature sensor 305, and piping 306 to 311.

[0071] The first temperature control unit 220b is connected to pipe 16a via pipe 312, pipe 306, and valve 301. The first temperature control unit 220b is also connected to pipe 16b via pipe 313, pipe 308, and valve 302. In modified example 4, the first temperature control unit 220b controls the temperature of the first heat transfer medium, which is on the high-temperature side. The first temperature control unit 220b supplies the temperature-controlled first heat transfer medium into the flow path 15 of the lower electrode LE via pipe 312, pipe 306, valve 301, and pipe 16a. The heat transfer medium supplied into the flow path 15 of the lower electrode LE is then returned to the first temperature control unit 220b via pipe 16b, valve 302, pipe 308, and pipe 313. The piping consisting of pipe 312, pipe 306, and pipe 16a is an example of supply piping. Furthermore, the piping consisting of pipe 16b, pipe 308, and pipe 313 is an example of return piping.

[0072] The second temperature control unit 240b is connected to pipe 16a via pipe 314, pipe 309, and valve 301. The second temperature control unit 240b is also connected to pipe 16b via pipe 315, pipe 311, and valve 302. In modified example 4, the second temperature control unit 240b controls the temperature of the second heat transfer medium, which is on the lower temperature side. The second temperature control unit 240b supplies the temperature-controlled second heat transfer medium into the flow path 15 of the lower electrode LE via pipe 314, pipe 309, valve 301, and pipe 16a. The heat transfer medium supplied into the flow path 15 of the lower electrode LE is then returned to the second temperature control unit 240b via pipe 16b, valve 302, pipe 311, and pipe 315. The piping consisting of pipe 314, pipe 309, and pipe 16a is an example of supply piping. Furthermore, the piping consisting of pipe 16b, pipe 311, and pipe 315 is an example of return piping.

[0073] Valve 301 is provided at the connection point between pipe 16a and pipes 306 and 309, and switches the heat transfer medium flowing through the channel 15 of the lower electrode LE to either the first heat transfer medium or the second heat transfer medium. Valve 302 is provided at the connection point between pipe 16b and pipes 308 and 311, and switches the output destination of the heat transfer medium flowing out of the channel 15 of the lower electrode LE to either the first temperature control unit 220b or the second temperature control unit 240b.

[0074] The connection point F between pipe 312 and pipe 306 and the connection point G between pipe 313 and pipe 308 are connected by a bypass pipe, pipe 307. A bypass valve 303 is provided in pipe 307.

[0075] The connection point H between pipe 314 and pipe 309 and the connection point I between pipe 315 and pipe 311 are connected by a bypass pipe, pipe 310. A bypass valve 304 is provided in pipe 310.

[0076] A temperature sensor 305 is provided in the piping 16a within the temperature control device 20b to measure the temperature at the inlet side of the flow path 15. The temperature sensor 305 may be located outside the temperature control device 20b. For example, the temperature sensor 305 may be located directly below the lower electrode LE, for example, at the connection point between the piping 16a and the flow path 15, or it may be located at an intermediate point between the lower electrode LE and the temperature control device 20b.

[0077] The opening and closing of valves 301, 302 and bypass valves 303, 304 are controlled by the control device 11, respectively. The first temperature control unit 220b and the second temperature control unit 240b are the same as the first temperature control unit 220a and the second temperature control unit 240a in the modified example 3 described above, except that they do not have variable valves 227, 228 and variable valves 247, 248, so their explanation is omitted.

[0078] In the temperature control device 20b, when the first heat transfer medium on the high-temperature side is supplied into the flow path 15 of the lower electrode LE, valve 301 opens on the side of pipe 306 and closes on the side of pipe 309, and valve 302 opens on the side of pipe 308 and closes on the side of pipe 311. Also, bypass valve 303 is closed and bypass valve 304 is open. Therefore, the first heat transfer medium on the high-temperature side supplied from the first temperature control unit 220b is supplied into the flow path 15 of the lower electrode LE and returns to the first temperature control unit 220b, and the second heat transfer medium on the low-temperature side supplied from the second temperature control unit 240b returns to the second temperature control unit 240b via bypass valve 304.

[0079] On the other hand, in the temperature control device 20b, when the second heat transfer medium on the low-temperature side is supplied into the flow path 15 of the lower electrode LE, valve 301 closes on the side of pipe 306 and opens on the side of pipe 309, and valve 302 closes on the side of pipe 308 and opens on the side of pipe 311. Also, bypass valve 303 is open and bypass valve 304 is closed. Therefore, the second heat transfer medium on the low-temperature side supplied from the second temperature control unit 240b is supplied into the flow path 15 of the lower electrode LE and returns to the second temperature control unit 240b, and the first heat transfer medium on the high-temperature side supplied from the first temperature control unit 220b returns to the first temperature control unit 220b via bypass valve 303.

[0080] In the liquid volume control method according to Modification 4, similar to Modification 3, the control device 11 executes the liquid volume control method of the embodiment shown in Figure 3 for the first temperature control unit 220b and the second temperature control unit 240b, respectively. That is, in Modification 4, the liquid volume of the heat transfer medium can be automatically managed for each of the first temperature control unit 220b and the second temperature control unit 240b, and a constant value can be maintained.

[0081] [Difference 5] In the above modified examples 3 and 4, the first sub-tank 231 and the second sub-tank 234 of the first temperature control units 220a and 220b were separated from the first sub-tank 251 and the second sub-tank 254 of the second temperature control units 240a and 240b. However, they may be connected to each other, and this embodiment will be described as modified example 5. Note that some of the configurations of the substrate processing apparatus and temperature control apparatus and the liquid volume control method in modified example 5 are the same as in modified examples 3 and 4 described above, so the explanation of the overlapping configurations and operations will be omitted.

[0082] Figure 10 shows an example of the connection between subtanks in Modification 5. As shown in Figure 10, in Modification 5, the first subtank 231 and the first subtank 251 are connected via piping 261 and a third valve 262. Piping 261 is connected to the side of the first subtanks 231 and 251 near the bottom or to the bottom, respectively. Piping 261 is used to supply the heat transfer medium from one of the first subtanks 231 and 251 to the side where the amount of heat transfer medium is insufficient by opening the third valve 262. In other words, the third valve 262 is closed during normal operation. Note that piping 261 is an example of a third connecting pipe. The third valve 262 may be of either ON / OFF control or proportional control type.

[0083] In modification 5, the second sub-tank 234 and the second sub-tank 254 are connected via piping 263 and a fourth valve 264. Piping 263 is connected to the side of the second sub-tanks 234 and 254 near the bottom or to the bottom, respectively. Piping 263 is used to move the heat transfer medium to the other second sub-tank 254 or 234 by opening the fourth valve 264 when the heat transfer medium in one of the second sub-tanks 234 or 254 becomes full. In other words, the fourth valve 264 is closed during normal operation. Note that piping 263 is an example of a fourth connecting pipe. The fourth valve 264 may be of either ON / OFF control or proportional control type.

[0084] In the temperature control devices 20a and 20b shown in the above modified examples 3 and 4, the amount of heat transfer medium may become unevenly distributed in one of the reservoir tanks 221 and 241 as the temperature control and switching of the heat transfer medium flowing through the flow path 15 are repeatedly performed. In modified example 5, in such a case, the amount of heat transfer medium is equalized between the reservoir tanks 221 and 241 by moving the heat transfer medium between the first sub-tanks 231 and 251 and the second sub-tanks 234 and 254.

[0085] For example, if the amount of heat transfer medium in the reservoir tank 221 does not reach the reference level even after replenishing all the heat transfer medium in the first sub-tank 231, the control device 11 opens the third valve 262 to move the heat transfer medium from the first sub-tank 251 to the first sub-tank 231. The heat transfer medium moved to the first sub-tank 231 will be used to replenish the reservoir tank 221. Also, for example, if the amount of heat transfer medium in the reservoir tank 221 exceeds the reference level even after recovering until the second sub-tank 234 is full, the control device 11 opens the fourth valve 264 to move the heat transfer medium from the second sub-tank 234 to the second sub-tank 254. In other words, there will be more capacity in the second sub-tank 234, so more heat transfer medium can be recovered from the reservoir tank 221. Furthermore, in the reservoir tank 241, just as in the case of reservoir tank 221, the heat transfer medium can be moved from the first sub-tank 231 to the first sub-tank 251, or from the second sub-tank 254 to the second sub-tank 234.

[0086] As described above, according to this embodiment, the temperature control device 20 includes a main tank (reservoir tank 221) for storing a heat transfer medium, a first sub-tank 231 located above a reference position of the liquid level in the main tank, a second sub-tank 234 located below a reference position of the main tank, a first connecting pipe (piping 232) connecting the first sub-tank 231 and the main tank and equipped with a first valve 233, a second connecting pipe (piping 235) connecting the second sub-tank 234 and the main tank and equipped with a second valve 236, and a control unit (control device 11). The control unit controls the first valve 233 and the second valve 236 according to the liquid level in the main tank. As a result, the liquid level of the heat transfer medium can be automatically managed.

[0087] Furthermore, according to this embodiment, the liquid volume is the liquid volume based on the liquid level in the main tank, as detected by a sensor 229 installed in the main tank, which detects the liquid level of the heat transfer medium. As a result, the liquid volume of the heat transfer medium can be automatically managed.

[0088] Furthermore, according to this embodiment, the first connecting pipe is connected to the main tank and the first sub-tank at a position above the reference position of the main tank. As a result, the heat transfer medium stored in the first sub-tank 231 can be replenished to the main tank (reservoir tank 221).

[0089] Furthermore, according to this embodiment, the bottom of the first sub-tank is located above the reference position of the main tank. As a result, the heat transfer medium stored in the first sub-tank 231 can be replenished to the main tank (reservoir tank 221).

[0090] Furthermore, according to this embodiment, the second connecting pipe is connected to the main tank and the second sub-tank at a position lower than the reference position of the main tank. As a result, the heat transfer medium can be recovered from the main tank to the second sub-tank 234.

[0091] Furthermore, according to this embodiment, the upper part of the second sub-tank is located below the reference position of the main tank. As a result, the heat transfer medium can be recovered from the main tank into the second sub-tank 234.

[0092] Furthermore, according to this embodiment, the first sub-tank 231 is positioned on the side of the main tank. As a result, the heat transfer medium stored in the first sub-tank 231 can be replenished in the main tank.

[0093] Furthermore, according to this embodiment, the first sub-tank 231 is positioned on the upper side of the main tank. As a result, the heat transfer medium stored in the first sub-tank 231 can be replenished in the main tank.

[0094] Furthermore, according to this embodiment, the second sub-tank 234 is positioned on the side of the main tank. As a result, the heat transfer medium can be recovered from the main tank into the second sub-tank 234.

[0095] Furthermore, according to this embodiment, the second sub-tank 234 is positioned on the underside of the main tank. As a result, the heat transfer medium can be recovered from the main tank into the second sub-tank 234.

[0096] Furthermore, according to this embodiment, the first valve 233 is controlled to open when the liquid level in the main tank reaches the replenishment start position and to close when it reaches the reference position. As a result, the amount of heat transfer fluid in the main tank can be automatically managed.

[0097] Furthermore, according to this embodiment, the second valve 236 is controlled to open when the liquid level in the main tank reaches the recovery start position and close when it reaches the reference position. As a result, the amount of heat transfer fluid in the main tank can be automatically managed.

[0098] Furthermore, according to this embodiment, there is a pipe 237 and a pump 238 for moving the heat transfer medium from the second sub-tank 234 to the first sub-tank 231. As a result, the recovered heat transfer medium can be reused for replenishment.

[0099] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

[0100] Furthermore, although the above embodiment described a temperature control device 20 with one heat transfer fluid circulation system, it is not limited to this. For example, it can also be applied to temperature control devices with two or more heat transfer fluid circulation systems.

[0101] Furthermore, although a capacitively coupled plasma (CCP) was used as an example of a plasma source in the above embodiment, the disclosed technology is not limited to this. As a plasma source, for example, inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), or helicon wave-excited plasma (HWP) may be used.

[0102] Furthermore, although the above embodiment described a plasma etching apparatus as an example of the substrate processing apparatus 1, the disclosed technology is not limited to this. The disclosed technology can be applied to devices that control the temperature of a temperature-controlled object such as a wafer W using a temperature-controlled heat transfer medium, in addition to etching apparatuses, such as film deposition apparatuses, modification apparatuses, or cleaning apparatuses.

[0103] Furthermore, this disclosure can also be structured as follows: (1) A temperature control device, A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, A second connecting pipe, which connects the second sub-tank and the main tank and is equipped with a second valve, It has a control unit and The control unit controls the first valve and the second valve according to the liquid level in the main tank. Temperature control device. (2) The aforementioned liquid volume is the liquid volume based on the liquid level in the main tank, as detected by a sensor installed in the main tank that detects the liquid level of the heat transfer medium. The temperature control device described in (1) above. (3) The first connecting pipe is connected to the main tank and the first sub-tank at a position above the reference position of the main tank, The temperature control device described in (1) or (2) above. (4) The bottom of the first sub-tank is located above the reference position of the main tank. A temperature control device according to any one of (1) to (3) above. (5) The second connecting pipe is connected to the main tank and the second sub-tank at a position lower than the reference position of the main tank, A temperature control device according to any one of (1) to (4) above. (6) The upper part of the second sub-tank is located below the reference position of the main tank. A temperature control device as described in any one of (1) to (5) above. (7) The first sub-tank is positioned on the side of the main tank, A temperature control device according to any one of (1) to (6) above. (8) The first sub-tank is positioned on the upper side of the main tank. A temperature control device according to any one of (1) to (6) above. (9) The second sub-tank is positioned on the side of the main tank, A temperature control device according to any one of (1) to (8) above. (10) The second sub-tank is positioned on the lower side of the main tank. A temperature control device according to any one of (1) to (8) above. (11) The first valve is controlled to open when the liquid level in the main tank reaches the replenishment start position and to close when it reaches the reference position. A temperature control device according to any one of (1) to (10) above. (12) The second valve is controlled to open when the liquid level in the main tank reaches the recovery start position and to close when it reaches the reference position. A temperature control device according to any one of (1) to (11) above. (13) The system includes piping and a pump for transferring a heat transfer medium from the second sub-tank to the first sub-tank. A temperature control device according to any one of (1) to (12) above. (14) A substrate processing apparatus, The substrate processing apparatus includes a temperature control device that controls the temperature of the component to be temperature controlled, The temperature control device is A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, A second connecting pipe, which connects the second sub-tank and the main tank and is equipped with a second valve, It has a control unit and The control unit controls the first valve and the second valve according to the liquid level in the main tank. Circuit board processing equipment. (15) The aforementioned liquid volume is the liquid volume based on the liquid level in the main tank, as detected by a sensor installed in the main tank that detects the liquid level of the heat transfer medium. The substrate processing apparatus described in (14) above. (16) A substrate processing apparatus, The substrate processing apparatus includes a temperature control device that controls the temperature of the component to be temperature controlled, The temperature control device is Multiple temperature control units, It has a control unit and Multiple temperature control units, A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, Each of the following is provided: a second connecting pipe that connects the second sub-tank and the main tank and is equipped with a second valve, The control unit controls the first valve and the second valve according to the liquid level in the main tank, for each of the plurality of temperature control units. Circuit board processing equipment. (17) The aforementioned liquid volume is the liquid volume based on the liquid level in the main tank, as detected by a sensor installed in the main tank that detects the liquid level of the heat transfer medium. The substrate processing apparatus described in (16) above. (18) A method for controlling the liquid volume of a temperature control device, The temperature control device is A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, The second sub-tank and the main tank are connected by a second connecting pipe equipped with a second valve, The first valve and the second valve are controlled according to the liquid level in the main tank. A method for controlling liquid volume. [Explanation of Symbols]

[0104] 1. Substrate processing apparatus 10 Main unit of the device 11 Control device 12 Processing container 15 channels 16a, 16b, 232, 235, 237, 252, 255, 261, 263 Piping 20, 20a, 20b Temperature control device 200 Circulation section 220 Temperature control unit 220a, 220b First temperature control unit 221,241 Reservoir Tanks 222,238,242 pumps 229,249 sensors 231,251 First sub-tank 233,253 First valve 234,254 Second sub-tank 236,256 Second valve 240a, 240b Second temperature control unit 262 Third valve 264 The fourth valve 300 Switching section ESC Electrostatic Chuck LE lower electrode PD mounting platform W wafer

Claims

1. A temperature control device, A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, A second connecting pipe, which connects the second sub-tank and the main tank and is equipped with a second valve, It has a control unit and The control unit controls the first valve and the second valve according to the liquid level in the main tank. Temperature control device.

2. The aforementioned liquid volume is the liquid volume based on the liquid level in the main tank, as detected by a sensor installed in the main tank that detects the liquid level of the heat transfer medium. The temperature control device according to claim 1.

3. The first connecting pipe is connected to the main tank and the first sub-tank at a position above the reference position of the main tank. The temperature control device according to claim 1.

4. The bottom of the first sub-tank is located above the reference position of the main tank. A temperature control device according to any one of claims 1 to 3.

5. The second connecting pipe is connected to the main tank and the second sub-tank at a position below the reference position of the main tank, A temperature control device according to any one of claims 1 to 3.

6. The upper part of the second sub-tank is located below the reference position of the main tank. A temperature control device according to any one of claims 1 to 3.

7. The first sub-tank is positioned on the side of the main tank. A temperature control device according to any one of claims 1 to 3.

8. The first sub-tank is positioned on the upper side of the main tank. A temperature control device according to any one of claims 1 to 3.

9. The second sub-tank is positioned on the side of the main tank, A temperature control device according to any one of claims 1 to 3.

10. The second sub-tank is positioned on the lower side of the main tank. A temperature control device according to any one of claims 1 to 3.

11. The first valve is controlled to open when the liquid level in the main tank reaches the replenishment start position and to close when it reaches the reference position. A temperature control device according to any one of claims 1 to 3.

12. The second valve is controlled to open when the liquid level in the main tank reaches the recovery start position and to close when it reaches the reference position. A temperature control device according to any one of claims 1 to 3.

13. The system includes piping and a pump for transferring a heat transfer medium from the second sub-tank to the first sub-tank. A temperature control device according to any one of claims 1 to 3.

14. A substrate processing apparatus, The substrate processing apparatus includes a temperature control device that controls the temperature of the component to be temperature controlled, The temperature control device is A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, A second connecting pipe, which connects the second sub-tank and the main tank and is equipped with a second valve, It has a control unit and The control unit controls the first valve and the second valve according to the liquid level in the main tank. Circuit board processing equipment.

15. The aforementioned liquid volume is the liquid volume based on the liquid level in the main tank, as detected by a sensor installed in the main tank that detects the liquid level of the heat transfer medium. The substrate processing apparatus according to claim 14.

16. A substrate processing apparatus, The substrate processing apparatus includes a temperature control device that controls the temperature of the component to be temperature controlled, The temperature control device is Multiple temperature control units, It has a control unit and Multiple temperature control units, A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, Each of the following is provided: a second connecting pipe that connects the second sub-tank and the main tank and is equipped with a second valve, The control unit controls the first valve and the second valve according to the liquid volume in the main tank, for each of the plurality of temperature control units. Circuit board processing equipment.

17. The aforementioned liquid volume is the liquid volume based on the liquid level in the main tank, as detected by a sensor installed in the main tank that detects the liquid level of the heat transfer medium. The substrate processing apparatus according to claim 15.

18. A method for controlling the liquid volume of a temperature control device, The temperature control device is A main tank for storing the heat transfer medium, A first sub-tank located above the reference position of the liquid level in the main tank, A second sub-tank located below the reference position of the main tank, A first connecting pipe, which connects the first sub-tank and the main tank and is equipped with a first valve, The second sub-tank and the main tank are connected by a second connecting pipe equipped with a second valve, The first valve and the second valve are controlled according to the liquid level in the main tank. A method for controlling liquid volume.

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