Pattern forming method

Abstract

This pattern forming method according to the present invention comprises: a superposition step in which a curable resin layer 3 and a support film 4 are superposed on a substrate 2; a curing step in which the entirety of the curable resin layer 3 is cured; a processing step in which the curable resin layer 3 after curing is irradiated with excimer laser light 15 through a mask 14 from the support film 4 side, thereby processing the curable resin layer 3 into a predetermined pattern; a separation step in which the support film 4 is separated from the curable resin layer 3 after processing; and a formation step in which after the formation of a plating layer 17 using the curable resin layer 3 after processing as a mask, the curable resin layer 3 is removed, thereby forming a wiring pattern 16 on the substrate 2 by means of the plating layer 17.

Description

Pattern Formation Method

[0001] The present disclosure relates to a patterning method.

[0002] In recent years, electronic devices have become increasingly smaller, lighter, and more multifunctional. This trend has led to increased integration of LSIs and chip components, resulting in increased pin counts and smaller sizes. This has created a demand for higher density and precision in the semiconductor elements, semiconductor packages, printed wiring boards, flexible wiring boards, and other components that make up these components.

[0003] A conventional pattern formation method is the semi-additive process. In this method, an electroless plating layer is formed on an insulating layer, and a resist layer of a predetermined pattern is formed on the electroless plating layer using a photosensitive dry film. An electroplated layer is then formed, and the resist layer is peeled off and the electroless plating layer is removed to form wiring having a desired pattern on a substrate. However, as patterns become finer, a problem arises in that defects in the pattern become significant due to foreign matter such as particles or deposits contained in the support film (PET film) that supports the photosensitive dry film.

[0004] To address these problems, a method of forming a pattern using laser ablation processing has been attracting attention. For example, in the method of forming a solder resist described in Patent Document 1, a semi-cured curable resin having a support film is formed on a substrate. Next, a laser beam is irradiated from above the support film to form via holes in the semi-cured curable resin. Thereafter, the support film is peeled off, and the semi-cured curable resin layer is cured.

[0005] International Publication No. 2012 / 042846

[0006] However, even when forming a pattern using laser ablation processing as in the above-mentioned Patent Document 1, it is possible that laser light is refracted in the semi-cured curable resin, causing defects in the formed pattern. If defects occur in the curable resin pattern, there is a risk that the accuracy of the pattern to be formed thereafter will decrease.

[0007] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a pattern forming method that can form a fine pattern with high precision.

[0008] A pattern forming method according to one embodiment of the present disclosure includes a lamination step of laminating a curable resin layer and a support film on a substrate; a curing step of curing the entire curable resin layer; a processing step of irradiating the cured curable resin with excimer laser light from the support film side through a mask to process the curable resin layer into a predetermined pattern; a peeling step of peeling the support film from the processed curable resin; and a formation step of forming a plating layer using the processed curable resin layer as a mask, then removing the curable resin, and forming a wiring pattern using the plating layer on the substrate.

[0009] In this pattern formation method, the entire curable resin layer is cured before processing the curable resin layer into a predetermined pattern with excimer laser light. This makes it possible to suppress refraction of excimer laser light in the curable resin layer when processing the cured curable resin layer. Furthermore, in this pattern formation method, when processing the cured curable resin layer, excimer laser light is irradiated onto the cured curable resin from the support film side. Therefore, the support film functions as a protective material that protects the processed surface of the cured curable resin layer. Therefore, in this pattern formation method, the occurrence of damage to the curable resin during processing is suppressed, and fine patterns can be formed with high precision.

[0010] The line and space L / S of the wiring pattern may be 5 / 5 μm or less. As described above, this pattern formation method suppresses the occurrence of defects in the curable resin layer during the processing step. Therefore, it is suitable for forming a fine wiring pattern with a line and space L / S of 5 / 5 μm or less.

[0011] The aspect ratio of the wiring pattern may be 0.5 to 20. As described above, this pattern formation method suppresses the occurrence of defects in the curable resin layer during the processing step, and is therefore suitable for forming a fine wiring pattern with an aspect ratio of 0.5 to 20.

[0012] The curable resin layer may be made of a photocurable resin, in which case the entire curable resin layer can be easily cured by light irradiation.

[0013] The curable resin layer may be made of a thermosetting resin, and the entire curable resin layer can be easily cured by heating.

[0014] According to the present disclosure, it is possible to form finer patterns with high precision.

[0015] 1 is a schematic cross-sectional view showing a pattern formation structure used in a pattern formation method according to an embodiment of the present disclosure; FIG. 2 is a flowchart showing a pattern formation method according to an embodiment of the present disclosure; FIG. 3 is a schematic cross-sectional view showing a lamination step; FIG. 4 is a schematic cross-sectional view showing a curing step; FIG. 5 is a schematic cross-sectional view showing a processing step; FIG. 6 is a schematic cross-sectional view showing a formation step; FIG. 8 is a schematic cross-sectional view showing a step subsequent to FIG.

[0016] Hereinafter, preferred embodiments of a pattern forming method according to one aspect of the present disclosure will be described in detail with reference to the drawings.

[0017] 1 is a schematic cross-sectional view showing a pattern formation structure used in a pattern formation method according to an embodiment of the present disclosure. As shown in FIG. 1, the pattern formation structure 1 includes a substrate 2, a curable resin layer 3 laminated on the substrate 2, and a support film 4 laminated on the curable resin layer 3. The substrate 2 is a component on which a wiring pattern 16 (see FIG. 9) is formed. The substrate 2 is also an adherend for the curable resin layer 3. Examples of the substrate 2 include a silicon wafer, a silicon wafer with a film on which a metal such as Cu is vapor-deposited, and a copper-clad laminate.

[0018] The curable resin layer 3 is composed of, for example, a photocurable resin or a thermosetting resin. Here, the curable resin layer 3 is composed of a negative photocurable resin 11. The photocurable resin 11 may be in the form of a film, or may be applied in liquid form. The liquid photocurable resin 11 is produced by stirring the materials. There are no particular limitations on the stirring (dispersion) method, but stirring may be performed by applying heat, or in an inert gas atmosphere, a reduced pressure atmosphere, or a pressurized atmosphere. Foreign matter can be removed by filtering the resin composition after stirring is complete. The film-like photocurable resin 11 is provided, for example, by uniformly applying a solution of the photocurable resin composition to a support film and drying it.

[0019] In order to achieve a high etching rate during laser ablation processing, which will be described later, the photocurable resin 11 is designed taking into consideration 1) the ease with which molecular bonds are broken when irradiated with laser light, and 2) the absorbency for the wavelength of laser light. To satisfy 1), a compound with lower molecular bond energy is selected. To satisfy 2), a component that absorbs the wavelength of laser light is contained. The photocurable resin 11 contains a polymerizable compound as component (A) and an ultraviolet absorber as component (B). Either component (A) or component (B) may be contained in a larger amount, or may be mixed with other components.

[0020] The polymerizable compound is selected assuming that it will be polymerized after laminating the photocurable resin 11 on the substrate 2. Polymerization after lamination ensures the lamination or coating properties before lamination and reduces tackiness after polymerization. Examples of the polymerizable compound include a compound having a polymerizable ethylenically unsaturated bond within the molecule. Examples of component (A) include (meth)acrylic resin, urethane acrylate, and epoxy acrylate. Component (A) may be a non-aromatic photopolymerizable compound due to its low molecular bond energy. Even when component (A) is mixed with an aromatic compound, or when a portion of component (A) contains an aromatic functional group, a high etching rate during laser ablation processing can be achieved by adjusting the ratio.

[0021] The ultraviolet absorber is not particularly limited as long as it is a component that absorbs light of the desired wavelength. Examples of ultraviolet absorbers that can be used include known absorbers that can absorb laser light such as ArF (wavelength: 193 nm), KrF (wavelength: 248 nm), XeCl (wavelength: 308 nm), and XeF (wavelength: 351 nm). Examples of such absorbers include benzotriazole-based absorbers, triazine-based absorbers, salicylic acid derivative-based absorbers, and benzophenone-based absorbers.

[0022] The ultraviolet absorber may have a polymerizable unsaturated group. Ultraviolet absorbers are classified into a type that generates radicals upon absorbing ultraviolet light and a type that does not generate radicals upon absorbing ultraviolet light. The ultraviolet absorber of the type that generates radicals contains a photopolymerization initiator. By including a photopolymerization initiator, the photocurable resin 11 can be cured with ultraviolet light before or after laser ablation processing, thereby improving the handleability of the pattern formation structure 1.

[0023] Examples of the photopolymerization initiator include aromatic ketones such as 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1 and 2-methyl-1-[4-(methylthio)phenyl-2-morpholino-propanone-1], quinones such as alkylanthranequinone, benzoin ether compounds such as benzoin alkyl ether, benzoin compounds such as benzoin and alkylbenzoin, benzyl derivatives such as benzyl dimethyl ketal, 2,4,5-triarylimidazole dimers such as 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer and 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, and acridine derivatives such as 9-phenylacridine and 1,7-bis(9,9'-acridinyl)heptane. These photopolymerization initiators may be used alone or in combination of two or more.

[0024] When a film-like photocurable resin 11 is used, the photocurable resin 11 may contain a binder polymer from the viewpoint of film-forming properties. The binder polymer is preferably a material compatible with the components (A) and (B) from the viewpoint of storage stability. The binder polymer may be a component that is more flexible than the polymerizable compound of the component (A). This ensures flexibility of the curable resin layer 3 after curing. Examples of binder polymers that can be used include (meth)acrylic resins, urethane resins, epoxy resins, amide resins, amide-epoxy resins, alkyd resins, and polyimide resins. Among these resins, (meth)acrylic resins are preferred from the viewpoint of contributing to the rate of laser ablation processing, i.e., from the viewpoint of low molecular binding energy.

[0025] As the binder polymer, it is preferable to select a resin type whose basic skeleton is non-aromatic from the viewpoint of low molecular binding energy. Here, the non-aromatic basic skeleton means that the basic skeleton repeated multiple times by polymerization does not contain aromatics, and does not mean aromatics located only at the terminals, etc. Aromatic binder polymers and aliphatic polymers may be mixed to balance the etching rate.

[0026] The molecular weight of the binder polymer varies depending on the state of the photocurable resin 11. When using a film-like photocurable resin 11, for example, the molecular weight can be selected so as to balance the film formability and the rate of laser ablation processing. By ensuring a sufficient molecular weight, it is possible to ensure film formability and prevent dripping during film formation and storage. By not making the molecular weight excessive, it is possible to prevent a decrease in the rate of laser ablation processing. When using a liquid photocurable resin 11, the rate of laser ablation processing can be increased by designing the molecular weight to be as low as possible within the range that can be applied.

[0027] The photocurable resin 11 may contain a thermal curing accelerator. The thermal curing accelerator is not particularly limited as long as it can thermally cure the photocurable resin composition, and can be appropriately selected from commonly used thermal curing accelerators. Adding a thermal curing accelerator allows the photocurable resin 11 to be cured at a lower temperature, thereby improving the handleability of the pattern-forming structure 1. Examples of thermal curing accelerators include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These thermal curing accelerators may be used alone or in combination of two or more.

[0028] The photocurable resin 11 may contain a polymerization inhibitor. By including a polymerization inhibitor in the photocurable resin 11, the shelf life and work life of the photocurable resin composition can be extended. Furthermore, unwanted polymerization during laser ablation processing can be suppressed. Here, unwanted polymerization refers to radicals generated from the photopolymerization initiator by the laser light during laser ablation processing, causing polymerization to proceed. The polymerization inhibitor is a material that has a polymerization inhibitor effect against radical polymerization. Examples of polymerization inhibitors include catechols such as t-butylcatechol; hydroquinones such as hydroquinone, methylhydroquinone, t-butylhydroquinone, and p-methoxyphenol; alkoxyquinones such as methoquinone; and benzoquinones such as p-benzoquinone, methyl-p-benzoquinone, and t-butyl-p-benzoquinone.

[0029] The photocurable resin 11 may contain a solvent. When a liquid photocurable resin 11 is used, it is preferable that the photocurable resin 11 contains a solvent from the viewpoints of ease of viscosity adjustment and ease of manufacturing and inspection. When a film-like photocurable resin 11 is used, it is preferable that the solvent content is small. Solvent that is not completely removed during processes such as coating and drying may remain in the photocurable resin 11.

[0030] The photocurable resin 11 may optionally contain dyes such as malachite green, Victoria Pure Blue, brilliant green, and methyl violet; photocoloring agents such as leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline; thermal color-developing inhibitors; plasticizers such as p-toluenesulfonamide; pigments; fillers; antifoaming agents; flame retardants; stabilizers; adhesion promoters; leveling agents; release promoters; antioxidants; fragrances; imaging agents; and thermal crosslinking agents. These components may be contained in an amount of, for example, approximately 0.01 to 20 parts by mass each, per 100 parts by mass of the total solid content of component (A) and component (B). These materials may be used alone or in combination of two or more.

[0031] The support film 4 is made of a polymer film having heat resistance and solvent resistance, such as a polyolefin such as polypropylene or polyethylene, or a polyester such as polyethylene terephthalate. Among these films, polyethylene terephthalate (PET) film is preferred from the viewpoint of transparency. The PET film contains particles to improve the fluidity and releasability during molding. Examples of particles that can be used include inorganic particles such as calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, and molybdenum sulfide; organic particles such as ion exchange resins, crosslinked polymers, and calcium oxalate; and precipitated particles formed during polyester polymerization.

[0032] Next, a pattern forming method using the above-described pattern formation structure 1 will be described in detail.

[0033] 2 is a flowchart showing a pattern formation method according to an embodiment of the present disclosure, which includes a laminating step (step S01), a curing step (step S02), a processing step (step S03), a peeling step (step S04), and a forming step (step S05).

[0034] The lamination step S01 is a step of laminating a curable resin layer 3 and a support film 4 on a substrate 2, as shown in Fig. 3. The method of laminating the photocurable resin 11 on the substrate 2 differs depending on whether the photocurable resin 11 is in liquid form or in film form. When the photocurable resin 11 is in liquid form, the photocurable resin 11 can be laminated by applying a photocurable resin composition to the substrate 2 and drying it. Examples of methods for applying the photocurable resin composition include spraying, roll coating, spin coating, slit die coating, bar coating, inkjet printing, screen printing, gravure coating, curtain coating, and knife coating.

[0035] The film thickness of the photocurable resin 11 before drying is preferably set larger than the target value, taking into consideration the reduction in film thickness due to the evaporation of the solvent and the flow of the photocurable resin composition during drying. To reduce the film thickness of the photocurable resin 11 after drying, the photocurable resin composition may contain a large amount of solvent, and the rate of film thickness reduction during drying may be increased by the evaporation of the solvent. The residual solvent rate after drying may be 10% by mass or less, 5% by mass or less, or 2% by mass or less.

[0036] The film thickness of the photocurable resin 11 after drying is, for example, 1 to 200 μm. The film thickness of the photocurable resin 11 after drying may be 5 to 100 μm, or may be 10 to 50 μm. By making the film thickness 1 μm or more, coating becomes industrially easy to achieve. By making the film thickness 200 μm or less, it is possible to suppress insufficient evaporation of the solvent and the occurrence of abnormal appearance. When making the film thickness 100 μm or more, a method can be adopted in which the photocurable resin composition is coated to a thickness of 100 μm or less, and then two or more photocurable resin composition layers are laminated together.

[0037] The photocurable resin 11 formed by coating or the like may be heated at 50 to 250°C. The heating temperature may be 50 to 200°C. Heating may be performed in an inert atmosphere such as nitrogen, or may be performed under reduced pressure. There is no particular limit to the drying time. The drying history may include temperature increases and decreases, or may be at a constant temperature. When drying including temperature increases and decreases is performed, the surface of the photocurable resin 11 after drying tends to be flatter.

[0038] When the photocurable resin 11 is in a film form, the photocurable resin 11 can be laminated by heating the photocurable resin 11 while pressing it against the substrate 2. From the viewpoint of adhesion and conformability to the substrate 2, the photocurable resin 11 may be pressed under reduced pressure. The heating temperature may be, for example, room temperature to 130°C. The pressure during pressing may be, for example, about 0.01 to 1.0 MPa (0.1 to 10 kgf / cm). ２ To further improve the lamination property, the substrate 2 may be preheated and heated after lamination.

[0039] The curing step S02 is a step of curing the entire curable resin layer 3. In the curing step S02, as shown in FIG. 4, light 13 is irradiated onto the entire surface of the photocurable resin 11 through the support film 4, thereby curing the entire photocurable resin 11. The light 13 is, for example, ultraviolet light. An ultraviolet lamp can be used as a light source for the light 13. The irradiation intensity of the light 13 is, for example, 1 to 100 mW. The irradiation time of the light 13 is, for example, 1 to 1000 seconds.

[0040] Here, curing means completely or almost completely curing the curable resin layer 3. The curing rate F of the curable resin layer 3 after the curing step is, for example, 50% to 100%. The curing rate F may be 85% or more, or may be 90% or more. The curing rate F is calculated by F = ((T1 - T2) / T1) × 100, where T1 is the curing time of the curable resin composition in solution, and T2 is the curing time of the curable resin composition after the curing step. The curing time is measured, for example, in accordance with JIS C 6521, item 5.7 "Curing time test".

[0041] The processing step S03 is a step of processing the curable resin layer 3 into a predetermined pattern. In the processing step, as shown in Fig. 5 , the cured curable resin layer 3 is irradiated with excimer laser light 15 from the support film 4 side through a mask 14, and the curable resin layer 3 is processed into a predetermined pattern. That is, in the processing step, laser ablation processing is performed on the cured curable resin layer 3 together with the support film 4 using the excimer laser light 15. Here, the cured curable resin layer 3 is processed into a line shape, and a mask for forming a plating layer in the subsequent formation step S05 is formed on the substrate 2.

[0042] Examples of light sources for the excimer laser light 15 include an F2 excimer laser (wavelength: 157 nm), an ArF excimer laser (wavelength: 193 nm), a KrF excimer laser (wavelength: 248 nm), a XeCl excimer laser (wavelength: 308 nm), and a XeF excimer laser (wavelength: 351 nm). Generally, the higher the energy density of the excimer laser light 15 per shot on the surface of the curable resin layer 3, the higher the rate of laser ablation processing. However, once the energy density exceeds a certain level, the rate of laser ablation processing saturates. Depending on the processing area or the cost of the processing device, and taking the above-mentioned circumstances into consideration, the energy density of the excimer laser light 15 per shot on the surface of the curable resin layer 3 is, for example, 10 to 2000 mJ / cm. ２ and 100 to 1500 mJ / cm ２ may be.

[0043] A focusing optical system or an imaging optical system can be used as the optical system for the excimer laser light 15. When processing the curable resin layer 3 into a predetermined pattern, it is preferable to use an imaging optical system from the viewpoint of throughput. The reduction projection magnification of the imaging optical system may be, for example, 1 to 300 times, or may be 1 to 20 times.

[0044] The peeling step S04 is a step of peeling the support film 4 from the cured curable resin layer 3, as shown in FIG. 6 . Peeling of the support film 4 from the curable resin layer 3 is performed, for example, by an automatic peeler. By peeling the support film 4, a cured curable resin layer 3 processed into a line shape is formed on the substrate 2, as shown in FIG. 7 . Irradiation marks (holes) corresponding to the irradiation with the excimer laser light 15 in the processing step are formed in the support film 4 peeled off in the peeling step. Debris 20 may adhere around the irradiation marks when the curable resin layer 3 is laser ablated. The debris 20 is, for example, charcoal formed when the support film 4 is scorched by the irradiation with the excimer laser light 15. By having the debris 20 adhere to the support film 4, the step of cleaning the debris from the curable resin layer 3 can be omitted, thereby simplifying the steps of the pattern formation method.

[0045] The forming step S05 is a step of forming a wiring pattern 16 on the substrate. In this forming step, as shown in FIG. 8 , a plating layer 17 is formed using a predetermined pattern of the curable resin layer 3 as a mask. Examples of materials for the plating layer 17 include Cu, Ni, and Sn. The plating layer 17 can be formed by electroplating, for example. When forming the plating layer 17, a desmear treatment may be performed on the surface of the substrate 2 in advance to provide a seed layer for forming the plating layer 17 on the surface.

[0046] 9 , after the plating layer 17 is formed, the curable resin layer 3 is removed, and a wiring pattern 16 made of the plating layer 17 is formed on the substrate 2. If a seed layer is formed on the surface of the substrate 2, the seed layer is removed by etching or the like after removing the curable resin layer 3, and the wiring patterns 16, 16 are electrically separated from each other. Examples of methods for removing the curable resin layer 3 include a wet stripping method using an inorganic alkaline aqueous solution or an organic alkaline aqueous solution and an organic solvent, and a dry etching method using plasma treatment.

[0047] Examples of the base of the alkaline aqueous solution used in the wet stripping method include alkali hydroxides such as lithium, sodium, or potassium hydroxide, alkali carbonates such as lithium, sodium, potassium, or ammonium carbonates and bicarbonates, alkali metal phosphates such as potassium phosphate and sodium phosphate, alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate, borax (sodium tetraborate), sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1,3-propanediol, 1,3-diamino-2-propanol, morpholine, etc. Examples of the wet stripping method include methods using a dipping method, a paddle method, a spray method, brushing, slapping, scrubbing, and shaking immersion.

[0048] In this embodiment, the line and space L / S of the wiring pattern 16 obtained after the formation process is 5 / 5 μm or less. That is, in this embodiment, the line width L of the wiring pattern 16 is 5 μm or less, and the spacing S between adjacent wiring patterns 16, 16 is 5 μm or less. Also, in this embodiment, the aspect ratio of the wiring pattern 16 (the ratio of the height H of the wiring pattern 16 to the line width L of the wiring pattern 16) is 0.5 to 20. The aspect ratio of the wiring pattern 16 may be 1 to 10.

[0049] As described above, in this pattern formation method, the entire curable resin layer 3 is cured before the curable resin layer 3 is processed into a predetermined pattern with the excimer laser light 15. This makes it possible to suppress refraction of the excimer laser light 15 at the curable resin layer 3 when processing the cured curable resin layer 3. Furthermore, in this pattern formation method, when processing the cured curable resin layer 3, the excimer laser light 15 is irradiated onto the cured curable resin layer 3 from the support film 4 side. Therefore, the support film 4 functions as a protective material that protects the processed surface of the cured curable resin layer 3. Therefore, in this pattern formation method, the occurrence of damage to the curable resin layer 3 during processing is suppressed, and fine patterns can be formed with high precision.

[0050] In this embodiment, the line and space L / S of the wiring pattern 16 is 5 / 5 μm or less. As described above, this pattern formation method suppresses the occurrence of defects in the curable resin layer 3 during the processing step. Therefore, this method is suitable for forming a fine wiring pattern 16 having a line and space L / S of 5 / 5 μm or less.

[0051] In this embodiment, the aspect ratio of the wiring pattern 16 is 0.5 to 20. As described above, this pattern formation method suppresses the occurrence of damage to the curable resin layer during the processing step. Therefore, it is suitable for forming a fine wiring pattern with an aspect ratio of 1 to 10.

[0052] In this embodiment, the curable resin layer 3 is made of a photocurable resin 11. This allows the entire curable resin layer 3 to be easily cured by light irradiation.

[0053] The present disclosure is not limited to the above embodiment. For example, the curable resin layer 3 may be made of a thermosetting resin. In this case, the entire curable resin layer 3 can be easily cured by heating. Examples of thermosetting resins that can be used include phenolic resin, epoxy resin, melamine resin, alkyd resin, silicone resin, and thermosetting polyimide. When a thermosetting resin is used, the curing conditions in the curing step S02 can be, for example, a temperature of 120°C or higher in an oven for 30 minutes or longer.

[0054] 2...substrate, 3...curable resin layer, 4...support film, 11...photocurable resin, 14...mask, 15...excimer laser light, 16...wiring pattern, 17...plating layer.

Claims

1. a lamination step of laminating a curable resin layer and a support film on a substrate; a curing step of curing the entire curable resin layer; a processing step of irradiating the cured curable resin with excimer laser light from the support film side through a mask to process the curable resin layer into a predetermined pattern; a peeling step of peeling the support film from the processed curable resin; a forming step of forming a plating layer using the processed curable resin layer as a mask, and then removing the curable resin to form a wiring pattern on the substrate using the plating layer.

2. 2. The pattern forming method according to claim 1, wherein the line and space L / S of the wiring pattern is 5 / 5 [mu]m or less.

3. 2. The method for forming a pattern according to claim 1, wherein the aspect ratio of the wiring pattern is 0.5 to 20.

4. 4. The method for forming a pattern according to claim 1, wherein the curable resin layer is made of a photocurable resin.

5. 4. The method for forming a pattern according to claim 1, wherein the curable resin layer is made of a thermosetting resin.