Electroplating device and electroplating method

Abstract

An electroplating device and an electroplating method. The electroplating device comprises: an electroplating cavity (100), a wafer holding apparatus (200), a stirring mechanism (300), and a drive mechanism (400), wherein the stirring mechanism (300) is arranged in the electroplating cavity (100), and when the wafer holding apparatus (200) holds a wafer, the stirring mechanism (300) is parallel to the wafer; the drive mechanism (400) is configured to drive the stirring mechanism (300) to perform continuous main-period reciprocating motions parallel to the wafer, such that the stirring mechanism (300) stirs an electroplating solution; each main-period reciprocating motion comprises N continuous sub-period reciprocating motions, N being an integer greater than or equal to 2; and within the same main period, the end-point position of the previous sub-period is the start-point position of the following adjacent sub-period, and the sub-stroke within the same sub-period is a real number greater than 0, the sub-stroke being the distance between the end-point position and the start-point position within the same sub-period. By means of regulating and controlling the motion mode of a stirring mechanism, the present invention achieves the effect of uniform electroplating while improving the electroplating efficiency.

Description

Electroplating equipment and electroplating method Technical Field

[0001] The present invention belongs to the technical field of semiconductor electroplating, and in particular relates to electroplating equipment and an electroplating method. Background Art

[0002] In the post-Moore era, advanced packaging technologies for chip integration are playing an increasingly important role. 3D stacking, regional silicon interconnection, and embedded multi-chip interconnection bridging technologies all require high-aspect ratio via-filling electroplating. Currently, high-aspect ratio via-filling processes face some recognized and significant difficulties: The plating solution struggles to fully penetrate the deep holes. This failure can lead to plating defects such as virtual plating and voids during the electroplating process, reducing the yield rate of the electroplated product. Furthermore, as the aspect ratio increases, the proportion of diffusion-controlled areas within the plated hole also increases, reducing both plating efficiency and quality. To address these issues, enhancing plating solution agitation is one solution. To this end, a stirring mechanism can be incorporated into the electroplating equipment, capable of swinging either horizontally or vertically within the plating solution. The swing direction of the stirring mechanism depends on the electroplating mode of the electroplating machine. When the electroplating mode of the electroplating machine is horizontal electroplating, the swing mode of the stirring mechanism in the electroplating solution is horizontal swing; when the electroplating mode of the electroplating machine is vertical hanging plating, the swing mode of the stirring mechanism in the electroplating solution is vertical swing. The stirring mechanism swinging in the electroplating solution is used to enhance the mass transfer of the electroplating solution and increase the relative speed between the electroplating solution and the surface of the workpiece. As an exemplary stirring mechanism, the stirring paddle has a plurality of parallel blades, and there is a certain gap between adjacent blades. When the stirring paddle moves, a liquid vortex is generated. The liquid vortex generates a high-speed stirring flow on the lower surface (facing down) of the wafer, thereby enhancing mass transfer. In order to further enhance the mass transfer of the plating solution, the method usually chosen is to simply increase the speed of the reciprocating motion of the paddle. However, the high-speed reciprocating motion of the stirring paddle will cause a large difference in the flow rate of the plating solution in each area of ​​the plating chamber, which in turn will cause a large difference in the flow rate of the plating solution in each area of ​​the workpiece. The mass transfer difference in each area is also large, resulting in uneven electroplating and reduced electroplating quality.

[0003] Summary of the Invention

[0004] In order to avoid simply increasing the speed of the reciprocating motion of the blades, which will lead to large differences in the flow rate of the plating solution at different locations in the plating chamber, thereby causing uneven electroplating, the present invention regulates the movement mode of the stirring mechanism to improve the electroplating efficiency while enhancing the ability of the plating solution to penetrate deep holes, thereby achieving a uniform electroplating effect.

[0005] In the first aspect, the present application proposes an electroplating device, comprising: a plating chamber, a wafer holding device, a stirring mechanism and a driving mechanism; wherein the plating chamber is used to accommodate a plating liquid; the wafer holding device is configured to hold a wafer; the stirring mechanism is arranged inside the plating chamber, and when the wafer holding device holds a wafer, the stirring mechanism is arranged parallel to the wafer; the driving mechanism is configured to drive the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism stirs the plating liquid; wherein each main periodic reciprocating motion includes N consecutive sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; within the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is at the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

[0006] According to a specific implementation method of an embodiment of the present application, the starting position of the main periodic reciprocating motion is the motion origin position, the end position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

[0007] According to a specific implementation of the embodiment of the present application, the range of the main stroke includes: 10-30 mm.

[0008] According to a specific implementation of the embodiment of the present application, in the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

[0009] According to a specific implementation of an embodiment of the present application, when N is greater than or equal to 3, the auxiliary strokes in the same main periodic reciprocating motion may be equal or unequal.

[0010] According to a specific implementation of the embodiment of the present application, the range of the secondary stroke includes: 1-10 mm.

[0011] According to a specific implementation of the embodiment of the present application, the stirring mechanism performs the secondary periodic reciprocating motion at a preset frequency, wherein the range of the preset frequency includes: 3-12 Hz.

[0012] According to a specific implementation of the embodiment of the present application, the stirring mechanism performs the secondary periodic reciprocating motion with a preset amplitude, wherein the range of the preset amplitude includes: 12-20 mm.

[0013] According to a specific implementation of the embodiment of the present application, the time range used by each of the sub-cycles includes: 1-600s.

[0014] In the second aspect, the present application proposes an electroplating method, comprising: maintaining a wafer in an electroplating chamber containing a plating liquid; a driving mechanism drives a stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism stirs the plating liquid; wherein each of the main periodic reciprocating motions includes N continuous sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitude and frequency of adjacent sub-periodic reciprocating motions are equal; within the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is at the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

[0015] According to a specific implementation method of an embodiment of the present application, the starting position of the main periodic reciprocating motion is the motion origin position, the end position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

[0016] According to a specific implementation of the embodiment of the present application, in the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

[0017] According to a specific implementation of an embodiment of the present application, when N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

[0018] The electroplating equipment and electroplating method of the present invention regulate the motion mode of the stirring mechanism by performing a continuous main periodic reciprocating motion of the stirring mechanism in the electroplating chamber, and decomposing each main periodic reciprocating motion into N continuous sub-periodic reciprocating motions with the same motion mode, where N is an integer greater than or equal to 2. While improving the electroplating efficiency, the present invention can enhance the ability of the electroplating solution to penetrate deep holes, thereby achieving a uniform electroplating effect. Other features and advantages of the present invention will be described in the subsequent description, and will partially become apparent from the description, or will be understood through implementation of the present invention. The objects and other advantages of the present invention can be achieved and obtained through the structures indicated in the description and the accompanying drawings.

[0019] Summary of the Figures

[0020] The features and properties of the present invention are further described by the following examples and accompanying drawings.

[0021] FIG1 is a schematic diagram showing a motion mode of a driving mechanism driving a stirring mechanism of an electroplating device in the prior art;

[0022] FIG2 shows the flow rate of the electroplating solution on the lower surface of the wafer under the motion mode of the stirring mechanism in FIG1 ;

[0023] FIG3 shows a schematic structural diagram of an electroplating device according to an embodiment of the present invention;

[0024] FIG4 shows a schematic top view of a stirring mechanism according to an embodiment of the present invention;

[0025] FIG5 is a schematic diagram showing a motion mode of a stirring mechanism according to an embodiment of the present invention;

[0026] FIG6 shows another schematic diagram of a motion mode of a stirring mechanism according to an embodiment of the present invention; and

[0027] FIG. 7 shows the flow rate of the electroplating solution on the lower surface of the wafer under the motion mode of the stirring mechanism according to the present invention.

[0028] Preferred embodiments of the present invention

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0030] In electroplating equipment, in order to enhance the agitation of the plating solution, a stirring mechanism can be installed below and opposite the wafer. During electroplating, the stirring mechanism reciprocates in a direction parallel to the wafer to enhance the agitation of the plating solution. Please refer to Figure 1, which shows a schematic diagram of the motion mode of the driving mechanism driving the stirring mechanism of the electroplating equipment in the prior art, wherein the horizontal axis represents the process time in seconds and the vertical axis represents the change in the position of the stirring mechanism in mm. The figure uses the change of the stirring mechanism position over time to represent the motion mode of the driving mechanism driving the stirring mechanism. The driving mechanism drives the stirring mechanism to vibrate at a specified frequency and a specified amplitude inside the electroplating chamber. As shown in Figure 1, the amplitude is approximately 20 mm and the frequency is approximately 5 Hz. The flow rate of the plating solution at the lower surface of the wafer under this vibration mode is simulated and calculated. The simulation results are shown in Figure 2. The flow rates of the plating solution at different locations on the lower surface of the wafer vary greatly. As can be seen from the figure, the maximum flow rate of the plating solution at different locations on the lower surface of the wafer is about 160 mm / s, and the minimum flow rate is about 60 mm / s, with a difference of about 100 mm / s. This results in a large difference in the amount of plating solution contacted at different locations on the lower surface of the wafer, which in turn affects the uniformity of electroplating.

[0031] The present invention aims to improve the vibration mode of the stirring mechanism so as to better control the stirring effect of the electroplating solution and achieve the purpose of uniform electroplating.

[0032] Referring to Figures 3 and 4, an embodiment of the present invention discloses an electroplating apparatus for electroplating a wafer surface. The electroplating apparatus includes a plating chamber 100, a wafer holding device 200, a stirring mechanism 300, and a drive mechanism 400. The plating chamber 100 is used to contain the plating solution; the wafer holding device 200 is used to hold a wafer 500; and the stirring mechanism 300 includes a plurality of parallel, strip-shaped paddles 301, with gaps 302 formed between adjacent paddles 301. During the electroplating process, the gaps 302 between adjacent paddles 301 allow liquid and an electric field to pass through. The paddles 301 are made of an insulator, such as a plastic material including PVC, PC, CPVC, PPS, PEEK, PTFE, etc. The stirring mechanism 300 is disposed within the plating chamber 100. When the wafer 500 is held on the wafer holding device 200, the stirring mechanism 300 is parallel to the wafer 500.

[0033] The driving mechanism 400 is arranged outside the electroplating chamber 100. The driving mechanism 400 is configured to drive the stirring mechanism 300 to generate continuous main periodic reciprocating motions in a direction parallel to the wafer 500 held by the wafer holding device 200, so that the stirring mechanism 300 stirs the electroplating solution. Each main periodic reciprocating motion includes N consecutive sub-periodic reciprocating motions, where N is an integer greater than or equal to 2; and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; within the same main cycle, the end position of the stirring mechanism 300 in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism 300 in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism 300 in the same sub-cycle. In some embodiments, during the same process, the amplitude and frequency of each sub-periodic reciprocating motion are equal, which can ensure strong electroplating solution agitation while making the difference in electroplating solution flow rate at various locations in the electroplating chamber more uniform. Specifically, when all locations in the electroplating chamber are able to experience the plating solutions at various speeds within a sub-cycle, the average speed of the plating solution will be maintained within a relatively stable range, thereby improving the uniformity of the plating solution.

[0034] Furthermore, the drive mechanism 400 includes at least one drive element, which may include, but is not limited to, a motor, an electric motor, etc. When the number of drive elements is greater than or equal to two, the drive elements are symmetrically arranged about the plating chamber 100 to stabilize and balance the stirring mechanism 300, thereby achieving the purpose of stably stirring the plating solution. As shown in Figure 3, in this embodiment, the drive mechanism 400 includes two drive elements, which are symmetrically arranged on either side of the plating chamber 100.

[0035] For example, referring to FIG3 , when the stirring mechanism 300 is reciprocating in the electroplating chamber 100 , the stirring mechanism 300 is located at the starting position of the movement when the initial state is set, and the driving mechanism 400 drives the stirring mechanism 300 to perform continuous main periodic reciprocating motion parallel to the wafer 500 in the wafer holding device 200 . For ease of understanding, the starting position of the stirring mechanism 300 is defined as the movement origin position in this application; the end position of the stirring mechanism 300 is defined as the reversal position, and the reversal position is the position of the stirring mechanism 300 farthest from the movement origin position during the main periodic reciprocating motion; then a main periodic reciprocating motion is specifically as follows: the stirring mechanism 300 starts from the movement starting position, i.e., the movement origin position, moves toward the end position, reaches the movement end position, i.e., the reversal position, and then moves in the opposite direction toward the movement origin position, and ends at the movement origin position. The same process can include multiple repeated main periodic reciprocating motions to achieve the effect of the stirring mechanism 300 strengthening the agitation of the plating solution, thereby achieving uniform electroplating of the wafer 500. 5 , which shows two main cycles, in this embodiment, the movement origin position of the stirring mechanism 300 is 0 mm, and the reversal position is 32 mm.

[0036] Furthermore, each main periodic reciprocating motion of the stirring mechanism 300 specifically includes: the stirring mechanism 300 performs N sub-periodic reciprocating motions at a preset frequency f1 and a preset amplitude A1. As shown in Figure 5, each main cycle includes three sub-cycles, and the stirring mechanism 300's motion frequency in each sub-cycle is f1 and the motion amplitude is A1. In each main cycle, the stirring mechanism 300 undergoes three sub-periodic reciprocating motions, gradually moving from the origin to the reversal position. At the end of the main cycle, the stirring mechanism 300 returns to the origin and begins the next main periodic reciprocating motion.

[0037] Among them, a main periodic reciprocating motion includes a main stroke L and at least one sub-stroke M. The main stroke is the maximum distance between the stirring mechanism 300 and the origin of the motion, that is, the distance between the origin of the motion and the reversal position; the sub-stroke is the distance between the end position and the starting position of the stirring mechanism 300 in the same sub-cycle. It should be understood that the main stroke L is a value determined according to the size of the plating chamber 100. Generally, the size of the plating chamber 100 is determined, and the value of the main stroke L is a fixed value. For example, depending on the size of the plating chamber 100, the main stroke L is generally a certain value between 10-30mm, for example, it can be 10mm, 20mm, 30mm, etc.; and the number of sub-cycles N included in each main periodic reciprocating motion is an artificially set value, and N is an integer greater than or equal to 2, indicating that a main periodic reciprocating motion consists of N consecutive The main periodic reciprocating motion is composed of two sub-periodic reciprocating motions; the frequency f1 and amplitude A1 of each sub-periodic reciprocating motion are manually set values; for example, the frequency f1 is generally preset in the range of 3-12 Hz, for example, it can be 3 Hz, 5 Hz, 10 Hz, 12 Hz, etc.; the amplitude A1 is generally preset in the range of 12-20 mm, for example, it can be 12 mm, 15 mm, 18 mm, 20 mm, etc.; and the sub-stroke M of a sub-cycle is also a manually set value before the process starts, and the number of sub-strokes is N-1. It should be noted that the time t used for each sub-cycle in each main periodic reciprocating motion is generally preset in the range of 1-600 s, for example, it can be 1 s, 60 s, 100 s, 300 s, 600 s, etc.

[0038] Furthermore, when N is greater than or equal to 3, that is, the number of secondary strokes is greater than or equal to 2, all secondary strokes can be equal or unequal, and can be set according to actual process conditions during operation. Specifically, when N is greater than or equal to 3, it means that one main periodic reciprocating motion is composed of greater than or equal to 3 consecutive secondary periodic reciprocating motions, that is, the main stroke L is completed in N times, and the process of completing the main stroke L will generate N-1 secondary strokes, and these N-1 secondary strokes can be equal or unequal.

[0039] For example, referring to FIG5 , when N is equal to 3, that is, in this embodiment, when L includes two secondary strokes, the distance traveled after each secondary cycle can be set to be unequal, that is, secondary stroke M1 ≠ secondary stroke M2. As shown in FIG5 , a main periodic reciprocating motion includes a main stroke L and two secondary strokes M1 and M2, and the number of secondary periodic reciprocating motions in a main periodic reciprocating motion is N = 3; the preset frequency f1 in each secondary periodic reciprocating motion is 5 Hz, the preset amplitude A1 is 20 mm, and the time taken for each secondary cycle is t = 1 s; the main stroke is L = 12 mm, the secondary strokes M1 = 4, and M2 = 8.

[0040] Please refer to Figure 6. In another embodiment, when N is equal to 3, that is, when L includes two sub-strokes in this embodiment, the distance traveled after each sub-cycle is equal, that is, sub-stroke M1 = sub-stroke M2. It can be seen from Figure 6 that one main periodic reciprocating motion of the stirring mechanism 300 is composed of three sub-periodic reciprocating motions; one main periodic reciprocating motion includes one main stroke and two equal sub-strokes, that is, N = 3, M1 = M2 = 6mm, and main stroke L = 12mm; in each sub-periodic reciprocating motion, the vibration frequency of the stirring mechanism 300 is a preset frequency f1 = 5Hz, and a preset amplitude A1 = 20mm; the time t used for each sub-periodic reciprocating motion is 1s. When adjacent sub-periodic reciprocating motions are switched, the stirring mechanism 300 does not need to return to the motion origin of the current sub-period, but directly uses the end point of the current sub-period as the motion origin of the next sub-period to perform the motion of the next sub-period. In this way, by setting the starting position and end position of each sub-period, that is, setting the sub-stroke, it is possible to make the stirring mechanism 300 gradually move outward in the motion range of each sub-period within a main cycle, and the peak and valley values ​​of the stirring mechanism position gradually increase. In the last sub-period, the farthest moving position of the stirring mechanism 300 reaches the reversal position. Similarly, when the stirring mechanism 300 completes a main cycle in the electroplating chamber 100, the driving mechanism 400 drives the stirring mechanism 300 to the motion origin of the last sub-period, and then continues to drive the stirring mechanism 300 back to the motion origin of the first sub-period, that is, the motion origin of the main cycle, and then continues to perform the next main periodic reciprocating motion, thereby achieving the effect of fully stirring the electroplating solution.

[0041] The present invention also provides an electroplating method, wherein a wafer 500 is held in an electroplating chamber containing an electroplating solution and electroplated on the wafer 500. A stirring mechanism 300 is provided within the electroplating chamber 100 and parallel to the wafer 500. The stirring mechanism 300 is connected to a driving mechanism 400. The driving mechanism 400 drives the stirring mechanism 300 to perform continuous primary periodic reciprocating motions parallel to the wafer 500 so that the stirring mechanism 300 stirs the electroplating solution. Each primary periodic reciprocating motion includes N consecutive secondary periodic reciprocating motions, where N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent secondary periodic reciprocating motions are equal.

[0042] In the same main cycle, the end position of the stirring mechanism 300 in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism 300 in the same sub-cycle is a real number greater than 0, where the sub-stroke is the distance between the end position and the starting position of the stirring mechanism 300 in the same sub-cycle.

[0043] Furthermore, the starting position of the main periodic reciprocating motion is the origin position of the motion; the end position of the main periodic reciprocating motion is the reversal position; the reversal position is the position of the stirring mechanism farthest from the origin position of the motion during the main periodic reciprocating motion; each main periodic reciprocating motion has a main stroke, which is the distance between the origin position of the motion and the reversal position.

[0044] Furthermore, in the same process, the amplitude of each sub-periodic reciprocating motion is equal.

[0045] Furthermore, when N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

[0046] During the process according to the solution proposed in the present invention, the flow rate of the plating solution at various locations close to the lower surface of the wafer 500 is simulated and calculated. For the results, please refer to Figure 7, which shows the flow rate diagram of the plating solution close to the lower surface of the wafer 500 during each sub-periodic reciprocating motion of the main periodic reciprocating motion, wherein the horizontal axis represents the horizontal position coordinate of the wafer with the center of the wafer as the 0 coordinate, in mm, and the vertical axis represents the flow rate of the plating solution on the lower surface of the wafer, in mm / s; line 601 is the first sub-periodic Line 601 is the flow rate of the plating solution on the lower surface of the wafer 500 during the main periodic reciprocating motion; line 602 is the flow rate of the plating solution on the lower surface of the wafer 500 during the second sub-periodic reciprocating motion; line 603 is the flow rate of the plating solution on the lower surface of the wafer 500 during the third sub-periodic reciprocating motion; line 604 is the average flow rate of the plating solution on the lower surface of the wafer in the electroplating method of an embodiment of the present invention, specifically, the average flow rate of the plating solution at various locations on the lower surface of the wafer after undergoing a complete main periodic reciprocating motion. As shown in FIG7 , although the flow rate difference of the electroplating solution at various locations on the lower surface of the wafer is relatively large during the first, second, and third sub-periodic reciprocating motions, (approximately 100 mm / s), after a main periodic reciprocating motion is completed, i.e., after the first, second, and third sub-periodic reciprocating motions, it can be seen from line 604 that the flow rate of the electroplating solution at various locations on the lower surface of the wafer is basically maintained within a relatively stable range, with a small difference (approximately 20 mm / s), and the flow rate of the electroplating solution can also be maintained at a relatively high flow rate (approximately 110 mm / s). This shows that through the design of the electroplating equipment and electroplating method of the present invention, the flow rate of the electroplating solution on the lower surface of the wafer 500 can reach a relatively uniform and high level, thereby achieving a stable and uniform electroplating effect while ensuring sufficient stirring intensity of the electroplating solution.

[0047] Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electroplating device, characterized in that: include: Electroplating chamber, wafer holding device, stirring mechanism and driving mechanism; wherein, The electroplating chamber is used to contain the electroplating solution; The wafer holding device is configured to hold a wafer; The stirring mechanism is arranged inside the electroplating chamber, and when the wafer holding device holds a wafer, the stirring mechanism is arranged parallel to the wafer; The driving mechanism is configured to drive the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer so that the stirring mechanism stirs the electroplating solution; Each of the main periodic reciprocating motions includes N consecutive sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; In the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

2. The electroplating equipment according to claim 1, characterized in that: The starting position of the main periodic reciprocating motion is the motion origin position, and the end position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

3. The electroplating equipment according to claim 2, characterized in that: The range of the main stroke includes: 10-30mm.

4. The electroplating equipment according to claim 1, characterized in that: In the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

5. The electroplating equipment according to claim 1, characterized in that: When N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

6. The electroplating equipment according to claim 1 or 5, characterized in that: The range of the secondary stroke includes: 1-10mm.

7. The electroplating equipment according to claim 1, characterized in that: The stirring mechanism performs the secondary periodic reciprocating motion at a preset frequency, wherein the preset frequency range includes: 3-12 Hz.

8. The electroplating equipment according to claim 1 or 7, characterized in that: The stirring mechanism performs the secondary periodic reciprocating motion with a preset amplitude, wherein the preset amplitude ranges from 12 to 20 mm.

9. The electroplating equipment according to claim 1, characterized in that: The time used by each of the sub-cycles ranges from 1 to 600 seconds.

10. An electroplating method, characterized in that: include: maintaining the wafer in a plating chamber containing a plating solution; The driving mechanism drives the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism stirs the electroplating solution; Each of the main periodic reciprocating motions includes N consecutive sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; In the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

11. The electroplating method according to claim 10, characterized in that: The starting position of the main periodic reciprocating motion is the motion origin position, and the end position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

12. The electroplating method according to claim 11, characterized in that: In the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

13. The electroplating method according to claim 11, characterized in that: When N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

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