Gas inlet device and wafer growth apparatus

Abstract

The present application relates to the technical field of wafer growth, and discloses a gas inlet device and a wafer growth apparatus. The gas inlet device comprises: first pipelines, each having a first gas inlet end and a first gas outlet end; second pipelines, each having a second gas outlet end, the second gas outlet end being located between a corresponding first gas inlet end and first gas outlet end, and the second pipelines being in communication with the first pipelines by means of the second gas outlet ends; third pipelines, each having a third gas outlet end; and a flange, the flange defining a gas outlet, the gas outlet direction of the gas outlet being a first direction, and the gas outlet further having a second direction intersecting the first direction; and a plurality of gas holes in communication with the gas outlet being provided in the flange, the plurality of gas holes being provided at intervals in the second direction, the gas holes located in the middle being in communication with the first gas outlet ends, and the other gas holes being in communication with the third gas outlet ends or the second gas outlet ends. The present application can avoid mutual disturbance of gas flows that is easy to occur when an auxiliary reaction gas and a main reaction gas are mixed in a growth chamber, thereby increasing the stability of the wafer-out film thickness and the resistance between wafers.

Description

Air intake device and wafer growth equipment

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on August 30, 2023, with application number 202311111102.6 and invention name “An air intake device and wafer growth equipment”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application belongs to the field of wafer growth technology, and specifically relates to an air intake device and wafer growth equipment. Background Art

[0003] In semiconductor ASM (Automated Semiconductor Manufacturing) machines, due to the unreasonable design of the air inlet flange, the main reaction gas and the auxiliary reaction gas flow out of the air inlet flange and enter the wafer growth chamber, where they are mixed. However, since the different reaction gases are each a stream of gas, due to differences in flow rate and flow rate, turbulence is very likely to occur during the mixing process, resulting in frequent inconsistencies in the film thickness of semiconductor products and unstable resistance repeatability between semiconductor wafers, which seriously affects the controllability and stability of the process. Technical issues

[0004] The gas inlet device in the wafer growth equipment can easily cause disturbances in the gas being fed in, resulting in inconsistent film thickness of the prepared semiconductor products. Technical Solutions

[0005] In a first aspect, an embodiment of the present application provides an air intake device, comprising:

[0006] A first pipeline having a first air inlet end and a first air outlet end;

[0007] a second pipeline having a second gas outlet end, the second gas outlet end being located between the first gas inlet end and the first gas outlet end, the second pipeline being connected to the first pipeline through the second gas outlet end;

[0008] a third pipeline having a third gas outlet;

[0009] A flange is formed to enclose an air outlet, the air outlet direction of the air outlet is a first direction, and the air outlet also has a second direction intersecting with the first direction; the flange has a plurality of air cavities connected to the air outlet, the plurality of air cavities are arranged at intervals along the second direction, and the air cavity in the middle is connected to the first air outlet end, and the remaining air cavities are connected to the third air outlet end or the first air outlet end.

[0010] In some embodiments, the plurality of air pockets include a plurality of first air pockets and a plurality of second air pockets, the first air pockets and the second air pockets are alternately arranged along the second direction; and among the plurality of air pockets, at least the air pocket located in the middle is the first air pocket;

[0011] The first air cavity is communicated with the first air outlet end, and the second air cavity is communicated with the third air outlet end.

[0012] In some embodiments, among the plurality of air pockets arranged at intervals along the second direction, at least the air pockets located on both sides are the second air pockets.

[0013] In some embodiments, the flange further has a plurality of air outlet channels, the air outlet channels correspond to the air pockets, and the air outlet channels are connected between the air pockets and the air outlet.

[0014] In some embodiments, the flange includes a base plate and a cover plate, the cover plate is connected to the base plate, the air cavity is formed on a side of the base plate facing the cover plate, and the cover plate seals the air cavity.

[0015] In some embodiments, a first through groove is provided on the side of the substrate facing the cover plate, the first through groove corresponds to the air cavity, the first through groove is connected between the air cavity and the air outlet, and along the first direction, the cover plate covers the first through groove to form the air outlet channel.

[0016] In some embodiments, a second through groove is provided on the side of the cover plate facing the substrate, the second through groove corresponds to the air cavity, the second through groove is connected between the air cavity and the air outlet, and along the first direction, the substrate covers the opening of the second through groove to form the air outlet channel.

[0017] In some embodiments, a third through groove is provided on the side of the cover plate facing the substrate, and a fourth through groove is provided on the side of the substrate facing the cover plate, and the third through groove and the fourth through groove are both connected between the air cavity and the air outlet; the third through groove and the fourth through groove are arranged opposite to each other along the first direction to form the air outlet channel.

[0018] In some embodiments, along the first direction, the air outlet channel has a first side wall and a second side wall opposite to each other, and a first dimension a is defined between the first side wall and the second side wall, satisfying the following: 0.6 mm ≤ a ≤ 0.9 mm.

[0019] In some embodiments, the first dimension a satisfies: 0.8 mm ≤ a ≤ 0.9 mm.

[0020] In some embodiments, along the second direction, the air pocket has a second size b that satisfies: 56 mm ≤ b ≤ 60 mm.

[0021] In some embodiments, the second size b satisfies: 57.5 mm ≤ b ≤ 59 mm.

[0022] In a second aspect, the present application provides a wafer growth device comprising an air intake device as described in any embodiment of the first aspect.

[0023] In some embodiments, the system further comprises a growth chamber having a growth cavity with an opening at one end; the flange is connected to the growth chamber and seals the opening. Beneficial effects

[0024] The present application provides an air intake device and a wafer growth device, including a first pipeline, a third pipeline and a third pipeline. The present application connects the second outlet end of the second pipeline to the first pipeline and connects it between the first air intake end and the first air outlet end of the first pipeline, so that the gas in the second pipeline is mixed with the gas in the first pipeline before entering the flange, avoiding the mutual disturbance of the air flows caused by the air flows in the growth chamber after flowing out of the flange, making the gas supply more uniform, and improving the stability of the film thickness and the resistance stability between the wafers; at the same time, in the present application, at least the middle air cavity is connected to the first pipeline, and the evenly mixed gas is directly introduced into the middle area of ​​the wafer where the reaction is intense, so as to balance the growth rate of the middle and epitaxial parts and improve the uniformity of the film thickness when the wafer is output. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0026] FIG1 is an overall perspective view of an air intake device provided in an embodiment of the present application;

[0027] FIG2 is a partially cutaway perspective view of an air intake device provided in an embodiment of the present application;

[0028] FIG3 is a partial perspective view of an air intake device provided in an embodiment of the present application;

[0029] FIG4 is a perspective view of a flange in an air intake device provided in an embodiment of the present application;

[0030] FIG5 is a partial enlarged view of point B in FIG4 ;

[0031] FIG6 is a perspective cross-sectional view of a flange in an air intake device provided in an embodiment of the present application;

[0032] FIG7 is a partial enlarged view of point A in FIG6;

[0033] FIG8 is a side cross-sectional view of a flange in an air intake device provided in an embodiment of the present application;

[0034] FIG9 is a partial enlarged view of point D in FIG8 ;

[0035] FIG10 is a perspective view of a substrate in an air intake device provided in an embodiment of the present application;

[0036] FIG11 is a first partial cross-sectional perspective view of an air intake device provided in an embodiment of the present application (showing the second through groove);

[0037] FIG12 is a second partial cross-sectional perspective view of an air intake device provided in an embodiment of the present application (showing the third through slot and the fourth through slot);

[0038] FIG13 is a schematic exploded view of the structure of a wafer growth device provided in an embodiment of the present application;

[0039] Description of the drawings: 100, first pipeline; 101, first air inlet end; 102, first air outlet end; 110, second pipeline; 111, second air outlet end; 120, third pipeline; 121, third air outlet end; 200, flange; 210, substrate; 211, air outlet; 212, air cavity; 213, first air cavity; 214, second air cavity; 215, first through groove; 216, fourth through groove; 220, cover plate; 221, second through groove; 222, third through groove; 230, air outlet channel; 231, first side wall; 232, second side wall; 300, growth chamber; 310, opening; 320, growth cavity; X, first direction; Y, second direction; Z, third direction.

[0040] Implementation Methods of the Application

[0041] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0042] In the description of this application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to has a specific orientation, is constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0043] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. Throughout this application, unless otherwise specified, "plurality" means two or more.

[0044] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections, direct connections, indirect connections through an intermediate medium, or internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0045] For the convenience of description, as shown in Figures 1 to 12, the air intake device of the present application has an intersecting first direction X, second direction Y and third direction Z, wherein the outlet direction of the air outlet 211 is the first direction X. The first direction X, the second direction Y and the third direction Z are introduced to facilitate the accurate description of the relative position relationship and structure of the various components of the air intake device. It can be understood that the first direction X, the second direction Y and the third direction Z are relative directions rather than absolute directions. In actual applications, depending on the placement of the air intake device, the first direction X, the second direction Y and the third direction Z can point to any direction in space, as long as the first direction X, the second direction Y and the third direction Z intersect. Preferably, the first direction X, the second direction Y and the third direction Z are orthogonal to each other.

[0046] A wafer is the silicon wafer used in the manufacture of silicon semiconductor integrated circuits. Due to its round shape, it is called a wafer. Various circuit components can be fabricated onto the wafer, resulting in IC products with specific electrical functions. Crystal quality is a key parameter in the semiconductor wafer growth process and a major factor restricting semiconductor development. Uneven growth, resulting in uneven thickness, is a major issue with current crystal growth technology. Therefore, improving the uniformity and stability of crystal growth is crucial.

[0047] As shown in Figures 1 to 12, an embodiment of the present application provides an air intake device, which includes a first pipeline 100, a second pipeline 110, a third pipeline 120, and a flange 200. The outlet ends of the first pipeline 100 and the third pipeline 120 are connected to the flange 200. The first pipeline 100 is connected to the outlet end of the second pipeline 110. Before entering the flange 200, the gas in the first pipeline 100 is first mixed with the gas in the second pipeline 110. After mixing, the gas enters the flange 200 along the first pipeline 100. At the same time, in this embodiment of the present application, the flange 200 encloses a gas outlet 211, and air pockets 212 are provided inside the flange 200, correspondingly communicating with the first pipeline 100 and the third pipeline 120. A plurality of air pockets 212 are provided, and are sequentially spaced along the length direction (i.e., the second direction Y) of the gas outlet 211. In the embodiment of the present application, at least the central air pocket 212 is connected to the gas outlet of the first pipe 100, and the remaining air pockets 212 can be connected to the third gas outlet 121 or the first gas outlet 102. This allows more reactant gas with a faster flow rate and better mixing to flow through the central portion where the reaction is intense, resulting in more uniform wafer growth, reduced film thickness, and reduced resistance instability between wafers, thereby improving wafer output stability and ensuring wafer quality.

[0048] 1 to 3 , in some embodiments, the gas inlet device is used in a wafer growth device. The main reaction gas and the auxiliary reaction gas are mixed in the growth chamber 300 of the wafer growth device after passing through the flange 200 from different gas paths. The present application mixes the main reaction gas and the auxiliary reaction gas before entering the flange 200 to reduce the mutual interference between the gas flows and the occurrence of unstable wafer output. In an embodiment of the present application, the gas path is divided into a first pipeline 100, a second pipeline 110, and a third pipeline 120, and the main reaction gas is introduced into both the first pipeline 100 and the third pipeline 120. The difference is that the first pipeline 100 is connected to the second pipeline 110 before being connected to the flange 200, and an auxiliary reaction gas is connected to the second pipeline 110, so that the main reaction gas in the first pipeline 100 is mixed with the auxiliary reaction gas in the second pipeline 110 before being connected to the flange 200, so that the gas mixing step is placed before the gas enters the flange 200, thereby avoiding the mixing of gases at the gas outlet 211 of the flange 200, which can effectively reduce the occurrence of gas interference in the growth chamber 320 of the wafer growth equipment and improve the quality of the wafer output.

[0049] In some embodiments, the first pipeline 100 includes a first gas inlet end 101 and a first gas outlet end 102. The first gas inlet end 101 is connected to the main reaction gas, and the first gas outlet end 102 is connected to the flange 200. The second pipeline 110 includes a second gas inlet end and a second gas outlet end 111. The second gas inlet end of the second pipeline 110 is connected to the auxiliary reaction gas, and the second gas outlet end 111 is connected to the first pipeline 100. The second gas outlet end 111 is located between the first gas inlet end 101 and the first gas outlet end 102 to achieve mixing of the main reaction gas and the auxiliary reaction gas before entering the flange 200. The third pipeline 120 includes a third gas inlet end and a third gas outlet end 121. The third gas inlet end of the third pipeline 120 is connected to the main reaction gas, and the third gas outlet end 121 is connected to the flange 200.

[0050] When the wafer grows in the growth chamber 300, the growth reaction in the middle is more intense than the growth reaction at the edge, and more reaction gas is required per unit time. Therefore, as shown in Figures 1 to 3, the present application arranges the first pipeline 100 connected to the second pipeline 110 in the middle, ensuring that at least the air cavity 212 located in the middle of the flange 200 is connected to the first pipeline 100, so that the main and auxiliary reaction gases after mixing evenly are directly introduced into the growth chamber 300, avoiding the phenomenon of air flow disturbance caused by the mixing of the main and auxiliary gases in the growth chamber 300, and at the same time increasing the flow rate of the reaction gas per unit time in the middle of the growth chamber 320.

[0051] As shown in Figures 1 to 10, the flange 200 encloses a gas outlet 211. For the convenience of description, in this application, the gas outlet direction of the gas outlet 211 is a first direction X, which is toward the growth area of ​​the semiconductor, which is a direction perpendicular to the plate surface of the flange 200 in this application; at the same time, a plurality of gas cavities 212 connected to the gas outlet 211 are provided on the flange 200, and each gas cavity 212 is correspondingly connected to the first pipeline 100 or the third pipeline 120 to receive the reaction gas; for the convenience of describing the arrangement orientation of the plurality of gas cavities 212, in this application, the gas outlet 211 also has a second direction Y intersecting with the first direction X. Specifically, the first direction X The second direction Y can be optionally arranged orthogonally, and multiple air cavities 212 are arranged at intervals along the second direction Y. In the present application, multiple air cavities 212 are arranged at intervals along the width direction of the flange 200; in order to increase the flow rate of the reaction gas in the middle of the growth chamber 320, at least the air cavity 212 in the middle is connected to the first pipeline 100, and the remaining air cavities 212 can be connected to the third gas outlet end 121 of the third pipeline 120 or connected to the first gas outlet end 102 of the first pipeline 100, so that the reaction gas with a larger flow rate per unit time after mixing flows into the middle of the growth chamber 320.

[0052] In a specific implementation, referring to Figures 1 to 3 and Figure 10 , to further describe the connection relationship between the first pipeline 100, the third pipeline 120, and each air cavity 212, the air cavity 212 is categorized in this application; the plurality of air cavities 212 include a first air cavity 213 and a second air cavity 214. To ensure that at least the central air cavity 212 is connected to the first pipeline 100, the first air cavity 213 and the second air cavity 214 are alternately arranged along the second direction Y. Furthermore, the central air cavity 212 among the plurality of air cavities 212 is the first air cavity 213, which is connected to the first outlet end 102 of the first pipeline 100, and the second air cavity 214 is connected to the outlet end of the third pipeline 120.

[0053] In an embodiment of the present application, among the multiple air pockets 212 arranged at intervals along the second direction Y, at least the air pockets 212 located on both sides are second air pockets 214; referring to Figures 1 to 3, and Figure 10, the present application provides a specific example, in which 7 air pockets 212 are provided, and the first air pocket 213 and the second air pocket 214 are arranged at intervals among the 7 air pockets 212, the air pockets 212 located at the two ends are second air pockets 214, and the air pocket 212 located in the middle is the first air pocket 213.

[0054] In the embodiments of the present application, referring to Figures 2 to 9, in order to facilitate the connection between the air cavity 212 and the air outlet 211, the present application further provides a plurality of air outlet channels 230 in the flange 200, and each air outlet channel 230 is connected to a corresponding air cavity 212, and connects the corresponding air cavity 212 with the air outlet 211.

[0055] The air outlet channel 230 is arranged in the flange 200. The flange 200 includes a substrate 210 and a cover plate 220. The cover plate 220 covers the connecting substrate 210. The air cavity 212 is formed on the side of the substrate 210 facing the cover plate 220. The cover plate 220 covers the air cavity 212; the cover plate 220 covers the connecting substrate 210, and the air outlet channel 230 is arranged between the cover plate 220 and the substrate 210.

[0056] A through groove can be opened on the substrate 210 to connect the air cavity 212 and the air outlet 211, and then the groove is sealed with the cover plate 220 to construct an air outlet channel 230 connecting the air outlet 211 and the air cavity 212. A first through groove 215 is provided on the surface of the substrate 210 facing the cover plate 220. The first through groove 215 corresponds to the air cavity 212. The two ends of the first through groove 215 connect the air cavity 212 and the air outlet 211. The groove of the first through groove 215 faces the cover plate 220. Along the first direction X, the cover plate 220 covers the groove of the first through groove 215. The three inner walls of the first through groove 215 and the plate surface of the cover plate 220 form the air outlet channel 230.

[0057] In some embodiments, as shown in Figure 11, a through groove can be opened on the cover plate 220 to connect the air cavity 212 and the air outlet 211, and then the groove is sealed using the substrate 210 to construct an air outlet channel 230 connecting the air outlet 211 and the air cavity 212. A second through groove 221 is provided on the surface of the cover plate 220 facing the substrate 210. The second through groove 221 corresponds to the air cavity 212, and the two ends of the second through groove 221 connect the air cavity 212 and the air outlet 211. The groove of the second through groove 221 faces the substrate 210; along the first direction X, the substrate 210 covers the groove of the second through groove 221, and the three inner walls of the second through groove 221 and the plate surface of the substrate 210 form the air outlet channel 230.

[0058] In some embodiments, as shown in FIG12 , a through-slot can be formed on both the cover plate 220 and the base plate 210. Both through-slots connect the air cavity 212 and the air outlet 211. The notches of the two through-slots are arranged opposite each other and, when assembled, form an outlet channel 230 connecting the air outlet 211 and the air cavity 212. A third through-slot 222 is formed on the surface of the cover plate 220 facing the base plate 210, and a fourth through-slot 216 is formed on the surface of the base plate 210 facing the cover plate 220. The third through-slot 222 and the fourth through-slot 216 connect to the same air cavity 212 and both connect to the air outlet 211. The third through-slot 222 and the fourth through-slot 216 are arranged opposite each other along the first direction X, with their notches facing each other. The three inner walls of the third through-slot 222 and the three inner walls of the fourth through-slot 216 combine to form an outlet channel 230 connecting the air cavity 212 and the air outlet 211.

[0059] In the present application, a through groove is formed on the substrate 210 to connect the air cavity 212 and the air outlet 211 , and then the groove is sealed with a cover 220 to construct an air outlet channel 230 connecting the air outlet 211 and the air cavity 212 .

[0060] Since the smaller the gap in the outlet channel 230 of the flange 200, the slower the gas flow rate, this is also the source of the airflow interference problem. In this application, the size of the outlet channel 230 is optimized. Referring to Figures 5, 7, and 9, along the first direction X, the outlet channel has a first sidewall 231 and a second sidewall 232. The first sidewall 231 and the second sidewall 232 have a first dimension a between them. The first dimension a satisfies the following conditions: 0.6mm≤a≤0.9mm. In specific implementations, the first dimension a can be any value among 0.6mm, 0.7mm, 0.8mm, 0.9mm, or a range between any two values. For example, 0.6mm≤a≤0.7mm, 0.6mm≤a≤0.8mm, 0.7mm≤a≤0.8mm, 0.7mm≤a≤0.9mm, 0.8mm≤a≤0.9mm, etc. In a specific implementation, the first side wall 231 and the second side wall 232 are arranged in parallel, and the first dimension a is the vertical distance between the first side wall 231 and the second side wall 232 .

[0061] Along the second direction Y, the longer the length of the air pocket 212, the larger the airflow area, which is also the source of the airflow interference problem. In this application, the length of the air pocket 212 is optimized to reduce the airflow area and reduce the problem of mutual interference of airflow between areas. However, if the length of the air pocket 212 is small, it will affect the air flow rate. Referring to Figure 10, along the second direction Y, that is, along the length direction of the air pocket 212, the air pocket 212 has a second size b, and the second size b satisfies: 56mm≤b≤60mm. In order to further solve the problem of mutual interference of airflow between different air pocket areas after air outlet, this application further proposes a preferred range of the second size b: 57.5mm≤b≤59mm. This range further reduces the airflow area while meeting the air flow rate, and can effectively reduce the problem of mutual interference of airflow between areas.

[0062] In some embodiments, the second size b may also be 56 mm, 57 mm, 57.5 mm, 57.96 mm, 58 mm, 58.96 mm, 59 mm, 60 mm, or any value in a range consisting of any two of these values, such as 56 mm ≤ b ≤ 57 mm, 56 mm ≤ b ≤ 57.96 mm, 56 mm ≤ b ≤ 58 mm, 56 mm ≤ b ≤ 58.96 mm, 56 mm ≤ b ≤ 59 mm, 57 mm ≤ b ≤ 57.96 mm, 57 mm ≤ b ≤ 58 mm, 57 mm m≤b≤58.96mm, 57mm≤b≤59mm, 57mm≤b≤60mm, 57.96mm≤b≤58mm, 57.96mm≤b≤58.96mm, 57.96mm≤b≤59mm, 57.96mm≤b≤60mm, 58mm≤b≤58.96mm, 58mm≤b≤59mm, 58mm≤b≤60mm, 58.96mm≤b≤59mm, 58.96mm≤b≤60mm or 59mm≤b≤60mm, etc.

[0063] An embodiment of the present application also provides a wafer growth device, which is based on the same concept as the above-mentioned air intake device. Referring to Figure 13, Example 2 of the present application provides a wafer growth device, including a growth chamber 300 and an air intake device of any one of the above-mentioned air intake devices, wherein the growth chamber 300 has a growth cavity 320 with an opening 310 at one end, and the flange 200 is connected to the growth chamber 300 and seals the opening 310, wherein the air outlet 211 of the air intake device faces the opening 310 of the growth cavity 320.

[0064] In order to further demonstrate the superiority of the present application, the present application selects a wafer growth device with a first dimension a of 0.81 mm and a wafer growth device with a first dimension a of 0.56 mm. The above two wafer growth devices are used under the same growth environment, and the wafer film thickness detection method is adopted. Five wafers are selected respectively. For each wafer: from a top view, the notch (groove mark) is located at the 6 o'clock direction, the intersection of the wafer at the 9 o'clock direction and the edge of the wafer is the first point, and the intersection of the wafer at the 3 o'clock direction and the edge of the wafer is the second point. On the line segment between the first point and the second point, the film thickness of 17 points is detected in sequence and recorded. The results are shown in Tables 1 and 2:

[0065] Table 1: a is 0.81 mm, unit: mm

[0066] Table 2: a is 0.56 mm, unit: mm

[0067] Wherein, MAX is the maximum film thickness, MIN is the minimum film thickness, BIAS is the maximum deviation, and BIAS = (MAX-MIN) / MIN.

[0068] It can be seen that after the first dimension a of the outlet channel 230 is increased, the maximum deviation of the film thickness is significantly reduced. It can be seen that after the outlet channel 230 is increased, the flow state of the reaction gas flow can be significantly improved, and a film output result with smaller film thickness deviation can be obtained.

[0069] The above is a detailed introduction to an air intake device and wafer growth equipment provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. An air intake device, comprising: A first pipeline (100) having a first air inlet end (101) and a first air outlet end (102); A second pipeline (110) having a second gas outlet end (111), wherein the second gas outlet end (111) is located between the first gas inlet end (101) and the first gas outlet end (102), and the second pipeline (110) is connected to the first pipeline (100) via the second gas outlet end (111); A third pipeline (120) having a third gas outlet end (121); A flange (200), wherein the flange (200) is enclosed to form an air outlet (211), the air outlet direction of the air outlet (211) is a first direction (X), and the air outlet (211) also has a second direction (Y) intersecting with the first direction (X); the flange (200) has a plurality of air cavities (212) in communication with the air outlet (211), the plurality of air cavities (212) are arranged at intervals along the second direction (Y), and the air cavity (212) located in the middle is in communication with the first air outlet end (102), and the remaining air cavities (212) are in communication with the third air outlet end (121) or the first air outlet end (102).

2. The air intake device according to claim 1, wherein: The plurality of air pockets (212) include a plurality of first air pockets (213) and a plurality of second air pockets (214), wherein the first air pockets (213) and the second air pockets (214) are alternately arranged along the second direction (Y); and among the plurality of air pockets (212), at least the air pocket (212) located in the middle is the first air pocket (213); The first air cavity (213) is in communication with the first air outlet end (102), and the second air cavity (214) is in communication with the third air outlet end (121).

3. The air intake device according to claim 2, wherein: Among the plurality of air pockets (212) arranged at intervals along the second direction (Y), at least the air pockets (212) located at two sides are the second air pockets (214).

4. The air intake device according to claim 1, wherein: The flange (200) further comprises a plurality of air outlet channels (230), wherein the air outlet channels (230) correspond to the air cavities (212), and the air outlet channels (230) are connected between the air cavities (212) and the air outlets (211).

5. The air intake device according to claim 4, wherein: The flange (200) comprises a base plate (210) and a cover plate (220), wherein the cover plate (220) is connected to the base plate (210), the air pocket (212) is formed on a side of the base plate (210) facing the cover plate (220), and the cover plate (220) is connected to the base plate (210). A plate (220) covers the air pocket (212).

6. The air intake device according to claim 5, wherein: A first through groove (215) is provided on a side of the substrate (210) facing the cover plate (220); the first through groove (215) corresponds to the air cavity (212); the first through groove (215) is connected between the air cavity (212) and the air outlet (211); along the first direction (X), the cover plate (220) covers the first through groove (215) to form the air outlet channel (230).

7. The air intake device according to claim 5, wherein: A second through groove (221) is provided on one side of the cover plate (220) facing the substrate (210); the second through groove (221) corresponds to the air cavity (212); the second through groove (221) is connected between the air cavity (212) and the air outlet (211); along the first direction (X), the substrate (210) covers the opening (310) of the second through groove (221), thereby forming the air outlet channel (230).

8. The air intake device according to claim 5, wherein: The cover plate (220) is provided with a third through groove (222) on one side facing the base plate (210), and the base plate (210) is provided with a fourth through groove (216) on one side facing the cover plate (220); the third through groove (222) and the fourth through groove (216) are both connected between the air cavity (212) and the air outlet (211); the third through groove (222) and the fourth through groove (216) are arranged opposite to each other along the first direction (X) to form the air outlet channel (230).

9. The air intake device according to claim 4, wherein: Along the first direction (X), the air outlet channel (230) has a first side wall (231) and a second side wall (232) opposite to each other, and a first dimension a is provided between the first side wall (231) and the second side wall (232), satisfying: 0.6 mm ≤ a ≤ 0.9 mm.

10. The air intake device according to claim 9, wherein: The first dimension a satisfies: 0.8 mm ≤ a ≤ 0.9 mm.

11. The air intake device according to claim 1, wherein: Along the second direction (Y), the air cavity (212) has a second size b, satisfying: 56 mm ≤ b ≤ 60 mm.

12. The air intake device according to claim 11, wherein: The second dimension b satisfies: 57.5 mm ≤ b ≤ 59 mm.

13. A wafer growth device comprising: Comprising the air intake device as claimed in any one of claims 1-12.

14. The wafer growth apparatus according to claim 13, wherein: It also comprises a growth chamber (300), wherein the growth chamber (300) has a growth cavity (320) with an opening (310) at one end; the flange (200) is connected to the growth chamber (300) and covers the opening (310).

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