Opto-electronic device with photon-absorbing layer patterned over cathode

Abstract

An opto-electronic device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof, comprises at least one emissive region and a light-absorbing layer surrounding the at least one emissive region. The at least one emissive region comprises a first electrode, a second electrode, and at least one semiconducting layer disposed between the first electrode and the second electrode. The first electrode is disposed between the substrate and the at least one semiconducting layer. The light-absorbing layer reduces reflection of light incident thereon, and comprises at least one dielectric layer and at least one particle deposited with the at least one dielectric layer.

Description

OPTO-ELECTRONIC DEVICE WITH PHOTON-ABSORBING LAYERPATTERNED OVER CATHODERELATED APPLICATIONS

[0001] The present application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 535,520, filed August 30, 2023, the contents of which are incorporated herein by reference in their entirety.TECHNICAL FIELD

[0002] The present disclosure relates to layered semiconductor devices, and in some nonlimiting examples, to a layered opto-electronic device having a plurality of sub-pixel emissive regions, each sub-pixel comprising first and second electrodes separated by a semiconductor layer, in which at least one of the electrodes, at least one particle structure, and a conductive coating electrically coupled thereto, may be patterned by depositing a patterning coating that may at least one of act as, and be, a nucleation inhibiting coating.BACKGROUND

[0003] In an opto-electronic device such as an organic light emitting diode (OLED), at least one semiconducting layer, comprising an emissive layer, may be disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode may be electrically coupled with a power source and respectively generate holes and electrons that migrate toward each other through the at least one semiconducting layer. When a pair of holes and electrons combine, light, in the form of a photon, may be emitted by the emissive layer.

[0004] OLED display panels, such as an active-matrix OLED (AMOLED) panel, may comprise a plurality of pixels, each pixel further comprising a plurality of (including without limitation, one of three, and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by one of three, and four, different colors, including without limitation, R(ed), G(reen), and B(lue). Each (sub-) pixel may have an associated emissive region, comprising a stack of an associated pair of electrodes and at least one semiconducting layer between them. In some non-limiting examples, each sub-pixel of a pixel may emit light, including without limitation, photons, that have anassociated wavelength spectrum characterized by a given color, including without limitation, one of, R(ed), G(reen), B(lue), and W(hite). In some non-limiting examples, the (sub-) pixels may be selectively driven by a driving circuit comprising at least one thin- film transistor (TFT) structure electrically coupled with conductive metal lines, in some non-limiting examples, within a substrate upon which the electrodes and the at least one semiconducting layer are deposited. Various coatings (layers) of such panels may, in some non-limiting examples, be formed by vacuum-based deposition processes.

[0005] In AMOLED panels, light may be emitted by a (sub-)pixel when a voltage is applied across an anode and a cathode thereof. By controlling the voltage applied across the anode and the cathode, it may be possible to control the emission of light from each (sub-) pixel of such panel. In cases where a common cathode is provided across multiple (sub-) pixels, the voltage across the anode and the cathode in each (sub-) pixel may be controlled by modulating the voltage of the anode. In some non-limiting examples, the adjacent anodes may be spaced apart in a lateral aspect, and at least one non-emissive region may be provided therebetween.

[0006] In some applications, there may be an aim to provide an light-absorbing layer in certain regions of the panel. In some applications, such light-absorbing layer may be referred to as a black matrix (BM) layer, including without limitation, if the regions lie around, but not over each (sub-) pixel of the panel. The light-absorbing layer absorbs external light, including without limitation, light, incident thereon and reduces reflection by the panel of such light. As such, the existence of an light-absorbing layer may reduce the intrusion of external radiation incident thereon from entering the panel and thus reduce internally reflected radiation therefrom that otherwise might be compensated for by implementation of a polarizer over the panel. Such an light-absorbing layer may be shaped to avoid covering emissive regions of the panel so that emitted light is not absorbed thereby and precluded from exiting the panel.

[0007] In United States Patent Application Publication No. 2023 / 0172005 filedl 8 November 2022 by PARK, Heemin, et al., published 1 June 2023, and entitled “Organic Light-Emitting Display Device”, there is disclosed an organic light-emitting display device that includes: a substrate; an insulating layer disposed on the substrate; a first electrodedisposed on the insulating layer; a pixel defining layer disposed on the first electrode and defining an emission area by an opening that exposes at least part of the first electrode; a metal layer disposed on the pixel defining layer and in a non-emission area around the emission area; an organic light-emitting layer disposed on the first electrode in the opening; and a second electrode disposed on the organic light-emitting layer in the emission area and the non-emission area, where the metal layer is disposed between the pixel defining layer and the second electrode in the non-emission area.

[0008] In PCT International Patent Application Publication No. 2022 / 054018 filed 13 September 2021 by WANG, Zhibin, etal., published 17 March 2022, and assigned to the assignee of the present disclosure, entitled “Opto-Electronic Device Including Patterned light- Ab sorbing Layer”, there is disclosed a semiconductor device that facilitates absorption of EM radiation thereon and a method [of] manufacturing same. The device extends in at least one lateral aspect. An light-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and / or comprise the deposited material co-deposited with a co-deposited dielectric material. The light-absorbing layer may be disposed on a supporting dielectric layer and / or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and / or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and / or seed material on the second layer surface.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Examples of the present disclosure will now be described by reference to the following figures, in which identical reference numerals in different figures indicate at least one of identical, and in some non-limiting examples, at least one of analogous, and corresponding elements, and in which:

[0010] FIG. 1 is a simplified block diagram, from a longitudinal aspect, of an example device having a plurality of layers in a lateral aspect, formed by selective deposition of a patterning coating in a first portion of the lateral aspect, followed by deposition of a closedcoating of deposited material in a second portion thereof, according to an example in the present disclosure;

[0011] FIG. 2 is a simplified diagram, from a longitudinal aspect, of an example version of the device of FIG. 1, in which the closed coating of deposited material in the second portion forms a second electrode of an opto-electronic device, according to an example in the present disclosure;

[0012] FIG. 3 is a simplified diagram, from a longitudinal aspect, of an example version of the device of FIG. 2, having an light-absorbing layer deposited on at least a part of at least one non-emissive region surrounding an emissive region thereof, according to an example in the present disclosure;

[0013] FIG. 4A is a schematic diagram illustrating, in plan, an example of a lateral extent of the light-absorbing layer of FIG. 3, that substantially surrounds individual emissive regions each corresponding to a (sub-) pixel of the device, according to an example in the present disclosure;

[0014] FIG. 4B is a schematic diagram illustrating, in plan, an example of a lateral extent of the light-absorbing layer of FIG. 3, that extends between adjacent clusters each comprising a plurality of emissive regions, each corresponding to a (sub-) pixel of the device, according to an example in the present disclosure;

[0015] FIG. 5A is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 4A, comprising a patterning coating deposited on the supporting dielectric layer in at least the emissive regions to inhibit formation of at least one particle structure thereon, before covering the device with a covering dielectric layer and a TFE layer, according to an example in the present disclosure;

[0016] FIG. 5B is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 4A, comprising a patterning coating deposited on the supporting dielectric layer in at least the emissive regions to inhibit formation of at least one particle structure thereon, before covering the device with a TFE layer, according to an example in the present disclosure;

[0017] FIG. 5C is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5A, wherein a CPL material is co-deposited with a deposited material over the device to form at least one particle structure in a multiple layer configuration, in at least part of at least one non-emissive region, interspersed with a CPL across the device, the CPL replacing the supporting dielectric layer of FIG. 5A, before covering the device with a covering dielectric layer and a TFE layer, according to an example in the present disclosure;

[0018] FIG. 5D is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5B, wherein a CPL material is co-deposited with a deposited material over the device to form at least one particle structure in a multiple layer configuration, in at least part of at least one non-emissive region, interspersed with a CPL across the device, the CPL replacing the supporting dielectric layer of FIG. 5B, before covering the device with a TFE layer, according to an example in the present disclosure;

[0019] FIG. 5E is a schematic diagram illustrating an example cross-section view of an example version of the device of FIG. 5C, comprising a patterning coating deposited on the second electrode in at least the emissive regions to inhibit formation of at least one particle structure thereon and to facilitate formation of at least one auxiliary electrode therebetween, wherein a CPL material is co-deposited with a deposited material over the device to form at least one particle structure in a multiple layer configuration over at least the at least one auxiliary electrode, interspersed with a CPL across the device, before covering the device with a covering dielectric layer and a TFE layer, according to an example in the present disclosure;

[0020] FIG. 5F is a schematic diagram illustrating an example cross-section view of an example version of the device of FIG. 5D, comprising a patterning coating deposited on the second electrode in at least the emissive regions to inhibit formation of at least one particle structure thereon and to facilitate formation of at least one auxiliary electrode therebetween, wherein a CPL material is co-deposited with a deposited material over the device to form at least one particle structure in a multiple layer configuration over at least the at least one auxiliary electrode, interspersed with a CPL across the device, before covering the device with a TFE layer, according to an example in the present disclosure;

[0021] FIG. 5G is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5E, comprising a patterning coating deposited on the supporting dielectric layer in at least the emissive regions to inhibit formation of at least one particle structure thereon and to facilitate formation of at least one auxiliary electrode therebetween, wherein a CPL material is co-deposited with a deposited material over the device to form at least one particle structure in a multiple layer configuration over at least the at least one auxiliary electrode, interspersed with a CPL across the device, before covering the device with a covering dielectric layer and a TFE layer, according to an example in the present disclosure;

[0022] FIG. 5H is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5F, comprising a patterning coating deposited on the supporting dielectric layer in at least the emissive regions to inhibit formation of at least one particle structure thereon and to facilitate formation of at least one auxiliary electrode therebetween, wherein a CPL material is co-deposited with a deposited material over the device to form at least one particle structure in a multiple layer configuration over at least the at least one auxiliary electrode, interspersed with a CPL across the device, before covering the device with a TFE layer, according to an example in the present disclosure;

[0023] FIG. 51 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5F, wherein the supporting dielectric layer is covered with a covering dielectric layer before depositing the patterning coating thereon in at least the emissive regions to inhibit formation of at least one particle structure thereon and to facilitate formation of at least one auxiliary electrode therebetween, wherein a CPL material is co-deposited with a deposited material over the device to form at least one particle structure in a multiple layer configuration over at least the at least one auxiliary electrode, interspersed with a CPL across the device, before covering the device with a TFE layer, according to an example in the present disclosure;

[0024] FIG. 5J is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5A, comprising a first patterning coating deposited on the second electrode in at least the emissive regions to facilitate formation of at least one auxiliary electrode therebetween, a supporting dielectric layer, and a second patterningcoating deposited thereon in at least the emissive regions to inhibit formation of at least one particle structure thereon, before covering the device with a covering dielectric layer and a TFE layer, according to an example in the present disclosure;

[0025] FIG. 5K is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5B, comprising a first patterning coating deposited on the second electrode in at least the emissive regions to facilitate formation of at least one auxiliary electrode therebetween, a supporting dielectric layer, and a second patterning coating deposited thereon in at least the emissive regions to inhibit formation of at least one particle structure thereon, before covering the device with a TFE layer, according to an example in the present disclosure;

[0026] FIG. 5L is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5B, comprising a first patterning coating deposited on the second electrode in at least the emissive regions to facilitate formation of at least one first auxiliary electrode therebetween, a supporting dielectric layer, and a second patterning coating deposited thereon in at least the emissive regions to inhibit formation of at least one particle structure thereon and to facilitate formation of at least one second auxiliary electrode therebetween, before covering the device with a TFE layer, according to an example in the present disclosure;

[0027] FIG. 6A is a schematic diagram illustrating an example cross-sectional view of a profile of a patterning coating and its interface with the light-absorbing layer of FIG. 3, showing a central region of substantially uniform cross-section, an intermediate region of varying thickness, and a peripheral region of substantially small thickness on which the formation of at least one particle structure may be observed according to an example in the present disclosure;

[0028] FIG. 6B is a schematic diagram illustrating the device of FIG. 6A in a complementary plan view;

[0029] FIG. 7A is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 5A, in which the emissive layer is replaced by a plurality of individual printed emissive layers for each of the sub-pixels thereof, and the patterning coating thereof is replaced by a plurality of individual printed patterning coatingsfor each of the sub-pixels thereof, that are confined therewithin by an underlying patterning coating bank structure according to an example in the present disclosure;

[0030] FIG. 7B is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 7A, in which the patterning coating bank structure is provided with a seed layer according to an example in the present disclosure;

[0031] FIGs. 8A-8B show SEM images at varying degrees of magnification, of example samples according to an example in the present disclosure;

[0032] FIG. 8C is an example graph of absorption, expressed as a percentage, as a function of wavelength, for the example samples of FIGs. 8A-8B;

[0033] FIG. 8D is an example graph of absorption, expressed as a percentage, as a function of wavelength, for a variety of example samples according to an example in the present disclosure;

[0034] FIG. 8E is a photograph of one of the example samples referenced in FIG. 8D;

[0035] FIG. 8F shows SEM images at varying degrees of magnification, of an example samples similar to one of the example samples shown in FIG. 8D;

[0036] FIG. 8G is an example graph of absorption, expressed as a percentage, as a function of wavelength, for a variety of example samples according to an example in the present disclosure;

[0037] FIG. 9 is a schematic diagram illustrating an example cross-sectional view of an example display panel having a plurality of layers, comprising at least one aperture therewithin, through which at least one electromagnetic signal may be exchanged according to an example in the present disclosure;

[0038] FIG. 10 is a schematic diagram showing an example process for depositing a patterning coating in a pattern on an exposed layer surface 11 of an underlying layer in an example version of the device of FIG. 1, according to an example in the present disclosure;

[0039] FIG. 11 is a schematic diagram showing an example process for depositing a deposited material in the second portion on an exposed layer surface that comprises thedeposited pattern of the patterning coating of FIG. 10, where the patterning coating is a nucleation-inhibiting coating (NIC);

[0040] FIG. 12A is a schematic diagram illustrating an example version of the device of FIG. 1 in a cross-sectional view;

[0041] FIG. 12B is a schematic diagram illustrating the device of FIG. 12A in a complementary plan view;

[0042] FIGs. 13A-13B are schematic diagrams that show various potential behaviours of a patterning coating at a deposition interface with a deposited layer in an example version of the device of FIG. 1 according to various examples in the present disclosure;

[0043] FIGs. 14A-14H are simplified block diagrams from a cross-sectional aspect, of example versions of the device of FIG. 1, showing various examples of possible interactions between the particle structure patterning coating and the particle structures according to examples in the present disclosure;

[0044] FIG. 15 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 2 with additional example deposition steps according to an example in the present disclosure;

[0045] FIG. 16 is a schematic diagram that may show example stages of an example process for manufacturing an example version of an OLED device having sub-pixel regions having a second electrode of different thickness according to an example in the present disclosure;

[0046] FIG. 17 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device in which a second electrode is coupled with an auxiliary electrode according to an example in the present disclosure;

[0047] FIG. 18 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device having a partition and a sheltered region, such as a recess, in a non-emissive region thereof according to an example in the present disclosure;

[0048] FIGs. 19A-19B are schematic diagrams that show example cross-sectional views of an example OLED device having a partition and a sheltered region, such as an aperture, in a non-emissive region, according to various examples in the present disclosure;

[0049] FIG. 20 is an example energy profile illustrating energy states of an adatom absorbed onto a surface according to an example in the present disclosure;

[0050] FIG. 21 is a schematic diagram illustrating the formation of a film nucleus according to an example in the present disclosure; and

[0051] FIG. 22 is a block diagram of an example computer device within a computing and communications environment that may be used for implementing devices and methods in accordance with representative examples of the present disclosure.

[0052] In the present disclosure, a reference numeral having at least one of at least one numeric value (including without limitation, in at least one of superscript, and subscript), and at least one alphabetic character (including without limitation, in lower-case) appended thereto, may be considered to refer to at least one of a particular instance, and subset thereof, of the feature (element) described by the reference numeral. Reference to the reference numeral without reference to the at least one of the appended value(s), and the character(s), may, as the context dictates, refer generally to the feature(s) described by at least one of the reference numeral, and the set of all instances described thereby. Similarly, a reference numeral may have the letter “x’ in the place of a numeric digit. Reference to such reference numeral may, as the context dictates, refer generally to feature(s) described by the reference numeral, where the character “x” is replaced by at least one of a numeric digit, and the set of all instances described thereby.

[0053] In the present disclosure, for purposes of explanation and not limitation, specific details are set forth to provide a thorough understanding of the present disclosure, including without limitation, particular architectures, interfaces and techniques. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted to not obscure the description of the present disclosure with unnecessary detail.

[0054] Further, it will be appreciated that block diagrams reproduced herein can represent conceptual views of illustrative components embodying the principles of the technology.

[0055] Accordingly, the system and method components have been represented where appropriate by conventional symbols in the drawings, showing only those specific detailsthat are pertinent to understanding the examples of the present disclosure, to not obscure the disclosure with details that will be readily apparent to those of ordinary skill in the art having the benefit of the description herein.

[0056] Any drawings provided herein may not be drawn to scale and may not be considered to limit the present disclosure in any way.

[0057] Any feature shown in dashed outline, unless the context indicates otherwise, may in some examples be considered as optional.SUMMARY

[0058] The present disclosure discloses an opto-electronic device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof, comprises at least one emissive region and a light-absorbing layer surrounding the at least one emissive region. The at least one emissive region comprises a first electrode, a second electrode, and at least one semiconducting layer disposed between the first electrode and the second electrode. The first electrode is disposed between the substrate and the at least one semiconducting layer. The light-absorbing layer reduces reflection of light incident thereon, and comprises at least one dielectric layer and at least one particle deposited with the at least one dielectric layer.

[0059] According to a broad aspect, there is disclosed an opto-electronic device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof, comprising: at least one emissive region comprising: a first electrode; a second electrode; at least one semiconducting layer disposed between the first electrode and the second electrode, the first electrode being disposed between the substrate and the at least one semiconducting layer; a light-absorbing layer surrounding the at least one emissive region, the light-absorbing layer for reducing reflection of light incident thereon, and comprising: at least one dielectric layer; and at least one particle structure deposited with the at least one dielectric layer.

[0060] In some non-limiting examples, the second electrode may extend beyond the at least one emissive region.

[0061] In some non-limiting examples, the light-absorbing layer may be deposited on an exposed layer surface of the second electrode in at least the at least one emissive region and at least a part of at least one non-emissive region adjacent thereto.

[0062] In some non-limiting examples, the light-absorbing layer may surround each of the at least one emissive regions.

[0063] In some non-limiting examples, the light-absorbing layer may surround a cluster of a plurality of the at least one emissive regions.

[0064] In some non-limiting examples, the cluster of emissive regions may correspond to a pixel comprising a plurality of sub-pixels.

[0065] In some non-limiting examples, the light-absorbing layer may surround at least a part of a non-emissive region adjacent to the surrounded at least one emissive region.

[0066] In some non-limiting examples, the at least one dielectric layer may comprise a capping layer of the device.

[0067] In some non-limiting examples, the device may further comprise at least one patterning coating disposed on an exposed layer surface of an underlying layer of the device, in a first portion of the lateral aspect comprising at least the at least one emissive region, wherein an exposed layer surface of the at least one patterning coating has a reduced propensity for the deposited material to be deposited thereon relative to the exposed layer surface of the underlying layer, such that the at least one patterning coating is substantially devoid of the at least one particle structure thereon.

[0068] In some non-limiting examples, the underlying layer may be the at least one dielectric layer.

[0069] In some non-limiting examples, the at least one dielectric layer may support the at least one particle structure on an exposed layer surface thereof.

[0070] In some non-limiting examples, the exposed layer surface of the at least one dielectric layer may be substantially devoid of the at least one particle structure in at least the first portion.

[0071] In some non-limiting examples, the underlying layer may be the second electrode.

[0072] In some non-limiting examples, the at least one particle structure may be interspersed within the at least one dielectric layer.

[0073] In some non-limiting examples, the at least one particle structure interspersed within the at least one dielectric layer may be formed by exposing the exposed layer surface of the device to a vapor flux of the deposited material co-deposited with a dielectric material of which the at least one dielectric layer is comprised.

[0074] In some non-limiting examples, the at least one particle structure may form a plurality of layers within the at least one dielectric layer.

[0075] The device of claim 9, wherein the at least one patterning coating may be disposed on an exposed layer surface of a patterning coating bank structure having a local depression within an active region of the emissive region, and the at least one patterning coating is provided by an ink-jet printing operation.

[0076] In some non-limiting examples, the at least one particle structure may be comprised of a metallic deposited material.

[0077] In some non-limiting examples, the at least one particle structure may form a discontinuous layer.

[0078] In some non-limiting examples, the discontinuous layer may extend in a second portion of the lateral aspect adjacent to the first portion.

[0079] In some non-limiting examples, the at least one patterning coating may have a central non-transition part of substantially uniform thickness surrounded by a transition region in which a thickness thereof transitions from a maximum thickness to a reduced thickness.

[0080] In some non-limiting examples, the transition region may lie between the nontransition part and the second portion.

[0081] In some non-limiting examples, a size, in the lateral aspect, of the non-transition part may be no more than a size, in the lateral aspect, of the transition region.

[0082] In some non-limiting examples, the transition region may comprise a transition peripheral part adjacent to the second portion and a transition intermediate part between the transition peripheral part and the non-transition part.

[0083] In some non-limiting examples, a perimeter of the transition intermediate part may correspond to a critical thickness of the at least one patterning coating below which at least one particle structure may tend to form on the at least one patterning coating and above which the at least one patterning coating may be substantially devoid of the at least one particle structure.

[0084] In some non-limiting examples, a thickness of the at least one patterning coating throughout the transition intermediate part may be at least the critical thickness and where a thickness of the at least one patterning coating in the transition peripheral part may be no more than the critical thickness.

[0085] In some non-limiting examples, the at least one particle structure on the at least one patterning coating in the transition peripheral part may differ from the at least one particle structure of the light-absorbing layer in at least one of: particle size, particle deposited density, and area coverage.

[0086] In some non-limiting examples, at least one of a: characteristic size, length, width, diameter, height, and an average thereof, of the at least one particle structure of the lightabsorbing layer may be at least that of the at least one particle structure on the at least one patterning coating in the transition peripheral part.

[0087] In some non-limiting examples, a deposited density of the at least one particle structure of the light-absorbing layer may be at least that of the at least one particle structure on the at least one patterning coating in the transition peripheral part.

[0088] In some non-limiting examples, the at least one particle structure of the lightabsorbing layer may exhibit an area coverage that is at least that of the at least one particle structure on the at least one patterning coating in the transition peripheral part.

[0089] In some non-limiting examples, the at least one particle structure may form in the second portion.

[0090] In some non-limiting examples, the exposed layer surface of the device in the second portion may comprise an auxiliary electrode comprising a deposited material deposited before the vapor flux.

[0091] In some non-limiting examples, the auxiliary electrode may be formed by actions of: forming a first one of the at least one patterning coating in the first portion, and presenting an exposed layer surface of the device to a vapor flux of the deposited material, and the light-absorbing layer is thereafter formed by actions of: covering the exposed layer surface of the device with a first one of the at least one dielectric layer, depositing a second one of the at least one patterning coating in the first portion, and exposing an exposed layer surface of the device to a vapor flux of the deposited material co-deposited with the dielectric material to form the at least one particle structure interspersed within a second one of the at least one dielectric layer.

[0092] In some non-limiting examples, wherein the at least one particle structure may comprise a nanoparticle.

[0093] In some non-limiting examples, at least one of a: characteristic size, size distribution, shape, surface coverage, configuration, deposition density, dispersity, material property, and degree of aggregation of the at least one particle structure may affect an optical response selected from at least one of: a (sub-)range of an EM spectrum, refractive index, and extinction coefficient, of one of: localized surface plasmon (LSP) excitations, and coherent oscillations of free electrons, of at least one of: a nanostructure of the at least one particle structure, and a medium proximate thereto.

[0094] In some non-limiting examples, the light-absorbing layer may be covered by an overlying layer.

[0095] In some non-limiting examples, the overlying layer may comprise a thin film encapsulation (TFE) layer.

[0096] In some non-limiting examples, the TFE layer may comprise at least one of: an LiF layer, and an SiNx / SiOxNy layer.

[0097] In some non-limiting examples, the overlying layer may comprise a covering dielectric layer.

[0098] In some non-limiting examples, the covering dielectric layer may be disposed between the TFE layer and the light-absorbing layer.

[0099] In some non-limiting examples, the at least one semiconducting layer may comprise an emissive layer.

[0100] The device of claim 41, wherein the emissive layer is disposed on an exposed layer surface of an EML bank structure having a local depression within an active region of the emissive region, and the emissive layer is provided by an ink-jet printing operation.DESCRIPTIONLayered Device

[0101] The present disclosure relates generally to layered semiconductor devices 100, and more specifically, to opto-electronic devices 200. An opto-electronic device 200 may generally encompass any device 100 that converts electrical signals into light in the form of photons and vice versa. In some non-limiting examples, opto-electronic devices 200 may comprise organic light-emitting diodes (OLEDs).

[0102] Those having ordinary skill in the relevant art will appreciate that, while the present disclosure is directed to opto-electronic devices 200, the principles thereof may, in some non-limiting examples, be applicable to any panel having a plurality of layers, including without limitation, at least one layer of conductive deposited material 1131, including as a thin film, and in some non-limiting examples, through which electromagnetic (EM) signals may pass, including without limitation, one of partially, and entirely, at a nonzero angle relative to a plane of at least one of the layers.

[0103] Turning now to FIG. 1, there may be shown a cross-sectional view of an example layered semiconductor device 100. In some non-limiting examples, as shown in greater detail in FIG. 2, the device 100 may comprise a plurality of layers deposited upon a substrate 10.

[0104] A first lateral axis, identified as the X-axis, may be shown, together with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as being substantially transverse to both the X-axis and the Z-axis. At leastone of the lateral axes may define a lateral aspect of the device 100. The longitudinal axis may define a longitudinal aspect of the device 100.

[0105] The layers of the device 100 may extend, in the lateral aspect, substantially parallel to a plane defined by the lateral axes. Those having ordinary skill in the relevant art will appreciate that the substantially planar representation shown in FIG. 1 may be, in some non-limiting examples, an abstraction for purposes of illustration. In some non-limiting examples, there may be, across a lateral aspect of the device 100, localized substantially planar strata of different thicknesses and dimension, including, in some non-limiting examples, the substantially complete absence of at least one layer separated by non-planar transition areas (including lateral gaps and even discontinuities).

[0106] Thus, while for illustrative purposes, the device 100 may be shown in its longitudinal aspect as a substantially stratified structure of substantially parallel planar layers, such device 100 may illustrate locally, a diverse topography to define features, each of which may substantially exhibit the stratified profile discussed in the longitudinal aspect.

[0107] In some non-limiting examples, a lateral aspect of an exposed layer surface 11 of the device 100 may comprise a first portion 101 and a second portion 102. In some non-limiting examples, the second portion 102 may comprise that part of the exposed layer surface 11 of the device 100 that lies beyond the first portion 101.

[0108] As shown in FIG. 1, the layers of the device 100 may comprise a substrate 10, and a patterning coating 110 disposed on an exposed layer surface 11 of at least a portion of the lateral aspect thereof. The patterning coating 110 may be adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, including without limitation, such that an exposed layer surface 11 of the patterning coating 110 may have a substantially reduced propensity for the deposited material 1131 to be deposited thereon, when compared to the exposed layer surface 11 of an underlying layer 15 on which the patterning coating 110 has been deposited, including without limitation, such that the exposed layer surface 11 of the patterning coating 110 may have an initial sticking probability against the deposition of the deposited material 1131 that is no more than an initial sticking probability against the deposition of the deposited material 1131 of the exposed layer surface 11 of the underlying layer 15. In some non-limiting examples, theunderlying layer 15 may comprise at least one of: an orientation layer, a second electrode 240, a supporting dielectric layer 350, a covering dielectric layer 571, a thin film encapsulation (TFE) layer 572, a nucleation promoting coating (NPC) 1320, and an organic supporting layer.

[0109] In some non-limiting examples, as shown, the patterning coating 110 may be limited, in its lateral extent, to the first portion 101, and a deposited layer 130 comprising the deposited material 1131, may be disposed, as a closed coating 140, on an exposed layer surface 11 of the underlying layer 15 of the device 100, including without limitation, the substrate 10, in a second portion 102 of its lateral aspect. In some non-limiting examples, the second portion 102 may extend substantially across an emissive region 211 (FIG. 2) of an opto-electronic device 200 (FIG. 2), and as such, the patterning coating 110, by which the deposited layer 130 is formed thereon, may be designated as a non-particle structure patterning coating 11 On.

[0110] In some non-limiting examples, as shown, at least one particle structure 150, each comprising the deposited material 1131, may be disposed, as a discontinuous layer 160, on the exposed layer surface 11 of the patterning coating 110 in the first portion 101. As such, the patterning coating 110, by which the at least one particle structure 150 is formed thereon, may be designated as a patterning structure patterning coating 110p.

[0111] In some non-limiting examples, as shown, a patterning coating 110 may act as both a non-particle structure patterning coating 110n, for the formation of a deposited layer 130 in the second portion 102, and as a particle structure patterning coating 110p, for the formation of (a discontinuous layer 160 of) at least one particle structure 150 in the first portion 101.

[0112] In some non-limiting examples, although not shown, at least one of: the patterning coating 110, the deposited layer 130, and at least one particle structure 150, may be deposited on an underlying layer 15 other than the substrate 10 including without limitation, an intervening layer between: the substrate 10 and at least one of: the patterning coating 110, deposited layer 130, and the at least one particle structure 150.

[0113] In some non-limiting examples, as shown, at least one of: the patterning coating 110, the deposited layer 130, and the at least one particle structure 150, may be covered by at least one overlying layer 170.

[0114] In some non-limiting examples, such overlying layer 170 may comprise at least one of: an encapsulation layer, and an optical coating. In some non-limiting examples, an encapsulation layer may comprise at least one of: a glass cap, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a TFE layer, provided to encapsulate the device 100. In some non-limiting examples, an optical coating may comprise at least one of: an optical, and a structural, coating, and at least one component thereof, including without limitation, a polarizer, a color filter, an anti-reflection coating, an anti-glare coating, a cover glass, and an optically clear adhesive (OCA).

[0115] In some non-limiting examples, at least one of: a substantially thin patterning coating 110 in the first portion 101, and a deposited layer 130 in the second portion 102, may provide a substantially planar surface on which the overlying layer 170 may be deposited. In some non-limiting examples, providing such a substantially planar surface for application of such overlying layer 170 may increase adhesion thereof to such surface.

[0116] In some non-limiting examples, the optical coating may be used to modulate optical properties of light being at least one of: transmitted, emitted, and absorbed, by the device 100, including without limitation, plasmon modes. In some non-limiting examples, the optical coating may be used as at least one of: an optical filter, index-matching coating, optical outcoupling coating, scattering layer, diffraction grating, and parts thereof.

[0117] In some non-limiting examples, the optical coating may be used to modulate at least one optical microcavity effect in the device 100 by, without limitation, tuning at least one of: the total optical path length, and the refractive index thereof. At least one optical property of the device 100 may be affected by modulating at least one optical microcavity effect including without limitation, the output light, including without limitation, at least one of: an angular dependence of an intensity thereof, and a wavelength shift thereof. In some non-limiting examples, the optical coating may be a non-electrical component, that is, the optical coating may not be configured to at least one of: conduct, and transmit, electrical current during normal device operations.

[0118] In some non-limiting examples, the optical coating may be formed of any deposited material 1131, and in some non-limiting examples, may employ any mechanism of depositing a deposited layer 130 as described herein.Opto-Electronic Device

[0119] Turning now to FIG. 2, there is shown a simplified block diagram from a longitudinal aspect, of an opto-electronic device 200, which may be, in some non-limiting examples, an electro-luminescent device 200, according to the present disclosure. In some non-limiting examples, the device 200 may be an OLED.

[0120] In some non-limiting examples, as shown, the device 200 may comprise a substrate 10, upon which a frontplane 201, comprising a plurality of layers, respectively, a first electrode 220, at least one semiconducting layer 230, and a second electrode 240, are disposed. In some non-limiting examples, the frontplane 201 may provide mechanisms for at least one of: emission of light, including without limitation, photons, and manipulation of emitted light.

[0121] In some non-limiting examples, various coatings of such devices 200 may be formed by vacuum-based deposition processes.

[0122] In some non-limiting examples, as shown, the second electrode 240 may extend partially over the patterning coating 110 in a transition region 245.

[0123] Although not shown, in some non-limiting examples, at least one particle structure 150 of a discontinuous layer 160 of a deposited material 1131, of which the deposited layer 130 may be comprised, may extend partially over the patterning coating 110 in the transition region 245. In some non-limiting examples, such discontinuous layer 160 may form at least a part of the second electrode 240.

[0124] In some non-limiting examples, as shown, the device 200 may be electrically coupled with a power source 204. When so coupled, the device 200 may emit light, including without limitation, photons, as described herein.Substrate

[0125] In some non-limiting examples, as shown, the substrate 10 may comprise a base substrate 215. In some non-limiting examples, the base substrate 215 may be formedof material suitable for use thereof, including without limitation, at least one of: an inorganic material, including without limitation, at least one of: Si, glass, metal (including without limitation, a metal foil), sapphire, and other inorganic material, and an organic material, including without limitation, a polymer, including without limitation, at least one of: a polyimide, and an Si-based polymer. In some non-limiting examples, the base substrate 215 may be one of: rigid, and flexible. In some non-limiting examples, the substrate 10 may be defined by at least one planar surface. In some non-limiting examples, the substrate 10 may have at least one exposed layer surface 11 that supports at least one frontplane 201 component of the device 200, including without limitation, at least one of: the first electrode 220, the at least one semiconducting layer 230, and the second electrode 240.

[0126] In some non-limiting examples, such surface may be at least one of: an organic surface, and an inorganic surface.

[0127] In some non-limiting examples, although not shown, the substrate 10 may comprise, in addition to the base substrate 215, at least one additional at least one of: organic, and inorganic, layer (not shown nor specifically described herein) supported on an exposed layer surface 11 of the base substrate 215.

[0128] In some non-limiting examples, such additional layers may comprise, at least one organic layer, which may at least one of: comprise, replace, and supplement, at least one of the semiconducting layers 230.

[0129] In some non-limiting examples, such additional layers may comprise at least one inorganic layer, which may comprise, at least one electrode, which in some nonlimiting examples, may at least one of: comprise, replace, and supplement, at least one of: the first electrode 220, and the second electrode 240.Backplane and TFT structure(s) embodied therein

[0130] In some non-limiting examples, as shown, such additional layers may comprise a backplane 202. In some non-limiting examples, the backplane 202 may comprise at least one of: power circuitry, and switching elements for driving the device 200,including without limitation, at least one of: at least one electronic TFT structure 206, and at least one component thereof, that may be formed by a photolithography process.

[0131] In some non-limiting examples, the backplane 202 of the substrate 10 may comprise at least one electronic, including without limitation, an opto-electronic, component, including without limitation, one of: transistors, resistors, and capacitors, such as which may support the device 200 acting as one of: an active-matrix, and a passive matrix, device 200. In some non-limiting examples, such structures may be a thin-film transistor (TFT) structure 206.

[0132] In some non-limiting examples, the TFT structure 206 may comprise one of a: top-gate, bottom-gate, n-type, and p-type, TFT structure 206. In some non-limiting examples, the TFT structure 206 may incorporate one of: amorphous Si (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline Si (LTPS).First Electrode

[0133] In some non-limiting examples, as shown, the first electrode 220 may be deposited over the substrate 10. In some non-limiting examples, the first electrode 220 may be electrically coupled with at least one of: a terminal of the power source 204, and ground. In some non-limiting examples, the first electrode 220 may be so coupled through at least one driving circuit which, in some non-limiting examples, may incorporate the at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0134] In some non-limiting examples, the first electrode 220 may comprise one of: an anode, and a cathode. In some non-limiting examples, the first electrode 220 may be an anode.

[0135] In some non-limiting examples, the first electrode 220 may be formed by depositing at least one thin conductive film, over (a part of) the substrate 10. In some nonlimiting examples, there may be a plurality of first electrodes 220, disposed in a spatial arrangement over a lateral aspect of the substrate 10. In some non-limiting examples, at least one of such at least one first electrodes 220 may be deposited over (a part of) a TFT insulating layer 207 disposed in a lateral aspect in a spatial arrangement. In some nonlimiting examples, at least one of such at least one first electrodes 220 may extend throughan opening of the corresponding TFT insulating layer 207 to be electrically coupled with an electrode of the at least one TFT structure 206 in the backplane 202.

[0136] In some non-limiting examples, at least one of: the at least one first electrode 220, and at least one thin film thereof, may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: magnesium (Mg), aluminum (Al), calcium (Ca), zinc (Zn), silver (Ag), cadmium (Cd), barium (Ba), and ytterbium (Yb), including without limitation, alloys comprising any of such materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, in varying proportions, including without limitation, combinations of any plurality thereof in at least one layer, any at least one of which may be, without limitation, a thin film.Second Electrode

[0137] In some non-limiting examples, as shown, the second electrode 240 may be deposited over the at least one semiconducting layer 230. In some non-limiting examples, the second electrode 240 may be electrically coupled with at least one of: a terminal of the power source 204, and ground. In some non-limiting examples, the second electrode 240 may be so coupled through at least one driving circuit, which in some non-limiting examples, may incorporate the at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0138] In some non-limiting examples, the second electrode 240 may comprise one of: an anode, and a cathode. In some non-limiting examples, the second electrode 240 may be a cathode.

[0139] In some non-limiting examples, the second electrode 240 may be formed by depositing a deposited layer 130, in some non-limiting examples, as at least one thin film, over (a part of) the at least one semiconducting layer 230.

[0140] In some non-limiting examples, there may be a plurality of second electrodes 240, disposed in a spatial arrangement over a lateral aspect of the at least one semiconducting layer 230.

[0141] In some non-limiting examples, the at least one second electrode 240 may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including without limitation, alloys comprising at least one of: any of such materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, including without limitation, in varying proportions, zinc oxide (ZnO), and other oxides comprising at least one of: In, and Zn, in at least one layer, and at least one non-metallic material, any of which may be, without limitation, a thin conductive film. In some non-limiting examples, for a Mg: Ag alloy, such alloy composition may range between about 1 :9-9: 1 by volume.

[0142] In some non-limiting examples, the deposited layer 130 may be deposited in a second portion 102, by exposing the exposed layer surface 11 of the device 200, which may, in some non-limiting examples, comprise the at least one semiconducting layer 230, to a vapor flux 1012 of a patterning material 1011 (FIG. 10), including without limitation, using a shadow mask 1015 (FIG. 10), to form a patterning coating 110 in the first portion 101. Whether a shadow mask 1015 is employed, in some non-limiting examples, as shown in FIG. 2, the patterning material 110 may be restricted, in its lateral aspect, substantially to a non-emissive region 211, including without limitation, at least one (signal-) transmissive region 212 located therein.

[0143] In some non-limiting examples, the deposition of the second electrode 240 may be performed using one of: an open mask, and a mask-free deposition process.

[0144] In some non-limiting examples, the second electrode 240 may comprise a plurality of such coatings. In some non-limiting examples, such coatings may be distinct coatings disposed on top of one another.

[0145] In some non-limiting examples, the second electrode 240 may comprise a Yb / Ag bi-layer coating. In some non-limiting examples, such bi-layer coating may be formed by depositing a Yb coating, followed by an Ag coating. In some non-limiting examples, a thickness of such Ag coating may exceed a thickness of the Yb coating.

[0146] In some non-limiting examples, the second electrode 240 may be a multicoating electrode 240 comprising a plurality of one of: a metallic coating, and an oxide coating.

[0147] In some non-limiting examples, the second electrode 240 may comprise a fullerene and Mg.

[0148] In some non-limiting examples, such coating may be formed by depositing a fullerene coating followed by an Mg coating. In some non-limiting examples, a fullerene may be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. In some non-limiting examples, such coatings may be described in at least one of: United States Patent Application Publication No. 2015 / 0287846 published 8 October 2015, and in PCT International Application No. PCT / IB2017 / 054970 filed 15 August 2017 and published as W02018 / 033860 on 22 February 2018.Semiconducting layer

[0149] In some non-limiting examples, as shown, the at least one semiconducting layer 230 may comprise a plurality of layers 231, 233, 235, 237, 239, any of which may be disposed, in some non-limiting examples, in a thin film, in a stacked configuration, which may include, without limitation, at least one of: a hole injection layer (HIL) 231, a hole transport layer (HTL) 233, an emissive layer (EML) 235, an electron transport layer (ETL) 237, and an electron injection layer (EIL) 239.

[0150] In some non-limiting examples, although not shown, the at least one semiconducting layer 230 may form a “tandem” structure comprising a plurality of EMLs 235. In some non-limiting examples, such tandem structure may also comprise at least one charge generation layer (CGL).

[0151] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 200 may be varied by one of: omitting, and combining, at least one of the semiconductor layers 231, 233, 235, 237, 239.

[0152] In some non-limiting examples, any of the layers 231, 233, 235, 237, 239 of the at least one semiconducting layer 230 may comprise any number of sub-layers. In some non-limiting examples, any of such layers 231, 233, 235, 237, 239, including withoutlimitation, sub-layer(s) thereof may comprise various ones of: a mixture, and a composition gradient. In some non-limiting examples, although not shown, the device 200 may comprise at least one layer comprising one of: an inorganic, and an organometallic, material, and may not be necessarily limited to devices 200 comprised solely of organic materials. In some non-limiting examples, the device 200 may comprise at least one quantum dot (QD).

[0153] In some non-limiting examples, the HIL 231 may be formed using a hole injection material, which may, in some non-limiting examples, facilitate injection of holes by the anode.

[0154] In some non-limiting examples, the HTL 233 may be formed using a hole transport material, which may, in some non-limiting examples, exhibit high hole mobility.

[0155] In some non-limiting examples, the ETL 237 may be formed using an electron transport material, which may, in some non-limiting examples, exhibit high electron mobility.

[0156] In some non-limiting examples, the EIL 239 may be formed using an electron injection material, which may, in some non-limiting examples, facilitate injection of electrons by the cathode.

[0157] In some non-limiting examples, the at least one EML 235 may be formed, in some non-limiting examples, by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material may be at least one of: a fluorescent emitter material, a phosphorescent emitter material, and a thermally activated delayed fluorescence (TADF) emitter material.

[0158] In some non-limiting examples, the emitter material may be one of a R(ed) emitter material, a G(reen) emitter material, and a B(lue) emitter material, that is, an emitter material that facilitates the emission of respectively, R(ed), G(reen), and B(lue) light.

[0159] In some non-limiting examples, the device 200 may be an OLED in which the at least one semiconducting layer 230 may comprise at least one EML 235 interposed between conductive thin film electrodes 220, 240, whereby, when a potential difference is applied across them, holes may be injected into the at least one semiconducting layer 230through the anode and electrons may be injected into the at least one semiconducting layer 230 through the cathode, to migrate toward the at least one EML 235 and combine to emit light in the form of photons.

[0160] In some non-limiting examples, the device 200 may be an electroluminescent QD device 300 in which the at least one semiconducting layer 230 may comprise an active layer comprising at least one QD. When current is provided by the power source 204 to the first electrode 220 and second electrode 240, light, including without limitation, in the form of photons, may be emitted from the active layer comprising the at least one semiconducting layer 230 between them.

[0161] In some non-limiting examples, including where the device 200 comprises a lighting panel, an entire lateral aspect of the device 200 may correspond to a single emissive element. As such, the substantially planar cross-sectional profile shown in FIG. 2 may extend substantially along the entire lateral aspect of the device 200, such that light is emitted from the device 200 substantially along the entirety of the lateral extent thereof. In some non-limiting examples, such single emissive element may be driven by a single driving circuit of the device 200.

[0162] In some non-limiting examples, including where the device 200 comprises a display module, the lateral aspect of the device 200 may be sub-divided into a plurality of emissive regions 210 of the device 200, in which the longitudinal aspect of the device structure 200, within each of the emissive region(s) 210, may cause light to be emitted therefrom when energized.

[0163] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 200 may be varied by the introduction of at least one additional layer (not shown) at appropriate position(s) within the at least one semiconducting layer 230 stack, including without limitation, at least one of a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), a charge transport layer (CTL) (not shown), and a charge injection layer (CIL) (not shown).

[0164] In some non-limiting examples, the patterning coating 110 may be formed concurrently with the at least one semiconducting layer(s) 230. In some non-limiting examples, at least one material used to form the patterning coating 110 may also be used toform the at least one semiconducting layer(s) 230. In some non-limiting examples, the ETL 237 of the at least one semiconducting layer 230 may be a patterning coating 110 that may be deposited in the first portion 101 and the second portion 102 during the deposition of the at least one semiconducting layer 230. The EIL 239 may then be selectively deposited in the emissive region 210 of the second portion 102 over the ETL 237, such that the exposed layer surface 11 of the ETL 237 in the first portion 101 may be substantially devoid of the EIL 239. The exposed layer surface 11 of the EIL 239 in the emissive region 210 and the exposed layer surface 11 of the ETL 237, which acts as the patterning coating 110, may then be exposed to a vapor flux 1132 of the deposited material 1131 to form a closed coating 140 of the deposited layer 130 on the EIL 239 in the second portion 102, and a discontinuous layer 160 of the deposited material 1131 on the ETL 237 in the first portion 101, such that, in some non-limiting examples, at least one stage for fabricating the device 200 may be reduced.Emissive Region(s)

[0165] In some non-limiting examples, including where the OLED device 200 may comprise a display module, the lateral aspect of the device 200 may be sub-divided into a plurality of emissive regions 210 thereof, in which the longitudinal aspect of the structure thereof, within each of the emissive region(s) 210, may cause light to be emitted therefrom when energized.

[0166] In some non-limiting examples, an individual emissive region 210 may have an associated pair of electrodes 220, 240, one of which may act as an anode and the other of which may act as a cathode, and at least one semiconducting layer 230 therebetween. Such an emissive region 210 may emit light at a given wavelength spectrum and may correspond to one of: a pixel 415, and a sub-pixel 216 thereof. In some non-limiting examples, a plurality of sub-pixels 216, including without limitation, a cluster 412 thereof, each corresponding to and emitting light of a different wavelength (range) may collectively form a pixel 415.

[0167] In some non-limiting examples, the wavelength spectrum may correspond to a colour in, without limitation, the visible spectrum. The light at a first wavelength (range) emitted by a first sub-pixel 216 of a pixel 415 may perform differently than the light at asecond wavelength (range) emitted by a second sub-pixel 216 thereof because of the different wavelength (range) involved.

[0168] In some non-limiting examples, an active region 208 of an individual emissive region 210 may be defined to be bounded, in the longitudinal aspect, by the first electrode 220 and the second electrode 240, and to be confined, in the lateral aspect, to an emissive region 210, defined by presence of each of the first electrode 220, the second electrode 240, and the at least one semiconducting layer 230 therebetween (“emissive region layers”), that is, the first electrode 220, the second electrode 240, and the at least one semiconducting layer 230 therebetween, overlap laterally.

[0169] Those having ordinary skill in the relevant art will appreciate that the lateral aspect of the emissive region 210, and thus the lateral boundaries of the active region 208, may not correspond to the entire lateral aspect of at least one of: the first electrode 220, and the second electrode 240. Rather, the lateral aspect of the emissive region 210 may be substantially no more than the lateral extent of either of: the first electrode 220, and the second electrode 240. In some non-limiting examples, at least one of: parts of the first electrode 220 may be covered by at least one pixel definition layer (PDL) 209, and parts of the second electrode 240 may not be disposed on the at least one semiconducting layer 230, with the result, in at least one scenario, that the emissive region 210 may be laterally constrained thereby.

[0170] In some non-limiting examples, at least one of the various emissive region layers may be deposited by deposition of a corresponding constituent emissive region layer material.

[0171] In some non-limiting examples, some of the at least one semiconducting layers 230 may be laid out in a desired pattern by vapor deposition of the corresponding emissive region layer material through a fine metal mask (FMM) having apertures corresponding to the desired locations where the emissive region layer material is to be deposited. In some non-limiting examples, a plurality of the emissive region layers may be laid out in a similar pattern, including without limitation, by depositing the respective emissive region layer material thereof in their respective deposition stages using an FMM.

[0172] In some non-limiting examples, as discussed herein, the emissive region layer material corresponding to at least one of the first electrode 220 and the second electrode 240, including without limitation, the second electrode 240, may be deposited by prior deposition of a patterning coating 110 by vapor deposition of a patterning material 1011 through an FMM having apertures corresponding to the desired locations where the patterning coating 110 is to be deposited, and thereafter depositing the emissive region layer material using one of: an open mask, and a mask-free, deposition process.

[0173] In some non-limiting examples, the patterning coating 110 may be adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 of which the emissive region layer material may be comprised, to be deposited thereon, including without limitation, an initial sticking probability against the deposition of the deposited material 1131 that is no more than an initial sticking probability against the deposition of the deposited material 1131 of the exposed layer surface 11 of the at least one semiconducting layer 230.

[0174] In some non-limiting examples, the first electrode 220 may be disposed over an exposed layer surface 11 of the device 200, in some non-limiting examples, within at least a part of the lateral aspect of the emissive region 210. In some non-limiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 415 / 216, the exposed layer surface 11, may, at the time of deposition of the first electrode 220, comprise the TFT insulating layer 207 of the various TFT structures 206 that make up the driving circuit for the emissive region 210 corresponding to a single display (sub-) pixel 415 / 216.

[0175] In some non-limiting examples, the TFT insulating layer 207 may be formed with an opening extending therethrough to permit the first electrode 220 to be electrically coupled with a TFT electrode including, without limitation, a TFT drain electrode.

[0176] Those having ordinary skill in the relevant art will appreciate that the driving circuit may comprise a plurality of TFT structures 206. In FIG. 2, for purposes of simplicity of illustration, only one TFT structure 206 may be shown, but it will be appreciated by those having ordinary skill in the relevant art, that such TFT structure 206may be representative of at least one of: such plurality thereof, and at least one component thereof, that comprise the driving circuit.

[0177] In some non-limiting examples, an extremity of the first electrode 220 may be covered by at least one PDL 209 such that a part of the at least one PDL 209 may be interposed between the first electrode 220 and the at least one semiconducting layer 230, such that such extremity of the first electrode 220 may lie beyond the active region 208 of the associated emissive region 210.

[0178] In some non-limiting examples, the at least one semiconducting layer 230 (including without limitation, at least one of: layers 231, 233, 235, 237, 239 thereof) may be deposited over the exposed layer surface 11 of the device 200, including at least a part of the lateral aspect of such emissive region 210 of the (sub-) pixel(s) 415 / 216. In some nonlimiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 415 / 216, such exposed layer surface 11, may, at the time of deposition of such at least one semiconducting layer 230 comprise the first electrode 220.

[0179] In some non-limiting examples, the at least one semiconducting layer 230 may also extend beyond the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 415 / 216 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 211. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-emissive region(s) 211 may, at the time of deposition of the at least one semiconducting layer 230, comprise the PDL(s) 209.

[0180] In some non-limiting examples, the second electrode 240 may be disposed over an exposed layer surface 11 of the device 200, including at least a part of the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 415 / 216. In some non-limiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 415 / 216, such exposed layer surface 11, may, at the time of deposition of the second electrode 220, comprise the at least one semiconducting layer 230.

[0181] In some non-limiting examples, the second electrode 240 may also extend beyond the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 415 / 216 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 211. In some non-limiting examples, an exposed layer surface 11 of such surrounding non-emissiveregion(s) 211 may, at the time of deposition of the second electrode 240, comprise the PDL(s) 209.

[0182] In some non-limiting examples, the second electrode 240 may extend throughout a substantial part, including without limitation, substantially all, of the lateral aspects of the surrounding non-emissive region(s) 211.

[0183] In some non-limiting examples, individual emissive regions 210 of the device 200 may be laid out in a lateral pattern. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which in some non-limiting examples, may extend at an angle relative to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially normal to the first lateral direction. In some non-limiting examples, the pattern may have a number of elements in such pattern, each element being characterized by at least one feature thereof, including without limitation, at least one of: a wavelength of light emitted by the emissive region 210 thereof, a shape of such emissive region 210, a dimension (along at least one of: the first, and second, lateral directi on(s)), an orientation (relative to at least one of: the first, and second, lateral directi on(s)), and a spacing (relative to at least one of: the first, and second, lateral direction(s)) from a previous element in the pattern. In some non-limiting examples, the pattern may repeat in at least one of: the first, and second, lateral directi on(s).

[0184] In some non-limiting examples, each individual emissive region 210 of the device 200 may be associated with, and driven by, a corresponding driving circuit within the backplane 202 of the device 200, for driving an OLED structure for the associated emissive region 210. In some non-limiting examples, including without limitation, where the emissive regions 210 may be laid out in a regular pattern extending in both the first (row) lateral direction and the second (column) lateral direction, there may be a signal line in the backplane 202, corresponding to each row of emissive regions 210 extending in the first lateral direction and a signal line, corresponding to each column of emissive regions 210 extending in the second lateral direction. In such a non-limiting configuration, a signal on a row selection line may energize the respective gates of the switching TFT structure(s) 206 electrically coupled therewith and a signal on a data line may energize the respective sources of the switching TFT structure(s) 206 electrically coupled therewith, such that asignal on a row selection line / data line pair may electrically couple and energise, by the positive terminal of the power source, the anode of the OLED structure of the emissive region 210 associated with such pair, causing the emission of a photon therefrom, the cathode thereof being electrically coupled with the negative terminal of the power source.

[0185] In some non-limiting examples, a cluster 412 corresponding to a single display pixel 415 may comprise three sub-pixels 216, which in some non-limiting examples, may correspond respectively to a single sub-pixel 216 of each of three colours, including without limitation, at least one of: a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B. In some non-limiting examples, a cluster 412 corresponding to a single display pixel 415 may comprise four sub-pixels 216, each corresponding respectively to a single sub-pixel 216 of each of two colours, including without limitation, a R(ed) subpixel 216R, and a B(lue) sub-pixel 216B, and two sub-pixels 216 of a third colour, including without limitation, a G(reen) sub-pixel 216G. In some non-limiting examples, a cluster 412 corresponding to a single display pixel 415 may comprise four sub-pixels 216, which in some non-limiting examples, may correspond respectively to a single sub-pixel 216 of each of three colours, including without limitation, at least one of: a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, and a fourth W(hite) sub-pixel 216w.

[0186] In some non-limiting examples, the emission spectrum of the light emitted by a given (sub-) pixel 415 / 216 may correspond to the colour by which the (sub-) pixel 415 / 216 may be denoted. In some non-limiting examples, the wavelength of the light may not correspond to such colour, but further processing may be performed, in a manner apparent to those having ordinary skill in the relevant art, to transform the wavelength to one that does so correspond.

[0187] In some non-limiting examples, the emission spectrum of the light emitted by a given (sub-) pixel 415 / 216, corresponding to the colour by which the (sub-) pixel 415 / 216 may be denoted, may be related to at least one of: the structure and composition of the at least one semiconducting layer 230 extending between the first electrode 220 and the second electrode 240 thereof, including without limitation, the at least one EML 235. In some non-limiting examples, the at least one EML 235 of the at least one semiconducting layer 230 may be tuned to facilitate the emission of light having an emission spectrumcorresponding to the colour by which the (sub-) pixel 415 / 216 may be denoted. In some non-limiting examples, the EML 235R of a R(ed) sub-pixel 216R may comprise a R(ed) EML material, including without limitation, a host material doped with a R(ed) emitter material. In some non-limiting examples, the EML 235G of a G(reen) sub-pixel 216G may comprise a G(reen) EML material, including without limitation, a host material doped with a G(reen) emitter material. In some non-limiting examples, the EML 235B of a B(lue) subpixel 216B may comprise B(lue) EML material, including without limitation, a host material doped with a B(lue) emitter material.

[0188] In some non-limiting examples, at least one characteristic of at least one of the at least one semiconducting layer 230, including without limitation, the HIL 231, the HTL 233, the EML 235, the ETL 237, and the EIL 239, including without limitation, a presence thereof, an absence thereof, a thickness thereof, a composition thereof, and an order thereof, in the longitudinal aspect, may be selected to facilitate emission therefrom of light having a wavelength spectrum corresponding to the colour by which a given sub-pixel 216 may be denoted, including without limitation, at least one of: R(ed), G(reen), and B(lue).

[0189] In some non-limiting examples, emission of light having a wavelength spectrum corresponding to a plurality of colours selected from: R(ed), G(reen), and B(lue) may facilitate emission of light having a wavelength spectrum corresponding to a different colour, including without limitation W(hite) (R+G+B), Y(ellow) (R+G), C(yan) (G+B), and M(agenta) (B+R), according to the additive colour model.

[0190] In some non-limiting examples, the exposed layer surface 11 of the device 100 may be exposed to a vapor flux 1132 of a deposited material 1131, including without limitation, in one of: an open mask, and mask-free, deposition process.

[0191] In some non-limiting examples, in at least a part of the emissive region 210, the at least one semiconducting layer 230 may be deposited over the exposed layer surface 11 of the device 200, which in some non-limiting examples, may comprise the first electrode 220.

[0192] In some non-limiting examples, the exposed layer surface 11 of the device 200, which may, in some non-limiting examples, comprise the at least one semiconductinglayer 230, may be exposed to a vapor flux 1012 of the patterning material 1011, including without limitation, using a shadow mask 1015, to form a patterning coating 110 in the first portion 101.

[0193] In some non-limiting examples, a lateral aspect of at least one emissive region 210 may extend across and include at least one TFT structure 206 associated therewith for driving the emissive region 210 along data and scan lines (not shown), which, in some non-limiting examples, may be formed of at least one of: Cu, and a TCO.

[0194] In some non-limiting examples, the (sub-) pixels 415 / 216 may be disposed in a side-by-side arrangement. In some non-limiting examples, a (colour) order of the subpixels 216 of a first pixel 415 may be the same as a (colour) order of the sub-pixels 216 of a second pixel 415. In some non-limiting examples, a (colour) order of the sub-pixels 216 of a first pixel 415 may be different from a (colour) order of the sub-pixels 216 of a second pixel 415.

[0195] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 415 may be aligned in at least one of: a row, column, and array, arrangement.

[0196] In some non-limiting examples, a first at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 415 may comprise sub-pixels 216 of one of: a same, and a different, colour.

[0197] In some non-limiting examples, a first at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 415 may be aligned with at least one of: a second, and a third, at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 415.

[0198] In some non-limiting examples, a first at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 415 may be one of: offset from, and misaligned with, at least one of: a second, and a third, at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 415.

[0199] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 415 of such at least one of: first, second, and third, at least one of: a row, and a column, may bearranged such that corresponding sub-pixels 216 of each of the at least one of: first, second, and third, at least one of: a row, and a column, may be of a same colour.

[0200] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 415 of such at least one of: first, second, and third, at least one of: a row, and a column, may be arranged such that corresponding sub-pixels 216 of each of the at least one of: first, second and third, at least one of: a row, and a column, may be of different colours.

[0201] In some non-limiting examples, in at least one signal-exchanging part 903 of a display panel 900, the at least one transmissive region 212 may be disposed between a plurality of emissive regions 210. In some non-limiting examples, the at least one transmissive region 212 may be disposed between adjacent (sub-) pixels 415 / 216. In some non-limiting examples, the adjacent sub-pixels 216 surrounding the at least one transmissive region 212 may form part of a same pixel 415. In some non-limiting examples, the adjacent sub-pixels 216 surrounding the at least one transmissive region 212 may be associated with different pixels 415.

[0202] In some non-limiting examples, a region (“cathode-free region”), including without limitation, the at least one transmissive region 212, that may be substantially devoid of a closed coating 140 of a deposited material 1131, including without limitation, a material that may be used to form the second electrode 240, in some non-limiting examples, may exhibit different opto-electronic characteristics from other regions, including without limitation, the at least one emissive region 210. In some non-limiting examples, such cathode-free regions may nevertheless comprise some deposited material 1131, including without limitation, in the form of a discontinuous layer 160 of at least one (instance of a) particle structure 150.

[0203] In some non-limiting examples, this may be achieved by laser ablation of the second electrode material. However, in some non-limiting examples, laser ablation may create a debris cloud, which may impact the vapour deposition process.

[0204] In some non-limiting examples, this may be achieved by disposing a (particle structure) patterning coating 110p, which may, in some non-limiting examples, be a nucleation inhibiting coating (NIC), using an FMM, in a pattern on an exposed layer surface11 of the at least one semiconducting layer 230 prior to depositing a deposited material1131 thereon.

[0205] In some non-limiting examples, the patterning coating 110 may be adapted to impact a propensity of a vapor flux 1132 of the deposited material 1131 to be deposited thereon, including without limitation, an initial sticking probability against the deposition of the deposited material 1131 that is no more than an initial sticking probability against the deposition of the deposited material 1131 of the exposed layer surface 11 of the at least one semiconducting layer 230.

[0206] In some non-limiting examples, the patterning coating 110 may be deposited in a pattern that may correspond to the first portion 101 of a lateral aspect, including without limitation, of at least some of the transmissive regions 212.

[0207] In some non-limiting examples, the patterning coating 110 may be deposited in a plurality of stages, each using a different FMM defining a different pattern within the first portion 101, that respectively correspond to a different subset of the transmissive regions 212.

[0208] In some non-limiting examples, the device 200 may, subsequent to (all of the stages of) the deposition of the patterning coating 110, be subjected to a vapor flux 1132 of the deposited material 1131, in one of: an open mask, and mask-free, deposition process, to form the second electrode 240 for each of the emissive regions 210 corresponding to a (sub- ) pixel 415 / 216 in at least the second portion 102 of the lateral aspect, but not in the first portion 101 of the lateral aspect.

[0209] In some non-limiting examples, although not shown, the overlying layer 170 may be arranged above at least one of: the second electrode 240, and the patterning coating 110. In some non-limiting examples, although not shown, the overlying layer 170 may be deposited at least partially across the lateral extent of the opto-electronic device 200, in some non-limiting examples, covering the second electrode 240 in the second portion 102, and, in some non-limiting examples, at least partially covering the at least one particle structure 150 and forming an interface with the patterning coating 110 at the exposed layer surface 11 thereof in the first portion 101.Non-Emissive Regions

[0210] In some non-limiting examples, the various emissive regions 210 of the device 200 may be substantially surrounded and separated by, in at least one lateral direction, at least one non-emissive region 211, in which at least one of: the structure, and configuration, along the longitudinal aspect, of the device 200 shown, without limitation, may be varied, to substantially inhibit light to be emitted therefrom.

[0211] In some non-limiting examples, the non-emissive regions 211 may comprise those regions in the lateral aspect, that are substantially devoid of an emissive region 210.

[0212] In some non-limiting examples, the longitudinal topology of the various layers of the at least one semiconducting layer 230 may be varied to define at least one emissive region 210, surrounded (at least in one lateral direction) by at least one non- emissive region 211.

[0213] In some non-limiting examples, an implementation of the longitudinal aspect of the device 200 as applied to an emissive region 210 corresponding to a single display (sub-) pixel 415 / 216 of the display 200 may now be described. While features of such implementation are shown to be specific to the emissive region 210, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, more than one emissive region 210 may encompass features in common.

[0214] In some non-limiting examples, the lateral aspects of the surrounding non- emissive region(s) 211 may be characterized by the presence of a corresponding PDL 209.

[0215] In some non-limiting examples, a thickness of the PDL 209 may increase from a minimum, where it covers the extremity of the first electrode 220, to a maximum beyond the lateral extent of the first electrode 220. In some non-limiting examples, the change in thickness of the at least one PDL 209 may define a valley shape centered about the emissive region 210. In some non-limiting examples, the valley shape may constrain the field of view (FOV) of the light emitted by the emissive region 210.

[0216] While the PDL(s) 209 have been generally illustrated herein as having a linearly-sloped surface to form a valley-shaped configuration that define the emissive region(s) 210 surrounded thereby, those having ordinary skill in the relevant art willappreciate that in some non-limiting examples, at least one of: the shape, aspect ratio, thickness, width, and configuration of such PDL(s) 209 may be varied. In some nonlimiting examples, a PDL 209 may be formed with one of: a substantially steep part and a more gradually sloped part. In some non-limiting examples, such PDL(s) 209 may be configured to extend substantially normally away from a surface on which it is deposited, that may cover at least one edge of the first electrode 220. In some non-limiting examples, such PDL(s) 209 may be configured to have deposited thereon at least one semiconducting layer 230 by a solution-processing technology, including without limitation, by printing, including without limitation, ink-jet printing.

[0217] In some non-limiting examples, the PDLs 209 may be deposited substantially over the TFT insulating layer 207, although, as shown, in some non-limiting examples, the PDLs 209 may also extend over at least a part of the deposited first electrode 220, including without limitation, its outer edges.

[0218] In some non-limiting examples, the lateral extent of at least one of the non- emissive regions 211 may be at least, and in some non-limiting examples, exceed, including without limitation, be a multiple of, the lateral extent of the emissive region 210 interposed therebetween.

[0219] In some non-limiting examples, a thickness of at least one PDL 209 in at least one transmissive region 212, in some non-limiting examples, of at least one non- emissive region 211, interposed between adjacent emissive regions 210, in some nonlimiting examples, at least in a region laterally spaced apart therefrom, and in some nonlimiting examples; although not shown, of the TFT insulating layer 207, may be reduced in order to enhance at least one of: a transmittivity, and a transmittivity angle, relative to and through the layers of a display panel 900, to facilitate transmission of light therethrough.Light- Ab sorbing Laver

[0220] An NP is a particle of matter whose predominant characteristic size is of nanometer (nm) scale, generally understood to be between about: 1-300 nm. At nm scale, NPs of a given material may possess unique properties (including without limitation, at least one of: optical, chemical, physical, and electrical) relative to the same material in bulk form,including without limitation, an amount of absorption of light exhibited by such NPs at different wavelengths (ranges).

[0221] These properties may be exploited when a plurality of NPs is formed into a layer, including without limitation, a discontinuous layer 160, of a layered semiconductor device 100, including without limitation, an opto-electronic device 200, to improve its performance.

[0222] Light-absorbing coatings, including without limitation, black matrix (BM) layers, take advantage of plasmonics, a branch of nanophotonics, which studies the resonant interaction of light with metals. Those having ordinary skill in the relevant art will appreciate that certain metal NPs, including without limitation, as part of a discontinuous layer 160, may exhibit at least one of: surface plasmon (SP) excitations, and coherent oscillations of free electrons, with the result that such NPs may one of: absorb, and scatter, light, including without limitation, light, in a range of the EM spectrum, including without limitation, (a sub-range of) the visible spectrum.

[0223] The optical response, including without limitation, at least one of: the (sub-) range of the EM spectrum over which absorption may be concentrated (absorption spectrum), refractive index, and extinction coefficient, of such one of: LSP excitations, and coherent oscillations, may be tailored by varying properties of such NPs, including without limitation, at least one of a: characteristic size, size distribution, shape, surface coverage, configuration, deposition density, dispersity, and property, including without limitation, at least one of: material, and degree of aggregation, of at least one of: the nanostructures, and a medium proximate thereto.

[0224] Such optical response, in respect of light-absorbing coatings, may include absorption of light, including without limitation, photons, incident thereon, thereby reducing reflection. In some non-limiting examples, the absorption may be concentrated in a range of the EM spectrum, including without limitation, (a sub-range of) the visible spectrum.

[0225] As disclosed herein, metal NPs may be introduced, in at least one discontinuous layer 160, to the device 100, in the form of at least one particle structure 150d.

[0226] Current mechanisms for introducing such a layer of NPs into such a device 100 have some drawbacks.

[0227] First, in some non-limiting examples, such NPs may be formed into at least one of: a close-packed layer, and dispersed into a matrix material, of such device 100. Consequently, in some non-limiting examples, the thickness of such an NP layer may be much thicker than the characteristic size of the NPs themselves. The thickness of such NP layer may impart characteristics in terms of at least one of: device performance, device stability, device reliability, and device lifetime that may reduce, including without limitation, obviate, any perceived advantages provided by the unique properties of NPs.

[0228] Second, techniques to synthesize NPs, in and for use in such devices, may introduce large amounts of at least one of: C, O, and sulfur (S) through various mechanisms.

[0229] In some non-limiting examples, wet chemical methods may be used to introduce NPs that have a precisely controlled at least one of: characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposited density, dispersity, and composition, of at least one of: the nanostructures, and a medium proximate thereto, into a device 100. However, such methods may, in some non-limiting examples, employ an organic capping group (such as the synthesis of citrate-capped Ag NPs) to stabilize the NPs, but such organic capping groups introduce at least one of: C, O, and S, into the synthesized NPs.

[0230] Still further, in some non-limiting examples, an NP layer deposited from solution may comprise at least one of: C, O, and S, because of the solvents used in deposition.

[0231] Additionally, these elements may be introduced as contaminants during at least one of: the wet chemical process, and the deposition of the NP layer.

[0232] However introduced, the presence of a high amount of at least one of: C, O, and S, in an NP layer of such a device 100, may erode at least one of: the performance, stability, reliability, and lifetime, of such device 100.

[0233] Third, when depositing an NP layer from solution, as the employed solvents dry, the NP layer(s) may tend to have non-uniform properties at least one of: across the NPlayer, and between different patterned regions of such layer. In some non-limiting examples, an edge of a given layer may be considerably at least one of: thicker, and thinner, than an internal region of such layer, which disparities may impact at least one of: the device performance, stability, reliability, and lifetime.

[0234] Fourth, while there are other methods (and processes) beyond wet chemical synthesis and solution deposition processes, of at least one of: synthesizing and depositing, NPs, including without limitation, a vacuum-based process such as, without limitation, PVD, such methods tend to provide substantially reduced control of the at least one of: characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposited density, dispersity, and composition, of the NPs deposited thereby. In some non-limiting examples, in a PVD process, the NPs tend to form a close-packed film as their size increases. As a result, methods such as PVD are generally not well-suited to form a layer of large disperse NPs with low surface coverage. Rather, the substantially reduced control of at least one of: the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposited density, dispersity, and composition, imparted by such methods may result in substantially reduced at least one of: device performance, stability, reliability, and lifetime.

[0235] In some non-limiting examples, a light-absorbing layer 305, comprising: a dielectric layer 350, 571, 572, and at least one particle structure 150BM, comprising a deposited material 1131, may be employed as part of a layered semiconductor device 100, for absorbing light incident on, and concomitantly, reducing reflection of light off, such device 100.

[0236] In some non-limiting examples, the dielectric layer 350, 571, 572 may act as, and in some non-limiting examples, comprise, a capping layer (CPL) 510 of the device 100.

[0237] In some non-limiting examples, the at least one particle structure 150BM of the light-absorbing layer 305 may be in the form of a discontinuous layer 160 formed on a particle structure patterning coating 110p.

[0238] While the at least one particle structure 150BM may absorb light incident thereon from beyond the layered semiconductor device 100, thus reducing reflection, those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples,the at least one particle structure 150BM may absorb light incident thereon that is emitted by an opto-electronic device 200. In some non-limiting examples, employing an lightabsorbing layer 305 as part of an opto-electronic device 200 may reduce reliance on a polarizer therein.

[0239] Turning now to FIG. 3, in some non-limiting examples, as shown, at least in the first portion 101, a supporting dielectric layer 350 may be deposited on an exposed layer surface 11 of the second electrode 240 of an opto-electronic device 200. In some nonlimiting examples, as shown, the supporting dielectric layer 350 may be deposited in both the emissive region 210 of a (sub-) pixel 415 / 216, and at least a part of at least one non- emissive region 211 adjacent thereto.

[0240] In some non-limiting examples, as shown, the at least one particle structure 150BM of the light-absorbing layer 305 may be deposited on an exposed layer surface 11 of the supporting dielectric layer 350 of the light-absorbing layer 305. In some non-limiting examples, as shown, the at least one particle structure 150BM may be limited to at least a part of at least one non-emissive region 211, such that the exposed layer surface 11 of the supporting dielectric layer 350 deposited in the emissive region 210 of a (sub-) pixel 415 / 216 adjacent thereto may be substantially devoid of the at least one particle structure 150BM of the light-absorbing layer 305.

[0241] In some non-limiting examples, the at least one particle structure 150BM of the light-absorbing layer 305 may be formed by depositing a closed coating 140 of the patterning coating 110 in the first portion 101 of the lateral aspect of the device 200, corresponding to the emissive region 210 of a (sub-) pixel 415 / 216, on an exposed layer surface 11 of an underlying layer 15, including without limitation, the supporting dielectric layer 350, and thereafter exposing the device 200 to a vapor flux 1132 of a deposited material 1131. Because an exposed layer surface 11 of the patterning coating 110 may have a substantially reduced propensity for the deposited material 1131 to be deposited thereon, when compared to the exposed layer surface 11 of the underlying layer 15, including without limitation, the supporting dielectric layer 350, on which the patterning coating 110 has been deposited, the deposited material 1131 may have a tendency to form as a discontinuous layer 160 of at least one particle structure 150BM in the second portion 102 ofthe lateral aspect, corresponding to at least a part of at least one non-emissive region 211 adjacent to the (sub-) pixel 415 / 216 of the first portion 101, that is substantially devoid of a closed coating 140 of the patterning coating 110. Further, the first portion 101, wherein the patterning coating 110 has formed a closed coating 140 thereon, may be substantially devoid of the deposited material 1131, including without limitation, the at least one particle structure 150BM, including without limitation, as one of: a discontinuous layer 160, and a closed coating 140, thereof.

[0242] The first portion 101 defines, at any given deposition stage, the lateral extent of the patterning coating 110, and the second portion 102 defines the lateral extent of deposition of a deposited material 1131 thereafter.

[0243] Those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, the location of the first portion 101, defining the lateral extent where the patterning coating 110 is formed for a first deposition stage, and the second portion 102, defining where the deposited material 1131 tends to form, including without limitation, as one of: a closed coating 140, and at least one particle structure 150BM, may change between such first deposition stage, and a subsequent second deposition stage.

[0244] In some non-limiting examples, as discussed herein, the second electrode 240 may itself have been formed by depositing a(n emissive region) patterning coating 110(e) in a first portion 101 that corresponds to at least (part of) (at least) one non-emissive region 211, and thereafter exposing an exposed layer surface 11 of the device 200 to a vapor flux 1132 of a deposited material 1131, such that a closed coating 140 of the deposited material 1131 forms a deposited layer 130 in the second portion 102 (corresponding to the emissive region 210) to form the second electrode 240, those having ordinary skill in the relevant art will appreciate that the location of the first portion 101, defining the lateral extent where the patterning coating 110 is formed, and the second portion 102, defining where the deposited material 1131 tends to form, including without limitation, as one of: a closed coating 140 (as shown in FIG. 2), and at least one particle structure 150BM (as shown in FIG. 3), will change between the stage of forming the second electrode 240 (as shown in FIG. 2) and the stage of forming the light-absorbing layer 305 (as shown in FIG. 3).

[0245] In some non-limiting examples, as shown, the light-absorbing layer 305 may be covered by an overlying layer 170, including without limitation, a TFE layer 572, including without limitation, at least one of: an LiF layer, and an SiNx / SiOxNy layer.

[0246] In some non-limiting examples, the at least one particle structure 150BM of the light-absorbing layer 305 may be formed by depositing a closed coating 140 of the patterning coating 110 in the first portion 101 of the lateral aspect of the device 200, on an exposed layer surface 11 of an underlying layer 15, including without limitation, the second electrode 240, and thereafter exposing the device 200 to a vapor flux 1132 of a deposited material 1131 co-deposited with a dielectric material of which the supporting dielectric layer 350 may be comprised. Because an exposed layer surface 11 of the patterning coating 110 may have a substantially reduced propensity for the deposited material 1131 to be deposited thereon, when compared to the exposed layer surface 11 of the underlying layer 15, including without limitation, the second electrode 240, on which the patterning coating 110 has been deposited, the deposited material 1131 has a tendency to form as at least one particle structure 150BM interspersed within the supporting dielectric layer 350, that may form a closed coating 140 over both the first portion 101, in which the patterning coating 110 has been deposited, and the second portion 102, which is substantially devoid of a closed coating 140 of the patterning coating 110. In this sense, the patterning coating 110 may serve as a particle structure patterning coating 110pin respect of the formation of the at least one particle structure 150BM (interspersed within the supporting dielectric layer 350) within the first portion 101, in which the (particle structure) patterning coating 110(p) has been deposited, and as a non-particle structure patterning coating 11 On in respect of the formation of a deposited layer 130 within the second portion 102.

[0247] In some non-limiting examples, although not shown, the at least one particle structure 150BM of the light-absorbing layer 305 may be interspersed within the supporting dielectric layer 350 of the light-absorbing layer 305.

[0248] In some non-limiting examples, as shown in FIG. 4A, in a version 400aof an opto-electronic device 200, the light-absorbing layer 305amay surround each emissive region 210 corresponding to a (sub-) pixel 415 / 216, so that it may absorb light incident on, and concomitantly, reduce reflection of light off, such device 200, while substantiallyleaving the emission of light generated by such emissive region 210 substantially unimpeded. In some non-limiting examples, as shown, the first portion 101, defining the lateral extent across which the patterning coating 110 is deposited, including without limitation, as a closed coating 140, may be restricted to substantially entirely the lateral aspect of each emissive region 210.

[0249] In some non-limiting examples, as shown in FIG. 4B, in a version 400b of an opto-electronic device 200, the light-absorbing layer 305b may surround a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a pair of G(reen) sub-pixels 216G, and a B(lue) sub-pixel 216B, while leaving (parts of) at least one non-emissive region 211 extending between adjacent sub-pixels 216 within such cluster 412, substantially uncovered.

[0250] In such scenario, although not shown, the first portion 101, defining the lateral aspect across which the patterning coating 110 is deposited, may extend across a plurality of emissive regions 210, each corresponding to a cluster 412, including without limitation, a pixel 415, of sub-pixels 216, together with at least (part of) (at least) one non- emissive region 211 extending between a pair of adjacent sub-pixels 216 in the cluster 412. In some non-limiting examples, the first portion 101 may comprise at least (part of) (at least) one non-emissive region 211 extending beyond, including without limitation, surrounding such cluster 412.

[0251] Turning now to FIG. 5A, there is shown, in a version 500aof an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0252] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a commonlayer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0253] In some non-limiting examples, as shown, a supporting dielectric layer 350 may be disposed on the exposed layer surface 11 of the second electrode 240 in both the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the non-emissive regions 211 adjacent thereto.

[0254] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 500a.

[0255] In some non-limiting examples, the supporting dielectric layer 350 may act as a (particle structure) patterning coating 110(p> adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon.

[0256] In some non-limiting examples, although not shown, the supporting dielectric layer 350 may comprise a plurality of layers, including without limitation, a first layer, proximate to the second electrode 240, comprising a higher-index material that is one of: adapted to impact, in a substantially poor manner, and not substantially adapted to impact, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, and a second layer, deposited on an exposed layer surface 11 of the first layer, that may act as a (particle structure) patterning coating 110(p) adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the lightabsorbing layer 305, comprised thereof, may be formed thereon. In some non-limiting examples, the first layer may comprise LiF.

[0257] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500amay be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0258] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0259] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0260] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0261] In some non-limiting examples, the patterning coating 110 may comprise a low index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise both a low index patterning material 1011 and a high index patterning material 1011.

[0262] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0263] In some non-limiting examples, as shown, the at least one particle structure 150BM may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 by exposure of the device 500a, including without limitation, the at least one patterningcoating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the supporting dielectric layer 350, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, to a vapor flux 1132 of a deposited material 1131.

[0264] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the supporting dielectric layer 350, the at least one particle structure 150BM tend(s) to form substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0265] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM of the light-absorbing layer 305.

[0266] Although not shown, in some non-limiting examples, some isolated particle structures 150 (denoted 150p) may tend to form in the first portion 101, including without limitation, proximate to lateral extremities thereof.

[0267] In some non-limiting examples, the existence of some isolated particle structures 150pon the exposed layer surface 11 of the patterning coating 110 in the first portion 101 may be understood from consideration of the example schematic cross-sectional view 600 of the interface between the patterning coating 110 in the first portion 101 and the at least one particle structure 150BM in the second portion 102.

[0268] Turning now to FIG. 6A, there may be shown a cross-sectional view 600 of the device 500athat may show in exaggerated form, an interface between the patterning coating 110 in the first portion 101 and the at least one particle structure 150BM of the lightabsorbing layer 305 in the second portion 102. FIG. 6B may show the device 600 in plan.

[0269] As may be better seen in FIG. 6B, in some non-limiting examples, the patterning coating 110 in the first portion 101 may be surrounded on all sides by the at least one particle structure 150BM of the light-absorbing layer 305, such that the first portion 101 may have a boundary that is defined by the further edge 615 of the patterning coating 110 inthe lateral aspect along each lateral axis. In some non-limiting examples, the patterning coating edge 615 in the lateral aspect may be defined by a perimeter of the first portion 101 in such aspect.

[0270] In some non-limiting examples, for illustrative purposes, the patterning coating 110 may be shown in its longitudinal aspect as a substantially stratified structure of substantially uniform thickness. However, upon careful consideration of FIG. 6A, in some non-limiting examples, the first portion 101 may comprise at least one patterning coating transition region 10 It, in the lateral aspect, in which a thickness of the patterning coating 110 may exhibit substantial non-uniformity, including without limitation, one of a transition (extending outwardly from a central position) from a minimum thickness to an increased thickness, and a degree of discontinuity, and (as shown) a transition (extending outwardly from a central position) from a maximum thickness to a reduced thickness. The extent of the first portion 101 that does not exhibit such non-uniformity may be identified as a patterning coating non-transition part 101n of the first portion 101. In some non-limiting examples, the patterning coating 110 may form a substantially closed coating 140 in the patterning coating non-transition part 10 In of the first portion 101.

[0271] In some non-limiting examples, the patterning coating transition region 10 It may extend, in the lateral aspect, between the patterning coating non-transition part 10 In of the first portion 101 and the patterning coating edge 615.

[0272] In some non-limiting examples, in plan, the patterning coating transition region 10 It may extend along a perimeter of the patterning coating non-transition part 101n of the first portion 101.

[0273] In some non-limiting examples, a size, in the lateral aspect, of the patterning coating non-transition part 10 In of the first portion 101 may be no more than a size, in the lateral aspect, of the patterning coating transition region 10 It. Those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, a substantially uniform average layer thickness of a given layer, that is, where a size, in the lateral aspect, of a non-transition part thereof may substantially exceed a size, in the lateral aspect, of a transition region adjacent thereto may have applicability in some scenarios involving many of the other layers in a layered semiconductor device 100.

[0274] In some non-limiting examples, the patterning coating transition region 10 It may itself comprise two parts, a patterning coating transition intermediate part 10 li, and a patterning coating transition peripheral part 10 lpof the first portion 101. In some nonlimiting examples, the patterning coating transition intermediate part 101i may extend along a perimeter of the patterning coating non-transition part 10 In. In some non-limiting examples, the patterning coating transition peripheral part 10 lpmay extend along a perimeter of the patterning coating transition intermediate part 10 lp.

[0275] In some non-limiting examples, the perimeter of the patterning coating intermediate part 10 li may correspond to a critical thickness tcof the patterning coating 110. In some non-limiting examples, the critical thickness tcof the patterning coating 110 may correspond to a thickness of a layer of the patterning material 1011, below which at least one particle structure 150pon the patterning coating 110 may tend to form, and above which the layer may be substantially devoid of the at least one particle structure 150pon the patterning coating 110.

[0276] Thus, in the patterning coating transition intermediate part 10 li (and indeed, the patterning coating non-transition part 101n) which is enclosed by the perimeter thereof, an average layer thickness of the patterning coating 110 therein may be at least the critical thickness tc, and, as such, the patterning coating 110 therein may be substantially devoid of the at least one particle structure 150pon the patterning coating 110.

[0277] By contrast, in the patterning coating transition peripheral part 10 lp, which lies outside the perimeter of the patterning coating transition intermediate part 10 li, a thickness of the patterning coating 110 therein is no more than the critical thickness tc, and, as such, at least one particle structure 150pon the patterning coating 110 may tend to form therein.

[0278] In some non-limiting examples, there may be at least one particle structure 150pon the patterning coating 110 (in the patterning coating transition peripheral part 10 li of the first portion 101) substantially adjacent to the at least one particle structure 150BM of the light-absorbing layer 305. In some non-limiting examples, the at least one particle structure 150pon the patterning coating 110 may differ from the at least one particlestructure 150BM of the light-absorbing layer 305 in at least one of: particle size, particle deposited density, and area coverage.

[0279] In terms of particle size, in some non-limiting examples, at least one of a: characteristic size, length, width, diameter, and height, including without limitation, an average thereof, of the at least one particle structure 150BM of the light-absorbing layer 305 in the second portion 102 may be at least that of the at least one particle structure 150pon the patterning coating 110 in the patterning coating transition peripheral part 10 lpof the first portion 101.

[0280] In terms of particle deposited density, in some non-limiting examples, the at least one particle structure 150BM of the light-absorbing layer 305 in the second portion 102 may have a deposited density that is at least that of the at least one particle structure 150pon the patterning coating 110 in the patterning coating transition peripheral part 10 lpof the first portion 101.

[0281] In terms of area coverage, the at least one particle structure 150BM of the light-absorbing layer 305 in the second portion may exhibit an area coverage that is at least that of the at least one particle structure 150pon the patterning coating 110 in the patterning coating transition peripheral part 10 lpin the first portion 101.

[0282] As illustrated in FIG. 6A, in some non-limiting examples, the patterning coating 110 may have an average layer thickness d in the patterning coating non-transition part 10 In of the first portion 101 that may be in a range of one of between about: 1-100, 2- 50, 3-30, 4-20, 5-15, 5-10, and 1-10, nm. In some non-limiting examples, the average layer thickness d of the patterning coating 110 in the patterning coating non-transition part 10 In of the first portion 101 may be substantially the same (constant) thereacross. In some nonlimiting examples, an average layer thickness d of the patterning coating 110 may remain, within the patterning coating non-transition part 10 In, within one of about: 95%, and 90%, of the average layer thickness d of the patterning coating 110.

[0283] In some non-limiting examples, the average layer thickness d may be between about 1-100 nm. In some non-limiting examples, the average layer thickness d may be one of no more than about: 80, 60, 50, 40, 30, 20, 15, and 10, nm. In some non-limiting examples, the average layer thickness d2 of the patterning coating 110 may be one of at least about: 3, 5, and 8, nm.

[0284] In some non-limiting examples, the average layer thickness d.2 of the patterning coating 110 in the patterning coating non-transition part 10 In of the first portion may be no more than about 10 nm. Without wishing to be bound by any particular theory, it has been found, that a non-zero average layer thickness ch of the patterning coating 110 that is no more than about 10 nm may, at least in some non-limiting examples, provide certain advantages for achieving, in some non-limiting examples, enhanced patterning contrast of the at least one particle structure 150BM of the light-absorbing layer 305, relative to a patterning coating 110 having an average layer thickness ch in the patterning coating nontransition part 101n of the first portion 101 of at least about 10 nm.

[0285] In some non-limiting examples, the patterning coating 110 may have a patterning coating thickness that decreases from a maximum to a minimum within the patterning coating transition region 10 It. In some non-limiting examples, the maximum may be proximate to a boundary between the patterning coating transition region 10 It and the patterning coating non-transition part 101n of the first portion 101. In some non-limiting examples, the minimum may be proximate to the patterning coating edge 615. In some non-limiting examples, the maximum may be the average layer thickness ch in the patterning coating non-transition part 101n of the first portion 101. In some non-limiting examples, the maximum may be no more than one of about: 95%, and 90%, of the average layer thickness ch in the patterning coating non-transition part 10 In of the first portion. In some non-limiting examples, the minimum may be in a range of between about 0-0.1 nm.

[0286] In some non-limiting examples, a profile of the patterning coating thickness in the patterning coating transition region 10 It may be sloped. In some non-limiting examples, such profile may be tapered. In some non-limiting examples, the taper may follow one of a: linear, non-linear, parabolic, and exponentially decaying, profile.

[0287] In some non-limiting examples, notwithstanding such profile, a patterning coating thickness in the patterning coating transition peripheral part 10 lpmay be substantially uniform throughout. In some non-limiting examples, the patterning coating thickness in the patterning coating transition peripheral part 10 lpmay be no more than theaverage layer thickness d.2 of the patterning coating non-transition part 101n of the first portion 101.

[0288] With reference once again to FIG. 5A, in any event, the at least one particle structure 150BM and the parts of the supporting dielectric layer 350 on which the at least one particle structure 150BM is disposed thereon, together make up the light-absorbing layer 305.

[0289] In some non-limiting examples, as shown, a covering dielectric layer 571 may be disposed over the exposed layer surface 11 of the device 500a, including without limitation, the at least one particle structure 150BM, the supporting dielectric layer 350, and the patterning coating 110. In some non-limiting examples, the covering dielectric layer 571 may comprise a material in common with that of a first layer of the supporting dielectric layer 350, including without limitation, LiF.

[0290] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500a, including without limitation, the covering dielectric layer 571.

[0291] Turning now to FIG. 5B, there is shown, in a version 500b of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0292] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0293] In some non-limiting examples, as shown, a supporting dielectric layer 350 may be disposed on the exposed layer surface 11 of the second electrode 240 in both the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the non-emissive regions 211 adjacent thereto.

[0294] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 500b.

[0295] In some non-limiting examples, the supporting dielectric layer 350 may act as a (particle structure) patterning coating 110(p> adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon.

[0296] In some non-limiting examples, although not shown, the supporting dielectric layer 350 may comprise a plurality of layers, including without limitation, a first layer, proximate to the second electrode 240, comprising a higher-index material that is one of: adapted to impact, in a substantially poor manner, and not substantially adapted to impact, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, and a second layer, deposited on an exposed layer surface 11 of the first layer, that may act as a (particle structure) patterning coating 110(p) adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the lightabsorbing layer 305, comprised thereof, may be formed thereon. In some non-limiting examples, the first layer may comprise LiF.

[0297] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500b may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0298] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0299] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in thecluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0300] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0301] In some non-limiting examples, the patterning coating 110 may comprise a low index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise both a low index patterning material 1011 and a high index patterning material 1011.

[0302] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0303] In some non-limiting examples, as shown, the at least one particle structure 150BM may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 by exposure of the device 500b, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the supporting dielectric layer 350, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, to a vapor flux 1132 of a deposited material 1131.

[0304] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the supporting dielectric layer 350, the at leastone particle structure 150BM tend(s) to form substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0305] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM of the light-absorbing layer 305.

[0306] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation, proximate to lateral extremities thereof.

[0307] In any event, the at least one particle structure 150BM and the parts of the supporting dielectric layer 350 on which the at least one particle structure 150BM is disposed thereon together make up the light-absorbing layer 305.

[0308] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500b, including without limitation, the at least one particle structure 150BM, the supporting dielectric layer 350, and the patterning coating 110.

[0309] Turning now to FIG. 5C, there is shown, in a version 500cof an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0310] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0311] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s)101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500cmay be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0312] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0313] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0314] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0315] In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011.

[0316] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0317] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500c, including without limitation, the at least one patterning coating 110 in thefirst portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are co-deposited thereon.

[0318] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 500c, with the deposited material 1131 with which the CPL material may be co-deposited (the “codeposited material” 1131) interspersed therein.

[0319] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the second electrode 240, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0320] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0321] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0322] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102 over the second electrode 240 to the extent that it is not covered by the patterning coating 110.

[0323] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to a layer interface between the CPL 510 and the second electrode 240, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach theformation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the second electrode 240 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0324] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350 of FIG. 5A. In some nonlimiting examples, although not shown, the patterning coating 110 and the second electrode 240 may be separated by the deposition of a supporting dielectric layer 350 in a manner similar to that shown in FIG. 5A.

[0325] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0326] In some non-limiting examples, as shown, a covering dielectric layer 571 may be disposed over the exposed layer surface 11 of the device 500c, including without limitation, the at least one particle structure 150BM, and the CPL 510. In some non-limiting examples, the covering dielectric layer 571 may comprise LiF.

[0327] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500c, including without limitation, the covering dielectric layer 571.

[0328] Turning now to FIG. 5D, there is shown, in a version 500d of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0329] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0330] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500d may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0331] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0332] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0333] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0334] In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011.

[0335] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0336] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500d, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are co-deposited thereon.

[0337] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 500d, with the deposited material 1131 with which the CPL material may be co-deposited (the “codeposited material” 1131) interspersed therein.

[0338] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the second electrode 240, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0339] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0340] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0341] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in thesecond portion 102 over the second electrode 240 to the extent that it is not covered by the patterning coating 110.

[0342] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to a layer interface between the CPL 510 and the second electrode 240, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the second electrode 240 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0343] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350 of FIG. 5B. In some nonlimiting examples, although not shown, the patterning coating 110 and the second electrode 240 may be separated by the deposition of a supporting dielectric layer 350 in a manner similar to that shown in FIG. 5B.

[0344] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0345] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500d, including without limitation, the at least one particle structure 150BM, and the CPL 510.

[0346] Turning now to FIG. 5E, there is shown, in a version 500eof an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0347] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0348] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500emay be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0349] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0350] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0351] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0352] In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011.

[0353] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0354] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500e, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that an auxiliary electrode 550 may be formed on the exposed layer surface 11 of the second electrode 240.

[0355] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the second electrode 240, the auxiliary electrode(s) 550 tend(s) to form substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0356] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the auxiliary electrode(s) 550.

[0357] In some non-limiting examples, the auxiliary electrode 550 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the auxiliary electrode 550, including without limitation, using a polarizer. In some non-limiting examples, where the auxiliary electrode 550 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of the auxiliary electrode 550. In some non-limiting examples, there may be a call to cover the auxiliary electrode 550 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0358] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500e, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one auxiliary electrode 550, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are co-deposited thereon.

[0359] In some non-limiting examples, the deposited material 1131 with which the CPL material may be co-deposited (the “co-deposited material” 1131) may be one of: the same as, and different from, the deposited material 1131 of which the auxiliary electrode 550 may be comprised.

[0360] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 500e, with the codeposited material 1131 interspersed therein.

[0361] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the auxiliary electrode 550, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed, and in which the auxiliary electrode 550 has been disposed.

[0362] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0363] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0364] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102 over the auxiliary electrode 550.

[0365] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to a layer interface between the CPL 510 and the auxiliary electrode 550, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the auxiliary electrode 550 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0366] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350 of FIG. 5A. In some nonlimiting examples, although not shown, the patterning coating 110 and the second electrode 240 may be separated by the deposition of a supporting dielectric layer 350 in a manner similar to that shown in FIG. 5A.

[0367] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0368] In some non-limiting examples, as shown, a covering dielectric layer 571 may be disposed over the exposed layer surface 11 of the device 500e, including without limitation, the at least one particle structure 150BM, and the CPL 510. In some non-limiting examples, the covering dielectric layer 571 may comprise LiF.

[0369] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500e, including without limitation, the covering dielectric layer 571.

[0370] Turning now to FIG. 5F, there is shown, in a version 500f of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0371] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0372] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500f may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0373] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0374] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0375] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with thenon-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0376] In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011.

[0377] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0378] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500f, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that an auxiliary electrode 550 may be formed on the exposed layer surface 11 of the second electrode 240.

[0379] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the second electrode 240, the auxiliary electrode(s) 550 tend(s) to form substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0380] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the auxiliary electrode(s) 550.

[0381] In some non-limiting examples, the auxiliary electrode 550 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the auxiliary electrode 550, including without limitation, using a polarizer. In some non-limiting examples, where the auxiliary electrode 550 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of theauxiliary electrode 550. In some non-limiting examples, there may be a call to cover the auxiliary electrode 550 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0382] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500f, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one auxiliary electrode 550 in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are co-deposited thereon.

[0383] In some non-limiting examples, the deposited material 1131 with which the CPL material may be co-deposited (the “co-deposited material” 1131) may be one of: the same as, and different from, the deposited material 1131 of which the auxiliary electrode 550 may be comprised.

[0384] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 500f, with the codeposited material 1131 interspersed therein.

[0385] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the auxiliary electrode 550, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed, and in which the auxiliary electrode 550 has been disposed.

[0386] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0387] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0388] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM over the auxiliary electrode 550.

[0389] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to the layer interface between the CPL 510 and the auxiliary electrode 550, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the auxiliary electrode 550 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0390] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350 of FIG. 5B. In some nonlimiting examples, although not shown, the patterning coating 110 and the second electrode 240 may be separated by the deposition of a supporting dielectric layer 350 in a manner similar to that shown in FIG. 5B.

[0391] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0392] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500f, including without limitation, the at least one particle structure 150BM, and the CPL 510.

[0393] Turning now to FIG. 5G, there is shown, in a version 500gof an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0394] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0395] In some non-limiting examples, as shown, a supporting dielectric layer 350 may be disposed on the exposed layer surface 11 of the second electrode 240 in both the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the non-emissive regions 211 adjacent thereto.

[0396] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 500g.

[0397] In some non-limiting examples, the supporting dielectric layer 350 may act as a patterning coating 110 adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon.

[0398] In some non-limiting examples, the supporting dielectric layer 350 may comprise a plurality of layers, including without limitation, a first layer, proximate to the second electrode 240, comprising a higher-index material that is one of: adapted to impact, in a substantially poor manner, and not substantially adapted to impact, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, and a second layer, deposited on an exposed layer surface 11 of the first layer, that may act as a patterning coating 110 adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon. In some non-limiting examples, the first layer may comprise LiF.

[0399] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the firstportion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500gmay be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0400] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0401] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0402] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0403] In some non-limiting examples, the patterning coating 110 may comprise a low index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise both a low index patterning material 1011 and a high index patterning material 1011.

[0404] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0405] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500g, including without limitation, the patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that an auxiliary electrode 550 may be formed on the exposed layer surface 11 of the second electrode 240.

[0406] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the supporting dielectric layer 350, the auxiliary electrode(s) 550 tend(s) to form only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0407] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the auxiliary electrode(s) 550.

[0408] In some non-limiting examples, the auxiliary electrode 550 formed thereby may be different in function from an auxiliary electrode 1550 (FIG. 15) that is electrically coupled with the second electrode 240, as described herein, for purposes of reducing a sheet resistance thereof. Rather, in some non-limiting examples, such auxiliary electrode 550 may be substantially electrically isolated from the second electrode 240, by at least one dielectric layer, including without limitation, the supporting dielectric layer 350. In some non-limiting examples, such auxiliary electrode 550 may have application in some scenarios, including without limitation, at least one of: touch sensing, and as an antenna.

[0409] In some non-limiting examples, the auxiliary electrode 550 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the auxiliary electrode 550, including without limitation, using a polarizer. In some non-limiting examples, where the auxiliary electrode 550 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of theauxiliary electrode 550. In some non-limiting examples, there may be a call to cover the auxiliary electrode 550 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0410] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500g, including without limitation, the patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one auxiliary electrode 550 in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are co-deposited thereon.

[0411] In some non-limiting examples, the deposited material 1131 with which the CPL material may be co-deposited (the “co-deposited material” 1131) may be one of: the same as, and different from, the deposited material 1131 of which the auxiliary electrode 550 may be comprised.

[0412] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 500g, with the codeposited material 1131 interspersed therein.

[0413] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the auxiliary electrode 550, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed, and in which the auxiliary electrode 550 has been disposed.

[0414] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0415] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0416] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102 over the auxiliary electrode 550.

[0417] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to the layer interface between the CPL 510 and the auxiliary electrode 550, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the auxiliary electrode 550 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0418] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350.

[0419] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0420] In some non-limiting examples, as shown, a covering dielectric layer 571 may be disposed over the exposed layer surface 11 of the device 500g, including without limitation, the at least one particle structure 150BM, and the CPL 510. In some non-limiting examples, the covering dielectric layer 571 may comprise a material in common with that of a first layer of the supporting dielectric layer 350, including without limitation, LiF.

[0421] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500g, including without limitation, the covering dielectric layer 571.

[0422] Turning now to FIG. 5H, there is shown, in a version 500h of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210,including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0423] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0424] In some non-limiting examples, as shown, a supporting dielectric layer 350 may be disposed on the exposed layer surface 11 of the second electrode 240 in both the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the non-emissive regions 211 adjacent thereto.

[0425] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 500h.

[0426] In some non-limiting examples, the supporting dielectric layer 350 may act as a patterning coating 110 adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon.

[0427] In some non-limiting examples, the supporting dielectric layer 350 may comprise a plurality of layers, including without limitation, a first layer, proximate to the second electrode 240, comprising a higher-index material that is one of: adapted to impact, in a substantially poor manner, and not substantially adapted to impact, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, and a second layer, deposited on an exposed layer surface 11 of the first layer, that may act as a patterning coating 110 adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon. In some non-limiting examples, the first layer may comprise LiF.

[0428] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500h may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0429] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0430] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0431] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0432] In some non-limiting examples, the patterning coating 110 may comprise a low index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise both a low index patterning material 1011 and a high index patterning material 1011.

[0433] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0434] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500h, including without limitation, the patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that an auxiliary electrode 550 may be formed on the exposed layer surface 11 of the second electrode 240.

[0435] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the supporting dielectric layer 350, the auxiliary electrode(s) 550 tend(s) to form only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0436] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the auxiliary electrode(s) 550.

[0437] In some non-limiting examples, the auxiliary electrode 550 formed thereby may be different in function from an auxiliary electrode 1550 that is electrically coupled with the second electrode 240, as described herein, for purposes of reducing a sheet resistance thereof. Rather, in some non-limiting examples, such auxiliary electrode 550 is substantially electrically isolated from the second electrode 240, by at least one dielectric layer, including without limitation, the supporting dielectric layer 350. In some nonlimiting examples, the auxiliary electrode 550 may have application in some scenarios, including without limitation, at least one of: touch sensing, and as an antenna.

[0438] In some non-limiting examples, the auxiliary electrode 550 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the auxiliary electrode 550, including without limitation, using a polarizer. In some non-limiting examples, where the auxiliaryelectrode 550 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of the auxiliary electrode 550. In some non-limiting examples, there may be a call to cover the auxiliary electrode 550 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0439] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500h, including without limitation, the patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one auxiliary electrode 550 in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are co-deposited thereon.

[0440] In some non-limiting examples, the deposited material 1131 with which the CPL material may be co-deposited (the “co-deposited material” 1131) may be one of: the same as, and different from, the deposited material 1131 of which the auxiliary electrode 550 may be comprised.

[0441] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 500h, with the codeposited material 1131 interspersed therein.

[0442] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the auxiliary electrode 550, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed, and in which the auxiliary electrode 550 has been disposed.

[0443] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0444] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0445] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102 over the auxiliary electrode 550.

[0446] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to the layer interface between the CPL 510 and the auxiliary electrode 550, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the auxiliary electrode 550 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0447] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350.

[0448] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0449] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500h, including without limitation, the at least one particle structure 150BM, and the CPL 510.

[0450] Turning now to FIG. 51, there is shown, in a version 500i of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0451] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0452] In some non-limiting examples, as shown, a supporting dielectric layer 350 may be disposed on the exposed layer surface 11 of the second electrode 240 in both the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the non-emissive regions 211 adjacent thereto.

[0453] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 500i.

[0454] In some non-limiting examples, as shown, a covering dielectric layer 571 may be disposed over the exposed layer surface 11 of the device 500i, including without limitation, the supporting dielectric layer 350. In some non-limiting examples, the covering dielectric layer 571 may comprise a material in common with that of a first layer of the supporting dielectric layer 350, including without limitation, LiF.

[0455] In some non-limiting examples, as shown, a patterning coating 110 may be disposed on the exposed layer surface 11 of the covering dielectric layer 571 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500i may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0456] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0457] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the patterning coating 110 may be disposed on the exposed layer surface 11 of the covering dielectric layer 571 in the first portion(s) 101that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non- emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the nonlimiting arrangement shown in FIG. 4B.

[0458] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the patterning coating 110 is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non-emissive regions 211 other than adjacent to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0459] In some non-limiting examples, the patterning coating 110 may comprise a low index patterning material 1011.

[0460] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0461] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500i, including without limitation, the patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that an auxiliary electrode 550 may be formed on the exposed layer surface 11 of the second electrode 240.

[0462] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the covering dielectric layer 571, the auxiliary electrode(s) 550 tend(s) to form only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0463] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the auxiliary electrode(s) 550.

[0464] In some non-limiting examples, the auxiliary electrode 550 formed thereby may be different in function from an auxiliary electrode 1550 that is electrically coupled with the second electrode 240 as described herein for purposes of reducing a sheet resistance thereof. Rather, such auxiliary electrode 550 is substantially electrically isolated from the second electrode 240 by at least one dielectric layer, including without limitation, the supporting dielectric layer 350, and the covering dielectric layer 571. In some nonlimiting examples, the auxiliary electrode 550 may have application in some scenarios, including without limitation, at least one of: touch sensing, and as an antenna.

[0465] In some non-limiting examples, the auxiliary electrode 550 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the auxiliary electrode 550, including without limitation, using a polarizer. In some non-limiting examples, where the auxiliary electrode 550 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of the auxiliary electrode 550. In some non-limiting examples, there may be a call to cover the auxiliary electrode 550 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0466] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500i, including without limitation, the patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one auxiliary electrode 550 in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are co-deposited thereon.

[0467] In some non-limiting examples, the deposited material 1131 with which the CPL material may be co-deposited (the “co-deposited material” 1131) may be one of: thesame as, and different from, the deposited material 1131 of which the auxiliary electrode 550 may be comprised.

[0468] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 500i, with the codeposited material 1131 interspersed therein.

[0469] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the auxiliary electrode 550, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed, and in which the auxiliary electrode 550 has been disposed.

[0470] Accordingly, in some non-limiting examples, as shown, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0471] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0472] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102 over the auxiliary electrode 550.

[0473] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to the layer interface between the CPL 510 and the auxiliary electrode 550, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the auxiliary electrode 550 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the atleast one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0474] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350.

[0475] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0476] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500i, including without limitation, the at least one particle structure 150BM, and the CPL 510.

[0477] Turning now to FIG. 5J, there is shown, in a version 500j of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0478] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0479] In some non-limiting examples, as shown, a first patterning coating 1101 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500j may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0480] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0481] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the first patterning coating 11 Or may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the non-limiting arrangement shown in FIG. 4B.

[0482] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the first patterning coating 11 Or is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non- emissive regions 211 other than adjacent to the emissive regions 210 of each of the subpixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some nonlimiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0483] In some non-limiting examples, the first patterning coating 1101 may comprise a high index patterning material 1011.

[0484] The first patterning coating 1101 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0485] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500j, including without limitation, the at least one first patterning coating 1101 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material1131 such that an auxiliary electrode 550 may be formed on the exposed layer surface 11 of the second electrode 240.

[0486] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the first patterning coating 11 Or relative to the exposed layer surface 11 of the second electrode 240, the auxiliary electrode(s) 550 tend(s) to form only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the first patterning coating 1101 has been disposed.

[0487] Accordingly, in some non-limiting examples, as shown, the first patterning coating 1101 in the first portion 101 may be substantially devoid of the auxiliary electrode(s) 550.

[0488] In some non-limiting examples, the auxiliary electrode 550 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the auxiliary electrode 550, including without limitation, using a polarizer. In some non-limiting examples, where the auxiliary electrode 550 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of the auxiliary electrode 550. In some non-limiting examples, there may be a call to cover the auxiliary electrode 550 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0489] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500j, including without limitation, the first patterning coating 11 Or in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one auxiliary electrode 550, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a dielectric material such that the dielectric material may be deposited thereon.

[0490] In some non-limiting examples, as shown, the vapor flux 1132 of the dielectric material tends to form a supporting dielectric layer 350 across the lateral extent of the device 500j.

[0491] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 500j.

[0492] In some non-limiting examples, the supporting dielectric layer 350 may act as a (particle structure) patterning coating 110(p> adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon.

[0493] In some non-limiting examples, although not shown, the supporting dielectric layer 350 may comprise a plurality of layers, including without limitation, a first layer, proximate to the second electrode 240, comprising a higher-index material that is one of: adapted to impact, in a substantially poor manner, and not substantially adapted to impact, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, and a second layer, deposited on an exposed layer surface 11 of the first layer, that may act as a (particle structure) patterning coating 110(p) adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the lightabsorbing layer 305, comprised thereof, may be formed thereon. In some non-limiting examples, the first layer may comprise LiF.

[0494] In some non-limiting examples, as shown, a second patterning coating 1 IO2 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the subpixels 216. As such, the device 500j may be seen to substantially correspond to the nonlimiting arrangement shown in FIG. 4A. In some non-limiting examples, respective first patterning coatings 1101 and second patterning coatings 1 IO2 may be substantially longitudinally aligned.

[0495] In some non-limiting examples, the second patterning coating 1 IO2 may comprise a high index patterning material 1011.

[0496] The second patterning coating 1 IO2 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0497] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500j, including without limitation, the second patterning coating 1 IO2 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the supporting dielectric layer 350, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a dielectric material and a deposited material 1131 such that the dielectric material and the deposited material 1131 are co-deposited thereon.

[0498] In some non-limiting examples, the deposited material 1131 with which the dielectric material may be co-deposited (the “co-deposited material” 1131) may be one of: the same as, and different from, the deposited material 1131 of which the auxiliary electrode 550 may be comprised.

[0499] In some non-limiting examples, as shown, the vapor flux 1132 of the dielectric material tends to form a covering dielectric layer 571 across the lateral extent of the device 500j, with the co-deposited material 1131 interspersed therein.

[0500] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the second patterning coating 1 IO2 relative to the exposed layer surface 11 of the supporting dielectric layer 350, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the covering dielectric layer 571, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the second patterning coating 1 IO2 has been disposed, and in which the supporting dielectric layer 350 has been disposed.

[0501] In some non-limiting examples, the covering dielectric layer 571 may comprise a material in common with that of a first layer of the supporting dielectric layer 350, including without limitation, LiF.

[0502] Accordingly, in some non-limiting examples, as shown, the second patterning coating 1 IO2 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0503] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0504] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102 over the supporting dielectric layer 350.

[0505] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to the layer interface between the covering dielectric layer 571 and the supporting dielectric layer 350, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the supporting dielectric layer 350 increases, an increased presence of the covering dielectric layer 571 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0506] Those having ordinary skill in the relevant art will appreciate that the covering dielectric layer 571, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350.

[0507] In any event, the at least one particle structure 150BM, the covering dielectric layer 571 within which the at least one particle structure 150BM may be interspersed, and the parts of the supporting dielectric layer 350, on which the at least one particle structure 150BM is disposed thereon, together make up the light-absorbing layer 305.

[0508] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 500j, including without limitation, the covering dielectric layer 571.

[0509] Turning now to FIG. 5K, there is shown, in a version 500k of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality ofsub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0510] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0511] In some non-limiting examples, as shown, a first patterning coating 1101 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 500k may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0512] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0513] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the first patterning coating 11 Or may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the non-limiting arrangement shown in FIG. 4B.

[0514] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the first patterning coating 11 Or is disposed in a pattern that substantially corresponds to the non-limiting arrangement shown in FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non- emissive regions 211 other than adjacent to the emissive regions 210 of each of the subpixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415,together with the non-emissive regions 211 extending therebetween, and in some nonlimiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0515] In some non-limiting examples, the first patterning coating 1101 may comprise a high index patterning material 1011.

[0516] The first patterning coating 1101 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0517] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500k, including without limitation, the at least one first patterning coating 1101 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that an auxiliary electrode 550 may be formed on the exposed layer surface 11 of the second electrode 240.

[0518] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the first patterning coating 1101 relative to the exposed layer surface 11 of the second electrode 240, the auxiliary electrode(s) 550 tend(s) to form only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the first patterning coating 1101 has been disposed.

[0519] Accordingly, in some non-limiting examples, as shown, the first patterning coating 1101 in the first portion 101 may be substantially devoid of the auxiliary electrode(s) 550.

[0520] In some non-limiting examples, the auxiliary electrode 550 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the auxiliary electrode 550, including without limitation, using a polarizer. In some non-limiting examples, where the auxiliary electrode 550 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, insome non-limiting examples, such measures may not substantially reduce reflectivity of the auxiliary electrode 550. In some non-limiting examples, there may be a call to cover the auxiliary electrode 550 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0521] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500k, including without limitation, the first patterning coating 11 Or in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one auxiliary electrode 550, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a dielectric material such that the dielectric material may be deposited thereon.

[0522] In some non-limiting examples, as shown, the vapor flux 1132 of the dielectric material tends to form a supporting dielectric layer 350 across the lateral extent of the device 500k.

[0523] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 500k.

[0524] In some non-limiting examples, the supporting dielectric layer 350 may act as a (particle structure) patterning coating 110(p> adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon.

[0525] In some non-limiting examples, although not shown, the supporting dielectric layer 350 may comprise a plurality of layers, including without limitation, a first layer, proximate to the second electrode 240, comprising a higher-index material that is one of: adapted to impact, in a substantially poor manner, and not substantially adapted to impact, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, and a second layer, deposited on an exposed layer surface 11 of the first layer, that may act as a (particle structure) patterning coating 110(p> adapted to impact, in a substantially poor manner, a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that the at least one particle structure 150BM, of the light-absorbing layer 305, comprised thereof, may be formed thereon. In some non-limiting examples, the first layer may comprise LiF.

[0526] In some non-limiting examples, as shown, a second patterning coating 1 IO2 may be disposed on the exposed layer surface 11 of the supporting dielectric layer 350 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the subpixels 216. As such, the device 500j may be seen to substantially correspond to the nonlimiting arrangement shown in FIG. 4A. In some non-limiting examples, respective first patterning coatings 1101 and second patterning coatings 1 IO2 may be substantially longitudinally aligned.

[0527] In some non-limiting examples, the second patterning coating 1 IO2 may comprise a high index patterning material 1011.

[0528] The second patterning coating 1 IO2 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0529] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 500k, including without limitation, the second patterning coating 1 IO2 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the supporting dielectric layer 350, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a TFE material and a deposited material 1131 such that the TFE material and the deposited material 1131 are co-deposited thereon.

[0530] In some non-limiting examples, the deposited material 1131 with which the dielectric material may be co-deposited (the “co-deposited material” 1131) may be one of: the same as, and different from, the deposited material 1131 of which the auxiliary electrode 550 may be comprised.

[0531] In some non-limiting examples, as shown, the vapor flux 1132 of the TFE material tends to form a TFE layer 572 across the lateral extent of the device 500k, with the co-deposited material 1131 interspersed therein.

[0532] However, as shown, because of the reduced propensity of a vapor flux 1132 of a co-deposited material 1131 to be condensed on the exposed layer surface 11 of the second patterning coating 1 IO2 relative to the exposed layer surface 11 of the supporting dielectric layer 350, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the TFE layer 572, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the second patterning coating 1 IO2 has been disposed, and in which the supporting dielectric layer 350 has been disposed.

[0533] Accordingly, in some non-limiting examples, as shown, the second patterning coating 1 IO2 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0534] Although not shown, in some non-limiting examples, some isolated particle structures 150 (denoted 150p) may tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0535] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102.

[0536] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to the layer interface between the TFE layer 572 and the auxiliary electrode 550, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the auxiliary electrode 550 increases, an increased presence of the TFE layer 572 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0537] In any event, the at least one particle structure 150BM, the TFE layer 572 within which the at least one particle structure 150BM may be interspersed, and the parts of the supporting dielectric layer 350 on which the at least one particle structure 150BM is disposed thereon together make up the light-absorbing layer 305.

[0538] Turning now to FIG. 5L, there is shown, in a version 5001 of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0539] In some non-limiting examples, as shown, at least one of: the at least one semiconducting layer 230, and the second electrode 240, may be disposed as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0540] In some non-limiting examples, as shown, a first patterning coating 1101 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels 216. As such, the device 5001 may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0541] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent to the emissive regions 210 of each of the sub -pixels 216.

[0542] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the first patterning coating 1101 may be disposed on the exposed layer surface 11 of the second electrode 240 in the first portion(s) 101 that correspond(s) not only to the emissive regions 210 of each of the sub-pixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, but also to the non-emissive regions 211 extending therebetween, and in some non-limiting examples, parts of non-emissive regions 211 adjacent thereto, so as to substantially correspond to the non-limiting arrangement shown in FIG. 4B.

[0543] Those having ordinary skill in the relevant art will appreciate that, although not shown, wherein, in some non-limiting examples, the first patterning coating 11 Or is disposed in a pattern that substantially corresponds to the non-limiting arrangement shownin FIG. 4B, the second portion(s) 102 correspond(s) to only those (parts of the) non- emissive regions 211 other than adjacent to the emissive regions 210 of each of the subpixels 216 in the cluster 412, including without limitation, corresponding to a pixel 415, together with the non-emissive regions 211 extending therebetween, and in some nonlimiting examples, parts of non-emissive regions 211 adjacent thereto, that make up the first portion(s) 101.

[0544] In some non-limiting examples, the first patterning coating 1101 may comprise a high index patterning material 1011.

[0545] The first patterning coating 1101 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0546] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 5001, including without limitation, the at least one first patterning coating 1101 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the second electrode 240, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that a first auxiliary electrode 550i may be formed on the exposed layer surface 11 of the second electrode 240.

[0547] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the first patterning coating 1101 relative to the exposed layer surface 11 of the second electrode 240, the first auxiliary electrode(s) 550i tend(s) to form only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the first patterning coating 1101 has been disposed.

[0548] Accordingly, in some non-limiting examples, as shown, the first patterning coating 1101 in the first portion 101 may be substantially devoid of the first auxiliary electrode(s) 550i.

[0549] In some non-limiting examples, the first auxiliary electrode 550i may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the first auxiliary electrode 5501,including without limitation, using a polarizer. In some non-limiting examples, where the first auxiliary electrode 550i comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of the first auxiliary electrode 5501. In some non-limiting examples, there may be a call to cover the first auxiliary electrode 550i with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0550] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 5001, including without limitation, the first patterning coating 11 Or in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one first auxiliary electrode 550i, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a dielectric material such that the dielectric material may be deposited thereon.

[0551] In some non-limiting examples, as shown, the vapor flux 1132 of the dielectric material tends to form a supporting dielectric layer 350 across the lateral extent of the device 500i.

[0552] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise, a CPL 510 of the device 5001.

[0553] In some non-limiting examples, as shown, a covering dielectric layer 571 may be disposed over the exposed layer surface 11 of the device 5001, including without limitation, the supporting dielectric layer 350. In some non-limiting examples, the covering dielectric layer 571 may comprise a material in common with that of a first layer of the supporting dielectric layer 350, including without limitation, LiF.

[0554] In some non-limiting examples, the covering dielectric layer 571 may comprise a material in common with that of a first layer of the supporting dielectric layer 350, including without limitation, LiF.

[0555] In some non-limiting examples, as shown, a second patterning coating 1 IO2 may be disposed on the exposed layer surface 11 of the covering dielectric layer 571 in the first portion(s) 101 that correspond(s) to the emissive regions 210 of each of the sub-pixels216. As such, the device 5001 may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A. In some non-limiting examples, respective first patterning coatings 11 Or and second patterning coatings 1 IO2 may be substantially longitudinally aligned.

[0556] In some non-limiting examples, the second patterning coating 1 IO2 may comprise a high index patterning material 1011.

[0557] The second patterning coating 1 IO2 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0558] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 5001, including without limitation, the at least one second patterning coating 1 IO2 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the covering dielectric layer 571, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of a deposited material 1131 such that a second auxiliary electrode 5502 may be formed on the exposed layer surface 11 of the covering dielectric layer 571.

[0559] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the second patterning coating 1 IO2 relative to the exposed layer surface 11 of the covering dielectric layer 571, the second auxiliary electrode(s) 5502 tend(s) to form only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the second patterning coating 1 IO2 has been disposed.

[0560] Accordingly, in some non-limiting examples, as shown, the second patterning coating 1 IO2 in the first portion 101 may be substantially devoid of the second auxiliary electrode(s) 5502.

[0561] In some non-limiting examples, the second auxiliary electrode 5502 formed thereby may be different in function from an auxiliary electrode 1550 that is electrically coupled with the second electrode 240 as described herein for purposes of reducing a sheet resistance thereof. Rather, such second auxiliary electrode 5502 is substantially electricallyisolated from both the first auxiliary electrode 550i and the second electrode 240, by at least one dielectric layer, including without limitation, the supporting dielectric layer 350, and the covering dielectric layer 571. In some non-limiting examples, the second auxiliary electrode 5502 may have application in some scenarios, including without limitation, at least one of: touch sensing, and as an antenna.

[0562] In some non-limiting examples, the second auxiliary electrode 5502 may be substantially reflective. As such, in some non-limiting examples, there may be a call to implement a mechanism to reduce a reflectivity of the second auxiliary electrode 5502, including without limitation, using a polarizer. In some non-limiting examples, where the second auxiliary electrode 5502 comprises Ag, a reflectivity thereof may be achieved by depositing a layer of a metal having reduced reflectivity, including without limitation, Yb, thereon. However, in some non-limiting examples, such measures may not substantially reduce reflectivity of the second auxiliary electrode 5502. In some non-limiting examples, there may be a call to cover the second auxiliary electrode 5502 with an light-absorbing layer 305, including without limitation, as disclosed herein.

[0563] In some non-limiting examples, as shown, the exposed layer surface 11 of the device 5001, including without limitation, the at least one second patterning coating 1 IO2 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the at least one second auxiliary electrode 5502 in the second portion(s) 102 adjacent thereto, may be exposed to a vapor flux 1132 of both a CPL material and a deposited material 1131 such that the CPL material and the deposited material 1131 are codeposited thereon.

[0564] In some non-limiting examples, the deposited material 1131 with which the CPL material may be co-deposited (the “co-deposited material” 1131) may be one of: the same as, and different from, the deposited material 1131 of which at least one of: the first auxiliary electrode 5501, and the second auxiliary electrode 5502, may be comprised.

[0565] In some non-limiting examples, as shown, the vapor flux 1132 of the CPL material tends to form a CPL 510 across the lateral extent of the device 5001, with the codeposited material 1131 interspersed therein.

[0566] However, as shown, because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the second patterning coating 1 IO2 relative to the exposed layer surface 11 of the second auxiliary electrode 5502, the co-deposited material 1131 may tend to form as at least one particle structure 150BM, within the CPL 510, substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the second patterning coating 1101 has been disposed, and in which the second auxiliary electrode 5502 has been disposed.

[0567] Accordingly, in some non-limiting examples, as shown, the second patterning coating 11 Or in the first portion 101 may be substantially devoid of the at least one particle structure 150BM.

[0568] Although not shown, in some non-limiting examples, some isolated particle structures 150pmay tend to form in the first portion 101, including without limitation proximate to lateral extremities thereof.

[0569] In some non-limiting examples, as shown, the co-deposited material 1131 may tend to form as a plurality of layers of at least one particle structure 150BM in the second portion 102 over the second auxiliary electrode 5502.

[0570] Although not shown, in some non-limiting examples, a distributed density of the at least one particle structure 150BM may increase proximate to the layer interface between the CPL 510 and the second auxiliary electrode 5502, in some non-limiting examples, even to the extent that the at least one particle structure 150BM may tend to coalesce and approach the formation of a closed coating 140 thereof. However, as a longitudinal separation between the at least one particle structure 150BM and the second auxiliary electrode 5502 increases, an increased presence of the CPL 510 therebetween to form a matrix for supporting the at least one particle structure 150BM may tend to decrease a distributed density of the at least one particle structure 150BM.

[0571] Those having ordinary skill in the relevant art will appreciate that the CPL 510, within which the at least one particle structure 150BM may be interspersed, may be considered to perform the same function, and in some non-limiting examples, to be substantially the same, as the supporting dielectric layer 350.

[0572] In any event, the at least one particle structure 150BM, and the CPL 510 within which the at least one particle structure 150BM may be interspersed, together make up the light-absorbing layer 305.

[0573] In some non-limiting examples, as shown, a TFE layer 572 may be disposed over the exposed layer surface 11 of the device 5001, including without limitation, the at least one particle structure 150, and the CPL 510.

[0574] Turning now to FIG. 7A, there is shown, in a version 700aof an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0575] In some non-limiting examples, as shown, at least one of the: HIL 231, and HTL 233, may comprise a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween, and define an EML layer bank structure 710 that provides a local depression within the active region 208 of each sub-pixel 216.

[0576] In some non-limiting examples, as shown, within each sub-pixel 216, a colour-specific EML 235 may be disposed, including without limitation, by a(n) (ink-jet) printing operation, on an exposed layer surface 11 of the EML layer bank structure 710. Thus, a R(ed) EML 235R may be provided in the R(ed) sub-pixel 216R, a G(reen) EML 235G may be provided in the G(reen) sub-pixel 216G, and a B(lue) EML 235B may be provided in the B(lue) sub-pixel 216B. In some non-limiting examples, including without limitation, where the EML 235 is provided by a(n) (ink-jet) printing operation, the ink used to form the colour-specific EML 235 may be confined within the active region 208 of each sub-pixel 216 by the corresponding local depression provided by the EML layer bank structure 710 defined by at least one of the: HIL 231, and HTL 233.

[0577] In some non-limiting examples, as shown, at least one of: the ETL 237, the EIL 239, and the second electrode 240, may be disposed as a common layer, over the colour-specific EML 235 (disposed on the exposed layer surface 11 of corresponding EMLbank structures 710 and confined within the active region 208 of each sub-pixel 216 by the corresponding local depression provided by such EML bank structure 710), and across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0578] In some non-limiting examples, at least one of the ETL 237, and the EIL 239, may comprise a plurality of elements including LiF, including without limitation, LiF: metal.

[0579] In some non-limiting examples, as shown, a supporting dielectric layer 350 may be disposed on the exposed layer surface 11 of the second electrode 240 in both the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the non-emissive regions 211 adjacent thereto.

[0580] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise a CPL 510 of the device 700a.

[0581] In some non-limiting examples, as shown, a first covering dielectric layer 571i may be disposed over the exposed layer surface 11 of the device 700a, including without limitation, the supporting dielectric layer 350. In some non-limiting examples, the first covering dielectric layer 5711 may comprise a material in common with that of the supporting dielectric layer 350, including without limitation, LiF.

[0582] In some non-limiting examples, as shown, a first TFE layer 572i may be disposed over the exposed layer surface 11 of the first covering dielectric layer 5711.

[0583] In some non-limiting examples, as shown, at least one of the: ETL 237, EIL 239, second electrode 240, supporting dielectric layer 350, first covering dielectric layer 571i, and first TFE layer 5721, may comprise a common layer and define a patterning coating bank structure 720 that provides a local depression co-located, in the lateral aspect, with the active region 208 of each sub-pixel 216.

[0584] In some non-limiting examples, although not shown, the patterning coating bank structure 720 may comprise an HBL (not shown) between the EML 235 and any other layers of the patterning coating bank structure 720, including without limitation, in a common layer.

[0585] In some non-limiting examples, although not shown, an exposed layer surface 11 of a top-most one of the layers of the patterning coating bank structure 720 (that is, a layer thereof that is farthest away from the substrate 110), may be one of: treated, and have an additional layer deposited thereon, so that at least one of: wetting thereof by the ink of which the patterning coating 110 may be comprised may be reduced, and the exposed layer surface 11 of the top-most one of the layers of the patterning coating bank structure 720 may be protected from being impacted by a solvent of the ink.

[0586] In some non-limiting examples, as shown, within each sub-pixel, a patterning coating 110 may be disposed, including without limitation, by a(n) (ink-jet) printing operation, on the exposed layer surface 11 of the patterning coating bank structure 720. As such, the device 700amay be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0587] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent the emissive regions 210 of each of the sub -pixels 216.

[0588] In some non-limiting examples, including without limitation, where the patterning coating 110 is provided by a(n) (ink-jet) printing operation, the ink used to form the patterning coating 110 may be confined within a region co-located, in the lateral aspect, with the active region 208 of each sub-pixel 216, by the corresponding local depression provided by the patterning coating bank structure 720.

[0589] In some non-limiting examples, the patterning coating 110 may comprise a low index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise both a low index patterning material 1011 and a high index patterning material 1011.

[0590] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0591] In some non-limiting examples, as shown, the at least one particle structure 150BM may be disposed on the exposed layer surface 11 of the patterning coating bank structure 720 by exposure of the device 700a, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and a top-most one of the layers of the patterning coating bank structure 720, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, to a vapor flux 1132 of a deposited material 1131.

[0592] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the top-most one of the layers of the patterning coating bank structure 720, the at least one particle structure 150BM tend(s) to form substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0593] Accordingly, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM of the light-absorbing layer 305.

[0594] Although not shown, in some non-limiting examples, some isolated particle structures 150p, may tend to form in the first portion 101, including without limitation, proximate to lateral extremities thereof.

[0595] In any event, the at least one particle structure 150BM and the parts of at least one of the: supporting dielectric layer 350, the first covering dielectric layer 5711, the first TFE layer 5721, on which the at least one particle structure 150BM is disposed thereon, together make up the light-absorbing layer 305.

[0596] In some non-limiting examples, as shown, a second covering dielectric layer 57h may be disposed over the exposed layer surface 11 of the device 700a, including without limitation, the at least one particle structure 150BM, and a top-most one of the layers of the patterning coating bank structure 720, including without limitation, the first TFE layer 5721, and the patterning coating 110. In some non-limiting examples, the second covering dielectric layer 57h may comprise a material in common with that of at least oneof: the supporting dielectric layer 350, and the first covering dielectric layer 5711, including without limitation, LiF.

[0597] In some non-limiting examples, as shown, a second TFE layer 5722 may be disposed over the exposed layer surface 11 of the device 700a, including without limitation, the second covering dielectric layer 57h.

[0598] Turning now to FIG. 7B, there is shown, in a version 700b of an optoelectronic device 200, a cluster 412 comprising a plurality of emissive regions 210, including without limitation, those corresponding to a pixel 415 comprising a plurality of sub-pixels 216, including without limitation, a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, each comprising a first electrode 220, a second electrode 240, and at least one semiconducting layer 230, including without limitation, an HIL 231, an HTL 233, an EML 235, an ETL 237, and an EIL 239.

[0599] In some non-limiting examples, as shown, at least one of the: HIL 231, and HTL 233, may comprise a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween, and define an EML layer bank structure 710 that provides a local depression within the active region 208 of each sub-pixel 216.

[0600] In some non-limiting examples, as shown, within each sub-pixel 216, a colour-specific EML 235 may be disposed, including without limitation, by a(n) (ink-jet) printing operation, on an exposed layer surface 11 of the EML layer bank structure 710. Thus, a R(ed) EML 235R may be provided in the R(ed) sub-pixel 216R, a G(reen) EML 235G may be provided in the G(reen) sub-pixel 216G, and a B(lue) EML 235B may be provided in the B(lue) sub-pixel 216B. In some non-limiting examples, including without limitation, where the EML 235 is provided by a(n) (ink-jet) printing operation, the ink used to form the colour-specific EML 235 may be confined within the active region 208 of each sub-pixel 216 by the corresponding local depression provided by the EML layer bank structure 710 defined by at least one of the: HIL 231, and HTL 233.

[0601] In some non-limiting examples, as shown, at least one of: the ETL 237, the EIL 239, and the second electrode 240, may be disposed as a common layer, over the colour-specific EML 235 (disposed on the exposed layer surface 11 of corresponding EML bank structures 710 and confined within the active region 208 of each sub-pixel 216 by thecorresponding local depression provided by such EML bank structure 710), and across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0602] In some non-limiting examples, at least one of: the ETL 237, and the EIL 239, may comprise a plurality of elements including LiF, including without limitation, LiF: metal.

[0603] In some non-limiting examples, as shown, a supporting dielectric layer 350 may be disposed on the exposed layer surface 11 of the second electrode 240 in both the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and the non-emissive regions 211 adjacent thereto.

[0604] In some non-limiting examples, the supporting dielectric layer 350 may act as, and in some non-limiting examples, comprise a CPL 510 of the device 700b.

[0605] In some non-limiting examples, as shown, a first covering dielectric layer 571i may be disposed over the exposed layer surface 11 of the device 700b, including without limitation, the supporting dielectric layer 350. In some non-limiting examples, the first covering dielectric layer 5711 may comprise a material in common with that of the supporting dielectric layer 350, including without limitation, LiF.

[0606] In some non-limiting examples, as shown, a first TFE layer 572i may be disposed over the exposed layer surface 11 of the first covering dielectric layer 5711.

[0607] In some non-limiting examples, as shown, a seed layer 780 may be disposed over the exposed layer surface 11 of the first TFE layer 572i as a common layer across the plurality of emissive regions 210, and the non-emissive regions 211 therebetween.

[0608] In some non-limiting examples, the seed layer 780 may be adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, but not to an extent that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131. In some non-limiting examples, the seed layer 780 may comprise a substantially thin layer, including without limitation, on the order of no more than a few angstroms in thickness, of a material that has a substantially high initial sticking probability against the deposition of a deposited material 1131 that is a metal. In some non-limitingexamples, the seed layer 780 may comprise a layer of a material may serve as a substantially weak patterning coating 110.

[0609] In some non-limiting examples, as shown, at least one of the: ETL 237, EIL 239, second electrode 240, supporting dielectric layer 350, first covering dielectric layer 571i, first TFE layer 5721, and the seed layer 780, may comprise a common layer and define a patterning coating bank structure 720 that provides a local depression co-located, in the lateral aspect, with the active region 208 of each sub-pixel 216.

[0610] In some non-limiting examples, although not shown, the patterning coating bank structure 720 may comprise an HBL (not shown) between the EML 235 and any other layers of the patterning coating bank structure 720, including without limitation, in a common layer.

[0611] In some non-limiting examples, although not shown, an exposed layer surface 11 of a top-most one of the layers of the patterning coating bank structure 720 (that is, a layer thereof that is farthest away from the substrate 110), may be one of: treated, and have an additional layer deposited thereon, so that at least one of: wetting thereof by the ink of which the patterning coating 110 may be comprised may be reduced, and the exposed layer surface 11 of the top-most one of the layers of the patterning coating bank structure 720 may be protected from being impacted by a solvent of the ink.

[0612] In some non-limiting examples, as shown, within each sub-pixel, a patterning coating 110 may be disposed, including without limitation, by an(n) (ink-jet) printing operation, on the exposed layer surface 11 of the patterning coating bank structure 720. As such, the device 700b may be seen to substantially correspond to the non-limiting arrangement shown in FIG. 4A.

[0613] In some non-limiting examples, as shown, the second portion(s) 102 correspond(s) to the non-emissive regions 211 adjacent the emissive regions 210 of the each of the sub -pixels 216.

[0614] In some non-limiting examples, including without limitation, where the patterning coating 110 is provided by a(n) (ink-jet) printing operation, the ink used to form the patterning coating 110 may be confined within a region co-located, in the lateral aspect,with the active region 208 of each sub-pixel 216, by the corresponding local depression provided by the patterning coating bank structure 720.

[0615] In some non-limiting examples, the patterning coating 110 may comprise a low index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise a high index patterning material 1011. In some non-limiting examples, the patterning coating 110 may comprise both a low index patterning material 1011 and a high index patterning material 1011.

[0616] The patterning coating 110 is adapted to impact a propensity of a vapor flux 1132 of a deposited material 1131 to be condensed thereon, such that an exposed layer surface 11 thereof may be substantially devoid of the deposited material 1131.

[0617] In some non-limiting examples, as shown, the at least one particle structure 150BM may be disposed on the exposed layer surface 11 of the patterning coating bank structure 720 by exposure of the device 700b, including without limitation, the at least one patterning coating 110 in the first portion 101 corresponding to the emissive regions 210 of each of the sub-pixels 216, and a top-most one of the layers of the patterning coating bank structure 720, to the extent that it is not covered thereby, in the second portion(s) 102 adjacent thereto, to a vapor flux 1132 of a deposited material 1131.

[0618] Because of the reduced propensity of a vapor flux 1132 of a deposited material 1131 to be condensed on the exposed layer surface 11 of the patterning coating 110 relative to the exposed layer surface 11 of the top-most one of the layers of the patterning coating bank structure 720, the at least one particle structure 150BM tend(s) to form substantially only in the second portion(s) 102 adjacent to the first portion(s) 101 within which the patterning coating 110 has been disposed.

[0619] Accordingly, the patterning coating 110 in the first portion 101 may be substantially devoid of the at least one particle structure 150BM of the light-absorbing layer 305.

[0620] Although not shown, in some non-limiting examples, some isolated particle structures 150 (denoted 150p), may tend to form in the first portion 101, including without limitation, proximate to lateral extremities thereof.

[0621] In any event, the at least one particle structure 150BM and the parts of at least one of the: seed layer 780, supporting dielectric layer 350, the first covering dielectric layer 571i, the first TFE layer 5721, on which the at least one particle structure 150BM is disposed thereon, together make up the light-absorbing layer 305.

[0622] In some non-limiting examples, as shown, a second covering dielectric layer 57h may be disposed over the exposed layer surface 11 of the device 700b, including without limitation, the at least one particle structure 150BM, and a top-most one of the layers of the patterning coating bank structure 720, including without limitation, the seed layer 780, and the patterning coating 110. In some non-limiting examples, the second covering dielectric layer 57h may comprise a material in common with that of at least one of: the supporting dielectric layer 350, and the first covering dielectric layer 5711, including without limitation, LiF.

[0623] In some non-limiting examples, as shown, a second TFE layer 5722 may be disposed over the exposed layer surface 11 of the device 700b, including without limitation, the second covering dielectric layer 57h.Experimental Data

[0624] A series of experiments was designed to investigate the impact on absorption, as a function of wavelength, of a first set of samples, each comprising an lightabsorbing layer 305, comprising at least one particle structure 150BM, comprised of a deposited material 1131, comprising Yb patterned thereon using a patterning coating 110.

[0625] Each of the first set of samples comprised a first electrode 220, comprising Ag, in some non-limiting examples, deposited to an average layer thickness of substantially about 50.0 nm, on which was deposited a patterning coating 110. Thereafter, the sample was exposed to a vapour flux 1132 of a deposited material 1131, comprising Yb, in order to form an light-absorbing layer 305, comprising at least one particle structure 150BM.

[0626] A first sample, designated structure A 810, comprised a first patterning coating 110 that provides a substantially mid-level of deposition (patterning) contrast, to an average layer depth of substantially about 30.0 nm, and the sample was thereafter exposed to a vapour flux 1132 of a deposited material 1131, comprising Yb, to an average layerIlldepth of substantially about 56.8 nm. SEM images of the resulting light-absorbing layer 305 are shown at varying magnifications in FIG. 8A. As may be seen, the light-absorbing layer 305 may be seen to comprise at least one substantially large particle structure 150BM, with substantial space therebetween, so that each particle structure 150BM is substantially discrete.

[0627] A second sample, designated Structure B 820, comprised a second patterning coating 110 that provides a substantially poor level of deposition (patterning) contrast, to an average layer depth of substantially about 30.0 nm, and the sample was thereafter exposed to a vapour flux 1132 of a deposited material 1131, comprising Yb, to an average layer depth of substantially about 56.8 nm. SEM images of the resulting light-absorbing layer 305 are shown at varying magnifications in FIG. 8B. As may be seen, the light-absorbing layer 305 may be seen to comprise at least one substantially large particle structure 150BM, without any substantially space therebetween, such that it tends to coalesce toward forming a substantially closed coating 140.

[0628] FIG. 8C is a graph of absorption, expressed as a percentage, as a function of wavelength, for each of the samples 810, 820 shown in FIGs. 8A-8B. As may be seen, the light-absorbing layer 305 of the Structure A sample 810 exhibited absorption that is at least that of the Structure B sample 820 across the entire wavelength range.

[0629] Thus, it may be seen that the creation of an light-absorbing layer 305, having discrete and substantially spaced-apart particle structures 150BM, may exhibit substantially good absorption. Further, it may be postulated that at least one of: the size of, and the spacing of, particle structures 150BM, may correlate positively with the absorption exhibited.

[0630] A series of experiments was designed to investigate the impact on absorption, as a function of wavelength, of a second set of samples, each comprising an light-absorbing layer 305, comprising at least one particle structure 150BM, comprised of a deposited material 1131, comprising Yb patterned thereon using a patterning coating 110.

[0631] Each of the second set of samples comprised at least one semiconducting layer 230, comprising a first electrode 220, comprising Ag, deposited to an average layer depth of substantially about 80.0 nm, at least one semiconducting layer 230 comprising a hole transport material (HTM), deposited to an average layer depth of substantially about170.0 nm, with a second electrode 240, comprising an initial layer of Mg:Ag in a 1 : 10 ratio, deposited to an average layer depth of substantially about 10.0 nm, on which was deposited the first patterning coating 110 used in the Structure A sample 810, but to an average layer depth of substantially about 15.0 nm. Thereafter, the sample was exposed to a vapour flux 1132 of a deposited material 1131 comprising Yb, to an average layer depth of substantially about 70.0 nm.

[0632] In a first sample, designated Structure C 830, the light-absorbing layer 305 has deposited thereon, a covering layer 170, comprising an HTM, to an average layer depth of substantially about 50 nm.

[0633] In a second sample, designated Structure D 840, the light-absorbing layer 305 has deposited thereon, a covering layer 170, comprising LiF, to an average layer depth of substantially about 50.0 nm.

[0634] FIG. 8D is a graph of absorption, expressed as a percentage, as a function of wavelength, for each of the samples 830, 840 in the second set described herein. As may be seen, each of the samples exhibit a local minimum in absorption around about 450 nm. At wavelengths above about 450 nm, the absorption exhibited by the Structure D sample 840 is at least that of the Structure C sample 830.

[0635] FIG. 8E is a photograph of the Structure D sample 840. As may be seen, the light-absorbing layer 305 thereon exhibits substantial absorption of visible light.

[0636] FIG. 8F shows SEM images of the light-absorbing layer 305 of a third sample designated Structure E, which is identical to that of the Structure D sample 840, but with the covering layer 170 removed, to facilitate photography thereof, at varying magnifications. As may be seen, the light-absorbing layer 305 may be seen to comprise at least one substantially large particle structure 150BM.

[0637] A series of experiments was designed to investigate the impact on absorption, as a function of wavelength, of a third set of samples, each comprising an lightabsorbing layer 305, comprising at least one particle structure 150BM, comprised of a deposited material 1131, comprising Yb patterned thereon using a patterning coating 110.

[0638] Each of the third set of samples comprised at least one semiconducting layer 230, comprising a first electrode 220, comprising Ag, deposited to an average layer depth of substantially about 50.0 nm, at least one semiconducting layer 230 comprising a hole transport material (HTM), deposited to an average layer depth of substantially about 170.0 nm, with a second electrode 240, comprising an initial layer of Mg:Ag in a 1 :10 ratio, deposited to an average layer depth of substantially about 10.0 nm, on which was deposited the first patterning coating 110 used in the Structure A sample 810, but to an average layer depth of substantially of about 15.0 nm. Thereafter, the sample was exposed to a vapour flux 1132 of a deposited material 1131 comprising Yb, to an average layer depth of substantially about 70.0 nm.

[0639] In a first sample, designated Structure F 850, the light-absorbing layer 305 has deposited thereon, a covering layer, comprising, successively, an HTM, to an average layer depth of substantially about 50.0 nm, and MoCh, to an average layer depth of substantially about 1.0 pm.

[0640] In a second sample, designated Structure G 860, the light-absorbing layer 305 has deposited thereon, a covering layer 170, comprising, successively, an HTM, to an average layer depth of substantially about 50.0 nm, LiF, to an average layer depth of substantially about 50.0 nm, and MoCh, to an average depth of substantially about 1.0 pm.

[0641] FIG. 8G is a graph of absorption, expressed as a percentage, as a function of wavelength, for each of the samples 850, 860 in the third set described herein. As may be seen, the absorption exhibited by each sample tends to oscillate substantially as the wavelength is varied.Patterning

[0642] In some non-limiting examples, with reference to FIG. 1, in some nonlimiting examples, a patterning coating 110, comprising a patterning material 1011, which in some non-limiting examples, may be an NIC material, may be disposed, in some nonlimiting examples, as a closed coating 140, on an exposed layer surface 11 of an underlying layer 15, including without limitation, a substrate 10, of the device 100, in some nonlimiting examples, restricted in lateral extent by selective deposition, including withoutlimitation, using a shadow mask 1015 such as, without limitation, a fine metal mask (FMM), including without limitation, to the first portion 101.

[0643] Thus, in some non-limiting examples, in the second portion 102 of the device 100, the exposed layer surface 11 of the underlying layer 15 of the device 100, may be substantially devoid of a closed coating 140 of the patterning coating 110.

[0644] In some non-limiting examples, with reference to FIG. 1, in some nonlimiting examples, a patterning coating 110, comprising a patterning material 1011, which in some non-limiting examples, may be an NIC material, may be disposed, in some nonlimiting examples, as a closed coating 140, on an exposed layer surface 11 of an underlying layer 15, including without limitation, a substrate 10, of the device 100, in some nonlimiting examples, restricted in lateral extent by selective deposition, including without limitation, using a shadow mask 1015 such as, without limitation, an FMM, including without limitation, to the first portion 101.

[0645] Thus, in some non-limiting examples, in the second portion 102 of the device 100, the exposed layer surface 11 of the underlying layer 15 of the device 100, may be substantially devoid of a closed coating 140 of the patterning coating 110.Display Panel and User Device

[0646] Turning now to FIG. 9, there is shown a cross-sectional view of an example layered opto-electronic device 200, such as a display panel 900. In some non-limiting examples, the display panel 900 may comprise a plurality of layers deposited on a substrate 10, culminating with an outermost layer that forms a face 901 thereof. In some non-limiting examples, the display panel 900 may be a version of the device 200.

[0647] The face 901 of the display panel 900 may extend across a lateral aspect thereof, substantially along a plane defined by the lateral axes.

[0648] In some non-limiting examples, the face 901, and indeed, the entire display panel 900, may act as a face of a user device 910 through which at least one EM signal 931 may be exchanged therethrough at a non-zero angle relative to the plane of the face 901. In some non-limiting examples, the user device 910 may be a computing device 910, such as, without limitation, a smartphone, a tablet, a laptop, an e-reader, and some other electronicdevice 910, such as a monitor, a television set, and a smart device 910, including without limitation, an automotive display, windshield, a household appliance, and a medical, commercial, and industrial device 910.

[0649] In some non-limiting examples, the face 901 may correspond to, and in some non-limiting examples, mate with, at least one of: a body 920, and an opening 921 therewithin, within which at least one under-display component 930 may be housed.

[0650] In some non-limiting examples, the at least one under-display component 930 may be formed, including without limitation, at least one of: integrally, and as an assembled module, with the display panel 900 on a surface thereof opposite to the face 901.

[0651] In some non-limiting examples, at least one aperture 922 may be formed in the display panel 900 to allow for the exchange of at least one EM signal 931 through the face 901 of the display panel 900, at a non-zero angle to the plane defined by the lateral axes, including without limitation, concomitantly, the layers of the display panel 900, including without limitation, the face 901 of the display panel 900.

[0652] In some non-limiting examples, the at least one aperture 922 may be understood to comprise one of the: absence, and reduction, in at least one of: thickness, and capacity, of a substantially opaque coating otherwise disposed across the display panel 900. In some non-limiting examples, the at least one aperture 922 may be embodied as a transmissive region 212 as described herein.

[0653] However the at least one aperture 922 is embodied, the at least one EM signal 931 may pass therethrough such that it passes through the face 901. As a result, the at least one EM signal 931 may be considered to exclude any light that may extend along the plane defined by the lateral axes, including without limitation, any electric current that may be conducted across at least one particle structure 150 laterally across the display panel 900.

[0654] Further, those having ordinary skill in the relevant art will appreciate that the at least one EM signal 931 may be differentiated from light per se, in that the at least one EM signal 931 may convey, either one of: alone, and in conjunction with other EM signals 931, some information content, including without limitation, an identifier by which the atleast one EM signal 931 may be distinguished from other EM signals 931. In some nonlimiting examples, the information content may be conveyed by at least one of: specifying, altering, and modulating, at least one of: the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, spatial position, and other characteristic of the at least one EM signal 931.

[0655] In some non-limiting examples, the at least one EM signal 931 passing through the at least one aperture 922 of the display panel 900 may comprise at least one photon and, in some non-limiting examples, may have a wavelength spectrum that lies, without limitation, within at least one of: the visible spectrum, the IR spectrum, and the NIR spectrum. In some non-limiting examples, the at least one EM signal 931 passing through the at least one aperture 922 of the display panel 900 may have a wavelength that lies, without limitation, within at least one of the: IR, and NIR spectrum.

[0656] In some non-limiting examples, the at least one EM signal 931 passing through the at least one aperture 922 of the display panel 900 may comprise ambient light incident thereon.

[0657] In some non-limiting examples, the at least one EM signal 931 exchanged through the at least one aperture 922 of the display panel 900 may be at least one of: transmitted, and received, by the at least one under-display component 930.

[0658] In some non-limiting examples, the at least one under-display component 930 may have a size that is at least a single transmissive region 212, but may underlie not only a plurality thereof, but also at least one emissive region 210 extending therebetween. Similarly, in some non-limiting examples, the at least one under-display component 930 may have a size that is at least a single one of the at least one apertures 922.

[0659] In some non-limiting examples, the at least one under-display component 930 may comprise a receiver 930r, adapted to receive and process at least one received EM signal 93 lr, passing through the at least one aperture 922 from beyond the user device 910. In some non-limiting examples, such receiver 93 Or may comprise at least one of: an underdisplay camera (UDC), and a sensor, including without limitation, IR sensor / detector, an NIR sensor / detector, a LIDAR sensing module, a fingerprint sensing module, an opticalsensing module, an IR (proximity) sensing module, an iris recognition sensing module, and a facial recognition sensing module, including without limitation, a part thereof.

[0660] In some non-limiting examples, the at least one under-display component 930 may comprise a transmitter 930t adapted to emit at least one transmitted EM signal 93 It passing through the at least one aperture 922 beyond the user device 910. Non-limiting examples, of such transmitter 930t include a source of light, including without limitation, a built-in flash, a flashlight, an IR emitter, a NIR emitter, a LIDAR sensing module, a fingerprint sensing module, an optical sensing module, an IR (proximity sensing module, an iris recognition sensing module, and a facial recognition sensing module, including without limitation, a part thereof.

[0661] In some non-limiting examples, the at least one received EM signal 93 lr may include at least a fragment of the at least one transmitted EM signal 93 It which is one of: reflected off, and otherwise returned by, an external surface to the user device 910, including without limitation, a user 90.

[0662] In some non-limiting examples, the at least one EM signal 931 passing through the at least one aperture 922 of the display panel 900 beyond the user device 910, including without limitation, those transmitted EM signals 93 It emitted by the at least one under-display component 930 that may comprise a transmitter 930t, may emanate from the display panel 900, and pass back as received EM signals 93 lr through the at least one aperture 922 of the display panel 900 to at least one under-display component 930 that may comprise a receiver 93 Or.

[0663] In some non-limiting examples, the under-display component 930 may comprise an IR emitter and an IR sensor. In some non-limiting examples, such underdisplay component 930 may comprise, as one of: a part, component, and module, thereof: at least one of: a dot-matrix projector, a vertical cavity surface-emitting laser (VCSEL), flood illuminator, NIR imager, folded optics, a diffractive grating, and a time-of-flight (ToF) sensor module, which may operate as one of: a direct, and an indirect, ToF sensor.

[0664] In some non-limiting examples, there may be a plurality of under-display components 930 within the user device 910, a first one of which may comprise a transmitter 930t for emitting at least one transmitted EM signal 93 It to pass through the at least oneaperture 922, beyond the user device 910, and a second one of which may comprise a receiver 93 Or, for receiving at least one received EM signal 93 lr. In some non-limiting examples, such transmitter 930t and receiver 93 Or may be embodied in a single underdisplay component 930.

[0665] In some non-limiting examples, the display panel 900 may comprise at least one signal-exchanging part 903 and at least one display part 907.

[0666] In some non-limiting examples, the at least one display part 907 may comprise a plurality of emissive regions 210, in some non-limiting examples, laid out in a lateral pattern. In some non-limiting examples, the emissive regions 210 in the at least one display part 907 may correspond to (sub-) pixels 415 / 216 of the display panel 900.

[0667] In some non-limiting examples, the at least one signal-exchanging part 903 may comprise at least one emissive region 210 and at least one transmissive region 212. In some non-limiting examples, the at least one emissive region 210 in the at least one signalexchanging part 903 may correspond to (sub-) pixel(s) 415 / 216 of the display panel 900, and in some non-limiting examples, may be substantially laid out in a similar, including without limitation, identical, lateral pattern as in the at least one display part 907.

[0668] In some non-limiting examples, the at least one display part 907 may be adjacent to, and in some non-limiting examples, separated by, at least one signalexchanging part 903.

[0669] In some non-limiting examples, the at least one signal-exchanging part 903 may be positioned proximate to an extremity of the display panel 900, including without limitation, at least one of: an edge, and a corner, thereof. In some non-limiting examples, the at least one signal-exchanging part 903 may be positioned substantially centrally within the lateral aspect of the display panel 900.

[0670] In some non-limiting examples, the at least one display part 907 may substantially surround, including without limitation, in conjunction with at least one other display part 907, the at least one signal-exchanging part 903.

[0671] In some non-limiting examples, the at least one signal-exchanging part 903 may be positioned proximate to an extremity and configured such that the at least onedisplay part(s) 907 do(es) not completely surround the at least one signal-exchanging part 903.

[0672] In some non-limiting examples, a pixel density of the at least one emissive region 210 of the at least one signal-exchanging part 903 may be substantially the same as a pixel density of the at least one emissive region 210 of the at least one display part 907 proximate thereto, at least in an area thereof that is substantially proximate to the at least one signal-exchanging part 903. In some non-limiting examples, the pixel density of the display panel 900 may be substantially uniform thereacross. In at least some applications, there may be scenarios calling for the at least one signal-exchanging part 903 and the at least one display part 907 to have substantially the same pixel density, including without limitation, so that a resolution of the display panel 900 may be substantially the same across both the at least one signal-exchanging part 903 and the at least one display part 907 thereof.

[0673] Those having ordinary skill in the relevant art will appreciate that there may be scenarios calling for the layout of (sub-) pixels 415 / 216 in the signal-exchanging part 903 of the display panel 900 to resemble, to some extent, the layout thereof in the display part 907 of the display panel 900, including without limitation, a size, shape, (colour) order, and configuration of (sub-) pixels 415 / 216, and wherein a spacing between adjacent (sub-) pixels 415 / 216 (“pitch”) in the signal-exchanging part 903 is one of: the same, and an integer multiple thereof, of a pitch thereof in the display part 907.

[0674] Having said this, examples in the present disclosure may have applicability in scenarios in which the layout of (sub-) pixels 415 / 216 in the signal-exchanging part 903 may be substantially different than the layout thereof in the display part 907 of the display panel 900.

[0675] In some non-limiting examples, the display panel 900 may further comprise at least one transition region (not shown) between the at least one signal-exchanging part 903 and the at least one display part 907, wherein the configuration of at least one of: the emissive regions 210, and the transmissive regions 212, therein, may differ from those of at least one of: the at least one signal-exchanging part 903, and the at least one display part 907. In some non-limiting examples, such transition region may be omitted such that theemissive regions 210 may be provided in a substantially continuous repeating pattern across both the at least one signal-exchanging part 903 and the at least one display part 907.

[0676] In some non-limiting examples, the at least one signal-exchanging part 903 may have a polygonal contour, including without limitation, at least one of a substantially square, and rectangular, configuration.

[0677] In some non-limiting examples, the at least one signal-exchanging part 903 may have a curved contour, including without limitation, at least one of a substantially circular, oval, and elliptical, configuration.

[0678] In some non-limiting examples, the transmissive regions 212 in the at least one signal-exchanging part 903 may be configured to allow EM signals 931 having a wavelength (range) corresponding to the IR spectrum to pass through the entirety of a cross- sectional aspect thereof.

[0679] In some non-limiting examples, the at least one signal-exchanging part 903 may have a reduced number of, including without limitation, be substantially devoid of, backplane components, including without limitation, TFT structures 206, including without limitation, metal trace lines, capacitors, and other light-absorbing element, including without limitation, opaque elements, the presence of which may otherwise interfere with the capture of the light by the at least one under-display component 930, including without limitation, the capture of an image by a camera.

[0680] In some non-limiting examples, the user device 910 may house at least one transmitter 930t for transmitting at least one transmitted EM signal 93 It through at least one first transmissive region 212 in, and in some non-limiting examples, substantially corresponding to, a first signal-exchanging part 903, beyond the face 901. In some nonlimiting examples, the user device 910 may house at least one receiver 93 Or for receiving at least one received EM signal 93 lr through at least one second transmissive region 212 in, and in some non-limiting examples, substantially corresponding to, a second signalexchanging part 903, from beyond the face 901. In some non-limiting examples, the at least one received EM signal 93 lr may be the same as the at least one transmitted EM signal 93 It, reflected off an external surface, including without limitation, a user 90, including without limitation, for biometric authentication thereof.

[0681] In some non-limiting examples, at least one of: the at least one transmitter 930t, and the at least one receiver 930t, may be arranged behind the corresponding at least one signal-exchanging part 903, such that IR signals may be at least one of: emitted, and received, respectively, by passing through the at least one signal-exchanging part 903 of the display panel 900. In some non-limiting examples, the at least one transmitter 930t and the at least one receiver 93 Or may both be arranged behind a single signal-exchanging part 903, which in some non-limiting examples, may be elongated along at least one configuration axis, such that it extends across both the at least one transmitter 930t and the at least one receiver 93 Or.

[0682] In some non-limiting examples, the display panel 900 may further comprise a non-display part (not shown), which in some non-limiting examples, may be substantially devoid of any emissive regions 210. In some non-limiting examples, the user device 910 may house an under-display component 930, including without limitation, a camera, arranged within the non-display part.

[0683] In some non-limiting examples, the non-display part may be arranged adjacent to, and in some non-limiting examples, between a plurality of signal-exchanging parts 903 corresponding to a plurality of under-display components 930, including without limitation, a transmitter 930t and a receiver 93 Or.

[0684] In some non-limiting examples, the non-display part may comprise a through-hole part (not shown), which in some non-limiting examples, may be arranged to overlap the camera. In some non-limiting examples, the display panel 900 may, in the through-hole part, be substantially devoid of any of at least one of a: layer, coating, and component, that may otherwise be present in at least one of the: at least one signalexchanging part 903, and at least one display part 907, including without limitation, a component of at least one of the: backplane 202, and frontplane 201, the presence of which may otherwise interfere with the capture of an image by the camera. In some non-limiting examples, an overlying layer 170, including without limitation, at least one of: a polarizer, and one of a: cover glass, and glass cap, of the display panel 900, may extend substantially across the at least one signal-exchanging part 903, the at least one display part 907, and the non-display part, such that it may extend substantially across the display panel 900. Insome non-limiting examples, the through-hole part may be substantially devoid of a polarizer in order to enhance the transmission of light therethrough.

[0685] In some non-limiting examples, the non-display part may comprise a non- through-hole part, which in some non-limiting examples, may be arranged between the through-hole part and an adjacent signal-exchanging part 903 in a lateral aspect. In some non-limiting examples, the non-through-hole part may surround at least a part of a perimeter of the through-hole part. In some non-limiting examples, the user device 910 may comprise additional ones of at least one of a: module, component, and sensor, in a part of the user device 910 corresponding to the non-through-hole part of the display panel 900.

[0686] In some non-limiting examples, the emissive regions 210 in the at least one signal-exchanging part 903 may be electrically coupled with at least one TFT structure 206 located in the non-through-hole part of the non-display part. That is, in some non-limiting examples, the TFT structures 206 for actuating the (sub-) pixels 415 / 216 in the at least one signal-exchanging part 903 may be relocated outside the at least one signal-exchanging part 903 and within the non-through-hole part of the display panel 900, such that a substantially high transmission of light, in at least one of the: IR, and NIR, spectrum, may be directed through the non-emissive regions 211 within the at least one signal-exchanging part 903. In some non-limiting examples, the TFT structures 206 in the non-through-hole part may be electrically coupled with (sub-) pixels 415 / 216 in the at least one signal-exchanging part 903 via conductive trace(s). In some non-limiting examples, at least one of the: transmitter 930t, and receiver 93 Or, may be arranged to be proximate to the non-through-hole part in the lateral aspect, such that a distance over which electrical current travels between: the TFT structures 206 and the (sub-) pixels 415 / 216 associated therewith, may be reduced.Patterning Coating

[0687] The patterning coating 110 may comprise a patterning material 1011. In some non-limiting examples, the patterning material 1011 may comprise an NIC material. In some non-limiting examples, the patterning coating 110 may comprise a closed coating 140 of the patterning material 1011.

[0688] The patterning coating 110 may provide an exposed layer surface 11 with a substantially low propensity (including without limitation, a substantially low initialsticking probability) (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.) against the deposition of a deposited material 1131 to be deposited thereon upon exposing such surface to a vapor flux 1132 of the deposited material 1131, which, in some non-limiting examples, may be substantially no more than a propensity against the deposition of the deposited material 1131 to be deposited on the exposed layer surface 11 of the underlying layer 15 of the device 100, upon which the patterning coating 110 has been deposited.

[0689] Because of the attributes, including without limitation, a low initial sticking probability, of at least one of the patterning coating 110, and the patterning material 1011, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, against the deposition of the deposited material 1131, the exposed layer surface 11 of the first portion 101 comprising the patterning coating 110 may be substantially devoid of a closed coating 140 of the deposited material 1131.

[0690] In some non-limiting examples, exposure of the device 100 to a vapor flux 1132 of the deposited material 1131 may, in some non-limiting examples, result in the formation of a closed coating 140 of a deposited layer 130 of the deposited material 1131 in the second portion 102, where the exposed layer surface 11 of the underlying layer 15 may be substantially devoid of a closed coating 140 of the patterning coating 110.

[0691] In some non-limiting examples, the patterning coating 110 may be an NIC that provides high deposition (patterning) contrast against subsequent deposition of the deposited material 1131, such that the deposited material 1131 tends not to be deposited, in some non-limiting examples, as a closed coating 140, where the patterning coating 110 has been deposited.

[0692] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 110 for causing formation of a discontinuous layer 160 of at least one particle structure 150, upon the (particle structure) patterning coating 110(p) in the first portion 101 being subjected to a vapor flux 1132 of a deposited material 1131. In at least some applications, the attributes of the (particle structure) patterning coating 110(p> may be such that a closed coating 140 of the deposited material 1131 may be formed in the secondportion 102, which may be substantially devoid of the patterning coating 110, such that it may also act as a non-particle structure patterning coating 110n, while only a discontinuous layer 160 of at least one particle structure 150 having at least one characteristic may be formed in the first portion 101 on the patterning coating 110.

[0693] Those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, a patterning coating 110 may act as both a particle structure patterning coating 110pand a non-particle structure patterning coating 110n.

[0694] In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 160 of at least one particle structure 150 of a deposited material 1131, which may be, in some non-limiting examples, of one of a: metal, and metal alloy (metal / alloy), including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, in the second portion 102, while depositing a closed coating 140 of the deposited material 1131 having a thickness of, without limitation, one of no more than about: 100, 50, 25, and 15, nm. In some non-limiting examples, an amount of the deposited material 1131 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of between about: 1- 50%, 2-25%, 5-20%, and 7-10%, of the amount of the deposited material 1131 deposited as a closed coating 140 in the second portion 102, which, by way of non-limiting example may correspond to a thickness of one of no more than about: 100, 75, 50, 25, and 15, nm.

[0695] In some non-limiting examples, the patterning coating 110 may be disposed in a pattern that may be defined by at least one region therein that may be substantially devoid of a closed coating 140 of the patterning coating 110.

[0696] In some non-limiting examples, the at least one region may separate the patterning coating 110 into a plurality of discrete fragments thereof. In some non-limiting examples, the plurality of discrete fragments of the patterning coating 110 may be physically spaced apart from one another in the lateral aspect thereof. In some non-limiting examples, the plurality of the discrete fragments of the patterning coating 110 may be arranged in a regular structure, including without limitation, an array (matrix), such that in some non-limiting examples, the discrete fragments of the patterning coating 110 may be configured in a repeating pattern.

[0697] In some non-limiting examples, at least one of the plurality of the discrete fragments of the patterning coating 110 may each correspond to an emissive region 210. In some non-limiting examples, an aperture ratio of the emissive regions 410 may be one of no more than about: 50%, 40%, 30%, and 20%.

[0698] In some non-limiting examples, the patterning coating 110 may be formed as a single monolithic coating.Attributes of Patterning Coating / MaterialComposition

[0699] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 1011, may comprise at least one of: a fluorine (F) atom, and a silicon (Si) atom. In some non-limiting examples, a patterning material 1011 for forming the patterning coating 110 may be a compound that comprises at least one of: F and Si.

[0700] In some non-limiting examples, the patterning material 1011 may comprise a compound that comprises F. In some non-limiting examples, the patterning material 1011 may comprise a compound that comprises F and a carbon (C) atom. In some non-limiting examples, the patterning material 1011 may comprise a compound that comprises F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0701] In some non-limiting examples, an atomic ratio of F to C may be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp3hybridized C atoms present in the compound structure. In some non-limiting examples, the patterning material 1011 may comprise a compound that comprises, as part of its molecular sub-structure, a moiety comprising F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 1, 1.5, and 2.

[0702] In some non-limiting examples, the patterning material 1011 may comprise an organic-inorganic hybrid material.

[0703] In some non-limiting examples, the patterning material 1011 may comprise an oligomer.

[0704] In some non-limiting examples, the patterning material 1011 may comprise a compound having a molecular structure comprising a backbone and at least one functionalgroup bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic moiety, and the at least one functional group may be an organic moiety.

[0705] In some non-limiting examples, such compound may have a molecular structure comprising a siloxane group. In some non-limiting examples, the siloxane group may be one of a: linear , branched , and cyclic, siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluorosiloxanes, including without limitation, Example Material 6 and Example Material 9 (discussed herein).

[0706] In some non-limiting examples, the compound may have a molecular structure comprising a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the backbone may comprise a silsesquioxane group. In some non-limiting examples, the backbone may comprise a silsesquioxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro- silsesquioxane and fluoro-POSS, including without limitation, Example Material 8 (discussed herein).

[0707] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of: phenyl, and naphthyl. In some nonlimiting examples, at least one C atom of an aryl group may be substituted by a heteroatom, including without limitation, at least one of: O, N, and S, to derive a heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group and atleast one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.

[0708] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted hydrocarbon, an unsubstituted hydrocarbon, a linear hydrocarbon, a branched hydrocarbon, and a cyclic hydrocarbon, group. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted by a heteroatom, including without limitation, at least one of: O, N, and S.

[0709] In some non-limiting examples, the compound may have a molecular structure comprising a phosphazene group. In some non-limiting examples, the phosphazene group may be at least one of a: linear, branched, and cyclic, phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group, including without limitation, fluoro-phosphazenes, including without limitation, Example Material 4 (discussed herein).

[0710] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer comprising F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer comprising F. In some non-limiting examples, the at least one of: fluoropolymers, and fluorooligomers, may comprise those having the molecular structure of at least one of: Example Material 3, Example Material 5, and Example Material 7 (discussed herein).

[0711] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organo-metal complex. In some non-limiting examples, the organo-metal complex may comprise F. In some non-limiting examples, the organo-metal complex may comprise at least one ligand comprising F. In some non-limiting examples, the at least one ligand comprising F may comprise a fluoroalkyl group.

[0712] In some non-limiting examples, the patterning material 1011 may comprise a plurality of different materials.Initial Sticking Probability

[0713] In some non-limiting examples, the initial sticking probability of the patterning material 1011 may be determined by depositing such material as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, having sufficient thickness so as to mitigate / reduce any effects on the degree of inter-molecular interaction with the underlying layer 15 upon deposition on a surface thereof. In some non-limiting examples, the initial sticking probability may be measured on a film / coating having a thickness of one of at least about: 20, 25, 30, 50, 60, and 100, nm.

[0714] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 1011, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of the deposited material 1131, that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0715] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 1011, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of at least one of: Ag, and Mg, that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0716] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 1011, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of a deposited material 1131 of one of between about: 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005, 0.02-0.0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01- 0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008- 0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.0...

Claims

WHAT IS CLAIMED IS:

1. An opto-electronic device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof, comprising: at least one emissive region comprising: a first electrode; a second electrode; at least one semiconducting layer disposed between the first electrode and the second electrode, the first electrode being disposed between the substrate and the at least one semiconducting layer; a light-absorbing layer surrounding the at least one emissive region, the light-absorbing layer for reducing reflection of light incident thereon, and comprising: at least one dielectric layer; and at least one particle structure deposited with the at least one dielectric layer.

2. The device of claim 1, wherein the second electrode extends beyond the at least one emissive region.

3. The device of claim 1 or 2, wherein the light-absorbing layer is deposited on an exposed layer surface of the second electrode in at least the at least one emissive region and at least a part of at least one non-emissive region adjacent thereto.

4. The device of any one of claims 1 through 3, wherein the light-absorbing layer surrounds each of the at least one emissive regions.

5. The device of any one of claims 1 through 3, wherein the light-absorbing layer surrounds a cluster of a plurality of the at least one emissive regions.

6. The device of claim 5, wherein the cluster of emissive regions corresponds to a pixel comprising a plurality of sub-pixels.

7. The device of any one of claims 1 through 6, wherein the light-absorbing layer surrounds at least a part of a non-emissive region adjacent to the surrounded at least one emissive region.

8. The device of any one of claims 1 through 7, wherein the at least one dielectric layer comprises a capping layer of the device.

9. The device of any one of claims 1 through 8, further comprising at least one patterning coating disposed on an exposed layer surface of an underlying layer of the device, in a first portion of the lateral aspect comprising at least the at least one emissive region, wherein an exposed layer surface of the at least one patterning coating has a reduced propensity for the deposited material to be deposited thereon relative to the exposed layer surface of the underlying layer, such that the at least one patterning coating is substantially devoid of the at least one particle structure thereon.

10. The device of claim 9, wherein the underlying layer is the at least one dielectric layer.

11. The device of claim 9 or 10, wherein the at least one dielectric layer supports the at least one particle structure on an exposed layer surface thereof.

12. The device of any one of claims 9 through 11, wherein the exposed layer surface of the at least one dielectric layer is substantially devoid of the at least one particle structure in at least the first portion.

13. The device of claim 9, wherein the underlying layer is the second electrode.

14. The device of claim 13, wherein the at least one particle structure is interspersed within the at least one dielectric layer.

15. The device of claim 14, wherein the at least one particle structure interspersed within the at least one dielectric layer is formed by exposing the exposed layer surface of the device to a vapor flux of the deposited material co-deposited with a dielectric material of which the at least one dielectric layer is comprised.

16. The device of claim 14 or 15, wherein the at least one particle structure forms a plurality of layers within the at least one dielectric layer.1717. The device of claim 9, wherein the at least one patterning coating is disposed on an exposed layer surface of a patterning coating bank structure having a local depression within an active region of the emissive region, and the at least one patterning coating is provided by an inkjet printing operation.

18. The device of any one of claims 1 through 17, wherein the at least one particle structure is comprised of a metallic deposited material.

19. The device of any one of claims 1 through 18, wherein the at least one particle structure forms a discontinuous layer.

20. The device of claim 19, wherein the discontinuous layer extends in a second portion of the lateral aspect adjacent to the first portion.

21. The device of any one of claims 1 through 20, wherein the at least one patterning coating has a central non-transition part of substantially uniform thickness surrounded by a transition region in which a thickness thereof transitions from a maximum thickness to a reduced thickness.

22. The device of claim 21, wherein the transition region lies between the non-transition part and the second portion.

23. The device of claim 21 or 22, wherein a size, in the lateral aspect, of the non-transition part is no more than a size, in the lateral aspect, of the transition region.

24. The device of any one of claims 21 through 23, wherein the transition region comprises a transition peripheral part adjacent to the second portion and a transition intermediate part between the transition peripheral part and the non-transition part.

25. The device of claim 24, wherein a perimeter of the transition intermediate part corresponds to a critical thickness of the at least one patterning coating below which at least one particle structure may tend to form on the at least one patterning coating and above which the at least one patterning coating may be substantially devoid of the at least one particle structure.

26. The device of claim 24 or 25, wherein a thickness of the at least one patterning coating throughout the transition intermediate part is at least the critical thickness and where a thickness17 of the at least one patterning coating in the transition peripheral part is no more than the critical thickness.

27. The device of any one of claims 24 through 26, wherein the at least one particle structure on the at least one patterning coating in the transition peripheral part differs from the at least one particle structure of the light-absorbing layer in at least one of: particle size, particle deposited density, and area coverage.

28. The device of any one of claims 24 through 27, wherein at least one of a: characteristic size, length, width, diameter, height, and an average thereof, of the at least one particle structure of the light-absorbing layer is at least that of the at least one particle structure on the at least one patterning coating in the transition peripheral part.

29. The device of any one of claims 24 through 28, wherein a deposited density of the at least one particle structure of the light-absorbing layer is at least that of the at least one particle structure on the at least one patterning coating in the transition peripheral part.

30. The device of any one of claims 24 through 29, wherein the at least one particle structure of the light-absorbing layer exhibits an area coverage that is at least that of the at least one particle structure on the at least one patterning coating in the transition peripheral part.

31. The device of any one of claims 1 through 30, wherein the at least one particle structure forms in the second portion.

32. The device of any one of claims 1 through 31, wherein the exposed layer surface of the device in the second portion comprises an auxiliary electrode comprising a deposited material deposited before the vapor flux.

33. The device of claim 32, wherein the auxiliary electrode is formed by actions of: forming a first one of the at least one patterning coating in the first portion, and presenting an exposed layer surface of the device to a vapor flux of the deposited material, and the light-absorbing layer is thereafter formed by actions of: covering the exposed layer surface of the device with a first one of the at least one dielectric layer, depositing a second one of the at least one patterning coating in the first portion, and exposing an exposed layer surface of the device to a vapor flux of17 the deposited material co-deposited with the dielectric material to form the at least one particle structure interspersed within a second one of the at least one dielectric layer.

34. The device of any one of claims 1 through 33, wherein the at least one particle structure comprises a nanoparticle.

35. The device of any one of claims 1 through 34, wherein at least one of a: characteristic size, size distribution, shape, surface coverage, configuration, deposition density, dispersity, material property, and degree of aggregation of the at least one particle structure affects an optical response selected from at least one of: a (sub-)range of an EM spectrum, refractive index, and extinction coefficient, of one of: localized surface plasmon (LSP) excitations, and coherent oscillations of free electrons, of at least one of: a nanostructure of the at least one particle structure, and a medium proximate thereto.

36. The device of any one of claims 1 through 35, wherein the light-absorbing layer is covered by an overlying layer.

37. The device of claim 36, wherein the overlying layer comprises a thin film encapsulation (TFE) layer.

38. The device of claim 36 or 37, wherein the TFE layer comprises at least one of: an LiF layer, and an SiNx / SiOxNy layer.

39. The device of any one of claims 36 through 38, wherein the overlying layer comprises a covering dielectric layer.

40. The device of claim 39, wherein the covering dielectric layer is disposed between the TFE layer and the light-absorbing layer.

41. The device of any one of claims 1 through 40, wherein the at least one semiconducting layer comprises an emissive layer.

42. The device of claim 41, wherein the emissive layer is disposed on an exposed layer surface of an EML bank structure having a local depression within an active region of the emissive region, and the emissive layer is provided by an ink-jet printing operation.

Images