Substrate processing method and substrate processing device

Abstract

This substrate processing device for processing a substrate includes: an electrostatic chuck including a chamber for airtightly accommodating the substrate, at least one mounting table for supporting the substrate in the chamber, a first substrate support region provided on the mounting table and serving as a normal position where the substrate is supported, and a second substrate support region as a peripheral region surrounding the first substrate support region in a plan view; and a peripheral gas supply unit including a gas hole provided in the second substrate support region, a gas flow path connected to the gas hole, a gas source for supplying the gas to the gas hole via the gas flow path, and a gas detection unit for detecting the flow rate or pressure of the gas in the gas flow path.

Description

Substrate processing method and substrate processing apparatus

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus.

[0002] Patent Document 1 discloses a device that includes a misalignment detection protrusion that protrudes higher than the substrate holding surface and a pressure measurement means that measures the pressure in the gas flow path, and when a substrate is held on the mounting table, detects the amount of gas leaking from the gas hole based on the detected pressure from the pressure measurement means, and based on the detection result, detects whether the substrate has misaligned beyond a predetermined misalignment tolerance.

[0003] JP 2008-172170 A

[0004] The technology according to the present disclosure detects the positional deviation of a substrate prior to substrate processing.

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, comprising: a chamber for airtightly accommodating the substrate; at least one mounting table for supporting the substrate within the chamber; an electrostatic chuck including: a first substrate support region provided on the mounting table as a normal position where the substrate is supported; and a second substrate support region as a peripheral region surrounding the first substrate support region in a planar view; and a peripheral gas supply unit including: a gas hole provided in the second substrate support region; a gas flow path connected to the gas hole; a gas source for supplying the gas to the gas hole via the gas flow path; and a gas detector for detecting a flow rate or pressure of the gas in the gas flow path.

[0006] According to the present disclosure, it is possible to detect the positional deviation of a substrate prior to substrate processing.

[0007] FIG. 1 is a longitudinal sectional view showing an outline of the configuration of a substrate processing apparatus according to this embodiment; FIG. 2 is a perspective view showing an outline of the configuration of a partition wall according to this embodiment; FIG. 3 is a longitudinal sectional view showing an outline of an example state of the substrate processing apparatus according to this embodiment; FIG. 4 is a longitudinal sectional view showing an outline of the configuration of a mounting table according to this embodiment; FIG. 5 is a plan view seen from above showing an outline of the configuration of the mounting table according to this embodiment; FIG. 6 is a longitudinal sectional view showing an example state of a substrate being placed on the mounting table; FIG. 7 is a plan view seen from above showing an example state of a substrate being placed on the mounting table; FIG. 8 is a longitudinal sectional view showing an example state when a partition wall is raised in the substrate processing apparatus; FIG. 9 is a plan view showing an outline of the configuration of a mounting table according to a modified example; and FIG. 10 is a flowchart showing an outline of the configuration of a substrate processing method according to this embodiment.

[0008] In the manufacturing process of semiconductor devices, various processing steps are performed in which semiconductor wafers (hereinafter referred to as "substrates") are stored in processing modules under reduced pressure and the substrates are subjected to predetermined processing. These processing steps are performed using a substrate processing apparatus in which multiple processing modules are arranged around a common transfer module, for example.

[0009] In a substrate processing apparatus, the above-described predetermined processing is performed with the substrate placed on a substrate support unit such as an electrostatic chuck, which holds the substrate at a desired position and detects any positional deviation on the substrate support surface.

[0010] Patent document 1 discloses that the presence or absence of misalignment of a substrate can be detected by providing a misalignment detection protrusion that protrudes higher than the substrate support surface and a pressure measurement means that measures the pressure in the gas flow path between the substrate support part and the back surface of the substrate.

[0011] However, there are cases where the gas for detecting misalignment must be supplied to the rear surface of the substrate after the substrate is attracted by the electrostatic chuck, which is immediately before the start of processing. In such cases, the misalignment detection described in Patent Document 1 cannot be performed during the period from when the substrate is placed on the substrate support surface until immediately before the start of processing. During this period, some kind of malfunction due to misalignment of the substrate may occur, and there is room for improvement in detecting misalignment of the substrate.

[0012] The predetermined process performed in a substrate processing apparatus is, for example, a COR (Chemical Oxide Removal) process. The COR process is a process in which process gases are supplied to a substrate in a processing chamber maintained under vacuum, and these gases react with, for example, a film formed on the substrate to generate a product. The product generated on the substrate surface by the COR process is sublimated by heat treatment in the next step, thereby removing the film on the substrate surface.

[0013] In a substrate processing apparatus for performing COR processing, a liftable partition wall has been proposed to separate the processing chamber into a processing space and an exhaust space to prevent uneven flow of processing gas across the surfaces of multiple substrates (e.g., two substrates). The partition wall is located near the outer periphery of the substrate support section and, for example, is raised from a retracted position between the time the substrate is placed on the substrate support surface and the start of processing. During this lift, if the substrate is misaligned on the substrate support surface, the rising partition wall may come into contact with the substrate. This contact may result in problems such as damage to the substrate or contamination of the processing apparatus interior, including the partition wall. However, the aforementioned Patent Document 1 does not consider detecting substrate misalignment during the lifting and lowering of the partition wall.

[0014] Therefore, the technology disclosed herein detects the positional deviation of a substrate prior to substrate processing, specifically, makes it possible to detect the positional deviation of a substrate during the period from when the substrate is placed on a substrate support surface until when substrate processing begins.

[0015] Hereinafter, the configuration of the substrate processing apparatus according to this embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0016] 1 is a longitudinal sectional view schematically showing a substrate processing apparatus 1 according to the present embodiment. In this embodiment, the substrate processing apparatus 1 is described as a COR processing apparatus that performs COR processing on a substrate W, for example.

[0017] As shown in FIG. 1, the substrate processing apparatus 1 includes an airtight chamber 10, a plurality of mounting tables 11 and 12 (two in this embodiment) for mounting substrates W within the chamber 10, a shower head 13 as a processing gas supply unit that supplies processing gas to the mounting tables 11 and 12 from above, a partition wall 14 that can be raised and lowered and surrounds the outside of each mounting table 11 and 12, inner walls 15 and 15 fixed to the bottom of the chamber 10 and individually surround the outside of each mounting table 11 and 12, and a lifting mechanism 16 that raises and lowers the partition wall 14.

[0018] The chamber 10 is a container that is, for example, a substantially rectangular parallelepiped container made of a metal such as aluminum or stainless steel. The chamber 10 has a cylindrical sidewall 20 that is, for example, substantially rectangular in plan view and has open top and bottom surfaces, a ceiling plate 21 that airtightly covers the top surface of the sidewall 20, and a bottom plate 22 that covers the bottom surface of the sidewall 20. A sealing member (not shown) that keeps the interior of the chamber 10 airtight is provided between the top end surface of the sidewall 20 and the ceiling plate 21.

[0019] The mounting tables 11 and 12 are formed in a substantially cylindrical shape and each include an upper table 11a, 12a having a mounting surface on which the substrate W is placed, and a lower table 11b, 12b fixed to a bottom plate 22 and supporting the upper tables 11a, 12a. The upper tables 11a, 12a each incorporate a temperature adjustment mechanism 30 for adjusting the temperature of the substrate W. The temperature adjustment mechanism 30 adjusts the temperature of the mounting table 11 by circulating a coolant such as water, thereby forming a flow path for controlling the temperature of the substrate W on the mounting table 11. The detailed configuration of the mounting tables 11 and 12 will be described later. Note that the mounting tables 11 and 12 have the same configuration as described above, and unless otherwise specified, the description of the mounting table 11 also applies to the mounting table 12, so a description of the mounting table 12 will be omitted.

[0020] In addition, a support pin unit (not shown) is provided at a position below the mounting table 11 on the bottom plate 22, and is configured to be able to transfer substrates W between the bottom plate 22 and a transport mechanism (not shown) provided outside the substrate processing apparatus 1.

[0021] The shower heads 13 are individually provided on the lower surface of the ceiling plate 21 of the chamber 10, facing the mounting tables 11 and 12, respectively. The shower head 13 includes, for example, a substantially cylindrical frame 31 that is open at the bottom and supported on the lower surface of the ceiling plate 21, and a substantially disk-shaped shower plate 32 that is fitted into the inner surface of the frame 31. The shower plate 32 is provided at a predetermined distance from the ceiling of the frame 31. This forms a space 13a between the ceiling of the frame 31 and the upper surface of the shower plate 32. The shower plate 32 also has a plurality of openings 32a that penetrate the shower plate 32 in the thickness direction.

[0022] A gas supply source 34 is connected to the space 13a between the ceiling of the frame 31 and the shower plate 32 via a gas supply pipe 33. The gas supply source 34 supplies, as a processing gas, for example, hydrogen fluoride (HF) gas or ammonia (NH ３ ) gas, etc. Therefore, the process gas supplied from the gas supply source 34 is supplied to the substrates W placed on the mounting tables 11, 12 through the space 13a and the shower plate 32. The gas supply pipe 33 is provided with a flow rate adjusting mechanism 35 that adjusts the amount of process gas supplied, so that the amount of process gas supplied to each substrate W can be individually controlled. The shower head 13 may be, for example, a post-mix type that can individually supply multiple types of process gas without mixing them.

[0023] 2, the partition wall 14 has two cylindrical portions 40, 40 that individually surround the two mounting tables 11, 12, a flange portion 41 provided at the upper ends of the cylindrical portions 40, 40, and an inner flange portion 42 provided at the lower ends of the cylindrical portions 40, 40. The inner diameter of the cylindrical portion 40 is set larger than the outer surface of the mounting table 11, so that a gap is formed between the cylindrical portion 40 and the mounting table 11.

[0024] 1 , a sealing member 43 such as an O-ring is provided on the upper surface of the flange portion 41. The sealing member 43 airtightly seals the gap between the flange portion 41 and the frame 31 when the elevating mechanism 16 raises the partition wall 14 and the flange portion 41 abuts against the frame 31. A sealing member 43 is provided on each of the mounting tables 11 and 12. When the partition wall 14 is raised and the frame 31 abuts against the sealing member 43, a processing space S surrounded by the mounting table 11, the partition wall 14, and the shower head 13 is formed.

[0025] 3, the height of the partition wall 14 is set so that, for example, when the partition wall 14 is lowered by the lifting mechanism 16, the upper surface of the flange portion 41 is positioned lower than the upper surface of the mounting table 11. As a result, by lowering the partition wall 14, the substrate W can be accessed from outside the chamber 10. Note that the position where the flange portion 41 of the partition wall 14 abuts against the frame 31 (forming the processing space S) is sometimes referred to as the "substrate processing position," and the position where the partition wall 14 is lowered until it abuts against or near the bottom plate 22 is sometimes referred to as the "retracted position." Note that FIG. 1 illustrates the partition wall 14 in the substrate processing position, and FIG. 3 illustrates the partition wall 14 in the retracted position.

[0026] The inner wall 15 has a substantially cylindrical main body 15a and a flange 15b provided at the upper end of the main body 15a and protruding horizontally toward the outer periphery of the inner wall 15. As shown in Fig. 1, for example, the inner wall 15 is arranged so as to surround the lower bases 11b and 12b of the mounting tables 11 and 12, respectively. The inner diameter of the main body 15a of the inner wall 15 is set larger than the outer diameters of the lower bases 11b and 12b, and exhaust spaces V are formed between the inner wall 15 and the lower bases 11b and 12b, respectively.

[0027] 1, a seal member 44 such as an O-ring is provided on the underside of the flange portion 15b. The seal member 44 airtightly seals the gap between the flange portion 15b and the inner flange portion 42 of the partition wall 14 when the partition wall 14 is raised by the lifting mechanism 16 and the flange portion 15b and the inner flange portion 42 of the partition wall 14 come into contact with each other.

[0028] The lifting mechanism 16 that lifts and lowers the partition wall 14 includes an actuator 50 arranged outside the chamber 10, a drive shaft 51 connected to the actuator 50, which penetrates the bottom plate 22 of the chamber 10 and extends vertically upward within the chamber 10, and a plurality of guide shafts 52 whose tips are connected to the partition wall 14 and whose other ends extend to the outside of the chamber 10. The guide shafts 52 prevent the partition wall 14 from tilting when the partition wall 14 is lifted and lowered by the drive shafts 51.

[0029] The lower end of an expandable bellows 60 is airtightly connected to the drive shaft 51. The upper end of the bellows 60 is airtightly connected to the underside of the bottom plate 22. Therefore, when the drive shaft 51 moves up and down, the bellows 60 expands and contracts in the vertical direction, thereby maintaining the airtight state inside the chamber 10. Note that a sleeve (not shown), for example, fixed to the bottom plate 22, is provided between the drive shaft 51 and the bellows 60 to function as a guide during the lifting and lowering operation.

[0030] A bellows 61, which is expandable and contractible like the drive shaft 51, is connected to the guide shaft 52. The upper end of the bellows 61 straddles the bottom plate 22 and the side wall 20 and is airtightly connected to both. Therefore, when the guide shaft 52 moves up and down in conjunction with the movement of the partition wall 14 by the drive shaft 51, the bellows 61 expands and contracts in the vertical direction, thereby maintaining the airtightness inside the chamber 10. As in the case of the drive shaft 51, a sleeve (not shown) is provided between the guide shaft 52 and the bellows 61 to function as a guide during the movement of the partition wall 14.

[0031] Furthermore, since the upper end of the bellows 61 is the fixed end and the lower end of the bellows 61 connected to the guide shaft 52 is the free end, when the chamber 10 becomes negative pressure, a force compressing the bellows 61 in the vertical direction is applied due to the pressure difference between the inside and outside of the bellows 61. Therefore, the guide shaft 52 connected to the free end of the bellows 61 rises vertically upward as the bellows 61 contracts. This causes the partition wall 14 to rise evenly and brings the seal member 43 into appropriate contact with the frame 31, thereby ensuring sealing between the partition wall 14 and the frame 31. Note that a force pressing the guide shaft 52 downward acts on the guide shaft 52 due to a reaction force from the bellows 61 as an elastic member and the weight of the guide shaft 52 itself; however, the differential pressure acting on the guide shaft 52 can be adjusted by appropriately setting the diameter of the bellows 61.

[0032] An exhaust mechanism 70 that exhausts the interior of the chamber 10 is connected to the bottom plate 22 of the chamber 10, outside the inner wall 15, via an exhaust pipe 71. The exhaust pipe 71 is provided with a control valve 72 that adjusts the amount of exhaust by the exhaust mechanism 70. In addition, the bottom plate 22 is provided with a pressure measurement mechanism (not shown) that measures the pressure in each of the processing spaces S of the mounting tables 11 and 12. The opening of the control valve 72 is controlled, for example, based on a value measured by the pressure measurement mechanism.

[0033] The substrate processing apparatus 1 described above is provided with a control unit 90 as shown in FIG. 1 . The control unit 90 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform various processes described herein. The control unit 90 may be configured to control each element of the substrate processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 90 may be included in the substrate processing apparatus 1. The control unit 90 may include a processing unit, a storage unit, and a communication interface. The control unit 90 is realized, for example, by a computer. The processing unit may be configured to read a program from the storage unit and execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The processing unit may be a CPU (Central Processing Unit). The storage unit may be temporary or non-temporary and may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the substrate processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0034] <Placement Table> Next, the placement tables 11, 12 in the substrate processing apparatus 1 according to this embodiment will be described in detail with reference to Fig. 4. Fig. 4 is a vertical cross-sectional view showing the outline of the configuration of the placement table 11 according to this embodiment. Fig. 4 shows only a portion of the substrate processing apparatus 1 for explaining the outline of the configuration of the placement table 11, and omits illustration of other portions. Note that, in the following description, the placement table 11 will be described as a representative, but the same applies to the placement table 12.

[0035] The upper table 11a of the mounting table 11 includes a base 101 and an electrostatic chuck 102. The base 101 includes a conductive member. The conductive member of the base 101 can function as a lower electrode. The electrostatic chuck 102 is disposed on the base 101. The electrostatic chuck 102 includes a ceramic member 102a and an electrostatic electrode (not shown) disposed within the ceramic member 102a. The ceramic member 102a has a first substrate support region 111 and a second substrate support region 112 as a peripheral region surrounding the first substrate support region 111 in a plan view. Here, the "substrate support region" including the first substrate support region 111 and the second substrate support region 112 refers to a region where the substrate W may be supported in contact with the electrostatic chuck 102 when the substrate W is placed on the electrostatic chuck 102, but does not necessarily refer to a region where the substrate W is always supported in contact with the electrostatic chuck 102. Note that another member surrounding the electrostatic chuck 102 may include the second substrate support region 112.

[0036] The first substrate support region 111 according to this embodiment is a region that comes into contact with the substrate W when the substrate W is attracted and supported by the electrostatic chuck 102 at a normal position on the mounting table 11, and occupies a similar circular region for a circular substrate W. In other words, the first substrate support region 111 is a region that serves as a normal position for supporting the substrate W. The second substrate support region 112 according to this embodiment is an annular region that surrounds the circular first substrate support region 111 in a plan view. Note that the "normal position" refers to a position that is predetermined by the design of the electrostatic chuck 102, the processing in the substrate processing apparatus 1, and the like, and includes a position that deviates from the predetermined position due to an allowable error.

[0037] In one embodiment, the mounting table 11 includes a backside gas supply unit configured to supply a heat transfer gas to a gap 113 between the backside of the substrate W and the first substrate support region 111. The backside gas supply unit includes a backside gas passage 114 connected to the gap 113, a gas source 115 that supplies a heat transfer gas to the gap 113 via the backside gas passage 114, and a flow rate controller 116 that adjusts the flow rate of the gas supplied from the gas source 115. In one embodiment, the backside gas supply unit supplies the heat transfer gas to the gap 113 between the backside of the substrate W and the first substrate support region 111 while the substrate W is attracted and supported by the electrostatic chuck 102.

[0038] The mounting table 11 includes a peripheral gas supply unit configured to supply gas to gas holes 120 formed in the second substrate support region 112. The peripheral gas supply unit includes the gas holes 120, a peripheral gas flow path 121 connected to the gas holes 120, a gas source 115 that supplies gas to the gas holes 120 via the peripheral gas flow path 121, and a flow rate controller 122 serving as a gas adjustment unit that adjusts the flow rate of the gas supplied from the gas source 115. In this embodiment, the gas source 115 is shared by the backside gas supply unit and the peripheral gas supply unit.

[0039] The flow rate controllers 116 and 122 according to this embodiment include a pressure gauge as a gas detector. The flow rate controllers 116 and 122 may be, for example, mass flow controllers or pressure control type flow rate controllers.

[0040] In one embodiment, the gas supplied from the gas source 115 is controlled in flow rate by a flow rate controller 122 and supplied to the gas holes 120 via the peripheral gas flow passages 121. The gas that reaches the gas holes 120 is released into the processing space S.

[0041] 5 is a plan view showing the schematic configuration of the mounting table 11 according to this embodiment. As shown by the darkest shading in FIG. 5 , the gas hole 120 according to this embodiment is provided to extend in an annular shape in the second substrate support region 112. Three peripheral gas flow paths 121 are provided for the gas hole 120 and are arranged at rotationally symmetric positions in plan view. The three peripheral gas flow paths 121 converge near the center of the mounting table 11 and are connected to the gas source 115. The flow rate controller 122 is provided at the convergence point of the peripheral gas flow paths 121.

[0042] 4 and 5 , the gas holes 120 are illustrated at positions radially spaced apart from the first substrate support region 111 in the second substrate support region 112, but are not limited to such an example. In one embodiment, the gas holes 120 are provided in an annular shape such that the inner edge of the gas holes 120 contacts the outer edge of the first substrate support region 111 in the second substrate support region 112.

[0043] 4 and 5, three peripheral gas flow channels 121 are provided radially, but the present invention is not limited to such an example. As long as the gas supplied from the gas source 115 can flow through the gas holes 120, the peripheral gas flow channels 121 can be provided in any desired number and arrangement.

[0044] Furthermore, the peripheral gas supply unit according to this embodiment includes a pressure meter provided in the flow rate controller 122 as a gas detector, but is not limited to this example. In one embodiment, the peripheral gas supply unit includes a desired flow meter or pressure meter as a gas detector in the peripheral gas flow path 121. The flow meter or pressure meter is configured to be able to detect the flow rate or pressure value of the gas in the peripheral gas flow path 121.

[0045] In the mounting table 11 according to this embodiment, the gas holes 120 are provided in the second substrate support region 112, and therefore do not overlap with the substrate W normally placed in the first substrate support region 111 in plan view.

[0046] On the other hand, in one example state, the substrate W may not be placed correctly in the first substrate support region 111, but may be placed protruding into the second substrate support region 112. Figures 6 and 7 are a longitudinal cross-sectional view and a plan view showing an example state in which the substrate W is placed protruding into the second substrate support region 112. This state in which the substrate W is not placed correctly in the first substrate support region 111, but is placed protruding into the second substrate support region 112, is referred to as a state in which "substrate misalignment" has occurred.

[0047] 6 and 7 , when the substrate is misaligned, at least a portion of the substrate W overlaps with the gas hole 120 in a plan view. In this case, the overlapping portion prevents gas from being discharged from the gas hole 120 into the processing space S. When gas is prevented from being discharged from the gas hole 120 into the processing space S, the gas flow rate in the peripheral gas flow path 121 decreases or the gas pressure increases. In one embodiment, the flow rate controller 122 performs feedback control so that the gas flow rate in the peripheral gas flow path 121 becomes equal to the planned flow rate value of the control target. Therefore, when gas is prevented from being discharged from the gas hole 120 into the processing space S, feedback control is performed so that the gas flow rate in the peripheral gas flow path 121 does not decrease, and as a result, the gas pressure in the peripheral gas flow path 121 increases.

[0048] 6 and 7, the substrate W may also overlap the partition wall 14 in plan view. In this case, as shown in Fig. 8, when the partition wall 14 is raised from the retracted position to the substrate processing position in the direction of the thick arrow, the substrate W may come into contact with the partition wall 14 at position C where they overlap in plan view. Contact between the substrate W and the partition wall 14 may cause problems such as damage to the substrate W and contamination of the inside of the processing apparatus including the partition wall 14.

[0049] <Modification of Mounting Table> A mounting table 200 according to a modification of this embodiment will be described with reference to FIG. 9 . FIG. 9 is a plan view showing an outline of the configuration of the mounting table 200 according to the modification of this embodiment. In this modification, three gas holes 201 are provided scattered throughout the second substrate support region 112 at positions that are rotationally symmetrical about the center of the mounting table 200. Peripheral gas flow paths 202 are connected to the three gas holes 201, respectively. The three peripheral gas flow paths 202 join near the center of the mounting table 200 and are connected to the gas source 115.

[0050] In this modification, a gas detector is provided in each of the peripheral gas flow paths 202 connected to the three gas holes 201. The gas detector is a desired flow rate controller. In another embodiment, the gas detector is a flow meter or a pressure meter configured to detect the flow rate or pressure value of the gas in each of the peripheral gas flow paths 202.

[0051] In this modification, the number of gas holes 201 is three, but is not limited to this. The arrangement of the gas holes 201 is not limited to the example shown in the figure, and can be any arrangement desired in light of the number of gas holes 201.

[0052] <Substrate Processing Method> A substrate processing method according to this embodiment, which can be performed using the substrate processing apparatus 1 described above, will now be described with reference to Fig. 10. Fig. 10 is a flowchart showing an outline of the configuration of the substrate processing method according to this embodiment. The substrate processing method is configured to be able to detect positional deviation of the substrate during the period from when the substrate is placed on the substrate support surface until the start of substrate processing, and includes the following steps ST11 to ST23.

[0053] In step ST11, with the partition wall 14 in the retracted position, the substrate W is placed on the mounting table 11. For example, the substrate W is introduced into the chamber 10 from outside by a desired transfer device. In this case, the transfer device is controlled with the goal of placing the substrate W on the first substrate support region 111 of the electrostatic chuck 102.

[0054] In step ST12, the peripheral gas supply unit starts supplying gas to the gas holes 120. The gas supply is controlled by the flow rate controller 122 so that the gas reaches a desired planned flow rate.

[0055] In process ST13, a pressure value of the gas is acquired by a pressure gauge serving as a gas detector provided in the flow rate controller 122, and the acquired pressure value is compared with a planned pressure value. The planned pressure value may be acquired in advance and stored, and read in process ST13. As an example, the planned pressure value may be a pressure value acquired by the pressure gauge of the flow rate controller 122 when gas is supplied so as to achieve the planned flow rate value in the peripheral gas supply unit without the substrate W placed thereon. Furthermore, the planned pressure value may include a desired error range that includes a measurement error.

[0056] In one embodiment, in process ST14, if the pressure value in process ST13 is outside the range of expected pressure values, it is determined that the substrate W was not placed in a normal position on the mounting table 11, and positional deviation correction is performed. In process ST14, the positional deviation correction is performed, for example, by lifting the substrate W by a desired transport device and determining the position where the substrate W should be placed in consideration of the positional deviation. After performing process ST14, the process returns to process ST11.

[0057] In another embodiment, if the pressure value in step ST13 is outside the range of expected pressure values, it is determined that the substrate W was not placed in a normal position on the mounting table 11, and the substrate processing method is terminated.

[0058] In step ST15, if the pressure value in step ST13 is within the range of the expected pressure value, it is determined that the substrate W has been placed in a normal position on the mounting table 11, and the partition wall 14 is raised from the retracted position to the substrate processing position. In one embodiment, the pressure value is continuously detected even while the partition wall 14 is being raised in step ST15, and the positional deviation of the substrate is monitored in step ST13.

[0059] In step ST16, after the partition wall 14 reaches the substrate processing position, the supply of gas to the gas holes 120 in the peripheral gas supply unit is stopped.

[0060] In step ST17, the electrostatic chuck 102 starts to electrostatically attract the substrate W.

[0061] In process ST18, while the substrate W is adsorbed and supported by the electrostatic chuck 102, the back surface gas supply section starts supplying heat transfer gas to the gap 113 between the back surface of the substrate W and the first substrate support region 111.

[0062] In process ST19, the pressure value of the heat transfer gas supplied to the gap 113 between the backside of the substrate W and the first substrate support region 111 in the backside gas supply unit is acquired and compared with the expected pressure value of the heat transfer gas. In one embodiment, the pressure value of the heat transfer gas is acquired by a pressure gauge provided in the flow rate controller 116. Note that the determination of the expected pressure value of the heat transfer gas and the comparison of the pressure value of the heat transfer gas with the expected pressure value of the heat transfer gas may be performed by a known method. If the pressure value of the heat transfer gas in process ST19 is outside the range of the expected pressure values ​​of the heat transfer gas, it is determined that the substrate W was not placed in the normal position on the mounting table 11, and the substrate processing method is terminated.

[0063] In process ST20, if the pressure value of the heat transfer gas in process ST19 is within the range of the expected pressure value of the heat transfer gas, it is determined that the substrate W has been placed in a normal position on the mounting table 11, and substrate processing is performed.

[0064] In step ST21, it is determined whether or not to continue substrate processing based on a predetermined recipe, etc. If substrate processing is to be continued, the process returns to step ST20. If substrate processing is not to be continued, the process proceeds to step ST22.

[0065] In step ST22, the supply of the heat transfer gas from the backside gas supply unit to the gap 113 between the backside of the substrate W and the first substrate support region 111 is terminated.

[0066] In step ST23, the electrostatic attraction of the substrate W on the electrostatic chuck 102 is completed. After step ST23 is performed, the substrate processing method is completed.

[0067] The technical significance of the main steps in the substrate processing method according to this embodiment will be described below.

[0068] As described above, in the backside gas supply unit, it is possible to detect the positional deviation of the substrate W while the substrate W is attracted and supported by the electrostatic chuck 102 (steps ST18 and ST19). On the other hand, it is not possible to detect the positional deviation of the substrate W in the backside gas supply unit during the period from when the substrate is placed on the mounting table 11 in step ST11 until when the substrate W is attracted and supported by the electrostatic chuck 102 in step ST17. In particular, in step ST15, if the positional deviation of the substrate W cannot be detected when the partition wall 14 is raised, the substrate W may come into contact with the partition wall 14 at position C where they overlap in a plan view, as described in FIG. 8 .

[0069] In contrast, in the substrate processing method according to this embodiment, the peripheral gas supply unit is used to detect the positional deviation of the substrate W through steps ST12 to ST16. This makes it possible to detect the positional deviation of the substrate W particularly before the partition wall 14 is raised in step ST15, and to correct the positional deviation of the substrate W in step ST14 or to terminate the subsequent steps. As a result, damage to the substrate W due to contact between the substrate W and the partition wall 14 and contamination of the inside of the processing apparatus can be avoided.

[0070] Hereinafter, a case will be described in which the substrate processing apparatus 1 including the mounting table 200 according to the modified example shown in FIG. 9 is used to determine the positional deviation of the substrate W in the process ST13 and to correct the positional deviation in the process ST14.

[0071] In process ST13, the gas flow rate or pressure is detected by each of the gas detectors in the three peripheral gas flow paths 202 provided in the mounting table 200. As an example, assume that the flow rate or pressure value of one gas detector is outside the range of the expected flow rate or expected pressure value, while the flow rate or pressure values ​​of the other two gas detectors are within the range of the expected flow rate or expected pressure value. In this case, it can be determined that the substrate W overlaps, in a plan view, one gas hole 201 to which the peripheral gas flow path 202 in which the one gas detector is provided is connected. At the same time, it can be determined that the substrate W does not overlap the other two gas holes 201 to which the peripheral gas flow paths 202 in which the other two gas detectors are provided are connected.

[0072] In process ST14, the positional deviation correction is a correction that moves the position of the substrate W in the opposite direction of the one gas hole 201 that is determined to have the substrate W overlapping, and in the direction of the other two gas holes 201 that are determined to have the substrate W overlapping.

[0073] By performing the positional deviation correction in steps ST13 and ST14 using the substrate processing apparatus 1 equipped with the mounting table 200 according to the modified example shown in FIG. 9, the positional deviation of the substrate W can be corrected more appropriately.

[0074] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0075] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0076] Note that the following configuration examples also fall within the technical scope of the present disclosure: (1) A substrate processing apparatus for processing a substrate, comprising: a chamber that airtightly accommodates the substrate, at least one mounting table that supports the substrate in the chamber, an electrostatic chuck that is provided on the mounting table and includes: a first substrate support region that is a normal position where the substrate is supported, and a second substrate support region that is a peripheral region that surrounds the first substrate support region in a plan view, and a peripheral gas supply unit that includes: gas holes that are provided in the second substrate support region, a gas flow path connected to the gas holes, a gas source that supplies the gas to the gas holes via the gas flow path, and a gas detector that detects a flow rate or pressure of the gas in the gas flow path. (2) The substrate processing apparatus according to (1), further comprising: (a) a control unit that executes control including: (a) starting the supply of the gas to the gas holes in the peripheral gas supply unit with the substrate placed on the electrostatic chuck; (b) detecting a flow rate or pressure of the gas with the gas detection unit, and comparing the value of the gas flow rate or pressure with a planned flow rate or planned pressure value of the gas; and (c) determining that misalignment of the substrate has occurred when the value of the gas flow rate or pressure is outside the planned flow rate or planned pressure value of the gas. (3) The substrate processing apparatus according to (1) or (2), further comprising: partition walls that are arranged in the chamber and surround the respective outer peripheries of the mounting tables at intervals; and a lifting mechanism that lifts and lowers the partition walls between a retracted position and a substrate processing position. (4) The substrate processing apparatus according to (3), wherein the control unit further executes control including: (d) correcting the positional deviation of the substrate before raising the partition wall from the retracted position to the substrate processing position when it is determined that the positional deviation of the substrate has occurred in the step (c). (5) The substrate processing apparatus according to any one of (1) to (4), wherein the gas hole is provided in an annular shape in the second substrate support region. (6) The substrate processing apparatus according to any one of (1) to (5), wherein the gas hole is provided in a plurality of scattered positions in the second substrate support region.(7) The substrate processing apparatus according to (6), wherein the gas detection unit is provided in each of the flow paths connected to the gas holes, (8) The substrate processing apparatus according to any one of (1) to (7), wherein the peripheral gas supply unit includes a gas adjustment unit that adjusts the flow rate or pressure of the gas in the gas flow path, and the gas adjustment unit includes the gas detection unit. (9) A substrate processing method for processing a substrate using a substrate processing apparatus, the substrate processing apparatus comprising: a chamber that airtightly accommodates the substrate; at least one mounting table that supports the substrate in the chamber; an electrostatic chuck that is provided on the mounting table and includes: a first substrate support region that is a normal position where the substrate is supported; and a second substrate support region that is a peripheral region that surrounds the first substrate support region in a plan view; and a peripheral gas supply unit that includes: gas holes that are provided in the second substrate support region, a gas flow path connected to the gas holes, a gas source that supplies the gas to the gas holes via the gas flow path, and a gas detection unit that detects a flow rate or a pressure of the gas in the gas flow path, the substrate processing method comprising: (a) starting the supply of the gas to the gas holes in the peripheral gas supply unit while the substrate is placed on the electrostatic chuck; (b) detecting the flow rate or pressure of the gas with the gas detection unit, and comparing the value of the flow rate or pressure of the gas with a planned flow rate value or a planned pressure value of the gas; (c) determining that the substrate has shifted in position when the flow rate or pressure value of the gas is outside the range of a planned flow rate value or a planned pressure value of the gas.

[0077] REFERENCE SIGNS LIST 1 substrate processing apparatus 10 chamber 11 mounting table 102 electrostatic chuck 111 first substrate support region 112 second substrate support region 120 gas hole 121 peripheral gas flow path 122 flow rate controller W substrate

Claims

1. A substrate processing apparatus for processing a substrate, comprising: a chamber for airtightly accommodating the substrate; at least one mounting table for supporting the substrate within the chamber; an electrostatic chuck provided on the mounting table and including a first substrate support region as a normal position where the substrate is supported, and a second substrate support region as a peripheral region surrounding the first substrate support region in a plan view; and a peripheral gas supply unit including a gas hole provided in the second substrate support region, a gas flow path connected to the gas hole, a gas source for supplying gas to the gas hole via the gas flow path, and a gas detection unit for detecting a flow rate or pressure of the gas in the gas flow path.

2. A substrate processing apparatus as described in claim 1, further comprising a control unit which executes control including: (a) starting the supply of gas to the gas holes in the peripheral gas supply unit while the substrate is placed on the electrostatic chuck; (b) detecting the gas flow rate or pressure with the gas detection unit and comparing the value of the gas flow rate or pressure with a planned flow rate value or planned pressure value of the gas; and (c) determining that a positional deviation of the substrate has occurred if the value of the gas flow rate or pressure is outside the range of the planned flow rate value or planned pressure value of the gas.

3. The substrate processing apparatus according to claim 2, further comprising: partitions disposed within the chamber and surrounding the outer peripheries of the respective mounting stages at a distance; and a lifting mechanism for raising and lowering the partitions between a retracted position and a substrate processing position.

4. The substrate processing apparatus of claim 3, wherein the control unit further executes control including: (d) a step of correcting the positional misalignment of the substrate before raising the partition from the retracted position to the substrate processing position when it is determined that the substrate has been misaligned in the step (c).

5. The substrate processing apparatus according to claim 1, wherein the gas hole is provided so as to extend in an annular shape in the second substrate support region.

6. The substrate processing apparatus according to claim 1, wherein a plurality of the gas holes are provided at different locations in the second substrate supporting region.

7. The substrate processing apparatus according to claim 6, wherein the gas detector is provided in each of the gas flow paths connected to the gas holes, respectively.

8. A substrate processing apparatus according to any one of claims 1 to 4, wherein the peripheral gas supply unit includes a gas regulator that regulates the flow rate or pressure of the gas in the gas flow path, and the gas regulator includes the gas detector.

9. A substrate processing method for processing a substrate using a substrate processing apparatus, the substrate processing apparatus comprising: a chamber for airtightly accommodating the substrate; at least one mounting table for supporting the substrate within the chamber; an electrostatic chuck provided on the mounting table and including a first substrate supporting region as a normal position where the substrate is supported, and a second substrate supporting region as a peripheral region surrounding the first substrate supporting region in a plan view; and a peripheral gas supply unit including gas holes provided in the second substrate supporting region, a gas flow path connected to the gas holes, a gas source for supplying gas to the gas holes via the gas flow path, and a gas detection unit for detecting a flow rate or a pressure of the gas in the gas flow path, the substrate processing method comprising: (a) a step of starting a supply of the gas to the gas holes in the peripheral gas supply unit while the substrate is placed on the electrostatic chuck; (b) a step of detecting a flow rate or a pressure of the gas by the gas detection unit, and comparing a value of the gas flow rate or pressure with a planned flow rate value or a planned pressure value of the gas; (c) determining that a positional deviation of the substrate has occurred if the flow rate or pressure value of the gas is outside a range of a planned flow rate or pressure value of the gas.

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