Method for forming iii-v thin film

Abstract

The present invention relates to a method for forming a III-V thin film, comprising the steps of: spraying one or more gases containing group III elements; and spraying one or more gases containing group V elements.

Description

3-5 group thin film formation method

[0001] The present invention relates to a method for forming a group 3-5 thin film for forming a group 3-5 thin film on a substrate.

[0002] Typically, in order to manufacture semiconductor devices, solar cells, display devices, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes are performed, such as a deposition process that deposits a thin film of a specific material on the substrate, a photo process that selectively exposes the thin film using a photosensitive material, and an etching process that removes the thin film in the selectively exposed portion to form a pattern.

[0003] Recently, there has been a growing demand for the use of group III-V thin films in fields such as semiconductor devices, solar cells, and display devices, and accordingly, the development of technology for forming group III-V thin films on substrates is required.

[0004] The present invention has been devised to solve the above-described needs, and provides a method for forming a group 3-5 thin film capable of forming a group 3-5 thin film on a substrate.

[0005] In order to solve the above-described problem, the present invention may include the following configuration.

[0006] A method for forming a group 3-5 thin film according to the present invention is a method for forming a group 3-5 thin film in a chamber including an upper dome, a lower dome, and a heating unit, and may include a step of injecting one or more gases containing a group 3 element; and a step of injecting one or more gases containing a group 5 element.

[0007] A method for forming a group 3-5 thin film according to the present invention is a method for forming a group 3-5 thin film in a chamber including an upper dome, a lower dome, and a heating unit, and may include a step of injecting one or more gases including a group 3 element and one or more gases including a group 5 element.

[0008] A method for forming a group 3-5 thin film according to the present invention comprises a first plate including a first gas supply port and a second gas supply port, a second plate electrically insulated from the first plate and spaced apart from the first plate and having a plurality of openings arranged in an alternating manner with respect to each of the first gas supply port and the second gas supply port, and a turbo molecular pump, the method comprising: a step of injecting one or more gases including a group 3 element; and a step of injecting one or more gases including a group 5 element.

[0009] A method for forming a group 3-5 thin film according to the present invention is a method for forming a group 3-5 thin film in a chamber including a first plate including a first gas supply port and a second gas supply port, a second plate electrically insulated from the first plate and spaced apart from the first plate and having a plurality of openings arranged in an alternating manner with respect to each of the first gas supply port and the second gas supply port, and a turbo molecular pump, the method may include a step of injecting one or more gases including a group 3 element and one or more gases including a group 5 element.

[0010] According to the present invention, the following effects can be achieved.

[0011] The present invention can be implemented to form a Group 3-5 thin film on a substrate by spraying together one or more gases containing a Group 3 element and one or more gases containing a Group 5 element. Accordingly, the present invention can increase the productivity of a substrate on which a Group 3-5 thin film is formed.

[0012] The present invention can be implemented to form a Group 3-5 thin film on a substrate by sequentially injecting one or more gases containing a Group 3 element and one or more gases containing a Group 5 element. Accordingly, the present invention can improve the quality of a substrate on which a Group 3-5 thin film is formed.

[0013] Figure 1 is a schematic cross-sectional view of a substrate on which a group 3-5 thin film is formed using a group 3-5 thin film forming method according to the present invention.

[0014] Figure 2 is a schematic diagram showing an embodiment of a substrate processing device in which a 3-5 group thin film forming method according to the present invention is performed.

[0015] Figure 3 is a schematic diagram showing another embodiment of a substrate processing device in which a 3-5 group thin film forming method according to the present invention is performed.

[0016] Fig. 4 is a schematic bottom view showing an enlarged view of the injection part based on part A of Fig. 3 in the substrate processing device illustrated in Fig. 3.

[0017] Fig. 5 is a schematic cross-sectional view showing an enlarged view of the injection part based on part A of Fig. 3 in the substrate processing device illustrated in Fig. 3.

[0018] FIG. 6 is a schematic side cross-sectional view showing an enlarged view of the spraying section based on part A of FIG. 3 in another embodiment of a substrate processing device in which a 3-5 group thin film forming method according to the present invention is performed.

[0019] Figure 7 is a schematic bottom view of an injection unit that injects gas in a method for forming a 3-5 group thin film according to the present invention.

[0020] Figures 8 and 9 are schematic flowcharts of a method for forming a 3-5 group thin film according to the present invention.

[0021] Hereinafter, embodiments of a method for forming a 3-5 group thin film according to the present invention will be described in detail with reference to the attached drawings. In describing embodiments of the present invention, when it is described that a structure is formed "on" or "below" another structure, such description should be interpreted to include not only cases where the structures are in contact with each other, but also cases where a third structure is interposed between the structures.

[0022] Referring to Fig. 1, the method for forming a group 3-5 thin film according to the present invention is for forming a group 3-5 thin film (110) on a substrate (100). The substrate (100) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The group 3-5 thin film (110) may be provided in a semiconductor element, a display device, a solar cell, or the like.

[0023] The method for forming a group 3-5 thin film according to the present invention can be performed by a substrate processing device (1) according to various embodiments. Before describing an embodiment of the method for forming a group 3-5 thin film according to the present invention, embodiments of the substrate processing device (1) will be described in detail with reference to the attached drawings.

[0024] Referring to Fig. 2, the substrate processing device (1) according to the first embodiment may include a chamber (2). A processing process for the substrate (100) may be performed inside the chamber (2). The chamber (2) may include an upper dome (21) and a lower dome (22).

[0025] The upper dome (21) may be arranged above the lower dome (22). The upper dome (21) may block the upper side of the processing space (20). The processing space (20) may be a space arranged inside the chamber (2). A processing process for the substrate (100) may be performed in the processing space (20). The upper dome (21) may be formed of quartz. The upper dome (21) may be formed in a dome shape with an open lower side overall.

[0026] The lower dome (22) may be placed below the upper dome (21). The lower dome (22) may block the lower side of the processing space (20). The lower dome (22) may be formed of quartz. The lower dome (22) may be formed in a form in which the upper side is open. An exhaust part (221) for exhausting gas, impurities, etc. from the processing space (20) may be provided in the lower dome (22). The exhaust part (221) may include a turbo molecular pump (TMP) (222). The chamber (2) including the turbo molecular pump (222) may be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0027] The chamber (2) may include a heating unit (23). The heating unit (23) may heat the substrate (100) located inside the chamber (2). The heating unit (23) may also heat the substrate (100) by heating the processing space (20). The heating unit (23) may include a plurality of lamp heaters. The lamp heaters may heat the substrate (100) by emitting heating light toward the processing space (20). The heating unit (23) may be disposed on the outside of the lower dome (22). The heating unit (23) may also be disposed on the outside of the upper dome (21).

[0028] The chamber (2) may include a chamber body (24). The chamber body (24) may be positioned between the upper dome (21) and the lower dome (22). The upper dome (21) and the lower dome (22) may each be coupled to the chamber body (24).

[0029] A substrate support unit (3) may be installed in the chamber (2). The substrate support unit (3) may support one or more substrates (100). A processing process for the substrate (100) may be performed while the substrate (100) is supported by the substrate support unit (3) and positioned in the processing space (20). A driving unit (31) may be coupled to the substrate support unit (3). The driving unit (31) may raise and lower the substrate support unit (3). The driving unit (31) may also rotate the substrate support unit (3).

[0030] An injection unit (4) may be installed in the chamber (2). The injection unit (4) may inject gas. Using the gas injected by the injection unit (4), a processing process for the substrate (100) may be performed. The injection unit (4) may inject gas into the processing space (20). The injection unit (4) may inject gas toward the substrate support unit (3).

[0031] The above-described injection unit (4) may include a first injection unit (41) and a second injection unit (42). The first injection unit (41) may inject a first gas. The second injection unit (42) may inject a second gas. The first gas and the second gas may be different types of gases. When the first gas is a source gas, the second gas may be a reactant gas. The first injection unit (41) and the second injection unit (42) may inject gases toward different parts of the substrate support unit (3). The first injection unit (41) may include a first path for injecting the first gas. The second injection unit (42) may include a second path for injecting the second gas. In this case, the substrate processing device (1) according to the first embodiment may be implemented to include an injection unit (4) having the first path and the second path above the chamber (2). The first path and the second path may be spatially separated so that the first gas and the second gas are not mixed before being injected into the processing space (20).

[0032] The first injection unit (41) may be connected to the first supply unit (51). The first supply unit (51) may store the first gas and supply the first gas to the first injection unit (41). The first injection unit (41) may be connected to a pile-up tank (52). The pile-up tank (52) may be filled with the first gas and may temporarily inject the first gas into the processing space (20) through the first injection unit (41). The pile-up tank (52) may be connected to each of the first supply unit (51) and the first injection unit (41) between the first supply unit (51) and the first injection unit (41). The first supply unit (51) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the first injection unit (41).

[0033] The second injection unit (42) may be connected to a second supply unit (53). The second supply unit (53) may store the second gas and supply the second gas to the second injection unit (42). The second injection unit (42) may be connected to a pile-up tank (54). The pile-up tank (54) may fill the second gas and temporarily inject the second gas into the processing space (20) through the second injection unit (42). The pile-up tank (54) may be connected to each of the second supply unit (53) and the second injection unit (42) between the second supply unit (53) and the second injection unit (42). The second supply unit (53) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the second injection unit (42).

[0034] An antenna (6) may be installed in the chamber (2). The antenna (6) may be used to form plasma in the processing space (20). The antenna (6) may include a coil that induces an electric field inside the chamber (2) to form plasma. The antenna (6) may be placed outside the upper dome (21). The antenna (6) may be coupled to the upper surface of the upper dome (21).

[0035] The antenna (6) may be connected to a power supply (61). The power supply (61) may apply RF (Radio Frequency) power to the antenna (6). Accordingly, the antenna (6) may form plasma inside the chamber (2). In this case, the injection unit (4) may inject a gas for forming plasma into the processing space (20). For example, the injection unit (4) may inject hydrogen (H2) or argon (Ar).

[0036] Referring to FIGS. 3 to 5, the substrate processing device (1) according to the second embodiment may include a chamber (2). A processing process for the substrate (100) may be performed inside the chamber (2).

[0037] The chamber (2) may include an injection unit (4). The injection unit (4) may inject gas. Using the gas injected by the injection unit (4), a processing process for the substrate (100) may be performed. The processing process for the substrate (100) may be performed in a processing space (20) arranged inside the chamber (2). The injection unit (4) may inject gas into the processing space (20).

[0038] The above-mentioned injection unit (4) can inject gas toward the substrate support unit (3). The substrate support unit (3) can support one or more substrates (100). A processing process for the substrate (100) can be performed while the substrate (100) is supported by the substrate support unit (3) and positioned in the processing space (20). A driving unit (31) can be coupled to the substrate support unit (3). The driving unit (31) can raise and lower the substrate support unit (3). The driving unit (31) can also rotate the substrate support unit (3).

[0039] The above injection unit (4) may include a first plate (43) and a second plate (44).

[0040] The first plate (43) may be arranged on the upper side of the second plate (44). The first plate (43) may include a first gas supply port (431) and a second gas supply port (432). The first gas supply port (431) may function as a passage for the first gas to flow. The first gas supply port (431) may be formed by penetrating the first plate (43). The first gas supply port (431) may correspond to a first path for supplying the first gas. The first plate (43) may include a plurality of first gas supply ports (431). In this case, the first gas supply ports (431) may be arranged at positions spaced apart from each other. The second gas supply port (432) may function as a passage for the second gas to flow. The second gas supply port (432) may be formed by penetrating the first plate (43). The second gas supply port (432) may correspond to a second path for supplying the second gas. The first plate (43) may include a plurality of second gas supply ports (432). In this case, the second gas supply ports (432) may be arranged at positions spaced apart from each other. The lower surface of the first plate (43) may be formed flat.

[0041] The first gas supply port (431) may be connected to the first supply unit (51). The first supply unit (51) may store the first gas and supply the first gas to the first injection unit (41). The first injection unit (41) may be connected to a pile-up tank (52). The pile-up tank (52) may be filled with the first gas and may temporarily inject the first gas into the processing space (20) through the first injection unit (41). The pile-up tank (52) may be connected to each of the first supply unit (51) and the first injection unit (41) between the first supply unit (51) and the first injection unit (41). The first supply unit (51) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the first injection unit (41).

[0042] The second injection unit (42) may be connected to a second supply unit (53). The second supply unit (53) may store the second gas and supply the second gas to the second injection unit (42). The second injection unit (42) may be connected to a pile-up tank (54). The pile-up tank (54) may fill the second gas and temporarily inject the second gas into the processing space (20) through the second injection unit (42). The pile-up tank (54) may be connected to each of the second supply unit (53) and the second injection unit (42) between the second supply unit (53) and the second injection unit (42). The second supply unit (53) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the second injection unit (42).

[0043] The second plate (44) may be arranged on the lower side of the first plate (43). The second plate (44) may be arranged spaced apart from the first plate (43). The second plate (44) may include a plurality of openings (441). The openings (441) may be formed by penetrating the second plate (44). The openings (441) may be arranged at positions spaced apart from each other. The openings (441) may be arranged to be staggered with respect to the first gas supply port (431) and the second gas supply port (432). In this case, the openings (441) may be arranged at positions spaced apart from the vertically downward direction of the first gas supply port (431) and the vertically downward direction of the second gas supply port (432). That is, the openings (441) may be arranged so as not to overlap with the first gas supply port (431) and the second gas supply port (432). Accordingly, the first gas supply port (431) may inject the first gas toward the upper surface of the second plate (44). The second gas supply port (432) may inject the second gas toward the upper surface of the second plate (44).

[0044] The above-mentioned injection unit (4) can form plasma using the second plate (44) and the first plate (43). In this case, power, such as RF power, may be applied to the first plate (43), and the second plate (44) may be grounded. The first plate (43) may be grounded, and power may be applied to the second plate (44).

[0045] Meanwhile, the chamber (2) may include a turbo molecular pump (222). The turbo molecular pump (222) may control the pressure inside the chamber (2). The turbo molecular pump (222) may be connected to an exhaust unit (221) provided in the chamber (2). The turbo molecular pump (222) may control the pressure inside the chamber (2) by sucking a gas or the like from inside the chamber (2) through the exhaust unit (221). The chamber (2) including the turbo molecular pump (222) may be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0046] Referring to FIGS. 3 to 6, the substrate processing device (1) according to the third embodiment differs from the substrate processing device (1) according to the second embodiment described above in that the injection unit (4) further includes a protruding member (433). In this case, since the remaining components except for the protruding member (433) are roughly the same as those described in the substrate processing device (1) according to the second embodiment described above, a detailed description thereof will be omitted, and the protruding member (433) will be described in detail with reference to the attached drawings.

[0047] The above-mentioned protruding member (433) can be coupled to the first plate (43). The protruding member (433) can protrude from the lower surface of the first plate (43) toward the second plate (44). The first gas supply port (431) can be formed by penetrating both the first plate (43) and the protruding member (433). The protruding member (433) and the first plate (43) can also be formed integrally.

[0048] A plurality of the protruding members (433) may be combined with the first plate (43). The protruding members (433) may be arranged at positions corresponding to each of the openings (441). The protruding members (433) may be formed to have a length so as to be inserted into each of the openings (441). The protruding members (433) may also be formed to have a length so as to be arranged above each of the openings (441). The protruding members (433) may also be formed to have a length so as to protrude downward from the second plate (44). When the protruding members (433) having the first gas supply ports (431) formed therein are provided, each of the openings (441) may be arranged to overlap the first gas supply ports (431). Each of the above openings (441) can be arranged to be staggered from the second gas supply port (432).

[0049] Referring to FIGS. 2 to 7, in the substrate processing apparatus (1) according to the second and third embodiments, the injection unit (4) can inject gas through both the first area (FA) and the second area (SA) arranged inside the first area (FA). That is, the injection unit (4) can be implemented as a full-surface injection structure. In this case, the injection unit (4) can be implemented so that the first gas supply port (431), the second gas supply port (432), and the opening (441) are arranged in both the first area (FA) and the second area (SA). The injection unit (4) can also inject gas only through the first area (FA) excluding the second area (SA). In this case, the injection unit (4) may be implemented so that the first gas supply port (431), the second gas supply port (432), and the opening (441) are disposed only in the first region (FA). The first gas supply port (431), the second gas supply port (432), and the opening (441) may not be disposed in the second region (SA). The second region (SA) may be an area corresponding to an area where the rotational axis (3a) of the substrate support member (3) is included. The first region (FA) may be disposed so as to surround the outer side of the second region (SA). When the second region (SA) is formed in a circular shape, the first region (FA) may be formed in a circular ring shape with an empty inner side. When the second region (SA) is formed in a square shape, the first region (FA) may be formed in a square ring shape with an empty inner side. Meanwhile, the six circles indicated by dotted lines within the first area (FA) in FIG. 7 indicate the positions of the substrate (100) supported on the substrate support member (3).

[0050] The method for forming a group 3-5 thin film according to the present invention can be performed using the substrate processing device (1) according to the first to third embodiments. When the substrate processing device (1) according to the first embodiment is used, the method for forming a group 3-5 thin film according to the present invention can form a group 3-5 thin film (110) in the chamber (2) including the upper dome (21), the lower dome (22), and the heating unit (23). When using the substrate processing device (1) according to the second embodiment or the substrate processing device (1) according to the third embodiment, the method for forming a group 3-5 thin film according to the present invention can form the group 3-5 thin film (110) in the chamber (2) including the first plate (43) including the first gas supply port (431) and the second gas supply port (432), the second plate (44) electrically insulated from the first plate (43) and spaced apart from the first plate (43) and having the openings (441) arranged alternately with each of the first gas supply port (431) and the second gas supply port (432), and the turbo molecular pump (222).

[0051] Referring to FIGS. 1 to 9, the method for forming a 3-5 group thin film according to the present invention may include the following steps.

[0052] First, gas is injected (S10). This step (S10) can be performed by having the injection unit (4) inject gas into the interior of the chamber (2). Prior to the step (S10) of injecting the gas, a step of preparing a substrate can be performed. The step of preparing the substrate can be performed by placing the substrate (100) on the substrate support unit (3).

[0053] The step of injecting the gas (S10) may include a step of injecting one or more gases containing a Group 3 element (S11) [hereinafter referred to as the 'step of injecting the first gas (S11)'], and a step of injecting one or more gases containing a Group 5 element (S12) [hereinafter referred to as the 'step of injecting the second gas (S12)'].

[0054] The step (S11) of injecting the first gas may be performed by injecting one or more gases containing the Group 3 elements. The step (S11) of injecting the first gas may be performed by the first injector (41) injecting one or more gases containing the Group 3 elements through the first path. In this case, the method for forming a Group 3-5 thin film according to the present invention may be performed using the substrate processing apparatus (1) according to the first embodiment. The step (S11) of injecting the first gas may be performed by the injector (4) injecting one or more gases containing the Group 3 elements through the first gas supply port (431). In this case, the method for forming a Group 3-5 thin film according to the present invention may be performed using the substrate processing apparatus (1) according to the second embodiment or the substrate processing apparatus (1) according to the third embodiment. One or more gases containing the elements of the above group 3 can be injected into the processing space (20) through the first gas supply port (431) and the opening (441).

[0055] The step (S12) of injecting the second gas may be performed by injecting one or more gases containing the Group 5 element. The step (S12) of injecting the second gas may be performed by the second injection unit (42) injecting one or more gases containing the Group 5 element through the second path. In this case, the method for forming a Group 3-5 thin film according to the present invention may be performed using the substrate processing apparatus (1) according to the first embodiment. The step (S12) of injecting the second gas may be performed by the injection unit (4) injecting one or more gases containing the Group 5 element through the second gas supply port (432). In this case, the method for forming a Group 3-5 thin film according to the present invention may be performed using the substrate processing apparatus (1) according to the second embodiment or the substrate processing apparatus (1) according to the third embodiment. One or more gases containing the elements of the above group 5 can be injected into the processing space (20) through the second gas supply port (432) and the opening (441).

[0056] As illustrated in FIG. 8, the method for forming a group 3-5 thin film according to the present invention can be performed in parallel with the step of injecting the first gas (S11) and the step of injecting the second gas (S12). Accordingly, the step of injecting the gas (S10) can be performed by injecting one or more gases containing the group 3 element and one or more gases containing the group 5 element together. Through this, the group 3 element and the group 5 element are implemented to react on the upper side of the substrate (100), so that the group 3-5 thin film forming method according to the present invention can form the group 3-5 thin film (110) on the substrate (100) by an atomic layer growth (ALG) method. Therefore, the method for forming a group 3-5 thin film according to the present invention can increase the speed of forming the group 3-5 thin film (110) on the substrate (100), and thus increase the productivity of the substrate (100) on which the group 3-5 thin film (110) is formed. Meanwhile, the step (S10) of injecting the gas may be performed by the first injection unit (41) injecting one or more gases containing the group 3 elements through the first path, and at the same time, the second injection unit (42) injecting one or more gases containing the group 5 elements through the second path. The step (S10) of injecting the gas may also be performed by the injection unit (4) injecting one or more gases containing the group 3 elements through the first gas supply port (431), and at the same time, injecting one or more gases containing the group 5 elements through the second gas supply port (432).

[0057] As illustrated in FIG. 9, the method for forming a group 3-5 thin film according to the present invention may include a step (S12) of injecting the second gas after the step (S11) of injecting the first gas. Accordingly, the step (S10) of injecting the gas may be performed by injecting one or more gases containing the group 3 elements and then injecting one or more gases containing the group 5 elements. Through this, after the adsorption process in which the group 3 elements are adsorbed onto the substrate (100) is performed, the group 5 elements are implemented to react with the group 3 elements adsorbed onto the substrate (100), thereby the method for forming a group 3-5 thin film according to the present invention can form the group 3-5 thin film (110) on the substrate (100) by an atomic layer deposition (ALD) method. Therefore, the method for forming a group 3-5 thin film according to the present invention can improve the film quality of the group 3-5 thin film (110) formed on the substrate (100), and thus can improve the quality of the substrate (100) on which the group 3-5 thin film (110) is formed. Meanwhile, the step (S10) of injecting the gas may be performed by the first injection unit (41) injecting one or more gases including the group 3 elements through the first path, and then the second injection unit (42) injecting one or more gases including the group 5 elements through the second path. The step (S10) of injecting the gas may also be performed by the injection unit (4) injecting one or more gases including the group 5 elements through the second gas supply port (432) after the first gas supply port (431) injecting one or more gases including the group 3 elements.

[0058] Meanwhile, in the step (S11) of injecting the first gas, the element of Group 3 may include one or more of gallium (Ga), indium (In), aluminum (Al), and boron (B). In this case, the step (S11) of injecting the first gas may be performed by injecting a gas including one or more of gallium, indium, aluminum, and boron.

[0059] Meanwhile, in the step (S12) of injecting the second gas, the Group 5 element may include one or more of arsenic (As), phosphorus (P), and antimony (Sb). In this case, the step (S12) of injecting the second gas may be performed by injecting a gas including one or more of arsenic, phosphorus, and antimony. In this case, when the Group 3 element is any one of gallium, indium, aluminum, and boron, and the Group 5 element is any one of arsenic, phosphorus, and antimony, the Group 3-5 thin film (110) may be formed by including any one of gallium phosphide (GaP), gallium arsenide (GaAs), gallium antimonide (GaSb), indium phosphide (InP), indium arsenide (InAs), indium antimonide (InSb), aluminum phosphide (AlP), aluminum arsenide (AlAs), and aluminum antimonide (AlSb). The above 3-5 group thin film (110) may be formed by laminating multiple thin film layers formed by including any one of gallium phosphide, gallium arsenide, gallium antimonide, indium phosphide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, and aluminum antimonide. In this case, the thin film layers may be formed by including different elements.

[0060] Referring to FIGS. 1 to 9, the step of injecting the gas (S10) can form plasma. The step of injecting the gas (S10) can form plasma with at least one gas among hydrogen and argon. In this case, the plasma can be formed between the injection unit (4) and the substrate (100). The plasma can also be formed inside the injection unit (4). The plasma can be formed both between the injection unit (4) and the substrate (100) and inside the injection unit (4).

[0061] As illustrated in FIG. 8, the step of injecting the gas (S10) may form plasma with at least one gas selected from hydrogen and argon while the step of injecting one or more gases containing the Group 3 element (S11) and the step of injecting one or more gases containing the Group 5 element (S12) are performed in parallel. Accordingly, the method for forming a Group 3-5 thin film according to the present invention may increase the deposition rate of the Group 3-5 thin film (110) and improve the film quality of the Group 3-5 thin film (110).

[0062] As illustrated in FIG. 9, when the step of injecting the gas (S10) is performed after the step of injecting one or more gases containing the Group 3 elements (S11), the step of injecting one or more gases containing the Group 5 elements (S12) may form plasma with at least one gas selected from hydrogen and argon. Accordingly, the method for forming a Group 3-5 thin film according to the present invention may increase the deposition rate of the Group 3-5 thin film (110) and improve the film quality of the Group 3-5 thin film (110). When the step (S12) of injecting one or more gases containing the above Group 5 elements forms plasma and injects one or more gases containing the above Group 5 elements activated by plasma, the method for forming a Group 3-5 thin film according to the present invention can form the Group 3-5 thin film (110) using a plasma-enhanced atomic layer deposition (PEALD) method.

[0063] Referring to FIGS. 1 to 9, the method for forming a 3-5 group thin film according to the present invention may include a step of forming plasma (S20) after the step of injecting the gas (S10). The step of forming plasma (S20) may be performed by forming plasma with at least one gas selected from hydrogen and argon. In this case, the plasma may be formed between the injection unit (4) and the substrate (100). The plasma may also be formed inside the injection unit (4). The plasma may be formed both between the injection unit (4) and the substrate (100) and inside the injection unit (4).

[0064] As illustrated in FIG. 8, after the step (S11) of injecting one or more gases containing the Group 3 elements and the step (S12) of injecting one or more gases containing the Group 5 elements are performed in parallel, the step (S20) of forming the plasma may be performed by forming the plasma with at least one gas selected from hydrogen and argon. Accordingly, the method for forming a Group 3-5 thin film according to the present invention can remove impurities, etc. from the Group 3-5 thin film (110) after forming the Group 3-5 thin film (110) on the substrate (100) using plasma. Therefore, the method for forming a Group 3-5 thin film according to the present invention can improve the film quality of the Group 3-5 thin film (110) formed on the substrate (100) through the step (S20) of forming the plasma. In this case, the step of forming the plasma (S20) may crystallize the 3-5 group thin film (110) formed on the substrate (100).

[0065] As illustrated in FIG. 9, when the step of injecting the gas (S10) is performed by the step of injecting one or more gases containing the Group 3 element (S11) followed by the step of injecting one or more gases containing the Group 5 element (S12), the step of forming the plasma (S20) may be performed by forming the plasma with at least one gas selected from hydrogen and argon after the step of injecting one or more gases containing the Group 5 element (S12). Accordingly, the method for forming a Group 3-5 thin film according to the present invention can remove impurities, etc. from the Group 3-5 thin film (110) after forming the Group 3-5 thin film (110) on the substrate (100) using plasma. Therefore, the method for forming a Group 3-5 thin film according to the present invention can improve the film quality of the Group 3-5 thin film (110) formed on the substrate (100) through the step of forming the plasma (S20). In this case, the step of forming the plasma (S20) may crystallize the 3-5 group thin film (110) formed on the substrate (100).

[0066] Referring to FIGS. 1 to 9, the method for forming a 3-5 group thin film according to the present invention may include a step of forming plasma (S30, illustrated in FIG. 9).

[0067] The step (S30) of forming the plasma may be performed by forming the plasma with at least one gas among hydrogen and argon. In this case, the plasma may be formed between the injection unit (4) and the substrate (100). The plasma may also be formed inside the injection unit (4). The plasma may be formed both between the injection unit (4) and the substrate (100) and inside the injection unit (4).

[0068] The step of forming the plasma (S30) may be performed by forming the plasma with at least one gas selected from hydrogen and argon between the step of injecting one or more gases containing the Group 3 element (S11) and the step of injecting one or more gases containing the Group 5 element (S12). Accordingly, the method for forming a Group 3-5 thin film according to the present invention can remove impurities, etc. from the atomic layer adsorbed on the substrate (100) using plasma before forming the Group 3-5 thin film (110) on the substrate (100). Thereafter, the method for forming a Group 3-5 thin film according to the present invention can form the Group 3-5 thin film (110) on the substrate (100) through the step of injecting one or more gases containing the Group 5 element (S12). Therefore, the method for forming a group 3-5 thin film according to the present invention can improve the film quality of the group 3-5 thin film (110) formed on the substrate (100) through the step of forming the plasma (S30). Meanwhile, the method for forming a group 3-5 thin film according to the present invention may include both the steps of forming the plasma (S20, S30).

[0069] Referring to FIGS. 1 to 9, the method for forming a 3-5 group thin film according to the present invention may include a step of controlling the pressure inside the chamber.

[0070] The step of controlling the pressure inside the chamber can be performed by controlling the pressure inside the chamber (2) by the turbo molecular pump (222). In this case, the chamber (2) including the turbo molecular pump (222) can be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less. In this way, in a state where the inside of the chamber (2) is controlled to a high vacuum pressure, at least one of the step (S11) of injecting one or more gases including the Group 3 elements and the step (S12) of injecting one or more gases including the Group 5 elements can be performed. In a state where the inside of the chamber (2) is controlled to a high vacuum pressure, at least one of the step (S20) of forming the plasma and the step (S30) of forming the plasma can also be performed.

[0071] Referring to FIGS. 1 to 9, the step (S11) of injecting one or more gases containing the Group 3 elements may be performed by injecting one or more gases containing the Group 3 elements supplied from the pile-up tank (52). Since the one or more gases containing the Group 3 elements can be injected at a higher injection pressure by the pile-up tank (52), the method for forming a Group 3-5 thin film according to the present invention can improve step coverage by allowing the Group 3 elements to deeply penetrate into the grooves formed on the substrate (100), the grooves of the lower film formed on the substrate (100), etc. Therefore, the method for forming a Group 3-5 thin film according to the present invention can further improve the film quality of the Group 3-5 thin film (110). In addition, the method for forming a Group 3-5 thin film according to the present invention can further improve the deposition rate and deposition speed of the Group 3-5 thin film (110). The pile-up tank (52) may be connected to the first gas supply port (431). In this case, the first gas supply port (431) may inject one or more gases containing the Group 3 elements supplied from the pile-up tank (52). The pile-up tank (52) may also be connected to the first injection unit (41). In this case, the first injection unit (41) may inject one or more gases containing the Group 3 elements supplied from the pile-up tank (52).

[0072] The step (S11) of injecting one or more gases containing the group 3 elements may be performed by filling the pile-up tank (52) with one or more gases containing the group 3 elements and temporarily injecting the one or more gases containing the group 3 elements through the first gas supply port (431). The step (S11) of injecting one or more gases containing the group 3 elements may be performed by filling the pile-up tank (52) with one or more gases containing the group 3 elements and temporarily injecting the one or more gases containing the group 3 elements through the first injection unit (41).

[0073] Referring to FIGS. 1 to 9, the step (S12) of injecting one or more gases containing the Group 5 elements may be performed by injecting one or more gases containing the Group 5 elements supplied from the pile-up tank (54). Since the one or more gases containing the Group 5 elements can be injected at a higher injection pressure by the pile-up tank (52), the method for forming a Group 3-5 thin film according to the present invention can improve step coverage by allowing the Group 5 elements to deeply penetrate into the grooves formed on the substrate (100), the grooves of the lower film formed on the substrate (100), etc. Therefore, the method for forming a Group 3-5 thin film according to the present invention can further improve the film quality of the Group 3-5 thin film (110). In addition, the method for forming a Group 3-5 thin film according to the present invention can further improve the deposition rate and deposition speed of the Group 3-5 thin film (110). The pile-up tank (54) may be connected to the second gas supply port (432). In this case, the second gas supply port (432) may inject one or more gases containing the Group 5 elements supplied from the pile-up tank (54). The pile-up tank (54) may also be connected to the second injection unit (42). In this case, the second injection unit (42) may inject one or more gases containing the Group 5 elements supplied from the pile-up tank (54).

[0074] The step (S12) of injecting one or more gases containing the elements of Group 5 may be performed by filling the pile-up tank (54) with one or more gases containing the elements of Group 5 and temporarily injecting the one or more gases containing the elements of Group 5 through the second gas supply port (432). The step (S12) of injecting one or more gases containing the elements of Group 5 may be performed by filling the pile-up tank (54) with one or more gases containing the elements of Group 5 and temporarily injecting the one or more gases containing the elements of Group 5 through the second injection unit (42).

[0075] Meanwhile, in the above, when the step (S11) of injecting one or more gases containing the Group 3 element and the step (S12) of injecting one or more gases containing the Group 5 element are sequentially performed, the step (S12) of injecting one or more gases containing the Group 5 element is performed after the step (S11) of injecting one or more gases containing the Group 3 element, but this is not limited thereto, and the step (S11) of injecting one or more gases containing the Group 3 element may be performed after the step (S12) of injecting one or more gases containing the Group 5 element.

[0076] The present invention described above is not limited to the above-described embodiments and the attached drawings, and it will be apparent to a person skilled in the art to which the present invention pertains that various substitutions, modifications, and changes are possible within a scope that does not depart from the technical spirit of the present invention.

Claims

1. A method for forming a 3-5 layer thin film in a chamber including an upper dome, a lower dome, and a turbo molecular pump for exhausting a processing space for processing a substrate between the upper dome and the lower dome, A step of spraying one or more gases containing a group 3 element onto the substrate; A step of spraying one or more gases containing a group 5 element onto the substrate; and A method for forming a group 3-5 thin film, comprising a step of forming a plasma with one or two gases selected from hydrogen and argon on the substrate.

2. In paragraph 1, A method for forming a group 3-5 thin film, characterized in that the group 3 element includes one or more of gallium (Ga), indium (In), aluminum (Al), and boron (B).

3. In paragraph 1, A method for forming a group 3-5 thin film, characterized in that the group 5 element includes one or more of arsenic (As), phosphorus (P), and antimony (Sb).

4. In paragraph 1, A method for forming a group 3-5 thin film, characterized in that the step of injecting one or more gases containing the above group 5 elements forms plasma with at least one gas among hydrogen (H2) and argon (Ar).

5. In paragraph 1, A method for forming a group 3-5 thin film, characterized in that it comprises a step of forming plasma with at least one gas among hydrogen (H2) and argon (Ar) between the step of injecting one or more gases containing the group 3 elements and the step of injecting one or more gases containing the group 5 elements.

6. In paragraph 1, A gas injection unit having a first path and a second path at the upper part of the chamber is included, The first path injects one or more gases containing the elements of Group 3, A method for forming a group 3-5 thin film, characterized in that the second path injects one or more gases containing the group 5 elements.

7. A method for forming a 3-5 layer thin film in a chamber including an upper dome, a lower dome, and a turbo molecular pump for exhausting a processing space for processing a substrate between the upper dome and the lower dome, A step of spraying one or more gases containing a group 3 element and one or more gases containing a group 5 element onto the substrate; and A method for forming a group 3-5 thin film, comprising a step of forming a plasma with one or two gases selected from hydrogen and argon on the substrate.

8. In paragraph 7, A method for forming a group 3-5 thin film, characterized in that the group 3 element includes one or more of gallium (Ga), indium (In), aluminum (Al), and boron (B).

9. In paragraph 7, A method for forming a group 3-5 thin film, characterized in that the group 5 element includes one or more of arsenic (As), phosphorus (P), and antimony (Sb).

10. In paragraph 7, A method for forming a group 3-5 thin film, characterized in that the step of injecting one or more gases containing the above group 3 elements and one or more gases containing the group 5 elements forms plasma with at least one gas among hydrogen (H2) and argon (Ar).

11. In paragraph 7, A gas injection unit having a first path and a second path at the upper part of the chamber is included, The first path injects one or more gases containing the elements of Group 3, A method for forming a group 3-5 thin film, characterized in that the second path injects one or more gases containing the group 5 elements.

12. In paragraph 1, A method for forming a group 3-5 thin film, characterized in that one or more gases containing the above group 3 elements are injected onto the substrate through a first plate including a first gas supply port and a second gas supply port and a second plate spaced apart from the first plate and including a plurality of openings.

13. In paragraph 12, A method for forming a 3-5 group thin film, characterized in that the chamber including the turbo molecular pump is controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

14. In paragraph 12, A method for forming a group 3-5 thin film, characterized in that the first gas supply port is connected to a pileup tank and injects one or more gases containing the group 3 elements supplied from the pileup tank.

15. In paragraph 14, A method for forming a group 3-5 thin film, characterized in that the pile-up tank is filled with one or more gases containing the group 3 elements, and one or more gases containing the group 3 elements are temporarily injected through the first gas supply port.

16. In paragraph 12, A method for forming a group 3-5 thin film, characterized in that the group 3 element includes one or more of gallium (Ga), indium (In), aluminum (Al), and boron (B).

17. In paragraph 12, A method for forming a group 3-5 thin film, characterized in that the group 5 element includes one or more of arsenic (As), phosphorus (P), and antimony (Sb).

18. In paragraph 12, A method for forming a group 3-5 thin film, characterized in that the step of injecting one or more gases containing the above group 5 elements forms plasma with at least one gas among hydrogen (H2) and argon (Ar).

19. In paragraph 12, A method for forming a group 3-5 thin film, characterized in that it comprises a step of forming plasma with at least one gas among hydrogen (H2) and argon (Ar) between the step of injecting one or more gases containing the group 3 elements and the step of injecting one or more gases containing the group 5 elements.

20. In paragraph 7, A method for forming a group 3-5 thin film, characterized in that one or more gases containing the group 3 elements and one or more gases containing the group 5 elements are sprayed onto the substrate through a first plate including a first gas supply port and a second gas supply port and a second plate spaced apart from the first plate and including a plurality of openings.

21. In paragraph 20, A method for forming a 3-5 group thin film, characterized in that the chamber including the turbo molecular pump is controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

22. In paragraph 20, A method for forming a group 3-5 thin film, characterized in that the first gas supply port is connected to a pileup tank and injects one or more gases containing the group 3 elements supplied from the pileup tank.

23. In paragraph 22, A method for forming a group 3-5 thin film, characterized in that the pile-up tank is filled with one or more gases containing the group 3 elements, and one or more gases containing the group 3 elements are temporarily injected through the first gas supply port.

24. In paragraph 20, A method for forming a group 3-5 thin film, characterized in that the group 3 element includes one or more of gallium (Ga), indium (In), aluminum (Al), and boron (B).

25. In paragraph 20, A method for forming a group 3-5 thin film, characterized in that the group 5 element includes one or more of arsenic (As), phosphorus (P), and antimony (Sb).

26. In paragraph 20, A method for forming a group 3-5 thin film, characterized in that the step of injecting one or more gases containing the above group 3 elements and one or more gases containing the group 5 elements forms plasma with at least one gas among hydrogen (H2) and argon (Ar).

27. In paragraph 20, A method for forming a group 3-5 thin film, characterized in that it comprises a step of forming plasma with at least one gas among hydrogen (H2) and argon (Ar) after the step of injecting one or more gases containing the group 3 elements and one or more gases containing the group 5 elements.

Images