Power semiconductor device

Abstract

The present disclosure provides a power semiconductor device, comprising a heat sink, a lining plate assembly, a power terminal, and an electrical connector assembly. The lining plate assembly is arranged on a first surface of the heat sink, and the lining plate assembly is arranged to form a three-level power circuit; the power terminal is located above the lining plate assembly and is electrically connected to the lining plate assembly; the electrical connector assembly is located at the end of the heat sink, and part of the structure of the power terminal extends into the electrical connector assembly. According to the present disclosure, the heat sink, the lining plate assembly, the power terminal, and the electrical connector assembly are integrated together to form the power semiconductor device, thereby achieving a high integration level.

Description

A power semiconductor device

[0001] This application claims priority to Chinese patent application CN202410236377.0, entitled “A Power Semiconductor Device,” filed on March 1, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to the field of power electronics technology, and in particular to a power semiconductor device. Background Art

[0003] Power semiconductor devices are core components of converters, widely used in rail transit, industrial frequency conversion, and other fields. Current power semiconductor devices typically have a standard, pre-packaged structure, with power terminals connected to the internal semiconductor chip or conductive layer. Typically, these devices require external development of low-inductance busbars electrically connected to the power terminals, along with supporting functional components such as heat sinks, drive circuits, and support capacitors, to create a device capable of rectifying or inverting the power supply. This results in a low level of integration.

[0004] Summary of the Invention

[0005] The embodiment of the present disclosure provides a power semiconductor device that integrates a heat sink, a liner assembly, a power terminal, and an electrical connector assembly, thereby achieving high integration.

[0006] According to an embodiment of the present disclosure, a power semiconductor device is provided, comprising a heat sink, a backing plate assembly, a power terminal and an electrical connector assembly; the backing plate assembly is arranged on a first surface of the heat sink, and a three-level power circuit is formed by the layout of the backing plate assembly; the power terminal is located above the backing plate assembly and is electrically connected to the backing plate assembly; the electrical connector assembly is located at an end of the heat sink, and a portion of the structure of the power terminal extends into the electrical connector assembly.

[0007] In one embodiment of the present disclosure, the power terminal includes a plurality of level copper bars, the plurality of level copper bars include a zero-level copper bar, a DC positive copper bar and a DC negative copper bar, the DC positive copper bar and the DC negative copper bar are arranged opposite to each other in the same horizontal plane, and the zero-level copper bar is relatively parallel and stacked with the DC positive copper bar and the DC negative copper bar.

[0008] In one embodiment of the present disclosure, the horizontal copper busbar includes a copper busbar lower pin, a copper busbar main body and a copper busbar extension. The copper busbar lower pin is electrically connected to the conductive layer of the lining assembly, the copper busbar main body is located above the lining assembly, and the copper busbar extension extends into the electrical connector assembly.

[0009] In one embodiment of the present disclosure, the horizontal copper busbar further includes a copper busbar through-portion, and the copper busbar main body is connected to the copper busbar extension portion through the copper busbar through-portion.

[0010] In one embodiment of the present disclosure, the zero-level copper busbar includes a zero-level copper busbar lower pin, a zero-level copper busbar main body, a zero-level copper busbar through-portion, and a zero-level copper busbar extension; the DC positive copper busbar includes a DC positive copper busbar lower pin, a DC positive copper busbar main body, a DC positive copper busbar through-portion, and a DC positive copper busbar extension; the DC negative copper busbar includes a DC negative copper busbar lower pin, a DC negative copper busbar main body, a DC negative copper busbar through-portion, and a DC negative copper busbar extension.

[0011] In one embodiment of the present disclosure, the main body of the zero-level copper bar, the main body of the DC positive copper bar, and the main body of the DC negative copper bar are all parallel to the first surface of the radiator; and / or, the extension portion of the zero-level copper bar, the extension portion of the DC positive copper bar, and the extension portion of the DC negative copper bar are all parallel to the first surface of the radiator.

[0012] In one embodiment of the present disclosure, the distance between the zero-level copper bar extension portion and the DC positive copper bar extension portion is greater than the distance between the zero-level copper bar main portion and the DC positive copper bar main portion.

[0013] In one embodiment of the present disclosure, the electrical connector assembly includes a female socket, which surrounds at least a portion of the power terminal and is fixed to an end portion of the heat sink.

[0014] In one embodiment of the present disclosure, the electrical connector assembly includes a female socket and an isolation plate, the female socket surrounds at least a portion of the power terminal, the isolation plate is located in the middle of the female socket and is parallel to the first surface, the isolation plate separates the female socket into a first cavity and a second cavity, at least a portion of the zero-level copper busbar penetrates the first cavity, and at least a portion of the DC positive copper busbar and at least a portion of the DC negative copper busbar penetrate the second cavity.

[0015] In one embodiment of the present disclosure, the zero-level copper busbar and at least a portion of the DC positive copper busbar are symmetrically arranged relative to the isolation plate.

[0016] In one embodiment of the present disclosure, the three-level power circuit includes: a DC positive electrode, a DC negative electrode, and a zero-level electrode connected to a DC power supply; an AC electrode for outputting AC; and a first semiconductor switching element, a second semiconductor switching element, a third semiconductor switching element, and a fourth semiconductor switching element connected in series between the DC positive electrode and the DC negative electrode. The connection point between the first semiconductor switching element and the second semiconductor switching element is connected to the zero-level electrode via a first clamping diode, and the connection point between the third semiconductor switching element and the fourth semiconductor switching element is connected to the zero-level electrode via a second clamping diode. The connection point between the second semiconductor switching element and the third semiconductor switching element is connected to the AC electrode.

[0017] The above technical features can be combined in various suitable ways or replaced by equivalent technical features, as long as the purpose of the present invention can be achieved.

[0018] One or more technical solutions provided in the embodiments of the present disclosure integrate a heat sink, a liner assembly, a power terminal, and an electrical connector assembly to form a power semiconductor device, eliminating the need for external functional components and achieving high integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Further details, features and advantages of the present disclosure are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0020] FIG1 shows a schematic structural diagram of a power semiconductor device according to an exemplary embodiment of the present disclosure;

[0021] FIG2 shows a side view of a power semiconductor device according to an exemplary embodiment of the present disclosure;

[0022] FIG3 shows a front schematic diagram of a power semiconductor device according to an exemplary embodiment of the present disclosure;

[0023] FIG4 shows a circuit schematic diagram of a three-level power circuit of a power semiconductor device according to an exemplary embodiment of the present disclosure;

[0024] FIG5 shows a layout diagram of a liner assembly of a power semiconductor device according to an exemplary embodiment of the present disclosure;

[0025] FIG6 is a cross-sectional view showing an electrical connector assembly of a power semiconductor device and an external electrical connector when assembled according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0026] The following describes embodiments of the present disclosure in more detail with reference to the accompanying drawings. Although certain embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are for illustrative purposes only and are not intended to limit the scope of protection of the present disclosure.

[0027] It should be understood that the various steps described in the method embodiments of the present disclosure may be performed in different orders and / or in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present disclosure is not limited in this respect.

[0028] The term "including" and its variations used in this document are open inclusions, that is, "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the description below. It should be noted that the concepts of "first", "second", etc. mentioned in this disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0029] It should be noted that the modifications of "one" and "multiple" mentioned in the present disclosure are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, they should be understood as "one or more".

[0030] The names of the messages or information exchanged between multiple devices in the embodiments of the present disclosure are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0031] The following describes solutions of the embodiments of the present disclosure with reference to the accompanying drawings.

[0032] An embodiment of the present disclosure provides a power semiconductor device. Referring to FIG1 , FIG1 shows a schematic structural diagram of a power semiconductor device according to an exemplary embodiment of the present disclosure. The power semiconductor device includes: a heat sink 1, a backing plate assembly 2, a power terminal 3, and an electrical connector assembly 4. The backing plate assembly 2 is arranged on a first surface (e.g., the upper surface) of the heat sink 1, and the backing plate assembly 2 forms a three-level power circuit according to a certain layout rule. The power terminal 3 is located above the backing plate assembly 2 and is electrically connected to the backing plate assembly 2. The electrical connector assembly 4 is located at the end of the heat sink 1, and a portion of the power terminal 3 extends into the electrical connector assembly 4.

[0033] The embodiment of the present disclosure integrates the heat sink 1, the liner assembly 2, the power terminal 3 and the electrical connector assembly 4 to form a power semiconductor device. There is no need to build a three-level power circuit with multiple power devices and external functional components such as a heat sink, so the integration is high.

[0034] In some embodiments of the present disclosure, a three-level power circuit specifically includes: a DC positive electrode DC+, a DC negative electrode DC-, and a zero-level electrode M connected to a DC power supply; an AC electrode A for outputting AC; and 2N semiconductor switching elements connected in series between the DC positive electrode DC+ and the DC negative electrode DC-, where N is a natural number greater than 1. The connection point between the Nth semiconductor switching element and the (N+1)th semiconductor switching element is connected to the AC electrode A. For the remaining semiconductor switching elements, excluding the Nth semiconductor switching element and the (N+1)th semiconductor switching element, the connection point between every two adjacent semiconductor switching elements is connected to the zero-level electrode via a clamping diode.

[0035] In some embodiments of the present disclosure, referring to Figure 4, the number of semiconductor switching elements is four, namely, including a first semiconductor switching element T1, a second semiconductor switching element T2, a third semiconductor switching element T3 and a fourth semiconductor switching element T4. The first semiconductor switching element T1, the second semiconductor switching element T2, the third semiconductor switching element T3 and the fourth semiconductor switching element T4 are connected in series between the DC positive electrode DC+ and the DC negative electrode DC-; the connection point between the first semiconductor switching element T1 and the second semiconductor switching element T2 is connected to the zero-level electrode M through the first clamping diode D5, and the connection point between the third semiconductor switching element T3 and the fourth semiconductor switching element T4 is connected to the zero-level electrode M through the second clamping diode D6; the connection point between the second semiconductor switching element T2 and the third semiconductor switching element T3 is connected to the AC electrode A.

[0036] Furthermore, the first clamping diode D5 and the second clamping diode D6 may also be replaced by semiconductor switching elements. The semiconductor switching elements may be IGBTs (Insulated Gate Bipolar Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), or other power semiconductor elements with switching characteristics. In some embodiments of the present disclosure, the semiconductor switching element is an IGBT.

[0037] In some embodiments of the present disclosure, a diode may be connected between the collector and emitter of the IGBT, with the anode of the diode connected to the emitter of the IGBT and the cathode of the diode connected to the collector of the IGBT. Specifically, with continued reference to FIG4 , T1 represents the outer tube IGBT (Insulated Gate Bipolar Transistor) of the upper bridge arm, D1 represents the outer tube FWD (Free Wheeling Diode) of the upper bridge arm, T2 represents the inner tube IGBT of the upper bridge arm, D2 represents the inner tube FWD (freewheeling diode) of the upper bridge arm, D5 represents the clamping diode of the upper bridge arm, T3 represents the inner tube IGBT of the lower bridge arm, D3 represents the inner tube FWD of the lower bridge arm, T4 represents the outer tube IGBT of the lower bridge arm, D4 represents the outer tube FWD of the lower bridge arm, and D6 represents the clamping diode of the lower bridge arm. The connection point between T2 and T3, i.e. the middle connection point, leads to the AC electrode A. By controlling the above 10 power semiconductor elements through the peripheral circuit, the conversion of electric energy between the DC positive electrode, the DC negative electrode and the zero-level electrode can be realized.

[0038] In some embodiments of the present disclosure, referring to Figure 5 , power semiconductor circuits are arranged on the liner assembly 2 according to a specific pattern to form a single-phase Type I three-level topology. Specifically, the power semiconductor circuits are arranged in a clockwise order (T1 → D1 → D5 → D2 → T2 → T3 → D3 → D6 → D4 → T4). Electrical connections are established between every two power semiconductor components using wire interconnects, thereby achieving the functionality of a three-level power circuit. By integrating a complete three-level bridge arm for one phase within a single package, this system offers the advantages of high integration and superior electrical performance compared to three-level power circuits constructed using discrete components.

[0039] In some embodiments of the present disclosure, referring to Figures 2 and 3, Figure 2 shows a side schematic diagram of a power semiconductor device according to an exemplary embodiment of the present disclosure; Figure 3 shows a front schematic diagram of a power semiconductor device according to an exemplary embodiment of the present disclosure. The power terminal 3 includes multiple level copper bars, including a zero-level copper bar 31, a DC positive copper bar 32, and a DC negative copper bar 33. The zero-level copper bar 31, the DC positive copper bar 32, and the DC negative copper bar 33 are three types of copper bars with different potentials. The DC positive copper bar 32 and the DC negative copper bar 33 are arranged opposite to each other at intervals on the same horizontal plane. The zero-level copper bar 31 is relatively parallel to and stacked with the DC positive copper bar 32 and the DC negative copper bar 33.

[0040] By arranging the DC positive copper busbar 32 and the DC negative copper busbar 33 on the same horizontal plane, spaced apart from each other and stacked with the parallel zero-level copper busbar 31, a "three-pole, two-layer" layout is achieved. The zero-level copper busbar 31, the DC positive copper busbar 32, and the DC negative copper busbar 33 form a three-pole, two-layer stacked structure, forming a quickly pluggable electrical connector terminal, offering high maintenance efficiency and excellent low-inductance performance.

[0041] During operation, each power semiconductor component frequently switches between four states: on, conducting, off, and blocking. During these transient states, stray parameters (such as parasitic inductance) in the electrical circuit from the DC positive electrode to the DC negative electrode can adversely affect the power semiconductor component (e.g., applying overvoltage to the power semiconductor component and increasing power semiconductor component losses). The disclosed embodiments utilize a three-level power circuit combined with the power terminal structure to achieve a three-level commutation circuit with excellent low-inductance performance.

[0042] In some embodiments of the present disclosure, a portion of the structure of the power terminal 3 extends into the electrical connector assembly 4, so that the electrical connector assembly 4 includes a portion of the structure of the power terminal 3. Exemplarily, the level copper busbar includes a lower copper busbar pin, a copper busbar body, and a copper busbar extension. The lower copper busbar pin is electrically connected to the conductive layer of the liner assembly 2, the copper busbar body is located above the liner assembly 2, and the copper busbar extension extends into the electrical connector assembly 4.

[0043] Furthermore, the level copper busbar may further include a copper busbar penetration portion, and the copper busbar main body is connected to the copper busbar extension portion through the copper busbar penetration portion.

[0044] Specifically, with continued reference to Figures 2 and 3, the plurality of level copper bars include a zero-level copper bar 31, a DC positive copper bar 32, and a DC negative copper bar 33. Correspondingly, the zero-level copper bar 31 includes a zero-level copper bar lower pin 310, a zero-level copper bar body 311, a zero-level copper bar through-portion 312, and a zero-level copper bar extension 313; the DC positive copper bar 32 includes a DC positive copper bar lower pin 320, a DC positive copper bar body 321, a DC positive copper bar through-portion 322, and a DC positive copper bar extension 323; and the DC negative copper bar 33 includes a DC negative copper bar lower pin (not labeled in the figure, symmetrical and similar to the DC positive copper bar lower pin 320), a DC negative copper bar body, a DC negative copper bar through-portion, and a DC negative copper bar extension.

[0045] The lower pin 310 of the zero-level copper busbar is electrically connected to the conductive layer of the liner assembly 2. The main body 311 of the zero-level copper busbar is located above the extension liner assembly 2 and is connected to the lower pin 310 of the zero-level copper busbar. The zero-level copper busbar through-hole 312 is connected to the main body 311 of the zero-level copper busbar. The zero-level copper busbar extension 313 is provided at the end of the heat sink 1 and extends into the electrical connector assembly 4. In one feasible embodiment, the zero-level copper busbar through-hole 312 can also be omitted.

[0046] Similar in structure to the zero-level copper busbar 31, the DC positive copper busbar 32 includes a DC positive copper busbar lower pin 320, a DC positive copper busbar main body 321, a DC positive copper busbar through-hole 322, and a DC positive copper busbar extension 323. The DC positive copper busbar lower pin 320 is electrically connected to the conductive layer of the liner assembly 2. The DC positive copper busbar main body 321 is located above the liner assembly 2 and connected to the DC positive copper busbar lower pin 320. The DC positive copper busbar through-hole 322 is connected to the DC positive copper busbar main body 321. The DC positive copper busbar extension 323 is disposed at the end of the heat sink 1 and extends into the electrical connector assembly 4. The DC positive copper busbar through-hole 322 may not be provided for the DC positive copper busbar 32.

[0047] Similar in structure to the DC positive copper busbar 32, the DC negative copper busbar 33 includes a DC negative copper busbar lower pin, a DC negative copper busbar main body, a DC negative copper busbar through-hole, and a DC negative copper busbar extension. The DC negative copper busbar lower pin is electrically connected to the conductive layer of the liner assembly 2. The DC negative copper busbar main body is located above the liner assembly 2 and connected to the DC negative copper busbar lower pin. The DC negative copper busbar through-hole is connected to the DC negative copper busbar main body. The DC negative copper busbar extension is located at the end of the heat sink 1 and extends into the electrical connector assembly 4. The DC negative copper busbar through-hole is not required for the DC negative copper busbar 33.

[0048] In one feasible embodiment, the electrical connection between the lower pins 310 of the zero-level copper busbar, the lower pins 320 of the DC positive copper busbar, and the lower pins of the DC negative copper busbar and the conductive layer of the liner assembly 2 can be achieved by welding, such as welding each lower pin to the conductive layer of the liner assembly 2 through a material. This is not specifically limited in the present embodiment.

[0049] It should be noted that FIG2 only shows the vertical relationship between the zero-level copper bar 31 and the DC positive copper bar 32 . The vertical relationship between the zero-level copper bar 31 and the DC negative copper bar 33 is similar and will not be described in detail here.

[0050] In some embodiments of the present disclosure, the zero-level copper busbar main body 311 , the DC positive copper busbar main body 321 , and the DC negative copper busbar main body are all parallel to the first surface of the heat sink 1 .

[0051] In some embodiments of the present disclosure, the zero-level copper busbar extension portion 313 , the DC positive copper busbar extension portion 323 , and the DC negative copper busbar extension portion are all parallel to the first surface of the heat sink 1 .

[0052] In some embodiments of the present disclosure, the distance between the zero-level copper bar extension 313 and the DC positive copper bar extension 323 is greater than the distance between the zero-level copper bar main body 311 and the DC positive copper bar main body 321. In one feasible approach, the zero-level copper bar through-hole 312 and the DC positive copper bar through-hole 322 can be symmetrically shaped in an oblique Z-shape, as shown in FIG2 . This design simplifies copper bar manufacturing and provides a stress-buffering effect.

[0053] Similarly, the distance between the zero-level copper bar extension 313 and the DC negative copper bar extension is greater than the distance between the zero-level copper bar main body 311 and the DC negative copper bar main body. In one feasible embodiment, the zero-level copper bar penetration portion 312 and the DC negative copper bar penetration portion 322 can also be configured to have mutually symmetrical oblique Z-shaped shapes. In this case, the DC positive copper bar 32 and the DC negative copper bar 33 are located in the same plane parallel to the first surface of the radiator 1.

[0054] In some embodiments of the present disclosure, the electrical connector assembly 4 includes a female socket 40, which surrounds at least a portion of the power terminal 3, and the female socket 40 is fixed to the end of the heat sink 1. Specifically, the female socket 40 surrounds the zero-level copper busbar extension 313, the DC positive copper busbar extension 323, and the DC negative copper busbar extension. Of course, it can also be set so that the female socket 40 surrounds the zero-level copper busbar extension 313, the DC positive copper busbar extension 323, the DC negative copper busbar extension, and the zero-level copper busbar through-portion 312, the DC positive copper busbar through-portion 322, and the DC negative copper busbar through-portion. It can also be set so that the female socket 40 surrounds the entire power terminal 3.

[0055] In one feasible embodiment, the zero-level copper busbar 31 is connected to the female connector 40 in a through-connection manner to form a zero-level copper busbar through-portion 312. That is, the zero-level copper busbar main body 311 extends from the end of the heat sink 1 through the zero-level copper busbar through-portion 312 and through the female connector 40 to form a zero-level copper busbar extension 313. Similarly, the DC positive copper busbar 32 is connected to the female connector 40 in a through-connection manner to form a DC positive copper busbar through-portion 322. That is, the DC positive copper busbar main body 321 extends from the end of the heat sink 1 through the DC positive copper busbar through-portion 322 and through the female connector 40 to form a DC positive copper busbar extension 323. The shape and position relationship between the DC negative copper busbar 33 and the female connector 40 is similar to that of the DC positive copper busbar 32 and will not be repeated here.

[0056] In some embodiments of the present disclosure, with continued reference to FIG3 , the electrical connector assembly 4 includes a female connector 40 and an isolation plate 43. The female connector 40 surrounds at least a portion of the power terminal 3. The isolation plate 43 is located in the middle of the female connector 40 and is parallel to the first surface of the heat sink 1. The isolation plate 43 divides the female connector 40 into a first cavity 41 and a second cavity 42. At least a portion of the zero-level copper busbar 31 passes through the first cavity 41, and at least a portion of the DC positive copper busbar 32 and at least a portion of the DC negative copper busbar 33 pass through the second cavity 42. The female connector 40, isolation plate 43, first cavity 41, second cavity 42, zero-level copper busbar penetration portion 312, zero-level copper busbar extension portion 313, DC positive copper busbar penetration portion 322, DC positive copper busbar extension portion 323, DC negative copper busbar penetration portion, and DC negative copper busbar extension portion together constitute a pluggable charging interface.

[0057] By providing the isolation plate 43, the insulation creepage distance between the zero-level copper busbar extension 313 and the DC positive copper busbar extension 323 can be increased. Of course, in some embodiments of the present disclosure, the isolation plate 43 may not be provided. In this case, the insulation creepage distance can be met by providing a corresponding insulating medium in an external connector that is connected to the electrical connector assembly 4.

[0058] For example, referring to Figure 6, Figure 6 shows a cross-sectional schematic diagram of the electrical connector assembly 4 and the external electrical connector 5 when assembled. The electrical connector 5 includes an insulator 50, a first conductive block 51 and a second conductive block 52 encased in the insulator 50, and an isolation slot 53. The insulator 50 is coupled to the first cavity 41 and the second cavity 42 of the electrical connector assembly 4. When the electrical connector assembly 4 is not provided with an isolation plate 43, the insulator 50 is simply coupled to the entire cavity of the electrical connector assembly 4, providing insulation protection. When an isolation plate 43 is provided, the isolation slot 53 is coupled to the isolation plate 43 to provide a guide for insertion and removal. The first conductive block 51 is provided with a first slot 511. Elastic conductive sheets (not shown) are provided on two opposing surfaces of the first slot 511 parallel to the first surface of the heat sink 1. When the zero-level copper busbar extension 313 is engaged with the first slot 511, the zero-level copper busbar extension 313 is electrically connected to the first conductive block 51 on both sides via the elastic conductive sheet. Similarly, the second conductive block 52 is provided with a second slot 521. Elastic conductive sheets (not shown) are provided on two opposing surfaces of the second slot 521, parallel to the first surface of the heat sink 1. When the DC positive copper bar extension 323 (or DC negative copper bar extension) is inserted into the second slot 521, the DC positive copper bar extension 323 (or DC negative copper bar extension) is electrically connected to the second conductive block 52 on both sides via the elastic conductive sheet. The spacing between the zero-level copper bar extension 313 and the DC positive copper bar extension 323 is greater than the spacing between the zero-level copper bar main body 311 and the DC positive copper bar main body 321 (or DC negative copper bar main body), better accommodating the space requirements for double-sided electrical connection.

[0059] In order to solve the assembly problem of the power terminal 3 and the female socket 40 caused by the penetration parts of each copper busbar, in some embodiments of the present disclosure, the power terminal 3 and the female socket 40 can be formed as one piece. This not only solves the assembly problem, but also prevents moisture and dust in the environment from penetrating into the liner assembly 2 through the gap between the copper busbar penetration part and the female socket 40.

[0060] In order to limit and fix the electrical connector assembly 4 , the female socket 40 and the end of the heat sink 1 can be mechanically fixed.

[0061] In some embodiments of the present disclosure, at least a portion of the zero-level copper busbar 31 and the DC positive copper busbar 32 are symmetrically arranged relative to the isolation plate 43. Specifically, in a direction parallel to the first surface of the heat sink 1, the zero-level copper busbar main body 311 and the DC positive copper busbar main body 321 (or the DC negative copper busbar main body) are preferably symmetrically arranged relative to the isolation plate 43, that is, the symmetrical center plane of the zero-level copper busbar main body 311 and the DC positive copper busbar main body 321 (or the DC negative copper busbar main body) coincides with the center plane of the isolation plate 43. Furthermore, the zero-level copper busbar extension 313 and the DC positive copper busbar extension 323 (or the DC negative copper busbar extension) can also be symmetrically arranged relative to the isolation plate 43. Such a design can reduce the pulling and deformation of the power terminal 3 by the electrical connector assembly 4 during the plugging and unplugging process. In addition, it can also ensure that the two power semiconductor components connected in series in each phase bridge arm have consistent stray parameters.

[0062] Although the present invention is described herein with reference to specific embodiments, it should be understood that these embodiments are merely illustrative of the principles and applications of the invention. It should be understood that many modifications may be made to the illustrative embodiments, and that other arrangements may be devised, without departing from the spirit and scope of the invention as defined by the appended claims. It should be understood that the various dependent claims and features described herein may be combined in ways other than those described in the original claims. It should also be understood that features described in conjunction with individual embodiments may be employed in conjunction with other described embodiments.

Claims

1. A power semiconductor device, wherein: Includes radiator, liner assembly, power terminals and electrical connector assembly; The liner assembly is arranged on the first surface of the radiator, and the liner assembly is arranged to form a three-level power circuit; The power terminal is located above the liner assembly and is electrically connected to the liner assembly; The electrical connector assembly is located at an end of the heat sink, and a portion of the power terminal extends into the electrical connector assembly.

2. The power semiconductor device according to claim 1, wherein: The power terminal includes multiple level copper bars, which include a zero-level copper bar, a DC positive copper bar and a DC negative copper bar. The DC positive copper bar and the DC negative copper bar are arranged opposite to each other in the same horizontal plane, and the zero-level copper bar is relatively parallel and stacked with the DC positive copper bar and the DC negative copper bar.

3. The power semiconductor device according to claim 2, wherein: The level copper busbar includes a copper busbar lower pin, a copper busbar main body and a copper busbar extension. The copper busbar lower pin is electrically connected to the conductive layer of the liner assembly. The copper busbar main body is located above the liner assembly, and the copper busbar extension extends into the electrical connector assembly.

4. The power semiconductor device according to claim 3, wherein: The horizontal copper busbar further includes a copper busbar through-portion, and the copper busbar main body is connected to the copper busbar extension portion through the copper busbar through-portion.

5. The power semiconductor device according to claim 3 or 4, wherein: The zero-level copper busbar includes a zero-level copper busbar lower pin, a zero-level copper busbar main body, a zero-level copper busbar through-hole, and a zero-level copper busbar extension; the DC positive copper busbar includes a DC positive copper busbar lower pin, a DC positive copper busbar main body, a DC positive copper busbar through-hole, and a DC positive copper busbar extension; the DC negative copper busbar includes a DC negative copper busbar lower pin, a DC negative copper busbar main body, a DC negative copper busbar through-hole, and a DC negative copper busbar extension; The main body of the zero-level copper bar, the main body of the DC positive copper bar, and the main body of the DC negative copper bar are all parallel to the first surface of the radiator; and / or the extension portion of the zero-level copper bar, the extension portion of the DC positive copper bar, and the extension portion of the DC negative copper bar are all parallel to the first surface of the radiator.

6. The power semiconductor device according to claim 5, wherein: The distance between the zero-level copper bar extension portion and the DC positive copper bar extension portion is greater than the distance between the zero-level copper bar main portion and the DC positive copper bar main portion.

7. The power semiconductor device according to claim 1, wherein: The electrical connector assembly includes a female base, which surrounds at least a portion of the power terminal and is fixed to an end of the heat sink.

8. The power semiconductor device according to claim 2, wherein: The electrical connector assembly includes a female socket and an isolation plate. The female socket surrounds at least a portion of the power terminal. The isolation plate is located in the middle of the female socket and is parallel to the first surface. The isolation plate separates the female socket into a first cavity and a second cavity. At least a portion of the zero-level copper busbar penetrates the first cavity, and at least a portion of the DC positive copper busbar and at least a portion of the DC negative copper busbar penetrate the second cavity.

9. The power semiconductor device according to claim 8, wherein: The zero-level copper busbar and at least a portion of the DC positive copper busbar are symmetrically arranged relative to the isolation plate.

10. The power semiconductor device according to claim 1, wherein The three-level power circuit includes: Connect the DC positive electrode, DC negative electrode and zero-level electrode of the DC power supply; an AC electrode for outputting an AC current; and A first semiconductor switching element, a second semiconductor switching element, a third semiconductor switching element, and a fourth semiconductor switching element are connected in series between the DC positive electrode and the DC negative electrode, wherein a connection point between the first semiconductor switching element and the second semiconductor switching element is connected to the zero-level electrode via a first clamping diode, a connection point between the third semiconductor switching element and the fourth semiconductor switching element is connected to the zero-level electrode via a second clamping diode, and a connection point between the second semiconductor switching element and the third semiconductor switching element is connected to the AC electrode.

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