Method for processing internal materials of substrate processing device and method for processing substrate

Abstract

A method for processing internal materials of a substrate processing device and a method for processing a substrate, according to one embodiment of the present invention, propose a method for coating the surface of a device in situ at the same temperature as the oxidation process in order to address susceptor damage and particle generation that may occur during the oxidation process using O3 conducted in a space-divided device.

Description

Method for processing internal materials of a substrate processing device and method for processing substrates

[0001] The present invention relates to semiconductor manufacturing, and more specifically, to a method for processing internal materials of a substrate processing device for manufacturing a semiconductor device and a method for processing a substrate.

[0002] In semiconductor manufacturing, silicon dioxide (SiO2) is used for a variety of purposes. For example, it serves as a field oxide layer, which electrically isolates or insulates individual elements; a gate oxide layer in MOS structures; an insulating layer for metal wiring; and a passivation layer, which protects semiconductor elements from the external environment. There are two methods for forming silicon dioxide: dry oxidation and wet oxidation. Dry oxidation uses oxygen as the oxidizing agent, while wet oxidation uses water vapor.

[0003] Currently, most oxidation processes using O2 and H2O are conducted in furnaces, but in the case of O3 oxidation, wafer dispersion issues arise due to the short lifetime of O3 at high temperatures above 500℃, making it difficult to use O3 in furnaces.

[0004] The present invention is intended to solve various problems including the above-mentioned problems, and aims to provide a method for processing internal materials of a substrate processing device and a method for processing a substrate that can stably implement an oxidation process using O3 in a space-divided facility other than a furnace.

[0005] However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0006] According to one embodiment of the present invention for solving the above problem, a method for processing internal materials of a substrate processing device includes a process chamber in which a processing space is formed, a substrate supporter that supports a plurality of substrates and is raised and lowered and rotated, and a gas injection unit provided on the substrate supporter and having a plurality of gas injection units including a first injection unit and a second injection unit for injecting a plurality of process gases by region, characterized in that a first unit cycle including a step of supplying a silicon-containing gas onto the substrate supporter through the first injection unit while rotating the substrate supporter without placing a substrate on the substrate supporter in order to form a seasoning film on at least a portion of the inside of the process chamber or at least a portion of the substrate supporter and a step of supplying an oxygen-containing gas onto the substrate supporter through the second injection unit is performed at least once.

[0007] In the method for processing internal materials of the above substrate processing device, the plurality of gas injection units may further include a third injection unit, wherein the first injection unit, the third injection unit, and the second injection unit are sequentially arranged along the circumferential direction of the gas injection section, and the first unit cycle may further include a step of supplying nitrogen-containing gas onto the substrate support section through the third injection unit.

[0008] In the method for processing internal materials of the above substrate processing device, the silicon-containing gas may include DCS, HCDS or TriDMAS.

[0009] In the method for processing internal materials of the above substrate processing device, the oxygen-containing gas may include O3 or O2.

[0010] In the method for processing internal materials of the above substrate processing device, the nitrogen-containing gas may include NH3.

[0011] In the internal material processing method of the above substrate processing device, the seasoning film may be a silicon oxide film.

[0012] According to another embodiment of the present invention for solving the above problem, a substrate processing method is provided, which comprises a substrate processing apparatus including a process chamber in which a processing space is formed, a substrate supporter that supports a plurality of substrates and is raised and lowered and rotated, and a gas injection unit provided on the substrate supporter and having a plurality of gas injection units including a first injection unit and a second injection unit for injecting a plurality of process gases into each region, the method comprising: performing a first unit cycle at least once, including a step of supplying a silicon-containing gas onto the substrate supporter through the first injection unit and a step of supplying an oxygen-containing gas onto the substrate supporter through the second injection unit, while rotating the substrate supporter without placing the substrate on the substrate supporter, to form a seasoning film on at least a portion of the inside of the process chamber or at least a portion of the substrate supporter; and a step of performing a second unit cycle at least once, including a step of supplying oxygen-containing gas onto the substrate through the second injection unit while placing the substrate on the substrate support and rotating the substrate to oxidize at least a portion of the substrate.

[0013] In the above substrate processing method, the plurality of gas injection units may further include a third injection unit, wherein the first injection unit, the third injection unit, and the second injection unit are sequentially arranged along the circumferential direction of the gas injection portion, and the first unit cycle may further include a step of supplying nitrogen-containing gas onto the substrate support portion through the third injection unit.

[0014] In the above substrate processing method, the substrate mounted on the substrate support member is a substrate on which a thin film containing silicon is formed, and the seasoning film may be a silicon oxide film.

[0015] In the above substrate processing method, the process temperature for performing the first unit cycle and the process temperature for performing the second unit cycle may be the same temperature. The process temperature may be 400 to 700°C.

[0016] In the above substrate processing method, the first unit cycle and the second unit cycle can be performed in-situ.

[0017] In the above substrate treatment method, the first unit cycle may be performed at least once in-situ between the first oxidation treatment step of performing the second unit cycle at least once and the second oxidation treatment step of performing the second unit cycle at least once after the first oxidation treatment step.

[0018] In the above substrate processing method, the silicon-containing gas may include DCS, HCDS or TriDMAS.

[0019] In the above substrate processing method, the oxygen-containing gas may include O3 or O2.

[0020] In the above substrate processing method, the nitrogen-containing gas may include NH3.

[0021] According to the substrate processing method and internal material processing method of a substrate processing device according to an embodiment of the present invention, which are made as described above, an oxidation process using O3 is performed in a space-divided facility other than a furnace, and a substrate processing method and internal material processing method of a substrate processing device that can prevent a substrate support part from being deteriorated by O3 and suppress particle generation can be implemented.

[0022] Of course, the scope of the present invention is not limited by these effects.

[0023] FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to embodiments of the present invention.

[0024] Fig. 2 is a schematic perspective view showing a substrate support part of the substrate processing device of Fig. 1.

[0025] Figure 3 is a schematic bottom view showing a gas injection unit in a substrate processing device according to a comparative example of the present invention.

[0026] FIG. 4 is a drawing showing the process gas injection pattern of a unit cycle in a substrate processing method using a substrate processing device having a gas injection unit as shown in FIG. 3.

[0027] FIG. 5 is a schematic bottom view showing a gas injection unit in a substrate processing device according to one embodiment of the present invention.

[0028] FIG. 6 is a drawing showing a method for processing internal materials of a substrate processing device using a substrate processing device having a gas injection unit as shown in FIG. 5 and a process gas injection pattern of a unit cycle in a substrate processing method.

[0029] FIG. 7 is a schematic bottom view showing a gas injection unit in a substrate processing device according to another embodiment of the present invention.

[0030] FIG. 8 is a drawing showing a method for processing internal materials of a substrate processing device using a substrate processing device having a gas injection unit as shown in FIG. 7 and a process gas injection pattern of a unit cycle in a substrate processing method.

[0031] Figure 9 is a photograph showing damage that occurred in a susceptor when a substrate processing method according to a comparative example of the present invention was applied.

[0032] Fig. 10 is a drawing illustrating the results of measuring the particle generation pattern when a substrate treatment method according to a comparative example of the present invention is applied.

[0033] FIG. 11 is a drawing illustrating the results of measuring particle generation patterns when applying the internal material processing method and substrate processing method of a substrate processing device according to an embodiment of the present invention.

[0034] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0035] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art. In addition, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation.

[0036] FIG. 1 is a cross-sectional view schematically showing a substrate processing device (200) according to one embodiment of the present invention, and FIG. 2 is a schematic perspective view showing a substrate support part of the substrate processing device (200) of FIG. 1.

[0037] Referring to FIGS. 1 and 2, the substrate processing device (200) may include a process chamber (210), a gas injection unit (220), and a substrate support unit (230).

[0038] The process chamber (210) may include a processing space (212) for processing substrates (S) therein. The process chamber (210) may be provided in various shapes, and may include, for example, a chamber body (213) having an open upper portion and a chamber lid (214) coupled to the chamber body (213). Furthermore, a sealing member for vacuum sealing, such as an O-ring, may be coupled between the chamber body (213) and the chamber lid (214). Furthermore, an openable gate (not shown) may be installed on a side wall of the chamber body (213) to allow movement of the substrates (S).

[0039] The process chamber (210) is configured to maintain airtightness, and can be connected to a vacuum pump (not shown) through at least one exhaust line (216) to discharge process gas within the process space (212) and control the vacuum level within the process space (212). For example, a throttle valve (218) is installed in the exhaust line (216), and the vacuum level within the process chamber (210) can be controlled by controlling the opening rate of the throttle valve (218). In some embodiments, two exhaust lines (216) may be connected to different locations within the process chamber (210).

[0040] The substrate support unit (230) may be installed in the process chamber (210) facing the gas injection unit (220) to support the substrate (S). For example, the substrate support unit (230) may include a susceptor plate (110) on which a plurality of substrates (S) are mounted, and a shaft (160) coupled to the susceptor plate (110) and coupled to the process chamber (210) to enable lifting and rotating operations. For example, the substrate support unit (230) may be coupled to the process chamber (210) using a bellows structure (not shown) so that the sealing of the process chamber (210) can be maintained when the shaft (160) is lifted and / or rotated. The substrate support unit (230) may also be called a substrate holder or a susceptor in terms of its function.

[0041] The susceptor plate (110) may be composed of a graphite material coated with SiC. Meanwhile, a plurality of mounting grooves (120) may be formed on the susceptor plate (110). For example, the mounting grooves (120) may be formed in a pocket-shaped shape on the upper surface of the susceptor plate (110) for mounting substrates (S). The mounting grooves (120) may be formed in an appropriate number considering the size and processing speed of the susceptor plate (110), and may be changed to an appropriate number without being limited to the number illustrated in FIG. 2. As an example that does not limit the technical idea of ​​the present invention, six or eight mounting grooves (120) may be formed on the susceptor plate (110).

[0042] The shaft (160) may be coupled to the bottom or center of the susceptor plate (110) and may extend downward. For example, a driving device (not shown) may be coupled to the shaft (160), and the shaft (160) may be rotated or moved up and down by the driving device. As the shaft (160) rotates or moves up and down, the susceptor plate (110) may also rotate or move up and down, so that the substrate support member (230) may be raised and lowered and / or rotated as a whole.

[0043] In some embodiments, a heater unit (250) may be installed under the susceptor plate (110) in the process chamber (210) to heat the substrates (S) mounted on the susceptor plate (110). For example, the heater unit (250) may include at least one heater (255), and the heater (255) may include various heating sources such as a heating wire or a cartridge heater. The heaters (255) may be provided in multiple zones. Furthermore, the heater unit (250) may further include a housing body (251) surrounding a side of the heater (255) in the process chamber (210) under the susceptor plate (110) and a quartz plate (253) supported on the housing body (252).

[0044] Meanwhile, although not separately illustrated in the drawings, as a modified embodiment of the present invention, a substrate supporter capable of rotating and revolving the substrate may be provided. In this case, the substrate supporter may be installed in a process chamber and may include a susceptor plate that can be raised and lowered and rotated, and at least one satellite that is installed on the susceptor plate and on which a substrate can be seated, and which can rotate and float by the pressure of gas supplied through the susceptor plate to rotate the substrate and to orbit the substrate by the rotation of the susceptor plate. The susceptor plate may have a plurality of gas flow lines connected to a seating groove. For example, a predetermined working gas, such as a float gas for float- ing the substrate, a rotation gas for rotating the substrate, and / or a deceleration gas for slowing or stopping the rotation of the substrate, may be supplied to the seating groove through the gas flow lines. The float gas, the rotation gas, and the deceleration gas may be separated from each other through the gas flow lines and supplied to the satellite through the seating groove. At least one satellite may be arranged in a mounting groove. A substrate may be mounted on an upper surface of the satellite. For example, a plurality of satellites may be arranged in each of a plurality of mounting grooves, in which case the number of satellites may be equal to the number of mounting grooves. The number of mounting grooves illustrated in FIG. 2 is exemplary and the technical idea of ​​the present invention is not limited thereto. The satellite may be supplied with a floating gas from the mounting groove and may be suspended from the mounting groove. Furthermore, the satellite may rotate relative to the susceptor plate by the rotating gas supplied in a forward rotational direction from the mounting groove, thereby rotating the substrate relative to the susceptor plate. Since this rotation is relative to the susceptor plate, it may be referred to as rotation. Furthermore, the satellite may be braked by a decelerating gas supplied in a reverse rotational direction from the mounting groove.For example, the forward rotation direction may refer to the direction in which the satellite rotates, and the reverse rotation direction may refer to the direction opposite to the forward rotation direction so as to reduce the rotating satellite. More specifically, the forward rotation direction and the reverse rotation direction may be opposite directions along a tangent to the circumference depending on the position of the satellite. Additionally, a shaft may be coupled to the susceptor plate. The shaft may be rotatable so that the substrate may orbit. For example, a driving device may be coupled to the shaft, and the shaft may be rotated or moved up and down by the driving device. As the shaft rotates or moves up and down, the susceptor plate may also be rotated or moved up and down. A plurality of gas supply lines may be formed inside the shaft through which a floating gas, a rotating gas, and a decelerating gas are transported. For example, the gas supply lines may include a first gas supply line for supplying a floating gas, a second gas supply line for supplying a decelerating gas, and a rotating gas flow line for supplying a rotating gas.

[0045] Below, the configuration of the gas injection unit (220) according to various embodiments of the present invention and the internal material processing method and substrate processing method of the substrate processing device using the gas injection unit (220) are described together with comparative examples.

[0046] Figure 3 is a schematic bottom view showing a gas injection unit in a substrate processing device according to a comparative example of the present invention.

[0047] Referring to FIGS. 1 to 3, the gas injection unit (220; 220a) may be installed at the top of the process chamber (210) facing the substrate support unit (230) to inject a plurality of process gases into the process space (212) by region. For example, the gas injection unit (220) may inject process gases supplied from the outside of the process chamber (210) into the process space (212). More specifically, the gas injection unit (220) may be installed at the top of the process chamber (210), for example, the chamber lid (214), to inject process gases onto a substrate (S) mounted on the substrate support unit (230).

[0048] The gas injection unit (220) may include an injection unit (226) for injecting oxygen-containing gas and a purge gas injection unit (228) for injecting purge gas. For example, the oxygen-containing gas may include a gas containing oxygen, such as O3 gas, and the purge gas may include an inert gas, such as N2 gas.

[0049] When the substrate support member (230) rotates, the substrates (S) can be sequentially supplied with oxygen-containing gas and purge gas.

[0050] Optionally, the gas injection unit (220) may further include a curtain gas injection unit (222) installed at its center. The curtain gas injection unit (222) may be provided with injection holes for injecting curtain gas to prevent mixing of process gases, for example, mixing of oxygen-containing gas and purge gas. For example, the curtain gas may include an inert gas.

[0051] FIG. 4 is a drawing showing the process gas injection pattern of a unit cycle from the perspective of one substrate in a substrate processing method using a substrate processing device having a gas injection unit as shown in FIG. 3.

[0052] Hereinafter, a substrate processing method using a substrate processing device (200) according to a comparative example of the present invention described above will be described with reference to FIGS. 1 to 4.

[0053] First, the substrates (S) can be mounted onto the mounting grooves (120) on the susceptor plate (110). For example, the substrates (S) can be sequentially loaded onto the susceptor plate (110) while rotating the substrate support member (230). The substrate (S) mounted on the substrate support member (230) can be a substrate on which a thin film containing silicon is formed, and for example, can be a substrate on which a thin film based on Si, such as SiN, SiON, or SiCN, is formed.

[0054] Next, while process gases are being sprayed from the gas spray unit (220), the substrate support unit (230) can be rotated. In this case, process gases are continuously sprayed from the gas spray unit (220), but different process gases can be sequentially supplied onto the substrates (S) as the substrate support unit (230) rotates.

[0055] Accordingly, the substrate processing device (200) can be used to perform a spatially divided oxidation treatment to perform oxidation treatment on the substrates (S). For example, the substrate support member (230) can be continuously rotated. In this case, each substrate (S) can be sequentially moved under the injection unit (226; 226a, 226b, 226c, 226d) and the purge gas injection unit (228; 228a, 228b, 228c, 228d) for injecting oxygen-containing gas at each rotation. Specifically, each substrate (S) can be sequentially moved under the injection unit (226a), the purge gas injection unit (228a), the injection unit (226b), the purge gas injection unit (228b), the injection unit (226c), the purge gas injection unit (228c), the injection unit (226d), and the purge gas injection unit (228d) at each rotation.

[0056] That is, the substrate (S) is supplied with oxygen-containing gas under the injection unit (226), and then a unit cycle (S200) in which purge gas is supplied under the purge gas injection unit (228) can be performed at least once. In Fig. 4, a case in which the unit cycle (S200) is performed repeatedly three times is shown as an example.

[0057] The above unit cycle (S200) includes a step (S210) of supplying oxygen-containing gas onto a substrate (S) through an injection unit (226), and a step (S220) of supplying purge gas onto a substrate (S) through a purge gas injection unit (228).

[0058] In the step of supplying an oxygen-containing gas (S210), the Si-based thin film constituting the substrate (S) may be oxidized to form a silicon oxide film (silicon dioxide: SiO2). In the step of supplying a purge gas (S220), the Si-based thin film may not be oxidized, and the remaining oxygen-containing gas or byproducts of the oxidation reaction may be purged by the purge gas.

[0059] The substrate processing device (200) according to the comparative example of the present invention described above is a space-divided facility capable of controlling the temperature and process gap of an O3 feeding gas line. An oxidation process using O3 was developed in this space-divided facility, but there is a problem that the susceptor plate (110) made of graphite coated with SiC is continuously exposed to O3 during the O3 oxidation process, and the O3 flows into the inside of the SiC coating film, causing oxidation of the graphite layer. In addition, since only O3 is used as the oxygen-containing gas and N2 gas is used as the purge gas, there is no method for surface-coating the susceptor plate (110) constituting the substrate support portion (230), and thus it is not easy to suppress wafer sliding and particle generation due to impurities.

[0060] Hereinafter, a method for processing internal materials of a substrate processing device and a method for processing a substrate using a substrate processing device (200) according to an embodiment of the present invention described above will be described with reference to FIGS. 1, 2, and 5. FIG. 5 is a schematic bottom view showing a gas injection unit in a substrate processing device according to an embodiment of the present invention.

[0061] The gas injection unit (220; 220b) may be installed at the top of the process chamber (210) facing the substrate support unit (230) to inject a plurality of process gases into the process space (212) by region. For example, the gas injection unit (220) may inject process gases supplied from the outside of the process chamber (210) into the process space (212). More specifically, the gas injection unit (220) may be installed at the top of the process chamber (210), for example, the chamber lid (214), to inject process gases onto a substrate (S) mounted on the substrate support unit (230).

[0062] The gas injection unit (220) constituting the substrate processing device (200) according to one embodiment of the present invention includes a plurality of injection units. In the drawing, eight injection units are illustrated as an example, but the technical idea of ​​the present invention is not limited by the exemplary number of injection units. For example, the gas injection unit (220) constituting the substrate processing device (200) of the present invention may be configured with six injection units. Meanwhile, the substrate processing device (200) of the present invention is a device for oxidizing a substrate, and each injection unit constituting the gas injection unit (220) has a configuration in which oxygen-containing gas and purge gas can be supplied.

[0063] The gas injection unit (220) may include a first injection unit (221) for injecting a silicon-containing gas, a second injection unit (226) for injecting an oxygen-containing gas, and a purge gas injection unit (228) for injecting a purge gas. As described above, the first injection unit (221), the second injection unit (226), and the purge gas injection unit (228) each have a configuration capable of selectively supplying an oxygen-containing gas and a purge gas. Furthermore, in the present embodiment, a configuration for injecting a silicon-containing gas may be additionally provided in the first injection unit (221).

[0064] The silicon-containing gas may include DCS, HCDS or TriDMAS, the oxygen-containing gas may include a gas containing oxygen, such as O3 gas, and the purge gas may include an inert gas, such as N2 gas.

[0065] When the substrate support part (230) is rotated, the substrate support part (230) or substrates (S) located below the gas injection part (220) can sequentially receive silicon-containing gas, oxygen-containing gas, and purge gas.

[0066] Optionally, the gas injection unit (220) may further include a curtain gas injection unit (222) installed at its center. The curtain gas injection unit (222) may be provided with injection holes for injecting curtain gas to prevent mixing of process gases, for example, mixing of silicon-containing gas, oxygen-containing gas, and purge gas. For example, the curtain gas may include an inert gas.

[0067] Hereinafter, a method for processing internal materials of a substrate processing device and a method for processing a substrate using a substrate processing device (200) according to an embodiment of the present invention described above will be described with reference to FIGS. 1 to 2 and FIGS. 5 to 6.

[0068] FIG. 6 is a drawing showing the internal material processing method of a substrate processing device using a substrate processing device having a gas injection unit as shown in FIG. 5 and the process gas injection aspect of a unit cycle in a substrate processing method from the perspective of one substrate.

[0069] The substrate processing device of the present invention is, for example, a space-division ALD deposition device rather than a time-division ALD deposition device, and supplies gas to the substrate support (230) simultaneously from all gas injection units of the gas injection unit (220) oppositely arranged on the substrate support unit (230). At this time, since the substrate support unit (230) rotates, the substrates (S) placed on the substrate support unit (230) are sequentially exposed to the process gas injected from each gas injection unit and perform ALD deposition. Under this premise, the aspect illustrated in FIG. 6 can be understood as an aspect described from the perspective of one substrate (S), not an aspect described from the perspective of the gas injection unit (220). If described from the perspective of the gas injection unit (220), it can be understood as an aspect in which the Si-containing gas, O3, and purge gas are continuously injected at a constant flow rate rather than in a pulse form.

[0070] The step (S100) of forming a seasoning film disclosed in FIG. 6 corresponds to a method of processing internal materials of a substrate processing device, and the step (S100) of forming a seasoning film and the oxidation treatment step (S200) correspond to a method of processing a substrate.

[0071] First, while the substrate (S) is not placed on the placement groove (120) of the susceptor plate (110) constituting the substrate support (230), the substrate support (230) is rotated and process gases, for example, silicon-containing gas and oxygen-containing gas, are sprayed from the gas spray unit (220).

[0072] In this case, process gases are continuously injected from the gas injection unit (220), but as the substrate support unit (230) rotates, different process gases may be sequentially supplied onto the susceptor plate (110) in which the settling groove (120) is formed. For example, the settling groove (120) area of ​​the susceptor plate (110) may be supplied with a silicon-containing gas first and then with an oxygen-containing gas.

[0073] Accordingly, a seasoning film, for example, a silicon oxide film, can be formed on a susceptor plate (110) having a mounting groove (120) formed therein using a substrate processing device (200). Furthermore, the seasoning film can be formed on at least a portion of the inside of the process chamber (210) and at least a portion of the substrate support member (230).

[0074] The substrate support member (230) can be rotated continuously. In this case, the area of ​​the mounting groove (120) of the susceptor plate (110) can be sequentially moved under the first injection unit (221) supplying silicon-containing gas, the second injection unit (226; 226a, 226b, 226c, 226d) supplying oxygen-containing gas, and the purge gas injection unit (228; 228a, 228b, 228c, 228d) for each rotation. Specifically, each of the seating groove (120) areas of the susceptor plate (110) can be sequentially moved under the first injection unit (221), the purge gas injection unit (228c), the second injection unit (226d), the purge gas injection unit (228d), the second injection unit (226a), the purge gas injection unit (228a), the second injection unit (226b), and the purge gas injection unit (228b) at each rotation.

[0075] That is, each of the seating grooves (120) of the susceptor plate (110) can be supplied with silicon-containing gas from the first injection unit (221), supplied with purge gas from the purge gas injection unit (228), and supplied with oxygen-containing gas from below the second injection unit (226) in a unit cycle (S100) that can be performed at least once. In Fig. 6, a case in which the unit cycle (S100) is performed once is shown as an example.

[0076] In a modified embodiment, the oxygen-containing gas may be supplied only from the second injection unit (226d), but the purge gas may be supplied to the second injection units (226a, 226b) without supplying the oxygen-containing gas.

[0077] The above unit cycle (S100) for forming a seasoning film includes a step (S112) of supplying a silicon-containing gas onto a substrate support portion (230) through a first injection unit (221), a step (S120) of supplying a purge gas onto a substrate support portion (230) through a purge gas injection unit (228), and a step (S114) of supplying an oxygen-containing gas onto a substrate support portion (230) through a second injection unit (226).

[0078] In the step of supplying oxygen-containing gas (S114), a seasoning film, for example, a silicon oxide film, may be formed on at least a portion of the inside of the process chamber (210) and at least a portion of the substrate support member (230). The seasoning film can prevent the graphite layer from being oxidized due to O3 flowing into the SiC coating film even when the susceptor plate (110) made of graphite material coated with SiC is continuously exposed to O3 during the subsequent O3 oxidation process. Furthermore, since the susceptor plate (110) is surface-coated with the seasoning film, wafer sliding and particle generation due to impurities can be suppressed.

[0079] The above-described step is a step (S100) of forming a seasoning film disclosed in FIG. 6, and corresponds to a method for processing internal materials of a substrate processing device.

[0080] Substrates (S) can be sequentially loaded onto the susceptor plate (110) by continuously mounting the substrates (S) onto the mounting grooves (120) on the susceptor plate (110). For example, while rotating the substrate support member (230), the substrates (S) can be sequentially loaded onto the susceptor plate (110). The substrate (S) mounted on the substrate support member (230) can be a substrate on which a thin film containing silicon is formed, and for example, can be a substrate on which a thin film based on Si, such as Si, SiN, SiON, or SiCN, is formed.

[0081] Next, while process gases are being sprayed from the gas spray unit (220), the substrate support unit (230) can be rotated. In this case, process gases are continuously sprayed from the gas spray unit (220), but different process gases can be sequentially supplied onto the substrates (S) as the substrate support unit (230) rotates.

[0082] Accordingly, the substrate processing device (200) can be used to perform a spatially divided oxidation treatment to perform oxidation treatment on the substrates (S). For example, the substrate support member (230) can be continuously rotated. In this case, each substrate (S) can be sequentially moved under the second injection unit (226; 226a, 226b, 226d) and the purge gas injection unit (228; 228a, 228b, 228c, 228d) that supplies oxygen-containing gas at each rotation. Specifically, each substrate (S) can be sequentially moved under the second injection unit (226a), the purge gas injection unit (228a), the second injection unit (226b), the purge gas injection units (228b, 228c), the second injection unit (226d) and the purge gas injection unit (228d) at each rotation.

[0083] That is, the substrate (S) is supplied with oxygen-containing gas from below the second injection unit (226), and then a unit cycle (S200) in which purge gas is supplied from below the purge gas injection unit (228) can be performed at least once. In Fig. 6, a case in which the unit cycle (S200) is performed repeatedly twice is shown as an example.

[0084] The above unit cycle (S200) for performing substrate oxidation treatment includes a step (S210) of supplying oxygen-containing gas onto the substrate (S) through a second injection unit (226) and a step (S220) of supplying purge gas onto the substrate (S) through a purge gas injection unit (228).

[0085] While performing the above unit cycle (S200), the supply of silicon-containing gas through the first injection unit (221) is stopped.

[0086] In the step of supplying an oxygen-containing gas (S210), the Si-based thin film constituting the substrate (S) may be oxidized to form a silicon oxide film (silicon dioxide: SiO2). In the step of supplying a purge gas (S220), the Si-based thin film may not be oxidized, and the remaining oxygen-containing gas or byproducts of the oxidation reaction may be purged by the purge gas.

[0087] Meanwhile, in a modified additional embodiment, the oxygen-containing gas may also be supplied from the first injection unit (221) and the purge gas injection unit (228d). As described above, the first injection unit (221), the second injection unit (226), and the purge gas injection unit (228) each have a configuration capable of selectively supplying the oxygen-containing gas and the purge gas. In this case, the oxygen-containing gas may be continuously supplied onto the substrates (S) while the substrate support member (230) rotates in the unit cycle (S200) for performing substrate oxidation treatment.

[0088] Considering all of the steps described above, the step of forming a seasoning film (S100) and the oxidation treatment step (S200) disclosed in FIG. 6 correspond to the substrate treatment method of the present invention.

[0089] The method for processing internal materials and the substrate processing method of a substrate processing device according to one embodiment of the present invention are methods for coating the surface of the equipment in-situ at the same temperature as the oxidation process in order to resolve susceptor damage and particle generation that may occur during an oxidation process using O3 in a space-dividing equipment. That is, the unit cycle (S100) and the unit cycle (S200) can be performed in-situ at the same temperature (e.g., 680°C).

[0090] The above process temperature may be, for example, 400 to 700°C. In the substrate treatment method, the first unit cycle (S100) and the second unit cycle (S200) may be performed in-situ. Furthermore, the first unit cycle (S100) may be performed periodically after the second unit cycle (S200) is performed multiple times. For example, the first unit cycle (S100) may be performed in-situ at least once between the first oxidation treatment step in which the second unit cycle (S200) is performed at least once and the second oxidation treatment step in which the second unit cycle (S200) is performed at least once after the first oxidation treatment step.

[0091] Meanwhile, below, a method for processing internal materials and a method for processing a substrate using a substrate processing device (200) according to another embodiment of the present invention will be described with reference to FIGS. 1, 2, and 7. FIG. 7 is a schematic bottom view showing a gas injection unit in a substrate processing device according to another embodiment of the present invention.

[0092] The gas injection unit (220; 220c) may be installed at the top of the process chamber (210) facing the substrate support unit (230) to inject a plurality of process gases into the process space (212) by region. For example, the gas injection unit (220) may inject process gases supplied from the outside of the process chamber (210) into the process space (212). More specifically, the gas injection unit (220) may be installed at the top of the process chamber (210), for example, the chamber lid (214), to inject process gases onto the substrate (S) mounted on the substrate support unit (230).

[0093] The gas injection unit (220) constituting the substrate processing device (200) according to another embodiment of the present invention includes a plurality of injection units. In the drawing, eight injection units are illustrated as an example, but the technical idea of ​​the present invention is not limited by the exemplary number of injection units. For example, the gas injection unit (220) constituting the substrate processing device (200) of the present invention may be configured with six injection units. Meanwhile, the substrate processing device (200) of the present invention is a device for oxidizing a substrate, and each injection unit constituting the gas injection unit (220) has a configuration in which oxygen-containing gas and purge gas can be supplied.

[0094] The gas injection unit (220) may include a first injection unit (221) for injecting a silicon-containing gas, a second injection unit (226) for injecting an oxygen-containing gas, a third injection unit (223) for injecting a nitrogen-containing gas, and a purge gas injection unit (228) for injecting a purge gas. As described above, the first injection unit (221), the second injection unit (226), the third injection unit (223), and the purge gas injection unit (228) each have a configuration capable of selectively supplying an oxygen-containing gas and a purge gas. Furthermore, in the present embodiment, a configuration for injecting a silicon-containing gas in the first injection unit (221) may be additionally provided, and a configuration for injecting a nitrogen-containing gas in the third injection unit (223) may be additionally provided.

[0095] The first injection unit (221), the third injection unit (223), and the second injection unit (226) can be sequentially arranged along the circumferential direction of the gas injection unit (220).

[0096] The silicon-containing gas may include DCS, HCDS or TriDMAS, the nitrogen-containing gas may include NH3, the oxygen-containing gas may include a gas containing oxygen, such as O3 gas, and the purge gas may include an inert gas, such as N2 gas.

[0097] When the substrate support member (230) is rotated, the substrate support member (230) or substrates (S) located below the gas injection member (220) can sequentially receive silicon-containing gas, nitrogen-containing gas, oxygen-containing gas, and purge gas.

[0098] Optionally, the gas injection unit (220) may further include a curtain gas injection unit (222) installed at its center. The curtain gas injection unit (222) may be provided with injection holes for injecting curtain gas to prevent mixing of process gases, for example, mixing of silicon-containing gas, nitrogen-containing gas, oxygen-containing gas, and purge gas. For example, the curtain gas may include an inert gas.

[0099] Hereinafter, a method for processing internal materials and a method for processing substrates using a substrate processing device (200) according to another embodiment of the present invention described above will be described with reference to FIGS. 1 to 2 and FIGS. 7 to 8. FIG. 8 is a drawing showing the process gas injection aspect of a unit cycle in a method for processing internal materials and a method for processing substrates using a substrate processing device having a gas injection unit illustrated in FIG. 7 from the perspective of one substrate.

[0100] The substrate processing device of the present invention is, for example, a space-division ALD deposition device rather than a time-division ALD deposition device, and supplies gas to the substrate support (230) simultaneously from all gas injection units of the gas injection unit (220) oppositely arranged on the substrate support unit (230). At this time, since the substrate support unit (230) rotates, the substrates (S) placed on the substrate support unit (230) are sequentially exposed to the process gas injected from each gas injection unit and perform ALD deposition. Under this premise, the aspect illustrated in FIG. 8 can be understood as an aspect described from the perspective of one substrate (S), not an aspect described from the perspective of the gas injection unit (220). If described from the perspective of the gas injection unit (220), it can be understood as an aspect in which the Si-containing gas, NH3, O3, and purge gas are continuously injected at a constant flow rate rather than in a pulse form.

[0101] The step (S100) of forming a seasoning film disclosed in Fig. 8 corresponds to a method of processing internal materials of a substrate processing device, and the step (S100) of forming a seasoning film and the oxidation treatment step (S200) correspond to a method of processing a substrate.

[0102] First, while the substrate (S) is not placed on the placement groove (120) of the susceptor plate (110) constituting the substrate support member (230), the substrate support member (230) is rotated and process gases, for example, silicon-containing gas, nitrogen-containing gas, and oxygen-containing gas, are sprayed from the gas spray member (220).

[0103] In this case, process gases are continuously injected from the gas injection unit (220), but as the substrate support unit (230) rotates, different process gases may be sequentially supplied onto the susceptor plate (110) in which the settling groove (120) is formed. For example, the settling groove (120) region of the susceptor plate (110) may be supplied with silicon-containing gas first, then with nitrogen-containing gas, and then with oxygen-containing gas.

[0104] In this case, a silicon nitride film is first formed by the reaction of a silicon-containing gas and a nitrogen-containing gas, and then the silicon nitride film reacts with an oxygen-containing gas to form a silicon oxide film.

[0105] Therefore, a seasoning film, for example, a silicon oxide film, can be formed on a susceptor plate (110) having a mounting groove (120) formed therein using a substrate processing device (200). Furthermore, the seasoning film can be formed on at least a portion of the inside of the process chamber (210) and at least a portion of the substrate support member (230). The seasoning film described above with reference to FIGS. 5 and 6 has a relatively slow film deposition rate, whereas the seasoning film described with reference to FIGS. 7 and 8 has an advantage of a relatively fast film deposition rate.

[0106] The substrate support member (230) can be rotated continuously. In this case, the area of ​​the mounting groove (120) of the susceptor plate (110) can be sequentially moved under the first injection unit (221) supplying silicon-containing gas, the third injection unit (223) supplying nitrogen-containing gas, the second injection unit (226; 226a, 226b) supplying oxygen-containing gas, and the purge gas injection unit (228; 228a, 228b, 228c, 228d) for each rotation. Specifically, each of the seating groove (120) areas of the susceptor plate (110) can be sequentially moved under the first injection unit (221), the purge gas injection unit (228c), the third injection unit (223), the purge gas injection unit (228d), the second injection unit (226a), the purge gas injection unit (228a), the second injection unit (226b), and the purge gas injection unit (228b) at each rotation.

[0107] That is, each of the seating grooves (120) of the susceptor plate (110) may be supplied with silicon-containing gas from the first injection unit (221), nitrogen-containing gas from the third injection unit (223), oxygen-containing gas from the second injection unit (226), and purge gas from the purge gas injection unit (228), and a unit cycle (S100) may be performed at least once. In Fig. 8, a case in which the unit cycle (S100) is performed once is illustrated as an example.

[0108] The above unit cycle (S100) for forming a seasoning film includes a step (S132) of supplying a silicon-containing gas onto a substrate support portion (230) through a first injection unit (221), a step (S134) of supplying a nitrogen-containing gas onto a substrate support portion (230) through a third injection unit (223), a step (S120) of supplying a purge gas onto a substrate support portion (230) through a purge gas injection unit (228), and a step (S136) of supplying an oxygen-containing gas onto a substrate support portion (230) through a second injection unit (226).

[0109] In the step of supplying oxygen-containing gas (S136), a seasoning film, for example, a silicon oxide film, can be formed on at least a portion of the inside of the process chamber (210) and at least a portion of the substrate support member (230). The silicon nitride film formed in the step of supplying nitrogen-containing gas (S134) is changed into a silicon oxide film in the step of supplying oxygen-containing gas (S136).

[0110] The above seasoning film can prevent the graphite layer from being oxidized due to O3 flowing into the SiC coating film even when the susceptor plate (110) made of graphite material coated with SiC is continuously exposed to O3 during the subsequent O3 oxidation process. Furthermore, since the susceptor plate (110) is surface-coated with the seasoning film, wafer sliding and particle generation due to impurities can be suppressed.

[0111] The above-described step is a step (S100) of forming a seasoning film disclosed in FIG. 8, and corresponds to a method for processing internal materials of a substrate processing device.

[0112] Substrates (S) can be sequentially loaded onto the susceptor plate (110) by continuously mounting the substrates (S) onto the mounting grooves (120) on the susceptor plate (110). For example, while rotating the substrate support member (230), the substrates (S) can be sequentially loaded onto the susceptor plate (110). The substrate (S) mounted on the substrate support member (230) can be a substrate on which a thin film containing silicon is formed, and for example, can be a substrate on which a thin film based on Si, such as Si, SiN, SiON, or SiCN, is formed.

[0113] Next, while process gases are being sprayed from the gas spray unit (220), the substrate support unit (230) can be rotated. In this case, process gases are continuously sprayed from the gas spray unit (220), but different process gases can be sequentially supplied onto the substrates (S) as the substrate support unit (230) rotates.

[0114] Accordingly, the substrate processing device (200) can be used to perform a spatially divided oxidation treatment to perform oxidation treatment on the substrates (S). For example, the substrate support member (230) can be continuously rotated. In this case, each substrate (S) can be sequentially moved under the second injection unit (226; 226a, 226b) and the purge gas injection unit (228; 228a, 228b, 228c, 228d) that supply oxygen-containing gas at each rotation. Specifically, each substrate (S) can be sequentially moved under the second injection unit (226a), the purge gas injection unit (228a), the second injection unit (226b), and the purge gas injection unit (228b, 228c, 228d) at each rotation.

[0115] That is, the substrate (S) is supplied with oxygen-containing gas from below the second injection unit (226), and then a unit cycle (S200) in which purge gas is supplied from below the purge gas injection unit (228) can be performed at least once. In Fig. 8, a case in which the unit cycle (S200) is performed repeatedly twice is shown as an example.

[0116] The above unit cycle (S200) for performing substrate oxidation treatment includes a step (S210) of supplying oxygen-containing gas onto the substrate (S) through a second injection unit (226) and a step (S220) of supplying purge gas onto the substrate (S) through a purge gas injection unit (228).

[0117] While performing the above unit cycle (S200), the supply of silicon-containing gas through the first injection unit (221) is stopped, and the supply of nitrogen-containing gas through the third injection unit (223) is stopped.

[0118] In the step of supplying an oxygen-containing gas (S210), the Si-based thin film constituting the substrate (S) may be oxidized to form a silicon oxide film (silicon dioxide: SiO2). In the step of supplying a purge gas (S220), the Si-based thin film may not be oxidized, and the remaining oxygen-containing gas or byproducts of the oxidation reaction may be purged by the purge gas.

[0119] Meanwhile, in a modified additional embodiment, the oxygen-containing gas may also be supplied from the first injection unit (221), the third injection unit (223), and the purge gas injection unit (228d). As described above, the first injection unit (221), the second injection unit (226), the third injection unit (223), and the purge gas injection unit (228) each have a configuration capable of selectively supplying the oxygen-containing gas and the purge gas. In this case, the oxygen-containing gas may be continuously supplied onto the substrates (S) while the substrate support member (230) is rotated in the unit cycle (S200) for performing the substrate oxidation treatment.

[0120] Considering all of the steps described above, the step of forming a seasoning film (S100) and the oxidation treatment step (S200) disclosed in FIG. 8 correspond to the substrate treatment method of the present invention.

[0121] A method for processing internal materials and a method for processing substrates of a substrate processing device according to another embodiment of the present invention are methods for coating the surface of the equipment in-situ at the same temperature as the oxidation process in order to resolve susceptor damage and particle generation that may occur during an oxidation process using O3 in a space-dividing equipment. That is, the unit cycle (S100) and the unit cycle (S200) can be performed in-situ at the same temperature (e.g., 680°C).

[0122] The above process temperature may be, for example, 400 to 700°C. In the substrate treatment method, the first unit cycle (S100) and the second unit cycle (S200) may be performed in-situ. Furthermore, the first unit cycle (S100) may be performed periodically after the second unit cycle (S200) is performed multiple times. For example, the first unit cycle (S100) may be performed in-situ at least once between the first oxidation treatment step in which the second unit cycle (S200) is performed at least once and the second oxidation treatment step in which the second unit cycle (S200) is performed at least once after the first oxidation treatment step.

[0123] Meanwhile, in another modified embodiment of the present invention, unlike the configuration disclosed in FIG. 8, in the step (S100) of forming a seasoning film, a purge gas may be supplied instead of an oxygen-containing gas from the second injection unit (226). In this case, the seasoning film implemented in the step (S100) of forming a seasoning film may be a silicon nitride film rather than a silicon oxide film. Continuing, in the process of performing the above-described unit cycle (S200), the silicon nitride film implemented as the seasoning film is changed into a silicon oxide film, and additionally, an oxidation treatment may be performed on the substrate.

[0124] Fig. 9 is a photograph showing damage that occurred in a susceptor when a substrate processing method according to a comparative example of the present invention was applied. The photograph on the right side of Fig. 9 is an enlarged photograph of a portion (area A) of the susceptor shown on the left. Fig. 10 is a drawing illustrating the results of measuring the particle generation pattern when a substrate processing method according to a comparative example of the present invention was applied. The substrate processing method according to the comparative example of the present invention corresponds to the substrate processing method described above with reference to Figs. 3 and 4.

[0125] Referring to FIG. 9, when the internal material treatment method of the substrate treatment device according to the comparative example of the present invention is applied, it can be confirmed that the susceptor plate (110) made of graphite material coated with SiC is continuously exposed to O3 during the O3 oxidation process, and the graphite layer is oxidized by flowing into the SiC coating film (area A).

[0126] Referring to FIG. 10, when the substrate processing method according to the comparative example of the present invention is applied, it can be confirmed that there is no method for surface coating the susceptor plate (110), and thus, wafer sliding and particle generation due to impurities are significantly observed.

[0127] Fig. 11 is a diagram illustrating the results of measuring particle generation patterns when applying the internal material treatment method and substrate treatment method of a substrate treatment device according to an embodiment of the present invention. The internal material treatment method of a substrate treatment device according to an embodiment of the present invention corresponds to the internal material treatment method and substrate treatment method of a substrate treatment device described above with reference to Figs. 5 to 8.

[0128] The inventor of the present invention was able to confirm that when the internal material treatment method and substrate treatment method of the substrate treatment device according to the embodiment of the present invention are applied, the graphite layer is not oxidized even when the susceptor plate (110) made of graphite material coated with SiC is continuously exposed to O3 during the O3 oxidation process.

[0129] Referring to FIG. 11, when the internal material processing method and substrate processing method of the substrate processing device according to the embodiment of the present invention are applied, it can be confirmed that the susceptor plate (110) is surface coated, so that wafer sliding and particle generation due to impurities are significantly reduced.

[0130] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A method for processing internal materials of a substrate processing device, comprising: a process chamber in which a processing space is formed; a substrate support member that supports a plurality of substrates and is raised, lowered, and rotated; and a gas injection member that is provided on the upper portion of the substrate support member and has a plurality of gas injection units including a first injection unit and a second injection unit to inject a plurality of process gases by region. A method characterized in that a first unit cycle is performed at least once, including the steps of: supplying a silicon-containing gas onto the substrate support through the first injection unit to form a seasoning film on at least a portion of the inside of the process chamber or at least a portion of the substrate support while rotating the substrate support without placing the substrate on the substrate support; and supplying an oxygen-containing gas onto the substrate support through the second injection unit. Method for processing internal materials of a substrate processing device.

2. In paragraph 1, The above plurality of gas injection units further include a third injection unit, The first injection unit, the third injection unit, and the second injection unit are sequentially arranged along the circumferential direction of the gas injection unit, The first unit cycle further includes a step of supplying nitrogen-containing gas onto the substrate support through the third injection unit. Method for processing internal materials of a substrate processing device.

3. In paragraph 1, The above silicon-containing gas includes DCS, HCDS or TriDMAS. Method for processing internal materials of a substrate processing device.

4. In paragraph 1, The above oxygen-containing gas contains O3 or O2, Method for processing internal materials of a substrate processing device.

5. In paragraph 2, The above nitrogen-containing gas includes NH3. Method for processing internal materials of a substrate processing device.

6. In paragraph 1 or 2, The above seasoning film is characterized by being a silicon oxide film. Method for processing internal materials of a substrate processing device.

7. A substrate processing method using a substrate processing device including a process chamber in which a processing space is formed, a substrate support member that supports a plurality of substrates and is raised, lowered, and rotated, and a gas injection member that is provided on the upper portion of the substrate support member and has a plurality of gas injection units including a first injection unit and a second injection unit to inject a plurality of process gases by region, A step of performing a first unit cycle at least once, including a step of supplying a silicon-containing gas onto the substrate support through the first injection unit and a step of supplying an oxygen-containing gas onto the substrate support through the second injection unit, while rotating the substrate support without placing the substrate on the substrate support, to form a seasoning film on at least a portion of the inside of the process chamber or at least a portion of the substrate support; and A step of performing a second unit cycle at least once, including a step of supplying oxygen-containing gas onto the substrate through at least the second injection unit, while placing the substrate on the substrate support and rotating the substrate, to oxidize at least a portion of the substrate; Substrate processing method.

8. In paragraph 7, The above plurality of gas injection units further include a third injection unit, The first injection unit, the third injection unit, and the second injection unit are sequentially arranged along the circumferential direction of the gas injection unit, The first unit cycle further includes a step of supplying nitrogen-containing gas onto the substrate support through the third injection unit. Substrate processing method.

9. In paragraph 7 or 8, The substrate mounted on the substrate support member is a substrate having a thin film containing silicon formed thereon, and the seasoning film is characterized in that it is a silicon oxide film. Substrate processing method.

10. In paragraph 7 or 8, The process temperature for performing the first unit cycle and the process temperature for performing the second unit cycle are characterized in that they are the same temperature. Substrate processing method.

11. In paragraph 10, The above process temperature is characterized by being 400 to 700℃. Substrate processing method.

12. In paragraph 7 or 8, The first unit cycle and the second unit cycle are characterized in that they are performed in-situ. Substrate processing method.

13. In paragraph 7 or 8, Characterized in that the first unit cycle is performed at least once in-situ between the first oxidation treatment step of performing the second unit cycle at least once and the second oxidation treatment step of performing the second unit cycle at least once after the first oxidation treatment step. Substrate processing method.

14. In paragraph 7, The above silicon-containing gas includes DCS, HCDS or TriDMAS. Substrate processing method.

15. In paragraph 7, The above oxygen-containing gas contains O3 or O2, Substrate processing method.

16. In paragraph 8, The above nitrogen-containing gas includes NH3. Substrate processing method.

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