Susceptor manufacturing method and susceptor manufactured by method

Abstract

The present invention relates to a susceptor manufacturing method and a susceptor manufactured by the method. The susceptor manufacturing method of the present invention comprises the steps of: arranging a fluid stopper at an end portion of a gas flow path that extends to a gas hole of an insulating plate; inserting a bushing into a through hole of the fluid stopper; forming a bonding layer to a height less than or equal to the height of an end portion of the bushing; and bonding a base substrate on the bonding layer, the base substrate being arranged such that at least one side of the bushing is in contact with the inside of a gas flow path of the base substrate, wherein the height of the bonding layer is pressed to be less than or equal to the height of the fluid stopper during the bonding.

Description

Susceptor manufacturing method and susceptor manufactured by the method

[0001] The present invention relates to a susceptor, and more particularly, to a method for manufacturing a susceptor in which a gas hole is protected from an adhesive, and a susceptor manufactured by the method.

[0002] Typically, semiconductor devices or display devices are manufactured through a semiconductor process in which a plurality of thin film layers, including dielectric layers and metal layers, are sequentially laminated on a glass substrate, flexible substrate, or semiconductor wafer substrate, and then patterned. Such semiconductor process equipment is equipped with a susceptor, such as an electrostatic chuck or a ceramic heater, to support the glass substrate, flexible substrate, or semiconductor wafer substrate and process the semiconductor process. An electrostatic chuck is primarily used in the process of dry etching the thin film layers formed on the substrate.

[0003] Such a susceptor comprises a base substrate and an insulating plate bonded thereto, each having a predetermined gas flow path structure, to supply gas for external cooling or purging purposes to the insulating plate. Typically, the gas flow path provided in the base substrate is configured to communicate with gas holes provided in the insulating plate. Various attempts have been made to prevent the adhesive from penetrating into the gas holes during the process of bonding the base substrate and the insulating plate using a liquid adhesive.

[0004] Figure 1 is a drawing for explaining a method of joining a base material (20) and an insulating plate (13) of a conventional susceptor.

[0005] Referring to Fig. 1, in a conventional susceptor manufacturing process, while bonding a base substrate (20) having a gas path (21) and an insulating plate (13) having a gas hole (3) using a liquid bonding agent (12), an insulating bushing (40) is inserted into the end of the gas path (21) to prevent the liquid bonding agent (12) from penetrating into the gas path (21), and an adhesive film (50) is covered thereon to perform the bonding process, and an appropriate process is added later to enable communication with the gas hole (3).

[0006] However, when bonding the base substrate (20) and the insulating plate (13) after applying the adhesive film (50) as described above, thermal curing progresses and the adhesive film (50) is lifted by thermal expansion at this time, so it is not possible to completely prevent the phenomenon of the adhesive (12) penetrating into the gas path (21). Accordingly, in such a structure, contamination around the gas hole may cause poor gas supply and particle generation or arcing. In particular, this problem is serious in high-power susceptors for the HARC (High Aspect Ratio Contact) process.

[0007] Accordingly, the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method for manufacturing a susceptor, which can prevent clogging of a gas hole and minimize occurrence of arcing by reducing contamination around the gas hole, especially when the gas path of the base substrate is not arranged in a straight line, by applying a bushing structure and a fluid stopper sealing member to the joint structure of the base substrate and the insulating plate, and also to provide a susceptor manufactured by the method.

[0008] First, to summarize the features of the present invention, a method for manufacturing a susceptor according to one aspect of the present invention for achieving the above object includes the steps of: arranging a fluid stopper at an end of a gas passage extending to a gas hole of an insulating plate; inserting a bushing into a through hole of the fluid stopper; forming a bonding layer below a height of an end of the bushing; bonding a base substrate on the bonding layer, arranging the bushing so that at least one side thereof is in contact with an inner side of the gas passage of the base substrate, and bonding the base substrate on the bonding layer, wherein the height of the bonding layer can be pressed below a height of the fluid stopper during the bonding.

[0009] In the above inserting step, the bushing may be inserted into the through hole of the fluid stopper and may extend beyond the height of the fluid stopper to have a height higher than the bonding layer.

[0010] In the above bonding step, the base substrate can be bonded onto the bonding layer so that at least one side of the bushing comes into contact with a groove formed at the inner end of the gas path of the base substrate.

[0011] In the above joining step, the joining can be performed so that at least a portion of the outer wall of the bushing contacts the side wall of the straight portion, in a straight portion having the same diameter extending inwardly of the gas path of the base material.'

[0012] The gas path of the above base material may include a portion that is not parallel to the direction of the through hole of the bushing.

[0013] The above fluid stopper may include a ring-shaped sealing member.

[0014] The cross-sectional shape of the above sealing member may include a square, a circle, an oval, or a trapezoid.

[0015] The above fluid stopper may be made of silicone.

[0016] The above bushing may be made of ceramic material.

[0017] And, according to another aspect of the present invention, a susceptor comprises: a base substrate having a gas path for supplying a cooling gas; an insulating plate fixed on the base substrate and having a gas hole; a bushing having a through hole for communicating the gas path and the gas hole between the base substrate and the insulating plate; and a fluid stopper arranged at an end of the gas path of the insulating plate, wherein one side of the bushing is inserted into the through hole of the fluid stopper, and at least one side of the bushing is in contact with the inside of the gas path of the base substrate.

[0018] According to the method for manufacturing a susceptor according to the present invention and the susceptor manufactured by the method, by applying a bushing structure and a ring-shaped sealing member to the joint structure of the base substrate and the insulating plate, it is possible to withstand or prevent an increase in pressure inside a gas path during the curing process, and accordingly, the clogging of gas holes in a high-power susceptor for a HARC (High Aspect Ratio Contact) process, etc., can be prevented, and contamination around the gas holes can be reduced to minimize the occurrence of arcing.

[0019] In particular, even when the gas path extending from the insulating plate and the joint toward the base material is not arranged in a straight line but is bent, the application of the bushing structure and the fluid stopper sealing member is easy to prevent clogging of the gas hole.

[0020] The accompanying drawings, which are included as part of the detailed description to aid understanding of the present invention, provide examples of the present invention and, together with the detailed description, explain the technical idea of ​​the present invention.

[0021] Figure 1 is a drawing for explaining a method of joining a base material and an insulating plate of a conventional susceptor.

[0022] Figure 2 is a schematic cross-sectional view of a susceptor according to one embodiment of the present invention.

[0023] Figure 3 is an enlarged cross-sectional view of portion AA of Figure 2.

[0024] FIGS. 4A to 4C are cross-sectional views of a gas hole portion in each process for explaining a manufacturing process of a susceptor according to one embodiment of the present invention.

[0025] Figures 5a to 5d are examples of various ring structures of the fluid stopper of the present invention.

[0026] Figure 6 is a schematic cross-sectional view of a susceptor according to another embodiment of the present invention.

[0027] Figure 7 is an enlarged cross-sectional view of the BB portion of Figure 6, with the upper and lower positions reversed.

[0028] FIGS. 8A to 8C are cross-sectional views of a gas hole portion in each process for explaining a manufacturing process of a susceptor according to another embodiment of the present invention.

[0029] FIG. 9 is a schematic cross-sectional view of a susceptor (900) according to another embodiment of the present invention.

[0030] Figure 10 is an enlarged cross-sectional view of the CC portion of Figure 9, with the upper and lower positions reversed.

[0031] Hereinafter, the present invention will be described in detail with reference to the attached drawings. In this case, the same components are indicated by the same reference numerals in each drawing, where possible. In addition, detailed descriptions of functions and / or configurations already known will be omitted. The content disclosed below focuses on parts necessary for understanding the operation according to various embodiments, and descriptions of elements that may obscure the gist of the description will be omitted. In addition, some components in the drawings may be exaggerated, omitted, or schematically illustrated. The size of each component does not entirely reflect the actual size, and therefore, the contents described herein are not limited by the relative sizes or spacing of components drawn in each drawing.

[0032] In describing embodiments of the present invention, if a detailed description of a known technology related to the present invention is judged to unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, the terms described below are terms defined in consideration of their functions in the present invention, and this may vary depending on the intention or custom of the user or operator. Therefore, the definitions should be made based on the contents throughout this specification. The terminology used in the detailed description is only for the purpose of describing embodiments of the present invention and should not be limited in any way. Unless clearly used otherwise, the singular form includes the plural form. In this description, expressions such as "comprises" or "having" are intended to indicate certain features, numbers, steps, operations, elements, parts, or combinations thereof, and should not be construed to exclude the presence or possibility of one or more other features, numbers, steps, operations, elements, parts, or combinations thereof other than those described.

[0033] Additionally, although terms such as first, second, etc. may be used to describe various components, the components are not limited by the terms, and the terms are used only for the purpose of distinguishing one component from another.

[0034] First, in the present invention, the susceptor is a semiconductor device for processing substrates for various purposes, such as semiconductor wafers, glass substrates, flexible substrates, etc., and may be equipped with an electrostatic chuck electrode for use as an electrostatic chuck to support the substrate to be processed, and may be equipped with a high-frequency electrode for processing the substrate to be processed by a process such as plasma-enhanced chemical vapor deposition or dry etching.

[0035] Therefore, it should be understood in advance that the susceptor of the present invention, as mentioned below, is a structure in which a base material including a gas path and an insulating plate including an electrode layer are joined, and the electrode layer provided on the insulating plate includes conductors for realizing one or more of the functions of an electrostatic chuck electrode, a high-frequency electrode, and a heating electrode as described above.

[0036] Figure 2 is a schematic cross-sectional view of a susceptor (100) according to one embodiment of the present invention.

[0037] Referring to FIG. 2, a susceptor (100) according to one embodiment of the present invention includes a base substrate (200) and an insulating plate (300) that are bonded by a bonding agent (312). The shape of the upper surface of the susceptor (100) is preferably circular, but may be designed in other shapes such as an oval or a square, depending on the case.

[0038] The base substrate (200) may be formed as a multi-layer structure composed of a plurality of metal layers. These metal layers may be joined through a brazing process, a welding process, a bonding process, or the like. Of course, the present invention is not limited thereto, and the base substrate (200) in the present invention may be formed of a ceramic / metal composite, or may have a multi-layered laminated structure composed of ceramic / metal composite layers. The insulating plate (300) is fixed on the base substrate (200), and may be fixed on the base substrate (200) using a predetermined fixing means or an adhesive / bonding means. The base substrate (200) and the insulating plate (300) may be manufactured separately and joined, and in some cases, the structure of the insulating plate (300) may be formed by directly using a ceramic sheet or the like on the upper surface of the base substrate (200).

[0039] As shown in Fig. 2, the insulating plate (300) includes an electrode layer (320) disposed between ceramic materials using ceramic sheets or powder. In one embodiment, the ceramic material may be made of a material selected from among aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si3N4), silicon oxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2), zirconium oxide (ZrO2), Y2O3, YAG, YAM, YAP, etc. The insulating plate (300) may be formed by performing a thermal spray coating process, a bonding process of ceramic sheets, etc. with the above-described ceramic material on the upper surface of the base substrate (200).

[0040] The electrode layer (320) may be formed of a conductive metal material. For example, the electrode layer (320) may be formed of at least one of silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), and titanium (Ti), and more preferably, may be formed of tungsten (W). The electrode layer (320) may be formed using a thermal spray coating process or a screen printing process. The electrode layer (320) has a thickness of about 1.0 μm to 100 μm. For example, when the electrode layer (320) is formed using a screen printing process, a thickness of 1.0 to 30 μm may be applied, and when the electrode layer (320) is formed using a thermal spray coating process, a thickness of 30 to 100 μm may be applied. However, it is not preferable to form an electrode layer (320) that is too thin, such as less than 1.0 μm, because it is difficult to do so. In addition, in this case, the resistance value increases due to the porosity and other defects in the electrode layer, and as the resistance value increases, the electrostatic adsorption force may decrease, which is not preferable. In addition, if the electrode layer (320) is too thick, such as exceeding 100 μm, an arcing phenomenon may occur, which is not preferable. Therefore, it is preferable to apply the thickness of the electrode layer (320) to have an appropriate value in the range of about 1.0 μm to 100 μm. The electrode layer (320) formed in this way can generate an electrostatic force by receiving a bias when loading a substrate (not shown) placed on top of the dielectric layer (330), for example, to chuck. When unloading a substrate (not shown), it may be an electrostatic chuck electrode capable of dechucking by applying an opposite bias to the electrode layer (320) to cause discharge. In addition, however, it is not limited thereto, and the electrode layer (320) may further include high-frequency electrode patterns for plasma generation.That is, the susceptor (100) of the present invention is a semiconductor device for processing substrates to be processed for various purposes (e.g., glass substrates, flexible substrates, semiconductor wafer substrates, etc.) such as semiconductor wafers, glass substrates, flexible substrates, etc., and may be equipped with an electrostatic chuck electrode on an electrode layer (320) to be used as an electrostatic chuck to support the substrate to be processed, and may additionally be equipped with a high-frequency electrode for processing the substrate to be processed by a process such as plasma-enhanced chemical vapor deposition or dry etching.

[0041] When the susceptor (100) is mounted inside a chamber for a semiconductor process, in order to provide external cooling or purge gas (e.g., inert gas such as N2 or He gas) to the gas hole (30) of the insulating plate (300), the base substrate (200) and the insulating plate (300) may be provided with a gas supply structure that is connected to the gas hole (30) as shown in FIG. 3.

[0042] Fig. 3 is an enlarged cross-sectional view of part AA of Fig. 2, showing the vertical positions in reverse. Here, the vertical positions are shown in reverse to match the process of placing and bonding the base material (200) on the insulating plate (300) as described below.

[0043] Referring to FIG. 3, for example, the base substrate (200) has a gas passage (15) in an appropriate pattern therein for gas supply, and the gas passage (15) is in fluid communication with the gas holes (30) of the insulating plate (300) through a bushing (400) for preventing penetration of the bonding agent (312) in the manufacturing process of the present invention, and a fluid stopper (450) disposed between the bushing (400) and the base substrate (200), so that gas can be ejected from the gas holes (30) to cool the substrate on the insulating plate (300) or purge the chamber of the semiconductor equipment. At this time, the gas is preferably an inert gas such as helium gas (He) or N2 gas, but is not necessarily limited thereto, and various appropriate gases can be used. The gas holes (30) of the insulating plate (300) can be formed in an appropriate number according to the design.

[0044] In Fig. 2, a bias for, for example, chucking and dechucking, or providing high-frequency power, can be applied to the electrode layer (320) from a predetermined electrode rod (281) provided through a hole (280) at the bottom of the susceptor (100). Gas holes (30) can be formed in an appropriate number between predetermined electrode patterns forming the electrode layer (320) according to the design, and can be formed so that fluid communication is achieved from the gas path (15) to the upper surface of the insulating plate (300) through the bushing (400) and the fluid stopper (450).

[0045] FIGS. 4A to 4C are cross-sectional views of a gas hole portion in each process for explaining a manufacturing process of a susceptor (100) according to one embodiment of the present invention.

[0046] Referring to FIG. 4A, in one embodiment of the present invention, in order to manufacture a susceptor (100) having a gas hole (30), first, an insulating plate (300) is prepared in which a groove (290) extending to the gas hole (30) of the insulating plate (300) for gas supply is formed in advance. The groove (290) is formed to correspond to the end of the gas path (15) of the base substrate (200). At this time, it is preferable that the insulating plate (300) is processed in advance with one or more gas holes (30) corresponding to each of the grooves (290) extending to the grooves (290) at the required positions. The processing of such gas holes (30) can be performed using a laser processing method using an MCT (Machining Center), and can be processed into holes having a diameter of 1 mm or less or several mm or less.

[0047] Hereinafter, the manufacturing process of the susceptor (100) may be performed on a predetermined workbench, but this is omitted. In addition, when placing the insulating plate (300) on the workbench, it is preferable to protect the lower side of the insulating plate (300) in the drawing with an adhesive film to prevent contamination of the gas holes (30).

[0048] In the groove (290) of the insulating plate (300), a bushing (400) having a through hole with the upper and lower sides open toward the gas hole (30) is inserted, and a fluid stopper (450) having a ring-shaped through hole is prepared between the bushing (400) and the base substrate (200). It is preferable that the bushing (400) having the through hole be manufactured to extend upward to a height extending toward the base substrate (200) above the end of the groove (290) of the insulating plate (300) and be inserted into the groove (290). When the bushing (400) is inserted into the groove (290) of the insulating plate (300), it may be fixed using a silicone adhesive or the like formed in advance in the groove (290).

[0049] The bushing (400) may be made of a heat-resistant, wear-resistant insulator, metal, or ceramic material, and preferably may be made of the same material as the ceramic material of the insulating plate (300) described above.

[0050] The above fluid stopper (450) is formed of a ring-shaped sealing member, and its cross-sectional shape is exemplified as being a square (see FIGS. 4a and 5a), but is not limited thereto, and the cross-sectional shape of the ring-shaped fluid stopper (450) may be formed in various shapes such as a trapezoid (see FIG. 5b), a circle (see FIG. 5c), or an oval (see FIG. 5d).

[0051] The fluid stopper (450) may preferably be made of silicone material, and thus remains as a silicone cured body by being cured together in the curing process of the adhesive (312) described below.

[0052] In addition, referring to FIG. 4b, a bushing (400) is inserted into a groove (290) of an insulating plate (300), and a fluid stopper (450) is prepared thereon, and then a bonding layer is formed using a liquid bonding agent (312) such as silicone paste, but the bonding layer is formed with a thickness lower than the height of the bushing (400). The bonding agent (312) has an insulating strength of 25 kV / mm or more and a volume resistivity of 10 to prevent arcing. 15 It is desirable that the material be Ωcm or larger.

[0053] Next, a base substrate (200) is placed on a bonding layer made of a bonding agent (312), and a bushing (400) and a fluid stopper (450) are inserted into the gas passage (15) of the base substrate (200), so that the upper portion of the bushing (400) and the fluid stopper (450) are seated in the groove (190)(s) of the lower portion of the gas passage (15) of the base substrate (200), thereby preparing for bonding. At this time, the fluid stopper (450) may be attached to the groove (190) of the base substrate (200) by utilizing its adhesiveness, or may be attached on top of the bushing (400), so that the bushing (400) and the fluid stopper (450) are inserted and seated in the gas passage (15) of the base substrate (200).

[0054] Thereafter, referring to FIG. 4c, the base substrate (200) and the insulating plate (300) can be firmly joined by pressing and thermally curing the base substrate (200) and the insulating plate (300).

[0055] In this way, by using the bushing (400) and the fluid stopper (450), the penetration of the adhesive (312) into the gas hole (30) or the gas path (15) is prevented even during the compression and heat curing process, thereby preventing the phenomenon of the fluid communication between the gas hole (30) and the gas path (15) being blocked, and unlike the structure covering with an adhesive film as in the past (see FIG. 1), the adhesive (312) can be restricted using the fluid stopper (450) in addition to the bushing (400), so that the compression and heat curing can be performed stably.

[0056] In particular, since the silicone material fluid stopper (450) can be formed to have an adhesive surface and has soft and flexible properties, it can prevent the liquid adhesive (312) from seeping into the gap even when pressed.

[0057] In an embodiment, the fluid stopper (450) may be 0.5 mm in height, and the height is reduced to about 0.4 mm when compressed, so that the fluid stopper (450) completely fills the gap of about 0.4 mm between the top of the bushing (400) and the base substrate (200). In this example, the height of the bushing (400) may be 5 mm, the outer diameter and the inner diameter may be 7 mm and 3 mm, respectively, and the outer diameter and the inner diameter of the fluid stopper (450) may be 6.8 mm and 2.8 mm, respectively. Therefore, the assembly dimensions are not significantly affected by the fluid stopper (450).

[0058] In particular, the susceptor manufacturing process using the bushing (400) and the fluid stopper (450) can be more easily applied to a structure in which the gas path (15) of the base substrate (200) does not extend in a straight line but has a bent or curved portion that changes the extension direction, as in the embodiment of the present invention, as shown in the drawing. That is, in the case where the gas path (15) of the base substrate (200) is in fluid communication with the gas hole (30) of the insulating plate (300) through the bushing (400) and the fluid stopper (450), but includes a portion (15-1 in FIG. 3) that is not parallel to the direction of the through hole of the bushing (400), the bushing (400) and the ring-shaped fluid stopper (450) can be easily applied so as to prevent blockage of the fluid communication between the gas hole (30) and the gas path (15).

[0059] In this way, the susceptor (100) of the present invention manufactured according to FIGS. 4a to 4c is formed in such a way that, when the susceptor (100) is mounted inside a chamber for a semiconductor process, an insulating plate (300) is placed on a base substrate (200), as shown in FIG. 2.

[0060] At this time, the susceptor (100) of the present invention may further include a base substrate (200) having a gas path (15), an insulating plate (300) fixed on the base substrate (200) and having a gas hole (30), a bushing (400) having a through hole for communicating the gas path (15) and the gas hole (30) between the base substrate (200) and the insulating plate (300), and a fluid stopper (450) disposed between the bushing (400) and the base substrate (200).

[0061] Here, a bushing (400) and a fluid stopper (450) are inserted between a groove (290) formed at an end of a gas passage (15) extending to the gas hole (30) of an insulating plate (300) and a groove (190) formed at an end of a gas passage (15) of a base substrate (200), and the bushing (400) extends higher than the end of the groove (290) of the insulating plate (300), and the fluid stopper (450) is positioned to contact the bushing (400) and to contact an end (lower end) of the groove (190) formed at an end of the gas passage (15) of the base substrate (200) on the base substrate (200).

[0062] Figure 6 is a schematic cross-sectional view of a susceptor (500) according to another embodiment of the present invention.

[0063] Referring to Fig. 6, a susceptor (500) according to another embodiment of the present invention includes a base substrate (200) and an insulating plate (300) that are bonded by a bonding agent (312). The susceptor (500) preferably has a circular shape on its upper surface, but may be designed in other shapes such as an oval or a square shape, depending on the case.

[0064] The structure of the susceptor (500) according to another embodiment of the present invention is similar to the structure of the susceptor (100) of FIG. 2. That is, the same reference numerals in the susceptors 100 and 500 represent the same members. However, as described in FIG. 7, when the susceptor (500) is mounted inside a chamber for a semiconductor process, the structure of the gas supply structure for supplying an external cooling or purge gas (e.g., an inert gas such as N2 or He gas) to the gas hole (30) of the insulating plate (300) through the base material (200) is different.

[0065] Fig. 7 is an enlarged cross-sectional view of the BB portion of Fig. 6, showing the vertical positions in reverse. Here, as described below, the vertical positions are shown in reverse in accordance with the process of placing and bonding the base material (200) on the insulating plate (300).

[0066] Referring to FIG. 7, for example, the base substrate (200) has a gas path (15) in an appropriate pattern therein for gas supply, and the gas path (15) is in fluid communication with the through hole thereof and the gas holes (30) of the insulating plate (300) through the bushing (400), so that gas can be ejected from the gas holes (30) to cool the substrate on the insulating plate (300) or purge the chamber of the semiconductor equipment. At this time, the gas is preferably an inert gas such as helium gas (He) or N2 gas, but is not necessarily limited thereto, and various appropriate gases can be used. The gas holes (30) of the insulating plate (300) can be formed in an appropriate number according to the design. Here, in order to prevent penetration of the adhesive (312) in the manufacturing process of the present invention, a fluid stopper (850) is placed between the base substrate (200) and the insulating plate (300), and a bushing (400) is inserted into the through hole of the fluid stopper (850).

[0067] In Fig. 6, a bias for, for example, chucking and dechucking, or providing high-frequency power, can be applied to the electrode layer (320) from a predetermined electrode rod (281) provided through a hole (280) at the bottom of the susceptor (500). Gas holes (30) can be formed in an appropriate number between predetermined electrode patterns forming the electrode layer (320) according to the design, and can be formed so that fluid communication is achieved from the gas path (15) to the upper surface of the insulating plate (300) through the bushing (400) and the fluid stopper (850).

[0068] FIGS. 8A to 8C are cross-sectional views of a gas hole portion in each process for explaining a manufacturing process of a susceptor (500) according to another embodiment of the present invention.

[0069] Referring to Fig. 8a, first, in order to manufacture a susceptor (500) having a gas hole (30), an insulating plate (300) is prepared in which a gas path (890) extending to the gas hole (30) of the insulating plate (300) for gas supply is formed in advance. The end of the gas path (890) of the insulating plate (300) is formed to correspond to the end of the gas path (15) of the base substrate (200). At this time, it is preferable that the insulating plate (300) is processed in advance with one or more gas holes (30) corresponding to each of the gas paths (890) extending to one or more required positions. The processing of such gas holes (30) can be performed using a laser processing method using an MCT (Machining Center), and can be processed into holes having a diameter of 1 mm or less or several mm or less.

[0070] Hereinafter, the manufacturing process of the susceptor (500) may be performed on a predetermined workbench, but this is omitted. In addition, when placing the insulating plate (300) on the workbench, it is preferable to protect the lower side of the insulating plate (300) in the drawing with an adhesive film to prevent contamination of the gas holes (30).

[0071] At the end of the gas passage (890) of the insulating plate (300), first, a fluid stopper (850) having a ring structure is placed so that the through hole of the fluid stopper (850) and the gas passage (890) are in fluid communication, and a bushing (400) having a through hole, the upper and lower sides of which are opened toward the gas hole (30), is inserted into the through hole of the fluid stopper (850). The bushing (400) having the through hole can be manufactured so as to extend to a height that is higher than the height of the fluid stopper (850) and extends toward the base substrate (200) when inserted into the through hole of the fluid stopper (850). For example, the height of the bushing (400) is higher than the height of the fluid stopper (850), and preferably, it can be more than twice the height of the fluid stopper (850).

[0072] The bushing (400) may be made of a heat-resistant, wear-resistant insulator, metal, or ceramic material, and preferably may be made of the same material as the ceramic material of the insulating plate (300) described above.

[0073] The above fluid stopper (850) is formed of a ring-shaped sealing member, and its cross-sectional shape is exemplified as being a square (see FIG. 8a), but is not limited thereto. The ring-shaped fluid stopper (850) may have various cross-sectional shapes, as shown in FIGS. 5a to 5d. That is, the fluid stopper (850) has a larger diameter than the fluid stopper (450) of FIGS. 2 to 4, and its cross-sectional shape may be formed in various shapes, such as a square (see FIG. 5a), a trapezoid (see FIG. 5b), a circle (see FIG. 5c), or an oval (see FIG. 5d).

[0074] The fluid stopper (850) may preferably be made of a silicone material, and thus may be cured together with the adhesive (312) curing process described below, thereby remaining as a silicone cured body.

[0075] In addition, referring to FIG. 8b, a fluid stopper (850) is placed at the end of the gas path (890) of the insulating plate (300), and one side of a bushing (400) is inserted into the through hole of the fluid stopper (850), and then a bonding layer is formed using a liquid bonding agent (312) such as silicone paste, but the bonding layer is formed with a thickness lower than the end height of the bushing (400). The bonding agent (312) has an insulating strength of 25 kV / mm or more and a volume resistivity of 10 to be advantageous in preventing arcing. 15 It is desirable that the material be Ωcm or larger.

[0076] Next, the base substrate (200) is placed on the bonding layer made of the bonding agent (312), and the other side of the bushing (400) is prepared to come into close contact with the end of the gas passage (15) of the base substrate (200). That is, in the bonding process of FIG. 8c, at least one side (part) of the bushing (400) is prepared to be bonded to the end of the gas passage (15) of the base substrate (200), i.e., the inside. In addition, as another embodiment, a groove (190) may be formed on the inside of the end of the gas passage (15) of the base substrate (200), and at this time, the bonding may be prepared by placing the other side of the bushing (400) in the groove (190) formed at the lower end of the gas passage (15) of the base substrate (200).

[0077] As another embodiment, with the fluid stopper (850) and the bushing (400) arranged as above, the bushing (400) and the fluid stopper (450) (see FIG. 4b) may be inserted into the groove (190) inside the gas passage (15) of the base substrate (200), as shown in FIG. 4b, so that the upper portion of the bushing (400) and the fluid stopper (450) are seated in the groove (190) of the lower portion of the gas passage (15) of the base substrate (200), thereby preparing for joining. Here, one side of the fluid stopper (450) may be arranged to contact the bushing (400), and the other side of the fluid stopper (450) may be arranged to contact the end (bottom / lower surface) of the groove (190) formed inside the gas passage (15) of the base substrate (200) on the base substrate (200).

[0078] Hereafter, referring to FIG. 8c, the base substrate (200) and the insulating plate (300) can be firmly joined by pressing and thermally curing the base substrate (200) and the insulating plate (300) against each other. Even if the height of the bonding layer of the bonding agent (312) is formed higher than the height of the bushing (400) above the end of the base substrate (200) side of the bushing (400) in FIG. 8b, when the base substrate (200) and the insulating plate (300) are joined, the bonding layer can be pressed to a height lower than the height of the fluid stopper (850) by the pressing.

[0079] In this way, by using the fluid stopper (850) and the bushing (400) (the fluid stopper (450) can be further used), the penetration of the adhesive (312) into the gas hole (30) or the gas path (15) is prevented even during the pressing and heat curing process, thereby preventing the phenomenon of the fluid communication between the gas hole (30) and the gas path (15) being blocked, and unlike the structure covering with an adhesive film as in the prior art (see FIG. 1), the adhesive (312) can be restricted using the fluid stopper (850) in addition to the bushing (400), so that the pressing and heat curing can be performed stably.

[0080] In particular, since the silicone material fluid stopper (850) can be formed to have an adhesive surface and has soft and flexible properties, it can prevent the liquid adhesive (312) from seeping into the gap even when pressed.

[0081] In an embodiment, the fluid stopper (850) may have a height of 0.5 mm, the height of the bushing (400) may be 5 mm, the outer diameter and the inner diameter may be 7 mm and 3 mm, respectively, and the outer diameter and the inner diameter of the fluid stopper (850) may be 11 mm and 7 mm, respectively. Therefore, the assembly dimensions are not significantly affected by the fluid stopper (850).

[0082] In particular, the susceptor manufacturing process using the bushing (400) and the fluid stopper (850) can be more easily applied to a structure in which the gas path (15) of the base substrate (200) does not extend in a straight line but has a bent or curved portion that changes the extension direction, as in the embodiment of the present invention, as shown in the drawing. That is, in the case where the gas path (15) of the base substrate (200) is in fluid communication with the gas hole (30) of the insulating plate (300) through the bushing (400) and the fluid stopper (850), but includes a portion (15-1 in FIG. 7) that is not parallel to the direction of the through hole of the bushing (400), the bushing (400) and the ring-shaped fluid stopper (850) can be easily applied so as to prevent blockage of the fluid communication between the gas hole (30) and the gas path (15).

[0083] In this way, the susceptor (500) of the present invention manufactured according to FIGS. 8a to 8c is formed in such a way that, when the susceptor (500) is mounted inside a chamber for a semiconductor process, an insulating plate (300) is placed on the base substrate (200), as shown in FIG. 6.

[0084] At this time, the susceptor (500) of the present invention includes a base substrate (200) having a gas path (15), an insulating plate (300) fixed on the base substrate (200) and having a gas hole (30), and may include a fluid stopper (850) for communicating the gas path (15) and the gas hole (30) between the base substrate (200) and the insulating plate (300), and a bushing (400) inserted into the through hole of the fluid stopper (850). In some cases, the susceptor (500) may further include a fluid stopper (450) (see FIG. 4b) disposed between the bushing (400) and the base substrate (200).

[0085] Here, a fluid stopper (850) and a bushing (400) are arranged between the end of the gas path (890) extending to the gas hole (30) of the insulating plate (300) and the groove (190) inside the end of the gas path (15) of the base substrate (200), and the bushing (400) is inserted into the through hole of the fluid stopper (850). The bushing (400) extends to a height higher than that of the fluid stopper (850). That is, the insulating plate (300) and the base substrate (200) can be joined such that one side of the bushing (400) is inserted into the through hole of the fluid stopper (850), and at least one side (part) of the bushing (400) is in contact with the inside of the gas path (15) of the base substrate (200). In another embodiment, at least one side (part) of the bushing (400) may be arranged to contact a groove (190) formed on the inside of the gas passage (15). In addition, if a fluid stopper (450) (see FIG. 4b) is further included, the fluid stopper (450) is arranged to contact the bushing (400) and the end (bottom surface / bottom surface) of the groove (190) formed on the inside of the end of the gas passage (15) of the base substrate (200) on the base substrate (200).

[0086] FIG. 9 is a schematic cross-sectional view of a susceptor (900) according to another embodiment of the present invention.

[0087] Referring to Fig. 9, a susceptor (900) according to another embodiment of the present invention includes a base substrate (200) and an insulating plate (300) that are bonded by a bonding agent (312). The susceptor (500) preferably has a circular shape on its upper surface, but may be designed in other shapes such as an oval or a square shape, depending on the case.

[0088] The structure of a susceptor (900) according to another embodiment of the present invention is similar to the structure of the susceptor (500) of FIG. 6. That is, the same reference numerals in the susceptors 500 and 900 represent the same members. However, as described in FIG. 10, when the susceptor (900) is mounted inside a chamber for a semiconductor process, the structure of the gas supply structure for supplying an external cooling or purge gas (e.g., an inert gas such as N2 or He gas) to the gas hole (30) of the insulating plate (300) through the base material (200) is different.

[0089] Here too, gas holes (30) can be formed in an appropriate number between predetermined electrode patterns forming the electrode layer (320) according to the design, and can be formed so that fluid communication is achieved through the bushing (400) and fluid stopper (850) portion from the gas path (15) to the upper surface of the insulating plate (300).

[0090] Fig. 10 is an enlarged cross-sectional view of the CC portion of Fig. 9, showing the vertical positions in reverse. Here, as described below, the vertical positions are shown in reverse in accordance with the process of placing and bonding the base material (200) on the insulating plate (300).

[0091] Referring to FIG. 10, here too, in order to prevent penetration of the adhesive (312) in the manufacturing process of the present invention, a fluid stopper (850) is placed between the base substrate (200) and the insulating plate (300), and a bushing (400) is inserted into the through hole of the fluid stopper (850), but the shape of the end of the gas path (15) of the base substrate (200) is slightly changed.

[0092] That is, in a straight portion (910) extending with the same diameter inwardly toward the end of the gas path (15) of the base substrate (200), the base substrate (200) and the insulating plate (300) can be joined so that at least a portion of the outer wall of the bushing (400) comes into contact with the side wall of the straight portion (910).

[0093] The manufacturing process of such a structure can be easily implemented by those skilled in the art by referring to a manufacturing process similar to FIGS. 8A to 8C by preparing a base substrate (200) having a straight portion (910) formed as in FIG. 10 without a groove (190) of the base substrate (200) as in FIG. 8C. Here, since a straight portion (910) having the same diameter extending inwardly toward the end of the gas passage (15) of the base substrate (200) is used, the upper end of the bushing (400) opposite the fluid stopper (850) in the straight portion (910) section does not come into contact with the body of the base substrate (200) but is placed in the space above the gas passage (15).

[0094] As described above, according to the susceptor (100 / 500) according to the present invention, by applying a bushing (400) and a fluid stopper (450 / 850) to the joint structure of the base substrate (200) and the insulating plate (300), it is possible to withstand or prevent an increase in pressure inside the gas path during the curing process, and accordingly, it is possible to prevent the clogging of gas holes in a high-power susceptor for a HARC (High Aspect Ratio Contact) process, etc., and to reduce contamination around the gas holes, thereby minimizing the occurrence of arcing.

[0095] As described above, the present invention has been described with specific details such as specific components and limited examples and drawings, but these are provided only to help a more general understanding of the present invention, and the present invention is not limited to the above-described examples, and those with ordinary skill in the art to which the present invention pertains may make various modifications and variations without departing from the essential characteristics of the present invention. Therefore, the spirit of the present invention should not be limited to the described examples, and all technical ideas that are equivalent or equivalent to the claims described below as well as the claims should be interpreted as being included in the scope of the rights of the present invention.

Claims

1. A step of placing a fluid stopper at the end of a gas path extending into a gas hole of an insulating plate; A step of inserting a bushing into the through hole of the above fluid stopper; A step of forming a bonding layer below the end height of the above bushing; A step of bonding a base substrate on the bonding layer, arranging the bushing so that at least one side thereof is in contact with the inner side of the gas path of the base substrate, and bonding the base substrate on the bonding layer, A method for manufacturing a susceptor, wherein the height of the bonding layer is pressurized to be lower than the height of the fluid stopper during the bonding.

2. In paragraph 1, A method for manufacturing a susceptor, wherein, in the inserting step, the bushing is inserted into the through hole of the fluid stopper and extends beyond the height of the fluid stopper to have a height higher than the bonding layer.

3. In paragraph 1, A method for manufacturing a susceptor, wherein, in the above bonding step, the base substrate is bonded onto the bonding layer so that at least one side of the bushing is in contact with a groove formed on the inside of the gas path of the base substrate.

4. In paragraph 1, A method for manufacturing a susceptor, wherein, in the above-mentioned joining step, the joining is performed so that at least a portion of the outer wall of the bushing contacts the side wall of the straight portion in a straight portion that extends with the same diameter inside the gas path of the base material.

5. In paragraph 1, A method for manufacturing a susceptor, wherein the gas path of the above base material includes a portion that is not parallel to the direction of the through hole of the above bushing.

6. In paragraph 1, The above fluid stopper is a method for manufacturing a susceptor including a sealing member having a ring structure.

7. In paragraph 6, A method for manufacturing a susceptor, wherein the cross-sectional shape of the sealing member includes a square, a circle, an oval or a trapezoid.

8. In paragraph 1, The above fluid stopper is a method for manufacturing a susceptor made of silicone.

9. In paragraph 1, The above bushing is a method for manufacturing a susceptor made of ceramic material.

10. Base substrate having a gas path for supplying cooling gas; An insulating plate fixed on the above base material and having a gas hole; A bushing having a through hole for communicating the gas path and the gas hole between the base material and the insulating plate; and Including a fluid stopper arranged at the end of the gas path of the above insulating plate, A susceptor in which one side of the bushing is inserted into the through hole of the fluid stopper, and at least one side of the bushing is in contact with the inside of the gas path of the base material.

11. In paragraph 10, The above bushing is a susceptor having a height extending beyond the height of the fluid stopper.

12. In paragraph 10, The above bushing is a susceptor in which the base substrate and the insulating plate are joined so that at least one side of the bushing is in contact with a groove formed on the inside of the gas path of the base substrate.

13. In paragraph 10, A susceptor in which the base substrate and the insulating plate are joined so that at least a portion of the outer wall of the bushing contacts the side wall of the straight portion in a straight portion that extends with the same diameter toward the end of the gas path of the base substrate.

14. In paragraph 10, A susceptor in which the gas path of the above base material includes a portion that is not parallel to the direction of the through hole of the above bushing.

15. In paragraph 10, The above fluid stopper is a susceptor including a ring-shaped sealing member.

16. In paragraph 15, The cross-sectional shape of the above sealing member is a susceptor including a square, circle, oval or trapezoid.

17. In paragraph 10, The above fluid stopper is a susceptor made of silicone.

18. In paragraph 10, The above bushing is a susceptor made of ceramic material.

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