Light-emitting device

Abstract

A light-emitting component according to the present invention comprises a base, a semiconductor light-emitting element, a first lead, and a second lead. The base includes a first surface and a second surface on a side opposite from the first surface. The semiconductor light-emitting element is mounted on the first surface and is electrically connected to the base. The first lead is connected to the second surface. The second lead penetrates the base and is electrically insulated from the base. The light-emitting component is electrically connected to a first electroconductive layer by the first lead and the second lead. The semiconductor light-emitting element is joined to the first surface of the base.

Description

Light-emitting device

[0001] The present disclosure relates to a light emitting device.

[0002] Japanese Patent Application Laid-Open No. 2003-122222 discloses a semiconductor light emitting device including a semiconductor light emitting element, a switching element for driving the semiconductor light emitting element, and a capacitor.

[0003] Japanese Patent Application Laid-Open No. 2022-137839

[0004] In a semiconductor light emitting device, parasitic inductance exists in the wiring path of a circuit including a semiconductor light emitting element, and the parasitic inductance can affect the output characteristics of the semiconductor light emitting device.

[0005] A light emitting device according to one aspect of the present disclosure includes an insulating substrate including a first substrate surface and a second substrate surface opposite to the first substrate surface, a first conductive layer provided on the first substrate surface, one or more intermediate conductive layers embedded in the substrate, a second conductive layer provided on the second substrate surface, a plurality of via conductors provided in the substrate and electrically connecting the first conductive layer, the one or more intermediate conductive layers, and the second conductive layer, a light emitting component mounted on the first substrate surface and electrically connected to the first conductive layer, and a drive circuit mounted on the first substrate surface and electrically connected to the first conductive layer for driving the light emitting component. and a path, wherein the light emitting component includes a base including a first surface and a second surface opposite the first surface, a semiconductor light emitting element mounted on the first surface and electrically connected to the base, a first lead connected to the second surface, and a second lead penetrating the base and electrically insulated from the base, wherein the light emitting component is electrically connected to the first conductive layer by the first lead and the second lead, and a first distance between the first conductive layer and an intermediate conductive layer of the one or more intermediate conductive layers closest to the first conductive layer is shorter than a second distance between the first substrate surface and the base.

[0006] FIG. 1 is a schematic plan view of an exemplary light emitting device according to a first embodiment. FIG. 2 is a schematic plan view of an intermediate conductive layer of the light emitting device of FIG. 1. FIG. 3 is a schematic plan view of a second conductive layer of the light emitting device of FIG. 1. FIG. 4 is a schematic cross-sectional view of the light emitting device taken along line F4-F4 in FIG. 1. FIG. 5 is a schematic plan view of the light emitting component of FIG. 1. FIG. 6 is a schematic cross-sectional view of the light emitting component taken along line F6-F6 in FIG. 5. FIG. 7 is a schematic perspective view of the semiconductor light emitting element of FIG. 4. FIG. 8 is a schematic circuit diagram of an exemplary light emitting system including the light emitting device of FIG. 1. FIG. 9 is a schematic cross-sectional view showing a current path in the light emitting device of FIG. 1. FIG. 10 is a schematic plan view of an exemplary light emitting device according to a second embodiment. FIG. 11 is a schematic plan view of the intermediate conductive layer of the light emitting device of FIG. 10. FIG. 12 is a schematic plan view of the second conductive layer of the light emitting device of FIG. 10. FIG. 13 is a schematic cross-sectional view of the light emitting device taken along line F13-F13 in FIG. 10. FIG. 14 is a schematic plan view of an exemplary light emitting device according to a third embodiment. Fig. 15 is a schematic plan view of an intermediate conductive layer of the light emitting device of Fig. 14. Fig. 16 is a schematic plan view of a second conductive layer of the light emitting device of Fig. 14. Fig. 17 is a schematic plan view of the light emitting component of Fig. 14. Fig. 18 is a schematic cross-sectional view of the light emitting component taken along line F18-F18 in Fig. 17. Fig. 19 is a schematic plan view of a light emitting component of a modified example. Fig. 20 is a schematic cross-sectional view of the light emitting component taken along line F20-F20 in Fig. 19. Fig. 21 is a schematic plan view of a light emitting component of a modified example. Fig. 22 is a schematic cross-sectional view of the light emitting component taken along line F22-F22 in Fig. 21. Fig. 23 is a schematic plan view of a light emitting device of a modified example. Fig. 24 is a schematic plan view of a light emitting device of a modified example. Fig. 25 is a schematic plan view of a light emitting device of a modified example.

[0007] DETAILED DESCRIPTION Hereinafter, several embodiments of the light emitting device of the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, for ease of understanding, hatching lines may be omitted in cross-sectional views. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure. Terms such as "first," "second," and "third" in the present disclosure are used merely to distinguish between objects and not to rank them.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The phrase "at least one" as used in this disclosure means "one or more" of the desired options. As an example, the phrase "at least one" as used in this disclosure means "only one option" or "both of two options" when the number of options is two. As another example, the phrase "at least one" as used in this disclosure means "only one option" or "any combination of two or more options" when the number of options is three or more.

[0010] [First Embodiment] A light-emitting device 10 according to a first embodiment will be described with reference to FIGS. 1 to 9. FIG. 1 shows a schematic planar structure of the light-emitting device 10 according to the first embodiment, including a substrate 20, a first conductive layer 31, a light-emitting component 40, and a drive circuit 70. FIG. 2 shows a schematic planar structure of the intermediate conductive layer 33 (first intermediate conductive layer 34). FIG. 3 shows a schematic planar structure of the second conductive layer 32 (second intermediate conductive layer 35). FIG. 3 shows the second conductive layer 32 seen through the substrate 20 from the first substrate surface 21 side of the substrate 20, which is the component mounting surface. In FIG. 3, the second insulating layer 27B of the substrate 20 is indicated by a dashed line to clearly show the position of the second conductive layer 32 relative to the first conductive layer 31 in FIG. 1 and the first intermediate conductive layer 34 in FIG. 2. FIG. 4 shows a schematic cross-sectional structure taken along line F4-F4 in FIG. 1. Fig. 5 shows a schematic planar structure of the light emitting component 40, and Fig. 6 shows a schematic cross-sectional structure taken along line F6-F6 in Fig. 5. Fig. 7 is a schematic perspective view of the semiconductor light emitting element 50 of Fig. 4. Fig. 8 is a schematic circuit diagram of an exemplary light emitting system 800 including the light emitting device 10 of Fig. 1. Fig. 9 is a schematic cross-sectional view showing a current path in the light emitting device 10 of Fig. 1.

[0011] In this disclosure, components may be described based on mutually orthogonal X, Y, and Z axes shown in the drawings. The term "planar view" used in this disclosure refers to viewing the light-emitting device 10 in the Z-axis direction.

[0012] (Overall Configuration of Light-Emitting Device) The light-emitting device 10 of the first embodiment includes a substrate 20 , a light-emitting component 40 , and a drive circuit 70 .

[0013] The light-emitting components 40 and the drive circuit 70 are provided on a substrate 20. In the light-emitting device 10 of the first embodiment, the drive circuit 70 drives the light-emitting components 40. The substrate 20 has a rectangular shape in a plan view. Note that a plan view is synonymous with viewing the light-emitting device 10 in the thickness direction of the substrate 20 (a direction perpendicular to the paper surface in FIG. 1). The substrate 20 includes a first substrate surface 21, a second substrate surface 22 (see FIG. 4) opposite the first substrate surface 21, and first to fourth side surfaces 23 to 26. The first side surface 23 and the second side surface 24 correspond to both end surfaces of the substrate 20 in the Y-axis direction. In the example of FIG. 1, the first side surface 23 is located on the lower side of the paper surface, and the second side surface 24 is located on the upper side of the paper surface. The third side surface 25 and the fourth side surface 26 correspond to both end surfaces of the substrate 20 in the X-axis direction. In the example of FIG. 1, the third side surface 25 is located on the left side of the paper surface, and the fourth side surface 26 is located on the right side of the paper surface.

[0014] As shown in Figure 4, the substrate 20 may be a multi-layer substrate. In one example, the substrate 20 includes a first insulating layer 27A, a second insulating layer 27B, and a third insulating layer 27C. The first insulating layer 27A and the second insulating layer 27B are disposed with the third insulating layer 27C sandwiched between them. The third insulating layer 27C can be said to be disposed between the first insulating layer 27A and the second insulating layer 27B. The first insulating layer 27A includes a first substrate surface 21. The second insulating layer 27B includes a second substrate surface 22.

[0015] The first insulating layer 27A, the second insulating layer 27B, and the third insulating layer 27C are made of, for example, an insulating material. One example of the insulating material is a material containing epoxy resin, such as glass epoxy resin. Another example of the insulating material is a material containing ceramic. Examples of the material containing ceramic include AlN (aluminum nitride) or Al ２ O ３ (alumina) may be used.

[0016] The first insulating layer 27A includes the first substrate surface 21 of the substrate 20. The front surface of the first insulating layer 27A can be said to constitute the first substrate surface 21 of the substrate 20. The second insulating layer 27B includes the second substrate surface 22 of the substrate 20. The back surface of the second insulating layer 27B can be said to constitute the second substrate surface 22 of the substrate 20. In Figure 4, for the purpose of explanation, the interfaces between the first insulating layer 27A, the second insulating layer 27B, and the third insulating layer 27C are shown with solid lines, but in reality, these interfaces may not be clear.

[0017] The light-emitting device 10 of the first embodiment may include multiple conductive layers. The multiple conductive layers may include a first conductive layer 31, a second conductive layer 32, and at least one intermediate conductive layer 33. The first conductive layer 31 is provided on the first substrate surface 21 of the substrate 20. The second conductive layer 32 is provided on the second substrate surface 22 of the substrate 20. The intermediate conductive layer 33 is embedded within the substrate 20. In one example, the light-emitting device 10 includes two intermediate conductive layers 33. The light-emitting device 10 may include a first intermediate conductive layer 34 embedded between the first insulating layer 27A and the third insulating layer 27C, and a second intermediate conductive layer 35 embedded between the third insulating layer 27C and the second insulating layer 27B. The light-emitting device 10 may include three or more intermediate conductive layers 33. The substrate 20, the first conductive layer 31, the second conductive layer 32, and the intermediate conductive layer 33 form a multilayer substrate. The multi-layer substrate may be, for example, a four-layer substrate. The second intermediate conductive layer 35 may be omitted.

[0018] The first intermediate conductive layer 34 is a conductive layer closer to the first conductive layer 31 than the second conductive layer 32. The second intermediate conductive layer 35 is a conductive layer closer to the second conductive layer 32 than the first conductive layer 31. The first intermediate conductive layer 34 corresponds to the conductive layer closest to the first conductive layer 31 of the two intermediate conductive layers 33.

[0019] The first conductive layer 31, the second conductive layer 32, and the intermediate conductive layer 33 (34, 35) may be composed of one or more materials selected from a group including, for example, Cu (copper), Al (aluminum), Ti (titanium), TiN (titanium nitride), Au (gold), Ag (silver), and W (tungsten). The first conductive layer 31, the second conductive layer 32, and the intermediate conductive layer 33 (34, 35) may be composed of multiple conductive films. For example, the first conductive layer 31, the second conductive layer 32, and the intermediate conductive layer 33 (34, 35) may be composed of a first conductive film made of a material containing Cu and a second conductive film on the first conductive film. The first conductive film may be, for example, copper foil, and the second conductive film may be a plated film.

[0020] The distance L11 between the first conductive layer 31 and the first intermediate conductive layer 34 may be different from the distance L13 between the first intermediate conductive layer 34 and the second intermediate conductive layer 35. The distance L11 between the first conductive layer 31 and the first intermediate conductive layer 34 is smaller than the distance L13 between the first intermediate conductive layer 34 and the second intermediate conductive layer 35. The distance L11 between the first conductive layer 31 and the first intermediate conductive layer 34 may be greater than 0 mm and less than or equal to 0.3 mm. In one example, the distance L11 is 0.1 mm. The distance L13 between the first intermediate conductive layer 34 and the second intermediate conductive layer 35 may be greater than 0 mm and less than or equal to 1.0 mm. In one example, the distance L13 is 0.6 mm. The distance L12 between the second intermediate conductive layer 35 and the second conductive layer 32 may be equal to the distance L11 between the first conductive layer 31 and the first intermediate conductive layer 34. The distance L12 between the second intermediate conductive layer 35 and the second conductive layer 32 may be different from the distance L11 between the first conductive layer 31 and the first intermediate conductive layer 34. The distance L12 between the second intermediate conductive layer 35 and the second conductive layer 32 may be smaller than the distance L13 between the first intermediate conductive layer 34 and the second intermediate conductive layer 35.

[0021] As shown in FIG. 4 , the first substrate surface 21 of the substrate 20 is covered with a first resist layer 37A. The first resist layer 37A covers a portion of the first conductive layer 31 disposed on the first substrate surface 21. The first resist layer 37A includes an opening that partially exposes the first conductive layer 31. The portions of the first conductive layer 31 exposed through the first resist layer 37A may be pads or lands to which the light-emitting components 40 and the drive circuit 70 are electrically connected. The second substrate surface 22 of the substrate 20 is covered with a second resist layer 37B. The second resist layer 37B covers the second conductive layer 32 disposed on the second substrate surface 22. The first resist layer 37A and the second resist layer 37B are formed of an insulating material such as epoxy resin or polyimide resin. The first resist layer 37A and the second resist layer 37B may contain a filler such as silica or alumina. Note that in FIG. 1 , the opening in the first resist layer 37A is indicated by a two-dot chain line.

[0022] 1 to 3 , the substrate 20 includes a through-hole 28 at each of the four corners of the substrate 20. The through-holes 28 penetrate the substrate 20 in the Z-axis direction. Each through-hole 28 is provided for fixing the light-emitting device 10 to a support member or the like. A fixing member such as a screw is inserted into each through-hole 28.

[0023] (Light Emitting Component) As shown in FIGS. 5 and 6 , the light emitting component 40 includes a stem 41 and a semiconductor light emitting element 50 .

[0024] The stem 41 supports the semiconductor light emitting element 50. The stem 41 also electrically connects the semiconductor light emitting element 50 to the substrate 20. The stem 41 includes a base 42, a first lead 43, a second lead 44, and an insulating material 45.

[0025] The base 42 supports the semiconductor light emitting element 50. The base 42 is a plate-shaped member. The base 42 has a substantially circular shape when viewed from the Z-axis direction. The base 42 includes a first surface 42A and a second surface 42B opposite the first surface 42A. The base 42 may be made of a material containing, for example, iron (Fe). The surface of the base 42 may include a plating layer. The plating layer may be made of a material containing, for example, nickel (Ni). The thickness of the base 42 is, for example, approximately 1.2 mm.

[0026] The base 42 includes three through holes 42C that penetrate the base 42 in the Z-axis direction. The through holes 42C are generally circular when viewed from the Z-axis direction, and their diameter is large enough to insert the second lead 44. The diameter of the through holes 42C is approximately 1.0 mm. The through holes 42C are formed to fix the second lead 44 to the base 42. As shown in FIG. 5 , the multiple through holes 42C may be arranged on a circumference of a predetermined radius in a plan view.

[0027] The first lead 43 and the second lead 44 are provided to fix the light emitting component 40 to the substrate 20 and form a power supply path to the semiconductor light emitting element 50. The first lead 43 and the second lead 44 may be made of a material containing, for example, Fe and Ni. The first lead 43 and the second lead 44 may include a plating layer that forms the surface. The plating layer may be made of a material containing, for example, Ni. The first lead 43 and the second lead 44 are rod-shaped members with a diameter of approximately 0.45 mm.

[0028] As shown in FIG. 6 , the first lead 43 is connected to the base 42. The first lead 43 includes a connection portion 43A and a terminal portion 43C. The connection portion 43A is provided at one end of the terminal portion 43C. The terminal portion 43C has the same thickness as the second lead 44. The connection portion 43A has a larger diameter than the terminal portion 43C, that is, the connection portion 43A is thicker than the terminal portion 43C. The end surface of the connection portion 43A is a connection surface 43B.

[0029] The first lead 43 is disposed so that the connection surface 43B of the connection portion 43A faces the second surface 42B of the base 42. In one example, the first lead 43 may be disposed on the circumference of the base 42 on which the plurality of through holes 42C are disposed. The connection surface 43B of the first lead 43 is joined to the second surface 42B of the base 42. The connection surface 43B of the first lead 43 and the second surface 42B of the base 42 may be joined by, for example, silver brazing or resistance welding.

[0030] The plurality of second leads 44 are inserted into the plurality of through holes 42C, respectively. An insulating material 45 is filled between each second lead 44 and each through hole 42C. The second leads 44 are spaced apart from the base 42 by the insulating material 45. The insulating material 45 is made of an electrically insulating material, such as glass. The insulating material 45 supports the second leads 44 while electrically insulating them from the base 42.

[0031] The second lead 44 includes a connecting portion 44A and a terminal portion 44C. The connecting portion 44A is a portion that protrudes from the first surface 42A of the base 42, and the terminal portion 44C is a portion that protrudes from the second surface 42B of the base 42. The connecting portion 44A is a portion that is connected to the semiconductor light emitting element 50 by a wire 46. The wire 46 is connected to the tip surface 44B of the connecting portion 44A. The terminal portion 44C is used when mounting the light emitting device 10 on the substrate 20. The height L21 of the connecting portion 44A may be the length from the first surface 42A of the base 42 to the tip surface 44B of the connecting portion 44A. The height L21 of the connecting portion 44A is, for example, approximately 0.1 mm.

[0032] The semiconductor light emitting element 50 is mounted on the first surface 42A of the base 42. The semiconductor light emitting element 50 includes a light emitting chip 51 and a submount 55. The light emitting chip 51 is, for example, a semiconductor laser chip. The submount 55 is connected to the first surface 42A of the base 42. The light emitting chip 51 is electrically connected to the base 42 by the submount 55.

[0033] The light-emitting chip 51 is electrically connected to the second lead 44 by the wire 46. In one example, a first end of the wire 46 is connected to the light-emitting chip 51, and a second end of the wire 46 is connected to the tip surface 44B of the second lead 44. The wire 46 is made of a material containing Au, for example. In the light-emitting component 40, a current supply path to the light-emitting chip 51 is formed by the first lead 43, the base 42, the submount 55, the light-emitting chip 51, the wire 46, and the second lead 44.

[0034] The light emitting component 40 includes a cover 47. The cover 47 may be called a cap. The cover 47 is fixed to the first surface 42A of the base 42. The cover 47 covers the semiconductor light emitting element 50. The cover 47 is made of a material containing Fe.

[0035] The cover 47 has a body portion 47A, a flange portion 47B, and a top portion 47C. The body portion 47A surrounds the semiconductor light-emitting element 50 when viewed from the Z-axis direction. In one example, the body portion 47A has a cylindrical shape. The flange portion 47B is connected to the lower end of the body portion 47A. The flange portion 47B extends outward from the body portion when viewed from the Z-axis direction. In one example, the flange portion 47B has a ring shape when viewed from the Z-axis direction. The flange portion 47B is fixed to the first surface 42A of the base 42 by welding, a bonding material, or the like. The top portion 47C is connected to the upper end of the body portion 47A. In one example, the top portion 47C has a circular plate shape when viewed from the Z-axis direction. The top portion 47C has a window portion 47D. Laser light emitted from the semiconductor light-emitting element 50 passes through the window portion 47D. The top portion 47C includes, for example, a circular window portion 47D when viewed from the Z-axis direction.

[0036] The light emitting component 40 may include a window member 48. The window member 48 is attached to the underside of the top portion 47C in the figure. The window member 48 covers the window portion 47D. The window member 48 is translucent to light in a wavelength band that includes the laser light emitted from the semiconductor light emitting element 50. In one example, the window member 48 is made of glass. The window member 48 may be omitted.

[0037] (Semiconductor Light-Emitting Device) As shown in FIG. 7 , the semiconductor light-emitting device 50 includes a light-emitting chip 51. The light-emitting chip 51 emits laser light in a predetermined wavelength band. The light-emitting chip 51 is a surface-emitting laser element. In one example, the light-emitting chip 51 is configured as a photonic-crystal surface-emitting laser (PCSEL) element. A PCSEL element is capable of high-power operation (high-brightness operation) by emitting a beam with high beam quality and a narrow divergence angle, and is characterized by having little temperature dependence of the operating wavelength. The light-emitting chip 51 may also be configured as a vertical-cavity surface-emitting laser (VCSEL) element.

[0038] The light-emitting chip 51 includes a first element surface 51A and a second element surface 51B opposite the first element surface 51A. The light-emitting chip 51 includes a first electrode 52A provided on the first element surface 51A and a second electrode 52B provided on the second element surface 51B. The light-emitting chip 51 includes a light-emitting region 53 in the center of the element surface. The first electrode 52A is formed, for example, in a rectangular ring shape including an opening (through-hole) that exposes the light-emitting region 53 on the element surface. The second electrode 52B is formed, for example, over the entire back surface of the element. The first electrode 52A corresponds to a cathode electrode, and the second electrode 52B corresponds to an anode electrode.

[0039] The semiconductor light emitting element 50 includes a submount 55. The light emitting chip 51 is mounted on the submount 55. The light emitting chip 51 is mounted on the base 42 using the submount 55. The submount 55 is larger than the light emitting chip 51 in plan view. For example, the light emitting chip 51 may have a size of approximately 0.9 mm × 0.9 mm, while the submount 55 may have a size of approximately 1.2 mm × 1.2 mm. The submount 55 may be made of an alloy of Cu and W. The submount 55 may also be made of a material other than Cu and W. The submount 55 includes, for example, a surface bonding portion 56. An example of a material for the surface bonding portion 56 is an alloy of Au and tin (Sn), but other metal materials may also be used. Using such a submount 55 facilitates mounting the light emitting chip 51 on the base 42.

[0040] 5 , the first electrode 52A of the light-emitting chip 51 is electrically connected to the plurality of second leads 44 by a plurality of wires 46. A first end of the wire 46 is connected to the first electrode 52A provided on the first element surface 51A of the light-emitting chip 51, and a second end of the wire 46 is connected to the tip surface 44B of the second lead 44. The second electrode 52B of the light-emitting chip 51 is electrically connected to the submount 55.

[0041] 6 , in one example, the height L21 of the tip surface 44B of the second lead 44 is lower than the height L22 of the first electrode 52A of the light-emitting chip 51 of the semiconductor light-emitting element 50. The height L21 of the tip surface 44B of the second lead 44 may be equivalent to the length of the connection portion 44A of the second lead 44 protruding from the first surface 42A of the base 42. The height L21 of the tip surface 44B of the second lead 44 may be the distance in the Z-axis direction from the first surface 42A of the base 42 to the tip surface 44B of the second lead 44. The height L21 of the tip surface 44B of the second lead 44 may be equal to the height L22 of the first electrode 52A of the light-emitting chip 51 of the semiconductor light-emitting element 50. The height L21 of the tip surface 44B of the second lead 44 may be higher than the height L22 of the first electrode 52A of the light-emitting chip 51 of the semiconductor light-emitting element 50.

[0042] 1 and 4, the drive circuit 70 is provided to drive the light emitting component 40. The drive circuit 70 is configured to drive the light emitting chip 51 of the light emitting component 40.

[0043] The driving circuit 70 includes a switching element 71 and one or more capacitors 72. In one example, the driving circuit 70 includes five capacitors 72. The number of capacitors 72 may be changed as appropriate depending on, for example, the light-emitting chips 51 of the light-emitting component 40.

[0044] The switching element 71 and the light emitting component 40 are arranged side by side in a first direction in a plan view. The first direction may be the Y-axis direction, for example. The switching element 71 is provided at a position adjacent to or close to the light emitting component 40 in the Y-axis direction.

[0045] The switching element 71 has a rectangular shape in a plan view. For example, the switching element 71 includes a lateral transistor. For example, the lateral transistor may be a high electron mobility transistor (HEMT) made of a nitride semiconductor such as gallium nitride (GaN). The lateral transistor may be a metal-oxide-semiconductor field-effect transistor (MOSFET).

[0046] As shown in Fig. 4, the switching element 71 includes a first element surface 71A and a second element surface 71B opposite to the first element surface 71A. As shown in Fig. 1, the switching element 71 includes a gate electrode 71G, a source electrode 71S, and a drain electrode 71D provided on the first element surface 71A. Fig. 4 shows the source electrode 71S and the drain electrode 71D of the switching element 71. The switching element 71 is mounted with the first element surface 71A facing the substrate 20.

[0047] The plurality of capacitors 72 are arranged on the opposite side of the light emitting component 40 from the switching element 71. The plurality of capacitors 72 and the switching element 71 are arranged with the light emitting component 40 therebetween. The plurality of capacitors 72 are arranged in a direction intersecting the Y-axis direction, which is the first direction, for example, along the X-axis direction which is perpendicular to the Y-axis direction.

[0048] The plurality of capacitors 72 may be, for example, ceramic capacitors. The plurality of capacitors 72 are rectangular in plan view, with two long sides along the Y-axis direction and two short sides along the X-axis direction. The plurality of capacitors 72 are spaced apart from each other and arranged in a row in the X-axis direction with their long sides adjacent to each other. As shown in FIG. 4 , the capacitors 72 include a first electrode 72A and a second electrode 72B. The first electrode 72A is located at one end of the capacitor 72 in the Y-axis direction, and the second electrode 72B is located at the other end of the capacitor 72 in the Y-axis direction.

[0049] The light emitting device 10 includes a protection diode 73 that protects the light emitting chip 51 of the light emitting component 40. In one example, the protection diode 73 is mounted on the first board surface 21 of the substrate 20. The protection diode 73 is arranged in the X-axis direction relative to the light emitting component 40 in a planar view. It can be said that the light emitting component 40 and the protection diode 73 are arranged side by side in the X-axis direction in a planar view. The protection diode 73 is arranged adjacent to or close to the light emitting component 40 in the X-axis direction.

[0050] The light emitting device 10 includes a gate driver 76 for driving the switching element 71. The gate driver 76 is disposed adjacent to or in close proximity to the switching element 71. In one example, the gate driver 76 is mounted on the first substrate surface 21 of the substrate 20. In one example, the gate driver 76 is disposed spaced apart from the switching element 71 in the X-axis direction in a plan view.

[0051] The light emitting device 10 may include a signal input connector 83 to which a pulse signal is supplied. The signal input connector 83 may be a high-frequency connector such as an SMB connector. The pulse signal is used to control the switching element 71 and is supplied to the gate driver 76. In one example, the signal input connector 83 is mounted on the second substrate surface 22 of the substrate 20. In one example, the signal input connector 83 may be disposed closer to the third side surface 25 of the substrate 20.

[0052] The light emitting device 10 may include a second power connector 82 for supplying operating power to the gate driver 76. In one example, the second power connector 82 is mounted on the second board surface 22 of the board 20. In one example, the second power connector 82 may be arranged closer to the first side surface 23 of the board 20.

[0053] The light emitting device 10 may include a first power connector 81 that supplies a driving current for charging the capacitor 72. In one example, the first power connector 81 is mounted on the second board surface 22 of the board 20. In one example, the first power connector 81 may be disposed closer to the fourth side surface of the board 20.

[0054] The light emitting device 10 may include a current-limiting resistor 74. The current-limiting resistor 74 prevents backflow from the capacitor 72. The light emitting device 10 may include one or more current-limiting resistors 74. The current-limiting resistor 74 may be disposed adjacent to or in close proximity to the first power connector 81. In one example, the current-limiting resistor 74 is mounted on the first board surface 21 of the board 20.

[0055] The light emitting device 10 may include a capacitor 75. The capacitor 75 may be disposed adjacent to or in the vicinity of the first power connector 81. In one example, the capacitor 75 is mounted on the first board surface 21 of the board 20.

[0056] (Conductive Layer) The light emitting device 10 includes a first conductive layer 31, a second conductive layer 32, a first intermediate conductive layer 34, and a second intermediate conductive layer 35. In one example, the second intermediate conductive layer 35 has the same structure as the second conductive layer 32. Therefore, the first conductive layer 31, the first intermediate conductive layer 34, and the second conductive layer 32 will be described.

[0057] 1, the first conductive layer 31 may include a plurality of pattern conductors spaced apart from one another. In one example, the first conductive layer 31 includes first to eighth pattern conductors 101 to 108.

[0058] In one example, the first pattern conductor 101 constitutes a ground conductor. The first pattern conductor 101 is arranged in a central portion in the Y-axis direction on the first substrate surface 21 of the substrate 20. The first pattern conductor 101 is arranged spaced apart from the first side surface 23 and the second side surface 24 of the substrate 20. The first pattern conductor 101 includes a first portion 101A, a second portion 101B, and a third portion 101C that electrically connects the first portion 101A and the second portion 101B. The first portion 101A extends from the fourth side surface 26 of the substrate 20 along the X-axis direction to a central portion of the substrate 20 in the X-axis direction. The second portion 101B is arranged spaced apart from the first portion 101A in the Y-axis direction. The second portion 101B extends from the fourth side surface 26 of the substrate 20 along the X-axis direction. The third portion 101C is a portion provided closer to the third side surface 25 of the substrate 20. The third portion 101C extends along the third side surface 25 of the substrate 20 .

[0059] The second pattern conductor 102 extends along the X-axis direction from the fourth side surface 26 of the substrate 20. The second pattern conductor 102 is disposed apart in the Y-axis direction from the first portion 101A of the first pattern conductor 101. The first portion 101A of the first pattern conductor 101 and the second pattern conductor 102 are used to mount the capacitor 72. The capacitor 72 includes a first electrode 72A and a second electrode 72B. The first electrode 72A of the capacitor 72 is joined to the second pattern conductor 102 by a conductive bonding material SD (see FIG. 4 ). The second electrode 72B of the capacitor 72 is joined to the first portion of the first pattern conductor 101 by a conductive bonding material SD (see FIG. 4 ).

[0060] The third pattern conductor 103 is disposed apart from the second pattern conductor 102 in the Y-axis direction. The third pattern conductor 103 is disposed between the second pattern conductor 102 and the second portion 101B of the first pattern conductor 101.

[0061] The second pattern conductor 102 and the third pattern conductor 103 are used to mount the light emitting component 40. The second pattern conductor 102 includes a first land 102A, and the third pattern conductor 103 includes a plurality of second lands 103A. The first land 102A and the second land 103A are used to connect the first lead 43 and the second lead 44 of the light emitting component 40 shown in FIG. 5 . The first land 102A may be electrically connected to a first through hole 102B that penetrates the substrate 20. The first through hole 102B may be a conductive film provided on the inner surface of a through hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20. The second land 103A may be electrically connected to a second through hole 103B that penetrates the substrate 20. The second through hole 103B may be a conductive film provided on the inner surface of a through hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20.

[0062] 4 , the first lead 43 of the light emitting component 40 is inserted into the first through hole 102B and electrically connected to the first through hole 102B and the first land 102A by the conductive bonding material SD. The second lead 44 of the light emitting component 40 is inserted into the second through hole 103B and electrically connected to the second through hole 103B and the second land 103A by the conductive bonding material SD. As a result, the light emitting component 40 is electrically connected between the second pattern conductor 102 and the third pattern conductor 103.

[0063] The light emitting component 40 is fixed to the substrate 20 by connecting the first lead 43 and the second lead 44 to the first land 102A and the second land 103A. The base 42 of the light emitting component 40 is disposed spaced apart from the first substrate surface 21 of the substrate 20. The distance L11 between the first conductive layer 31 and the first intermediate conductive layer 34 may be smaller than the distance L31 between the first substrate surface 21 of the substrate 20 and the base 42 of the light emitting component 40. The distance L31 between the first substrate surface 21 of the substrate 20 and the base 42 of the light emitting component 40 may be greater than 0 mm and equal to or less than 2 mm. In one example, the distance L31 is 1 mm.

[0064] 1 , a protection diode 73 is electrically connected to the second patterned conductor 102 and the third patterned conductor 103. An anode electrode 73A of the protection diode 73 is joined to the third patterned conductor 103 by a conductive bonding material. A cathode electrode 73B of the protection diode 73 is joined to the second patterned conductor 102 by a conductive bonding material.

[0065] A fourth pattern conductor 104 is disposed between the second pattern conductor 102 and the second portion 101B of the first pattern conductor 101. A first power connector 81 may be connected to the second portion 101B of the first pattern conductor 101 and the fourth pattern conductor 104. The first power connector 81 includes two connector terminals. The fourth pattern conductor 104 includes a third land 104A, and the second portion 101B of the first pattern conductor 101 includes a fourth land 101BA. The third land 104A and the fourth land 101BA are used to connect the two connector terminals.

[0066] The third land 104A may be electrically connected to a third through hole 104B that penetrates the substrate 20. The third through hole 104B may be a conductive film provided on the inner surface of a through hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20. The fourth land 101BA may be electrically connected to a fourth through hole 101BB that penetrates the substrate 20. The fourth through hole 101BB may be a conductive film provided on the inner surface of a through hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20. Connector terminals of the first power connector 81 are inserted into the fourth through hole 101BB and the third through hole 104B, respectively, and are electrically connected to the third land 104A and the fourth land 101BA by a conductive bonding material.

[0067] A capacitor 75 is electrically connected to the fourth pattern conductor 104 and the second portion of the first pattern conductor 101. The capacitor 75 includes a first electrode 75A and a second electrode 75B. The first electrode 75A of the capacitor 75 is joined to the fourth pattern conductor 104 by a conductive bonding material. The second electrode 75B of the capacitor 75 is joined to the second portion 101B of the first pattern conductor 101 by a conductive bonding material.

[0068] A current-limiting resistor 74 is electrically connected to the fourth patterned conductor 104 and the second patterned conductor 102. A first electrode 74A of the current-limiting resistor 74 is joined to the fourth patterned conductor 104 by a conductive bonding material. A second electrode 74B of the current-limiting resistor 74 is joined to the second patterned conductor 102 by a conductive bonding material.

[0069] The third pattern conductor 103 includes a drain connection portion 103C extending toward the second portion 101B of the first pattern conductor 101. The second portion 101B of the first pattern conductor 101 includes portions sandwiching the drain connection portion 103C. A drain electrode 71D of the switching element 71 is electrically connected to the drain connection portion 103C. The switching element 71 is disposed so as to straddle the drain connection portion 103C of the third pattern conductor 103. A source electrode 71S of the switching element 71 is electrically connected to the second portion 101B of the first pattern conductor 101.

[0070] The gate electrode 71G of the switching element 71 is electrically connected to a fifth pattern conductor 105 arranged adjacent to the drain connection portion 103C of the third pattern conductor 103. The fifth pattern conductor 105 extends from the drain connection portion 103C of the third pattern conductor 103 along the X-axis direction.

[0071] The third portion 101C of the first patterned conductor 101 includes a recess in which a part of the fifth patterned conductor 105 is disposed. A sixth patterned conductor 106 and a seventh patterned conductor 107 are disposed in the recess of the first patterned conductor 101. The sixth patterned conductor 106 and the seventh patterned conductor 107 extend along the X-axis direction, for example. The fifth patterned conductor 105, the sixth patterned conductor 106, and the seventh patterned conductor 107 are electrically connected to a gate driver 76.

[0072] The sixth pattern conductor 106 includes a fifth land 106A arranged closer to the third side surface 25 of the substrate 20. The third portion 101C of the first pattern conductor 101 includes a plurality of sixth lands 101CB arranged around the fifth land 106A. The fifth land 106A and the sixth lands 101CB are used to connect the signal input connector 83.

[0073] The fifth land 106A may be electrically connected to a through-hole 106B that penetrates the substrate 20. The through-hole 106B may be a conductive film provided on the inner surface of a through-hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20. The sixth land 101CB may be electrically connected to a through-hole 101CC that penetrates the substrate 20. The through-hole 101CC may be a conductive film provided on the inner surface of a through-hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20. A terminal of the signal input connector 83 is inserted into the through-hole 106B and is electrically connected to the fifth land 106A and the through-hole 106B by a conductive bonding material.

[0074] The terminals (leads) of the signal input connector 83 are inserted into the through holes 101CC and electrically connected to the sixth lands 101CB and the through holes 101CC. The seventh pattern conductor 107 is arranged spaced apart from the sixth pattern conductor 106 in the Y-axis direction. The first pattern conductor 101 includes a fourth portion 101D arranged between the sixth pattern conductor 106 and the seventh pattern conductor 107 in a plan view. The fourth portion 101D of the first pattern conductor 101, the fifth pattern conductor 105, the sixth pattern conductor 106, and the seventh pattern conductor 107 are electrically connected to terminals of the gate driver 76.

[0075] The eighth pattern conductor 108 is disposed between the sixth pattern conductor 106 and the seventh pattern conductor 107 and the fifth pattern conductor 105. For example, the eighth pattern conductor 108 may have a rectangular shape that is long in the Y-axis direction in a plan view. For example, the eighth pattern conductor 108 is connected to a pad of the gate driver 76. The eighth pattern conductor 108 may be used for heat dissipation of the gate driver 76. The eighth pattern conductor 108 may be connected to the first pattern conductor 101. For example, the eighth pattern conductor 108 may be connected to the fourth portion 101D of the first pattern conductor 101.

[0076] The first conductive layer 31 may include a seventh land 109A surrounded by a third portion 101C of the first patterned conductor 101. The third portion 101C of the first patterned conductor 101 may include an eighth land 101CD provided adjacent to the seventh land 109A. The seventh land 109A and the eighth land 101CD are used to connect two connector terminals of the second power connector 82.

[0077] The seventh land 109A may be electrically connected to a through hole 109B that penetrates the substrate 20. The through hole 109B may include a conductive film that is also received on the inner surface of a through hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20. The eighth land 101CD may be electrically connected to a through hole 101CE that penetrates the substrate 20. The through hole 101CE may include a conductive film that is also received on the inner surface of a through hole that penetrates the first to third insulating layers 27A to 27C of the substrate 20. The connector terminals of the second power connector 82 that are inserted into the through holes 109B and 101CE, respectively, are electrically connected to the seventh land 109A, the eighth land 101CD, and the through holes 109B and 101CE by a conductive bonding material.

[0078] 2, the first intermediate conductive layer 34 may include a plurality of intermediate conductors spaced apart from one another. In one example, the first intermediate conductive layer 34 may include first to sixth intermediate conductors 301 to 306.

[0079] The first intermediate conductor 301 has a rectangular shape in a plan view and surrounds the second to sixth intermediate conductors 302 to 306. The first intermediate conductor 301 may form a ground conductor.

[0080] The second intermediate conductor 302 is disposed at a position overlapping the first land 102A of the second pattern conductor 102 shown in Fig. 1. The second intermediate conductor 302 is electrically connected to the first land 102A via the first through hole 102B. The second intermediate conductor 302 is electrically connected to the first lead 43 of the light emitting component 40.

[0081] The third intermediate conductor 303 is disposed at a position overlapping the second land 103A of the third pattern conductor 103 shown in FIG. 1. The first intermediate conductive layer 34 includes a plurality of third intermediate conductors 303. The third intermediate conductors 303 are electrically connected to the second lands 103A via second through holes 103B. The third intermediate conductors 303 are electrically connected to the second leads 44 of the light emitting component 40.

[0082] The fourth intermediate conductor 304 is disposed at a position overlapping the third land 104A of the fourth pattern conductor 104 shown in Fig. 1. The fourth intermediate conductor 304 is electrically connected to the third land 104A via the third through hole 104B. The fourth intermediate conductor 304 is electrically connected to a connector terminal of the first power connector 81.

[0083] The fifth intermediate conductor 305 is disposed at a position overlapping with the fifth land 106A of the sixth pattern conductor 106 shown in Fig. 1. The fifth intermediate conductor 305 is electrically connected to the fifth land 106A via the through hole 106B. The fifth intermediate conductor 305 is electrically connected to a terminal of the signal input connector 83.

[0084] 1 , the sixth intermediate conductor 306 extends in the Y-axis direction from a position overlapping with the seventh land 109A to a position overlapping with the seventh pattern conductor 107. The sixth intermediate conductor 306 is electrically connected to the seventh pattern conductor 107 by a third via conductor 403. The sixth intermediate conductor 306 is also electrically connected to the seventh land 109A by a through hole 109B. The sixth intermediate conductor 306 is electrically connected to a connector terminal of the second power connector 82.

[0085] 3, the second conductive layer 32 may include a plurality of pattern conductors spaced apart from one another. In one example, the second conductive layer 32 may include first to seventh pattern conductors 201 to 207.

[0086] The first pattern conductor 201 has a rectangular shape in a plan view. The first pattern conductor 201 surrounds the second to seventh pattern conductors 202 to 207. The second pattern conductor 202 is disposed at a position overlapping the first land 102A of the second pattern conductor 102 shown in FIG. 1. The second pattern conductor 202 is electrically connected to the first land 102A via a first through hole 102B. The second pattern conductor 202 is electrically connected to the first lead 43 of the light emitting component 40.

[0087] The third pattern conductor 203 is disposed at a position overlapping the second land 103A of the third pattern conductor 103 shown in Fig. 1. The first intermediate conductive layer 34 includes a plurality of third pattern conductors 203. The third pattern conductor 203 is electrically connected to the second land 103A via the second through hole 103B. The third pattern conductor 203 is electrically connected to the second lead 44 of the light emitting component 40.

[0088] The fourth pattern conductor 204 is disposed at a position overlapping the third land 104A of the fourth pattern conductor 104 shown in Fig. 1. The fourth pattern conductor 204 is electrically connected to the third land 104A via a third through hole 104B.

[0089] The fifth pattern conductor 205 is disposed at a position overlapping with the fifth land 106A of the sixth pattern conductor 106 shown in Fig. 1. The fifth pattern conductor 205 is electrically connected to the fifth land 106A via a through hole 106B.

[0090] The sixth pattern conductor 206 is provided at a position overlapping the seventh land 109A shown in Fig. 1. The sixth pattern conductor 206 is electrically connected to the seventh land 109A via a through hole 109B.

[0091] The seventh pattern conductor 207 is disposed at a position overlapping the seventh pattern conductor 107 shown in Fig. 1. The seventh pattern conductor 207 is electrically connected to the seventh pattern conductor 107 by the fourth via conductor 404.

[0092] (Via Conductors) As shown in Figures 1 to 4, the light-emitting component 40 includes a plurality of via conductors 400 provided in the substrate 20. The plurality of via conductors 400 penetrate the substrate 20 from the first substrate surface 21 to the second substrate surface 22 of the substrate 20. The substrate 20 includes a plurality of via holes that penetrate in the Z-axis direction, and the via conductors 400 may be conductive films provided on the inner surfaces of the via holes. Alternatively, the via conductors 400 may be conductors filled in the via holes. The plurality of via conductors 400 electrically connect the first conductive layer 31, the intermediate conductive layer 33, and the second conductive layer 32.

[0093] The plurality of via conductors includes a plurality of first via conductors 401. The plurality of first via conductors 401 are arranged on the opposite side of the capacitor 72 from the light emitting component 40. The plurality of first via conductors 401 are provided in the first portion 101A of the first pattern conductor 101 of the first conductive layer 31. In one example, the plurality of first via conductors 401 are arranged along the X-axis direction. The plurality of first via conductors 401 may form a via row arranged in the X-axis direction. A plurality of via rows may be provided and may be arranged in the Y-axis direction. The plurality of first via rows may form a plurality of via rows. The plurality of first via conductors 401 may be arranged in a matrix. The plurality of first via conductors 401 electrically connect the first portion 101A of the first pattern conductor 101 of the first conductive layer 31, the first intermediate conductor 301 of the first intermediate conductive layer 34, and the first pattern conductor 201 of the second intermediate conductive layer 35 and the second conductive layer 32.

[0094] The plurality of via conductors 400 includes a plurality of second via conductors 402. The plurality of second via conductors 402 are arranged on the opposite side of the switching element 71 from the light emitting component 40. The plurality of second via conductors 402 are provided in the second portion 101B of the first pattern conductor 101 of the first conductive layer 31. In one example, the plurality of second via conductors 402 are arranged along the X-axis direction. The plurality of second via conductors 402 may form a via row arranged in the X-axis direction. A plurality of via rows may be provided and may be arranged in the Y-axis direction. The plurality of second via rows may form a plurality of via rows. The plurality of second via conductors 402 may be arranged in a matrix. The plurality of second via conductors 402 electrically connect the second portion 101B of the first pattern conductor 101 of the first conductive layer 31, the first intermediate conductor 301 of the first intermediate conductive layer 34, and the first pattern conductor 201 of the second intermediate conductive layer 35 and the second conductive layer 32.

[0095] The multiple via conductors 400 include a third via conductor 403 and a fourth via conductor 404. The third via conductor 403 is arranged at a position overlapping the eighth pattern conductor 108 of the first conductive layer 31. The third via conductor 403 electrically connects the eighth pattern conductor 108 of the first conductive layer 31, the first intermediate conductor 301 of the first intermediate conductive layer 34, and the first pattern conductor 201 of the second intermediate conductive layer 35 and the second conductive layer 32.

[0096] The fourth via conductor 404 is disposed at a position overlapping the seventh pattern conductor 107 of the first conductive layer 31. The fourth via conductor 404 electrically connects the seventh pattern conductor 107 of the first conductive layer 31, the sixth intermediate conductor 306 of the first intermediate conductive layer 34, and the sixth pattern conductor 206 of the second intermediate conductive layer 35 and the second conductive layer 32.

[0097] (Light Emitting Device and Circuit Configuration of Light Emitting System) As shown in FIG. 8 , a light emitting system 800 includes a light emitting device 10 , a DC power supply 801 , a control power supply 802 , and a pulse generator 803 .

[0098] The DC power supply 801, the capacitor 75, and the current-limiting resistor 74 are configured to supply current to the light-emitting component 40 and the drive circuit 70. A first electrode 74A of the current-limiting resistor 74 is electrically connected to the positive electrode of the DC power supply 801 and the first electrode of the capacitor 75. A second electrode 74B of the current-limiting resistor 74 is electrically connected to the second electrode 52B (anode electrode) of the light-emitting component 40 and the first electrode 72A of the capacitor 72.

[0099] The gate driver 76 is electrically connected to the gate electrode 71G of the switching element 71. The pulse generator 803 and the control power supply 802 are each electrically connected to the gate driver 76. The pulse generator 803 is configured to output a pulse signal to each of the gate drivers 76 for controlling the switching element 71. The control power supply 802 is configured to apply an operating voltage to each of the gate drivers 76.

[0100] The negative electrode of the DC power supply 801, the second electrode of the capacitor 75, the pulse generator 803, the second electrode 72B of the capacitor 72, the negative electrode of the control power supply 802, and the source electrode 71S of the switching element 71 are electrically connected to the ground terminal.

[0101] A drain electrode 71D of the switching element 71 is electrically connected to the second lead 44 of the light emitting component 40 and an anode electrode 73A of the protection diode 73. A cathode electrode 73B of the protection diode 73 is electrically connected to the first lead 43 of the light emitting component 40.

[0102] In the light-emitting device 10 configured as described above, when the switching element 71 of the drive circuit 70 is in the OFF state, the capacitor 72 is charged by the DC power supply 801. When the switching element 71 switches from the OFF state to the ON state, a current flows from the capacitor 72 to the light-emitting component 40. The switching element 71 is repeatedly turned ON and OFF by a pulsed control signal supplied from the pulse generator 803, causing the light-emitting component 40 to emit pulsed laser light. In this manner, the drive circuit 70 is configured to drive the light-emitting component 40.

[0103] 9 shows a current path CP1 of a current flowing through the switching element 71 and the capacitor 72 of the drive circuit 70 and the semiconductor light emitting element 50 of the light emitting component 40. The current path CP1 is indicated by a bold arrow.

[0104] The current path CP1 is generally configured as a loop in which current flows from the first electrode 72A of the capacitor 72 through the light emitting component 40, the switching element 71, and the first intermediate conductive layer 34 to the second electrode 72B of the capacitor 72. More specifically, the current in the current path CP1 flows through the first electrode 72A of the capacitor 72, the second pattern conductor 102 of the first conductive layer 31, the first lead 43 of the light emitting component 40, the base 42, the submount 55, the light emitting chip 51, the wire 46, the second lead 44, the third pattern conductor 103 of the first conductive layer 31, the switching element 71, the second portion 101B of the first pattern conductor 101 of the first conductive layer 31, the second via conductor 402, the first intermediate conductive layer 34, the first via conductor 401, the first portion 101A of the first pattern conductor 101 of the first conductive layer 31, and the second electrode 72B of the capacitor 72, in this order.

[0105] The current path CP1 is composed of the light-emitting component 40, the switching element 71, the capacitor 72, a first conductive layer 31 provided on the first substrate surface 21 of the substrate 20, and a first intermediate conductive layer 34 embedded in the substrate 20 and close to the first conductive layer 31. The light-emitting component 40 is electrically connected to the first conductive layer 31 by connecting the first lead 43 and the second lead 44 to the first land 102A and the second land 103A. The semiconductor light-emitting element 50 of the light-emitting component 40 is bonded to the first surface 42A of the base 42 of the light-emitting component 40. Therefore, the light-emitting device 10 can bring the light-emitting chip 51 of the semiconductor light-emitting element 50 close to the first conductive layer 31 by connecting the semiconductor light-emitting element 50 to the first conductive layer 31 provided on the first substrate surface 21 of the substrate 20 using the base 42, the first lead 43, and the second lead 44. Furthermore, the area of ​​the region surrounded by the current path CP1, which supplies current to the light-emitting chip 51 of the semiconductor light-emitting element 50, can be reduced when viewed from the X-axis direction. The area of ​​the region surrounded by the current path CP1 affects the parasitic inductance of the current path CP1, and the smaller the area of ​​the region, the smaller the parasitic inductance. Therefore, in the light-emitting device 10, the parasitic inductance can be reduced, and the effects of the parasitic inductance can be reduced.

[0106] (Effects of First Embodiment) As described above, the light emitting device 10 of the first embodiment provides the following effects. (1-1) The light emitting device 10 includes an insulating substrate 20 including a first substrate surface 21 and a second substrate surface 22 opposite the first substrate surface 21. A first conductive layer 31 is provided on the first substrate surface 21. One or more intermediate conductive layers 33 are embedded in the substrate 20. A second conductive layer 32 is provided on the second substrate surface 22. A plurality of via conductors 400 are provided in the substrate 20 and electrically connect the first conductive layer 31, the intermediate conductive layer 33, and the second conductive layer 32. A light emitting component 40 is mounted on the first substrate surface 21 and electrically connected to the first conductive layer 31. A drive circuit 70 that drives the light emitting component 40 is mounted on the first substrate surface 21 and electrically connected to the first conductive layer 31.

[0107] The light emitting component 40 includes a base 42 including a first surface 42A and a second surface 42B opposite to the first surface 42A, a semiconductor light emitting element 50 mounted on the first surface 42A and electrically connected to the base 42, a first lead 43 connected to the second surface 42B, and a second lead 44 that passes through the base 42 and is electrically insulated from the base 42. The light emitting component 40 is electrically connected to the first conductive layer 31 by the first lead 43 and the second lead 44. The semiconductor light emitting element 50 is bonded to the first surface 42A of the base 42.

[0108] The current path CP1 that passes current to the light-emitting chip 51 of the light-emitting component 40 is composed of the light-emitting component 40, the switching element 71, the capacitor 72, a first conductive layer 31 provided on the first substrate surface 21 of the substrate 20, and a first intermediate conductive layer 34 embedded in the substrate 20 and close to the first conductive layer 31. In the light-emitting device 10, in which the semiconductor light-emitting element 50 is connected to the first conductive layer 31 provided on the first substrate surface 21 of the substrate 20 using the base 42, the first lead 43, and the second lead 44, the light-emitting chip 51 of the semiconductor light-emitting element 50 can be brought closer to the first conductive layer 31. Therefore, the area of ​​the region surrounded by the current path CP1 that supplies current to the light-emitting chip 51 of the semiconductor light-emitting element 50 can be reduced when viewed from the X-axis direction. In the light-emitting device 10, parasitic inductance can be reduced, thereby reducing the effects of parasitic inductance.

[0109] (1-2) The light emitting component 40 is fixed to the substrate 20 by connecting the first lead 43 and the second lead 44 to the first land 102A and the second land 103A. The base 42 of the light emitting component 40 is disposed at a distance from the first substrate surface 21 of the substrate 20. The distance L11 between the first conductive layer 31 and the first intermediate conductive layer 34 is smaller than the distance L31 between the first substrate surface 21 of the substrate 20 and the base 42 of the light emitting component 40. Therefore, the area of ​​the region surrounded by the current path CP1 that supplies current to the light emitting chip 51 of the semiconductor light emitting element 50 can be further reduced. Furthermore, in the light emitting device 10, parasitic inductance can be reduced, thereby reducing the effects of parasitic inductance.

[0110] (1-3) The light emitting component 40 has a semiconductor light emitting element 50 mounted on a first surface 42A of a base 42. The light emitting component 40 is fixed to the substrate 20 by a first lead 43 connected to the base 42 and a second lead 44 fixed to the base 42. In this way, the light emitting component 40 including the first lead 43 and the second lead 44 allows the semiconductor light emitting element 50 to be easily mounted on the substrate 20.

[0111] (1-4) The light emitting component 40 includes a cover 47 fixed to the stem 41. The cover 47 covers the semiconductor light emitting element 50 mounted on the first surface 42A of the base 42 of the stem 41. Therefore, the semiconductor light emitting element 50 can be protected.

[0112] (1-5) The light emitting component 40 includes a plurality of second leads 44 that penetrate the base 42 and are electrically insulated from the base 42. The plurality of second leads 44 are electrically connected to the light emitting chip 51 of the semiconductor light emitting element 50 by a plurality of wires 46. A current flows to the light emitting chip 51 through the plurality of second leads 44 and the plurality of wires 46. In this way, by using the plurality of second leads 44 and the plurality of wires 46, it is possible to reduce parasitic inductance in the current path CP1 that passes a current to the semiconductor light emitting element 50.

[0113] (1-6) The first portion 101A of the first pattern conductor 101 of the first conductive layer 31, to which the second electrode 72B of the capacitor 72 is connected, is electrically connected to the first intermediate conductive layer 34 by a plurality of first via conductors 401. By providing a plurality of first via conductors 401, the parasitic inductance in the current path CP1 that passes a current through the semiconductor light emitting element 50 can be reduced.

[0114] (1-7) The light-emitting component 40 includes a semiconductor light-emitting element 50 mounted on the first surface 42A of the base 42. The semiconductor light-emitting element 50 includes a light-emitting chip 51 that is a surface-emitting laser element. Therefore, it is possible to easily obtain a light-emitting device 10 that emits laser light in a direction perpendicular to the first substrate surface 21 of the substrate 20.

[0115] [Second embodiment] A light emitting device 10 of a second embodiment will be described with reference to Figures 10 to 13. The light emitting device 10 of the second embodiment differs from the light emitting device 10 of the first embodiment mainly in the arrangement of the light emitting components 40 and the switching elements 71 and capacitors 72 of the drive circuit 70. Below, the second embodiment will be described, focusing on the differences from the light emitting device 10 of the first embodiment. Note that components common to the light emitting device 10 of the first embodiment are given the same reference numerals, and detailed description thereof will be omitted.

[0116] Fig. 10 is a schematic plan view of an exemplary light emitting device according to a second embodiment. Fig. 11 is a schematic plan view of an intermediate conductive layer of the light emitting device of Fig. 10. Fig. 12 is a schematic plan view of a second conductive layer of the light emitting device of Fig. 10. Fig. 13 is a schematic cross-sectional view of the light emitting device taken along line F13-F13 of Fig. 10.

[0117] (Overall Configuration of Light-Emitting Device) The light-emitting device 10 includes a substrate 20, a light-emitting component 40, and a drive circuit 70. The drive circuit 70 includes a switching element 71 and one or more capacitors 72.

[0118] The capacitor 72 and the light emitting component 40 are arranged side by side in a first direction in a plan view. The first direction may be the Y-axis direction, for example. The capacitor 72 is provided in a position adjacent to or close to the light emitting component 40 in the Y-axis direction. The switching element 71 is arranged on the opposite side of the capacitor 72 from the light emitting component 40.

[0119] It can be said that the light emitting component 40, the switching element 71, and the capacitor 72 are arranged side by side in the Y-axis direction. It can be said that the light emitting component 40 and the switching element 71 are arranged so as to sandwich the capacitor 72 therebetween.

[0120] (Conductive Layer) The light emitting device 10 of the second embodiment includes a first conductive layer 31, a second conductive layer 32, a first intermediate conductive layer 34, and a second intermediate conductive layer 35. In one example, the second intermediate conductive layer 35 has the same structure as the second conductive layer 32. Therefore, the first conductive layer 31, the first intermediate conductive layer 34, and the second conductive layer 32 will be described.

[0121] 10 , the first conductive layer 31 may include a plurality of pattern conductors spaced apart from one another. In one example, the first conductive layer 31 includes first to eighth pattern conductors 101 to 108 and a ninth pattern conductor 110.

[0122] The first pattern conductor 101 includes a fifth portion 101E disposed apart from the first portion 101A in the Y-axis direction. The fifth portion 101E is joined to a source electrode 71S of the switching element 71. As shown in Fig. 13 , the source electrode 71S of the switching element 71 is joined to the fifth portion 101E of the first pattern conductor 101 by a conductive bonding material SD.

[0123] 10 , the ninth pattern conductor 110 is disposed in the Y-axis direction between the first portion 101A of the first pattern conductor 101 and the fifth portion 101E of the first pattern conductor 101. The ninth pattern conductor 110 and the fifth portion 101E of the first pattern conductor 101 are arranged apart from each other in the Y-axis direction relative to the first portion 101A of the first pattern conductor 101.

[0124] The ninth pattern conductor 110 includes a connection portion 110A extending toward the fifth portion 101E of the first pattern conductor 101. The connection portion 110A of the ninth pattern conductor 110 is electrically connected to the drain electrode 71D of the switching element 71. As shown in Fig. 13 , the drain electrode 71D of the switching element 71 is joined to the connection portion 110A of the ninth pattern conductor 110 by a conductive bonding material SD.

[0125] 10 , the second pattern conductor 102 includes a first portion 121 that is disposed apart in the Y-axis direction from the first portion 101A of the first pattern conductor 101. The first portion 121 of the second pattern conductor 102 is a portion where the current limiting resistor 74 is connected between the first portion 121 and the fourth pattern conductor 104.

[0126] The second pattern conductor 102 includes a second portion 122 that is arranged apart in the Y-axis direction from the fifth portion 101E of the first pattern conductor 101. The second portion 122 of the second pattern conductor 102 is arranged between the fifth portion 101E of the first pattern conductor 101 and the third pattern conductor 103 in the Y-axis direction.

[0127] The capacitor 72 is electrically connected to the second portion 122 of the second patterned conductor 102 and the fifth portion 101E of the first patterned conductor 101. The capacitor 72 includes a first electrode 72A and a second electrode 72B. As shown in Fig. 13 , the first electrode 72A of the capacitor 72 is joined to the second portion 122 of the second patterned conductor 102 by a conductive bonding material SD. The second electrode 72B of the capacitor 72 is joined to the fifth portion 101E of the first patterned conductor 101 by a conductive bonding material SD.

[0128] As shown in Fig. 10 , the light emitting component 40 is electrically connected to the second portion 122 of the second pattern conductor 102 and the third pattern conductor 103. The second portion 122 of the second pattern conductor 102 includes a first land 102A, and the third pattern conductor 103 includes a plurality of second lands 103A. As shown in Fig. 13 , the first lead 43 of the light emitting component 40 is electrically connected to the first land 102A by a conductive bonding material SD. The second lead 44 of the light emitting component 40 is electrically connected to the second land 103A by a conductive bonding material SD. As a result, the light emitting component 40 is electrically connected between the second portion 122 of the second pattern conductor 102 and the third pattern conductor 103.

[0129] 10 , a protection diode 73 is electrically connected to the second portion 122 of the second pattern conductor 102 and the third pattern conductor 103. An anode electrode 73A of the protection diode 73 is joined to the third pattern conductor 103 by a conductive bonding material. A cathode electrode 73B of the protection diode 73 is joined to the second portion 122 of the second pattern conductor 102 by a conductive bonding material.

[0130] 11, the first intermediate conductive layer 34 may include a plurality of intermediate conductors spaced apart from one another. In one example, the first intermediate conductive layer 34 may include first to sixth intermediate conductors 301 to 306.

[0131] The third intermediate conductor 303 has a rectangular shape that is elongated in the Y-axis direction in plan view. The third intermediate conductor 303 is arranged to surround the second intermediate conductor 302. The third intermediate conductor 303 extends from a position overlapping with the third pattern conductor 103 of the first conductive layer 31 shown in FIG. 10 to a position overlapping with the ninth pattern conductor 110 of the first conductive layer 31. The second land 103A of the third pattern conductor 103 of the first conductive layer 31 shown in FIG. 10 overlaps with the third intermediate conductor 303. The third intermediate conductor 303 is electrically connected to the second land 103A of the third pattern conductor 103 shown in FIG. 10 by a second through hole 103B.

[0132] 12, the second conductive layer 32 may include a plurality of pattern conductors spaced apart from one another. In one example, the second conductive layer 32 may include first to seventh pattern conductors 201 to 207.

[0133] The third pattern conductor 203 has the same shape as the third intermediate conductor 303 of the first intermediate conductive layer 34. The third pattern conductor 203 has a rectangular shape that is long in the Y-axis direction in a plan view. The third pattern conductor 203 is arranged to surround the second pattern conductor 202. The third pattern conductor 203 extends from a position overlapping the third pattern conductor 203 of the first conductive layer 31 shown in FIG. 10 to a position overlapping the ninth pattern conductor 110 of the first conductive layer 31. The second land 103A of the third pattern conductor 103 of the first conductive layer 31 shown in FIG. 10 overlaps the third pattern conductor 203 of the second conductive layer 32. The third pattern conductor 203 of the second conductive layer 32 is electrically connected to the second land 103A of the first conductive layer 31 by a second through hole 103B.

[0134] (Via Conductors) As shown in FIGS. 10 and 14 , the multiple first via conductors 401 are arranged on the opposite side of the switching element 71 from the capacitor 72. The multiple first via conductors 401 are provided in the ninth pattern conductor 110 of the first conductive layer 31. In one example, the multiple first via conductors 401 are aligned along the X-axis direction. The multiple first via conductors 401 may form a via row aligned in the X-axis direction. A plurality of via rows may be provided and aligned in the Y-axis direction. The multiple first via rows may form multiple via rows. The multiple first via conductors 401 may be arranged in a matrix. The multiple first via conductors 401 electrically connect the ninth pattern conductor 110 of the first conductive layer 31, the third intermediate conductor 303 of the first intermediate conductive layer 34, and the third pattern conductor 203 of the second intermediate conductive layer 35 and the second conductive layer 32.

[0135] The plurality of second via conductors 402 are arranged on the opposite side of the capacitor 72 with respect to the light emitting component 40. The plurality of second via conductors 402 are provided in the third pattern conductor 103 of the first conductive layer 31. In one example, the plurality of second via conductors 402 are aligned along the X-axis direction. The plurality of second via conductors 402 may form a via row aligned in the X-axis direction. A plurality of via rows may be provided and aligned in the Y-axis direction. The plurality of second via rows may form a plurality of via rows. The plurality of second via conductors 402 may be arranged in a matrix. The plurality of second via conductors 402 electrically connect the third pattern conductor 103 of the first conductive layer 31, the third intermediate conductor 303 of the first intermediate conductive layer 34, and the third pattern conductor 203 of the second intermediate conductive layer 35 and the second conductive layer 32.

[0136] (Operation of Second Embodiment) In FIG. 13, a current path CP2 of a current flowing through the switching element 71 and capacitor 72 of the drive circuit 70 and the semiconductor light emitting element 50 of the light emitting component 40 is indicated by a thick arrow.

[0137] The current path CP2 is roughly configured as a loop in which current flows from the first electrode 72A of the capacitor 72, through the light-emitting component 40, the third intermediate conductor 303 of the first intermediate conductive layer 34, and the switching element 71 to the second electrode 72B of the capacitor 72.

[0138] The current path CP2 is configured in a loop shape in which current flows in the following order: the first electrode 72A of the capacitor 72, the second portion 122 of the second pattern conductor 102 of the first conductive layer 31, the first lead 43 of the light-emitting component 40, the base 42 of the light-emitting component 40, the submount 55, the light-emitting chip 51, the wire 46, the second lead 44, the third pattern conductor 103 of the first conductive layer 31, the second via conductor 402, the third intermediate conductor 303 of the first intermediate conductive layer 34, the first via conductor 401, the ninth pattern conductor 110 of the first conductive layer 31, the switching element 71, the fifth portion 101E of the first pattern conductor 101 of the first conductive layer 31, and the second electrode 72B of the capacitor 72.

[0139] (Effects of Second Embodiment) As described above, the light emitting device 10 of the second embodiment has the following effects. (2-1) In the light emitting device 10 of the second embodiment, the light emitting component 40, the switching element 71, and the capacitor 72 are aligned in the Y-axis direction. The light emitting component 40 and the switching element 71 are arranged to sandwich the capacitor 72. The light emitting device 10 of the second embodiment can achieve the same effects as the light emitting device 10 of the first embodiment.

[0140] 14 to 18, a light emitting device 10 according to a third embodiment will be described. The light emitting device 10 according to the third embodiment differs from the light emitting device 10 according to the second embodiment mainly in the configuration of the light emitting component 500. The following description of the third embodiment will focus on the differences from the light emitting device 10 according to the second embodiment. Note that components common to the light emitting device 10 according to the second embodiment will be given the same reference numerals, and detailed description thereof will be omitted.

[0141] Fig. 14 is a schematic plan view of an exemplary light emitting device according to a third embodiment. Fig. 15 is a schematic plan view of an intermediate conductive layer of the light emitting device of Fig. 14. Fig. 16 is a schematic plan view of a second conductive layer of the light emitting device of Fig. 14. Fig. 17 is a schematic plan view of the light emitting component of Fig. 14. Fig. 18 is a schematic cross-sectional view of the light emitting component taken along line F18-F18 of Fig. 17.

[0142] (Overall Configuration of Light-Emitting Device) The light-emitting device 10 includes a substrate 20, a light-emitting component 500, and a drive circuit 70. The drive circuit 70 includes a switching element 71 and one or more capacitors 72.

[0143] (Light Emitting Component) As shown in FIGS. 17 and 18, the light emitting component 500 includes a stem 41, a semiconductor light emitting element 510, and a reflecting element 520.

[0144] The stem 41 supports the semiconductor light emitting element 510. The stem 41 also electrically connects the semiconductor light emitting element 510 to the substrate 20. The stem 41 includes a base 42, a first lead 43, a second lead 44, and an insulating material 45.

[0145] In the third embodiment, the base 42 includes two through holes 42C that penetrate the base 42 in the Z-axis direction. The through holes 42C are generally circular when viewed from the Z-axis direction, and have a diameter large enough to insert the second lead 44. The through holes 42C are formed to fix the second lead 44 to the base 42. As shown in FIG. 17 , the two through holes 42C may be arranged on a straight line that passes through the center of the base 42 in a plan view.

[0146] 18, the first lead 43 is connected to the base 42. The two second leads 44 are inserted into the plurality of through holes 42C, respectively. An insulating material 45 is filled between each of the second leads 44 and the through holes 42C.

[0147] The semiconductor light emitting element 510 is mounted on the first surface 42A of the base 42. In one example, the semiconductor light emitting element 510 is disposed at a position overlapping the first lead 43 in a plan view. The semiconductor light emitting element 510 includes a light emitting chip 511 and a submount 517.

[0148] The light emitting chip 511 is, for example, a semiconductor laser chip. The submount 517 is connected to the first surface 42A of the base 42. The light emitting chip 511 is electrically connected to the base 42 by the submount 517.

[0149] The light-emitting chip 511 is electrically connected to the second lead 44 by the wire 46. In one example, a first end of the wire 46 is connected to the light-emitting chip 511, and a second end of the wire 46 is connected to the tip surface 44B of the second lead 44. The wire 46 is made of a material containing Au, for example. In the light-emitting component 500, a current supply path to the light-emitting chip 511 is formed by the first lead 43, the base 42, the submount 517, the light-emitting chip 511, the wire 46, and the second lead 44.

[0150] The light-emitting chip 511 is a laser diode that emits laser light in a predetermined wavelength band. The light-emitting chip 511 is an edge-emitting laser (EEL). The light-emitting chip 511 includes a first element surface 512 and a second element surface 513 opposite the first element surface 512. The light-emitting chip 511 includes a first electrode 514 provided on the first element surface 512 and a second electrode 515 provided on the second element surface 513. The first electrode 514 corresponds to an anode electrode, and the second electrode 515 corresponds to a cathode electrode.

[0151] 17, the light-emitting chip 511 has a generally rectangular shape that is long in the Y-axis direction in a plan view. As shown in Fig. 17 and Fig. 18, the light-emitting chip 511 is disposed with the end surface 516 that emits laser light facing toward the center of the base 42.

[0152] The reflecting element 520 is fixed to the first surface 42A of the base 42. The reflecting element 520 is, for example, a light reflecting mirror. The reflecting element 520 includes a fixing surface 521 fixed to the base 42 and a reflecting surface 522 that forms a predetermined angle with respect to the fixing surface 521. The angle formed between the fixing surface 521 and the reflecting surface 522 may be 45 degrees. The reflecting element 520 is arranged with the reflecting surface 522 facing the end surface 516 of the light-emitting chip 511. The reflecting element 520 is arranged to reflect the laser light emitted from the light-emitting chip 511 in a direction perpendicular to the first surface 42A of the base 42.

[0153] The reflective element 520 may be a diffraction grating. The diffraction grating may be either a reflective or transmissive type. Similar to a light-reflecting mirror, a reflective diffraction grating may be configured to reflect the laser light emitted from the light-emitting chip 511 in a direction perpendicular to the first surface 42A of the base 42. A transmissive diffraction grating may be configured to emit the laser light emitted from the light-emitting chip 511 in a direction perpendicular to the first surface 42A of the base 42 by refracting light.

[0154] 14 , the second portion 122 of the second pattern conductor 102 includes two first lands 102A. The third pattern conductor 103 includes one second land 103A. The first lead 43 of the light emitting component 500 is electrically connected to the second land 103A by a conductive adhesive. The two second leads 44 of the light emitting component 500 are electrically connected to the two first lands 102A by a conductive adhesive. As a result, the light emitting component 500 is electrically connected between the third pattern conductor 103 and the second portion 122 of the second pattern conductor 102.

[0155] 15, the first intermediate conductive layer 34 includes two second intermediate conductors 302. The two second intermediate conductors 302 are arranged at positions overlapping the two first lands 102A of the second portion 122 of the second pattern conductor 102 shown in Fig. 14. The two second intermediate conductors 302 are electrically connected to the first lands 102A shown in Fig. 14 by first through holes 102B.

[0156] (Second Conductive Layer) As shown in Fig. 16, the second conductive layer 32 includes two second patterned conductors 202. The two second patterned conductors 202 are arranged at positions overlapping with the two first lands 102A of the second portion 122 of the second patterned conductor 102 shown in Fig. 14. The two second patterned conductors 202 are electrically connected to the first lands 102A shown in Fig. 14 by first through holes 102B.

[0157] (Effects of the Third Embodiment) As described above, the light emitting device 10 of the third embodiment has the following effects: (3-1) The light emitting device 10 of the third embodiment includes a semiconductor light emitting element 510 in which a light emitting chip 511, which is an edge-emitting laser element, is mounted on the first surface 42A of the base 42. The light emitting device 10 of the third embodiment can also achieve the same effects as the light emitting device 10 of the first embodiment.

[0158] (3-2) The light-emitting component 500 includes a reflecting element 520 mounted on the base 42. The reflecting element 520 reflects the laser light emitted from the end surface 516 of the light-emitting chip 511 in a direction perpendicular to the first surface 42A of the base 42. Therefore, it is possible to easily obtain the light-emitting device 10 that emits laser light in a direction perpendicular to the first substrate surface 21 of the substrate 20.

[0159] (Modifications) The above embodiment can be modified, for example, as follows. The above embodiment and each of the following modifications can be combined with each other as long as no technical contradiction occurs. In the following modifications, parts that are common to the above embodiment will be assigned the same reference numerals as in the above embodiment, and their description will be omitted.

[0160] The configuration of the light emitting components 40, 500 may be modified as appropriate. Figures 19 and 20 show a light emitting component 550 that is a modified example of the light emitting component 40 of the first embodiment. The base 42 of the light emitting component 550 includes a mounting recess 551. The mounting recess 551 is recessed in the first surface 42A of the base 42 toward the second surface 42B of the base 42. The mounting recess 551 may have a rectangular shape in a planar view. The shape of the mounting recess 551 in a planar view may be any shape, such as a circular shape. The mounting recess 551 is larger than the outer shape of the semiconductor light emitting element 50 in a planar view. The semiconductor light emitting element 50 is mounted on a bottom surface 552 of the mounting recess 551.

[0161] 20 , the depth L41 of the mounting recess 551 may be set so that at least a portion of the semiconductor light emitting element 50 is disposed within the mounting recess 551. In one example, the depth L41 of the mounting recess 551 may be set so that the height L42 of the first electrode 52A of the light emitting chip 51 of the semiconductor light emitting element 50 is equal to the height L21 of the tip surface 44B of the second lead 44, with respect to the first surface 42A of the base 42. The height L42 of the first electrode 52A of the light emitting chip 51 may be the distance in the Z-axis direction from the first surface 42A of the base 42 to the upper surface of the first electrode 52A of the light emitting chip 51. The height L21 of the tip surface 44B of the second lead 44 may be the distance in the Z-axis direction from the first surface 42A of the base 42 to the tip surface 44B of the second lead 44.

[0162] A first end of the wire 46 is connected to a first electrode 52A provided on the first element surface 51A of the light-emitting chip 51, and a second end of the wire 46 is connected to a tip surface 44B of the second lead 44. The length of the wire 46 can be shortened by making the height L42 of the first electrode 52A of the light-emitting chip 51 equal to the height L21 of the tip surface 44B of the second lead 44. This makes it possible to further reduce parasitic inductance in the current path that supplies current to the light-emitting chip 51 of the semiconductor light-emitting element 50.

[0163] 17 and 18 , a mounting recess 551 may be provided in the base 42. The mounting recess 551 may have a size that allows the semiconductor light emitting element 510 to be mounted on the bottom surface 552, and the reflecting element 520 may be mounted on the first surface 42A of the base 42. The mounting recess 551 may also have a size that allows the semiconductor light emitting element 510 and the reflecting element 520 to be mounted on the bottom surface 552.

[0164] 21 and 22 show a modified light emitting component 600. The modified light emitting component 600 includes a stem 601 and a semiconductor light emitting element 510. The stem 601 and a heat sink 602 are also included.

[0165] The heat sink 602 is provided on the first surface 42A of the base 42. In this embodiment, the heat sink 602 is formed in a roughly fan shape. The heat sink 602 includes a support surface 603 in its center. The support surface 603 is provided for mounting the semiconductor light emitting element 510. The support surface 603 is a flat surface extending along the Z-axis direction and the X-axis direction. The heat sink 602 is made of a material containing Fe, for example. In this embodiment, the heat sink 602 is formed integrally with the base 42.

[0166] The second lead 44 includes a connection portion 44D and a terminal portion 44C. The connection portion 44D includes a connection surface 44E to which the wire 46 is connected. The connection surface 44E may be a flat surface along the Z-axis direction and the X-axis direction, similar to the support surface 603 of the heat sink 602.

[0167] The semiconductor light emitting element 510 is mounted on the support surface 603 of the heat sink 602. The semiconductor light emitting element 510 includes a light emitting chip 511 and a submount 517. The light emitting chip 511 is a laser diode that emits laser light in a predetermined wavelength band. The light emitting chip 511 is an edge-emitting laser element (EEL). The light emitting chip 511 is mounted on the heat sink 602 with an end surface 516 that emits the laser light facing in the Z-axis direction perpendicular to the first surface 42A of the base 42, and away from the first surface 42A of the base 42. The semiconductor light emitting element 510 includes the light emitting chip 511, which is an edge-emitting laser element, and is arranged to emit laser light in a direction perpendicular to the first surface 42A of the base 42.

[0168] In a light emitting device using the light emitting component 500 including the semiconductor light emitting elements 510 arranged in this manner, the inductance in the current path can be reduced, similarly to the above embodiment.

[0169] The arrangement of components included in the drive circuit 70 may be modified as appropriate. FIG. 23 shows a schematic planar structure of a modified light-emitting device 10. In the modified light-emitting device 10, the substrate 20 has a generally rectangular shape in which the length in the Y-axis direction is longer than the length in the X-axis direction. The switching element 700 of the drive circuit 70 includes a gate electrode 700G and three source electrodes 700S arranged along a first side edge 701, and four drain electrodes 700D arranged along a second side edge 702 opposite the first side edge 701. In one example, the switching element 700 may be configured as a semiconductor package including a lateral transistor chip. The switching element 700 is arranged such that the drain electrode 700D is closer to the light-emitting component 40, and the gate electrode 700G and the source electrode 700S are located on the opposite side of the drain electrode 700D from the light-emitting component 40. The gate driver 76 is spaced apart from the gate electrode 700G of the switching element 700 in the Y-axis direction.

[0170] The fifth land 106A and the sixth land 101CB, to which the signal input connector 83 is connected, are arranged closer to the first side surface 23 of the substrate 20 than the gate driver 76. The sixth pattern conductor 106 including the fifth land 106A extends toward the gate driver 76.

[0171] FIG. 24 shows a schematic structure of a modified light-emitting device 10. In the modified light-emitting device 10, a switching element 710 of a drive circuit 70 includes a gate electrode 710G and three source electrodes 710S arranged along a first side 711, and four drain electrodes 710D arranged along a second side 712 opposite the first side 711. In one example, the switching element 710 may be configured as a semiconductor package including a vertical transistor chip. The switching element 710 is arranged such that the drain electrode 710D is located closer to the light-emitting component 40, and the gate electrode 710G and the source electrode 710S are located on the opposite side of the drain electrode 710D from the light-emitting component 40. The gate driver 76 is arranged spaced apart from the gate electrode 710G of the switching element 710 in the Y-axis direction.

[0172] The fifth land 106A and the sixth land 101CB to which the signal input connector 83 is connected are arranged closer to the second side surface 24 of the substrate 20 than the gate driver 76. In one example, the fifth land 106A and the sixth land 101CB to which the signal input connector 83 is connected are arranged so as to overlap with the light emitting component 40 and the switching element 710 when viewed from the X-axis direction. The sixth pattern conductor 106 including the fifth land 106A extends toward the gate driver 76.

[0173] FIG. 25 shows a schematic structure of a modified light-emitting device 10. In the modified light-emitting device 10, the switching element 720 of the drive circuit 70 includes a gate electrode 720G and two drain electrodes 720D arranged along a first side 721, and a source electrode 720S1 and two drain electrodes 720D arranged along a second side 722 opposite the first side 721. The switching element 720 further includes a source electrode 720S2 arranged between the gate electrode 720G and the source electrode 720S1. In one example, the switching element 720 may be configured as a semiconductor package including a vertical transistor chip. The switching element 720 is arranged such that the drain electrode 720D is located closer to the light-emitting component 40, and the gate electrode 720G and the source electrodes 720S1 and 720S2 are located on the opposite side of the drain electrode 720D from the light-emitting component 40. The gate driver 76 is disposed at a position spaced apart in the Y-axis direction from the gate electrode 720 G of the switching element 720 and closer to the third side surface 25 of the substrate 20 .

[0174] The fifth land 106A and the sixth land 101CB to which the signal input connector 83 is connected are arranged closer to the second side surface 24 of the substrate 20 than the gate driver 76. In one example, the fifth land 106A and the sixth land 101CB to which the signal input connector 83 is connected are arranged so as to overlap with the light emitting component 40 and the switching element 710 when viewed from the X-axis direction. The sixth pattern conductor 106 including the fifth land 106A extends toward the gate driver 76.

[0175] The term "on" as used in this disclosure includes both the meanings of "on" and "above," unless the context clearly indicates otherwise. Thus, the phrase "a first layer is formed on a second layer" is intended to mean that in some embodiments, the first layer may be disposed directly on the second layer in contact with the second layer, while in other embodiments, the first layer may be disposed above the second layer without contacting the second layer. In other words, the term "on" does not exclude a structure in which another layer is formed between the first and second layers.

[0176] The Z-axis direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure (for example, the structure shown in FIG. 1 ) are not limited to the "up" and "down" in the Z-axis direction described in this disclosure being "up" and "down" in the vertical direction. For example, the X-axis direction may be the vertical direction, or the Y-axis direction may be the vertical direction.

[0177] (Supplementary Notes) The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding and not intending to be limiting, the components described in the Supplementary Notes are given the reference symbols of the corresponding components in the embodiments. The reference symbols are shown as examples to aid understanding, and the components described in each Supplementary Note should not be limited to the components indicated by the reference symbols.

[0178] (Supplementary Note 1) An insulating substrate (20) including a first substrate surface (21) and a second substrate surface (22) opposite to the first substrate surface (21); a first conductive layer (31) provided on the first substrate surface (21); one or more intermediate conductive layers (33, 34, 35) embedded in the substrate (20); a second conductive layer (32) provided on the second substrate surface (22); a plurality of via conductors (400) provided in the substrate (20) and electrically connecting the first conductive layer (31), the one or more intermediate conductive layers (33, 34, 35), and the second conductive layer (32); and a light emitting component (40, 500, 510) mounted on the first substrate surface (21) and electrically connected to the first conductive layer (31). a drive circuit (70) mounted on the first substrate surface (21), electrically connected to the first conductive layer (31), and configured to drive the light emitting component (40, 500, 510); the light emitting component (40, 500, 510) comprises: a base (42) including a first surface (42A) and a second surface (42B) opposite to the first surface (42A); a semiconductor light emitting element (50) mounted on the first surface (42A) and electrically connected to the base (42); a first lead (43) connected to the second surface (42B); and a second lead (44) passing through the base (42) and electrically insulated from the base (42); the light emitting component (40, 500, 510) is electrically connected to the first conductive layer (31) by the first lead (43) and the second lead (44), The light emitting device, wherein the semiconductor light emitting element (50) is bonded to the first surface (42A) of the base (42).

[0179] (Appendix 2) A light-emitting device as described in Appendix 1, wherein a first distance (L11) between an intermediate conductive layer (34) of the one or more intermediate conductive layers that is closest to the first conductive layer (31) and the first conductive layer (31) is shorter than a second distance (L31) between the first substrate surface (21) and the base (42).

[0180] (Supplementary Note 3) The light emitting device according to Supplementary Note 2, wherein the first distance (L11) is greater than 0 mm and equal to or less than 0.3 mm, and the second distance (L31) is greater than 0 mm and equal to or less than 2 mm.

[0181] (Supplementary Note 4) The light-emitting device described in Supplementary Note 2 or Supplementary Note 3, wherein the substrate (20) includes a first insulating layer (27A) including the first substrate surface (21), a second insulating layer (27B) including the second substrate surface (22), and a third insulating layer (27C) arranged between the first insulating layer (27A) and the second insulating layer (27B); the plurality of intermediate conductive layers (33) include a first intermediate conductive layer (34) embedded between the first insulating layer (27A) and the third insulating layer (27C), and a second intermediate conductive layer (35) embedded between the third insulating layer (27C) and the second insulating layer (27B); and the first distance is the distance between the first conductive layer (31) and the first intermediate conductive layer (34).

[0182] (Supplementary Note 5) The light emitting device according to Supplementary Note 4, wherein the first insulating layer (27A) is thinner than the third insulating layer (27C).

[0183] (Supplementary Note 6) The light emitting device according to Supplementary Note 4, wherein the thickness of the first insulating layer (27A) is equal to or less than half the thickness of the third insulating layer (27C).

[0184] (Supplementary Note 7) The light emitting device according to any one of Supplementary Notes 4 to 6, wherein the second insulating layer (27B) has a thickness equal to the thickness of the first insulating layer (27A).

[0185] (Supplementary Note 8) The light-emitting device according to any one of Supplementary Note 1 to Supplementary Note 7, wherein the semiconductor light-emitting element (50) includes: a submount (55) electrically connected to the base (42); and a light-emitting chip (51) disposed on the submount.

[0186] (Appendix 9) The light-emitting chip (51) includes a first electrode (52A) and a second electrode (52B) provided on the opposite side of the first electrode (52A), the first electrode (52A) is electrically connected to the second lead (44), and the second electrode (52B) is electrically connected to the base (42) by the submount. This is the light-emitting device described in Appendix 8.

[0187] (Supplementary Note 10) The light emitting device according to Supplementary Note 9, wherein the light emitting chip (51) is a surface emitting laser element configured to emit light in a direction intersecting the first surface (42A) of the base (42).

[0188] (Supplementary Note 11) The light emitting device according to Supplementary Note 10, wherein the light emitting chip is a photonic crystal surface emitting laser element or a vertical cavity surface emitting laser element.

[0189] (Appendix 12) The light emitting device according to any one of Appendices 9 to 11, wherein the base (42) includes a mounting recess (551) on the first surface (42A) that is recessed toward the second surface (42B), and the semiconductor light emitting element (50) is connected to a bottom surface (552) of the mounting recess (551).

[0190] (Appendix 13) The light emitting device according to Appendix 9, wherein the light emitting chip (551) is an edge-emitting laser element, and the light emitting component (500) includes a reflecting element (520) provided on the first surface (42A) of the base (42) and configured to reflect light emitted from the edge-emitting laser element.

[0191] (Supplementary Note 14) The light emitting device according to Supplementary Note 13, wherein the reflective element (520) is a light reflective mirror or a diffraction grating.

[0192] (Appendix 15) The light-emitting device described in Appendix 13 or Appendix 14, wherein the base (42) includes a mounting recess (551) on the first surface (42A) that is recessed toward the second surface (42B), the semiconductor light-emitting element (50) is mounted on a bottom surface (552) of the mounting recess (551), and the reflective element (520) is mounted on the first surface (42A).

[0193] (Appendix 16) The light-emitting device according to appendix 13 or appendix 14, wherein the base (42) includes a mounting recess (551) on the first surface (42A) that is recessed toward the second surface (42B), and the semiconductor light-emitting element (50) and the reflective element (520) are mounted on a bottom surface of the mounting recess (551).

[0194] (Appendix 17) The light-emitting device described in any one of Appendix 12, Appendix 15, and Appendix 16, wherein the mounting recess (551) is configured so that the height from the first surface (42A) to the tip of the second lead (44) is equal to the height from the first surface (42A) to the first electrode.

[0195] (Appendix 18) A light-emitting device described in any one of Appendices 9 to 16, wherein the height from the first surface (42A) of the base (42) to the tip of the second lead (44) is lower than the height from the first surface (42A) of the base (42) to the first electrode of the light-emitting chip.

[0196] (Appendix 19) A light-emitting device described in any one of Appendices 9 to 16, wherein the height from the first surface (42A) of the base (42) to the tip of the second lead (44) is equal to the height from the first surface (42A) of the base (42) to the first electrode of the light-emitting chip.

[0197] (Appendix 20) A light-emitting device described in any one of Appendices 9 to 16, wherein the height from the first surface (42A) of the base (42) to the tip of the second lead (44) is greater than the height from the first surface (42A) of the base (42) to the first electrode of the light-emitting chip.

[0198] (Supplementary Note 21) The light emitting device according to any one of Supplementary Notes 1 to 20, further comprising a wire (46) that electrically connects the second lead (44) and the semiconductor light emitting element (50).

[0199] (Supplementary Note 22) The light emitting device according to Supplementary Note 21, wherein the second lead (44) protrudes from the first surface (42A) of the base (42), and the wire (46) is connected to a tip surface of the second lead (44).

[0200] (Supplementary Note 23) The light emitting device according to Supplementary Note 21 or Supplementary Note 22, wherein the light emitting component (40, 500) includes a plurality of the second leads (44) and a plurality of the wires (46) that electrically connect the semiconductor light emitting element (50) and the plurality of the second leads (44).

[0201] (Appendix 24) The light emitting device described in any one of Appendices 1 to 23, wherein the light emitting component (40, 500) includes a cover (47) fixed to the first surface (42A) of the base (42) and covering the semiconductor light emitting element (50), and the cover (47) includes a window portion (47D) configured to allow light emitted from the semiconductor light emitting element (50) to pass through.

[0202] (Supplementary Note 25) The light emitting device according to Supplementary Note 24, wherein the light emitting component (40, 500) includes a window member (48) that is translucent to light emitted from the semiconductor light emitting element (50) and closes the window portion (47D).

[0203] (Appendix 26) The light-emitting device described in any one of Appendices 1 to 25, wherein the drive circuit (70) includes a switching element (71) and a capacitor (72), and in a planar view seen from the thickness direction of the substrate (20), the light-emitting component, the switching element (71), and the capacitor (72) are aligned in a first direction, and the switching element (71) and the capacitor (72) are arranged so as to sandwich the light-emitting component.

[0204] (Appendix 27) The light-emitting device described in Appendix 26, wherein the plurality of via conductors include a plurality of first via conductors (401) and a plurality of second via conductors (402), the plurality of first via conductors (401) are arranged on the opposite side of the capacitor (72) from the light-emitting component (40), and the plurality of second via conductors (402) are arranged on the opposite side of the switching element (71) from the light-emitting component (40).

[0205] (Appendix 28) The light-emitting device described in any one of Appendices 1 to 25, wherein the drive circuit (70) includes a switching element (71) and a capacitor (72), and in a planar view seen from the thickness direction of the substrate (20), the light-emitting component, the switching element (71), and the capacitor (72) are aligned in a first direction, and the light-emitting component and the switching element (71) are arranged so as to sandwich the capacitor (72).

[0206] (Appendix 29) The light-emitting device described in Appendix 28, wherein the plurality of via conductors include a plurality of first via conductors (401) and a plurality of second via conductors (402), the plurality of first via conductors (401) are arranged on the opposite side of the switching element (71) from the capacitor (72), and the plurality of second via conductors (402) are arranged on the opposite side of the light-emitting component from the capacitor (72).

[0207] (Supplementary Note 30) The light emitting device according to Supplementary Note 27 or Supplementary Note 29, wherein the plurality of first via conductors (401) form a via row aligned along a second direction intersecting the first direction.

[0208] (Supplementary Note 31) The light emitting device according to Supplementary Note 27 or Supplementary Note 29, wherein the plurality of second via conductors (402) form a via row aligned along a second direction intersecting the first direction.

[0209] (Supplementary Note 32) The light emitting device according to any one of Supplementary Notes 26 to 31, wherein the drive circuit (70) further includes a gate driver that drives the switching element (71).

[0210] (Supplementary Note 33) The light emitting device according to Supplementary Note 32, wherein the gate driver is disposed apart from the switching element (71) in a second direction intersecting the first direction with respect to the switching element (71).

[0211] (Supplementary Note 34) The light emitting device according to any one of Supplementary Notes 26 to 33, wherein the drive circuit (70) further includes a protection diode connected in anti-parallel to the light emitting component.

[0212] (Supplementary Note 35) The light emitting device according to Supplementary Note 34, wherein the protection diode is disposed at a distance from the light emitting component in a second direction intersecting the first direction with respect to the light emitting component.

[0213] (Supplementary Note 36) The light emitting device according to any one of Supplementary Notes 1 to 35, wherein the substrate (20) is made of any one of glass epoxy resin, ceramic, and silicon.

[0214] (Supplementary Note 37) The light emitting device includes: an insulating substrate (20) including a first substrate surface (21) and a second substrate surface (22) opposite to the first substrate surface (21); a first conductive layer (31) provided on the first substrate surface (21); one or more intermediate conductive layers embedded in the substrate (20); a second conductive layer (32) provided on the second substrate surface (22); a plurality of via conductors provided in the substrate (20) and electrically connecting the first conductive layer (31), the one or more intermediate conductive layers, and the second conductive layer (32); a light emitting component mounted on the first substrate surface (21) and electrically connected to the first conductive layer (31); and a drive circuit (70) mounted on the first substrate surface (21), electrically connected to the first conductive layer (31), and for driving the light emitting component, wherein the light emitting component is a heat sink including a mounting surface erected from the first surface (42A) of the base (42) and intersecting the first surface (42A); a semiconductor light-emitting element (50) that is an edge-emitting laser element and bonded to the mounting surface; a first lead (43) connected to the second surface (42B); and a second lead (44) that penetrates the base (42) and is electrically insulated from the base (42), wherein the light-emitting component is electrically connected to the first conductive layer (31) by the first lead (43) and the second lead (44).

[0215] (Supplementary Note 38) The light emitting device includes: an insulating substrate (20) including a first substrate surface (21) and a second substrate surface (22) opposite to the first substrate surface (21); a first conductive layer (31) provided on the first substrate surface (21); one or more intermediate conductive layers embedded in the substrate (20); a second conductive layer (32) provided on the second substrate surface (22); a plurality of via conductors provided in the substrate (20) and electrically connecting the first conductive layer (31), the one or more intermediate conductive layers, and the second conductive layer (32); a light emitting component mounted on the first substrate surface (21) and electrically connected to the first conductive layer (31); and a drive circuit (70) mounted on the first substrate surface (21), electrically connected to the first conductive layer (31), and for driving the light emitting component, wherein the light emitting component is a semiconductor light-emitting element (50) mounted on the first surface (42A) and electrically connected to the base (42); a first lead (43) connected to the second surface (42B); and a second lead (44) passing through the base (42) and electrically insulated from the base (42), wherein the light-emitting component is electrically connected to the first conductive layer (31) by the first lead (43) and the second lead (44), and a first distance between the first conductive layer (31) and an intermediate conductive layer of the one or more intermediate conductive layers that is closest to the first conductive layer (31) is shorter than a second distance between the first substrate surface (21) and the base (42).

[0216] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims.

[0217] 10 Light emitting device 20 Substrate 21 First substrate surface 22 Second substrate surface 23 First side surface 24 Second side surface 25 Third side surface 26 Fourth side surface 27A to 27C First to third insulating layers 28 Through hole 31 First conductive layer 32 Second conductive layer 33 Intermediate conductive layer 34 First intermediate conductive layer 35 Second intermediate conductive layer 37A First resist layer 37B Second resist layer 40 Light emitting component 41 Stem 42 Base 42A First surface 42B Second surface 42C Through hole 43 First lead 43A Connection portion 43B Connection surface 43C Terminal portion 44 Second lead 44A Connection portion 44B Tip surface 44C Terminal portion 44D Connection portion 44E Connection surface 45 Insulating material 46 Wire 47 Cover 47D Window portion 48 Window member 50 Semiconductor light emitting element 51 Light emitting chip 51A First element surface 51B Second element surface 52A First electrode 52B Second electrode 53 Light emitting region 55 Submount 56 Surface bonding portion 70 Drive circuit 71 Switching element 71A First element surface 71B Second element surface 71D Drain electrode 71G Gate electrode 71S Source electrode 72 Capacitor 72A First electrode 72B Second electrode 73 Protection diode 73A Anode electrode 73B Cathode electrode 74 Current limiting resistor 75 Capacitor 76 Gate driver 101 to 108 First to eighth patterned conductors 110 Ninth patterned conductor 201 to 207 First to seventh patterned conductors 301 to 306 First to sixth intermediate conductors 400 Via conductors 401 to 404 First to fourth via conductors 500 Light emitting component 510 Semiconductor light emitting element 511 Light emitting chip 514 First electrode 515 Second electrode 516 End surface 517 Submount 520 Reflecting element 550 Light emitting component 551 Mounting recess 552 Bottom surface 600 Light emitting component 601 Stem 602 Heat sink 700, 710, 720 Switching element 800 Light emitting system 801 DC power supply 802 Control power supply 803 Pulse generator CP1, CP2 Current path L11, L12, L13 Distance L21,L22 Height L31 Distance L41 Depth L42 Height

Claims

1. An insulating substrate including a first substrate surface and a second substrate surface opposite the first substrate surface; a first conductive layer provided on the first substrate surface; one or more intermediate conductive layers embedded in the substrate; a second conductive layer provided on the second substrate surface; a plurality of via conductors provided in the substrate and electrically connecting the first conductive layer, the one or more intermediate conductive layers, and the second conductive layer; a light emitting component mounted on the first substrate surface and electrically connected to the first conductive layer; and a drive circuit mounted on the first substrate surface and electrically connected to the first conductive layer, for driving the light emitting component, wherein the light emitting component includes: a base including a first surface and a second surface opposite the first surface; a semiconductor light emitting element mounted on the first surface and electrically connected to the base; a first lead connected to the second surface; and a second lead penetrating the base and electrically insulated from the base, wherein the light emitting component is electrically connected to the first conductive layer by the first lead and the second lead, The semiconductor light emitting element is bonded to the first surface of the base.

2. The light-emitting device of claim 1, wherein a first distance between the first conductive layer and an intermediate conductive layer among the one or more intermediate conductive layers that is closest to the first conductive layer is shorter than a second distance between the first substrate surface and the base.

3. The light emitting device according to claim 2, wherein the first distance is greater than 0 mm and equal to or less than 0.3 mm, and the second distance is greater than 0 mm and equal to or less than 2 mm.

4. The light-emitting device described in claim 2 or 3, wherein the substrate includes a first insulating layer including the first substrate surface, a second insulating layer including the second substrate surface, and a third insulating layer disposed between the first insulating layer and the second insulating layer; the plurality of intermediate conductive layers include a first intermediate conductive layer embedded between the first insulating layer and the third insulating layer, and a second intermediate conductive layer embedded between the third insulating layer and the second insulating layer; and the first distance is the distance between the first conductive layer and the first intermediate conductive layer.

5. The light emitting device according to claim 4, wherein the first insulating layer is thinner than the third insulating layer.

6. The light emitting device according to claim 4, wherein the thickness of the first insulating layer is equal to or less than half the thickness of the third insulating layer.

7. The light emitting device according to any one of claims 4 to 6, wherein the thickness of the second insulating layer is equal to the thickness of the first insulating layer.

8. The light emitting device according to any one of claims 1 to 7, wherein the semiconductor light emitting element includes: a submount electrically connected to the base; and a light emitting chip disposed on the submount.

9. The light-emitting device according to claim 8, wherein the light-emitting chip includes a first electrode and a second electrode provided on the opposite side of the first electrode, the first electrode being electrically connected to the second lead, and the second electrode being electrically connected to the base by the submount.

10. The light emitting device according to claim 9, wherein the light emitting chip is a surface emitting laser element configured to emit light in a direction intersecting the first surface of the base.

11. The light emitting device according to claim 10, wherein the light emitting chip is a photonic crystal surface emitting laser element or a vertical cavity surface emitting laser element.

12. The light emitting device according to any one of claims 9 to 11, wherein the base includes a mounting recess on the first surface that is recessed toward the second surface, and the semiconductor light emitting element is connected to a bottom surface of the mounting recess.

13. The light emitting device according to claim 9, wherein the light emitting chip is an edge-emitting laser element, and the light emitting component includes a reflecting element provided on the first surface of the base and configured to reflect light emitted from the edge-emitting laser element.

14. The light emitting device according to claim 13, wherein the reflective element is a light reflective mirror or a diffraction grating.

15. A light emitting device according to claim 13 or 14, wherein the base includes a mounting recess on the first surface that is recessed toward the second surface, the semiconductor light emitting element is mounted on the bottom surface of the mounting recess, and the reflective element is mounted on the first surface.

16. The light emitting device according to claim 13 or 14, wherein the base includes a mounting recess on the first surface that is recessed toward the second surface, and the semiconductor light emitting element and the reflecting element are mounted on a bottom surface of the mounting recess.

17. The light emitting device according to any one of claims 9 to 16, wherein the height from the first surface of the base to the tip of the second lead is lower than the height from the first surface of the base to the first electrode of the light emitting chip.

18. The light emitting device according to any one of claims 1 to 17, further comprising a wire electrically connecting the second lead and the semiconductor light emitting element.

19. The light emitting device according to claim 18, wherein the second lead protrudes from the first surface of the base, and the wire is connected to a tip surface of the second lead.

20. The light emitting device according to claim 18 or 19, wherein the light emitting component includes a plurality of the second leads and a plurality of the wires that electrically connect the semiconductor light emitting element and the plurality of the second leads.

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