System and method for surface fabrication

Abstract

A surface fabrication system including an ion generating device comprising an ion funnel, an ion guide, and a focusing lens, and a soft-landing chamber comprising a Wien filter. The Wien filter includes a first electric field source, a second electric field source, and a magnetic field source, providing crossed and parallel electric and magnetic fields which may be adjusted to provide the simultaneous mass-selected deposition of ions generated from a sample with a plurality of m / z species onto surfaces with defined patterns from high-flux ion beams. The ions may be deposited into one-dimensional and / or two-dimensional patterns.

Description

[0001] SYSTEM AND METHOD FOR SURFACE FABRICATION

[0002] RELATED APPLICATIONS

[0003] This application claims the benefit of U.S. Provisional Application No. 63 / 654,372, filed May 31 , 2024, the entire disclosure of which is incorporated herein by reference.

[0004] GOVERNMENT RIGHTS

[0005] This invention was made with government support under FA9550-23-1-0137 awarded by the Air Force Office of Scientific Research. The government has certain rights in the invention.

[0006] TECHNICAL FIELD

[0007] The disclosure generally relates to a surface fabrication system, and methods of use and manufacture thereof.

[0008] BACKGROUND

[0009] This section provides background information related to the present disclosure which is not necessarily prior art.

[0010] Ion soft-landing is a mass spectrometry technique that preserves the structural integrity of polyatomic ions upon surface deposition at hyperthermal kinetic energies (<100 eV). This method allows for deposition of purified species that cannot be isolated in solution which enables the study of surface-ion chemistry without interference from other species, solvent effects, or counterions. Its applications span various fields, including analysis of biomolecular structure and activity on surfaces, understanding of the electronic properties of metal and non-metal clusters, fundamental studies of catalytic processes, development of efficient electrochemical interfaces for energy production and storage devices, and utilization of reactive fragment ions as unique building blocks for materials synthesis and modification. Additionally, ion soft-landing is utilized as a preparatory technique to produce precisely structured surfaces, including hydrophobic gradients, self-organizing ionic layers, and the deposition of proteins on grids for structural biology analysis via electron microscopy.

[0011] Known methods of surface fabrication utilizing ion soft-landing techniques in mass spectrometry applications rely on quadrupole mass filters for ion selection, which suffer limitations in achieving multi-mass-to-charge (m / z) ratio surface depositions. This limitation impedes the fabrication of intricate surfaces for biological and technological applications.

[0012] More specifically, known ion soft-landing techniques utilize a single m / z. filter. Although the deposition of multiple m z ions onto a substrate is feasible, it is performed in sequence, which significantly increases the deposition time. Patterning of mass-selected ions on surfaces has been reported and is typically performed by placing a mask in front of the deposition target, which blocks part of the ion beam from reaching the target. This process results in ion loss and is still limited to one m / z at a time. Ion “line-writing” and 2-D patterning with mass-selected ion beams is not believed to have been reported so far.

[0013] For preparative techniques, ion soft-landing benefits from high-flux mass-selected ion beams which reduces the time scale for surface fabrication. Ion soft-landing coupled with electrospray ionization (ESI) sources has previously reported a mass-selected 1 pg per day deposition rate for polyoxometalate ions. This rate was improved to 10 pg per day by multiplexing ESI inlets. While improving ion beam currents from the source of ion soft-landing systems is beneficial for preparative techniques, it is also crucial to employ mass analyzers compatible with these high- flux continuous ion beams. Quadrupoles are widely used due to their compactness and cost-effectiveness, but they only allow for single mass-to-charge (m / z) selection, which are not ideal for surface fabrications involving multiple m / z species. Sector instruments, on the other hand, disperse multicomponent ion beams spatially, enabling simultaneous ion deposition. However, they require large magnets, higher vacuum conditions, and have limited ion transmission from use of pre- and post-filter apertures. A rotating electric field mass dispersive device, termed a rotating wall mass analyzer (RWMA), was previously developed that enabled simultaneous deposition of multiple m / z species from a multicomponent ion beam. This device deposits ions into concentric rings onto a surface where the ring diameter is inversely related to the ion’s m / z. The maximum demonstrated resolution (R = m / Am) of the device was R = 26, which enabled simultaneous mass resolved deposition of the +7 to +13 charge states of ubiquitin. Although the RWMA offers simultaneous deposition of multiple m / z species, projection of ring shapes on surfaces limits area coverage which means ions are not deposited onto concentrated locations.

[0014] Few techniques allow for the simultaneous deposition of multiple m / z species. Known techniques that do enable high throughput deposition of multiple m / z species onto surfaces are not capable for the fabrication of surfaces with defined patterns from high-flux ion beams. With increasing demands for efficient charge storage and energy transfer devices, it is anticipated that ion line-writing and surface patterning with mass-selected ion beams will be used for fabricating critical components of these devices.

[0015] Accordingly, there is a continuing need for a high throughout surface fabrication system that enables the simultaneous deposition of ions generated from a mixture with a plurality of m / z species onto surfaces with defined patterns from high-flux ion beams. Desirably, the surface fabrication system may deposit the ions into one-dimensional and / or two-dimensional patterns. SUMMARY

[0016] In concordance with the instant disclosure, a high-throughput surface fabrication system that enables the simultaneous deposition of ions generated from a mixture with a plurality of m z species onto surfaces with defined patterns from high-flux ion beams, has surprisingly been discovered. Desirably, the surface fabrication system may deposit the ions into one-dimensional and / or two-dimensional patterns.

[0017] In one aspect, the present disclosure provides a fabrication system configured to deposit ions on a surface, the fabrication system comprising: an ion beam generator; a soft-landing chamber coupled to the ion beam generator; and a Wien filter disposed within the soft-landing chamber, wherein the Wien filter is coupled to a first electric field source, a second electric field source, and a magnetic field source.

[0018] In another aspect, the present disclosure provides a fabrication system configured to deposit ions on a surface, the fabrication system comprising: an ion beam generating device; a soft-landing chamber coupled to the ion beam generating device; and a Wien filter coupled to the soft-landing chamber, wherein the Wien filter includes an electric field source and a magnetic field source.

[0019] In yet another aspect, the present disclosure provides a method of depositing ions on a surface, the method comprising the steps of: ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through an ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through a Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter, wherein the first electric field is substantially orthogonal to the magnetic field, and the second electric field is substantially parallel to the magnetic field; and depositing the ions onto a surface.

[0020] In another aspect, the present disclosure provides a method of using a fabrication system, the method comprising the steps of: providing a fabrication system according to the present disclosure; ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through the ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through the Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter, wherein the first electric field is orthogonal to the magnetic field, and the second electric field is parallel to the magnetic field; and depositing the ions onto a surface.

[0021] In yet another aspect, the present disclosure provides a method of using a fabrication system, the method comprising the steps of: providing a fabrication system having an ion funnel, an ion guide, a soft-landing chamber, a focusing lens, and a Wien filter, the ion funnel has an inlet and an outlet, the ion guide is coupled to the outlet of the ion funnel, the soft-landing chamber is coupled to the ion guide, the focusing lens is coupled to the soft-landing chamber, and the Wien filter is coupled to the soft-landing chamber, wherein the Wien filter includes an electric field source and a magnetic field source; producing ions in an electrospray ionization source; transferring the ions into the ion funnel; passing the ions through the ion guide; transferring the ions into the soft-landing chamber; focusing the ions with the focusing lens; passing the ions through the Wien filter; and depositing the ions onto a surface.

[0022] The surface fabrication system of the present disclosure includes a Wien filter employing crossed electric and magnetic fields (ExB), to enable discrimination based on ion velocity. By dynamically controlling a secondary electric field parallel to the magnetic field, the system facilitates the deposition of mass-resolved ions into one-dimensional arrays, termed ion "linewriting. " The length and distribution of each ion array may be finely tunable through adjustments in the dynamic field's amplitude, frequency, and / or waveform type. Moreover, the present disclosure may offer the capability of mass-resolved two-dimensional surface patterning by dynamic control of both electric fields. This advancement holds significant promise for the streamlined fabrication of precisely engineered surfaces, micro-electrochemical systems, sensor arrays, and / or diverse technological manufacturing applications.

[0023] Further areas of applicability will become apparent from the description provided herein. The description and specific examples in this summary are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The drawings described herein are for illustrative purposes only of selected embodiments and not all possible implementations and are not intended to limit the scope of the present disclosure.

[0025] FIG. 1 A is a schematic diagram of a Wien filter included with a surface fabrication system, further depicting the Wien filter employing crossed electric and magnetic fields, according to one embodiment of the present disclosure;

[0026] FIG. IB is a schematic diagram of an ion (charge = +q, velocity = v) trajectory through a Wien filter. The top and bottom electrodes provide an electric field (E) in -y-direction, and magnetic plates (not drawn) induce a magnetic field (B) in +x-direction. A linear trajectory is observed when v = E / B. Lateral (y-axis) deflection occurs when v E / B;

[0027] FIG. 2A is a schematic diagram of a surface fabrication system, further depicting a Wien filter being used with a soft-landing chamber, according to one embodiment of the present disclosure;

[0028] FIG. 2B is a schematic diagram of a Wien filter according to one embodiment of the present disclosure showing dimensions and field directions. Lines help visualize mass dispersed trajectories of ions through the filter before being measured by the vertically mounted lonCCD detector;

[0029] FIG. 3 is a perspective view of simulated trajectories of the dye mixture demonstrating y- axis deflection induced by a Wien filter used for parallel deposition, further depicting the Wien filter separating the ions using crossed electric (“E” / “EDC”) and magnetic (“B”) fields, according to one embodiment of the present disclosure;

[0030] FIG. 4 is an lonCCD™ image of simultaneous parallel deposition of the soft-landed dye mixture of three organic dye species from the Wien filter according to one embodiment of the present disclosure;

[0031] FIG. 5A is a perspective view of simulated trajectories of the dye mixture through a Wien filter used for line-writing applications demonstrating x-axis “spraying” of ions while maintaining y-axis lateral mass separation, further depicting where an alternating current (AC amplitude and frequency correspond to 7 Vp-p / 100Hz) is applied to conductive coatings of magnetic plates, according to one embodiment of the present disclosure;

[0032] FIG. 5B is a perspective view of simulated line distributions of organic dye mixture from a Wien filter with applied AC amplitude of 7Vp.pat 100Hz, where the waveform type was sinusoidal, triangular, and square; FIG. 6 is an lonCCD™ image of 1-D “line- writing” of the organic dye mixture from a sinusoidal waveform applied to the Wien filter with an AC amplitude of 7Vp-p and AC frequency of 100Hz with agreeable simulated data, according to one embodiment of the present disclosure;

[0033] FIG. 7 is an lonCCD™ image of 1-D “line- writing” of the organic dye mixture from a sinusoidal waveform applied to the Wien filter with an AC amplitude of 3.5Vp-p and AC frequency of 100Hz, according to one embodiment of the present disclosure;

[0034] FIG. 8 is an lonCCD™ image of 1-D “line- writing” of the organic dye mixture from a sinusoidal waveform applied to the Wien filter with an AC amplitude of 7 Vp-p and AC frequency of 50kHz, according to one embodiment of the present disclosure;

[0035] FIG. 9A is a schematic diagram of a Wien filter according to one embodiment of the present disclosure showing an applied AC amplitude of 7Vp.pat 100Hz, where the waveform type is triangular or square;

[0036] FIG. 9B is an lonCCD™ image of 1-D “line-writing” of the organic dye mixture from a triangular waveform (AC amplitude of 7 Vp pat 100 Hz) applied to magnet plates of the Wien filter that generates a uniform distribution of ions with agreeable simulated data, according to one embodiment of the present disclosure;

[0037] FIG. 9C is an lonCCD™ image of 1-D “line-writing” of the organic dye mixture from a square waveform (AC amplitude of 7 Vp.pat 100 Hz) applied to magnet plates of the Wien filter that concentrates ions of each m / z into two small deposition areas with agreeable simulated data, according to one embodiment of the present disclosure;

[0038] FIG. 10 is a simulated surface ion patterning process resulting from dynamic control of both electric fields to provide the predetermined pattern, according to one embodiment of the present disclosure;

[0039] FIG. 11 A is a graph of the voltage ramp profile used to generate FIG. 1 IB; and FIG. 1 IB is a simulated 2-D surface pattern of mass-resolved B12F122' and B^Bm2;

[0040] FIG. 12A is a graph of the voltage ramp profile showing the voltage difference across the electrode plates (top) and conductive coatings of the magnetic plates (bottom) of the user-defined waveform used to generate the desired 2-D pattern (insert); and FIG. 12B is the lonCCD image or a mixture of B12F122" (m / z 179) and Bi2Bri22" m / z 545) generated by repeating the waveform of FIG. 12A; and

[0041] FIG. 13 is a flow chart of a method for using a surface fabrication system, according to one embodiment of the present disclosure. DETAILED DESCRIPTION

[0042] The following description of technology is merely exemplary in nature of the subject matter, manufacture, and use of one or more inventions, and is not intended to limit the scope, application, or uses of any specific invention claimed in this application or in such other applications as may be filed claiming priority to this application, or patents issuing therefrom. Regarding methods disclosed, the order of the steps presented is exemplary in nature, and thus, the order of the steps can be different in various embodiments, including where certain steps can be simultaneously performed. “A’- and “an’- as used herein indicate “at least one” of the item is present; a plurality of such items may be present, when possible. Except where otherwise expressly indicated, all numerical quantities in this description are to be understood as modified by the word “about” and all geometric and spatial descriptors are to be understood as modified by the word “substantially” in describing the broadest scope of the technology. “About” when applied to numerical values indicates that the calculation or the measurement allows some slight imprecision in the value (with some approach to exactness in the value; approximately or reasonably close to the value; nearly). If, for some reason, the imprecision provided by “about” and / or “substantially” is not otherwise understood in the art with this ordinary meaning, then “about” and / or “substantially” as used herein indicates at least variations that may arise from ordinary methods of measuring or using such parameters.

[0043] Although the open-ended term “comprising,” as a synonym of non-restrictive terms such as including, containing, or having, is used herein to describe and claim embodiments of the present technology, embodiments may alternatively be described using more limiting terms such as “consisting of’ or “consisting essentially of.” Thus, for any given embodiment reciting materials, components, or process steps, the present technology also specifically includes embodiments consisting of, or consisting essentially of, such materials, components, or process steps excluding additional materials, components or processes (for consisting of) and excluding additional materials, components or processes affecting the significant properties of the embodiment (for consisting essentially of), even though such additional materials, components or processes are not explicitly recited in this application. For example, recitation of a composition or process reciting elements A, B and C specifically envisions embodiments consisting of, and consisting essentially of, A, B and C, excluding an element D that may be recited in the art, even though element D is not explicitly described as being excluded herein.

[0044] As referred to herein, disclosures of ranges are, unless specified otherwise, inclusive of endpoints and include all distinct values and further divided ranges within the entire range. Thus, for example, a range of “from A to B” or “from about A to about B” is inclusive of A and of B. Disclosure of values and ranges of values for specific parameters (such as amounts, weight percentages, etc.) are not exclusive of other values and ranges of values useful herein. It is envisioned that two or more specific exemplified values for a given parameter may define endpoints for a range of values that may be claimed for the parameter. For example, if Parameter X is exemplified herein to have value A and also exemplified to have value Z, it is envisioned that Parameter X may have a range of values from about A to about Z. Similarly, it is envisioned that disclosure of two or more ranges of values for a parameter (whether such ranges are nested, overlapping, or distinct) subsume all possible combination of ranges for the value that might be claimed using endpoints of the disclosed ranges. For example, if Parameter X is exemplified herein to have values in the range of 1-10, or 2-9, or 3-8, it is also envisioned that Parameter X may have other ranges of values including 1-9, 1-8, 1-3, 1-2, 2-10, 2-8, 2-3, 3-10, 3-9, and so on.

[0045] When an element or layer is referred to as being “on,” “engaged to,” “connected to,” or “coupled to” another element or layer, it may be directly on, engaged, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly engaged to,” “directly connected to” or “directly coupled to” another element or layer, there may be no intervening elements or layers present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0046] Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer, or section. Terms such as “first,” “second,” and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer, or section discussed below could be termed a second element, component, region, layer, or section without departing from the teachings of the example embodiments.

[0047] Spatially relative terms, such as “inner,” “outer,” “beneath,” “below,” “lower,” “above,” “upper,” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the FIG. is turned over, elements described as “below”, or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0048] The terms “downstream” and “upstream” may be used herein to refer to a relative location with respect to the flow of a sample through a system. For example, in a system where component A is coupled to component B, and a sample flows through component A then component B, it will be understood that component A is located / disposed upstream of component B, and component B is located / disposed downstream of component A.

[0049] An object of the present disclosure includes simultaneously depositing ions of different m / z values onto a surface. The object can be achieved through the use of a compact, low-cost, legacy mass analyzer, the Wien filter, to enable concentrated area deposition from a multicomponent ion beam. Comparative single m / z filters have failed to achieve high-throughput screening of mass-selected ions for specific properties.

[0050] As shown in FIG. 1A, the present disclosure provides a high throughput surface fabrication system which includes a Wien filter, otherwise known as a velocity selector, employing crossed electric and magnetic fields (ExB), to enable discrimination based on ion velocity. The term “high throughput” in the context of the present disclosure may be understood as enabling multiple m / z species to be spatially separated by the Wien filter, allowing simultaneous m / z deposition. This is in contrast to single m / z filters (e.g., quadrupole) which limit ion transmission. “High throughput” may also include where the Wien filter is compatible with continuous ion beams, meaning ions do not have to be pulsed as packets through the device or stored beforehand. More generally, “high throughput” may also be understood as providing a lossless ion surface fabrication system. In other words, ions are not lost or removed when transiting through the filter.

[0051] In a specific example, the surface fabrication system may include a plurality of electric fields (e.g., a first electric field and a second electric field) disposed on at least two axes (e.g., a first axis and a second axis). The plurality of electric fields may be imposed onto a magnetic field. The magnetic field may be disposed along a magnetic field axis (e.g., a third axis). The magnetic field axis may be disposed substantially parallel to at least one of the electric field axes. For instance, the surface fabrication system may include a first electric field disposed along a first electric field axis (e.g., a first axis), a second electric field disposed along a second electric field axis (e.g., a second axis), and the magnetic field disposed along the magnetic field axis (e.g., a third axis). The first electric field axis may be disposed substantially orthogonal to the second electric field axis. The magnetic field axis may be disposed substantially parallel with the second electric field axis.

[0052] The incident ion beam axis is disposed substantially orthogonal to both the first electric field axis and magnetic field axis. By dynamically controlling a secondary electric field parallel to the magnetic field, the system facilitates the deposition of mass-resolved ions into onedimensional arrays, termed ion "line- writing." The length and distribution of each ion array may be finely tunable through adjustments in the dynamic field's amplitude, frequency, and / or waveform type. Moreover, the present disclosure may offer the capability of mass-resolved two- dimensional surface patterning by dynamic control of both electric fields (e.g., the first electric field and the second electric field).

[0053] With increasing demands for efficient charge storage and energy transfer devices, it is anticipated that ion line- writing and surface patterning with mass-selected ion beams will be used for fabricating critical components of these devices. The fabrication system of the present disclosure may be implemented into ion soft-landing systems to provide high-throughput fabrication of well-defined surfaces with targeted area control for pattern design. In some embodiments, the fabrication system of the present disclosure may be integrated into vacuum systems that generate ion beams such as ion soft-landing instruments and mass spectrometers.

[0054] In some embodiments, the present disclosure relates to a fabrication system configured to deposit ions on a surface. In some embodiments, the fabrication system comprises an ion beam generator, a soft-landing chamber, and a Wien filter. In some embodiments, the Wien filter is coupled to an electric field source and a magnetic field source. In some embodiments, the Wien filter is coupled to a first electric field source, a second electric field source, and a magnetic field source.

[0055] In some embodiments, the ion beam generator is coupled to the soft-landing chamber. In some embodiments, the soft-landing chamber is coupled to the ion beam generator. In some embodiments, the soft-landing chamber is disposed adjacent to, but separate from the ion beam generator.

[0056] In some embodiments, the Wien filter is coupled to the soft-landing chamber. In some embodiments, the Wien filter is disposed within the soft-landing chamber. In some embodiments, the soft-landing chamber comprises the Wien filter. In some embodiments, the soft-landing chamber comprises the Wien filter and the surface.

[0057] In some embodiments, the fabrication system comprises an ion beam generator, a soft- landing chamber coupled to the ion beam generator, and a Wien filter disposed within the soft- landing chamber.

[0058] The fabrication system of the present disclosure may include an ion beam generating device (e.g., an ion beam generator) and a soft-landing chamber. In some embodiments, as shown in FIG. 2A, the ion beam generating device may include a focusing lens disposed adjacent to the Wien filter. The soft-landing chamber may be (directly) coupled to the ion beam generating device. In some embodiments, the ion beam generator comprises an ion funnel, an ion guide, and a focusing lens. In some embodiments, the ion beam generator comprises an ion funnel having an inlet and an outlet, an ion guide (directly) coupled to the outlet of the ion funnel, and a focusing lens (directly) coupled to the soft-landing chamber.

[0059] In some embodiments, the ion funnel is (directly) coupled to the ion guide. In some embodiments, the ion funnel may comprise at least one ion funnel (e.g., a tandem ion funnel, such as two ion funnels). In some embodiments, the ion funnel may comprise an inlet and an outlet. The outlet of the ion funnel, for example, may be (directly) coupled to the ion guide. In some embodiments, the ion guide is (directly) coupled to the focusing lens. In some embodiments, focusing lens is (directly) coupled to the soft-landing chamber. The ion beam generating device (e.g., an ion beam generator) may include a focusing lens, a bent ion guide (directly) coupled to the soft-landing chamber, and an ion funnel (directly) coupled to the bent ion guide.

[0060] In some embodiments, the ion guide is disposed between the ion funnel and the soft- landing chamber. In some embodiments, the focusing lens is disposed between the ion guide and the soft-landing chamber. In some embodiments, the ion guide and the focusing lens are disposed between the ion funnel and the soft-landing chamber. It is contemplated that the fabrication system of the present disclosure may be utilized with many different types of ion generating devices. One skilled in the art may select other suitable applications or components for the fabrication system, within the scope of the present disclosure.

[0061] In some embodiments, the Wien filter is coupled to (or comprises) a magnetic field source. In some embodiments, the Wien filter comprises a transverse magnet set. In some embodiments, the magnetic field source comprises a transverse magnet set configured to generate a magnetic field. In some embodiments, the magnetic field source is disposed on a third axis. The third axis, for example, may be disposed substantially parallel with the second axis and / or substantially orthogonal to the first axis. In some embodiments, the magnet set comprises a permanent magnet (e.g., a NdFeB magnet). In some embodiments, the magnet set does not comprise an electromagnet. The use of permanent magnets in the fabrication system according to the present disclosure may provide a cost benefit over comparative electromagnets.

[0062] In some embodiments, the magnet set (e.g., two opposing permanent magnets) comprises a conductive coating (e.g., a nickel coating). In some embodiments, the second electrode set comprises the conductive coating.

[0063] The Wien filter of the fabrication system may be provided in various ways. For instance, provided as a non-limiting example, the Wien filter may include two opposite pole facing magnets (e.g., permanent magnets, such as neodymium (NdFeB) magnets) that provide around a 0.1T magnetic field strength. Two opposing electrodes (e.g., a first electrode set) may provide a crossed electric field where their voltage difference can vary between 0-50V.

[0064] Tn some embodiments, the Wien filter is coupled to (or comprises) a first electric field source. In some embodiments, the Wien filter comprises a transverse first electrode set. The first electrode set, for example, may comprise a stainless-steel electrode set. In some embodiments, the first electric field source comprises a first signal source coupled to a transverse first electrode set. In some embodiments, the first electric field source is configured to generate a first electric field. In some embodiments, the first electric field is substantially orthogonal to the magnetic field and / or the second electric field. In some embodiments, the first electric field source, including the first signal source and the first electrode set, is disposed along a first axis. The first axis, for example, may be disposed substantially orthogonal to the second axis and / or the third axis.

[0065] In some embodiments, the first electric field is a static electric field or a dynamic electric field. A static electric field, for example, includes a constant signal (e.g., constant voltage). A static electric field may include a direct current. A dynamic electric field, for example, includes a variable signal (e.g., a variable voltage), such as a signal having a waveform. A dynamic electric field may include an alternating current.

[0066] In some embodiments, the first electrode set comprises two opposing electrodes (e.g., a top electrode and a bottom electrode). The first electric field source may provide an electric field where the voltage difference of the electrode set can vary between 0 to about 100V, such as about OV to about 50V. For example, the voltage difference may be about 0 to about 100V, about 0V to about 75V, about 0V to about 50V, about IVO to about 100V, about 10V to about 75V, or about 10V to about 50V; or the voltage difference may vary between about 0V to about 100V, about 0V to about 75V, about 0V to about 50V, about 10V to about 100V, about 10V to about 75V, or about 10V to about 50V.

[0067] In some embodiments, the first electric field is a static electric field, and the first signal source is configured to provide a constant signal (e.g., a constant voltage) to the first electrode set. In some embodiments, the first signal source is configured to provide the constant signal (e.g., a constant voltage) to one of the opposing electrodes (e.g., the top electrode) and the other opposing electrode (e.g., the bottom electrode) is grounded. In some embodiments, the first signal source is configured to provide the constant signal (e.g., a constant voltage) to the first electrode set to offset the trajectory of the ion beam induced by the magnetic field so that ions are deposited onto a targeted surface. In some embodiments, the first electric field is a dynamic electric field. In some embodiments, the first signal source is configured to provide a signal (e.g., a variable signal, such as a variable voltage) having a user-defined waveform to the first electrode set.

[0068] In some embodiments, the Wien filter is coupled to (or comprises) a second electric field source. In some embodiments, the Wien filter comprises a transverse second electrode set. The second electrode set, for example, may comprise the conductive coating of the magnet set. In some embodiments, the second electric field source comprises a second signal source coupled to a transverse second electrode set (e.g., a conductive coating of the magnet set). In some embodiments, the second electric field source is configured to generate a second electric field. In some embodiments, the second electric field is substantially parallel to the magnetic field and / or substantially orthogonal to the first electric field. In some embodiments, the second electric field source, including the second signal source and the second electrode set, is disposed along a second axis. The second axis, for example, may be disposed substantially orthogonal to the first axis and / or substantially parallel to the third axis.

[0069] In some embodiments, the second electric field is a dynamic electric field. For example, the second signal source may be configured to provide a variable signal (e.g., a variable voltage) to the second electrode set. In some embodiments, the second signal source is configured to provide a signal having a waveform (e.g., a sinusoidal waveform, a triangular waveform, or a square waveform) to the second electrode set. In some embodiments, the waveform comprises a voltage difference that varies between about 0-100V, about 0-75V, about 0-50V, about 0-25V, about 0- 10V, or about 0-5 V. In some embodiments, the waveform comprises a frequency of about 50 Hz to about 100 kHz, about 50 Hz to about 50 kHz, about 50 Hz to about 1 kHz, about 50 Hz to about 500 Hz, about 50 Hz to about 100 Hz, about 100 Hz to about 100 kHz, about 100 Hz to about 50 kHz, about 100 Hz to about 1 kHz, or about 100 Hz to about 500 Hz. hi some embodiments, the second signal source is configured to provide a signal (e.g., a variable signal, such as a variable voltage) having a user-defined waveform to the second electrode set.

[0070] In some embodiments, each of the first electric field and the second electric field is a dynamic electric field. In some embodiments, each of the first signal source and the second signal source is configured to independently provide a signal (e.g., a variable signal, such as a variable voltage) having a user-defined waveform to the first electrode set and the second electrode set.

[0071] In some embodiments, the present disclosure provides a method of depositing ions on a surface. In some embodiments, the method of depositing ions on a surface comprises ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through an ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through a Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter; and depositing the ions onto a surface.

[0072] In some embodiments, the present disclosure provides a method of using a fabrication system according to the present disclosure. In some embodiments, the method of using a fabrication system comprises: providing a fabrication system according to the present disclosure; ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through the ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through the Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter; and depositing the ions onto a surface.

[0073] In some embodiments, the first electric field is substantially orthogonal to the magnetic field, and the second electric field is substantially parallel to the magnetic field.

[0074] In some embodiments, the plurality of ions comprises a plurality of mass-to-charge (m / z) species. In some embodiments, the plurality of ions are positively charged or negatively charged. In some embodiments, the sample is capable of providing more than one m / z species. For example, each m / z species may independently have a value of about 100 to about 5000, about 100 to about 1000, about 100 to about 800, about 100 to about 600, about 150 to about 5000, about 150 to about 1000, about 150 to about 800, about 150 to about 600, about 200 to about 5000, about 200 to about 1000, about 200 to about 800, or about 200 to about 600. In some embodiments, the sample comprises more than one mass.

[0075] In some embodiments, an ionization source (e.g., an electrospray ionization (ESI) source) is (directly) coupled to the ion beam generator. In some embodiments, the ionization source is a soft ionization source (e.g., electrospray ionization (ESI) source, matrix-assisted laser desorption ionization (MALDI) source, and chemical ionization (CI) source).

[0076] In some embodiments, the method comprises passing the ions through the ion beam generator into the soft-landing chamber and through the Wien filter.

[0077] In some embodiments, the ions provided from the ionization source are transferred to an ion beam generator. In some embodiments, the step of passing the ions through the ion beam generator focuses the ions into an ion beam. In some embodiments, the step of passing the ions through the ion beam generator accelerates and focuses the ions, thereby providing an ion beam.

[0078] In some embodiments, the step of passing the ions through the ion beam generator comprises transferring the ions into the ion funnel; passing the ions through the ion guide; and focusing the ions with the focusing lens, thereby accelerating and focusing the ions into an ion beam. In some embodiments, the method comprises consecutively performing the steps of transferring the ions into the ion funnel; passing the ions through the ion guide; and focusing the ions with the focusing lens.

[0079] In some embodiments, the method comprises a step of transferring the ions into the ion funnel. In some embodiments, the step of transferring the ions into the ion funnel comprises passing the ions through an inlet (e.g., a heated inlet, such as an inlet heated to a temperature of about 120 °C) of an ion funnel. In some embodiments, the ion funnel is a high-pressure ion funnel operated at about 5 Torr. In some embodiments, the step of transferring the ions into the ion funnel comprises passing the ions through a first ion funnel and transferring the ions through a second ion funnel. In some embodiments, the second ion funnel is operated at about 0.5 Torr. In some embodiments, the method comprises a step of transferring the ions into the ion funnel, thereby accelerating and focusing the ions.

[0080] In some embodiments, the method comprises a step of passing the ions through the ion guide. In some embodiments, the ion guide is operated at about 10 mTorr. In some embodiments, the step of passing the ions through the ion guide provides a kinetic energy per charge state of about 50eV / z to the ions. In some embodiments, the method comprises a step of passing the ions through the ion guide, thereby accelerating and focusing the ions.

[0081] In some embodiments, the method comprises a step of focusing the ions with the focusing lens.

[0082] In some embodiments, the method comprises a step of transferring the ions into the soft- landing chamber. In some embodiments, the soft-landing chamber is operated at about 5 x 10’5Torr.

[0083] In some embodiments, the step of transferring the ions into the soft-landing chamber comprises the step of focusing the ions with the focusing lens. In some embodiments, the steps of transferring the ions into the soft-landing chamber and the step of focusing the ions with the focusing lens occur simultaneously.

[0084] In some embodiments, the method comprises a step of passing the ions (e.g., the ion beam) through the Wien filter, thereby providing deflected ions.

[0085] In some embodiments, the method comprises a step of applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter, thereby providing deflected ions.

[0086] In some embodiments, the step of passing the ions through the Wien filter comprises the step of applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter. In some embodiments, the step of passing the ions through the Wien filter and the step of applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter occur simultaneously.

[0087] In some embodiments, the method comprises a step of depositing the ions (e.g., the deflected ions) onto a surface. In some embodiments, the step of depositing the ions comprises simultaneously depositing a plurality of mass-to-charge (m / z) species. In some embodiments, the step of depositing the ions comprises simultaneously depositing the m / z species onto the surface. In some embodiments, the method provides a defined pattern (of deposited m / z species) on the surface. The defined pattern may be based on (e.g., correspond to) the applied electric field(s) and magnetic field in the Wien filter. For example, the defined pattern may be based on (e.g., correspond to) the applied dynamic electric field(s) in the Wien filter.

[0088] In some embodiments, the present disclosure provides a method of using a fabrication system, the method comprising the steps of: providing a fabrication system having an ion funnel, an ion guide, a soft-landing chamber, a focusing lens, and a Wien filter, the ion funnel has an inlet and an outlet, the ion guide is coupled to the outlet of the ion funnel, the soft-landing chamber is coupled to the ion guide, the focusing lens is coupled to the soft-landing chamber, and the Wien filter is coupled to the soft-landing chamber, wherein the Wien filter includes an electric field source and a magnetic field source; producing ions in an electrospray ionization source; transferring the ions into the ion funnel; passing the ions through the ion guide; transferring the ions into the soft-landing chamber; focusing the ions with the focusing lens; passing the ions through the Wien filter; and depositing the ions onto a surface.

[0089] In some embodiments, the method comprises sequentially passing the ions through the ion funnel, ion guide, and focusing lens, into the soft-landing chamber, and through the Wien filter. Ions produced in an ESI source are transferred through a heated inlet (~120°C) into a high-pressure ion funnel operated at around 5 Torr. Ions may then be transferred through a second ion funnel (~0.5 Torr) and bent ion guide (~10mTorr) into a soft-landing chamber (~5xlOsTorr) and focused using an einzel lens. The bent ion guide is biased to inject thermalized ions with a kinetic energy per charge state of ~50eV / z. In some embodiments, the soft-landing chamber comprises a Wien filter and a surface. The Wien filter may be mounted in the soft-landing chamber. In some embodiments, the surface is (directly) coupled to the Wien filter. In some embodiments, the surface is disposed adjacent to, but separate from the Wien filter.

[0090] In some embodiments, the surface is a detector, such as an lonCCD™ position sensitive detector. Ion beam characterization may be conducted using an lonCCD™ position sensitive detector positioned around four inches away from an exit of the Wien filter. In some embodiments, the surface is disposed about 0 cm to about 15 cm (e.g., about 5 cm to about 15 cm, such as about 11.5 cm) from the Wien filter. In some embodiments, the fabrication system does not comprise an aperture (e.g., a m / z filter) disposed between the Wien filter and the surface. In some embodiments, the fabrication system does not comprise an aperture (e.g., a m / z filter) disposed between the ion beam generator and the Wien filter. A skilled artisan may select other suitable ways to provide the Wien filter of the fabrication system, within the scope of the present disclosure.

[0091] In certain circumstances, the fabrication system may be utilized for parallel deposition. In some embodiments, the second electrode set is grounded. For example, a first electric field from a first electric field source and a magnetic field from a magnetic field source is applied to ions in the Wien filter, wherein the first electric field is orthogonal to the magnetic field. For instance, the Wien filter may be used to generate separate ion trajectories using the ExB, as shown in FIG. 3. In some embodiments, the NdFeB magnets provide the magnetic field (B). Stainless steel electrodes may be used to provide an electric field (EDC) that deflect ions opposite their trajectory induced by the magnetic field. An lonCCD™ image is shown in FIG. 4, which illustrates the simultaneous parallel deposition of three organic dye species (m / z 253, 329, and 470). With continued reference to FIG. 4, the total ion current was InA, there was lateral separation of around four millimeters, and there was slight aberration due to inherent fringing field inhomogeneity.

[0092] In certain circumstances, the fabrication system may be configured for line-writing for targeted area coverage, as shown in FIG. 5A. For instance, a signal (e.g., an alternating current (AC)) may be applied to conductive coatings of the magnetic plates. In some embodiments, as shown between FIGs. 6-7, the AC amplitude may be reduced from around 7Vp-p to around 3.5Vp-p which may decrease a line length for all m / z species. In some embodiments, as shown between FIGs. 6 and 8, the AC frequency may be increased from around 100Hz to around 50kHz which may decrease a line length for all m / z species with a more dramatic effect for higher m / z ions. This effect may be seen when a period of oscillation is within a flight time of an ion through the filter.

[0093] Tn certain circumstances, the fabrication system may include ways to adjust the deposition of ions based on an AC waveform type, as shown in FIGs. 9A-9C. For instance, a triangular waveform was found to provide a more uniform coverage compared to a sinewave due to a more uniform sweep rate. In another example, a square waveform was found to primarily focus its deposits at the ends of a line with maximized concentration. In yet another example, sinusoidal driven fields were also found to produce concentrated groupings at the ends of the lines due to a non-uniform sweep rate.

[0094] In certain circumstances, a second AC field may be applied to the electrode plates which may enable the production of two-dimensional patterns from user defined waveforms, as shown in FIGs. 10, 11A, 11B, 12A, and 12B. One skilled in the art may select other suitable ways to adjust the deposition of ions based on the AC waveform type, within the scope of the present disclosure.

[0095] Advantageously, as shown in FIGs. 10, 11A, 11B, 12A, and 12B, the fabrication system may utilize a Wien filter with applied AC waveforms to facilitate mass resolved one-dimensional and two-dimensional parallel deposition from a multi component continuous ion beam with minimal to no ion loss.

[0096] The fabrication system may be used in various ways. For instance, the fabrication system may be used according to a method. As shown in Figure 13, the method may include a step of producing ions in an electrospray ionization source. Next, the ions may be transferred through a heated inlet into an ion funnel. In some embodiments, the ion funnel may include a first ion funnel and a second ion funnel. In some embodiments, the first ion funnel may be operated at around 5 Torr. The ions may then be transferred through the second ion funnel operated at around 0.5 Torr. Afterwards, the ions may pass through a bent ion guide into a soft-landing chamber. Then, the ions may be focused using a focusing lens, such as an einzel lens. Next, the ions may pass through the Wien filter. Afterwards, the ions may be deposited onto a surface to be fabricated. A skilled artisan may select other suitable ways to use the Fabrication system, within the scope of the present disclosure.

[0097] Example embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those who are skilled in the art. Numerous specific details are set forth such as examples of specific components, devices, and methods, to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details need not be employed, that example embodiments may be embodied in many different forms, and that neither should be construed to limit the scope of the disclosure. In some example embodiments, well-known processes, well-known device structures, and well-known technologies are not described in detail. Equivalent changes, modifications and variations of some embodiments, materials, compositions, and methods can be made within the scope of the present technology, with substantially similar results.

[0098] In some embodiments, the fabrication system of the present disclosure is used in preparative mass spectrometry. For example, the fabrication system of the present disclosure may be useful in the manufacturing of surfaces with defined patterns of mass-selected ions.

[0099] Additional embodiments, features, and advantages of the disclosure will be apparent from the following detailed description and through practice of the disclosure. The compounds of the present disclosure can be described as embodiments in any of the following enumerated clauses. It will be understood that any of the embodiments described herein can be used in connection with any other embodiments described herein to the extent that the embodiments do not contradict one another.

[0100] 1. A fabrication system configured to deposit ions on a surface, the fabrication system comprising: an ion beam generator; a soft-landing chamber coupled to the ion beam generator; and a Wien filter disposed within the soft-landing chamber, wherein the Wien filter is coupled to a first electric field source, a second electric field source, and a magnetic field source.

[0101] 2. The fabrication system of clause 1 , wherein the first electric field source comprises a first signal source coupled to a transverse first electrode set, the first electric field source configured to generate a first electric field.

[0102] 3. The fabrication system of clause 1 or 2, wherein the second electric field source comprises a second signal source coupled to a transverse second electrode set, the second electric field source configured to generate a second electric field.

[0103] 4. The fabrication system of any one of the preceding clauses, wherein the first electrode set is disposed along a first axis and the second electrode set is disposed along a second axis, and the first axis is substantially orthogonal to the second axis.

[0104] 5. The fabrication system of any one of the preceding clauses, wherein the magnetic field source comprises a transverse magnet set configured to generate a magnetic field, wherein the magnetic field source is disposed on a third axis, the third axis is disposed substantially parallel with the second axis. 6. The fabrication system of clause 5, wherein the magnet set comprises a permanent magnet (e.g., a NdFeB magnet) disposed along the third axis.

[0105] 7. The fabrication system of clause 6, wherein the permanent magnet comprises a conductive coating (e.g., a nickel coating), and the second electrode set comprises the conductive coating.

[0106] 8. The fabrication system of clause 6, wherein the magnet set comprises a plurality of permanent magnets (e.g., NdFeB magnets) disposed along the third axis.

[0107] 9. The fabrication system of any one of the preceding clauses, wherein the first electric field is a static electric field or a dynamic electric field.

[0108] 10. The fabrication system of any one of clauses 2-9, wherein the first electric field is a static electric field, and the first signal source is configured to provide a constant voltage to the first electrode set.

[0109] 11. The fabrication system of clause 10, wherein the first electrode set comprises a top electrode and a bottom electrode, wherein the first signal source is configured to provide the constant voltage to the top electrode and the bottom electrode is grounded.

[0110] 12. The fabrication system of clause 10 or 11, wherein the first signal source is configured to provide the constant voltage to the first electrode set to offset the trajectory of the ion beam induced by the magnetic field so that ions are deposited onto a targeted surface.

[0111] 13. The fabrication system of any one of the preceding clauses, wherein the second electric field is a dynamic electric field.

[0112] 14. The fabrication system of clause 13, wherein the second signal source is configured to provide a signal (e.g., a variable signal, such as a variable voltage) having a triangular waveform to the second electrode set.

[0113] 15. The fabrication system of clause 13, wherein the second signal source is configured to provide a signal (e.g., a variable signal, such as a variable voltage) having a square waveform to the second electrode set.

[0114] 16. The fabrication system of clause 13, wherein the second signal source is configured to provide a signal (e.g., a variable signal, such as a variable voltage) having a sinusoidal waveform to the second electrode set.

[0115] 17. The fabrication system of any one of clauses 1-9, wherein each of the first electric field and the second electric field is a dynamic electric field.

[0116] 18. The fabrication system of clause 17, wherein each of the first signal source and the second signal source is configured to independently provide a signal having a user-defined waveform to the first electrode set and the second electrode set.

[0117] 19. The fabrication system of any one of the preceding clauses, wherein the system does not comprise an aperture disposed between the Wien filter and the surface.

[0118] 20. The fabrication system of any one of the preceding clauses, wherein the ion beam generator comprises an ion funnel having an inlet and an outlet, an ion guide coupled to the outlet of the ion funnel, and a focusing lens coupled to the soft-landing chamber.

[0119] 21 . The fabrication system of clause 20, wherein the Wien filter is disposed adjacent to, but separate from the focusing lens.

[0120] 22. The fabrication system of clause 20 or 21, wherein the focusing lens comprises an einzel lens.

[0121] 23. The fabrication system of any one of clauses 20-22, wherein the inlet of the ion funnel is heated to around 120 degrees Celsius (°C).

[0122] 24. The fabrication system of any one of clauses 20-23, wherein the ion funnel comprises a first ion funnel and a second ion funnel, the first ion funnel operates at a higher pressure than the second ion funnel.

[0123] 25. A method of depositing ions on a surface, the method comprising the steps of: ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through an ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through a Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter, wherein the first electric field is substantially orthogonal to the magnetic field, and the second electric field is substantially parallel to the magnetic field; and depositing the ions onto a surface.

[0124] 26. The method of clause 25, wherein the first electric field source comprises a first signal source coupled to a transverse first electrode set, and the second electric field source comprises a second signal source coupled to a transverse second electrode set.

[0125] 27. The method of clause 25 or 26, wherein the magnetic field source comprises a transverse magnet set.

[0126] 28. The method of any one of clauses 25-27, wherein the first electric field is a static electric field or a dynamic electric field.

[0127] 29. The method of any one of clauses 26-28, wherein the first electric field is a static electric field, and the first signal source is configured to provide a direct current to the first electrode set.

[0128] 30. The method of any one of clauses 25-29, wherein the second electric field is a dynamic electric field. 31. The method of clause 30, wherein the second signal source is configured to provide a signal (e.g., a variable signal, such as a variable voltage) having a sinusoidal waveform, a triangular waveform, or a square waveform to the second electrode set.

[0129] 32. The method of any one of clauses 25-28, wherein each of the first electric field and the second electric field is a dynamic electric field.

[0130] 33. The method of clause 32, wherein each of the first signal source and the second signal source is configured to independently provide a signal having a user-defined waveform to the first electrode set and the second electrode set.

[0131] 34. The method of any one of clauses 25-33, wherein the plurality of ions comprises a plurality of mass-to-charge (m / z) species.

[0132] 35. The method of clause 34, wherein the step of depositing comprises simultaneously depositing the m / z species.

[0133] 36. A method of using a fabrication system, the method comprising the steps of: providing a fabrication system according to any one of clauses 1-24; ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through the ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through the Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter, wherein the first electric field is substantially orthogonal to the magnetic field, and the second electric field is substantially parallel to the magnetic field; and depositing the ions onto a surface.

[0134] 37. The method of clause 36, wherein the ion beam generator comprises an ion funnel having an inlet and an outlet, an ion guide coupled to the outlet of the ion funnel, and a focusing lens coupled to the soft-landing chamber, and wherein the step of passing the ions through the ion beam generating device comprises transferring the ions into the ion funnel; passing the ions through the ion guide; and focusing the ions with the focusing lens.

[0135] 38. The method of clause 36 or 37, wherein the first electric field source comprises a first signal source coupled to a transverse first electrode set, and the second electric field source comprises a second signal source coupled to a transverse second electrode set.

[0136] 39. The method of any one of clauses 36-38, wherein the magnetic field source comprises a transverse magnet set. 40. The method of any one of clauses 36-39, wherein the first electric field is a static electric field or a dynamic electric field.

[0137] 41. The method of any one of clauses 36-40, wherein the first electric field is a static electric field, and the first signal source is configured to provide a constant voltage to the first electrode set.

[0138] 42. The method of any one of clauses 36-41, wherein the second electric field is a dynamic electric field.

[0139] 43. The method of any one of clauses 36-42, wherein the second signal source is configured to provide a signal (e.g., a variable signal, such as a variable voltage) having a sinusoidal waveform, a triangular waveform, or a square waveform to the second electrode set.

[0140] 44. The method of any one of clauses 36-40, wherein each of the first electric field and the second electric field is a dynamic electric field.

[0141] 45. The method of clause 44, wherein each of the first signal source and the second signal source is configured to independently provide a signal having a user-defined waveform to the first electrode set and the second electrode set.

[0142] 46. The method of any one of clauses 37-45, wherein the focusing lens comprises an einzel lens.

[0143] 47. The method of any one of clauses 37-45, wherein the ion funnel comprises a first ion funnel and a second ion funnel, wherein the first ion funnel operates at a higher pressure than the second ion funnel.

[0144] 48. The method of any one of clauses 36-47, wherein the plurality of ions comprises a plurality of mass-to-charge (m / z) species.

[0145] 49. The method of clause 48, wherein the step of depositing comprises simultaneously depositing the m / z species.

[0146] EXAMPLES

[0147] The following examples serve to illustrate the present disclosure. The examples are not intended to limit the scope of the claimed invention in any way.

[0148] EXAMPLE 1

[0149] Materials and Methods

[0150] Instrumentation: A schematic of the custom designed ion soft-landing instrument is shown in Fig. 2A. Electrospray ionization (ESI) was performed by introducing a sample solution through a fused silica capillary (Polymicro Technologies, Phoenix, AZ, USA, 50 pm ID, 150 pm OD) via a programmable syringe pump (Chemyx, Stafford, TX, USA) at 1 pL / min flow rate and applying a ± 3.5 kV voltage to the syringe needle. In this study, one of the two heated inlets was used and maintained at 120°C for desolvation of the electrosprayed droplets. A differentially pumped tandem ion funnel transferred ions into a bent ion guide chamber where they were separated from the molecular beam and focused through collisional cooling. Thermalized ions are then accelerated into the high vacuum chamber (5 x 10"5Torr) of the instrument by applying a DC bias to the bent ion guide, which defines the kinetic energy of the ion beam. In this study, a kinetic energy of 50 eV / z was used. In the high vacuum chamber, an einzel lens was used to focus the ion beam before it entered a 5.08 cm Wien filter. Ions exiting the Wien filter traversed an 11.5 cm drift region before impacting a surface. Ion current on the surface was measured using a 9103 Picoammeter (RBD Instruments, Bend, OR, USA). The surface was a position-sensitive lonCCD™ detector (01 Analytical, Pelham, AL, USA). The lonCCD was used to measure the lateral deflection (y-axis) of ions. The lonCCD was a 46 mm- long 1-D array containing 2126 measuring elements (pixels), where each pixel has a width of 21 pm and height of 1.5 mm. The signal output of each pixel is digitized by a 16-bit analog-to-digital converter and deported as a discrete or digital number (dN). The lonCCD was mounted onto a linear translator that moves transversally (x-axis) by a pixel height distance between measurements so that a 2-D surface image of ion intensity could be visualized. The stage was controlled by a rotating mechanism outside the instrument that used a calibrated gauge to measure rotation-to-translation motion. Surface plots were rendered using MATLAB® R2023a with interpolated shading to provide a continuous color visualization of surface signal intensity. The exit plane of the Wien filter and lonCCD surface plane were aligned parallel to each other to minimize image distortion.

[0151] Wien filter design: Developed by Wilhelm Wien in 1898, the Wien filter utilizes crossed electric and magnetic (E x B) fields to discriminate ions based on their velocities. As illustrated in Fig. IB, a transiting ion of a given charge (+ q) and velocity (v) orthogonal to both fields experiences an opposing electric force (FE = qE) and magnetic force (FB = qvB), which results in a deflection of the ion beam. When the ion’s velocity matches the ratio of the field strengths (v = E / B), the magnitudes of the two forces are equal and an ion does not experience a net force. This condition allows for an ion to transit through the filter with a linear trajectory. Lateral deflection occurs in the 4-y-axis for faster moving ions (v > E / B) and -y-axis for slower ions (v < E / B). Ions with the same kinetic energy per charge but different m / z will have different velocities. Therefore, Wien filters enable mass analysis of ions with equal kinetic energy per charge. Furthermore, the mass resolving power of a Wien filter decreases as mass increases due to a decreasing velocity difference between adjacent mass ions.

[0152] Fig. 2B shows a drawing of the open-faced cube Wien filter designed and constructed in this study. The device consists of two opposing stainless-steel electrodes and two opposing nickel-plated permanent NdFeB magnets (K&J Magnetics, Pipersville, PA, USA) with opposite facing polarity. Each electrode and magnetic plate measures 5.08 cm x 5.08 cm x 0.64 cm and are joined with nonconductive poly lactic acid brackets printed using a Prusa Research MK4 3D printer (Prague, Czech Republic). The top electrode (Fig. 2B) is connected to a Modular Intelligent Power Source (MIPS) from GAA Custom Electronics (Kennewick, WA, USA) while the opposite facing bottom electrode was either grounded to the instrument chamber or connected to the MIPS. The conductive coatings of the magnetic plates were independently connected to the MIPS or a dual-channel RIGOL DG1022Z arbitrary waveform generator (Beijing, China).

[0153] Chemicals: Methanol and three organic salt dyes were obtained from Sigma-Aldrich (St. Louis, MO, USA). The following dyes were used in this study: 2-[4-(dimethylamino)styryl]-l- ethylpyridinium iodide (DASPEI) red dye, malachite green chloride (MGC1) green dye, and Victoria Blue B (VBB) blue dye. All dyes were dissolved in one vessel with methanol at a concentration of 50 pM each. These species ionize in positive ESI mode as DASPE+(m / z 253), MG+(nr / z 329), and VBB+(zw / z 470). Sodium c / o o-dodecaborate clusters, Na2Bi2Xi2 (X=F, Br), were generously provided by Dr. Jonas Warneke (Leipzig University, Germany) and dissolved in methanol at a concentration of 10 pM each. These clusters ionize in negative ESI mode as B12F122’ (m / z 179) and Bi2Bri22‘ (m / z 545).

[0154] Calibration of magnetic field strength: An ion’s trajectory was linearized through the Wien filter when its velocity equaled the ratio of electric and magnetic field strengths (v = E / B). To calibrate the magnetic field strength, the organic dyes (m / z 253, 329, and 470) were accelerated to 35 eV and linearized through the Wien filter by changing the voltage difference across the electrode plates. The position-sensitive lonCCD detector was laser aligned to know when an ion beam’s trajectory was linearized. The magnetic field strength was determined from the equation B = E / v, where the velocity of the ion was determined from its mass and kinetic energy. The electric field strength was determined from the voltage difference across the electrode plates divided by their separation distance (E = AV / d), where d = 0.0508m. Table 1 summarizes the calculated magnetic field strength from each linearized ion beam. The uncertainty in magnetic field strength would largely be due to the uncertainty from the ion’s kinetic energy. A kinetic energy of 35 ± 2 eV was estimated, which yields a magnetic field strength of B = 0. 10 ± 0.01 T at each measured ion. Table 1. Calibrated magnetic field strength from linearized ion beams

[0155] * Value of AV applied to electrode plates that linearized ion beam

[0156] Simulations: The 1-D and 2-D surface patterning experiments were supplemented with SIMION 8.2 software simulations to model ion trajectories through the dynamic field Wien filter and drift region prior to impacting a surface.

[0157] SIMION 8.2 software was used to simulate trajectories of ions through the dynamic field Wien filter and drift region prior to impacting a surface. All dimensions and applied potentials were modeled to reflect their experimental values. The simulated incident ion beam was modeled based on a typical collimated beam produced in the instrument. Specifically, the simulated ion beam consisted of a collimated gaussian distribution with a FWHM of 1 mm and kinetic energy of 50 eV with a gaussian distribution of 1 eV. The simulated dynamic fields were produced from a .LUA user program, which changes the simulated voltages applied to the electrodes as a function of time. 5000 ions were generated for each m / z. Fig. 5B (left) shows the simulated surface line distributions of the dye mixture from a dipolar sinusoidal waveform of 7 Vp.pat 100 Hz applied to the conductive coatings of the magnetic plates. The waveform was changed to triangular and square, observed in Fig. 5B (center) and Fig. 5B (right), respectively. The experimental distributions in the main text agree with the simulations. The line profile from sinusoidal waveforms causes the ends of the lines to have more concentration of ions than in the center due to the non-uniform sinusoidal sweep rate. A triangular waveform yields a uniform sweep rate which gives a flatter distribution throughout the line. A square waveform only deposits ions at extreme ends, maximizing ion concentration at these extremes.

[0158] Methods: The instrument shown in Fig. 2A was used to evaluate multiple modes of operation of the Wien filter described in detail in the following sections. In each experiment, the lonCCD was used to obtain 2-D images of the ion beam and the picoammeter was used to measure the total ion current on the surface.

[0159] Fig. 11A reveals the voltage ramp profile used to generate the simulated mass-resolved 2-D pattern resembling the letter “P” for B i2Fi22-and B Br2' ions in Fig. 11B. The experimental results have more misalignment and aberrations than the simulated pattern, which is most likely due to differences in the actual vs simulated electric and magnetic fields, as well as slight misalignments between the focusing elements and Wien filter. This could also explain why the simulated voltage difference across the electrode plates was lower than the experimental values. Furthermore, the simulated results show more y-axis separation between the m / z species, which might indicate differences in simulated vs experimental magnetic field strengths. However, the goal of the simulations was to test the validity of the user-defined waveforms applied to the Wien filter to deposit ions onto a surface with an intended 2-D pattern, which the simulated result in Fig. 11B helped validate.

[0160] Table 2 provides the actual voltages applied to each plate of the Wien filter at given time segments used to generate the 2-D ion pattern in Figs. 12 A and 12B. A change in voltage between time values indicates a linear ramp was performed between those time values.

[0161] Table 2. Voltages applied to Wien filter for 2-D ion patterning.

[0162] Parameters used to calibrate magnetic field strength are shown in Table 1. Simulated 1- D deposition profiles of organic dye mixture using sinusoidal, triangular, and square waveforms applied to Wien filter are shown in Fig. 5B. Simulated 2-D deposition pattern of boron cluster mixture using user-defined waveform applied to Wien filter shown in Fig. 11A. Actual voltages applied to each plate of the Wien filter at given time segments shown in Table 2.

[0163] EXAMPLE 2

[0164] Parallel deposition using a static electric field

[0165] Fig. 4 shows the rendered surface image from the ion beam profiles resulting from the simultaneous (parallel) deposition of the dye mixture using static fields applied to the Wien filter. The conductive coatings of the magnets and bottom electrode were grounded at OV, while a 15 V DC was applied to the top electrode to offset the ion deflection induced by the magnetic field. Measuring deflection relative to the point in-line with the incident ion beam (x = 0 mm, y = 0 mm), the signal was observed of DASPE+(m / z 253) at a lateral position of y = 15.2 mm, MG+(m / z 329) at y = 11.1 mm, and VBB+(m / z 470) at y = 6.4 mm. The difference in signal intensities is most likely due to RF voltages applied to the tandem ion funnel and bent ion guide that affect the transmission of different m / z ions. Total surface ion current was measured to be ~1 nA throughout the duration of measurements. The lateral spacing between each tn / z species demonstrates that the permanent magnets provide an adequate field strength to resolve the multicomponent hyperthermal ion beam. Estimations from a calibration procedure detailed in Table 1 determined this field strength to be B = 0. 10 ± 0.01 T. Simulated ion trajectories through the Wien filter are displayed in Fig. 3 to visualize the mass dependent y-axis deflection of the multicomponent beam.

[0166] The ion beam profiles in Fig. 4 reveal a slight elongation along the x-axis. The elongation could be caused by the lonCCD measurement of the beam profile. Because the lonCCD is a 1-D detector, beam profiles were acquired using non-uniform pixels. Specifically, a small pixel size of 21 mm was used along the y-axis and a coarse pixel size of 1.5 mm was used along the x-axis. This could yield the appearance of beam cross-section elongation along the x-axis. Alternatively, fringing electric and magnetic fields could result in the observed elongation of the ion beam. It is noted that the designed Wien filter has non-vanishing electric and magnetic fields that extend beyond its physical dimensions. Differences in the magnetic and electric fringing field distributions can cause beam aberrations inherent in non-multipole Wien filters. This can lead to beam astigmatism due to ions whose velocity component is parallel to the magnetic field causing no returning force in this dimension. In other words, an incident beam of a circular cross-section will emerge with an elliptical shape whose major axis is parallel with the magnetic field. Regardless of the source of the ion beam elongation observed in Fig. 4, this beam distortion is not a significant concern for parallel deposition soft-landing experiments.

[0167] EXAMPLE 3

[0168] 1-D surface patterning

[0169] To achieve 1-D surface patterning of mass-selected ions, the 15 VDC applied to the top electrode and grounding of the bottom electrode was maintained and a dipolar sinusoidal waveform was applied to the conductive coatings of the magnets. This approach generated a dynamic electric field parallel to the magnetic field, which scans the ion beam along the x-axis while maintaining lateral (y-axis) separation. Fig. 6 illustrates the surface image of the dye mixture obtained by applying an AC amplitude of 7 Vp.pat 100 Hz to the magnets. A transversal (x-axis) “spraying’- of ions or “line-writing” measured by translating the lonCCD along this axis for a total distance of 27 mm in 1.5 mm increments was observed. The AC frequency of 100 Hz was chosen because it is fast enough to give a stable lonCCD signal for each pixel integration event (100 ms). At lower AC frequency, it was difficult to obtain a stable signal because ions rarely reach the detector during its integration event. A longer integration time could be used to allow more ions to hit the detector, but the noise level also increases with an increase in integration time due to dark current effects. Higher AC frequencies caused ion array lengths to decrease. Using these settings, the length of each m / z line is 20 mm while the lateral separation remained the same as that observed in Fig. 4. It is noted that the extreme x-positions of each line in Figs. 6-8 have asymmetry, which is likely attributed to different focusing of ions deflected in the -x and -x directions. This direction dependent focusing is most likely due to inhomogeneous fields. Also, the ends of each line have a higher ion density as compared to their centers, which is due to the sinusoidal oscillating field. Specifically, the sinusoidal waveform generates a dynamic field that oscillates along the x-axis with a non-uniform rate. The slowest change in the field magnitude of the electric field occurs near the waveforms’ peak and trough, where ions reach the extreme x-positions. Consequently, ions spend more time in these regions, contributing to higher signal intensities. Conversely, as the field strength decreases, the rate of change in the magnitude increases, resulting in fewer ions in the center of the line. In other words, the magnitude of the field strength determines the extent of ion deflection along the x-axis, while the rate of variation in field strength dictates ion density at specific locations. The observed distributions agree with the simulated data shown in Fig. 5B. When the AC amplitude is reduced by half to 3.5 Vp.p, line lengths of all m / z species decrease in half to 10 mm, as seen in Fig. 7. This demonstrated a linear relationship between the AC amplitude and maximum transversal deflection. It was also investigated how the field oscillation frequency affects line length. When the frequency is increased from 100 Hz to 50 kHz (Fig. 8), line lengths decrease in an m / z dependent manner. The line length of m / z 253 is 7.5 mm, m / z 329 is 4.5 mm, and m / z 470 has the smallest length of 3.0 mm. This behavior is explained by differences in the phase of the oscillating field experienced by ions between the time they enter and exit the field. The degree of ion deflection is maximized when there is little to no phase change at extreme field strengths, as observed at 100 Hz. However, at 50 kHz, ions experience a significant phase change during their flight time through the oscillating field, which reduces the maximum degree of deflection. This diminishing effect is more prevalent for heavier slower moving ions, which is what was observed in measurements. Fig. 5A visualizes the trajectories of the dye mixture through the Wien filter to show the x-axis “spraying” pattern of ions induced by the sinusoidal AC (7 Vp.p, 100 Hz) waveforms applied to the magnetic plates, while maintaining y-axis lateral mass separation.

[0170] Due to the non-uniform distribution of ion coverage for each line in Figs. 6-8 attributed to the non-uniform sweep rate of the dynamic field generated by a sinusoidal waveform, other types of AC waveforms applied to the magnet plates were explored to better understand how to control ion density along the lines. Fig. 9B shows the ion beam profile of the dye mixture generated by a 100 Hz triangular waveform at 7 Vp.p. The distribution of ions for each line is more uniform as compared to those in Fig. 6. This is due to the linear change in voltage from the triangular waveforms which causes a constant sweep rate along the x-axis. When square waveforms are applied to the magnet plates (Fig. 9C), only two distributions are observed for each m / z species centered at both ends of each line where signal intensity is maximized. Because the square waveform switches only the polarity of the electric field and does not affect its magnitude, there is little to no ion signal observed in between the two lobes of each m / z distribution. The ion beam profiles shown in Figs. 9B and 9C are in good agreement with the simulated profile data shown in Fig. 5B. These experiments reveal that the shape of the waveform along with its amplitude and frequency are important parameters that control ion distributions on surfaces deposited into 1-D arrays using the dynamic Wien filter.

[0171] EXAMPLE 4

[0172] 2-D ion surface patterning

[0173] As demonstrated in Example 3, the dynamic operation of the Wien filter, in which an AC electric field was generated between the magnet plates and DC field was applied to the electrodes enabled ion deposition of different m / z species into 1-D arrays. Next, the dynamic control of electric fields generated in both x- and y-direction were employed to enable 2-D patterning of ions while maintaining mass analysis resulting from the presence of a magnetic field. This was achieved by connecting the electrodes (y-axis) and conductive coatings of the magnetic plates (x- axis) to the MIPS generator configured to generate user-defined waveforms. As a proof-of- concept, a waveform profile was constructed shown in Fig. 12A to generate a 2-D pattern resembling the letter “P”. The design of the waveform was assisted by SIMION simulations of the ion beam profile (Figs. 11A and 11B). In this example, the 2-D pattern was divided into four sections. For each section, a segment in the time profile of the voltages applied in both x- and y- direction was generated, as shown in Fig. 12A. Each segment contains a voltage ramp in one direction (x- or y-axis) and constant voltage in the other direction. The speed of the non-zero voltage ramp for all segments was set to 0.67 V / ms, which helped ensure an even distribution of ion patterning. The total time to pattern the surface with the letter “P” is 15 ms. Voltages applied to each plate for each time segment are provided in Table 2. Using this waveform repeated multiple times for the entire integration event of the detector to enhance the signal-to-noise ratio, a mixture of B12F122" (m / z 179) and Bi2Bri22’ (m / z 545) was separated into two P-shaped profiles visualized in Fig. 12B. It is noted that negative ions deflect opposite positive ions in the y-axis, therefore, the y-axis in Fig. 12B is flipped to visualize the intended 2-D pattern. Additionally, different RF drive voltages were used for transmitting ions in positive and negative ionization modes, which could explain different m / z transmission efficiencies and signal differences between the boron cluster species. Although the surface image shown in Fig. 12B closely resembles the desired 2-D pattern, there are slight misalignments and aberrations in this pattern that most likely arise from the electric and magnetic fringing field differences of the Wien filter. If desired, one could improve the shape of the pattern by terminating these fringing fields or using a higher order multipole Wien filter.

Claims

WHAT IS CLAIMED IS:

1. A fabrication system configured to deposit ions on a surface, the fabrication system comprising: an ion beam generator; a soft-landing chamber coupled to the ion beam generator; and a Wien filter disposed within the soft-landing chamber, wherein the Wien filter is coupled to a first electric field source, a second electric field source, and a magnetic field source.

2. The fabrication system of claim 1, wherein the first electric field source comprises a first signal source coupled to a transverse first electrode set, the first electric field source configured to generate a first electric field.

3. The fabrication system of claim 2, wherein the second electric field source comprises a second signal source coupled to a transverse second electrode set, the second electric field source configured to generate a second electric field.

4. The fabrication system of claim 3, wherein the first electrode set is disposed along a first axis and the second electrode set is disposed along a second axis, and the first axis is substantially orthogonal to the second axis.

5. The fabrication system of claim 4, wherein the magnetic field source comprises a transverse magnet set configured to generate a magnetic field, wherein the magnetic field source is disposed on a third axis, the third axis is disposed substantially parallel with the second axis.

6. The fabrication system of claim 5, wherein the magnet set comprises a permanent magnet (e.g., a NdFeB magnet) disposed along the third axis.

7. The fabrication system of claim 6, wherein the permanent magnet comprises a conductive coating (e.g., a nickel coating), and the second electrode set comprises the conductive coating.

8. The fabrication system of claim 6, wherein the magnet set comprises a plurality of permanent magnets (e.g., NdFeB magnets) disposed along the third axis.

9. The fabrication system of claim 8, wherein the first electric field is a static electric field or a dynamic electric field.

10. The fabrication system of claim 9, wherein the first electric field is a static electric field, and the first signal source is configured to provide a constant voltage to the first electrode set.

11. The fabrication system of claim 10, wherein the first electrode set comprises a top electrode and a bottom electrode, wherein the first signal source is configured to provide the constant voltage to the top electrode and the bottom electrode is grounded.

12. The fabrication system of claim 10, wherein the first signal source is configured to provide the constant voltage to the first electrode set to offset the trajectory of the ion beam induced by the magnetic field so that ions are deposited onto a targeted surface.

13. The fabrication system of claim 9, wherein the second electric field is a dynamic electric field.

14. The fabrication system of claim 13, wherein the second signal source is configured to provide a signal having a triangular waveform to the second electrode set.

15. The fabrication system of claim 13, wherein the second signal source is configured to provide a signal having a square waveform to the second electrode set.

16. The fabrication system of claim 13, wherein the second signal source is configured to provide a signal having a sinusoidal waveform to the second electrode set.

17. The fabrication system of claim 9, wherein each of the first electric field and the second electric field is a dynamic electric field.

18. The fabrication system of claim 17, wherein each of the first signal source andthe second signal source is configured to independently provide a signal having a user- defined waveform to the first electrode set and the second electrode set.

19. The fabrication system of claim 1, wherein the system does not comprise an aperture disposed between the Wien filter and the surface.

20. The fabrication system of claim 1, wherein the ion beam generator comprises an ion funnel having an inlet and an outlet, an ion guide coupled to the outlet of the ion funnel, and a focusing lens coupled to the soft-landing chamber.

21. The fabrication system of claim 20, wherein the Wien filter is disposed adjacent to, but separate from the focusing lens.

22. The fabrication system of claim 20, wherein the focusing lens comprises an einzel lens.

23. The fabrication system of claim 20, wherein the ion funnel comprises a first ion funnel and a second ion funnel, the first ion funnel operates at a higher pressure than the second ion funnel.

24. The fabrication system of claim 20, wherein the inlet of the ion funnel is heated to around 120 degrees Celsius (°C).

25. A method of depositing ions on a surface, the method comprising the steps of: ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through an ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through a Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter, wherein the first electric field is substantially orthogonal to the magnetic field, and the second electric field is substantially parallel to the magnetic field; and depositing the ions onto a surface.

26. The method of claim 25, wherein the first electric field source comprises a first signal source coupled to a transverse first electrode set, and the second electric field source comprises a second signal source coupled to a transverse second electrode set.

27. The method of claim 26, wherein the magnetic field source comprises a transverse magnet set.

28. The method of claim 25, wherein the first electric field is a static electric field or a dynamic electric field.

29. The method of claim 28, wherein the first electric field is a static electric field, and the first signal source is configured to provide a constant voltage to the first electrode set.

30. The method of claim 25, wherein the second electric field is a dynamic electric field.

31. The method of claim 30, wherein the second signal source is configured to provide a signal having a sinusoidal waveform, a triangular waveform, or a square waveform to the second electrode set.

32. The method of claim 28, wherein each of the first electric field and the second electric field is a dynamic electric field.

33. The method of claim 32, wherein each of the first signal source and the second signal source is configured to independently provide a signal having a user-defined waveform to the first electrode set and the second electrode set.

34. The method of claim 25, wherein the plurality of ions comprises a plurality of mass-to-charge (m / z) species.

35. The method of claim 34, wherein the step of depositing comprises simultaneously depositing the m / z. species.

36. A method of using a fabrication system, the method comprising the steps of:providing a fabrication system according to claim 1 ; ionizing a sample in an ionization source to provide a plurality of ions; passing the ions through the ion beam generator; transferring the ions into the soft-landing chamber; passing the ions through the Wien filter; applying a first electric field from a first electric field source, a second electric field from a second electric field source, and a magnetic field from a magnetic field source to the ions in the Wien filter, wherein the first electric field is substantially orthogonal to the magnetic field, and the second electric field is substantially parallel to the magnetic field; and depositing the ions onto a surface.

37. The method of claim 36, wherein the ion beam generator comprises an ion funnel having an inlet and an outlet, an ion guide coupled to the outlet of the ion funnel, and a focusing lens coupled to the soft-landing chamber, and wherein the step of passing the ions through the ion beam generating device comprises transferring the ions into the ion funnel; passing the ions through the ion guide; and focusing the ions with the focusing lens.

38. The method of claim 37, wherein the first electric field source comprises a first signal source coupled to a transverse first electrode set, and the second electric field source comprises a second signal source coupled to a transverse second electrode set.

39. The method of claim 38, wherein the magnetic field source comprises a transverse magnet set.

40. The method of claim 39, wherein the first electric field is a static electric field or a dynamic electric field.

41. The method of claim 40, wherein the first electric field is a static electric field, and the first signal source is configured to provide a constant voltage to the first electrode set.

42. The method of claim 41 , wherein the second electric field is a dynamic electric field.

43. The method of claim 42, wherein the second signal source is configured to provide a signal having a sinusoidal waveform, a triangular waveform, or a square waveform to the second electrode set.

44. The method of claim 40, wherein each of the first electric field and the second electric field is a dynamic electric field.

45. The method of claim 44, wherein each of the first signal source and the second signal source is configured to independently provide a signal having a user-defined waveform to the first electrode set and the second electrode set.

46. The method of claim 37, wherein the focusing lens comprises an einzel lens.

47. The method of claim 37, wherein the ion funnel comprises a first ion funnel and a second ion funnel, wherein the first ion funnel operates at a higher pressure than the second ion funnel.

48. The method of claim 36, wherein the plurality of ions comprises a plurality of mass-to-charge (m / z) species.

49. The method of claim 48, wherein the step of depositing comprises simultaneously depositing the m / z species.

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