Atomization core, atomizer, and electronic atomization apparatus

Abstract

An atomization core (10), an atomizer (100), and an electronic atomization apparatus. The atomization core (10) comprises a thermally conductive substrate (1), a semiconductor heating layer (2), and electrodes (3). The semiconductor heating layer (2) is arranged on a surface of the thermally conductive substrate (1). The electrodes (3) are arranged on the surface of the thermally conductive substrate (1) provided with the semiconductor heating layer (2), and are electrically connected to the semiconductor heating layer (2). The atomization core (10) is provided with a plurality of first liquid-guiding through-holes (4) passing through the thermally conductive substrate (1) and the semiconductor heating layer (2). The plurality of first liquid-guiding through-holes (4) are arranged in a two-dimensional array, and the first liquid-guiding through-holes (4) in adjacent rows or adjacent columns are arranged in a staggered manner. The atomization core (10) can effectively improve atomization performance and has a prolonged service life.

Description

Atomization core, atomizer and electronic atomization device

[0001] Cross-reference to related applications

[0002] The present application claims priority from Chinese Patent Application No. 2024222558974 filed on September 12, 2024, the disclosure of which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

[0003] The present application relates to the technical field of electronic atomization, and in particular to an atomization core, an atomizer and an electronic atomization device.

BACKGROUND

[0004] The atomization core generally comprises a heating element and a liquid guiding element.

[0005] The conventional atomization core forms the heating element by making a patterned metal film on the liquid guiding element. The low heating efficiency of the metal leads to insufficient utilization of the heating surface, resulting in unsatisfactory atomization effect and problems such as insufficient atomization and uneven heating. Long-term use may cause performance degradation and shorten the service life of the atomization core.

SUMMARY

[0006] The technical problem solved by the present application is how to improve the atomization effect of the atomizer and prolong the service life of the atomization core.

[0007] To solve the above technical problem, one technical solution adopted by the present application is to provide an atomization core comprising a heat-conducting substrate, a semiconductor heating layer and an electrode. The semiconductor heating layer is arranged on one surface of the heat-conducting substrate. The surface of the heat-conducting substrate on which the semiconductor heating layer is arranged is electrically connected to the semiconductor heating layer. The atomization core has a plurality of first flow guiding through holes penetrating through the heat-conducting substrate and the semiconductor heating layer. The plurality of first flow guiding through holes are arranged in a two-dimensional array, and the first flow guiding through holes in adjacent rows or adjacent columns are arranged in a staggered manner.

[0008] In one specific embodiment, the diameter of the first flow guiding through hole is greater than or equal to 10 microns and less than or equal to 50 microns, and the distance between two adjacent first flow guiding through holes is greater than or equal to 10 microns and less than or equal to 50 microns.

[0009] In one specific embodiment, the first flow guiding through hole is a circular hole or a regular polygonal hole, and the distance between two adjacent first flow guiding through holes is less than the diameter of the first flow guiding through hole.

[0010] In one specific embodiment, the semiconductor heating layer is a conductive silicon wafer, and the first flow guiding through hole penetrates through the conductive silicon wafer.

[0011] In one embodiment, the surface of the semiconductor heating layer is flush with the surface of the heat-conductive substrate, the electrode is formed on the surface of the heat-conductive substrate, and at least partially covers the semiconductor heating layer.

[0012] In one embodiment, the heat-conductive substrate is an intrinsic semiconductor substrate; the semiconductor heating layer is formed by local doping on the atomized surface of the intrinsic semiconductor substrate; and the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor.

[0013] In one embodiment, the device further comprises a liquid-conducting substrate; the liquid-conducting substrate is arranged on the surface of the heat-conductive substrate away from the semiconductor heating layer, and has a plurality of second flow-through holes arranged in a two-dimensional array; the second flow-through holes in adjacent rows or adjacent columns are also arranged in a staggered manner; each second flow-through hole in the same row is arranged corresponding to the gap between the adjacent two first flow-through holes in the same row, and each second flow-through hole in the same column is arranged corresponding to the gap between the adjacent two first flow-through holes in the same column; the surface of the heat-conductive substrate close to the liquid-conducting substrate and / or the surface of the liquid-conducting substrate close to the heat-conductive substrate is provided with a groove; and the plurality of first flow-through holes are communicated with the plurality of second flow-through holes through the groove.

[0014] In one embodiment, the heat-conductive substrate is a silicon substrate; and / or the liquid-conducting substrate is a glass substrate or a ceramic substrate.

[0015] To solve the above technical problems, another technical solution adopted by the present application is to provide an atomizer comprising a liquid storage cavity and an atomizing core as described in any of the above embodiments; the liquid storage cavity is used for storing an atomization substrate, and is communicated with the atomizing core.

[0016] To solve the above technical problems, another technical solution adopted by the present application is to provide an electronic atomization device comprising an atomizer as described above.

[0017] The beneficial effects of the embodiments of the present application are as follows: Different from the prior art, the present application provides an atomizing core, an atomizer and an electronic atomization device, the atomizing core comprising a heat-conductive substrate, a semiconductor heating layer and an electrode. The semiconductor heating layer is arranged on one surface of the heat-conductive substrate; the electrode is arranged on the surface of the heat-conductive substrate provided with the semiconductor heating layer, and is electrically connected with the semiconductor heating layer; the atomizing core has a plurality of first flow-through holes penetrating through the heat-conductive substrate and the semiconductor heating layer; the plurality of first flow-through holes are arranged in a two-dimensional array, and the first flow-through holes in adjacent rows or adjacent columns are arranged in a staggered manner. By arranging the first flow-through holes in the atomizing core in a staggered manner, the distance between two adjacent first flow-through holes is reduced, so that more first flow-through holes can be provided in the atomizing core under the same size, the opening rate of the atomizing core is improved, the utilization efficiency of the heating surface is improved, and the atomization efficiency of the atomizing core is effectively improved. BRIEF DESCRIPTION OF DRAWINGS

[0018] Fig. 1 is a structural schematic diagram of an atomizing core according to an embodiment of the present application;

[0019] Fig. 2A is a top view of the atomizing core shown in Fig. 1;

[0020] Fig. 2B is a top view of an atomizing core according to another embodiment of the present application;

[0021] Fig. 2C is a top view of an atomizing core according to yet another embodiment of the present application;

[0022] Fig. 3 is an enlarged view of A in Fig. 2A;

[0023] Fig. 4 is an exploded schematic diagram of the atomizing core shown in Fig. 1;

[0024] Fig. 5 is a sectional view of the heat-conducting substrate in Fig. 4 along line B-B;

[0025] Fig. 6 is an enlarged view of a top view of an atomizing core according to a second embodiment of the present application;

[0026] Fig. 7 is an enlarged view of a top view of an atomizing core according to a third embodiment of the present application;

[0027] Fig. 8 is a structural schematic diagram of an atomizer according to an embodiment of the present application;

[0028] Fig. 9 is a structural schematic diagram of an electronic atomizing device according to an embodiment of the present application.

[0029] BRIEF DESCRIPTION OF DRAWINGS 100-atomizing core; 200-battery assembly; 10-atomizing core; 20-liquid storage cavity; 1-heat-conducting substrate; 2-semiconductor heating layer; 3-electrode; 4-first flow- conducting through hole; 5-liquid-conducting substrate; 11-sink; 12-groove; 21- conductive silicon sheet; 51-second flow-conducting through hole. DETAILED DESCRIPTION

[0030] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative effort belong to the scope of protection of the present application.

[0031] The terms "first", "second", "third", etc. in the present application are only for descriptive purpose, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", "third" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications also change accordingly. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0032] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive or alternative embodiments. It is expressly understood that the embodiments described herein are combinable with each other.

[0033] The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0034] The embodiments of the present application provide an atomization core which can be used to convert an atomization substrate into an aerosol. The atomization core provided by the embodiments of the present application can be a micro-electro-mechanical system (MEMS) based heater. MEMS is based on microelectronics, micromechanics and material science, and studies, designs and manufactures micro devices with specific functions, including micro structure devices, micro sensors, micro actuators, micro mechanical optical devices and micro systems. The MEMS processing technology is developed on the basis of traditional microelectronic processing technology (also known as integrated circuit IC technology), and some unique technologies for manufacturing micro machines are developed later. These unique technologies and conventional integrated circuit technology are combined to realize MEMS, and these technologies are collectively referred to as micro mechanical processing technology. The atomization core material based on the MEMS process is harmless to the human body, the smoke generated by the atomization device is delicate and not dry, and the atomization core structure is compact and has good batch production consistency.

[0035] Referring to FIGS. 1-3, FIG. 1 is a structural schematic diagram of an atomizing core provided by a first embodiment of the present application; FIG. 2A is a top view of the atomizing core shown in FIG. 1; FIG. 2B is a top view of an atomizing core provided by another embodiment of the present application; FIG. 2C is a top view of an atomizing core provided by yet another embodiment of the present application; and FIG. 3 is a partial enlarged view of A in FIG. 2A. The atomizing core provided by the first embodiment of the present application can include a heat-conducting substrate 1, a semiconductor heating layer 2, and an electrode 3. The heat-conducting substrate 1 can be a silicon substrate made of single crystal silicon. The semiconductor heating layer 2 is arranged on one side surface of the heat-conducting substrate 1 and is used to atomize an atomizing medium into aerosol; and the resistivity of the semiconductor heating layer 2 is less than the resistivity of the heat-conducting substrate 1, so that the semiconductor heating layer 2 can conduct electricity and generate heat when electrified.

[0036] The electrode 3 is arranged on the surface of the heat-conducting substrate 1 on which the semiconductor heating layer 2 is arranged and is electrically connected to both ends of the semiconductor heating layer 2, so as to apply a voltage to the semiconductor heating layer 2 through the electrode 3 to make the semiconductor heating layer 2 generate heat. Specifically, the electrode 3 can cover part of the surface of the heat-conducting substrate 1 and part of the surface of the semiconductor heating layer 2.

[0037] The atomizing core has a plurality of first flow-through holes 4 penetrating through the heat-conducting substrate 1 and the semiconductor heating layer 2. As shown in FIG. 2A, the plurality of first flow-through holes 4 are arranged in a two-dimensional array on the atomizing core, and the first flow-through holes 4 in adjacent rows or adjacent columns are arranged in a staggered manner. The first flow-through holes 4 are used to transmit the atomizing medium on the side surface of the heat-conducting substrate 1 away from the semiconductor heating layer 2 to the semiconductor heating layer 2, so as to heat the atomizing medium by the semiconductor heating layer 2.

[0038] In this way, by arranging the first flow-through holes 4 in the atomizing core in a staggered manner, the distance between two adjacent first flow-through holes 4 is reduced, so that more first flow-through holes 4 can be provided in the atomizing core under the same size, the opening rate of the atomizing core is improved, the utilization efficiency of the heating surface is improved, and thus the atomization efficiency of the atomizing core is effectively improved.

[0039] Specifically, taking the example of arranging the first flow-through holes 4 in adjacent rows in a staggered manner, in the first flow-through holes 4 in the adjacent two rows, each first flow-through hole 4 can be located on the perpendicular bisector of the line connecting the centers of two adjacent first flow-through holes 4 in the adjacent rows; that is, each first flow-through hole 4 and the two adjacent first flow-through holes 4 in the adjacent rows can be located on the three vertices of an isosceles triangle.

[0040] It can be understood that if the pore size of the first flow guide through hole 4 is too small, its transmission capacity to the atomized substrate is weak, which may not meet the demand of the working efficiency of the atomizing core; if the pore size of the first flow guide through hole 4 is too large, it may affect the capillary action of the first flow guide through hole 4, so that it cannot transmit the atomized substrate. As shown in FIG. 3, in specific embodiments, the pore size a of the first flow guide through hole 4 is greater than or equal to 10 microns and less than or equal to 50 microns, so as to ensure that the first flow guide through hole 4 can transmit enough atomized substrate for the semiconductor heating layer to atomize, while preventing liquid leakage due to the pore size of the first flow guide through hole 4 being too large. Specifically, the pore size a of the first flow guide through hole 4 can be any of 10 microns, 20 microns, 30 microns, 40 microns or 50 microns.

[0041] Further, the distance b between the two adjacent first flow guide through holes 4 is less than the pore size a of the first flow guide through hole 4; specifically, the distance b between the two adjacent first flow guide through holes 4 is greater than or equal to 10 microns and less than or equal to 50 microns; so as to reduce the distance between the two adjacent first flow guide through holes 4 while ensuring the structural strength of the atomizing core, so that more first flow guide through holes 4 can be provided in the atomizing core under the same size, thereby improving the opening rate of the atomizing core, and thus improving the utilization efficiency of the heating surface, and further effectively improving the atomization efficiency of the atomizing core. Specifically, the distance b between the two adjacent first flow guide through holes 4 can be any of 10 microns, 20 microns, 30 microns, 40 microns or 50 microns. It should be noted that the two adjacent first flow guide through holes 4 can be two first flow guide through holes 4 adjacent in the same row or the same column, or can be the two closest first flow guide through holes 4 located in adjacent two rows or two columns.

[0042] Referring to FIGS. 2A-2C, in some embodiments, the first flow guide through hole 4 can be a circular hole, and the two adjacent rows of first flow guide through holes 4 are arranged in a staggered manner (as shown in FIG. 2A); or the two adjacent columns of first flow guide through holes 4 are arranged in a staggered manner (as shown in FIG. 2B).

[0043] In other embodiments, the first flow guide through hole 4 can also be a regular polygon hole (as shown in FIG. 2C); wherein the two adjacent rows or two adjacent columns of regular polygon holes are arranged in a staggered manner, and the distance between the two adjacent regular polygon holes is equal, so that the plurality of regular polygon holes are densely arranged on the atomizing core. Exemplarily, the regular polygon hole can be a regular hexagonal hole.

[0044] The atomization efficiency of the atomizing core in the above embodiments is tested and compared with that of the atomizing core without staggered arrangement, and the results are as follows:

[0045] Comparative Examples 1 and 2 are atomizing cores in which the first flow guide through holes 4 are not staggered; Example 1A and 1B are atomizing cores in which the first flow guide through holes 4 are circular and the first flow guide through holes 4 in adjacent rows are staggered; Example 2A and 2B are atomizing cores in which the first flow guide through holes 4 are circular and the first flow guide through holes 4 in adjacent columns are staggered; and Example 3A and 3B are atomizing cores in which the first flow guide through holes 4 are hexagonal and the first flow guide through holes 4 in adjacent columns are staggered. As can be seen from the test results, compared to the atomizing cores in which the first flow guide through holes 4 are not staggered, the atomizing efficiency of the atomizing cores in which the first flow guide through holes 4 are staggered is greatly improved.

[0046] Referring to FIG. 4, which is an exploded schematic view of the atomizing core shown in FIG. 1, in specific embodiments, a sink 11 is formed on the atomizing surface of the heat-conducting substrate 1 near the side of the semiconductor heat-generating layer 2. The sink 11 extends from the atomizing surface of the heat-conducting substrate 1 in a direction perpendicular to the stacking direction Z of the heat-conducting substrate 1, away from the semiconductor heat-generating layer 2. The sink 11 can be used to accommodate the semiconductor heat-generating layer 2, so as to reduce the thickness of the atomizing core, and facilitate miniaturization of the atomizing core.

[0047] The semiconductor heat-generating layer 2 can be a conductive silicon wafer 21, which can be made of monocrystalline silicon material. The conductive silicon wafer 21 is embedded in the sink 11 and is in contact with the bottom wall of the sink 11. The first flow guide through holes pass through the conductive silicon wafer 21, so that the atomizing substrate can be transmitted to the conductive silicon wafer 21, and the contact area between the atomizing substrate and the conductive silicon wafer 21 is increased, thereby improving the atomizing efficiency.

[0048] The surface of the semiconductor heat-generating layer 2 is flush with the surface of the heat-conducting substrate 1, and the electrode 3 is formed on the surface of the heat-conducting substrate 1 and covers at least part of the semiconductor heat-generating layer 2. Specifically, the depth of the sink 11 is equal to the thickness of the conductive silicon wafer 21, so that the surface of the conductive silicon wafer 21 away from the bottom wall is flush with the surface of the heat-conducting substrate 1, so as to facilitate the electrode 3 covering the heat-conducting substrate 1 and the conductive silicon wafer 21. Further, there is a gap between the side surface of the sink 11 and the side surface of the conductive silicon wafer 21, and the gap is filled with a bonding material, so as to fix the conductive silicon wafer 21 in the sink 11, and avoid the conductive silicon wafer 21 falling off the heat-conducting substrate 1 during use.

[0049] Referring to FIG. 5, which is a sectional view of the heat-conducting substrate in FIG. 4 along line B-B, further, the two ends of the sink 11 along the first direction Y can be open, so as to facilitate embedding of the conductive silicon wafer 21. The shape and size of the conductive silicon wafer 21 are adapted to the shape and size of the sink 11, so that the conductive silicon wafer 21 is tightly bonded to the heat-conducting substrate 1.

[0050] Specifically, the number of the electrodes 3 is two, and the electrodes 3 are arranged on opposite sides of the atomization surface along the second direction X; wherein, a part of each electrode 3 is arranged on the surface of the heat-conducting substrate 1 to fix the electrode 3 on the heat-conducting substrate 1; and another part of the electrode 3 is arranged on the surface of the non-punch area of the conductive silicon sheet 21 to apply voltage to the conductive silicon sheet 21.

[0051] The first flow guide through hole 4 is only arranged in the area of the sink 11 to avoid the situation that the electrode 3 covers the first flow guide through hole 4.

[0052] As shown in FIG. 1, in some embodiments, the atomization core can further include a liquid guide substrate 5; the liquid guide substrate 5 is arranged on the surface of the heat-conducting substrate 1 away from the semiconductor heating layer 2, and the liquid guide substrate 5 has a plurality of second flow guide through holes 51 corresponding to the plurality of first flow guide through holes 4, and the second flow guide through holes 51 are used to transmit the atomization substrate on the side of the liquid guide substrate 5 away from the heat-conducting substrate 1 to the first flow guide through hole 4. That is, the atomization substrate can be transmitted from the side of the liquid guide substrate 5 away from the heat-conducting substrate 1 to the semiconductor heating layer 2 through the second flow guide through hole 51 and the first flow guide through hole 4, so as to realize the liquid supply and atomization of the atomization substrate. It can be understood that the liquid guide substrate 5 and the second flow guide through hole 51 arranged in the liquid guide substrate 5 can increase the liquid storage capacity of the atomization core, and is beneficial to the atomization of the atomization substrate. The material of the liquid guide substrate 5 can be one of a glass substrate or a ceramic substrate.

[0053] Specifically, the plurality of second flow guide through holes 51 are arranged in a two-dimensional array on the liquid guide substrate 5; the second flow guide through holes 51 in adjacent rows or adjacent columns can also be arranged in a staggered manner, and the second flow guide through holes 51 can be coaxially arranged with the corresponding first flow guide through holes 4, so as to facilitate the punching of the heat-conducting substrate 1 and the liquid guide substrate 5.

[0054] In some embodiments, the heat-conducting substrate 1 can also be an intrinsic semiconductor substrate; the intrinsic semiconductor substrate can be a single crystal silicon substrate. The semiconductor heating layer 2 is formed on the atomization surface of the intrinsic semiconductor substrate by locally doping conductive ions on the atomization surface of the intrinsic semiconductor substrate; so that the semiconductor heating layer 2 can be made thin, and the thickness of the semiconductor heating layer 2 is less than or equal to 10 microns, so as to further reduce the thickness of the atomization core. The thickness of the semiconductor heating layer 2 is less than the thickness of the intrinsic semiconductor.

[0055] Referring to FIG. 6, which is a partial enlarged view of a top view of the atomizing core provided by the second embodiment of the present application; the structure of the atomizing core provided by the second embodiment of the present application is basically the same as that of the atomizing core provided by the first embodiment of the present application, the difference being that in the second embodiment, each second flow guide through hole 51 in the same row is arranged corresponding to the gap between the adjacent two first flow guide through holes 4 in the same row, and each second flow guide through hole 51 in the same column is arranged corresponding to the gap between the adjacent two first flow guide through holes 4 in the same column; so that the bubbles generated by the semiconductor heating layer 2 heating the atomizing substrate can be blocked on the bonding surface of the heat-conducting substrate 1 and the liquid-conducting substrate 5, avoiding the bubbles from entering the second flow guide through hole 51, thus preventing the second flow guide through hole 51 from being blocked, and keeping the liquid supply smooth and stable, effectively avoiding the dry burning of the atomizing core.

[0056] Specifically, the projection of the second flow guide through hole 51 on the heat-conducting substrate 1 along the stacking direction Z only partially overlaps with the projection of the corresponding first flow guide through hole 4 on the heat-conducting substrate 1 along the stacking direction Z, so as to reduce the overlapping area of the first flow guide through hole 4 and the corresponding second flow guide through hole 51, and avoid the bubbles from directly entering the second flow guide through hole 51 from the first flow guide through hole 4.

[0057] Further, referring to FIG. 7, which is a partial enlarged view of a top view of the atomizing core provided by the third embodiment of the present application; the structure of the atomizing core provided by the third embodiment of the present application is basically the same as that of the atomizing core provided by the second embodiment of the present application, the difference being that in the third embodiment, the surface of the heat-conducting substrate 1 close to the liquid-conducting substrate 5 and / or the surface of the liquid-conducting substrate 5 close to the heat-conducting substrate 1 is provided with a groove 12; a plurality of first flow guide through holes 4 are communicated with a plurality of corresponding second flow guide through holes 51 through the groove 12, so that the bubbles can be discharged from the atomizing core through the groove 12, thus avoiding the bubbles from gathering on the bonding surface of the heat-conducting substrate 1 and the liquid-conducting substrate 5 and blocking the liquid supply channel; so as to ensure the stable liquid supply and avoid the dry burning of the atomizing core.

[0058] Specifically, the groove 12 can be arranged on the side surface of the heat-conducting substrate 1 facing the liquid-conducting substrate 5, and extends from the side surface of the heat-conducting substrate 1 facing the liquid-conducting substrate 5 to the direction close to the semiconductor heating layer 2; and extends to at least one side of the plurality of first flow guide through holes 4 along the second direction X. The heat-conducting substrate 1 can have a plurality of grooves 12 arranged at intervals along the first direction Y, each groove 12 being communicated with a plurality of rows of first flow guide through holes 4 and a plurality of corresponding second flow guide through holes 51, and the bubbles in the plurality of rows of first flow guide through holes 4 can be transferred into the corresponding grooves 12. For example, the projection of the second flow guide through hole 51 on the heat-conducting substrate 1 along the stacking direction Z can also be completely non-overlapping with the projection of the corresponding first flow guide through hole 4 on the heat-conducting substrate 1 along the stacking direction Z.

[0059] The application provides an atomizing core, which comprises a heat-conducting substrate 1, a semiconductor heating layer 2 and an electrode 3. The semiconductor heating layer 2 is arranged on one surface of the heat-conducting substrate 1; the electrode 3 is arranged on the surface of the heat-conducting substrate 1 provided with the semiconductor heating layer 2 and is electrically connected with the semiconductor heating layer 2; wherein the atomizing core has a plurality of first flow guide through holes 4 penetrating through the heat-conducting substrate 1 and the semiconductor heating layer 2; the plurality of first flow guide through holes 4 are arranged in a two-dimensional array, and the first flow guide through holes 4 in adjacent rows or adjacent columns are arranged in a staggered manner. The first flow guide through holes 4 in the atomizing core are arranged in a staggered manner, so as to reduce the distance between two adjacent first flow guide through holes 4, so that more first flow guide through holes 4 can be provided in the atomizing core under the same size, the opening rate of the atomizing core is improved, the utilization efficiency of the heating surface is improved, and the atomizing efficiency of the atomizing core is effectively improved.

[0060] Referring to FIG. 8, FIG. 8 is a structural schematic diagram of an atomizer provided in an embodiment of the application. The application provides an atomizer 100. The atomizer 100 comprises a liquid storage cavity 20 and the atomizing core 10 described above.

[0061] The liquid storage cavity 20 is used for storing an atomization substrate and is in communication with the atomizing core 10. The liquid storage cavity 20 is in communication with the first flow guide through hole 4.

[0062] In the embodiment, the atomizing core 10 is arranged below the liquid storage cavity 20 and is horizontally arranged.

[0063] The atomizing core 10 can also be vertically arranged or arranged in an inclined manner. For example, the atomizing core 10 can be arranged at an angle with a horizontal plane or can also be arranged at an angle with the circumference of the atomizer 100. That is, the application does not limit the arrangement angle of the atomizing core 10.

[0064] In other embodiments, the atomizing core 10 can also be arranged on the side surface of the liquid storage cavity 20 and can also be partially embedded in the liquid storage cavity 20. That is, the atomizing core 10 and the liquid storage cavity 20 can also be arranged in other manners, which are not limited herein and can be selected according to actual assembly requirements.

[0065] Referring to FIG. 9, FIG. 9 is a structural schematic diagram of an electronic atomizing device provided in an embodiment of the application. The application provides an electronic atomizing device. The electronic atomizing device comprises a battery assembly 200 and the atomizer 100 described above. The battery assembly 200 is used for supplying power to the atomizer 100 so as to work. The battery assembly 200 is electrically connected with the electrode, so as to form a path for the electrode and the semiconductor heating layer, so that the semiconductor heating layer generates Joule heat as a resistor.

[0066] The electronic atomization device can also include a shell, a suction nozzle, a microphone, and other structures, which will not be described in detail here. Detailed structural features of the electronic atomization device are within the understanding of those skilled in the art and will not be described here. The structure of the electronic atomization device can be various structures and forms, as long as the atomization core structure in the embodiments of the present application is used, which should be included in the protection scope of the present application.

Claims

1. An atomizing core, wherein, The atomizing core comprises: a heat-conducting substrate; a semiconductor heating layer arranged on one surface of the heat-conducting substrate; an electrode arranged on the surface of the heat-conducting substrate provided with the semiconductor heating layer and electrically connected with the semiconductor heating layer. The atomizing core has a plurality of first flow guide through holes penetrating the heat-conducting substrate and the semiconductor heating layer; the plurality of first flow guide through holes are arranged in a two-dimensional array, and the first flow guide through holes in adjacent rows or adjacent columns are arranged in a staggered manner.

2. The atomizing core according to claim 1, wherein the diameter of the first flow guide through hole is greater than or equal to 10 microns and less than or equal to 50 microns; and the distance between two adjacent first flow guide through holes is greater than or equal to 10 microns and less than or equal to 50 microns.

3. The atomizing core according to claim 2, wherein the first flow guide through hole is a circular hole or a regular polygonal hole, and the distance between two adjacent first flow guide through holes is less than the diameter of the first flow guide through hole.

4. The atomizer wick of any of claims 1-3, wherein, The semiconductor heating layer is a conductive silicon sheet, and the first flow guide through hole penetrates the conductive silicon sheet.

5. The atomizer wick of claim 4, wherein, The surface of the semiconductor heating layer is flush with the surface of the heat-conducting substrate, the electrode is formed on the surface of the heat-conducting substrate, and at least partially covers the semiconductor heating layer.

6. The atomizer wick of any of claims 1-5, wherein, The heat-conducting substrate is an intrinsic semiconductor substrate; the semiconductor heating layer is formed by local doping on the atomizing surface of the intrinsic semiconductor substrate; and the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor.

7. The atomizer wick of any of claims 1-6, wherein, Further comprising: a liquid-conducting substrate arranged on the surface of the heat-conducting substrate away from the semiconductor heating layer and having a plurality of second flow guide through holes arranged in a two-dimensional array; the second flow guide through holes in adjacent rows or adjacent columns are also arranged in a staggered manner, each second flow guide through hole in the same row corresponds to the gap between two adjacent first flow guide through holes in the same row, and each second flow guide through hole in the same column corresponds to the gap between two adjacent first flow guide through holes in the same column; the surface of the heat-conducting substrate close to the liquid-conducting substrate and / or the surface of the liquid-conducting substrate close to the heat-conducting substrate is provided with a groove; and the plurality of first flow guide through holes communicate with the plurality of second flow guide through holes through the groove.

8. The atomizing core according to claim 7, wherein the heat-conducting substrate is a silicon substrate; and / or the liquid-conducting substrate is a glass substrate or a ceramic substrate.

9. An atomiser, wherein, The atomizer comprises the atomizing core according to any one of claims 1-8. The liquid storage cavity is used for storing an atomized substrate and communicates with the atomizing core.

10. An electronic atomizing device, wherein, The atomizer comprises the atomizer according to claim 9.

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