Substrate for transferring semiconductor light-emitting elements and method for producing same

Abstract

A substrate for transferring semiconductor light-emitting elements according to an embodiment may comprise: a substrate; a partition wall, on the substrate, having assembly holes by which semiconductor light-emitting elements are assembled; and anti-suction patterns disposed in the assembly holes.

Description

Transfer substrate for semiconductor light-emitting devices and method for manufacturing the same

[0001] The embodiment relates to a transfer substrate for a semiconductor light-emitting device and a method for manufacturing the same.

[0002] Large-area displays include liquid crystal displays (LCDs), OLED displays, and micro-LED displays. A micro-LED display is a display that uses micro-LEDs, which are semiconductor light-emitting devices with a diameter or cross-sectional area of ​​100㎛ or less, as display elements. Because micro-LED displays use micro-LEDs, which are semiconductor light-emitting devices, as display elements, they have excellent performance in many characteristics such as contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance.

[0003] In particular, Micro LED displays have the advantage of being able to freely adjust size or resolution by separating and combining screens in a modular manner, and also have the advantage of enabling the implementation of flexible displays.

[0004] Recently developed transfer technologies include the pick-and-place process, the laser lift-off method, and the self-assembly method.

[0005] Among these, the pick-and-place method enables the simultaneous assembly of ultra-small micro LED chips by transferring micro LED chips onto an RGB lighting substrate through three pick-and-place processes.

[0006] However, when using a stamp to pick up the second or third LED chip after picking up the first LED chip, a phenomenon occurs where the LED chip picked up by the stamp adheres to the assembly board where the LED chip to be picked up is assembled.

[0007] To solve the above problem, the embodiment aims to provide a transfer substrate for a semiconductor light-emitting device and a method for manufacturing the same, which prevents a picked-up LED chip from adsorbing onto an assembly substrate on which an LED chip to be picked up is assembled.

[0008] To achieve the above objective, a transfer substrate for a semiconductor light-emitting element according to an embodiment may include a substrate comprising a region where a first semiconductor light-emitting element is assembled and an outer region, a partition wall comprising a recess that accommodates a second semiconductor light-emitting element picked up by a stamp in the outer region of the substrate, and an adsorption prevention pattern disposed within the recess.

[0009] The above anti-adsorption pattern may include a first irregular pattern formed on the substrate exposed through the recess.

[0010] The above anti-adsorption pattern may include a first hole pattern that penetrates the substrate exposed through the recess from top to bottom.

[0011] It may further include a dielectric film formed on the above substrate.

[0012] The above anti-adsorption pattern may include a second irregular pattern formed on the dielectric film exposed through the recess.

[0013] The above anti-adsorption pattern may include a second hole pattern that penetrates vertically through the dielectric film exposed through the recess.

[0014] The above anti-adsorption pattern may include a third irregular pattern formed on the substrate exposed through the second hole pattern.

[0015] In addition, to achieve the above objective, a method for manufacturing a transfer substrate for a semiconductor light-emitting element according to an embodiment may include the steps of forming a partition wall including a recess for accommodating a second semiconductor light-emitting element picked up by a stamp in an outer region of the substrate, and forming an adsorption prevention pattern within the recess.

[0016] The adsorption prevention pattern can be formed by forming a first irregular pattern on the substrate exposed through the recess.

[0017] The anti-adsorption pattern can be formed by forming a first hole pattern that penetrates the substrate exposed through the above recess vertically.

[0018] The method may further include the step of forming a dielectric film on the substrate.

[0019] The adsorption prevention pattern can be formed by forming a second irregular pattern on the dielectric film exposed through the above recess.

[0020] The adsorption prevention pattern can be formed by forming a second hole pattern that penetrates vertically through the dielectric film exposed through the above recess.

[0021] The adsorption prevention pattern can be formed by forming a third irregular pattern on the substrate exposed through the second hole pattern.

[0022] The embodiment can prevent a pre-picked semiconductor light-emitting element from adsorbing onto an assembly substrate by forming an anti-adsorption pattern in an area where the semiconductor light-emitting element is mounted.

[0023] In addition, the embodiment has the effect of facilitating the simultaneous assembly and transfer of RGB onto a panel substrate.

[0024] FIG. 1 is an exemplary diagram of a living room of a house in which a display device according to an embodiment is placed.

[0025] Figure 2 is an enlarged view of the first panel area of ​​the display device of Figure 1.

[0026] Figure 3 is a cross-sectional view along the line B1-B2 in area B of Figure 2.

[0027] FIG. 4 is an example diagram showing how a light-emitting element according to an embodiment is assembled onto an assembly substrate by a self-assembly method.

[0028] FIG. 5 is a plan view showing a first assembly substrate for transferring a semiconductor light-emitting device according to an embodiment.

[0029] Figure 6 is a cross-sectional view of AA of Figure 5.

[0030] FIG. 7 is a plan view showing a second assembly substrate for transfer of a semiconductor light-emitting device according to an embodiment.

[0031] Figure 8 is a cross-sectional view of the BB in Figure 7.

[0032] FIG. 9 is a plan view showing a third assembly substrate for transfer of a semiconductor light-emitting device according to an embodiment.

[0033] Figure 10 is a cross-sectional view of the CC section of Figure 9.

[0034] FIG. 11 is a cross-sectional view showing a second assembly substrate for transfer of a semiconductor light-emitting device according to a second embodiment.

[0035] FIG. 12 is a cross-sectional view showing a second assembly substrate for transfer of a semiconductor light-emitting device according to a third embodiment.

[0036] FIG. 13 is a flowchart showing a method for manufacturing a transfer substrate of a semiconductor light-emitting device according to an embodiment.

[0037] FIGS. 14 to 18 are cross-sectional views illustrating a method for manufacturing a transfer substrate of a semiconductor light-emitting device according to an embodiment.

[0038] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings. The suffixes 'module' and 'part' for components used in the following description are assigned or used interchangeably for the sake of ease of drafting the specification and do not inherently possess distinct meanings or roles. Furthermore, the attached drawings are intended to facilitate an easy understanding of the embodiments disclosed in this specification, and the technical concepts disclosed in this specification are not limited by the attached drawings. Additionally, when an element such as a layer, region, or substrate is referred to as existing 'on' another component, this includes existing directly on the other element or having other intermediate elements existing between them.

[0039] The display devices described in this specification may include digital TVs, mobile phones, smartphones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation systems, slate PCs, tablet PCs, ultrabooks, desktop computers, etc. However, the configurations according to the embodiments described in this specification may be applied to devices capable of display, even if they are new product forms developed in the future.

[0040] A light-emitting element according to the following embodiments and a display device including the same will be described.

[0041] FIG. 1 illustrates a living room of a house in which a display device (100) according to an embodiment is placed.

[0042] The display device (100) of the embodiment can display the status of various electronic products such as a washing machine (101), a robot vacuum cleaner (102), and an air purifier (103), communicate with each electronic product based on IoT, and control each electronic product based on user setting data.

[0043] The display device (100) according to the embodiment may include a flexible display fabricated on a thin and flexible substrate. The flexible display can be bent or rolled like paper while maintaining the characteristics of a conventional flat panel display.

[0044] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels arranged in a matrix form. A unit pixel refers to the smallest unit for realizing a single color. The unit pixels of a flexible display can be realized by a light-emitting element. In the embodiments, the light-emitting element may be a Micro-LED or a Nano-LED, but is not limited thereto.

[0045] Figure 2 is an enlarged view of the first panel area (A) of the display device of Figure 1.

[0046] According to FIG. 2, the display device (100) of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel regions, such as a first panel region (A), by tiling.

[0047] The first panel area (A) may include a plurality of light-emitting elements (150) arranged for each unit pixel (PX in FIG. 2).

[0048] For example, a unit pixel (PX) may include a first sub-pixel (PX1), a second sub-pixel (PX2), and a third sub-pixel (PX3). For example, a plurality of red light-emitting elements (150R) may be placed in the first sub-pixel (PX1), a plurality of green light-emitting elements (150G) may be placed in the second sub-pixel (PX2), and a plurality of blue light-emitting elements (150B) may be placed in the third sub-pixel (PX3). The unit pixel (PX) may further include a fourth sub-pixel in which no light-emitting elements are placed, but is not limited thereto. Meanwhile, the light-emitting element (150) may be a semiconductor light-emitting element.

[0049] Next, Fig. 3 is a cross-sectional view along the line B1-B2 in area B of Fig. 2.

[0050] Referring to FIG. 3, the display device (100) of the embodiment may include a substrate (200), assembly wiring (201, 202), a first insulating layer (211a), a second insulating layer (211b), a third insulating layer (206), and a plurality of light-emitting elements (150).

[0051] The assembly wiring may include a first assembly wiring (201) and a second assembly wiring (202) spaced apart from each other. The first assembly wiring (201) and the second assembly wiring (202) may be provided to generate a dielectrophoretic force to assemble a light-emitting element (150). Additionally, the first assembly wiring (201) and the second assembly wiring (202) may be electrically connected to the electrodes of the light-emitting element and function as electrodes of a display panel.

[0052] The assembled wiring (201, 202) may be formed of a transparent electrode (ITO) or may include a metallic material with excellent electrical conductivity. For example, the assembled wiring (201, 202) may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0053] A first insulating layer (211a) may be disposed between the first assembled wiring (201) and the second assembled wiring (202), and a second insulating layer (211b) may be disposed on the first assembled wiring (201) and the second assembled wiring (202). The first insulating layer (211a) and the second insulating layer (211b) may be oxide films, nitride films, etc., but are not limited thereto.

[0054] The light-emitting element (150) may include a red light-emitting element (150), a green light-emitting element (150G), and a blue light-emitting element (150B0) to form a unit pixel (sub-pixel), but is not limited thereto, and may also implement red and green by providing a red phosphor and a green phosphor, etc.

[0055] The substrate (200) may be formed of glass or polyimide. Additionally, the substrate (200) may include flexible materials such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Furthermore, the substrate (200) may be a transparent material, but is not limited thereto.

[0056] The third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0057] The third insulating layer (206) may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer may be flexible to enable the flexible function of the display device. For example, the third insulating layer (206) may be an anisotropy conductive film (ACF), an anisotropy conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer that is electrically conductive in the direction perpendicular to the thickness, but electrically insulating in the direction horizontal to the thickness.

[0058] The third insulating layer (206) may include an assembly hole (203) into which a light-emitting element (150) is inserted. Accordingly, when self-assembling, the light-emitting element (150) can be easily inserted into the assembly hole (203) of the third insulating layer (206). The assembly hole (203) may be called an insertion hole, a fixing hole, an alignment hole, etc.

[0059] The gap between the assembly wiring (201, 202) is formed to be smaller than the width of the light-emitting element (150) and the width of the assembly hole (203), so that the assembly position of the light-emitting element (150) using an electric field can be fixed more precisely.

[0060] A third insulating layer (206) is formed on the assembled wiring (201, 202) to protect the assembled wiring (201, 202) from fluid (1200) and prevent leakage of current flowing through the assembled wiring (201, 202). The third insulating layer (206) may be formed as a single layer or multiple layers of an inorganic insulator such as silica or alumina, or an organic insulator.

[0061] Additionally, the third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0062] The third insulating layer (206) may be an insulating layer that is adhesive or a conductive adhesive layer that is conductive. The third insulating layer (206) may be flexible so that it can enable the flexible function of the display device.

[0063] The third insulating layer (206) has a partition, and an assembly hole (203) can be formed by this partition. For example, when forming the substrate (200), a portion of the third insulating layer (206) is removed so that each of the light-emitting elements (150) can be assembled in the assembly hole (203) of the third insulating layer (206).

[0064] An assembly hole (203) is formed in the substrate (200) to which light-emitting elements (150) are joined, and the surface on which the assembly hole (203) is formed can come into contact with a fluid (1200). The assembly hole (203) can guide the precise assembly position of the light-emitting elements (150).

[0065] Meanwhile, the assembly hole (203) may have a shape and size corresponding to the shape of the light-emitting element (150) to be assembled at the corresponding location. Accordingly, it is possible to prevent other light-emitting elements from being assembled in the assembly hole (203) or multiple light-emitting elements from being assembled.

[0066] FIG. 4 is a drawing showing an example in which a light-emitting element according to an embodiment is assembled on a substrate by a self-assembly method, and the self-assembly method of the light-emitting element is explained with reference to the drawings.

[0067] The substrate (200) may be a panel substrate of a display device. In the following description, the substrate (200) is described as being a panel substrate of a display device, but the embodiment is not limited thereto.

[0068] Referring to FIG. 4, a plurality of light-emitting elements (150) can be introduced into a chamber (1300) filled with a fluid (1200). The fluid (1200) may be water, such as ultrapure water, but is not limited thereto. The chamber may be called a water tank, a container, a vessel, etc.

[0069] After this, the substrate (200) can be placed on the chamber (1300). According to an embodiment, the substrate (200) may be introduced into the chamber (1300).

[0070] As illustrated in FIG. 3, a pair of assembly wires (201, 202) corresponding to each of the light-emitting elements (150) to be assembled may be arranged on the substrate (200).

[0071] Referring to FIG. 4, after the substrate (200) is placed, an assembly device (1100) including a magnetic material can move along the substrate (200). For example, a magnet or an electromagnet may be used as the magnetic material. The assembly device (1100) can move while in contact with the substrate (200) to maximize the area where the magnetic field is applied within the fluid (1200). According to an embodiment, the assembly device (1100) may include a plurality of magnetic materials or a magnetic material of a size corresponding to that of the substrate (200). In this case, the movement distance of the assembly device (1100) may be limited to within a predetermined range.

[0072] Due to the magnetic field generated by the assembly device (1100), the light-emitting element (150) inside the chamber (1300) can move toward the assembly device (1100).

[0073] While moving toward the assembly device (1100), the light-emitting element (150) can enter the assembly hole (203) by means of a dielectrophoretic force (DEP force) and come into contact with the substrate (200).

[0074] Specifically, the assembly wiring (201, 202) forms an electric field by an externally supplied power source, and a dielectrophoretic force can be formed between the assembly wiring (201, 202) by this electric field. By this dielectrophoretic force, a light-emitting element (150) can be fixed to an assembly hole (203) on a substrate (200).

[0075] By means of an electric field applied by assembly wiring (201, 202) formed on the substrate (200), the light-emitting element (150) in contact with the substrate (200) can be prevented from being detached by the movement of the assembly device (1100). According to the embodiment, by the self-assembly method using the electromagnetic field described above, the time required for each light-emitting element (150) to be assembled on the substrate (200) can be drastically shortened, so a large-area high-pixel display can be implemented more quickly and economically.

[0076] At this time, a predetermined solder layer (not shown) is formed between the light-emitting element (150) assembled on the assembly hole (203) of the substrate (200) and the assembly electrode, thereby improving the bonding strength of the light-emitting element (150).

[0077] Next, a molding layer (not shown) may be formed in the assembly hole (203) of the substrate (200). The molding layer may be a transparent resin or a resin containing a reflective material or a scattering material. The substrate (200) may be an assembly substrate.

[0078] FIG. 5 is a plan view showing a first assembly substrate for transfer of a semiconductor light-emitting device according to an embodiment, and FIG. 6 is a cross-sectional view AA of FIG. 5.

[0079] Referring to FIGS. 5 and 6, a first assembly substrate (300) for transferring a semiconductor light-emitting device may include a first substrate (310), a plurality of first assembly wirings (320) disposed on the first substrate (310), a first dielectric film (330) disposed on the plurality of first assembly wirings (320), a first partition (340) disposed on the first dielectric film (330) and having a first recess (R1), and a first dielectric film (350) disposed on the first partition.

[0080] The first substrate (310) may include a first region (A1). The first region (A1) may be a region where a first semiconductor light-emitting element is assembled. The first substrate (310) may be a substrate made of glass, but the material is not limited.

[0081] A plurality of first assembly wires (320) may be spaced apart in a first region (A1) on a first substrate (310). Different power sources are applied to the plurality of first assembly wires (320) in alternating current to form a DEP force, thereby allowing a red light-emitting element (150R) to be assembled in the first recess (R1). The first assembly wires (320) may include electrodes made of metal material.

[0082] The first dielectric film (330) may be formed to cover the first substrate (310) and the first assembly wiring (320). The first dielectric film (330) may include materials such as SiNx or SiO2, but is not limited thereto.

[0083] The first partition (340) may include a first recess (R1). The first recess (R1) may be formed to penetrate the upper and lower portions of the first partition (340). The first recess (R1) may be placed in a first region (A1) of the first substrate (310).

[0084] The first-2 dielectric film (350) may be formed to cover the substrate, the assembled wiring, the first-1 dielectric film, and the partition. The first-2 dielectric film (350) may include materials such as SiNx or SiO2, but is not limited thereto.

[0085] The first semiconductor light-emitting element (150R) may be placed in the first recess (R1). The first semiconductor light-emitting element (150R) may include a red light-emitting element. That is, the first recess (R1) may be an assembly hole in which the first semiconductor light-emitting element (150R) is assembled.

[0086] FIG. 7 is a plan view showing a second assembly substrate for transfer of a semiconductor light-emitting device according to an embodiment, and FIG. 8 is a cross-sectional view of FIG. 7.

[0087] Referring to FIGS. 7 and 8, a second assembly substrate (400) for transfer of a semiconductor light-emitting device may include a second substrate (410), a plurality of second assembly wirings (420) disposed on the second substrate (410), a second-1 dielectric film (430) disposed on the plurality of second assembly wirings (420), a second partition (440) disposed on the second-1 dielectric film (430) and having a second recess (R2), and a second-2 dielectric film (450) on the second partition (440).

[0088] The second substrate (410) may include a first region (A1) and a second region (A2). The second region (A2) may be a region where the second semiconductor light-emitting element (150G) is assembled. The first region (A1) may be an outer region other than the region where the second semiconductor light-emitting element (150G) is assembled.

[0089] A plurality of second assembly wirings (420) may be formed in a second region (A2) of the second substrate (410). The second partition (440) may include a first recess (R1) and a second recess (R2). The first recess (R1) may be placed in a first region (A1) of the second substrate (410), and the second recess (R2) may be placed in a second region (A2) of the second substrate (410).

[0090] The first recess (R1) may be an area to accommodate the first semiconductor light-emitting element (150R) picked up by the stamp. An anti-adsorption pattern (P) may be formed within the first recess (R1). An uneven pattern may be formed on the upper surface of the second substrate (410) within the first recess (R1). An uneven pattern may be formed on the upper and lower surfaces of the second-1 dielectric film (430) within the first recess (R1). An uneven pattern may be formed on the upper and lower surfaces of the second-2 dielectric film (450) within the first recess (R1).

[0091] A second semiconductor light-emitting element (150G) may be disposed in the second recess (R2). The second semiconductor light-emitting element (150G) may be disposed in the second region (A2) of the second substrate (410). The second semiconductor light-emitting element (150G) may include a green light-emitting element. The second recess (R2) may be an assembly hole in which the second semiconductor light-emitting element (150G) is assembled.

[0092] The above-described anti-adsorption pattern can prevent the red light-emitting element from adsorbing to the second assembly substrate when the green light-emitting element is picked up.

[0093] FIG. 9 is a plan view showing a third assembly substrate for transfer of a semiconductor light-emitting device according to an embodiment, and FIG. 10 is a cross-sectional view of FIG. 9.

[0094] Referring to FIG. 9 and FIG. 10, a third assembly substrate (500) for transfer of a semiconductor light-emitting device may include a third substrate (510), a plurality of third assembly wirings (520) disposed on the third substrate (510), a third-1 dielectric film (530) disposed on the plurality of third assembly wirings (520), a third partition (540) disposed on the third-1 dielectric film (530) and having a third recess (R3), and a third-2 dielectric film (550) on the third partition (540).

[0095] The third substrate (510) may include a first region (A1), a second region (A2), and a third region (A3). The third region (A3) may be a region where a third semiconductor light-emitting element is assembled. The first region (A1) and the second region (A2) may be outer regions.

[0096] A plurality of third assembly wirings (520) may be formed in a third region (A3) of the third substrate (510). The third partition (540) may include a first recess (R1), a second recess (R2), and a third recess (R3). The first recess (R1) may be placed in a first region (A1) of the third substrate (410), the second recess (R2) may be placed in a second region (A2) of the third substrate (510), and the third recess (R3) may be placed in a third region (A3) of the third substrate (510).

[0097] The first recess (R1) may be an area to accommodate the first semiconductor light-emitting element (150R) picked up by the stamp. The second recess (R2) may be an area to accommodate the second semiconductor light-emitting element (150G) picked up by the stamp.

[0098] An adsorption prevention pattern (P) may be formed within the first recess (R1) and the second recess (R2). An uneven pattern may be formed on the upper surface of the third substrate (510) within the first recess (R1) and the second recess (R2). An uneven pattern may be formed on the upper and lower surfaces of the third-1 dielectric film (530) within the first recess (R1) and the second recess (R2). An uneven pattern may be formed on the upper and lower surfaces of the third-2 dielectric film (550) within the first recess (R1) and the second recess (R2).

[0099] A third semiconductor light-emitting element (150B) may be disposed in the third recess (R3). The third semiconductor light-emitting element (150G) may be disposed in the third region (A3) of the third substrate (510). The third semiconductor light-emitting element (150B) may include a blue light-emitting element. The third recess (R3) may be an assembly hole.

[0100] The above-described anti-adsorption pattern can prevent the red light-emitting element and the green light-emitting element from adsorbing to the third assembly substrate when the blue light-emitting element is picked up.

[0101] FIG. 11 is a cross-sectional view showing a second assembly substrate for transfer of a semiconductor light-emitting device according to a second embodiment.

[0102] Referring to FIG. 11, a second assembly substrate for transfer of a semiconductor light-emitting device may include a second substrate (410), a plurality of second assembly wires (420) disposed on the second substrate (410), a second-1 dielectric film (430) disposed on the plurality of second assembly wires (420), a second partition (440) disposed on the second-1 dielectric film (430) and having a second recess (R2), and a second-2 dielectric film (450) on the second partition (440).

[0103] The second substrate (410) may include a first region (A1) and a second region (A2). A plurality of second assembly wirings (420) may be formed in the second region (A2) of the second substrate (410). The second partition (440) may include a first recess (R1) and a second recess (R2). The first recess (R1) may be placed in the first region (A1) of the second substrate (410), and the second recess (R2) may be placed in the second region (A2) of the second substrate (410).

[0104] An adsorption prevention pattern may be formed within the first recess (R1). The adsorption prevention pattern may include a first hole pattern (H1).

[0105] A first hole pattern (H1) may be formed in a part of the second substrate (410) within the first recess (R1). A first hole pattern (H1) may be formed in a part of the second-1 dielectric film (430) within the first recess (R1). A first hole pattern (H1) may be formed in a part of the second-2 dielectric film (450) within the first recess (R1).

[0106] The shape of the first hole pattern (H1) may be formed as a circular, elliptical, or polygonal shape, but the shape is not limited.

[0107] Although the above description describes forming a hole pattern on the second assembly substrate as an example, a hole pattern can be formed on the third assembly substrate in the same way.

[0108] FIG. 12 is a cross-sectional view showing a second assembly substrate for transfer of a semiconductor light-emitting device according to a third embodiment.

[0109] Referring to FIG. 12, a second assembly substrate for transfer of a semiconductor light-emitting device may include a second substrate (410), a plurality of second assembly wires (420) disposed on the second substrate (410), a second-1 dielectric film (430) disposed on the plurality of second assembly wires (420), a second partition (440) disposed on the second-1 dielectric film (430) and having a second recess (R2), and a second-2 dielectric film (450) on the second partition (440).

[0110] The second substrate (410) may include a first region (A1) and a second region (A2). A plurality of second assembly wirings (420) may be formed in the second region (A2) of the second substrate (410). The second partition (440) may include a first recess (R1) and a second recess (R2). The first recess (R1) may be placed in the first region (A1) of the second substrate (410), and the second recess (R2) may be placed in the second region (A2) of the second substrate (410).

[0111] An adsorption prevention pattern may be formed within the first recess (R1). The adsorption prevention pattern may include a second hole pattern (H2) and an uneven pattern (P1).

[0112] An uneven pattern (P1) may be formed on a portion of the upper surface of the second substrate (410) within the first recess (R1). A second hole pattern (H2) may be formed on a portion of the second-1 dielectric film (430) within the first recess (R1). A second hole pattern (H2) may be formed on a portion of the second-2 dielectric film (450) within the first recess (R1).

[0113] The shape of the second hole pattern (H2) may be formed as a circular, elliptical, or polygonal shape, but the shape is not limited.

[0114] Although the above description describes forming an anti-adsorption pattern on the second assembly substrate as an example, an anti-adsorption pattern can be formed on the third assembly substrate in the same way.

[0115] FIG. 13 is a flowchart showing a method for manufacturing a transfer substrate of a semiconductor light-emitting device according to an embodiment.

[0116] The method for manufacturing a transfer substrate of a semiconductor light-emitting device according to the embodiment is described with a second assembled substrate as one example, and may also be applied to a third assembled substrate.

[0117] Referring to FIG. 13, a method for manufacturing a transfer substrate for a semiconductor light-emitting device according to an embodiment may include the steps of: providing a substrate (S100); forming a metal electrode on the substrate to form an assembly wiring (S200); forming an anti-adsorption pattern on the substrate where the assembly wiring is not formed (S300); forming a first dielectric film to cover the substrate and the assembly wiring (S400); forming a partition wall with a recess formed on the first dielectric film (S500); and forming a first dielectric film on the substrate, the assembly wiring, the first dielectric film, and the partition wall (S600).

[0118] With reference to FIGS. 14 to 18, a method for manufacturing a transfer substrate of a semiconductor light-emitting device according to an embodiment will be described in more detail.

[0119] FIGS. 14 to 18 are cross-sectional views illustrating a method for manufacturing a transfer substrate of a semiconductor light-emitting device according to an embodiment.

[0120] As shown in FIG. 14, once a substrate is provided, assembly wiring can be formed on the substrate using metal electrodes. The assembly wiring (420) can be formed spaced apart on the substrate.

[0121] As illustrated in FIG. 15, when assembly wiring (420) is formed on a substrate, an anti-adsorption pattern (P) can be formed at the location where a red light-emitting element is to be mounted. The anti-adsorption pattern (P) can be masked using a photoresist on the assembly wiring, and an irregularity can be formed on the substrate at the location where the red light-emitting element is to be mounted using wet etching or dry etching. Once the irregularity is formed on the substrate, the photoresist can be removed.

[0122] As illustrated in FIG. 16, when irregularities (P) are formed on the substrate, a first dielectric film (430) can be formed to cover the substrate and the assembly wiring (420). At this time, the first dielectric film (430) may have irregularities formed on the lower surface and the upper surface by the irregularities (P) formed on the substrate.

[0123] As illustrated in FIG. 17, when a first-1 dielectric film (430) is formed on a substrate (410) and an assembly wiring (420), a partition (440) can be formed on the first-1 dielectric film (430). The partition (400) can form a partition with a recess formed by forming an insulating film to cover the first-1 dielectric film (430) and removing a portion of the insulating film.

[0124] As illustrated in FIG. 18, when a partition (400) is formed on the first dielectric film (430), a first dielectric film (450) can be formed on the partition (440). The first dielectric film (450) can be formed to cover the substrate (410), the assembly wiring (420), the first dielectric film (430), and the partition (440).

[0125] Once the assembly substrate described above is completed, a semiconductor light-emitting device can be self-assembled within the recess.

[0126] The embodiments may be applied to display devices. For example, the embodiments may be applied to digital TVs, mobile phones, smartphones, laptop computers, tablet PCs, desktop computers, etc., but are not limited thereto.

Claims

1. A substrate comprising a first region where a first semiconductor light-emitting element is assembled and an outer region spaced apart from the first region; A partition disposed on the substrate and including a recess at a position corresponding to the outer region of the substrate; and A transfer substrate for a semiconductor light-emitting device comprising: an adsorption prevention pattern disposed within the above-mentioned recess.

2. In Paragraph 1, The recess of the above partition is a transfer substrate for a semiconductor light-emitting element capable of accommodating a second semiconductor light-emitting element picked up in the outer region of the above substrate.

3. In Paragraph 1, The above-mentioned adsorption prevention pattern is a transfer substrate for a semiconductor light-emitting device comprising a first irregular pattern formed on the substrate exposed through the recess.

4. In Paragraph 1, The above-described adsorption prevention pattern is a transfer substrate for a semiconductor light-emitting device comprising a first hole pattern that penetrates the substrate exposed through the recess from top to bottom.

5. In Paragraph 1, A transfer substrate for a semiconductor light-emitting device further comprising a dielectric film formed on the above substrate.

6. In Paragraph 5, The above-mentioned adsorption prevention pattern is a transfer substrate for a semiconductor light-emitting device comprising a second irregular pattern formed on the dielectric film exposed through the above-mentioned recess.

7. In Paragraph 5, The above-mentioned adsorption prevention pattern is a transfer substrate for a semiconductor light-emitting device comprising a second hole pattern penetrating vertically through the dielectric film exposed through the above-mentioned recess.

8. In Paragraph 7, The above-mentioned adsorption prevention pattern is a transfer substrate for a semiconductor light-emitting device comprising a third irregular pattern formed on the substrate exposed through the second hole pattern.

9. A step of forming a partition wall including a recess for accommodating a second semiconductor light-emitting element picked up by a stamp in an outer region of a substrate where the first semiconductor light-emitting element is not assembled; and A method for manufacturing a transfer substrate for a semiconductor light-emitting device, comprising the step of forming an adsorption prevention pattern within the above-mentioned recess.

10. In Paragraph 9, A method for manufacturing a transfer substrate of a semiconductor light-emitting device by forming a first uneven pattern on the substrate exposed through the above recess to form the adsorption prevention pattern.

11. In Paragraph 9, A method for manufacturing a transfer substrate of a semiconductor light-emitting device, wherein a first hole pattern is formed that penetrates the substrate exposed through the recess above and below to form the adsorption prevention pattern.

12. In Paragraph 9, A method for manufacturing a transfer substrate for a semiconductor light-emitting device, further comprising the step of forming a dielectric film on the substrate.

13. In Paragraph 12, A method for manufacturing a transfer substrate for a semiconductor light-emitting device, wherein a second irregular pattern is formed on the dielectric film exposed through the above recess to form the adsorption prevention pattern.

14. In Paragraph 12, A method for manufacturing a transfer substrate of a semiconductor light-emitting device by forming a second hole pattern penetrating vertically through the dielectric film exposed through the above recess to form the adsorption prevention pattern.

15. In Paragraph 13, A method for manufacturing a transfer substrate of a semiconductor light-emitting device by forming a third irregular pattern on the substrate exposed through the second hole pattern to form the adsorption prevention pattern.

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