1results about How to "Achieve reversible conversion" patented technology

The application belongs to the technical field of external diagnostic devices, and particularly relates to a memristor for detecting preeclampsia and a preparation method. The memristor comprises, from bottom to top, a bottom electrode layer, a functional layer and a top electrode layer along the thickness direction, the functional layer is a hafnium oxide film and a bismuth ferrite film, the hafnium oxide film and the bismuth ferrite film form a heterojunction structure, the bottom electrode layer is a conductive glass layer, and the top electrode layer is a conductive electrode layer. The application forms the functional layer with a heterojunction structure based on BiFeO3 / HfO2, promotes the migration of oxygen ions and the formation of conductive filaments, has excellent memristor characteristics and stable resistance switching behavior, can specifically respond to the abundant active oxygen in the serum of preeclampsia, changes the conductive path and the resistance switching behavior of the memristor by changing the oxygen vacancy dynamics and the oxidation-reduction characteristics in BiFeO3 / HfO2, realizes rapid detection of preeclampsia, and has excellent stability and reliability.