1results about How to "Growth restriction" patented technology

This invention belongs to the field of black phosphorus preparation technology, and particularly relates to a method for preparing black phosphorus thin films with controllable thickness based on CVT. The technical problem to be solved is the technical challenge of large-size film growth in the industrial preparation of black phosphorus. Key technical points: S1, Selecting a "Z-shaped" quartz tube as the reaction vessel; S2, Preparing an epitaxial growth substrate with lattice-inducing ability; S3, Loading the quartz tube with the high end as the raw material conversion zone and the low end as the epitaxial growth zone; wherein, loading the raw material conversion zone involves placing a mixed phosphorus source and mineralizer at the high end of the quartz tube; loading the epitaxial growth zone involves placing the substrate at the low end of the quartz tube; S4, After vacuum sealing the quartz tube, a seed layer is generated, and under the induction of the seed layer, black phosphorus grows laterally along the surface of the substrate; S5, Cooling the quartz tube to room temperature at a certain cooling rate to obtain a cooled black phosphorus film of a certain thickness.