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2results about How to "Growth restriction" patented technology

Preparation method of mesoporous material, foaming aggregate, lithium slag micro powder foaming material doped with mesoporous material and preparation method of lithium slag micro powder foaming material

The invention discloses a preparation method of a mesoporous material, foamed aggregate, a mesoporous material-doped lithium slag micro-powder foamed material and a preparation method of the mesoporous material-doped lithium slag micro-powder foamed material, and belongs to the technical field of environmental substitute materials. Specific lithium slag is ground to a certain specific surface area and then mixed with silica powder and a mesoporous material, and then a binding agent, a fiber material, an exciting agent and a foaming agent are added according to a certain sequence; and the foaming material with uniform pores, firmness and light weight is obtained by fully stirring and adopting a physical and chemical combined foaming mode. The foaming material is environment-friendly and low in cost, and various properties of the foaming material are better than those of materials in the prior art.
Owner:SICHUAN HUHUI SURVEYING & DESIGN CO LTD +1

A method for preparing a thickness-controllable black phosphorus thin film based on a CVT

This invention belongs to the field of black phosphorus preparation technology, and particularly relates to a method for preparing black phosphorus thin films with controllable thickness based on CVT. The technical problem to be solved is the technical challenge of large-size film growth in the industrial preparation of black phosphorus. Key technical points: S1, Selecting a "Z-shaped" quartz tube as the reaction vessel; S2, Preparing an epitaxial growth substrate with lattice-inducing ability; S3, Loading the quartz tube with the high end as the raw material conversion zone and the low end as the epitaxial growth zone; wherein, loading the raw material conversion zone involves placing a mixed phosphorus source and mineralizer at the high end of the quartz tube; loading the epitaxial growth zone involves placing the substrate at the low end of the quartz tube; S4, After vacuum sealing the quartz tube, a seed layer is generated, and under the induction of the seed layer, black phosphorus grows laterally along the surface of the substrate; S5, Cooling the quartz tube to room temperature at a certain cooling rate to obtain a cooled black phosphorus film of a certain thickness.
Owner:SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES