The application provides a multispectral detection
chip, comprising a readout
wafer, a bearing
wafer, a conductive hole, a visible light pixel and an
infrared pixel; the bearing
wafer is on the readout wafer; the conductive hole penetrates through the bearing wafer, the visible light pixel is embedded in the bearing wafer, and the
infrared pixel is on the conductive hole. The application provides a preparation method, comprising the following steps: preparing the visible light pixel and the conductive hole on the front surface of the bearing wafer; stacking the front surface of the bearing wafer on the readout wafer;
thinning the back surface of the bearing wafer to
expose the conductive hole and arranging the
infrared pixel. The application also provides a multispectral detection
chip, comprising a readout wafer and a visible light pixel group and an infrared pixel group which are cross-arranged on the readout wafer. The application also provides a preparation method, comprising the following steps: forming a first temporary layer, a first support layer, a heat-sensitive film and first and second electrodes on the readout wafer to form an infrared pixel; and continuously forming a second temporary layer, a second support layer, a photosensitive film and third and fourth electrodes to form a visible light pixel.