Photoresist compositions and methods of forming photolithographic patterns

A technology of photoresist and photolithography pattern, which is applied in the field of electronic device manufacturing, and can solve problems such as differential photospeed and CD uniformity

Active Publication Date: 2015-01-28
ROHM & HAAS ELECTRONICS MATERIALS LLC
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is not a viable overall solution as low molecular weight polymers have been found to exhibit poor photospeed and CD uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist compositions and methods of forming photolithographic patterns
  • Photoresist compositions and methods of forming photolithographic patterns
  • Photoresist compositions and methods of forming photolithographic patterns

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0066] Preparation of photoresist composition

[0067] Photoresists used in accordance with the present invention are generally prepared according to known procedures. For example, the photoresist composition of the present invention can be prepared by dissolving photoresist components in a solvent component. The ideal total solids content of a photoresist will depend on various factors such as the specific polymers in the composition, final layer thickness and exposure wavelength. Typically the solids content of the photoresist varies from 1 to 10 wt%, more typically from 2 to 5 wt%, based on the total weight of the photoresist composition.

[0068] The photoresist compositions of the present invention find particular utility in negative tone development processes as described below.

[0069] negative tone developing method

[0070] The present invention further provides methods of forming a photoresist relief image and producing electronic devices using the photoresist of...

Embodiment

[0088] Matrix Polymer Synthesis

[0089] The following monomers were employed in the synthesis of the copolymers used in the examples:

[0090] A. Leaving group monomer

[0091]

[0092] B. Lactone group monomer

[0093]

[0094] C. Polar group monomer

[0095]

[0096] A representative example of the polymerization process is given below and all other copolymers were prepared using a similar process with different initiator loading conditions to control molecular weight.

[0097] Synthesis of Poly(MCPMA / NLM)(P-17)

[0098] MCPMA (17.234 g) and NLM (22.766 g) monomers were dissolved in 60 g propylene glycol methyl ether acetate (PGMEA). The monomer solution was degassed by bubbling nitrogen for 20 minutes. PGMEA (31.938 g) was added to a 500 mL three-necked flask equipped with a condenser and mechanical stirrer and degassed by bubbling nitrogen for 20 minutes. The solvent in the reaction flask was then warmed to 80°C. V601 (dimethyl-2,2-azobisisobutyrate) (2.83...

Embodiment 39

[0141] 2.526 g polymer P-17 was dissolved in 29.070 g PGMEA, 19.380 g cyclohexanone and 48.450 g methyl-2-hydroxyisobutyrate. To this mixture was added 0.484 g of "PAGA" described below, 0.029 g of 1-(tert-butoxycarbonyl)-4-hydroxypiperidine quencher, and 0.062 g of PnBMA. The resulting mixture was rolled on a roller for 6 hours and then filtered through a Teflon filter with a 0.2 micron pore size.

[0142]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Description

technical field [0001] The present invention relates generally to the fabrication of electronic devices. More specifically, the present invention relates to photoresist compositions, coated substrates, and photolithographic methods that allow the formation of fine patterns using negative tone development processes. Background technique [0002] In the semiconductor manufacturing industry, photoresist materials are used to transfer images to one or more underlying layers (eg, metal, semiconductor, and dielectric layers) distributed over a semiconductor substrate, as well as to the substrate itself. In order to increase the integration density of semiconductor devices and form structures with nanometer (nm) dimensions, photoresists and photolithography process tools with high resolution have been and continue to be developed. [0003] Positive-working chemically amplified photoresists have traditionally been used for high-resolution processing. Such resists typically employ ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): G03F7/004G03F7/039G03F7/00
CPCG03F7/2041G03F7/0397G03F7/325G03F7/091G03F7/0045G03F7/0392G03F7/26
InventorY·C·裴R·贝尔T·卡多拉西亚李承泫刘沂朴钟根
OwnerROHM & HAAS ELECTRONICS MATERIALS LLC