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Solid-state image sensor, camera and method of driving solid-state image sensor

A solid-state image and sensor technology, applied in image communication, color TV parts, TV system parts, etc., can solve the problems of low readout accuracy of the second optical signal and low readout accuracy of the first optical signal, and shorten the Readout time and effect of improving readout accuracy

Active Publication Date: 2017-04-12
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the time to read out the first optical signal and the time to read out the second optical signal are similarly defined while giving priority to shortening the readout time, the readout accuracy of the second optical signal is lower than that of the first optical signal

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  • Solid-state image sensor, camera and method of driving solid-state image sensor

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Embodiment Construction

[0016] Embodiments of the present invention will now be described with reference to the accompanying drawings.

[0017] refer to figure 1 and figure 2 The solid-state image sensor IS1 according to the first embodiment of the present invention will be described. The solid-state image sensor IS1 may include a plurality of pixel units 101 , a plurality of readout sections 113 , a plurality of holding sections 150 , a horizontal scanning circuit 134 , and an amplifier 133 . The solid-state image sensor IS1 may further include a vertical scanning circuit (not shown).

[0018] Multiple pixel cells 101 may be arranged to form multiple rows and multiple columns, while figure 1 Only one pixel unit 101 is shown. Each pixel unit 101 includes a first photoelectric converter 102a and a second photoelectric converter 102b as a plurality of photoelectric converters. Each pixel unit 101 further includes an amplifier (amplifying transistor) 105 provided in common for the first photoelect...

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Abstract

A solid-state image sensor, a camera, and a method of driving the solid-state image sensor are disclosed. The image sensor includes a pixel unit having first and second photoelectric converters, an amplifier commonly provided for the first and second photoelectric converters, and charges configured to be generated in the first and second photoelectric converters to the first and second pass transistors of the input section of the amplifier, respectively. The signal read out by the readout part includes the first optical signal read out in a state where charges are transferred from the first photoelectric converter to the input part through the first transfer transistor, and the first optical signal read out after the first optical signal is read out through the second The second transfer transistor transfers the charge from the second photoelectric converter to the second optical signal read in the state of the input section.

Description

technical field [0001] The present invention relates to a solid-state image sensor, a camera, and a method of driving the solid-state image sensor. Background technique [0002] With the recent demands for a multi-pixel structure and a high frame rate of solid-state image sensors, techniques for shortening the time to read out signals from pixels have become increasingly important. Japanese Patent Laid-Open No. 2004-134867 describes a solid-state image sensor that provides one amplification element corresponding to a plurality of photoelectric converters. Hereinafter, for convenience of description, one of the plurality of photoelectric converters will be referred to as a "first photoelectric converter", and the other will be referred to as a "second photoelectric converter". The solid-state image sensor described in Japanese Patent Laid-Open No. 2004-134867 transfers the charge of the first photoelectric converter to the input portion of the amplifying element and reads ou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H01L27/146
CPCH04N25/778H04N25/75H04N25/704
Inventor 箕轮雅章沖田彰有岛优岩根正晃大下内和树
Owner CANON KK