Data writing method of flash memory and flash memory

A data writing and flash memory technology, which is applied in memory systems, electrical digital data processing, instruments, etc., can solve the problems of no continuity in programming and low efficiency of data writing to flash memory arrays, so as to improve efficiency and ensure continuity Effect

Active Publication Date: 2021-06-01
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] In NAND flash memory, there are cache registers (Cache page buffer) and data registers (Data pagebuffer). Data writes are first stored in the cache register quickly, and then moved to the data register. In related technologies, when data is written into the flash memory During one programming process of the physical array, only one page data can be moved from the cache register to the data register. As a result, when the number of data pages programmed into the physical array is more than one, it is necessary to wait for the end of the programming and perform the page separately. The movement of data from cache registers to data registers makes writing data to the flash array inefficient and programming non-sequential

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  • Data writing method of flash memory and flash memory
  • Data writing method of flash memory and flash memory
  • Data writing method of flash memory and flash memory

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Embodiment Construction

[0049] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the examples provided here are only used to explain the present invention, not to limit the present invention. In addition, the examples provided below are some examples for implementing the present invention, rather than providing all the examples for implementing the present invention. In the case of no conflict, the technical solutions recorded in the embodiments of the present invention can be combined in any manner implement.

[0050] It should be noted that, in the embodiments of the present invention, the terms "comprising", "comprising" or any other variant thereof are intended to cover a non-exclusive inclusion, so that a method or device comprising a series of elements not only includes the explicitly stated elements, but also include other elements not explicitly listed, or also include elements inherent ...

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Abstract

The invention discloses a data writing method of a flash memory and the flash memory. The flash memory includes: a cache register for caching page data of a single page size; the page type to which the page data belongs is one of the following : low page LP, middle page MP, high page UP; controller, used to control the page types of the LP, the MP and the UP page data to move from the cache register to the A data register; and, after the data register has stored the page data of the LP, the MP, and the UP, write the page data stored in the data register into a flash memory array; the data register is used The page data of different page types moved from the cache register is cached; the flash memory array is used for storing the page data written by the controller.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for writing data into a flash memory and the flash memory. Background technique [0002] In NAND flash memory, there are cache registers (Cache page buffer) and data registers (Data pagebuffer). Data writes are first stored in the cache register quickly, and then moved to the data register. In related technologies, when data is written into the flash memory During one programming process of the physical array, only one page data can be moved from the cache register to the data register. As a result, when the number of data pages programmed into the physical array is more than one, it is necessary to wait for the end of the programming and perform the page separately. The movement of data from cache registers to data registers makes writing data to the flash array inefficient and programming non-sequential. Contents of the invention [0003] In view of this, an ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02G06F12/0873
CPCG06F12/0246G06F12/0873G06F2212/7203Y02D10/00
Inventor 万维俊李跃平
Owner YANGTZE MEMORY TECH CO LTD
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