33results about How to "Write implementation" patented technology

The invention provides an application programming interface automatic test method, system and device, and a storage medium. The application programming interface automatic test method includes the following steps: obtaining Excel files to be processed; obtaining test case data from the Excel files according to a preset format, wherein the test case data includes a test name corresponding to each test case, an application programming interface service address, an interface name, test modes, test request parameters, and verification methods; and executing each test case according to the test case data. The method simplifies the writing method of the test case, and the tester can complete the the writing method of the test case by only filling in the corresponding position data in Excel, without the need of understanding the code itself. The existing test report of a preset format is modified into the test report corresponding to each test case according to the data in the Excels, which improves the conversion rate of the test case, and improves the reuse rate of the test case through the reuse of the test report.

The invention discloses a pixel circuit, a driving method thereof, a display panel and a display device, wherein the pixel circuit comprises a driving transistor, a data write-in sub-circuit, an initializing sub-circuit, a voltage pre-write-in sub-circuit, a threshold compensating sub-circuit, a first light emitting control sub-circuit, a second light emitting control sub-circuit, a capacitor anda light emitting device. Because before light emitting of the light emitting device in the pixel circuit, the voltage pre-write-in sub-circuit pre-stores the voltage of the voltage end of a light emitting power supply into a capacitor, the magnitude of the actual light emitting current is related with the voltage of the voltage end of the light emitting power supply though the light emitting current is driven by a first voltage source, and the magnitude is irrelevant with voltage of the first voltage source. The pixel circuit, the driving method, the display panel and the display device have advantages of eliminating influence of voltage drop to displaying of the light emitting device in a light emitting period of the first voltage source, and improving non-uniform displaying of an OLED display screen.

A dual-beam super-resolution optical storage material read-write device comprises an optical path and a computer; the optical path consists of a recording optical path, a reading-out optical path anda fluorescence collecting optical path. A read-write method is provided. The invention adopts pulsed light induction-continuous photoinhibition quenching recording mode, can quickly read information,solves the problem of recording and reading of materials simultaneously for the first time in the field of super-resolution optical storage, overcomes the erasing effect of photochromic materials in super-resolution recording, and obtains smaller recording spots and improve the storage density of optical discs.

Embodiments of the present application provide a method for writing in a graphic database, an electronic device, and a computer-readable storage medium, and relate to the graphic database technology field. The method comprises the following steps of acquiring each vertex data and each edge data, then acquiring the mapping relationship between the vertex and the vertex identifiers, and writing eachvertex data and each edge data into the graphic database based on the mapping relationship between the vertex and the vertex identifiers. Embodiments of the present application realize the purpose ofwriting the massive amounts of data into the graphic database.

A nonvolatile semiconductor memory device for storing data by accumulating charge in a floating gate (32) includes: a plurality of MOS transistors (24, 25, 26) sharing the floating gate (32). In the device, a PMOS (24) is used for coupling during writing and an n-type depletion MOS (DMOS) (25) is used for coupling during erasure. Coupling of channel inversion capacitance by the PMOS (24) is used for writing and coupling of depletion capacitance by the n-type DMOS (25) is used for erasure, thereby increasing the erase speed without increase of area, as compared to a conventional three-transistor nonvolatile memory element.

Embodiments of the present application provide a method for writing a graphic database, an electronic device, and a computer-readable storage medium, and relate to the graphic database technology field. The method comprises obtaining the vertex data carrying the vertex identifiers and the edge data from a distributed file system through a distributed computing platform, wherein the data on eitherside carries the vertex identifiers corresponding to the two vertices corresponding to the edge data, and then writting the vertex data carrying the vertex identifiers and the edge data into a graphics database through the distributed computing platform. Embodiments of the present application realize the purpose of writing the massive amounts of data into the graphic database.

The invention discloses an indexing method and device based on a key value pair KV system, electronic equipment and a medium, and relates to the technical field of indexing. According to the specificimplementation scheme, the method comprises the steps: acquiring key values in key value pairs to be inquired, wherein the key values of the key value pairs in the KV system are progressively increased integer numbers; taking the key value as a serial number of a fixed-length type index, and determining address information of a storage position where a numerical value in the to-be-queried key value pair is located according to the serial number; and reading a numerical value in the to-be-queried key value pair from a storage space according to the address information. According to the method,the obtained key values are used as the serial number of the fixed-length type index, so that the resource occupation amount of a system memory is reduced; by determining the address information of the storage position where the numerical value is located according to the serial number, the numerical value reading is completed, the numerical value reading speed is increased, and the numerical value reading efficiency is improved.

The invention provides a dynamic memory, a manufacturing method, a read-write method, an electronic device and a memory circuit, a transistor is arranged in each memory cell in the dynamic memory, a main grid electrode and a back grid electrode are arranged in the transistor, and the back grid electrode is electrically connected with a drain electrode. A first specific voltage is applied to the main grid electrode through the word line during writing operation, and then an electric signal is applied to the source electrode through the bit line according to external input data; when reading operation is carried out, a second specific voltage is applied to the back gate through the word line by utilizing the influence of the voltage on the back gate on the threshold voltage of the transistor (the size of the second specific voltage is between the threshold voltage when the transistor stores' 1 'and the threshold voltage when the transistor stores' 0 '); and then the data reading is realized by detecting the magnitude of the output current of the field effect transistor. Therefore, reading and writing of data can be realized only by arranging one transistor, the structure of the storage unit is simplified, and the integration level and the storage density of the dynamic memory can be improved.

The invention provides a pixel circuit and a driving method thereof, a panel and a manufacturing method thereof, a drawing board and a display device. The pixel circuit comprises a control switch module, a driving module, a signal writing module, a storage capacitor and a light emitting device. The control switch module is connected with the signal writing module in parallel and is connected withthe driving module, the storage capacitor and the data signal end; the control switch module comprises a metal layer and a flexible conductive layer which are insulated from each other. The metal layer is used for receiving data voltage of the data signal end, and the flexible conductive layer is used for generating deformation under the action of external force so as to conduct the metal layer and the storage capacitor upper pole plate, so that the data voltage of the data signal end is input into the driving module. When in use, the flexible conductive layer is used for generating deformation under the action of external force so as to conduct the metal layer and the upper polar plate of the storage capacitor, so that the data voltage of the data signal end is input into the driving module. When the paintbrush presses the screen, writing of electric signals can be achieved, and therefore the function of the electronic canvas is achieved.

A disk apparatus and video / audio data processor having a function of processing stream data, virtually having a function of processing commands in a digital VCR, and adaptable to respond to various processing requests from an external apparatus, wherein a video / audio frame boundary of video / audio data is detected, the video / audio data continuously received from outside is divided into video / audio frame units according to the detected video / audio frame boundary, and the divided data is stored on a disk medium and controlled. A video / audio control method comprising detecting a video / audio frame boundary of video / audio data, dividing the video / audio data continuously received from outside into video / audio frame units according to the detected video / audio frame boundary, and controlling the divided data.

The invention discloses an NFC label data writing method and a terminal. The method comprises the following steps of acquiring a UID of each to-be-produced NFC according to a received label data writing request of a plurality of to-be-produced NFC, generating a ciphertext calculation instruction comprising a plurality of UIDs according to the UIDs, and sending the ciphertext calculation instruction to a background server, receiving calculation completion information which is sent by the background server and corresponds to the ciphertext calculation instruction, and obtaining a ciphertext corresponding to the UID according to the calculation completion information, and writing the ciphertext into the secret key area of the to-be-produced NFC based on the UID according to the received sealing test starting information of the plurality of to-be-produced NFC, and obtaining the to-be-produced NFC after the ciphertext is written, thereby realizing batch writing of NFC label data, not needing to formulate issuing equipment according to the packaging form and interval of the NFC, shortening the writing period of the NFC label data. Therefore, the writing efficiency of the NFC label data is simply and effectively improved.

The invention discloses a commodity anti-counterfeiting traceability method and system based on a blockchain and an NFC chip, and relates to the field of information encryption storage. The method comprises: encrypting header information of a blockchain data block through an encryption algorithm, and generating a public key; storing a public key generated by encryption in the NFC chip; reading a public key stored in the NFC chip when writing or querying the blockchain data; and decrypting the header information of the blockchain data block by using the read public key, so as to write the commodity information in the blockchain or query the commodity information written before. Through the interaction mode of combining the blockchain and the NFC chip, the safety of data information is ensured while the convenience of data is ensured.

The invention discloses an optical storage method and system based on fused quartz fluorescence signals. The optical storage method comprises the following steps: S1, dividing data needing to be stored into two parts; S2, focusing the first light beam to a processing area of the fused quartz, obtaining a hole with a corresponding size in the fused quartz by controlling the light intensity and theaction time of the first light beam, realizing writing of first part data, and generating a fluorescence signal in the processing area; and S3, focusing the second light beam to the same processing area of the fused quartz, regulating and controlling the intensity of the fluorescence signal, and realizing the writing of the second part of data, thereby finishing the storage of the data. The optical scattering signals and the fluorescence signals of the processing structure are adopted to store data respectively, the storage dimension of optical storage is expanded, more data can be stored on fused quartz with the same size, the storage capacity is greatly improved, and the storage density is high.

The embodiment of the invention provides a code writing method and device, an electronic device and a computer readable storage medium. The method comprises the following steps: obtaining informationinput by a user, based on the obtained information input by a user, searching first code information matched with the information input by the user, determining target first code information when a selection operation of the user for the searched first code information is detected, and inserting the target first code information or second code information containing the target first code information into a corresponding position to realize code writing. According to the embodiment of the invention, on one hand, the time and labor cost consumed by manual code writing are reduced, and on the other hand, the possibility limit of previously written codes by copying and pasting programmers is reduced, so that the time consumed by copying and pasting is reduced, the complexity of copying and pasting is reduced, and the user experience is improved.

The invention belongs to an information storage device and an information storage method based on a BiFeO3 and Au thin film hetero-structure and belongs to the technical field of information storage. The information storage device is composed of the BiFeO3 and Au thin film hetero-structure, C-AFM, a DC voltage source, a He-Ne laser generator, SNOM, an incidence optical fiber, a photomultiplier and a computer, wherein the BiFeO3 and the Au thin film hetero-structure is a storage medium which is composed of a BiFeO3 epitaxial thin film having uniaxial anisotropy and a metal material Au film layer. In the invention, by means of an NTEGRA platform, an electric-conductive tip atomic force microscope detection technology and a near-field optical microscope tip detection technology are integrated so that the advantages of information writing of ferroelectric storage and information reading of optical storage are combined, thereby achieving electric writing and optical reading. The information storage device and the information storage method are high in information writing speed, is low in energy consumption, is long in information storage time, is high in reading speed, is nonvolatile and is convenient and quick to read.

The invention discloses an optical storage method and system for introducing a fluorescence signal into an anisotropic structure and belongs to the field of optical storage. The method comprises the following steps: taking data to be stored as target data, determining a delay value L, an optical axis direction D and fluorescence signal intensity I corresponding to the target data, and determininga position P of an anisotropic structure in a processing material according to a storage address of the target data; respectively setting the intensity and polarization state of the first laser according to the delay value L and the optical axis direction D, and writing an anisotropic structure at the position P in the processing material by utilizing the first laser; determining the writing process of the anisotropic structure; exciting material defects introduced by the first laser to generate fluorescence signal intensity Iini; after the intensity and action time of the second laser are setaccording to the difference value between the fluorescence signal intensity I and the fluorescence signal intensity Iini, enabling the second laser to act on the position P in the machined material,so that the intensity of the fluorescence signal is regulated and controlled to be I by utilizing the heat effect of the second laser. The optical storage capacity can be improved.

The invention relates to a method and device for writing data into a database, computer equipment and a storage medium. The method comprises the following steps: acquiring a data hierarchical relationship, and generating analog image data of at least one detection object according to the data hierarchical relationship, writing the analog image data of the at least one detection object into a structured file according to the data hierarchical relationship; and reading analog image data in the structured file, and writing the analog image data in the structured file into a corresponding file ofa database according to the data hierarchical relationship. By adopting the method, system memory occupation can be reduced, and the data writing speed into the database is increased.

The invention discloses a 3D thin film transistor nanocrystalline memory component and its manufacturing method, the memory component includes: a thin film transistor formed in the substrate; a nanocrystalline layer in the thin film transistor gate dielectric layer; the other thin film transistor formed in the thin film transistor; these two thin film transistors share one character line. This invention provides a production method of lower memory components manufacturing temperature, and when stacking in the vertical direction, each memory components can not have different memory components characteristics in each layers by the different thermal budget of each layer, and when the 3D memory of the invention stacks memory components of each layer, no need to additional solve the on-line problem of each layer's memory components extending outward to the substrate transistors, that is to say, it provides an active memory components to stack vertically the memory components, and furthermore, the invention can enhance 3D memory bit density and simplify the manufacturing complexity.

The invention discloses an implementation system and method for allocating addresses to slave devices through RS-485 buses, and belongs to the technical field of RS-485 bus control, a plurality of slave devices form an array with M rows and N columns, buses A in the RS-485 buses of N slave devices in each row are mutually connected, buses B in the RS-485 buses of the N slave devices in each row are mutually connected, and buses B in the RS-485 buses of the N slave devices in each row are mutually connected. The slave machines in each row are connected with the bus A of the RS-485 bus of the host through a pair of open points of one relay, the bus B of the RS-485 buses of the M slave machines in each column are connected with one another, and the slave machines in each column are connected with the bus B of the RS-485 bus of the host through a pair of open points of one relay. In the invention, the address can be written into the slave only by closing the relays of the row and the column where the slave needing to write the address is located, so that the sequential address writing of each slave is realized, the address writing of the multiple slave devices can be conveniently realized, the operation is simple, the efficiency is high, the working intensity can be reduced, the cost is relatively low, and the practicability is high. The method is suitable for all systems with RS-485 buses.

Embodiments of the present invention provide a method for creating a RAID based on SMR, which relates to the technical field of data storage. The SMR-based RAID creation method is applied to a preset RAID drive, and the creation method includes: determining multiple SMRs for creating a RAID; configuring the SMR areas of the multiple SMRs as the first array of the target RAID to be created ; wherein, the first array includes a plurality of strips, and each strip includes a write area with the same offset address in the SMR area of ​​the plurality of SMRs, and is used to store the write in the way of aligning the order of writing. data file; configure the CMR areas of the multiple SMRs as the second array of the target RAID. Compared with the prior art, by applying the above-mentioned creation method provided by the embodiments of the present application, it is possible to create a RAID using SMR without using other hard disks as a cache.

The present application relates to the technical field of solid-state hard disk control, in particular to a method and device for writing data into a solid-state hard disk, and a computer-readable storage medium, which are used to improve the utilization rate of flash, reduce write amplification and increase service life. The above-mentioned data writing method includes: creating a TLB node resource pool and a head node resource pool in the DDR cache; the TLB node resource pool includes a plurality of TLB node resources, and the head node resource pool includes at least one head node resource, and the number of head node resources is equal to The number of TLBPAGEs; after obtaining the data to be written in any TLB PAGE, apply for TLB node resources for the data to be written from the TLB node resource pool, and write the data to be written into the corresponding TLB node resources; and, from scratch In the node resource pool, apply for the head node resource for any TLB PAGE, and write the address information of the TLB node resource storing the data to be written into the head node resource; when the solid state disk is powered off, the TLB node resource pool and the head node resource pool Write the storage content of each node resource in the flash.

The invention provides a document variable chapter online writing method and a readable storage medium. The method comprises the following steps: acquiring all parsed chapters from a database according to a document ID; extracting variable chapters and sections from all the parsed chapters and sections; loading a document control, and displaying the variable chapter content; and compiling the displayed variable chapter content. According to the method, a specific chapter name can be quickly positioned according to the chapter number, and each chapter corresponds to a unique chapter identifier, so that repetition is avoided, the incidence relation between the chapters is clearer and better readability is achieved; and by processing the variable chapters, the traditional habit of compiling according to the whole document is broken, the document is compiled according to the chapters, and the operation effect of adding, deleting and modifying each chapter is achieved.

The invention discloses a data caching method and electronic equipment. The data caching method comprises the following steps: establishing an annular linked list based on N memory blocks, wherein N is an integer greater than or equal to 2, the storage capacity of N memory blocks contained in the annular linked list is greater than the storage capacity of other memory blocks in the electronic equipment; and executing data writing and / or data reading processing based on the annular linked list, at least comprising one of the following processing modes: during data writing, if the memory block corresponding to the annular linked list is fully written, selecting an idle memory block from an idle list as a newly added memory block in the annular linked list, and writing data in the newly added memory block, and when data are read, taking out a first memory block from the at least one fully-written memory block corresponding to the annular linked list, and reading data from the first memory block. Therefore, the dynamic expansion of the annular linked list is realized, the frequency of releasing the memory blocks is reduced, and the performance of data caching is improved.