Dynamic memory, manufacturing method and read-write method thereof, electronic equipment and memory circuit

Abstract

The invention provides a dynamic memory, a manufacturing method, a read-write method, an electronic device and a memory circuit, a transistor is arranged in each memory cell in the dynamic memory, a main grid electrode and a back grid electrode are arranged in the transistor, and the back grid electrode is electrically connected with a drain electrode. A first specific voltage is applied to the main grid electrode through the word line during writing operation, and then an electric signal is applied to the source electrode through the bit line according to external input data; when reading operation is carried out, a second specific voltage is applied to the back gate through the word line by utilizing the influence of the voltage on the back gate on the threshold voltage of the transistor (the size of the second specific voltage is between the threshold voltage when the transistor stores' 1 'and the threshold voltage when the transistor stores' 0 '); and then the data reading is realized by detecting the magnitude of the output current of the field effect transistor. Therefore, reading and writing of data can be realized only by arranging one transistor, the structure of the storage unit is simplified, and the integration level and the storage density of the dynamic memory can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor devices, and in particular, the present application relates to a dynamic memory and its fabrication, reading and writing methods, electronic equipment, and storage circuits. Background technique [0002] Dynamic Random Access Memory (DRAM) is a kind of semiconductor memory. Compared with static memory, DRAM memory has the advantages of simpler structure, lower manufacturing cost and higher capacity density. With the development of technology, The application of DRAM memory is increasingly widespread. [0003] However, the existing DRAM memory has the disadvantages of relatively complex structure and low integration, which limits the application of the DRAM memory. SUMMARY OF THE INVENTION [0004] Aiming at the shortcomings of the existing methods, the present application proposes a dynamic memory and its production, reading and writing method, electronic equipment, and storage ...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the shortcomings of the existing methods, the present application proposes a dynamic memory and its manufacturing, reading and writing methods, electronic equipment, and storage circuits to solve the problems of complex structure and low integration in DRAM memory in the prior art

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