Information storage device based on BiFeO3 and Au thin film hetero-structure

Abstract

The invention belongs to an information storage device and an information storage method based on a BiFeO3 and Au thin film hetero-structure and belongs to the technical field of information storage. The information storage device is composed of the BiFeO3 and Au thin film hetero-structure, C-AFM, a DC voltage source, a He-Ne laser generator, SNOM, an incidence optical fiber, a photomultiplier and a computer, wherein the BiFeO3 and the Au thin film hetero-structure is a storage medium which is composed of a BiFeO3 epitaxial thin film having uniaxial anisotropy and a metal material Au film layer. In the invention, by means of an NTEGRA platform, an electric-conductive tip atomic force microscope detection technology and a near-field optical microscope tip detection technology are integrated so that the advantages of information writing of ferroelectric storage and information reading of optical storage are combined, thereby achieving electric writing and optical reading. The information storage device and the information storage method are high in information writing speed, is low in energy consumption, is long in information storage time, is high in reading speed, is nonvolatile and is convenient and quick to read.

Description

technical field [0001] The invention belongs to the technical field of information storage, in particular to a BiFeO-based 3 An information storage device with an Au thin film heterostructure and an information storage method based on the information storage device. Background technique [0002] As one of the three major resources of human society, information has a ubiquitous impact on people's production and life. In the 2007 International Semiconductor Device Development Roadmap (ITRSD), a new chapter was opened, named "New Storage Devices and Materials", It is emphasized that it is of great significance to design and develop a new generation of storage devices based on new information storage mechanisms. It is a long-term research goal in the field of information technology in the future to realize storage devices with large information capacity, long information storage time, low energy consumption for information reading and writing, convenient and fast information ac...

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Problems solved by technology

[0010] The purpose of the present invention is to solve the problems of slow information "writing" speed and high energy consumption of current magnetic storage or optical storage technology, and the information "reading" process of ferroelectric storage technology has damage to the electric polarization state, and the storage medium has a low service life and other issues, using BiFeO 3 room temperature ferroelectricity, optical anisotropy and electro-optic effect, and produced BiFeO-based 3 The information storage device with a heterogeneous structure of Au thin film combines the advantages of "writing" information based on conductive needle tip technology to write information into ferroelectric thin film and the "reading" advantage of optically stored information using near-field optical detection technology to realize " Electronic writing, optical reading"

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